Detection device

Abstract

To provide a detector that can more easily deform the detection area.SOLUTION: A detector 1 has a flexible substrate 21, a plurality of optical sensors provided in the detection area AA, a terminal 831 provided at one end of the flexible substrate 21 to which external devices can be connected, a drive circuit 800, a selection circuit 810 and a reset circuit 820 provided on the flexible substrate 21 and located between the detection area AA and the terminal 831.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a detection device.

Background Art

[0002] There is known a detection device that uses a plurality of optical sensors to obtain a two-dimensional light and dark pattern (for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The detection device described in Patent Document 1 includes a light reception signal readout circuit connected to a plurality of signal lines that transmit outputs from a plurality of optical sensors, and a light reception sensor operation circuit that operates switching elements interposed between the plurality of optical sensors and the plurality of signal lines. The light reception signal readout circuit is provided along one side of a rectangular detection area in which a plurality of optical sensors are arranged. Therefore, when a deformation occurs such that the detection area is curved or bent about an axis intersecting the one side, the light reception signal readout circuit is likely to be damaged. Further, the light reception sensor operation circuit is provided along the other side of the rectangular detection area, which is orthogonal to the side along which the light reception signal readout circuit is provided. Therefore, when a deformation occurs such that the detection area is curved or bent about an axis intersecting the other side, the light reception sensor operation circuit is likely to be damaged. Thus, in the detection device described in Patent Document 1, it was difficult to provide the detection area in a deformable manner.

[0005] The present disclosure has been made in view of the above problems, and an object thereof is to provide a detection device that can make a detection area more deformable.

Means for Solving the Problems

[0006] A detection device according to one aspect of the present disclosure includes a flexible substrate, a plurality of optical sensors provided in a detection region of the flexible substrate, a terminal provided at one end of the flexible substrate and connectable to an external device, and a peripheral circuit provided on the flexible substrate and located between the detection region and the terminal.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5A

Figure 5B

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0008] Hereinafter, each embodiment of the present disclosure will be described with reference to the drawings. It should be noted that the disclosure is merely an example, and for those that can be easily conceived by those skilled in the art for appropriate modifications while maintaining the gist of the invention, they are naturally included in the scope of the present disclosure. In addition, for the purpose of making the description clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual aspect, but it is merely an example and does not limit the interpretation of the present disclosure. Also, in this specification and each figure, the same reference numerals are assigned to the same elements as those described above with respect to the previously shown figures, and detailed descriptions may be omitted as appropriate.

[0009] FIG. 1 is a schematic diagram showing the main configuration of the detection device 1. The detection device 1 includes a flexible substrate 21, a plurality of photodiodes PD (see FIG. 2) provided in the detection region AA, a drive circuit 800, a selection circuit 810, a reset circuit 820, and a terminal region 830.

[0010] The flexible substrate 21 is a substrate having flexibility. Specifically, the flexible substrate 21 is, for example, an FPC (Flexible Printed Circuits). The drive circuit 800 is a so-called gate driver. The drive circuit 800 is a circuit incorporating a shift register or the like that sequentially shifts the object to which a signal is applied.

[0011] FIG. 2 is a circuit diagram showing the relationship between a photodiode PD, a selection circuit 810, and a reset circuit 820. In the photodiode PD, the individual electrode 321 side functions as a cathode. In the photodiode PD, the common electrode 322 side functions as an anode. Note that the individual electrode 321 may function as an anode and the common electrode 322 may function as a cathode. In that case, the relationship between the functions of the first buffer layer 37 (electron transport layer, hole blocking layer) and the second buffer layer 38 (hole transport layer, electron blocking layer) described later is also reversed. Further, the photodiode PD is connected to one of the source or drain of the switching element Tr via the individual electrode 321. Further, the photodiode PD is connected in parallel with the capacitor element Ca between one of the source or drain of the switching element Tr and the common electrode 322.

[0012] The other of the source or drain of the switching element Tr is connected to any one of a plurality of signal lines SGL(n), SGL(n + 1),.... Hereinafter, unless otherwise noted, the description of the signal line SGL refers to any one of the plurality of signal lines SGL(n), SGL(n + 1),.... The gate of the switching element Tr is connected to any one of a plurality of scanning lines GCL(m), GCL(m + 1),.... Hereinafter, unless otherwise noted, the description of the scanning line GCL refers to any one of the plurality of scanning lines GCL(m), SGL(m + 1),.... Note that m and n are natural numbers.

[0013] The electric power generated when the photodiode PD receives light is stored in the capacitor element Ca connected in parallel with the photodiode PD. When a drive signal is applied to the gate of the switching element Tr, the capacitor element Ca and the signal line SGL are connected via the switching element Tr. Therefore, the electric power indicating the light detection result by the photodiode PD performed before the drive signal is applied to the gate of the switching element Tr is stored in the capacitor element Ca. Then, when a drive signal is applied to the gate of the switching element Tr, a signal generated according to the electric power of the capacitor element Ca is output via the switching element Tr and the signal line SGL. In this way, the photodiode PD functions as an optical sensor.

[0014] The selection circuit 810 is a circuit provided so that the target connected to the detection circuit 48 can be switched. Specifically, the selection circuit 810 has a plurality of switches TrS. One of the sources or drains of the plurality of switches TrS is connected to a different signal line SGL respectively. The other of the sources or drains of the plurality of switches TrS is connected to the detection circuit 48. The plurality of switches TrS are each given an operation signal ASW to the gate at different timings. As a result, the plurality of signal lines SGL are connected to the detection circuit 48 at different timings.

[0015] The detection circuit 48 is, for example, an analog front end circuit (AFE, Analog Front End). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplification unit 42 and an A / D conversion unit 43. The detection signal amplification unit 42 amplifies the detection signal Vdet. The A / D conversion unit 43 converts the analog signal output from the detection signal amplification unit 42 into a digital signal.

[0016] The detection circuit 48 is connected to the signal line SGL when the switch SSW is turned on. The detection signal amplification unit 42 of the detection circuit 48 converts the variation in current supplied from the signal line SGL into a variation in voltage and amplifies it. A reference voltage Vref having a fixed potential is input to the non-inverting input part (+) of the detection signal amplification unit 42, and the signal line SGL is connected to the inverting input terminal (-). In the present embodiment, a signal having the same potential as the reset potential line COM described later is input as the reference voltage Vref. Further, the detection signal amplification unit 42 has a capacitor element Cb and a reset switch RSW. The detection circuit 48 resets the charge of the capacitor element Cb when the reset switch RSW is turned on. The operation control of the detection circuit 48 is by a host described later.

[0017] As shown in FIG. 2 and FIG. 3 described later, the extending direction of the scanning line GCL and the extending direction of the signal line SGL intersect. Each scanning line GCL is shared by a plurality of switching elements Tr arranged along the extending direction of the scanning line GCL. Each signal line SGL is shared by a plurality of switching elements Tr arranged along the extending direction of the signal line SGL. The plurality of switching elements Tr are two-dimensionally arranged along the extending direction of the scanning line GCL and the extending direction of the signal line SGL. The individual electrodes 321, photodiodes PD, and capacitor elements Ca connected to each switching element Tr are also two-dimensionally arranged in the same manner as the plurality of switching elements Tr. Hereinafter, a region including one of the plurality of switching elements Tr and the individual electrode 321, photodiode PD, and capacitor element Ca connected to the one switching element Tr is defined as a partial detection region PAA. Also, when referring to the output from the partial detection region PAA, it refers to the output from the capacitor element Ca included in the partial detection region PAA.

[0018] The switching elements Tr sharing the scanning line GCL do not share the signal line SGL and are connected to different signal lines SGL respectively. The switching elements Tr sharing the signal line SGL do not share the scanning line GCL and are connected to different scanning lines GCL respectively. Therefore, by making the timings at which drive signals are applied to the scanning lines GCL different from each other, outputs from different partial detection regions PAA can be obtained via the plurality of signal lines SGL. Then, by operating such that the selection circuit 810 switches the signal line SGL connected to the detection circuit 48, outputs from different partial detection regions PAA are sequentially supplied to the detection circuit 48.

[0019] The reset circuit 820 resets the potential of the signal line SGL. Specifically, the reset circuit 820 has, for example, a plurality of switches TrR. One of the source or drain of the plurality of switches TrR is connected to a different signal line SGL respectively. In other words, one of the source or drain of one of the plurality of switches TrR is connected to each signal line SGL. The other of the source or drain of the plurality of switches TrR is connected to the reset potential line COM. A reset potential is applied to the reset potential line COM. The reset potential is a potential for resetting the signal line SGL after transmitting the output from the partial detection region PAA. The reset potential is, for example, the ground potential, but is not limited thereto, and may be other potentials preset according to the design of the detection device 1.

[0020] After the selection circuit 810 connects the plurality of signal lines SGL to the detection circuit 48 one by one respectively, the reset circuit 820 operates. Specifically, an operation signal RST2 is applied to the gates of the plurality of switches TrR included in the reset circuit 820. Thereby, the plurality of signal lines SGL and the reset potential line COM are connected, and the potential of the capacitive element Ca of the partial detection region PAA including the switching element Tr connected to the scanning line GCL to which the drive signal is applied, and the plurality of signal lines SGL, is reset.

[0021] The terminal region 830 enables connection between the detection device 1 and an external device (host). As shown in FIG. 1, a terminal 831 is provided in the terminal region 830. In FIG. 1, a plurality of terminals are provided in the terminal region 830, but the number of terminals 831 provided in the terminal region 830 may be one or more. In the embodiment of the present disclosure, the above-described detection circuit 48 is provided in the host. The terminal region 830 is interposed between the selection circuit 810 and the detection circuit 48. At least one of the terminals 831 of the terminal region 830 is connected to the wiring 811 extending from the selection circuit 810. The specific specifications such as the shape of the terminal region 830 correspond to the specific specifications of the wiring 481 extending from the switch SSW of the detection circuit 48.

[0022] Further, the terminal region 830 may include a terminal 831 of a signal input line connected to the drive circuit 800, the selection circuit 810, and the reset circuit 820. Various signals such as the operation signal ASW and the operation signal RST2 described above are supplied from the host via the signal input line. Further, when there are inputs and outputs of signals necessary for controlling the operation of the detection device 1 other than these, the wirings for the inputs and outputs are also connected to the terminal 831 of the terminal region 830.

[0023] As shown in FIG. 1, the terminal region 830 is a part of the flexible substrate 21 and is provided at one end of the peripheral region SA that borders the detection region AA. Further, the drive circuit 800, the selection circuit 810, and the reset circuit 820 are arranged between the detection region AA and the terminal region 830. Further, as described above, the flexible substrate 21 has flexibility. Therefore, the side of the detection region AA with respect to the drive circuit 800 can be deformed such as being curved within a range where the non-deformation range ND where the drive circuit 800, the selection circuit 810, the reset circuit 820, and the terminal region 830 are provided is not deformed. For example, a part of the flexible substrate 21 including the detection region AA can be deformed so as to round the detection region AA in a cylindrical shape centered on the deformation axis SH shown in FIG. 1.

[0024] The drive circuit 800 supplies a drive signal to the scanning line GCL. The drive circuit 800 is connected to the scanning line GCL via a connection line GCC (see FIG. 3). Hereinafter, the connection between the drive circuit 800 and the scanning line GCL via the connection line GCC will be described with reference to FIG. 3.

[0025] FIG. 3 is a schematic diagram showing the relationship between the coordinates of a plurality of partial detection regions PAA included in the detection region AA, a signal line SGL, a scanning line GCL, and a connection line GCC. In the description with reference to FIG. 3, an 8×8 partial detection region PAA arranged in a matrix will be described as an example, but the number and arrangement of the partial detection regions PAA are not limited to this and can be changed as appropriate. Also, in the description with reference to FIG. 3, along one of the arrangement directions of the partial detection regions PAA, X(1), X(2),..., X(8) are assigned as X coordinates. Also, when described as the X direction, it is the one arrangement direction. Also, in the description with reference to FIG. 3, along the other of the arrangement directions of the partial detection regions PAA, Y(1), Y(2),..., Y(8) are assigned as Y coordinates. Also, when described as the Y direction, it is the other arrangement direction. Note that when described as the Z direction, it is a direction orthogonal to the X direction and the Y direction.

[0026] When explaining the position constituted by the combination of the X coordinate and the Y coordinate, it is described as (X, Y) = (p, q). p and q are any natural numbers within the range from 1 to 8. Note that when the number of arrangements of the partial detection regions PAA in the X direction is another natural number P other than 8, p is any natural number within the range from 1 to P. Also, when the number of arrangements of the partial detection regions PAA in the Y direction is another natural number Q other than 8, q is any natural number within the range from 1 to Q. For example, when described as the configuration of (X, Y) = (1, 1), it refers to the configuration of the position that is X(1) and also Y(1).

[0027] As shown in FIG. 3, the signal line SGL is provided for each X coordinate. Specifically, SGL(p) is provided at X(p) and extends in the Y direction. For example, the signal line SGL(1) is provided at X(1). The partial detection regions PAA arranged in the Y direction at the same X coordinate share the signal line SGL provided at the X coordinate. That is, the switching elements Tr (see FIG. 2) included in the partial detection region PAA whose X coordinate is X(p) share the signal line SGL(p).

[0028] As shown in FIG. 3, the scanning lines GCL are provided for each Y coordinate. Specifically, SGL(q) is provided at Y(q) and extends in the X direction. For example, the scanning line GCL(1) is provided at Y(1). The partial detection regions PAA arranged in the X direction at the same Y coordinate share the scanning line GCL provided at that Y coordinate. That is, the switching elements Tr (see FIG. 2) included in the partial detection region PAA whose Y coordinate is Y(q) share the scanning line GCL(q).

[0029] As shown in FIG. 3, the drive circuit 800 is connected to the scanning line GCL(q) via the connection line GCC(q). The scanning line GCL(q) and the connection line GCC(q) are connected via the contact CP(q). For example, the scanning line GCL(1) and the connection line GCC(1) are connected via the contact CP(1). Then, the scanning line GCL(1) and the drive circuit 800 are connected via the connection line GCC(1).

[0030] The connection line GCC extends in the Y direction. In the example shown in FIG. 3, since the number of arrangements of the partial detection regions PAA in the X direction and the number of arrangements of the partial detection regions PAA in the Y direction are the same, the connection line GCC is provided for each X coordinate. In the example shown in FIG. 3, the connection lines GCC(1), GCC(2),..., GCC(8) are illustrated. When referring to the connection line GCC, it is any one of the connection lines GCC(1),..., GCC(q).

[0031] The contact CP(q) shown in FIG. 3 connects the scanning line GCL(q) and the connection line GCC(q) within the range of the partial detection region PAA where (X, Y) = (q, q). Specifically, the contact CP(q) shown in FIG. 3 is provided at a position overlapping with the individual electrode 321 included in the partial detection region PAA where (X, Y) = (q, q) in a plan view. The plan view is a viewpoint of viewing the detection region AA from the front. For example, the contact CP(1) is provided at a position overlapping with the individual electrode 321 included in the partial detection region PAA where (X, Y) = (1, 1) in a plan view.

[0032] Next, a stacked structure including a photodiode PD and a switching element Tr provided in the partial detection region PAA will be described with reference to FIG. 4.

[0033] FIG. 4 is a schematic diagram showing a stacked structure formed by a configuration stacked on one surface side of the flexible substrate 21. On one surface side of the flexible substrate 21, in order from the flexible substrate 21 side, an undercoat layer 221, a light-shielding metal 222, an undercoat layer 223, a semiconductor 224, a gate insulating film 225, a gate metal 226, an insulating film 227, a metal layer, a planarization film 23, a barrier layer 231, an individual electrode 321, a first buffer layer 37, a photoelectric conversion layer 31, a second buffer layer 38, a common electrode 322, and a sealing film 24 are stacked in the Z direction.

[0034] The undercoat layers 221 and 223, the gate insulating film 225, the insulating film 227, the planarization film 23, and the sealing film 24 exhibit insulating properties. Therefore, no current flows between components blocked by any of the undercoat layers 221 and 223, the gate insulating film 225, the insulating film 227, the planarization film 23, and the sealing film 24.

[0035] As a specific configuration example, the undercoat layers 221 and 223 are, for example, coat layers formed of an epoxy resin composition, but may be inorganic films. Further, the gate insulating film 225 and the insulating film 227 are insulating layers formed of a nitride such as silicon nitride, for example. The planarization film 23 is an organic planarization film formed of any of acrylic, polyimide, and polyacrylamide, for example. The sealing film 24 is a sealing film formed using a polymer such as parylene (registered trademark), for example.

[0036] The light-shielding metal 222 is located on the flexible substrate 21 side with respect to the semiconductor 224 and exhibits light-shielding properties. Therefore, most of the light from the flexible substrate 21 side is blocked by the light-shielding metal 222 and hardly reaches the semiconductor 224. An undercoat layer 223 is interposed between the light-shielding metal 222 and the semiconductor 224.

[0037] The semiconductor 224 is a semiconductor interposed between the source and the drain of the switching element Tr. The gate metal 226 functions as the gate of the semiconductor 224. A gate insulating film 225 is interposed between the semiconductor 224 and the gate metal 226.

[0038] The above-described metal layer includes SD metals 2281 and 2282. The SD metal 2281 is the other of the source or the drain of the switching element Tr and is connected to the signal line SGL. The SD metal 2282 is one of the source or the drain of the switching element Tr and is connected to the individual electrode 321. The SD metal 2281 is formed so as to fill the contact hole CH1 formed in the gate insulating film 225 and the insulating film 227 and is connected to the semiconductor 224. The SD metal 2282 is formed so as to fill the contact hole CH2 formed in the gate insulating film 225 and the insulating film 227 and is connected to the semiconductor 224. The SD metal 2281 and the SD metal 2282 are connected via the semiconductor 224. Note that the gate metal 226 is positioned between the SD metal 2281 and the SD metal 2282 and is insulated from the SD metal 2281 and the SD metal 2282 by the gate insulating film 225 and the insulating film 227.

[0039] Note that the specific compositions of the semiconductor 224, the metal layer including the SD metals 2281 and 2282, and the gate metal 226 correspond to the semiconductor material and the wiring material employed in the switching element Tr that functions as a TFT (thin film transistor). The semiconductor 224 is, for example, a-Si:H (hydrogenated amorphous silicon), the metal layer is, for example, aluminum (Al), and the gate metal 226 is polysilicon or aluminum (Al), but is not limited to this example.

[0040] The individual electrode 321 is formed along the inner peripheral surface of the flattening film 23 laminated on the SD metal 2282 and the contact hole CH3 formed in the barrier layer 231. At the bottom of the contact hole CH3, the individual electrode 321 and the SD metal 2282 are connected. Further, the individual electrode 321 extends from the contact hole CH3 along the barrier layer 231 between the barrier layer 231 and the photoelectric conversion layer 31. As shown in FIG. 3, the individual electrode 321 is provided for each partial detection region PAA. That is, the plurality of photodiodes PD have individual individual electrodes 321.

[0041] The characteristics (e.g., voltage-current characteristics and resistance value) of the photoelectric conversion layer 31 change according to the irradiated light. An organic material is used as the material of the photoelectric conversion layer 31. Specifically, as the photoelectric conversion layer 31, for example, C which is a low molecular organic material 60 (Fullerene), PCBM (Phenyl C61-butyric acid methyl ester), CuPc (Copper phthalocyanine), F 16 CuPc (Fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), PDI (Derivative of Perylene) and the like can be used.

[0042] The photoelectric conversion layer 31 can be formed by a vapor deposition type (Dry Process) using these low molecular organic materials. In this case, the photoelectric conversion layer 31 is, for example, a laminated film of CuPc and F 16 a laminated film of CuPc, or a laminated film of rubrene and C 60It may be a laminated film with [something not specified]. The photoelectric conversion layer 31 can also be formed by a wet process. In this case, a material combining the above-mentioned low-molecular organic material and high-molecular organic material is used for the photoelectric conversion layer 31. As the high-molecular organic material, for example, P3HT (poly(3-hexylthiophene)), F8BT (F8-alt-benzothiadiazole), etc. can be used. The photoelectric conversion layer 31 can be a film in a state where P3HT and PCBM are mixed, or a film in a state where F8BT and PDI are mixed.

[0043] The first buffer layer 37 is formed so as to cover the individual electrode 321. The second buffer layer 38 is formed between the photoelectric conversion layer 31 and the common electrode 322. The first buffer layer 37 and the second buffer layer 38 are provided to facilitate the holes and electrons generated in the photoelectric conversion layer 31 to reach the common electrode 322 or the individual electrode 321. The first buffer layer 37 functions as an electron transport layer (hole-blocking layer). The second buffer layer 38 functions as a hole transport layer (electron-blocking layer).

[0044] As the material of the first buffer layer 37, titanium oxide (TiOx), etc. can be used, and as the material of the second buffer layer 38, tungsten oxide (WO3), yttrium oxide (Y2O3), etc. can be used. For the p-type semiconductor layer 32, for example, P3HT among the above-mentioned organic materials is used. For the n-type semiconductor layer 33, for example, PCBM among the above-mentioned organic materials is used.

[0045] The common electrode 322 is formed so as to cover the photoelectric conversion layer 31. The common electrode 322 covers the entire detection region AA in a plan view. That is, the plurality of photodiodes PD share the common electrode 322. The sealing film 24 is formed so as to cover the common electrode 322. The sealing film 24 covers the entire detection region AA in a plan view.

[0046] The individual electrode 321 and the common electrode 322 face each other with the photoelectric conversion layer 31 therebetween. Due to the photovoltaic effect generated by the photoelectric conversion layer 31 between the individual electrode 321 and the common electrode 322, the individual electrode 321, the common electrode 322, and the photoelectric conversion layer 31 in each partial detection region PAA function as a photodiode PD. For the individual electrode 321, a metal material such as silver (Ag) or aluminum (Al) is used, for example. Alternatively, the individual electrode 321 may be an alloy material containing at least one of these metal materials. For the common electrode 322, a light-transmissive conductive material such as ITO (Indium Tin Oxide) is used, for example.

[0047] Next, with reference to FIGS. 5A and 5B, the positional relationship among the signal line SGL, the scanning line GCL, and the connection line GCC in the vicinity of the switching element Tr provided between the individual electrode 321 and the flexible substrate 21 in a plan view will be described.

[0048] FIG. 5A is a plan view showing the positional relationship among the signal line SGL, the scanning line GCL, and the connection line GCC in the vicinity of the switching element Tr within the enlarged view region CU shown in FIG. 3. FIG. 5B is a further enlarged view of the 3×3 configuration shown in FIG. 5A, where the X coordinate value and the Y coordinate value are the same (p). In FIG. 5B, the same dot pattern is given to the configuration in the same layer as the gate metal 226. Hereinafter, the positional relationship among the signal line SGL, the scanning line GCL, and the connection line GCC in the vicinity of the switching element Tr will be described using the configurations of these in the partial detection region PAA at (X,Y)=(1,1) as an example, but the same applies to the partial detection regions PAA at other XY coordinates.

[0049] The scanning line GCL(1) indicated by the dashed line in Fig. 5A is connected via the gate metal 226 on the flexible substrate 21 side of the individual electrode 321 at (X, Y) = (1, 1). More specifically, the metal layer formed as the scanning line GCL(1) is divided in the X direction on the flexible substrate 21 side of the individual electrode 321. The scanning line GCL(1) is connected via the gate metal 226 within the region overlapping the individual electrode 321 in a plan view. Generally described, the scanning line GCL(q) is connected via the gate metal 226 on the flexible substrate 21 side of the individual electrode 321 at (X, Y) = (p, q).

[0050] In the present disclosure, the metal layer in which the scanning line GCL(1) is formed is the same as the metal layer in which the SD metal 2281 is formed.

[0051] The signal line SGL(1) indicated by the dashed line in Fig. 5A is continuous via the SD metal 2281 and the detour portion 2880 on the flexible substrate 21 side of the individual electrode 321 at (X, Y) = (1, 1). The detour portion 2880 indicated by the dashed line bends so as to bypass the gate metal 226 in a plan view. The detour portion 2880 at (X, Y) = (1, 1) extends from the Y(2) side on the flexible substrate 21 side of the individual electrode 321 at (X, Y) = (1, 1), bypasses the gate metal 226, and is connected to the SD metal 2281. Therefore, the signal line SGL(1) is continuous at a position not overlapping the gate metal 226 in a plan view by passing through the positions of the SD metal 2281 and the detour portion 2880. Generally described, the signal line SGL(p) is continuous via the SD metal 2281 and the detour portion 2880 on the flexible substrate 21 side of the individual electrode 321 at (X, Y) = (p, q). Note that the signal line SGL and the detour portion 2880 are the same as the metal layer in which the SD metal 2281 is formed.

[0052] The SD metal 2282 is located at a position facing the semiconductor 224 with the gate metal 226 sandwiched therebetween in a plan view on the flexible substrate 21 side of the individual electrode 321. As described with reference to Fig. 4, the SD metal 2282 and the individual electrode 321 are connected.

[0053] The connection line GCC(1) indicated by the solid line in FIG. 5A overlaps with the signal line SGL(1) outside the individual electrode 321 in a plan view. Also, the connection line GCC(1) bends so as to bypass the gate metal 226 on the opposite side of the bypass portion 2880 with the gate metal 226 interposed therebetween inside the individual electrode 321 in a plan view. Therefore, the connection line GCC does not contact the gate metal 226. Generally described, the connection line GCC(q) overlaps with the signal line SGL(q) outside the individual electrode 321 in a plan view. Also, the connection line GCC(q) bends so as to bypass the gate metal 226 on the opposite side of the bypass portion 2880 with the gate metal 226 interposed therebetween inside the individual electrode 321 in a plan view.

[0054] Note that the connection line GCC is formed in the same layer as the gate metal 226. Therefore, the connection line GCC of the present disclosure is formed closer to the flexible substrate 21 side than the metal layer in which the signal line SGL is formed. The insulation film 227 insulates between the scanning line GCL and the gate metal 226 and between the connection line GCC and the signal line SGL.

[0055] FIG. 6 is a cross-sectional view taken along line A-A' of FIG. 5A. As shown in FIG. 6, the contact CP(q) is formed continuously with the scanning line GCL(q) so as to fill the contact hole CH4 formed in the insulating film 227 covering the gate metal 226. More specifically, contact holes CH4 are formed in the insulating film 227 at the positions of the contacts CP(1), CP(2), and CP(3) shown in FIG. 5A. As an example, the position of the contact CP(1) shown in FIG. 5A is the position where the connection line GCC(1) provided on the flexible substrate 21 side of the individual electrode 321 at (X, Y) = (1, 1) and the scanning line GCL(1) intersect in a plan view. Generally described, the position of the contact CP(q) is the position where the connection line GCC(q) provided on the flexible substrate 21 side of the individual electrode 321 at (X, Y) = (q, q) and the scanning line GCL(q) intersect in a plan view. Then, by forming the scanning lines GCL(1), GCL(2), and GCL(3) so as to overlap the contact hole CH4, the scanning lines GCL(1), GCL(2), and GCL(3) and the contacts CP(1), CP(2), and CP(3) are formed. Note that the contacts CP(q) other than the contacts CP(1), CP(2), and CP(3) are also formed in the same manner as the contacts CP(1), CP(2), and CP(3) at the position where the connection line GCC(q) and the scanning line GCL(q) intersect in a plan view on the flexible substrate 21 side of the individual electrode 321 at (X, Y) = (q, q) so as to connect the connection line GCC(q) and the scanning line GCL(q).

[0056] Note that, as shown in FIG. 6, the scanning line GCL(q + 1) (or the scanning line GCL(q - 1)) adjacent to the scanning line GCL(q) that overlaps the position where the contact CP(q) is formed does not connect to the scanning line GCL(q + 1) (or the scanning line GCL(q - 1)) within the X coordinate (X(q)) where the contact CP(q) is formed.

[0057] FIG. 7 is a schematic diagram showing the main configuration of a general detection device 1000. The detection device 1 includes a substrate 1021, a detection region AA2, a drive circuit 1800, a selection circuit 1810, a reset circuit 1820, and a terminal region 1830. The substrate 1021 has the same configuration as the flexible substrate 21. In the detection region AA2, photodiodes PD similar to the photodiodes PD provided in the above-described detection region AA are two-dimensionally arranged. However, the gates of the switching elements connected to the photodiodes PD provided in the detection region AA2 are directly connected to the drive circuit 1800 via the scanning line GCL without passing through the three-dimensional connection of the above-described connection line GCC and the scanning line GCL. The drive circuit 1800 is directly connected to the scanning line GCL without passing through the above-described connection line GCC, and has the same configuration as the drive circuit 800 except that it is provided at a position other than between the detection region AA and the drive circuit 1800. The selection circuit 1810 has the same configuration as the above-described selection circuit 810. The reset circuit 1820 has the same configuration as the reset circuit 820 except that it is provided at a position facing the selection circuit 1810 with the detection region AA interposed therebetween. The terminal region 1830 has the same configuration as the above-described terminal region 830.

[0058] As shown in FIG. 7, in a configuration where the drive circuit 1800 is provided along one of the two orthogonal sides of the rectangular detection region AA2, and the selection circuit 1810, the reset circuit 1820, and the terminal region 1830 are provided along the other side, even if the substrate 1021 is flexible, it is difficult to deform the detection region AA2. If the detection region AA2 is deformed, among the components such as circuits like the drive circuit 1800, the selection circuit 1810, and the reset circuit 1820 and interfaces like the terminal region 1830, the components with a curved mounting surface due to the deformation of the detection region AA2 may be damaged. On the other hand, according to the above-described detection device 1, as exemplified by the cylindrical curvature centered on the deformation axis SH, the degree of freedom of deformation within a range that does not affect the non-deformation range ND is higher.

[0059] As described above, according to the present disclosure, the detection device 1 includes a flexible substrate (flexible substrate 21), a plurality of optical sensors (photodiodes PD) provided in a detection region (detection region AA) of the flexible substrate, a terminal (terminal 831) provided at one end of the flexible substrate and capable of connecting to an external device, and a peripheral circuit (driving circuit 800, selection circuit 810, etc.) provided on the flexible substrate and located between the detection region and the terminal.

[0060] Thus, as long as there is no interference between the detection region (detection region AA) and the terminal (terminal 831) (for example, in the non-deformation range ND), even if the detection region is deformed, the peripheral circuit (driving circuit 800, selection circuit 810, etc.) and the terminal will not be affected. Therefore, according to the present disclosure, the detection region can be made more deformable.

[0061] Further, the peripheral circuit is provided so as to be able to switch the connection relationship with a plurality of signal lines (signal lines SGL) for transmitting outputs from a plurality of optical sensors (photodiodes PD), and includes a selection circuit (selection circuit 810) that establishes a transmission path between the plurality of signal lines and one of them, and a driving circuit (driving circuit 800) that supplies a driving signal to the gates of a plurality of switching elements (switching elements Tr) interposed between the plurality of optical sensors and the plurality of signal lines. Thereby, it is possible to achieve both making the detection region (detection region AA) more deformable and providing the selection circuit and the driving circuit necessary for the operation of the plurality of optical sensors on the flexible substrate (flexible substrate 21).

[0062] Further, the peripheral circuit includes a reset circuit (reset circuit 820) for resetting the optical sensor (photodiode PD). Thereby, it is possible to achieve both making the detection region (detection region AA) more deformable and providing the reset circuit on the flexible substrate (flexible substrate 21).

[0063] In the detection device 1, among the peripheral regions (peripheral region SA) of the flexible substrate (flexible substrate 21) located around the detection region (detection region AA), a selection circuit (selection circuit 810), a drive circuit (drive circuit 800), and a reset circuit (reset circuit 820) are not provided at positions other than between the detection region and the terminal (terminal 831). As a result, the restriction on the deformation of the detection region that occurs when at least one of the selection circuit, the drive circuit, or the reset circuit is provided at a position other than between the detection region and the terminal does not occur. Therefore, the detection region can be made more easily deformable.

[0064] The detection device 1 further includes a plurality of scanning lines (scanning line GCL) connected to the gates of a plurality of switching elements (switching element Tr), and a plurality of connection lines (connection line GCC) that individually connect the plurality of scanning lines and the drive circuit (drive circuit 800). The scanning lines extend in one direction (X direction) among the arrangement directions of the plurality of switching elements arranged in a matrix, and are connected to the gates of the switching elements arranged along the one direction. The plurality of scanning lines are arranged in the other direction (Y direction) among the arrangement directions of the plurality of switching elements. The connection lines extend in the other direction. The plurality of connection lines are arranged in the one direction. This makes it easier to arrange the drive circuit between the detection region (detection region AA) and the terminal (terminal 831).

[0065] Also, as shown in FIG. 3, one end of the connection line (connection line GCC) is located farther from the drive circuit than the scanning line (scanning line GCL(1)) that is the farthest from the drive circuit among the plurality of scanning lines (scanning line GCL). As a result, all of the plurality of scanning lines are arranged in a row between the drive circuit and one end of the connection line. Therefore, the connection relationship between the drive circuit and the plurality of scanning lines by the plurality of connection lines can be more reliably established.

[0066] Also, a signal line (signal line SGL) and a connection line (connection line GCC) overlap in an insulated state within a detection region (detection region AA). This makes it easier to complete the wiring of the signal line and the connection line within the detection region. Therefore, the peripheral region (peripheral region SA) of the flexible substrate (flexible substrate 21) can be made narrower.

[0067] Also, a scanning line (scanning line GCL) has an intersection portion (gate metal 226) that intersects the signal line (signal line SGL) in an insulated state, and portions other than the intersection portion are formed in the same layer as the signal line in a laminated structure formed on the flexible substrate (flexible substrate 21). This can reduce the number of layers of the laminated structure compared to the case where the portion of the scanning line excluding the intersection portion and the signal line are formed in different layers.

[0068] Also, an optical sensor (photodiode PD) includes a photoelectric conversion layer (photoelectric conversion layer 31) that generates a photovoltaic effect, buffer layers (first buffer layer 37, second buffer layer 38) that promote the movement of electrons or holes generated according to the electric power generated in the photoelectric conversion layer, and two electrodes (individual electrode 321, common electrode 322) that are in contact with the photoelectric conversion layer through the buffer layer and face each other with the photoelectric conversion layer interposed therebetween. One of the two electrodes (individual electrode 321) overlaps in an insulated state with the intersection portion (gate metal 226). This allows the optical sensor, the scanning line (scanning line GCL), the signal line (signal line SGL), and the intersection portion (gate metal 226) to be stacked three-dimensionally. Therefore, it becomes easier to complete the wiring of the scanning line and the signal line within the detection region (detection region AA). Therefore, the peripheral region (peripheral region SA) of the flexible substrate (flexible substrate 21) can be made narrower.

[0069] Note that the reset circuit 820 does not necessarily have to be formed on the flexible substrate 21. For example, the reset circuit 820 may be provided in a host and connected to the detection device 1 in which the reset circuit 820 is omitted via the terminal 831.

[0070] Also, in the above description, both P and Q are 8 and equal, but P and Q do not have to be equal, or at least one of them may be another natural number other than 8. When P is greater than Q, a part of the signal line SGL does not overlap with the connection line GCC. When P is smaller than Q, a part of the connection line GCC does not overlap with the signal line SGL.

[0071] Also, regarding other operational effects brought about by the aspects described in this embodiment, those that are obvious from the description in this specification or can be appropriately conceived by those skilled in the art are naturally understood to be brought about by this disclosure.

Explanation of Reference Numerals

[0072] 1 Detection device 226 Gate metal 321 Individual electrode 322 Common electrode 800 Driving circuit 810 Selection circuit 820 Reset circuit 831 Terminal AA Detection region GCC Connection line GCL Scanning line PD Photodiode SA Peripheral region SGL Signal line Tr Switching element

Claims

1. A flexible substrate; A plurality of optical sensors provided in a detection area of the flexible substrate; A terminal provided at one end of the flexible substrate and connectable to an external device; A peripheral circuit provided on the flexible substrate and located between the detection area and the terminal; A plurality of switching elements, one of the source or drain being individually connected to the plurality of optical sensors, and the other of the source or drain being connected to any one of a plurality of signal lines; A plurality of scanning lines connected to gates of the plurality of switching elements; A plurality of connection lines individually connected to the plurality of scanning lines; Comprising: The plurality of scanning lines extend in one direction and are arranged in the other direction; The plurality of signal lines and the plurality of connection lines extend in the other direction and are arranged in the one direction, and are connected to the peripheral circuit; The signal lines and the connection lines overlap in an insulated state within the detection area; A detection device.

2. A flexible substrate; A plurality of optical sensors provided in a detection area of the flexible substrate; A terminal provided at one end of the flexible substrate and connectable to an external device; A peripheral circuit provided on the flexible substrate and located between the detection area and the terminal, comprising: The peripheral circuit is provided such that the connection relationship with a plurality of signal lines for transmitting outputs from the plurality of optical sensors can be switched, and a selection circuit for establishing a transmission path between the peripheral circuit and one of the plurality of signal lines; A drive circuit for applying a drive signal to gates of a plurality of switching elements interposed between the plurality of optical sensors and the plurality of signal lines; A reset circuit for resetting the optical sensors, including: The selection circuit, the drive circuit, and the reset circuit are not provided at positions other than between the detection area and the terminal in a peripheral area of the flexible substrate located around the detection area; A plurality of scanning lines connected to gates of the plurality of switching elements; A plurality of connection lines individually connecting the plurality of scanning lines and the drive circuit; The scanning lines extend in one direction which is one of the arrangement directions of the plurality of switching elements arranged in a matrix, and are connected to gates of the switching elements arranged along the one direction; The plurality of scanning lines are arranged in the other direction which is the other of the arrangement directions of the plurality of switching elements; The connection lines extend in the other direction; The plurality of connection lines are arranged in the one direction; ​ The signal line and the connection line overlap in an insulated state within the detection region. Detection device. **Claim 3** The scanning line has an intersection portion that intersects the signal line in an insulated state, and portions other than the intersection portion are formed in the same layer as the signal line in a stacked structure formed on the flexible substrate. The detection device according to claim 1 or 2. **Claim 4** A flexible substrate, A plurality of optical sensors provided in a detection region of the flexible substrate, A terminal provided at one end of the flexible substrate and capable of connecting to an external device, A peripheral circuit provided on the flexible substrate and located between the detection region and the terminal, A plurality of switching elements in which one of the source or drain is individually connected to the plurality of optical sensors, and the other of the source or drain is connected to any one of the plurality of signal lines, A plurality of scanning lines connected to the gates of the plurality of switching elements, A plurality of connection lines individually connected to the plurality of scanning lines, Comprising The plurality of scanning lines extend in one direction and are arranged in the other direction, The plurality of signal lines and the plurality of connection lines extend in the other direction and are arranged in the one direction, and are connected to the peripheral circuit, The scanning line has an intersection portion that intersects the signal line in an insulated state, and portions other than the intersection portion are formed in the same layer as the signal line in a stacked structure formed on the flexible substrate. Detection device. **Claim 5** A flexible substrate, A plurality of optical sensors provided in a detection region of the flexible substrate, A terminal provided at one end of the flexible substrate and capable of connecting to an external device, A peripheral circuit provided on the flexible substrate and located between the detection region and the terminal, comprising The peripheral circuit is A selection circuit provided so as to be able to switch the connection relationship with a plurality of signal lines for transmitting outputs from the plurality of optical sensors and establish a transmission path with one of the plurality of signal lines, A drive circuit that supplies a drive signal to the gates of a plurality of switching elements interposed between the plurality of optical sensors and the plurality of signal lines, A reset circuit that resets the optical sensors, and includes Among the peripheral regions of the flexible substrate located around the detection region, the selection circuit, the drive circuit, and the reset circuit are not provided at positions other than between the detection region and the terminal, A plurality of scanning lines connected to the gates of the plurality of switching elements, A plurality of connection lines for individually connecting the plurality of scanning lines and the drive circuit, The scanning lines extend in one direction which is one of the arrangement directions of the plurality of switching elements arranged in a matrix, and are connected to the gates of the switching elements arranged along the one direction, The plurality of scanning lines are arranged in the other direction which is the other of the arrangement directions of the plurality of switching elements, The connection lines extend in the other direction, The plurality of connection lines are arranged in the one direction, The scanning lines have a crossing portion that crosses the signal lines in an insulated state, and portions other than the crossing portion are formed in the same layer as the signal lines in a laminated structure formed on the flexible substrate, Detection device. **Claim 6** The optical sensor, A photoelectric conversion layer that generates a photovoltaic effect, A buffer layer that promotes the movement of electrons or holes generated in response to the power generated in the photoelectric conversion layer, Two electrodes that are in contact with the photoelectric conversion layer through the buffer layer and sandwich the photoelectric conversion layer, One of the two electrodes overlaps in an insulated state with the crossing portion, The detection device according to any one of claims 3 to 5. **Claim 7** The peripheral circuit, A selection circuit provided so as to be able to switch the connection relationship with the plurality of signal lines for transmitting the outputs from the plurality of optical sensors, and establishing a transmission path between the selection circuit and one of the plurality of signal lines, A drive circuit that applies a drive signal to the gates of the plurality of switching elements interposed between the plurality of optical sensors and the plurality of signal lines, The detection device according to claim 1 or 4. **Claim 8** The peripheral circuit, Includes a reset circuit for resetting the optical sensor, The detection device according to claim 7. **Claim 9** A plurality of scanning lines connected to the gates of the plurality of switching elements, A plurality of connection lines for individually connecting the plurality of scanning lines and the drive circuit, The scanning lines extend in one direction which is one of the arrangement directions of the plurality of switching elements arranged in a matrix, and are connected to the gates of the switching elements arranged along the one direction, The plurality of scanning lines are arranged in the other direction which is the other of the arrangement directions of the plurality of switching elements, The connection lines extend in the other direction, The plurality of connection lines are arranged in the one direction, The detection device according to claim 7 or 8. **Claim 10** One end of the connection line is located farther from the drive circuit than the scanning line farthest from the drive circuit among the plurality of scanning lines, The detection device according to claim 9.

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