Semiconductor process equipment and its mounting device

Abstract

An embodiment of the present application provides a mounting device for semiconductor processing equipment, the mounting device being installed in a process chamber, comprising a base, a carrier, and a stopper ring structure, the stopper ring structure being fitted on the outer periphery of the base, an air blowing passage and a first gas uniformizing space being formed between the inner periphery wall and the outer periphery wall of the base, the first gas uniformizing space being connected to the air blowing passage, the carrier and the base being stacked on each other, the carrier being located below the base, and a gas flow path structure being provided between the carrier and the base, the gas flow path structure being connected to the first gas uniformizing space through a connecting passage, the gas flow path structure being used for transporting a purge gas to the first gas uniformizing space through the connecting passage, the first gas uniformizing space being used for uniformizing the purge gas, and the air blowing passage being used for blowing out the uniformized purge gas, thereby purging the bottom and side surfaces of the wafer.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor processing, and specifically to semiconductor process equipment and its mounting device.

Background Art

[0002] Currently, chemical vapor deposition (CVD) is a process of generating a solid thin film on the surface of a wafer by a gas chemical reaction. A mounting device for mounting a wafer to perform a thin film deposition process generally has an edge purge function and is used to blow away reaction gases near the back and side surfaces of the wafer, thereby avoiding backside plating and side plating of the wafer. As the requirements for process temperature, metal contamination, and particles increase, the material of the top plate for mounting the wafer in the mounting device is changed from metal aluminum and stainless steel to a ceramic material with high temperature resistance, good particle performance, and low metal contamination.

[0003] However, since it is difficult to process the top plate made of a ceramic material, it brings difficulties in processing the pipeline structure for edge purge on the top plate, thereby increasing the manufacturing cost and being unable to meet the requirement of uniformly air-blowing at the wafer edge in the thin film deposition process, and thus unable to guarantee the product quality.

Summary of the Invention

Problems to be Solved by the Invention

[0004] This application proposes a semiconductor process equipment and its mounting device to solve the technical problems existing in the prior art, namely, the high manufacturing cost and the inability to meet the requirement of uniformly air-blowing the edge purge of the wafer, in view of the drawbacks of the conventional method.

Means for Solving the Problems

[0005] In order to achieve the object of the present invention, it is provided in a process chamber of a semiconductor process equipment, and includes a base, a carrier, and a stopper structure. The upper surface of the base is used for placing a wafer. The stopper structure is fitted on the outer periphery of the base and is used for restricting the position of the wafer. An air blow channel and a first gas homogenization space are formed between the inner peripheral wall of the stopper structure and the outer peripheral wall of the base. The first gas homogenization space communicates with the air blow channel. The carrier and the base are laminated on each other. The carrier is located below the base, and a gas flow channel structure is provided between the carrier and the base. A connection channel is provided on the base. The gas flow channel structure communicates with the first gas homogenization space through the connection channel. The gas flow channel structure is used for transporting purge gas to the first gas homogenization space through the connection channel. The first gas homogenization space is used for homogenizing the flowing purge gas. The air blow channel is for blowing out the homogenized purge gas to purge the bottom surface and the side surface of the wafer. There is provided a placing device for the semiconductor process equipment.

[0006] Optionally, the gas flow channel structure includes a gas guiding channel structure and a second gas homogenization space. The gas guiding channel structure communicates with the second gas homogenization space. The second gas homogenization space communicates with the first gas homogenization space through the connection channel. The gas guiding channel structure is used for transporting the purge gas to the second gas homogenization space. The second gas homogenization space is used for homogenizing the flowing purge gas.

[0007] Optionally, the volume of the second gas homogenization space is larger than the volume of the first gas homogenization space, and / or the ventilation cross-section of the connection channel is smaller than the ventilation cross-sections of the first gas homogenization space and the second gas homogenization space.

[0008] Optionally, the connection flow path includes gas restriction holes that penetrate through the plurality of bases, and the plurality of gas restriction holes are evenly arranged along the circumferential direction of the base, and both ends of each gas restriction hole communicate with the first gas homogenization space and the second gas homogenization space, respectively.

[0009] Optionally, each gas restriction hole includes a first straight through hole and a second straight through hole that are sequentially provided in the vertical direction, the first straight through hole is located above the second straight through hole, and the diameter of the first straight through hole is smaller than the diameter of the second straight through hole.

[0010] Optionally, the gas guide flow path structure includes at least one gas guide flow path and vent holes that penetrate through at least one of the carriers, each vent hole communicates with the intake end of at least one gas guide flow path, the vent holes are used to communicate with a purge gas source, and the exhaust ends of the gas guide flow paths are evenly provided at intervals along the circumferential direction of the second gas homogenization space, and all communicate with the second gas homogenization space.

[0011] Optionally, an annular groove and a plurality of straight grooves are formed on one of the surface of the carrier facing the base and the surface of the base facing the carrier, and the other of the surface of the carrier facing the base and the surface of the base facing the carrier is fitted into the annular groove to form the second gas homogenization space, and is fitted into each straight groove to form the gas guide flow path, or Annular grooves and a plurality of straight grooves are formed on both the surface of the carrier facing the base and the surface of the base facing the carrier. The carrier is fitted corresponding to the annular groove on the base to form the second gas homogenization space, and the carrier is fitted corresponding to the plurality of straight grooves on the base to form the gas guide flow path.

[0012] Optionally, the placement device further includes a support shaft, the support shaft is located below the carrier and is used to support the carrier. On the surface of the support shaft facing the carrier, a first gas homogenization flow path structure is provided. The first gas homogenization flow path structure communicates with the intake ends of the respective vent holes and is also in communication with a purge gas source.

[0013] Optionally, the first gas homogenization flow path structure includes at least one first arc-shaped flow path. The first arc-shaped flow path extends along the circumferential direction of the support shaft. Each of the first arc-shaped flow paths is provided corresponding to two of the vent holes. The intake ends of the two vent holes communicate with both ends of the first arc-shaped flow path respectively. The first arc-shaped flow path is provided with an intake port that communicates with the purge gas source at the midpoint position.

[0014] Optionally, the base is further provided with a plurality of first suction holes penetrating the base, and the plurality of first suction holes are evenly distributed along the circumferential direction of the base. The carrier is further provided with a plurality of second suction holes penetrating the carrier. The number of the second suction holes is the same as that of the first suction holes, and they are provided in a one-to-one correspondence. On the surface of the support shaft facing the carrier, a second gas homogenization flow path structure is further provided. The second gas homogenization flow path structure communicates with the intake ends of the respective second suction holes and is also in communication with a vacuum suction device.

[0015] Optionally, the second gas homogenization flow path structure includes at least one second arc-shaped flow path. The second arc-shaped flow path extends along the circumferential direction of the support shaft. Each of the second arc-shaped flow paths is provided corresponding to two of the second suction holes. The intake ends of the two second suction holes communicate with both ends of the second arc-shaped flow path respectively. The second arc-shaped flow path is provided with an intake port that communicates with the vacuum suction device at the midpoint position.

[0016] Optionally, there are two second arc-shaped channels, and they are symmetrically distributed with respect to the axis of the support shaft. The second gas homogenization channel structure further includes a third arc-shaped channel. The third arc-shaped channel extends along the circumferential direction of the support shaft, and both ends of the third arc-shaped channel communicate with the two second arc-shaped channels at the midpoint positions of the two second arc-shaped channels respectively. The third arc-shaped channel communicates with the vacuum suction device at the midpoint position.

[0017] Optionally, the stopping structure includes an annular body. On the inner peripheral wall of the annular body, a covering protruding to the outer peripheral wall of the base is provided. By having a gap between the inner peripheral wall of the covering and the outer peripheral wall of the base, the air blow channel is formed.

[0018] Optionally, a gas guiding groove is provided at the connection location between the upper surface and the inner peripheral surface of the covering. The gas guiding groove is annular and is provided circumferentially along the circumferential direction of the covering. The bottom surface of the gas guiding groove is lower than the upper surface of the base, and the diameter of the circumferential side surface of the gas guiding groove is larger than the diameter of the wafer. The gas guiding groove communicates with the air blow channel so as to guide the purge gas blown out from the air blow channel to the bottom surface and the side surface of the wafer.

[0019] Optionally, the base includes a base body. On the outer peripheral wall of the base body, a placement ring protruding to the inner peripheral wall of the annular body is provided. In the region of the inner peripheral wall of the annular body located below the covering, a lapping ring protruding to the base body is further provided. The lapping ring is laminated on the placement ring, and by having a gap between the lapping ring and the outer peripheral wall of the base body, the first gas homogenization space is formed.

[0020] Optionally, a positioning structure is provided between two mutually laminated surfaces of the wrapping ring and the placement ring. The positioning structure includes a positioning convex portion and a positioning concave portion, and the positioning convex portion is fitted into the positioning concave portion so as to regulate the relative positions of the wrapping ring and the placement ring.

[0021] Optionally, a protruding gas restriction ring is provided between the placement ring and the cover ring on the outer peripheral wall of the base body. By having a gap between the gas restriction ring and the cover ring, a gas restriction flow path is formed, and the gas restriction flow path is used to communicate the air blow flow path and the first gas homogenization space.

[0022] Optionally, the ventilation cross-section of the gas restriction flow path is smaller than that of the air blow flow path, and the ventilation cross-section of the air blow flow path is smaller than that of the first gas homogenization space. The ventilation cross-section of the connection flow path is larger than that of the gas restriction flow path.

[0023] Optionally, the base, the carrier, and the stopper structure are all made of aluminum nitride ceramic material.

[0024] As another technical solution, an embodiment of the present application includes a process chamber and the above-described placement device according to the embodiment of the present application, and the placement device further provides a semiconductor process device provided in the process chamber.

[0025] The beneficial technical effects of the technical solutions according to the embodiments of the present application are as follows.

[0026] The placement device according to the embodiment of the present application has a stopper structure fitted on the outer periphery of the base, an air blow flow path and a first gas homogenization space are formed between the inner peripheral wall of the stopper structure and the outer peripheral wall of the base, and a gas flow path structure is formed between the base and the carrier. The gas flow path structure is in the base. Connection flow pathIt is used to transport purge gas to the first gas homogenization space through which the purge gas is homogenized. After being homogenized, the purge gas is blown out through the air blow channel, thereby purging the bottom and side surfaces of the wafer. By using the first gas homogenization space to homogenize the purge gas, the gas can be blown out uniformly from the air blow channel, thereby ensuring that the influence on the airflow fields of the bottom and side surfaces of the wafer by edge air blow is the same. Furthermore, the consistency of process film formation is greatly improved, and the process yield is greatly improved. In addition, both the air blow channel and the first gas homogenization space are formed between the base and the stopper structure, and the gas flow channel structure is formed between the base and the carrier, so the structure is simple and easy to process and manufacture, thereby greatly reducing the application and manufacturing costs.

[0027] The semiconductor process equipment according to the embodiment of the present application can not only reduce the manufacturing cost by adopting the placement device according to the embodiment of the present application, but also improve the consistency of process film formation, thereby greatly improving the process yield.

[0028] Additional aspects and advantages of the present application are given in part in the following description, which will become apparent from the following description or be understood by the practice of the present application.

[0029] The above and / or additional aspects and advantages of the present application will become apparent and easier to understand from the description of the embodiments with reference to the following drawings.

Brief Description of the Drawings

[0030]

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Mode for Carrying Out the Invention

[0031] The following will describe the present application in detail. Examples of the embodiments of the present application are shown in the drawings, and the same or similar reference numerals throughout indicate the same or similar members, or members having the same or similar functions. Also, when it is not necessary to describe the details of the prior art to show the features of the present application, the description thereof will be omitted. The following embodiments described with reference to the drawings are exemplary and are only used to describe the present application and should not be construed as limiting the present application.

[0032] As will be understood by those skilled in the art, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present application pertains. Also, terms defined in a general dictionary should be understood to have the same meaning as in the context of the prior art, and should not be construed in an ideal or formal sense unless otherwise specifically defined herein.

[0033] The following will specifically describe the technical solution of the present application and how the technical solution of the present application solves the above technical problems in a specific embodiment.

[0034] First Embodiment Embodiments of the present application provide a placement device for semiconductor process equipment, which is provided in a process chamber (for example, the process chamber 7 shown in FIG. 4A). As shown in FIG. 1, the structural schematic diagram of the placement device includes a base 1, a carrier 2, and a stopping structure 3. The upper surface of the base 1 is used for placing the wafer 100. Optionally, the base 1 includes a base body 14, and the upper surface of the base body 14 is used for placing the wafer 100. The stopping structure 3 is fitted on the outer periphery of the base 1 and is used for restricting the position of the wafer 100. An air blow channel 51 and a first gas homogenization space 52 are formed between the inner peripheral wall of the stopping structure 3 and the outer peripheral wall of the base 1. The first gas homogenization space 52 communicates with the air blow channel 51. The carrier 2 and the base 1 are stacked on each other, the carrier 2 is located below the base 1, and a gas flow path structure 4 is provided between the carrier 2 and the base 1. A connection flow path 15 is provided on the base 1. The gas flow path structure 4 communicates with the first gas homogenization space 52 through the connection flow path 15. The gas flow path structure 4 is used for transporting purge gas to the first gas homogenization space 52 through the connection flow path 15. The first gas homogenization space 52 is used for homogenizing the flowing purge gas. The air blow channel 51 is for blowing out the homogenized purge gas to purge the bottom surface and side surface of the wafer 100 (i.e., the exposed part at the edge of the wafer 100).

[0035] As shown in FIG. 1, the semiconductor process equipment can be used to perform a chemical vapor deposition process on the wafer 100. However, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation. The base 1 can be made of a ceramic material and have a disk-shaped structure. The upper surface of the base 1 can be used to place the wafer 100, and it is possible that the diameter of the upper surface of the base 1 is smaller than the diameter of the wafer 100. Optionally, the base 1 is further provided with a high-frequency grounding electrode 101 for electrically connecting to or grounding a high-frequency power source. The carrier 2 can be made of a ceramic material and have a disk-shaped plate structure. The carrier 2 is provided by being laminated on the bottom of the base 1 and is provided in the process chamber via the support shaft 6. The support shaft 6 may be capable of moving up and down, and the lower end of the support shaft 6 can extend from the bottom of the process chamber, whereby it can be connected to an external lifting drive source. Also, a bellows for sealing the gap between the support shaft 6 and the process chamber is fitted to the support shaft 6, thereby ensuring the sealing performance of the process chamber. Optionally, a heating tube 21 for heating the wafer 100 may be provided in the carrier 2, and moreover, the heating tubes 21 may be provided corresponding to different regions of the carrier 2 respectively. For example, as shown in FIG. 1, there are two such heating tubes 21, which are respectively provided corresponding to the central region and the edge region of the carrier 2, thereby realizing partition temperature control. Moreover, a gas flow path structure 4 may be provided between the carrier 2 and the base 1. The gas flow path structure 4 is used to connect to a gas source to introduce a purge gas and transport the purge gas to the first gas homogenization space 52. The stopper structure 3 can be made of a ceramic material and have a sleeve structure. The stopper structure 3 may be fitted on the outer periphery of the base 1 to regulate the position of the wafer 100 on the base 1, but the embodiments of the present application are not limited thereto.An air blow channel 51 and a first gas homogenization space 52 may be formed between the inner peripheral wall of the stopper structure 3 and the outer peripheral wall of the base 1. For example, the air blow channel 51 and the first gas homogenization space 52 are provided in order from top to bottom, and the top of the first gas homogenization space 52 is communicated with the air blow channel 51, and the bottom is communicated with the gas channel structure 4 via the connection channel 15. It is used to homogenize the purge gas introduced by the gas channel structure 4. The air blow channel 51 is for blowing out the homogenized purge gas to purge the bottom and side surfaces of the wafer 100. Since the diameter of the upper surface of the base 1 is smaller than the diameter of the wafer 100, the purge gas blown out from the air blow channel 51 can flow through the exposed areas of the bottom and side surfaces of the wafer 100, thereby realizing uniform purging of the bottom and side surfaces of the wafer 100.

[0036] In the placement device according to the embodiment of the present application, a stopper structure 3 is fitted on the outer periphery of the base 1. An air blow channel 51 and a first gas homogenization space 52 are formed between the inner peripheral wall of the stopper structure 3 and the outer peripheral wall of the base 1, and a gas channel structure 4 is formed between the bottom surface of the base 1 and the upper surface of the carrier 2. The gas channel structure 4 is for introducing the purge gas into the base 1 Connection flow pathIt is used to transport to the first gas homogenization space 52 through 15, and the first gas homogenization space 52 enables the incoming purge gas to diffuse faster along the circumferential direction of the base 1, thereby playing a role in homogenizing the purge gas. The homogenized purge gas is blown out through the air blow channel so as to purge the bottom surface and the side surface of the wafer 100. By using the first gas homogenization space 52 to homogenize the purge gas, the gas can be blown out uniformly from the air blow channel 51, thereby ensuring that the influence on the airflow fields of the bottom surface and the side surface of the wafer 100 of the edge air blow is the same. Furthermore, the process film formation consistency is greatly improved, and the process yield is greatly improved. Also, both the air blow channel 51 and the first gas homogenization space 52 are formed between the base and the stopper structure, and the gas flow path structure is formed between the base and the carrier, so that the structure is simple and easy to process and manufacture, thereby greatly reducing the application and manufacturing costs.

[0037] In one embodiment of the present application, as shown in FIGS. 1 and 2, the gas flow path structure 4 includes a gas guiding flow path structure and a second gas homogenization space 41. The gas guiding flow path structure communicates with the second gas homogenization space 41, and the second gas homogenization space 41 communicates with the first gas homogenization space 52 via the connection flow path 15. Optionally, the second gas homogenization space 41 is annular and is provided opposite to the first gas homogenization space 52 in the vertical direction, and moreover, the volume of the second gas homogenization space 41 is larger than the volume of the first gas homogenization space 52. The gas guiding flow path structure is used to transport the purge gas to the second gas homogenization space 41, and the second gas homogenization space 41 is used to homogenize the flowing purge gas. Specifically, the purge gas blown out from the gas guiding flow path structure first performs first gas homogenization through the second gas homogenization space 41, then performs second gas homogenization through the first gas homogenization space 52, and finally is blown out to the bottom surface and side surface of the wafer 100 through the air blow flow path 51. By adopting the above design and performing gas homogenization on the purge gas twice through the two-stage gas homogenization space, the purge gas blown out from the air blow flow path 51 becomes more uniform, thereby further improving the edge purge uniformity of the wafer, further improving the process uniformity of the wafer, and improving the process yield.

[0038] Also, the second gas homogenization space 41 is closer to the gas source than the first gas homogenization space 52. When the purge gas enters the second gas homogenization space 41, the air flow velocity is fast and the non-uniformity is large. Therefore, by making the volume of the second gas homogenization space 41 larger than the volume of the first gas homogenization space 52, the first gas homogenization can be performed using the second gas homogenization space 41 with a large volume, and the air flow can be buffered better. In this way, after the purge gas is buffered by the second gas homogenization space 41, it enters the first gas homogenization space 52, and the gas can be more uniformly homogenized, and the uniformity of the purge gas is improved.

[0039] In one embodiment of the present application, as shown in FIGS. 1 and 8, the ventilation cross-section of the connection flow path 15 is smaller than the ventilation cross-sections of the first gas homogenization space 52 and the second gas homogenization space 41. Optionally, the connection flow path 15 includes gas restriction holes penetrating through a plurality of bases 1, the plurality of gas restriction holes are evenly arranged along the circumferential direction of the base 1, and both ends of each gas restriction hole communicate with the first gas homogenization space 52 and the second gas homogenization space 41 respectively. Optionally, each gas restriction hole penetrates through the base 1 in the vertical direction.

[0040] By adopting the gas restriction holes in the connection flow path 15, in the embodiment of the present application, it is easy to process, thereby significantly improving the processing yield and further reducing the application and maintenance costs. Furthermore, the ventilation cross-section of the connection flow path 15 (i.e., the ventilation cross-section of each gas restriction hole) is smaller than the ventilation cross-sections of the first gas homogenization space 52 and the second gas homogenization space 41, that is, the cross-section in contact with the air flow direction of the connection flow path 15 is smaller than the cross-sections in contact with the air flow directions of the first gas homogenization space 52 and the second gas homogenization space 41. In this way, the connection flow path 15 can perform a pressure boosting action on the purge gas carried out from the second gas homogenization space 41, and in combination with the gas homogenization action of the first gas homogenization space 52, can further improve the uniformity of the purge gas, thereby improving the uniformity of the wafer 100 and the process yield.

[0041] In the embodiment of the present application, as shown in FIGS. 2 and 3, the gas guiding flow path structure includes at least one gas guiding flow path 44 and ventilation holes 22 penetrating through at least one carrier 2. Each ventilation hole 22 communicates with the intake end 44a of at least one gas guiding flow path 44. The ventilation holes 22 are used to communicate with the purge gas source. By using each ventilation hole 22, not only can the purge gas be introduced into at least one gas guiding flow path 44, but also the purge gas can be simultaneously transported to the intake end 44a of each gas guiding flow path 44, thereby guaranteeing the uniformity of the purge gas.

[0042] The exhaust ends 44b of the gas guide channels 44 are evenly provided at intervals along the circumferential direction of the second gas homogenization space 41, and all communicate with the second gas homogenization space 41. For example, as shown in FIG. 3, there are two vent holes 22. Optionally, the two vent holes 22 are located at or near the central position of the base 1 and are used to communicate with the purge gas source. Each vent hole 22 communicates with the intake ends 44a of the four gas guide channels 44, that is, the intake ends 44a of the four gas guide channels 44 converge on and communicate with the same vent hole 22. The four gas guide channels 44 are provided at intervals along the circumferential direction of the second gas homogenization space 41, and the exhaust ends 44b of the four gas guide channels 44 all communicate with the second gas homogenization space 41. By adopting the above structure, the gas guide channel structure can transport the purge gas from a central position close to the base 1 along different directions to the edge position of the base 1, and reach different positions in the circumferential direction of the second gas homogenization space 41. Thereby, not only can the path of the purge gas be shortened and the flow rate of the purge gas be improved, but also the uniformity of the purge gas can be improved.

[0043] As a preferred embodiment, as shown in FIG. 2, the four gas guide channels 44 communicating with one of the vent holes 22 and the four gas guide channels 44 communicating with the other vent hole 22 can be symmetrically distributed with respect to the axis of the base 1, and the lengths of all the gas guide channels 44 (i.e., eight gas guide channels 44) are substantially the same, and the exhaust ends 44b of all the gas guide channels 44 (i.e., eight exhaust ends 44b) are evenly distributed along the circumferential direction of the second gas homogenization space 41. In this way, the purge gas flowing into each gas guide channel 44 from the intake end 44a can flow to each exhaust end 44b along the same length path at the same time, and moreover, it can flow uniformly into the second gas homogenization space 41 from each exhaust end 44b, thereby further improving the uniformity of the purge gas. Of course, in actual applications, the gas guide channel group may be three groups or multiple groups. Moreover, the embodiments of the present application do not limit the number and arrangement method of the vent holes 22 and the gas guide channels 44, and those skilled in the art can adjust the settings according to the actual situation by themselves.

[0044] In the embodiment of the present application, as shown in FIG. 2, on the surface facing the carrier 2 of the base 1 (i.e., the bottom surface 14a), an annular groove and a plurality of linear grooves are formed. The annular groove is fitted to the surface facing the base 1 of the carrier 2 (i.e., the upper surface) to form the second gas homogenization space 41, and each linear groove is fitted to the surface facing the base 1 of the carrier 2 (i.e., the upper surface) to form the gas guide flow path 44. However, the embodiment of the present application is not limited thereto. An annular groove and a plurality of linear grooves may be formed on the surface facing the base 1 of the carrier 2 (i.e., the upper surface). The annular groove is fitted to the surface facing the carrier 2 of the base 1 (i.e., the bottom surface 14a) to form the second gas homogenization space 41, and each linear groove is fitted to the surface facing the carrier 2 of the base 1 (i.e., the bottom surface 14a) to form the gas guide flow path 44. Alternatively, annular grooves and a plurality of linear grooves may be formed on both the surface facing the carrier 2 of the base 1 (i.e., the bottom surface 14a) and the surface facing the base 1 of the carrier 2 (i.e., the upper surface). The annular groove on the surface facing the carrier 2 of the base 1 (i.e., the bottom surface 14a) and the annular groove on the surface facing the base 1 of the carrier 2 are fitted to form the second gas homogenization space 41, and each linear groove on the surface facing the carrier 2 of the base 1 (i.e., the bottom surface 14a) and each linear groove on the surface facing the base 1 of the carrier 2 (i.e., the upper surface) are fitted to form the gas guide flow path 44.

[0045] In one embodiment of the present application, as shown in FIGS. 3, 4A, and 4B, the placement device further includes a support shaft 6, the support shaft 6 is located below the carrier 2 and is used to support the carrier 2. Optionally, as shown in FIG. 4A, a through hole 71 is provided at the bottom of the process chamber 7, and the lower end of the support shaft 6 passes through the through hole 71 and extends to the outside of the process chamber 7 so as to be connectable to a lifting drive source (not shown). Further, a bellows 9 is further provided outside the process chamber 7, the bellows 9 is fitted on the support shaft 6, the lower end of the bellows 9 is hermetically connected to the lower flange 8, the upper end of the bellows 9 is hermetically connected to the bottom of the process chamber 7 via the upper flange 10, and the bellows 9 is used for sealing the through hole 71, thereby ensuring the airtightness inside the process chamber 7.

[0046] Also, on the surface of the support shaft 6 facing the carrier 2 (i.e., the upper surface 6a), a first gas homogenization flow path structure is provided. The first gas homogenization flow path structure communicates with the intake ends of the respective ventilation holes 22, and the first gas homogenization flow path structure communicates with the purge gas source. The first gas homogenization flow path structure is used to achieve a gas homogenization effect on the flowing purge gas. In some embodiments, the first gas homogenization flow path structure includes at least one first arc-shaped flow path 61, and the first arc-shaped flow path 61 extends along the circumferential direction of the support shaft 6. Each first arc-shaped flow path 61 is provided corresponding to two of the ventilation holes 22. The intake ends of the two ventilation holes 22 communicate with both ends 61a of the first arc-shaped flow path 61, respectively. The first arc-shaped flow path 61 is provided with an intake port 61b communicating with the purge gas source at the midpoint position. The purge gas supplied from the purge gas source first enters the first arc-shaped flow path 61 from the intake port 61b of the first arc-shaped flow path 61, then is split into both ends 61a of the first arc-shaped flow path 61 simultaneously, and further flows into the corresponding gas guide flow path 44 through the corresponding two ventilation holes 22. The first arc-shaped flow path 61 can not only achieve a gas homogenization effect on the flowing purge gas, but also make the flow paths of the purge gas to each ventilation hole 22 the same, thereby realizing the homogenization of the distribution of the purge gas. In addition, by providing at least one first arc-shaped flow path 61 between the surface of the support shaft 6 facing the carrier 2 (i.e., the upper surface 6a) and the bottom surface of the carrier 2, the structure can be further simplified and the difficulty of processing and manufacturing can be reduced, thereby significantly reducing the application and manufacturing costs.

[0047] In this embodiment, there are a total of two ventilation holes 22. In this case, one first arc-shaped flow path 61 is provided corresponding to the two ventilation holes 22. However, the embodiments of the present application are not limited thereto. In actual applications, based on the specific number of ventilation holes 22 , the number and arrangement method of the first arc-shaped flow paths 61 can be set, and those skilled in the art can adjust the setting according to the actual situation.

[0048] In the embodiment of the present application, as shown in FIGS. 4, 5 and 6, in order to realize the vacuum adsorption function of the placement device, the base 1 (for example, the base body 14) is further provided with a plurality of first adsorption holes 16 penetrating through the base 1. For example, FIG. 6 shows four first adsorption holes 16, and the plurality of first adsorption holes 16 are evenly distributed along the circumferential direction of the base 1. Moreover, as shown in FIG. 7, the carrier 2 is provided with a plurality of second adsorption holes 23 penetrating through the carrier 2. The number of the second adsorption holes 23 is the same as that of the first adsorption holes 16, and they are provided in a one-to-one correspondence. Further, as shown in FIG. 4B, on the surface of the support shaft 6 facing the carrier 2 (that is, the upper surface 6a), a second gas uniform flow path structure is further provided. The second gas uniform flow path structure communicates with the intake ends of the respective second adsorption holes 23, and the second gas uniform flow path structure communicates with the vacuum adsorption device. The second gas uniform flow path structure is used to achieve a gas uniform effect on the flowing gas. In some optional embodiments, the second gas uniform flow path structure includes at least one second arc-shaped flow path 62, and the second arc-shaped flow path 62 extends along the circumferential direction of the support shaft 6. As shown in FIG. 5, each second arc-shaped flow path 62 is provided corresponding to two of the second adsorption holes 23. The intake ends of the two second adsorption holes 23 communicate with both ends 62a of the second arc-shaped flow path 62 respectively. The second arc-shaped flow path 62 is provided with an intake port communicating with the vacuum adsorption device at the midpoint position. Taking the case where the number of the second adsorption holes 23 is four as an example, as shown in FIG. 4, two second adsorption holes 23 correspond to one second arc-shaped flow path 62, and there are a total of two second arc-shaped flow paths 62, and the two are symmetrically distributed with respect to the axis of the base 1. In this case, the second gas uniform flow path structure further includes a third arc-shaped flow path 63. The third arc-shaped flow path 63 extends along the circumferential direction of the support shaft 6, and both ends 63a of the third arc-shaped flow path 63 communicate with the two second arc-shaped flow paths 62 at the midpoint positions of the two second arc-shaped flow paths 62 respectively. The third arc-shaped flow path 63 communicates with the vacuum adsorption device at the midpoint position. The third arc-shaped flow path 63 can communicate with the vacuum adsorption device through, for example, a straight passage 64. The exhaust end 64a of the straight passage 64 is connected to the midpoint position of the third arc-shaped flow path 63, and the intake end 64b of the straight passage 64 communicates with the vacuum adsorption device.In this embodiment, there are a total of four second adsorption holes 23. In this case, two second arc-shaped channels 62 and one third arc-shaped channel 63 are provided corresponding to the four second adsorption holes 23. However, the embodiments of the present application are not limited thereto. In actual applications, based on the specific number of the second adsorption holes 23, the number and arrangement method of the second arc-shaped channels 62 and the third arc-shaped channel 63 can be set, and those skilled in the art can adjust the setting according to the actual situation. Also, if there is only one second arc-shaped channel 62, the third arc-shaped channel 63 can be omitted. By using the first arc-shaped channel 61, the second arc-shaped channel 62, and the third arc-shaped channel 63 in combination, not only can the separation between the vacuum adsorption gas channel and the edge purge gas channel be realized, but also the distribution of the purge air flow and the vacuum adsorption air flow can be made uniform.

[0049] In one embodiment of the present application, as shown in FIGS. 1 and 8, the stopping structure 3 includes an annular main body 33. On the inner peripheral wall of the annular main body 33, a covering 31 protruding toward the base 1 (for example, the base main body 14) is provided. By having a gap between the inner peripheral wall of the covering 31 and the outer peripheral wall of the base 1, an air blow channel 51 is formed. Specifically, the annular main body 33 can adopt a circular sleeve structure. At the top of the inner peripheral wall of the annular main body 33, the covering 31 may be integrally formed. The inner peripheral wall of the covering 31 surrounds the outer peripheral wall of the base 1 and has a gap therebetween. The gap is used to form an annular air blow channel 51. Since the diameter of the upper surface of the base 1 is smaller than the diameter of the wafer 100, the purge gas blown out from the air blow channel 51 can flow through the exposed areas on the bottom and side surfaces of the wafer 100. Moreover, since the air blow channel 51 is annular and is provided along the circumferential direction of the base 1, the purge gas can be blown out from the air blow channel 51 simultaneously in the circumferential direction, thereby realizing uniform purging of the bottom and side surfaces of the wafer 100. By adopting the above design, the embodiment of the present application not only has a simple structure, but also can greatly improve the yield of the placement device due to its simple structure, thereby further reducing the application and maintenance costs. It should be noted that the embodiment of the present application does not limit the specific embodiments of the covering 31 and the stopping structure 3. For example, the two may be of a separate structure and fixedly connected by welding. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings according to the actual situation by themselves.

[0050] In one embodiment of the present application, as shown in FIGS. 1 to 8, a mounting ring 11 protruding toward the inner peripheral wall of the annular main body 33 is provided on the outer peripheral wall of the base main body 14. In a region of the inner peripheral wall of the annular main body 33 located below the cover ring 31, a wrap ring 32 protruding toward the base main body 14 is further provided. The wrap ring 32 is laminated on the mounting ring 11 and has a gap between the wrap ring 32 and the outer peripheral wall of the base main body 14, thereby forming a first gas homogenization space 52. Specifically, the inner diameter of the wrap ring 32 is larger than the inner diameter of the cover ring 31. That is, both the cover ring 31 and the wrap ring 32 are integrally formed on the inner peripheral wall of the annular main body 33 to form a stepped structure. Further, the relative position between the wrap ring 32 and the mounting ring 11 can be regulated by a stopper structure. For example, the two can be fixed with pins. By adopting the above design, the embodiment of the present application can form the first gas homogenization space 52 using a simple structure, which is not only easy to process and manufacture, but also stabilizes the implementation structure of the present application and extends the service life. It should be noted that the embodiment of the present application does not limit the specific implementation form of the first gas homogenization space 52. For example, a groove is opened on the inner peripheral wall of the annular main body 33, or a groove is opened on the outer peripheral wall of the base main body 14, and the two grooves form the first gas homogenization space 52 alone or in combination with each other. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting according to the actual situation by themselves.

[0051] In one embodiment of the present application, as shown in FIGS. 1 to 8, a protruding gas restriction ring 12 is further provided between the placement ring 11 and the cover ring 31 on the outer peripheral wall of the base body 14. By having a gap between the gas restriction ring 12 and the cover ring 31, a gas restriction flow path 53 is formed, and the gas restriction flow path 53 is used to communicate the air blow flow path 51 and the first gas homogenization space 52. Specifically, the gas restriction ring 12 is further integrally formed on the outer peripheral wall of the base body 14. The gas restriction ring 12 may be located at the top of the placement ring 11, and the outer diameter is smaller than the outer diameter of the placement ring 11. That is, two-step steps are formed on the outer peripheral wall of the base body 14 from top to bottom. The upper surface of the gas restriction ring 12 and the upper surface of the placement ring 11 are respectively the step surfaces of the two-step steps, which simplifies the structure of the embodiment of the present application. Further, the inner peripheral wall of the wrap ring 32, the upper surface of the placement ring 11, the outer peripheral wall of the gas restriction ring 12, and the bottom surface of the cover ring 31 jointly fit to form the first gas homogenization space 52, and there is a gap for forming the gas restriction flow path 53 between the bottom surface of the cover ring 31 and the upper surface of the gas restriction ring 12. One end of the gas restriction flow path 53 communicates with the first gas homogenization space 52, and the other end communicates with the bottom of the air blow flow path 51. The gas restriction flow path 53 can perform gas restriction by increasing the pressure on the purge gas flowing out from the first gas homogenization space 52, thereby increasing the gas homogenization time in the first gas homogenization space 52 of the purge gas, improving the gas homogenization effect, thereby further improving the purge uniformity of the air blow flow path 51, and further improving the uniformity of the wafer and the process yield. It should be noted that the embodiment of the present application does not limit the specific implementation form of the gas restriction flow path 53. For example, a blocking structure may be provided at the communication location between the air blow flow path 51 and the first gas homogenization space 52 so as to increase the pressure in the first gas homogenization space 52, thereby improving the gas homogenization effect. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings according to the actual situation by themselves.

[0052] In one embodiment of the present application, as shown in FIG. 8, the ventilation cross-section of the gas restriction flow path 53 is smaller than that of the air blow flow path 51, and the ventilation cross-section of the air blow flow path 51 is smaller than that of the first gas homogenization space 52. Specifically, the ventilation cross-section of the gas restriction flow path 53 is smaller than that of the air blow flow path 51, and the ventilation cross-section of the air blow flow path 51 is smaller than that of the first gas homogenization space 52. Specifically, the ventilation cross-section is the cross-section in contact with the air flow direction, increasing the air flow pressure in the first gas homogenization space 52, thereby further improving the gas homogenization efficiency and the gas homogenization effect. Also, optionally, the ventilation cross-section of the connection flow path 15 may be made smaller than the ventilation cross-sections of the first gas homogenization space 52 and the second gas homogenization space 41 and larger than the ventilation cross-section of the gas restriction flow path 53. In this way, pressure increase and gas homogenization can be performed on the second gas homogenization space 41, and the air flow velocity can be increased, thereby improving the edge purge efficiency. When actually applied, the connection flow path 15 performs pressure increase and gas homogenization on the purge gas in the second gas homogenization space 41, and then the gas enters the first gas homogenization space 52 through the connection flow path 15. At this time, the gas restriction flow path 53 is used to perform pressure increase and gas homogenization on the purge gas in the first gas homogenization space 52. Finally, the bottom surface and the side surface of the wafer 100 are purged through the gas restriction flow path 53 and the air blow flow path 51. By using the first gas homogenization space 52, the second gas homogenization space 41, the connection flow path 15, and the gas restriction flow path 53 in combination, secondary pressure increase and gas homogenization can be realized, thereby further improving the uniformity of the purge gas, and further improving the uniformity of the wafer 100 and the process yield.

[0053] To further explain the beneficial effects of the first embodiment of the present application, the following conducts a simulation test on the specific embodiments of the present application with reference to FIGS. 9A to 9D. Specifically, as an example, two ventilation holes 22 and eight gas guiding channels 44 are selected to perform a simulation of the airflow field. As shown in FIG. 9A, the specific simulation results show that the purge gas enters each gas guiding channel 44 through each ventilation hole 22 at a high speed, and the gas is homogenized after reaching the second gas homogenization space 41. However, from the simulation results, the airflow distribution in the second gas homogenization space 41 is not completely uniform, that is, the airflow velocity at the exhaust port of the gas guiding channel 44 is large, the airflow velocity at a location away from the exhaust port of the gas guiding channel 44 is small, the difference in the flow velocity of different regions in the second gas homogenization space 41 is large, and it can be seen that the airflow is non-uniform. After the purge gas is homogenized through the second gas homogenization space 41, it enters the first gas homogenization space 52 after being gas-restricted and pressurized through each gas restriction hole in the connection channel 15. After reaching the first gas homogenization space 52, the second gas homogenization is performed. As shown in FIG. 9B, the simulation results of the airflow field in the first gas homogenization space 52 show that the difference in the airflow velocity in the first gas homogenization space 52 becomes small, and the airflow becomes relatively uniform. As a result, compared with the second gas homogenization space 41, the airflow uniformity in the first gas homogenization space 52 is improved, and the airflow becomes relatively uniform. After the purge gas performs the second gas restriction and pressurization through the gas restriction flow path 53, as shown in FIG. 9C, the simulation results of the airflow field of the gas restriction flow path 53 show that the airflow velocities in the gas restriction flow path 53 are substantially the same, the difference in the flow velocity is small, and the air blow becomes uniform, as shown in the black part of FIG. 9C. After the purge gas reaches the air blow flow path 51, as shown in FIG. 9D, the simulation results of the airflow field show that the airflow velocities in the air blow flow path 51 are substantially the same, so that the air blow flow path 51 blows air uniformly to the edge of the wafer.

[0054] In one embodiment of the present application, the base 1, the carrier 2, and the stopping structure 3 all adopt an aluminum nitride ceramic material. Specifically, BaseThe carrier 2 and the stopper structure 3 both adopt aluminum nitride ceramic materials. By doing so, the embodiments of the present application can achieve uniform purging of the edge of the wafer 100. The placement device has the advantages of high temperature resistance, low particle contamination, and significantly reduced metal contamination. Thereby, not only can the process yield of the wafer be improved, but also the process uniformity of the wafer can be significantly improved. However, the embodiments of the present application do not limit the specific materials of the above-mentioned components. For example, if the above requirements can be met, other types of ceramic materials may be adopted. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation by themselves.

[0055] Second Embodiment The placement device of the semiconductor process equipment according to the embodiments of the present application includes, similarly to the first embodiment, a base 1, a carrier 2, and a stopper structure 3. The structures and functions of these components are the same as those of the first embodiment. Hereinafter, only the differences between this embodiment and the first embodiment will be described in detail.

[0056] Specifically, as shown in FIG. 10, in this embodiment, a heating tube 13 for heating the wafer 100 is provided in the base 1, and the heating tube 13 may be provided corresponding to different regions of the base 1. For example, as shown in FIG. 10, there are two heating tubes 13, which are respectively provided corresponding to the central region and the edge region of the base 1, thereby realizing partition temperature control.

[0057] In one embodiment of the present application, as shown in FIG. 11, a gas guide groove 311 is provided at the connection portion between the upper surface and the inner peripheral surface of the covering 31. The gas guide groove 311 is annular and is provided circumferentially along the circumferential direction of the covering 31. The bottom surface of the gas guide groove 311 is lower than the upper surface of the base 1 (for example, the base body 14), and the diameter of the circumferential side surface of the gas guide groove 311 is larger than the diameter of the wafer 100. The gas guide groove 311 communicates with the air blow channel 51 so as to guide the purge gas blown out from the air blow channel 51 to the bottom surface and the side surface of the wafer 100. Specifically, the gas guide groove 311 is opened at a location close to the inner peripheral wall of the covering 31. For example, an open groove for forming the gas guide groove 311 is opened between the upper surface and the inner peripheral wall of the covering 31. Further, the upper surface of the covering 31 is provided flush with the upper surface of the base 1, and the bottom surface of the gas guide groove 311 is lower than the upper surface of the base 1. That is, when the wafer 100 is placed on the upper surface of the base 1, the wafer 100 can be restricted inside by the gas guide groove 311, and a guide gap is formed between it and the bottom surface and the side surface of the wafer 100. When the purge gas in the air blow channel 51 is purged onto the bottom surface of the wafer 100, the purge gas can be guided to the side surface of the wafer 100 by the action of the gas guide groove 311, thereby preventing the formation of back plating and side plating, that is, preventing the deposition of a thin film on the bottom surface and the side surface of the wafer 100, and further improving the yield of the wafer 100. By adopting the above design, not only can the airflow field be made more uniform, but also the edge air blow of the wafer 100 can be made more uniform, thereby further improving the uniformity of the wafer 100 and improving the process yield. It should be noted that the embodiment of the present application is not limited to necessarily including the gas guide groove 311. For example, since the upper surface of the covering 31 is lower than the upper surface of the base 1, there is a gap between the covering 31 and the bottom surface of the wafer 100, thereby realizing a function similar to that of the gas guide groove 311. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings according to the actual situation by themselves.

[0058] In the embodiment of the present application, as shown in FIG. 11, a positioning structure is provided between two mutually laminated surfaces of the wrapping ring 32 and the placement ring 11. The positioning structure includes a positioning convex portion and a positioning concave portion, and the two are fitted to regulate the relative positions of the wrapping ring 32 and the placement ring 11, thereby realizing the positioning of the stopper ring structure 3 and the base 1. Specifically, the positioning convex portion is, for example, a positioning bump 321 protruding from the bottom surface of the wrapping ring 32, and the positioning concave portion is, for example, a positioning groove 111 formed on the upper surface of the placement ring 11. The positioning bump 321 is fitted into the positioning groove 111 so as to regulate the relative position between the stopper ring structure 3 and the base 1.

[0059] Optionally, there are a plurality of the positioning convex portions, for example, three, and the plurality of positioning convex portions are evenly and spaced along the circumferential direction of the placement ring 11. The number of the positioning concave portions is the same as that of the positioning convex portions, and they are provided in a one-to-one correspondence. By adopting the above design, not only can the stability between the stopper ring structure 3 and the base 1 be improved, but also the processing difficulty can be reduced, thereby extending the service life and significantly reducing the attachment / detachment maintenance cost. It should be noted that the embodiment of the present application does not limit the specific implementation form of the positioning structure, and those skilled in the art can adjust the setting according to the actual situation.

[0060] In the embodiment of the present application, as shown in FIGS. 11 and 13, each gas restriction hole in the connection flow path 15 is a straight through hole. However, the embodiment of the present application is not limited thereto. For example, as shown in FIG. 12, each gas restriction hole in the connection flow path 15 includes a first straight through hole 151 and a second straight through hole 152 sequentially provided in the vertical direction. The first straight through hole 151 is located above the second straight through hole 152, and the diameter of the first straight through hole 151 is smaller than the diameter of the second straight through hole 152. The diameter of the first straight through hole 151 closer to the top of the placement ring 11 is smaller than the diameter of the second straight through hole 152 closer to the bottom of the placement ring 11. That is, since the connection flow path 15 adopts a different diameter structure, the first straight through hole 151 with a smaller diameter can further reduce the flow rate of the purge gas, further improve the pressure and gas homogenization effect in the second gas homogenization space 41 of the purge gas, thereby further improving the uniformity of the edge purge.

[0061] It should be noted that the embodiment of the present application does not limit the specific structure of each gas restriction hole in the connection flow path 15. For example, the gas restriction hole may be a multi-stage stepped hole or a tapered hole so as to perform gas restriction by increasing the pressure on the second gas homogenization space 41. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting according to the actual situation by themselves.

[0062] In one embodiment of the present application, as shown in FIGS. 11 and 14, each vent hole 22 is provided through the carrier 2. For example, two vent holes 22 may be opened at the middle position of the carrier 2, and each vent hole 22 may be linearly communicated with the second gas homogenization space 41 through three gas guiding flow paths 44. One end of the three gas guiding flow paths 44 is communicated with the vent hole 22, and the other end is communicated with the second gas homogenization space 41. Moreover, the gas guiding flow path 44 adopts a form of linear communication for the vent hole 22It may also be configured to communicate with the second gas homogenization space 41. By adopting the above design, since all of the plurality of ventilation holes 22 communicate with the second gas homogenization space 41 via the plurality of gas guide channels 44, the path of the purge gas is short, the uniformity is relatively favorable, and thereby, not only can the flow rate of the purge gas be improved, but also the application and maintenance costs implemented in the present application can be significantly improved. It should be noted that the embodiments of the present application do not limit the number and positions of the ventilation holes 22 and the gas guide channels 44, and those skilled in the art can adjust the settings according to the actual situation by themselves.

[0063] In one embodiment of the present application, as shown in FIG. 15, one ventilation hole 22 may be installed on one side of the central position of the carrier 2. One end of each of the three gas guide channels 44 communicates with the ventilation hole 22, and the other end of each of the three gas guide channels 44 communicates with the second gas homogenization space 41 and is arranged at intervals along the circumferential direction. Since the carrier 2 is made of a ceramic material, the number of ventilation holes 22 is reduced, and the yield of the carrier 2 can be further improved, thereby further reducing the application and maintenance costs of the embodiments of the present application.

[0064] In the embodiment of the present application, as shown in FIG. 14, an annular groove and a plurality of linear grooves are formed on the surface facing the base 1 of the carrier 2 (i.e., the upper surface), and the annular groove is fitted to the surface facing the carrier 2 of the base 1 (i.e., the bottom surface) to form the second gas homogenization space 41, and each linear groove is fitted to the surface facing the carrier 2 of the base 1 (i.e., the bottom surface) to form the gas guide channel 44. Specifically, an annular groove may be formed on the surface facing the base 1 of the carrier 2 (i.e., the upper surface), and the annular groove is provided coaxially with the carrier 2 and is provided close to the edge of the carrier 2. When the carrier 2 is stacked on the bottom of the base 1, the annular groove and the surface facing the carrier 2 of the base 1 (i.e., the bottom surface) are fitted to each other to form the second gas homogenization space 41. By adopting this design, the structure of the embodiment of the present application is simple and easy to process and manufacture, thereby greatly reducing the application and maintenance costs. Further, a plurality of linear grooves are further provided on the surface facing the base 1 of the carrier 2 (i.e., the upper surface), and the linear grooves are located between the ventilation holes 22 and the annular groove. The linear grooves are fitted to the surface facing the carrier 2 of the base 1 (i.e., the bottom surface) to form a plurality of gas guide channels 44, and are used to communicate the ventilation holes 22 and the second gas homogenization space 41. By adopting this design, the embodiment of the present application is easy to process and manufacture, thereby greatly reducing the application and maintenance costs. However, the embodiment of the present application does not limit the specific structures of the second gas homogenization space 41 and the gas guide channel 44. For example, both the annular groove and the linear groove may be formed on the surface facing the carrier 2 of the base 1 (i.e., the bottom surface), or annular grooves and linear grooves are formed on both the surface facing the carrier 2 of the base 1 (i.e., the bottom surface) and the surface facing the base 1 of the carrier 2 (i.e., the upper surface). Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

[0065] To further illustrate the beneficial effects of the embodiments of the present application, the following conducts a simulation test on the specific embodiments of the present application with reference to FIGS. 16A to 16D. Specifically, as an example, two vent holes 22 and six gas guiding channels 44 are selected to perform a simulation of the airflow field. As shown in FIG. 16A, the specific simulation results show that the purge gas enters the gas guiding channel 44 through the vent hole 22 at a high speed and is gas-uniformized after reaching the second gas uniformizing space 41. However, from the simulation results, the airflow distribution in the second gas uniformizing space 41 is not completely uniform, that is, the airflow velocity at the exhaust port of the gas guiding channel 44 is large, the airflow velocity at a location away from the exhaust port of the gas guiding channel 44 is small, the difference in flow velocity in different regions of the second gas uniformizing space 41 is large, and the airflow is non-uniform. After the purge gas is uniformized through the second gas uniformizing space 41, it enters the first gas uniformizing space 52 after being gas-restricted and pressurized through each gas restriction hole in the connection channel 15, reaches the first gas uniformizing space 52 to perform a second gas uniformizing. As shown in FIG. 16B, the simulation results of the airflow field in the first gas uniformizing space 52 show that the difference in airflow velocity in the first gas uniformizing space 52 becomes small and the airflow becomes relatively uniform. Thereby, compared with the second gas uniformizing space 41, the airflow uniformity in the first gas uniformizing space 52 is improved and the airflow becomes relatively uniform. After the purge gas performs a second gas restriction and pressurization through the gas restriction flow path 53, as shown in FIG. 16C, the simulation results of the airflow field of the gas restriction flow path 53 show that the airflow velocities in the gas restriction flow path 53 are substantially the same, the difference in flow velocity is small, and the air blow is uniform, as shown in the black part of FIG. 16C. After the purge gas reaches the air blow channel 51, as shown in FIG. 16D, the simulation results of the airflow field show that the airflow velocities in the air blow channel 51 are substantially the same, so that the air blow channel 51 uniformly air blows the edge of the wafer.

[0066] To sum up, in the placement device according to the embodiment of the present application, a stopper structure is embedded on the outer periphery of the base, an air blow channel and a first gas uniformizing space are formed between the inner peripheral wall of the stopper structure and the outer peripheral wall of the base, and a gas flow path structure is formed between the base and the carrier. The gas flow path structure is in the baseConnection flow path It is used to transport purge gas to the first gas homogenization space through it. The first gas homogenization space is used to homogenize the purge gas. After being homogenized, the purge gas is blown out through the air blow channel, thereby purging the bottom surface and side surface of the wafer. By using the first gas homogenization space to homogenize the purge gas, the gas can be blown out uniformly from the air blow channel, thereby ensuring that the influence on the airflow fields of the bottom surface and side surface of the wafer by edge air blow is the same. Furthermore, the consistency of process film formation is greatly improved, and the process yield is greatly improved. Also, both the air blow channel and the first gas homogenization space are formed between the base and the stopper structure, and the gas flow channel structure is formed between the base and the carrier, so the structure is simple and easy to process and manufacture, thereby greatly reducing the application and manufacturing costs.

[0067] Based on the same inventive concept, the embodiments of the present application provide a semiconductor process device, including a process chamber and the placement device according to each of the above embodiments. For example, as shown in FIG. 4A, the placement device (including but not limited to base 1 and carrier 2) is provided in the process chamber 7 and is used to place the wafer.

[0068] The semiconductor process device according to the embodiments of the present application can not only reduce the manufacturing cost by adopting the above placement device according to the embodiments of the present application, but also improve the consistency of process film formation, thereby greatly improving the process yield.

[0069] As can be understood, the above embodiments are only exemplary embodiments adopted to explain the principle of the present invention, but the present invention is not limited thereto. Those skilled in the art can make various modifications and improvements without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as within the protection scope of the present invention.

[0070] In the description of the present application, the orientation or positional relationship indicated by terms such as "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is for facilitating or simplifying the description of the present invention, and does not indicate or imply that the relevant device or element has a specific orientation or is configured and operated in a specific orientation, and should not be understood as limiting the present invention.

[0071] The terms "first" and "second" are merely used for the purpose of description, and do not indicate or imply relative importance or imply the number of the indicated technical features. It should be understood that the features limited by "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specifically described, the meaning of "a plurality" is two or more.

[0072] In the description of the present application, unless there are specific and clear regulations and limitations, the terms "attachment", "connection", and "connection" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection, and may be a direct connection or an indirect connection through an intermediate medium, or may be an internal communication between two elements. A person skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific situation.

[0073] In the description of this specification, specific features, structures, materials, or characteristics can be combined in a suitable manner in any one or more embodiments or exemplifications.

[0074] The above are only some embodiments of the present application. It should be noted that those skilled in the art can make some improvements and modifications without departing from the principle of the present application, and these improvements and modifications should also be regarded as within the protection scope of the present application.

Claims

1. A mounting device for a semiconductor process equipment provided in a process chamber of the semiconductor process equipment, comprising a base, a carrier, and a stopping structure, wherein the upper surface of the base is used for mounting a wafer, the stopping structure is fitted on the outer periphery of the base and is used for restricting the position of the wafer, and an air blow channel and a first gas homogenization space are formed between the inner peripheral wall of the stopping structure and the outer peripheral wall of the base, the first gas homogenization space communicates with the air blow channel, the carrier and the base are stacked on each other, the carrier is located below the base, and a gas channel structure is provided between the carrier and the base, a connection channel is provided on the base, and the gas channel structure communicates with the first gas homogenization space through the connection channel, the gas channel structure is used for transporting a purge gas to the first gas homogenization space through the connection channel, the first gas homogenization space is used for homogenizing the flowing purge gas, and the air blow channel is for blowing out the homogenized purge gas to purge the bottom surface and the side surface of the wafer, the gas channel structure includes a gas guiding channel structure and a second gas homogenization space, the gas guiding channel structure communicates with the second gas homogenization space, and the second gas homogenization space communicates with the first gas homogenization space through the connection channel, the gas guiding channel structure is used for transporting the purge gas to the second gas homogenization space, and the second gas homogenization space is used for homogenizing the flowing purge gas. The mounting device is characterized in that.

2. The mounting device according to claim 1, wherein the volume of the second gas homogenization space is larger than the volume of the first gas homogenization space, and / or the ventilation cross-section of the connection channel is smaller than the ventilation cross-sections of the first gas homogenization space and the second gas homogenization space.

3. The mounting device according to claim 1, wherein the connection channel includes gas restriction holes penetrating through a plurality of the bases, and the plurality of gas restriction holes are evenly arranged along the circumferential direction of the base, and both ends of each gas restriction hole communicate with the first gas homogenization space and the second gas homogenization space respectively.

4. Each of the gas restriction holes includes a first straight through hole and a second straight through hole that are sequentially provided in the vertical direction, the first straight through hole is located above the second straight through hole, and the diameter of the first straight through hole is smaller than the diameter of the second straight through hole. The placing device according to claim 3, characterized in that.

5. The gas guiding channel structure includes at least one gas guiding channel and a vent hole penetrating at least one of the carriers. Each of the vent holes communicates with the intake end of at least one of the gas guiding channels, and the vent holes are used to communicate with a purge gas source. The exhaust ends of the gas guiding channels are evenly provided at intervals along the circumferential direction of the second gas homogenization space, and all communicate with the second gas homogenization space. The placing device according to claim 1, characterized in that.

6. An annular groove and a plurality of straight grooves are formed on one of the surface of the carrier facing the base and the surface of the base facing the carrier. The other of the surface of the carrier facing the base and the surface of the base facing the carrier is fitted into the annular groove to form the second gas homogenization space, and is fitted into each of the straight grooves to form the gas guiding channel, or An annular groove and a plurality of straight grooves are formed on both the surface of the carrier facing the base and the surface of the base facing the carrier. By fitting the carrier corresponding to the annular groove on the base, the second gas homogenization space is formed. By fitting the carrier corresponding to the plurality of straight grooves on the base, the gas guiding channel is formed. The placing device according to claim 5, characterized in that.

7. The placing device further includes a support shaft. The support shaft is located below the carrier and is used to support the carrier. A first gas homogenization channel structure is provided on the surface of the support shaft facing the carrier. The first gas homogenization channel structure communicates with the intake end of each of the vent holes and communicates with a purge gas source. The placing device according to claim 5, characterized in that.

8. The first gas homogenization channel structure includes at least one first arc-shaped channel, and the first arc-shaped channel extends along the circumferential direction of the support shaft. Each of the first arc-shaped channels is provided corresponding to two of the vent holes. The intake ends of the two vent holes communicate with both ends of the first arc-shaped channel respectively. The first arc-shaped channel is provided with an intake port communicating with the purge gas source at the midpoint position. The placement device according to claim 7, characterized in that.

9. The base is further provided with a plurality of first adsorption holes penetrating the base, and the plurality of first adsorption holes are evenly distributed along the circumferential direction of the base. The carrier is further provided with a plurality of second adsorption holes penetrating the carrier. The number of the second adsorption holes is the same as that of the first adsorption holes, and they are provided corresponding to each other one by one. On the surface of the support shaft facing the carrier, a second gas homogenization channel structure is further provided. The second gas homogenization channel structure communicates corresponding to the intake ends of each of the second adsorption holes, and the second gas homogenization channel structure communicates with a vacuum adsorption device. The placement device according to claim 7, characterized in that.

10. The second gas homogenization channel structure includes at least one second arc-shaped channel, and the second arc-shaped channel extends along the circumferential direction of the support shaft. Each of the second arc-shaped channels is provided corresponding to two of the second adsorption holes. The intake ends of the two second adsorption holes communicate with both ends of the second arc-shaped channel respectively. The second arc-shaped channel is provided with an intake port communicating with the vacuum adsorption device at the midpoint position. The placement device according to claim 9, characterized in that.

11. There are two second arc-shaped channels, and they are symmetrically distributed with respect to the axis of the support shaft. The second gas homogenization channel structure further includes a third arc-shaped channel. The third arc-shaped channel extends along the circumferential direction of the support shaft, and both ends of the third arc-shaped channel communicate with the two second arc-shaped channels at the midpoint positions of the two second arc-shaped channels respectively. The third arc-shaped channel communicates with the vacuum adsorption device at the midpoint position. The placement device according to claim 10, characterized in that.

12. The stopper structure includes an annular body, and a cover ring protruding to the outer peripheral wall of the base is provided on the inner peripheral wall of the annular body. A gap is provided between the inner peripheral wall of the cover ring and the outer peripheral wall of the base, thereby forming the air blow channel. The placing device according to claim 1, characterized in that.

13. A gas guide groove is provided at the connection position between the upper surface and the inner peripheral surface of the cover ring. The gas guide groove is annular and is provided circumferentially along the circumferential direction of the cover ring. The bottom surface of the gas guide groove is lower than the upper surface of the base, and the diameter of the circumferential side surface of the gas guide groove is larger than the diameter of the wafer. The gas guide groove communicates with the air blow channel so as to guide the purge gas blown out from the air blow channel to the bottom surface and the side surface of the wafer. The placing device according to claim 12, characterized in that.

14. The base includes a base body, and a placing ring protruding to the inner peripheral wall of the annular body is provided on the outer peripheral wall of the base body. A wrap ring protruding to the base body is further provided in a region of the inner peripheral wall of the annular body located below the cover ring. The wrap ring is laminated on the placing ring, and a gap is provided between the wrap ring and the outer peripheral wall of the base body, thereby forming the first gas homogenization space. The placing device according to claim 12, characterized in that.

15. A positioning structure is provided between two surfaces of the wrap ring and the placing ring that are laminated on each other. The positioning structure includes a positioning convex portion and a positioning concave portion. The positioning convex portion is fitted into the positioning concave portion so as to regulate the relative position of the wrap ring and the placing ring. The placing device according to claim 14, characterized in that.

16. A protruding gas restriction ring is provided between the placing ring and the cover ring on the outer peripheral wall of the base body. A gap is provided between the gas restriction ring and the cover ring to form a gas restriction channel. The gas restriction channel is used to communicate the air blow channel and the first gas homogenization space. The placing device according to claim 14, characterized in that.

17. The ventilation cross-section of the gas restriction channel is smaller than the ventilation cross-section of the air blow channel, and the ventilation cross-section of the air blow channel is smaller than the ventilation cross-section of the first gas homogenization space. The mounting device according to claim 16, characterized in that the ventilation cross-section of the connection flow path is larger than the ventilation cross-section of the gas restriction flow path.

18. The mounting device according to claim 1, characterized in that the base, the carrier, and the stopping structure are all made of aluminum nitride ceramic material.

19. A semiconductor processing apparatus including a process chamber and the mounting device according to any one of claims 1 to 18, wherein the mounting device is provided in the process chamber.

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