Method for manufacturing a substrate member, method for manufacturing a light-emitting device, substrate member, and light-emitting device

Abstract

The present invention provides a method for manufacturing a base member in which an insulation film, constituted by an insulation film in a desired location, can be easily and selectively removed. A method for manufacturing a base includes: a preparation step for preparing a structure that includes a base having a first surface and a second surface opposite the first surface, an electrode disposed on the first surface of the base, and an insulation film covering the first surface, the second surface, and the electrode; and an electrode exposing step for irradiating the insulation film on the electrode with laser light to expose the electrode through the insulation film.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a substrate member, a method for manufacturing a light-emitting device, a substrate member, and a light-emitting device.

Background Art

[0002] Patent Document 1 discloses, for example, a light-emitting device including an LED chip on a mounting substrate on which a wiring layer (wiring electrode) is formed. In Patent Document 1, the mounting substrate is made of, for example, ceramic. In the light-emitting device configured in this way, in general, in order to protect the wiring electrodes and the electrodes of the LED chip, the wiring electrodes other than the connection portions are protected by an insulating film. In the light-emitting device of Patent Document 1, the wiring electrodes other than the connection portions are protected by an ALD film formed by an atomic layer deposition method (Atomic Layer Deposition method; ALD method) integrally formed with the surface of the LED chip or the like. Further, Patent Document 1 discloses removing the insulating film by polishing.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, it is not always easy to selectively remove the insulating film at a desired position by polishing. Therefore, an object of the present disclosure is to provide a method for manufacturing a substrate member, a method for manufacturing a light-emitting device, a substrate member, and a light-emitting device that can easily and selectively remove an insulating film at a desired position.

Means for Solving the Problems

[0005] One manufacturing method of a substrate member according to the present disclosure includes a preparation step of preparing a structure including a substrate having a first surface and a second surface opposite to the first surface, an electrode disposed on the first surface of the substrate, and an insulating film covering the first surface, the second surface, and the electrode of the substrate, and an electrode exposure step of irradiating a laser beam onto the insulating film on the electrode to expose the electrode from the insulating film.

[0006] Another manufacturing method of a substrate member according to the present disclosure includes a preparation step of preparing a structure including a ceramic body that forms a substrate and contains a metal element as a constituent element, an electrode disposed on a first surface of the ceramic body, and an insulating film covering the first surface and the electrode, and an electrode exposure step of irradiating a laser beam that passes through the insulating film and is absorbed by the electrode from above the insulating film to remove a part of the electrode so that the ceramic body directly under the electrode is not exposed from the electrode, thereby exposing the electrode from the insulating film.

[0007] One substrate member according to the present disclosure is a substrate member including a substrate having a first surface and a second surface opposite to the first surface, a pad portion, and a lead-out portion electrically connected to the pad portion, and including an electrode disposed on the first surface of the substrate and an insulating film covering the lead-out portion, wherein at least a part of the pad portion is exposed from the insulating film, and the surface roughness of the pad portion in the exposed portion is greater than the surface roughness of the lead-out portion.

[0008] Another substrate member according to the present disclosure is a substrate member including a substrate having a first surface and a second surface opposite to the first surface, a pad portion, and a lead-out portion electrically connected to the pad portion, and including an electrode disposed on the first surface of the substrate and an insulating film covering the lead-out portion, wherein a part of the pad portion is exposed from the insulating film, and the surface roughness of the pad portion in the exposed portion is greater than the surface roughness of the pad portion covered with the insulating film.

[0009] One light-emitting device according to the present disclosure includes the substrate member and a light-emitting element provided in a mounting region.

[0010] Another light-emitting device according to the present disclosure is a light-emitting device including a substrate member provided with the frame body and a light-emitting element provided in a mounting region, further including a sealing member that seals a region surrounded by the frame body.

Effect of the Invention

[0011] The present disclosure configured as described above provides a method for manufacturing a substrate member, a method for manufacturing a light-emitting device, a substrate member, and a light-emitting device that can easily and selectively remove an insulating film at a desired position.

Brief Description of the Drawings

[0012]

Figure 1A

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Figure 1C

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Figure 3C

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Figure 9G

Modes for Carrying Out the Invention

[0013] In the description of the following embodiments, the drawings referred to are schematic representations of the present disclosure. Therefore, the scale, spacing, positional relationship, etc. of each member may be exaggerated, or a part of the member may be omitted. Also, the scales and spacings of the members may not match. In the following description, the same names and reference numerals generally denote the same or similar members, and detailed descriptions will be omitted as appropriate. In the configuration of the wiring board, "upper", "lower", "left", and "right" may be interchanged depending on the situation. In this specification, "upper", "lower", etc. indicate the relative positions between components in the drawings referred to for the purpose of explanation, and are not intended to indicate absolute positions unless otherwise specified. Hereinafter, embodiments according to the present disclosure will be described. Embodiment 1 The manufacturing method of the base member (ceramic member) of Embodiment 1 is based on the findings independently obtained by the following inventor. Specifically, the inventor tried to irradiate the insulating film with laser light in order to easily and selectively remove the insulating film at a desired position, and remove the insulating film at the position irradiated with the laser light. (Hereinafter, also referred to as laser ablation.) However, it was found that when trying to remove the insulating film formed on the ceramic body containing a metal element in the constituent elements by laser ablation, the ceramic body can be made conductive by laser irradiation. It is considered that the reason for the ceramic body to become conductive is that the laser light transmitted through the insulating film is irradiated on the ceramic body. On the other hand, the insulating film of the same material formed on the electrode was removed by laser ablation. Therefore, as a result of further investigation, it was found that when the insulating film formed on the electrode is such that even if it transmits laser light, the electrode arranged behind the insulating film that transmits the laser light absorbs the laser light, for example, the vicinity of the surface which is a part of the electrode is scraped by the irradiation of the laser light, and the insulating film is removed together with the scraped electrode. Hereinafter, the "electrode" includes a metal material and has conductivity. For the sake of convenience in explaining the structure, it may also be expressed as an element electrode, an external connection electrode, an element connection electrode, etc.

[0014] The manufacturing method of the ceramic member (substrate member) according to Embodiment 1 is based on the above findings independently obtained by the present inventor, and includes a ceramic body containing a metal element in its constituent elements, an electrode disposed on the first surface of the ceramic body, and an insulating film covering the first surface and the electrode. A preparation step of preparing a ceramic structure, and a laser beam that passes through the insulating film and is absorbed by the electrode is irradiated from above the insulating film, and a part of the electrode is removed so that the ceramic body directly below the electrode is not exposed from the electrode. An electrode exposure step of exposing the electrode from the surface of the insulating film.

[0015] The manufacturing method of the ceramic member according to Embodiment 1 will be described with reference to FIGS. 1A to 1C. In the preparation step, the ceramic body 3 is, for example, as follows. The ceramic body 3 contains a metal element in its constituent elements. Examples of the metal element include aluminum. Examples of the material of the ceramic body containing aluminum include aluminum nitride or aluminum oxide. As shown in FIGS. 1A and 1B, in the preparation step, a ceramic structure 4 including a ceramic body, electrodes (external connection electrodes 12a and 12b) provided on the first surface of the ceramic body, and an insulating film 30 covering the first surface and the electrodes of the ceramic body is prepared. It is preferable that at least the surface of this electrode contains gold, which makes it possible to easily remove the insulating film 30 on the electrode by laser ablation in the electrode exposure step. The insulating film 30 contains, for example, at least one selected from the group consisting of silicon oxide, aluminum oxide, niobium oxide, tantalum oxide, aluminum nitride, silicon nitride, and silicon oxynitride. The insulating film 30 is formed, for example, by atomic layer deposition. Further, the insulating film 30 may be a single-layer film or a multilayer film, but a multilayer film is preferred. By the insulating film 30 being a multilayer film, the gas barrier property of the insulating film 30 is improved. Also, the insulating film 30 can be used as an optical functional film such as an antireflection film.

[0016] FIG. 1B is a cross-sectional view taken along line IB - IB of FIG. 1A. Further, FIG. 1C shows a cross-sectional view of the ceramic member of Embodiment 1 according to the present disclosure. That is, it shows a schematic view of a state after a part of the electrode of the ceramic structure 4 is removed by laser ablation and the electrode is exposed from the insulating film 30. The peak wavelength of the laser light irradiated in the electrode exposure step is set so as to pass through the insulating film 30 and be absorbed by the electrode provided under the insulating film 30. For example, it can be set in the range of 250 nm or more and 550 nm or less. Here, the laser device (equipment) used for laser ablation tends to have a lower equipment cost for visible light than for ultraviolet light, and among visible light, green light has a lower cost than blue light. Therefore, it is preferable to use laser light with a longer wavelength within the range where laser ablation is possible within the above peak wavelength range. Specifically, it is preferable to use laser light with a peak wavelength in the range of 260 nm or more and 540 nm or less, more preferably, laser light with a peak wavelength in the range of 400 nm or more and 535 nm or less. Particularly preferably, it is laser light with a peak wavelength of 500 nm or more and 535 nm or less. The laser irradiation device that emits laser light with a peak wavelength in the above range is less expensive than a laser irradiation device using ultraviolet light, and can reduce the manufacturing equipment cost. Also, it is less expensive compared to a device for performing patterning using a photoresist and wet cleaning, which are examples of other methods for forming the insulating film 30, and can reduce the manufacturing equipment cost. Note that the peak wavelength of the laser light is appropriately adjusted and set within the above range in consideration of the material of the insulating film and the material of the electrode.

[0017] In the electrode exposure process, the intensity of the laser light to be irradiated is set such that a part of the electrode, for example, a part of the electrode near the interface between the insulating film 30 and the electrode is removed so that the ceramic body 3 directly under the electrode is not exposed from the electrode. For example, the intensity of the laser light is set such that the thickness of the electrode material to be removed on the electrode surface is in the range of 0.5 nm or more and 500 nm or less. Also, when setting the intensity of the laser light to be irradiated, it is preferably set such that the thickness of the electrode material to be removed on the electrode surface is 200 nm or less.

[0018] Also, the irradiation spot diameter of the laser light to be irradiated is set, for example, in the range of 15 μm or more and 60 μm or less, preferably in the range of 15 μm or more and 30 μm or less. When the irradiation spot diameter is set within such a range, it is possible to suppress a decrease in the flatness of the electrode surface due to laser ablation. The energy distribution of the laser light is not necessarily uniform with respect to the irradiation spot. Therefore, when the irradiation spot diameter of the laser light is large, the non-uniformity of the energy distribution within the irradiation spot diameter is reflected in the surface roughness of the electrode, and the flatness of the electrode surface decreases. Also, if the energy distribution of the laser light within the irradiation spot diameter is the same regardless of the size of the irradiation spot diameter, the variation in the processing depth within the irradiation spot diameter is smaller when the irradiation spot diameter is smaller. Therefore, by setting the spot diameter within the above range, it is possible to suppress a decrease in the flatness of the electrode surface due to laser ablation. Also, by irradiating the laser light while partially overlapping the irradiation spots of the laser light, the insulating film on the electrode surface can be efficiently removed. Examples of the overlapping range include 2 / 3 or less, 1 / 2 or less, 1 / 3 or less, 1 / 4 or less, 1 / 5 or less with respect to the area of the laser spot.

[0019] The laser light irradiated in the electrode exposure process is preferably a pulsed laser, and the pulse energy of the laser light is, for example, 1 μJ or more and 1000 J or less, preferably 2 μJ or more and 300 μJ or less, more preferably 3 μJ or more and 100 μJ or less, and even more preferably 3 μJ or more and 10 μJ or less. The pulse width of the laser light is set, for example, in the range of 100 femtoseconds or more and 2000 femtoseconds or less, preferably in the range of 100 femtoseconds or more and 1000 femtoseconds or less, and even more preferably in the range of 100 femtoseconds or more and 500 femtoseconds or less. By using such a pulsed laser, it is possible to suppress the conductivity of the ceramic body while removing the insulating film on the electrode.

[0020] When a pulsed laser is used in the electrode exposure process, it is preferable to scan the laser so that a part of the irradiation region of the laser light overlaps. When a pulsed laser is used, the thermal influence by the laser light can be reduced, and the insulating film can be removed while maintaining the electrode structure.

[0021] Since the removal of the insulating film by laser ablation as described above is a dry method, a drying process is not required. Also, the change in the resistance value is relatively small when compared before forming the insulating film and after laser ablation, and the wettability of the solder on the electrode is good.

[0022] In addition, the pulse energy and pulse width of the laser light irradiated in the electrode exposure process are set in consideration of the material of the insulating film, the material of the electrode, the thickness of the insulating film, the thickness of the electrode, the spot diameter of the laser light, etc. For example, when the insulating film is made of aluminum oxide (e.g., Al2O3) with a thickness of 400 nm and the electrode is made of Au plating with a thickness of 1 μm, the pulse energy and pulse width of the laser light to be irradiated are in the range of 1 μJ or more and 1000 μJ or less and 100 femtoseconds or more and 2000 femtoseconds or less, preferably in the range of 3 μJ or more and 100 μJ or less and 100 femtoseconds or more and 1000 femtoseconds or less, and even more preferably in the range of 3 μJ or more and 10 μJ or less and 100 femtoseconds or more and 500 femtoseconds or less.

[0023] Hereinafter, a method for manufacturing a light-emitting device including the above-described method for manufacturing a ceramic member and a light-emitting device manufactured by the manufacturing method will be described.

[0024] Embodiment 2 As shown in FIGS. 2A to 2C, the light-emitting device 100 according to Embodiment 2 includes a mounting substrate 10 and a light-emitting element 1 mounted on the mounting substrate 10. As shown in FIG. 2C, the mounting substrate 10 includes a substrate 11, element connection electrodes 13a and 13b formed on the upper surface of the substrate 11, and external connection electrodes 12a and 12b formed on the lower surface of the substrate 11. The element connection electrodes 13a and 13b and the external connection electrodes 12a and 12b are connected by through electrodes 14a and 14b formed in through holes of the substrate 11, respectively. The light-emitting element 1 is, for example, a flip-chip type light-emitting element having two element electrodes 1a and 1b with different polarities on an electrode formation surface opposite to the light-emitting surface, and the element electrodes 1a and 1b are connected to the element connection electrodes 13a and 13b. Then, in the light-emitting device 100 according to Embodiment 2, all outer surfaces including the surface of the light-emitting element 1, except for the surfaces of the external connection electrodes 12a and 12b connected to external wirings, are covered with an insulating film 30 formed by, for example, the atomic layer deposition method described later.

[0025] According to the light-emitting device 100 of Embodiment 2 configured as described above, for example, a highly reliable light-emitting device excellent in moisture resistance and the like can be provided without providing a sealing member that covers the light-emitting element.

[0026] Method for manufacturing a light-emitting device according to Embodiment 2 The method for manufacturing a light-emitting device according to Embodiment 2 includes a step of mounting a light-emitting element in the preparation step in the method for manufacturing a ceramic member according to Embodiment 1. Specifically, after forming external connection electrodes on the lower surface of a substrate, which is a ceramic body containing a metal, and forming element connection electrodes on the upper surface to which the element electrodes of the light-emitting element are connected, the light-emitting element is mounted. Then, an insulating film is formed on the entire surface including the surface of the light-emitting element and the surface of the substrate, thereby preparing a light-emitting device structure including a ceramic member. That is, in the manufacturing method of the light-emitting device according to Embodiment 2, the preparation process includes 1-1. a mounting substrate preparation process, 1-2. a light-emitting element mounting process, and 1-3. an insulating film forming process. Hereinafter, the manufacturing method of the light-emitting device according to Embodiment 2 will be described in more detail. In the following description, a substrate including external connection electrodes and element connection electrodes is referred to as a mounting substrate (ceramic member), and the portion excluding the external connection electrodes and the element connection electrodes is simply referred to as a substrate (ceramic body).

[0027] 1-1. Mounting Substrate Preparation Process Here, first, a mounting substrate shown in FIG. 3A is prepared. Specifically, external connection electrodes 12a and 12b are formed on the lower surface (first surface) of the substrate 11, element connection electrodes 13a and 13b to which the element electrodes 1a and 1b of the light-emitting element 1 are connected are formed on the upper surface (second surface), and via electrodes 14a and 14b for electrically connecting between the external connection electrode 12a and the element connection electrode 13a and between the external connection electrode 12b and the element connection electrode 13b are provided, and a mounting substrate 10 is prepared.

[0028] 1-2. Light-Emitting Element Mounting Process Here, the light-emitting element 1 is mounted. Specifically, as shown in FIG. 3B, the element connection electrodes 13a and 13b of the mounting substrate 10 and the element electrodes 1a and 1b of the light-emitting element 1 are connected via connection members 21a and 21b. Here, the light-emitting element 1 shown in FIG. 3B is a simplified drawing of a light-emitting element having element electrodes 1a and 1b on the same surface side. The element electrode 1a is, for example, a p-side element electrode connected to the p-side semiconductor layer, and the element electrode 1b is, for example, an n-side element electrode connected to the n-side semiconductor layer. Note that, although not shown in FIG. 3B, a protection element may be mounted in addition to the light-emitting element 1.

[0029] 1-3. Insulating Film Formation Process Here, an insulating film 30 is formed on the entire surface including the surface of the mounted light-emitting element and the surface of the mounting substrate. Here, the entire surface means, as shown in FIG. 3C, the surfaces of the light-emitting element, the surface of the substrate 11, the surfaces of the element connection electrodes 13a and 13b, the surfaces of the connection members 21a and 21b, the surfaces of the element electrodes 1a and 1b of the light-emitting element 1, and the surfaces of the external connection electrodes 12a and 12b that are each exposed to the outside, that is, all the exposed surfaces of the mounting structure.

[0030] The insulating film 30 is preferably formed by atomic layer deposition. The atomic layer deposition method can form a dense insulating film 30 with a uniform film thickness on the entire surface including surfaces in different surface directions. Also, as a result, a protection function can be ensured with an insulating film 30 having a relatively thin film thickness, so that the insulating film 30 in the portion to be removed by laser ablation can be made thin, and it becomes possible to easily remove the insulating film 30 by laser ablation. The atomic layer deposition method is a method of forming a layer of reaction components one atomic layer at a time. For example, when forming a protective film of aluminum oxide (Al2O3) using TMA (trimethylaluminum) and water (H2O), it is as follows.

[0031] First, H2O gas is introduced to form OH groups on the surface where the insulating film is to be formed (first reaction). Next, the excess gas is exhausted, and then TMA gas is introduced to react the OH groups formed in the first reaction with TMA (second reaction). Next, the excess gas is exhausted. Then, taking the first reaction, exhaustion, the second reaction, and exhaustion as one cycle, and repeating this, aluminum oxide (Al2O3) with a predetermined film thickness can be formed.

[0032] The atomic layer deposition method is a film formation method with low straightness of reaction components and excellent step coverage. Different from sputtering, CVD, etc., reaction components are supplied even in the vicinity of obstacles. As a result, in regions such as between the light-emitting element and the substrate, a higher-quality protective film with a more uniform film thickness and film quality can be formed in the same way as in other regions without obstacles.

[0033] The insulating film obtained by atomic layer deposition has a good film quality with fewer pinholes compared to insulating films obtained by sputtering, CVD, etc., and has an excellent protective function.

[0034] In addition to, for example, aluminum oxide (Al2O3), the insulating film 30 can adopt, for example, silicon oxide (SiO2), aluminum nitride (AlN) or silicon nitride (Si3N4), niobium oxide (Nb2O5), tantalum oxide (Ta2O5), silicon oxynitride (SiO x N y ). The protective film preferably uses aluminum oxide or silicon oxide. More preferably, it is a multilayer structure of two or more layers of aluminum oxide and silicon oxide. By making the protective film a multilayer film, the gas barrier property is improved. Also, by making it a multilayer film, an optical function (for example, a function as an antireflection film) can be further imparted. The film thickness of the insulating film 30 is not particularly limited, but is preferably 5 nm or more and 500 nm or less, more preferably 10 nm or more and 100 nm or less, and particularly preferably 20 nm or more and 50 nm or less. This is because moisture and humidity permeation can be suppressed while improving productivity.

[0035] (2) Electrode exposure process of Embodiment 2 In the electrode exposure step of Embodiment 2, as shown in FIG. 3D, laser light that passes through the insulating film 30 and is absorbed by the external connection electrodes 12a and 12b provided under the insulating film 30 is irradiated from above the insulating film 30, so that the ceramic body (substrate 11) does not expose from the external connection electrodes 12a and 12b, and a part of the surface of the external connection electrodes 12a and 12b, for example, the electrode material in the vicinity of the interface between the insulating film 30 and the external connection electrodes 12a and 12b is removed. By removing this electrode material, the external connection electrodes 12a and 12b are exposed from the insulating film 30. At this time, the pulse energy of the pulsed laser light is set, for example, in the range of 1 μJ or more and 1000 μJ or less, preferably 2 μJ or more and 300 μJ or less, more preferably 3 μJ or more and 100 μJ or less, and even more preferably 3 μJ or more and 10 μJ or less. Also, the pulse width of the laser light is set, for example, in the range of 100 femtoseconds or more and 2000 femtoseconds or less, preferably 100 femtoseconds or more and 1000 femtoseconds or less, and more preferably 100 femtoseconds or more and 500 femtoseconds or less. By using such a pulsed laser, it is possible to suppress the conductivity of the ceramic body while removing the insulating film on the electrode.

[0036] Through the above steps, the light-emitting device 100 shown in FIG. 2C is manufactured by the manufacturing method of the light-emitting device of Embodiment 2. In the electrode exposure step, it is preferable that the laser beam scans at least once over the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided in a plan view. When the insulating film 30 has an electrode material provided directly thereunder, the insulating film 30 is removed together with the electrode material. On the other hand, the insulating film 30 provided directly on the ceramic body remains on the ceramic body, and the ceramic body is not exposed from the insulating film 30. Therefore, by scanning the laser beam so as to pass at least once over the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided, the external connection electrodes 12a and 12b can be selectively exposed from the insulating film 30 without performing laser alignment. More preferably, in each row where the laser beam is scanned, at least a part of the irradiation spots of the laser beam in adjacent rows overlap. By doing so, it becomes possible to more reliably scan the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided. FIG. 2A is a top view of the light-emitting device 100, and FIG. 2B is a bottom view of the light-emitting device 100. As shown in FIG. 2A, for example, the light-emitting device 100 includes a protection element 2.

[0037] Embodiment 3 The light-emitting device and the method of manufacturing the light-emitting device according to Embodiment 3 will be described. The light-emitting device according to Embodiment 3 mainly differs in the following points. (a) The light-emitting device according to Embodiment 3 includes a package 110 as a ceramic member instead of the mounting substrate 10. (b) The light-emitting device according to Embodiment 3 includes a distributed Bragg reflector 230 made of a dielectric multilayer film as an insulating film.

[0038] In addition, the method of manufacturing the light-emitting device according to Embodiment 3 further differs in the following points in addition to the differences related to the above-described light-emitting device. (c) The method of manufacturing the light-emitting device according to Embodiment 2 includes the mounting step of the light-emitting element, which was included in the preparation step, after the electrode exposure step. Hereinafter, the light-emitting device and the method of manufacturing the light-emitting device according to Embodiment 3 will be described in detail.

[0039] Light-emitting device of Embodiment 3 In the light-emitting device of Embodiment 3, as shown in FIGS. 4A and 4B, the package 110 (ceramic member) includes a ceramic substrate 111 (ceramic body) having a recess, element connection electrodes 113a and 113b formed on the bottom surface (second surface) of the recess to which the element electrodes of the light-emitting element 101 are connected, and external connection electrodes 112a and 112b formed on the lower surface (first surface) of the package 110 on the opposite side of the bottom surface of the recess, as shown in FIGS. 4B and 4C. Here, the external connection electrodes 112a and 112b and the element connection electrodes 113a and 113b are connected by through electrodes 114a and 114b formed in through holes penetrating the ceramic substrate 111, for example.

[0040] Further, a distributed Bragg reflector 230 is formed on the entire surface of the package 110 including the portion of the inner surface of the recess of the package 110 excluding the portion where the element connection electrodes 113a and 113b are formed, the portion of the package 110 excluding the portion where the external connection electrodes 112a and 112b are formed, the side surface of the package 110, and the upper end surface of the package excluding the portion where the spacer 151 is formed. The distributed Bragg reflector 230 is formed by alternately laminating two or more translucent dielectric films having different refractive indices with a predetermined film thickness, for example, and reflects the light emitted by the light-emitting element 101. In the light-emitting device of Embodiment 3, the distributed Bragg reflector 230 formed on the inner surface of the recess of the package 110 mainly serves to reflect the light emitted by the light-emitting element 101, and the distributed Bragg reflector 230 formed on the lower surface of the package 110 serves to insulate and separate the external connection electrode 112a and the external connection electrode 112b.

[0041] Further, the light-emitting element 101 is provided in the recess of the package 110, and the element electrodes of the light-emitting element 101 are connected to the element connection electrodes 113a and 113b via connection members. The light-emitting device of Embodiment 3 includes a translucent lid 150 made of, for example, transparent glass, which covers the recess of the package 110 in which the light-emitting element 101 is provided. The translucent lid 150 is joined at four corners of the upper end surface of the package 110 surrounding the recess by a spacer 151 that also serves as a connection member.

[0042] In the light-emitting device of Embodiment 3 configured as described above, since the portion of the inner surface of the recess of the package 110 excluding the portions where the element connection electrodes 113a and 113b are formed is covered with the distributed Bragg reflector 230, the light emitted from the light-emitting element 101 can be efficiently extracted to the outside through the translucent lid 150, and the light extraction efficiency can be increased.

[0043] Method for manufacturing the light-emitting device of Embodiment 3 As described above, the method for manufacturing the light-emitting device of Embodiment 3 is different in that, in addition to the differences related to the above-described light-emitting device, the mounting step of the light-emitting element included in the preparation step in the method for manufacturing the light-emitting device of Embodiment 2 is included after the electrode exposure step. Hereinafter, the method for manufacturing the light-emitting device of Embodiment 3 will be specifically described.

[0044] First, the method for manufacturing the light-emitting device of Embodiment 3 includes, in the preparation step in the method for manufacturing the ceramic member of Embodiment 1, 1-1. Package preparation step, 1-2. Distributed Bragg reflector (insulating film) formation step. In the following description, those excluding the external connection electrodes 112a and 112b, the element connection electrodes 113a and 113b, the through electrodes 114a and 114b, and the distributed Bragg reflector 230 are referred to as the ceramic substrate 111 (ceramic body).

[0045] 1-1. Package preparation step Here, a package 110 having a recess is prepared. Specifically, a ceramic substrate 111 having a recess is prepared, external connection electrodes 112a and 112b are formed on the lower surface of the ceramic substrate 111, and element connection electrodes 113a and 113b are formed on the bottom surface of the recess. The ceramic substrate 111 can be manufactured by either a so-called post-fire method or a co-fire method. When manufacturing the ceramic substrate 111, it is preferable that the outermost surface of the external connection electrode contains Au.

[0046] 1-2. Distributed Bragg reflector (insulating film) formation step Here, a distributed Bragg reflection film is formed on the inner surface of the recess of the package 110 (including the surfaces of the element connection electrodes 113a and 113b), the upper end surface and the side surfaces of the package 110, and the lower surface of the package 110 (including the surfaces of the external connection electrodes 112a and 112b).

[0047] The distributed Bragg reflection film is preferably formed by atomic layer deposition (ALD method). By forming it by atomic layer deposition, two or more dielectric films constituting the distributed Bragg reflection film can be formed with a predetermined film thickness on the bottom surface and the side surfaces having different surface directions of the recess. Thereby, a distributed Bragg reflection film having the same reflection characteristics can be easily formed on the bottom surface and the side surfaces having different surface directions of the recess. The distributed Bragg reflection film preferably has a reflectance of 70% or more in the range of 350 nm to 410 nm and a reflectance of 20% or less in the range of 500 nm to 535 nm. Within this range, the Bragg reflection film effectively transmits green light and effectively reflects ultraviolet light. When the light-emitting element emits ultraviolet light, the distributed Bragg reflection film on the electrode surface can be effectively removed by laser ablation, and further, the remaining distributed Bragg reflection film can contribute to improving the light extraction efficiency of the light-emitting element. The distributed Bragg reflection film can be formed, for example, by alternately forming a first dielectric film made of Nb2O5 and a second dielectric film made of SiO2. Note that the film thickness, the number of stacked layers, etc. of the first dielectric film and the second dielectric film are appropriately set in consideration of the emission wavelength of the light-emitting element 101.

[0048] When forming the first dielectric film made of Nb2O5 by atomic layer deposition, for example, the following steps are taken. (Step A1) Exhaust the inside of the vacuum chamber to a predetermined degree of vacuum, and heat the temperature of the ceramic member to the film formation temperature. The film formation temperature is preferably set in the range of 150°C or higher and 300°C or lower, more preferably 200°C or higher and 250°C or lower. (Step A2) Then, an oxygen source gas containing oxygen is introduced into the vacuum chamber to bond oxygen to the entire ceramic member. For example, O3 (ozone) gas can be used as the oxygen source gas. After bonding oxygen to the surface of the ceramic member, the remaining oxygen source gas is exhausted. In this step, H2O may be used to bond OH groups to the surface of the ceramic member. (Step A3) Next, an organometallic source gas containing niobium (Nb) is introduced into the vacuum chamber, and the oxygen bonded to the surface of the ceramic member and the organometallic source gas containing Nb are reacted to bond Nb to the oxygen bonded to the surface of the ceramic member. As the organometallic source gas containing Nb, for example, tris(diethylamido)(tert-butylimido)niobium(V) or the like can be used. (Step A4) After bonding Nb to the oxygen bonded to the surface of the ceramic member, the remaining organometallic source gas containing Nb is exhausted. (Step A5) Next, an oxygen source gas containing oxygen is introduced to bond oxygen to the Nb on the ceramic member. By repeating steps A2 to A5 a predetermined number of times on the surface of the ceramic member, Nb2O5 having a required film thickness is formed.

[0049] When forming the second dielectric film made of SiO2 by atomic layer deposition, for example, the following steps are taken. (Step B1) The inside of the vacuum chamber is evacuated to a predetermined vacuum level, and the temperature of the ceramic member is heated to the film formation temperature. The film formation temperature is preferably set in the range of 150°C or higher and 300°C or lower, more preferably 200°C or higher and 250°C or lower. (Step B2) Then, an oxygen source gas containing oxygen is introduced into the vacuum chamber to bond oxygen to the entire ceramic member. As the oxygen source gas containing oxygen, O3 (ozone) gas can be used. After bonding oxygen to the surface of the ceramic member, the remaining oxygen source gas is exhausted. In this step, H2O may be used to bond OH groups to the surface of the ceramic member. (Step B3) Next, an organometallic source gas containing silicon (Si) is introduced into the vacuum chamber, and the oxygen bonded to the surface of the ceramic member and so on is reacted with the organometallic source gas containing Si to bond Si to the oxygen bonded to the surface of the ceramic member. As the source gas of Si, tris(dimethylamino)silane gas, bis(diethylamino)silane gas, or the like can be used. (Step B4) After bonding Si to the oxygen bonded to the surface of the ceramic member, the remaining organometallic source gas containing Si is exhausted. (Step B5) Next, an oxygen source gas containing oxygen is introduced to bond oxygen to the Si on the ceramic member. By repeating steps B2 to B5 a predetermined number of times on the surface of the ceramic member, SiO2 having a required film thickness is formed.

[0050] Note that the distributed Bragg reflector is not limited to being formed by atomic layer deposition, and may be formed by sputtering or vapor deposition. Further, the distributed Bragg reflector may be selectively formed on the inner surface of the recess of the package 110 (including the surfaces of the element connection electrodes 113a and 113b) and the lower surface of the package 110 (including the surfaces of the external connection electrodes 112a and 112b), excluding the upper end surface and the side surface of the package 110.

[0051] (2) Electrode exposure step of Embodiment 3 In the electrode exposure process of Embodiment 3, from above the distributed Bragg reflection films formed on the external connection electrodes 112a and 112b and from above the distributed Bragg reflection films formed on the element connection electrodes 113a and 113b, laser light that passes through the distributed Bragg reflection films and is absorbed by the external connection electrodes 112a and 112b and the element connection electrodes 113a and 113b is irradiated, and a part of the surface of the external connection electrodes 112a and 112b and a part of the surface of the element connection electrodes 113a and 113b are removed so that the ceramic substrate 111 is not exposed. By removing this electrode material, the external connection electrodes 112a and 112b and the element connection electrodes 113a and 113b are exposed from the distributed Bragg reflection film 230. The peak wavelength of the laser light is 250 nm to 550 nm, and preferably, the light has a peak wavelength of 500 nm to 535 nm. If laser light having a peak wavelength within the range of 500 nm to 535 nm is used, Au contained in the electrode material can be removed by laser ablation with relatively inexpensive equipment.

[0052] Through the above steps, the package 110 in the light-emitting device of Embodiment 3 is prepared.

[0053] (3) Mounting and light-transmissive lid body joining step The light-emitting element 101 is mounted on the package 110 prepared as described above, and the light-transmissive lid body 150 is joined by the spacer 151.

[0054] Through the above steps, the light-emitting device of Embodiment 3 is fabricated.

[0055] Embodiment 4 The light-emitting device and the method for manufacturing the light-emitting device of Embodiment 4 will be described. The light-emitting device of Embodiment 4 is configured in the same manner as the light-emitting device of Embodiment 3, except that the element connection electrodes 113a and 113b are exposed from the distributed Bragg reflection film 230 at a plurality of locations. Specifically, the portions of the element connection electrodes 113a and 113b that are connected to the element electrodes of the light-emitting element are exposed by a plurality of openings 230a and 230b provided in the distributed Bragg reflection film 230 as shown in FIG. 5. In the light-emitting device of Embodiment 3, the portions where the element connection electrodes 113a and 113b are exposed are exposed by, for example, rectangular openings 230A and 230B provided in the distributed Bragg reflector 230, and the openings 230A and 230B are indicated by broken lines in FIG. 5, respectively.

[0056] In the light-emitting device of Embodiment 4, the openings 230a and 230b for exposing the element connection electrodes 113a and 113b at a plurality of locations are preferably provided in a circular shape and dispersed over the entire position facing the element electrodes of the light-emitting element 1. In the light-emitting device of Embodiment 4, the element electrode connection portions of the light-emitting element are provided, for example, at positions corresponding to the exposed portions of the element connection electrodes 113a and 113b, that is, the openings 230a and 230b, in sizes similar to those of the openings 230a and 230b, and are connected by bumps formed at the portions where the element connection electrodes 113a and 113b are exposed in the openings 230a and 230b.

[0057] In the light-emitting device of Embodiment 4, when the light-emitting element includes, for example, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer in this order from the substrate side on the substrate, and a flip-chip type light-emitting element having a first conductivity type electrode connection portion and a second conductivity type electrode connection portion on the same surface side of the second conductivity type semiconductor layer side, the element electrode connection portions (the first conductivity type electrode connection portion and the second conductivity type electrode connection portion) of the light-emitting element are provided, for example, as follows. First, after laminating a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate for the light-emitting element, the second conductivity type semiconductor layer and the active layer on the first conductivity type semiconductor layer in the portion where the first conductivity type electrode connection portion is to be formed are removed to expose the first conductivity type semiconductor layer. Then, a first conductivity type electrode connection portion that contacts the exposed first conductivity type semiconductor layer is formed. The first conductivity type electrode connection portion is formed as described above. The second conductivity type electrode connection portion is formed at a predetermined position on the second conductivity type semiconductor layer. In addition, an insulating film is formed, for example, on the portions other than the first conductivity type electrode connection portion and the second conductivity type electrode connection portion on the second conductivity type semiconductor layer.

[0058] The first-conduction-type electrode connection portion and the second-conduction-type electrode connection portion of the light-emitting element configured as described above are each connected via bumps to the portions where the element connection electrodes 113a and 113b of the package are exposed. Thereby, the light-emitting element is mounted. The light-emitting element is a light-emitting element having a peak wavelength in the range of 280 nm to 575 nm, preferably a light-emitting element having a peak wavelength in the range of 280 nm to 410 nm, and particularly preferably a light-emitting element having a peak wavelength in the range of 350 nm to 410 nm.

[0059] Hereinafter, regarding the manufacturing method of the light-emitting device of Embodiment 4, the parts different from the manufacturing method of the light-emitting device of Embodiment 3 will be described.

[0060] First, the manufacturing method of the light-emitting device of Embodiment 4 is the same as the manufacturing method of the light-emitting device of Embodiment 3 in that in the preparation step in the manufacturing method of the ceramic member of Embodiment 1, it includes 1-1. Package preparation step, 1-2. Distributed Bragg reflector (insulating film) formation step.

[0061] Electrode exposure step of Embodiment 4 In the electrode exposure step of Embodiment 4, from above the distributed Bragg reflector formed on the external connection electrodes 112a and 112b and from above the distributed Bragg reflector formed on the element connection electrodes 113a and 113b, laser light that passes through the distributed Bragg reflector and is absorbed by the external connection electrodes 112a and 112b and the element connection electrodes 113a and 113b is irradiated to evaporate and remove a part of the surface of the external connection electrodes 112a and 112b and a part of the surface of the element connection electrodes 113a and 113b so that the ceramic substrate 111 is not exposed. This is the same as the electrode exposure step of Embodiment 3.

[0062] However, in the electrode exposure step of Embodiment 4, it is different from the electrode exposure step of Embodiment 3 in that laser ablation is performed so that the element connection electrodes 113a and 113b are exposed from the distributed Bragg reflector 230 at a plurality of locations. For example, in the electrode exposure step of Embodiment 4, when irradiating laser light from above the distributed Bragg reflection films formed on the element connection electrodes 113a and 113b, the on / off of the laser light is controlled based on the position information of the openings 230a and 230b. For example, the portions for exposing the element connection electrodes 113a and 113b are digitized by XY coordinates on the plane of the element connection electrodes 113a and 113b or on the distributed Bragg reflection film 230, and based on this data, laser light is irradiated on the portions for exposing the element connection electrodes 113a and 113b, and the irradiation of laser light is stopped on other portions for control. According to the electrode exposure step of Embodiment 4 above, the openings 230a and 230b can be formed in the distributed Bragg reflection film 230 with high positional accuracy.

[0063] In the package fabricated as described above, bumps are respectively formed on the element connection electrodes 113a and 113b exposed through the openings 230a and 230b, and the first conductivity type electrode connection portion and the second conductivity type electrode connection portion of the light emitting element are respectively opposed to the bumps and connected. The light emitting element is mounted at a predetermined position in the package as described above.

[0064] Modification 1. In the light emitting device of Embodiment 4 above, the opening shapes and areas of the openings 230a and 230b are made the same. However, in the light emitting device of the embodiment, the opening shapes and areas of the openings 230a and 230b are not limited to being the same. By using laser ablation, it is possible to select the area where the openings 230a and 230b are exposed. For example, if the area of the openings 230a and 230b is adjusted so that the remaining area of the distributed Bragg reflection film 230 becomes larger, the light from the light emitting element can be efficiently reflected by the distributed Bragg reflection film 230, and thus the light extraction efficiency is improved. For example, as shown in FIG. 6, the opening for exposing the element connection electrode 113a may be constituted by two types of openings 230a and 230aa having different opening areas, or may be constituted by three or more types of openings having different opening areas. Further, the opening for exposing the element connection electrode 113a may be constituted by two or more types of openings having different shapes. In this case, the opening areas may be different from each other or the same. The shape of the opening is not limited to a circular shape, and may be any shape that can be realized by scanning a laser, such as an elliptical shape, a triangular shape, a quadrangular shape, or other polygonal shapes.

[0065] Modification Example 2 In the light-emitting device of Embodiment 2, the external connection electrodes 12a and 12b are the external connection electrodes 12a and 12b having the same shape as shown in FIG. 2B. Similarly, for the light-emitting devices of Embodiments 3 to 4, they are constituted by the external connection electrodes 112a and 112b having the same shape as shown in FIG. 4C. However, the two external connection electrodes of the light-emitting device of the embodiment may have different shapes and / or sizes.

[0066] Modification Example 3 As shown in FIG. 7A, the light-emitting devices of Embodiments 2 to 4 may have a heat dissipation part 16 made of a metal with high thermal conductivity, for example, between the two external connection electrodes 12a (112a) and 12b (112b). The heat dissipation part 16 may be the same metal as the external connection electrodes 12a (112a) and 12b (112b), or may be different.

[0067] Modification Example 4 In the light-emitting devices of Embodiments 2 to 4, both or one of the external connection electrodes 12a (112a) and 12b (112b) may have extending parts 12aa (112aa) and 12bb (112bb) as shown in FIG. 7B.

[0068] Modification Example 5 In the base member and the light-emitting device of Embodiments 1 to 4, the form in which the base is a ceramic body has been described. However, the base is not limited to a ceramic body. For example, it may be a resin body such as glass epoxy that is inexpensive and versatile while having insulation or heat resistance with respect to electrodes. Further, for the purpose of compensating for the heat dissipation of this resin body, a conductive member having a high thermal conductivity such as aluminum, silver, or copper, or an insulating member having a high thermal conductivity such as aluminum nitride or silicon nitride may be bonded to the lower surface side of the resin body.

[0069] Embodiment 5 The base member and the light-emitting device of Embodiment 5, and the manufacturing method of the base member and the manufacturing method of the light-emitting device of Embodiment 5 will be described. The light-emitting device of Embodiment 5 includes a plurality of light-emitting elements 301 on the base member 310. The base member 310 of Embodiment 5 is a base member 310 on which a plurality of light-emitting elements 301 can be mounted, and includes various forms to be described later.

[0070] Here, first, a specific example of the light-emitting device according to Embodiment 5 will be described with reference to FIGS. 9A and 9B. The light-emitting device 300 in FIG. 9A includes a substrate member 310 and a plurality of light-emitting elements 301 mounted on the first surface of the substrate member 310. On the first surface of the substrate member 310, a positive-side electrode 312a and a negative-side electrode 312b are provided, and a plurality of light-emitting elements 301 are connected between the positive-side electrode 312a and the negative-side electrode 312b. In the example shown in FIG. 9A, 36 light-emitting elements 301 are included, and are divided into three groups each including 12 light-emitting elements 301, and in each group, the 12 light-emitting elements 301 are connected in series. Further, the positive-side electrode 312a includes a pad portion 322a, a lead-out portion 332a connected to the pad portion 322a, and a connection portion connected to the lead-out portion 332a, and the negative-side electrode 312b includes a pad portion 322b, a lead-out portion 332b connected to the pad portion 322b, and a connection portion connected to the lead-out portion 332b. Then, the p-side element electrode of the light-emitting element 301 provided at the head of each group is connected to the connection portion of the positive-side electrode 312a, and the n-side element electrode of the light-emitting element 301 provided at the end of each group is connected to the connection portion of the negative-side electrode 312b. That is, between the positive-side electrode 312a and the negative-side electrode 312b, three groups each including 12 light-emitting elements 301 connected in series are connected in parallel. Here, the connection between the light-emitting elements 301 and the connection between the electrodes 312a and 312b of the base member 310 and the light-emitting elements 301 are connected by wire bonding. In the examples shown in FIGS. 9A and 9B, the light-emitting element 301 is a face-up type light-emitting element including an n-side element electrode and a p-side element electrode on the upper surface which is the light-emitting surface side. Further, in the light-emitting device shown in FIGS. 9A and 9B, three groups connected in parallel and a protection element 342 such as a Zener diode are connected in parallel. Here, although the face-up type light-emitting element is used for explanation, a face-down type light-emitting element may also be used. That is, the light-emitting element is mounted face-down on the base member, and then a frame is formed so as to surround the light-emitting element. Thereafter, the first surface and the second surface of the base member, the frame, and the light-emitting element are covered with an insulating film. In the mounting region surrounded by the frame, a sealing member is disposed so as to cover the light-emitting element. Thereafter, laser irradiation is performed on the electrodes provided on the base member and covered with the insulating film to expose a part of the electrodes. In this way, a light-emitting device using a face-down type light-emitting element can be provided. Hereinafter, the base member and the light-emitting device of Embodiment 5 and its modification will be described.

[0071] First, the base member will be described with reference to FIGS. 8A to 8D. Although the light-emitting element is omitted here, after the light-emitting element is disposed on this base member, a light-emitting device can be obtained by connecting the light-emitting element and the electrodes 312a and 312b with wires respectively. The connection between the light-emitting element and the electrodes 312a and 312b can be electrically connected with a wire between the pad portion 322a or the lead-out portion 332a of the electrode 312a outside the frame 350 surrounding the mounting region of the light-emitting element and the element electrode of the light-emitting element. Alternatively, before arranging the light-emitting element on the base member 310, an insulating film 30 is formed on the base and the electrodes by atomic layer deposition, laser irradiation is performed on the location where the light-emitting element is to be mounted, and the insulating film 30 is partially removed. Laser irradiation may also be performed on the location where the wire is to be connected to remove the insulating film 30. The light-emitting element is mounted on the electrode from which the insulating film 30 has been removed. Then, a frame is formed so as to surround the mounting region where the light-emitting element is mounted. Then, in a plan view, inside the frame, that is, in the mounting region where the light-emitting element is mounted, a sealing member containing a phosphor is arranged. An insulating film may be formed on the light-emitting element again before arranging the sealing member, or an insulating film may be formed so as to cover the sealing member after arranging the sealing member. As a result, an arrangement can be achieved in which it is difficult for moisture from the outside to reach the location where the first insulating film has been removed. Finally, or before arranging the sealing member, the insulating film 30 covering the electrode, that is, the pad portion, which is the location for connecting to the external terminal, is removed by laser irradiation. A light-emitting device can also be manufactured in such a form. Here, the base member 310 shown in FIG. 8B can use the same material as the base member used in the light-emitting device shown in FIGS. 9A and 9B, and the base members shown in FIGS. 8C and 8D are modified forms thereof. The base members 310 shown in FIGS. 8B, 8C, and 8D have different positional relationships between the frame 350 and the insulating film 30, positional relationships between the pad portion and the insulating film 30, etc., but the electrode structures are the same.

[0072] -Description of the base member- The base member 310 of the present embodiment includes a base 311 having a first surface and a second surface opposite to the first surface, electrodes 312a and 312b arranged on the first surface of the base 311, and an insulating film 30 covering a part of the first surface, the second surface of the base 311, and the electrodes 312a and 312b. The base 311 may be made of a material selected from a ceramic body or a resin body such as glass epoxy. As described above, from the viewpoint of heat dissipation, a member having a high thermal conductivity may be bonded to the base 311. The electrodes 312a and 312b are disposed on the first surface of the substrate 311. A pair of pad portions 322a and 322b shown in FIG. 8A as an example are provided at diagonal corners of the substrate 311, and the lead portions 332a and 332b are drawn from the pad portions 322a and 322b along the diagonal. For example, the pad portion 322a and the lead portion 332a may be used as the electrode 312a on the positive electrode side, and the pad portion 322b and the lead portion 332b may be used as the electrode 312b on the negative electrode side. Also, a protection element 342 for element protection may be provided between the positive electrode 312a and the negative electrode 312b. And in the substrate member 310, a light emitting element can be mounted on the same surface as the first surface on which the electrodes 312a and 312b are disposed. That is, the substrate member 310 of Embodiment 5 can be used as a face-up type mounting member in which the electrodes 312a and 312b and the light emitting element are provided on the same surface. The insulating film 30 may be formed by atomic layer deposition, for example, using aluminum oxide (Al2O3). By forming the insulating film 30 by atomic layer deposition, aluminum oxide can also be made to penetrate into the second surface of the substrate 311. The insulating film 30 covers the lead-out portions 332 (332a, 332b), but at least a part of the pad portions 322a, 322b is exposed from the insulating film 30. Here, the surface roughness of the pad portions 322a, 322b exposed from the insulating film 30 may be made larger than the surface roughness of the lead-out portions 332 (332a, 332b) covered with the insulating film 30. The surface roughness Ra of the pad portions 322a, 322b exposed from the insulating film 30 may be 0.3 μm or more and 30 μm or less, preferably 0.3 μm or more and 3 μm or less. By making the surface of the pad portions 322a, 322b exposed from the insulating film 30 rougher than the surface of the lead-out portions 332 (332a, 332b) covered with the insulating film 30, the adhesion between the pad portions 322a, 322b and the outside, for example, solder, can be increased when electrically connecting the pad portions 322a, 322b and the outside. For example, the difference between the surface roughness Ra of the lead-out portions 332a, 332b and the surface roughness Ra of the pad portions 322a, 322b is preferably at least 0.1 μm or more, preferably 0.2 μm or more, and more preferably 0.5 μm or more. Thereby, while making the surface of the lead-out portions 332a, 332b smooth, the surface of the pad portions 322a, 322b can be made rough.

[0073] As a preferred embodiment, around the pad portions 322a, 322b, the surface of the substrate 311 is exposed, and the surface roughness of the exposed surface of the substrate 311 may be made larger than the surface roughness of the surface of the substrate 311 covered with the insulating film 30. That is, in FIGS. 8B to 8C, the surface roughness of the substrate exposed portion 312 around the pad portions 322a, 322b is rougher than the surface roughness of the substrate 311 covered with the insulating film 30. By making the surface roughness of the substrate exposed portion 312 rough, the spread of the solder can be suppressed, and the solder can be easily returned to the pad portion side. Therefore, when soldering to the pad portions 322a, 322b, the solder can be easily retained on the pad portions. Instead of exposing the entire pad portions 322a and 322b from the insulating film 30, a part of the pad portions 322a and 322b may be exposed from the insulating film 30 (FIG. 8D). In this case, the surface of the pad portions 322a and 322b exposed from the insulating film 30 is made larger than the surface roughness of the pad portions 322a and 322b not exposed from the insulating film 30, that is, the surface roughness of the pad portions 322a and 322b covered with the insulating film 30. Even in such an embodiment, when electrically connecting the pad portions 322a and 322b to the outside, for example, with solder, the adhesion between the pad portions 322a and 322b and the solder can be improved.

[0074] As a preferred embodiment, the base member 310 may be provided with a frame body 350 so as to surround the mounting region for mounting the light-emitting element. In FIG. 8A showing an example of the frame body 350, the frame body 350 is circular in plan view, but may be a polygonal shape such as a quadrilateral, pentagon, hexagon, octagon, or an ellipse. Also, one frame body may be divided into two or more, such as a semi-circular shape, a sector shape, a triangle, a quadrilateral, etc., or a plurality of frame bodies may be provided in combination. That is, in one light-emitting device, the mounting region surrounded by the frame body may not be one, but may have a plurality of mounting regions. Phosphors showing different emission colors may be appropriately arranged in the plurality of mounting regions. Thereby, various emission colors can be realized by color mixing. The frame body 350 may be, for example, a thermosetting resin such as a silicone resin, an epoxy resin, or a modified silicone resin. Further, aluminum oxide, titanium oxide, silicon oxide, etc. may be mixed into the thermosetting resin. By mixing aluminum oxide, titanium oxide, etc. into the thermosetting resin, for example, when manufacturing a light-emitting device in which a light-emitting element is arranged inside the frame body 350, the light emitted laterally from the light-emitting element can be reflected by the frame body 350 and emitted upward, and the light extraction efficiency of the light-emitting device can be increased.

[0075] As a preferred embodiment, the frame 350 may be provided on the insulating film 30 (FIG. 8B). By forming the frame 350 on the insulating film 30, it is possible to improve the adhesion of the frame. Further, when the frame 350 is formed on the insulating film 30 formed by atomic layer deposition, the surface of the insulating film is smoothed by the dense insulating film formed by atomic layer deposition, making it difficult for the resin of the frame to spread (difficult to bleed), and the edge of the frame 350 can be sharpened. As a result, when forming the frame 350 on a substrate covered with an insulating film, the ratio of the height to the width of the frame 350 can be increased compared to the case of forming the frame 350 on a substrate not covered with an insulating film. That is, when forming the frame 350 on a substrate covered with an insulating film, a frame with a narrow width and a high height can be formed. Instead of the form of forming the frame 350 on the above-described insulating film, the insulating film 30 may be provided after forming the frame 350 (FIG. 8C).

[0076] Next, a light-emitting device including the above-described substrate member will be described. -Description of the Light-Emitting Device- The light-emitting device 300 of the present embodiment includes the above-described substrate member 310 and a light-emitting element 301 provided in the mounting region. The mounting region provided on the substrate member 310 refers to the inner region surrounded by the frame 350 in a plan view. In the mounting area of the light-emitting device 300 shown in FIG. 9A, which shows the above-described specific example, a plurality of light-emitting elements 301 are arranged, and adjacent light-emitting elements 301 are electrically connected by conductive members 311a and 311b. In this specific example, the conductive members 311a and 311b are wires, and the n-side element electrode and the p-side element electrode between the face-up mounted light-emitting elements are connected by wire bonding. The conductive members 311a and 311b are conductive wires having a low electrical resistance value and being easy to process, such as gold, silver, copper, aluminum, etc. or alloys thereof. Also, when using a conductive wire, it is preferable to protect the wire with a thermosetting encapsulating resin such as silicone resin, epoxy resin, or modified silicone resin. In the light-emitting device 300 of the specific example shown in FIGS. 9A and 9B, an example using a conductive wire as the conductive members 311a and 311b is shown, but a flip-chip mounting may be performed using an element in which an n-side element electrode and a p-side element electrode are provided on the surface opposite to the light-emitting surface as the light-emitting element. As described in the description of the base member above, in the light-emitting device 300 of the present embodiment, the surface roughness of the pad portions 322a and 322b exposed from the insulating film 30 is larger than the surface roughness of the pad portions 322a and 322b covered by the insulating film 30 or the surface roughness of the lead-out portions 332 (332a and 332b) covered by the insulating film 30. Therefore, when electrically connecting the pad portions 322a and 322b to the outside with, for example, solder, the adhesion between the pad portions 322a and 322b and the solder can be improved. Here, the surface roughness Ra of the pad portions 322a and 322b exposed from the insulating film 30 may be 0.3 μm or more and 30 μm or less, preferably 0.3 μm or more and 3 μm or less.

[0077] As a suitable light-emitting device 300, a frame body 350 may be provided around a plurality of light-emitting elements 301. The frame body 350 may be provided in advance on a base member before mounting the light-emitting elements 301, or after mounting the light-emitting elements 301 on a base member without a frame body, the frame body 350 may be provided around the light-emitting elements 301. FIGS. 9A and 9B show a specific example produced by mounting the light-emitting elements 301 on a base member 310 without a frame body and then providing the frame body 350 around the light-emitting elements 301. As described above, the frame body 350 may be a mixture of a thermosetting resin and aluminum oxide, titanium oxide, silicon oxide, or the like. By providing the frame body 350, the light from the light-emitting elements 301 can be appropriately reflected.

[0078] As a suitable light-emitting device 300, a sealing member 360 for sealing the region surrounded by the frame body 350 may be further provided. The sealing member 360 is a member having electrical insulation and capable of transmitting the light emitted from the light-emitting elements 301. It is preferably a material having fluidity before curing, and the sealing member 360 can be easily formed by applying it using the fluidity before curing and then curing it. As the sealing member 360, a light-transmissive resin having a light transmittance of 70% or more is preferably selected. Examples of the light-transmissive resin include silicone resin, modified silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, TPX resin, polynorbornene resin, or a hybrid resin containing one or more of these resins. Among them, silicone resin is preferable because it has excellent heat resistance and light resistance and little volume shrinkage after curing. In particular, dimethyl silicone resin is particularly preferable because of its excellent heat resistance and light resistance. The sealing member 360 may contain a phosphor that is excited by receiving light from the light-emitting element 301 and converts it into different wavelengths. As an example of the phosphor, a fluoride phosphor may be used from the viewpoint of improving color rendering properties. Examples of the fluoride phosphor include, for example, K2SiF6:Mn (KSF phosphor) or K2(Si,Al)F6:Mn (KSAF phosphor). Here, in the formula representing the composition of the phosphor, before the colon (:) represents the elements constituting the host crystal and their molar ratios, and after the colon (:) represents the activating element. In the formula representing the composition of the phosphor, a plurality of elements described separated by commas (,) indicates that at least one of these plurality of elements is contained in the composition, and it may contain a combination of two or more. Note that the phosphor contained in the sealing member is not limited to the fluoride phosphor, and other phosphors may be used corresponding to the emission peak wavelength of the light-emitting element. Further, the sealing member 360 may contain a light diffusing material (for example, an inorganic material such as titanium oxide) that diffuses light over a wide range. By including the light diffusing material, it becomes possible to suppress light emission unevenness in the light emitting region.

[0079] As a preferable light-emitting device 300, the insulating film 30 may cover the frame body 350 and / or the sealing member 360. That is, it is a form different from FIG. 9B, and it may be a light-emitting device in which the insulating film 30 covers the frame body 350 as shown in FIG. 9C, or a light-emitting device in which the insulating film 30 covers the frame body 350 and the sealing member 360 as shown in FIG. 9D. By adopting such a covering mode with the insulating film 30, it is possible to reduce the entry of moisture caused by moisture in the atmosphere or the like into the frame body 350, the sealing member 360, and the light-emitting element 301. Furthermore, as a light-emitting device that reduces the entry of moisture into the light-emitting device, in the light-emitting device shown in FIG. 9B, a sealing member 362 may be further provided outside the sealing member 360. For example, as shown in FIG. 9E, the sealing member may be a multi-layer (for example, two layers), and a material with lower moisture permeability than the inner sealing member 361 may be used for the outer sealing member 362. As another light-emitting device, for example, with respect to the frame 351 and the sealing member 361 as shown in FIG. 9F, another frame 352 and sealing member 362 may be further arranged to reduce the entry of moisture into the light-emitting device. Further, phosphors contained in the sealing member 361 and phosphors contained in the sealing member 362 that exhibit different emission colors may be used. For example, as the phosphor contained in the sealing member 361, a phosphor that emits red light such as a KSF phosphor, a KSAF phosphor, a CASN phosphor, a SCASN phosphor, etc. is used, and as the phosphor contained in the sealing member 362, a phosphor that emits light in either green or yellow such as a YAG phosphor, a silicate phosphor, G-LuAG, TAG, etc. may be used. As another light-emitting device, for example, a light-transmitting member 370 with low moisture permeability may be arranged on the sealing member 360 as shown in FIG. 9G to reduce the entry of moisture into the light-emitting device. Examples of the light-transmitting member 370 with low moisture permeability include glass, a hydrophobic resin, etc. As another light-emitting device, for example, with respect to the light-emitting device shown in FIG. 9B, the frame 350 and / or the sealing member 360 may be further coated with an insulating film to reduce the entry of moisture into the light-emitting device.

[0080] Next, these manufacturing methods will be described. First, the manufacturing method of the light-emitting device will be described. -Explanation of the manufacturing method of the light-emitting device- In the manufacturing method of the above-described substrate member without a frame for the light-emitting device 300 of the present embodiment, the preparation process includes 2-1. Pre-mounting process, 2-2. Light-emitting element mounting process, and 2-3. Insulating film forming process. Further, the manufacturing method of the light-emitting device includes a frame forming process for forming a frame 350 that surrounds the light-emitting element 301. Hereinafter, the manufacturing method of the light-emitting device of the present embodiment will be described in more detail.

[0081] 2-1. Pre-mounting process In the pre-mounting process, a structure provided with electrodes 312a, 312b including pad portions 322a, 322b connected to the outside and lead-out portions 332 (332a, 332b) drawn from the pad portions 322a, 322b is prepared.

[0082] 2-2. Light-emitting element mounting process In the light-emitting element mounting process, the light-emitting element 301 is mounted on the mounting area of the base member 310 prepared in the pre-mounting process. As an example, the light-emitting device shown in Fig. 9A mounts a plurality of light-emitting elements 301 in the mounting area and electrically connects the plurality of mounted light-emitting elements 301 to each other using conductive wires.

[0083] 2-3. Insulating film forming process In the insulating film forming process, the base member 310, the light-emitting element 301, and the electrodes 312a and 312b are covered with the insulating film 30. The insulating film 30 is preferably formed by atomic layer deposition. As an example of the insulating film 30, for example, aluminum oxide may be formed.

[0084] After the above-described preparation processes (2-1. Pre-mounting process, 2-2. Light-emitting element mounting process, 2-3. Insulating film forming process), an electrode exposure process is performed. <Electrode exposure process> The electrode exposure process of this embodiment is performed so as to expose the pad portions 322a and 322b of the electrodes 312a and 312b from the insulating film 30. That is, the insulating film 30 on the pad portions 322a and 322b is removed by irradiating laser light to the pad portions 322a and 322b. At this time, it is preferable to use pulsed laser as the laser light, and the pulse energy of the pulsed laser light is set, for example, in the range of 1 μJ or more and 1000 μJ or less, preferably 2 μJ or more and 300 μJ or less, more preferably 3 μJ or more and 100 μJ or less, and even more preferably 3 μJ or more and 10 μJ or less. Also, the pulse width of the laser light is set, for example, in the range of 100 femtoseconds or more and 2000 femtoseconds or less, preferably 100 femtoseconds or more and 1000 femtoseconds or less, and more preferably 100 femtoseconds or more and 500 femtoseconds or less. Thus, in the electrode exposure process of this embodiment, while the pad portions 322a and 322b of the electrodes 312a and 312b are exposed from the surface of the insulating film 30, the lead-out portions 332 (332a and 332b) of the electrodes 312a and 312b are not exposed from the insulating film 30. Therefore, since the surface roughness of the pad portions 322a and 322b is made larger than the surface roughness of the lead-out portions 332 (332a and 332b), when electrically connecting the pad portions 322a and 322b to the outside with, for example, solder, the adhesion between the pad portions 322a and 322b and the solder can be improved. Further, in the electrode exposure process, in order to completely expose the pad portions 322a and 322b in plan view, it is preferable to irradiate a region larger than the area of the pad portions 322a and 322b with laser light. By setting the irradiation region of the laser light in this way, a substrate exposure portion 312 where the substrate 311 is exposed can be formed. Since the surface roughness of the substrate exposure portion 312 is rougher than the surface roughness of the surface of the substrate 311 covered with the insulating film 30, the wettability of the surface is improved and it is easier to hold the solder on the pad portions when soldering the pad portions 322a and 322b. Note that in the electrode exposure process, it is preferable that the laser light scans so as to pass through at least once over the entire surface of the pad portions 322a and 322b in plan view. That is, the surfaces of the pad portions 322a and 322b may be roughened along the scanning direction of the laser light. For example, the pad portions 322a and 322b may have grooves formed linearly in the same direction, or may have grooves formed in a grid pattern.

[0085] As a preferable method for manufacturing a light-emitting element, it may include a frame forming step of forming a frame 350 surrounding the mounted light-emitting element 301. <Frame forming step> The frame 350 may be a thermosetting resin such as, for example, silicone resin, epoxy resin, or modified silicone resin. Further, aluminum oxide, titanium oxide, silicon oxide, or the like may be mixed into the thermosetting resin. The frame 350 may be formed, for example, by a method of drawing while discharging the resin with a dispenser, a resin printing method, transfer molding, or compression molding. By forming the frame 350 using such a method, when light is irradiated from the light-emitting element mounted inside the frame 350, it is possible to increase the amount of light by light reflection by the frame 350.

[0086] Here, the formation of the frame 350 may be performed after the formation of the insulating film 30. In this case, the insulating film 30 and the frame 350 have a positional relationship as shown in, for example, FIG. 9B. By forming the frame 350 on the insulating film 30 in this way, it is possible to improve the adhesion with the frame 350 as compared with the case of forming the frame on the metal.

[0087] Further, the formation of the frame 350 may be performed before the formation of the insulating film 30. In this case, the insulating film 30 and the frame 350 have a positional relationship as shown in, for example, FIG. 9C. By forming the insulating film 30 on the frame 350 in this way, it is possible to reduce the entry of moisture caused by moisture in the atmosphere or the like into the frame 350. For example, even if a phosphor that is vulnerable to moisture is used and the phosphor deteriorates and the components of the phosphor elute, corrosion of the electrodes can be suppressed.

[0088] As a preferable method for manufacturing a light-emitting element, after the frame forming step, a sealing step of sealing the region surrounded by the frame 350 may be further included. <Sealing Step> The sealing member 360 is preferably made of the above-described light-transmissive resin, and may further contain a phosphor (e.g., KSF phosphor or KSAF phosphor) and / or a light diffusing material (e.g., an inorganic material such as titanium oxide). Since the sealing member 360 before solidification has fluidity, a fluid material may be supplied to the region surrounded by the frame 350 and solidified after the supply to perform sealing. By sealing the mounting region with the sealing member 360 in this way, the light-emitting element 301 and conductive wires or the like that electrically connect the light-emitting element 301 can be protected. Further, by including a phosphor or a light diffusing material in the sealing member 360, the light-emitting performance of the light-emitting device can be enhanced.

[0089] Here, after the sealing step, the above-described insulating film forming step and electrode exposure step may be performed. In this case, the insulating film 30, the frame 350, and the sealing member 360 have a positional relationship as shown in FIG. 9D. By forming the insulating film 30 so as to cover the frame 350 and the sealing member 360 in this way, it is possible to reduce the entry of moisture caused by moisture in the atmosphere or the like into the frame 350 and the sealing member 360.

[0090] Further, as another embodiment of the method for manufacturing a light-emitting device, in the sealing step, a light-emitting device (FIG. 9E) in which the sealing member 360 is formed of a plurality of layers (e.g., two layers) and a material having lower moisture permeability than the inner sealing member 360 is used for the outer sealing member 360 may be manufactured. Further, as another method for manufacturing a light-emitting device, a light-emitting device (FIG. 9F) in which, after the sealing step, another frame forming step of forming another frame 350 on the sealing member and another sealing step of sealing the region surrounded by the other frame are performed may be manufactured. Further, as another method for manufacturing a light-emitting device, a light-emitting device (FIG. 9G) in which, after the sealing step, a moisture-permeability low light-transmissive member 370 (e.g., glass, fluororesin, etc.) is disposed directly or indirectly on the sealing member to reduce the entry of moisture into the light-emitting device may be manufactured.

[0091] The manufacturing method of the light-emitting device according to the present embodiment (a manufacturing method of a light-emitting device including a substrate member, an electrode, and a light-emitting element electrically connected to the electrode) has been described above. However, it may also be a "manufacturing method of a substrate member" using individual process elements of the above manufacturing method. That is, as the manufacturing method of the substrate member described in Embodiment 5, in the preparation step, a structure including an electrode having a pad portion connected to the outside and a lead portion drawn from the pad portion is prepared. In the electrode exposure step, the pad portions 322a and 322b may be exposed from the insulating film 30.

[0092] In addition, in the preparation step, a structure further including a frame surrounding the mounting region may be prepared. Also, in the preparation step, the frame 350 may be formed after forming the insulating film 30 (for example, the substrate member shown in FIG. 8B). Further, in the preparation step, the frame 350 may be formed before forming the insulating film 30 (for example, the substrate member shown in FIG. 8C).

[0093] The embodiments in the present disclosure have been described above. However, the present disclosure is not limited to these embodiments. As long as it includes the technical idea in the present disclosure, changes, additions, etc. of members can be made as appropriate.

[0094] 100, 200, 300 Light-emitting device 1, 101, 301 Light-emitting element 1a, 1b Element electrode 311a, 311b Conductive member 2, 342 Protection element 10 Mounting substrate 11 Substrate 12a, 12b, 112a, 112b External connection electrode 12aa, 112aa, 12bb, 112bb Extension portion 13a, 13b, 113a, 113b Element connection electrode 14a, 14b, 114a, 114b Through electrode 312a, 312b Electrode 322a, 322b Pad portion 332, 332a, 332b Lead portion 16 Heat dissipation portion 21a, 21b Connection member 30 Insulating film 110 Package 111 Ceramic substrate 310 Substrate member 311 Substrate 312 Substrate exposed part 350, 351, 352 Frame 360, 361, 362 Sealing member 370 Translucent member 150 Translucent cover 151 Spacer 230 Distributed Bragg reflector 230a, 230b Opening 230A, 230B Opening

Claims

1. A preparation step of preparing a structure including a substrate having a first surface and a second surface opposite to the first surface, an electrode disposed on the first surface of the substrate, and an insulating film covering the first surface, the second surface, and the electrode of the substrate; An electrode exposure step of irradiating a laser beam onto the insulating film on the electrode to expose the electrode from the insulating film, In the preparation step, the insulating film is a distributed Bragg reflector, includes at least one selected from the group consisting of silicon oxide, aluminum oxide, niobium oxide, tantalum oxide, aluminum nitride, silicon nitride, and silicon oxynitride, and is a dielectric multilayer film in which two or more dielectric films having different refractive indexes are alternately laminated, and has a reflectance of 70% or more in the range of 350 nm to 410 nm and a reflectance of 20% or less in the range of 500 nm to 535 nm; A method for manufacturing a substrate member, wherein in the electrode exposure step, the peak wavelength of the laser beam is set in the range of 500 nm or more and 535 nm or less, and the laser beam is irradiated.

2. A preparation step of preparing a structure including a ceramic body that forms a substrate by including a metal element in its constituent elements, an electrode disposed on a first surface of the ceramic body, and an insulating film covering the first surface and the electrode; An electrode exposure step of irradiating a laser beam that passes through the insulating film and is absorbed by the electrode from above the insulating film, and removing a part of the electrode so that the ceramic body directly below the electrode is not exposed from the electrode, thereby exposing the electrode from the insulating film; In the preparation step, the insulating film is a distributed Bragg reflector, includes at least one selected from the group consisting of silicon oxide, aluminum oxide, niobium oxide, tantalum oxide, aluminum nitride, silicon nitride, and silicon oxynitride, and is a dielectric multilayer film in which two or more dielectric films having different refractive indexes are alternately laminated, and has a reflectance of 70% or more in the range of 350 nm to 410 nm and a reflectance of 20% or less in the range of 500 nm to 535 nm; A method for manufacturing a substrate member, wherein in the electrode exposure step, the peak wavelength of the laser beam is set in the range of 500 nm or more and 535 nm or less, and the laser beam is irradiated.

3. The method for manufacturing a substrate member according to claim 1 or 2, wherein the pulse energy of the laser beam is set in the range of 1 μJ or more and 1000 J or less, and the laser beam is irradiated.

4. The method for manufacturing a substrate member according to any one of claims 1 to 3, wherein the pulse width of the laser light is set in a range of 100 femtoseconds or more and 2000 femtoseconds or less, and the substrate member is irradiated with the laser light.

5. The method for manufacturing a substrate member according to any one of claims 1 to 4, wherein the irradiation spot diameter of the laser light is set in a range of 15 μm or more and 60 μm or less, and the substrate member is irradiated with the laser light.

6. The method for manufacturing a substrate member according to claim 5, wherein the laser is scanned so that a part of the irradiation region of the laser light overlaps.

7. The method for manufacturing a substrate member according to claim 2 and any one of claims 3 to 6 that cite claim 2, wherein the laser light is irradiated so that the thickness of the electrode material to be removed on the surface of the electrode is 200 nm or less.

8. The method for manufacturing a substrate member according to any one of claims 1 to 7, wherein the surface of the electrode contains gold.

9. The method for manufacturing a substrate member according to claim 2 and any one of claims 3 to 8 that cite claim 2, wherein the ceramic body containing the metal element is either an aluminum nitride substrate or an aluminum oxide substrate.

10. In the preparation step, the electrode includes a pad portion connected to the outside and a lead portion drawn from the pad portion. The method for manufacturing a substrate member according to any one of claims 1 to 9, wherein in the electrode exposure step, the pad portion is exposed from the insulating film.

11. The method for manufacturing a substrate member according to any one of claims 1 to 10, wherein in the preparation step, a structure further including a frame body surrounding the mounting region is prepared.

12. The method for manufacturing a substrate member according to claim 11, wherein in the preparation step, the frame body is formed after the insulating film is formed.

13. The method for manufacturing a substrate member according to claim 11, wherein in the preparation step, the frame body is formed before the insulating film is formed.

14. A method for manufacturing a light-emitting device having a substrate member manufactured by the method according to any one of claims 1 to 13 and a light-emitting element electrically connected to the electrode, The method for manufacturing a light-emitting device further including a light-emitting element mounting step of electrically connecting the electrode and the light-emitting element in the preparation step or after the electrode exposure step. A method of manufacturing a light-emitting device, comprising: a substrate member manufactured by the method according to any one of claims 1 and 3 to 6, 8, and 10 to 13 that cite claim 1; and a light-emitting element electrically connected to the electrode. The method further includes a light-emitting element mounting step of electrically connecting the electrode and the light-emitting element in the preparation step or after the electrode exposure step. In the preparation step, an element connection electrode disposed on the second surface of the substrate and electrically connected to the electrode is further prepared. A method of manufacturing a light-emitting device, wherein in the light-emitting element mounting step, the element connection electrode and the light-emitting element are electrically connected.

16. A method of manufacturing a light-emitting device, comprising: a substrate member manufactured by the method according to any one of claims 1 to 10; and a light-emitting element electrically connected to the electrode. The method of manufacturing a light-emitting device includes a frame forming step of forming a frame surrounding the light-emitting element.

17. The method of manufacturing a light-emitting device according to claim 16 further includes a sealing step of sealing the region surrounded by the frame after the frame forming step.

18. The method of manufacturing a light-emitting device according to any one of claims 14 to 17, wherein the light-emitting element has a peak wavelength in the range of 280 nm to 410 nm.

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