An RF tuning system comprising a tuning circuit having an impedance for setting and adjusting parameters of electrodes in an electrostatic chuck

Abstract

SOLUTION: A substrate processing system for processing a substrate within a processing chamber is provided and includes a power source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate, and includes first and second electrodes which receive power from a power source via the power source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the power source terminal. The second impedance set is connected between output of the power source and a reference terminal and receives the first signal from the power source via the power source terminal.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims priority based on U.S. Patent Application No. 16 / 052,877, filed on August 2, 2018. The entire disclosure of the above application is incorporated herein by reference.

[0002] The present disclosure relates to an electric holding device using electrostatic attraction, and particularly to a tuning circuit for a clamp electrode and a radio frequency (RF) electrode of the electric holding device.

Background Art

[0003] The description of the background art provided herein is for the purpose of schematically presenting the background of the present disclosure. The achievements of the inventors named herein, in the scope described in this background art, cannot be regarded as prior art to the present disclosure either explicitly or implicitly, including aspects of the description that cannot be commonly regarded as prior art at the time of filing.

[0004] A substrate processing system can be utilized to perform etching, deposition, and / or other processes on a substrate such as a semiconductor wafer. Examples of processes that can be performed on the substrate include, but are not limited to, plasma enhanced chemical vapor deposition (PECVD) processes, physical vapor deposition (PVD) processes, ion implantation processes, and / or other etching, deposition, and cleaning processes. As an example, during an etching process, the substrate may be placed on an electrostatic chuck (ESC) within the substrate processing system, and a thin film on the substrate is etched.

Summary of the Invention

[0005] A substrate processing system for processing a substrate within a processing chamber is provided. The substrate processing system includes a power terminal, a substrate support, and a tuning circuit. The substrate support is configured to hold a substrate. The substrate support includes electrodes. The electrodes include a first electrode and a second electrode. The first electrode and the second electrode receive power from a first power source via the power terminal. A first tuning circuit is connected to at least one of the first electrode and the second electrode. The first tuning circuit is assigned to adjust one or more signals supplied to the first electrode. The first tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is connected in series between the first electrode and the first power source. The first impedance set receives a first signal from the first power source via the power terminal. The one or more signals include the first signal. The second impedance set is connected between an output of the first power source and a reference terminal. The second impedance set receives the first signal from the first power source via the power terminal.

[0006] In another feature, the first tuning circuit includes the first impedance set and the second impedance set. In another feature, the substrate processing system further includes a system controller configured to adjust the impedance value of the first impedance set and the impedance value of the second impedance set.

[0007] In another feature, the first tuning circuit adjusts the voltage, current level, phase, power level, and / or frequency of one or more signals supplied to the first electrode. In another feature, the first tuning circuit includes the first impedance set and the second impedance set. The second impedance set is connected between the first impedance set and the reference terminal.

[0008] In another feature, the first power source includes a matching circuit network. The matching circuit network is connected between the first power source and the power terminal. The first tuning circuit is connected between the power terminal and the first electrode.

[0009] In another feature, the first tuning circuit is not included in the matching circuit network. In another feature, no matching circuit network is connected between the first power supply and the first tuning circuit.

[0010] In another feature, the substrate processing system further comprises a second tuning circuit. The first tuning circuit is configured to adjust the voltage, current level, phase, power level, or frequency of a first signal supplied from the first power supply to the first electrode. The second tuning circuit is configured to adjust the voltage, current level, phase, power level, or frequency of the first signal supplied from the first power supply to the second electrode. The one or more signals include the first signal.

[0011] In another feature, the substrate processing system further comprises a second power supply and a second tuning circuit. The first tuning circuit is configured to adjust the voltage, current level, phase, power level, or frequency of a first signal supplied from the first power supply to the first electrode. The second tuning circuit is configured to adjust the voltage, current level, phase, power level, or frequency of a second signal supplied from the second power supply to the second electrode. The one or more signals include the first signal and the second signal.

[0012] In another feature, the electrodes of the substrate support are concentrically arranged.

[0013] In another feature, the substrate processing system further includes a second tuning circuit and a third tuning circuit. The electrodes include a third electrode. The first tuning circuit is connected to the first electrode and is configured to modulate a first signal before being received by the first electrode. The second tuning circuit is connected to the second electrode and is configured to modulate the first signal or a second signal before being received by the second electrode. The third tuning circuit is connected to the third electrode and is configured to modulate the first signal or a third signal before being received by the third electrode. In another feature, the first electrode, the second electrode, and the third electrode are concentrically arranged.

[0014] In another feature, the substrate support is an electrostatic chuck. The first electrode and the second electrode are clamp electrodes and are configured to receive a clamp voltage to clamp the substrate to the substrate support. The third electrode is a bias electrode and is configured to receive a bias voltage. The third signal is received from a third power source by the third tuning circuit.

[0015] In another feature, the substrate support is an electrostatic chuck. The first electrode is a clamp electrode. The second electrode and the third electrode are bias electrodes. The second signal is received from a second power source by the second tuning circuit.

[0016] In another feature, the substrate support is an electrostatic chuck. The first electrode is a clamp electrode. The second electrode is a clamp electrode. The electrodes include an electrode ring. The first tuning circuit includes a first impedance set, a third impedance set, and a fourth impedance set. The first impedance set includes a first inductor and a first capacitor connected between the first clamp electrode and a first power source. The third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power source. The fourth impedance set includes a third inductor and a third capacitor connected between the second clamp electrode and the first power source.

[0017] In another feature, the substrate support is an electrostatic chuck. The first electrode is a clamp electrode. The second electrode is a clamp electrode. The electrode includes an electrode ring. The first tuning circuit includes a second impedance set, a third impedance set, and a fourth impedance set. The second impedance set includes a first inductor and a first capacitor connected in parallel between a first electrode terminal and a reference terminal. The first electrode terminal is connected between the first clamp electrode and the first power supply. The third impedance set includes a second inductor and a second capacitor connected in parallel between a second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the first power supply. The fourth impedance set includes a third inductor and a third capacitor connected in parallel between a third electrode terminal and the reference terminal. The third electrode terminal is connected between the second clamp electrode and the first power supply.

[0018] In another feature, the substrate support is an electrostatic chuck. The first electrode is a clamp electrode. The second electrode is a clamp electrode. The electrodes include an electrode ring. The first tuning circuit includes a first impedance set, a second impedance set, a third impedance set, a fourth impedance set, a fifth impedance set, and a sixth impedance set. The first impedance set includes a first inductor and a first capacitor connected between the first clamp electrode and the first power supply. The third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power supply. The fourth impedance set includes a third inductor and a third capacitor connected between the second clamp electrode and the first power supply. The second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and the reference terminal. The first electrode terminal is connected between the first clamp electrode and the first power supply. The fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the first power supply. The sixth impedance set includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and the reference terminal. The third electrode terminal is connected between the second clamp electrode and the first power supply.

[0019] In another feature, the substrate processing system further includes a second power supply connected to the first terminal, the second terminal, and the third terminal.

[0020] In another feature, the substrate processing system further includes a second tuning circuit. The substrate support is an electrostatic chuck. The first electrode is a first clamp electrode. The second electrode is a second clamp electrode. The electrodes include an electrode ring. The first tuning circuit includes a first impedance set, a third impedance set, and a fourth impedance set. The second tuning circuit includes a second impedance set, a fifth impedance set, and a sixth impedance set. The first impedance set includes a first inductor and a first capacitor connected between the first clamp electrode and the first power supply. The third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the second power supply. The fourth impedance set includes a third inductor and a third capacitor connected between the second clamp electrode and the first power supply. The second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and the reference terminal. The first electrode terminal is connected between the first clamp electrode and the first power supply. The fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the second power supply. The sixth impedance set includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and the reference terminal. The third electrode terminal is connected between the second clamp electrode and the first power supply.

[0021] In another feature, a matching circuit network is not connected between the power supply terminal and the electrode. In another feature, the power from the first power supply is divided to supply a part of the power to each of the electrodes. In another feature, the first impedance set and the second impedance set include variable inductances.

[0022] In another feature, the substrate processing system further includes a processing chamber, a first power supply, and a controller. The controller is configured to adjust the impedances of the first impedance set and the second impedance set.

[0023] In another aspect, a substrate processing system for processing a substrate within a processing chamber is provided. The substrate processing system includes a substrate support, a first impedance, and a second impedance. The substrate support is configured to hold a substrate, and the substrate support includes an electrode. The electrode includes a first electrode, a second electrode, and a third electrode. The first impedance is connected between the first electrode and the third electrode. The second impedance is connected between the second electrode and the third electrode. The first impedance is connected (i) between the first electrode and the second impedance and (ii) between the first power supply and the second impedance. The second impedance is connected (i) between the second electrode and the first impedance and (ii) between the second power supply and the first impedance. The first impedance and the second impedance are assigned to adjust (i) a first signal supplied from the first power supply to the first electrode and (ii) a second signal supplied from the second power supply to the second electrode.

[0024] In another aspect, the first impedance is connected in series with the second impedance. In another aspect, the first impedance is connected between the first electrode and a third power supply. The second impedance is connected between the second electrode and the third power supply. In another aspect, the third power supply is connected to the third electrode.

[0025] In another feature, the substrate processing system further includes a third impedance and a fourth impedance. The third impedance is connected between (i) the first electrode and the third electrode, (ii) the first electrode and the fourth impedance, and (iii) the first power supply and the fourth impedance. The fourth impedance is connected between (i) the second electrode and the third electrode, (ii) the second electrode and the third impedance, and (iii) the second power supply and the third impedance. The third impedance and the fourth impedance are assigned to adjust (i) a first signal supplied to the first electrode by the first power supply and (ii) a second signal supplied to the second electrode by the second power supply.

[0026] In another feature, the first impedance and the third impedance are connected in parallel between the first electrode and the third power supply. The second impedance and the fourth impedance are connected in parallel between the second electrode and the third power supply. In another feature, the third power supply is connected to the third electrode. In another feature, the first impedance set and the second impedance set include variable inductors.

[0027] In another feature, the substrate processing system further includes a processing chamber, a first power supply, and a controller. The controller is configured to adjust the impedance of the first impedance set and the second impedance set.

[0028] In another aspect, a method of operating a substrate processing system is provided. The method includes selecting a process, determining a recipe including system operation parameters for the selected process, controlling an actuator to set the system operation parameters, and setting an impedance value of a first tuning circuit based on the selected process and the system operation parameters. The first tuning circuit is connected to a first electrode within a substrate support. The first tuning circuit is assigned to adjust a signal supplied to the first electrode. The first tuning circuit is a first impedance set serially connected between the first electrode and a first power supply, the first impedance set receiving a first signal from the first power supply, the one or more signals including the first signal, or a second impedance set connected between an output of the first power supply and a reference terminal, the method including at least one of the first impedance set and the second impedance set receiving the first signal from the first power supply. The second impedance set receives the first signal from the first power supply. The method further includes placing a substrate on a substrate support within a processing chamber and performing a processing operation for the selected process including powering an electrode within the substrate support from the first power supply. The electrodes include the first electrode and a second electrode. The first electrode and the second electrode receive power from the first power supply via a power terminal.

[0029] In another aspect, the method further includes adjusting the impedance value of the first tuning circuit during performance of the processing operation. In another aspect, the method further includes collecting sensor output data during performance of the processing operation, determining one or more parameters based on the sensor output data, and adjusting the impedance value of the first tuning circuit based on the one or more parameters.

[0030] In another aspect, the method further includes determining a characteristic or property of the processing chamber and setting the impedance value of the first tuning circuit based on the characteristic or property.

[0031] In another aspect, the method further comprises determining a feature or characteristic of the substrate support and setting an impedance value of the first tuning circuit based on the feature or characteristic.

[0032] In another aspect, the method further comprises adjusting the impedance of at least one of the first impedance set or the second impedance set based on a change in the characteristic to conform to respective trajectories. In another aspect, the method further comprises calculating or determining a trajectory based on at least one of a feature, characteristic, substrate, substrate support, or one or more other features of the processing chamber, and one or more other characteristics of the substrate, substrate support, or processing chamber.

[0033] In another aspect, the method further comprises determining a feature or characteristic of the substrate and setting an impedance value of the first tuning circuit based on the feature or characteristic.

[0034] In another aspect, the method further comprises supplying a clamping voltage to the first electrode by a first power source to clamp the substrate to the substrate support, supplying a bias voltage to the second electrode, and adjusting the clamping voltage and the bias voltage by the first tuning circuit or the second tuning circuit. The substrate support is an electrostatic chuck. In another aspect, the first tuning circuit comprises a first impedance and a second impedance.

[0035] In another aspect, the method further comprises adjusting the value of the impedance of the first tuning circuit to adjust the clamping voltage supplied to the first electrode and adjusting the value of the impedance of the second tuning circuit to adjust the bias voltage supplied to the second electrode. The substrate support is an electrostatic chuck. In another aspect, the method further comprises adjusting the potential difference of the plasma at respective pairs of points above and along the surface of the substrate support by adjusting the impedance value of the first tuning circuit.

[0036] In another feature, the method further comprises a step of adjusting an impedance value in the bias high-frequency matching circuit network based on the impedance value of the first tuning circuit. The bias high-frequency matching circuit network is connected between a power supply and the first tuning circuit.

[0037] In another feature, a substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes a power supply terminal, a substrate support, a first tuning circuit, and a second tuning circuit. The substrate support is configured to hold the substrate. The substrate support includes electrodes. The electrodes include a first electrode and a second electrode. The first tuning circuit is connected to the first electrode and is assigned to adjust the impedance of the first electrode. The first tuning circuit includes a first impedance set connected between the first electrode and ground. The second tuning circuit is connected to the second electrode and is assigned to adjust the impedance of the second electrode. The second tuning circuit includes a second impedance set connected between the second electrode and ground.

[0038] In another feature, the first tuning circuit is connected in series between the first electrode and ground. In another feature, the first tuning circuit includes an inductor and a capacitor. In another feature, the second tuning circuit is connected in series between the second electrode and ground. In another feature, the second tuning circuit includes an inductor and a capacitor. In another feature, the first tuning circuit is connected between the first electrode and the second electrode. The first electrode and the second electrode are connected to ground.

[0039] In another feature, the substrate processing system further includes a third electrode connected to ground and a third tuning circuit connected between the second electrode and the third electrode. In another feature, the first tuning circuit includes a first inductor and a first capacitor. The second tuning circuit includes a second inductor and a second capacitor.

[0040] In another aspect, the first tuning circuit and the second tuning circuit comprise variable inductance. In another aspect, the substrate processing system further comprises a processing chamber and a controller configured to adjust the impedance of the first impedance set and the second impedance set.

[0041] Additional areas in which the present disclosure is applicable will become apparent from the detailed description, the claims, and the drawings. The detailed description and the specific examples are for illustrative purposes only and do not limit the scope of the present disclosure.

Brief Description of the Drawings

[0042] The present disclosure can be more fully understood from the detailed description and the accompanying drawings described below.

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Figure 1

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[0056] In the drawings, the same reference numerals may be used to identify similar and / or identical elements.

DETAILED DESCRIPTION OF THE INVENTION

[0057] In a capacitively coupled plasma (CCP) system, an RF voltage signal can be supplied to a showerhead and / or a substrate support (e.g., an electrostatic chuck or a pedestal) within a processing chamber to generate and maintain a plasma supplied for substrate processing (e.g., a plasma supplied during etching or deposition processes). As an example, the substrate support can include a plurality of electrodes for receiving an RF voltage. The electrodes each have a respective geometry, and thus can have different sizes and shapes and can be disposed at different positions within the substrate support.

[0058] The examples described herein include a tuning circuit for controlling an RF voltage supplied to an electrode of a substrate support. The tuning circuit comprises a variable impedance and / or a fixed impedance that can be adjusted for the substrate processing being performed. The RF voltage and corresponding current supplied to the electrode can be controlled to vary the mode of the generated plasma. During processing, a substrate is disposed on the substrate support, and one or more layers (e.g., film layers) of the substrate can be, for example, etched or deposited. By adjusting the RF voltages supplied to different electrodes, the parameters of the one or more layers can be spatially changed and / or adjusted across the wafer according to the position of the electrodes. By way of example, the parameters of the one or more layers can include values of uniformity, stress values, refractive index, etching rate, deposition rate, thickness values, and / or other characteristic values that are measured quantities.

[0059] RF power is disclosed as being supplied from one or more RF power sources. In one embodiment, the RF power is supplied by feeding common node RF power from a single RF power source. The RF power is then supplied from the common node to different electrodes of the substrate support via respective paths. The paths comprise tuning circuits and / or impedances that vary the corresponding RF voltage, current level, phase, and / or frequency components. The impedance may include series-connected or shunt-connected impedances. Other embodiments with multiple power sources, multiple nodes, and various paths are disclosed herein.

[0060] The RF voltage and current levels supplied to the electrodes within the substrate support may be changed by adjusting the size, shape, and pattern of the electrodes. For example, the RF voltage and current amounts supplied to the plasma from annular and / or circular electrodes, the substrate processing performed using the annular and / or circular electrodes, and / or the resulting substrate characteristics can be changed and / or adjusted by varying the radius of the electrodes.

[0061] A substrate processing system may have multiple features, characteristics, and / or parameters that provide degrees of freedom and can be set and / or adjusted to control the resulting aspect of a layer of a substrate during substrate processing. For example, RF power level, chamber shape, use of a focus ring, hole pattern of a showerhead, showerhead shape, electrode pattern, gas pressure, gas composition, etc. may be set and / or controlled to provide a substrate having a resulting composition and profile of a target layer.

[0062] The disclosed examples provide another degree of freedom for adjusting the profile of one or more layers of a substrate. That degree of freedom is provided by setting and / or adjusting the impedance of a tuning circuit (e.g., selection, change, and / or control of capacitance, inductance, reactance, resistance, layout, etc.). The profile refers to the above-described parameters of one or more layers.

[0063] The radial profile of a substrate may be changed, for example, by changing a metal or dielectric annular element near the periphery of the substrate. This may include adjusting parameters such as gas pressure, gas flow rate, gas composition, RF discharge output, frequency of the RF signal supplied to the electrode of the substrate support, and / or other parameters. Changing these parameters at a specific position to provide a feature of the target layer (e.g., thickness or shape of a specific layer at the periphery) may change other parameters and / or affect other features at the same position and / or other positions. Therefore, these parameters do not independently adjust a specific feature. In another example, the periphery of the substrate may be changed by using a focus ring disposed outside the periphery of the substrate. However, the use of the focus ring may affect the gas flow rate at the center of the substrate, and thus affect the processing and results at the center of the substrate. Examples of other layer features are a specific trench depth or width, distance between trenches, distance between conductive elements, layer composition, etc.

[0064] The greater the number of parameters and degrees of freedom in setting and controlling the profile adjustment of one or more layers of a substrate, the higher the likelihood of being able to provide a specific feature without adversely affecting other features. Also, as the number of parameters and degrees of freedom increases, the number, composition, and layout (or pattern) of features that can be formed increase. The examples disclosed herein enhance the flexibility of substrate layer design and the design selectivity inherent in the position, enabling the substrate processing system to provide a variety of features.

[0065] FIG. 1 shows a substrate processing system 100 incorporating an ESC 101. The ESC 101 may be configured the same as or similar to any of the ESCs disclosed herein. FIG. 1 shows a capacitively coupled plasma (CCP) system, but the embodiments disclosed herein are applicable to transformer coupled plasma (TCP) systems with a substrate support, electron cyclotron resonance (ECR) plasma systems, inductively coupled plasma (ICP) systems, and / or other systems and plasma sources. The embodiments are applicable to physical vapor deposition (PVD) processes, plasma enhanced chemical vapor deposition (PECVD) processes, chemically enhanced plasma vapor deposition (CEPVD) processes, ion implantation processes, plasma etching processes, and / or other etching, deposition, and cleaning processes.

[0066] The ESC 101 may include an upper plate 102 and a base plate 103. The ESC 101 is shown having two plates, but the ESC may include a single plate. The plates 102, 103 may be formed of ceramic and / or other materials. Although the ESCs in FIGS. 1 - 5 and FIGS. 7 - 11 are each shown with specific features and without other features, each of the ESCs may be modified to include any of the features disclosed herein as well as in FIGS. 1 - 5 and FIGS. 7 - 11.

[0067] Although the ESC 101 is shown as being attached to the bottom of the processing chamber and not configured to rotate, the ESC 101 and other ESCs disclosed herein may be attached to the bottom or top of the processing chamber and may be configured as a spin chuck that rotates during substrate processing. When attached to the top of the processing chamber, the ESC may have a configuration similar to that disclosed herein, but with the top and bottom reversed and may include peripheral substrate holding, clamping, and / or gripping hardware.

[0068] The substrate processing system 100 includes a processing chamber 104. The ESC 101 is housed within the processing chamber 104. The processing chamber 104 also houses other components (such as the upper electrode 105) and confines RF plasma. During operation, the substrate 107 is placed on the upper plate 102 of the ESC 101 and electrostatically clamped.

[0069] By way of example only, the upper electrode 105 may include a showerhead 109 for introducing and distributing gas. The showerhead 109 may include a stem portion 111 having one end connected to the upper surface of the processing chamber 104. The showerhead 109 is generally cylindrical and extends radially outward from the end of the stem portion 111 opposite the upper surface of the processing chamber 104. The substrate-facing surface or showerhead 109 includes holes through which the process gas or purge gas flows. Alternatively, the upper electrode 105 may include a conductive plate and the gas may be introduced in another way. One or both of the plates 102, 103 may function as a lower electrode.

[0070] One or both of the plates 102, 103 may include a temperature control element (TCE). As an example, FIG. 1 shows an upper plate 102 that includes a TCE 110 and is used as a heating plate. An intermediate layer 114 is disposed between the plates 102, 103. The intermediate layer 114 may bond the upper plate 102 to the base plate 103. As an example, the intermediate layer may be formed of an adhesive suitable for bonding the upper plate 102 to the base plate 103. The base plate 103 may include one or more gas flow paths 115 and / or one or more coolant flow paths 116 for flowing backside gas over the back surface of the substrate 107 and flowing coolant through the base plate 103.

[0071] The RF generation system 120 generates an RF voltage and outputs it to the upper electrode 105 and the lower electrode (e.g., one or both of the plates 102, 103). One of the upper electrode 105 and the ESC 101 may be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 120 may be controlled by a system controller 121 and include one or more RF generators 122 (e.g., a capacitively coupled plasma RF power generator, a bias power generator, and / or other RF power generators) that generate an RF voltage, and the RF voltage is supplied to the upper electrode 105 and / or the ESC 101 by one or more matching / distribution circuit networks 124. As an example, a first RF generator 123, a second RF generator 125, a first RF matching circuit network 127, and a second RF matching circuit network 129 are illustrated. The first RF generator 123 and the first RF matching circuit network 127 may supply an RF voltage or simply connect the showerhead 109 to a ground reference. The second RF generator 125 and the second RF matching circuit network may each or collectively be referred to as a power source and supply an RF / bias voltage to the ESC 101. In one embodiment, the first RF generator 123 and the first RF matching circuit network 127 supply power to drive a plasma by ionizing a gas. In another embodiment, the second RF generator 125 and the second RF matching circuit network 129 supply power to drive a plasma by ionizing a gas. One of the RF generators 123, 125 may be a high-power RF generator that generates, for example, 6 to 10 kilowatts (kW) or more of power.

[0072] The second RF matching circuit network 129 includes an impedance 128 and supplies power to RF electrodes (such as RF electrodes 131 and 133) in plates 102 and 103. The RF electrodes may be disposed in one or both of the plates 102 and 103. For example, when used as a clamp electrode, the RF electrode may be disposed near the upper surface of the ESC 101, and / or when used for biasing, it may be disposed at other positions within the ESC 101. Alternatively or additionally, the RF electrode may receive power from other power sources. As an example, a portion of the RF electrode may receive power from the power supply 135 instead of or in addition to receiving power from the second RF matching circuit network 129. In one embodiment, the power supply 135 does not include a matching circuit network and / or the matching circuit network is not disposed between the power supply 135 and the RF electrode. A portion of the RF electrode may receive power from the second RF matching circuit network 129 and / or the power supply 135 to electrostatically clamp the substrate to the upper plate 102. The power supply 135 may be controlled by the system controller 121. A tuning circuit 139 may be connected between (i) the second RF matching circuit network 129 and the corresponding electrode among the electrodes 131, 133, and 137, and (ii) the power supply 135 and the corresponding electrode among the electrodes 131, 133, and 137. In one embodiment, the tuning circuit 139 is disposed outside the processing chamber 104 downstream from the second RF matching circuit network 129. Examples of the tuning circuit 139 are shown in FIGS. 2 to 11.

[0073] The gas supply system 130 includes one or more gas sources 132-1, 132-2, ···, and 132-N (collectively, gas source 132), where N is an integer greater than zero. The gas source 132 supplies one or more precursors and their gas mixtures. The gas source 132 may supply an etching gas, a carrier gas, and / or a purge gas. Vaporized precursors may be used. The gas source 132 is connected to the manifold 140 by valves 134-1, 134-2, ···, and 134-N (collectively, valve 134) and mass flow controllers 136-1, 136-2, ···, and 136-N (collectively, mass flow controller 136). The output of the manifold 140 is supplied to the processing chamber 104. By way of example only, the output of the manifold 140 is supplied to the showerhead 109.

[0074] The substrate processing system 100 further includes a cooling system 141 with a temperature controller 142, and the temperature controller 142 may be connected to the TCE 110. In one embodiment, the TCE 110 is not provided. Although shown separately from the system controller 121, the temperature controller 142 may be implemented as part of the system controller 121. One or both of the plates 102, 103 may include a plurality of temperature-controlled zones (e.g., four zones, where each zone includes four temperature sensors).

[0075] The temperature controller 142 may control the operation and thus the temperature of the TCE 110 to control the temperatures of the plates 102, 103 and the substrate (e.g., substrate 107). The temperature controller 142 and / or the system controller 121 may control the flow rate of the backside gas (e.g., helium) sent to the gas flow path 115 to cool the substrate by controlling the flow from one or more gas sources 132 to the gas flow path 115. Further, the temperature controller 142 may communicate with the coolant assembly 146 to control the flow of the first coolant through the flow path 116 (the pressure and flow rate of the cooling fluid). The first coolant assembly 146 may receive the cooling fluid from a reservoir (not shown). For example, the coolant assembly 146 may comprise a coolant pump and a reservoir. The temperature controller 142 actuates the coolant assembly 146 to flow the coolant through the flow path 116 to cool the base plate 103. The temperature controller 142 may control the rate at which the coolant flows and the temperature of the coolant. The temperature controller 142 controls the current supplied to the TCE 110 and the pressure and flow rate of the gas and / or coolant supplied to the flow paths 115, 116 based on parameters detected by the sensors 143, 144 within the processing chamber 104. The sensors 143, 144 may include resistance temperature devices, thermocouples, digital temperature sensors, temperature probes, and / or other suitable temperature sensors. The sensors 143, 144 and / or other sensors provided in the substrate processing system 100 may be used to detect parameters such as temperature, gas pressure, voltage, current level, etc. During the etching process, the substrate 107 may be heated by a predetermined temperature (e.g., 120 degrees Celsius (120 °C)) in the presence of high-power plasma. The flow of gas and / or coolant through the flow paths 115, 116 lowers the temperature of the base plate 103, which in turn lowers the temperature of the substrate 107 (e.g., cools from 120 °C to 80 °C).

[0076] Valve 156 and pump 158 may be used to evacuate reactants from the processing chamber 104. The system controller 121 may control the components of the substrate processing system 100, including controlling the supplied RF power level, the pressure and flow rate of the supplied gas, RF matching, etc. The system controller 121 controls the states of valve 156 and pump 158. Robot 170 may be used to supply a substrate onto the ESC 101 and remove the substrate from the ESC 101. For example, robot 170 may transfer the substrate between the ESC 101 and the load lock 172. Robot 170 may be controlled by the system controller 121. The system controller 121 may control the operation of the load lock 172.

[0077] Valves, gas and / or coolant pumps, power supplies, RF generators, etc. may be referred to as actuators. TCEs, gas flow paths, coolant flow paths, etc. may be referred to as temperature control elements.

[0078] The system controller 121 may control the impedance state of the tuning circuit 139. Examples of impedance are shown in FIGS. 7-11. The impedance of the tuning circuit 139 may be adjusted based on feedback signals received from sensors 143, 144, 145, and / or other sensors in one or both of the substrate support 101, the processing chamber 104, the second RF matching circuit network 129, and / or the power supplies 125, 135. Sensor 145 may detect the voltage, current level, and power level in the second RF matching circuit network 129. Although the sensors are shown within the base plate 103, one or more of those sensors may be disposed within the upper plate 102. Sensor 104 may be disposed anywhere within the substrate support 101. Sensor 143 may be disposed anywhere within the processing chamber 104.

[0079] The system controller 121 may further control the state of the impedance 128. The state of the impedance 128 may be set such that one or more impedances of one or more outputs of the second RF matching circuit network 129 match the impedance seen at the input of the tuning circuit 139. The impedance seen at the input of the tuning circuit 139 is based on the impedance of the substrate support 101 and the tuning circuit 139. When adjusting the impedance of the tuning circuit 139, the system controller 121 may correspondingly adjust the impedance of the second RF matching circuit network 129.

[0080] In FIGS. 2 to 11 described below, a specific number of tuning circuits, impedances, clamp electrodes, RF electrodes, and / or other elements are illustrated, but any number of each element may be provided. Also, the tuning circuits, impedances, clamp electrodes, and RF electrodes are illustrated as having a specific arrangement, specific size, shape, and pattern, but the above elements may have different arrangements, different sizes, shapes, and patterns.

[0081] FIG. 2 shows a capacitive coupling circuit 200 including a clamp tuning circuit 202, an RF tuning circuit 204, a clamp electrode 206, and an RF electrode 208. A cross-sectional view of a showerhead (i.e., the upper electrode) 210 and an ESC 212 is shown. The showerhead 210 may be connected to a reference potential or ground 214. In one embodiment, the showerhead 210 is RF powered by the first RF matching circuit network 127 of FIG. 1. A plasma 216 is provided between the showerhead 210 and the ESC 212. A substrate 218 is disposed on the ESC 212.

[0082] The clamp tuning circuit 202 may be used to control the clamp voltage, current level, phase, power level, and / or frequency provided to the clamp electrode 206. The RF tuning circuit 204 may be used to control the bias voltage, current level, power level, and / or frequency provided to the RF electrode 208. The tuning circuits 202, 204 may receive power P inner , P outer from, for example, the second RF matching circuit network 129 (or the first power supply) and / or the power supply 135 (or the second power supply) of FIG. 1 and may be used to adjust the voltage drop through the plasma. This may include adjusting the voltage difference at each pair of a point above the surface of the substrate support 101 of FIG. 1 and a point along the surface. Examples of the tuning circuits 202, 204 are shown in FIG. 6. The tuning circuits 202, 204 may include one or more of the impedances as shown in FIG. 6. The tuning circuits 202, 204 need not include parallel impedance paths or may include a transmission line instead of a series impedance path. Examples of parallel and series impedance paths are shown in FIG. 6. Examples of the impedances that may be provided in the tuning circuits 202, 204 are shown in FIGS. 7-11. The impedances may be connected in series or in parallel, may be shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short circuits or open circuits, filtering elements (or filters), and / or other impedances. As an example, the clamp electrode 206 may be circular and the RF electrode 208 may be annular.

[0083] FIG. 3 shows a capacitive coupling circuit 300 including a first clamp tuning circuit 302, a second clamp tuning circuit 303, an outer RF tuning circuit 304, a first clamp electrode 306, a second clamp electrode 307, and an RF electrode 308. A cross-sectional view of a showerhead (i.e., upper electrode) 310 and an ESC 312 is shown. The showerhead 310 may be connected to a reference potential or ground 314. In one embodiment, the showerhead 310 is RF powered by the first RF matching circuit network 127 of FIG. 1. A plasma 316 is provided between the showerhead 310 and the ESC 312. A substrate 318 is disposed on the ESC 312.

[0084] The clamp tuning circuits 302 and 303 may be used to control the clamp voltage, current level, power level, and / or frequency provided to the clamp electrodes 306 and 307. The RF tuning circuit 304 may be used to control the bias voltage, current level, power level, and / or frequency provided to the RF electrode 308. The tuning circuits 302, 303, and 304 may receive power P clamp1 , P clamp2 , and P outer from, for example, the second RF matching circuit network 129 (or first power supply) of FIG. 1, the power supply 135 (or second power supply) of FIG. 1, and / or one or more other power supplies. The tuning circuits 302, 303, and 304 may be used to adjust the voltage drop through the plasma. In one embodiment, P clamp1 is P clamp2It is equal to. Examples of the tuning circuits 302, 303, and 304 are shown in FIG. 6. The tuning circuits 302, 303, 304 may include one or more of the impedances as shown in FIG. 6. The tuning circuits 302, 303, 304 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of the impedances that may be provided in the tuning circuits 302, 303, 304 are shown in FIGS. 7 to 11. The impedances may be connected in series or in parallel, may be shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short circuits or open circuits, filtering elements, and / or other impedances. As an example, the clamp electrodes 306, 307 may be circular, and the RF electrode 308 may be annular.

[0085] FIG. 4 shows a capacitive coupling circuit 400 including a clamp tuning circuit 402, an inner RF tuning circuit 404, an outer RF tuning circuit 405, a clamp electrode 406, an inner bias electrode 408, and an outer bias electrode 409. A cross-sectional view of a showerhead (i.e., the upper electrode) 410 and an ESC 412 is shown. The showerhead 410 may be connected to a reference potential or ground 414. In one embodiment, the showerhead 410 is RF-powered by the first RF matching circuit network 127 of FIG. 1. Plasma 416 is provided between the showerhead 410 and the ESC 412. A substrate 418 is disposed on the ESC 412.

[0086] The clamp tuning circuit 402 may be used to control the clamp voltage, current level, phase, power level, and / or frequency provided to the clamp electrode 406. The RF tuning circuits 404, 405 may be used to control the bias voltage, current level, power level, and / or frequency provided to the bias electrodes 408, 409. The tuning circuits 402, 404, 405 may receive power P clamp , P inner , P outer from, for example, the second RF matching circuit network 129 (or the first power supply) of FIG. 1, the power supply 135 (or the second power supply) of FIG. 1, and / or one or more other power supplies. The tuning circuits 402, 404, 405 may be used to adjust the voltage drop through the plasma. An example of the tuning circuits 402, 404, 405 is shown in FIG. 6. The tuning circuits 402, 404, 405 may include one or more of the impedances as shown in FIG. 6. The tuning circuits 402, 404, 405 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of the impedances that may be provided in the tuning circuits 402, 404, 405 are shown in FIGS. 7-11. The impedances may be connected in series or in parallel, may be shunt impedances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short circuits or open circuits, filtering elements, and / or other impedances. As an example, the clamp electrode 406 and the inner bias electrode 408 may be circular, and the outer bias electrode 409 may be annular.

[0087] FIG. 5 shows a capacitive coupling circuit 500 including a clamp tuning circuit 502, a first inner RF tuning circuit 504, a second inner tuning circuit 505, an outer RF tuning circuit 506, a clamp electrode 507, a first inner bias electrode 508, a second inner bias electrode 509, and an outer bias electrode 510. A cross-sectional view of a showerhead (i.e., the upper electrode) 511 and an ESC 512 is shown. The showerhead 511 may be connected to a reference potential or ground 514. In one embodiment, the showerhead 511 is RF-powered by the first RF matching circuit network 127 of FIG. 1. A plasma 516 is provided between the showerhead 511 and the ESC 512. A substrate 518 is disposed on the ESC 512.

[0088] The clamp tuning circuit 502 may be used to control a clamp voltage, current level, power level, and / or frequency provided to the clamp electrode 507. The RF tuning circuits 504, 505, 506 may be used to control a bias voltage, current level, phase, power level, and / or frequency provided to the bias electrodes 508, 509, 510. The tuning circuits 502, 504, 505, 506 may receive power P from, for example, the second RF matching circuit network 129 (or the first power supply) of FIG. 1, the power supply 135 (or the second power supply) of FIG. 1, and / or one or more other power supplies clamp , P inner1 , P inner2 , P outermay be received. Tuning circuits 502, 504, 505, 506 may be used to adjust the voltage drop through the plasma. Examples of tuning circuits 502, 504, 505, 506 are shown in FIG. 6. Tuning circuits 502, 504, 505, 506 may comprise one or more of the impedances as shown in FIG. 6. Tuning circuits 502, 504, 505, 506 may not comprise parallel impedance paths, or may comprise transmission lines instead of series impedance paths. Examples of the impedances that may be provided in tuning circuits 502, 504, 505, 506 are shown in FIGS. 7 to 11. The impedances may be connected in series or in parallel, may be shunt reactances, and / or may include capacitors, inductors, resistors, reactances, transmission lines, short circuits or open circuits, filtering elements, and / or other impedances. As an example, the clamp electrode 507 and bias electrodes 508, 509 may be circular, and the outer bias electrode 510 may be annular.

[0089] FIG. 6 shows a tuning circuit 600 for an electrode (or load) 602 such as a clamp electrode or a bias electrode. Tuning circuit 600 may be replaced with any of the tuning circuits 202, 204, 302, 304, 305, 402, 404, 405, 502, 504, 505, and 506 of FIGS. 2-5. Examples of tuning circuit 600 are shown in FIGS. 9-10. Tuning circuit 600 may receive RF power from an RF power source 604 (such as one of the power sources 129, 135 of FIG. 1). Tuning circuit 600 may include a series impedance path 605 having a series impedance set 606 and a parallel impedance path 607 having a parallel impedance set 608. Series impedance set 606 includes one or more impedances 609 connected in series between RF power source 604 and load 602. Series impedance set 606 and one or more impedances 609 are connected between load 602 and a power supply terminal 610. Power supply terminal 610 is connected to RF power source 604. Parallel impedance set 608 is connected between (i) a power supply terminal 610 connected between RF power source 604 and series impedance set 606 and (ii) a reference terminal or ground 612. Parallel impedance set 608 may include one or more impedances 613 connected in parallel between power supply terminal 610 and reference terminal 612.

[0090] One or both of impedances 609, 613 may be a fixed impedance. Additionally or alternatively, one or both of impedances 609, 613 may be a variable impedance, and the variable impedance may be adjusted by system controller 121 of FIG. 1 based on, for example: a current processing recipe; current operating parameters; parameters measured and / or determined based on the output of one or more sensors (such as sensor 143 of FIG. 1); and / or characteristics and / or properties of the processing system, ESC, and substrate.

[0091] In FIGS. 7 to 11 below, specific impedances are illustrated, although other impedances may be provided. The impedance may include "stray" inductance from the wire and / or other conductive circuit elements.

[0092] FIG. 7 shows a tuning circuit 700 that may be connected to a single RF power supply 702. The tuning circuit 700 includes series-connected inductors L1 to L3 and capacitors C1 to C3 for two clamp electrodes 706, 708, and a bias electrode ring 710. The RF power supply 702 may operate in the same manner as the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 711. In one embodiment (also referred to as a grounded pedestal configuration), the RF power supply 702 is not provided and the capacitors C1 to C3 are connected to ground 711.

[0093] In FIG. 7, cross-sectional views of the electrodes 706, 708, 710 are shown. The electrodes 706, 708, 710 may be concentrically arranged. L1 and C1 are serially connected between (i) the RF power supply 702 and the common terminal 712 and (ii) the first inner clamp electrode 706. L2 and C2 are serially connected between (i) the RF power supply 702 and the common (or power) terminal 712 and (ii) the central terminal 714, and the central terminal 714 is connected to two points on the bias electrode ring 710. L3 and C3 are serially connected between (i) the RF power supply 702 and the common terminal 712 and (ii) the second inner clamp electrode 708.

[0094] The inductors L1 to L3 and the capacitors C1 to C3 may have fixed values as described above or may be variable devices controlled by the system controller 121 of FIG. 1. Although the inductors L1 to L3 and the capacitors C1 to C3 are shown, other impedances may be incorporated into the tuning circuit 700.

[0095] FIG. 7 provides an example where power is supplied to a common node (or terminal) and split to supply power to a plurality of electrodes. The impedance of each path to each electrode may be changed by the impedance (or series-connected inductance and capacitance) within the corresponding path.

[0096] FIG. 8 shows a tuning circuit 800 that may be connected to a single RF power source 802. The tuning circuit 800 includes shunt inductors L1 - L3 and shunt capacitors C1 - C3 for two clamp electrodes 804, 806, and a bias electrode ring 808. The RF power source 802 may operate in the same manner as the power sources 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 811. The RF power source 802 is connected to a common (or power) terminal 812, and the common terminal 812 is connected to the clamp electrodes 802, 806, and a central terminal 814.

[0097] In one embodiment (also referred to as a grounded pedestal configuration), the RF power source 802 is not provided and the terminal 812 is connected to ground 811. When the terminal 812 is connected to ground 811, one or more series-connected impedances may be connected (i) between node 820 and ground 811, (ii) between node 822 and ground 811, and / or between node 824 and ground 811. The above one or more series-connected impedances may be the same as the impedances L1 - L3 and C1 - C3 or may include other impedances. This may be done, for example, when the corresponding showerhead is supplied with RF power.

[0098] A cross-sectional view of electrodes 802, 806, and 808 is shown. Electrodes 802, 806, and 808 may be arranged concentrically. L1 and C1 are connected in parallel between the first terminal 820 and the ground 811. The first terminal 820 is connected between the common terminal 812 and the first clamp electrode 802. L2 and C2 are connected in parallel between the second terminal 822 and the ground 811. The second terminal 822 is connected between the common terminal 812 and the first clamp electrode 802. L3 and C3 are connected in parallel between the third terminal 824 and the ground 811. The third terminal 824 is connected between the common terminal 812 and the second clamp electrode 806.

[0099] The inductors L1 to L3 and the capacitors C1 to C3 may have arbitrary and / or predetermined fixed values as described above, or may be variable devices controlled by the system controller 121 of FIG. 1. Although the inductors L1 to L3 and the capacitors C1 to C3 are shown, other impedances may be incorporated into the tuning circuit 800.

[0100] FIG. 8 provides another example when power is supplied to a common node and divided to supply a plurality of electrodes. The impedance of each path to each electrode may be changed by a shunt impedance (or shunt inductance and capacitance) connected to the corresponding path.

[0101] FIG. 9 shows a tuning circuit 900 connected to dual RF power supplies 902, 904. The tuning circuit 900 includes inductors L1 to L3 and capacitors C1 to C3 connected in series for two clamp electrodes 906, 908 and a bias electrode ring 910, and inductors L4 to L6 and capacitors C4 to C6 connected in shunt. The RF power supplies 902, 904 may operate in the same manner as the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 911. The RF power supplies 902, 904 are connected to a common (or power) terminal 912 and may supply power at the same frequency or different frequencies.

[0102] In one embodiment (also referred to as a grounded pedestal configuration), RF power supplies 902, 904 are not provided and terminal 912 is connected to ground 911. When terminal 912 is connected to ground 911, one or more series-connected impedances may be connected (i) between node 920 and ground 911, (ii) between node 922 and ground 911, and / or between node 924 and ground 911. The one or more series-connected impedances may be similar to impedances L1 - L3 and C1 - C3 or may include other impedances. This may be done, for example, when the corresponding showerhead is supplied with RF power.

[0103] Inductor L1 and capacitor C1 are serially connected between common terminal 912 and first clamp electrode 906. Inductor L2 and capacitor C2 are serially connected between central terminal 914 and common terminal 912. The central terminal is connected to two points on bias electrode ring 910.

[0104] Cross-sectional views of electrodes 906, 908, 910 are shown. Electrodes 906, 908, 910 may be concentrically arranged. L4 and C4 are connected in parallel between first terminal 920 and ground 911. First terminal 920 is connected between capacitor C1 and common terminal 912. L5 and C5 are connected in parallel between second terminal 922 and ground 911. Second terminal 922 is connected between capacitor C2 and common terminal 912. L6 and C6 are connected in parallel between third terminal 924 and ground 911. Third terminal 924 is connected between capacitor C3 and common terminal 912.

[0105] Inductors L1 to L6 and capacitors C1 to C6 may have arbitrary and / or predetermined fixed values as described above, or may be variable devices controlled by the system controller 121 of FIG. 1. Although inductors L1 to L6 and capacitors C1 to C6 are shown, other impedances may be incorporated into the tuning circuit 900. L4 to L6 and C4 to C6 may be any circuit network, and the circuit network may not include inductors and / or capacitors.

[0106] FIG. 10 shows that two tuning circuits 1000, 1002 may be connected to respective RF power supplies 1004, 1006. The first tuning circuit 1000 includes inductors L1, L3 and capacitors C1, C3 connected in series for two clamp electrodes 1010, 1012 and inductors L4, L6 and capacitors C4, C6 connected in shunt. The second tuning circuit 1002 includes an inductor L2 and a capacitor C2 connected in series for the bias electrode ring 1014 and an inductor L5 and a capacitor C5 connected in shunt. The RF power supplies 1004, 1006 may operate in the same manner as the power supplies 129, 135 of FIG. 1 and may be connected to a reference terminal or ground 1016. The RF power supply 1004 is connected to a common (or power) terminal 1018, and the common terminal 1018 is connected to C1, C3, C4, C6, L4, L6. The RF power supply 1006 is connected to the central terminal 1020 via C2 and L2. The RF power supplies 1004, 1006 may supply power at the same frequency or different frequencies.

[0107] The inductor L1 and the capacitor C1 are connected in series between the common terminal 1018 and the first clamp electrode 1010. The inductor L2 and the capacitor C2 are connected in series between the central terminal 1020 and the RF power supply 1006. The central terminal 1020 is connected to two points on the bias electrode ring 1014.

[0108] A cross-sectional view of electrodes 1010, 1012, and 1014 is shown. Electrodes 1010, 1012, and 1014 may be concentrically arranged. L4 and C4 are connected in parallel between the first terminal 1030 and ground 1016. The first terminal 1030 is connected between the capacitor C1 and the common terminal 1018. L5 and C5 are connected in parallel between the second terminal 1032 and ground 1016. The second terminal 1032 is connected between the capacitor C2 and the common terminal 1018. L6 and C6 are connected in parallel between the third terminal 1034 and ground 1016. The third terminal 1034 is connected between the capacitor C3 and the common terminal 1018.

[0109] Inductors L1 - L6 and capacitors C1 - C6 may have arbitrary and / or predetermined fixed values as described above, or may be variable devices controlled by the system controller 121 of FIG. 1. Although inductors L1 - L6 and capacitors C1 - C6 are shown, other impedances may be incorporated into the tuning circuit 1000. L4 - L6 and C4 - C6 may be any circuit network, and the circuit network may not include inductors and / or capacitors.

[0110] In one embodiment, the RF power source 1004 is not provided, and the terminal 1018 is connected to ground 1016. In another embodiment, the RF power source 1006 is not provided, and the terminal 1032 is connected to ground 1016. In yet another embodiment, neither the RF power sources 1004, 1006 are provided, and the terminals 1018 and 1032 are connected to ground 1016. When the terminal 1018 and / or the terminal 1032 is connected to ground 1016, one or more series-connected impedances may be connected (i) between the node 1030 and ground 1016, (ii) between the node 1034 and ground 1016, and / or between the node 1032 and ground 1016. The above one or more series-connected impedances may be the same as the impedances L1 - L3 and C1 - C3, or may include other impedances. This may be done, for example, when the corresponding showerhead is supplied with RF power.

[0111] FIG. 11 shows a tuning circuit 1100 with parallel-connected capacitors C1, C2 and inductors L1, L2 for two clamp electrodes 1102, 1104 and a bias electrode ring 1106. The electrodes 1102, 1104, 1106 may be concentrically arranged. Capacitors C1 and C2 are serially connected (i) between the clamp electrodes 1102, 1104 and (ii) between the power terminals 1110, 1112. Inductors L1, L2 are respectively connected in parallel with capacitors C1, C2 and are serially connected (i) between the clamp electrodes 1102, 1104 and (ii) between the power terminals 1110, 1112. Central terminals 1114, 1116 are respectively connected between capacitors C1, C2 and between inductors L1, L2. Central terminals 1114, 1116 are connected to both (i) two points on the bias electrode ring 1106 and (ii) a third (or central) power terminal 1118. Power terminals 1110, 1112 are respectively connected to the clamp electrodes 1102, 1104. Power terminals 1110, 1112, 1118 may be connected to their respective power supplies. In one embodiment, one or more of the power terminals 1110, 1112, 1118 are not connected to an RF power supply and are connected to a reference terminal or ground.

[0112] Inductors L1 - L2 and capacitors C1 - C2 may have arbitrary and / or predetermined fixed values as described above, or may be variable devices controlled by the system controller 121 of FIG. 1. Although inductors L1 - L2 and capacitors C1 - C2 are shown, other impedances may be incorporated into the tuning circuit 1100. Inductors L1 - L2 and capacitors C1 - C2 are coupling elements connected between the electrodes to supply power at multiple frequencies to each electrode.

[0113] The tuning circuit 1100 may be used in combination with any of the circuits shown in FIGS. 3, 5, and 7 - 10. For example, the capacitors C1, C2 and the inductors L1, L2 may be connected in the same way to: the electrodes 306, 307 and the electrode ring 308 in FIG. 3; the electrodes 508, 509 and the electrode ring 510 in FIG. 5; the electrodes 706, 708 and the electrode ring 710 in FIG. 7; the electrodes 802, 806 and the electrode ring 808 in FIG. 8; the electrodes 906, 908 and the electrode ring 910 in FIG. 9; and the electrodes 1010, 1012 and the electrode rings 1014 in FIG. 10.

[0114] In the above examples of FIGS. 2 - 11, when power is supplied at multiple frequencies, the path to a given electrode may include a frequency - dependent filtering element to supply power of a specific frequency to that electrode. The above - mentioned impedance may include a frequency - dependent filtering element. Further, the power supplied to different electrodes may be supplied by separate (or different) power sources operating at the same or different frequencies such that the power supplied by the power source is at the same or different frequencies. FIGS. 9 - 10 show examples with multiple power sources. As an alternative, one or more of the power sources may not be provided, and the corresponding terminals (e.g., terminals 912, 1018, 1032) may be connected to a reference terminal or ground.

[0115] FIG. 12 shows an example of a method of operating a substrate processing system that includes setting and adjusting impedance values for a tuning circuit of an electrostatic chuck electrode. The following steps are mainly described with respect to the embodiments of FIGS. 1 - 11, but can be easily modified for application to other embodiments of the present disclosure. The steps may be executed repeatedly. The steps may be executed, for example, by the system controller 121 in FIG. 1.

[0116] The method may start at step 1200. At step 1202, the process to be executed is selected. Examples of processes include a cleaning process, an etching process, a deposition process, an annealing process, etc. At step 1204, a recipe including system operation parameters is determined for the execution of the selected process. Examples of system operation parameters are: gas pressure and flow rate; the temperature of the process chamber, ESC, and substrate; RF bias voltage; clamp voltage; electrode voltage, current level, power level, and / or frequency, etc.

[0117] At step 1206, the characteristics and / or properties of the process chamber, ESC, and substrate are determined. Examples of characteristics and properties are geometric values of the process chamber, the composition of the ESC, the heating and cooling characteristics of the ESC (e.g., heating and cooling rates), the size of the ESC, the composition of the substrate, the materials of the ESC and / or substrate, etc.

[0118] At step 1208, the system operation parameters may be set by the system controller 121. This may include steps to control the operation of the above-described actuators. At step 1210, the impedance value of the tuning circuit is set based on the selected process, recipe, and system operation parameters. The impedance value may be set additionally or alternatively based on the characteristics and / or properties of the process chamber, ESC, and / or substrate. As an example, a look-up table associating the impedance value with other parameters, characteristics, and / or properties described herein may be stored in the memory of the system controller 121 and / or accessed by the system controller 121. The system controller 121 may set the impedance 128 of the second RF matching circuit network 129 as described above.

[0119] In operation 1212, the substrate may be placed on the ESC. This may include supplying a clamping voltage to clamp the substrate to the ESC. In operation 1214, a processing operation is executed. Examples of processing operations include a cleaning operation, a gas flowing operation, a plasma flowing and igniting operation, an etching operation, a deposition video, an annealing operation, an operation after annealing, a purging operation of the processing chamber, and the like.

[0120] Operations 1216, 1218, 1220, and 1222 may be executed during the execution of operation 1212. In operation 1216, a sensor output signal including sensor output data of the substrate processing system is monitored. This may include receiving signals from sensors 143, 144, and 145 in FIG. 1. In operation 1218, parameters may be determined based on the sensor output signals, data, and / or corresponding measured values (such as temperature, gas pressure, voltage, current level, power level, etc.) from sensors 143, 144, 145, and / or other sensors.

[0121] In operation 1220, the system controller 121 may determine whether to adjust the impedance value of the tuning circuit based on the measured values and / or the determined parameters. This determination may be based on the selected process, recipe, system operation parameters, and / or the characteristics and / or properties of the processing chamber, ESC, and / or substrate. The characteristics may change dynamically. In one embodiment, the impedance value is adjusted to follow a predetermined trajectory based on the change in characteristics. The predetermined trajectory may be, for example, a predetermined curve stored in the memory. A table associating the impedance value with other values and parameters may be stored in the memory. If one or more impedance values are changed, operation 1222 is executed, and if not, operation 1216 may be executed. In one embodiment, the power supplied to one or more electrodes is adjusted by changing the value of the corresponding impedance. Thereby, the stress, thickness, uniformity, refractive index, etching rate, deposition rate, and / or other intrinsic values, and / or profile parameters of the substrate can be changed.

[0122] In operation 1222, system controller 121 adjusts one or more impedance values of the tuning circuit, for example, by varying the inductance, capacitance, impedance, and / or resistance of one or more impedances. This adjustment (or amount of adjustment) may be based on measured and / or determined parameters, selected processes, recipes, system operating parameters, and / or the characteristics and / or properties of the process chamber, ESC, and / or substrate. System controller 121 may adjust impedance 128 of the second RF matching circuit network 129 as described above. After operation 1222, operation 1216 may be performed.

[0123] In operation 1224, system controller 121 determines whether to modify the current process or execute another process. If the current process is modified or another process is executed, operation 1202 may be performed. If the current process is not modified and no further process is executed, the method may end in operation 1226.

[0124] The above operations are intended to be illustrative. The operations may be performed in order, tuned, simultaneously, continuously, within overlapping periods, or in a different order, depending on the application. Also, any of the operations may be skipped or omitted depending on the order of the embodiments and / or events.

[0125] FIG. 13 shows an example 1300 of a substrate support having an outer ring electrode 1302 and two inner electrodes 1304, 1306. Electrodes 1302, 1304, 1306 are provided as an example of two inner electrodes and an outer electrode as shown in FIGS. 3, 5, and 7-11. Inner electrodes 1304, 1306 may be "D"-shaped electrodes and are disposed radially inside the outer ring electrode 1302. Gaps 1308 and 1310 exist between inner electrodes 1304, 1306 and the outer ring electrode 1302. The outer ring electrode 1302 may include an outer ring 1311 and a linear central member 1312 extending between the inner electrodes 1304, 1306. Gaps 1314 and 1316 may exist between inner electrodes 1304, 1306 and the central member 1312. The central member 1312 extends between the inner electrodes 1304, 1306 through the central region 1320 of the outer ring 1311 and bisects the central region 1320. In one embodiment, power is supplied to the outer ring electrode 1302 at the center of the central member 1312. Power may be provided to portions of the inner electrodes 1304, 1306 near the center of the central member 1312.

[0126] The above examples provide an RF tuning system having a tuning circuit with impedance for setting and adjusting parameters of electrodes in an electrostatic chuck and / or other pedestals (or substrate supports). The pedestal may not be an electrostatic chuck. This provides spatial adjustment of the power supplied to the plasma in a processing chamber (e.g., a PECVD reactor). These examples provide new control parameters for film deposition and uniformity. As an example including an outer annular electrode and an inner circular electrode, the relative intensity of the plasma at the outer periphery of the substrate may be varied by modulating the power supplied to the electrodes. This can be achieved by modulating (i.e., adjusting) the corresponding impedance, as described above. Different from changing gas parameters or the overall power, modulating the power supplied to the electrodes does not necessarily change the overall parameters affecting the entire substrate, but enables changing a selected region of the film on the substrate (e.g., the peripheral portion of the film on the substrate). This is different from the prior art that includes using a metal or dielectric ring to modify the outer portion of the plasma (which can cause fluctuations in the gas flow and as a result may have an overall effect of changing the film rather than just the peripheral portion of the film on the substrate).

[0127] The above description is merely illustrative in nature and is not intended to limit the present disclosure, its application examples, or its usage. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, other variations will become apparent upon studying the drawings, the specification, and the following claims, and the true scope of the present disclosure is not limited to those examples. It should be understood that one or more steps included in a method may be performed in a different order (or simultaneously) without modifying the principles of the present disclosure. Further, each of the embodiments is described as having specific features, but any one or more of the features described for any embodiment of the present disclosure can be implemented in any of the other embodiments and / or can be combined with any of the features of any of the other embodiments, even if the combinations are not explicitly described. In other words, the above embodiments are not mutually exclusive, and it is within the scope of the present disclosure to replace one or more embodiments with each other.

[0128] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers) are described using various terms such as "connected", "engaged", "coupled", "adjacent", "proximate", "on top of", "above", "below", and "disposed". When describing the relationship between a first and a second element in the present disclosure, unless explicitly stated to be "direct", the relationship can be a direct relationship where no other intervening element exists between the first and the second elements, but can also be an indirect relationship where one or more intervening elements exist (spatially or functionally) between the first and the second elements. As used herein, the expression "at least one of A, B, and C" should be interpreted to mean the logical disjunction (A or B or C) using the non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C".

[0129] In some embodiments, the controller is part of a system, and the system may be part of the examples described above. Such a system may include a semiconductor processing apparatus, such as one or more processing tools, one or more chambers, one or more platforms for processing, and / or certain processing components (such as wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling the operation of the system before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as a "controller" and may control various components or sub-components of the system. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system, such as the supply of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position and motion settings, and wafer transfer into and out of a load lock connected or coupled to a tool and other transfer tools and / or certain systems.

[0130] Generally, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuits may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions may be conveyed to the controller in the form of various individual settings (or program files) and are instructions that define operating parameters for performing a particular process on or for a semiconductor wafer, or operating parameters for the system. The operating parameters may, in some embodiments, be part of a recipe defined by a process engineer to achieve one or more processing steps during the processing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of the wafer.

[0131] The controller may, in some embodiments, be integrated with the system, connected to the system, networked with the system in some other way, or be part of a computer coupled to the system in those combinations, or may be connected to such a computer. For example, the controller may be within the "cloud", or may be all or part of a fab host computer system that enables remote access to wafer processing. The computer enables remote access to the system to change current processing parameters, set processing steps according to current processing, or start a new process, monitor the current progress of the manufacturing operation, examine the history of past manufacturing operations, or examine trends or performance metrics from multiple manufacturing operations. In some examples, a remote computer (e.g., a server) may provide a processing recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, and the parameters and / or settings are communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data, and the instructions specify parameters for each of the processing steps to be executed during one or more operations. It should be understood that the parameters may be specific to the type of processing being executed and the type of tool configured to interface with or be controlled by the controller. Thus, as described above, the controller may be distributed, such as by comprising one or more separate controllers networked to operate towards a common purpose (such as the processing and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more remotely located (such as at the platform level or located as part of a remote computer) integrated circuits that cooperate to control processing in the chamber.

[0132] Without limitation, examples of systems can include a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be related to or utilized in the processing and / or manufacturing of semiconductor wafers.

[0133] As described above, depending on the one or more processing steps performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or a tool used for transporting the wafer container towards or from a tool location and / or load port within a semiconductor manufacturing facility. This disclosure includes the following application examples. [Application Example 1] A substrate processing system for processing a substrate in a processing chamber, a power terminal, a substrate support configured to hold the substrate, the substrate support including a plurality of electrodes, the plurality of electrodes including a first electrode and a second electrode, the first electrode and the second electrode receiving power from a first power source via the power terminal, a substrate support, a first tuning circuit connected to at least one of the first electrode and the second electrode, comprising, the first tuning circuit is assigned to adjust one or more signals supplied to the first electrode, and the first tuning circuit, a first impedance set connected in series between the first electrode and the first power source, the first impedance set receiving a first signal from the first power source via the power terminal, the one or more signals including the first signal, a first impedance set, or, a second impedance set connected between an output of the first power source and a reference terminal, the second impedance set receiving the first signal from the first power source via the power terminal, a substrate processing system comprising at least one of the second impedance sets. [Application Example 2] The substrate processing system according to Application Example 1, wherein the first tuning circuit includes the first impedance set and the second impedance set. [Application Example 3] The substrate processing system according to Application Example 1, further comprising a system controller configured to adjust impedance values of the first impedance set and impedance values of the second impedance set. [Application Example 4] The substrate processing system according to Application Example 1, wherein the first tuning circuit adjusts a voltage, a current level, a phase, a power level, and / or a frequency of the one or more signals supplied to the first electrode. [Application Example 5] The substrate processing system according to Application Example 1, the first tuning circuit includes the first impedance set and the second impedance set, The second impedance set is connected between the first impedance set and the reference terminal, a substrate processing system. [Application Example 6] The substrate processing system according to Application Example 1, The first power supply includes a matching circuit network, The matching circuit network is connected between the first power supply and the power supply terminal, The first tuning circuit is connected between the power supply terminal and the first electrode, a substrate processing system. [Application Example 7] The substrate processing system according to Application Example 1, wherein the first tuning circuit is not included in the matching circuit network, a substrate processing system. [Application Example 8] The substrate processing system according to Application Example 7, wherein no matching circuit network is connected between the first power supply and the first tuning circuit, a substrate processing system. [Application Example 9] The substrate processing system according to Application Example 1, further comprising a second tuning circuit, The first tuning circuit is configured to adjust the voltage, current level, phase, power level, or frequency of the first signal supplied from the first power supply to the first electrode, The second tuning circuit is configured to adjust the voltage, current level, phase, power level, or frequency of the first signal supplied from the first power supply to the second electrode, The one or more signals include the first signal, a substrate processing system. [Application Example 10] The substrate processing system according to Application Example 1, further comprising a second power supply and a second tuning circuit, The first tuning circuit is configured to adjust the voltage, current level, phase, power level, or frequency of the first signal supplied from the first power supply to the first electrode, The second tuning circuit is configured to adjust the voltage, current level, phase, power level, or frequency of the second signal supplied from the second power supply to the second electrode, The one or more signals include the first signal and the second signal, a substrate processing system. [Application Example 11] The substrate processing system according to Application Example 1, wherein the plurality of electrodes are concentrically arranged, a substrate processing system. [Application Example 12] The substrate processing system according to Application Example 1, further comprising a second tuning circuit and a third tuning circuit, The plurality of electrodes includes a third electrode, The first tuning circuit is connected to the first electrode and is configured to modulate the first signal before being received by the first electrode. The second tuning circuit is connected to the second electrode and is configured to modulate the first signal or the second signal before being received by the second electrode. The third tuning circuit is connected to the third electrode and is configured to modulate the first signal or the third signal before being received by the third electrode, in a substrate processing system. [Application Example 13] A substrate processing system according to Application Example 12, wherein the first electrode, the second electrode, and the third electrode are concentrically arranged. [Application Example 14] A substrate processing system according to Application Example 12, wherein the substrate support is an electrostatic chuck, the first electrode and the second electrode are clamp electrodes and are configured to receive a clamp voltage to clamp the substrate to the substrate support, the third electrode is a bias electrode and is configured to receive a bias voltage, and the third signal is received from a third power source by the third tuning circuit, in a substrate processing system. [Application Example 15] A substrate processing system according to Application Example 12, wherein the substrate support is an electrostatic chuck, the first electrode is a clamp electrode, the second electrode and the third electrode are bias electrodes, and the second signal is received from a second power source by the second tuning circuit, in a substrate processing system. [Application Example 16] A substrate processing system according to Application Example 1, wherein the substrate support is an electrostatic chuck, the first electrode is a clamp electrode, the second electrode is a clamp electrode, the plurality of electrodes includes electrode rings, the first tuning circuit includes the first impedance set, the third impedance set, and the fourth impedance set, the first impedance set includes a first inductor and a first capacitor connected between the first clamp electrode and the first power source, the third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power source, and the fourth impedance set includes a third inductor and a third capacitor connected between the second clamp electrode and the first power source, in a substrate processing system. [Application Example 17] The substrate processing system according to Application Example 1, wherein the substrate support is an electrostatic chuck, the first electrode is a clamp electrode, the second electrode is a clamp electrode, the plurality of electrodes includes an electrode ring, the first tuning circuit includes the second impedance set, the third impedance set, and the fourth impedance set, the second impedance set includes a first inductor and a first capacitor connected in parallel between a first electrode terminal and the reference terminal, and the first electrode terminal is connected between the first clamp electrode and the first power supply, the third impedance set includes a second inductor and a second capacitor connected in parallel between a second electrode terminal and the reference terminal, and the second electrode terminal is connected between the electrode ring and the first power supply, the fourth impedance set includes a third inductor and a third capacitor connected in parallel between a third electrode terminal and the reference terminal, and the third electrode terminal is connected between the second clamp electrode and the first power supply. A substrate processing system. [Application Example 18] The substrate processing system according to Application Example 1, wherein the substrate support is an electrostatic chuck, the first electrode is a clamp electrode, the second electrode is a clamp electrode, the plurality of electrodes includes an electrode ring, the first tuning circuit includes the first impedance set, the second impedance set, the third impedance set, the fourth impedance set, the fifth impedance set, and the sixth impedance set, the first impedance set includes a first inductor and a first capacitor connected between the first clamp electrode and the first power supply, the third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power supply, the fourth impedance set includes a third inductor and a third capacitor connected between the second clamp electrode and the first power supply, the second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between a first electrode terminal and the reference terminal, and the first electrode terminal is connected between the first clamp electrode and the first power supply, The fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal, and the second electrode terminal is connected between the electrode ring and the first power supply. The sixth impedance set includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and the reference terminal, and the third electrode terminal is connected between the second clamp electrode and the first power supply, a substrate processing system. [Application Example 19] A substrate processing system according to Application Example 18, wherein a second power supply is connected to the first terminal, the second terminal, and the third terminal. [Application Example 20] A substrate processing system according to Application Example 1, further comprising a second tuning circuit. The substrate support is an electrostatic chuck. The first electrode is a first clamp electrode. The second electrode is a second clamp electrode. The plurality of electrodes includes an electrode ring. The first tuning circuit includes the first impedance set, the third impedance set, and the fourth impedance set. The second tuning circuit includes the second impedance set, the fifth impedance set, and the sixth impedance set. The first impedance set includes a first inductor and a first capacitor connected in parallel between the first clamp electrode and the first power supply. The third impedance set includes a second inductor and a second capacitor connected in parallel between the electrode ring and the second power supply. The fourth impedance set includes a third inductor and a third capacitor connected in parallel between the second clamp electrode and the first power supply. The second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and the reference terminal, and the first electrode terminal is connected between the first clamp electrode and the first power supply. The fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal, and the second electrode terminal is connected between the electrode ring and the second power supply. The sixth impedance set includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and the reference terminal, and the third electrode terminal is connected between the second clamp electrode and the first power supply. Substrate processing system. [Application Example 21] A substrate processing system according to Application Example 1, wherein a matching circuit network is not connected between the power supply terminal and the plurality of electrodes. [Application Example 22] A substrate processing system according to Application Example 1, wherein the power from the first power supply is divided to supply a part of the power to each of the plurality of electrodes. [Application Example 23] A substrate processing system according to Application Example 1, wherein the first impedance set and the second impedance set include variable inductances. [Application Example 24] A substrate processing system according to Application Example 1, further comprising: the processing chamber; the first power supply; a controller configured to adjust the impedances of the first impedance set and the second impedance set; A substrate processing system comprising. [Application Example 25] A substrate processing system for processing a substrate in a processing chamber, a substrate support configured to hold the substrate, the substrate support including a plurality of electrodes, the plurality of electrodes including a first electrode, a second electrode, and a third electrode; a first impedance connected between the first electrode and the third electrode; a second impedance connected between the second electrode and the third electrode; Comprising The first impedance is connected (i) between the first electrode and the second impedance and (ii) between the first power supply and the second impedance. The second impedance is connected (i) between the second electrode and the first impedance and (ii) between the second power supply and the first impedance. The first impedance and the second impedance are assigned to adjust (i) a first signal supplied to the first electrode by the first power supply and (ii) a second signal supplied to the second electrode by the second power supply. Substrate processing system. [Application Example 26] A substrate processing system according to Application Example 25, wherein the first impedance is connected in series with the second impedance. [Application Example 27] The substrate processing system according to Application Example 25, wherein the first impedance is connected between the first electrode and the third power supply, and the second impedance is connected between the second electrode and the third power supply. A substrate processing system [Application Example 28] The substrate processing system according to Application Example 27, wherein the third power supply is connected to the third electrode. A substrate processing system [Application Example 29] The substrate processing system according to Application Example 25, further comprising a third impedance and a fourth impedance, wherein the third impedance is connected between (i) the first electrode and the third electrode, (ii) the first electrode and the fourth impedance, and (iii) the first power supply and the fourth impedance, the fourth impedance is connected between (i) the second electrode and the third electrode, (ii) the second electrode and the third impedance, and (iii) the second power supply and the third impedance, and the third impedance and the fourth impedance are assigned to adjust (i) the first signal supplied to the first electrode by the first power supply and (ii) the second signal supplied to the second electrode by the second power supply. A substrate processing system [Application Example 30] The substrate processing system according to Application Example 29, wherein the first impedance and the third impedance are connected in parallel between the first electrode and the third power supply, and the second impedance and the fourth impedance are connected in parallel between the second electrode and the third power supply. A substrate processing system [Application Example 31] The substrate processing system according to Application Example 30, wherein the third power supply is connected to the third electrode. A substrate processing system [Application Example 32] The substrate processing system according to Application Example 25, wherein the first impedance set and the second impedance set include variable inductors. A substrate processing system [Application Example 33] The substrate processing system according to Application Example 25, further comprising the processing chamber, the first power supply, and a controller configured to adjust the impedances of the first impedance set and the second impedance set, A substrate processing system [Application Example 34] A method for operating a substrate processing system, wherein A step of selecting a process; A step of determining a recipe including system operation parameters for the selected process; A step of controlling a plurality of actuators to set the system operation parameters; A step of setting an impedance value of a first tuning circuit based on the selected process and the system operation parameters, wherein the first tuning circuit is connected to a first electrode in a substrate support, the first tuning circuit is assigned to adjust a signal supplied to the first electrode, and the first tuning circuit A first impedance set connected in series between the first electrode and a first power supply, wherein the first impedance set receives a first signal from the first power supply, and the one or more signals include the first signal, or a first impedance set; A step of including at least one of a second impedance set connected between an output of the first power supply and a reference terminal, wherein the second impedance set receives the first signal from the first power supply; A step of placing a substrate on the substrate support in a processing chamber; A step of performing a processing operation for the selected process including an operation of supplying power from the first power supply to a plurality of electrodes in the substrate support, wherein the plurality of electrodes include the first electrode and a second electrode, and the first electrode and the second electrode receive power from the first power supply via a power terminal; A method comprising. [Application Example 35] The method according to Application Example 34, further comprising a step of adjusting the impedance value of the first tuning circuit while performing the processing operation. [Application Example 36] The method according to Application Example 34, further comprising A step of collecting sensor output data; A step of determining one or more parameters based on the sensor output data; A step of adjusting the impedance value of the first tuning circuit based on the one or more parameters; A method comprising. [Application Example 37] The method according to Application Example 34, further comprising A step of determining a feature or characteristic of the processing chamber; A step of setting the impedance value of the first tuning circuit based on the feature or the characteristic; A method comprising. [Application Example 38] The method according to Application Example 34, further comprising A step of determining a feature or characteristic of the substrate support; A step of setting the impedance value of the first tuning circuit based on the feature or the characteristic; A method comprising the above. [Application Example 39] The method according to Application Example 38, further comprising a step of adjusting at least one of the first impedance set or the second impedance set based on a change in the characteristic to conform to respective trajectories. [Application Example 40] The method according to Application Example 39, further comprising: The feature, The characteristic, One or more other features of the substrate, the substrate support, or the processing chamber, and One or more other characteristics of the substrate, the substrate support, or the processing chamber, A method comprising a step of calculating or determining the trajectory based on at least one of the above. [Application Example 41] The method according to Application Example 34, further comprising: A step of determining a feature or characteristic of the substrate; A step of setting the impedance value of the first tuning circuit based on the feature or the characteristic; A method comprising the above. [Application Example 42] The method according to Application Example 34, further comprising: A step of supplying a clamping voltage to the first electrode by the first power supply to clamp the substrate to the substrate support; A step of supplying a bias voltage to the second electrode; A step of adjusting the clamping voltage and the bias voltage by the first tuning circuit or the second tuning circuit; Comprising, The substrate support is an electrostatic chuck. A method. [Application Example 43] The method according to Application Example 42, wherein the first tuning circuit comprises the first impedance and the second impedance. [Application Example 44] The method according to Application Example 42, further comprising: A step of adjusting the value of the impedance of the first tuning circuit to adjust the clamping voltage supplied to the first electrode; A step of adjusting the value of the impedance of the second tuning circuit to adjust the bias voltage supplied to the second electrode; Comprising, The substrate support is an electrostatic chuck. A method. [Application Example 45] The method according to Application Example 36, further comprising the step of adjusting the potential difference of the plasma at each pair of a point above the surface of the substrate support and a point along the surface by adjusting the impedance value of the first tuning circuit. [Application Example 46] The method according to Application Example 36, further comprising the step of adjusting the impedance value in the bias high-frequency matching circuit network based on the impedance value of the first tuning circuit, wherein the bias high-frequency matching circuit network is connected between the power supply and the first tuning circuit. [Application Example 47] A substrate processing system for processing a substrate in a processing chamber, A power supply terminal, A substrate support configured to hold the substrate, the substrate support including a plurality of electrodes, the plurality of electrodes including a first electrode and a second electrode, A first tuning circuit connected to the first electrode and assigned to adjust the impedance of the first electrode, the first tuning circuit including a first impedance set connected to the first electrode and ground, A second tuning circuit connected to the second electrode and assigned to adjust the impedance of the second electrode, the second tuning circuit including a second impedance set connected to the second electrode and ground, A substrate processing system comprising the above. [Application Example 48] The substrate processing system according to Application Example 47, wherein the first tuning circuit is connected in series between the first electrode and ground. [Application Example 49] The substrate processing system according to Application Example 48, wherein the first tuning circuit includes an inductor and a capacitor. [Application Example 50] The substrate processing system according to Application Example 49, wherein the second tuning circuit is connected in series between the second electrode and ground. [Application Example 51] The substrate processing system according to Application Example 50, wherein the second tuning circuit includes an inductor and a capacitor. [Application Example 52] The substrate processing system according to Application Example 47, The first tuning circuit is connected between the first electrode and the second electrode. The substrate processing system in which the first electrode and the second electrode are connected to the ground. [Application Example 53] The substrate processing system according to Application Example 52, further comprising: a third electrode connected to the ground; a third tuning circuit connected between the second electrode and the third electrode; The substrate processing system comprising the above. [Application Example 54] The substrate processing system according to Application Example 53, wherein the first tuning circuit includes a first inductor and a first capacitor; The substrate processing system in which the second tuning circuit includes a second inductor and a second capacitor. [Application Example 55] The substrate processing system according to Application Example 47, wherein the first tuning circuit and the second tuning circuit include variable inductances. [Application Example 56] The substrate processing system according to Application Example 47, further comprising: the processing chamber; a controller configured to adjust the impedances of the first impedance set and the second impedance set; The substrate processing system comprising the above.

Claims

1. A substrate processing system for processing a substrate in a processing chamber, comprising: a power terminal; a substrate support configured to hold the substrate, the substrate support including a plurality of electrodes including a first electrode and a second electrode, the first electrode and the second electrode receiving power from a first power source via the power terminal, the substrate support being an electrostatic chuck, the first electrode being a clamp electrode, the second electrode being a clamp electrode, and the plurality of electrodes including an electrode ring; a first tuning circuit connected to at least one of the first electrode and the second electrode; wherein: the first tuning circuit is assigned to adjust one or more signals supplied to the first electrode, and the first tuning circuit includes: a first impedance set connected in series between the first electrode and the first power source, the first impedance set receiving a first signal from the first power source via the power terminal, and the one or more signals including the first signal; the first impedance set includes a first inductor and a first capacitor connected between the first electrode and the first power source; the first tuning circuit further includes a third impedance set and a fourth impedance set; the third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power source; the fourth impedance set includes a third inductor and a third capacitor connected between the second electrode and the first power source; a substrate processing system.

2. The substrate processing system according to claim 1, wherein the first tuning circuit further includes a second impedance set connected between an output of the first power source and a reference terminal, the second impedance set receiving the first signal from the first power source via the power terminal.

3. The substrate processing system according to claim 2, further comprising a system controller configured to adjust impedance values of the first impedance set and the second impedance set.

4. The substrate processing system according to claim 1, wherein the first tuning circuit adjusts a voltage, a current level, a phase, a power level, and / or a frequency of the one or more signals supplied to the first electrode.

5. The substrate processing system according to claim 1, wherein the first tuning circuit further comprises a second impedance set, and the second impedance set is connected between the first impedance set and a reference terminal.

6. The substrate processing system according to claim 1, wherein the first power supply comprises a matching circuit network, the matching circuit network is connected between the first power supply and a power supply terminal, and the first tuning circuit is connected between the power supply terminal and the first electrode.

7. The substrate processing system according to claim 1, wherein the first tuning circuit is not included in the matching circuit network.

8. The substrate processing system according to claim 7, wherein no matching circuit network is connected between the first power supply and the first tuning circuit.

9. The substrate processing system according to claim 1, further comprising a second tuning circuit, wherein the first tuning circuit is configured to adjust a voltage, a current level, a phase, a power level, or a frequency of the first signal supplied from the first power supply to the first electrode, the second tuning circuit is configured to adjust a voltage, a current level, a phase, a power level, or a frequency of the first signal supplied from the first power supply to the second electrode, and the one or more signals include the first signal.

10. The substrate processing system according to claim 1, further comprising a second power supply and a second tuning circuit, wherein the first tuning circuit is configured to adjust a voltage, a current level, a phase, a power level, or a frequency of the first signal supplied from the first power supply to the first electrode, the second tuning circuit is configured to adjust a voltage, a current level, a phase, a power level, or a frequency of a second signal supplied from the second power supply to the second electrode, and the one or more signals include the first signal and the second signal.

11. The substrate processing system according to claim 1, wherein the plurality of electrodes are concentrically arranged.

12. The substrate processing system according to claim 1, further comprising a second tuning circuit and a third tuning circuit. The plurality of electrodes includes a third electrode. The first tuning circuit is connected to the first electrode and is configured to modulate the first signal before being received by the first electrode. The second tuning circuit is connected to the second electrode and is configured to modulate the first signal or the second signal before being received by the second electrode. The third tuning circuit is connected to the third electrode and is configured to modulate the first signal or the third signal before being received by the third electrode.

13. The substrate processing system according to claim 12, wherein the first electrode, the second electrode, and the third electrode are concentrically arranged.

14. The substrate processing system according to claim 12, wherein the first electrode and the second electrode are configured to receive a clamping voltage to clamp the substrate to the substrate support. The third electrode is a bias electrode and is configured to receive a bias voltage. The third signal is received from a third power source by the third tuning circuit.

15. A substrate processing system for processing a substrate in a processing chamber, a power supply terminal, a substrate support configured to hold the substrate, the substrate support being an electrostatic chuck, the substrate support including a plurality of electrodes, the plurality of electrodes including a first electrode and a second electrode, the first electrode and the second electrode receiving power from a first power source via the power supply terminal, the first electrode being a clamping electrode, the second electrode being a clamping electrode, the plurality of electrodes including an electrode ring. a first tuning circuit connected to at least one of the first electrode and the second electrode. and. The first tuning circuit is assigned to adjust one or more signals supplied to the first electrode. The first tuning circuit includes a second impedance set connected between the output of the first power supply and a reference terminal. The second impedance set receives a first signal from the first power supply via the power supply terminal, The first tuning circuit includes the second impedance set, a third impedance set, and a fourth impedance set. The second impedance set includes a first inductor and a first capacitor connected in parallel between a first electrode terminal and the reference terminal. The first electrode terminal is connected between the first electrode and the first power supply. The third impedance set includes a second inductor and a second capacitor connected in parallel between a second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the first power supply. The fourth impedance set includes a third inductor and a third capacitor connected in parallel between a third electrode terminal and the reference terminal. The third electrode terminal is connected between the second electrode and the first power supply. A substrate processing system.

16. A substrate processing system for processing a substrate in a processing chamber, A power supply terminal, A substrate support configured to hold the substrate. The substrate support is an electrostatic chuck. The substrate support includes a plurality of electrodes, the plurality of electrodes including a first electrode and a second electrode. The first electrode and the second electrode receive power from a first power supply via the power supply terminal. The first electrode is a clamp electrode, the second electrode is a clamp electrode, and the plurality of electrodes include an electrode ring. A substrate support, A first tuning circuit connected to at least one of the first electrode and the second electrode, Comprising, The first tuning circuit is assigned to adjust one or more signals supplied to the first electrode. The first tuning circuit includes a first impedance set connected in series between the first electrode and the first power supply. The first impedance set receives a first signal from the first power supply via the power supply terminal. The one or more signals include the first signal. The first tuning circuit includes the first impedance set, the second impedance set, the third impedance set, the fourth impedance set, the fifth impedance set, and the sixth impedance set. The first impedance set includes a first inductor and a first capacitor connected between the first electrode and the first power supply. The second impedance set is connected between the output of the first power supply and the reference terminal. The second impedance set receives the first signal from the first power supply via the power supply terminal. The third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the first power supply. The fourth impedance set includes a third inductor and a third capacitor connected between the second electrode and the first power supply. The second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and the reference terminal. The first electrode terminal is connected between the first electrode and the first power supply. The fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the first power supply. The sixth impedance set includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and the reference terminal. The third electrode terminal is connected between the second electrode and the first power supply, a substrate processing system.

17. A substrate processing system according to claim 16, wherein a second power supply is connected to the first electrode terminal, the second electrode terminal, and the third electrode terminal.

18. A substrate processing system for processing a substrate in a processing chamber, a power supply terminal, a substrate support configured to hold the substrate, the substrate support being an electrostatic chuck, the substrate support including a plurality of electrodes, the plurality of electrodes including a first electrode and a second electrode, the first electrode and the second electrode receiving power from a first power supply via the power supply terminal, the first electrode being a first clamp electrode, the second electrode being a second clamp electrode, the plurality of electrodes including an electrode ring, a substrate support. A first tuning circuit connected to at least one of the first electrode and the second electrode, wherein the first tuning circuit is assigned to adjust one or more signals supplied to the first electrode, the first tuning circuit includes a first impedance set connected in series between the first electrode and the first power supply, the first impedance set receives a first signal from the first power supply via the power supply terminal, the one or more signals include the first signal, and the first tuning circuit includes the first impedance set, a third impedance set, and a fourth impedance set, the first tuning circuit; A second tuning circuit; The second tuning circuit includes a second impedance set, a fifth impedance set, and a sixth impedance set; The first impedance set includes a first inductor and a first capacitor connected between the first clamp electrode and the first power supply; The third impedance set includes a second inductor and a second capacitor connected between the electrode ring and the second power supply; The fourth impedance set includes a third inductor and a third capacitor connected between the second clamp electrode and the first power supply; The second impedance set includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and the reference terminal, and the first electrode terminal is connected between the first clamp electrode and the first power supply; The fifth impedance set includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal, and the second electrode terminal is connected between the electrode ring and the second power supply; The sixth impedance set includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and the reference terminal, and the third electrode terminal is connected between the second clamp electrode and the first power supply, a substrate processing system.

19. A substrate processing system according to claim 1, wherein a matching circuit network is not connected between the power supply terminal and the plurality of electrodes.

20. The substrate processing system according to claim 1, wherein the power from the first power supply is divided to supply a part of the power to each of the plurality of electrodes.

21. The substrate processing system according to claim 1, wherein the first impedance set includes a variable inductor.

22. The substrate processing system according to claim 1, further comprising the processing chamber, the first power supply, a controller configured to adjust the impedance of the first impedance set, and a substrate processing system.

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