Method for manufacturing a display panel substrate and method for manufacturing a light-emitting diode display

Abstract

To provide a manufacturing method for a light-emitting diode supply board, capable of manufacturing a light-emitting diode supply board that can transfer a plurality of normal light-emitting diodes to a supply destination.SOLUTION: A method for manufacturing a light-emitting diode supply board for transferring a plurality of light-emitting diodes, comprises: a first mounting step of mounting a plurality of light-emitting diodes on a supply board; a selective removal step of selectively removing a defective light-emitting diode on the supply board; and a second mounting step of transferring a normal light-emitting diode to a position on the supply board where the defective light-emitting diode was arranged.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a light-emitting diode supply substrate, a method for manufacturing a light-emitting diode display, a method for manufacturing a divided unit of a light-emitting diode display, and a method for manufacturing an element supply substrate.

Background Art

[0002] In recent years, the development of displays using mini light-emitting diodes and micro light-emitting diodes has been actively carried out. One of the major manufacturing challenges for their practical use is the manufacturing means for arranging minute light-emitting diodes on a display panel. As an assembly means, a micro-structure transfer technique using a stamp has attracted attention (for example, Patent Document 1, Non-Patent Document 1).

[0003] When assembling an FHD (1920×1080) display panel using this technique, if light-emitting diodes are transferred one by one from a light-emitting diode supply substrate, transfer of 2,073,600 pixels is required. When manufacturing a color display, transfer of at least three types of mini light-emitting diodes or micro light-emitting diodes of red (R), green (G), and blue (B) is required for one pixel. If transferred one element at a time, transfer of about six million times or more is required. In the case of a 4K display, a transfer operation of 24 million times or more is required. Even if the display is assembled with such labor, when using a supply substrate mixed with a large number of defective light-emitting diodes, there is a problem that normal light-emitting diodes on the display panel substrate must be rearranged, that is, repaired. Therefore, a supply substrate mounted only with normal light-emitting diodes is eagerly desired. Note that this problem is an essential common problem even in the case of batch transfer from a supply substrate to a display panel substrate.

[0004] As a faster and more efficient transfer means to replace the stamp method, there is the laser lift-off method. In Patent Document 2, a method is shown in which a release layer is provided between a micro functional element to be transferred and a substrate, and the release layer ablates during laser irradiation to separate the substrate and the element. The drawback of using this method is that since the material of the release layer adheres to the side of the micro functional element, it is necessary to clean it after transfer, so it is not necessarily a good method. As a method that does not use a release layer, there is a method that utilizes the pressure-sensitive adhesiveness of PDMS (PolyDiMethylSiloxane), which is a silicone resin (Patent Document 3, Non-Patent Document 2). When this method is used, no extra deposits adhere to the micro functional element after the micro functional element is laser lifted off, so the expectation for the laser lift-off method using a silicone resin is increasing. An example of an apparatus for transferring a micro functional element by the laser lift-off method is shown in Patent Document 4.

[0005] Hereinafter, with reference to FIG. 9, an example of a conventional method for manufacturing a light-emitting diode display panel by the above-described laser lift-off method will be described. FIGS. 9(I) to (III) show an example of the process of manufacturing a supply substrate from a light-emitting diode manufacturing substrate, and the process of transferring light-emitting diodes one by one to the display panel substrate in the above-described stamp method is shown in FIGS. 9(IV) and (V).

[0006] In FIG. 9(I), 1 is a sapphire substrate as a starting substrate, and a plurality of GaN-based light-emitting diodes 2 formed on one surface thereof are processed in a state where they are individually separated. Further, the light-emitting diode 2 includes an electrode 3. 4 is a first supply substrate, which is composed of a substrate 41 made of quartz and a silicone resin layer 42 formed thereon as an adhesive layer.

[0007] As shown in Fig. 9(I), the first supply substrate 4 and the starting substrate (sapphire substrate) 1 are arranged such that the light-emitting diode 2 faces the adhesive layer 42 with a constant gap therebetween and at an optimal distance. In this state, the laser light 6 is irradiated from the surface side of the starting substrate 1 where the light-emitting diode 2 is not formed. The laser light 6 passes through the starting substrate 1 and reaches the vicinity of the interface between the surface of the starting substrate 1 and the light-emitting diode 2, whereby the GaN on the light-emitting diode 2 side in the vicinity of this interface is thinned and laser ablated. This is the so-called laser lift-off, and the light-emitting diode 2 is separated from the starting substrate 1 and emitted toward the first supply substrate 4 facing the light-emitting diode 2. As a result, the emitted light-emitting diode 2 flies to the surface of the adhesive layer (silicone resin layer) 42 and is temporarily adhered to the surface of the adhesive layer 42. By scanning the laser light 6 over a desired region of the starting substrate 1, all the desired light-emitting diodes 2 on the starting substrate 1 can be transferred to the first supply substrate 4, and the first supply substrate 4 in Fig. 9(II) is completed. In this case, since the GaN component does not adhere to the light-emitting diode 2 as a residue due to ablation, there is no need to wash the deposits of a part of the release layer as in the case of the release layer (including an organic polymer).

[0008] Next, as shown in Fig. 9(III), a second supply substrate 5 having a substrate 51 and a silicone resin layer 52 as an adhesive layer thereon is prepared. Then, the second supply substrate 5 and the first supply substrate 4 in Fig. 9(II) are arranged such that the light-emitting diode 2 faces the adhesive layer 52 with a constant gap therebetween and at an optimal distance.

[0009] In this state, by irradiating a desired region on the surface of the first supply substrate 4 where the light-emitting diode 2 is not arranged while scanning the laser light 6, the second supply substrate 5 on which the light-emitting diode 2 provided with the electrode 3 is temporarily adhered in an upside-down state is completed. In this way, the second supply substrate 5 can be manufactured as a light-emitting diode supply substrate in which the electrode 3 is arranged outward.

[0010] Next, a display panel substrate 39 as a supply destination shown in FIG. 9(IV) is prepared. The display panel substrate 39 has electrodes and wirings (not shown). The display panel substrate 39 and the second supply substrate 5 are arranged such that the gap between them is constant and at an optimal distance. In this state, laser light 6 is irradiated from the surface side of the second supply substrate 5 where the light-emitting diodes 2 are not arranged. By such a laser lift-off method, as shown in FIG. 9(V), a plurality of light-emitting diodes 2 are transferred from the second supply substrate 5 to the display panel substrate 39.

[0011] By arranging the electrodes 3 of the light-emitting diodes 2 to be in electrical contact with the desired electrode positions on the display panel substrate 39 in this way using the laser lift-off method, the display panel 300 is completed (FIG. 9(V)).

[0012] However, even if a display is manufactured using the laser lift-off method that can transfer at a higher speed than the stamp method in this way, when a supply substrate mixed with a large number of defective light-emitting diodes is used, there is a problem that normal light-emitting diodes on the display substrate need to be rearranged, that is, repaired. Therefore, a supply substrate on which only normal light-emitting diodes are mounted is highly desired.

Prior Art Documents

Patent Documents

[0013]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Non-Patent Documents

[0014]

Non-Patent Document 1

Non - Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0015] As described above, in the case of using either the stamp method or the laser lift - off method, when defective light - emitting diodes are included among the light - emitting diodes mounted on the supply substrate (the second supply substrate 5 in FIG. 9) that supplies the light - emitting diodes to the display panel substrate, the defective light - emitting diodes are directly transferred to the display panel substrate, resulting in the problem of a decrease in the normal transfer yield.

[0016] The present invention is made to solve the above problems, and aims to provide a method for manufacturing a light-emitting diode supply substrate capable of transferring a plurality of normal light-emitting diodes to a supply destination, a method for manufacturing a high-yield light-emitting diode display, a method for manufacturing a dividing unit of a high-yield light-emitting diode display, and a method for manufacturing an element supply substrate capable of transferring a plurality of normal elements to a supply destination.

Means for Solving the Problems

[0017] In order to solve the above problems, the present invention provides a method for manufacturing a light-emitting diode supply substrate for transferring a plurality of light-emitting diodes to a supply destination, comprising: a first mounting step of mounting a plurality of light-emitting diodes on a supply substrate; a selective removal step of selectively removing defective light-emitting diodes on the supply substrate; a second mounting step of transferring normal light-emitting diodes to positions where the defective light-emitting diodes on the supply substrate were disposed. A method for manufacturing a light-emitting diode supply substrate is provided, which is characterized by including the above steps.

[0018] In this way, a light-emitting diode supply substrate equipped with only normal light-emitting diodes can be manufactured. By using the light-emitting diode supply substrate manufactured in this way, a plurality of normal light-emitting diodes can be transferred to a supply destination all at once or selectively. That is, according to the method for manufacturing a light-emitting diode supply substrate of the present invention, a light-emitting diode supply substrate capable of transferring a plurality of normal light-emitting diodes to a supply destination all at once or selectively can be manufactured.

[0019] In addition, since the light-emitting diode supply substrate manufactured by the method for manufacturing a light-emitting diode supply substrate of the present invention does not include defective light-emitting diodes, the occurrence of light-emitting defects during the manufacture of a light-emitting diode display or a divided unit of a light-emitting diode display can be significantly reduced. As a result, it becomes possible to manufacture a light-emitting diode display or a divided unit thereof with high yield and high efficiency.

[0020] It is preferable that a determination step of determining whether each of the light-emitting diodes on the supply substrate is normal is further included before the selective removal step.

[0021] By doing so, defective light-emitting diodes can be surely selected and removed.

[0022] In addition, it is preferable that the determination step is performed by a photoluminescence method.

[0023] When the determination step is performed by the photoluminescence method, the determination can be made non-contact.

[0024] It is preferable that the selective removal step, the second mounting step, or both be performed by a laser lift-off method.

[0025] If the selective removal step, the second mounting step, or both are performed by the laser lift-off method, a light-emitting diode supply substrate can be manufactured with higher efficiency.

[0026] It is preferable that the laser used in the laser lift-off method in the selective removal step, the second mounting step, or both be an excimer laser.

[0027] By doing so, time-compressed pulsed laser light can be generated. The pulse width and light intensity can be easily controlled by controlling device power parameters such as the pulse transmission voltage, and high-intensity laser light can be generated in a single pulse, which cannot be achieved by other continuous wave oscillation (CW) lasers.

[0028] The laser used in the selective removal process, the second mounting process, or both of them in the laser lift-off method may be a pulsed laser, and lift-off may be performed by irradiating the laser beam for one pulse.

[0029] In this way, it is not necessary to limit the laser used in the selective removal process, the second mounting process, or both of them to an excimer laser, and a laser capable of generating a pulsed laser beam with the required intensity can be used.

[0030] As the light-emitting diode, one having a longest part smaller than 300 μm may be used.

[0031] In this way, transfer can be performed more efficiently by the laser lift-off method.

[0032] As the light-emitting diode, one selected from the group consisting of a red light-emitting diode, a green light-emitting diode, and a blue light-emitting diode can be used.

[0033] In this way, single-color supply substrates of red, green, and blue light-emitting diodes can be manufactured.

[0034] The plurality of light-emitting diodes can also be arranged such that one or more of a red light-emitting diode, a green light-emitting diode, and a blue light-emitting diode form a set of pixels.

[0035] In this way, when manufacturing a light-emitting diode display, transfer can be performed batchwise or in units of one pixel.

[0036] As the supply substrate, one including a quartz substrate and an adhesive layer provided on the quartz substrate is used. In the first mounting process, it is preferable to adhere the plurality of light-emitting diodes to the surface of the adhesive layer of the supply substrate in a matrix.

[0037] In this way, the supply substrate of the light-emitting diode can be manufactured efficiently.

[0038] The second mounting step is to prepare a replenishment substrate including a quartz substrate, an adhesive layer provided on the quartz substrate, and a plurality of light-emitting diodes adhesively bonded in a matrix on the surface of the adhesive layer, to transfer the normal light-emitting diodes on the replenishment substrate to the positions on the supply substrate where the defective light-emitting diodes have been removed which is preferably carried out.

[0039] In this way, the supply substrate of the light-emitting diodes can be manufactured more efficiently.

[0040] It is preferable to further include an arrangement step of arranging the replenishment substrate so as to face the supply substrate between the selective removal step and the second mounting step.

[0041] In this way, the accuracy in the second mounting step can be further improved.

[0042] In this case, in the arrangement step, it is preferable to align the positions where the defective light-emitting diodes are arranged on the supply substrate and the positions of the normal light-emitting diodes on the replenishment substrate so as to face each other.

[0043] Thereby, the normal light-emitting diodes can be more accurately mounted at the positions where the defective light-emitting diodes have been removed.

[0044] As the supply substrate, it is preferable to use a quartz substrate made of synthetic quartz.

[0045] Synthetic quartz can exhibit excellent in-plane film thickness uniformity. Therefore, when synthetic quartz is used for the quartz substrate, it becomes possible to control the gap between the substrates opposed to each other for performing the laser lift-off method.

[0046] The quartz substrate of the supplementary substrate is preferably also made of synthetic quartz. In this case, for example, when the supplementary substrate is arranged to face the supply substrate in parallel in the above arrangement step, it can be arranged at a constant distance with high precision over the entire surface of the substrate.

[0047] As the supply substrate, it is preferable to use one in which a facet is provided on the quartz substrate.

[0048] In this way, when setting the supply substrate in the transfer device using the laser lift-off method, it can be set without misaligning the rotational position.

[0049] In this case, it is more preferable to use, as the supplementary substrate, one in which a facet is provided on the quartz substrate.

[0050] In this case, it is even more preferable that the facet is a mark indicating orientation.

[0051] In this case, when setting the supply substrate in the transfer device using the laser lift-off method, it can be set without misaligning the rotational position.

[0052] As the supply substrate, it is possible to use one in which the quartz substrate has one or more selected from the group consisting of characters, symbols, and 2D barcodes.

[0053] As the supplementary substrate, it is also possible to use one in which the quartz substrate has one or more selected from the group consisting of characters, symbols, and 2D barcodes.

[0054] By doing so, it becomes possible to manage individual supply substrates and supplementary substrates.

[0055] The characters, the symbols, and the 2D barcodes can be marks indicating orientation.

[0056] The individual identification of the supply substrate can be performed by the text, the symbol, and the 2D barcode. Also, it can be used as a mark indicating the orientation.

[0057] In this case, when setting the supply substrate in the transfer device using the laser lift-off method, accurate individual discrimination can be performed, and it can be set without misaligning the rotational position.

[0058] As the supply substrate, it is preferable to use one in which the adhesive layer is made of a pressure-sensitive adhesive containing silicone.

[0059] As the replenishment substrate, one in which the adhesive layer is made of a pressure-sensitive adhesive containing silicone can also be used.

[0060] Thereby, good adhesive force can be provided. Also, impurities do not adhere to the light-emitting diode when transferring the light-emitting diode by the laser lift-off method. Furthermore, the light-emitting diode can be adhered again after removing the light-emitting diode once.

[0061] As the supply substrate, it is advisable to use one in which the pitch of the matrix is an integer fraction of the pixel pitch of the display panel or the pixel pitch.

[0062] In this way, without unnecessary alignment movement of the supply substrate, only a minimum movement operation is performed, and by controlling the movement of the laser irradiation position, a plurality of light-emitting diodes can be transferred by the laser lift-off method.

[0063] The first mounting step is preparing a starting substrate on which the plurality of light-emitting diodes are manufactured, separating the plurality of light-emitting diodes on the starting substrate one by one, transferring the plurality of light-emitting diodes separated one by one onto the supply substrate and preferably includes.

[0064] By doing so, the first mounting process can be performed efficiently.

[0065] It is preferable that the step of transferring the plurality of light-emitting diodes in the first mounting process onto the supply substrate is performed by a laser lift-off method.

[0066] By doing so, the first mounting process can be performed even more efficiently.

[0067] Further, the present invention provides a method for manufacturing a light-emitting diode display, comprising: a step of manufacturing the light-emitting diode supply substrate by the method for manufacturing a light-emitting diode supply substrate of the present invention; and a step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate onto a display panel substrate. The present invention provides a method for manufacturing a light-emitting diode display, characterized by comprising the above steps.

[0068] In the method for manufacturing a light-emitting diode display of the present invention, a light-emitting diode supply substrate is manufactured by the method for manufacturing a light-emitting diode supply substrate of the present invention, and using this, a plurality of light-emitting diodes are transferred onto a light-emitting diode display substrate. Therefore, a light-emitting diode display without defective light-emitting diodes can be efficiently manufactured. That is, according to the method for manufacturing a light-emitting diode display of the present invention, a light-emitting diode display can be manufactured with a high yield.

[0069] It is preferable that the step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate onto the display panel substrate is performed by a laser lift-off method.

[0070] By doing so, a plurality of light-emitting diodes can be transferred at a higher speed, and thus a more practical method for manufacturing a light-emitting diode display can be provided.

[0071] Further, the present invention provides a method for manufacturing a divided unit of a light-emitting diode display, comprising: By the method for manufacturing a light-emitting diode supply substrate of the present invention, a step of manufacturing the light-emitting diode supply substrate, a step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate onto a dividing unit of a light-emitting diode display, and A method for manufacturing a dividing unit of a light-emitting diode display is provided, which is characterized by including these steps.

[0072] In the method for manufacturing a dividing unit of a light-emitting diode display of the present invention, the light-emitting diode supply substrate is manufactured by the method for manufacturing a light-emitting diode supply substrate of the present invention, and using this, a plurality of light-emitting diodes are transferred onto the dividing unit of the light-emitting diode display. Therefore, a dividing unit of a light-emitting diode display that does not include defective light-emitting diodes can be efficiently manufactured. That is, according to the method for manufacturing a dividing unit of a light-emitting diode display of the present invention, a dividing unit of a light-emitting diode display can be manufactured with a high yield.

[0073] The step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate onto the dividing unit of the light-emitting diode display is preferably performed by a laser lift-off method.

[0074] In this way, a plurality of light-emitting diodes can be transferred at a higher speed, so that a more practical method for manufacturing a dividing unit of a light-emitting diode display can be provided.

[0075] Further, in the present invention, there is provided a method for manufacturing an element supply substrate for transferring a plurality of elements to a supply destination, a first mounting step of mounting a plurality of elements on a supply substrate, a selective removal step of selectively removing defective elements on the supply substrate, a second mounting step of transferring normal elements to positions where the defective elements were arranged on the supply substrate, and A method for manufacturing an element supply substrate is provided, which is characterized by including these steps.

[0076] The present invention is not limited to a supply substrate for transferring light-emitting diodes, and for example, an element supply substrate for transferring elements such as micro electrical elements and micro semiconductor chips can be provided. This element supply substrate can transfer a plurality of normal elements to a supply destination. A manufacturing method of such an element supply substrate can be used, for example, in three-dimensional mounting and the manufacture of electrical and electronic devices.

[0077] For example, the element can be an electrical element, a semiconductor chip, or a MEMS element.

[0078] Thus, the manufacturing method of the element supply substrate of the present invention can be applied to the supply of various elements.

Advantages of the Invention

[0079] As described above, according to the manufacturing method of the light-emitting diode supply substrate of the present invention, a light-emitting diode supply substrate capable of transferring a plurality of normal light-emitting diodes to a supply destination all at once or selectively can be manufactured.

[0080] In addition, since the light-emitting diode supply substrate manufactured by the manufacturing method of the light-emitting diode supply substrate of the present invention does not include defective light-emitting diodes, the occurrence of light-emitting defects during the manufacture of a light-emitting diode display or a divided unit of a light-emitting diode display can be significantly reduced. As a result, it becomes possible to manufacture a light-emitting diode display with high yield and high efficiency.

[0081] Furthermore, since the manufacturing method of the light-emitting diode display and the manufacturing method of the divided unit of the light-emitting diode display of the present invention include the manufacturing method of the light-emitting diode supply substrate of the present invention, a light-emitting diode display or a divided unit of a light-emitting diode display that does not include defective light-emitting diodes can be efficiently manufactured.

[0082] And according to the manufacturing method of the element supply substrate of the present invention, an element supply substrate capable of transferring a plurality of normal elements to a supply destination all at once or selectively can be manufactured.

Brief Description of the Drawings

[0083]

Figure 1

Figure 2

Figure 3

Figure 4

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Figure 6

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Figure 8

Figure 9

Embodiments for Carrying Out the Invention

[0084] As described above, there has been a demand for the development of a method for manufacturing a light-emitting diode supply substrate capable of collectively or selectively transferring a plurality of normal light-emitting diodes to a supply destination, a method for manufacturing a high-yield light-emitting diode display, a method for manufacturing a divided unit of a high-yield light-emitting diode display, and a method for manufacturing an element supply substrate capable of collectively or selectively transferring a plurality of normal elements to a supply destination.

[0085] As a result of intensive studies on the above problems, the present inventors have found that a method for manufacturing a light-emitting diode supply substrate including a selective removal step of selectively removing defective light-emitting diodes and a second mounting step of transferring normal light-emitting diodes to positions where the defective light-emitting diodes were disposed can solve the above problems, and have completed the present invention.

[0086] That is, the present invention is a method for manufacturing a light-emitting diode supply substrate for transferring a plurality of light-emitting diodes to a supply destination, a first mounting step of mounting a plurality of light-emitting diodes on a supply substrate, a selective removal step of selectively removing defective light-emitting diodes on the supply substrate, and a second mounting step of transferring normal light-emitting diodes to positions where the defective light-emitting diodes on the supply substrate were disposed. A method for manufacturing a light-emitting diode supply substrate, characterized by including the above steps.

[0087] Further, the present invention is a method for manufacturing a light-emitting diode display, a step of manufacturing the light-emitting diode supply substrate by the method for manufacturing a light-emitting diode supply substrate of the present invention, and a step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate to a display panel substrate. A method for manufacturing a light-emitting diode display, characterized by including the above steps.

[0088] Furthermore, the present invention is a method for manufacturing a divided unit of a light-emitting diode display, a step of manufacturing the light-emitting diode supply substrate by the method for manufacturing a light-emitting diode supply substrate of the present invention, and a step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate to a divided unit of a light-emitting diode display. A method for manufacturing a divided unit of a light-emitting diode display, characterized by including the above steps.

[0089] The present invention is a method for manufacturing an element supply substrate for transferring a plurality of elements to a supply destination, comprising: a first mounting step of mounting a plurality of elements on a supply substrate; a selective removal step of selectively removing defective elements on the supply substrate; a second mounting step of transferring normal elements to positions on the supply substrate where the defective elements were disposed; and a method for manufacturing an element supply substrate, characterized by including the above steps.

[0090] Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.

[0091] [Method for manufacturing a light-emitting diode supply substrate] The present invention is a method for manufacturing a light-emitting diode supply substrate for transferring a plurality of light-emitting diodes to a supply destination, comprising: a first mounting step of mounting a plurality of light-emitting diodes on a supply substrate; a selective removal step of selectively removing defective light-emitting diodes on the supply substrate; a second mounting step of transferring normal light-emitting diodes to positions on the supply substrate where the defective light-emitting diodes were disposed; and characterized by including the above steps.

[0092] In the method for manufacturing a light-emitting diode supply substrate of the present invention, in the selective removal step, among a plurality of light-emitting diodes arranged on the supply substrate in the first mounting step, defective light-emitting diodes are selected and removed. Then, in the second mounting step, normal light-emitting diodes are transferred to the positions where the previously removed defective light-emitting diodes were arranged. According to such a manufacturing method, a light-emitting diode supply substrate equipped with only normal light-emitting diodes can be manufactured. By using the light-emitting diode supply substrate manufactured in this way, a plurality of normal light-emitting diodes can be collectively or selectively transferred to a supply destination by the laser lift-off method or the stamp method. That is, according to the method for manufacturing a light-emitting diode supply substrate of the present invention, a light-emitting diode supply substrate capable of collectively transferring a plurality of normal light-emitting diodes to a supply destination can be manufactured. Also, by selecting a light-emitting diode at a desired position on the supply substrate of the light-emitting diode manufactured according to the present invention and transferring a normal light-emitting diode to a supply destination by the laser lift-off method. That is, a light-emitting diode supply substrate capable of transferring a normal light-emitting diode regardless of the selected position can be manufactured.

[0093] Furthermore, since the light-emitting diode supply substrate manufactured by the method for manufacturing a light-emitting diode supply substrate of the present invention does not include defective light-emitting diodes, the occurrence of light-emitting defects during the manufacture of a light-emitting diode display or a divided unit of a light-emitting diode display can be significantly reduced. As a result, it becomes possible to manufacture a light-emitting diode display or its divided unit with high yield and high efficiency.

[0094] Next, each step will be described in more detail.

[0095] [First Mounting Step] In the first mounting step, a plurality of light-emitting diodes are mounted on the supply substrate.

[0096] Here, as the supply substrate, for example, one including a quartz substrate and an adhesive layer provided on the quartz substrate can be used. Details of the supply substrate, the quartz substrate, and the adhesive layer will be described later.

[0097] As the light-emitting diode, one type selected from the group consisting of a red light-emitting diode, a green light-emitting diode, and a blue light-emitting diode can be used. By doing so, single-color supply substrates for the red, green, and blue light-emitting diodes can be manufactured.

[0098] As the light-emitting diode, it is preferable to use one having a longest part smaller than 300 μm. By doing so, the inertial mass of the light-emitting diode becomes small, and transfer can be performed more efficiently by the laser lift-off method.

[0099] In the first mounting step, it is preferable to adhere a plurality of light-emitting diodes in a matrix pattern on the surface of the adhesive layer of the supply substrate. By doing so, the supply substrate of the light-emitting diode can be efficiently manufactured.

[0100] In this case, it is preferable to use one in which the pitch of the matrix is an integer multiple of the pixel pitch of the display panel or 1 / n of the pixel pitch.

[0101] By doing so, without unnecessary alignment movement of the supply substrate, only a minimum movement operation is performed, and by controlling the movement of the laser irradiation position, a plurality of light-emitting diodes can be transferred all at once by the laser lift-off method.

[0102] The first mounting step is a step of preparing a starting substrate on which the plurality of light-emitting diodes are manufactured, a step of separating the plurality of light-emitting diodes on the starting substrate one by one, a step of transferring the plurality of light-emitting diodes separated one by one onto the supply substrate and preferably includes. By doing so, the first mounting step can be performed efficiently.

[0103] Here, as the starting substrate, for example, a substrate including a sapphire substrate and a plurality of light-emitting diodes manufactured on this sapphire substrate can be used.

[0104] It is preferable to transfer the plurality of light-emitting diodes in the first mounting process by a laser lift-off method. By doing so, the first mounting process can be performed more efficiently.

[0105] [Selective removal process] In the selective removal process, defective light-emitting diodes on the supply substrate are selectively removed.

[0106] It is preferable to further include a determination process for determining whether each light-emitting diode on the supply substrate is normal or not before the selective removal process. By doing so, defective light-emitting diodes can be more reliably removed in the selective removal process.

[0107] In this determination process, information on the positions of defective light-emitting diodes may be, for example, mapped and recorded.

[0108] Also, it is preferable to perform the determination process by a photoluminescence method. When the determination process is performed by the photoluminescence method, it can be determined non-contact.

[0109] The photoluminescence method is a method of irradiating a substance with light and observing the light generated when excited electrons return to the ground state, and it is possible to determine the normality / abnormality of substances, functional elements, electronic devices, etc. from the observed light information. In the case of light-emitting diodes, for example, there is the INSPECTRA PL series of TASMIT.

[0110] Although the photoluminescence method is preferable in that it is non-contact and has a high determination speed, another method may be used if there is a method more preferable than the photoluminescence method for the object to be determined as normal / abnormal. When targeting electronic devices such as substances and functional elements other than light-emitting diodes, a method suitable for each determination target may be used.

[0111] The selective removal step is preferably performed by the laser lift-off method. When the selective removal step is performed by the laser lift-off method, only the defective light-emitting diodes of the target can be easily removed, and as a result, a light-emitting diode supply substrate can be manufactured with higher efficiency.

[0112] When the selective removal step is performed by the laser lift-off method, it is preferable to shape the laser beam to approximately the same size as the size of the defective light-emitting diode in the vicinity of the interface between the defective light-emitting diode and the adhesive layer of the supply substrate. In this way, each defective light-emitting diode can be selectively removed by laser lift-off.

[0113] Also, by scanning the laser beam so that it is irradiated at different light-emitting diode positions for each irradiation timing, the defective light-emitting diodes of the target can be selectively removed by laser lift-off.

[0114] The laser beam that can be used in the laser lift-off method in the selective removal step will be described later.

[0115] [Second Mounting Step] In the second mounting step, a normal light-emitting diode is transferred to the position where the defective light-emitting diode was arranged on the supply substrate.

[0116] The second mounting step is preparing a replenishment substrate including a quartz substrate, an adhesive layer provided on the quartz substrate, and a plurality of light-emitting diodes adhesively attached in a matrix on the surface of the adhesive layer, Transferring the normal light-emitting diodes on the replenishment substrate to the positions on the supply substrate where the defective light-emitting diodes have been removed is preferably performed in this way. By doing so, the supply substrate of the light-emitting diodes can be manufactured more efficiently.

[0117] Alternatively, as the replenishment substrate, for example, a substrate including a sapphire substrate similar to the starting substrate and a plurality of light-emitting diodes manufactured on this sapphire substrate can also be used.

[0118] Preferably, an arrangement step of arranging the replenishment substrate so as to face the supply substrate is further included between the selective removal step and the second mounting step. By doing so, the accuracy in the second mounting step can be further improved.

[0119] In this case, in the above arrangement step, it is preferable to align the position where the defective light-emitting diodes are arranged on the supply substrate and the position of the normal light-emitting diodes on the replenishment substrate so as to face each other. Thereby, the normal light-emitting diodes can be more accurately mounted at the positions where the defective light-emitting diodes have been removed.

[0120] The second mounting step is preferably performed by the laser lift-off method. When the second mounting step is performed by the laser lift-off method, only the target normal light-emitting diodes can be selected and easily transferred to the positions where the defective light-emitting diodes have been arranged. As a result, the light-emitting diode supply substrate can be manufactured with higher efficiency.

[0121] When the second mounting step is performed by the laser lift-off method, it is preferable to shape the laser beam to a size approximately the same as the size of the normal light-emitting diodes to be transferred in the vicinity of the interface between the normal light-emitting diodes to be transferred and the adhesive layer of the replenishment substrate. By doing so, each normal light-emitting diode can be selectively laser-lifted off, and the normal light-emitting diodes can be more accurately transferred to the positions where the defective light-emitting diodes were arranged.

[0122] Also, by scanning the laser light and irradiating different light-emitting diode positions for each irradiation timing, the target normal light-emitting diodes can be selectively laser-lifted off.

[0123] The laser light that can be used in the laser lift-off method in the second mounting process will be described later.

[0124] In the method for manufacturing a light-emitting diode supply substrate of the present invention, the substrate obtained in the second mounting process may be used as the light-emitting diode supply substrate as it is. Alternatively, a plurality of light-emitting diodes may be transferred from one or a plurality of substrates obtained in the second mounting process to another substrate, and the substrate obtained thereby may be used as the light-emitting diode supply substrate. Specific examples of each will be described later.

[0125] Next, the supply substrate, any replenishment substrate, laser light, and light-emitting diodes that can be used in the method for manufacturing a light-emitting diode supply substrate of the present invention will be described in more detail.

[0126] [Supply Substrate] Regarding the planar shape of the supply substrate, it may be circular or rectangular. Of course, an optimal shape may be used according to the purpose. Simply put, when used as a supply substrate for normal light-emitting diodes, it can be said that using a circular supply substrate while inheriting the pattern layout during light-emitting diode manufacturing is the most efficient way to provide a supply substrate for light-emitting diodes. On the other hand, if emphasis is placed on being a light-emitting diode supply substrate for manufacturing a final display, a supply substrate shape corresponding to a divided unit, so-called tile, that is divided into 1 / n in both the vertical and horizontal directions while maintaining the screen (shape, aspect ratio) of the desired display is preferable. In this way, it is preferable to provide a supply substrate in a shape suitable for the product such as an electronic device to be finally manufactured.

[0127] Next, the quartz substrate and the adhesive layer that can be used for the supply substrate and any replenishment substrate will be described in more detail.

[0128] [Quartz substrate] When using a supply substrate and any replenishment substrate that includes a quartz substrate, a high transmittance of short-wavelength UV laser light that causes laser ablation can be provided. Preferably, the quartz substrate is a synthetic quartz substrate.

[0129] In the case of synthetic quartz glass, an in-plane film thickness uniformity (TTV: total thickness variation) of approximately 1 μm or less can be achieved. Therefore, by using synthetic quartz glass, it becomes possible to control the gap between the substrates that are opposed to each other in order to perform the laser lift-off method.

[0130] Furthermore, the merit of using synthetic quartz glass is that thermal stability can be obtained. That is, the synthetic quartz glass substrate has a thermal expansion coefficient that is approximately 1 / 5 that of other quartz glass substrates, and thermal distortion during operation can be reduced. In particular, in the case of a stamp component having a convex-shaped protrusion, displacement and distortion (distortion) of the protrusion position due to thermal expansion and contraction can be reduced, so that an accurate laser lift-off transfer operation becomes possible.

[0131] Also, it is preferable to provide a facet at at least one or more vertices on the front or back surface side of the quartz substrate, or to apply a mark indicating the orientation of the quartz substrate on any of the front, back, or side surfaces of the peripheral portion of the quartz substrate. By doing so, when setting the supply substrate in a transfer device using the laser lift-off method, it can be set without making a mistake in the rotational position.

[0132] Also, by engraving characters, symbols, 2D barcodes, etc. on the quartz substrate, it becomes possible to manage individual supply substrates. Note that these characters, symbols, or 2D barcodes, etc. may be used as orientation marks. The above-mentioned facet may also be used as an orientation mark.

[0133] [Adhesive layer] For the adhesive layer, it is preferable to use a pressure-sensitive adhesive (silicone-based) mainly composed of silicone that does not cause ablation at the interface. As the silicone-based pressure-sensitive adhesive, a composition composed of PDMS (Polydimethylsiloxane), a silicone composition obtained by modifying the side chains and both ends of PDMS, and a combination thereof may be used. By adjusting each material composition (molecular weight, modifying group, modifying substance, modification amount, etc.) and in the case of a mixture, the mixing ratio, etc., physical properties such as the hardness of the material, pressure adhesive force, and repeated adhesiveness can be controlled. It can be optimized not only by mixing but also by cross-linking various modified silicone compositions or three-dimensionally structuring the molecules. When the silicone-based pressure-sensitive adhesive is optimized and used in the process of the present invention, unlike when using an organic-based composition mainly composed of an organic skeleton in the main chain, such as an organic material like polyimide or an acrylic pressure-sensitive adhesive, as the adhesive layer, when the light-emitting diode is peeled off from the adhesive layer by laser lift-off method laser ablation, the organic adhesive layer does not adhere to and remain on the light-emitting diode. As a result, it becomes possible to repeatedly mount the light-emitting diode at the same place, which was not achievable with the conventional organic-based composition as the adhesive layer.

[0134] Note that the adhesion principle of the silicone-based pressure-sensitive adhesive serving as the adhesive is that the tack force is generated by the adhesive force inherent in the material and the pushing-in (external force acting as pressure). Since the tack force is sufficiently generated with a pushing-in displacement amount of about several microns to 5 μm, about 5 to 10 μm is sufficient. Of course, there is no problem even if it is thicker than that.

[0135] [Laser light] Next, the laser light that can be used in the laser lift-off method will be described in more detail.

[0136] When using the laser lift-off method in the selective removal process, the second mounting process, or both, it is preferable to use an excimer laser as the laser.

[0137] By doing so, a time-compressed pulsed laser beam can be generated. The pulse width and light intensity can be easily controlled by controlling device power parameters such as the pulse transmission voltage, and it is possible to generate high-intensity laser light in a single pulse, which cannot be achieved with other continuous wave oscillation (CW) lasers.

[0138] When using the laser lift-off method in the selective removal process, the second mounting process, or both, the laser is preferably a pulsed laser, and lift-off is performed by irradiating the laser light in one pulse. The reason will be explained below.

[0139] When using a CW laser in the laser lift-off method, the energy per wavelength is low, and the light-emitting diode cannot be peeled off by laser ablation without long-time laser irradiation. Thus, even if it is possible to peel off with a CW laser, the laser energy at the moment of peeling is small, so it is not easy to fly the light-emitting diode from the supply substrate side to the receiving substrate side. On the other hand, in the case of a pulsed laser, a time-compressed high-energy pulsed laser beam can be extracted, so laser ablation can be caused instantaneously in one pulse. As a result, the force to fly the light-emitting diode from the supply-side substrate to the receiving-side substrate is large and this force is manifested instantaneously, so it is suitable for transferring the light-emitting diode by the laser lift-off method.

[0140] In particular, it is preferable to use an excimer laser among pulsed lasers. As types of excimer (Excimer), XeCl (308 nm), KrF (248 nm), and ArF (193 nm) are preferably practical. For example, as an example of a XeCl excimer laser, there is LAMBDA SX sold by COHERENT, which outputs a maximum pulse energy of 1000 mJ, and there are systems with a maximum pulse repetition frequency of 500 Hz (500 W) and 600 Hz (600 W).

[0141] Examples of KrF and ArF excimer lasers include the IndyStar series sold by COHERENT. In the case of KrF, it has a maximum output of 12W and can oscillate at a maximum pulse repetition frequency of 1KHz when the maximum pulse energy is 12mJ. Furthermore, it can oscillate at a maximum pulse repetition frequency of 2KHz when the maximum pulse energy is 6mJ.

[0142] In the case of ArF, it has a maximum output of 8W and can oscillate at a maximum pulse repetition frequency of 1KHz when the maximum pulse energy is 8mJ. Furthermore, it can oscillate at a maximum pulse repetition frequency of 2KHz when the maximum pulse energy is 4mJ.

[0143] When the pulse repetition frequency is 1KHz, the pulse time interval is 1msec. In reality, since the time for the placement process is added, the manufacturing method of the light-emitting diode supply substrate of the present invention is limited by the stage movement time, but extremely high-speed transfer is possible compared to the stamp method. Also, in the selective removal process and the second mounting process of the manufacturing method of the light-emitting diode supply substrate of the present invention, instead of transferring all the light-emitting diodes arranged on the entire surface of the substrate at once, the main purposes are to remove defective light-emitting diodes and mount normal light-emitting diodes at their positions respectively. Therefore, as a method for manufacturing a supply substrate that does not include defective light-emitting diodes, it is an extremely useful method.

[0144] Also, although the energy of the excimer laser light itself is high energy, since the time width of one pulse is compressed to a very short time of 24nsec (FWHM) for XeCl and 7nsec (FWHM) for KrF and ArF, there is an advantage that it is difficult to leave damage in the laser irradiation area.

[0145] In addition, if there are pulse lasers other than excimer lasers that have sufficient performance to realize the present invention, they may be used.

[0146] Thus, it is not necessary to limit the laser used in the selective removal process, the second mounting process, or both to an excimer laser, and a laser capable of generating pulsed laser light with the required intensity can be used.

[0147] When the step of collectively transferring a plurality of light-emitting diodes in the first mounting process is performed by the laser lift-off method, the laser used is not particularly limited and may be a CW laser.

[0148] [Light-emitting diode] Next, the light-emitting diodes used in the method for manufacturing a light-emitting diode supply substrate of the present invention will be described in more detail.

[0149] Generally, light-emitting diodes with a short side of 100 μm or more to 300 μm are called mini light-emitting diodes, and those with a short side of 100 μm or less, and further 50 μm or less, are also called micro light-emitting diodes. Recently, some companies prioritize commercial merits and call light-emitting diodes with a size of 150 μm × 150 μm micro light-emitting diodes. Although it is difficult to accurately define these scales, the light-emitting diodes to be transferred in the present invention are those referred to as the above-mentioned mini light-emitting diodes or micro light-emitting diodes.

[0150] For example, in the case of a mini light-emitting diode with a length × width of 100 μm × 200 μm, the height was 100 μm or less, but recently, thin-film blue and green mini light-emitting diodes with a size of 150 μm × 150 μm × slightly less than 10 μm in height have also started to appear. Correspondingly, in the case of red mini light-emitting diodes, there are those with a height slightly less than twice that. In the case of micro light-emitting diodes with a planar size of 100 μm × 100 μm, the thinning has further progressed, and including the electrodes, it has become 10 microns or less, and some are about 7 microns. In terms of the planar size of light-emitting diodes, those with a size of 25 μm × 25 μm × 7 μm in length have already been made.

[0151] When transferring the above-mentioned mini light-emitting diodes and micro light-emitting diodes by the laser lift-off method, it is advisable to adjust the distance between the light-emitting diode supply substrate and the receiving substrate to a flying distance of about 4 times or less the length of one side of the planar size. Preferably, it is adjusted to be about 3 times or less the length of one side of the planar size, and more preferably 2 times or less the length of one side of the planar size. If the flying distance is about 4 times the length of one side of the planar size, it is possible to transfer the light-emitting diodes by the laser lift-off method by adjusting the laser light intensity, its in-plane uniformity, and the laser light irradiation size. Note that the laser irradiation size may be a spot size approximately the same as or slightly larger than the size of the target light-emitting diode.

[0152] Of course, it may also be about the same as or less than the length of one side of the planar size. Although it is difficult to achieve with an ordinary quartz substrate, by using a synthetic quartz substrate having an in-plane film thickness uniformity of 1 μm or less in TTV as the base material of the supply substrate, it is also possible to make the gap between the supply substrate and the receiving substrate several tens of microns. The limit distance of the gap depends on the potential of the apparatus for handling the supply substrate and the receiving substrate.

[0153] On the light-emitting diode supply substrate, a plurality of light-emitting diodes can also be arranged such that one or more of a red light-emitting diode, a green light-emitting diode, and a blue light-emitting diode form a set of pixels.

[0154] For example, in the second mounting process, a supply substrate for red light-emitting diodes, a supply substrate for green light-emitting diodes, and a supply substrate for blue light-emitting diodes are respectively produced, and using these supply substrates, red light-emitting diodes, green light-emitting diodes, and blue light-emitting diodes can be transferred onto a further supply substrate such that one or more of each form a set of pixels.

[0155] In this way, when manufacturing a light-emitting diode display, it becomes possible to transfer in batches or in units of one pixel.

[0156] Next, with reference to the drawings, several embodiments of the method for manufacturing a light-emitting diode supply substrate of the present invention will be specifically described.

[0157] (First Embodiment) FIGS. 1 and 2 are diagrams illustrating a first embodiment of the method for manufacturing a light-emitting diode supply substrate of the present invention.

[0158] In FIG. 1, 1 is a first sapphire substrate as a starting substrate, 2 is a light-emitting diode, which is in a state of being separated into individual pieces after being manufactured on the starting substrate (first sapphire substrate) 1. 3 indicates an electrode provided on the light-emitting diode 2. 4 is a first supply substrate, which includes a substrate 41 made of a quartz substrate and an adhesive layer 42 formed on one surface thereof. 6 is a laser beam. 7 is a container for collecting defective light-emitting diodes 2'. 8 is a second sapphire substrate as a replenishment substrate. The replenishment substrate (second sapphire substrate) 8 is separated into individual pieces like the starting substrate 1 in FIG. 1(a) and includes a light-emitting diode 9 on which an electrode 3 is formed. In FIG. 2, 5 is a second supply substrate, which includes a substrate 51 made of a quartz substrate and an adhesive layer 52 formed on one surface thereof.

[0159] With reference to FIGS. 1(a) to (e) and FIGS. 2(f) and (g), the method for manufacturing a light-emitting diode supply substrate according to the first embodiment of the present invention will be described.

[0160] (First Mounting Step) First, with reference to FIG. 1(a), an example of the first mounting step of mounting a plurality of light-emitting diodes on a supply substrate will be described.

[0161] As shown in Fig. 1(a), the surface of the first supply substrate 4 provided with the adhesive layer 42 and the surface of the starting substrate 1 on which the light-emitting diode 2 is manufactured are arranged to face each other in parallel, and adjusted so that the distance within the surface is constant. In this state, laser light 6 is incident from the back surface of the starting substrate 1 (the surface on which the light-emitting diode 2 is not arranged), and the laser light 6 is focused near the interface between the desired light-emitting diode 2 and the starting substrate 1. When the light-emitting diode 2 is a blue and green light-emitting diode, a GaN layer of the light-emitting diode 2 exists at the interface between the starting substrate 1 and the light-emitting diode 2 manufactured on the starting substrate 1. When the laser light 6 reaches this layer, a part of the GaN layer evaporates by laser ablation, and the light-emitting diode 2 is separated from the starting substrate 1. This method is a form of the laser lift-off method. The light-emitting diode 2 separated in this way flies toward the adhesive layer 42 of the opposing first supply substrate 4 and adheres to and is fixed to the adhesive layer 42. As shown in Fig. 1(a), while moving the back surface of the starting substrate 1, all the light-emitting diodes 2 are collectively transferred from the starting substrate 1 to the surface of the adhesive layer 42 of the first supply substrate 4. The state in which all the desired light-emitting diodes 2 are transferred in this way is shown in Fig. 1(b).

[0162] In Fig. 1(a), when performing the laser lift-off method using a CW laser in the step of collectively transferring a plurality of light-emitting diodes in the first mounting step, it is preferably performed with the electrode portion 3 of the light-emitting diode 2 pressed against the adhesive layer 42 (not shown). By doing so, it becomes possible to collectively transfer the light-emitting diodes by laser lift-off even with a CW laser.

[0163] (Selective removal step) Next, an example of the step of selectively removing defective light-emitting diodes will be described with reference to Fig. 1(c).

[0164] First, among the light-emitting diodes 2 on the first supply substrate 4, the defective light-emitting diode 2' to be removed is selected. This selection can be made, for example, based on the result of the determination step described above.

[0165] Next, laser light 6 is irradiated from the back surface (the surface where the light-emitting diode 2 is not arranged) side of the first supply substrate 4, and the laser light 6 is applied to the defective light-emitting diode 2' adhering to the adhesive layer 42 on the surface of the first supply substrate 4, and the defective light-emitting diode 2' is selectively removed by the laser lift-off method. More specifically, in this case, the laser light 6 is focused and irradiated in the vicinity of the portion where the laser light is in contact with the electrode 3 of the defective light-emitting diode 2' and at least a part of the adhesive layer 42 of the defective light-emitting diode 2', so that a difference in thermal expansion between the defective light-emitting diode 2' and the electrode 3 and the thermal expansion coefficient of the adhesive layer 42 occurs, and shear stress is generated at their interface. As a result, the defective light-emitting diode 2' and the electrode 3 formed thereon are instantaneously peeled off and removed. The peeled-off light-emitting diode 2' is captured by the container 7 for collecting defective light-emitting diodes. This is also a form of the laser lift-off method. In this way, by selectively performing the above-described peeling and removing operation while moving the irradiation position of the laser light 6 with respect to the defective light-emitting diode 2' to be selectively removed, all the defective light-emitting diodes 2' on the first supply substrate 4 are removed.

[0166] Note that the position 10 of the defective light-emitting diode 2' may be, for example, pre-determined as normal / defective on the starting substrate 1 in the determination process described above, and the position information may be mapped and recorded.

[0167] (Second mounting process) Next, with reference to FIG. 1(d), an example of the second mounting process of transferring a normal light-emitting diode to the position where the defective light-emitting diode on the supply substrate was arranged will be described.

[0168] As shown in Fig. 1(d), place the surface (adhesive layer 42) of the first supply substrate 4 facing upward (in the direction opposite to gravity), and place the surface of the replenishment substrate (second sapphire substrate) 8 facing downward thereon, and arrange them to face each other in parallel at a certain distance. At the same time, with the rotation of the X - Y axes on the surface of the first supply substrate 4 and the X - Y axes on the surface of the replenishment substrate 8 corrected, perform alignment control and arrangement so that the position of the normal light - emitting diode 9 on the replenishment substrate 8 to be replenished coincides with the position (the position where the normal light - emitting diode 9 is to be replenished) 10 where the defective light - emitting diode 2' of the first supply substrate 4 was arranged. Further, at the same time, in the Z - axis direction, adjust and arrange so that the distance between the surface of the replenishment substrate 8 and the surface of the first supply substrate 4 becomes an optimal distance. That is, the method for manufacturing a light - emitting diode supply substrate according to the first embodiment further includes an arrangement step of arranging the replenishment substrate 8 to face the first supply substrate 4 between the selective removal step and the second mounting step. In this arrangement step, alignment is performed so that the position 10 where the defective light - emitting diode 2' on the first supply substrate 1 was arranged faces the position of the normal light - emitting diode 9 on the replenishment substrate 8.

[0169] Specifically, although not shown in the figure, at least one or both of the stage for holding the replenishment substrate 8 and the stage for holding the first supply substrate 4 have an X - Y movement mechanism, at least one of the stages has a mechanism capable of rotation correction, and at least one of the stages has a Z - direction movement mechanism, which can be realized by a three - dimensional position alignment system.

[0170] Next, after the above - mentioned arrangement step is completed, irradiate the normal light - emitting diode 9 on the replenishment substrate 8 with laser light 6 from the back surface of the replenishment substrate 8, and transfer it to the light - emitting diode missing part (the position where the defective light - emitting diode 2' was arranged) 10 of the first supply substrate 4 by the laser lift - off method. This is also a form of the laser lift - off method (second mounting step).

[0171] By repeating the above - mentioned arrangement step and the second mounting step, a first light - emitting diode supply substrate 100 that does not include the defective light - emitting diode 2' as shown in Fig. 1(e) can be manufactured.

[0172] Incidentally, for the position of the normal light-emitting diode 9, for example, normal / defective determination may be performed in advance on the replenishment substrate 8, and the position information may be mapped and recorded.

[0173] (Inversion process) In the state of FIG. 1(e), since the electrode 3 side of the light-emitting diode 2 on the first light-emitting diode supply substrate 100 faces the side of the adhesive layer 5, it cannot be directly used for transfer to the light-emitting diode display panel. Therefore, it is necessary to further invert all the light-emitting diodes 2 front and back. The inversion process performed here will be described below.

[0174] First, prepare the second supply substrate 5 shown in FIG. 2(f). Next, as shown in FIG. 2(f), on the surface of the second supply substrate 5 provided with the adhesive layer 52 (the front surface), the adhesive layer 42 side (the front surface) on which the light-emitting diodes 2 of the first supply substrate 4 are mounted is arranged in a downward state so that they face each other in parallel at a certain distance. In this state, the laser lift-off method is performed to cause laser ablation, and all the light-emitting diodes 2 on the first supply substrate 4 are inverted front and back and transferred to the second supply substrate 5. As a result, as shown in FIG. 2(g), the second light-emitting diode supply substrate 200 can be manufactured.

[0175] Thus, according to the first embodiment of the present invention, the first and second light-emitting diode supply substrates 100 and 200 that do not include defective light-emitting diodes 2' can be manufactured.

[0176] Next, an example of a method for manufacturing a light-emitting diode display using the second light-emitting diode supply substrate manufactured as described above will be schematically described with reference to FIG. 3.

[0177] In the example shown in FIG. 3, as shown in FIG. 3(h), the light-emitting diode supply substrate 200 and the display panel substrate 39 as the supply destination are arranged to face each other so that the positions of the light-emitting diodes 2 on the light-emitting diode supply substrate 200 match the electrode positions on the display panel substrate 39.

[0178] In this state, as shown in FIG. 3(h), in the same procedure as described with reference to FIG. 9(IV), a plurality of light-emitting diodes 2 are collectively transferred and arranged from the second light-emitting diode supply substrate 200 to the display panel substrate 39 by the laser lift-off method. Subsequently, by making an electrical connection, a light-emitting diode display (or a light-emitting diode display panel as a divided unit thereof) 300 including the display panel substrate 39 and a plurality of light-emitting diodes 2 arranged on this substrate, as shown in FIG. 3(i), can be obtained.

[0179] Although not shown in the drawings, a plurality of light-emitting diodes 2 can be collectively transferred and arranged from the second light-emitting diode supply substrate 200 to the display panel substrate 39 even by using the stamping method.

[0180] According to the example of the manufacturing method described above, an assembly operation without defective light-emitting diodes is realized. By performing this operation for each of the RGB colors, an RGB color light-emitting diode display (light-emitting diode display panel) can be manufactured.

[0181] Thus, by manufacturing using the light-emitting diode supply substrate that can be manufactured according to the first embodiment of the manufacturing method of the light-emitting diode supply substrate of the present invention, it becomes possible to manufacture a light-emitting diode display with extremely few light-emitting defects.

[0182] When the step of collectively transferring the light-emitting diodes 2 from the second light-emitting diode supply substrate 200 to the display panel substrate 39 is performed by laser ablation using the laser lift-off method, it is possible to perform collective transfer non-contact and at high speed, and it becomes possible to manufacture a practically highly efficient light-emitting diode display 300. The light-emitting diode supply substrate 200 manufactured by the manufacturing method of the light-emitting diode supply substrate of the present invention in this way is very beneficial for realizing an inorganic light-emitting diode display, a so-called mini light-emitting diode display, and a micro light-emitting diode display.

[0183] Also, at the stage of manufacturing the second light-emitting diode supply substrate 200, it is advisable to perform the layout with at least one red light-emitting diode, one green light-emitting diode, and one blue light-emitting diode for each color at the pixel pitch required for the display, so as to form an RGB light-emitting diode group for one pixel. To achieve this, by using the first supply substrate 100 for the light-emitting diodes 2 for each of the RGB colors, the transfer position to the second supply substrate 5 is controlled for each color, and the process of arranging the RGB light-emitting diodes at the display pitch and in accordance with the electrode positions on the display panel substrate 39 side may be carried out. In this way, if it is manufactured in a state where the second light-emitting diode supply substrate 200 has a pixel configuration and a pixel pitch that match the desired display panel substrate 39, the RGB display 300 can be assembled simply by batch-transferring a plurality of light-emitting diodes from the second light-emitting diode supply substrate 200 to the display panel substrate 39.

[0184] Also, it is advisable that the pitch of the arrangement matrix (X-Y) of each of the RGB colors is the pixel pitch of the display panel or 1 / N times the pixel pitch P, where N is an integer, and the light-emitting diodes 2 are arranged accordingly.

[0185] To achieve this, in the process of transferring the light-emitting diodes from the first supply substrate 4 to the second supply substrate 5, or in the process of transferring from the starting substrate 1 to the first supply substrate 4 (the first mounting process), the light-emitting diodes 2 may be transferred to the desired pixel pitch P or P / N pitch position. Further, when transferring and arranging the light-emitting diodes 2 on the first supply substrate 4 and / or the second supply substrate 5, by arranging them at a pitch of 1 / N times the desired pixel pitch P (P / N) and at a pitch where the light-emitting diodes 2 do not overlap, the second light-emitting diode supply substrate 200 with the maximum mounting amount corresponding to the desired pixel pitch can be manufactured.

[0186] When using the second light-emitting diode supply substrate 200 with the light-emitting diodes 2 mounted at P / N (N: integer) pitch positions in this way, the transfer speed can be significantly improved when mounting the light-emitting diodes 2 on the display panel substrate 39. That is, when transferring the light-emitting diodes from the second light-emitting diode supply substrate 200 to the display panel substrate 39 by the laser lift-off method, the laser irradiation position is optically moved to selectively transfer the light-emitting diodes 2 at the desired pixel pitch positions on the X-Y matrix, so that a plurality of light-emitting diodes 2 can be transferred at once (in a batch) in the placement process including one-stage movement.

[0187] Next, move the chip position adjacent to the position of the light-emitting diode 2 transferred by the laser lift-off method at this time to the next transfer position (the pitch position of the display panel), and perform the transfer by the selective laser lift-off method. By repeating this series of operations, a light-emitting diode display panel equipped with the light-emitting diodes 2 at the pixel pitch positions can be manufactured at approximately N times the speed. By sequentially performing the above series of operations for each light-emitting diode of each color, an RGB light-emitting diode display 300 or a display division unit (for example, a light-emitting diode display panel) 300 can be manufactured.

[0188] As described above, if a supply substrate of light-emitting diodes arranged at positions suitable for the mounting and assembly of the light-emitting diodes on the display is manufactured at the manufacturing stage of the light-emitting diode supply substrate, the manufacturing efficiency can be further improved in the manufacturing and assembly process of the display or the display division unit.

[0189] In addition, when collectively transferring the light-emitting diodes 2 from the starting substrate 1 in Fig. 1(a) to the first supply substrate 4 using the laser lift-off method, and when collectively transferring the light-emitting diodes 2 from the first supply substrate 4 in Fig. 2(f) to the second supply substrate 5, an operation without stage movement is more preferable from the perspective of practical time than an operation involving stage movement such as the removal process of defective light-emitting diodes 2' (Fig. 1(c)) and the second mounting process of normal light-emitting diodes 9 (Fig. 1(d)). In such cases, if the laser beam 6 is scanned for transfer, collective transfer can be achieved in a practical time. At that time, the high repetition frequency of the excimer laser is effective. Also, since a high-power laser beam can be obtained, instead of irradiating each individual light-emitting diode 2 with a divided irradiation range, the laser beam spot size is widened to cover a region including a plurality of light-emitting diodes 2, and a plurality of them can be transferred together. The spot shape may be square or rectangular. By synchronizing the laser beam irradiation with the pulse oscillation frequency or an integral multiple thereof and blocking unnecessary pulse oscillation light with an optical shutter, the light-emitting diodes can be transferred efficiently.

[0190] (Second Embodiment) Figs. 4 and 5 are diagrams for explaining a method of manufacturing a light-emitting diode supply substrate according to a second embodiment of the present invention.

[0191] As described above, the first embodiment, as shown in FIGS. 1(c) and (d), is characterized in that on the first supply substrate 4, the steps from selectively removing the defective light-emitting diodes 2' to the second mounting step of transferring the normal light-emitting diodes 9 are performed. On the other hand, in the second embodiment shown in FIGS. 4 and 5, as shown in FIGS. 5(e2) and (f2), on the second supply substrate 5, the steps from selectively removing the defective light-emitting diodes 2' to the second mounting step of transferring the normal light-emitting diodes 9 are performed. Further, the difference is that the substrate for supplying the normal light-emitting diodes 9 uses the third supply substrate 11 as a replenishment substrate. As the third supply substrate 11, for example, one manufactured in the same manner as the first supply substrate 4 obtained in FIG. 4(b2) can be used. Naturally, the results of the pre-determination of the normality / abnormality of the light-emitting diodes 2 and 9 and their position information on the starting substrate 1 are carried over when the light-emitting diodes 2 and 9 are collectively transferred from the starting substrate 1 to the first supply substrate 4 and the third supply substrate 11.

[0192] Also, the state shown in FIG. 1(e) of the first embodiment, that is, the first light-emitting diode supply substrate 100 in the state where the defective light-emitting diodes 2' determined to be defective are removed and all the normal light-emitting diodes 2 are mounted, is used as the third supply substrate 11 shown in FIG. 5(f2) in the second embodiment of the present invention, and all the light-emitting diodes 2 on the first light-emitting diode supply substrate 100 can be used without distinction. As a result, the efficiency of the arrangement step and the second mounting step on the second supply substrate 5 shown in FIG. 5(f2) can be improved.

[0193] (Third Embodiment) FIG. 6 shows a part of an explanatory diagram of a method for manufacturing a light-emitting diode supply substrate according to the third embodiment of the present invention, and extracts the differences from the second embodiment of the present invention.

[0194] FIG. 6(f’) is characterized in that a replenishment substrate (second sapphire substrate) 8 is used instead of the third supply substrate 11 in the step of FIG. 5(f2) of the second embodiment of the present invention. The illustrated replenishment substrate 8 is the same as that shown in FIG. 1(d) of the first embodiment of the present invention.

[0195] The second light-emitting diode supply substrate 200 shown in FIG. 6(g’), obtained by the process of FIG. 6(f’), is the same as those shown in FIGS. 2(g) and 5(g2).

[0196] (Fourth Embodiment) In the above first to third embodiments, as the first mounting step, a step of collectively transferring a plurality of light-emitting diodes 2 from the starting substrate 1 on which the light-emitting diodes 2 are manufactured to the first supply substrate 4 is shown in FIGS. 1(a) and 4(a2). This can be realized because when the light-emitting diodes 2 are blue and green light-emitting diodes, the interface between the starting substrate (sapphire substrate) 8 and the light-emitting diodes 2 is the GaN layer. More specifically, the GaN layer at the interface is ablated and N sublimes, so that the light-emitting diodes 2 are peeled off from the starting substrate 8 and ejected. Further, in the case of blue and green light-emitting diodes, it is possible because the electrodes are in a lateral structure formed on the same surface side.

[0197] However, in the case of red diodes, the starting substrate itself is formed on a GaAs substrate, and the so-called vertical structure in which the normal electrodes are formed so as to sandwich the light-emitting diodes has been the mainstream. If this is directly mounted on a display panel and used, since the structure is different from that of the blue and green lateral structure light-emitting diodes, there is a problem that the electrode connection becomes even more complicated. To overcome this problem, in recent years, lateral structure red light-emitting diodes have been manufactured and distributed.

[0198] FIG. 7 is a partial explanatory view of a method for manufacturing a light-emitting diode supply substrate according to the fourth embodiment of the present invention.

[0199] In FIG. 7, 21 is a starting substrate (sapphire substrate), and 22 is a red light-emitting diode. 23 and 24 are electrodes provided on the light-emitting diode, and the electrode 23 and the electrode 24 are respectively connected to the conductive layers on the opposite surfaces of the red diode 22. Thus, the red light-emitting diode 22 has an electrode structure in a lateral configuration. The red light-emitting diode 22 is fixed to the starting substrate 21 by an adhesive layer 25. Generally, a resin such as BCB (Benzocyclobutene) is used for the adhesive layer 25. Further, 4 is a first supply substrate, which includes a substrate 41 and an adhesive layer 42 formed thereon.

[0200] In the fourth embodiment, as shown in FIG. 7(a4), the starting substrate 21 and the first supply substrate 4 are arranged to face each other in parallel, and adjusted so that there is a constant distance in the plane. In this state, a part of the adhesive layer 25 is ablated by the laser lift-off method, and the red light-emitting diode 22 fixed to the starting substrate 21 by the adhesive layer 25 is transferred to the first supply substrate 4.

[0201] In this case, since the BCB residue of the adhesive layer 25 remains on the red light-emitting diode 22, a step of removing the BCB residue by a wet process or chemical etching by a dry process (not shown) is required.

[0202] In this way, the first supply substrate 4 (FIG. 7(b2)) is completed. After that, for example, a second supply substrate 5 that does not include defective light-emitting diodes can be manufactured using the method shown in the first embodiment or the second embodiment of the present invention.

[0203] Note that the normal / defect determination of the red light-emitting diode 22 may be performed by the photoluminescence method in a state where the red light-emitting diode 22 is fixed to the starting substrate 1.

[0204] As described above, supply substrates for light-emitting diodes for manufacturing light-emitting diode displays can be manufactured for light-emitting diodes of each color of blue, green, and red.

[0205] (Fifth Embodiment) In the first to fourth embodiments, in the first mounting process, the laser light 6 is scanned while providing a constant gap between the starting substrate 1 and the first supply substrate 4 by the laser lift-off method, and the light-emitting diodes 2 or 22 of each color are collectively mounted on the first supply substrate 4. Also, in the collective transfer from the first supply substrate 4 to the second supply substrate 5, a constant gap is provided between the two substrates. The merit in this case is that the same adhesive material can be used for the adhesive layers on the first supply substrate 4 and the second supply substrate 5.

[0206] However, it is possible to perform the collective transfer without necessarily opening a gap.

[0207] FIG. 8 is a partial explanatory view of a method for manufacturing a light-emitting diode supply substrate according to the fifth embodiment of the present invention. FIG. 8(a 5-1 ) corresponds to FIG. 1(a), FIG. 8(a 5-2 ) corresponds to FIG. 7(a4), and FIG. 8(f5) corresponds to FIG. 2(f).

[0208] As shown in FIG. 8(a 5-1 ), FIG. 8(a 5-2 ), and FIG. 8(f5), when transferring the light-emitting diodes 2 or 22 by the laser lift-off method without providing a gap, in any case, it is advisable to apply a little pressure to obtain the tacking effect of the adhesive layers 42 and 52.

[0209] In the cases of FIG. 8(a 5-1 ) and FIG. 8(a 5-2 ), since the light-emitting diodes 2 and 22 are peeled off from the starting substrate (sapphire substrate) 1 and the adhesive layer 25, respectively, the above-described pressure functions effectively.

[0210] In the case of FIG. 8(f5), by using a material in which the adhesive force (including the tack force) of the adhesive layer 52 is greater than that of the adhesive layer 42, the collective transfer by the laser lift-off method is realized.

[0211] In addition, other steps in the fifth embodiment may be the same as those in the other steps of the first embodiment or the second embodiment, for example.

[0212] By using the second light-emitting diode supply substrate 200 manufactured by the method for manufacturing a light-emitting diode supply substrate according to the second to fourth embodiments, in the same manner as when using the second light-emitting diode supply substrate 200 manufactured by the method for manufacturing a light-emitting diode supply substrate according to the first embodiment, for example, a light-emitting diode display (or a divided unit or a panel of a light-emitting diode display) 300 can be manufactured according to the procedure shown in FIG. 3.

[0213] [Method for Manufacturing a Light-Emitting Diode Display and Method for Manufacturing a Divided Unit of a Light-Emitting Diode Display] The method for manufacturing a light-emitting diode display of the present invention includes a step of manufacturing the light-emitting diode supply substrate by the method for manufacturing a light-emitting diode supply substrate of the present invention, and a step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate onto a display panel substrate. It is characterized by having the above steps.

[0214] In addition, the method for manufacturing a divided unit of a light-emitting diode display of the present invention includes a step of manufacturing the light-emitting diode supply substrate by the method for manufacturing a light-emitting diode supply substrate of the present invention, and a step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate onto a divided unit of a light-emitting diode display. It is characterized by having the above steps.

[0215] In the method for manufacturing a light-emitting diode display and the method for manufacturing a divided unit of a light-emitting diode display according to the present invention, a light-emitting diode supply substrate is manufactured by the method for manufacturing a light-emitting diode supply substrate according to the present invention, and a plurality of light-emitting diodes are transferred onto a light-emitting diode display substrate or a divided unit of a light-emitting diode display using this substrate. Therefore, a light-emitting diode display or a divided unit of a light-emitting diode display that does not include defective light-emitting diodes can be efficiently manufactured. That is, according to the method for manufacturing a light-emitting diode display of the present invention, a light-emitting diode display can be manufactured with a high yield. Further, according to the method for manufacturing a divided unit of a light-emitting diode display of the present invention, a divided unit of a light-emitting diode display can be manufactured with a high yield.

[0216] The step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate onto the display panel substrate is preferably performed by a laser lift-off method. By doing so, a plurality of light-emitting diodes can be transferred at a higher speed, and thus a more practical method for manufacturing a light-emitting diode display can be provided.

[0217] Similarly, the step of transferring the plurality of light-emitting diodes on the light-emitting diode supply substrate onto the divided unit of the light-emitting diode display is preferably performed by a laser lift-off method. By doing so, a plurality of light-emitting diodes can be transferred at a higher speed, and thus a more practical method for manufacturing a divided unit of a light-emitting diode display can be provided.

[0218] Specific examples of the method for manufacturing a light-emitting diode display and the method for manufacturing a divided unit of a light-emitting diode display according to the present invention are the examples described with reference to FIGS. 1 to 3.

[0219] In addition, according to the method for manufacturing a light-emitting diode display of the present invention and the method for manufacturing a divided unit of the light-emitting diode display of the present invention, for example, a large-screen display with high resolution and its divided unit can be manufactured. However, according to the method for manufacturing a light-emitting diode display of the present invention and the method for manufacturing a divided unit of the light-emitting diode display of the present invention, by using the light-emitting diode supply substrate manufactured by the method for manufacturing the light-emitting diode supply substrate of the present invention, display function units such as a wristwatch-sized healthcare device, a composite device, an in-vehicle head-up display or a navigation system display, a visual expansion device such as AR / VR / MR, and a glasses-type display device can be provided. As a result, electric and electronic devices equipped with the above light-emitting diode display or its divided unit can be manufactured and provided with high yield.

[0220] [Method for manufacturing an element supply substrate] The method for manufacturing an element supply substrate of the present invention is a method for manufacturing an element supply substrate for transferring a plurality of elements to a supply destination, a first mounting step of mounting a plurality of elements on a supply substrate, a selective removal step of selectively removing defective elements on the supply substrate, and a second mounting step of transferring normal elements to positions where the defective elements on the supply substrate were arranged. It is characterized by including the above.

[0221] In the method for manufacturing a light-emitting diode supply substrate of the present invention, when elements such as micro electrical elements and micro semiconductor chips are applied instead of light-emitting diodes, an element supply substrate that can be used for three-dimensional mounting and the manufacture of electric and electronic devices can be manufactured.

[0222] By using the element supply substrate manufactured in this way, a plurality of normal elements can be collectively transferred to a supply destination by the laser lift-off method or the stamping method. That is, according to the method for manufacturing an element supply substrate of the present invention, an element supply substrate capable of collectively transferring a plurality of normal elements to a supply destination can be manufactured. Further, an element at a desired position on the element supply substrate manufactured according to the present invention can be selected and a normal element can be transferred to a supply destination by the laser lift-off method. That is, an element supply substrate capable of transferring a normal element regardless of which position is selected can be manufactured.

[0223] And such a method for manufacturing an element supply substrate can be used, for example, for three-dimensional mounting and the manufacture of electric and electronic devices.

[0224] Examples of the micro electrical elements include resistors, capacitors, and inductors. Examples of the micro semiconductor chips include Si-CMOS semiconductor ICs, LSIs, discrete semiconductors such as diodes, and compound semiconductor chips. Further, MEMS elements such as acceleration sensors can also be handled.

[0225] Note that the present invention is not limited to the above-described embodiment. The above-described embodiment is an example, and any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits the same operational effects is included in the technical scope of the present invention.

Explanation of Reference Numerals

[0226] 1, 21... starting substrate, 2... light-emitting diode (blue light-emitting diode, green light-emitting diode), 2’... defective light-emitting diode, 3, 23, 24... electrodes, 4... first supply substrate, 5... second supply substrate, 6... laser light, 7... container, 8... replenishment substrate, 9... normal light-emitting diode, 10... position where defective light-emitting diode was arranged, 11... third supply substrate, 22... red light-emitting diode, 25... adhesive layer, 42, 52... adhesive layers, 39... destination (light-emitting diode display substrate), 41, 51... substrates, 100... first light-emitting diode supply substrate, 200... second light-emitting diode supply substrate, 300... light-emitting diode display (light-emitting diode display panel).

Claims

1. A method for manufacturing a display panel substrate having light emitting diodes arranged thereon, comprising the steps of: A step A includes preparing a starting substrate having a plurality of light emitting diodes via a GaN layer, the starting substrate having electrodes formed on the light emitting diodes on the opposite side to the starting substrate; A step B of preparing a first supply substrate having a quartz substrate and an adhesive layer provided on the quartz substrate; A step C of transferring the plurality of light emitting diodes of the starting substrate onto the adhesive layer of the first supply substrate by a laser lift-off method; a step D of selectively removing defective light emitting diodes from the plurality of light emitting diodes transferred onto the first supply substrate by irradiating them with laser light; Step E: Re-adhering a normal light-emitting diode to the exposed adhesive layer after the defective light-emitting diode is removed; and A process F of arranging the plurality of light emitting diodes in which the defective light emitting diodes have been replaced with the normal light emitting diodes on a display panel substrate. A method for manufacturing a display panel substrate having light emitting diodes arranged thereon.

2. 2. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 1, wherein said step F is carried out by a stamping method.

3. The step F comprises: A step F1 of preparing a second supply substrate having a quartz substrate and an adhesive layer provided on the quartz substrate; a process F2 of transferring the plurality of light emitting diodes in which the defective light emitting diodes have been replaced with the normal light emitting diodes onto the adhesive layer of the second supply substrate and inverting the plurality of light emitting diodes so that the electrodes face away from the adhesive layer; and Step F3: disposing the plurality of light emitting diodes on the second supply substrate on the display panel substrate.

2. A method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 1, comprising the steps of:

4. 4. The method for manufacturing a display panel substrate having light-emitting diodes arranged thereon according to claim 1, further comprising, before step D, a determination step of determining whether or not each of the light-emitting diodes on the first supply substrate is normal.

5. 5. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 1, wherein the adhesive layer constituting the first supply substrate is obtained from a pressure sensitive adhesive containing silicone.

6. 5. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 1, wherein the adhesive layer constituting the first supply substrate is a silicone resin layer.

7. 4. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 3, wherein the adhesive strength of the adhesive layer constituting the second supply substrate is greater than the adhesive strength of the adhesive layer constituting the first supply substrate.

8. 4. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 3, wherein the tack strength of the adhesive layer constituting the second supply substrate is greater than the tack strength of the adhesive layer constituting the first supply substrate.

9. 9. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 1, wherein the quartz substrate constituting the first supply substrate is made of synthetic quartz.

10. 9. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 3, wherein the quartz substrate constituting the second supply substrate is made of synthetic quartz.

11. 11. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 1, wherein the quartz substrate constituting the first supply substrate has an in-plane film thickness uniformity of 1 μm or less.

12. 11. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to claim 3, 7, 8 or 10, wherein the quartz substrate constituting the second supply substrate has an in-plane film thickness uniformity of 1 [mu]m or less.

13. The method for manufacturing a display panel substrate having a light-emitting diode arranged thereon according to any one of claims 1 to 12, wherein the starting substrate having a plurality of light-emitting diodes via the GaN layer comprises a sapphire substrate and a blue or green light-emitting diode manufactured on the sapphire substrate.

14. The method for manufacturing a display panel substrate having light emitting diodes arranged thereon according to any one of claims 1 to 13, wherein the display panel substrate is a divided unit.

15. A method for producing a light-emitting diode display, comprising the step of producing a display panel substrate by the method for producing a display panel substrate having light-emitting diodes arranged thereon according to any one of claims 1 to 14.

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