Method for adjusting operating frequency of memory, apparatus for adjusting operating frequency of memory, smart terminal, and storage medium
By dynamically adjusting the operating frequency of memory based on operation mode determined from memory read/write data, the method addresses the inefficiency in existing memory systems, maximizing performance and resource utilization.
Patent Information
- Application Number
- JP2022574566
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-07-08
- Publication Date
- 2025-06-03
- Estimated Expiration
- 2041-07-08
AI Technical Summary
In existing memory systems, the performance of higher-frequency memory dies is not fully utilized due to operations being performed at the frequency of the lower-frequency die, leading to poor memory utilization efficiency and resource wastage.
A method for dynamically adjusting the operating frequency of memory based on the operation mode determined by the memory read/write data obtained from the smart terminal's operation information, allowing each memory die to operate at its optimal frequency.
This approach maximizes the performance of memory dies and improves memory resource utilization by ensuring that memory operations are performed at the optimal frequency based on real-time operational demands.
Smart Images

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Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of memory control, and particularly relates to a method for adjusting the operating frequency of a memory, a smart terminal, and a storage medium.
Background Art
[0002] With the development of current embedded devices, the requirements for the device hardware of the embedded system are increasing. Currently, many chips integrate memory dies inside the chip from the perspectives of performance, cost, and power consumption. However, due to the requirements for capacity and performance, in actual use, combinations of memory dies with different frequencies are used.
Summary of the Invention
Problems to be Solved by the Invention
[0003] In the prior art, during the operation of the terminal system, the memory is read and written at a frequency corresponding to the memory die with a lower frequency. Therefore, the performance of the memory die with a higher frequency is not fully exerted, the utilization efficiency of the memory is poor, and memory resources are wasted. Therefore, there is room for improvement and development in the prior art.
Means for Solving the Problems
[0004] Embodiments of the present invention provide a method for adjusting the operating frequency of a memory, a smart terminal, and a storage medium, aiming to solve the problem in the prior art that the utilization efficiency of the memory is poor and memory resources are wasted.
[0005] In a first aspect, embodiments of the present invention include a step of determining memory read and write data of the terminal system based on the operation information of the smart terminal, where the operation information is for reflecting information generated during the operation of the terminal system, and the memory read and write data is for reflecting the read and write speed of the memory of the terminal system. A step of determining an operation mode of the memory based on the memory read / write data; A step of adjusting an operation frequency of the memory based on the operation mode, and providing a method for adjusting the operation frequency of the memory including the steps.
[0006] In one embodiment, the step of determining memory read / write speed data of the terminal system based on operation information of the smart terminal includes: A step of obtaining operation information of the smart terminal; A step of obtaining a system task during operation of the terminal system based on the operation information, where the system task includes any one or more of an application, a service process, or a system function; A step of determining memory read / write speed data of the terminal system based on the system task, including the steps.
[0007] In one embodiment, the step of determining memory read / write speed data of the terminal system based on the system task includes: A step of obtaining read / write peak speed data corresponding to startup of the terminal system of the system task based on the system task, where the read / write peak speed data is for reflecting the highest read / write speed of the system task for its own memory at startup of the terminal system; A step of obtaining instantaneous read / write speed data of the system task for the memory when the terminal system executes the system task; A step of determining the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data, including the steps.
[0008] In one embodiment, the step of obtaining read / write peak speed data corresponding to startup of the terminal system of the system task based on the system task is: Obtaining a preset memory read / write data table for storing read / write peak speed data corresponding to the application, read / write peak speed data corresponding to the service process, read / write peak speed data corresponding to the system function, and read / write peak speed data corresponding to the terminal system; Including steps of respectively obtaining read / write peak speed data corresponding to the system task and the terminal system based on the memory read / write data table.
[0009] In one embodiment, the step of respectively obtaining read / write peak speed data corresponding to the system task and the terminal system based on the memory read / write data table Includes steps of matching the system task with the memory read / write data table and matching the terminal system with the memory read / write data table; And steps of respectively obtaining read / write peak speed data corresponding to the application, the service process or the system function in the system task and read / write peak speed data corresponding to the terminal system.
[0010] In one embodiment, the step of determining the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data Includes adding the read / write peak speed data and the instantaneous read / write speed data to obtain the memory read / write data.
[0011] In one embodiment, the step of determining the operation mode of the memory based on the memory read / write data Includes obtaining preset same frequency band peak speed data for reflecting the instantaneous read / write speed of different type numbers of memory dies in the memory at the same frequency; When the memory read / write data is greater than the same frequency band peak speed data, a step of setting the operation mode of the memory to a different frequency operation mode; When the memory read / write data is less than the same frequency band peak speed data, a step of setting the operation mode of the memory to the same frequency operation mode, and includes.
[0012] In one embodiment, the step of adjusting the operating frequency of the memory based on the operation mode is When the operation mode of the memory is the same frequency operation mode, obtain the frequencies corresponding to all memory dies of the memory, determine the lowest frequency from the frequencies corresponding to all memory dies, and set the lowest frequency as the operating frequency of all memory dies of the memory; When the operation mode of the memory is the different frequency operation mode, a step of controlling the frequencies corresponding to all memory dies of the memory as the operating frequencies respectively, and includes.
[0013] In a second aspect, an embodiment of the present invention includes a memory and one or more programs. The one or more programs are stored in the memory and configured to be executed by one or more processors to execute the method for adjusting the operating frequency of the memory according to any one of the above items, and provides a smart terminal.
[0014] In a third aspect, an embodiment of the present invention provides a non-transitory computer-readable storage medium capable of executing the method for adjusting the operating frequency of the memory according to any one of the above items when the instructions in the storage medium are executed by a processor of an electronic device.
Effect of the Invention
[0015] In this embodiment, first, based on the operation information of the smart terminal, the memory read / write data of the terminal system is determined. Since the operation information reflects the information generated during the operation of the terminal system, based on the operation information, the read / write speed of the memory during the operation of the terminal system can be determined, that is, the memory read / write data can be obtained. Then, based on the memory read / write data, the operation mode of the memory is determined, and finally, based on the operation mode of the memory, the operating frequency of the memory is adjusted. Although the operation mode in this embodiment is determined based on the read / write data of the memory, the read / write data of the memory is obtained based on the operation information of the smart terminal. Thus, the operation mode in this embodiment is determined based on the operation information generated during the actual operation of the terminal system. By adjusting the operating frequency of the memory based on the operation mode in this way, the operating frequency of the memory can be adjusted based on the operation information, achieving the effect of dynamically adjusting the operating frequency of the memory, exerting the maximum performance of the memory, and improving the utilization efficiency of the memory.
Brief Description of the Drawings
[0016] Hereinafter, with reference to the drawings, the specific embodiments of the present invention will be described in detail to clarify the technical means of the present invention and its beneficial effects.
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Embodiments for Carrying Out the Invention
[0017] In order to make the object, technical means and advantages of the present invention clearer and more definite, the present invention will be described in detail below with reference to the drawings and by way of examples. It should be understood that the specific examples described here are for the purpose of explaining the present invention and not for limiting the present invention.
[0018] In addition, in the embodiments of the present invention, when using directional indications (such as up, down, left, right, front, back...), it is only for explaining the relative positional relationship and movement status between each component in a specific posture (as shown in the figure). When the specific posture changes, the directional indication also changes accordingly.
[0019] As can be seen from the researchers' findings, with the development of current embedded devices, the requirements for the device hardware of embedded systems are increasing ever more. Currently, many chips have memory dies integrated within them from the perspectives of performance, cost, and power consumption. However, due to requirements for capacity and performance, in actual use, combinations of memory dies with different frequencies are being used. For example, the maximum capacity of a memory die with the model number DDR3 is 512M, but during actual use, it is possible to select an external memory die with the model number DDR4 or a memory die of another model number. It may even be a combination of an internal memory die with the model number DDR3-2133 and an external memory die with the model number DDR4-2666, thus resulting in combinations of memory dies with different frequencies. In the prior art, during the operation of the terminal system, memory read and write operations are performed at the frequency corresponding to the memory die with the lower frequency. As a result, the performance of the memory die with the higher frequency is not fully utilized, the memory utilization efficiency is poor, and memory resources are wasted. For example, when there is a combination of a memory die with the model number DDR3-2133 and an external memory die with the model number DDR4-2666, the terminal system performs read and write operations on all memory dies at the frequency corresponding to the memory die with the model number DDR3-2133. Therefore, the memory die with the model number DDR4-2666 cannot exert its maximum performance, leading to a waste of resources.
[0020] To solve the problems in the prior art, this embodiment provides a method for adjusting the operating frequency of a memory. By means of the method for adjusting the operating frequency of the memory in this embodiment, the maximum performance of the memory can be exerted and the utilization efficiency of the memory can be improved. Specifically, this embodiment first determines the memory read / write data of the terminal system based on the operating information of the smart terminal. Since the operating information reflects the information generated during the operation of the terminal system, based on the operating information, the read / write speed of the memory during the operation of the terminal system can be determined, that is, the memory read / write data can be obtained. Then, based on the memory read / write data, the operating mode of the memory is determined, and finally, based on the operating mode of the memory, the operating frequency of the memory is adjusted. Although the operating mode in this embodiment is determined based on the memory read / write data, the memory read / write data is obtained based on the operating information of the smart terminal. Thus, the operating mode in this embodiment is determined based on the operating information generated during the actual operation of the terminal system. By adjusting the operating frequency of the memory based on the operating mode in this way, the operating frequency of the memory can be adjusted based on the operating information, achieving the effect of dynamically adjusting the operating frequency of the memory. Compared with the prior art in which the terminal system performs memory read / write at a frequency corresponding to a memory die with a low frequency, this embodiment can exert the maximum performance of the memory and improve the utilization efficiency of the memory.
[0021] For example, while the smart terminal is operating, operation information of the smart terminal is obtained. Then, based on the operation information, the read / write speed of the memory of the terminal system is obtained, that is, the memory read / write data of the terminal system is obtained. Then, based on the memory read / write data, for example, the operation mode of the memory such as the synchronous frequency operation mode or the asynchronous frequency operation mode is determined. Finally, based on the operation mode, the operation frequency of the memory is adjusted. For example, when the memory is a combination of a memory die with a model number of DDR3-2133 and an external memory die with a model number of DDR4-2666, in this embodiment, the memory read / write data can be obtained based on the operation information. Then, the operation mode is determined, and based on the operation mode, the operation frequencies of the memory die with a model number of DDR3-2133 and the external memory die with a model number of DDR4-2666 are adjusted, so as to exert the maximum performance of the memory die with a model number of DDR3-2133 and the external memory die with a model number of DDR4-2666, and improve the resource utilization rate.
[0022] Exemplary method:
[0023] In this embodiment, a method for adjusting the operation frequency of a memory applied to a smart terminal is provided. As shown in FIG. 1, the method includes steps S100 to S300.
[0024] Step S100: A step of determining the memory read / write data of the terminal system based on the operation information of the smart terminal, where the operation information is for reflecting the information generated during the operation of the terminal system, and the memory read / write data is for reflecting the read / write speed of the memory of the terminal system.
[0025] When specifically implemented, since the smart terminal generates operation information during operation, this operation information can reflect the information generated during the operation of the smart terminal and when executing system tasks. These operation information may be the memory storage data occupied by the smart terminal during operation. Or when the smart terminal operates a certain application, it is the name information of the application, the read / write data of the application to the memory, the operation log data of the application, etc. Therefore, based on the operation information, it is possible to determine what the system task currently being executed by the smart terminal is. For example, when analyzing the operation information, in order to obtain that the chat log data of WeChat continues to increase, based on these chat log data, it can be determined that the system task currently being executed on the smart terminal is to operate WeChat. When the smart terminal executes a system task, it reads and writes to the memory. Therefore, in this embodiment, the terminal system can obtain the memory read / write data when executing the system task. Since the memory read / write data is the data when reading and writing to the memory of the terminal system, the memory read / write data can reflect the read / write speed of the terminal system to the memory. For example, when the smart terminal starts a certain application, it generates operation information related to the startup of the application. The operation information includes the memory read / write data of the terminal system when the application starts and during the subsequent operation of the application. Therefore, the memory read / write data can be obtained based on the operation information.
[0026] In one embodiment, as shown in FIG. 2, this embodiment includes steps S101 to S103 when obtaining the memory read / write data.
[0027] Step S101: Obtain the operation information of the smart terminal.
[0028] Step S102: Based on the operation information, obtain the system tasks during the operation of the terminal system, where the system tasks include any one or more of applications, service processes, or system functions.
[0029] Step S103: Determine the memory read / write speed data of the terminal system based on the system tasks.
[0030] When specifically implemented, since the memory read / write data of the terminal system is associated with the operation information of the smart terminal, in this embodiment, it is first necessary to obtain the operation information of the smart terminal. Then, based on the operation information, obtain the system tasks being executed by the smart terminal. Since the smart terminal reads and writes to the memory when executing the system tasks, in this embodiment, the memory read / write speed data of the terminal system can be obtained based on the system tasks. In one embodiment, the system tasks include any one or more of applications, service processes, or system functions, that is, the system tasks currently being executed by the smart terminal may be not only one but also multiple. For example, a smart terminal (such as a mobile phone) is running WeChat and NetEase Cloud Music, that is, the user is chatting with friends using WeChat while listening to songs using NetEase Cloud Music. Also, the smart terminal is further running a GPS positioning service in the background to obtain the location information of the smart terminal in real time. As can be seen, the system tasks being executed by the smart terminal include at least the WeChat application, NetEase Cloud Music, and the GPS positioning service. When the smart terminal executes these system tasks, the terminal system needs to read and write to the memory to store data.
[0031] Since the memory read / write data of the terminal system includes multi-dimensional data, in this embodiment, it is necessary to accurately obtain the memory read / write data in order to more accurately determine the operating mode of the memory based on the memory read / write data in subsequent steps. Specifically, the terminal system may perform read / write operations on its own memory during execution, and the system task may perform read / write operations on its own memory after startup. For example, like when saving data, WeChat itself performs read / write operations on the memory during execution. Also, when the terminal system executes a system task, the system task may perform read / write operations on the memory. For example, WeChat may activate the camera function during execution, and the camera function may perform read / write operations on the memory. As can be seen from this, the memory read / write data in this embodiment includes the data that the terminal system itself performs read / write operations on the memory when starting up, the data that the system task itself performs read / write operations on the memory when starting up, and the data that the system task performs read / write operations on the memory when the terminal system executes the system task.
[0032] In one embodiment, this example is for improving the resource utilization rate of a memory by adjusting the operating frequency of the memory. Regarding the operating frequency of the memory, it is generally measured based on the read / write speed for the memory. Generally, the faster the read / write speed for the memory, the higher the corresponding required operating frequency. Therefore, in order to adjust the operating frequency more accurately, in this example, when acquiring memory read data, what is acquired is the read speed for the memory. Specifically, in this example, after determining the system task, first, based on the system task, at the startup of the system task and the terminal system, the read / write peak speed data corresponding to itself is acquired. Then, when the terminal system executes the system task, the instantaneous read / write speed data for the memory of the system task is acquired. Finally, based on the read / write peak speed data and the instantaneous read / write speed data, the memory read / write data is determined. That is, the memory read / write data includes the read / write peak speed data at the startup of the terminal system, the read / write peak speed data at the startup of the system task, and the instantaneous read / write speed data during the execution of the system task.
[0033] When specifically applied, in this embodiment, when acquiring the corresponding read / write peak speed data during the startup of the system task and the terminal system, mainly the preset memory read / write data table is acquired. The memory read / write data table is pre-created based on the read / write data for the memories of the system task and the terminal system. Therefore, the memory data table stores the read / write peak speed data corresponding to the system task and the read / write peak speed data corresponding to the terminal system. That is, based on the memory data table, the highest read / write data for the memory of each system task and the highest read / write data for the memory of the terminal system can be obtained and determined. Since the system task includes any one or more of an application, a service process, or a system function, therefore, the memory read / write data table stores the read / write peak speed data corresponding to the application, the read / write peak speed data corresponding to the service process, the read / write peak speed data corresponding to the system function, and the read / write peak speed data corresponding to the terminal system. Based on this memory read / write data table, the read / write peak speed data corresponding to the terminal system of the system task can be rapidly determined. In one embodiment, the memory read / write data table is preset and can be called at any time. When setting the memory read / write data table, as shown in FIG. 6, in this embodiment, the CPU controls the memory controller in the memory control module to read out the read / write peak speed for the memory of the terminal system (i.e., the obtained read / write peak speed data corresponding to the terminal system) and the highest read / write speed for the memory during the startup of each application, service process, and system mechanism (i.e., the obtained read / write peak speed data corresponding to the system), and record them to form the memory read / write data table. Specifically, it is as shown in Table 1 below. Table 1 includes the system task (i.e., any one or more of an application, a service process, or a system function) and the read / write peak speed data corresponding to the terminal system.
[0034]
Table 1
[0035] Therefore, when the smart terminal acquires the system tasks being executed, the system tasks can be matched with the memory read / write data table, and the terminal system can be matched with the memory read / write data table. In this embodiment, the data processing module queries the memory read data table (i.e., the above Table 1) based on the system tasks to determine the read / write peak speed data corresponding to the system tasks (i.e., applications, service processes, or system functions), and further acquires the read / write peak speed data corresponding to itself when the terminal system starts up from the memory read data table (i.e., the above Table 1). For example, when the system tasks being executed on the smart terminal are the WeChat application, NetEase Cloud Music, and GPS positioning service, based on the above Table 1, the read / write peak speed data corresponding to the WeChat application is 12 MB / s, the read / write peak speed data corresponding to NetEase Cloud Music is 5 MB / s, the read / write peak speed data corresponding to the GPS positioning service is 42 MB / s, and it can be obtained that the read / write peak speed data corresponding to the terminal system is 4520 MB / s.
[0036] After obtaining the read / write peak speed data corresponding to the terminal system and system tasks, in this embodiment, when the terminal system executes a system task, the terminal system further obtains the instantaneous read / write speed data for the memory of the system task. Specifically, as shown in FIG. 6, the CPU in this embodiment can read the instantaneous read / write speed data generated during the operation of the system task by the memory controller of the memory control module. However, since the instantaneous read / write speed for the memory during the operation of the system task may vary depending on the speed of the bandwidth, in this embodiment, the instantaneous read / write speed data is obtained by a real-time collection method. For example, when WeChat activates the camera function, the camera function may read and write to the memory, and at this time, the instantaneous read / write speed data for the memory can be obtained, and this instantaneous read / write speed data is the instantaneous read / write speed for the memory during the operation of the system task.
[0037] After obtaining the read / write peak speed data and the instantaneous read / write speed data, in this embodiment, the read / write peak speed data and the instantaneous read / write speed data are added together to obtain the memory read / write data. For example, if the read / write peak speed data corresponding to the terminal system is S1, the read / write peak speed data corresponding to the system task is S2, and the instantaneous read / write speed data during the operation of the system task is S3, then the memory read / write data is S = S1 + S2 + S3.
[0038] Step S200: Determine the operation mode of the memory based on the memory read / write data.
[0039] When specifically implemented, in this embodiment, after obtaining the memory read / write data, the memory read / write data can be analyzed, and the operation mode of the memory can be determined based on the memory read / write data. The operation mode of the memory represents at what frequency the memory is operating as the operating frequency. The operation mode of the memory includes the same-frequency operation mode and the different-frequency operation mode. The same-frequency operation mode is a mode in which all memory dies in the memory have the same frequency as the operating frequency. The different-frequency operation mode is a mode in which each memory die has its corresponding frequency as the operating frequency. In this embodiment, the reason for determining the operation mode of the memory is to adjust the operating frequency of the memory based on the operation mode, exert the maximum performance of the memory, and improve the utilization rate of resources. Regarding the operation mode of the memory, it includes the same-frequency operation mode and the different-frequency operation mode.
[0040] In one embodiment, as shown in FIG. 3, in this embodiment, step S200 includes steps 201 to step S203.
[0041] Step S201: Obtain preset same-frequency band peak speed data for reflecting the instantaneous read / write speed of different model number memory dies in the memory at the same frequency.
[0042] Step S202: When the memory read / write data is greater than the same-frequency band peak speed data, set the operation mode of the memory to the different-frequency operation mode.
[0043] Step S203: When the memory read / write data is less than the same-frequency band peak speed data, set the operation mode of the memory to the same-frequency operation mode.
[0044] When specifically implemented, in this embodiment, after determining the memory read / write data, the memory read / write data is compared with the peak speed data in the same frequency band, and based on the comparison result, the operation mode of the memory is determined. In one embodiment, the peak speed data in the same frequency band is pre-set and can be called at any time. The peak speed data in the same frequency band is for reflecting the instantaneous read / write speed of different model number memory dies in the memory at the same frequency. The peak speed data in the same frequency band in this embodiment is data for determining whether to use the same frequency operation mode as the operation mode of the memory or a different frequency operation mode as the operation mode of the memory. Specifically, in this embodiment, the CPU schedules in advance the startup and termination of all applications, service processes, etc., and reads the bandwidth data of the memory by controlling the memory controller. Since there may be multiple memory dies in the memory, the memory controller is controlled to obtain the instantaneous read / write speeds of different memory dies at the startup and termination of applications, service processes, etc., and then these memory dies are set to the same frequency operation mode to obtain the peak bandwidth speed of the memory in the same frequency operation mode, that is, the peak speed data in the same frequency band can be obtained. When the memory read / write data is greater than the peak speed data in the same frequency band, it indicates that the demand for the memory resources of the applications and service processes operating on the smart terminal is large at that time. However, if the same frequency operation mode is adopted, the terminal system reads and writes the memory at the frequency corresponding to the memory die with a lower frequency, and most of the memory dies higher than the lowest frequency cannot exert their maximum performance, resulting in a waste of memory resources. To solve this problem, in this embodiment, when the memory read / write data is greater than the peak speed data in the same frequency band, the operation mode of the memory is set to a different frequency operation mode, so that the memory dies of the memory can operate at different operating frequencies to exert the maximum performance.When the memory read / write data is smaller than the same frequency band peak speed data, it indicates that the demand for the memory resources of the applications and service processes running on the smart terminal is not large at that time, and the operation mode of the memory is set to the same frequency operation mode, that is, all the memory dies of the memory are operated at the same operating frequency.
[0045] For example, when the memory read / write data is 5532M / s and the preset same frequency band peak speed data is 4509M / s, it indicates that the memory read / write data is larger than the same frequency band peak speed data, and the operation mode of the memory is set to the different frequency operation mode. When the memory read / write data is 4032M / s, it indicates that the memory read / write data is smaller than the same frequency band peak speed data, and the operation mode of the memory is set to the same frequency operation mode.
[0046] Step S300: Based on the operation mode, adjust the operating frequency of the memory.
[0047] Although the operation mode in this embodiment is determined based on the memory read / write data, the memory read / write data is determined based on the operation information generated during the actual operation of the terminal system. Therefore, in this embodiment, by adjusting the operating frequency of the memory based on the operation mode, the operating frequency of the memory can be adjusted based on the operation information, achieving the effect of dynamically adjusting the operating frequency of the memory, exerting the maximum performance of the memory, and improving the utilization efficiency of the memory.
[0048] In one embodiment, as shown in FIG. 4, step S300 includes steps S301 to S302.
[0049] Step S301: When the operation mode of the memory is the same frequency operation mode, obtain the frequencies corresponding to all the memory dies of the memory, determine the lowest frequency from the frequencies corresponding to all the memory dies, and use the lowest frequency as the operating frequency of all the memory dies of the memory.
[0050] Step S302: When the operation mode of the memory is the different-frequency operation mode, all memory dies of the memory use the corresponding frequencies as the operation frequencies respectively.
[0051] Specifically, when implementing, in this embodiment, the same-frequency operation mode controls the terminal system to read and write the memory at the frequency corresponding to the memory die with the lower frequency. The different-frequency operation mode is a mode in which all memory dies in the memory operate at different operation frequencies. Therefore, when the operation mode of the memory in this embodiment is the same-frequency operation mode, the frequencies corresponding to all memory dies of the memory are obtained. The lowest frequency is determined from the frequencies corresponding to all memory dies, and the lowest frequency is used as the operation frequency of all memory dies of the memory, so as to ensure that the operation frequencies of all memory dies of the memory are the same and the operation frequency is the lowest frequency of all memory dies. When the operation mode of the memory is the different-frequency operation mode, by using the corresponding frequencies as the operation frequencies for all memory dies of the memory, the maximum performance can be exerted for each memory die, and the memory resources can be fully utilized.
[0052] For example, as shown in FIG. 6, in the memory of this embodiment, there are a memory die with the model number DDR3-2133 and a memory die with the model number DDR4-2666, and the frequency corresponding to the memory die with the model number DDR3-2133 is lower than the frequency corresponding to the memory die with the model number DDR4-2666. When the operation mode of the memory is the same-frequency operation mode, the two types of memory dies are operated with the frequency corresponding to the memory die with the model number DDR3-2133 as the operation frequency. When the operation mode of the memory is the different-frequency operation mode, the memory die with the model number DDR3-2133 and the memory die with the model number DDR4-2666 are operated with the corresponding frequencies as the operation frequencies respectively.
[0053] As described above, in this embodiment, first, based on the operation information of the smart terminal, the memory read / write data of the terminal system is determined. Since the operation information reflects the information generated during the operation of the terminal system, based on the operation information, the read / write speed of the memory during the operation of the terminal system can be determined, that is, the memory read / write data can be obtained. Then, based on the memory read / write data, the operation mode of the memory is determined, and finally, based on the operation mode of the memory, the operation frequency of the memory is adjusted. Although the operation mode in this embodiment is determined based on the memory read / write data, the memory read / write data is obtained based on the operation information of the smart terminal. Thus, the operation mode in this embodiment is determined based on the operation information generated during the actual operation of the terminal system. Therefore, by adjusting the operation frequency of the memory based on the operation mode, the operation frequency of the memory can be adjusted based on the operation information, achieving the effect of dynamically adjusting the operation frequency of the memory, exerting the maximum performance of the memory, and improving the utilization efficiency of the memory.
[0054] Exemplary apparatus:
[0055] As shown in FIG. 6, an embodiment of the present invention provides an apparatus for adjusting the operation frequency of a memory, including a data acquisition unit 10, a mode determination unit 20, and a frequency adjustment unit 30. Specifically, the data acquisition unit 10 is a data acquisition unit 10 for determining the memory read / write data of the terminal system based on the operation information of the smart terminal. The operation information is for reflecting the information generated during the operation of the terminal system, and the memory read / write data is for reflecting the read / write speed of the memory of the terminal system. The mode determination unit 20 is for determining the operation mode of the memory based on the memory read / write data. The frequency adjustment unit 30 is for adjusting the operation frequency of the memory based on the operation mode.
[0056] Based on the above embodiments, the present invention further provides a smart terminal whose block diagram is as shown in FIG. 7. The smart terminal includes a processor, a memory, a network interface, a display, and a temperature sensor connected by a system bus. The processor of the smart terminal is for providing computing and control capabilities. The memory of the smart terminal includes a non-volatile storage medium and an internal memory. The operating system and computer program are stored in the non-volatile storage medium. The internal memory provides an environment for the execution of the operating system and computer program in the non-volatile storage medium. The network interface of the smart terminal is for connecting and communicating with an external terminal via a network. When the computer program is executed by the processor, a method for adjusting the operating frequency of the memory is realized. The display of the smart terminal may be a liquid crystal display or an electronic paper display, and the temperature sensor of the smart terminal is provided inside the smart terminal in advance for detecting the operating temperature of internal devices.
[0057] Those skilled in the art should understand that the block diagram shown in FIG. 7 is only a block diagram of a part of the structure related to the technical means of the present invention, and does not limit the smart terminal to which the technical means of the present invention is applied. The specific smart terminal may include more or fewer components than the illustrated structure, may combine some components, or may have different components.
[0058] In one embodiment, a smart terminal is provided that includes a memory and one or more programs. The one or more programs are stored in the memory and configured to be executed by one or more processors to include instructions for performing the following operations.
[0059] Based on the operation information of the smart terminal, determine the memory read / write data of the terminal system. The operation information is for reflecting the information generated during the operation of the terminal system, and the memory read / write data is for reflecting the read / write speed of the memory of the terminal system.
[0060] Based on the memory read / write data, determine the operation mode of the memory.
[0061] Based on the operation mode, adjust the operating frequency of the memory.
[0062] A person skilled in the art can complete all or part of the flow in the method for realizing the above embodiments by instructing the related hardware through a computer program. The computer program may be stored in a non-volatile computer-readable recording medium, and when the computer program is executed, it can include the flow of the embodiments of the above methods. Any reference to the memory, storage, database or other media used in each embodiment according to the present invention can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. For the purpose of illustration rather than limitation, RAM is available in various forms such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), Rambus direct RAM (RDRAM), direct Rambus dynamic RAM (DRDRAM), and Rambus dynamic RAM (RDRAM).
[0063] As described above, the present invention discloses a method for adjusting the operating frequency of a memory, a smart terminal, and a storage medium. The method includes: determining the memory read / write data of the terminal system based on the operating information of the smart terminal, where the operating information is for reflecting the information generated during the operation of the terminal system, and the memory read / write data is for reflecting the read / write speed of the terminal system with respect to the memory; determining the operating mode of the memory based on the memory read / write data; and adjusting the operating frequency of the memory based on the operating mode. The present invention can achieve the maximum performance of the memory and improve the utilization rate of the memory by acquiring the memory read data of the terminal system based on the operating information of the smart terminal, then determining the operating mode of the memory based on the memory read data, and finally adjusting the operating frequency of the memory based on the operating mode.
[0064] It should be noted that the application examples of the present invention are not limited to the above examples. Those skilled in the art can make modifications or changes based on the above description, and it should be understood that all of these modifications and changes should fall within the protection scope of the appended claims of the present invention.
Claims
1. A step of determining memory read / write data of a terminal system based on operation information of a smart terminal, wherein the operation information is for reflecting information generated during operation of the terminal system, and the memory read / write data is for reflecting the read / write speed with respect to the memory of the terminal system; A step of determining an operation mode of the memory based on the memory read / write data; A step of adjusting an operation frequency of the memory based on the operation mode, and including: The step of determining the memory read / write speed data of the terminal system based on the operation information of the smart terminal includes: A step of obtaining the operation information of the smart terminal; A step of obtaining system tasks during operation of the terminal system based on the operation information, wherein the system tasks include any one or more of an application, a service process, or a system function; A step of determining the memory read / write speed data of the terminal system based on the system tasks, and is a method for adjusting the operation frequency of the memory.
2. The step of determining the memory read / write speed data of the terminal system based on the system tasks includes: A step of obtaining read / write peak speed data corresponding to startup of the system task and the terminal system based on the system task, wherein the read / write peak speed data is for reflecting the highest read / write speed with respect to its own memory during startup of the system task and the terminal system; A step of obtaining instantaneous read / write speed data of the system task with respect to the memory when the terminal system executes the system task; The method for adjusting the operation frequency of the memory according to Claim 1, including a step of determining the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data.
3. The step of determining the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data includes: The method for adjusting the operation frequency of the memory according to Claim 2, including obtaining the memory read / write data by adding the read / write peak speed data and the instantaneous read / write speed data.
4. Based on the system task, the step of obtaining read / write peak speed data corresponding to the startup of the system task and the terminal system is as follows: Obtaining a preset memory read / write data table that stores read / write peak speed data corresponding to the application, read / write peak speed data corresponding to the service process, read / write peak speed data corresponding to the system function, and read / write peak speed data corresponding to the terminal system; Based on the memory read / write data table, respectively obtaining read / write peak speed data corresponding to the system task and the terminal system, the method for adjusting the operating frequency of the memory according to claim 2, comprising:
5. Based on the memory read / write data table, the step of respectively obtaining read / write peak speed data corresponding to the system task and the terminal system is as follows: Matching the system task with the memory read / write data table, and matching the terminal system with the memory read / write data table; Based on the memory read / write data table, the step of respectively obtaining read / write peak speed data corresponding to the system task and the terminal system is as follows: obtaining read / write peak speed data corresponding to the application, the service process, or the system function in the system task, and read / write peak speed data corresponding to the terminal system, the method for adjusting the operating frequency of the memory according to claim 4, comprising:
6. Based on the read / write peak speed data and the instantaneous read / write speed data, the step of determining the memory read / write data is as follows: Adding the read / write peak speed data and the instantaneous read / write speed data to obtain the memory read / write data, the method for adjusting the operating frequency of the memory according to claim 5, comprising:
7. Before obtaining the memory read / write data table with the operating mode of the memory set, Reading the read / write peak speed of the memory of the terminal system, the read / write peak speed data of each application and each service process in the terminal system, and the read / write peak speed data of the memory when the system function of the terminal system is started; The step of recording the read / write peak speed for the memory of the terminal system, the read / write peak speed data of each application and each service process in the terminal system, and the read / write peak speed data for the memory when the system functions of the terminal system are started, to form the memory read / write data table, is further included in the method for adjusting the operating frequency of the memory according to claim 4.
8. The step of determining the operating mode of the memory based on the memory read / write data is the step of obtaining preset same frequency band peak speed data for reflecting the instantaneous read / write speeds of different model number memory dies in the memory at the same frequency, the step of comparing the memory read / write data with the same frequency band peak speed data, and determining the operating mode of the memory based on the comparison result, in the method for adjusting the operating frequency of the memory according to claim 1.
9. The step of comparing the memory read / write data with the same frequency band peak speed data, and determining the operating mode of the memory based on the comparison result is when the memory read / write data is greater than the same frequency band peak speed data, the step of setting the operating mode of the memory to a different frequency operating mode, when the memory read / write data is less than the same frequency band peak speed data, the step of setting the operating mode of the memory to the same frequency operating mode, in the method for adjusting the operating frequency of the memory according to claim 8.
10. The step of adjusting the operating frequency of the memory based on the operating mode is when the operating mode of the memory is the same frequency operating mode, the step of obtaining the frequencies corresponding to all the memory dies of the memory, determining the lowest frequency from the frequencies corresponding to all the memory dies, and setting the lowest frequency as the operating frequency of all the memory dies of the memory, when the operating mode of the memory is the different frequency operating mode, the step of controlling the frequencies corresponding to all the memory dies of the memory as the operating frequencies respectively, in the method for adjusting the operating frequency of the memory according to claim 9.
11. The memory includes a memory die of the first model number and a memory die of the second model number, and the frequency corresponding to the memory of the first model number is lower than that of the memory die of the second model number. When the operation mode of the memory is the same-frequency operation mode, the step of obtaining the frequencies corresponding to all memory dies of the memory, determining the lowest frequency from the frequencies corresponding to all memory dies, and setting the lowest frequency as the operation frequency of all memory dies of the memory is The method for adjusting the operation frequency of a memory according to claim 10, including operating a memory die of the first type number and a memory die of the second type number with the frequency corresponding to the memory die of the first type number as the operation frequency when the operation mode of the memory is the same-frequency operation mode.
12. When the operation mode of the memory is the different-frequency operation mode, the step of controlling all memory dies of the memory with the frequencies corresponding to them as the operation frequencies is The method for adjusting the operation frequency of a memory according to claim 11, including operating a memory die of the first type number and a memory die of the second type number with the frequencies corresponding to them as the operation frequencies when the operation mode of the memory is the different-frequency operation mode.
13. A data acquisition unit for determining memory read / write data of a terminal system based on operation information of a smart terminal, where the operation information is for reflecting information generated during the operation of the terminal system, and the memory read / write data is for reflecting the read / write speed with respect to the memory of the terminal system, and A mode determination unit for determining the operation mode of the memory based on the memory read / write data, and A frequency adjustment unit for adjusting the operation frequency of the memory based on the operation mode, and The data acquisition unit is A first acquisition subunit for acquiring the operation information of the smart terminal, and A second acquisition subunit for acquiring the system tasks during the operation of the terminal system based on the operation information, where the system tasks include any one or more of an application, a service process, or a system function, and An operation frequency adjustment device for a memory, including a determination subunit for determining the memory read / write speed data of the terminal system based on the system tasks.
14. The determination subunit is A first acquisition module for acquiring read / write peak speed data corresponding to startup of the system task and the terminal system based on the system task, wherein the read / write peak speed data is for reflecting the highest read / write speed with respect to its own memory when the system task and the terminal system are starting up. A second acquisition module for acquiring instantaneous read / write speed data with respect to the memory of the system task when the terminal system executes the system task. A determination module for determining the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data. The operating frequency adjustment device according to claim 13 includes the determination module.
15. The mode determination unit includes An acquisition subunit for acquiring preset same frequency band peak speed data, and A comparison subunit for comparing the memory read / write data with the same frequency band peak speed data and determining the operating mode of the memory based on the comparison result. The operating frequency adjustment device according to claim 13 includes the comparison subunit.
16. The operating mode of the memory includes a same frequency operating mode and a different frequency operating mode. The frequency adjustment unit includes When the operating mode of the memory is the same frequency operating mode, an acquisition subunit for acquiring the frequencies corresponding to all memory dies of the memory, determining the lowest frequency from the frequencies corresponding to all memory dies, and setting the lowest frequency as the operating frequency of all memory dies of the memory. When the operating mode of the memory is the different frequency operating mode, a control subunit for controlling the frequencies corresponding to all memory dies of the memory as their respective operating frequencies. The operating frequency adjustment device according to claim 15 includes the control subunit.
17. A smart terminal including a memory and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by one or more processors to perform the method according to any one of claims 1 to 12.
18. A non-transitory computer-readable storage medium, when instructions in the storage medium are executed by a processor of an electronic device, enables the electronic device to execute the method according to any one of claims 1 to 12.
Citation Information
Patent Citations
Method for controlling operation mode
JP2007287020A
Memory controller and memory system
JP2009163582A
Memory system and method
JP2019053522A
Methods and electronic devices for adjusting the operating frequency of a memory
US20130166832A1