Conduit for seamless wire

Abstract

Embodiments of the present disclosure generally relate to an integrated electrical conduit including a center conductor, a socket coupled to a first end of the center conductor, a male insert coupled to a second end of the center conductor, a dielectric sheath surrounding the center conductor, and an outer conductor surrounding the dielectric sheath, the integrated electrical conduit having a substantially 90 degree bend formed along its length.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to apparatuses and methods used in the manufacture of semiconductor devices. More specifically, embodiments of the present disclosure relate to a conduit for an electric wire for supplying power to an electrostatic chuck of a substrate processing chamber.

Background Art

[0002]

[0002] Integrated circuits have evolved into complex devices that can include millions of transistors, capacitors, and resistors on a single chip. The evolution of chip design is accompanied by continuous circuit speed increase and circuit density increase. In accordance with the requirements for circuit speed increase and circuit density increase, there are requirements for the materials used to manufacture the above integrated circuits.

[0003]

[0003] The requirement for high density of integrated circuits also gives rise to requirements for the processes used in the manufacture of integrated circuit components. For example, in a process using an electrostatic chuck, a high-frequency (RF) electrode embedded in the electrostatic chuck is included to facilitate plasma generation in the chamber, and a conductor for supplying RF power to the electrode of the electrostatic chuck tends to function properly only when a low RF power is applied. When a high RF power is supplied to a conventional conductor, an arc discharge may occur.

[0004]

[0004] Therefore, in the art, there is a need for improved methods and apparatuses for conduits for electric wires that supply power to a chuck.

Summary of the Invention

[0005]

[0005] Embodiments of the present disclosure generally relate to apparatuses and methods used in the manufacture of semiconductor devices. More specifically, embodiments of the present disclosure relate to a conduit for an electric wire for supplying power to an electrostatic chuck of a substrate processing chamber.

[0006]

[0006] In one embodiment, there is provided an integrated wire conduit including a central conductor, a socket coupled to a first end of the central conductor, a male insert coupled to a second end of the central conductor, a dielectric sheath surrounding the central conductor, and an outer conductor surrounding the dielectric sheath, and having a substantially 90-degree bend formed along its length.

[0007]

[0007] In another embodiment, there is provided a chamber including a chamber body defining a processing region, a substrate support movably disposed in the processing region, and an integrated wire conduit coupled to the substrate support. The integrated wire conduit includes a central conductor, a dielectric sheath surrounding the central conductor, and an outer conductor surrounding the dielectric sheath, and has a substantially 90-degree bend formed along its length.

[0008]

[0008] In another embodiment, there is provided a method of forming an integrated wire conduit. The method includes forming a linear article by disposing a first tube made of a conductive material, installing a dielectric sheath around the circumference of the first tube, and disposing a second tube made of a conductive material so as to surround the outer surface of the dielectric sheath, and forming a bend in the linear article, the bend being substantially 90 degrees.

[0009]

[0009] To enable a detailed understanding of the features of the present disclosure described above, the present disclosure summarized above will be described more specifically with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings merely show typical embodiments of the present disclosure and should not be regarded as limiting the scope of the present disclosure, as the present disclosure may admit other equally effective embodiments.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3A

Figure 3B

Figure 4

Embodiments for Carrying Out the Invention

[0011]

[0015] For ease of understanding, the same reference numerals are used as much as possible to denote the same elements common to the drawings. The elements and features of one embodiment can be beneficially incorporated into other embodiments without further elaboration.

[0012]

[0016] Embodiments of the present disclosure relate to a substrate processing chamber used in substrate processing in the manufacture of electronic devices. Substrate processing includes deposition processes, etching processes, and other low-pressure, process, plasma processes, and thermal processes used to manufacture electronic devices on a substrate. Examples of process chambers and / or systems that can be adapted to benefit from the exemplary aspects of the present disclosure are the Producer (registered trademark) APF (trademark) PECVD system commercially available from Applied Materials, Inc. located in Santa Clara, California. Other process chambers and / or processing platforms, including those from other manufacturers, can be considered to be adapted to benefit from the aspects of the present disclosure.

[0013]

[0017] Embodiments of the deposition chamber disclosed herein can be used in the manufacture of memory devices, specifically, for the deposition of hard masks used during the manufacture of memory devices. Current memory devices can retain stored data for very long periods of time without applying a voltage, and the read speed of such memory devices is relatively high. Also, erasing stored data and rewriting data to the memory device are relatively easy. For this reason, memory devices are widely used in microcomputers, automatic control systems, and the like. To increase the bit density of memory devices and reduce the cost per bit, three-dimensional NAND (three-dimensional not AND) memory devices have been developed. Also, other memory devices such as DRAM (dynamic random access memory), EM (expanded memory), and ReRAM (resistive random access memory), as well as advanced hard mask materials for forming them, have been developed, promoting further development of the semiconductor industry.

[0014]

[0018] In three-dimensional NAND technology, vertical gate three-dimensional memory cells are being considered for cost reduction as the number of memory cell layers increases. Stacks of oxides / silicon and oxides / nitride layers are useful because of the advantages of material integration, but as the number of memory cell layers increases, the layer thickness becomes a limiting factor. Therefore, reducing the thickness of the memory cell layer has attracted attention, but problems such as the quality of the oxide (i.e., breakdown voltage), the resistivity of silicon, and high aspect ratio etching are not solved even when the layer thickness is reduced.

[0015]

[0019] FIG. 1 is a schematic side cross-sectional view of an exemplary processing chamber 100 suitable for performing a deposition process. In one embodiment, the processing chamber 100 can be configured to deposit a high-precision patterning film on a substrate, such as an amorphous carbon hard mask film.

[0016]

[0020] The processing chamber 100 includes a lid assembly 105, a spacer 110 disposed in the chamber body 192, a substrate support 115, and a variable pressure system 120. The lid assembly 105 includes a lid plate 125 and a heat exchanger 130. In the illustrated embodiment, the lid assembly 105 also includes a showerhead 135. However, in other embodiments, the lid assembly 105 includes a concave or dome-shaped gas introduction plate (shown in FIG. 7).

[0017]

[0021] The lid assembly 105 is coupled to a process gas source 140. The process gas source 140 includes a precursor gas for forming a film on a substrate 145 supported by the substrate support 115. As an example, the process gas source 140 includes, among others, precursor gases such as carbon-containing gases, hydrogen-containing gases, and helium. In a specific example, the carbon-containing gas includes acetylene (C2H2). The process gas source 140 supplies the precursor gas to a plenum 190 disposed in the lid assembly 105. The lid assembly includes one or more channels for guiding the precursor gas from the process gas source 140 to the plenum 190. From the plenum, the precursor gas flows through the showerhead 135 into the processing region 160.

[0018]

[0022] Also, the lid assembly 105 is coupled to an optional remote plasma source 150. The remote plasma source 150 is coupled to a cleaning gas source 155 for supplying a cleaning gas to a processing region 160 formed inside the spacer 110 between the lid assembly 105 and the substrate 145. In one embodiment, the cleaning gas is supplied through a central conduit 191 formed axially through the lid assembly 105. In another embodiment, the cleaning gas is supplied through the same channel that guides the precursor gas. Exemplary cleaning gases include oxygen-containing gases such as oxygen and / or ozone, fluorine-containing gases such as NF3, or combinations thereof.

[0019]

[0023] In addition to, or as an alternative to, the remote plasma source 150, the lid assembly 105 is also coupled to a first or upper radio frequency (RF) power source 165. The first RF power source 165 facilitates the maintenance or generation of a plasma, such as a plasma generated from a cleaning gas. In one embodiment, the remote plasma source 150 is omitted and the cleaning gas is ionized in situ to a plasma via the first RF power source 165. The substrate support 115 is coupled to a second or lower RF power source 170. The first RF power source 165 may be a high-frequency RF power source (e.g., about 13.56 MHz or about 40 MHz), and the second RF power source 170 may be a low-frequency RF power source (e.g., about 2 MHz or about 13.56 MHz). Note that other frequencies are also contemplated. In some implementations, the second RF power source 170 is a hybrid frequency RF power source that provides both high-frequency and low-frequency power. The use of a two-frequency RF power source, particularly the use of a two-frequency RF power source for the second RF power source 170, improves film deposition. When using a second RF power source 170 that provides two-frequency power such as 13.56 MHz and 40 MHz, the 13.56 MHz frequency improves the seeding of the deposited film, and the 40 MHz frequency increases the ionization and deposition rate of the film.

[0020]

[0024] One or both of the first RF power source 165 and the second RF power source 170 are used to generate or maintain a plasma in the processing region 160. For example, the second RF power source 170 can be used during a deposition process, and the first RF power source 165 can be used during a cleaning process (either alone or in conjunction with the remote plasma source 150). In some deposition processes, the first RF power source 165 is used in combination with the second RF power source 170. During the deposition process, one or both of the first RF power source 165 and the second RF power source 170 supply power in the range of about 4 kilowatts (kW) to about 9 kW, e.g., about 4 kW to about 6 kW, to the processing region 160 to promote the ionization of the precursor gas.

[0021]

[0025] The substrate support 115 is coupled to an actuator 175 that provides movement of the substrate support 115 in the Z direction. The substrate support 115 is also coupled to a conduit 178 for wires that enables vertical movement of the substrate support 115 while maintaining communication with a second RF power source 170, along with other power and fluid connections. The spacer 110 is disposed within the chamber body 192. The height of the spacer 110 enables vertical movement of the substrate support 115 within the processing region 160. In one example, the substrate support 115 is movable relative to the lid assembly 105 (e.g., relative to the lower surface of the showerhead 135) from a first distance 180A to a second distance 180B. In some embodiments, the first distance 180A is about 14 inches and the second distance is about 11.2 inches. In contrast to conventional plasma enhanced chemical vapor deposition (PECVD) processes, the spacer 110 greatly increases the distance (and thus the region therebetween) between the substrate support 115 and the lid assembly 105. The increased distance between the substrate support 115 and the lid assembly 105 reduces collisions of ionized species in the processing region 160, resulting in deposition of a film with less tensile stress. A film deposited with less tensile stress promotes improvement in the flatness of the substrate on which the film is formed (e.g., less warping). As the warping of the substrate decreases, the accuracy of downstream patterning processes is improved.

[0022]

[0026] The variable pressure system 120 includes a first pump 182 and a second pump 184. The first pump 182 is a roughing pump that can be used during a cleaning process and / or a substrate transfer process. A roughing pump is generally configured to move a higher volume flow rate and / or operate at a relatively high (although still below atmospheric pressure) pressure. In one example, the first pump maintains a chamber internal pressure of from about 300 m-torr to about 800 m-torr, e.g., from about 400 torr to about 6 m-torr, during a cleaning process. Using a roughing pump during a cleaning process tends to result in a relatively high pressure and / or volume flow rate of the cleaning gas (compared to a deposition process). The relatively high pressure and / or volume flow rate during the cleaning process improves the cleaning of the chamber surface.

[0023]

[0027] The second pump 184 may be a turbo pump used during the deposition process. Turbo pumps are generally configured to operate at relatively low volumetric flow rates and / or pressures. For example, a turbomolecular pump is configured to maintain the processing region 160 of the process chamber at a pressure of about 10 mtorr or less, for example about 5 mtorr or less, during the deposition process. Due to the pressure reduction in the processing region 160 maintained during deposition, when depositing a carbon-based hard mask, reduced tensile stress and / or increased sp 2 -sp 3 deposition of a film having conversion is promoted. Thus, the process chamber 100 is configured to use both a relatively low pressure for improving deposition and a relatively high pressure for improving cleaning.

[0024]

[0028] In some embodiments, both the first pump 182 and the second pump 184 are used during the deposition process. A valve 186 is used to control the conductance path to one or both of the first pump 182 and the second pump 184. The valve 186 also provides symmetric pumping from the processing region 160.

[0025]

[0029] Figures 2A and 2B are schematic cross-sectional views of the wire conduit 178. The wire conduit 178 includes a first end 200 and a second end 205. The first end 200 interfaces with the substrate support 115, and the second end 205 interfaces with the facility interface 215. The facility interface 215 includes not only the second RF power supply 170 (shown in FIG. 1) but also an RF match (not shown).

[0026]

[0030] The wire conduit 178 is a single (one-piece) composite conductor having a curved portion 210 formed therein. The terms "single" and / or "one-piece" can be defined as having an indivisible nature (i.e., the whole) of the unit. The wire conduit 178 includes at least three portions each formed as an integral or single unit in the longitudinal direction. The terms "single" and / or "one-piece" can be distinguished from conventional conductive members including modular or individual components joined together by welding, brazing, or other methods.

[0027]

[0031] The single unit is manufactured in a straight orientation and then bent to include the curved portion 210. Thus, the three portions of the wire conduit 178 have no brazed joints or seams along its length, and its efficiency and / or operation can be improved. The curved portion 210 is substantially 90 degrees, where substantially is defined as ±5 degrees. The three portions include a center conductor 220, a dielectric sheath 225, and an outer conductor 230. The center conductor 220 is typically a metal having good electrical conductivity as well as thermal conductivity, such as copper (Cu). The dielectric sheath 225 is an electrical insulating material such as a polymer material, for example, polyetheretherketone (PEEK) or polytetrafluoroethylene (PTFE). The outer conductor 230 is a metal material such as aluminum.

[0028]

[0032] The substrate support 115 includes an electrostatic chuck 235 and a facility plate 240 separated by a dielectric layer 245. The center conductor 220 supplies RF power to the facility plate 240, and the outer conductor 230 functions as a ground connection (e.g., is electrically floating).

[0029]

[0033] The wire conduit 178 includes a first flange 246 at a first end 200 and a second flange 248 at a second end 205. The first flange 246 is coupled to the substrate support 115, and the second flange 248 is coupled to the facility interface 215.

[0030]

[0034] The wire conduit 178 of FIG. 2A includes a central conduit 247 that can be used to transmit power or fluid from the equipment interface 215 to the substrate support 115. For example, the central conduit 247 can be used to supply a chucking force to the electrostatic chuck 235. In another embodiment, the central conduit 247 can be used to supply a coolant and / or a backside gas to the substrate support 115.

[0031]

[0035] FIG. 2B is an enlarged partial cross-sectional view of the wire conduit 178 shown in FIG. 1A. The wire conduit 178 includes a void or central opening 250 formed by the inner diameter of the center conductor 220. The central conduit 247 shown in FIG. 2A is not shown in the central opening 250 of FIG. 2B. The center conductor 220, which can be a tubular member, is shown between a first dielectric layer 255 and a second dielectric layer 260. The first dielectric layer 255 and the second dielectric layer 260 constitute a dielectric sheath 225. The outer conductor 230, which can be a tubular member, is shown outside the second dielectric layer 260.

[0032]

[0036] The wire conduit 178 according to this embodiment is improved over conventional electrical cables or conductors. For example, the wire conduit 178 includes a curved portion 210 (e.g., a curve or arc) that would have a sharp L-shaped or 90-degree connection of two individual conductors in a conventional conductor. The curved portion 210 eliminates arc discharge at a conventional 90-degree connection. Further, conventional conductors include a plurality of portions that are brazed at joints. The brazed joints have an electrical resistance higher than the electrical resistance of the center conductor 220. Thus, when the wire conduit 178 is provided alone, the flow of current along the center conductor 220 is improved. Also, the single-piece design provides more robust insulation while having a smaller outer diameter compared to conventional conductors.

[0033]

[0037] Furthermore, while the center conductor 220 is used to carry power, the center conductor 220 is also used to conduct heat from the substrate support 115. For example, a test of the substrate support 115 to which the wire conduit 178 is coupled showed that the temperature of the electrostatic chuck 235 decreased significantly compared to a conventional conductor.

[0034]

[0038] One or both of the central opening 250 and the central conduit 247 can be used for power transmission to the electrostatic chuck 235, wiring of temperature probes such as thermocouples, and other electrical connections. The central opening 250 and / or the central conduit 247 are effectively shielded from RF noise and provide noise-free (or minimum noise) coupling to components disposed therein.

[0035]

[0039] The wire conduit 178 can be formed by manufacturing various conductor and dielectric layers in a linear (e.g., 180-degree) orientation and then bending the manufactured article from the linear orientation to include the bend 210. The central conduit 247 and the outer conductor 230 are vacuum annealed during initial manufacture. Next, the dielectric sheath 225 is disposed over the center conductor 220. Thereafter, the outer conductor 230 is disposed over the dielectric sheath 225 to form a non-curved assembly. Next, the first flange 246 and the second flange 248 are welded onto the non-curved assembly. After welding, the non-curved assembly is attached to a jig to form the bend 210. The wire conduit 178 includes an outer diameter 270 before bending, and the outer diameter after bending can be ±0.06 inches at the bend 210.

[0036]

[0040] FIG. 3A is an enlarged cross-sectional view of the first end 200 of the wire conduit 178. The first end 200 includes a connector 320 extending from the outer dielectric sheath 325. FIG. 3B is a cross-sectional view of the second end 205 of the wire conduit 178. The second end 205 also includes a connector 330 extending from the outer dielectric sheath 325.

[0037]

[0041] The connectors 320 and 330 include a first conductor 335 located centrally within the outer dielectric sheath 325. The outer dielectric sheath 325 does not extend to the termination of the end of the wire conduit 178 to enable coupling to the substrate support 115. The connectors 320 and 330 also include a second conductor 340 substantially surrounding the first conductor 335.

[0038]

[0042] Referring to the connector 320, the first conductor 335 is connected to a socket 345 that is coupled to the first conductor 335 by a conductive housing 350. The socket 345 and the conductive housing 350 include a screw connection portion 355. Referring to the connector 330, the first conductor 335 is coupled to a male insert 360. The socket 345 is adapted to couple to the chucking electrode of the electrostatic chuck 235.

[0039]

[0043] The first conductor 335 and the second conductor 340 are electrically separated (within the central opening 250) by one or both of a dielectric material 365 and a space or gap 370. The dielectric material 365 can be a polymer material such as PEEK, PTFE, or other polymer materials and / or insulating materials. Both the first conductor 335, the second conductor 340, the socket 345, the conductive housing 350, and the male insert 360 are made of a conductive metal such as copper.

[0040]

[0044] The structure of the wire conduit 178 described herein provides an exposed interface surface 375 of the second conductor 340 that includes a length 380 that is longer than the length of a conventional conductor. Further, the structure of the wire conduit 178 described herein provides a shoulder region or stop 385 of the male insert 360.

[0041]

[0045] FIG. 4 is an enlarged cross-sectional view of a portion of the electrostatic chuck 235 and the connector 320. The electrostatic chuck 235 includes a pack 400. The pack 400 includes a plurality of radially extending fluid channels 405 formed therein that are in fluid communication with each other, and a plurality of axially extending fluid channels 410. Each of the fluid channels 405 is in fluid communication with an inlet conduit 412. The inlet conduit 412 is coupled to a coolant source 414. Each of the fluid channels 405 is sealed by a cap plate 415. The cap plate 415 can be made of the same material as the pack 400 or aluminum and can be welded or otherwise coupled to the pack 400 to seal the fluid channels 405.

[0042]

[0046] The coolant source 414 contains a coolant that cools the substrate support 115. For example, the coolant from the coolant source 414 is flowed into the fluid channel 405 and / or the fluid channel 410 to maintain the temperature of the electrostatic chuck 235 (and / or the substrate disposed thereon). The temperature of the substrate support 115 can be maintained at about 0°C to about -10°C via the cooling fluid. The coolant includes, for example, a heat transfer fluid sold under the trade name GALDEN (registered trademark).

[0043]

[0047] The fluid channel 410 is fluidly coupled to the circular channel 420 by the central channel 425. The circular channel 420 substantially surrounds the connector 320. The fluid flows from the fluid channel 410 through the central channel 425 into the circular channel 420. A seal 430, such as an elastomeric O-ring, prevents the fluid from leaking from the circular channel 420.

[0044]

[0048] Although the foregoing is directed to embodiments of the present disclosure, other additional embodiments of the present disclosure can be devised without departing from its basic scope as determined by the following claims.

Claims

1. A conduit for an integrated wire, comprising: A central conductor; A socket coupled to a first end of the central conductor; A male insert coupled to a second end of the central conductor; A dielectric sheath surrounding the central conductor and having a first dielectric layer and a second dielectric layer surrounding the first dielectric layer; An outer conductor surrounding the dielectric sheath and being provided with a substantially 90-degree bend formed along the length of the outer conductor, the conduit for an integrated wire.

2. The central conductor comprises a tube containing a copper (Cu) material, the central conductor is used for conducting heat and electricity, and the central conductor contains an aluminum (Al) material, the conduit for an integrated wire according to claim 1.

3. The conduit for an integrated wire according to claim 1, further comprising a first flange and a second flange coupled to the outer conductor.

4. The first flange is coupled to a first end of the outer conductor, and the second flange is coupled to a second end of the outer conductor, the conduit for an integrated wire according to claim 3.

5. A chamber, comprising: A chamber body defining a processing region; A substrate support movably disposed in the processing region; A conduit for an integrated wire coupled to the substrate support, the conduit for an integrated wire comprising: A central conductor; A dielectric sheath surrounding the central conductor and having a first dielectric layer and a second dielectric layer surrounding the first dielectric layer; An outer conductor surrounding the dielectric sheath and being provided with a substantially 90-degree bend formed along the length of the outer conductor, the chamber comprising the conduit for an integrated wire.

6.

6. The chamber according to claim 5, wherein the central conductor comprises a tube containing a copper (Cu) material, and the outer conductor contains an aluminum (Al) material.

7. The chamber according to claim 5, further comprising a first flange coupled to a first end of the outer conductor and a second flange coupled to a second end of the outer conductor.

8. A method of forming a conduit for an integrated wire, comprising: forming a linear article, disposing a first tube made of a conductive material, installing a dielectric sheath around the circumference of the first tube, disposing a second tube made of a conductive material so as to surround the outer surface of the dielectric sheath, and forming a linear article including the above, forming a curved portion on the linear article, the curved portion being substantially 90 degrees, and a method including the above.

9. The method according to claim 8, wherein the first tube and the second tube are annealed before the dielectric sheath is installed.

10. The method according to claim 8, wherein the flange is welded to the second tube at both ends of the flange before the curved portion is formed.

11. An integrated wire conduit, comprising: a central conductor having a first tube, a socket including a screw-type connection portion coupled to a first end of the central conductor, a male insert coupled to a second end of the central conductor, a dielectric sheath surrounding the central conductor and having a first dielectric layer and a second dielectric layer surrounding the first dielectric layer, and an outer conductor having a second tube surrounding the first tube and the dielectric sheath An integrated wire conduit, comprising a curved portion substantially 90 degrees formed along the length of the outer conductor.

12. The integrated wire conduit according to claim 11, wherein the second end portion includes a connector having a first conductor and a second conductor, and the second conductor surrounds the male insert.

13. The integrated wire conduit according to claim 12, wherein the first conductor is electrically coupled to the male insert.

14. The integrated wire conduit according to claim 12, wherein the first conductor extends to the first end portion, and the socket is electrically coupled to the first conductor.

15. The integrated wire conduit according to claim 11, wherein the male insert extends beyond the end portion of the dielectric sheath.

16. The integrated wire conduit according to claim 11, wherein the screw-type connection portion provides electrical communication between the male insert and the socket.

17. The integrated wire conduit according to claim 11, further comprising a first flange and a second flange coupled to the outer conductor.

18. The integrated wire conduit according to claim 17, wherein the first flange is coupled to the first end portion of the outer conductor, and the second flange is coupled to the second end portion of the outer conductor.

19. The integrated wire conduit according to claim 11, wherein the central conductor includes a copper (Cu) material.

20. The integrated wire conduit according to claim 19, wherein the outer conductor includes an aluminum (Al) material.

21. The integrated wire conduit according to claim 19, wherein the first tube is formed of a copper (Cu) material.

22. An integrated wire conduit, a central conductor, a socket coupled to a first end of the central conductor, a male insert coupled to a second end of the central conductor, a dielectric sheath surrounding the central conductor, an outer conductor disposed outside the dielectric sheath, the outer conductor having a substantially 90-degree bend formed along the length thereof, and comprising The male insert extends beyond an end of the dielectric sheath, a conduit for an integrated wire.

23. The central conductor includes a first tube, The socket includes a screw-type connection portion, The outer conductor includes a second tube surrounding the first tube and the dielectric sheath, the conduit for an integrated wire according to claim 22.

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