Component recognition device and component mounting machine

Abstract

To accurately determine the formation state of a transfer material layer to an electrode of an electronic component.SOLUTION: A component recognition device 4 for recognizing an electronic component P having an electrode P1 formed with a transfer material layer P2 comprises: a light irradiation unit 41 which irradiates the electronic component P with light; a polarized image acquisition unit 42; and a processing unit 44. The polarized image acquisition unit 42 acquires a plurality of polarized images G1 having different polarization directions by receiving polarized light L3 reflected by the transfer material layer P2 on the electrode P1 according to the incidence of the light L1 radiated from the light irradiation unit 41 in a case where the transfer material layer P2 is formed on the surface of the electrode P1. The processing unit 44 performs processing of determining the formation state of the transfer material layer P2 to the electrode P1 on the basis of the plurality of polarized images G1.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a component recognition device and a component mounting machine for recognizing an electronic component having an electrode on which a transfer material layer is formed.

Background Art

[0002] As a component mounting machine for producing an electronic circuit board by mounting electronic components on a substrate such as a printed wiring board, a configuration including a transfer device that transfers a transfer material such as flux to the electrodes of the electronic components is known. The transfer material is a liquid material having fluidity, and has a function of removing an oxide film and dirt on the electrode surface and a function of improving the wettability of solder with respect to the electrode surface. The transfer device forms a transfer material layer on the electrode by transferring the transfer material to the electrode of the electronic component before being mounted on the substrate.

[0003] When the amount of the transfer material layer formed on the electrode is too small, the effect of improving the wettability of the solder with respect to the electrode surface is not sufficient, and there may be problems such as insufficient solder bonding. On the other hand, when the amount of the transfer material layer formed on the electrode is too large, there may be problems such as excessive spreading of the solder and too narrow a gap between the component body and the substrate. For this reason, a technique for determining whether or not the formation state of the transfer material layer on the electrode is appropriate is required.

[0004] Patent Document 1 discloses a technique for determining whether or not the transfer of the transfer material to the electrode of the electronic component is appropriate. In this technique, a transfer material layer is formed on the electrode using a transfer material containing a fluorescent substance that absorbs ultraviolet light and emits visible light. Then, while irradiating ultraviolet light, the electronic component is imaged, and based on the image information of the transfer material transferred to the electrode, it is determined whether or not the formation state of the transfer material layer is appropriate.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] When using a transfer material containing an additive such as a fluorescent substance as in the technology disclosed in Patent Document 1, the effect of improving the wettability of solder with respect to the electrode surface decreases, and there is a risk that the quality of the electronic circuit board will deteriorate due to the influence of residues derived from the additive.

[0007] An object of the present invention is to accurately determine the formation state of a transfer material layer on an electrode of an electronic component.

Means for Solving the Problems

[0008] A component recognition device according to one aspect of the present invention is a device that recognizes an electronic component having an electrode on which a transfer material layer is formed by transfer of a transfer material. This component recognition device includes a light irradiation unit that irradiates the electronic component with light, and when the transfer material layer is formed on the surface of the electrode, a polarization image acquisition unit that acquires a plurality of polarization images having different polarization directions by receiving the polarization reflected by the transfer material layer in response to the incidence of the light irradiated from the light irradiation unit, and a processing unit that performs a process of determining the formation state of the transfer material layer on the electrode based on the plurality of polarization images and outputs the determination result as a component recognition result.

[0009] According to this component recognition device, the polarization image acquisition unit acquires a plurality of polarization images for an electronic component having an electrode on which a transfer material layer is formed, and the processing unit determines the formation state of the transfer material layer on the electrode based on the plurality of polarization images. At this time, the polarization image acquisition unit receives the polarization reflected by the transfer material layer in response to the incidence of the light irradiated from the light irradiation unit. As a result, the polarization image acquisition unit acquires a plurality of polarization images having different polarization directions.

[0010] When imaging an electronic component having an electrode formed with a transfer material layer using a normal imaging camera, a phenomenon may occur in which it is difficult to identify the presence or absence of, for example, a transparent transfer material layer from the image obtained by the imaging. In contrast, the polarization image acquisition unit can acquire polarization information of the electronic component that is the acquisition target of the image, receives the polarization reflected by the transfer material layer, and acquires a plurality of polarization images with different polarization directions in response to the reception of the polarization. As a result, the plurality of polarization images acquired by the polarization image acquisition unit include image information regarding the transfer material layer based on the reception of the polarization reflected by the transfer material layer. Therefore, the processing unit can accurately determine the formation state of the transfer material layer with respect to the electrode based on the image information regarding the transfer material layer included in the plurality of polarization images.

[0011] In the above component recognition device, the light irradiation unit and the polarization image acquisition unit are arranged in a positional relationship such that the light irradiated from the light irradiation unit enters at least a partial region of the transfer material layer at an incident angle of Brewster's angle, and the polarization of the S wave reflected by the transfer material layer in response to the incidence of the light can be received by the polarization image acquisition unit.

[0012] When the light irradiated from the light irradiation unit enters the transfer material layer, the reflectance of the polarization of the P wave reflected by the transfer material layer decreases as the incident angle of the light approaches Brewster's angle. At this time, when light enters the transfer material layer at an incident angle of Brewster's angle, only the polarization of the S wave is reflected by the transfer material layer. Considering such a phenomenon, the positional relationship between the light irradiation unit and the polarization image acquisition unit is set. Specifically, the light irradiation unit and the polarization image acquisition unit are arranged in a positional relationship such that the light irradiated from the light irradiation unit enters at least a partial region of the transfer material layer at an incident angle of Brewster's angle, and the polarization of the S wave reflected by the transfer material layer in response to the incidence of the light can be received by the polarization image acquisition unit. Due to such a positional relationship between the light irradiation unit and the polarization image acquisition unit, the plurality of polarization images acquired by the polarization image acquisition unit surely include image information regarding the transfer material layer based on the reception of the polarization of the S wave reflected by the transfer material layer. Thereby, the processing unit can more accurately determine the formation state of the transfer material layer with respect to the electrode based on the image information regarding the transfer material layer included in the plurality of polarization images.

[0013] In the above-described component recognition device, the processing unit calculates a linear polarization degree for each pixel based on the plurality of polarization images, and performs an image generation process of generating a linear polarization degree image composed of a pixel group having a luminance value corresponding to the linear polarization degree, and a determination process of determining a formation state of the transfer material layer with respect to the electrode based on the linear polarization degree image.

[0014] In this aspect, the processing unit performs an image generation process and a determination process. In the image generation process, the processing unit calculates a linear polarization degree for each pixel based on the plurality of polarization images, and generates a linear polarization degree image composed of a pixel group having a luminance value corresponding to the linear polarization degree. The linear polarization degree image composed of a pixel group having a luminance value corresponding to the linear polarization degree includes image information regarding the transfer material layer based on the luminance value of each pixel. Therefore, in the determination process, the processing unit can accurately determine the formation state of the transfer material layer with respect to the electrode based on the luminance value of each pixel of the pixel group constituting the linear polarization degree image.

[0015] In the above-described component recognition device, in the determination process, the processing unit extracts a target pixel having a luminance value equal to or higher than a predetermined luminance threshold from the pixel group constituting the linear polarization degree image, calculates a target pixel group area indicating the area of the group of the target pixels, and determines the formation state of the transfer material layer with respect to the electrode based on the target pixel group area.

[0016] In this aspect, in the determination process, the processing unit extracts a target pixel having a luminance value equal to or higher than a predetermined luminance threshold from the pixel group constituting the linear polarization degree image. The target pixel in the linear polarization degree image is a pixel including image information regarding the transfer material layer having a luminance value equal to or higher than a predetermined luminance threshold. Therefore, the processing unit can accurately determine the formation state of the transfer material layer with respect to the electrode based on the target pixel group area indicating the area of the group of the target pixels in the linear polarization degree image.

[0017] In the above-described component recognition device, the processing unit performs area setting processing for setting, in the linearly polarized light image, an electrode region corresponding to the electrode and an outer region adjacent to the outside of the electrode region. In this case, in the determination processing, the processing unit determines that the formation state of the transfer material layer with respect to the electrode is appropriate when the target pixel exists in the electrode region and the area of the target pixel group corresponding to the target pixel in the electrode region, which is an area of interest in the electrode region, is equal to or greater than a predetermined area tolerance value, and the target pixel does not exist in the outer region.

[0018] In this aspect, the processing unit performs area setting processing for setting an electrode region and an outer region in the linearly polarized light image, and performs determination processing after the area setting processing. It becomes possible to recognize the formation position of the transfer material layer with respect to the electrode based on whether or not target pixels exist in each of the electrode region corresponding to the electrode of the electronic component set in the linearly polarized light image and the outer region outside the electrode region. Specifically, when there are target pixels having a luminance value equal to or higher than a predetermined luminance threshold value in the electrode region in the linearly polarized light image, it can be recognized that the transfer material layer is formed at an appropriate position with respect to the electrode. On the other hand, when there are target pixels having a luminance value equal to or higher than a predetermined luminance threshold value in the outer region outside the electrode region in the linearly polarized light image, it can be recognized that the transfer material layer is formed so as to protrude excessively outward from the electrode, and the transfer material layer is formed at an inappropriate position with respect to the electrode.

[0019] Also, when there are target pixels in the electrode region in the linearly polarized light image, it becomes possible to recognize the formation amount of the transfer material layer formed on the electrode based on whether or not the area of interest in the electrode region, which indicates the area of the target pixel group corresponding to the target pixel in the electrode region, is equal to or greater than a predetermined area tolerance value. Specifically, when the area of interest in the electrode region of the target pixel in the electrode region in the linearly polarized light image is equal to or greater than a predetermined area tolerance value, it can be recognized that the formation amount of the transfer material layer is within an appropriate range. On the other hand, when the area of interest in the electrode region of the target pixel in the electrode region in the linearly polarized light image is less than a predetermined area tolerance value, it can be recognized that although the transfer material layer is formed at an appropriate position with respect to the electrode, the formation amount of the transfer material layer is below the appropriate range.

[0020] In the determination process, when there is a target pixel in the electrode region and the target area within the electrode region of the target pixel is equal to or greater than a predetermined area tolerance value, and there is no target pixel in the outer region, based on the linearly polarized light image, the processing unit determines that the formation state of the transfer material layer with respect to the electrode is appropriate. Thereby, the processing unit can accurately determine the formation state of the transfer material layer with respect to the electrode.

[0021] In the above component recognition device, when the target pixel exists in the outer region, the processing unit determines the formation state of the transfer material layer with respect to the electrode using the target area within the outer region indicating the target pixel group area corresponding to the target pixel. In this case, when the target area within the electrode region is equal to or greater than the area tolerance value and the target area within the outer region is equal to or less than a predetermined minute area value, the processing unit determines that the formation state of the transfer material layer with respect to the electrode is appropriate.

[0022] In this aspect, when there is a target pixel in the outer region in the linearly polarized light image, the processing unit determines the formation state of the transfer material layer with respect to the electrode using the target area within the outer region indicating the target pixel group area corresponding to the target pixel. Even when there is a target pixel in the outer region in the linearly polarized light image, when the target area within the outer region is equal to or less than a predetermined minute area value, it is highly likely that the target pixel in the outer region is not derived from the transfer material layer but from noise, minute dust, etc. Therefore, when the target area within the electrode region is equal to or greater than the area tolerance value and the target area within the outer region is equal to or less than a predetermined minute area value based on the linearly polarized light image, the processing unit determines that the formation state of the transfer material layer with respect to the electrode is appropriate. Thereby, the processing unit can accurately determine the formation state of the transfer material layer with respect to the electrode.

[0023] The above component recognition device further includes a storage unit that stores the luminance threshold value, the area tolerance value, and the minute area value in association with the component data for each type of electronic component, which is constituted by the data of the parameters regarding the characteristics of the electronic component.

[0024] In this aspect, when performing the determination process of determining the formation state of the transfer material layer with respect to the electrode, the processing unit can refer to the luminance threshold value, area tolerance value, and minute area value associated with the component data stored in the storage unit.

[0025] In the above component recognition device, the parameter has information on the shape of the electrode in the electronic component.

[0026] The formation state of the transfer material layer with respect to the electrode may vary depending on the difference in the shape of the electrode. Therefore, the luminance threshold value, area tolerance value, and minute area value are associated with the component data including the information on the shape of the electrode as data on the parameters related to the characteristics of the electronic component and stored in the storage unit. Thereby, when performing the determination process of determining the formation state of the transfer material layer with respect to the electrode, the processing unit can refer to the luminance threshold value, area tolerance value, and minute area value associated with the component data stored in the storage unit according to the shape of the electrode.

[0027] In the above component recognition device, in the image generation process, the processing unit generates a composite image by combining the plurality of polarization images in addition to the linear polarization image, and in the region setting process, based on the composite image, the electrode region and the outer region in the linear polarization image are set.

[0028] In this aspect, in the image generation process, the processing unit generates a composite image by combining the plurality of polarization images acquired by the polarization image acquisition unit. This composite image includes image information similar to that of an image captured by a normal imaging camera based on the reception of non-polarized light. Therefore, the processing unit can set the electrode region and the outer region in the linear polarization image based on the image information included in the composite image.

[0029] In the above-described component recognition device, the processing unit detects data of component parameters related to the characteristics of the electronic component including electrode parameters related to the characteristics of the electrode based on the composite image, and performs recognition processing to recognize the center position and orientation of the electronic component from the detection result. In this case, in the region setting process, the processing unit sets the electrode region and the outer region in the linear polarization image based on the recognition result of the recognition processing.

[0030] In this aspect, the processing unit performs recognition processing to recognize the center position and orientation of the electronic component based on the composite image. In this case, in the region setting process, the processing unit can set the electrode region and the outer region in the linear polarization image based on the recognition result of the recognition processing.

[0031] In the above-described component recognition device, the light irradiation unit has a shape capable of irradiating light from the side to the entire circumference of the electronic component.

[0032] In this aspect, the light irradiation unit can irradiate light from the side to the entire circumference of the electronic component. In this case, the polarization image acquisition unit receives non-polarized light that has passed through the transfer material layer and is reflected on the entire circumference of the side of the electrode in response to the incidence of the light irradiated from the light irradiation unit, and also receives polarized light reflected by the transfer material layer corresponding to the entire circumference of the side of the electrode. As a result, the plurality of polarization images acquired by the polarization image acquisition unit include not only image information related to the electrode based on the reception of non-polarized light reflected on the entire circumference of the side of the electrode, but also image information related to the transfer material layer based on the reception of polarized light reflected by the transfer material layer corresponding to the entire circumference of the side of the electrode. Therefore, the processing unit can more accurately determine the formation state of the transfer material layer with respect to the electrode based on the image information related to the transfer material layer included in the plurality of polarization images.

[0033] In the above-described component recognition device, in the image generation process, the processing unit generates the linear polarization degree images for each of the two states, namely, the state where the transfer material layer is not formed on the electrode and the state where the transfer material layer is formed on the electrode, based on the plurality of polarization images for each of the two states, and then generates a difference image showing the difference between the respective linear polarization degree images. In this case, in the determination process, the processing unit determines the formation state of the transfer material layer in the state where the transfer material layer is formed on the electrode based on the difference image.

[0034] In this aspect, in the image generation process, the processing unit generates the linear polarization degree images for each of the two states based on the plurality of polarization images for each of the two states before and after the transfer material layer is formed on the electrode, and then generates a difference image showing the difference between the respective linear polarization degree images. In this case, in the determination process, the processing unit determines the formation state of the transfer material layer in the state where the transfer material layer is formed on the electrode based on the difference image. Thereby, the processing unit can accurately determine the formation state of the transfer material layer on the electrode based on the image information regarding the transfer material layer included in the difference image.

[0035] In the above-described component recognition device, the polarization image acquisition unit is constituted by a polarization camera equipped with a polarization-layered image sensor in which polarizers with different polarization directions are laminated on each pixel of the image sensor.

[0036] In this aspect, the polarization image acquisition unit is constituted by a polarization camera equipped with a polarization-layered image sensor. Each pixel constituting the polarization-layered image sensor is provided with a polarizer that functions as an optical filter for passing only light polarized in a specific direction. Below the polarizer, an image sensor for receiving the light that has passed through the polarizer is provided. By constituting the polarization image acquisition unit with a polarization camera, a plurality of polarization images with different polarization directions can be acquired in one imaging of the electronic component. Thereby, the polarization image acquisition unit can shorten the time required to acquire the plurality of polarization images.

[0037] In the above-described component recognition device, the polarized light image acquisition unit is configured by a camera in which a rotatable polarization filter and an imaging element are arranged side by side on the optical axis.

[0038] In this aspect, the polarized light image acquisition unit is configured by a camera in which a rotatable polarization filter and an imaging element are arranged side by side on the optical axis. In this case, in the polarized light image acquisition unit, the polarization filter is rotated at a predetermined rotation angle for each imaging by the imaging element. In this case, a plurality of polarized light images having different polarization directions can be acquired by imaging a plurality of times by the imaging element. As a result, compared with the case where the polarized light image acquisition unit is configured by the above-described polarized light camera, the time required to acquire a plurality of polarized light images becomes longer, but a polarized light image with high resolution can be acquired.

[0039] A component mounter according to another aspect of the present invention includes a head unit that is movably provided while holding an electronic component having electrodes and mounts the electronic component on a substrate at a predetermined component mounting position, and a transfer device that forms a transfer material layer on the electrodes by transferring a transfer material to the electrodes of the electronic component held by the head unit, the above-described component recognition device that recognizes the electronic component held by the head unit, and a head control unit that controls the movement of the head unit based on a component recognition result output from the processing unit of the component recognition device.

[0040] According to this component mounter, the head unit moves while holding an electronic component in which a transfer material layer is formed on the electrodes in the transfer device, and mounts the electronic component on the substrate at a predetermined component mounting position. The movement of this head unit is controlled by the head control unit. The head control unit controls the movement of the head unit based on a component recognition result output from the processing unit of the component recognition device. Thereby, the mounting accuracy of the components on the substrate can be improved.

[0041] In the above-described component mounting machine, when a determination result indicating that the formation amount of the transfer material layer on the electrode exceeds the appropriate range is output from the processing unit, the head control unit moves the head unit to a predetermined disposal location in order to dispose of the electronic component held by the head unit at the disposal location.

[0042] In this aspect, when a determination result indicating that the formation amount of the transfer material layer on the electrode exceeds the appropriate range is output from the processing unit of the component recognition device, the head unit moves to the disposal location and disposes of the electronic component held by the head unit at the disposal location. Thereby, when the formation amount of the transfer material layer on the electrode exceeds the appropriate range and is too much, and there is a risk of problems such as excessive wetting and spreading of the solder and the gap between the component body and the substrate becoming too narrow, the electronic component can be disposed of at the disposal location. Further, by disposing of the electronic component whose transfer material layer formation amount on the electrode exceeds the appropriate range at a dedicated disposal location, for example, it is possible to prevent the normal component disposal location from being contaminated with the transfer material.

[0043] In the above-described component mounting machine, when a determination result indicating that the formation amount of the transfer material layer on the electrode is below the appropriate range is output from the processing unit, the head control unit moves the head unit to the transfer device in order to re-transfer the transfer material to the electrode of the electronic component held by the head unit.

[0044] In this aspect, when a determination result indicating that the formation amount of the transfer material layer on the electrode is below the appropriate range is output from the processing unit of the component recognition device, the head unit moves to the transfer device and re-transfers the transfer material to the electrode of the electronic component held by the head unit. Thereby, when the formation amount of the transfer material layer on the electrode is below the appropriate range and is too little, or when the transfer material layer is not formed, and there is a risk of problems such as insufficient improvement in the wettability of the solder on the electrode surface and insufficient solder bonding, the transfer material can be re-transferred to the electrode of the electronic component.

[0045] In the above-described component mounting machine, the transfer device includes a storage tank for storing the transfer material, a blade for spreading the transfer material in the storage tank in a film shape, and a film thickness adjustment mechanism for adjusting the film thickness of the transfer material spread in a film shape in the storage tank by adjusting a gap dimension between the blade and the storage tank. And the film thickness adjustment mechanism adjusts the film thickness of the transfer material in the storage tank based on a determination result of a formation state of the transfer material layer with respect to the electrode by the processing unit.

[0046] In this aspect, the film thickness adjustment mechanism of the transfer device adjusts the film thickness of the transfer material spread in a film shape in the storage tank by adjusting the gap dimension between the blade and the storage tank. In this case, the film thickness adjustment mechanism adjusts the film thickness of the transfer material in the storage tank based on a determination result of a formation state of the transfer material layer with respect to the electrode by the processing unit of the component recognition device. Thereby, the formation amount of the transfer material layer formed on the electrode of the electronic component held by the head unit can be adjusted.

Effect of the Invention

[0047] As described above, according to the present invention, the formation state of the transfer material layer with respect to the electrode of the electronic component can be accurately determined.

Brief Description of the Drawings

[0048]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0049] Hereinafter, a component recognition device according to an embodiment of the present invention and a component mounter equipped with the same will be described with reference to the drawings. In the following, with regard to the direction relationship, XY orthogonal coordinates orthogonal to each other on a horizontal plane will be used for explanation.

[0050] The component mounter 1 shown in FIGS. 1 and 2 is a device for mounting (implementing) electronic components on a substrate PP to produce an electronic circuit board. Examples of the electronic components include a plurality of types of components such as chip components provided with electrodes at one end and the other end of the component body, SOP (Small Outline Package), QFP (Quad Flat Package), PLCC (Plastic Leaded Chip Carrier), and BGA (Ball Grid Array). The SOP is a component in which a plurality of electrodes are arranged at one end and the other end in the X-axis direction of the component body. The QFP and PLCC are components in which a plurality of electrodes are arranged at one end and the other end in the X-axis direction of the component body, and a plurality of electrodes are also arranged at one end and the other end in the Y-axis direction of the component body. The BGA is a component provided with a plurality of ball-shaped electrodes on the lower surface of the component body.

[0051] The component mounter 1 includes a mounter main body 2, a control device 3, and a component recognition device 4.

[0052] The mounting machine main body 2 constitutes a structural part that performs component mounting operations and the like for mounting electronic components on the substrate PP during the production of electronic circuit boards. Before the electronic components are mounted by the mounting machine main body 2, a pattern of solder paste is printed on the substrate PP. That is, the mounting machine main body 2 mounts electronic components on the substrate PP on which the solder paste pattern is printed. The mounting machine main body 2 includes a main body frame 21, a substrate transfer device 22, a component supply device 23, a transfer device 24, a head unit 25, and a substrate support device 28.

[0053] The main body frame 21 is a structure in which each part constituting the mounting machine main body 2 is arranged, and is formed in a substantially rectangular shape in a plan view as seen from a direction (vertical direction) orthogonal to both the X-axis direction and the Y-axis direction. The substrate transfer device 22 is constituted by a conveyor and is arranged on the main body frame 21 so as to extend in the X-axis direction. The substrate transfer device 22 transfers the substrate PP in the X-axis direction. The substrate PP transferred by the substrate transfer device 22 is positioned by the substrate support device 28 at a predetermined working position (component mounting position where components are mounted on the substrate PP). The substrate support device 28 positions the substrate PP at the component mounting position by supporting the substrate PP from the lower side.

[0054] The component supply device 23 is arranged in respective region portions at both ends in the Y-axis direction of the main body frame 21. As long as the component supply device 23 is configured to be able to supply electronic components, the component supply method is not particularly limited. As the component supply device 23, for example, a tape feeder that supplies electronic components using a tape as a carrier (carrier), a tray feeder that supplies electronic components by moving a pallet including a tray on which electronic components are placed, a stick feeder that supplies electronic components while extruding the electronic components stored in a cylindrical stick from the stick, and the like can be adopted.

[0055] The head unit 25 is held by the moving frame 27. On the main body frame 21, a fixed rail 261 extending in the Y-axis direction and a ball screw shaft 262 rotationally driven by a Y-axis servo motor 263 are arranged. The moving frame 27 is disposed on the fixed rail 261, and a nut portion 271 provided on the moving frame 27 is screwed onto the ball screw shaft 262. Further, on the moving frame 27, a guide member 272 extending in the X-axis direction and a ball screw shaft 273 driven by an X-axis servo motor 274 are arranged. The head unit 25 is movably held by the guide member 272, and a nut portion provided on the head unit 25 is screwed onto the ball screw shaft 273. Then, when the moving frame 27 moves in the Y-axis direction by the operation of the Y-axis servo motor 263, the head unit 25 moves in the X-axis direction with respect to the moving frame 27 by the operation of the X-axis servo motor 274. That is, the head unit 25 is movable in the Y-axis direction as the moving frame 27 moves, and is movable in the X-axis direction along the moving frame 27. The head unit 25 is movable between the component supply device 23 and the substrate PP supported by the substrate support device 28 via the transfer device 24.

[0056] The head unit 25 includes a plurality of mounting heads 251. Each mounting head 251 has a suction nozzle attached to its tip (lower end). Each mounting head 251 sucks and holds the electronic components supplied by the component supply device 23 with the suction nozzle. The head unit 25 moves to the transfer device 24 while holding the electronic components P (Fig. 3) supplied by the component supply device 23 with each mounting head 251, and then executes a component mounting process of mounting the electronic components P on the substrate PP at a predetermined component mounting position.

[0057] Also, as shown in FIG. 2, the head unit 25 is provided with a first imaging camera 252 and a second imaging camera 253. The first imaging camera 252 and the second imaging camera 253 are cameras equipped with imaging elements such as CMOS (Complementary metal-oxide-semiconductor) or CCD (Charged-coupled device). The first imaging camera 252 images various marks attached to the upper surface of the substrate PP conveyed to the component mounting position by the substrate conveying device 22 from above. By recognizing the marks on the substrate PP by the first imaging camera 252, the amount of displacement of the substrate PP with respect to the origin coordinates is detected. The second imaging camera 253 images the component supply position of the electronic component P in the component supply device 23 obliquely from above. The image obtained by imaging with the second imaging camera 253 is referred to when recognizing the posture of the electronic component P supplied to the component supply position by the component supply device 23.

[0058] The transfer device 24 is a device that forms a transfer material layer P2 (FIG. 5) on the surface of the electrode P1 of the electronic component P held by the mounting head 251 of the head unit 25 by transferring a transfer material to the surface of the electrode P1. The transfer material is a transparent liquid such as a flux having fluidity. The transfer material is roughly classified into two types: rosin-based flux and water-soluble flux. The transfer material has a function of removing the oxide film and dirt on the electrode surface and a function of improving the wettability of solder with respect to the electrode surface.

[0059] As shown in FIG. 2, the transfer device 24 includes a bottomed cylindrical storage tank 241 for storing a transfer material, a blade 242 for spreading the transfer material in the storage tank 241 in a film shape, and a film thickness adjustment mechanism 243. The film thickness adjustment mechanism 243 adjusts the film thickness of the transfer material spread in a film shape in the storage tank 241 by adjusting the gap dimension between the blade 242 and the storage tank 241. Thereby, the formation amount of the transfer material layer P2 formed on the surface of the electrode P1 of the electronic component P held by the mounting head 251 of the head unit 25 can be adjusted. That is, the electronic component P held by the mounting head 251 of the head unit 25 is immersed in the transfer material spread in a film shape in the storage tank 241 with the surface provided with the electrode P1 facing downward and the lower end of the electrode P1 in contact with the bottom surface of the storage tank 241. For this reason, the transfer material layer P2 is formed on the surface of the electrode P1 of the electronic component P up to a height position corresponding to the film thickness of the transfer material in the storage tank 241. For example, in the case of an electronic component P constituted by a BGA, it is regarded as an appropriate formation amount of the transfer material layer P2 that the transfer material layer P2 is formed up to a height position of about 50 to 70% of the electrode height from the lower surface of the component body to the lower end of the ball-shaped electrode P1. The appropriate range of the formation amount of the transfer material layer P2 with respect to the electrode P1 of the electronic component P is set individually for each type of the electronic component P.

[0060] The control device 3 is composed of a CPU (Central Processing Unit), a ROM (Read Only Memory) for storing a control program, a RAM (Random Access Memory) used as a working area of the CPU, and the like. The control device 3 controls the operations of the respective components of the mounting machine main body 2 by the CPU executing the control program stored in the ROM. As shown in FIG. 1, the control device 3 includes, as main functional configurations, a substrate transfer control unit 31, a component supply control unit 32, and a head control unit 33.

[0061] The substrate transfer control unit 31 controls the transfer operation of the substrate PP by the substrate transfer device 22. The component supply control unit 32 controls the supply operation of the electronic component P by the component supply device 23. The head control unit 33 controls the mounting head 251 by controlling the head unit 25 based on the component recognition result by the component recognition device 4. Thus, the head control unit 33 causes the mounting head 251 to execute a component mounting operation of mounting the electronic component P held by the mounting head 251 on the substrate PP corresponding to each of a plurality of target mounting positions set on the substrate PP.

[0062] The component recognition device 4 is a device that recognizes the electronic component P held by the mounting head 251 of the head unit 25. The component recognition device 4 recognizes the electronic component P in a state where the transfer material layer P2 is formed on the electrode P1 by the transfer device 24 before the electronic component P held by the mounting head 251 of the head unit 25 is mounted on the substrate PP. The component recognition device 4 determines the formation state of the transfer material layer P2 with respect to the electrode P1 and recognizes the position and posture of the electronic component P with respect to the mounting head 251 for the electronic component P held by the mounting head 251 of the head unit 25.

[0063] As shown in FIG. 1, the component recognition device 4 includes a light irradiation unit 41, a polarized light image acquisition unit 42, a component image acquisition unit 43, a processing unit 44, and a storage unit 45. The light irradiation unit 41, the polarized light image acquisition unit 42, and the component image acquisition unit 43 are arranged on the main body frame 21 (see FIG. 2). On the other hand, the processing unit 44 and the storage unit 45 may be configured by a microcomputer that is separate and independent from the above control device 3, or may be integrally incorporated into the control device 3.

[0064] The storage unit 45 stores component data DP constituted by data of component parameters PP0 regarding the characteristics of the electronic component P for each type of the electronic component P. The component parameters PP0 include basic parameters PP1 and electrode parameters PP2. The basic parameters PP1 are parameters indicating basic characteristics of the electronic component P, such as the external dimensions of the electronic component P. The electrode parameters PP2 are parameters indicating characteristics regarding the electrode P1 of the electronic component P. The electrode parameters PP2 have information such as the size of the electrode P2, the shape of the electrode P2, and in the case of the electronic component P in which a plurality of electrodes P2 are arranged in a predetermined arrangement direction, the pitch between the electrodes P2.

[0065] Further, the storage unit 45 stores, in association with the component data DP for each type of the electronic component P, a luminance threshold value D1, an area tolerance value D2, and a minute area value D3, which are determination reference values used when the processing unit 44 described later determines the formation state of the transfer material layer P2 with respect to the electrode P1.

[0066] As shown in FIG. 3, the light irradiation unit 41 irradiates the electronic component P held by the mounting head 251 of the head unit 25 with light from the side. The light irradiation unit 41 is provided corresponding to each of the polarization image acquisition unit 42 and the component image acquisition unit 43 (see FIG. 2). The light irradiation unit 41 desirably has a shape capable of irradiating the electronic component P held by the mounting head 251 of the head unit 25 with light from the side over the entire circumference of the electronic component P. Thereby, the light irradiation unit 41 can irradiate the electronic component P with light from the side over the entire circumference. In this case, the light irradiation unit 41 can be constituted by, for example, an annular illumination member having a regular polygon or a circular outer shape in plan view.

[0067] While moving from the transfer device 24 toward the substrate PP conveyed to the component mounting position by the substrate conveyance device 22, the head unit 25 passes above the polarization image acquisition unit 42 and the component image acquisition unit 43 while holding the electronic component P by the mounting head 251.

[0068] The component image acquisition unit 43 is, for example, an imaging camera equipped with an imaging element such as a CMOS or a CCD. While the head unit 25 is moving from the transfer device 24 toward the substrate PP, the component image acquisition unit 43 captures an image of the electronic component P held by the mounting head 251 from below to acquire a component image. The component image acquired by the component image acquisition unit 43 is input to the processing unit 44.

[0069] As shown in FIG. 5, when the light L1 irradiated from the light irradiation unit 41 enters the electrode P1 on which the transfer material layer P2 is formed in the electronic component P, the light L1 that has passed through the transparent transfer material layer P2 and reached the electrode P1 is diffusely reflected by the electrode P1, and the light L1 is specularly reflected on the surface of the transparent transfer material layer P2. As the incident angle α of the light L1 incident on the surface of the transparent transfer material layer P2 approaches the Brewster angle α1, the reflectance of the polarization of the P wave reflected by the transfer material layer P2 decreases. When the light L1 is incident on the transfer material layer P2 at the incident angle α of the Brewster angle α1, only the S-wave polarization is reflected by the transfer material layer P2. That is, the incident angle α of the light L1 when the reflectance of the P wave is almost zero and only the S-wave polarization is reflected is called the Brewster angle α1.

[0070] As shown in FIG. 3, the polarization image acquisition unit 42 is disposed below the electronic component P held by the mounting head 251 of the head unit 25, and receives the non-polarized light L2 diffusely reflected by the electrode P1 in response to the incidence of the light L1 irradiated from the light irradiation unit 41, and also receives the polarized light L3 specularly reflected by the transfer material layer P2. Thereby, as shown in FIG. 6, the polarization image acquisition unit 42 acquires a plurality of polarization images G1 having different polarization directions.

[0071] When an electronic component P having an electrode P1 on which a transfer material layer P2 is formed is imaged using a normal imaging camera that constitutes the component image acquisition unit 43, a phenomenon may occur in which it is difficult to identify the presence or absence of, for example, a transparent transfer material layer P2 from the image acquired by the imaging. In contrast, the polarization image acquisition unit 42 can acquire polarization information of the electronic component P that is the acquisition target of the image, and receives not only the non-polarized light L2 reflected by the electrode P1 but also the polarized light L3 reflected by the transfer material layer P2, and acquires a plurality of polarization images G1 having different polarization directions in response to the reception of the polarized light L3. As a result, the plurality of polarization images G1 acquired by the polarization image acquisition unit 42 include not only image information regarding the electrode P1 based on the reception of the non-polarized light L2 reflected by the electrode P1, but also image information regarding the transfer material layer P2 based on the reception of the polarized light L3 reflected by the transfer material layer P2.

[0072] The light irradiation unit 41 and the polarization image acquisition unit 42 are arranged in a positional relationship such that the light L1 irradiated from the light irradiation unit 41 enters at an incident angle α of the Brewster angle α1 into at least a partial region of the transfer material layer P2, and the polarization image acquisition unit 42 can receive the S-wave polarized light L3 reflected by the transfer material layer P2 in response to the incidence of the light L1. Due to such a positional relationship between the light irradiation unit 41 and the polarization image acquisition unit 42, the plurality of polarization images G1 acquired by the polarization image acquisition unit 42 surely include image information regarding the transfer material layer P2 based on the reception of the S-wave polarized light L3 reflected by the transfer material layer P2.

[0073] Various structures are conceivable for the structure of the polarization image acquisition unit 42 for acquiring a plurality of polarization images G1 having different polarization directions. For example, FIG. 3 shows an example of a polarization image acquisition unit 42 configured by a polarization camera. In this case, the polarization image acquisition unit 42 is configured by a polarization camera equipped with a polarization element stacked image sensor 421 in which polarization elements 4212 having different polarization directions are stacked on each pixel of an image sensor 4211 such as a CMOS or a CCD. Each pixel constituting the polarization element stacked image sensor 421 is provided with a polarization element 4212 that functions as an optical filter that allows only light polarized in a specific direction to pass through. Below the polarization element 4212, an image sensor 4211 that receives the light that has passed through the polarization element 4212 is provided.

[0074] The polarizers 4212 set for each pixel constituting the polarized-light pixel array device 421 are configured such that a plurality of pixels (for example, four pixels) are taken as one unit, and these plurality of pixels (four pixels) each pass only light with a different polarization direction. In the case of the polarized-light pixel array device 421 in which the polarizers 4212 with four pixels as one unit are stacked, the polarization directions of the four pixels a, b, c, and d of the polarized-light pixel array device 421 are set as follows, for example. That is, the polarization direction of pixel a is the 0-degree direction in the horizontal direction. In this case, pixel a receives only polarized light in the 0-degree direction. The polarization direction of pixel b is the 45-degree direction in the upper right diagonal direction. In this case, pixel b receives only polarized light in the 45-degree direction. The polarization direction of pixel c is the 90-degree direction in the vertical direction. In this case, pixel c receives only polarized light in the 90-degree direction. The polarization direction of pixel d is the 135-degree direction in the lower right diagonal direction. In this case, pixel d receives only polarized light in the 135-degree direction.

[0075] In the above description, the horizontal direction, the upper right diagonal direction, the lower right diagonal direction, and the vertical direction are directions with respect to the polarization camera constituting the polarization image acquisition unit 42. The direction perpendicular to the optical axis of the polarization camera is the horizontal direction, and the direction parallel to the optical axis of the polarization camera is the vertical direction. Therefore, the polarization direction of each pixel changes according to the inclination of the polarization camera.

[0076] The polarization image acquisition unit 42 constituted by a polarization camera including the polarized-light pixel array device 421 in which the polarizers 4212 with four pixels as one unit are stacked receives the non-polarized light L2 diffusely reflected by the electrode P1 in response to the incidence of the light L1 irradiated from the light irradiation unit 41, and receives the polarized light L3 specularly reflected by the transfer material layer P2, thereby acquiring polarization images G1 in the polarization directions of 0 degrees, 45 degrees, 90 degrees, and 135 degrees. By configuring the polarization image acquisition unit 42 with a polarization camera, four polarization images G1 with different polarization directions can be acquired by one imaging from the lower side with respect to the electronic component P held by the mounting head 251. Thereby, the polarization image acquisition unit 42 can shorten the time required to acquire a plurality of polarization images G1.

[0077] Further, the polarization image acquisition unit 42 may be a camera having the structure shown in FIG. 4. In the example shown in FIG. 4, the polarization image acquisition unit 42 includes a polarization filter 423 rotatable around an axis 4231 parallel to the optical axis, and an imaging element 422 such as a CMOS or a CCD, which are arranged side by side on the optical axis with a predetermined interval therebetween. In this case, the polarization filter 423 is partitioned into a plurality of regions (for example, four regions) that allow light with different polarization directions to pass through. For example, the polarization filter 423 is partitioned into four regions that allow light with polarization directions of 0 degrees, 45 degrees, 90 degrees, and 135 degrees to pass through. In the polarization image acquisition unit 42 having such a configuration, the polarization filter 423 is rotated at a rotation angle of 45 degrees for each imaging by the imaging element 422. In this case, four polarization images G1 with different polarization directions can be acquired by imaging four times with the imaging element 422. As a result, compared with the case where the polarization image acquisition unit 42 is configured by the above-described polarization camera, the time required to acquire a plurality of polarization images G1 becomes longer, but a polarization image G1 with high resolution can be acquired.

[0078] The component image acquired by the component image acquisition unit 43 and the plurality of polarization images G1 acquired by the polarization image acquisition unit 42 are input to the processing unit 44.

[0079] Based on the plurality of polarization images G1 acquired by the polarization image acquisition unit 42, the processing unit 44 determines the formation state of the transfer material layer P2 with respect to the electrode P1 for the electronic component P held by the mounting head 251 of the head unit 25, and in some cases, recognizes the position and orientation of the electronic component P with respect to the mounting head 251. Further, the processing unit 44 recognizes the position and orientation of the electronic component P with respect to the mounting head 251 based on the component image acquired by the component image acquisition unit 43. Although details will be described later, when the processing unit 44 is configured to recognize the position and orientation of the electronic component P with respect to the mounting head 251 based on the plurality of polarization images G1 acquired by the polarization image acquisition unit 42, the installation of the component image acquisition unit 43 can be omitted.

[0080] The processing unit 44 performs a process of determining the formation state of the transfer material layer P2 with respect to the electrode P1 based on the plurality of polarized images G1 acquired by the polarized image acquisition unit 42, and outputs the determination result as a component recognition result of the electronic component P held by the mounting head 251. As described above, the plurality of polarized images G1 acquired by the polarized image acquisition unit 42 include not only the image information regarding the electrode P1 based on the reception of the non-polarized light L2 reflected by the electrode P1, but also the image information regarding the transfer material layer P2 based on the reception of the polarized light L3 reflected by the transfer material layer P2. Therefore, the processing unit 44 can accurately determine the formation state of the transfer material layer P2 with respect to the electrode P1 based on the image information regarding the transfer material layer P2 included in the plurality of polarized images G1.

[0081] Also, as described above, the light irradiation unit 41 and the polarized image acquisition unit 42 are arranged in a positional relationship such that the light L1 irradiated from the light irradiation unit 41 enters at an incident angle α of the Brewster angle α1 into at least a partial region of the transfer material layer P2, and the polarized image acquisition unit 42 can receive the S-wave polarized light reflected by the transfer material layer P2 in response to the incidence of the light L1. Due to such a positional relationship between the light irradiation unit 41 and the polarized image acquisition unit 42, the plurality of polarized images G1 acquired by the polarized image acquisition unit 42 surely include the image information regarding the transfer material layer P2 based on the reception of the S-wave polarized light L3 reflected by the transfer material layer P2. Thereby, the processing unit 44 can more accurately determine the formation state of the transfer material layer P2 with respect to the electrode P1 based on the image information regarding the transfer material layer P2 included in the plurality of polarized images G1.

[0082] Also, as described above, the light irradiation unit 41 has a shape that enables it to irradiate the electronic component P held by the mounting head 251 with light from the side over the entire circumference. As a result, the light irradiation unit 41 can irradiate the electronic component P with light from the side over the entire circumference. In this case, the polarization image acquisition unit 42 receives the non-polarized light L2 that has passed through the transfer material layer P2 and is reflected on the entire lateral circumference of the electrode P1 in response to the incidence of the light L1 irradiated from the light irradiation unit 41, and also receives the polarized light L3 reflected by the transfer material layer P2 corresponding to the entire lateral circumference of the electrode P1. Thereby, the plurality of polarization images G1 acquired by the polarization image acquisition unit 42 include not only the image information regarding the electrode P1 based on the reception of the non-polarized light L2 reflected on the entire lateral circumference of the electrode P1, but also the image information regarding the transfer material layer P2 based on the reception of the polarized light L3 reflected by the transfer material layer P2 corresponding to the entire lateral circumference of the electrode P1. For this reason, the processing unit 44 can more accurately determine the formation state of the transfer material layer P2 with respect to the electrode P1 based on the image information regarding the transfer material layer P2 included in the plurality of polarization images G1.

[0083] As shown in FIGS. 7 and 8, the processing unit 44 performs an image generation process, a recognition process, a region setting process, and a determination process.

[0084] In the image generation process, the processing unit 44 calculates the degree of linear polarization (DoLP) for each pixel based on the plurality of polarization images G1, and generates a linear polarization degree image G2 composed of a pixel group having a luminance value corresponding to the degree of linear polarization. Hereinafter, for a plurality of polarization images G1 having different polarization directions, the case where the polarization images G1 in the directions of 0 degrees, 45 degrees, 90 degrees, and 135 degrees of the polarization direction are used will be described as an example. The processing unit 44 calculates the incident light intensity I represented by the following formula (1) for each pixel. Incident light intensity I = p0 + p90 + p45 + p135 ···(1)

[0085] In the above formula (1), "p0" represents the luminous intensity of the polarization component with a polarization direction of 0 degrees, "p90" represents the luminous intensity of the polarization component with a polarization direction of 90 degrees, "p45" represents the luminous intensity of the polarization component with a polarization direction of 45 degrees, and "p135" represents the luminous intensity of the polarization component with a polarization direction of 135 degrees.

[0086] Next, the processing unit 44 calculates, for each pixel, the superiority Q of the polarization component of 90 degrees with respect to the polarization component of 0 degrees according to the formula "Q = p0 - p90". Further, the processing unit 44 calculates, for each pixel, the superiority U of the polarization component of 135 degrees with respect to the polarization component of 45 degrees according to the formula "U = p45 - p135".

[0087] Next, the processing unit 44 calculates the linear polarization degree DoLP for each pixel according to the following formula (2). Linear polarization degree DoLP = ((Q 2 + U 2 ) 1 / 2 ) / I ···(2)

[0088] Then, the processing unit 44 calculates, for each pixel, the luminance value corresponding to the linear polarization degree DoLP according to the formula "I × DoLP". In this way, the processing unit 44 generates a linear polarization degree image G2 composed of a pixel group having luminance values corresponding to the linear polarization degrees based on the plurality of polarization images G1.

[0089] Also, in the image generation process, the processing unit 44 generates a composite image G3 by synthesizing the plurality of polarization images G1 in addition to the linear polarization degree image G2. This composite image G3 includes the same image information as an image captured by a normal imaging camera based on the reception of non-polarized light such as the component image acquisition unit 43.

[0090] In the recognition process, the processing unit 44 detects data of the component parameter PP0 regarding the features of the electronic component P including the electrode parameter PP2 regarding the features of the electrode P1 based on the composite image G3, and recognizes the center position and orientation of the electronic component P from the detection result. That is, the processing unit 44 detects the data of the component parameter PP0 included in the component data DP stored in the storage unit 45 (see FIG. 1) based on the composite image G3, and recognizes the center position and orientation of the electronic component P from the detection result. Note that in the recognition process, the processing unit 44 may be configured to detect the data of the component parameter PP0 based on the component image acquired by the component image acquisition unit 43, and recognize the center position and orientation of the electronic component P from the detection result. When the processing unit 44 detects the data of the component parameter PP0 based on the composite image G3 and recognizes the center position and orientation of the electronic component P, the installation of the component image acquisition unit 43 can be omitted.

[0091] In the region setting process, the processing unit 44 sets an electrode region AR1 corresponding to the electrode P1 and an outer region AR2 adjacent to the outside of the electrode region AR1 in the linear polarization degree image G2. Specifically, the processing unit 44 sets the electrode region AR1 and the outer region AR2 in the linear polarization degree image G2 based on the recognition result of the recognition process based on the composite image G3. The processing unit 44 can set the electrode region AR1 and the outer region AR2 in the linear polarization degree image G2 by referring to the data of the component parameter PP0, the center position and orientation of the electronic component P included in the recognition result of the recognition process based on the composite image G3.

[0092] In the determination process, the processing unit 44 determines the formation state of the transfer material layer P2 with respect to the electrode P1 based on the linear polarization degree image G2. The linear polarization degree image G2 composed of a pixel group having a luminance value corresponding to the linear polarization degree includes image information regarding the transfer material layer P2 based on the luminance value of each pixel. Therefore, the processing unit 44 can accurately determine the formation state of the transfer material layer P2 with respect to the electrode P1 based on the luminance value of each pixel of the pixel group constituting the linear polarization degree image G2.

[0093] Specifically, in the determination process, the processing unit 44 reads out from the storage unit 45 a luminance threshold value D1 associated with the component data DP stored in the storage unit 45, and extracts a target pixel having a luminance value equal to or higher than the luminance threshold value D1 from the pixel group constituting the linear polarization image G2. The luminance threshold value D1 is set to, for example, "128", which is half of 256 gradations. Then, the processing unit 44 calculates a target pixel group area indicating the area of the group of target pixels in the linear polarization image G2, and determines the formation state of the transfer material layer P2 with respect to the electrode P1 based on the target pixel group area. The target pixels in the linear polarization image G2 are pixels including image information regarding the transfer material layer P2 and having a luminance value equal to or higher than a predetermined luminance threshold value D1. Therefore, the processing unit 44 can accurately determine the formation state of the transfer material layer P2 with respect to the electrode P1 based on the target pixel group area indicating the area of the group of target pixels in the linear polarization image G2.

[0094] More specifically, the processing unit 44 performs the determination process after the area setting process of setting the electrode area AR1 and the outer area AR2 in the linear polarization image G2. It becomes possible to recognize the formation position of the transfer material layer P2 with respect to the electrode P1 depending on whether there are target pixels in each of the electrode area AR1 corresponding to the electrode P1 of the electronic component P set in the linear polarization image G2 and the outer area AR2 outside thereof. Specifically, when there are target pixels having a luminance value equal to or higher than a predetermined luminance threshold value D1 in the electrode area AR1 in the linear polarization image G2, the processing unit 44 can recognize that the transfer material layer P2 is formed at an appropriate position with respect to the electrode P1. On the other hand, when there are target pixels having a luminance value equal to or higher than a predetermined luminance threshold value D1 in the outer area AR2 outside the electrode area AR1 in the linear polarization image G2, the processing unit 44 can recognize that the transfer material layer P2 is formed so as to protrude excessively outward from the electrode P1 and that the transfer material layer P2 is formed at an inappropriate position with respect to the electrode P1.

[0095] Also, when a target pixel exists in the electrode region AR1 in the linearly polarized light image G2, whether the in-electrode region target area SA1 indicating the target pixel group area corresponding to the target pixel in the electrode region AR1 is equal to or greater than the area tolerance value D2 associated with the component data DP stored in the storage unit 45 makes it possible to recognize the formation amount of the transfer material layer P2 formed on the electrode P1. Note that the area tolerance value D2 is set, for example, to 80% of the appropriate formation area of the transfer material layer P2 with respect to the electrode P1. For example, when the electrode P1 is a spherical electrode with an outer diameter of 0.5 mm, the appropriate formation area of the transfer material layer P2 with respect to the electrode P1 indicates a value of 70% to 90% of the surface area of the spherical electrode P1, which is 0.04 mm 2 results. In this case, the area tolerance value D2 is 0.04 mm 2 and is set to a value of 80% thereof, which is 0.032 mm 2 .

[0096] When the in-electrode region target area SA1 of the target pixel in the electrode region AR1 in the linearly polarized light image G2 is equal to or greater than a predetermined area tolerance value D2, the processing unit 44 can recognize that the formation amount of the transfer material layer P2 is within an appropriate range. On the other hand, when the in-electrode region target area SA1 of the target pixel in the electrode region AR1 in the linearly polarized light image G2 is less than the predetermined area tolerance value D2, the processing unit 44 can recognize that although the transfer material layer P2 is formed at an appropriate position with respect to the electrode P1, the formation amount of the transfer material layer P2 is below the appropriate range.

[0097] In the determination process, the processing unit 44 determines that the formation state of the transfer material layer P2 with respect to the electrode P1 is appropriate when, based on the linearly polarized light image G2, a target pixel exists in the electrode region AR1 and the in-electrode region target area SA1 of the target pixel is equal to or greater than a predetermined area tolerance value D2, and no target pixel exists in the outer region AR2. Thereby, the processing unit 44 can accurately determine the formation state of the transfer material layer P2 with respect to the electrode P1.

[0098] Also, in the determination process, when the processing unit 44 determines that there is a target pixel in the outer region AR2 in the linearly polarized light image G2, it uses the inner-outer-region target area SA2 indicating the target pixel group area corresponding to the target pixel to determine the formation state of the transfer material layer P2 with respect to the electrode P1. Even when there is a target pixel in the outer region AR2 in the linearly polarized light image G2, if the inner-outer-region target area SA2 is equal to or less than the minute area value D3 associated with the component data DP stored in the storage unit 45, the target pixel in the outer region AR2 is likely not derived from the transfer material layer P2 but from noise, minute dust, or the like. Therefore, when the electrode-region inner target area SA1 is equal to or greater than the area tolerance value D2 and the inner-outer-region target area SA2 is equal to or less than a predetermined minute area value D3 based on the linearly polarized light image G2, the processing unit 44 determines that the formation state of the transfer material layer P2 with respect to the electrode P1 is appropriate. Thereby, the processing unit 44 can accurately determine the formation state of the transfer material layer P2 with respect to the electrode P1.

[0099] In addition, when the electrode-region inner target area SA1 is equal to or greater than the area tolerance value D2 and the inner-outer-region target area SA2 exceeds a predetermined minute area value D3, the processing unit 44 determines that the formation amount of the transfer material layer P2 exceeds the appropriate range and is too much, and determines that the formation state of the transfer material layer P2 with respect to the electrode P1 is inappropriate.

[0100] Also, when the electrode-region inner target area SA1 is less than the area tolerance value D2, the processing unit 44 determines that the formation amount of the transfer material layer P2 is less than the appropriate range and is too little, and determines that the formation state of the transfer material layer P2 with respect to the electrode P1 is inappropriate.

[0101] Also, when the electrode-region inner target area SA1 is equal to or less than the minute area value D3, the processing unit 44 determines that the transfer material layer P2 is not formed, and determines that the formation state of the transfer material layer P2 with respect to the electrode P1 is inappropriate.

[0102] Note that the formation state of the transfer material layer P2 with respect to the electrode P1 may vary depending on the difference in the shape of the electrode P1. Therefore, as described above, the processing unit 44 associates the luminance threshold value D1, the area tolerance value D2, and the minute area value D3, which are the criteria used when determining the formation state of the transfer material layer P2 with respect to the electrode P1, with the component data DP that includes the shape information of the electrode P1 as a parameter related to the characteristics of the electronic component P, and stores them in the storage unit 45. Thereby, when performing the determination process for determining the formation state of the transfer material layer P2 with respect to the electrode P1, the processing unit 44 can refer to the luminance threshold value D1, the area tolerance value D2, and the minute area value D3 associated with the component data DP stored in the storage unit 45 according to the shape of the electrode P1.

[0103] The processing unit 44 outputs a component recognition result including the determination result of the formation state of the transfer material layer P2 with respect to the electrode P1 and the recognition result of the position and orientation of the electronic component P with respect to the mounting head 251 to the head control unit 33.

[0104] The head unit 25 moves while holding the electronic component P on which the transfer material layer P2 is formed on the electrode P1 in the transfer device 24, and mounts the electronic component P on the substrate PP at a predetermined component mounting position. The movement of the head unit 25 is controlled by the head control unit 33. The head control unit 33 controls the movement of the head unit 25 based on the component recognition result output from the processing unit 44 of the component recognition device 4 and the component data DP stored in the storage unit 45. Thereby, the mounting accuracy of the electronic component P with respect to the substrate PP can be improved.

[0105] When the processing unit 44 outputs a determination result indicating that the formation amount of the transfer material layer P2 with respect to the electrode P1 exceeds the appropriate range, the head control unit 33 moves the head unit 25 to a predetermined disposal location in order to dispose of the electronic component P held by the head unit 25 at the disposal location. Thereby, when the formation amount of the transfer material layer P2 with respect to the electrode P1 exceeds the appropriate range and is too much, and there is a risk of problems such as excessive wetting and spreading of the solder and the gap between the component body and the substrate PP becoming too narrow, the electronic component P can be disposed of at the disposal location. Also, by disposing of the electronic component P in which the formation amount of the transfer material layer P2 with respect to the electrode P1 exceeds the appropriate range at a dedicated disposal location, for example, it is possible to suppress the normal component disposal location from being contaminated with the transfer material.

[0106] Also, when the processing unit 44 outputs a determination result indicating that the formation amount of the transfer material layer P2 with respect to the electrode P1 is below the appropriate range, the head control unit 33 moves the head unit 25 to the transfer device 24 in order to re-transfer the transfer material to the electrode P1 of the electronic component P held by the head unit 25. Thereby, when the formation amount of the transfer material layer P2 with respect to the electrode P1 is below the appropriate range and is too little, or when the transfer material layer P2 is not formed, and there is a risk of problems such as the wetting effect of the solder on the surface of the electrode P1 not being sufficient and sufficient solder bonding not being obtained, the transfer material can be re-transferred to the electrode P1 of the electronic component P.

[0107] Also, the film thickness adjustment mechanism 243 of the transfer device 24 adjusts the film thickness of the transfer material spread in a film shape in the storage tank 241 by adjusting the gap dimension between the blade 242 and the storage tank 241. In this case, the film thickness adjustment mechanism 243 adjusts the film thickness of the transfer material in the storage tank 241 based on the determination result of the formation state of the transfer material layer P2 with respect to the electrode P1 by the processing unit 44 of the component recognition device 4. Thereby, the formation amount of the transfer material layer P2 formed on the electrode P1 of the electronic component P held by the head unit 25 can be adjusted.

[0108] The component recognition device 4 according to the embodiment of the present invention and the component mounter 1 including the same have been described above. However, the present invention is not limited thereto, and for example, the following modified embodiments can be adopted.

[0109] In the above embodiment, the processing unit 44 of the component recognition device 4 generates the linearly polarized light image G2 based on a plurality of polarized light images G1 corresponding to the electronic component P in which the transfer material layer P2 is formed on the electrode P1, and determines the formation state of the transfer material layer P2 with respect to the electrode P1 based on the linearly polarized light image G2. However, the present invention is not limited to such a configuration.

[0110] In the modified embodiment, in the image generation process, the processing unit 44 generates linearly polarized light intensity images G2 for each of the two states, namely, the state where the transfer material layer P2 is not formed on the electrode P1 and the state where the transfer material layer P2 is formed on the electrode P1, based on a plurality of polarized light images G1 for each of the two states. Then, a difference image indicating the difference between the linearly polarized light intensity images G2 is generated. In this case, in the determination process, the processing unit 44 determines the formation state of the transfer material layer P2 in the state where the transfer material layer P2 is formed on the electrode P1 based on the difference image. Thereby, the processing unit 44 can accurately determine the formation state of the transfer material layer P2 with respect to the electrode P1 based on the image information regarding the transfer material layer P2 included in the difference image.

Explanation of Reference Numerals

[0111] 1 Component mounter 2 Mounter main body 24 Transfer device 25 Head unit 3 Control device 33 Head control unit 4 Component recognition device 41 Light irradiation unit 42 Polarized light image acquisition unit 421 Polarizer stacked image sensor 422 Image sensor 423 Polarizing filter 43 Component image acquisition unit 44 Processing unit 45 Memory unit G1 Polarized image G2 Linear polarization degree image G3 Composite image P Electronic component P1 Electrode P2 Transfer material layer

Claims

1. A component recognition device for recognizing an electronic component having an electrode on which a transfer material layer is formed by transfer of a transfer material, a light irradiation unit that irradiates the electronic component with light, a polarization image acquisition unit that, when the transfer material layer is formed on the surface of the electrode, receives polarized light reflected by the transfer material layer in response to the incidence of light irradiated from the light irradiation unit, thereby acquiring a plurality of polarization images having different polarization directions, a processing unit that performs a process of determining the formation state of the transfer material layer with respect to the electrode based on the plurality of polarization images and outputs the determination result as a component recognition result, wherein the processing unit, performs an image generation process of calculating a linear polarization degree for each pixel based on the plurality of polarization images and generating a linear polarization degree image composed of a pixel group having a luminance value corresponding to the linear polarization degree, and performs a determination process of determining the formation state of the transfer material layer with respect to the electrode based on the linear polarization degree image. A component recognition device.

2. The light irradiation unit and the polarization image acquisition unit are arranged in a positional relationship such that light irradiated from the light irradiation unit enters at a Brewster's angle of incidence into at least a part of the region of the transfer material layer, and the polarization image acquisition unit can receive the S-wave polarization reflected by the transfer material layer in response to the incidence of the light. The component recognition device according to claim 1.

3. In the determination process, the processing unit extracts a target pixel having a luminance value equal to or higher than a predetermined luminance threshold from the pixel group constituting the linear polarization degree image and calculates a target pixel group area indicating the area of the group of the target pixels, and determines the formation state of the transfer material layer with respect to the electrode based on the target pixel group area. The component recognition device according to claim 1 or 2.

4. The processing unit, performs a region setting process of setting an electrode region corresponding to the electrode and an outer region adjacent to the outside of the electrode region in the linear polarization degree image, and in the determination process, when the target pixel exists in the electrode region and the in-electrode region target area indicating the target pixel group area corresponding to the target pixel is equal to or larger than a predetermined area tolerance value and the target pixel does not exist in the outer region, determines that the formation state of the transfer material layer with respect to the electrode is appropriate. The component recognition device according to claim 3.

5. The processing unit, When the target pixel exists within the outer region, the formation state of the transfer material layer with respect to the electrode is determined using the inner-outer region target area that indicates the target pixel group area corresponding to the target pixel. The component recognition device according to claim 4, wherein when the target area within the electrode area is greater than or equal to the area tolerance value and the target area within the outer region is less than or equal to a predetermined minute area value, it is determined that the formation state of the transfer material layer with respect to the electrode is appropriate.

6. The component recognition device according to claim 5, further comprising a storage unit that stores the luminance threshold value, the area tolerance value, and the minute area value in association with the component data for each type of electronic component, which is constituted by data of parameters related to the characteristics of the electronic component.

7. The component recognition device according to claim 6, wherein the parameter has information on the shape of the electrode in the electronic component.

8. The processing unit in the image generation process, in addition to the linearly polarized light image, synthesizes the plurality of polarized light images to generate a synthesized image, and in the region setting process, sets the electrode region and the outer region in the linearly polarized light image based on the synthesized image. The component recognition device according to any one of claims 4 to 7.

9. The processing unit detects data of component parameters related to the characteristics of the electronic component including electrode parameters related to the characteristics of the electrode based on the synthesized image, and performs a recognition process to recognize the center position and orientation of the electronic component from the detection result, and in the region setting process, sets the electrode region and the outer region in the linearly polarized light image based on the recognition result of the recognition process. The component recognition device according to claim 8.

10. The light irradiation unit has a shape capable of irradiating the electronic component with light from the side over the entire circumference. The component recognition device according to any one of claims 1 to 9.

11. The processing unit in the image generation process, based on the plurality of polarized light images for each of the two states: a state where the transfer material layer is not formed on the electrode and a state where the transfer material layer is formed on the electrode, generates the linearly polarized light image for each of the two states, and then generates a difference image showing the difference between each linearly polarized light image, and in the determination process, determines the formation state of the transfer material layer in the state where the transfer material layer is formed on the electrode based on the difference image. The component recognition device according to claim 1.

12. The component recognition device according to any one of claims 1 to 11, wherein the polarized light image acquisition unit is constituted by a polarization camera equipped with a polarized light element laminated polarizer having different polarization directions for each pixel of the imaging device.

13. The component recognition device according to any one of claims 1 to 11, wherein the polarized light image acquisition unit is constituted by a camera in which a rotatable polarization filter and an imaging device are arranged side by side on the optical axis.

14. A head unit that is movably provided while holding an electronic component having electrodes and mounts the electronic component on a substrate at a predetermined component mounting position, A transfer device that forms a transfer material layer on the electrode by transferring a transfer material to the electrode of the electronic component held by the head unit, The component recognition device according to any one of claims 1 to 13, which recognizes the electronic component held by the head unit, A component mounter comprising: a head control unit that controls the movement of the head unit based on a component recognition result output from the processing unit of the component recognition device.

15. When a determination result indicating that the formation amount of the transfer material layer on the electrode exceeds an appropriate range is output from the processing unit, the head control unit moves the head unit to a predetermined disposal location in order to dispose of the electronic component held by the head unit at the disposal location. The component mounter according to claim 14.

16. A head unit that is movably provided while holding an electronic component having electrodes and mounts the electronic component on a substrate at a predetermined component mounting position, A transfer device that forms a transfer material layer on the electrode by transferring a transfer material to the electrode of the electronic component held by the head unit, A component recognition device that recognizes the electronic component held by the head unit and outputs a component recognition result, A head control unit that controls the movement of the head unit based on the component recognition result output from the component recognition device, and The component recognition device includes A light irradiation unit that irradiates light onto the electronic component, A polarized light image acquisition unit that acquires a plurality of polarized light images having different polarization directions by receiving polarized light reflected by the transfer material layer in response to the incidence of light irradiated from the light irradiation unit when the transfer material layer is formed on the surface of the electrode. A processing unit that performs a process of determining a formation state of the transfer material layer with respect to the electrode based on the plurality of polarization images and outputs the determination result as the component recognition result. When a determination result indicating that the formation amount of the transfer material layer with respect to the electrode is below an appropriate range is output from the processing unit as the component recognition result, the head control unit moves the head unit to the transfer device in order to re-transfer the transfer material to the electrode of the electronic component held by the head unit. A component mounter.

17. The transfer device is A storage tank for storing the transfer material, A blade for spreading the transfer material in the storage tank in a film shape, A film thickness adjustment mechanism that adjusts the film thickness of the transfer material spread in a film shape in the storage tank by adjusting a gap dimension between the blade and the storage tank. The film thickness adjustment mechanism adjusts the film thickness of the transfer material in the storage tank based on a determination result of a formation state of the transfer material layer with respect to the electrode by the processing unit. The component mounter according to any one of claims 14 to 16.

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