MEMS Module and Method for Manufacturing the Same

Abstract

To provide a MEMS module capable of deriving a change of external air pressure with sufficient accuracy, and a method of manufacturing the MEMS module.SOLUTION: A MEMS module includes: a first MEMS element and a second MEMS element each including a movable portion which is a portion of a substrate in which a hollow portion is formed, the movable portion configured to warp in shape according to an air pressure difference between an internal air pressure inside the hollow portion and an external air pressure outside the hollow portion; and an electronic component configured to calculate a change in the external air pressure outside the substrate by using an amount of warpage of the movable portion of at least one of the first MEMS element and the second MEMS element. The amount of warpage of the movable portion according to the external air pressure outside differs between the first MEMS element and the second MEMS element.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] This embodiment relates to a MEMS module and a method for manufacturing the same.

[0002] A MEMS (Micro Electro Mechanical System) element, which is a device in which mechanical element parts and electronic circuits are integrated using microfabrication technology used in the manufacture of semiconductor integrated circuits, is known. As a pressure sensor, a MEMS element having a movable part (also referred to as a membrane) for detecting external air pressure is used.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in a pressure sensor using a MEMS element, since the sensitivity detected by the movable part varies depending on the shape of the movable part, it may be difficult to accurately detect the pressure in all pressure regions with a single MEMS element.

[0005] One aspect of this embodiment provides a MEMS module capable of more accurately deriving a change in external air pressure. Another aspect of this embodiment provides a method for manufacturing the MEMS element.

[0006] This embodiment enables the MEMS module to more accurately derive a change in external air pressure by including a plurality of MEMS elements included in the MEMS module. One aspect of this embodiment is as follows.

[0007] One aspect of this embodiment is of the substrate inside first, with the formed perimeter sealed a hollow portion and, inside the substrate, arranged adjacent to the first hollow portion which is part of the substratefirst Movable part having The movable part is first a first MEMS element whose shape bends according to the pressure difference between the internal pressure and the external pressure inside the hollow part first a second MEMS element, and the first movable part and the second movable part at least one of them of uses the amount of bending to calculate the change in the pressure of the substrate outside and includes an electronic component for calculating the change in pressure of the substrate part, and the first movable part and the second movable part have different amounts of bending according to the external pressure is MEMS module a .

[0008] Also, another aspect of the present embodiment is A method for manufacturing a MEMS module according to one aspect of the above-described embodiment, forming a plurality of groove portions in the semiconductor layer included in the substrate, etching the semiconductor layer in a direction perpendicular to the depth direction of the groove portion from the bottom surface of the groove portion to connect the plurality of groove portions, performing a heat treatment on the semiconductor layer, and a part of the semiconductor layer melted by the heat treatment closes both ends in the depth direction of the groove portion first to form a hollow portion and the second hollow portion and, when viewed from the thickness direction of the substrate first forming an upper layer portion which is a part of the movable portion in contact with the hollow portion first forming a film forming portion which is a part of the movable portion in the thickness direction of the substrate first to form a first MEMS element Form a second upper layer portion, which is a part of the second movable portion in contact with the second hollow portion, as viewed in the thickness direction of the substrate. forming a second MEMS element, and forming an electronic component to which the output signals of the first MEMS element and the second MEMS element are input on the substrate, which is a method for manufacturing a MEMS module Then, form a first is a part of the movable part first film forming part to form a first MEMS element to be laminated on the first upper layer portion, and form a second film-forming portion, which is a part of the second movable portion to be laminated on the second upper layer portion, in the thickness direction of the substrate forming a second MEMS element, and forming an electronic component to which the output signals of the first MEMS element and the second MEMS element are input on the substrate, which is a method for manufacturing a MEMS module

Advantages of the Invention

[0009] According to the present embodiment, it is possible to provide a MEMS module capable of more accurately deriving changes in external air pressure. In addition, it is possible to provide a method for manufacturing the MEMS module

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

Figure 25

Figure 26

Figure 27

Figure 28

Figure 29

Figure 30

Figure 31

Figure 32

Best Mode for Carrying Out the Invention

[0011] Next, with reference to the drawings, this embodiment will be described. In the description of the drawings given below, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions of each component is different from the actual one. Therefore, specific thicknesses and dimensions should be determined with reference to the following description. Also, it goes without saying that there are parts where the dimensional relationships and ratios are different between the drawings.

[0012] Also, the embodiments shown below exemplify devices and methods for embodying the technical idea, and do not specify the materials, shapes, structures, arrangements, etc. of each component. Various modifications can be made to this embodiment within the scope of the claims.

[0013] One aspect of the specific embodiment is as follows.

[0014] <1> A MEMS module including first and second MEMS elements each having a movable part that is a part of a substrate with a hollow part formed therein, wherein the movable part deflects in shape according to the pressure difference between the internal pressure and the external pressure of the hollow part, and an electronic component that calculates a change in the external pressure of the substrate using the amount of deflection of the movable part of at least one of the first and second MEMS elements, and in the first and second MEMS elements, the amount of deflection of the movable part according to the external pressure is different.

[0015] <2> The MEMS module according to <1>, wherein the first and second MEMS elements are included in different chip components, and the respective chip components are arranged separately.

[0016] <3> The MEMS module according to <1>, wherein the first MEMS element and the second MEMS element are included in the same chip component.

[0017] <4> The MEMS module according to any one of <1> to <3>, wherein the film thickness of the movable part in contact with the hollow part of the second MEMS element is thicker than the film thickness of the movable part in contact with the hollow part of the first MEMS element.

[0018] <5> The MEMS module according to <4>, wherein the movable part includes an upper layer part in contact with the hollow part in the thickness direction of the substrate and a film forming part laminated on the upper layer part.

[0019] <6> The MEMS module according to <5>, wherein the movable parts of the first MEMS element and the second MEMS element further have a protective film laminated on the film forming part, and the material of the protective film includes at least one of silicon oxide or silicon nitride.

[0020] <7> The MEMS module according to any one of <1> to <6>, wherein the area of the movable part in contact with the hollow part of the second MEMS element is smaller than the area of the movable part in contact with the hollow part of the first MEMS element when viewed from the thickness direction of the substrate.

[0021] <8> The MEMS module according to any one of <1> to <7>, wherein the electronic component is included in a chip component for an electronic component different from the first MEMS element and the second MEMS element, and the first MEMS element and the second MEMS element are arranged on the chip component for the electronic component.

[0022] <9> The MEMS module according to any one of <1> to <7>, wherein the electronic component is included in the same chip component as the first MEMS element and the second MEMS element.

[0023] <10> Form a plurality of grooves in the semiconductor layer included in the substrate, etch the semiconductor layer in a direction perpendicular to the depth direction of the groove from the bottom surface of the groove to connect the plurality of grooves, perform heat treatment on the semiconductor layer, and a part of the semiconductor layer melted by the heat treatment closes both ends in the depth direction of the groove to form a hollow portion. When viewed from the thickness direction of the substrate, form an upper layer portion which is a part of the movable portion in contact with the hollow portion, form a film formation portion which is a part of the movable portion in the thickness direction of the substrate to form a first MEMS element and a second MEMS element, and form an electronic component into which the output signals of the first MEMS element and the second MEMS element are input on the substrate. A method for manufacturing a MEMS module.

[0024] <11> The second MEMS element is formed on the substrate together with the first MEMS element and is configured as different chip components after dicing. The method for manufacturing a MEMS module according to <10>.

[0025] <12> The second MEMS element is formed on the substrate together with the first MEMS element and is configured as the same chip component. The method for manufacturing a MEMS module according to <10>.

[0026] <13> In forming the movable portion, the film thickness of the movable portion in contact with the hollow portion of the second MEMS element is formed thicker than the film thickness of the movable portion in contact with the hollow portion of the first MEMS element. The method for manufacturing a MEMS module according to any one of <10> to <12>.

[0027] <14> The movable portion includes an upper layer portion in contact with the hollow portion in the thickness direction of the substrate and a film formation portion laminated on the upper layer portion. The method for manufacturing a MEMS module according to <13>.

[0028] <15> The movable portions of the first MEMS element and the second MEMS element further form a protective film laminated on the film formation portion in the thickness direction of the substrate. The method for manufacturing a MEMS module according to <14>.

[0029] <16> In the step of forming the plurality of groove portions, by forming a smaller number of the plurality of groove portions, the area of the movable portion in contact with the hollow portion of the second MEMS element is formed to be smaller than the area of the movable portion in contact with the hollow portion of the first MEMS element when viewed from the thickness direction of the substrate, according to the manufacturing method of the MEMS module according to any one of <10> to <15>.

[0030] <17> The electronic component is formed on the substrate and diced after formation to form a chip component for the electronic component, according to the manufacturing method of the MEMS module according to any one of <10> to <16>.

[0031] <18> The electronic component is formed on the substrate separately from the first MEMS element and the second MEMS element, according to the manufacturing method of the MEMS module according to any one of <10> to <16>.

[0032] The MEMS module A1 according to the present embodiment will be described.

[0033] (First Embodiment) (MEMS Module) FIG. 1 is an example of a perspective view showing the MEMS module A1. FIG. 2 is an example of a perspective view of the main part with a part of the configuration (such as the cover 6 and the bonding material 7 described later) of the MEMS module A1 shown in FIG. 1 omitted. FIG. 3 is an example of a cross-sectional view taken along the line A-A of FIG. 1.

[0034] As shown in FIGS. 1 and 2, the MEMS module A1 according to the present embodiment includes a substrate 1, an electronic component 2, a plurality of MEMS elements (for example, a first MEMS element 3 and a second MEMS element 9), a plurality of wirings 4, a cover 6, and a bonding material 7.

[0035] The chip components ChipA, Chip1, and Chip2 include a substrate 30 formed by dicing a semiconductor wafer into chips. The substrate 30 is, for example, a semiconductor wafer on which first and second MEMS elements (3, 9) and electronic components 2 are formed and then diced into chips. The chip component ChipA includes the substrate 30 on which the electronic components 2 are formed and processes the electrical signals detected by the MEMS elements. Also, the chip components Chip1 and Chip2 each include the substrate 30 on which the first MEMS element 3 and the second MEMS element 9 are formed, detect the air pressure, and output the detection result as an electrical signal. In the following description, the plurality of MEMS elements will be described as the first MEMS element 3 and the second MEMS element 9. Note that the plurality of MEMS elements may be three or more.

[0036] Also, in the present embodiment, the direction along the short side direction of the MEMS module A1 is defined as the x direction (x1 - x2 direction), the direction along the long side direction is defined as the y direction (y1 - y2 direction), and the thickness direction (planar view direction) is defined as the z direction (z1 - z2 direction). In the present embodiment, for the MEMS module A1, for example, the dimension in the x direction is about 2 mm, the dimension in the y direction is about 4 mm, and the dimension in the z direction is about 0.8 mm to 1 mm.

[0037] The MEMS module A1 according to the present embodiment is for detecting air pressure and is, for example, surface-mounted on a circuit board of various electronic devices such as a mobile terminal. For example, in a mobile terminal, the MEMS module A1 detects the atmospheric pressure. The detected atmospheric pressure is used as information for calculating the altitude.

[0038] As shown in FIG. 3, the substrate 1 is a member for mounting the electronic component 2 and mounting the MEMS module A1 on the circuit board of various electronic devices. As shown in FIG. 3, the substrate 1 has a base material 1A, a wiring portion 1B, and an insulating layer 1C. Note that the specific configuration of the substrate 1 is not particularly limited as long as it can appropriately support the electronic component 2 and electronic elements such as the first MEMS element 3 and the second MEMS element 9. For example, a printed circuit board or the like can be used. In the following description, the first MEMS element 3 and the second MEMS element 9 may also be referred to as the first and second MEMS elements (3, 9).

[0039] The base material 1A is formed of an electrical insulator and is a main component of the substrate 1. Examples of the base material 1A include glass epoxy resin, polyimide resin, phenolic resin, and ceramics. The base material 1A is, for example, in the shape of a rectangular plate in plan view and has a mounting surface 1a and a mounting surface 1b. The mounting surface 1a and the mounting surface 1b face opposite sides in the thickness direction (z direction) of the substrate 1. The mounting surface 1a is a surface facing the z1 direction and is the surface on which the electronic component 2 is mounted. The mounting surface 1b is a surface facing the z2 direction and is the surface used when mounting the MEMS module A1 on the circuit board of various electronic devices. In the present embodiment, the dimension of the substrate 1 in the x direction is about 2 mm, the dimension in the y direction is about 4 mm, and the dimension in the z direction is about 100 to 200 μm.

[0040] The wiring portion 1B forms a conduction path for conducting the electronic component 2 and the first and second MEMS elements (3, 9) to a circuit outside the MEMS module A1. The wiring portion 1B contains, for example, one or more alloys such as Cu, Ni, Ti, and Au, and is formed, for example, by plating. In the present embodiment, the wiring portion 1B has a plurality of mounting surface portions 100 and back surface pads 19, but these are an example of the specific configuration of the wiring portion 1B, and the configuration is not particularly limited.

[0041] As shown in FIG. 2, the plurality of mounting surfaces 100 are formed on the mounting surface 1a of the base material 1A and are a plurality of independent regions spaced apart from each other. As shown in FIG. 3, the mounting surface portion 100 has electrode pads 11, and the end portions of the wiring 4 are bonded to the electrode pads 11.

[0042] The back surface pad 19 is provided on the mounting surface 1b and is used as an electrode to be conductively joined when mounting the MEMS module A1 on a circuit board or the like. The back surface pad 19 is in conduction with an appropriate position of the mounting surface portion 100.

[0043] The insulating layer 1C insulates and protects the relevant part by covering an appropriate position of the wiring part 1B. The insulating layer 1C contains an insulating material and is formed of, for example, a resist resin. The insulating layer 1C may be formed, for example, in a rectangular ring shape in plan view.

[0044] The bonding material 7 bonds the substrate 1 and the cover 6 and has, for example, a paste bonding material containing a metal such as Ag. In the present embodiment, the bonding material 7 is provided in a rectangular ring shape in plan view and is formed in a region where all of it overlaps with the insulating layer 1C.

[0045] The electronic component 2 processes the electrical signals detected by the sensors and is configured as a so-called ASIC (Application Specific Integrated Circuit) element. The electronic component 2 may include, for example, a temperature sensor, and processes the electrical signals detected by the temperature sensor and the electrical signals detected by the first MEMS element 3 or the second MEMS element 9. The electronic component 2 multiplexes the electrical signals detected by the temperature sensor and the electrical signals detected by the first MEMS element 3 or the second MEMS element 9 with a multiplexer and converts them into digital signals with an analog / digital conversion circuit. Then, based on the clock signal, the signal processing unit performs processes such as amplification, filtering, and logical operations while using the storage area of the storage unit. The signal after signal processing is output via the interface. Thereby, the MEMS module A1 can output the signals detecting the atmospheric pressure and the atmospheric temperature after performing appropriate signal processing.

[0046] The electronic component 2 is for control in which various elements are mounted on a substrate and packaged. As shown in FIGS. 2 and 3, the electronic component 2 is in the shape of a rectangular plate in plan view and is included in the electronic component chip part ChipA having a mounting surface 2a and a mounting surface 2b. The mounting surface 2a and the mounting surface 2b face opposite sides in the thickness direction (z direction) of the electronic component 2. The mounting surface 2a is the surface facing the z1 direction and is the surface on which the first MEMS element 3 is mounted. The mounting surface 2b is the surface facing the z2 direction and is the surface used when mounting the electronic component 2 on the mounting surface 1a of the substrate 1. In the present embodiment, for example, the dimension of the electronic component 2 in the x direction is about 1 to 1.2 mm, the dimension in the y direction is about 2 to 2.4 mm, and the dimension in the z direction is about 80 μm.

[0047] The electronic component 2 is mounted on the mounting surface 1a of the substrate 1. The electronic component 2 and the substrate 1 may be physically joined by a die attach film (not shown) or the like. A plurality of electrode pads 24 are provided on the mounting surface 2a of the electronic component 2. The electrode pads 24 are used as electrodes that are conductively joined (electrically connected) to the electrode pads 11 of the substrate 1. Wiring 4 is bonded to the electrode pads 24. The electrode pads 24 are made of a metal such as Al or an aluminum alloy, and are formed, for example, by sputtering or plating. In the present embodiment, an Al layer formed by sputtering is used as the electrode pad 24. The electrode pads 24 are connected to the wiring pattern on the mounting surface 2a and are arranged so as to surround the regions where the first MEMS element 3 and the second MEMS element 9 are mounted. Note that in this specification and the like, "electrically connected" includes cases where connection is made through "something having some electrical action". Here, "something having some electrical action" is not particularly limited as long as it enables the transfer of electrical signals between the connection targets. For example, "something having some electrical action" includes electrodes, wirings, switching elements, resistance elements, inductors, capacitance elements, and other elements having various functions. Note that the electronic component 2 and the substrate 1 may be electrically joined through bumps provided on the electronic component 2 at the mounting surface 2b of the electronic component 2. The joining method of the electronic component 2 and the substrate 1 is not limited to this.

[0048] In the first embodiment, the first and second MEMS elements (3, 9) are configured as barometric pressure sensors for detecting barometric pressure. The first MEMS element 3 is, for example, a pressure sensor that detects barometric pressure in a low barometric pressure region (e.g., 1 to 1013 hPa: about 1 atmosphere). The second MEMS element 9 is, for example, a pressure sensor that detects barometric pressure in a high barometric pressure region (e.g., about 2000 to 7000 hPa). The first and second MEMS elements (3, 9) detect barometric pressure and output the detection result as an electrical signal to the electronic component 2. As shown in FIGS. 2 and 3, the first MEMS element 3 is included, for example, in a chip component Chip1 having a main surface 3a and a mounting surface 3b. The second MEMS element 9 is included, for example, in a chip component Chip2 having a main surface 9a and a mounting surface 9b. That is, the first MEMS element 3 and the second MEMS element 9 are configured in different chip components. Also, the first and second MEMS elements (3, 9) may have a rectangular parallelepiped shape or a cubic shape.

[0049] The main surface 3a and the mounting surface 3b face opposite sides in the thickness direction (z direction) of the first MEMS element 3. The main surface 3a is a surface facing in the z1 direction. The mounting surface 3b is a surface facing in the z2 direction and is the surface used when mounting the first MEMS element 3 on the electronic component 2. Also, the main surface 9a and the mounting surface 9b face opposite sides in the thickness direction (z direction) of the second MEMS element 9. The main surface 9a is a surface facing in the z1 direction. The mounting surface 9b is a surface facing in the z2 direction and is the surface used when mounting the second MEMS element 9 on the electronic component 2. In the first embodiment, the dimensions of the first and second MEMS elements (3, 9) in the z direction are, for example, about 200 to 300 μm, and the dimensions in the x direction and the y direction are, for example, about 0.7 to 1.0 mm each.

[0050] The first and second MEMS elements (3, 9) are mounted on the mounting surface 2a of the electronic component 2. The first and second MEMS elements (3, 9) and the electronic component 2 may be joined by a silicone resin, a die attach film, etc. not shown. Also, in the y direction, the first and second MEMS elements (3, 9) are spaced apart from each other.

[0051] On the main surface 3a of the first MEMS element 3, a plurality of electrode pads 34 are provided. The electrode pads 34 are used as electrodes that are conductively bonded to the electrode pads 11 of the substrate 1. Also, on the main surface 9a of the second MEMS element 9, a plurality of electrode pads 94 are provided. The electrode pads 94 are used as electrodes that are conductively bonded to the electrode pads 11 of the substrate 1. Wiring 4 is bonded to the electrode pads (34, 94). The electrode pads (34, 94) are made of a metal such as Al or an aluminum alloy, and are formed, for example, by sputtering or plating. In the present embodiment, an Al layer formed by sputtering is used as the electrode pads (34, 94). The electrode pads (34, 94) are connected to the wiring patterns on the main surfaces (3a, 9a).

[0052] The wiring 4 electrically connects the electrode pads 11 of the substrate 1 to the electrode pads 24 of the electronic component 2, the electrode pads 34 of the first MEMS element 3, and the electrode pads 94 of the second MEMS element 9, and contains a metal such as Au, for example. Note that the material of the wiring 4 is not limited, and may be, for example, Al, Cu, or the like. The wiring 4 is bonded to the electrode pads 11, the electrode pads 24, the electrode pads 34, and the electrode pads 94.

[0053] As shown in FIG. 3, the cover 6 is a box-shaped member made of metal, and is joined to the mounting surface 1a of the substrate 1 by a bonding material 7 so as to surround the electronic component 2, the first MEMS element 3, the second MEMS element 9, and the wiring 4. In the illustrated example, the cover 6 is rectangular in plan view. Note that the cover 6 may be made of a material other than metal. Also, the manufacturing method of the cover 6 is not particularly limited. The space between the cover 6 and the substrate 1 is in a state of being filled with a soft resin such as a hollow or silicone resin.

[0054] As shown in FIGS. 1 and 3, the cover 6 has an opening 61 and an extension 62. The opening 61 is for taking in outside air inside. By providing the opening 61 and being in a state filled with a soft resin such as hollow or silicone resin, the first and second MEMS elements (3, 9) can detect the air pressure (for example, atmospheric pressure) around the MEMS module A1, and the temperature sensor of the electronic component 2 can detect the air temperature around the MEMS module A1. In the present embodiment, only one opening 61 is arranged at a position on the z1-direction side of the electrode pad 24 of the electronic component 2. Note that the number of the openings 61 is not particularly limited. The extension 62 extends from, for example, the edge of the opening 61 and overlaps at least a part of the opening 61 in plan view. The extension 62 is located in the z2 direction toward the tip and is inclined so as to approach the substrate 1 toward the tip. Further, in the illustrated configuration, the tip of the extension 62 is provided at a position avoiding the electronic component 2 and the first and second MEMS elements (3, 9) in plan view. Similarly, the base of the extension 62 is provided at a position avoiding the electronic component 2 and the first and second MEMS elements (3, 9). Note that the extension 62 may not be provided.

[0055] (Example of internal configuration of MEMS element) An example of the internal configuration of the first and second MEMS elements (3, 9) constituting the MEMS module A1 according to the first embodiment will be described.

[0056] FIG. 4 is an example of a cross-sectional view taken along line A-A of FIG. 1 showing the first MEMS element 3. FIG. 5 is an example of a cross-sectional view taken along line A-A of FIG. 1 showing the second MEMS element 9. FIG. 6 is an example of a plan view showing the first and second MEMS elements.

[0057] The substrates 30 constituting the first and second MEMS elements (3, 9) include a movable part 340, a hollow part 360, and a fixed part 370, as shown in FIGS. 4 and 5. The movable part 340 includes an upper layer part 355 and film-forming parts (350, 351). The film thicknesses of the film-forming parts (350, 351), which are a part of the movable part 340 for detecting changes in external atmospheric pressure, of the first and second MEMS elements (3, 9) are different.

[0058] The substrate 30 includes a semiconductor layer. Examples of the semiconductor layer include a silicon layer. The substrate 30 may be composed of, for example, only a silicon layer, or may be composed of a laminated film of a silicon layer and an oxide film such as a silicon oxide layer.

[0059] As shown in FIGS. 4 and 5, the hollow part 360 is provided inside the substrate 30. The fixed part 370 is a part of the semiconductor layer of the substrate 30 provided in the z2 direction of the hollow part 360. Further, the movable part 340 is provided in the z1 direction of the hollow part 360. The upper layer part 355, which is a part of the movable part 340, is a part of the semiconductor layer of the substrate 30 provided in the z1 direction of the hollow part 360. The film-forming parts (350, 351), which are a part of the movable part 340, are films laminated on the upper layer part 355 provided in the z1 direction of the upper layer part 355.

[0060] The film thicknesses (T1, T2) of the movable part 340 of the first and second MEMS elements (3, 9) are the sum of the film thicknesses of the upper layer part 355 and the film-forming parts (350, 351). Note that the film thicknesses (T1, T2) of the movable part 340 of the first and second MEMS elements (3, 9) may be different by changing the film thickness of the upper layer part 355.

[0061] When viewed from the z - direction, the movable part 340 overlaps with the hollow part 360 and moves in the z - direction to detect the air pressure. In this embodiment, when viewed from the z - direction, the movable part 340 is rectangular. The film thicknesses (T1, T2) of the movable part 340 may be of a thickness such that the shape can be deformed by the difference between the air pressure inside the hollow part 360 and the air pressure outside the hollow part 360. For example, it is 5 - 15 μm. By making the film thickness (T1, T2) of the movable part 340 relatively thin, the air pressure can be detected accurately, and by making it relatively thick, the air pressure in the high - air - pressure region can be detected. In the following description, the air pressure in the high - air - pressure region is also referred to as high air pressure.

[0062] The hollow part 360 is a cavity provided in the substrate 30 and is sealed in this embodiment. The hollow part 360 may be in a vacuum. Also, in this embodiment, although the hollow part 360 is rectangular when viewed from the z - direction, it is not limited to this. The z - direction dimension (depth) of the hollow part 360 is, for example, 5 - 15 μm.

[0063] The fixing part 370 is a part that supports the movable part 340 and is a part fixed to the substrate 1 or the electronic component 2 when the movable part 340 operates. In this embodiment, the part of the substrate 30 other than the movable part 340 and the hollow part 360 is taken as the fixing part 370.

[0064] In this embodiment, the movable part 340 and the fixing part 370 have the same and single semiconductor without having a joint part at their mutual boundary.

[0065] The first and second MEMS elements (3, 9) generate an electrical signal according to the shape (deformation condition) of the movable part 340 that is deformed by the difference between the air pressure inside the hollow part 360 and the air pressure outside the hollow part 360, and output it to the electronic component 2. As shown in FIG. 6, on the main surfaces (3a, 9a) of the first and second MEMS elements (3, 9), a strain gauge resistor 320 whose resistance value changes according to the deformation of the movable part 340 is provided. Further, as shown in FIG. 3, a metal wiring is formed on the main surfaces (3a, 9a) of the first and second MEMS elements (3, 9) by sputtering or the like, and electrode pads (34, 94) are formed at predetermined positions of the metal wiring. Note that for the first and second MEMS elements (3, 9), a protective film (not shown) may be formed on the main surfaces (3a, 9a) of the first and second MEMS elements (3, 9). Examples of the protective film include resin, silicon oxide film, and silicon nitride film.

[0066] Next, a method for manufacturing the MEMS module A1 will be described. In the following description, a method for manufacturing the first and second MEMS elements (3, 9) will be described. A method for manufacturing the electronic component 2 will be omitted.

[0067] First, as shown in FIG. 7, a substrate 30 having a semiconductor layer is prepared. Examples of the semiconductor layer include a silicon layer. The thickness of the substrate 30 is, for example, about 700 to 800 μm.

[0068] Next, as shown in FIG. 8, a plurality of groove portions 31 are formed in the substrate 30. The groove portions 31 can be formed by deep etching such as the Bosch method. As an example of the dimensions and the like of the plurality of groove portions 31, when viewed from the z direction, the diameter of the circular groove portion 31 is 0.2 to 0.8 μm, and the pitch (center-to-center distance) between adjacent groove portions 31 is 0.4 to 1.4 μm. Further, in the present embodiment, the dimensions of the plurality of groove portions 31 when viewed from the z direction are substantially the same.

[0069] Next, as shown in FIG. 9, the substrate 30 is etched in a direction perpendicular to the depth direction of the groove portion from the bottom surface of the groove portion 31 to form a hollow portion 360 that connects the plurality of groove portions 31. In the following description, this is also referred to as the hollow portion forming step. In the hollow portion forming step, isotropic and anisotropic etching are performed such that the cross-sectional area perpendicular to the z direction gradually increases. Thereby, the step of forming the groove portion 31 and the step of forming the cavity portion can be continuously performed by the same process, and the hollow portion 360 can be efficiently formed.

[0070] Next, as shown in FIG. 10, the substrate 30 is heat-treated (for example, at 1100°C to 1200°C) in an atmosphere containing hydrogen to form an upper layer portion 355 that is a part of the movable portion 340. In the following description, this is also referred to as the movable portion forming step. In the movable portion forming step, since a part of the melted substrate 30 closes the groove portion 31 by heat treatment, the hollow portion 360 is sealed. Further, the upper layer portion 355 that is a part of the movable portion 340 has a concave portion. In this manufacturing method, in order to form a part of the movable portion 340 and the hollow portion 360, a step of joining a plurality of different members is not required. Thereby, there is an advantage that there is no possibility of deterioration in airtightness at the joining portion. Further, in order to form the hollow portion 360, there is an advantage that it is not necessary to provide an excessive groove portion that penetrates the substrate 30, for example.

[0071] In the movable portion forming step, the semiconductor layer is partially moved using thermal migration to close the plurality of groove portions 31. For this reason, the upper layer portion 355 that is a part of the movable portion 340 is a portion of the material of the semiconductor layer, and has a configuration that is integrally connected to the fixed portion 370, which is also made of the material of the semiconductor layer, without passing through a joining portion. Thereby, the airtightness of the hollow portion 360 can be enhanced.

[0072] Furthermore, as shown in FIGS. 4 and 5, a film forming portion 350 is formed on the main surface of the substrate 30 facing the z1 direction. For the film forming portion 350, for example, a silicon layer deposited by the CVD method can be used. That is, by depositing a semiconductor layer, the semiconductor layers of the first and second MEMS elements are thickened. The second MEMS element 9 is formed with a thicker film forming portion 350 than the first MEMS element. Therefore, the film thickness T2 of the movable portion 340 of the second MEMS element 9 is thicker than the film thickness T1 of the movable portion 340 of the first MEMS element 3. That is, the second MEMS element 9 can detect a higher air pressure than the first MEMS element 3. Thereby, the first and second MEMS elements (3, 9) can detect air pressures in different pressure ranges. Note that the second MEMS element 9 may be formed, for example, on a semiconductor wafer for the second MEMS element separately from the semiconductor wafer on which the first MEMS element 3 is formed, and a chip component Chip2 may be configured using a substrate that has been diced after formation.

[0073] Through the above steps, the first and second MEMS elements (3, 9) can be manufactured. Also, after manufacturing, the substrate 30 including the first MEMS element 3 or the second MEMS element 9 can be made into different chip components (for example, chip component Chip1, chip component Chip2).

[0074] Next, as shown in FIG. 3, an electronic component 2 is mounted on the substrate 1, and a plurality of chip components including the first and second MEMS elements are mounted on the electronic component 2. Further, a wiring 4 is formed to connect the electrode pad 11 of the substrate 1, the electrode pad 24 of the electronic component 2, the electrode pad 34 of the first MEMS element 3, and the electrode pad 94 of the second MEMS element 9, and finally the cover 6 and the substrate 1 are joined by a joining material 7. Note that the electronic component 2 may be formed on the substrate 30, or may be made into a chip component ChipA using a substrate obtained by dicing a semiconductor wafer for the electronic component separately from the semiconductor wafer on which the first and second MEMS elements (3, 9) are formed.

[0075] Through the above processes, the MEMS module A1 can be manufactured. The MEMS module A1 includes a plurality of MEMS elements (for example, the first MEMS element 3 and the second MEMS element 9) with different film thicknesses of the movable part 340 of the MEMS element on different chip components, so that the pressure in different pressure ranges can be detected without loss of accuracy. Further, since the first and second MEMS elements (3, 9) have different structures due to the film thickness of the movable part 340, in the process of thickening the MEMS element, a plurality of MEMS elements (for example, the first MEMS element 3 and the second MEMS element 9) can be easily formed by forming them on different thick films.

[0076] <Operation example of MEMS module> Hereinafter, an example of the operation of this embodiment will be described. Note that the operation of this embodiment is not limited to the following operation examples.

[0077] FIG. 11 is an equivalent circuit of the MEMS modules A1 to A5 according to this embodiment. In the following description, specifically, the first MEMS module A1 will be described.

[0078] The first MEMS element 3 of the MEMS module A1 includes, for example, four gauge resistors 320 as shown in FIGS. 6 and 11. As shown in FIG. 6, the gauge resistors 320 are arranged, for example, at both ends in the x and y directions of the movable part 340 in contact with the hollow part 360. Further, as shown in FIG. 11, the gauge resistors 320 are electrically connected to adjacent gauge resistors. Furthermore, there are four junction points where the gauge resistors 320 are connected to each other. The first one is connected to the power supply terminal VDD, the second one is connected to the ground terminal GND, the third one is connected to the input terminal INP1 of the electronic component 2, and the fourth one is connected to the input terminal INN1 of the electronic component 2.

[0079] Similarly, the second MEMS element 9 of the MEMS module A1 includes, for example, four strain gauges 320 as shown in FIGS. 6 and 11. As shown in FIG. 6, the strain gauges 320 are arranged, for example, at both ends of the movable part 340 in the x and y directions in contact with the hollow part 360. Further, the strain gauges 320 are electrically connected to adjacent strain gauges. Furthermore, there are four junction points where the strain gauges 320 are connected to each other. The first one is connected to the power supply terminal VDD, the second one is connected to the ground terminal GND, the third one is connected to the input terminal INP2 of the electronic component 2, and the fourth one is connected to the input terminal INN2 of the electronic component 2.

[0080] As shown in FIG. 11, the electronic component 2 is connected to the power supply VDD and the ground terminal GND. The detection results of the first and second MEMS elements (3, 9) are input at the input terminals (INP1, INN1, INP2, INN2). Let the voltage input to the input terminal INP1 be V INP1 , the voltage input to the input terminal INN1 be V INN1 , the voltage input to the input terminal INP2 be V INP2 , and the voltage input to the input terminal INN2 be V INN2 .

[0081] For example, the electronic component 2 detects the external air pressure in a relatively low air pressure region (low air pressure region) by the first MEMS element 3, and detects the external air pressure in a relatively high air pressure region (high air pressure region) by the second MEMS element 9. In the case of the low air pressure region, the electronic component 2 can calculate the change in the air pressure detected by the first MEMS element 3 based on the change (the difference between VINP1 and VINN1) output by the first MEMS element 3 that can accurately detect the air pressure due to the difference in the shape of the movable part 340 because the thickness of the movable part 340 is relatively thin among the first and second MEMS elements. Further, for example, in the case of the high air pressure region, the electronic component 2 can calculate the change in the air pressure detected by the second MEMS element 9 based on the change (the difference between VINP2 and VINN2) output by the second MEMS element 9 that detects the high air pressure due to the difference in the shape of the movable part 340 because the thickness of the movable part 340 is relatively thick among the first and second MEMS elements.

[0082] According to this embodiment, the electronic component 2 and the MEMS module A1 including a plurality of MEMS elements (for example, the first and second MEMS elements (3, 9)) can accurately derive changes in the external air pressure.

[0083] (Second Embodiment) The MEMS module A2 according to the second embodiment will be described.

[0084] FIG. 12 is an example of a perspective view of a main part showing the MEMS module A2 according to the second embodiment. FIG. 13 is an example of a cross-sectional view showing the MEMS module A2 along the line A-A in FIG. 12.

[0085] The difference between the MEMS module A2 according to the second embodiment and the MEMS module A1 according to the first embodiment is that, as shown in FIGS. 12 and 13, the substrate 30A including the first and second MEMS elements (3A, 9A) of the MEMS module A2 according to the second embodiment is formed on the same chip component Chip3. Note that the plurality of MEMS elements may be three or more.

[0086] In the second embodiment, the points common to the first embodiment (for example, the substrate 1, the electronic component 2, the plurality of wirings 4, the cover 6, and the bonding material 7) are applied to the first embodiment, and the differences will be described below.

[0087] FIG. 14 is a cross-sectional view of the first and second MEMS elements (3A, 9A).

[0088] The substrate 30A including the first and second MEMS elements (3A, 9A) includes a movable part 340A, a hollow part 360A, and a fixed part 370A as shown in FIG. 14, similar to the first embodiment. Further, the movable part 340A of the first and second MEMS elements (3A, 9A) includes a protective film 10A in the z1 direction of the film forming part 350A. Also, the movable part 340A of the second MEMS element 9A includes a protective film 10B in the z1 direction of the protective film 10A. The film thickness of the protective film 10A is T3 as shown in FIG. 13. Also, the film thickness of the protective film 10B is T4. That is, the film thickness T5 of the movable part 340A of the first MEMS element 3A is the combined film thickness of T1, which is the combined film thickness of the upper layer part 355 and the film forming part 350, and the film thickness T3 of the protective film 10A. Also, the film thickness T6 of the movable part 340A of the second MEMS element 9A is the combined film thickness of T1, which is the combined film thickness of the upper layer part 355 and the film forming part 350, the film thickness T3 of the protective film 10A, and the film thickness T4 of the protective film 10B. Note that the protective films (10A, 10B) are, for example, a silicon oxide film and a silicon nitride film.

[0089] The second MEMS element 9A is formed to have a thicker film thickness T6 of the movable part 340A than the film thickness T5 of the movable part 340A of the first MEMS element 3A by laminating the protective film 10B on the surface facing the z1 direction of the first MEMS element 3A. That is, the second MEMS element 9A can detect a higher air pressure than the first MEMS element 3.

[0090] Next, a method for manufacturing the MEMS module A2 will be described. In the following description, a method for manufacturing the first and second MEMS elements (3A, 9A) will be described.

[0091] First, a substrate 30A (not shown) having a semiconductor layer is prepared. Examples of the semiconductor layer include a silicon layer. The thickness of the substrate 30A is, for example, about 700 to 800 μm.

[0092] Next, as shown in FIG. 15, a plurality of groove portions 31A are formed in the substrate 30A. The groove portions 31A can be formed, for example, by deep etching such as the Bosch method.

[0093] Next, as shown in FIG. 16, the substrate 30 is etched in a direction perpendicular to the depth direction of the groove portion from the bottom surface of the groove portion 31A to form a hollow portion 360A that connects the plurality of groove portions 31A.

[0094] Next, as shown in FIG. 17, heat treatment (for example, 1100°C to 1200°C) is performed on the substrate 30A in an atmosphere containing hydrogen to form an upper layer portion 355A that is a part of the movable portion 340A.

[0095] Next, as shown in FIG. 18, a film forming portion 350A is formed on the main surface of the substrate 30A facing the z1 direction. For the film forming portion 350A, for example, a silicon layer deposited by CVD can be used. That is, by depositing a semiconductor layer, the semiconductor layers of the first and second MEMS elements are thickened. In the present embodiment, the film thicknesses of the film forming portions 350A of the first and second MEMS elements (3A, 9A) are the same. That is, the combined film thickness T1 of the upper layer portion 355A and the film forming portion 350A of the first and second MEMS elements (3A, 9A) is the same. Note that the film thickness of the film forming portion 350A of the second MEMS element 9A may be made thicker than that of the film forming portion 350A of the first MEMS element 3A.

[0096] Furthermore, as shown in FIG. 14, a protective film (10A, 10B) that is a part of the movable portion 340A is formed with respect to the thickness direction of the film forming portion 350A. Specifically, the protective film 10A is formed with respect to the thickness direction of the film forming portion 350A. Next, for example, the first MEMS element 3A is masked with a resist, and the protective film 10B is laminated on the second MEMS element 9A. Therefore, the film thickness T6 of the movable portion 340 of the second MEMS element 9A is thicker than the film thickness T5 of the movable portion 340 of the first MEMS element 3A. Thereby, since the first and second MEMS elements (3A, 9A) have different film thicknesses in the shape of the movable portion 340, they can accurately detect different pressure ranges respectively.

[0097] By the above processes, the first and second MEMS elements (3A, 9A) can be manufactured. Also, after manufacturing, the first and second MEMS elements (3A, 9A) can be included in the same chip component Chip3 on the substrate 30A.

[0098] Next, as shown in FIG. 13, the electronic component 2 is mounted on the substrate 1, and the same chip component Chip3 including the first and second MEMS elements (3A, 9A) is mounted on the electronic component 2. Further, the wiring 4 is formed to conduct the electrode pad 11 of the substrate 1, the electrode pad 24 of the electronic component 2, the electrode pad 34 of the first MEMS element 3A, and the electrode pad 94 of the second MEMS element 9A. Finally, the cover 6 and the substrate 1 are joined by the joining material 7. Note that the electronic component 2 may be formed on the substrate 30A, or may be made into the chip component ChipA using a substrate obtained by chip - forming a semiconductor wafer for electronic components, which is separate from the semiconductor wafer on which the first and second MEMS elements (3A, 9A) are formed.

[0099] By the above processes, the MEMS module A2 can be manufactured. The MEMS module A2 includes a plurality of different MEMS elements (for example, the first MEMS element 3A, the second MEMS element 9A) in which a part of the movable part 340A of the MEMS element has a thick film thickness in one chip component. By thickening the film thickness of the movable part 340, high air pressure can be detected, and the air pressure in different pressure regions can be detected without degrading the accuracy of the air pressure in the low - pressure region. Further, since the difference in structure is due to the film thickness of the protective film 10B which is a part of the movable part 340, in the process of forming the protective films of the plurality of MEMS elements, the plurality of MEMS elements (for example, the first MEMS element 3A, the second MEMS element 9A) can be easily formed by forming the protective films with different thick films.

[0100] An example of the operation of the second MEMS module A2 can refer to the description of the operation of the above - mentioned MEMS module A1.

[0101] (Third Embodiment) The MEMS module A3 according to the third embodiment will be described.

[0102] FIG. 19 is an example of a cross-sectional view showing the first and second MEMS elements (3B, 9B) in the MEMS module A3. FIG. 20 is an example of a plan view showing the first and second MEMS elements (3B, 9B).

[0103] The difference between the MEMS module A3 according to the third embodiment and the MEMS module A2 according to the second embodiment is that, as shown in FIG. 19, the hollow portion 361B of the second MEMS element 9B is narrower than the hollow portion 360B of the first MEMS element 3B in the y direction. Similarly, although not shown, it is also narrower in the x direction. The hollow portion 361B of the second MEMS element 9B has a smaller area when viewed from the z direction than the hollow portion 360B of the first MEMS element 3B, as shown in FIG. 20. The movable portion 340B of the second MEMS element 9B has a smaller area than the movable portion 340B of the first MEMS element 3B. The movable portion 340B of the second MEMS element 9B can detect high pressure due to the smaller area of the movable portion 340B of the first MEMS element 3B. Also, there is no protective film (10A, 10B). Note that a protective film (10A, 10B) may be provided.

[0104] In the third embodiment, the points common to the first and second embodiments (for example, the substrate 1, the electronic component 2, the plurality of wirings 4, the cover 6, and the bonding material 7) are incorporated from the first and second embodiments. That is, similar to the MEMS module A2 according to the second embodiment, in the MEMS module A3 according to the third embodiment, as shown in FIG. 19, the first and second MEMS elements (3B, 9B) are formed on the substrate 30B. Also, in the MEMS module A3 according to the third embodiment, as shown in FIG. 12, a plurality of MEMS elements are formed in one chip component Chip3. Also, the plurality of MEMS elements may be three or more. Hereinafter, the different points will be described.

[0105] Similar to the first and second embodiments, as shown in FIG. 19, the substrate 30B includes a movable portion 340B, hollow portions (360B, 361B), and a fixed portion 370B. The movable portion 340B includes an upper layer portion 355B and a film forming portion 350B. Note that a protective film may be provided in the z1 direction of the film forming portion 350B.

[0106] Next, a method for manufacturing the MEMS module A3 will be described. In the following description, methods for manufacturing the first and second MEMS elements (3B, 9B) will be described.

[0107] First, a substrate 30B (not shown) having a semiconductor layer is prepared. Examples of the semiconductor layer include a silicon layer. The thickness of the substrate 30B is, for example, about 700 to 800 μm.

[0108] Next, as shown in FIG. 21, a plurality of groove portions (31B, 32B) are formed in the substrate 30B. The plurality of groove portions (31B, 32B) can be formed by, for example, deep etching such as the Bosch method. The number of groove portions 32B constituting the second MEMS element 9B is made smaller than the number of groove portions 31B constituting the first MEMS element 3B.

[0109] Next, as shown in FIG. 22, the substrate 30B is etched in a direction perpendicular to the depth direction of the groove portions from the bottom surfaces of the groove portions 31B and 32B to form hollow portions (360B, 361B) that connect adjacent groove portions.

[0110] Next, as shown in FIG. 23, heat treatment (for example, 1100°C to 1200°C) is performed on the substrate 30B in an atmosphere containing hydrogen to form an upper layer portion 355B that is a part of the movable portion 340B.

[0111] Next, as shown in FIG. 19, a film forming portion 350B is formed on the main surface of the substrate 30B facing the z1 direction. For the film forming portion 350B, for example, a silicon layer deposited by the CVD method can be used. That is, by depositing a semiconductor layer, the semiconductor layers of the first and second MEMS elements (3B, 9B) are thickened. In the present embodiment, the film thicknesses of the film forming portions 350B of the first and second MEMS elements (3B, 9B) are the same. That is, the combined film thickness T1 of the upper layer portion 355B and the film forming portion 350B of the first and second MEMS elements (3B, 9B) is the same. Therefore, the hollow portion 360B of the second MEMS element 9B becomes narrower than the hollow portion 361B of the first MEMS element 3B, and the area becomes smaller. Thereby, since the areas of the first and second MEMS elements (3B, 9B), which are the shapes of the movable portions 340 of the first and second MEMS elements (3B, 9B), are different, the air pressures in different pressure ranges can be accurately detected respectively. Note that the film forming portion 350B of the second MEMS element 9B may be thicker than the film thickness of the film forming portion 350B of the first MEMS element 3B.

[0112] Through the above steps, the first and second MEMS elements (3B, 9B) can be manufactured. Further, after manufacturing, the substrate 30B including the first and second MEMS elements (3B, 9B) can be made into the same chip component Chip3.

[0113] Next, as shown in FIG. 13, an electronic component 2 is mounted on the substrate 1, and the same chip component Chip3 including the first and second MEMS elements (3B, 9B) is mounted on the electronic component 2. Further, a wiring 4 is formed to connect the electrode pad 11 of the substrate 1, the electrode pad 24 of the electronic component 2, the electrode pad 34 of the first MEMS element 3, and the electrode pad 94 of the second MEMS element 9. Finally, the cover 6 and the substrate 1 are joined by a joining material 7. Note that the electronic component 2 may be formed on the substrate 30B, or may be made into a chip component ChipA using a substrate obtained by chipping a semiconductor wafer for electronic components separately from the semiconductor wafer on which the first and second MEMS elements (3B, 9B) are formed.

[0114] Through the above processes, the MEMS module A3 can be manufactured. The MEMS module A3 includes a plurality of different MEMS elements (for example, the first MEMS element 3B and the second MEMS element 9B) with a reduced area of the movable part 340B of the MEMS element in one chip component. By reducing the area of the movable part 340B, high air pressure can be detected, and air pressure in different pressure ranges can be detected without degrading the accuracy of the air pressure in the low air pressure region. Further, since the structures of the first and second MEMS elements (3B, 9B) are different due to the area of the movable part 340B, in the process of forming a plurality of groove parts (31B, 32B) of the plurality of MEMS elements, the plurality of MEMS elements (for example, the first MEMS element 3B and the second MEMS element 9B) can be easily formed by reducing the number of the groove parts 32B.

[0115] An example of the operation of the third MEMS module A3 can refer to the description of the operation of the above-mentioned MEMS module A1.

[0116] (Fourth Embodiment) The MEMS module A4 according to the fourth embodiment will be described.

[0117] FIG. 24 is an example of a cross-sectional view taken along line A-A showing the MEMS module A4 according to the fourth embodiment. FIG. 25 is an example of a cross-sectional view of the first and second MEMS elements (3C, 9C) and the electronic component 2C in FIG. 24.

[0118] The difference between the MEMS module A4 according to the fourth embodiment and the MEMS modules A1 to A3 according to the first to third embodiments is that, as shown in FIG. 24, a substrate 30C including the first and second MEMS elements (3C, 9C) and the electronic component 2C forms the same chip component ChipB. Note that the plurality of MEMS elements may be three or more. In the following description, the same chip component in which the first and second MEMS elements (3C, 9C) and the electronic component 2C are formed on the substrate 30C is referred to as the chip component ChipB.

[0119] In the fourth embodiment, the points common to the first to third embodiments (for example, the substrate 1, the plurality of wirings 4, the cover 6, and the bonding material 7) are incorporated from the first to third embodiments, and the different points will be described below.

[0120] The chip component ChipB is mounted on the mounting surface 1a of the substrate 1. The chip component and the substrate 1 may be physically bonded by a silicone resin, a die attach film, etc. not shown. A plurality of electrode pads (24, 34, 94) are provided on the surface of the chip component in the z1 direction.

[0121] The substrates 30C constituting the first and second MEMS elements (3C, 9C) and the electronic component 2C include a movable part 340C, a hollow part 360C, and a fixed part 370C as shown in FIG. 25, similar to the first to third embodiments. Also, the first and second MEMS elements (3C, 9C) and the electronic component 2C are provided with a protective film 10A on the surface in the z1 direction of the chip component. Further, the second MEMS element 9C and the electronic component 2C are provided with a protective film 10B on the surface in the z1 direction of the protective film 10A. The movable part 340C includes an upper layer part 355C, a film forming part 350C, and protective films (10A, 10B). Note that the first and second MEMS elements (3C, 9C) and the electronic component 2C may not have the protective film 10A.

[0122] The second MEMS element 9C is formed with a thicker film thickness T6 of the movable part 340C of the second MEMS element 9C than the film thickness T5 of the movable part 340C of the first MEMS element 3C by laminating the protective film 10B on the first MEMS element 3C.

[0123] Next, a method for manufacturing the MEMS module A4 will be described. In the following description, a method for manufacturing the first and second MEMS elements (3C, 9C) and the electronic component 2C will be described.

[0124] First, a substrate 30C (not shown) having a semiconductor layer is prepared. Examples of the semiconductor layer include a silicon layer. The thickness of the substrate 30C is, for example, about 700 to 800 μm.

[0125] Next, as shown in FIG. 26, a plurality of groove portions 31C are formed in the substrate 30C. The plurality of groove portions 31C can be formed, for example, by deep etching such as the Bosch method.

[0126] Next, as shown in FIG. 27, the substrate 30C is etched in a direction perpendicular to the depth direction of the groove from the bottom surface of the groove portion 31C to form a hollow portion 360C that connects adjacent groove portions.

[0127] Next, as shown in FIG. 28, heat treatment (for example, 1100°C to 1200°C) is performed on the substrate 30C in an atmosphere containing hydrogen to form an upper layer portion 355C that is a part of the movable portion 340C.

[0128] Next, as shown in FIG. 25, a film forming portion 350C is formed on the main surface of the substrate 30C facing the z1 direction. The film forming portion 350C can use, for example, a silicon layer deposited by the CVD method. That is, by depositing a semiconductor layer, the semiconductor layers of the first and second MEMS elements (3C, 9C) are thickened. In the present embodiment, the film thicknesses of the film forming portions 350C of the first and second MEMS elements (3C, 9C) are the same. That is, as shown in FIG. 23, the combined film thickness T1 of the upper layer portion 355C and the film forming portion 350C of the first and second MEMS elements (3C, 9C) is the same. Note that the film thickness of the film forming portion 350C of the second MEMS element 9C may be made thicker than that of the film forming portion 350C of the first MEMS element 3C.

[0129] Further, as shown in FIG. 25, an electronic component 2C is formed inside the substrate 30C in a region separated from the region where the first and second MEMS elements (3C, 9C) are formed in a direction (y direction) perpendicular to the thickness direction of the movable part 340C. Further, a protective film (10A, 10B), which is a part of the movable part 340C, is formed with respect to the thickness direction of the film forming part 350C. Therefore, the film thickness T6 of the movable part 340C of the second MEMS element 9C is thicker than the film thickness T5 of the movable part 340C of the first MEMS element 3C. Thereby, since the first and second MEMS elements (3C, 9C) have different film thicknesses which are the shapes of the movable part 340C, they can accurately detect the air pressures in different pressure ranges respectively.

[0130] Through the above steps, the first and second MEMS elements (3C, 9C), and the electronic component 2C can be manufactured. Also, after manufacturing, the substrate 30C including the first and second MEMS elements (3C, 9C), and the electronic component 2C can be made into the same chip component ChipB.

[0131] Next, as shown in FIG. 24, the same chip component ChipB including the first and second MEMS elements (3C, 9C), and the electronic component 2C is mounted on the substrate 1. Further, a wiring 4 is formed to connect the electrode pad 11 of the substrate 1, the electrode pad 24 of the electronic component 2C, the electrode pad 34 of the first MEMS element 3C, and the electrode pad 94 of the second MEMS element 9C, and finally the cover 6 and the substrate 1 are joined by a joining material 7.

[0132] Through the above processes, the MEMS module A4 can be manufactured. The MEMS module A4 includes a plurality of different MEMS elements (e.g., the first MEMS element 3C and the second MEMS element 9C) with the thickness of the movable part 340C of the MEMS element increased in one chip component, and an electronic component 2C. By increasing the thickness of the movable part 340C, high air pressure can be detected, and the air pressure in different pressure ranges can be accurately detected without degrading the accuracy of the air pressure in the low air pressure region. Furthermore, since the structures of the first and second MEMS elements (3C, 9C) are different due to the thickness of the movable part 340C, in the process of forming the protective films of the plurality of MEMS elements, the plurality of MEMS elements (e.g., the first MEMS element 3C and the second MEMS element 9C) can be easily formed by forming the protective films with different thicknesses.

[0133] An example of the operation of the fourth MEMS module A4 can refer to the description of the operation of the above-mentioned MEMS module A1.

[0134] (Fifth Embodiment) The MEMS module A5 according to the fifth embodiment will be described.

[0135] FIG. 29 is an example of a cross-sectional view showing the first and second MEMS elements (3D, 9D) and the electronic component 2D in the MEMS module A5.

[0136] The difference between the MEMS module A5 according to the fifth embodiment and the MEMS module A4 according to the fourth embodiment is that, as shown in FIG. 29, the hollow portion 361D of the second MEMS element 9D is narrower in the y direction than the hollow portion 360D of the first MEMS element 3D. Similarly, although not shown, it is also narrower in the x direction. Further, the hollow portion 361D of the second MEMS element 9D has a smaller area when viewed from the z direction than the hollow portion 360D of the first MEMS element 3D, although not shown. That is, the movable portion 340D of the second MEMS element 9D has a smaller area than the movable portion 340D of the first MEMS element 3D. The movable portion 340D of the second MEMS element 9D can detect high pressure due to the smaller area of the movable portion 340D of the first MEMS element 3D. Note that the plurality of MEMS elements may be three or more.

[0137] In the fifth embodiment, the points common to the fourth embodiment (for example, the substrate 1, the plurality of wirings 4, the cover 6, and the bonding material 7) are incorporated from the fourth embodiment, and the differences will be described below.

[0138] The substrate 30D including the first and second MEMS elements (3D, 9D) and the electronic component 2D is included in the same chip component ChipB, for example, in the same manner as in the fourth embodiment.

[0139] As shown in FIG. 29, the first and second MEMS elements (3D, 9D) include a movable portion 340D, a hollow portion (360D, 361D), and a fixed portion 370D, in the same manner as in the fourth embodiment. The movable portion 340D includes an upper layer portion 355D, a film forming portion 350D, and protective films (10A, 10B).

[0140] Next, a manufacturing method of the MEMS module A5 will be described. In the following description, manufacturing methods of the first and second MEMS elements (3D, 9D) and the electronic component 2D will be described.

[0141] First, a substrate 30D (not shown) having a semiconductor layer is prepared. Examples of the semiconductor layer include a silicon layer. The thickness of the substrate 30D is, for example, about 700 to 800 μm.

[0142] Next, as shown in FIG. 30, a plurality of groove portions (31D, 32D) are formed in the substrate 30D. The plurality of groove portions (31D, 32D) can be formed, for example, by deep etching such as the Bosch method. The number of the plurality of groove portions 32D constituting the second MEMS element 9D is, for example, made smaller than the number of the plurality of groove portions 31D constituting the first MEMS element 3D. Note that the number of the grooves is for changing the area of the hollow portions of the plurality of MEMS elements, and is not limited to being made smaller.

[0143] Next, as shown in FIG. 31, the substrate 30D is etched in a direction perpendicular to the depth direction of the groove portions from the bottom surfaces of the groove portions 31D and 32D to form hollow portions (360D, 361D) that connect adjacent groove portions.

[0144] Next, as shown in FIG. 32, a heat treatment (for example, 1100° C. to 1200° C.) is performed on the substrate 30D in an atmosphere containing hydrogen to form an upper layer portion 355D that is a part of the movable portion 340D.

[0145] Next, as shown in FIG. 29, a film forming portion 350D is formed on the main surface of the substrate 30D facing the z1 direction. The film forming portion 350D can use, for example, a silicon layer deposited by a CVD method. That is, by depositing a semiconductor layer, the semiconductor layers of the first and second MEMS elements (3D, 9D) are thickened.

[0146] Furthermore, as shown in FIG. 29, an electronic component 2D is formed inside the substrate 30D in a region separated from the regions where the first and second MEMS elements (3D, 9D) are formed in a direction (y direction) perpendicular to the thickness direction of the movable portion 340D. Also, a protective film 10A that is a part of the movable portion 340D is formed with respect to the thickness direction of the film forming portion 350D. Further, in the second MEMS element 9D and the electronic component 2D, a protective film 10B that is a part of the movable portion 340D is formed with respect to the thickness direction of the protective film 10A. Note that the first and second MEMS elements (3D, 9D) may not have the protective films (10A, 10B).

[0147] In this embodiment, the film thicknesses of the film formation parts 350D of the first and second MEMS elements (3D, 9D) are the same. That is, the combined film thickness T1 of the upper layer part 355B and the film formation part 350D of the first and second MEMS elements (3D, 9D) is the same. Therefore, the hollow part 361D of the second MEMS element 9D becomes narrower than the hollow part 360D of the first MEMS element 3D, and the area becomes smaller. As a result, since the areas of the first and second MEMS elements (3D, 9D), which are the shapes of the movable parts 340D of the first and second MEMS elements (3D, 9D), are different, different pressure ranges can be accurately detected respectively. Note that the film formation part 350D of the second MEMS element 9D may be the same as the film thickness of the film formation part 350D of the first MEMS element 3D, or may be thicker than the film thickness of the film formation part 350D of the first MEMS element 3D.

[0148] By the above steps, the first and second MEMS elements (3D, 9D) and the electronic component 2D can be manufactured. Also, after manufacturing, the substrate 30D including the first and second MEMS elements (3D, 9D) and the electronic component 2D can be made into the same chip component ChipB.

[0149] Next, the same chip component ChipB including the first and second MEMS elements (3D, 9D) and the electronic component 2D is mounted on the substrate 1. Further, wiring 4 is formed to conduct the electrode pad 11 of the substrate 1, the electrode pad 24 of the electronic component 2D, the electrode pad 34 of the first MEMS element 3D, and the electrode pad 94 of the second MEMS element 9D. Finally, the cover 6 and the substrate 1 are joined by a joining material 7.

[0150] Through the above processes, the MEMS module A5 can be manufactured. The MEMS module A5 includes a plurality of different MEMS elements (for example, the first MEMS element 3D and the second MEMS element 9D) in which the area of the movable part 340D of the MEMS element is reduced in one chip component. By reducing the area of the movable part 340D, high air pressure can be detected, and air pressure in different pressure ranges can be detected without degrading the accuracy of the air pressure in the low air pressure region. Further, since the difference in structure is due to the area of the movable part 340D, in the process of forming a plurality of groove parts (31D, 32D) of the plurality of MEMS elements, a plurality of MEMS elements (for example, the first MEMS element 3D and the second MEMS element 9D) can be easily formed by reducing the number of groove parts 32D.

[0151] An example of the operation of the fifth MEMS module A5 can refer to the description of the operation of the above-mentioned MEMS module A1.

[0152] (Other Embodiments) As described above, although one embodiment has been described, the discussions and drawings forming part of the disclosure are exemplary and should not be construed as limiting. Various alternative embodiments, examples, and operation techniques will be apparent to those skilled in the art from this disclosure. Thus, this embodiment includes various embodiments and the like not described herein.

Description of Reference Numerals

[0153] 1, 30, 30A, 30B, 30C, 30D Substrate 2, 2C, 2D Electronic Component 3, 3A, 3B, 3C, 3D First MEMS Element 9, 9A, 9B, 9C, 9D Second MEMS Element 4 Wiring 6 Cover 7 Bonding Material 10A, 10B Protective Film 31, 31A, 31B, 31C, 31D, 32, 32B, 32D Groove 61 Opening 62 Extension 100 Mounted face 320 Gauge resistance 340, 340A, 340B, 340C, 340D Moving parts 350, 350A, 350B, 350C, 350D, 351 Film forming part 355, 355A, 355B, 355C, 355D Upper layer part 360, 360A, 360B, 360C, 360D, 361B, 361D Hollow part 370, 370A, 370B, 370C, 370D Fixed part A1, A2, A3, A4, A5 MEMS module Chip1, Chip2 Chip components ChipA Chip component for electronic components

Claims

1. A first MEMS element having a first hollow portion with a sealed periphery formed inside a substrate and a first movable portion which is a part of the substrate disposed adjacent to the first hollow portion inside the substrate, wherein the first movable portion deflects in shape according to a pressure difference between the pressure inside the first hollow portion and the external pressure, a second MEMS element having a second hollow portion with a sealed periphery formed inside the substrate and a second movable portion which is a part of the substrate disposed adjacent to the second hollow portion inside the substrate, wherein the second movable portion deflects in shape according to a pressure difference between the pressure inside the second hollow portion and the external pressure, an electronic component that calculates a change in the external pressure of the substrate using the deflection amount of at least one of the first movable portion and the second movable portion, comprising, an MEMS module in which the first movable portion and the second movable portion have different deflection amounts according to the external pressure.

2. The first MEMS element and the second MEMS element are included in different chip components and are spaced apart from each other, The MEMS module according to claim 1.

3. The first MEMS element and the second MEMS element are included in the same chip component, The MEMS module according to claim 1.

4. The film thickness of the second movable portion in contact with the second hollow portion of the second MEMS element is thicker than the film thickness of the first movable portion in contact with the first hollow portion of the first MEMS element, The MEMS module according to any one of claims 1 to 3.

5. The first movable portion includes a first upper layer portion in contact with the first hollow portion in the thickness direction of the substrate and a first film forming portion laminated on the first upper layer portion, The second movable portion includes a second upper layer portion in contact with the second hollow portion in the thickness direction of the substrate and a second film forming portion laminated on the second upper layer portion, The MEMS module according to claim 4.

6. The first movable portion of the first MEMS element further has a first protective film laminated on the first film forming portion, The second movable portion of the second MEMS element further has a second protective film laminated on the second film forming portion, The materials of the first protective film and the second protective film are at least one of silicon oxide or silicon nitride, The MEMS module according to claim 5.

7. When viewed from the thickness direction of the substrate, The area of the second movable part in contact with the second hollow part of the second MEMS element is smaller than the area of the first movable part in contact with the first hollow part of the first MEMS element, The MEMS module according to any one of claims 1 to 6.

8. The electronic component is included in a chip component for electronic components different from the first MEMS element and the second MEMS element, and the first MEMS element and the second MEMS element are arranged on the chip component for electronic components. The MEMS module according to any one of claims 1 to 7.

9. The electronic component is included in the same chip component as the first MEMS element and the second MEMS element. The MEMS module according to any one of claims 1 to 7.

10. Form a plurality of groove portions in the semiconductor layer included in the substrate, etch the semiconductor layer in a direction perpendicular to the depth direction of the groove portion from the bottom surface of the groove portion to connect the plurality of groove portions, perform a heat treatment on the semiconductor layer, and a part of the semiconductor layer melted by the heat treatment closes both ends in the depth direction of the groove portion to form the first hollow portion and the second hollow portion, form a first upper layer portion which is a part of the first movable part in contact with the first hollow part when viewed from the thickness direction of the substrate, form a second upper layer portion which is a part of the second movable part in contact with the second hollow part when viewed from the thickness direction of the substrate, form a first film-forming portion which is a part of the first movable part laminated on the first upper layer portion in the thickness direction of the substrate to form the first MEMS element, form a second film-forming portion which is a part of the second movable part laminated on the second upper layer portion in the thickness direction of the substrate to form the second MEMS element, A method for manufacturing the MEMS module according to claim 1, wherein an electronic component into which output signals of the first MEMS element and the second MEMS element are input is formed on the substrate.

11. The second MEMS element is formed on the substrate together with the first MEMS element and configured as different chip components after dicing. The method for manufacturing the MEMS module according to claim 10.

12. The second MEMS element is formed on the substrate together with the first MEMS element and configured as the same chip component. The method for manufacturing the MEMS module according to claim 10.

13. The formation of the first movable part and the second movable part is such that the film thickness of the second movable part in contact with the second hollow part of the second MEMS element is formed to be thicker than the film thickness of the first movable part in contact with the first hollow part of the first MEMS element. The method for manufacturing a MEMS module according to any one of claims 10 to 12.

14. The first movable part includes a first upper layer part in contact with the first hollow part in the thickness direction of the substrate and a first film forming part laminated on the first upper layer part. The second movable part includes a second upper layer part in contact with the second hollow part in the thickness direction of the substrate and a second film forming part laminated on the second upper layer part. The method for manufacturing a MEMS module according to claim 13.

15. The first movable part of the first MEMS element further forms a first protective film laminated on the first film forming part in the thickness direction of the substrate. The second movable part of the second MEMS element further forms a second protective film laminated on the second film forming part in the thickness direction of the substrate. The method for manufacturing a MEMS module according to claim 14.

16. In the step of forming a plurality of the groove parts, by forming a smaller number of the plurality of groove parts, when viewed from the thickness direction of the substrate, the area of the second movable part in contact with the second hollow part of the second MEMS element is formed to be smaller than the area of the first movable part in contact with the first hollow part of the first MEMS element. The method for manufacturing a MEMS module according to any one of claims 10 to 15.

17. The electronic component is formed on the substrate and diced after formation to form a chip component for the electronic component. The method for manufacturing a MEMS module according to any one of claims 10 to 16.

18. The electronic component is formed on the substrate separated from the first MEMS element and the second MEMS element. The method for manufacturing a MEMS module according to any one of claims 10 to 16.

Images