Temperature sensor, temperature detection device, temperature detection method, temperature detection program, and method for manufacturing a temperature sensor

Abstract

To improve a spatial resolution in temperature detection.SOLUTION: A temperature detection device 1 includes a temperature sensor 2. The temperature sensor 2 includes a light-emitting material 24 emitting light by reception of excitation energy and having an emission spectrum changing depending on a temperature, and a base material 23 to which the light-emitting material 24 is introduced. When viewed from a detection direction where the temperature is detected, a region where the light-emitting material 24 is introduced in the base material 23 is configured as a plurality of light-emitting regions 25 which is disposed apart from each other. In addition, the temperature detection device 1 includes a light detection unit 31 that detects light from the light-emitting material 24, and a control unit 32 functioning as a temperature detection unit that detects the temperature on the basis of the detected light.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a temperature sensor, a temperature detection device, a temperature detection method, a temperature detection program, and a method for manufacturing a temperature sensor that detect temperature by using light of an element that emits light upon receiving excitation energy.

Background Art

[0002] Conventionally, a temperature measurement device has been proposed that uses a temperature sensor made of a chloride phosphor containing chloride as a matrix and erbium ions or thulium ions as an activator, excites the temperature sensor with excitation light, detects the fluorescence spectrum generated by the excitation of the temperature sensor, and calculates the temperature from the detected spectrum (see Patent Document 1). In manufacturing such a temperature sensor, as a method for introducing a luminescent substance into a crystal, there is a vapor phase growth method in which the luminescent substance is introduced during crystal growth.

[0003] However, in the vapor phase growth method, since the luminescent substance is evenly dispersed and arranged in the crystal, the installation position of the luminescent substance cannot be controlled. For this reason, in the background art, it is not possible to locally arrange the luminescent substance and detect the temperature of a fine region, and there is a problem in the spatial resolution in temperature detection.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In view of the above-described problems, an object of the present invention is to provide a temperature sensor, a temperature detection device, a temperature detection method, a temperature detection program, and a method for manufacturing a temperature sensor that can improve the spatial resolution in temperature detection.

Means for Solving the Problems

[0006] The present invention relates to a temperature sensor, a temperature detection device, a temperature detection method, a temperature detection program, and a method for manufacturing a temperature sensor, which include a luminescent material that emits light upon receiving excitation energy and whose emission varies with temperature, and a base material into which the luminescent material is introduced. The region in the base material where the luminescent material is introduced is configured as a plurality of light-emitting regions that are spaced apart from each other when viewed from the detection direction for detecting temperature.

Effects of the Invention

[0007] According to the present invention, it is possible to provide a temperature sensor, a temperature detection device, a temperature detection method, a temperature detection program, and a method for manufacturing a temperature sensor that can improve the spatial resolution in temperature detection.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3A

Figure 3B

Figure 3C

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Embodiments for Carrying Out the Invention

[0009] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

Examples

[0010] FIG. 1 is a block diagram showing the configuration of the temperature detection device 1. FIG. 2 is a diagram showing the configuration of the sensor unit 22 of Example 1.

[0011] The temperature detection device 1 includes a temperature sensor 2 that emits light, a light receiving unit 3 that receives the light from the temperature sensor 2, and an optical path 4. The optical path 4 is constituted by an optical fiber or the like, connects the temperature sensor 2 and the light receiving unit 3, and guides the light from the temperature sensor 2 to the light receiving unit 3.

[0012] The temperature sensor 2 includes an excitation unit 21 and a sensor unit 22. As shown in FIG. 2, the sensor unit 22 includes a base material 23 and a light emitting substance 24 that is doped (introduced) at a predetermined position within the base material 23.

[0013] The base material 23 is made of a material that does not emit light even when receiving excitation energy, or does not emit light in a predetermined wavelength band including the emission peak in the emission spectrum of the luminescent material 24 even if it emits light. For example, the base material 23 is composed of a semiconductor material, a ceramic material, a metal material, wood, etc. The base material 23 preferably has a thermal conductivity of 0.25 W / (cm·K) (300K) or more, more preferably 0.5 W / (cm·K) (300K) or more, and suitably 1.8 W / (cm·K) (300K) or more. The thickness of the base material 23 (the thickness from the surface where the luminescent material 24 is provided to the back surface) is preferably as thin as possible in order to reduce the heat capacity of the sensor unit 22 and make the sensor unit 22 as small as possible from the viewpoint of improving the spatial resolution in temperature detection. Specifically, the thickness of the luminescent material-added semiconductor 23 is 500 nm or less, preferably 50 nm or less, and more preferably 1 nm to 10 nm. Thereby, the heat on the back surface side can be quickly and sufficiently transmitted to the luminescent material 24 on the front surface side, and the temperature on the back surface side can be appropriately measured.

[0014] When using a semiconductor material as the base material 23, for example, gallium nitride, gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, indium phosphide, silicon germanium, silicon, silicon carbide, aluminum nitride, aluminum gallium nitride, zinc oxide, indium nitride, indium gallium nitride, boron nitride, diamond, etc. can be used. In particular, from the viewpoint of the ease of emission of the luminescent material 24 introduced into the base material, it is preferable to use gallium nitride, aluminum nitride, or aluminum gallium nitride as the base material of the luminescent material-added semiconductor 23. When using current as the excitation energy for the base material 23 (exciting the luminescent material 24 by current injection), the sensor unit 22 is configured as a vertical pn junction diode, a vertical Schottky barrier diode, a lateral pn junction diode, a lateral Schottky barrier diode, or a high electron mobility transistor (HEMT), etc.

[0015] The luminescent substance 24 emits light by receiving excitation energy and is composed of an element whose luminescence changes with temperature. That is, the emission spectrum of the luminescent substance 24 changes with temperature.

[0016] For example, the luminescent substance 24 is a rare earth element and is one or more selected from praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium.

[0017] FIG. 3A is a diagram showing an example of an excitation method using excitation light. FIG. 3B is a diagram showing an example of an excitation method using current. FIG. 3C is a diagram showing an example of an excitation method using an electron beam.

[0018] The excitation unit 21 functions as an excitation energy imparting means for imparting excitation energy to the sensor unit 22 (luminescent substance 24) and excites the luminescent substance 24. Examples of methods for imparting excitation energy to the luminescent substance 24 include a method using excitation light (photoluminescence), a method using current injection (electroluminescence), a method of colliding electrons (cathodoluminescence), and the like.

[0019] As shown in FIG. 3A, in photoluminescence, excitation light is irradiated onto the luminescent material 24. For example, the luminescent material 24 can be directly excited by irradiating the luminescent material 24 with resonance excitation light corresponding to the resonance excitation conditions of the luminescent material 24 as the excitation light. Further, when the base material 23 is a semiconductor material, light having a predetermined energy is used as the excitation light to irradiate the luminescent material 24 and the surrounding base material 23, and the luminescent material 24 is indirectly excited (indirect excitation) by the recombination energy of electron-hole pairs or the collision of hot carriers in the base material 23 (semiconductor material). When there are a plurality of resonance excitation conditions for the luminescent material 24, a plurality of types of resonance excitation light may be used as the excitation light. Further, the light irradiated when the base material 23 is a semiconductor material is preferably light having an energy exceeding the band gap of the base material 23 (for example, ultraviolet light). When using photoluminescence, the excitation unit 21 has a light source for irradiating excitation light and functions as an excitation light irradiation unit.

[0020] As shown in FIG. 3B, in electroluminescence, the base material 23 is made of a semiconductor material, and a pair of electrodes are provided on the surface of the base material 23. When a predetermined voltage (forward bias) is applied to the electrodes, a current flows in the base material 23. At this time, when a current flows in the base material 23, recombination energy of electron-hole pairs is generated in the base material 23. Therefore, the luminescent material 24 is excited by indirect excitation in the same manner as in photoluminescence by ultraviolet light. When using electroluminescence, the excitation unit 21 is connected to a power source such as a commercial power source or a battery and functions as a voltage application unit that applies a predetermined voltage (voltage for temperature detection) to the sensor unit 22.

[0021] As shown in Fig. 3C, in the case of cathode luminescence, an electron beam (electron ray) accelerated from several kV to several tens of kV is irradiated onto the luminescent material 24. In this case, the luminescent material 24 can be directly excited by the collision of electrons, or when the base material 23 is a semiconductor material, the luminescent material 24 can also be indirectly excited by the recombination energy of electron-hole pairs or the collision of hot carriers. When using cathode luminescence, the excitation unit 21 has an electron gun or the like and functions as an electron beam irradiation unit for irradiating an electron beam.

[0022] The minimum range (spatial resolution) in which temperature can be detected by photoluminescence and electroluminescence is defined by the resolution of the optical system (light receiving unit 3 and light guiding path 4) for detecting the luminescence of the luminescent material 24. The resolution of a general-purpose optical system in this field depends on the excitation light wavelength and the emission wavelength of the luminescent material, but is about 200 nm, and when using a super-resolution microscope or the like, it is about 50 nm.

[0023] The spatial resolution of temperature detection in cathode luminescence is defined by factors such as the outer diameter dimension of the electron beam and the spatial spread of the energy imparted by the electron beam. That is, it is defined by the size of the smallest region excited in cathode luminescence. The size of the smallest region excited in cathode luminescence is about 10 nm.

[0024] Returning to Fig. 2, the sensor unit 22 has a plurality of regions (light emitting regions) 25 into which the luminescent material 24 is introduced and arranged at intervals from each other, and a region (non-light emitting region) 26 into which the luminescent material 24 is not introduced, when viewed from the detection direction for detecting temperature. In this embodiment, when the sensor unit 22 is viewed from the detection direction, all regions other than the light emitting region 25 are non-light emitting regions 26.

[0025] The shape of the light emitting region 25 when viewed from the detection direction is not particularly limited and can be a rectangular shape, a circular shape, or the like. However, the shape of the light emitting region 25 when viewed from the detection direction is preferably an isotropic shape such as a perfect circular shape or a regular polygonal shape.

[0026] In addition, the size of the light-emitting region 25 when viewed from the detection direction may be 200 nm × 200 nm or smaller than a diameter of 200 nm, preferably 50 nm × 50 nm or a diameter of 50 nm, and more preferably 10 nm × 10 nm or a diameter of 10 nm or less.

[0027] As described above, the spatial resolution (observation region) of temperature detection by cathodoluminescence is about 10 nm. Therefore, when using cathodoluminescence, even if the size of the light-emitting region 25 is about 10 nm × 10 nm or a diameter of about 10 nm, one light-emitting region 25 can be detected individually.

[0028] Regarding the ease of light detection, when the light-emitting region is larger than the observation region, it is determined by the number of luminescent substances in the observation region (observation region volume × luminescent substance concentration), and when the light-emitting region is smaller than the observation region, it is determined by the number of luminescent substances in the light-emitting region (light-emitting region volume × luminescent substance concentration).

[0029] Furthermore, from the viewpoint of spatial resolution, the distance between adjacent light-emitting regions 25 may be set as small as possible according to the size of the minimum observation region for each excitation method. For example, in photoluminescence and electroluminescence, it can be 50 nm or more, and in cathodoluminescence, it can be 10 nm or more. In this way, the distance between the light-emitting regions can be made as short as possible according to the minimum observation region for each excitation method, and as a result, the spatial resolution can be improved. Note that if the distance between the light-emitting regions 25 is made too small and the number of light-emitting regions 25 is increased too much, the ion implantation damage will increase and it will be difficult to repair by heat treatment. Therefore, in order to suppress the performance degradation of the temperature sensor 2, when the distance between the light-emitting regions 25 is set small, that is, as the distance between the light-emitting regions 25 decreases, it is preferable to inject as few luminescent substances as possible. Note that since a non-light-emitting region 26 exists between adjacent light-emitting regions 25, the distance between a plurality of light-emitting regions 25 is also the size (width dimension) of the non-light-emitting region 26.

[0030] As described above, the spatial resolution of temperature detection in cathode luminescence is about 10 nm. Therefore, if cathode luminescence is used, if the distance between adjacent light-emitting regions 25 is 10 nm or more, one light-emitting region 25 can be excited individually (distinguished from other light-emitting regions 25). That is, one light-emitting region 25 can be detected individually. Also, if the distance between adjacent light-emitting regions 25 is 200 nm or more, one light-emitting region 25 can be detected individually even in the case of photoluminescence and electroluminescence.

[0031] The introduction concentration of the luminescent substance 24 in the light-emitting region 25 is in the range of 5×10 13 pieces / cm 3 ~1×10 22 pieces / cm 3 and preferably in the range of 5×10 16 pieces / cm 3 ~4×10 21 pieces / cm 3 .

[0032] A concentration of 5×10 13 pieces / cm 3 is a concentration such that about 1 luminescent substance 24 exists in a region of 200 nm×200 nm×500 nm, and a concentration of 5×10 16 pieces / cm 3 is a concentration such that about 1000 luminescent substances 24 exist in a region of 200 nm×200 nm×500 nm.

[0033] For example, since the emission intensity of one praseodymium is about 100,000 photons per second, if there is one emitting praseodymium, the light from the temperature sensor 2 (sensor unit 22) can be sufficiently detected by a known light detector. Therefore, it is considered that detectable light can be obtained in principle if the concentration is 5×10 13 pieces / cm 3 or more. Also, if the concentration is 5×10 16 pieces / cm 3 or more, the light from the temperature sensor 2 can be detected more reliably.

[0034] Also, 1×1022 per cm 3 The concentration is equivalent to about 10% in atomic concentration and is 4×10 21 per cm 3 The concentration is equivalent to about 4% in atomic concentration. Since the maximum emission intensity of the rare earth element is obtained when it is around about 4% in atomic concentration, as the introduction concentration of the luminescent substance 24 in the light-emitting region 25, it is most preferably 4×10 21 per cm 3 .

[0035] FIG. 4 is a diagram showing a part of the manufacturing method of the sensor unit 22. FIG. 5 is a diagram that is a part of the manufacturing method of the sensor unit 22 and follows FIG. 4. FIG. 6 is a diagram that is a part of the manufacturing method of the sensor unit 22 and follows FIG. 5.

[0036] As a manufacturing method of the sensor unit 22 configured as described above, an ion implantation method can be used. Hereinafter, a manufacturing method of the sensor unit 22 when the base material 23 is gallium nitride and the luminescent substance 24 is praseodymium will be described.

[0037] As shown in FIG. 4, first, a resist film 40 formed of a photosensitive resin or the like is formed on the surface of the base material 23 (resist film forming step). Note that the resist film 40 is formed on at least a portion of the surface of the base material 23 that faces the detection direction (light guide path 4 or light receiving unit 3).

[0038] Next, a plurality of through holes 41 corresponding to each of the plurality of light-emitting regions 25 are formed in the resist film 40 by electron beam lithography (through hole forming step). Note that the size of the through hole 41 corresponds to the size of the light-emitting region 25 described above.

[0039] Next, as shown in FIG. 5, a light-emitting substance 24 is ion-implanted into the base material 23 through the through-hole 41 (ion implantation step). The implantation concentration when ion-implanting the light-emitting substance 24 into the base material 23 corresponds to the introduction concentration of the light-emitting substance 24 in the light-emitting region 25. However, at this stage, since the light-emitting substance 24 implanted into the base material 23 is not ionized (activated), it does not emit light even when excited energy is received.

[0040] Subsequently, the resist film 40 is removed (resist film removal step), and the base material 23 into which the light-emitting substance 24 is implanted is heat-treated (high-temperature treatment) to ionize (oxidize) the light-emitting substance 24 (heat treatment step). The treatment temperature in the heat treatment step is 500°C to 1650°C. Note that the higher the treatment temperature, the more efficiently the light-emitting substance 24 can be ionized. On the other hand, if the treatment temperature is too high, there is a problem that the crystal structure of the base material 23 collapses. As an example of a technique related to heat treatment for recovering such a crystal structure, a technique of making gallium nitride at a high temperature (around 1550°C) and high pressure in a nitrogen gas atmosphere is disclosed in Reference 1 (S. Porowski et al., J. Phys: Condens. Matter 14 (2002) 11097-11110).

[0041] Therefore, as shown in FIG. 6, the heat treatment may be performed after forming a heat treatment protective film 42 that covers the base material 23. In this case, after removing the resist film 40, a heat treatment protective film 42 that covers the base material 23 is formed (protective film forming step), and after heat-treating the base material 23 in a state where the heat treatment protective film 42 is formed, the heat treatment protective film 42 may be removed (protective film removal step). The heat treatment protective film 42 is composed of silicon nitride (SiN), silicon dioxide (SiO2), aluminum nitride (AlN), or the like. Note that a reported example of a heat treatment method using a heat treatment protective film is disclosed in Reference 2 (K. Lorenz, et al., Appl. Phys. Lett. 85 (2004) 2712-2714).

[0042] FIG. 7 is an emission spectrum of trivalent praseodymium, and is a graph showing the emission spectrum at 22.5° C. and the emission spectrum at 50.7° C. FIG. 8 is a graph showing the relationship between the emission intensity ratio and temperature in trivalent praseodymium.

[0043] Among the luminescent materials 24, there are some in which there are two wavelength bands (emission peaks) where the emission intensity becomes high in the emission spectrum. For example, as the ones having two emission peaks, there is trivalent praseodymium and the like. As shown in FIG. 7, in the emission spectrum of trivalent praseodymium, a first emission peak (first peak) exists near 650 nm, and a second emission peak (second peak) exists near 652 nm. In the present embodiment, a wavelength band of 649 nm or more and less than 651 nm (first wavelength band) is defined as the first peak, and a wavelength band of 651 nm or more and less than 653 nm (second wavelength band) is defined as the second peak.

[0044] For both the first peak and the second peak, the emission intensity is higher when the temperature is low (22.5° C.) than when the temperature is high (50.7° C.). However, there is a difference in the amount of change (change rate) of the emission intensity due to the temperature change between the first peak and the second peak. That is, the ratio of the emission intensity (first emission intensity) at the first peak to the emission intensity (second emission intensity) at the second peak (emission intensity ratio) changes according to the temperature.

[0045] Taking praseodymium as an example, as shown in FIG. 8, the emission intensity ratio decreases as the temperature decreases, and the emission intensity ratio increases as the temperature increases. In the present embodiment, the case where the luminescent material 24 is praseodymium is taken as an example for explanation. However, the fact that the emission intensity ratio of the two peaks changes according to the temperature, and the emission intensity ratio decreases as the temperature decreases and the emission intensity ratio increases as the temperature increases is the same for other rare earth elements.

[0046] For example, although illustration is omitted, in the emission spectrum of neodymium, there is a first peak around 865 nm and a second peak around 885 nm. Also, in the emission spectrum of erbium, there is a first peak around 525 nm and a second peak around 550 nm. Further, when neodymium and ytterbium are co-doped, there is a first peak around 950 nm and a second peak around 1050 nm. Regarding other rare earth elements not exemplified here, it is considered that by obtaining the emission spectrum in advance through experiments or the like and setting the first peak and the second peak, the relationship between the emission intensity ratio of the two peaks and the temperature can be clarified.

[0047] Returning to FIG. 1, the light receiving unit 3 includes a light detection unit 31 and a control unit 32. The light detection unit 31 is for detecting light from the sensor unit 22 (light emitting substance 24), and includes a spectroscopic unit 33, a first photodetector 34, and a second photodetector 35. The spectroscopic unit 33 is for splitting the light from the sensor unit 22 (light emitting substance 24) into light in a first wavelength band corresponding to the first peak and light in a second wavelength band corresponding to the second peak. The configuration of the spectroscopic unit 33 is not particularly limited, and a beam splitter, a dichroic mirror, or the like may be used, or it may be configured by a combination of optical elements such as mirrors and an etalon filter and a band-pass filter. Among the light split by the spectroscopic unit 33, the light in the first wavelength band is incident on the first photodetector 34, and the light in the second wavelength band is incident on the second photodetector 35.

[0048] The first photodetector 34 and the second photodetector 35 are for outputting a signal corresponding to the intensity of the incident light to the control unit 32. The configuration of the first photodetector 34 and the second photodetector 35 is not particularly limited, and a photodiode or the like can be used. Also, the first photodetector 34 and the second photodetector 35 may be configured by single photon detectors capable of detecting single photons.

[0049] The control unit 32 has a CPU (Central Processing Unit) and a storage unit (memory) that stores various data. This control unit 32 executes at least temperature detection processing. That is, the control unit 32 functions as a temperature detection unit that detects the light from the light-emitting substance 24 of the sensor unit 22 based on the signal output from the light detection unit 31 and detects (measures) the temperature based on the detected light. Note that the control unit 32 may function as the main control unit of the temperature detection device 1. In this case, the control unit 32 transmits a control signal to each part of the temperature detection device 1 such as the excitation unit 21 and causes the temperature detection device 1 to execute various operations.

[0050] The temperature detection device 1 configured as described above executes temperature detection processing for detecting the temperature at the installation position of the light-emitting substance 24 by using the relationship between the emission intensity ratio of the two peaks of the light-emitting substance 24 and the temperature. In performing the temperature detection processing, temperature detection conditions based on the relationship between the emission intensity ratio of the two peaks of the light-emitting substance 24 to be used and the temperature are created in advance, and the data of these temperature detection conditions is stored in the storage unit of the control unit 32. For example, the emission intensity ratios of the two peaks at various temperatures are obtained through experiments or the like, and an approximate formula showing the relationship between the emission intensity ratio and the temperature based on the experimental results or table data for converting the emission intensity ratio into temperature is created as the temperature detection conditions and stored in the storage unit of the control unit 32.

[0051] FIG. 9 is a flowchart showing the temperature detection processing executed by the control unit 32. First, the excitation unit 21 is controlled to apply excitation energy to the sensor unit 22 (electrode) (step S1). When the excitation energy is applied to the sensor unit 22, the light-emitting substance 24 emits light, and the light of the light-emitting substance 24 enters the light detection unit 31 through the light guide path 4. The emission spectrum of the light from the light-emitting substance 24 at this time is the emission spectrum at the current temperature of the light-emitting substance 24. In this embodiment, the light incident on the light detection unit 31 is split by the spectroscopic unit 33 into light in a first wavelength band incident on the first photodetector 34 and light in a second wavelength band incident on the second photodetector 35.

[0052] Then, from the first photodetector 34, a signal corresponding to the first emission intensity, which is the intensity of light in the first wavelength band, is output, and the control unit 32 detects (acquires) the first emission intensity according to this signal (step S2). Further, from the second photodetector 35, a signal corresponding to the second emission intensity, which is the intensity of light in the second wavelength band, is output, and the control unit 32 acquires the second emission intensity according to this signal (step S3).

[0053] Subsequently, the emission intensity ratio between the first emission intensity and the second emission intensity is calculated (step S4), and according to the detection conditions of the temperature, the temperature of the installation position of the light-emitting substance 24 is detected from the emission intensity ratio (step S5).

[0054] In this way, in this embodiment, the temperature of each of the light-emitting regions 25 (light-emitting substances 24) can be selectively detected individually at the nanoscale (nanometer order). That is, the temperature can be detected at the nanoscale. Therefore, the spatial resolution in the temperature detection process can be improved. Further, since the temperature measurement is performed based on the emission spectrum, if the sensor unit 22 is brought into contact with the temperature measurement target, there is no need to contact other things at the timing of temperature measurement, so the temperature change due to the contact of an object other than the sensor unit 22 during temperature measurement can be prevented and the temperature can be measured.

[0055] Furthermore, as a conventional technique, there is a technique of using silicon vacancies in silicon carbide as a quantum sensor such as a magnetic sensor. In such a conventional technique, the applicable material is only silicon carbide and cannot be applied to other materials. In contrast, this embodiment has the advantage that there are fewer material restrictions on the sensor unit 22 compared to the above conventional technique.

[0056] In addition, in order to measure the temperature based on the emission spectrum of the luminescent material 24 at the current temperature, it is possible to measure the ambient temperature of the site where the sensor unit 22 including the luminescent material 24 is disposed, or to measure the temperature of the object with which the back surface of the base material 23 of the sensor unit 22 is in contact. For example, the temperature of the object on which the back surface of the base material 23 of the sensor unit 22 is installed is transferred from the base material 23 in contact to the luminescent material 24 as heat. Therefore, the temperature of the object with which the base material 23 is in contact can be measured from the emission of the luminescent material 24.

[0057] As a preferable example of the combination of the type of the base material 23 and the type of the luminescent material 24, the base material 23 can be made of gallium nitride, and the luminescent material 24 can be made of praseodymium, particularly trivalent praseodymium. With this combination, since praseodymium is likely to emit light, there is an advantage that light can be easily detected. Further, by using gallium nitride as the base material 23, the compatibility with electronic devices, particularly semiconductor devices, is improved, and furthermore, the luminescent material 24 can be introduced onto an electronic device including gallium nitride to form the sensor unit 22 or the temperature sensor 2. In this way, it is also possible to locally detect the temperature at an arbitrary position on the electronic device, detect the temperatures at a plurality of positions on the electronic device, and detect the temperature distribution in the electronic device.

[0058] In addition, there are some luminescent materials 24 in which the wavelength at which an emission peak appears changes in accordance with a temperature change. For example, in the emission spectrum of neodymium, the emission peak appears around 863 nm, and the wavelength of the emission peak tends to become shorter (shift to a shorter wavelength) as the temperature decreases, and to become longer (shift to a longer wavelength) as the temperature increases. That is, it can be said that there is a relationship between the length of the wavelength at which the emission peak appears and the temperature. By utilizing the relationship between the length of the wavelength at which the emission peak appears and the temperature, the emission spectrum of the luminescent material 24 is detected, and the temperature can be detected according to the length of the wavelength of the emission peak in the emission spectrum. In this case, the wavelength at the reference temperature may be set as the reference wavelength, and the temperature may be detected according to the difference (Δλ) with respect to the reference wavelength.

[0059] Thus, when utilizing the relationship between the wavelength at which the emission peak appears and the temperature, there is no need to spectroscopically analyze the light from the light-emitting substance 24. Therefore, the light detection unit 36 only needs to have one light detection unit 37.

[0060] FIG. 10 is a diagram showing an example of the configuration of the sensor unit 22 as viewed from the detection direction. As shown in FIG. 10, in the sensor unit 22, a plurality of light-emitting regions 25 (light-emitting substance 24) can be arranged, and an object to be temperature-detected, such as a living cell, can be placed on the surface of the base material 23. In this way, by individually detecting the temperature of each light-emitting region 25, the temperature distribution in the object to be temperature-detected can be detected on a nanoscale.

[0061] This invention is not limited to this embodiment and can be implemented in various other embodiments. Also, the specific configurations and the like described in the above embodiment are merely examples, and can be appropriately changed according to the actual product.

[0062] Furthermore, the present invention can be provided not only as a temperature detection device and a temperature sensor, but also as a method, a program, and a storage medium storing the program for detecting light from a light-emitting substance using a temperature sensor and detecting the temperature based on the detected light, and also as a method for manufacturing a temperature sensor using an ion implantation method.

Industrial Applicability

[0063] This invention can be used in industries that detect temperature by utilizing the light of an element that emits light upon receiving excitation energy.

Explanation of Reference Numerals

[0064] 1... Temperature detection device 2... Temperature sensor 3... Light receiving unit 21... Excitation unit 22... Sensor unit 23... Base material 24... Light-emitting substance 25…Light-emitting region 31…Light detection unit 32…Control unit (temperature detection unit) 40…Resist film 41…Through hole

Claims

1. A luminescent substance that emits light upon receiving excitation energy and whose emission varies with temperature, and a base material into which the luminescent substance is introduced, the region in the base material where the luminescent substance is introduced is configured as a plurality of luminescent regions arranged at intervals when viewed from the detection direction for detecting temperature, the size of each of the plurality of luminescent regions is 200 nm × 200 nm or less or has a diameter of less than 200 nm when viewed from the detection direction, the base material is made of a semiconductor material, a ceramic material, a metal material, or wood A temperature sensor.

2. A luminescent substance that emits light upon receiving excitation energy and whose emission varies with temperature, and a base material into which the luminescent substance is introduced, the region in the base material where the luminescent substance is introduced is configured as a plurality of luminescent regions arranged at intervals when viewed from the detection direction for detecting temperature, the size of each of the plurality of luminescent regions is 200 nm × 200 nm or less or has a diameter of less than 200 nm when viewed from the detection direction, the luminescent substance is introduced into the base material in an ionized state A temperature sensor.

3. the size of each of the plurality of luminescent regions is 10 nm × 10 nm or more when viewed from the detection direction, the distance between the plurality of luminescent regions is 10 nm or more The temperature sensor according to claim 1 or 2.

4. The temperature sensor according to any one of claims 1 to 3, and excitation energy applying means for applying excitation energy to the luminescent substance of the temperature sensor, a light detection unit for detecting light from the luminescent substance, A temperature detection device including a temperature detection unit that detects temperature based on the detected light. Temperature detection device.

5. A luminescent substance that emits light upon receiving excitation energy and whose emission varies with temperature, and a base material into which the luminescent substance is introduced. The regions in the base material where the luminescent substance is introduced are configured as a plurality of light-emitting regions arranged at intervals when viewed from the detection direction for detecting temperature. The size of each of the plurality of light-emitting regions is 200 nm × 200 nm or less or less than a diameter of 200 nm when viewed from the detection direction. The base material is made of a semiconductor material, a ceramic material, a metal material, or wood, and is used as a temperature sensor. Detect the light from the luminescent substance. Detect temperature based on the detected light. Temperature detection method.

6. A method for manufacturing a temperature sensor including a luminescent substance that emits light upon receiving excitation energy and whose emission varies with temperature, and a base material into which the luminescent substance is introduced. The regions in the base material where the luminescent substance is introduced are configured as a plurality of light-emitting regions arranged at intervals when viewed from the detection direction for detecting temperature. The method includes: Forming a resist film on the surface of the base material into which the luminescent substance is introduced. Forming through-holes corresponding to the light-emitting regions in the resist film. Ion-implanting the luminescent substance into the base material through the through-holes. Removing the resist film. Forming a heat treatment protective film covering the base material into which the luminescent substance is implanted. Heat-treating the base material on which the heat treatment protective film is formed. After the heat treatment, removing the heat treatment protective film. Method for manufacturing a temperature sensor.

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