Semiconductor device

Abstract

To provide a semiconductor device that can improve yield.SOLUTION: A semiconductor device 1 according to one embodiment includes: a first frame 10; a first chip 11 provided on the first frame; a second frame 20 separated from the first frame in a first direction X; a second chip 21 provided on the second frame; and a first joint terminal 24 provided above the second chip. The first frame 10 includes a first terminal portion T2 extending toward the second frame 20 side. The first joint terminal 24 includes a second terminal portion T3 extending toward the first frame 10 side. The second terminal portion T3 includes a first projecting portion 24d and a second projecting portion 24e each of which projects toward the first frame 10 and which are spaced apart from each other in a second direction Y. An end portion of the first projecting portion 24d and an end portion of the second projecting portion 24e are each joined on the first terminal portion T2.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor device.

Background Art

[0002] A semiconductor device using a lead frame is known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Summary of the Invention

Problems to be Solved by the Invention

[0004] To provide a semiconductor device capable of improving the yield.

Means for Solving the Problems

[0005] The semiconductor device according to the embodiment includes a first frame, a first chip provided on the first frame, a second frame spaced apart from the first frame in a first direction, a second chip provided on the second frame, and a first bonding terminal provided above the second chip and electrically connected to the second chip. The first frame includes a first terminal portion extending toward the second frame side. The first bonding terminal includes a second terminal portion extending toward the first frame side. The second terminal portion includes a first protruding portion and a second protruding portion that each protrude toward the first frame side and are spaced apart from each other in a second direction intersecting the first direction. The end of the first protruding portion and the end of the second protruding portion are respectively bonded onto the first terminal portion. The first terminal portion includes a third protruding portion and a fourth protruding portion, each of which protrudes toward the second frame side and is spaced apart from each other in the second direction. The end of the first protruding portion is joined on the third protruding portion. The end of the second protruding portion is joined on the fourth protruding portion. In the second direction, the length of the third protruding portion is longer than the length of the first protruding portion, and the length of the fourth protruding portion is longer than the length of the second protruding portion. The ends of the third protruding portion and the fourth protruding portion are sandwiched between the first protruding portion and the second protruding portion of the second terminal portion and are located closer to the first frame side than the first surface facing the first frame.

Brief Description of the Drawings

[0006]

Figure 1

Figure 2

Figure 3

Figure 4

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Figure 6

Figure 7

Figure 8

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Figure 10

Figure 11

Figure 12

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Figure 14

Figure 15

Figure 16

Embodiments for Carrying Out the Invention

[0007] Embodiments will be described below with reference to the drawings. In the following description, components having substantially the same functions and configurations may be denoted by the same reference numerals, and repeated descriptions may be omitted. Also, all descriptions of one embodiment apply to the descriptions of other embodiments as well, unless explicitly or implicitly excluded.

[0008] 1. First Embodiment A semiconductor device according to the first embodiment will be described. Hereinafter, a semiconductor device using a lead frame will be described as an example. The semiconductor device is used, for example, in a transistor package.

[0009] 1.1 Configuration of the Semiconductor Device The configuration of the semiconductor device according to this embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing an example of the configuration of the semiconductor device. In the example of FIG. 1, the resin is shown by a solid line. The internal components covered by the resin are shown by a broken line. The outside of the resin (the part not covered by the resin) is shown by a solid line. FIG. 2 is a plan view showing an example of the internal configuration of the semiconductor device. In the example of FIG. 2, the resin is omitted.

[0010] As shown in FIG. 1, the semiconductor device 1 includes a lead frame 10, a chip 11, electrodes 12, electrode 12a, a bonding member 13, a bonding terminal 14, an electrode terminal 15, a wiring 16, an electrode terminal 17, a lead frame 20, a chip 21, electrodes 22, electrode 22a, a bonding member 23, a bonding terminal 24, an electrode terminal 25, a wiring 26, and a resin 30. In the following description, the X direction is substantially parallel to the surface of the lead frame 10, and corresponds to, for example, the direction from the lead frame 10 toward the lead frame 20 (the direction from the electrode terminal 17 toward the electrode terminal 15). The Y direction is substantially parallel to the surface of the lead frame 10, and corresponds to, for example, the direction from the lead frame 10 toward the electrode terminal 17. The Z direction is substantially perpendicular to the surface of the lead frame 10, and corresponds to the direction from the lead frame 10 toward the chip 11.

[0011] The resin 30 is, for example, an epoxy resin. The resin 30 covers a part of the lead frame 10, the chip 11, the electrodes 12, electrode 12a, the bonding member 13, the bonding terminal 14, a part of the electrode terminal 15, the wiring 16, a part of the electrode terminal 17, a part of the lead frame 20, the chip 21, the electrodes 22, electrode 22a, the bonding member 23, the bonding terminal 24, a part of the electrode terminal 25, and the wiring 26.

[0012] As shown in FIG. 2, the lead frame 10 is a frame that supports and fixes the chip 11. The lead frame 10 has, for example, a plate-like shape. The end portion of the lead frame 10 on the side opposite to the electrode terminal 17 extends in the Y direction. The lead frame 10 is made of a conductive material and may be, for example, a metal material. Details of the lead frame 10 will be described later.

[0013] The chip 11 is, for example, an IC (Integrated Circuit) chip. The chip 11 is provided on the lead frame 10.

[0014] The electrode 12 is, for example, a gate electrode. The electrode 12 is provided on the chip 11. The electrode 12 is made of a conductive material and may be, for example, a metal material. Note that the electrode 12 may have, for example, a bonding terminal.

[0015] Electrode 12a is, for example, a source electrode. Electrode 12a has, for example, a substantially L-shaped configuration in a top view (when viewed from above the plane of FIG. 2). Electrode 12a is provided on chip 11. Electrode 12a is composed of a conductive material and may be, for example, a metal material.

[0016] Bonding member 13 is, for example, solder. Bonding member 13 has, for example, a substantially L-shaped configuration in a top view. Bonding member 13 is provided on electrode 12a. Bonding member 13 electrically connects electrode 12a and bonding terminal 14.

[0017] Bonding terminal 14 is, for example, a terminal that electrically connects electrode 12a and electrode terminal 17. Bonding terminal 14 has, for example, a substantially L-shaped configuration in a top view. Bonding terminal 14 is provided on bonding member 13. Bonding terminal 14 is electrically connected to chip 11 via bonding member 13 and electrode 12a. Bonding terminal 14 is composed of a conductive material and may be, for example, a metal material. Details of bonding terminal 14 will be described later.

[0018] Electrode terminal 15 is, for example, a gate terminal. Electrode terminal 15 is provided spaced apart from lead frame 10 in the Y direction. The end of electrode terminal 15 opposite to lead frame 10 extends in the Y direction. Electrode terminal 15 is composed of a conductive material and may be, for example, a metal material.

[0019] Electrode terminal 15 includes a base portion 15a, a bent portion 15b, and a bonding portion 15c. Electrode terminal 15 bends upward, for example, at the boundary between base portion 15a and bent portion 15b, and bends in the Y direction at the boundary between bent portion 15b and bonding portion 15c. The surface of base portion 15a and the surface of bonding portion 15c are substantially parallel. The surface of bonding portion 15c is located above the surface of base portion 15a. In other words, electrode terminal 15 has a step in the Y direction.

[0020] The wiring 16 is, for example, a bonding wire. One end of the wiring 16 is joined to the electrode 12. The other end of the wiring 16 is joined to the joint portion 15c of the electrode terminal 15. The wiring 16 electrically connects the electrode 12 and the electrode terminal 15. The wiring 16 is made of a conductive material and may be, for example, a metal material. In addition, when the electrode 12 has a bonding terminal, instead of the wiring 16, the bonding terminal of the electrode 12 may be electrically connected to the electrode terminal 15.

[0021] The electrode terminal 17 is, for example, a source terminal. The electrode terminal 17 is provided at a distance from the electrode terminal 15 in the X direction. The electrode terminal 17 is provided at a distance from the lead frame 10 in the Y direction. The end of the electrode terminal 17 on the side opposite to the lead frame 10 extends in the Y direction. The electrode terminal 17 is made of a conductive material and may be, for example, a metal material.

[0022] The electrode terminal 17 includes a base portion 17a, a bent portion 17b, and a joint portion 17c. The electrode terminal 17 bends upward, for example, at the boundary between the base portion 17a and the bent portion 17b, and bends in the Y direction at the boundary between the bent portion 17b and the joint portion 17c. The surface of the base portion 17a and the surface of the joint portion 17c are substantially parallel. The surface of the joint portion 17c is located above the surface of the base portion 17a. In other words, the electrode terminal 17 has a step in the Y direction.

[0023] The lead frame 20 is a frame that supports and fixes the chip 21. The lead frame 20 has, for example, a plate-like shape. The lead frame 20 is provided at a distance from the lead frame 10 in the X direction. The end of the lead frame 20 on the side opposite to the electrode terminal 25 extends in the Y direction. The lead frame 20 is made of a conductive material and may be, for example, a metal material.

[0024] The chip 21 is, for example, an IC chip. The chip 21 is provided on the lead frame 20.

[0025] The electrode 22 is, for example, a gate electrode. The electrode 22 is provided on the chip 21. The electrode 22 is made of a conductive material and may be, for example, a metal material. Note that the electrode 22 may have, for example, a bonding terminal.

[0026] The electrode 22a is, for example, a source electrode. The electrode 22a has, for example, a substantially L-shaped configuration in a top view. The electrode 22a is provided on the chip 21. The electrode 22a is made of a conductive material and may be, for example, a metal material.

[0027] The bonding member 23 is, for example, solder. The bonding member 23 has, for example, a substantially L-shaped configuration in a top view. The bonding member 23 is provided on the electrode 22a. The bonding member 23 electrically connects the electrode 22a and the bonding terminal 24.

[0028] The bonding terminal 24 is, for example, a terminal that electrically connects the electrode 22a and the lead frame 10. The bonding terminal 24 has, for example, a substantially L-shaped configuration in a top view. The bonding terminal 24 is provided on the bonding member 23. The bonding terminal 24 is electrically connected to the chip 21 via the bonding member 23 and the electrode 22a. The bonding terminal 24 is made of a conductive material and may be, for example, a metal material. Details of the bonding terminal 24 will be described later.

[0029] The electrode terminal 25 is, for example, a gate terminal. The electrode terminal 25 is provided spaced apart from the electrode terminal 15 in the X direction. The electrode terminal 25 is provided spaced apart from the lead frame 20 in the Y direction. The end of the electrode terminal 25 on the side opposite to the lead frame 20 extends in the Y direction. The electrode terminal 25 is made of a conductive material and may be, for example, a metal material.

[0030] The electrode terminal 25 includes a base portion 25a, a bent portion 25b, and a joint portion 25c. The electrode terminal 25 bends upward, for example, at the boundary between the base portion 25a and the bent portion 25b, and bends in the Y direction at the boundary between the bent portion 25b and the joint portion 25c. The surface of the base portion 25a and the surface of the joint portion 25c are substantially parallel. The surface of the joint portion 25c is located above the surface of the base portion 25a. In other words, the electrode terminal 25 has a step in the Y direction.

[0031] The wiring 26 is, for example, a bonding wire. One end of the wiring 26 is joined to the electrode 22. The other end of the wiring 26 is joined to the joint portion 25c of the electrode terminal 25. The wiring 26 electrically connects the electrode 22 and the electrode terminal 25. The wiring 26 is made of a conductive material and may be, for example, a metal material. When the electrode 22 has a bonding terminal, instead of the wiring 26, the bonding terminal of the electrode 22 may be electrically connected to the electrode terminal 25.

[0032] Details of the bonding terminal 14 will be described with reference to FIG. 2.

[0033] As shown in FIG. 2, the bonding terminal 14 includes a base portion 14a and a terminal portion T1. The terminal portion T1 is provided at the end of the bonding terminal 14 on the side of the electrode terminal 17. The terminal portion T1 has, for example, a substantially rectangular shape in a top view. The terminal portion T1 includes a bent portion 14b, a bridge portion 14c, a bent portion 14d, and a joint portion 14e.

[0034] The bonding terminal 14 bends upward, for example, at the boundary between the base portion 14a and the bent portion 14b, and bends in the Y direction at the boundary between the bent portion 14b and the bridge portion 14c. The bonding terminal 14 bends downward, for example, at the boundary between the bridge portion 14c and the bent portion 14d, and bends in the Y direction at the boundary between the bent portion 14d and the joint portion 14e. The surface of the base portion 14a, the surface of the bridge portion 14c, and the surface of the joint portion 14e are substantially parallel. The surface of the bridge portion 14c is located above the surface of the base portion 14a and the surface of the joint portion 14e. In other words, the bonding terminal 14 has a step in the Y direction.

[0035] As shown in FIG. 2, the terminal portion T1 is provided on the electrode terminal 17. More specifically, the joint portion 14e of the joint terminal 14 is joined on the joint portion 17c of the electrode terminal 17. Thereby, the terminal portion T1 is electrically connected to the electrode terminal 17. In other words, the joint terminal 14 is electrically connected to the electrode terminal 17 via the terminal portion T1.

[0036] Details of the lead frame 10 will be described with reference to FIG. 3. FIG. 3 is an enlarged view showing a part of the internal configuration of the semiconductor device 1 (an enlarged view of the region R1 in FIG. 2). In the example of FIG. 3, the chips 11 and 21, the electrodes 22 and 22a, and the joining member 23 are omitted.

[0037] As shown in FIG. 3, the lead frame 10 includes a base portion 10a and a terminal portion T2. The terminal portion T2 is provided at the end of the lead frame 10 on the side of the joint terminal 24 (the side of the lead frame 20). The terminal portion T2 extends toward the joint terminal 24. The terminal portion T2 has, for example, a substantially U-shaped configuration in a top view. The terminal portion T2 includes a bent portion 10b and a joint portion 10c.

[0038] The lead frame 10 bends upward, for example, at the boundary between the base portion 10a and the bent portion 10b, and bends in the X direction at the boundary between the bent portion 10b and the joint portion 10c. The surface of the base portion 10a and the surface of the joint portion 10c are substantially parallel. The surface of the joint portion 10c is located above the surface of the base portion 10a. In other words, the lead frame 10 has a step in the X direction.

[0039] The terminal portion T2 includes protruding portions 10d and 10e protruding toward the joint terminal 24 side (the lead frame 20 side). In other words, the end of the terminal portion T2 on the joint terminal 24 side is divided into two. The protruding portion 10d and the protruding portion 10e are spaced apart from each other in the Y direction. Note that the terminal portion T2 may include three or more protruding portions. In this case, these protruding portions are spaced apart from each other in the Y direction.

[0040] Details of the joint terminal 24 will be described with reference to FIG. 3.

[0041] As shown in FIG. 3, the bonding terminal 24 includes a base portion 24a and a terminal portion T3. The terminal portion T3 is provided at the end of the bonding terminal 24 on the side of the lead frame 10. The terminal portion T3 extends toward the lead frame 10 side. The terminal portion T3 has, for example, a substantially Y-shaped configuration in a top view. The terminal portion T3 includes bent portions 24b, a bridge portion 24c, bent portions 24f and 24g, and bonding portions 24h and 24i.

[0042] The bonding terminal 24 bends upward, for example, at the boundary between the base portion 24a and the bent portion 24b, and bends in the X direction at the boundary between the bent portion 24b and the bridge portion 24c. The bonding terminal 24 bends downward, for example, at the boundary between the bridge portion 24c and the bent portion 24f, and bends in the X direction at the boundary between the bent portion 24f and the bonding portion 24h. The bonding terminal 24 bends downward, for example, at the boundary between the bridge portion 24c and the bent portion 24g, and bends in the X direction at the boundary between the bent portion 24g and the bonding portion 24i. The surface of the base portion 24a, the surface of the bridge portion 24c, the surface of the bonding portion 24h, and the surface of the bonding portion 24i are substantially parallel. The surface of the bridge portion 24c is located above the surface of the base portion 24a, the surface of the bonding portion 24h, and the surface of the bonding portion 24i. In other words, the bonding terminal 24 has a step in the X direction.

[0043] The terminal portion T3 includes protruding portions 24d and 24e protruding toward the lead frame 10 side. In other words, the end of the terminal portion T3 on the lead frame 10 side is divided into two. The protruding portion 24d and the protruding portion 24e are spaced apart from each other in the Y direction. The protruding portion 24d includes a part of the bridge portion 24c, the bent portion 24f, and the bonding portion 24h. The protruding portion 24e includes a part of the bridge portion 24c, the bent portion 24g, and the bonding portion 24i. Note that the terminal portion T3 may include three or more protruding portions. In this case, these protruding portions are spaced apart from each other in the Y direction.

[0044] As shown in FIG. 3, the end of terminal portion T3 is provided on terminal portion T2. More specifically, joint portion 24h of terminal portion T3 is joined on joint portion 10c of terminal portion T2. Joint portion 24i of terminal portion T3 is joined on joint portion 10c of terminal portion T2. In other words, the end of protruding portion 24d of terminal portion T3 is joined on protruding portion 10d of terminal portion T2. The end of protruding portion 24e of terminal portion T3 is joined on protruding portion 10e of terminal portion T2. That is, terminal portion T3 and terminal portion T2 are joined at two joint surfaces. Hereinafter, the joint surface, the end of terminal portion T2 in contact with the joint surface, and the end of terminal portion T3 in contact with the joint surface are collectively referred to as the "joint portion". Thereby, terminal portion T3 is electrically connected to terminal portion T2. In other words, joint terminal 24 is electrically connected to lead frame 10 via terminal portions T3 and T2.

[0045] Note that lead frame 10, electrode terminals 15 and 17, lead frame 20, and electrode terminal 25 shown in FIG. 2 are, for example, parts of a lead frame not shown, and are the remaining parts after the lead frame not shown is cut and removed in the manufacturing process.

[0046] FIG. 4 is a perspective view showing a part of the internal configuration of semiconductor device 1 (a perspective view of region R1 in FIG. 2). In the example of FIG. 4, electrode 22 is omitted.

[0047] As shown in FIG. 4, the end of protruding portion 24d is provided on protruding portion 10d. The end of protruding portion 24d is joined to protruding portion 10d by joint member 27 formed on the upper surface of protruding portion 10d. Joint member 27 is, for example, solder. Joint member 27 electrically connects terminal portion T2 and terminal portion T3. The end of protruding portion 24e is provided on protruding portion 10e. The end of protruding portion 24e is joined to protruding portion 10e by joint member 27 formed on the upper surface of protruding portion 10e.

[0048] The end face of terminal portion T3 (the face of terminal portion T3 that is sandwiched between protruding portions 24d and 24e and faces the lead frame 10 (hereinafter also referred to as "face P2")) is located closer to the lead frame 20 side than the end face of terminal portion T2 (the face of terminal portion T2 that is sandwiched between protruding portions 10d and 10e and faces the lead frame 20 (hereinafter also referred to as "face P1")).

[0049] Due to the above structure, the upper part of the space (hereinafter also referred to as "space S1") surrounded by terminal portion T2, bonding member 27, terminal portion T3, bonding member 23, electrode 22a, chip 21, and lead frame 20 is not blocked by terminal portions T2 and T3. If the face of protruding portion 24d facing protruding portion 24e is "face P3" and the face of protruding portion 24e facing protruding portion 24d is "face P4", the semiconductor device 1 has a region surrounded by face P1, face P2, face P3, and face P4. In other words, an opening (hereinafter also referred to as "opening OP1") is formed by terminal portion T2 and terminal portion T3 (by protruding portions 10d, 10e, 24d, and 24e). That is, the semiconductor device 1 has an opening OP1 formed by terminal portion T2 and terminal portion T3. The region surrounded by face P1, face P2, face P3, and face P4 corresponds to opening OP1. Also, both ends of space S1 in the Y direction are not blocked.

[0050] The cross-sectional structure of the semiconductor device 1 will be described with reference to FIG. 5. FIG. 5 is a cross-sectional view showing an example of the structure of the semiconductor device 1 (a cross-sectional view taken along line I-I in FIG. 1).

[0051] As shown in FIG. 5, the lead frame 10 is bent by a bent portion 10b such that the surface of the bonding portion 10c is located above the surface of the base portion 10a. A chip 11 is provided on the lead frame 10. An electrode 12a is provided on the chip 11. A bonding member 13 is provided on the electrode 12a. A bonding terminal 14 is provided on the bonding member 13.

[0052] On the lead frame 20, a chip 21 is provided. On the chip 21, an electrode 22a is provided. On the electrode 22a, a bonding member 23 is provided. On the bonding member 23, a bonding terminal 24 is provided. The bonding terminal 24 is bent by the bent portions 24b and 24f so that the surface of the bridge portion 24c is positioned above the surface of the base portion 10a and the surface of the bonding portion 24h.

[0053] On the bonding portion 10c, a bonding portion 24h is provided. The bonding portion 24h is bonded to the bonding portion 10c by a bonding member 27.

[0054] The lead frame 10, the chip 11, the electrode 12a, the bonding member 13, the bonding terminal 14, the lead frame 20, the chip 21, the electrode 22a, the bonding member 23, and the bonding terminal 24 are covered with a resin 30. The resin 30 is embedded in the space S1.

[0055] 1.2 Manufacturing Method of Semiconductor Device A method for manufacturing the semiconductor device 1 will be described. In the present embodiment, a plurality of semiconductor devices 1 are formed on one lead frame. Before the formation of the resin 30, the internal components (hereinafter, also referred to as "component groups") of the semiconductor device 1 shown in FIG. 2 are arranged in a matrix on one lead frame. These plurality of component groups are sealed with the resin 30. Hereinafter, the formation process of the resin 30 will be described with reference to FIG. 6. FIG. 6 is a diagram for explaining the formation process of the resin 30. In the example of FIG. 6, a method (transfer method) of forming the resin 30 using a mold 50 is shown for a plurality of component groups arranged in a row in the X direction provided on the lead frame 40.

[0056] As shown in FIG. 6, the resin 30 is injected from the injection port of the mold 50. The resin 30 flows in the X direction (from the left side of the paper surface of FIG. 6 to the right side of the paper surface of FIG. 6) from the injection port of the mold 50 to the end of the mold 50. Thereby, between the injection port of the mold 50 and the end of the mold 50, a plurality of component groups provided on the lead frame 40 are sealed with the resin 30.

[0057] After the resin 30 is formed, the lead frame 40 is cut and removed, and a plurality of semiconductor devices 1 are formed.

[0058] The flow of the resin 30 during the formation of the resin 30 will be described with reference to FIG. 7. FIG. 7 is a diagram for explaining the flow of the resin 30. In the example of FIG. 7, the flow of the resin 30 injected into the component group of the semiconductor device 1 shown in FIG. 2 toward the space S1 is indicated by arrows.

[0059] As shown in FIG. 7, the resin 30 is injected from the X direction (the lead frame 10 side). The resin 30 bypasses the protrusion 24d to the outside and advances, flowing into the space S1. The resin 30 bypasses the protrusion 24e to the outside and advances, flowing into the space S1. The resin 30 advances downward through the opening OP1 formed by the terminal portion T2 and the terminal portion T3, and flows into the space S1.

[0060] 1.3 Effects according to this embodiment With the configuration according to this embodiment, the yield of the semiconductor device can be improved. Hereinafter, this effect will be described.

[0061] In a configuration in which the end of the terminal portion T3 of the bonding terminal 24 is bonded to the terminal portion T2 by the bonding member 27 formed on the upper surface of the terminal portion T2 of the lead frame 10, the larger the area of the bonding member 27 formed on the upper surface of the terminal portion T2 (the area of the bonding member 27 in contact with the terminal portions T2 and T3), the greater the residual stress of the bonding member 27. For this reason, depending on the area of the bonding member 27 formed on the upper surface of the terminal portion T2, the residual stress of the bonding member 27 may cause the strain of the bonding portion between the terminal portion T2 and the terminal portion T3 to increase. In addition, peeling between the terminal portion T2 and the terminal portion T3 may occur at the bonding portion.

[0062] On the other hand, in this embodiment, the terminal portion T2 includes protrusions 10d and 10e protruding toward the bonding terminal 24 side. The protrusion 10d and the protrusion 10e are spaced apart from each other in the Y direction. The terminal portion T3 includes protrusions 24d and 24e protruding toward the lead frame 10 side. The protrusion 24d and the protrusion 24e are spaced apart from each other in the Y direction.

[0063] The end of the protruding portion 24d of the terminal portion T3 is joined to the protruding portion 10d by a joining member 27 formed on the upper surface of the protruding portion 10d of the terminal portion T2. For this reason, the area of the joining member 27 formed on the upper surface of the protruding portion 10d is smaller than the area of the joining member 27 formed on the upper surface of the terminal portion T2 when the terminal portion T3 has no protruding portion. Thereby, the residual stress of the joining member 27 formed on the upper surface of the protruding portion 10d becomes smaller than the residual stress of the joining member 27 formed on the upper surface of the terminal portion T2 when the terminal portion T3 has no protruding portion.

[0064] The end of the protruding portion 24e of the terminal portion T3 is joined to the protruding portion 10e by a joining member 27 formed on the upper surface of the protruding portion 10e of the terminal portion T2. For this reason, the area of the joining member 27 formed on the upper surface of the protruding portion 10e is smaller than the area of the joining member 27 formed on the upper surface of the terminal portion T2 when the terminal portion T3 has no protruding portion. Thereby, the residual stress of the joining member 27 formed on the upper surface of the protruding portion 10e becomes smaller than the residual stress of the joining member 27 formed on the upper surface of the terminal portion T2 when the terminal portion T3 has no protruding portion.

[0065] Therefore, it is possible to suppress the strain at the joint portion between the terminal portion T2 and the terminal portion T3, and it is possible to suppress the occurrence of peeling between the terminal portion T2 and the terminal portion T3 at the joint portion.

[0066] In a configuration where the terminal portions T2 and T3 extend along the direction in which the resin 30 is injected and the end of the terminal portion T3 is joined onto the terminal portion T2, the resin 30 bypasses the terminal portion T3 and advances, flowing into the space S1. However, the flow of the resin 30 is obstructed by the terminal portions T2 and T3 that extend along the direction in which the resin 30 is injected, and there is a possibility that voids in the space S1 or unfilling of the resin 30 into the space S1 may occur.

[0067] In contrast, in the present embodiment, the end portion of the protruding portion 24d of the terminal portion T3 is provided on the protruding portion 10d of the terminal portion T2. The end portion of the protruding portion 24e of the terminal portion T3 is provided on the protruding portion 10e of the terminal portion T2. The surface P2 of the terminal portion T3, which is sandwiched between the protruding portion 24d and the protruding portion 24e and faces the lead frame 10, is located closer to the lead frame 20 side than the surface P1 of the terminal portion T2, which is sandwiched between the protruding portion 10d and the protruding portion 10e and faces the lead frame 20. In other words, the semiconductor device 1 has an opening OP1 formed by the terminal portion T2 and the terminal portion T3. Therefore, in the resin 30 forming process, the resin 30 not only bypasses the protruding portions 24d and 24e and flows into the space S1, but also advances downward through the opening OP1 and flows into the space S1. Thus, the filling property of the resin 30 can be improved. As a result, for example, a resin with a relatively short curing time can be used as the resin 30.

[0068] The larger the area of the resin 30 covering the terminal portion T2 (the area of the resin 30 in contact with the terminal portion T2), the greater the difference between the elongation of the terminal portion T2 due to heat and the elongation of the resin 30. Therefore, depending on the area of the resin 30 covering the terminal portion T2, peeling between the terminal portion T2 and the resin 30 may occur due to heat. Similarly, for the terminal portion T3, depending on the area of the resin 30 covering the terminal portion T3 (the area of the resin 30 in contact with the terminal portion T3), peeling between the terminal portion T3 and the resin 30 may occur due to heat.

[0069] On the other hand, in this embodiment, the semiconductor device 1 has an opening OP1 formed by the terminal portion T2 and the terminal portion T3. Therefore, the area of the resin 30 covering the terminal portion T2 is smaller than the area of the resin 30 covering the terminal portion T2 when no opening is formed. As a result, the difference between the elongation of the terminal portion T2 due to heat and the elongation of the resin 30 is smaller than the difference between the elongation of the terminal portion T2 due to heat and the elongation of the resin 30 when no opening is formed. The area of the resin 30 covering the terminal portion T3 is smaller than the area of the resin 30 covering the terminal portion T3 when no opening is formed. As a result, the difference between the elongation of the terminal portion T3 due to heat and the elongation of the resin 30 is smaller than the difference between the elongation of the terminal portion T3 due to heat and the elongation of the resin 30 when no opening is formed. Therefore, peeling between the terminal portion T2 and the resin 30 and peeling between the terminal portion T3 and the resin 30 can be suppressed.

[0070] 1.4 First Modification A semiconductor device according to a first modification of the first embodiment will be described. In the semiconductor device 1 according to the first modification of the first embodiment, the shape of the terminal portion T2 of the lead frame 10 is different from that of the first embodiment. In the following description, the description of the same configuration as that of the first embodiment will be omitted, and the configuration different from that of the first embodiment will be mainly described.

[0071] 1.4.1 Configuration of Semiconductor Device The configuration of the semiconductor device 1 according to this modification will be described with reference to FIG. 8. FIG. 8 is a perspective view showing a part of the internal configuration of the semiconductor device 1 (a figure corresponding to FIG. 4 of the first embodiment). In the example of FIG. 8, the electrode 22 is omitted.

[0072] As shown in FIG. 8, the terminal portion T2 has, for example, a substantially rectangular shape in a top view. The end portion of the terminal portion T2 on the bonding terminal 24 side is not divided into two or more.

[0073] The end of the protrusion 24d is joined onto the terminal part T2. More specifically, the end of the protrusion 24d is joined to the terminal part T2 by a joining member 27 formed on the upper surface of the terminal part T2. The end of the protrusion 24e is joined onto the terminal part T2. More specifically, the end of the protrusion 24e is joined to the terminal part T2 by a joining member 27 formed on the upper surface of the terminal part T2. That is, the terminal part T3 and the terminal part T2 are joined at two joining surfaces.

[0074] The end face of the terminal part T3 (the face P2 of the terminal part T3 that is sandwiched between the protrusions 24d and 24e and faces the lead frame 10) is located closer to the lead frame 20 side than the end face of the terminal part T2 (the face of the terminal part T2 that faces the lead frame 20 (hereinafter, also referred to as "face P5")).

[0075] With the above structure, the upper part of the space S1 is not blocked by the terminal parts T2 and T3. The semiconductor device 1 has a region surrounded by the faces P2, P3, P4, and P5. In other words, an opening OP1 is formed by the terminal part T2 and the terminal part T3 (by the terminal part T2, the protrusion 24d, and the protrusion 24e). That is, the semiconductor device 1 has an opening OP1 formed by the terminal part T2 and the terminal part T3. The region surrounded by the faces P2, P3, P4, and P5 corresponds to the opening OP1. Also, both ends of the space S1 in the Y direction are not blocked.

[0076] 1.4.2 Effects according to this modification According to this modification, the same effects as those of the first embodiment are achieved.

[0077] 1.5 Second modification A semiconductor device according to a second modification of the first embodiment will be described. In the semiconductor device 1 according to the second modification of the first embodiment, the shape of the terminal part T3 of the bonding terminal 24 is different from that of the first embodiment. In the following description, descriptions of configurations similar to those of the first embodiment will be omitted, and mainly configurations different from those of the first embodiment will be described.

[0078] 1.5.1 Configuration of the semiconductor device The configuration of the semiconductor device 1 according to this modification example will be described with reference to FIG. 9. FIG. 9 is a perspective view showing a part of the internal configuration of the semiconductor device 1 (a figure corresponding to FIG. 4 of the first embodiment). In the example of FIG. 9, the electrode 22 is omitted.

[0079] As shown in FIG. 9, the terminal portion T3 has, for example, a substantially rectangular shape in a top view. The terminal portion T3 includes a bent portion 24b, a bridge portion 24c, a bent portion 24j, and a joint portion 24k.

[0080] The bonding terminal 24 bends upward, for example, at the boundary between the base portion 24a and the bent portion 24b, and bends in the X direction at the boundary between the bent portion 24b and the bridge portion 24c. The bonding terminal 24 bends downward, for example, at the boundary between the bridge portion 24c and the bent portion 24j, and bends in the X direction at the boundary between the bent portion 24j and the joint portion 24k. The surface of the base portion 24a, the surface of the bridge portion 24c, and the surface of the joint portion 24k are substantially parallel. The surface of the bridge portion 24c is located above the surface of the base portion 24a and the surface of the joint portion 24k. In other words, the bonding terminal 24 has a step in the X direction.

[0081] The end portion of the terminal portion T3 on the lead frame 10 side is not divided into two or more.

[0082] The end portion of the terminal portion T3 is joined onto the protruding portion 10d. More specifically, the end portion of the terminal portion T3 is joined to the protruding portion 10d by a joining member 27 formed on the upper surface of the protruding portion 10d. The end portion of the terminal portion T3 is joined onto the protruding portion 10e. More specifically, the end portion of the terminal portion T3 is joined to the protruding portion 10e by a joining member 27 formed on the upper surface of the protruding portion 10e. That is, the terminal portion T3 and the terminal portion T2 are joined at two joining surfaces.

[0083] The end face of the terminal portion T3 (the face of the terminal portion T3 facing the lead frame 10 (hereinafter also referred to as "face P6")) is located closer to the lead frame 20 side than the end face of the terminal portion T2 (face P1 of the terminal portion T2 sandwiched between the protruding portion 10d and the protruding portion 10e and facing the lead frame 20).

[0084] With the above structure, the upper part of the space S1 is not blocked by the terminal parts T2 and T3. If the surface of the protruding part 10d facing the protruding part 10e is defined as "surface P7" and the surface of the protruding part 10e facing the protruding part 10d is defined as "surface P8", the semiconductor device 1 has a region surrounded by the surface P1, the surface P6, the surface P7, and the surface P8. In other words, an opening OP1 is formed by the terminal part T2 and the terminal part T3 (by the protruding part 10d, the protruding part 10e, and the terminal part T3). That is, the semiconductor device 1 has an opening OP1 formed by the terminal part T2 and the terminal part T3. The region surrounded by the surface P1, the surface P6, the surface P7, and the surface P8 corresponds to the opening OP1. Also, both ends of the space S1 in the Y direction are not blocked.

[0085] 1.5.2 Effects according to this modification According to this modification, the same effects as those of the first embodiment are achieved.

[0086] 2. Second embodiment The semiconductor device according to the second embodiment will be described. In the semiconductor device 1 according to the second embodiment, the internal configuration is different from that of the first embodiment. In the following description, the description of the same configuration as that of the first embodiment will be omitted, and the configuration different from that of the first embodiment will be mainly described.

[0087] 2.1 Configuration of the semiconductor device The configuration of the semiconductor device 1 according to this embodiment will be described with reference to FIGS. 10 and 11. FIG. 10 is a plan view showing an example of the configuration of the semiconductor device 1. In the example of FIG. 10, the resin is shown by a solid line. The internal components covered by the resin are shown by a broken line. The outside of the resin is shown by a solid line. FIG. 11 is a plan view showing an example of the internal configuration of the semiconductor device 1. In the example of FIG. 11, the resin is omitted.

[0088] As shown in FIG. 10, the semiconductor device 1 includes a lead frame 10, a chip 11, electrodes 12, electrode 12a, a bonding member 13, a bonding terminal 14, an electrode terminal 15, a wiring 16, an electrode terminal 17, and a resin 30.

[0089] The resin 30 covers a part of the lead frame 10, the chip 11, the electrodes 12, the electrode 12a, the bonding member 13, the bonding terminal 14, a part of the electrode terminal 15, the wiring 16, and a part of the electrode terminal 17.

[0090] As shown in FIG. 11, the lead frame 10 has, for example, a plate-like shape. The end of the lead frame 10 on the side opposite to the electrode terminal 17 extends in the Y direction.

[0091] The chip 11 is provided on the lead frame 10.

[0092] The electrode 12a has, for example, a substantially L-shaped configuration in a top view (when viewed from above the plane of FIG. 11). The electrode 12a is provided on the chip 11.

[0093] The bonding member 13 has, for example, a substantially L-shaped configuration in a top view. The bonding member 13 is provided on the electrode 12a. The bonding member 13 electrically connects the electrode 12a and the bonding terminal 14.

[0094] The bonding terminal 14 has, for example, a substantially L-shaped configuration in a top view. The bonding terminal 14 is provided on the bonding member 13. Details of the bonding terminal 14 will be described later.

[0095] The electrode terminal 17 is provided spaced apart from the electrode terminal 15 in the X direction. The electrode terminal 17 is provided spaced apart from the lead frame 10 in the Y direction. The end of the electrode terminal 17 on the side opposite to the lead frame 10 extends in the Y direction. Details of the electrode terminal 17 will be described later.

[0096] Details of the bonding terminal 14 will be described with reference to FIG. 12. FIG. 12 is an enlarged view showing a part of the internal configuration of the semiconductor device 1 (an enlarged view of the region R2 in FIG. 11). In the example of FIG. 12, the chip 11, the electrodes 12 and 12a, and the bonding member 13 are omitted.

[0097] As shown in FIG. 12, the bonding terminal 14 includes a base portion 14a and a terminal portion T1. The terminal portion T1 is provided at the end of the bonding terminal 14 on the side of the electrode terminal 17. The terminal portion T1 extends toward the electrode terminal 17 side. The terminal portion T1 has, for example, a substantially Y-shaped configuration in a top view. The terminal portion T1 includes bent portions 14b, a bridge portion 14c, bent portions 14f and 14g, and bonding portions 14h and 14i.

[0098] The bonding terminal 14 bends upward, for example, at the boundary between the base portion 14a and the bent portion 14b, and bends in the Y direction at the boundary between the bent portion 14b and the bridge portion 14c. The bonding terminal 14 bends downward, for example, at the boundary between the bridge portion 14c and the bent portion 14f, and bends in the Y direction at the boundary between the bent portion 14f and the bonding portion 14h. The bonding terminal 14 bends downward, for example, at the boundary between the bridge portion 14c and the bent portion 14g, and bends in the Y direction at the boundary between the bent portion 14g and the bonding portion 14i. The surface of the base portion 14a, the surface of the bridge portion 14c, the surface of the bonding portion 14h, and the surface of the bonding portion 14i are substantially parallel. The surface of the bridge portion 14c is located above the surface of the base portion 14a, the surface of the bonding portion 14h, and the surface of the bonding portion 14i. In other words, the bonding terminal 14 has a step in the Y direction.

[0099] The terminal portion T1 includes protruding portions 14d2 and 14e2 that protrude toward the electrode terminal 17 side. In other words, the end of the terminal portion T1 on the side of the electrode terminal 17 is divided into two. The protruding portion 14d2 and the protruding portion 14e2 are spaced apart from each other in the X direction. The protruding portion 14d2 includes a part of the bridge portion 14c, the bent portion 14f, and the bonding portion 14h. The protruding portion 14e2 includes a part of the bridge portion 14c, the bent portion 14g, and the bonding portion 14i. Note that the terminal portion T1 may include three or more protruding portions. In this case, these protruding portions are spaced apart from each other in the X direction.

[0100] Details of the electrode terminal 17 will be described with reference to FIG. 12.

[0101] As shown in FIG. 12, the electrode terminal 17 has, for example, a substantially U-shaped configuration in a top view. The electrode terminal 17 includes a base portion 17a, a bent portion 17b, and a bonding portion 17c.

[0102] The electrode terminal 17 bends upward, for example, at the boundary between the base portion 17a and the bent portion 17b, and bends in the Y direction at the boundary between the bent portion 17b and the joint portion 17c. The surface of the base portion 17a and the surface of the joint portion 17c are substantially parallel. The surface of the joint portion 17c is located above the surface of the base portion 17a. In other words, the electrode terminal 17 has a step in the Y direction.

[0103] The electrode terminal 17 includes protruding portions 17d and 17e that protrude toward the joint terminal 14 side (lead frame 10 side). In other words, the end portion of the electrode terminal 17 on the joint terminal 14 side is divided into two. The protruding portion 17d and the protruding portion 17e are spaced apart from each other in the X direction. Note that the electrode terminal 17 may include three or more protruding portions. In this case, these protruding portions are spaced apart from each other in the X direction.

[0104] As shown in FIG. 12, the end portion of the terminal portion T1 is provided on the electrode terminal 17. More specifically, the joint portion 14h of the terminal portion T1 is joined on the joint portion 17c of the electrode terminal 17. The joint portion 14i of the terminal portion T1 is joined on the joint portion 17c of the electrode terminal 17. In other words, the end portion of the protruding portion 14d2 of the terminal portion T1 is joined on the protruding portion 17d of the electrode terminal 17. The end portion of the protruding portion 14e2 of the terminal portion T1 is joined on the protruding portion 17e of the electrode terminal 17. That is, the terminal portion T1 and the electrode terminal 17 are joined by two joint surfaces. Hereinafter, the joint surface, the end portion of the terminal portion T1 in contact with the joint surface, and the end portion of the electrode terminal 17 in contact with the joint surface are collectively referred to as the "joint portion". Thereby, the terminal portion T1 is electrically connected to the electrode terminal 17. In other words, the joint terminal 14 is electrically connected to the electrode terminal 17 via the terminal portion T1.

[0105] Note that the lead frame 10 shown in FIG. 11, as well as the electrode terminals 15 and 17, are, for example, a part of a lead frame not shown, and are the remaining portions after the lead frame not shown is cut and removed in the manufacturing process.

[0106] FIG. 13 is a perspective view showing a part of the internal configuration of the semiconductor device 1 (a perspective view of the region R2 in FIG. 11). In the example of FIG. 13, the electrode 12 is omitted.

[0107] As shown in FIG. 13, an end portion of the protruding portion 14d2 is provided on the protruding portion 17d. The end portion of the protruding portion 14d2 is joined to the protruding portion 17d by a joining member 18 formed on the upper surface of the protruding portion 17d. The joining member 18 is, for example, solder. The joining member 18 electrically connects the terminal portion T1 and the electrode terminal 17. An end portion of the protruding portion 14e2 is provided on the protruding portion 17e. The end portion of the protruding portion 14e2 is joined to the protruding portion 17e by a joining member 18 formed on the upper surface of the protruding portion 17e.

[0108] The end face of the terminal portion T1 (the face of the terminal portion T1 that is sandwiched between the protruding portion 14d2 and the protruding portion 14e2 and faces the electrode terminal 17 (hereinafter also referred to as "face P9")) is located closer to the lead frame 10 side than the end face of the electrode terminal 17 (the face of the electrode terminal 17 that is sandwiched between the protruding portion 17d and the protruding portion 17e and faces the lead frame 10 (hereinafter also referred to as "face P10")).

[0109] Due to the above structure, the upper part of the space (hereinafter also referred to as "space S2") surrounded by the electrode terminal 17, the joining member 18, the terminal portion T1, the joining member 13, the electrode 12a, the chip 11, and the lead frame 10 is not blocked by the terminal portion T1 and the electrode terminal 17. When the face of the protruding portion 14d2 facing the protruding portion 14e2 is "face P11" and the face of the protruding portion 14e2 facing the protruding portion 14d2 is "face P12", the semiconductor device 1 has a region surrounded by the face P9, the face P10, the face P11, and the face P12. In other words, an opening (hereinafter also referred to as "opening OP2") is formed by the terminal portion T1 and the electrode terminal 17 (by the protruding portion 14d2, the protruding portion 14e2, the protruding portion 17d, and the protruding portion 17e). That is, the semiconductor device 1 has an opening OP2 formed by the terminal portion T1 and the electrode terminal 17. The region surrounded by the face P9, the face P10, the face P11, and the face P12 corresponds to the opening OP2. Also, both ends of the space S2 in the X direction are not blocked.

[0110] The cross-sectional structure of the semiconductor device 1 will be described with reference to FIG. 14. FIG. 14 is a cross-sectional view showing an example of the structure of the semiconductor device 1 (a cross-sectional view taken along line II-II of FIG. 10).

[0111] As shown in FIG. 14, the electrode terminal 17 is bent by the bent portion 17b so that the surface of the joint portion 17c is positioned above the surface of the base portion 17a.

[0112] A chip 11 is provided on the lead frame 10. An electrode 12a is provided on the chip 11. A bonding member 13 is provided on the electrode 12a. A bonding terminal 14 is provided on the bonding member 13. The bonding terminal 14 is bent by the bent portions 14b and 14g so that the surface of the bridge portion 14c is positioned above the surface of the base portion 14a and the surface of the joint portion 14i.

[0113] A joint portion 14i is provided on the joint portion 17c. The joint portion 14i is joined to the joint portion 17c by a joint member 18.

[0114] The lead frame 10, the chip 11, the electrode 12a, the bonding member 13, the bonding terminal 14, and the electrode terminal 17 are covered with a resin 30. The resin 30 is embedded in the space S2.

[0115] 2.2 Effects of the present embodiment In the present embodiment, the terminal portion T1 has the same configuration as the terminal portion T3 of the first embodiment. The electrode terminal 17 has the same configuration as the terminal portion T2 of the first embodiment. The terminal portion T1 and the electrode terminal 17 are joined in the same manner as the joining of the terminal portion T2 and the terminal portion T3 of the first embodiment. Therefore, similarly to the first embodiment, it is possible to suppress the strain at the joint portion between the terminal portion T1 and the electrode terminal 17 and to suppress the occurrence of peeling between the terminal portion T1 and the electrode terminal 17 at the joint portion.

[0116] In addition, in this embodiment, the semiconductor device 1 has an opening OP2 formed by the terminal portion T1 and the electrode terminal 17. Therefore, in the process of forming the resin 30, when the resin 30 is injected from the X direction, the resin 30 not only directly flows into the space S2, but also advances downward through the opening OP2 and flows into the space S2. Thus, similar to the first embodiment, the filling property of the resin 30 can be improved.

[0117] Furthermore, in this embodiment, similar to the first embodiment, peeling between the terminal portion T1 and the resin 30 and peeling between the electrode terminal 17 and the resin 30 can be suppressed.

[0118] From the above, with the configuration according to this embodiment, similar to the first embodiment, the yield of the semiconductor device can be improved.

[0119] 2.3 First Modification A semiconductor device according to the first modification of the second embodiment will be described. In the semiconductor device 1 according to the first modification of the second embodiment, the shape of the electrode terminal 17 is different from that of the second embodiment. In the following description, the description of the same configuration as that of the second embodiment will be omitted, and the configuration different from that of the second embodiment will be mainly described.

[0120] 2.3.1 Configuration of Semiconductor Device The configuration of the semiconductor device 1 according to this modification will be described with reference to FIG. 15. FIG. 15 is a perspective view showing a part of the internal configuration of the semiconductor device 1 (a figure corresponding to FIG. 13 of the second embodiment). In the example of FIG. 15, the electrode 12 is omitted.

[0121] As shown in FIG. 15, the electrode terminal 17 has, for example, a substantially rectangular shape when viewed from above. The end portion of the electrode terminal 17 on the bonding terminal 14 side is not divided into two or more.

[0122] The end of the protruding portion 14d2 is joined onto the electrode terminal 17. More specifically, the end of the protruding portion 14d2 is joined to the electrode terminal 17 by a joining member 18 formed on the upper surface of the electrode terminal 17. The end of the protruding portion 14e2 is joined onto the electrode terminal 17. More specifically, the end of the protruding portion 14e2 is joined to the electrode terminal 17 by a joining member 18 formed on the upper surface of the electrode terminal 17. That is, the terminal portion T1 and the electrode terminal 17 are joined at two joining surfaces.

[0123] The end face of the terminal portion T1 (the face P9 of the terminal portion T1 that is sandwiched between the protruding portion 14d2 and the protruding portion 14e2 and faces the electrode terminal 17) is located on the side of the lead frame 10 rather than the end face of the electrode terminal 17 (the face of the electrode terminal 17 that faces the lead frame 10 (hereinafter, also referred to as "face P13")).

[0124] With the above structure, the upper part of the space S2 is not blocked by the terminal portion T1 and the electrode terminal 17. The semiconductor device 1 has a region surrounded by the faces P9, P11, P12, and P13. In other words, an opening OP2 is formed by the terminal portion T1 and the electrode terminal 17 (by the protruding portion 14d2, the protruding portion 14e2, and the electrode terminal 17). That is, the semiconductor device 1 has an opening OP2 formed by the terminal portion T1 and the electrode terminal 17. The region surrounded by the faces P9, P11, P12, and P13 corresponds to the opening OP2. Also, both ends of the space S2 in the X direction are not blocked.

[0125] 2.3.2 Effects according to this modification According to this modification, the same effects as those of the second embodiment are achieved.

[0126] 2.4 Second modification A semiconductor device according to a second modification of the second embodiment will be described. In the semiconductor device 1 according to the second modification of the second embodiment, the shape of the terminal portion T1 of the bonding terminal 14 is different from that of the second embodiment. In the following description, descriptions of the same configurations as those of the second embodiment will be omitted, and mainly descriptions of the configurations different from those of the second embodiment will be given.

[0127] 2.4.1 Configuration of the semiconductor device The configuration of the semiconductor device 1 according to this modification will be described with reference to FIG. 16. FIG. 16 is a perspective view showing a part of the internal configuration of the semiconductor device 1 (a figure corresponding to FIG. 13 of the second embodiment). In the example of FIG. 16, the electrode 12 is omitted.

[0128] As shown in FIG. 16, the terminal portion T1 has, for example, a substantially rectangular shape in a top view. The terminal portion T1 includes a bent portion 14b, a bridge portion 14c, a bent portion 14j, and a joint portion 14k.

[0129] The bonding terminal 14 bends upward, for example, at the boundary between the base portion 14a and the bent portion 14b, and bends in the Y direction at the boundary between the bent portion 14b and the bridge portion 14c. The bonding terminal 14 bends downward, for example, at the boundary between the bridge portion 14c and the bent portion 14j, and bends in the Y direction at the boundary between the bent portion 14j and the joint portion 14k. The surface of the base portion 14a, the surface of the bridge portion 14c, and the surface of the joint portion 14k are substantially parallel. The surface of the bridge portion 14c is located above the surface of the base portion 14a and the surface of the joint portion 14k. In other words, the bonding terminal 14 has a step in the Y direction.

[0130] The end portion of the terminal portion T1 on the side of the electrode terminal 17 is not divided into two or more.

[0131] The end portion of the terminal portion T1 is joined onto the protruding portion 17d. More specifically, the end portion of the terminal portion T1 is joined to the protruding portion 17d by a joining member 18 formed on the upper surface of the protruding portion 17d. The end portion of the terminal portion T1 is joined onto the protruding portion 17e. More specifically, the end portion of the terminal portion T1 is joined to the protruding portion 17e by a joining member 18 formed on the upper surface of the protruding portion 17e. That is, the terminal portion T1 and the electrode terminal 17 are joined at two joining surfaces.

[0132] The end face of the terminal portion T1 (the face of the terminal portion T1 facing the electrode terminal 17 (hereinafter also referred to as "face P14")) is located closer to the lead frame 10 side than the end face of the electrode terminal 17 (the face P10 of the electrode terminal 17 sandwiched between the protruding portion 17d and the protruding portion 17e and facing the lead frame 10).

[0133] Due to the above structure, the upper part of the space S2 is not blocked by the terminal part T1 and the electrode terminal 17. Assuming that the surface of the protruding part 17d facing the protruding part 17e is "surface P15" and the surface of the protruding part 17e facing the protruding part 17d is "surface P16", the semiconductor device 1 has a region surrounded by the surface P10, the surface P14, the surface P15, and the surface P16. In other words, an opening OP2 is formed by the terminal part T1 and the electrode terminal 17 (by the terminal part T1, the protruding part 17d, and the protruding part 17e). That is, the semiconductor device 1 has an opening OP2 formed by the terminal part T1 and the electrode terminal 17. The region surrounded by the surface P10, the surface P14, the surface P15, and the surface P16 corresponds to the opening OP2. Also, both ends of the space S2 in the X direction are not blocked.

[0134] 2.4.2 Effects according to this modification According to this modification, the same effects as those of the second embodiment are achieved.

[0135] 3. Modifications, etc. As described above, the semiconductor device (1) according to the embodiment includes a first frame (10), a first chip (11) provided on the first frame, a second frame (20) spaced from the first frame in the first direction (X), a second chip (21) provided on the second frame, and a first bonding terminal (24) provided above the second chip and electrically connected to the second chip. The first frame (10) includes a first terminal part (T2) extending toward the second frame (20). The first bonding terminal (24) includes a second terminal part (T3) extending toward the first frame (10). The second terminal part (T3) includes a first protruding part (24d) and a second protruding part (24e) each protruding toward the first frame (10) and spaced from each other in a second direction (Y) intersecting the first direction (X). The end of the first protruding part (24d) and the end of the second protruding part (24e) are respectively bonded onto the first terminal part (T2).

[0136] Note that the embodiment is not limited to the form described above, and various modifications are possible.

[0137] Although some embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, as well as in the invention described in the claims and the equivalent scope thereof.

Description of Reference Numerals

[0138] 1... semiconductor device, 10... lead frame, 11... chip, 12... electrode, 12a... electrode, 13... bonding member, 14... bonding terminal, 15... electrode terminal, 16... wiring, 17... electrode terminal, 18... bonding member, 20... lead frame, 21... chip, 22... electrode, 22a... electrode, 23... bonding member, 24... bonding terminal, 25... electrode terminal, 26... wiring, 27... bonding member, 30... resin, 40... lead frame, 50... mold, T1, T2, T3... terminal portions

Claims

1. a first frame, a first chip provided on the first frame, a second frame spaced apart from the first frame in a first direction, a second chip provided on the second frame, a first bonding terminal provided above the second chip and electrically connected to the second chip and comprising: the first frame includes a first terminal portion extending toward the second frame side, the first bonding terminal includes a second terminal portion extending toward the first frame side, the second terminal portion includes a first protruding portion and a second protruding portion each protruding toward the first frame side and spaced apart from each other in a second direction intersecting the first direction, an end of the first protruding portion and an end of the second protruding portion are respectively bonded onto the first terminal portion, the first terminal portion includes a third protruding portion and a fourth protruding portion each protruding toward the second frame side and spaced apart from each other in the second direction, an end of the first protruding portion is bonded onto the third protruding portion, an end of the second protruding portion is bonded onto the fourth protruding portion, in the second direction, a length of the third protruding portion is longer than a length of the first protruding portion, and a length of the fourth protruding portion is longer than a length of the second protruding portion, an end of the third protruding portion and an end of the fourth protruding portion are sandwiched between the first protruding portion and the second protruding portion of the second terminal portion and are located closer to the first frame side than a first surface of the second terminal portion facing the first frame, a semiconductor device.

2. the first surface of the second terminal portion is located closer to the second frame side than a second surface of the first terminal portion facing the second frame, the semiconductor device according to Claim 1.

3. The semiconductor device according to claim 2, having a region surrounded by the first surface of the second terminal portion, the second surface of the first terminal portion, the third surface of the first protruding portion facing the second protruding portion, and the fourth surface of the second protruding portion facing the first protruding portion.

4. The second surface of the first terminal portion is sandwiched between the third protruding portion and the fourth protruding portion. The semiconductor device according to claim 2.

5. A first frame, A first chip provided on the first frame, A first bonding terminal provided above the first chip and electrically connected to the first chip, An electrode terminal spaced apart from the first frame in a first direction and comprising: The first bonding terminal includes a first terminal portion extending toward the electrode terminal side, The first terminal portion includes a first protruding portion and a second protruding portion that each protrude toward the electrode terminal side and are spaced apart from each other in a second direction intersecting the first direction, The end of the first protruding portion and the end of the second protruding portion are respectively bonded onto the electrode terminal, The electrode terminal includes a third protruding portion and a fourth protruding portion that each protrude toward the first frame side and are spaced apart from each other in the second direction, The end of the first protruding portion is bonded onto the third protruding portion, The end of the second protruding portion is bonded onto the fourth protruding portion, In the second direction, the length of the third protruding portion is longer than the length of the first protruding portion, and the length of the fourth protruding portion is longer than the length of the second protruding portion. The end of the third protruding portion and the end of the fourth protruding portion are sandwiched between the first protruding portion and the second protruding portion of the first terminal portion and are located closer to the electrode terminal side than the first surface of the first terminal portion facing the electrode terminal. Semiconductor device.

6. The first surface of the first terminal portion is located closer to the first frame side than the second surface of the electrode terminal facing the first frame. The semiconductor device according to claim 5.

7. The semiconductor device according to claim 6, having a region surrounded by the first surface of the first terminal portion, the second surface of the electrode terminal, the third surface of the first protrusion facing the second protrusion, and the fourth surface of the second protrusion facing the first protrusion.

8. The second surface of the electrode terminal is sandwiched between the third protrusion and the fourth protrusion. The semiconductor device according to claim 6.

9. A first frame, A first chip provided on the first frame, A second frame spaced apart from the first frame in a first direction, A second chip provided on the second frame, A first bonding terminal provided above the second chip and electrically connected to the second chip and comprising, The first frame includes a first terminal portion extending toward the second frame side, The first bonding terminal includes a second terminal portion extending toward the first frame side, The second terminal portion includes a first protrusion and a second protrusion each protruding toward the first frame side and spaced apart from each other in a second direction intersecting the first direction, The end of the first protrusion and the end of the second protrusion are respectively bonded onto the first terminal portion, The first terminal portion includes a third protrusion and a fourth protrusion each protruding toward the second frame side and spaced apart from each other in the second direction, The end of the first protrusion is bonded onto the third protrusion, The end of the second protrusion is bonded onto the fourth protrusion, An opening is formed by the first protrusion, the second protrusion, the third protrusion, and the fourth protrusion. The upper surface of the first protruding portion, the upper surface of the second protruding portion, the lower surface of the third protruding portion, the lower surface of the fourth protruding portion, and the opening are in contact with the resin. Semiconductor device.

10. A first frame, A first chip provided on the first frame, A first bonding terminal provided above the first chip and electrically connected to the first chip, An electrode terminal spaced apart from the first frame in a first direction and comprising, The first bonding terminal includes a first terminal portion extending toward the electrode terminal side, The first terminal portion includes a first protruding portion and a second protruding portion each protruding toward the electrode terminal side and spaced apart from each other in a second direction intersecting the first direction, The end portions of the first protruding portion and the second protruding portion are respectively bonded onto the electrode terminal, The electrode terminal includes a third protruding portion and a fourth protruding portion each protruding toward the first frame side and spaced apart from each other in the second direction, The end portion of the first protruding portion is bonded onto the third protruding portion, The end portion of the second protruding portion is bonded onto the fourth protruding portion, An opening is formed by the first protruding portion, the second protruding portion, the third protruding portion, and the fourth protruding portion, The upper surface of the first protruding portion, the upper surface of the second protruding portion, the lower surface of the third protruding portion, the lower surface of the fourth protruding portion, and the opening are in contact with the resin. Semiconductor device.

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