Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and a substrate processing device, capable of appropriately pressurizing the inside of a chamber from a decompressed state to a normal pressure state.SOLUTION: The present invention relates to a substrate processing method and a substrate processing device. The substrate processing method includes a first decompression step, a first pressurization step, and a first normal pressure step. In the first decompression state, the inside of a chamber 3 is decompressed (state D), and a first gas G1 is supplied to a substrate W in the chamber 3. The first gas G1 contains an organic solvent. The first pressurization step is performed after the first decompression step. In the first pressurization step, a mixed gas K is supplied to the substrate W in the chamber 3, and the inside of the chamber 3 is pressurized from the state D to a normal pressure state J. The mixed gas K contains the organic solvent and an inactive gas. The first normal pressure step is performed after the first pressurization step. In the first normal pressure state, the inside of the chamber 3 is kept in the normal pressure state J, and at least drainage processing or substrate processing is performed.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a plate processing method and a substrate processing apparatus. The substrate is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell.

Background Art

[0002] Patent Document 1 discloses a substrate processing method for processing a substrate housed in a chamber. The substrate processing method includes a first step, a second step, and a drying step. In the first step, a vapor of a hydrophobizing agent is supplied to the substrate in a state where the inside of the chamber is decompressed. In the second step, a vapor of an organic solvent is supplied to the substrate in a state where the inside of the chamber is decompressed. In the drying step, an inert gas is supplied to the substrate in a state where the inside of the chamber is decompressed.

[0003] Here, in the first step and the second step, the substrate is not dried. In the drying step, the substrate is dried.

[0004] In the substrate processing method, an exhaust pump is used to decompress the inside of the chamber. The exhaust pump discharges the gas in the chamber to the outside of the chamber. The exhaust pump operates in the first step, the second step, and the drying step.

[0005] After the drying step, the inside of chamber 3 is pressurized from a decompressed state to an atmospheric pressure state. In order to pressurize the inside of chamber 3 from a decompressed state to an atmospheric pressure state, the following operations A and B are executed. Operation A: Stopping the operation of the exhaust pump. Operation B: Supplying an inert gas into the chamber.

Prior Art Documents

Patent Documents

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-56155 [Summary of the Invention] [Problems to be Solved by the Invention]

[0007] Patent Document 1 does not disclose pressurizing the inside of the chamber from a reduced-pressure state to an atmospheric-pressure state after the first step and before the drying step. Patent Document 1 does not disclose pressurizing the inside of the chamber from a reduced-pressure state to an atmospheric-pressure state after the treatment of the substrate has started and before the substrate is dried.

[0008] The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing method and a substrate processing apparatus capable of appropriately pressurizing the inside of a chamber from a reduced-pressure state to an atmospheric-pressure state. [Means for Solving the Problems]

[0009] As a result of intensive studies to solve the above problems, the present inventors have obtained the following findings. For example, in order to perform a drainage process after the first step and before the second step, it may be preferable that the inside of the chamber is in an atmospheric-pressure state after the first step and before the second step. For example, in order to improve the quality of the substrate processing in the second step, it may be preferable that the inside of the chamber is in an atmospheric-pressure state in the second step. Therefore, the present inventors considered pressurizing the inside of the chamber from a reduced-pressure state to an atmospheric-pressure state after the first step and before the second step. For example, the present inventors considered performing an additional process after the first step and before the second step. The additional process includes the above-described operations A and B.

[0010] However, the inventors have found that the additional process has new problems. The new problem is that in the additional process, the substrate is exposed to an inert gas and dried. The additional process is performed after the first process and before the second process. If the substrate is dried after the first process and before the second process, there is a risk that the substrate will not be properly processed in the second process. There is a risk that it will be difficult to maintain the quality of the substrate processing in the second process. There is a risk that the quality of the substrate processing in the second process will deteriorate.

[0011] Based on these findings, the present invention has been further intensively studied and has the following configuration. That is, the present invention is a substrate processing method for processing a plurality of substrates accommodated in one chamber at once, comprising: a first depressurization step of supplying a first gas containing an organic solvent to the substrate in the chamber in a state where the inside of the chamber is depressurized; a first pressurization step of supplying a mixed gas containing an organic solvent and an inert gas to the substrate in the chamber after the first depressurization step and pressurizing the inside of the chamber from a depressurized state to an atmospheric pressure state; and a first atmospheric pressure step of maintaining the inside of the chamber at the atmospheric pressure state and performing at least one of drainage treatment and substrate processing after the first pressurization step.

[0012] The substrate processing method is to process a plurality of substrates accommodated in one chamber at once. The substrate processing method comprises a first depressurization step, a first pressurization step, and a first atmospheric pressure step. The first depressurization step, the first pressurization step, and the first atmospheric pressure step are executed in this order.

[0013] In the first depressurization step, the inside of the chamber is in a depressurized state. In the first depressurization step, the first gas is supplied to the substrate in the chamber. The first gas contains an organic solvent. The organic solvent of the first gas adheres to the substrate and wets the substrate. Therefore, in the first depressurization step, the substrate is not dried.

[0014] In the first pressurization step, the inside of the chamber is pressurized from a depressurized state to an atmospheric pressure state. In the first pressurization step, a mixed gas is supplied to the substrate in the chamber. The mixed gas contains an organic solvent and an inert gas. The inert gas of the mixed gas rapidly pressurizes the inside of the chamber from a depressurized state to an atmospheric pressure state. The organic solvent of the mixed gas adheres to the substrate and wets the substrate. Therefore, in the first pressurization step, the inside of the chamber rapidly reaches the atmospheric pressure state without drying the substrate. Thus, the substrate is not dried after the first depressurization step and before the first atmospheric pressure step.

[0015] In the first atmospheric pressure step, the inside of the chamber is maintained at the atmospheric pressure state. In the first atmospheric pressure step, at least one of drainage treatment and substrate treatment is performed. When the drainage treatment is performed in the first atmospheric pressure step, it is easy to perform the drainage treatment in the first atmospheric pressure step. This is because the inside of the chamber is maintained at the atmospheric pressure state. More specifically, when the inside of the chamber is at the atmospheric pressure state, the pressure of the gas in the chamber is close to the pressure of the gas outside the chamber. When the substrate treatment is performed in the first atmospheric pressure step, the substrate treatment in the first atmospheric pressure step is performed with appropriate quality. This is because the substrate is not dried after the first depressurization step and before the first atmospheric pressure step.

[0016] As described above, the substrate processing method can appropriately pressurize the inside of the chamber from a depressurized state to an atmospheric pressure state. Specifically, the substrate processing method can rapidly pressurize the inside of the chamber from a depressurized state to an atmospheric pressure state without drying the substrate. Therefore, after the inside of the chamber reaches the atmospheric pressure state, the first atmospheric pressure step is preferably executed.

[0017] In the above-described substrate processing method, it is preferable that the mixed gas contains at least one of the gas of the organic solvent and the liquid of the organic solvent. When the mixed gas contains the gas of the organic solvent, the gas of the organic solvent in the mixed gas condenses on the surface of the substrate and changes to the liquid of the organic solvent on the surface of the substrate. When the mixed gas contains the liquid of the organic solvent, the liquid of the organic solvent in the mixed gas adheres to the surface of the substrate. Whether the mixed gas contains the gas of the organic solvent or the liquid of the organic solvent, the organic solvent derived from the mixed gas preferably wets the substrate. Therefore, the mixed gas preferably prevents the substrate from being dried.

[0018] In the above-described substrate processing method, in the first pressurization step, it is preferable that the mixed gas is generated and the generated mixed gas is supplied into the chamber by the first discharge portion. In the first pressurization step, the inert gas supplied into the chamber is accompanied by an organic solvent. In the first pressurization step, the inert gas supplied into the chamber is not separated from the organic solvent. Therefore, in the first pressurization step, drying of the substrate is more reliably prevented.

[0019] In the above-described substrate processing method, in the first pressurization step, it is further preferable that the substrate is moved up and down or swung in the chamber. In the first pressurization step, the organic solvent derived from the mixed gas adheres more uniformly to the entire substrate.

[0020] In the above-described substrate processing method, before the first depressurization step, it further includes a first immersion step of immersing the substrate in a first liquid stored in a processing tank installed in the chamber, and the first normal pressure step preferably further includes a first liquid discharge step of discharging the first liquid out of the chamber. The first normal pressure step includes the first liquid discharge step. In the first normal pressure step, the inside of the chamber is kept at normal pressure. Therefore, even in the first liquid discharge step, the inside of the chamber is kept at normal pressure. Therefore, in the first liquid discharge step, it is easy to discharge the first liquid in the chamber to the outside of the chamber.

[0021] Note that the first drainage process corresponds to the drainage process in the first normal pressure step. Therefore, it is easy to perform the drainage process in the first normal pressure step.

[0022] In the above-described substrate processing method, in the first drainage step, it is preferable that a drain pipe communicatively connected to either the chamber or the processing tank is opened to the atmosphere outside the chamber, and the first liquid is discharged outside the chamber through the drain pipe. In the first drainage step, the drain pipe is opened to the atmosphere outside the chamber. As described above, in the first drainage step, the inside of the chamber is in a normal pressure state. Therefore, in the first drainage step, it is easy to discharge the first liquid in the chamber to the outside of the chamber through the drain pipe.

[0023] Here, the first liquid in the chamber includes, for example, the first liquid stored in the processing tank. When the drain pipe is communicatively connected to the processing tank, the first liquid stored in the processing tank is discharged outside the chamber through the drain pipe. The first liquid in the chamber includes, for example, the first liquid discharged from the processing tank and accumulated in the chamber. When the drain pipe is communicatively connected to the chamber, the first liquid accumulated in the chamber is discharged outside the chamber through the drain pipe.

[0024] In the above-described substrate processing method, in the first depressurization step, it is preferable that the substrate is pulled up from the first liquid above the processing tank while the inside of the chamber is in a depressurized state. The processing tank stores the first liquid until the substrate is pulled up from the first liquid in the processing tank in the first depressurization step. Here, when the substrate is pulled up from the first liquid in the processing tank in the first depressurization step, the inside of the chamber is already in a depressurized state. The processing tank stores the first liquid until the inside of the chamber becomes a depressurized state. As long as the inside of the chamber is in a depressurized state, it is difficult to discharge the first liquid from the inside of the chamber to the outside of the chamber. However, the first pressurization step is performed after the first depressurization step and before the first drainage step. Therefore, it is easy to perform the first drainage step. Thus, when the processing tank stores the first liquid until the inside of the chamber becomes a depressurized state, the first pressurization step is extremely useful.

[0025] In the above-described substrate processing method, it is preferable to further include a first atmosphere forming step of forming an atmosphere of the first gas in the chamber in a state where the substrate is immersed in the first liquid before the first depressurization step. In the first depressurization step, the substrate is exposed to the atmosphere of the first gas from the time when the substrate is lifted from the first liquid in the processing tank. Therefore, the quality of the substrate processing in the first depressurization step is suitably improved.

[0026] In the above-described substrate processing method, it is preferable that the first normal pressure step further includes a supply step of supplying the processing tank with Second Liquid after the first drainage step. The supply step is executed after the first drainage step. For this reason, after the first liquid in the chamber is discharged outside the chamber, the second liquid is supplied to the processing tank. Therefore, it is easy to supply the second liquid to the processing tank in the supply step. The supply step is included in the first normal pressure step. For this reason, the inside of the chamber is in a normal pressure state in the supply step. Therefore, it is even easier to supply the second liquid to the processing tank in the supply step. As a result, it is easy to store the second liquid in the processing tank in the supply step. By combining the first drainage step and the supply step, it is easy to replace the first liquid with the second liquid in the processing tank.

[0027] In the above-described substrate processing method, it is preferable that the first normal pressure step further includes a second immersion step of immersing the substrate in the second liquid stored in the processing tank. As described above, the substrate is not dried after the first depressurization step and before the first normal pressure step. The first normal pressure step includes the second immersion step. Therefore, in the second immersion step, the substrate is processed with appropriate quality.

[0028] Note that the processing of the second immersion step corresponds to the substrate processing in the first normal pressure step. Therefore, the substrate processing in the first normal pressure step is performed with appropriate quality. As a result, in the first normal pressure step, the drainage treatment and the substrate processing are suitably performed.

[0029] In the above-described substrate processing method, it is preferable that the atmosphere in the chamber contains an organic solvent from the first pressurization step until the substrate is immersed in the second liquid. From the first pressurization step until the substrate is immersed in the second liquid, the organic solvent contained in the atmosphere in the chamber wets the substrate. Therefore, after the first depressurization step and before the second immersion step, the substrate is not dried. Thus, in the second immersion step, the substrate is processed with appropriate quality.

[0030] In the above-described substrate processing method, it is preferable that the mixed gas is further supplied to the substrate in the chamber from the first pressurization step until the substrate is immersed in the second liquid. For this reason, from the first pressurization step until the substrate is immersed in the second liquid in the processing tank, the atmosphere in the chamber preferably contains an organic solvent.

[0031] In the above-described substrate processing method, in the second immersion step, it is preferable that the second liquid is further discharged outside the chamber. The second immersion step is included in the first normal pressure step. For this reason, in the second immersion step, the inside of the chamber is in a normal pressure state. Therefore, in the second immersion step, it is easy to discharge the second liquid in the chamber outside the chamber.

[0032] Note that discharging the second liquid outside the chamber in the second immersion step corresponds to the liquid discharge treatment in the first normal pressure step. Therefore, it is easy to perform the liquid discharge treatment in the first normal pressure step.

[0033] In the above-described substrate processing method, in the second immersion step, it is preferable that the second liquid overflows from the processing tank and the second liquid that has overflowed from the processing tank is discharged outside the chamber. In the second immersion step, it is easy to keep the second liquid in the processing tank clean. Therefore, the quality of the substrate processing in the second immersion step is preferably improved.

[0034] In the above-described substrate processing method, in the second immersion step, it is preferable that a drain pipe communicatively connected to either the chamber or the processing tank is opened to the atmosphere outside the chamber, and the second liquid is discharged outside the chamber through the drain pipe. In the second immersion step, the drain pipe is opened to the atmosphere outside the chamber. As described above, in the second immersion step, the inside of the chamber is in an atmospheric pressure state. Therefore, in the second immersion step, it is easy to discharge the second liquid in the chamber to the outside of the chamber through the drain pipe.

[0035] Here, the second liquid in the chamber includes, for example, the second liquid stored in the processing tank. When the drain pipe is communicatively connected to the processing tank, the second liquid stored in the processing tank is discharged outside the chamber through the drain pipe. The second liquid in the chamber includes, for example, the second liquid discharged from the processing tank and accumulated in the chamber. When the drain pipe is communicatively connected to the chamber, the second liquid accumulated in the chamber is discharged outside the chamber through the drain pipe.

[0036] In the above-described substrate processing method, it is preferable to further include a second depressurization step of immersing the substrate in the second liquid stored in the processing tank installed in the chamber in a state where the inside of the chamber is depressurized after the first atmospheric pressure step. As described above, the substrate is not dried in the first pressurization step. Further, in the first atmospheric pressure step, the inside of the chamber is kept at atmospheric pressure. Therefore, it is difficult to dry the substrate in the first atmospheric pressure step. After the first atmospheric pressure step, the second depressurization step is executed. Therefore, it is difficult to dry the substrate after the first depressurization step and before the second depressurization step. Therefore, in the second depressurization step, it is easy to process the substrate with appropriate quality.

[0037] In the above-described substrate processing method, it is preferable that the atmosphere in the chamber contains an organic solvent from the first pressurization step until the substrate is immersed in the second liquid. The organic solvent contained in the atmosphere in the chamber wets the substrate from the first pressurization step until the substrate is immersed in the second liquid. Therefore, it is difficult to dry the substrate after the first depressurization step and before the second depressurization step. Therefore, in the second depressurization step, the substrate is processed with appropriate quality.

[0038] In the above-described substrate processing method, it is preferable that the mixed gas is further supplied to the substrate in the chamber from the first pressurization step until the substrate is immersed in the second liquid. Therefore, from the first pressurization step until the substrate is immersed in the second liquid in the processing tank, the atmosphere in the chamber preferably contains an organic solvent.

[0039] The present invention provides a substrate processing apparatus including a chamber for accommodating a plurality of substrates, a decompression unit for decompressing the inside of the chamber, a first supply unit for supplying a first gas containing an organic solvent to the substrate in the chamber, a second supply unit for supplying a mixed gas containing an organic solvent and an inert gas to the substrate in the chamber, and a control unit for controlling the decompression unit, the first supply unit, and the second supply unit to perform a first decompression process and a first pressurization process. In the first decompression process, the decompression unit decompresses the inside of the chamber, and the first supply unit supplies the first gas to the substrate. In the first pressurization process, the decompression unit does not decompress the inside of the chamber, and the second supply unit supplies the mixed gas to the substrate.

[0040] The control unit is configured to perform a first decompression process and a first pressurization process. In the first decompression process, the decompression unit decompresses the inside of the chamber. Therefore, in the first decompression process, the inside of the chamber is in a decompressed state. In the first decompression process, the first supply unit supplies the first gas to the substrate in the chamber. The first gas contains an organic solvent. The organic solvent of the first gas adheres to the substrate and wets the substrate. Therefore, in the first decompression step, the substrate is not dried. In the first pressurization process, the decompression unit does not decompress the inside of the chamber. In the first pressurization process, the second supply unit supplies the mixed gas to the substrate. The mixed gas contains an organic solvent and an inert gas. The inert gas of the mixed gas rapidly increases the pressure of the gas in the chamber. The organic solvent of the mixed gas adheres to the substrate and wets the substrate. Therefore, in the first pressurization process, without drying the substrate, the inside of the chamber is rapidly pressurized from a decompressed state to an atmospheric pressure state.

[0041] As described above, the substrate processing apparatus can appropriately pressurize the inside of the chamber from a reduced pressure state to an atmospheric pressure state. Specifically, the substrate processing apparatus can rapidly pressurize the inside of the chamber from a reduced pressure state to an atmospheric pressure state without drying the substrate. Therefore, even when additional processing is performed on the substrate after the first pressurization process, it is easy to perform the additional processing with appropriate quality.

Effect of the Invention

[0042] According to the substrate processing method and the substrate processing apparatus of the present invention, the inside of the chamber can be appropriately pressurized from a reduced pressure state to an atmospheric pressure state.

Brief Description of the Drawings

[0043]

Figure 1

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Embodiments for Carrying Out the Invention

[0044] Hereinafter, a substrate processing method and a substrate processing apparatus of the present invention will be described with reference to the drawings.

[0045] <1. First Embodiment> <1 - 1. Outline of Substrate Processing Apparatus> Fig. 1 is a front view showing the inside of a substrate processing apparatus 1 according to the first embodiment. The substrate processing apparatus 1 performs processing on a substrate W. The processing performed by the substrate processing apparatus 1 includes a drying process. The processing performed by the substrate processing apparatus 1 may further include a cleaning process. The substrate processing apparatus 1 is classified as a batch type. The substrate processing apparatus 1 processes a plurality of substrates W at a time.

[0046] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto - optical disk, a substrate for a photomask, or a substrate for a solar cell.

[0047] The substrate W has a thin flat plate shape. The substrate W has a substantially circular shape when viewed from the front.

[0048] The substrate W has a surface. The surface of the substrate W includes at least one of a silicon oxide film, a polysilicon film, a silicon nitride film, and a metal film.

[0049] Although illustration is omitted, the substrate W has a pattern. The pattern is formed on the surface of the substrate W. The pattern has an uneven shape. The surface of the substrate W on which the pattern is formed is referred to as a pattern formation surface.

[0050] The substrate processing apparatus 1 includes a chamber 3. The chamber 3 accommodates a plurality of substrates W. The chamber 3 accommodates a plurality of substrates W at once. The substrate W is disposed inside the chamber 3. Specifically, the chamber 3 is a container that partitions a space 5. The space 5 corresponds to the inside of the chamber 3. The substrate W is disposed in the space 5.

[0051] The chamber 3 is configured to be openable and closable. When the chamber 3 opens, the space 5 is opened. When the chamber 3 opens, the chamber 3 allows the substrate W to move between the space 5 and the outside of the chamber 3. When the chamber 3 closes, the space 5 is sealed. That is, the chamber 3 is configured to be sealable.

[0052] The substrate processing apparatus 1 includes a processing tank 11. The processing tank 11 is installed inside the chamber 3. The processing tank 11 stores a processing liquid. The processing tank 11 is open upward.

[0053] Specifically, the processing tank 11 has an opening 12a and a discharge port 12b. The opening 12a is disposed at the upper part of the processing tank 11. The discharge port 12b is disposed at the bottom of the processing tank 11.

[0054] The substrate processing apparatus 1 includes a holding unit 13. The holding unit 13 is installed inside the chamber 3. The holding unit 13 holds a plurality of substrates W at once. The holding unit 13 holds each substrate W in a substantially vertical posture. When the holding unit 13 holds the substrate W, the pattern formation surface of the substrate W is substantially vertical. When the holding unit 13 holds a plurality of substrates W, the plurality of substrates W are arranged in a row in the direction X. The direction X is horizontal. The direction X is substantially perpendicular to the pattern formation surface of the substrate W.

[0055] FIG. 1 shows directions Y and Z in addition to direction X. Direction Y is horizontal. Direction Y is perpendicular to direction X. Direction Z is vertical. Direction Z is perpendicular to direction X. Direction Z is perpendicular to direction Y. Direction Z is appropriately referred to as the vertical direction Z.

[0056] The substrate processing apparatus 1 includes a lifting mechanism 15. The lifting mechanism 15 raises and lowers the holding unit 13. The lifting mechanism 15 moves the holding unit 13, for example, in the vertical direction Z. When the lifting mechanism 15 raises and lowers the holding unit 13, the substrate W held by the holding unit 13 moves up and down integrally with the holding unit 13.

[0057] The lifting mechanism 15 moves the substrate W between a first position P1 and a second position P2. When the substrate W moves between the first position P1 and the second position P2, the substrate W passes through the opening 12a. FIG. 1 shows the substrate W at the first position P1 by a solid line. FIG. 1 shows the substrate W at the second position P2 by a dashed line. The first position P1 is located within the chamber 3. The first position P1 is located above the processing tank 11. When the substrate W is located at the first position P1, the entire substrate W does not contact the processing liquid in the processing tank 11. The second position P2 is located within the chamber 3. The second position P2 is located below the first position P1. The second position P2 is located within the processing tank 11. When the substrate W is located at the second position P2, the entire substrate W is immersed in the processing liquid in the processing tank 11.

[0058] The substrate processing apparatus 1 includes supply units 21, 31, 41, and 61. The supply unit 21 supplies an inert gas to the chamber 3. The supply unit 31 supplies a processing gas to the chamber 3. The supply unit 41 supplies a mixed gas to the chamber 3. The supply unit 61 supplies a first liquid and a second liquid to the processing tank 11.

[0059] When the substrate W is located at position P1, the supply unit 21 supplies an inert gas to the substrate W. When the substrate W is located at position P1, the supply unit 31 supplies a processing gas to the substrate W. When the substrate W is located at position P1, the supply unit 41 supplies a mixed gas to the substrate W.

[0060] The supply unit 31 is an example of the first supply unit in the present invention. The supply unit 41 is an example of the second supply unit in the present invention.

[0061] The inert gas supplied by the supply unit 21 is, for example, nitrogen gas.

[0062] The processing gas supplied by the supply unit 31 will be described. The processing gas contains an organic solvent. The processing gas contains the gas of the organic solvent. For example, the gas of the organic solvent is the vapor of the organic solvent. For example, the concentration of the organic solvent in the processing gas is high. For example, the processing gas consists substantially of only the gas of the organic solvent. For example, the processing gas contains substantially no water (water vapor). The organic solvent of the processing gas preferably has hydrophilicity. For example, the organic solvent of the processing gas is isopropyl alcohol (IPA).

[0063] The mixed gas supplied by the supply unit 41 will be described. The mixed gas contains an organic solvent and an inert gas. The mixed gas is a mixture of an organic solvent and an inert gas. The organic solvent of the mixed gas is, for example, isopropyl alcohol (IPA). The inert gas of the mixed gas is, for example, nitrogen gas.

[0064] In the first embodiment, the mixed gas contains the liquid of the organic solvent. That is, the organic solvent of the mixed gas is in the liquid phase. The organic solvent in the mixed gas is, for example, at least one of the droplets of the organic solvent or the mist of the organic solvent.

[0065] The first liquid supplied by the supply unit 61 will be described. For example, the first liquid is a rinse liquid. For example, the first liquid is pure water (DIW).

[0066] The second liquid supplied by the supply unit 61 will be described. The second liquid is a diluted organic solvent. The second liquid is, for example, an organic solvent diluted with pure water. The second liquid is, for example, a mixed liquid of pure water and an organic solvent. The organic solvent of the second liquid is, for example, isopropyl alcohol (IPA).

[0067] Illustrate the structure of the supply unit 21. The supply unit 21 has a discharge unit 22. The discharge unit 22 is installed in the chamber 3. The discharge unit 22 is arranged at a position higher than the treatment tank 11. The discharge unit 22 is arranged on both sides of the substrate W located at the first position P1 in the direction Y. The discharge unit 22 discharges an inert gas into the chamber 3. The discharge unit 22 includes a tubular member. The tubular member extends in the direction X. The tubular member has a plurality of discharge ports (not shown). The plurality of discharge ports are arranged in the direction X. The discharge unit 22 blows out the inert gas from the plurality of discharge ports.

[0068] The supply unit 21 includes a pipe 23 and a valve 24. The pipe 23 is connected to the discharge unit 22. The pipe 23 is further connected to a supply source 25. The supply source 25 stores an inert gas. The valve 24 is provided in the pipe 23. When the valve 24 opens, the inert gas flows from the supply source 25 through the pipe 23 to the discharge unit 22. When the valve 24 opens, the discharge unit 22 discharges the inert gas. When the valve 24 closes, the inert gas does not flow from the supply source 25 through the pipe 23 to the discharge unit 22. When the valve 24 closes, the discharge unit 22 does not discharge the inert gas.

[0069] Illustrate the structure of the supply unit 31. The supply unit 31 has a discharge unit 32. The discharge unit 32 is installed in the chamber 3. The discharge unit 32 is arranged at a position higher than the treatment tank 11. The discharge unit 32 is arranged on both sides of the substrate W located at the first position P1 in the direction Y. The discharge unit 32 discharges a processing gas into the chamber 3. The discharge unit 32 has a structure similar to that of the discharge unit 22, for example.

[0070] The supply unit 31 includes a pipe 33 and a valve 34. The pipe 33 is connected to the discharge unit 32. The pipe 33 is further connected to a supply source 35. The supply source 35 stores the processing gas. The valve 34 is provided in the pipe 33. The valve 34 controls the discharge of the processing gas by the discharge unit 32.

[0071] The supply source 35 may further generate a processing gas. Although not shown, the supply source 35 includes, for example, a tank and a heater. The tank is communicatively connected to the pipe 33. The tank stores a liquid of an organic solvent. The heater warms the liquid of the organic solvent in the tank. In the tank, the liquid of the organic solvent vaporizes to become a vapor of the organic solvent. That is, in the tank, a processing gas is generated.

[0072] Illustrate the structure of the supply unit 41. The supply unit 41 has a discharge unit 42. The discharge unit 42 is installed in the chamber 3. The discharge unit 42 is disposed at a position higher than the processing tank 11. The discharge unit 42 is disposed on both sides of the substrate W located at the first position P1 in the direction Y. The discharge unit 42 discharges a mixed gas into the chamber 3. The discharge unit 42 includes a plurality (for example, 20) of two-fluid nozzles. The plurality of two-fluid nozzles are arranged in two rows in the direction X. Each two-fluid nozzle mixes a liquid of an organic solvent and an inert gas to generate a mixed gas. For example, each two-fluid nozzle generates at least one of droplets of the organic solvent and mist of the organic solvent. Each two-fluid nozzle has one discharge port (not shown). Each two-fluid nozzle discharges the mixed gas from the discharge port. Each two-fluid nozzle blows out both the organic solvent and the inert gas from the discharge port. Each two-fluid nozzle injects at least one of droplets of the organic solvent and mist of the organic solvent together with the inert gas.

[0073] The discharge unit 42 is an example of the first discharge unit in the present invention.

[0074] The supply unit 41 includes pipes 43, 47 and valves 44, 48. The pipes 43, 47 are each connected to the discharge unit 42. The pipe 43 is further connected to a supply source 45. The supply source 45 stores a liquid of an organic solvent. The valve 44 is provided in the pipe 43. The valve 44 controls the supply of the organic solvent to the discharge unit 42. The pipe 47 is further connected to a supply source 49. The supply source 49 stores an inert gas. The valve 48 is provided in the pipe 47. The valve 48 controls the supply of the inert gas to the discharge unit 42. When the valves 44, 48 are opened simultaneously, the discharge unit 42 discharges a mixed gas.

[0075] The structure of the supply unit 61 is illustrated. The supply unit 61 has a discharge unit 62. The discharge unit 62 is installed in the chamber 3. The discharge unit 62 is installed in the treatment tank 11. The discharge unit 62 discharges the first liquid and the second liquid into the treatment tank 11.

[0076] The supply unit 61 includes a pipe 63 and a valve 64. The pipe 63 is connected to the discharge unit 62. The pipe 63 is further connected to a supply source 65. The supply source 65 stores the first liquid. The valve 64 is provided in the pipe 63. The valve 64 controls the discharge of the first liquid by the discharge unit 62. Similarly, the supply unit 61 includes a pipe 67 and a valve 68. The pipe 67 is connected to the discharge unit 62. The pipe 67 is further connected to a supply source 69. The supply source 69 stores the second liquid. The valve 68 is provided in the pipe 67. The valve 68 controls the discharge of the second liquid by the discharge unit 62.

[0077] The substrate processing apparatus 1 includes a decompression unit 81. The decompression unit 81 decompresses the inside of the chamber 3. Specifically, the decompression unit 81 discharges the gas in the chamber 3 to the outside of the chamber 3. Here, when the decompression unit 81 decompresses the inside of the chamber 3, the pressure of the gas in the chamber 3 may continue to decrease or may not continue to decrease. When the decompression unit 81 decompresses the inside of the chamber 3, the pressure of the gas in the chamber 3 may be maintained, for example, within a predetermined negative pressure range.

[0078] The structure of the decompression unit 81 is illustrated. The decompression unit 81 includes a pipe 82 and an exhaust pump 83. The pipe 82 and the exhaust pump 83 are provided outside the chamber 3. The pipe 82 is communicatively connected to the chamber 3. The exhaust pump 83 is provided in the pipe 82. The exhaust pump 83 is, for example, a vacuum pump. When the decompression unit 81 operates, the exhaust pump 83 discharges the gas in the chamber 3 to the outside of the chamber 3 through the pipe 82. When the operation of the decompression unit 81 stops, the exhaust pump 83 does not discharge the gas in the chamber 3 to the outside of the chamber 3.

[0079] The substrate processing apparatus 1 has a pressure sensor 89. The pressure sensor 89 is installed in the chamber 3. The pressure sensor 89 detects the pressure of the gas in the chamber 3.

[0080] The substrate processing apparatus 1 includes a drainage unit 95. The drainage unit 95 discharges the processing liquid in the chamber 3 to the outside of the chamber 3. In the first embodiment, the drainage unit 95 discharges the processing liquid in the processing tank 11 to the outside of the chamber 3. The drainage unit 95 includes a pipe 96 and a drain valve 97. The pipe 96 is communicatively connected to the processing tank 11. The pipe 96 has a first end and a second end. The first end of the pipe 96 is located in the chamber 3. The first end of the pipe 96 is communicatively connected to the processing tank 11. The first end of the pipe 96 is connected to the discharge port 12b. The pipe 96 extends downward from the processing tank 11. The pipe 96 penetrates the chamber 3 and extends from the inside of the chamber 3 to the outside of the chamber 3. The second end of the pipe 96 is located outside the chamber 3. The second end of the pipe 96 is open to the atmosphere outside the chamber 3. The drain valve 97 is provided in the pipe 96. The drain valve 97 opens and closes the pipe 96. When the drain valve 97 opens, the pipe 96 is opened to the outside of the chamber 3. When the drain valve 97 opens, the inside of the processing tank 11 is opened to the outside of the chamber 3 through the pipe 96. When the drain valve 97 opens, the drainage unit 95 allows the processing liquid in the processing tank 11 to flow out to the outside of the chamber 3 through the pipe 96. When the drain valve 97 closes, the drainage unit 95 allows the processing tank 11 to store the processing liquid.

[0081] The pipe 96 is an example of the drain pipe in the present invention.

[0082] Figure 2 is a control block diagram of the substrate processing apparatus 1. The substrate processing apparatus 1 includes a control unit 101. The control unit 101 controls each element of the substrate processing apparatus 1. Specifically, the control unit 101 controls the elevating mechanism 15. The control unit 101 controls the supply units 21, 31, 41, 61. The control unit 101 controls the valves 24, 34, 44, 48, 64, 68. The control unit 101 controls the decompression unit 81. The control unit 101 controls the exhaust pump 83. The control unit 101 acquires the detection result of the pressure sensor 89. The control unit 101 controls the drain unit 95. The control unit 101 controls the drain valve 97.

[0083] The control unit 101 is realized by a central processing unit (CPU) that executes various processes, a RAM (Random-Access Memory) that serves as a work area for arithmetic processing, a storage medium such as a fixed disk, and the like. The control unit 101 has various information stored in advance in the storage medium. The information possessed by the control unit 101 is, for example, processing information for controlling the substrate processing apparatus 1. The processing information is also called a processing recipe.

[0084] The processing information includes a reference value. The reference value relates to the pressure of the gas in the chamber 3. The reference value is set in advance before the execution of the substrate processing method.

[0085] <1-2. Operation Example of Substrate Processing Apparatus> A wet etching process is performed on the substrate W in an apparatus (not shown) different from the substrate processing apparatus 1. The wet etching process is, for example, a process of supplying an etching solution to the substrate W. Thereafter, the substrate W is transported to the substrate processing apparatus 1. The chamber 3 opens. A plurality of substrates W enter the chamber 3. The holding unit 13 receives the plurality of substrates W. With the chamber 3 containing the substrates W, the chamber 3 closes.

[0086] With the chamber 3 closed, the substrate processing apparatus 1 executes a substrate processing method on the substrate W. The substrate processing method is to process a plurality of substrates W accommodated in the chamber 3 at once. A specific substrate processing method is exemplified below.

[0087] FIG. 3 is a flowchart showing the procedure of the substrate processing method according to the first embodiment. The substrate processing method includes a first immersion step, a first depressurization step, a first pressurization step, a determination step, a first drainage step, a second depressurization step, and a drying step. The first immersion step, the first depressurization step, the first pressurization step, the determination step, the first drainage step, the second depressurization step, and the drying step are executed in this order.

[0088] FIG. 4(a) is a diagram schematically showing the substrate processing apparatus 1 in the first immersion step. FIG. 4(b) is a diagram schematically showing the substrate processing apparatus 1 in the first depressurization step. FIG. 4(c) is a diagram schematically showing the substrate processing apparatus 1 in the first pressurization step. FIG. 4(d) is a diagram schematically showing the substrate processing apparatus 1 in the first drainage step. FIG. 4(e) is a diagram schematically showing the substrate processing apparatus 1 in the second depressurization step. FIGS. 4(a)-4(e) each simply show the substrate processing apparatus 1. For example, FIGS. 4(a)-4(e) each omit the illustration of the holding unit 13 and the elevating mechanism 15. In the following description, each element of the substrate processing apparatus 1 shall operate according to the control of the control unit 101.

[0089] Step S1: First immersion step Referring to FIG. 4(a), the processing tank 11 stores the first liquid L1 supplied from the supply unit 61. The elevating mechanism 15 moves the substrate W to the second position P2. The substrate W is immersed in the first liquid L1 in the processing tank 11.

[0090] Step S2: First depressurization step (first depressurization process) Refer to FIG. 4(b). The supply unit 41 supplies a processing gas into the chamber 3. In this specification, the processing gas supplied to the chamber 3 in the first pressure reduction step is appropriately referred to as the "first gas G1". The pressure reduction unit 81 operates. That is, the pressure reduction unit 81 reduces the pressure inside the chamber 3. "VAC" in FIG. 4(b) indicates that the pressure reduction unit 81 is operating. The inside of the chamber 3 becomes a decompressed state D. When the inside of the chamber is in the decompressed state D, the pressure of the gas inside the chamber is a negative pressure. The atmosphere of the first gas G1 is formed inside the chamber 3. The elevator mechanism 15 moves the substrate W from the second position P2 to the first position P1. The substrate W is lifted from the first liquid L1 in the processing tank 11. In the state D where the inside of the chamber 3 is decompressed, the supply unit 41 supplies the first gas G1 to the substrate W inside the chamber 3.

[0091] The substrate W is exposed to the first gas G1. The gas of the organic solvent contained in the first gas G1 condenses on the surface of the substrate W. That is, the gas of the organic solvent contained in the first gas G1 changes to a liquid of the organic solvent on the surface of the substrate W. The liquid of the organic solvent derived from the first gas G1 adheres to the substrate W and wets the substrate W. For this reason, the substrate W is not dried. The organic solvent derived from the first gas G1 removes the first liquid L1 on the substrate W. Since the inside of the chamber 3 is in the decompressed state D, the first liquid L1 on the substrate W is quickly replaced by the organic solvent derived from the first gas G1. The organic solvent derived from the first gas G1 covers the surface of the substrate W.

[0092] Step S3: First pressurization step (first pressurization process) Refer to FIG. 4(c). The substrate W is located at the first position P1. The decompression unit 81 stops operating. That is, the decompression unit 81 does not decompress the inside of the chamber 3. The supply unit 41 supplies the mixed gas K to the substrate W in the chamber 3. Specifically, the supply unit 41 generates the mixed gas K and supplies the generated mixed gas K into the chamber 3 by the discharge unit 42. Thereby, the inside of the chamber 3 is pressurized from the decompressed state D to the atmospheric pressure state J. Specifically, the inert gas of the mixed gas K quickly pressurizes the inside of the chamber 3 from the decompressed state D to the atmospheric pressure state J. In other words, the inert gas of the mixed gas K quickly raises the pressure of the gas in the chamber 3. This is because the inert gas is difficult to condense.

[0093] The atmosphere in the chamber 3 contains the organic solvent of the mixed gas K. The substrate W receives the organic solvent of the mixed gas K. Specifically, the liquid of the organic solvent contained in the mixed gas K adheres to the substrate W and wets the substrate W. The liquid of the organic solvent in the mixed gas K covers the surface of the substrate W. Therefore, the substrate W is not dried. Without drying the substrate W, the inside of the chamber 3 becomes the atmospheric pressure state J.

[0094] The atmospheric pressure state J will be described. That the inside of the chamber 3 is in the atmospheric pressure state J means that the pressure of the gas in the chamber 3 is at atmospheric pressure. Atmospheric pressure is not a specific single value but a range defined by two different values. Atmospheric pressure is higher than the pressure of the gas in the chamber 3 when the inside of the chamber 3 is in the decompressed state D. Atmospheric pressure is close to the pressure of the gas outside the chamber 3. For example, atmospheric pressure is substantially equal to the pressure of the gas outside the chamber 3. For example, atmospheric pressure includes standard atmospheric pressure (1 atmosphere, 101325 Pa).

[0095] In the first pressurization step, the elevating mechanism 15 may keep the substrate W stationary at the first position P1. Alternatively, in the first pressurization step, the elevating mechanism 15 may move the substrate W up and down. For example, the elevating mechanism 15 may move the substrate W up and down near the first position P1. For example, the elevating mechanism 15 may move the substrate W up and down in the vertical direction Z. Alternatively, the elevating mechanism 15 may further include a mechanism (not shown) for rocking the substrate W. The elevating mechanism 15 may rock the substrate W by means of the mechanism. When the substrate W moves up and down or rocks, the entire substrate W preferably receives the mixed gas K. When the substrate W moves up and down or rocks, the organic solvent in the mixed gas K adheres more uniformly to the entire surface of the substrate W.

[0096] Step S4: Determination step Based on the detection result of the pressure sensor 89, the control unit 101 determines whether the inside of the chamber 3 has reached the normal pressure state J. For example, the control unit 101 acquires the measured value of the gas pressure in the chamber 3 based on the detection result of the pressure sensor 89. The control unit 101 compares the measured value with a reference value. When the measured value is less than the reference value, the control unit 101 does not determine that the inside of the chamber 3 has reached the normal pressure state J. When the measured value is greater than or equal to the reference value, the control unit 101 determines that the inside of the chamber 3 has reached the normal pressure state J. When the control unit 101 does not determine that the inside of the chamber 3 has reached the normal pressure state J, the process returns to step S3 and the first pressurization step is continued. When the control unit 101 determines that the inside of the chamber 3 has reached the normal pressure state J, the first pressurization step is terminated and the process proceeds to step S5.

[0097] Step S5: First drainage step <First normal pressure step> Refer to Fig. 4(d). The substrate W is located at the first position P1. The supply unit 41 supplies the mixed gas K to the substrate W in the chamber 3. The decompression unit 81 is in a stopped state. The inside of the chamber 3 is maintained in an atmospheric pressure state J. The atmosphere in the chamber 3 contains the organic solvent of the mixed gas K. The drainage unit 95 discharges the first liquid L1 in the chamber 3 to the outside of the chamber 3. Specifically, the drain valve 97 opens the pipe 96 to the atmosphere outside the chamber 3. The first liquid L1 stored in the treatment tank 11 is discharged to the outside of the chamber 3 through the pipe 96. In this way, the first liquid L1 flows from the inside of the chamber 3 to the outside of the chamber 3 through the pipe 96.

[0098] The first drainage step of the first embodiment is included in the first atmospheric pressure step of the present invention.

[0099] Step S6: Second decompression step Refer to Fig. 4(e). The supply unit 41 supplies the mixed gas K. The atmosphere in the chamber 3 contains the organic solvent of the mixed gas K. The drain valve 97 closes. The supply unit 61 supplies the second liquid L2 to the treatment tank 11. The treatment tank 11 stores the second liquid L2. The lifting mechanism 15 moves the substrate W from the first position P1 to the second position P2. The substrate W is immersed in the second liquid L2 in the treatment tank 11. The decompression unit 81 starts to operate. The inside of the chamber 3 changes from the atmospheric pressure state J to a decompressed state D.

[0100] Step S7: Drying step The illustration of the drying step is omitted. The substrate W is located at the first position P1. The decompression unit 81 is operating. The inside of the chamber 3 is maintained in a decompressed state D. The supply unit 21 supplies an inert gas to the substrate W. The inert gas removes the second liquid L2 on the substrate W. When the second liquid L2 is removed from the substrate W, the substrate W is dried.

[0101] After the drying step, the inside of the chamber 3 is pressurized. For example, the supply unit 21 supplies an inert gas and the decompression unit 81 stops operating. Thereby, the inside of the chamber 3 changes from the decompressed state D to the atmospheric pressure state J.

[0102] After the chamber 3 reaches the normal pressure state J, the chamber 3 is opened. Then, the substrate W in the chamber 3 is carried out of the chamber 3.

[0103] <1-3. Effects of the First Embodiment> The substrate processing method includes a first depressurization step and a first pressurization step. In the first depressurization step, the inside of the chamber 3 is in a depressurized state, and the first gas G1 is supplied to the substrate W in the chamber 3. The first gas G1 contains an organic solvent. Therefore, the substrate W is not dried in the first depressurization step. The first pressurization step is performed after the first depressurization step. In the first pressurization step, the mixed gas K is supplied to the substrate W in the chamber 3, and the inside of the chamber 3 is pressurized from the depressurized state D to the normal pressure state J. The mixed gas K contains an organic solvent and an inert gas. Therefore, in the first pressurization step, the inside of the chamber 3 can be appropriately pressurized from the depressurized state D to the normal pressure state J. Specifically, in the first pressurization step, the inside of the chamber 3 can be quickly pressurized from the depressurized state D to the normal pressure state J without drying the substrate W in the chamber 3.

[0104] The substrate processing method includes a first drainage step. The first drainage step is performed after the first pressurization step. In the first drainage step, the inside of the chamber 3 is maintained at the normal pressure state J, and drainage processing is performed. When the inside of the chamber 3 is in the normal pressure state J, the pressure of the gas in the chamber 3 is close to the pressure of the gas outside the chamber 3. Therefore, it is easy to perform the drainage processing in the first drainage step. Thus, the first drainage step is preferably performed.

[0105] The mixed gas K contains a liquid of an organic solvent. The liquid of the organic solvent in the mixed gas K adheres to the surface of the substrate W and preferably wets the substrate W. Therefore, the mixed gas K preferably prevents the substrate W from being dried.

[0106] In the first pressurization step, the mixed gas K is generated, and the generated mixed gas K is supplied into the chamber 3 by the discharge part 42. In other words, in the first pressurization step, the mixed gas K is not generated inside the chamber 3. Therefore, in the first pressurization step, the inert gas supplied into the chamber 3 is accompanied by the organic solvent. In the first pressurization step, the inert gas supplied into the chamber 3 is not separated from the organic solvent. For this reason, the substrate W does not receive only the inert gas. The substrate W receives the organic solvent together with the inert gas. Thus, in the first pressurization step, the drying of the substrate W is more reliably prevented. For example, the first pressurization step preferably prevents the substrate W from having a dried portion. For example, in the first pressurization step, not only the overall drying of the substrate W but also the partial drying of the substrate W is preferably prevented. For example, in the first pressurization step, not only the overall drying of the substrate W but also the local drying of the substrate W is preferably prevented.

[0107] The substrate processing method further includes a first immersion step. The first immersion step is performed before the first depressurization step. In the first immersion step, the substrate W is immersed in the first liquid L1 stored in the processing tank 11. The processing tank 11 is installed inside the chamber 3. In the first drainage step, the first liquid L1 is discharged outside the chamber 3. As described above, in the first drainage step, the inside of the chamber 3 is maintained at the normal pressure state J. Therefore, in the first drainage step, it is easy to discharge the first liquid L1 inside the chamber 3 to the outside of the chamber 3.

[0108] In the first drainage step, the pipe 96 is opened to the atmosphere outside the chamber 3. The pipe 96 is connected to the processing tank 11 in a communicating manner. As described above, in the first drainage step, the inside of the chamber 3 is in the normal pressure state J. For this reason, in the first drainage step, due to the self-weight of the first liquid L1, the first liquid L1 flows from the inside of the chamber 3 to the outside of the chamber 3 through the pipe 96. In the first drainage step, the first liquid L1 naturally flows from the inside of the chamber 3 to the outside of the chamber 3 through the pipe 96. In the first drainage step, it is not necessary to forcibly send the first liquid L1 from the inside of the chamber 3 to the outside of the chamber 3. Therefore, in the first drainage step, it is easy to discharge the first liquid L1 inside the chamber 3 to the outside of the chamber 3 through the pipe 96.

[0109] The substrate processing method includes a second depressurization step. In the second depressurization step, the inside of the chamber 3 is in a depressurized state, and the substrate W is immersed in the second liquid L2 stored in the processing tank 11. As described above, the substrate W is not dried in the first pressurization step. Further, in the first drainage step, the inside of the chamber 3 is maintained at the normal pressure state J. Therefore, it is difficult to dry the substrate W in the first drainage step. The second depressurization step is performed after the first drainage step. Thus, it is difficult to dry the substrate W after the first depressurization step and before the second depressurization step. Therefore, in the second depressurization step, it is easy to process the substrate W with appropriate quality.

[0110] From the first pressurization step until the substrate W is immersed in the second liquid L2 of the processing tank 11, the atmosphere in the chamber 3 contains an organic solvent. Therefore, from the first pressurization step until the substrate W is immersed in the second liquid L2, the organic solvent contained in the atmosphere in the chamber 3 wets the substrate W. Thus, it is difficult to dry the substrate W after the first depressurization step and before the second depressurization step. Therefore, in the second depressurization step, the substrate W is processed with appropriate quality.

[0111] From the first pressurization step until the substrate W is immersed in the second liquid L2 of the processing tank 11, the mixed gas K is further supplied to the substrate W in the chamber 3. Therefore, from the first pressurization step until the substrate W is immersed in the second liquid L2 in the processing tank 11, the atmosphere in the chamber 3 preferably contains an organic solvent.

[0112] The substrate processing apparatus 1 includes a chamber 3, supply units 31 and 41, a pressure reduction unit 81, and a control unit 101. The chamber 3 houses a plurality of substrates W. The supply unit 31 supplies a first gas G1 to the substrate W in the chamber 3. The supply unit 41 supplies a mixed gas K to the substrate W in the chamber 3. The pressure reduction unit 81 reduces the pressure inside the chamber 3. The control unit 101 controls the supply units 31 and 41 and the pressure reduction unit 81 to execute a first pressure reduction process and a first pressure increase process. In the first pressure reduction process, the pressure reduction unit 81 reduces the pressure inside the chamber 3, and the supply unit 31 supplies the first gas G1 to the substrate W. The first pressure increase process is executed after the first pressure reduction process. In the first pressure increase process, the pressure reduction unit 81 does not reduce the pressure inside the chamber 3, and the supply unit 41 supplies the mixed gas K to the substrate W. Therefore, in the first pressure increase process, the inside of the chamber 3 is rapidly pressurized from the reduced pressure state D to the normal pressure state J without drying the substrate W. Thus, the substrate processing apparatus 1 can appropriately pressurize the inside of the chamber 3 from the reduced pressure state D to the normal pressure state J. Therefore, after the first pressure increase process, the substrate processing in the second pressure reduction step is preferably executed.

[0113] <2. Second Embodiment> Referring to the drawings, the second embodiment will be described. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0114] <2-1. Outline of Substrate Processing Apparatus> FIG. 5 is a front view showing the inside of the substrate processing apparatus 1 according to the second embodiment.

[0115] As described above, the mixed gas K contains an organic solvent and an inert gas. In the second embodiment, the mixed gas K contains a gas of an organic solvent. That is, the organic solvent in the mixed gas K is in the gas phase. For example, the gas of the organic solvent in the mixed gas K is the vapor of the organic solvent. For example, the mixed gas K contains the vapor of the organic solvent and an inert gas. For example, the organic solvent in the mixed gas K is isopropyl alcohol. For example, the inert gas in the mixed gas K is nitrogen gas.

[0116] The structure of the supply unit 41 is illustrated. The supply unit 41 has a discharge unit 52. The discharge unit 52 is installed in the chamber 3. The discharge unit 52 is arranged at a position higher than the processing tank 11. The discharge unit 52 is arranged on both sides of the substrate W located at the first position P1 in the direction Y. The discharge unit 52 discharges the mixed gas K into the chamber 3. The discharge unit 52 has a structure similar to, for example, the structure of the discharge unit 22.

[0117] The discharge unit 52 is an example of the first discharge unit in the present invention.

[0118] The supply unit 41 includes a pipe 53 and a valve 54. The pipe 53 is connected to the discharge unit 52. The pipe 53 is further connected to a supply source 55. The supply source 55 stores the mixed gas K. The valve 54 is provided in the pipe 53. The valve 54 controls the discharge of the mixed gas K by the discharge unit 52.

[0119] The supply source 55 may further generate the mixed gas K. Although not shown, the supply source 55 includes, for example, a tank and a heater. The tank is communicatively connected to the pipe 53. The tank stores the liquid of the organic solvent. The tank further stores an inert gas. The heater warms the liquid of the organic solvent in the tank. In the tank, the liquid of the organic solvent vaporizes to become the vapor of the organic solvent. In the tank, the vapor of the organic solvent and the inert gas are mixed to become the mixed gas K. That is, in the tank, the mixed gas K is generated.

[0120] In the second embodiment, the supply unit 61 does not supply the first liquid L1. Therefore, in the second embodiment, the supply unit 61 does not include the pipe 63, the valve 64, and the supply source 65.

[0121] Although not shown, the control unit 101 controls the valve 54.

[0122] <2-2. Operation Example of Substrate Processing Apparatus> FIG. 6 is a flowchart showing the procedure of the substrate processing method of the second embodiment. The substrate processing method includes steps S11 - S14. The substrate processing method includes a first depressurization step, a first pressurization step, a determination step, a second immersion step, and a drying step. The first depressurization step, the first pressurization step, the determination step, the second immersion step, and the drying step are executed in this order.

[0123] FIG. 7(a) is a diagram schematically showing the substrate processing apparatus 1 in the first depressurization step. FIG. 7(b) is a diagram schematically showing the substrate processing apparatus 1 in the first pressurization step. FIG. 7(c) is a diagram schematically showing the substrate processing apparatus 1 in the second immersion step. FIG. 7(d) is a diagram schematically showing the substrate processing apparatus 1 in the drying step. FIGS. 7(a) - 7(d) each simply show the substrate processing apparatus 1.

[0124] Step S11: First depressurization step (first depressurization process) Referring to FIG. 7(a). The substrate W is located at the first position P1. The depressurization unit 81 depressurizes the inside of the chamber 3. The inside of the chamber 3 becomes the depressurized state D. In the state D where the inside of the chamber 3 is depressurized, the supply unit 31 supplies the first gas G1 to the substrate W in the chamber 3. The substrate W receives the organic solvent derived from the first gas G1. The substrate W is not dried.

[0125] Step S12: First pressurization step (first pressurization process) Referring to FIG. 7(b). The first pressurization step of the second embodiment is substantially the same as the first pressurization step of the first embodiment. Briefly, the substrate W is located at the first position P1. The depressurization unit 81 stops operating and does not depressurize the inside of the chamber 3. The supply unit 41 supplies the mixed gas K to the substrate W in the chamber 3. Specifically, the supply unit 41 generates the mixed gas K and supplies the generated mixed gas K into the chamber 3 by the discharge unit 52. Thereby, the inside of the chamber 3 is pressurized from the depressurized state D to the normal pressure state J.

[0126] The atmosphere inside chamber 3 contains the organic solvent of the mixed gas K. The substrate W receives the organic solvent of the mixed gas K. Specifically, the gas of the organic solvent contained in the mixed gas K condenses on the surface of the substrate W. That is, the gas of the organic solvent in the mixed gas K changes to the liquid of the organic solvent on the surface of the substrate W. The liquid of the organic solvent derived from the mixed gas K adheres to the substrate W and wets the substrate W. The liquid of the organic solvent derived from the mixed gas K covers the surface of the substrate W. For this reason, the substrate W is not dried. Without drying the substrate W, the inside of chamber 3 becomes the normal pressure state J.

[0127] In the first pressurization step, the elevating mechanism 15 may stationary the substrate W at the first position P1. Alternatively, in the first pressurization step, the elevating mechanism 15 may move the substrate W up and down. For example, the elevating mechanism 15 may move the substrate W up and down near the first position P1. For example, the elevating mechanism 15 may move the substrate W up and down in the vertical direction Z. Alternatively, the elevating mechanism 15 may further be provided with a mechanism (not shown) for rocking the substrate W. The elevating mechanism 15 may rock the substrate W by the mechanism. When the substrate W moves up and down or rocks, the whole of the substrate W preferably receives the mixed gas K. When the substrate W moves up and down or rocks, the organic solvent derived from the mixed gas K adheres more uniformly to the entire surface of the substrate W.

[0128] Step S13: Determination step Based on the detection result of the pressure sensor 89, the control unit 101 determines whether the inside of chamber 3 has become the normal pressure state J. If the control unit 101 does not determine that the inside of chamber 3 has become the normal pressure state J, it returns to step S12 and continues the first pressurization step. If the control unit 101 determines that the inside of chamber 3 has become the normal pressure state J, it ends the first pressurization step and proceeds to step S14.

[0129] Step S14: Second immersion step <First normal pressure step> Refer to FIG. 7(c). The pressure reducing unit 81 is stopped. The inside of the chamber 3 is maintained at the normal pressure state J. The atmosphere in the chamber 3 contains the organic solvent of the mixed gas K. The supply unit 41 stops the supply of the mixed gas K. The treatment tank 11 stores the second liquid L2 supplied from the supply unit 61. The elevating mechanism 15 moves the substrate W from the first position P1 to the second position P2. The substrate W is immersed in the second liquid L2 in the treatment tank 11.

[0130] The second immersion step of the second embodiment is included in the first normal pressure step of the present invention.

[0131] Step S15: Drying step Refer to FIG. 7(d). The substrate W is located at the first position P1. The pressure reducing unit 81 starts operating and reduces the pressure inside the chamber 3. The inside of the chamber 3 changes from the normal pressure state J to the reduced pressure state D. The supply unit 21 supplies the inert gas N to the substrate W. The inert gas removes the second liquid L2 on the substrate W. The substrate W is dried.

[0132] <2-3. Effects of the second embodiment> The second embodiment exhibits the same effects as the first embodiment. For example, with the substrate processing method of the second embodiment, the inside of the chamber 3 can also be appropriately pressurized from the reduced pressure state D to the normal pressure state J. Furthermore, according to the second embodiment, the following effects are achieved.

[0133] The mixed gas K contains the gas of the organic solvent. The gas of the organic solvent in the mixed gas K condenses on the surface of the substrate W and changes to the liquid of the organic solvent on the surface of the substrate W. The organic solvent derived from the mixed gas K preferably wets the substrate W. Therefore, the mixed gas K preferably prevents the substrate W from being dried.

[0134] The substrate processing method includes a second immersion step. In the second immersion step, the inside of the chamber 3 is maintained at normal pressure state J, and the substrate W is immersed in the second liquid L2 stored in the processing tank 11. The second immersion step is executed after the first pressurization step. In the first pressurization step, the substrate is not dried. Therefore, before the second immersion step after the first depressurization step, the substrate W is not dried. Thus, in the second immersion step, the substrate W is processed with appropriate quality.

[0135] From the first pressurization step until the substrate W is immersed in the second liquid L2 of the processing tank 11, the atmosphere in the chamber 3 contains an organic solvent. For this reason, from the first pressurization step until the substrate W is immersed in the second liquid L2 of the processing tank 11, the organic solvent contained in the atmosphere in the chamber 3 wets the substrate. Therefore, before the second immersion step after the first depressurization step, the substrate W is not dried. Thus, in the second immersion step, the substrate W is processed with appropriate quality.

[0136] Note that in the second immersion step of the second embodiment, the mixed gas K is not supplied into the chamber 3, but the atmosphere in the chamber 3 contains an organic solvent. The reason is as follows. In the first pressurization step, the atmosphere of the mixed gas K is formed in the chamber 3. In the second immersion step, the inside of the chamber 3 is not depressurized. For this reason, in the second immersion step, the atmosphere of the mixed gas K remains in the chamber 3. Thus, also in the second immersion step, the atmosphere of the chamber 3 contains the organic solvent of the mixed gas K.

[0137] <3. Third Embodiment> Referring to the drawings, the third embodiment will be described. Note that the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0138] <3-1. Outline of Substrate Processing Apparatus> FIG. 8 is a front view showing the inside of the substrate processing apparatus 1 according to the third embodiment. The substrate processing apparatus 1 includes a supply unit 71. The supply unit 71 supplies a water repellent to the chamber 3. When the substrate W is at the position P1, the supply unit 71 supplies the water repellent to the substrate W.

[0139] The water repellent supplied by the supply unit 71 will be described. The water repellent makes the surface of the substrate W water-repellent. The water repellent modifies the surface of the substrate W to be water-repellent. The water repellent increases the contact angle between the surface of the substrate W and water. The water repellent forms a water-repellent film on the surface of the substrate W. The surface of the substrate W is coated with the water repellent. The water repellent is also called an interface modifier. The water repellent is also called a hydrophobizing agent.

[0140] The water repellent contains, for example, at least one of a silicone-based water repellent and a metal-based water repellent. The silicone-based water repellent makes silicon water-repellent. The silicone-based water repellent makes a compound containing silicon water-repellent. The silicone-based water repellent is, for example, a silane coupling agent. The silane coupling agent contains, for example, at least one of hexamethyldisilazane (HMDS), tetramethylsilane (TMS), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chlorinated water repellent. The non-chlorinated water repellent contains, for example, at least one of dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and an organosilane compound. The metal-based water repellent makes metal water-repellent. The metal-based water repellent makes a compound containing metal water-repellent. The metal-based water repellent contains, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.

[0141] The water repellent may further contain a solvent. For example, the solvent may dilute at least one of the silicone-based water repellent and the metal-based water repellent. The solvent preferably has compatibility with an organic solvent. The solvent contains, for example, at least one of isopropyl alcohol (IPA) and propylene glycol monomethyl ether acetate (PGMEA).

[0142] The water repellent agent contains at least one of a gas of the water repellent agent and a liquid of the water repellent agent. The supply unit 71 supplies at least one of a gas of the water repellent agent and a liquid of the water repellent agent. For example, the gas of the water repellent agent is the vapor of the water repellent agent.

[0143] The structure of the supply unit 71 is illustrated. The supply unit 71 has a discharge part 72. The discharge part 72 is installed in the chamber 3. The discharge part 72 is arranged at a position higher than the treatment tank 11. The discharge part 72 is arranged on both sides of the substrate W located at the first position P1 in the direction Y. The discharge part 72 discharges the water repellent agent into the chamber 3. The discharge part 72 has, for example, a structure similar to the structure of the discharge part 22.

[0144] The supply unit 71 includes a pipe 73 and a valve 74. The pipe 73 is connected to the discharge part 72. The pipe 73 is further connected to a supply source 75. The supply source 75 stores the water repellent agent. The valve 74 is provided in the pipe 73. The valve 74 controls the discharge of the water repellent agent by the discharge part 72.

[0145] The substrate processing apparatus 1 includes a dump unit 91. The dump unit 91 discharges the processing liquid in the processing tank 11. The chamber 3 receives the processing liquid discharged from the processing tank 11. The processing liquid discharged from the processing tank 11 accumulates at the bottom of the chamber 3. The dump unit 91 includes a dump valve 92. The dump valve 92 is installed inside the chamber 3. The dump valve 92 is attached to the bottom of the processing tank 11. The dump valve 92 is communicatively connected to the discharge port 12b. When the dump valve 92 opens, the dump unit 91 allows the processing liquid to flow down from the inside of the processing tank 11 to the outside of the processing tank 11 through the dump valve 92. When the dump valve 92 closes, the dump unit 91 allows the processing tank 11 to store the processing liquid.

[0146] The liquid discharge unit 95 discharges the processing liquid in the chamber 3 to the outside of the chamber 3. In the third embodiment, the liquid discharge unit 95 discharges the processing liquid accumulated at the bottom of the chamber 3 to the outside of the chamber 3. The liquid discharge unit 95 includes a drain valve 97 and a pipe 99 in addition to the drain valve 97. The pipe 99 is provided outside the chamber 3. The pipe 99 is communicatively connected to the chamber 3. The pipe 99 has a first end and a second end. The first end of the pipe 99 is communicatively connected to the chamber 3. The first end of the pipe 99 is connected to the bottom of the chamber 3. The pipe 99 extends downward from the chamber 3. The second end of the pipe 99 is open to the atmosphere outside the chamber 3. The drain valve 97 is provided in the pipe 99. The drain valve 97 opens and closes the pipe 99. When the drain valve 97 opens, the pipe 99 is opened to the outside of the chamber 3. When the drain valve 97 opens, the inside of the chamber 3 is opened to the outside of the chamber 3 through the pipe 99. When the drain valve 97 opens, the liquid discharge unit 95 allows the processing liquid in the chamber 3 to flow to the outside of the chamber 3 through the pipe 96. When the drain valve 97 closes, the liquid discharge unit 95 allows the inside of the chamber 3 to be in a depressurized state D.

[0147] The pipe 99 is an example of the drain pipe in the present invention.

[0148] Although not shown, the control unit 101 controls the supply unit 71. The control unit 101 controls the valve 74. The control unit 101 controls the dump unit 91. The control unit 101 controls the dump valve 92.

[0149] <3-2. Operating Example of Substrate Processing Apparatus> FIGS. 9 and 10 are flowcharts showing the procedures of the substrate processing method according to the third embodiment. The substrate processing method includes steps S21 - S38. Steps S21 - S27 are executed in this order. Steps S28 - S29 are executed after step S27 and before step S30. Steps S30 - S38 are executed in this order.

[0150] Figs. 11(a)-11(e), 12(a)-12(e), 13(a)-13(e), 14(a)-14(b) are diagrams schematically showing the substrate processing apparatus 1 in steps S21-S30, S32-S38, respectively. Figs. 11(a)-11(e), etc. simply show the substrate processing apparatus 1.

[0151] Step S21: First supply step Referring to Fig. 11(a). The substrate W is located at the first position P1. The inside of the chamber 3 is in the normal pressure state J. The supply unit 61 supplies the second liquid L2 to the processing tank 11. The dump valve 92 is closed. The processing tank 11 stores the first liquid L1. Then, the supply unit 61 stops the supply of the first liquid L1.

[0152] Step S22: First immersion step Referring to Fig. 11(b). The inside of the chamber 3 is in the normal pressure state J. The elevating mechanism 15 moves the substrate W from the first position P1 to the second position P2. The substrate W is immersed in the first liquid L1 in the processing tank 11.

[0153] Step S23: Atmosphere formation step Referring to Fig. 11(c). The substrate W is located at the second position P2 and is immersed in the first liquid L1 in the processing tank 11. The supply unit 21 supplies the inert gas N into the chamber 3. The decompression unit 81 starts operating. The drain valve 97 is closed. The inside of the chamber 3 changes from the normal pressure state J to the decompressed state D. An atmosphere of the inert gas N is formed in the chamber 3 while the substrate W is immersed in the first liquid L1.

[0154] Step S24: Atmosphere formation step Referring to Fig. 11(d). The substrate W is located at the second position P2 and is immersed in the first liquid L1 in the processing tank 11. The decompression unit 81 is operating. The inside of the chamber 3 is maintained in the decompressed state D. The supply unit 21 stops the supply of the inert gas N. The supply unit 31 supplies the first gas G1 into the chamber 3. An atmosphere of the first gas G1 is formed in the chamber 3 while the substrate W is immersed in the first liquid L1.

[0155] The atmosphere forming step in step S24 is an example of the first atmosphere step in the present invention.

[0156] Step S25: First gas treatment step Refer to FIG. 11(e). The pressure reducing unit 81 is in operation. That is, the pressure reducing unit 81 reduces the pressure inside the chamber 3. The inside of the chamber 3 is maintained in a depressurized state D. The supply unit 31 supplies the first gas G1 into the chamber 3. The elevating mechanism 15 moves the substrate W from the second position P2 to the first position P1. In the state D where the inside of the chamber 3 is depressurized, the substrate W is lifted from the first liquid L1 in the treatment tank 11 above the treatment tank 11. The supply unit 31 supplies the first gas G1 to the substrate W. The substrate W receives the organic solvent derived from the first gas G1. The organic solvent derived from the first gas G1 removes the first liquid L1 on the substrate W. The liquid of the organic solvent derived from the first gas G1 covers the surface of the substrate W.

[0157] The first gas treatment step is an example of the first pressure reducing step in the present invention. The treatment of the first gas treatment step is an example of the first pressure reducing treatment in the present invention.

[0158] Step S26: Dumping step Refer to FIG. 12(a). The substrate W is located at the first position P1. The supply unit 31 supplies the first gas G1 to the substrate W in the chamber 3. The pressure reducing unit 81 is in operation. The inside of the chamber 3 is maintained in a depressurized state D. The dump valve 92 opens. The dump unit 91 discharges the first liquid L1 from the treatment tank 11. The drain valve 97 is closed. The first liquid L1 accumulates at the bottom of the chamber 3.

[0159] Step S27: Water repellent treatment step Refer to Fig. 12(b). The substrate W is located at the first position P1. The decompression unit 81 is in operation. The inside of the chamber 3 is maintained in a decompressed state D. The supply unit 31 stops supplying the first gas G1. The supply unit 71 supplies the water repellent H to the substrate W in the chamber 3. The water repellent H adheres to the substrate W. On the substrate W, the organic solvent derived from the first gas G1 is replaced by the water repellent H. The water repellent H covers the surface of the substrate W. The water repellent H makes the substrate W water-repellent.

[0160] A part of the water repellent H on the substrate W turns into a water-repellent film. The water-repellent film is formed on the surface of the substrate W. Another part of the water repellent H on the substrate W becomes the unreacted portion of the water repellent H. The unreacted portion of the water repellent H does not react and remains on the substrate W as it is. The unreacted portion of the water repellent H is also called the residual portion of the water repellent H or the excess portion of the water repellent H. Furthermore, another part of the water repellent H on the substrate W may turn into particles. The particles are also called foreign substances. The particles derived from the water repellent H are generated, for example, when the water repellent H comes into contact with the organic solvent. The particles derived from the water repellent H are generated, for example, when the water repellent H comes into contact with the substrate W. Furthermore, the unreacted portion of the water repellent H may become particles derived from the water repellent H.

[0161] Thereafter, the supply unit 71 stops supplying the water repellent H.

[0162] Step S28: Second gas treatment process (first decompression process / first decompression treatment) Refer to FIG. 12(c). The substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 31 supplies a processing gas to the substrate W in the chamber 3. In this specification, the processing gas supplied to the chamber 3 in the second gas processing step is appropriately referred to as the "second gas G2". The substrate W receives the organic solvent derived from the second gas G2. The organic solvent derived from the second gas G2 removes the unreacted water repellent H on the substrate W. The organic solvent derived from the second gas G2 removes the particles derived from the water repellent H on the substrate W. The liquid of the organic solvent derived from the second gas G2 covers the surface of the substrate W. Thereafter, the supply unit 31 stops the supply of the second gas G2.

[0163] Step S29: Spraying step Refer to FIG. 12(d). The substrate W is located at the first position P1. The decompression unit 81 is in operation. The interior of the chamber 3 is maintained in a decompressed state D. The supply unit 41 supplies the mixed gas K to the substrate W in the chamber 3. The substrate W receives the organic solvent of the mixed gas K. The organic solvent of the mixed gas K removes the unreacted water repellent H on the substrate W. The organic solvent of the mixed gas K removes the particles derived from the water repellent H on the substrate W. The liquid of the organic solvent derived from the mixed gas K covers the surface of the substrate W.

[0164] In the spraying step, the elevating mechanism 15 may keep the substrate W stationary at the first position P1. Alternatively, in the spraying step, the elevating mechanism 15 may move the substrate W up and down. For example, the elevating mechanism 15 may move the substrate W up and down near the first position P1. For example, the elevating mechanism 15 may move the substrate W up and down in the vertical direction Z. Alternatively, the elevating mechanism 15 may further include a mechanism (not shown) for rocking the substrate W. The elevating mechanism 15 may rock the substrate W by means of the mechanism. When the substrate W moves up and down or rocks, the entire substrate W preferably receives the mixed gas K. When the substrate W moves up and down or rocks, the organic solvent of the mixed gas K adheres more uniformly to the entire surface of the substrate W.

[0165] Here, the second gas treatment step and the spraying step may be executed in any order. For example, the spraying step may be executed before the second gas treatment step. For example, the spraying step may be executed after the second gas treatment step. For example, the first spraying step may be executed simultaneously with the second gas treatment step.

[0166] The second gas treatment step is an example of the first pressure reduction step in the present invention. The treatment of the second gas treatment step is an example of the first pressure reduction treatment in the present invention. The spraying step is an example of the first pressure reduction step in the present invention. The treatment of the spraying step is an example of the first pressure reduction treatment in the present invention.

[0167] Step S30: First pressurization step (first pressurization treatment) Referring to FIG. 12(e). The first pressurization step of the third embodiment is substantially the same as the first pressurization step of the first embodiment. Briefly, the substrate W is located at the first position P1. The decompression unit 81 stops operating and does not decompress the inside of the chamber 3. The supply unit 41 supplies the mixed gas K to the substrate W in the chamber 3. As a result, the inside of the chamber 3 is pressurized from the decompressed state D to the normal pressure state J. The atmosphere in the chamber 3 contains the organic solvent of the mixed gas K. The substrate W receives the organic solvent of the mixed gas K. Therefore, the substrate W is not dried.

[0168] In the first pressurization step, the elevating mechanism 15 may keep the substrate W stationary at the first position P1. Alternatively, in the first pressurization step, the elevating mechanism 15 may move the substrate W up and down or swing it.

[0169] Step S31: Judgment step Based on the detection result of the pressure sensor 89, the control unit 101 determines whether the inside of the chamber 3 has reached the normal pressure state J. If the control unit 101 does not determine that the inside of the chamber 3 has reached the normal pressure state J, it returns to step S30 and continues the first pressurization step. If the control unit 101 determines that the inside of the chamber 3 has reached the normal pressure state J, the first pressurization step is terminated and the process proceeds to step S32.

[0170] Step S32: First drainage step <first normal pressure step> Refer to Fig. 13(a). The substrate W is located at the first position P1. The supply unit 41 supplies the mixed gas K to the substrate W in the chamber 3. The decompression unit 81 is in a stopped state. The inside of the chamber 3 is maintained at the normal pressure state J. The atmosphere in the chamber 3 contains the organic solvent of the mixed gas K. The drainage unit 95 discharges the first liquid L1 in the chamber 3 to the outside of the chamber 3. Specifically, the drain valve 97 opens the pipe 99 to the atmosphere outside the chamber 3. The first liquid L1 accumulated at the bottom of the chamber 3 is discharged to the outside of the chamber 3 through the pipe 99. In this way, the first liquid L1 flows from the inside of the chamber 3 to the outside of the chamber 3 through the pipe 99.

[0171] The first drainage step of the third embodiment is included in the first normal pressure step of the present invention.

[0172] Step S33: Second supply step <First normal pressure step> Refer to Fig. 13(b). The substrate W is located at the first position P1. The supply unit 41 supplies the mixed gas K to the substrate W in the chamber 3. The decompression unit 81 is in a stopped state. The inside of the chamber 3 is maintained at the normal pressure state J. The atmosphere in the chamber contains the organic solvent of the mixed gas K. The dump valve 92 is closed. The supply unit 61 supplies the second liquid L2 to the treatment tank 11. The treatment tank 11 stores the second liquid L2.

[0173] The second supply step is an example of the supply step in the present invention. The second supply step is included in the first normal pressure step of the present invention.

[0174] Step S34: Second immersion step <First normal pressure step> Refer to FIG. 13(c). The supply unit 41 supplies the mixed gas K to the substrate W in the chamber 3. The decompression unit 81 is in a stopped state. The inside of the chamber 3 is maintained at the normal pressure state J. The atmosphere in the chamber 3 contains the organic solvent of the mixed gas K. The elevating mechanism 15 moves the substrate W from the first position P1 to the second position P2. The substrate W is immersed in the second liquid L2 in the processing tank 11. The second liquid L2 cleans the substrate W. For example, the second liquid L2 removes the unreacted water repellent H on the substrate W. For example, the second liquid L2 removes the particles derived from the water repellent H on the substrate W.

[0175] The liquid discharge unit 95 discharges the second liquid L2 in the chamber 3 to the outside of the chamber 3. The liquid discharge unit 95 discharges the second liquid L2 that has overflowed from the processing tank 11 to the outside of the chamber 3. Specifically, the supply unit 61 continues to supply the second liquid L2 to the processing tank 11. The dump valve 92 is closed. The second liquid L2 overflows from the opening 12a of the processing tank 11. When the second liquid L2 overflows from the processing tank 11, the water repellent H removed from the substrate W also overflows from the processing tank 11. When the second liquid L2 overflows from the processing tank 11, the particles derived from the water repellent H removed from the substrate W also overflows from the processing tank 11. The second liquid L2 that has overflowed from the processing tank 11 accumulates at the bottom of the chamber 3. The drain valve 97 is open. The pipe 99 is open to the atmosphere outside the chamber 3. The second liquid L2 accumulated at the bottom of the chamber 3 flows out of the chamber 3 through the pipe 99.

[0176] The second immersion step of the third embodiment is included in the first normal pressure step of the present invention.

[0177] Step S35: Atmosphere formation step Refer to Fig. 13(d). The substrate W is located at the second position P2 and is immersed in the second liquid L2 in the processing tank 11. The supply unit 61 stops the supply of the second liquid L2. The drain valve 97 closes. The supply unit 41 stops the supply of the mixed gas K. The supply unit 31 supplies the processing gas into the chamber 3. In this specification, the processing gas supplied to the chamber 3 after the second immersion step is appropriately referred to as the "third gas G3". The decompression unit 81 starts operating. The inside of the chamber 3 changes from the normal pressure state J to the decompressed state D. The atmosphere of the third gas G3 is formed in the chamber 3.

[0178] Step S36: Third gas treatment step Refer to Fig. 13(e). The supply unit 31 supplies the third gas G3 into the chamber 3. The decompression unit 81 is operating. The inside of the chamber 3 is maintained in the decompressed state D. The lifting mechanism 15 moves the substrate W from the second position P2 to the first position P1. The substrate W is lifted from the second liquid L2 in the processing tank 11. The supply unit 31 supplies the third gas G3 to the substrate W. The substrate W receives the organic solvent derived from the third gas G3. The organic solvent derived from the third gas G3 removes the second liquid L2 on the substrate W. The liquid of the organic solvent derived from the third gas G3 covers the surface of the substrate W.

[0179] Step S37: Drying step Refer to Fig. 14(a). The substrate W is located at the first position P1. The decompression unit 81 is operating. The inside of the chamber 3 is maintained in the decompressed state D. The supply unit 31 stops the supply of the third gas G3. The supply unit 21 supplies the inert gas N. The inert gas N removes the organic solvent on the substrate W. The substrate W is dried.

[0180] Step S38: Second pressurization step Refer to Fig. 14(b). The substrate W is located at the first position P1. The supply unit 21 supplies the inert gas N. The decompression unit 81 stops operating. The inside of the chamber 3 is pressurized from the decompressed state D to the normal pressure state J.

[0181] <3-3. Effects of the third embodiment> According to the third embodiment, the same effects as those of the first embodiment are achieved. For example, also by the substrate processing method of the third embodiment, the inside of the chamber 3 can be appropriately pressurized from the reduced-pressure state D to the normal-pressure state J. Further, according to the third embodiment, the following effects are achieved.

[0182] The first gas treatment step (S25) is an example of the first pressure reduction step in the present invention as described above. In the first gas treatment step, in the state D where the inside of the chamber 3 is reduced in pressure, the substrate W is pulled up from above the treatment tank 11 from the first liquid L1. Therefore, until the substrate W is pulled up from the first liquid L1 in the treatment tank 11 in the first gas treatment step, the treatment tank 11 stores the first liquid L1. Here, when the substrate W is pulled up from the first liquid L1 in the treatment tank 11 in the first gas treatment step, the inside of the chamber 3 is already in the reduced-pressure state D. The treatment tank 11 stores the first liquid L1 until the inside of the chamber 3 reaches the reduced-pressure state D. As long as the inside of the chamber 3 is in the reduced-pressure state D, it is difficult to discharge the first liquid L1 from the inside of the chamber 3 to the outside of the chamber 3. However, the first pressurization step is executed after the first gas treatment step and before the first liquid discharge step. Therefore, it is easy to execute the first liquid discharge step. Thus, when the treatment tank 11 stores the first liquid L1 until the inside of the chamber 3 reaches the reduced-pressure state D, the first pressurization step is extremely useful.

[0183] The substrate processing method includes an atmosphere forming step in step S24. Here, the atmosphere forming step in step S24 is referred to as the first atmosphere forming step. The first atmosphere forming step is executed before the first gas treatment step (S25). In the first atmosphere forming step, the substrate W is immersed in the first liquid L1, and an atmosphere of the first gas G1 is formed in the chamber 3. Therefore, in the first gas treatment step, the substrate W is exposed to the atmosphere of the first gas G1 from the time when the substrate W is pulled up from the first liquid L1 in the treatment tank 11. Thus, the quality of the substrate processing in the first gas treatment step is suitably improved.

[0184] The substrate processing method includes a second supply step (S33). The second supply step is executed after the first drainage step. In the second supply step, the inside of chamber 3 is maintained at normal pressure state J, and the second liquid L2 is supplied to the treatment tank 11. Therefore, after the first liquid L1 in chamber 3 is discharged outside chamber 3, the second liquid L2 is supplied to the treatment tank 11. Thus, it is easy to supply the second liquid L2 to the treatment tank 11 in the second supply step. Furthermore, in the second supply step, the inside of chamber 3 is at normal pressure. Thus, it is even easier to supply the second liquid L2 to the treatment tank 11 in the second supply step. As a result, it is easy to store the second liquid L2 in the treatment tank 11 in the second supply step. By combining the first drainage step and the second supply step, it is easy to replace the first liquid L1 with the second liquid L2 in the treatment tank 11.

[0185] After the first pressurization step (S30), a second immersion step (S34) is executed. In the second immersion step, the substrate W is immersed in the second liquid L2 of the treatment tank 11. From the first pressurization step until the substrate W is immersed in the second liquid L2 of the treatment tank 11, the mixed gas K is further supplied to the substrate W in chamber 3. Therefore, from the first pressurization step until the substrate W is immersed in the second liquid L2 in the treatment tank 11, the atmosphere in chamber 3 preferably contains an organic solvent. Thus, before the second immersion step after the first depressurization step, the substrate W is not dried. Therefore, in the second immersion step, the substrate W is processed with appropriate quality.

[0186] In the second immersion step, furthermore, the second liquid L2 is discharged outside chamber 3. In the second immersion step, the inside of chamber 3 is at normal pressure state J. Thus, in the second immersion step, it is easy to discharge the second liquid L2 in chamber 3 outside chamber 3.

[0187] In the second immersion step, the second liquid L2 overflows from the treatment tank 11, and the second liquid L2 that has overflowed from the treatment tank 11 is discharged outside chamber 3. Therefore, in the second immersion step, it is easy to keep the second liquid L2 in the treatment tank 11 clean. Thus, the quality of substrate processing in the second immersion step is preferably improved.

[0188] In the second immersion step, the pipe 99 is opened to the atmosphere outside the chamber 3. The pipe 99 is communicatively connected to the chamber 3. As described above, in the second immersion step, the inside of the chamber 3 is in the normal pressure state J. Therefore, in the second immersion step, due to the self-weight of the second liquid L2, the second liquid L2 flows from the inside of the chamber 3 to the outside of the chamber 3 through the pipe 99. In the second immersion step, the second liquid L2 naturally flows from the inside of the chamber 3 to the outside of the chamber 3 through the pipe 99. In the second immersion step, it is not necessary to forcibly send the second liquid L2 from the inside of the chamber 3 to the outside of the chamber 3. Therefore, in the second immersion step, it is easy to discharge the second liquid L2 in the chamber 3 to the outside of the chamber 3 through the pipe 99.

[0189] The present invention is not limited to the first to third embodiments, and can be modified as follows.

[0190] (1) In the first and third embodiments, the mixed gas K contains a liquid of an organic solvent. In the second embodiment, the mixed gas K contains a gas of an organic solvent. However, it is not limited thereto. The mixed gas K may contain at least one of a gas of an organic solvent and a liquid of an organic solvent. Also according to this modified embodiment, the organic solvent derived from the mixed gas K preferably wets the substrate W. Therefore, the mixed gas K preferably prevents the substrate W from being dried.

[0191] (2) In the first to third embodiments, the mixed gas K contains an organic solvent. Here, the organic solvent contained in the mixed gas K may be a diluted organic solvent. For example, the organic solvent contained in the mixed gas K is an organic solvent diluted with pure water.

[0192] Alternatively, the organic solvent contained in the mixed gas K may be an undiluted organic solvent. For example, the organic solvent contained in the mixed gas K consists essentially of only the liquid of the organic solvent. For example, the organic solvent contained in the mixed gas K is the stock solution of the organic solvent. For example, the organic solvent contained in the mixed gas K contains substantially no water.

[0193] (3) In the first to third embodiments, the period during which the mixed gas K is supplied into the chamber 3 is exemplified. However, the present invention is not limited thereto. The period during which the mixed gas K is supplied into the chamber 3 may be changed.

[0194] In the first embodiment, from the first pressurization step (S3) to the second depressurization step (S6), the mixed gas K was supplied into the chamber 3. However, the present invention is not limited thereto. For example, from the first pressurization step until the substrate W is immersed in the second liquid L2 in the processing tank 11, the mixed gas K may be supplied into the chamber 3. After the substrate W is immersed in the second liquid L2 in the processing tank 11, the supply of the mixed gas K may be stopped. According to this modified embodiment, from the first pressurization step until the substrate W is immersed in the second liquid L2 in the processing tank 11, the atmosphere in the chamber 3 preferably contains the organic solvent of the mixed gas K.

[0195] In the second immersion step (S14) of the second embodiment, the mixed gas K was not supplied into the chamber 3. However, the present invention is not limited thereto. For example, in the second immersion step (S14), the mixed gas K may be supplied into the chamber 3. According to this modified embodiment, from the first pressurization step until the substrate W is immersed in the second liquid L2 in the processing tank 11, the atmosphere in the chamber 3 preferably contains the organic solvent of the mixed gas K.

[0196] Alternatively, from the first pressurization step (S12) until the substrate W is immersed in the second liquid L2 in the processing tank 11, the mixed gas K may be supplied into the chamber 3. After the substrate W is immersed in the second liquid L2 in the processing tank 11, the supply of the mixed gas K may be stopped. Also according to this modified embodiment, from the first pressurization step until the substrate W is immersed in the second liquid L2 in the processing tank 11, the atmosphere in the chamber 3 preferably contains the organic solvent of the mixed gas K.

[0197] In the third embodiment, the mixed gas K was supplied into the chamber 3 from the first pressurization step (S30) to the second immersion step (S34). However, it is not limited thereto. For example, the mixed gas K may be supplied into the chamber 3 from the first pressurization step until the substrate W is immersed in the second liquid L2 in the processing tank 11. After the substrate W is immersed in the second liquid L2 in the processing tank 11, the supply of the mixed gas K may be stopped. According to this modified embodiment, from the first pressurization step until the substrate W is immersed in the second liquid L2 in the processing tank 11, the atmosphere in the chamber 3 preferably contains the organic solvent of the mixed gas K.

[0198] Alternatively, after the first pressurization step, the supply of the mixed gas K is stopped. That is, in the first drainage step (S32), the second supply step (S33), and the second immersion step (S34), the mixed gas K is not supplied into the chamber 3. Also according to this modified embodiment, from the first pressurization step to the second immersion step, the atmosphere in the chamber 3 preferably contains the organic solvent of the mixed gas K. In the case of this modified embodiment, in the first pressurization step, the atmosphere of the mixed gas K is formed in the chamber 3. In the first drainage step, the second supply step, and the second immersion step, the inside of the chamber 3 is not depressurized. Therefore, after the first pressurization step and until the second immersion step, the atmosphere of the mixed gas K remains in the chamber 3. Thus, also according to this modified embodiment, from the first pressurization step to the second immersion step, the atmosphere in the chamber 3 preferably contains the organic solvent of the mixed gas K.

[0199] (4) In the first embodiment, the pipe 96 of the drainage unit 95 is communicatively connected to the processing tank 11. In the first drainage step (S5) of the first embodiment, the first liquid L1 in the processing tank 11 is discharged outside the chamber 3 through the pipe 96. However, it is not limited thereto. For example, the pipe 96 may be communicatively connected to the chamber 3. For example, the pipe 96 may be changed to a configuration similar to the pipe 99 of the third embodiment. For example, in the first drainage step of the first embodiment, the first liquid L1 accumulated in the chamber 3 may be discharged outside the chamber 3 through the pipe 96.

[0200] (5) In the third embodiment, the pipe 99 of the drainage unit 95 is communicatively connected to the chamber 3. In the first drainage step (S32) of the third embodiment, the first liquid L1 accumulated in the chamber 3 is discharged outside the chamber 3 through the pipe 99. In the second immersion step (S34) of the third embodiment, the second liquid L2 accumulated in the chamber 3 is discharged outside the chamber 3 through the pipe 99. However, it is not limited thereto. For example, the pipe 99 may be communicatively connected to the treatment tank 11. For example, the pipe 99 may be modified to a configuration similar to the pipe 96 of the first embodiment. For example, in the first drainage step of the third embodiment, the first liquid L1 in the treatment tank 11 may be discharged outside the chamber 3 through the pipe 99. For example, in the second immersion step of the third embodiment, the second liquid L2 in the treatment tank 11 may be discharged outside the chamber 3 through the pipe 99.

[0201] (6) In the first and third embodiments, the rinse liquid and pure water are exemplified as the first liquid L1 supplied to the treatment tank 11. However, it is not limited thereto. For example, the first liquid L1 may be a diluted organic solvent. For example, the first liquid L1 may be an organic solvent diluted with pure water.

[0202] (7) In the first to third embodiments, the diluted organic solvent is exemplified as the second liquid L2 supplied to the treatment tank 11. However, it is not limited thereto. For example, the second liquid L2 may be a rinse. For example, the second liquid L2 may be pure water.

[0203] (8) In the first to third embodiments, the configurations of the supply units 21, 31, 41, 61, and 71 are exemplified. However, it is not limited thereto. The configurations of the supply units 21, 31, 41, 61, and 71 may be appropriately modified.

[0204] In the first to third embodiments, the inert gas N, the first gas G1, the mixed gas K, and the water repellent H are discharged from different discharge parts 22, 32, 42, 52, and 72. However, it is not limited thereto. At least two of the inert gas N, the first gas G1, the mixed gas K, and the water repellent H may be discharged from the same discharge part.

[0205] The supply unit 61 supplied the generated second liquid L2 to the treatment tank 11. However, it is not limited to this. The supply unit 61 may generate the second liquid L2 in the treatment tank 11. For example, the supply unit 61 may supply an undiluted organic solvent and pure water to the treatment tank 11 individually.

[0206] In the spraying step (S29) of the third embodiment, the mixed gas K was sprayed onto the substrate W in the chamber 3. However, it is not limited to this. For example, in the spraying step, the third liquid may be sprayed onto the substrate W in the chamber 3. For example, in the spraying step, the third liquid may be sprayed without an inert gas. For example, in the spraying step, the third liquid may be sprayed by a shower head nozzle. Here, the third liquid includes, for example, a liquid of an organic solvent.

[0207] (9) Regarding the first to third embodiments and each modified embodiment described in the above (1) to (8), each configuration may be appropriately changed by substituting or combining each configuration with the configuration of another modified embodiment.

Explanation of Reference Numerals

[0208] 1... Substrate processing apparatus 3... Chamber 11... Treatment tank 31... Supply unit (first supply unit) 41... Supply unit (second supply unit) 42... Discharge unit (first discharge unit) 52... Discharge unit (first discharge unit) 61... Supply unit 81... Pressure reducing unit 89... Pressure sensor 95... Drainage unit 96... Pipe (drainage pipe) 99... Pipe (drainage pipe) 101... Control unit D... Reduced pressure state G1... First gas G2... Second gas J... Normal pressure state K … Mixed gas L1 … First liquid L2 … Second liquid P1 … First position P2 … Second position W … Substrate

Claims

1. A substrate processing method for processing a plurality of substrates accommodated in one chamber at a time, comprising: a first depressurization step of supplying a first gas containing an organic solvent to the substrate in the chamber while the inside of the chamber is in a depressurized state; a first pressurization step of supplying a mixed gas containing an organic solvent and an inert gas to the substrate in the chamber after the first depressurization step and pressurizing the inside of the chamber from the depressurized state to the normal pressure state; a first normal pressure step of maintaining the inside of the chamber at the normal pressure state and performing at least one of drainage treatment and substrate processing after the first pressurization step; and a substrate processing method.

2. The substrate processing method according to claim 1, wherein the mixed gas contains at least one of a gas of the organic solvent and a liquid of the organic solvent. a substrate processing method.

3. In the substrate processing method according to claim 1 or 2, in the first pressurization step, the mixed gas is generated and the generated mixed gas is supplied into the chamber by a first discharge portion. a substrate processing method.

4. In the substrate processing method according to any one of claims 1 to 3, in the first pressurization step, the substrate is further moved up and down or swung in the chamber. a substrate processing method.

5. The substrate processing method according to any one of claims 1 to 4, further comprising: a first immersion step of immersing the substrate in a first liquid stored in a processing tank installed in the chamber before the first depressurization step; and the first normal pressure step further includes a first drainage step of discharging the first liquid outside the chamber. and a substrate processing method.

6. The substrate processing method according to claim 5, wherein in the first drainage step, a drain pipe connected to either the chamber or the processing tank is opened to the atmosphere outside the chamber, and the first liquid is discharged outside the chamber through the drain pipe. a substrate processing method.

7. The substrate processing method according to claim 5 or 6, wherein in the first depressurization step, the substrate is pulled up from the first liquid above the processing tank while the inside of the chamber is in a depressurized state. a substrate processing method.

8. In the substrate processing method according to claim 7, further comprising: a first atmosphere forming step of forming an atmosphere of the first gas in the chamber in a state where the substrate is immersed in the first liquid before the first depressurization step. and a substrate processing method.

9. The substrate processing method according to any one of claims 5 to 8, wherein the first normal pressure step is after the first liquid discharge step, a supply step of supplying a second liquid to the processing tank, further comprising a substrate processing method.

10. The substrate processing method according to claim 9, wherein the first normal pressure step is a second immersion step of immersing the substrate in the second liquid stored in the processing tank, further comprising a substrate processing method.

11. The substrate processing method according to claim 10, wherein from the first pressurization step until the substrate is immersed in the second liquid, the atmosphere in the chamber contains an organic solvent. a substrate processing method.

12. The substrate processing method according to claim 11, wherein from the first pressurization step until the substrate is immersed in the second liquid, the mixed gas is further supplied to the substrate in the chamber. a substrate processing method.

13. The substrate processing method according to any one of claims 10 to 12, wherein in the second immersion step, the second liquid is further discharged outside the chamber. a substrate processing method.

14. The substrate processing method according to any one of claims 1 to 4, wherein the first normal pressure step is a second immersion step of immersing the substrate in the second liquid stored in the processing tank installed in the chamber, further comprising a substrate processing method.

15. The substrate processing method according to claim 14, wherein in the second immersion step, the second liquid is further discharged outside the chamber. a substrate processing method.

16. The substrate processing method according to claim 15, wherein in the second immersion step, the second liquid overflows from the processing tank, and the second liquid overflowing from the processing tank is discharged outside the chamber. a substrate processing method.

17. The substrate processing method according to claim 15 or 16, wherein in the second immersion step, a drain pipe connected to either the chamber or the processing tank is opened to the atmosphere outside the chamber, and the second liquid is discharged outside the chamber through the drain pipe. a substrate processing method.

18. The substrate processing method according to any one of claims 1 to 4, wherein after the first normal pressure step, in a state where the inside of the chamber is depressurized, a second depressurization step of immersing the substrate in the second liquid stored in the processing tank installed in the chamber, further comprising a substrate processing method.

19. The substrate processing method according to claim 18, wherein Until the substrate is immersed in the second liquid from the first pressurization step, the atmosphere in the chamber contains an organic solvent. Substrate processing method.

20. A chamber for accommodating a plurality of substrates; A decompression unit for decompressing the interior of the chamber; A first supply unit for supplying a first gas containing an organic solvent to the substrate in the chamber; A second supply unit for supplying a mixed gas containing an organic solvent and an inert gas to the substrate in the chamber; A control unit for controlling the decompression unit, the first supply unit, and the second supply unit to perform a first decompression process and a first pressurization process; Comprising: In the first decompression process, the decompression unit decompresses the interior of the chamber, and the first supply unit supplies the first gas to the substrate; In the first pressurization process, the decompression unit does not decompress the interior of the chamber, and the second supply unit supplies the mixed gas to the substrate. Substrate processing apparatus.

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