Method of manufacturing a semiconductor device

Abstract

To provide a method for manufacturing a semiconductor device for enhancing the mass productivity of semiconductor devices by enhancing a yield of a manufacturing process of the semiconductor device.SOLUTION: A method manufactures a semiconductor device by performing the steps of: forming a metal oxide layer 20 on a manufacturing substrate 14; forming a resin layer on the metal oxide layer; and separating the metal oxide layer from the resin layer. In addition, it is desirable to heat the metal oxide layer and the resin layer in a laminated state. The metal oxide layer has gas (for example, water) containing one of or both of hydrogen and oxygen, and, for example, metal oxide. The resin layer has resin. The metal oxide layer and the resin layer are separated by breaking hydrogen bonds. Also, water precipitates on an interface between the metal oxide layer and the resin layer or in the vicinity of the interface by heating. The metal oxide layer and the resin layer are separated by a deterioration in adhesion caused by water existing on the interface or in the vicinity of the interface.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] One aspect of the present invention relates to a peeling method, a method for manufacturing a semiconductor device, and a method for manufacturing a display device. 。

[0002] Note that one aspect of the present invention is not limited to the above technical field. As for the technical field of one aspect of the present invention, semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (for example, touch sensors, etc.), input / output devices (for example, touch panels, etc.), and their driving methods, or their manufacturing methods can be cited as an example.

[0003] In this specification, etc., the semiconductor device generally refers to a device that can function by using semiconductor characteristics. Transistors, semiconductor circuits, display devices, light-emitting devices, input devices, input / output devices, arithmetic units, memory devices, etc. are one aspect of semiconductor devices. In addition, imaging devices, electro-optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.), and electronic devices may have semiconductor devices.

Background Art

[0004] Display devices to which organic EL (Electro Luminescence) elements or liquid crystal elements are applied are known. In addition, light-emitting devices including light-emitting elements such as light-emitting diodes (LED: Light Emitting ing Diode), and electronic paper that performs display by an electrophoretic method or the like can also be cited as an example of a display device. The basic configuration of an organic EL element is one in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes.

[0005] By applying a voltage to this element, light emission can be obtained from the light-emitting organic compound. ​​​ It is possible. A display device to which such an organic EL element is applied can achieve a thin, lightweight, high-contrast last and low-power consumption display device.

[0006] In addition, by forming semiconductor elements such as transistors and display elements such as organic EL elements on a flexible substrate (film), a flexible display device can be realized.

[0007] In Patent Document 1, a method of manufacturing a flexible display device is disclosed by irradiating a support substrate (glass substrate) provided with a heat-resistant resin layer and an electronic element via a sacrificial layer with laser light to peel off the heat-resistant resin layer from the glass substrate.

Prior Art Documents

Patent Documents

[0008]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0009] One aspect of the present invention is to provide a novel peeling method, a method of manufacturing a semiconductor device, or a method of manufacturing a display device. One aspect of the present invention is to provide a peeling method, a method of manufacturing a semiconductor device, or a method of manufacturing a display device that is low-cost and highly mass-producible. One aspect of the present invention is to provide a peeling method, a method of manufacturing a semiconductor device, or a method of manufacturing a display device that has a high yield. One aspect of the present invention is to provide a peeling method, a method of manufacturing a semiconductor device, or a method of manufacturing a display device that uses a large-sized substrate. One aspect of the present invention is to provide a peeling method, a method of manufacturing a semiconductor device, or a method of manufacturing a display device that is manufactured at a low temperature. One aspect of the present invention is to provide a peeling method, a method of manufacturing a semiconductor device, or a method of manufacturing a display device that manufactures a semiconductor device or a display device at a low temperature.

[0010] One aspect of the present invention aims to provide a display device with low power consumption. The present invention aims to provide a highly reliable display device as one of the problems. One aspect of the present invention aims to thin or lighten the display device as one of the problems. One aspect of the present invention aims to provide a display device having flexibility or having a curved surface as one of the problems. One aspect of the present invention aims to provide a display device that is difficult to break as one of the problems. One aspect of the present invention aims to provide a novel display device, input / output device, or electronic device, etc. as one of the problems.

[0011] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention is not necessarily required to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims .

Means for Solving the Problems

[0012] One aspect of the present invention is a method for manufacturing a semiconductor device, which includes a step of forming a first material layer on a substrate, a step of forming a second material layer on the first material layer, and a step of separating the first material layer and the second material layer. The first material layer contains a gas containing one or both of hydrogen and oxygen. As the gas, for example, water is preferable. The second material layer contains a resin. The first material layer and the second material layer are separated by breaking the hydrogen bond. As the hydrogen bond , for example, the hydrogen bond between the gas contained in the first material layer and the second material layer can be mentioned . The first material layer is preferably formed so that its adhesion to the second material layer is lower than that to the substrate .

[0013] Alternatively, one aspect of the present invention includes a method for forming a first material layer on a substrate, forming a second material layer on the first material layer, and forming a second material layer; heating the first material layer and the second material layer in a laminated state; and separating the first material layer from the second material layer. The first material layer includes a gas that includes one or both of hydrogen and oxygen. The gas is preferably water, for example. The second material layer includes a resin. In the case of the first material layer, water is precipitated at or near the interface between the first material layer and the second material layer. The adhesion between the first material layer and the second material layer is reduced due to water present at or near the interface. The separation is achieved by

[0014] The first material layer may be titanium, molybdenum, aluminum, tungsten, silicon, indium, etc. The semiconductor device is formed having one or more of the following: aluminum, zinc, gallium, tantalum, and tin. It is preferable that the first material layer contains one or both of titanium and titanium oxide. The first material layer is preferably formed so as to have a laminated structure of titanium and titanium oxide. It is preferable that the insulating layer is formed so as to have the following structure:

[0015] The second material layer is formed to have a region having a thickness of 0.1 μm or more and 5 μm or less. is preferred.

[0016] The second layer of material is formed having a residue of a compound represented by formula (100). is preferred.

[0017] [ka]

[0018] The step of separating the first material layer and the second material layer is preferably performed while supplying a liquid to the separation interface. The liquid preferably contains water.

[0019] In the step of forming the first material layer, a metal layer may be formed on a substrate, and a metal oxide layer may be formed by performing plasma treatment on the surface of the metal layer. In the plasma treatment, it is preferable to expose the surface of the metal layer to an atmosphere containing one or both of oxygen or water vapor (H2O).

[0020] One aspect of the present invention is a method for manufacturing a semiconductor device, which includes forming a metal oxide layer on a substrate, forming a first layer using a material containing a resin or a resin precursor on the metal oxide layer, performing a heat treatment on the first layer to form a resin layer, and separating the metal oxide layer and the resin layer.

[0021] A metal oxide layer may be formed by forming a metal layer on a substrate and performing plasma treatment on the surface of the metal layer. In the plasma treatment, it is preferable to expose the surface of the metal layer to an atmosphere containing one or both of oxygen or water vapor (H2O).

[0022] Alternatively, the first layer may be formed after performing plasma treatment on the surface of the metal oxide layer. In the plasma treatment, it is preferable to expose the surface of the metal oxide layer to an atmosphere containing one or more of oxygen, hydrogen, or water vapor (H2O).

[0023] Alternatively, a metal oxide layer may be formed by forming a metal layer on a substrate and heating the metal layer in an atmosphere containing oxygen.

[0024] Alternatively, the first layer may be formed after heating the metal oxide layer in an atmosphere containing oxygen. ​

[0025] The heat treatment for the first layer may be performed in an air atmosphere. Or, the heat treatment may be performed while flowing a gas containing oxygen.

[0026] It is preferable to separate the metal oxide layer and the resin layer while supplying a liquid containing water to the separation interface. The contact angle of the metal oxide layer with the liquid is preferably greater than 0° and 60° or less. Preferably.

[0027] The resin layer is preferably formed so as to have a region with a thickness of 0.1 μm or more and 5 μm or less. Preferably.

Advantages of the Invention

[0028] According to one aspect of the present invention, a novel peeling method, a method for manufacturing a semiconductor device, or a method for manufacturing a display device can be provided. According to one aspect of the present invention, a peeling method, a method for manufacturing a semiconductor device, or a method for manufacturing a display device with low cost and high mass productivity can be provided. According to one aspect of the present invention, a peeling method with high yield can be provided. According to one aspect of the present invention, a semiconductor device or a display device can be manufactured using a large-sized substrate. According to one aspect of the present invention, a semiconductor device or a display device can be manufactured at a low temperature. According to one aspect of the present invention, a display device with low power consumption can be provided. According to one aspect of the present invention, a highly reliable display device can be provided. According to one aspect of the present invention, the display

[0029] device can be thinned or lightened. According to one aspect of the present invention, a display device having flexibility or a curved surface can be provided. According to one aspect of the present invention, a display device that is difficult to break can be provided. Or, a curved surface can be provided. According to one aspect of the present invention, a display device that is difficult to break can be provided. Preferably, a display device having a curved surface can be provided. According to one aspect of the present invention, a display device that is difficult to break can be provided. A display device can be provided. According to one aspect of the present invention, a novel display device, input / output device , or an electronic device, etc. can be provided.

[0030] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. From the description of the specification, drawings, and claims , it is possible to extract other effects.

Brief Description of the Drawings

[0031]

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Mode for Carrying Out the Invention

[0032] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. Without departing from the spirit and scope of the present invention, it can be easily understood by those skilled in the art that the form and details can be variously changed. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. Among the configurations of the invention described below, the same parts or parts having the same functions are commonly used with the same reference numerals between different drawings, and the repeated description thereof is omitted. Also, when referring to the same function, the hatch pattern may be the same and may not be particularly labeled. In the configurations of the invention described below, the same parts or parts having the same functions are commonly used with the same reference numerals between different drawings, and the repeated description thereof is omitted. Also, when referring to the same function, the hatch pattern may be the same and may not be particularly labeled.

[0033] In addition, in the configurations of the invention described below, for the same parts or parts having the same functions, the same reference numerals are commonly used between different drawings, and the repeated description thereof is omitted. Also, when referring to the same function, the hatch pattern may be the same and may not be particularly labeled. Among the configurations of the invention described below, the same parts or parts having the same functions are commonly used with the same reference numerals between different drawings, and the repeated description thereof is omitted. Also, when referring to the same function, the hatch pattern may be the same and may not be particularly labeled. When referring to the same function, the hatch pattern may be the same and may not be particularly labeled.

[0034] In addition, the position, size, range, etc. of each configuration shown in the drawings are, for the sake of easy understanding, actually It may not represent the position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0035] In addition, the terms "film" and "layer" may, in some cases or depending on the situation, be interchangeable with each other. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0036] In this specification, etc., a metal oxide is an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), and oxide semiconductors (also referred to as Oxide Semiconductor or simply OS). For example, when a metal oxide is used for the semiconductor layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when described as an OS FET, it can be paraphrased as a transistor having a metal oxide or an oxide semiconductor.

[0037] Also, in this specification, etc., a metal oxide having nitrogen may also be collectively referred to as a metal oxide (metal oxi de). Further, a metal oxide having nitrogen may be referred to as a metal oxynitride (met al oxynitride).

[0038] (Embodiment 1) In this embodiment, a peeling method and a manufacturing method of a display device according to an aspect of the present invention will be described with reference to FIGS. 1 to FIGS. 18.

[0039] In this embodiment, a display device having a transistor and an organic EL element (active matrix The display device has a substrate that is made of a flexible substrate. By using a flexible material, a flexible device can be obtained. One aspect of the invention is a light-emitting device, a display device, and an input / output device (such as a touch panel) using an organic EL element. The present invention is not limited to semiconductor devices, light-emitting devices, display devices, and input / output devices using other functional elements. The present invention can be applied to various devices such as an output device.

[0040] In this embodiment, first, a first material layer, here a metal oxide layer, is formed on a substrate. Then, a second material layer, here a resin layer, is formed on the metal oxide layer. or a material containing a resin precursor, forming a first layer, and subjecting the first layer to a heat treatment. The resin layer is then separated from the metal oxide layer.

[0041] In this embodiment mode, a base layer (also called a base layer) is formed between the substrate and the resin layer. The undercoat layer is a layer that has lower adhesion (bonding) to the resin layer than the substrate. The following description will be given taking as an example a case where a metal oxide layer is used as the underlayer, but the present invention is not limited thereto. .

[0042] The heat treatment can reduce the adhesion (bonding) between the metal oxide layer and the resin layer.

[0043] An example of the principle of separating a metal oxide layer from a resin layer will be described with reference to FIGS.

[0044] First, the bond between the metal oxide layer 20 and the resin layer 23 will be described with reference to FIG.

[0045] In FIG. 1, a metal oxide layer 20 and a resin layer 23 are laminated. Note that the resin layer 23 shown in FIG. 1 may be the first layer (before heating).

[0046] It is considered that a bond is formed between the metal oxide layer 20 and the resin layer 23 (or the first layer). Specifically, chemical bonds such as covalent bonds, ionic bonds, and hydrogen bonds are formed between the metal oxide layer 20 and the resin layer 23 (or the first layer).

[0047] In step (i) of FIG. 1, an example is shown in which the metal M included in the metal oxide layer 20 and the carbon C included in the resin layer 23 are bonded by oxygen O.

[0048] By heating the laminated structure of the metal oxide layer 20 and the resin layer 23 (or the first layer), the reaction of formula (1) (see below and FIG. 1) occurs. By performing the heat treatment, H2O (water vapor) breaks the bond of M - O - C. Then, the bond between the metal oxide layer 20 and the resin layer 23 is changed to a hydrogen bond.

[0049] M - O - C + H2O → M - OH + C - OH ··· (1)

[0050] In step (ii) of FIG. 1, an example is shown in which the metal M included in the metal oxide layer 20 and oxygen O are bonded, and the carbon C included in the resin layer 23 and another oxygen O are bonded. The two oxygens respectively form covalent bonds with different hydrogens. Also, the two oxygens respectively form hydrogen bonds with the hydrogens bonded to the other oxygen.

[0051] Since the hydrogen bond is an extremely weak bond compared to the covalent bond, it can be easily broken. Therefore, the metal oxide layer 20 and the resin layer 23 can be easily separated by physical force. ​​​​​​​​​​​It is possible.

[0052] In step (iii) of FIG. 1, the oxygen and hydrogen that were hydrogen-bonded are separated, and an example is shown where the metal oxide layer 20 and the resin layer 23 are separated. The metal M and oxygen O in the metal oxide layer 20 are bonded, and the carbon C in the resin layer 23 and another oxygen O are bonded. The two oxygens are each forming a covalent bond with another hydrogen. As described above, by heating the laminated structure of the metal oxide layer 20 and the resin layer 23 (or the first layer), H2O changes the strong bond between the metal oxide layer 20 and the resin layer 23 (or the first layer) to a weak hydrogen bond. Thereby, the force required for separating between the metal oxide layer 20 and the resin layer 23 can be reduced. The carbon C in the resin layer 23 and another oxygen O are bonded. The two oxygens are each forming a covalent bond with another hydrogen. are each forming a covalent bond with another hydrogen.

[0053] As described above, by heating the laminated structure of the metal oxide layer 20 and the resin layer 23 (or the first layer), H2O changes the strong bond between the metal oxide layer 20 and the resin layer 23 (or the first layer) to a weak hydrogen bond. Thereby, the force required for separating between the metal oxide layer 20 and the resin layer 23 can be reduced. between the metal oxide layer 20 and the resin layer 23 The force required for separation can be reduced.

[0054] Next, with reference to FIG. 2, the action (hereinafter referred to as the inhibitory action) by which H2O inhibits the adhesion between the metal oxide layer 20 and the resin layer 23 will be described. will be described.

[0055] In FIG. 2, a metal oxide layer 20 is provided on the production substrate 14, and a resin layer 23 is provided on the metal oxide layer 20. is provided.

[0056] At the interface between the metal oxide layer 20 and the resin layer 23, and in one or both of the metal oxide layer 20, one or more of H2O, hydrogen (H), oxygen (O), hydroxyl group (OH), hydrogen radical (H ), oxygen radical (O * ), oxygen radical (O ), hydroxyl radical (OH * ) are present. * ) are present. These can be supplied by a film formation process of the metal oxide layer 20, an addition (dope) process after the film formation of the metal oxide layer 20, and the like. In step (i) of FIG. 2, between the metal oxide layer 20 and the resin layer 20 and the resin At the interface with the lipid layer 23 and in the metal oxide layer 20, there are H2O, H, O, etc. respectively. An example is shown.

[0057] At the interface between the metal oxide layer 20 and the resin layer 23, and the H and O supplied into the metal oxide layer 20 , H2O, etc. may precipitate as H2O at this interface in the process of solidifying (curing, hardening) the resin layer 23 (for example, polyimide, etc.). In the process (for example, heating at 350 °C). In this case, the H2O precipitated at the interface between the metal oxide layer 20 and the resin layer 23 may inhibit the adhesion between the metal oxide layer 20 and , the resin layer 23. That is, the H2O precipitated at the interface between the metal oxide layer 20 and the resin layer 2 3 has an effect of inhibiting adhesion (inhibiting effect). In step (ii) of FIG. 2, an example where the H2O in the metal oxide layer 20 precipitates at the interface between the metal oxide layer 20 and the resin layer 23 is shown. Also, in step (ii) of FIG. 2, an example where the hydrogen and hydroxyl groups (OH) in the metal oxide layer 20 precipitate as H2O at the interface between the metal oxide layer 20 and the resin layer 23 is shown. In step (ii) of FIG. 2, an example where the H2O in the metal oxide layer 20 precipitates at the interface between the metal oxide layer 20 and the resin layer 23 is shown. Also, in step (ii) of FIG. 2, an example where the water element and hydroxyl group (OH) in the metal oxide layer 20 precipitate as H2O at the interface between the metal oxide layer 20 and the resin layer 23 is shown. An example where the hydrogen and hydroxyl groups (OH) in the metal oxide layer 20 precipitate as H2O at the interface between the metal oxide layer 20 and the resin layer 23 is shown. An example where the hydrogen and hydroxyl groups (OH) in the metal oxide layer 20 precipitate as H2O at the interface between the metal oxide layer 20 and the resin layer 23 is shown.

[0058] In step (iii) of FIG. 2, an example where the metal oxide layer 20 and the resin layer 23 are separated is shown. By heating, H2O becomes water vapor and the volume expands. As a result, the adhesion between the metal oxide layer 20 and the resin layer 23 weakens, and separation can occur between the metal oxide layer 20 and the resin layer 23. The adhesion between the metal oxide layer 20 and the resin layer 23 weakens, and separation can occur between the metal oxide layer 20 and the resin layer 23. Next, the reaction shown in the above formula (1) and the H2O related to the above inhibiting effect will be described.

[0059] Next, the reaction shown in the above formula (1) and the H2O related to the above inhibiting effect will be described.

[0060] H2O may be present in the metal oxide layer 20, in the resin layer 23, and at the interface between the metal oxide layer 20 and the resin layer 23, etc. An example where the hydrogen and hydroxyl groups (OH) in the metal oxide layer 20 precipitate as H2O at the interface between the metal oxide layer 20 and the resin layer 23 is shown.

[0061] In addition, in the metal oxide layer 20, in the resin layer 23, and at the interface between the metal oxide layer 20 and the resin layer 23 Hydrogen (H), oxygen (O), hydroxyl group (OH), hydrogen radical (H * ), Oxygen radical (O * ), hydroxyl radical (OH * ) etc., when heated, become H2O. There is a match.

[0062] The inside of the metal oxide layer 20, the surface of the metal oxide layer 20 (the surface in contact with the resin layer 23), or the At the interface between the metal oxide layer 20 and the resin layer 23 (or the first layer), H2O, hydrogen (H), oxygen ( O), hydroxyl group (OH), hydrogen radical (H * ), oxygen radical (O * ), hydroxyradi Cal (OH * It is preferable to add one or more of the following:

[0063] In the peeling method according to one embodiment of the present invention, the reaction of the above-described formula (1) and the above-described inhibitory action occur. In this case, the adhesion between the metal oxide layer 20 and the resin layer 23 may be further improved. In other words, the peelability between the metal oxide layer 20 and the resin layer 23 can be further increased. It is estimated that this is possible.

[0064] In the metal oxide layer 20, in the resin layer 23, and at the interface between the metal oxide layer 20 and the resin layer 23, etc. , HO, hydrogen (H), oxygen (O), hydroxyl group (OH), hydrogen radical (H * ), oxygen radio Cal (O * ), hydroxyl radical (OH * It is preferable that the aryl group has a large amount of aryl groups such as aryl, ... By adding more H2O, the reaction can be promoted and the force required for separation can be reduced. can.

[0065] For example, when forming the metal oxide layer 20, it is preferable to include a large amount of H2O, hydrogen, oxygen, hydroxyl groups, hydrogen radicals (H ), oxygen radicals (O * ), * ), , hydroxyl radicals (OH * ), etc. in the metal oxide layer 20 or on the surface of the metal oxide layer 2

[0066] Specifically, it is preferable to form a metal layer and perform radical treatment on the surface of the metal layer to form the metal oxide layer 2 0. In the radical treatment, it is preferable to expose the surface of the metal layer to an atmosphere containing at least one of oxygen radicals and hydroxyl radicals . For example, it is preferable to perform plasma treatment in an atmosphere containing one or both of oxygen or water vapor (H2O).

[0067] Alternatively, it is preferable to form the metal oxide layer 20 and perform radical treatment on the surface of the metal oxide layer 20 . In the radical treatment, it is preferable to expose the surface of the metal oxide layer 20 to an atmosphere containing at least one of oxygen radicals, hydrogen radicals, and hydroxyl radicals . For example, it is preferable to perform plasma treatment in an atmosphere containing one or more of oxygen, hydrogen, or water vapor (H2O).

[0068] The radical treatment can be performed using a plasma generator or an ozone generator

[0069] For example, oxygen plasma treatment, hydrogen plasma treatment, water plasma treatment, ozone treatment, etc. can be performed . Oxygen plasma treatment can be performed by generating plasma in an atmosphere containing oxygen . Hydrogen plasma treatment can be performed by generating plasma in an atmosphere containing hydrogen ​​This can be achieved by generating plasma in an atmosphere containing water vapor (H2O). In particular, by performing water plasma treatment, a large amount of moisture can be incorporated into the surface or interior of the metal oxide layer 20, which is preferable.

[0070] Plasma treatment may be performed in an atmosphere containing two or more of oxygen, hydrogen, water (water vapor), and an inert gas (typically argon). Examples of such plasma treatment include plasma treatment in an atmosphere containing oxygen and hydrogen, plasma treatment in an atmosphere containing oxygen and water, plasma treatment in an atmosphere containing water and argon, plasma treatment in an atmosphere containing oxygen and argon, or plasma treatment in an atmosphere containing oxygen, water, and argon. Using argon gas as one of the plasma treatment gases is preferable because it enables plasma treatment without damaging the metal layer or the metal oxide layer 20. Two or more plasma treatments may be continuously performed without exposing them to the atmosphere. For example, water plasma treatment may be performed after argon plasma treatment.

[0071]

[0072] As a result, as shown in FIG. 3, hydrogen, oxygen, hydrogen radicals (H * ), oxygen radicals (O * ), hydroxyl radicals (OH * ), etc. can be incorporated into the surface or interior of the metal oxide layer 20. Further, FIG. 3 shows an example in which the resin layer 23 contains hydrogen (H) bonded to carbon (C) and hydroxyl groups (OH). It is conceivable that these will become H2O upon heating.

[0073] ​​​​​​​​​​​The heat treatment is preferably carried out in an atmosphere containing oxygen. By heating the first layer in an atmosphere sufficiently containing oxygen, a resin layer 23 rich in oxygen can be formed. The more the resin layer 23 contains oxygen, the easier it is to separate the resin layer 23 from the metal oxide layer 20.

[0074] For example, the heat treatment can be carried out while flowing a gas containing oxygen.

[0075] The heat treatment is more preferably carried out in the air atmosphere. By heating the first layer in the air atmosphere, a resin layer 23 rich in oxygen and moisture can be formed. The more the resin layer 23 contains oxygen and moisture, the easier it is to separate the resin layer 23 from the metal oxide layer 20. By heating the first layer in the air atmosphere (without flowing a gas), it may be possible to form a resin layer 23 containing more moisture than in the case of carrying out the heat treatment while flowing a gas. The moisture in the resin layer 23 may have the effect of reducing the adhesion or adhesiveness between the resin layer 23 and the metal oxide layer 20. For example, the moisture may have the effect of weakening or cutting the bond between the resin layer 23 and the metal oxide layer 20.

[0076] Before or during the separation, it is preferable to supply a liquid containing water to the separation interface. The presence of water at the separation interface can further lower the adhesion or adhesiveness between the resin layer 23 and the metal oxide layer 20 and reduce the force required for separation. Also, by supplying a liquid containing water to the separation interface, it may have the effect of weakening or cutting the bond between the resin layer 23 and the metal oxide layer 20. Utilizing the chemical bond with the liquid, between the resin layer 23 and the metal oxide layer 20

[0077] it is possible to lower the adhesion or adhesiveness between the resin layer 23 and the metal oxide layer 20 and reduce the force required for separation. Also, by supplying a liquid containing water to the separation interface, it may have the effect of weakening or cutting the bond between the resin layer 23 and the metal oxide layer 20. Utilizing the chemical bond with the liquid, between the resin layer 23 and the metal oxide layer 20 it may have the effect of weakening or cutting the bond between the resin layer 23 and the metal oxide layer 20. Using the chemical bond with the liquid, between the resin layer 23 and the metal oxide layer 20 The connection therebetween can be severed to allow separation to proceed. For example, when a hydrogen bond is formed between the resin layer 23 and the metal oxide layer 2 0, if a liquid containing water is supplied, hydrogen bonds are formed between the water and the resin layer 23 or the metal oxide layer 20, and it is conceivable that the hydrogen bond between the resin layer 23 and the metal oxide layer 20 is broken.

[0078] The metal oxide layer 20 preferably has a low surface tension and a high wettability with respect to the liquid containing water. Thereby, the liquid containing water can be spread over the entire surface of the metal oxide layer 20, and the liquid containing water can be easily supplied to the separation interface. When water spreads over the entire metal oxide layer 20, uniform peeling can be achieved.

[0079] The contact angle of the metal oxide layer 20 with respect to the liquid containing water is preferably greater than 0° and equal to or less than 60°, more preferably greater than 0° and equal to or less than 50°. Note that when the wettability with respect to the liquid containing water is extremely high (for example, when the contact angle is about 20° or less), it may be difficult to obtain the exact value of the contact angle. The higher the wettability of the metal oxide layer 20 with respect to the liquid containing water, the more suitable it is. Therefore, even if the wettability with respect to the liquid containing water is high to the extent that the exact value of the contact angle cannot be obtained, it is still good.

[0080] The presence of the liquid containing water at the separation interface can suppress the electrostatic charge generated during separation from having an adverse effect on the functional elements contained in the layer to be peeled (such as the semiconductor element being destroyed by electrostatic charge). Alternatively, an ionizer or the like can be used to neutralize the surface of the layer to be peeled exposed by separation.

[0081] When a liquid is supplied to the separation interface, the surface of the layer to be peeled exposed by separation may be dried.

[0082] The temperature of the substrate during separation can be room temperature, but is not limited thereto. Before or during separation, the temperature of the substrate can be higher than room temperature and 200 °C or lower, preferably 100 °C or higher and 200 °C or lower. For example, the substrate may be heated to 130 °C or higher and 200 °C or lower. By increasing the temperature of the substrate above room temperature, the action of water can be enhanced, and the force required for separation may be reduced. When peeling with physical force (also referred to as mechanical energy), peeling by increasing the temperature of the substrate (heating the substrate for peeling) can further enhance the peelability. That is, peeling by increasing the temperature of the substrate exhibits an effect as an assist action for enhancing the peelability. For example, the resin layer and the metal oxide layer may be separated while heating at least a part of the substrate. Also, during or after separation, the peeled layer separated from the substrate may be cooled. The resin layer and the metal oxide layer may be separated while supplying a liquid at room temperature or higher and 100 °C or lower. Before separation, it is preferable to store the substrate on which the resin layer is formed in a high-humidity environment, more preferably in a high-temperature and high-humidity environment. In particular, by storing in a state where the starting point of separation is formed and a part of the separation interface is exposed, moisture can be efficiently supplied to the separation interface. Thereby, the force required for separation can be reduced. Specifically, the humidity of the storage environment is preferably 50% or higher and 100% or lower, more preferably 70% or higher and 100% or lower. The temperature of the storage environment is preferably higher than room temperature and 100 °C or lower, more preferably 50 °C or higher and 70 °C or lower.

[0083]

[0084]

[0085]

[0086] Similarly, it is preferable to perform the separation in a high humidity environment, more preferably in a high temperature and high humidity environment. This enables the supply of moisture to the separation interface and may reduce the force required for separation.

[0087] In this embodiment, by controlling the formation conditions of the metal oxide layer and the resin layer, etc., the metal oxide layer and the resin layer can be easily separated. That is, in order to enhance the peelability of the resin layer, the step of irradiating the entire surface of one side of the resin layer with laser light is unnecessary.

[0088] When irradiating the entire surface of one side of the resin layer with laser light, it is preferable to use a linear laser beam, but the laser device for irradiating the linear laser beam is expensive itself and has high running costs. In this embodiment, since the laser device is unnecessary, the cost can be significantly reduced. Also, it is easy to apply to large-sized substrates.

[0089] Also, when irradiating the resin layer with laser light through the substrate, if foreign matter such as dust adheres to the light-irradiating surface of the substrate, non-uniformity of light irradiation occurs and a portion with low peelability is generated in the resin layer, and the yield of the step of separating the resin layer and the substrate may decrease. In this embodiment, the peelability of the resin layer is enhanced by heat treatment. Since uneven heating is less likely to occur in the resin layer even if foreign matter adheres to the substrate, the yield of the step of separating the resin layer and the substrate is less likely to decrease.

[0090] Since there is no step of irradiating the entire surface of one side of the resin layer with laser light through the substrate, damage to the substrate caused by laser light irradiation can be prevented. Even if the substrate is used once, its strength is less likely to decrease, so the substrate can be reused and the cost can be reduced.

[0091] ​​​ Alternatively, in this embodiment, first, a metal oxide layer is formed on a substrate. Next, a first layer is formed on the metal oxide layer using a material containing a resin or a resin precursor. Next, a resin layer is formed by performing a heat treatment on the first layer. Next, an insulating layer that covers the ends of the resin layer is formed on the substrate and on the resin layer. Next, a transistor having a metal oxide in the channel formation region is formed on the resin layer via the insulating layer. Next, at least a part of the resin layer is separated from the metal oxide layer to form a separation starting point. Then, the metal oxide layer and the resin layer are separated. A portion where the resin layer contacts and a portion where the insulating layer contacts are provided on the substrate. The insulating layer is provided to cover the ends of the resin layer. The insulating layer has higher adhesion or adhesiveness to the metal oxide layer than the resin layer. By providing the insulating layer to cover the ends of the resin layer, it is possible to prevent the resin layer from being unintentionally peeled off from the substrate. For example, it is possible to prevent the resin layer from peeling off during conveyance of the substrate. And by forming a separation starting point, the metal oxide layer and the resin layer can be separated at a desired timing. That is, in this embodiment, the timing of separation between the metal oxide layer and the resin layer can be controlled, and the force required for separation is small. As a result, the yield of the separation process between the metal oxide layer and the resin layer and the manufacturing process of the display device can be increased.

[0092] In the display device of this embodiment, it is preferable that the channel formation region of the transistor has a metal oxide. The metal oxide can function as an oxide semiconductor.

[0093]

[0094] ​​​​​​​​​​When using low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) in the channel formation region of a transistor, a temperature of about 500°C to 550°C needs to be applied, so the resin layer is required to have heat resistance. Also, in order to mitigate the damage in the laser crystallization process, thickening of the resin layer may be necessary. When using low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) in the channel formation region of a transistor, a temperature of about 500°C to 550°C needs to be applied, so the resin layer is required to have heat resistance. Also, in order to mitigate the damage in the laser crystallization process, thickening of the resin layer may be necessary. When using low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) in the channel formation region of a transistor, a temperature of about 500°C to 550°C needs to be applied, so the resin layer is required to have heat resistance. Also, in order to mitigate the damage in the laser crystallization process, thickening of the resin layer may be necessary. When using low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) in the channel formation region of a transistor, a temperature of about 500°C to 550°C needs to be applied, so the resin layer is required to have heat resistance. Also, in order to mitigate the damage in the laser crystallization process, thickening of the resin layer may be necessary.

[0095] On the other hand, a transistor using a metal oxide in the channel formation region can be formed at 350°C or lower, and further at 300°C or lower. Therefore, high heat resistance is not required for the resin layer. On the other hand, a transistor using a metal oxide in the channel formation region can be formed at 350°C or lower, and further at 300°C or lower. Therefore, high heat resistance is not required for the resin layer. Therefore, the heat resistance temperature of the resin layer can be lowered, and the range of material selection is widened. Also, a transistor using a metal oxide in the channel formation region does not require the laser crystallization process, so the thickness of the resin layer can be reduced. Since high heat resistance is not required for the resin layer and it can be made thinner, a significant cost reduction in device fabrication can be expected. Also, compared with the case of using LTPS, the process can be simplified, which is preferable. the process can be simplified, which is preferable.

[0096] However, the display device according to one aspect of the present invention is not limited to a configuration having a metal oxide in the channel formation region of the transistor. For example, in the display device of the present embodiment, silicon can be used in the channel formation region of the transistor. As the silicon, amorphous silicon However, the display device according to one aspect of the present invention is not limited to a configuration having a metal oxide in the channel formation region of the transistor. For example, in the display device of the present embodiment, silicon can be used in the channel formation region of the transistor. As the silicon, amorphous silicon However, the display device according to one aspect of the present invention is not limited to a configuration having a metal oxide in the channel formation region of the transistor. For example, in the display device of the present embodiment, silicon can be used in the channel formation region of the transistor. As the silicon, amorphous silicon or crystalline silicon can be used. As the crystalline silicon, microcrystalline silicon or crystalline silicon can be used. As the crystalline silicon, microcrystalline silicon,

[0097] polycrystalline silicon, single-crystalline silicon, etc. can be mentioned. It is preferable to use LTPS in the channel formation region. Polycrystalline silicon such as LTPS can be formed at a lower temperature compared to single-crystalline silicon and has higher It has a high field-effect mobility and high reliability.

[0098] The thickness of the resin layer may be 0.1 μm or more and 5 μm or less. By forming the resin layer thinly, a display device can be manufactured at low cost. Also, the display device can be made lighter and thinner. In addition, the flexibility of the display device can be enhanced.

[0099] In this embodiment, transistors and the like are formed at a temperature equal to or lower than the heat resistance temperature of the resin layer. The resin layer heat resistance can be evaluated, for example, by the weight loss rate due to heating, specifically, the 5% weight loss temperature, etc. In the peeling method and the manufacturing method of the display device of this embodiment, the maximum temperature during the process can be lowered. For example, in this embodiment, the 5% weight loss temperature of the resin layer is 200 °C or higher 650 °C or lower, 200 °C or higher and 500 °C or lower, 200 °C or higher and 400 °C or lower, or 200 °C or higher and 350 °C or lower. Therefore, the range of material selection is widened. Note that the 5% weight loss temperature of the resin layer may be higher than 650 °C.

[0100] Hereinafter, the manufacturing method of the display device of this embodiment will be specifically described.

[0101] Note that the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device are formed by sputtering, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Depositio n) method, atomic layer deposition (ALD: Atomic Layer Deposition) method, etc. can be used. As the CVD method, plasma enhanced chemical vapor deposition (PECVD : Plasma Enhanced Chemical Vapor Depositi It may also be a thermal CVD method. As an example of the thermal CVD method, metal organic chemical vapor deposition (MO CVD) method may be used.

[0102] The thin films (such as insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating and other methods. It can be formed by.

[0103] When processing the thin films constituting the display device, it can be processed using a lithography method or the like. Alternatively, island-shaped thin films may be formed by a film formation method using a shadow mask. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, etc. As the photolithography method, a resist mask is formed on the thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed. And a method of forming a photosensitive thin film and then performing exposure and development to process the thin film into a desired shape. There are.

[0104] When using light in the lithography method, the light used for exposure is, for example, i-line (wavelength 365 n m), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these lights. In addition, ultraviolet light, KrF laser light, or ArF laser light can also be used. In addition, exposure may be performed by immersion exposure technology. Also, as the light used for exposure, extreme ultraviolet light (EUV: Extreme Ultra-violet) or X-rays It may also be used. Further, instead of the light used for exposure, an electron beam can also be used. When extreme ultraviolet light, X-rays, or an electron beam is used, extremely fine processing becomes possible, which is preferable. When exposure is performed by scanning a beam such as an electron beam, a photomask is unnecessary.

[0105] For the etching of the thin film, a dry etching method, a wet etching method, a sandblasting method, etc. can be used.

[0106] [Peeling method] First, a metal oxide layer 20 is formed on the production substrate 14 (Fig. 4(A1)). Alternatively, a metal layer 19 and a metal oxide layer 20 are laminated on the production substrate 14 (Fig. 4(A2)).

[0107] The production substrate 14 has rigidity to such an extent that it can be easily transported and has heat resistance with respect to the temperature involved in the production process. Examples of materials that can be used for the production substrate 14 include glass, quartz, ceramic, sapphire, resin, semiconductor, metal, or alloy. Examples of glass include non-alkali glass, barium borosilicate glass, aluminoborosilicate glass, etc.

[0108] As described above, in the present embodiment, an underlayer is formed between the production substrate 14 and the resin layer 23. The underlayer is a layer having lower adhesion (adhesiveness) to the resin layer 23 than the production substrate 14. In the present embodiment, the case of using the metal oxide layer 20 will be described as an example, but it is not limited thereto.

[0109] Specifically, the underlayer includes titanium, molybdenum, aluminum, tungsten, silicon ​​​​​​​​​, indium, zinc, gallium, tantalum, tin, hafnium, yttrium, zirconium, magnesium, lanthanum, cerium, neodymium, bismuth, and niobium, one or more of which can be used. The underlayer can include metals, alloys, and their compounds (such as metal oxides). The underlayer preferably has one or more of titanium, molybdenum, aluminum, tungsten, silicon, indium, zinc, gallium, tantalum, and tin. Further, the material of the underlayer is not limited to inorganic materials, and organic materials may also be used. For example, various organic materials that can be used for the EL layer of an organic EL element may be used. As the underlayer, a vapor deposition film of these organic materials can be used. Thereby, a film with low adhesion can be formed. For the metal layer 19, various metals, alloys, etc. can be used. For the metal oxide layer 20, metal oxides of various metals can be used. Examples of the metal oxide include titanium oxide (TiO ), molybdenum oxide, aluminum oxide, tungsten oxide, indium tin oxide (ITSO) containing silicon, indium zinc oxide, In-Ga-Zn oxide, etc. In addition, examples of the metal oxide include indium oxide, indium oxide containing titanium, indium oxide containing tungsten, indium tin oxide (ITO), ITO containing titanium, indium zinc oxide containing tungsten, zinc oxide (ZnO), ZnO containing gallium, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, etc.

[0110] Moreover, the material of the underlayer is not limited to inorganic materials, and organic materials may also be used. For example, various organic materials that can be used for the EL layer of an organic EL element may be used. As the underlayer, a vapor deposition film of these organic materials can be used. Thereby, a film with low adhesion can be formed. Moreover, the material of the underlayer is not limited to inorganic materials, and organic materials may also be used. For example, various organic materials that can be used for the EL layer of an organic EL element may be used. As the underlayer, a vapor deposition film of these organic materials can be used. Thereby, a film with low adhesion can be formed. Moreover, the material of the underlayer is not limited to inorganic materials, and organic materials may also be used. For example, various organic materials that can be used for the EL layer of an organic EL element may be used. As the underlayer, a vapor deposition film of these organic materials can be used. Thereby, a film with low adhesion can be formed.

[0111] For the metal layer 19, various metals, alloys, etc. can be used.

[0112] For the metal oxide layer 20, metal oxides of various metals can be used. Examples of the metal oxide include titanium oxide (TiO ), molybdenum oxide, aluminum oxide, tungsten oxide, indium tin oxide (ITSO) containing silicon, indium zinc oxide, In-Ga-Zn oxide, etc. x ) and others. In addition, examples of the metal oxide include indium oxide, indium oxide containing titanium, indium oxide containing tungsten, indium tin oxide (ITO), ITO containing titanium, indium zinc oxide containing tungsten, zinc oxide (ZnO), ZnO containing gallium, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, etc. In addition, examples of the metal oxide include indium oxide, indium oxide containing titanium, indium oxide containing tungsten, indium tin oxide (ITO), ITO containing titanium, indium zinc oxide containing tungsten, zinc oxide (ZnO), ZnO containing gallium, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, etc.

[0113] In addition, examples of the metal oxide include indium oxide, indium oxide containing titanium, indium oxide containing tungsten, indium tin oxide (ITO), ITO containing titanium, indium zinc oxide containing tungsten, zinc oxide (ZnO), ZnO containing gallium, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, etc. In addition, examples of the metal oxide include indium oxide, indium oxide containing titanium, indium oxide containing tungsten, indium tin oxide (ITO), ITO containing titanium, indium zinc oxide containing tungsten, zinc oxide (ZnO), ZnO containing gallium, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, etc. In addition, examples of the metal oxide include indium oxide, indium oxide containing titanium, indium oxide containing tungsten, indium tin oxide (ITO), ITO containing titanium, indium zinc oxide containing tungsten, zinc oxide (ZnO), ZnO containing gallium, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, etc. oxide, etc. Ru, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, tin oxide, bismuth oxide, and the like, such as titanates, tantalates, and niobates.

[0114] The method for forming the metal oxide layer 20 is not particularly limited. For example, it can be formed using a sputtering method, plasma CVD method, vapor deposition method, sol-gel method, electrophoresis method, spray method, or the like.

[0115] After forming the metal layer, the metal oxide layer 20 can be formed by introducing oxygen into the metal layer. At this time, only the surface of the metal layer or the entire metal layer is oxidized. In the former case, by introducing oxygen into the metal layer, a laminated structure of the metal layer 19 and the metal oxide layer 20 is formed (FIG. 4(A2)).

[0116] When there is a metal layer 19 between the production substrate 14 and the metal oxide layer 20 as shown in FIG. 4(A2), it is preferable to perform the separation step while heating the production substrate 14. Since the metal layer 19 has high thermal conductivity, when the metal layer 19 is heated, heat is conducted uniformly throughout the metal layer 19. Therefore, it is considered that peeling can be performed more uniformly.

[0117] For example, the metal layer can be oxidized by heating the metal layer in an atmosphere containing oxygen. It is preferable to heat the metal layer while flowing a gas containing oxygen. The temperature for heating the metal layer is preferably 100°C or higher and 500°C or lower, more preferably 100°C or higher and 450°C or lower, even more preferably 100°C or higher and 400°C or lower, and still more preferably 100°C or higher and 350°C or lower.

[0118] ​​​​​​​​​​​​The metal layer is preferably heated at a temperature equal to or lower than the maximum temperature in the fabrication of the transistor. . This can prevent the maximum temperature in the fabrication of the display device from increasing. By setting the temperature to be equal to or lower than the maximum temperature in the fabrication of the transistor, it becomes possible to reuse manufacturing equipment and the like in the fabrication process of the transistor, so that additional capital investment and the like can be suppressed. Therefore, a display device with suppressed production costs can be obtained. For example, when the fabrication temperature of the transistor is up to 350 °C, the heat treatment temperature is preferably 350 °C or lower.

[0119] Alternatively, the metal layer can be oxidized by performing radical treatment on the surface of the metal layer. In the radical treatment, it is preferable to expose the surface of the metal layer to an atmosphere containing at least one of oxygen radicals and hydroxyl radicals. For example, it is preferable to perform plasma treatment in an atmosphere containing one or both of oxygen or water vapor (H2O).

[0120] As described above, by including hydrogen, oxygen, hydrogen radicals (H * ), oxygen radicals (O * ), * hydroxyl radicals (OH ) and the like on the surface or inside of the metal oxide layer 20, the force required for separating the metal oxide layer 20 and the resin layer 23 can be reduced. From this also, it is suitable to perform radical treatment or plasma treatment in the formation of the metal oxide layer 20.

[0121] When the metal layer is oxidized by performing radical treatment or plasma treatment on the surface of the metal layer, the step of heating the metal layer at a high temperature becomes unnecessary. Therefore, the maximum temperature in the fabrication of the display device It can be prevented from increasing in degree. Specifically, it becomes easy to set the maximum temperature in the production of the display device to 350 °C or less.

[0122] Alternatively, the metal oxide layer 20 can be formed in an oxygen atmosphere. For example, by forming a metal oxide film using a sputtering method while flowing a gas containing oxygen , the metal oxide layer 20 can be formed. Also in this case, it is preferable to perform radical treatment on the surface of the metal oxide layer 20. In radical treatment, it is preferable to expose the surface of the metal oxide layer 20 to an atmosphere containing at least one of oxygen radicals, hydrogen radicals, and hydroxy radicals. For example, it is preferable to perform plasma treatment in an atmosphere containing one or more of oxygen, hydrogen, or water vapor (H2O). For details of the radical treatment, reference can be made to the content described above. In addition, as methods for introducing oxygen, hydrogen, water, etc., an ion implantation method, an ion doping method, a plasma immersion ion implantation method, etc. can be used.

[0123] For details of the radical treatment, reference can be made to the content described above.

[0124] In addition, as methods for introducing oxygen, hydrogen, water, etc., an ion implantation method, an ion doping method, a plasma immersion ion implantation method, etc. can be used.

[0125] The thickness of the metal layer 19 is preferably 1 nm or more and 100 nm or less, more preferably 1 nm or more and 50 nm or less, and even more preferably 1 nm or more and 20 nm or less. The thickness of the metal oxide layer 20 is preferably, for example, 1 nm or more and 200 nm or less, more preferably 5 nm or more

[0126] and 100 nm or less, and even more preferably 5 nm or more and 50 nm or less. Note that when the metal oxide layer 20 is formed using the metal layer , the thickness of the finally formed metal oxide layer 20 may be thicker than the thickness of the formed metal layer. The thickness of the metal oxide layer 20 may be thicker than the thickness of the formed metal layer.

[0127] Before or during separation, a liquid containing water is supplied to the interface between the metal oxide layer 20 and the resin layer 23, so that the force required for separation can be reduced. The smaller the contact angle between the metal oxide layer 20 and the liquid, the more the effect of liquid supply can be enhanced. Specifically, the contact angle of the metal oxide layer 20 with the liquid containing water is preferably greater than 0° and 60° or less, more preferably greater than 0° and 50° or less. The metal oxide layer 20 preferably has a photocatalytic function. By irradiating the metal oxide layer having a photocatalytic function with light, a photocatalytic reaction can be caused. As a result, even without irradiating with light having high energy such as laser light, the bonding force between the metal oxide layer and the resin layer can be weakened, and they can be easily separated. For the metal oxide layer 20, titanium oxide, tungsten oxide, etc. are suitable. Using titanium oxide can reduce the cost more than tungsten oxide, which is preferable.

[0128] For example, ultraviolet light is irradiated on the metal oxide layer 20. After the formation of the metal oxide layer 20 and before the formation of the first layer 24, ultraviolet light can be directly irradiated on the metal oxide layer without passing through other layers. Or, before or during separation, ultraviolet light may be irradiated on the metal oxide layer 20 through the production substrate 14. For the irradiation of ultraviolet light, an ultraviolet lamp can be preferably used. Examples of the ultraviolet lamp include a mercury lamp, a mercury xenon lamp, a metal halide lamp, etc. Note that not limited to ultraviolet light, light having a wavelength that activates the metal oxide layer can be appropriately irradiated.

[0129] For the metal oxide layer 20, titanium oxide added with metal or nitrogen may also be used.

[0130] ​​​​​​​​​​​ When the metal oxide layer 20 is formed using titanium oxide added with the element of , it can be activated by visible light instead of ultraviolet light.

[0131] Next, a first layer 24 is formed on the metal oxide layer 20 (FIG. 4(B)).

[0132] In FIG. 4(B), an example of forming the first layer 24 on the entire one surface of the metal oxide layer 20 using a coating method is shown. It is not limited to this, and the first layer 24 may be formed using a printing method or the like. On the metal oxide layer 20, an island-shaped first layer 24, a first layer 24 having an opening or uneven

[0133] shape, or the like may be formed.

[0134] The first layer 24 can be formed using various resin materials (including resin

[0135] precursors). It is preferable that the first layer 24 is formed using a material having thermosetting properties.

[0136] The first layer 24 may be formed using a photosensitive material, or may be formed using a non-photosensitive material (also referred to as a non-photosensitive

[0137] material). When a photosensitive material is used, a part of the first layer 24 can be removed by a lithography method using light to form a resin layer 23 having a desired shape. The first layer 24 is preferably formed using a material containing a polyimide Therefore, no new device or material is required to realize the configuration of one embodiment of the present invention.

[0138] Specifically, the resin layer 23 is made of a compound (oxydiphthalic acid) represented by the structural formula (100). It is preferred that the aryl group has a residue.

[0139] [ka]

[0140] The resin layer 23 contains an acid component containing oxydiphthalic acid or an oxydiphthalic acid derivative, and an aromatic and an amine component containing an aromatic amine or an aromatic amine derivative, The oxydiphthalic acid derivative is, for example, oxydiphthalic anhydride. The resin layer 23 may include fluorine. When the fluorine is contained, hydrogen bonds are formed between the metal oxide layer 20 and the resin layer 23 using the fluorine. This can sometimes happen.

[0141] Also, polyimide resin or polyimide resin that can be suitably used for the first layer 24 The physical properties of the materials including the precursor are shown in Table 1.

[0142] [Table 1]

[0143] The resin layer 23 can be formed using materials A to E shown in Table 1. In order to improve the reliability, the glass transition temperature (Tg) and 5% weight loss temperature of the material are , it is preferable that each is high.

[0144] Other examples of resin materials that can be used to form the first layer 24 include acrylic. R resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, ben zoscyclobutene resins, phenolic resins, and precursors of these resins and the like can be mentioned.

[0145] The first layer 24 is preferably formed using a spin coater. By using the spin coating method a thin film can be uniformly formed on a large-sized substrate.

[0146] The first layer 24 is preferably formed using a solution having a viscosity of 5 cP or more and less than 500 cP, preferably 5 cP or more and less than 100 cP more preferably 10 cP or more and 50 cP or less. The lower the viscosity of the solution, the easier the coating. Also, the lower the viscosity of the solution, the more the mixing of air bubbles can be suppressed and a high-quality film can be formed.

[0147] In addition, as a method for forming the first layer 24, dip, spray coating, inkjet , dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating, etc. can be mentioned.

[0148] Next, by performing a heat treatment on the first layer 24, the resin layer 23 is formed (Fig. 4(C) ).

[0149] By the heat treatment, the adhesion or adhesiveness between the metal oxide layer 20 and the resin layer 23 can be reduced. to that extent.

[0150] The heat treatment is preferably performed in an atmosphere containing oxygen. The more the resin layer 23 contains oxygen, the smaller the force required to separate the metal oxide layer 20 and the resin layer 23 can be. The higher the proportion of oxygen in the atmosphere of the heat treatment, the more oxygen can be contained in the resin layer 23, and the tree ​The lipid layer and the metal oxide layer can be easily separated.

[0151] In the metal oxide layer 20, in the resin layer 23, or at the interface between the metal oxide layer 20 and the resin layer 23, etc. The force required to separate the metal oxide layer 20 and the resin layer 23 can be reduced by the moisture present. It can be lowered.

[0152] The presence of water between the metal oxide layer 20 and the resin layer 23 reduces the adhesion or adhesiveness between the metal oxide layer 20 and the resin layer 23. As a result, they can be easily separated at the interface between the metal oxide layer 20 and the resin layer 23.

[0153] Also, by performing heat treatment, water expands between the metal oxide layer 20 and the resin layer 23 (becomes water vapor and the volume expands). Thereby, the adhesion or adhesiveness between the metal oxide layer 20 and the resin layer 23 can be reduced.

[0154] The heat treatment can be performed, for example, with the inside of the chamber of the heating device in an oxygen-containing atmosphere. Or, the heat treatment can be performed using a chamber of a heating device, a hot plate, etc. under an air atmosphere.

[0155] For example, the oxygen partial pressure of the atmosphere during heat treatment is preferably 5% or more and less than 100%, more preferably 10% or more and less than 100%, and even more preferably 15% or more and less than 100%.

[0156] The heat treatment is preferably performed under an air atmosphere. When the heat treatment is performed under an air atmosphere, it is easier to retain moisture in the metal oxide layer 20, in the resin layer 23, or at the interface between the metal oxide layer 20 and the resin layer 23, etc., compared to the case of performing it while flowing gas. Therefore, the metal oxide The force required to separate the layer 20 and the resin layer 23 can be reduced.

[0157] Alternatively, the heat treatment can be performed while flowing a gas containing oxygen in the chamber of the heating device. This can be done, for example, by flowing only oxygen gas or a mixed gas containing oxygen gas. Specifically, a mixed gas containing oxygen, nitrogen or a noble gas (such as argon), can be used.

[0158] Depending on the heating device, deterioration of the heating device may occur when the proportion of oxygen in the atmosphere increases. Therefore, when using a mixed gas containing oxygen gas, the proportion of the oxygen gas flow rate in the total mixed gas flow rate is preferably 5% or more and 50% or less, more preferably 10% or more and 50% or less, and even more preferably 15% or more and 50% or less.

[0159] The temperature of the heat treatment is preferably 100°C or more and 500°C or less, more preferably 100°C or more and 450°C or less, even more preferably 100°C or more and 400°C or less, and even more preferably 100°C or more and 350°C or less.

[0160] The higher the temperature of the heat treatment, the higher the peelability of the resin layer 23 can be enhanced.

[0161] By the heat treatment, the degassing components (such as hydrogen, water, etc.) in the resin layer 23 can be reduced. In particular, it is preferable to heat at a temperature equal to or higher than the production temperature of each layer formed on the resin layer 23. Thereby, the degassing from the resin layer 23 in the manufacturing process of the transistor can be significantly suppressed.

[0162] For example, when the production temperature of the transistor is up to 350°C, the film that becomes the resin layer 23 is 35 It is preferably heated at a temperature of 0°C or higher and 480°C or lower, more preferably 350°C or higher and 400°C or lower, and even more preferably 350°C or higher and 375°C or lower. By doing so, outgassing from the resin layer 23 during the manufacturing process of the transistor can be significantly suppressed. The temperature of the heat treatment is preferably set to a temperature equal to or lower than the maximum temperature in the manufacturing of the transistor. By setting the temperature to be equal to or lower than the maximum temperature in the manufacturing of the transistor, it becomes possible to divert manufacturing equipment and the like in the manufacturing process of the transistor, thus suppressing additional capital investment and the like. Therefore, a display device with reduced production costs can be obtained.

[0163] For example, when the manufacturing temperature of the transistor is up to 350°C, the temperature of the heat treatment is preferably 350°C or lower. If the maximum temperature in the manufacturing of the transistor is made equal to the temperature of the heat treatment, it is possible to prevent the maximum temperature in the manufacturing of the display device from increasing by performing the heat treatment, and it is preferable because the outgassing components of the resin layer 23 can be reduced. The longer the heat treatment time, the higher the peelability of the resin layer 23 can be enhanced. By increasing the treatment time, it may be possible to achieve the same peelability as in the case of higher heating temperature conditions even when the heating temperature is relatively low. Therefore, when the heating temperature cannot be increased due to the configuration of the heating device, it is preferable to increase the treatment time. The heat treatment time is preferably, for example, 5 minutes or longer and 24 hours or shorter, more preferably 30 minutes or longer and 12 hours or shorter.

[0164]

[0165]

[0166]

[0167] ​​​​​​​​​is more preferable, and 1 hour or more and 6 hours or less is even more preferable. Note that the heat treatment time is not limited to this. For example, when the heat treatment is performed using the RTA (Rapid Thermal Annealing) method, it may be less than 5 minutes. For example, when performing the heat treatment using the RTA (Rapid Thermal Annealing) method, it may be less than 5 minutes. As the heating device, various devices can be used, such as an electric furnace or a device that heats the object to be processed by heat conduction or heat radiation from a heating element such as a resistance heating element. For example, RTA devices such as GRTA (Gas Rapid Thermal Anneal) devices and LRTA (Lamp Rapid Thermal Anneal) devices can be used. The LRTA device is a device that heats the object to be processed by the radiation of light (electromagnetic wave) emitted from lamps such as halogen lamps, metal halide lamps, xenon arc lamps, carbon arc lamps, high-pressure sodium lamps, and high-pressure mercury lamps. The GRTA device is a device that performs heat treatment using high-temperature gas. By using an RTA device, the processing time can be shortened, which is preferable for mass production. Also, the heat treatment may be performed using an in-line type heating device.

[0168] As the heating device, various devices can be used, such as an electric furnace or a device that heats the object to be processed by heat conduction or heat radiation from a heating element such as a resistance heating element. For example, RTA devices such as GRTA (Gas Rapid Thermal Anneal) devices and LRTA (Lamp Rapid Thermal Anneal) devices can be used. The LRTA device is a device that heats the object to be processed by the radiation of light (electromagnetic wave) emitted from lamps such as halogen lamps, metal halide lamps, xenon arc lamps, carbon arc lamps, high-pressure sodium lamps, and high-pressure mercury lamps. The GRTA device is a device that performs heat treatment using high-temperature gas. By using an RTA device, the processing time can be shortened, which is preferable for mass production. Also, the heat treatment may be performed using an in-line type heating device. Here, for example, when using a resin for the planarization layer of a display device or the like, in order to prevent the resin from being oxidized and deteriorated, heating is generally performed at as low a temperature as possible under conditions where almost no oxygen is contained and within the temperature range in which the resin cures. However, in one aspect of the present invention, the surface of the first layer 24 that becomes the resin layer 23 is exposed and heated at a relatively high temperature (for example, a temperature of 200 °C or higher) in a state of being exposed to an atmosphere positively containing oxygen. Thereby, high peelability can be imparted to the resin layer 23. Here, for example, when using a resin for the planarization layer of a display device or the like, in order to prevent the resin from being oxidized and deteriorated, heating is generally performed at as low a temperature as possible under conditions where almost no oxygen is contained and within the temperature range in which the resin cures. However, in one aspect of the present invention, the surface of the first layer 24 that becomes the resin layer 23 is exposed and heated at a relatively high temperature (for example, a temperature of 200 °C or higher) in a state of being exposed to an atmosphere positively containing oxygen. Thereby, high peelability can be imparted to the resin layer 23. Also, the heat treatment may be performed using an in-line type heating device.

[0169] Here, for example, when using a resin for the planarization layer of a display device or the like, in order to prevent the resin from being oxidized and deteriorated, heating is generally performed at as low a temperature as possible under conditions where almost no oxygen is contained and within the temperature range in which the resin cures. However, in one aspect of the present invention, the surface of the first layer 24 that becomes the resin layer 23 is exposed and heated at a relatively high temperature (for example, a temperature of 200 °C or higher) in a state of being exposed to an atmosphere positively containing oxygen. Thereby, high peelability can be imparted to the resin layer 23. Here, for example, when using a resin for the planarization layer of a display device or the like, in order to prevent the resin from being oxidized and deteriorated, heating is generally performed at as low a temperature as possible under conditions where almost no oxygen is contained and within the temperature range in which the resin cures. However, in one aspect of the present invention, the surface of the first layer 24 that becomes the resin layer 23 is exposed and heated at a relatively high temperature (for example, a temperature of 200 °C or higher) in a state of being exposed to an atmosphere positively containing oxygen. Thereby, high peelability can be imparted to the resin layer 23.

[0170] The thickness of the resin layer 23 may be changed from the thickness of the first layer 24 by the heat treatment. For example, the solvent contained in the first layer 24 is removed, and the hardening progresses, causing the density to decrease. As a result, the volume of the resin layer 23 may decrease, and the resin layer 23 may become thinner than the first layer 24. Alternatively, the volume of the first layer 24 increases due to the inclusion of oxygen during the heat treatment. In some cases, the resin layer 23 may become thicker.

[0171] Before the heat treatment, a heat treatment (pre-bake) is performed to remove the solvent contained in the first layer 24. The temperature of the pre-baking process is appropriately determined depending on the material used. For example, the temperature range can be 50°C or higher and 180°C or lower, 80°C or higher and 150°C or lower, or 9 The heating process can be performed at 0°C to 120°C. Alternatively, the heating process can be performed as a pre-bake process. Alternatively, the solvent contained in the first layer 24 may be removed by a heat treatment.

[0172] The resin layer 23 has flexibility. The preparation substrate 14 has lower flexibility than the resin layer 23.

[0173] The thickness of the resin layer 23 is preferably 0.01 μm or more and less than 10 μm. More preferably, the thickness is from 0.5 μm to 3 μm. By forming a thin resin layer, the display device can be manufactured at low cost. This allows the display device to be made lighter and thinner. In addition, the flexibility of the display device can be improved. By using a low viscosity solution, it becomes easy to form a thin resin layer 23. However, The thickness of the resin layer 23 is not limited to this, and may be 10 μm or more. The thickness of 3 may be 10 μm or more and 200 μm or less. The thickness of the resin layer 23 is 10 μm or more By doing so, it is suitable because the rigidity of the display device can be increased.

[0174] The coefficient of thermal expansion of the resin layer 23 is preferably 0.1 ppm / °C or more and 50 ppm / °C or less More preferably, it is 0.1 ppm / °C or more and 20 ppm / °C or less, and even more preferably 0.1 pp m / °C or more and 10 ppm / °C or less. The lower the coefficient of thermal expansion of the resin layer 23, the less likely it is for cracks to occur in the layers constituting transistors or the like due to heating, or for transistors or the like to be damaged.

[0175] The visible light transmittance of the resin layer 23 is not particularly limited. For example, it may be a colored layer or a transparent layer. When the resin layer 23 is located on the display surface side of the display device, the resin layer 23 preferably has high transmittance for visible light.

[0176] Next, a peeling layer 25 is formed on the resin layer 23 (Fig. 4(D)).

[0177] As the peeling layer 25, for example, an insulating layer or functional elements (such as transistors and display elements) can be provided thereon.

[0178] The peeling layer 25 preferably has an insulating layer. The insulating layer blocks hydrogen, oxygen, and water released from the metal oxide layer 20, the resin layer 23, etc. in the subsequent heating process and preferably has the function of blocking them.

[0179] The peeling layer preferably has, for example, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film For example, a silicon nitride film is formed using silane gas, hydrogen gas, and ammonia A film is formed by plasma CVD using a film-forming gas containing ammonia (NH3) gas. Insulating layer The thickness of is not particularly limited. For example, it can be 50 nm or more and 600 nm or less, preferably 100 n m or more and 300 nm or less.

[0180] In this specification and the like, "silicon oxynitride" refers to a substance having a composition in which the oxygen content is higher than that of nitrogen. Also, in this specification and the like, "silicon nitride oxide" refers to a substance having a composition in which the nitrogen content is higher than that of oxygen.

[0181] Then, a protective layer is formed on the layer to be peeled 25. The protective layer is the layer located on the outermost surface of the display device It is preferable that the protective layer has high transparency to visible light. If the protective layer has an organic insulating film it is preferable because it can suppress damage to the surface of the display device and the occurrence of cracks.

[0182] FIG. 4(D) shows an example in which a substrate 75a is bonded to the layer to be peeled 25 using an adhesive layer 75b. shown.

[0183] For the adhesive layer 75b, various curable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used. Also, an adhesive sheet or the like can be used instead.

[0184] For the substrate 75a, for example, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, poly imide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyether sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, etc. can be used. resin, etc. can be used.​​ Suns resins, cycloolefin resins, polystyrene resins, polyamideimide resins, polyure thane resins, polyvinyl chloride resins, polyvinylidene chloride resins, polypropylene resins, polytetra fluoroethylene (PTFE) resins, ABS resins, cellulose nanofibers, etc. can be used. For the substrate 75a, various materials such as glass, quartz, resin, metal, alloy, semiconductor, etc. with a thickness that has flexibility can be used.

[0185] Next, the fabricated substrate 14 and the resin layer 23 are separated. Since the adhesion or adhesiveness between the metal oxide layer 20 and the resin layer 23 is low, separation occurs at the interface between the metal oxide layer 20 and the resin layer 23 ( FIG. 4(E)).

[0186] For example, by applying a pulling force in the vertical direction to the resin layer 23, the fabricated substrate 14 and the resin layer 23 can be separated. Specifically, by adsorbing a part of the upper surface of the substrate 75a and pulling it upward, the resin layer 23 can be peeled off from the fabricated substrate 14.

[0187] Here, at the time of separation, a liquid containing water, such as water or an aqueous solution, is added to the separation interface, and the separation is performed so that the liquid penetrates the separation interface, so that the separation can be easily performed. Also, the static electricity generated during separation can be suppressed from having an adverse effect on functional elements such as transistors (such as the semiconductor element being damaged by static electricity). In FIG. 4(E), an example of supplying a liquid to the separation interface using the liquid supply mechanism 21 is shown. Examples of the liquid to be supplied include water (preferably pure water), neutral, alkaline, or acidic aqueous solutions,

[0188] aqueous solutions in which salts are dissolved, and ethanol, acetone, etc. In addition, various organic solvents may be used.

[0189] Before separation, a starting point for separation may be formed by separating a part of the resin layer 23 from the production substrate 14. For example, a starting point for separation may be formed by inserting a sharp instrument such as a blade between the production substrate 14 and the resin layer 23. Or, a starting point for separation may be formed by cutting the resin layer 23 with a sharp instrument from the substrate 75a side. Or, a starting point for separation may be formed by a method using a laser such as laser ablation.

[0190] In this embodiment, the metal oxide layer 20 and the resin layer 23 (or the first layer 24) are laminated and heat treatment is performed. Thereby, the adhesion or adhesiveness between the metal oxide layer 20 and the resin layer 23 can be reduced. Therefore, the production substrate 14 and the resin layer 23 can be separated without performing laser irradiation on the entire surface of one side of the resin layer 23. Thereby, a display device can be manufactured at low cost.

[0191] By using the peeling method of this embodiment, a peeling method with high mass productivity at low cost or a manufacturing method of a semiconductor device can be provided. For example, in the peeling method of this embodiment, the production substrate 14 (for example, a glass substrate) or a laminate of the production substrate 14 and the metal oxide layer 20 can be repeatedly used a plurality of times, so that the production cost can be suppressed.

[0192] [Manufacturing Method Example 1] Next, an example of a manufacturing method of the display device of this embodiment will be described. Explanation of parts similar to the peeling method described above may be omitted.

[0193] First, a metal oxide layer 20 is formed on the production substrate 14 (Fig. 5(A)). Regarding the metal oxide layer 2 0, reference can be made to the description in the above peeling method.

[0194] Next, a first layer 24 is formed on the metal oxide layer 20 (Fig. 5(B)). Regarding the first layer 24 reference can be made to the description in the above peeling method.

[0195] In this embodiment, the first layer 24 is formed using a material having photosensitivity and thermosetting properties. Note that the first layer 24 may be formed using a non-photosensitive material.

[0196] After forming the first layer 24, a heat treatment (pre-bake treatment) is performed to remove the solvent, and then exposure is performed using a photomask. Subsequently, by performing a development process, unnecessary portions can be removed. Next, by performing a heat treatment on the first layer 24 processed into a desired shape, a resin layer 23 is formed (Fig. 5(C)). Fig. 5(C) shows an example of forming an island-shaped resin layer 23.

[0197] Note that the shape of the resin layer 23 is not limited to one island shape, and for example, it may be in the form of a plurality of islands, a shape having an opening, etc. Also, an uneven shape may be formed on the surface of the resin layer 23 using an exposure technique using a halftone mask or a grayscale mask, or a multiple exposure technique, etc.

[0198] A mask such as a resist mask or a hard mask is formed on the first layer 24 or the resin layer 23, and by etching, a resin layer 23 having a desired shape can be formed. This method is particularly suitable when using a non-photosensitive material.

[0199] For example, an inorganic film is formed on the resin layer 23, and a resist mask is formed on the inorganic film. After etching the inorganic film using the resist mask, the resin layer 23 can be etched using the inorganic film as a hard mask.

[0200] Examples of the inorganic film that can be used as a hard mask include various inorganic insulating films, metal films, and alloy films that can be used for conductive layers.

[0201] If the mask can be formed with an extremely thin thickness and removed simultaneously with etching, the process of removing the mask can be reduced, which is preferable.

[0202] Details of the heat treatment can be referred to the description of the heat treatment in the above peeling method.

[0203] Next, an insulating layer 31 is formed on the resin layer 23 (Fig. 5(D)). The insulating layer 31 is formed to cover the end portion of the resin layer 2 3. There is a portion on the metal oxide layer 20 where the resin layer 23 is not provided. Therefore, the insulating layer 31 can be formed in contact with the metal oxide layer 20.

[0204] The insulating layer 31 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. It is preferably formed at a temperature lower than the temperature of the heat treatment.

[0205] The insulating layer 31 can be used as a barrier layer to prevent impurities contained in the resin layer 23 from diffusing into transistors and display elements formed later. For example, when the resin layer 23 is heated, it is preferable that the insulating layer 31 prevents moisture and the like contained in the resin layer 23 from diffusing into transistors and display elements. Therefore, the insulating layer 31 preferably has high barrier properties.

[0206] As the insulating layer 31, for example, an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or an aluminum nitride film can be used. Also, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. In particular, it is preferable to form a silicon nitride film on the resin layer 23 and form a silicon oxide film on the silicon nitride film.

[0207] Since the inorganic insulating film becomes a denser and higher-barrier film as the film formation temperature is higher, it is preferably formed at a high temperature.

[0208] The substrate temperature during the film formation of the insulating layer 31 is preferably room temperature (25°C) or higher and 350°C or lower, and more preferably 100 °C or higher and 300°C or lower.

[0209] Next, a transistor 40 is formed on the insulating layer 31 (Fig. 5(E)).

[0210] The structure of the transistor included in the display device is not particularly limited. For example, it may be a planar transistor, a staggered transistor, or an inverse staggered transistor. Also, it may have either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

[0211] Here, the case of fabricating a bottom gate structure transistor having a metal oxide layer 44 as the transistor 40 is shown. The metal oxide layer 44 serves as the semiconductor layer of the transistor 40. ​ It can function. The metal oxide can function as an oxide semiconductor.

[0212] In this embodiment, an oxide semiconductor is used for the semiconductor of the transistor. Using a semiconductor material with a wider bandgap and a lower carrier density than silicon is preferable because it can reduce the current in the off state of the transistor. than silicon is preferable because it can reduce the current in the off state of the transistor. In this embodiment, an oxide semiconductor is used for the semiconductor of the transistor. Using a semiconductor material with a wider bandgap and a lower carrier density than silicon is preferable because it can reduce the current in the off state of the transistor.

[0213] The transistor 40 is formed at a temperature equal to or lower than the heat resistance temperature of the resin layer 23. It is preferable that the transistor 40 is formed at a temperature lower than the heat treatment temperature. The transistor 40 is formed at a temperature equal to or lower than the heat resistance temperature of the resin layer 23. It is preferable that the transistor 40 is formed at a temperature lower than the heat treatment temperature.

[0214] Specifically, first, a conductive layer 41 is formed on the insulating layer 31. The conductive layer 41 can be formed by forming a conductive film, then forming a resist mask, etching the conductive film, and then removing the resist mask. Specifically, first, a conductive layer 41 is formed on the insulating layer 31. The conductive layer 41 can be formed by forming a conductive film, then forming a resist mask, etching the conductive film, and then removing the resist mask. Specifically, first, a conductive layer 41 is formed on the insulating layer 31. The conductive layer 41 can be formed by forming a conductive film, then forming a resist mask, etching the conductive film, and then removing the resist mask.

[0215] The substrate temperature during the formation of the conductive film is preferably equal to or higher than room temperature and equal to or lower than 350 °C, and more preferably equal to or higher than room temperature and equal to or lower than 300 °C. The substrate temperature during the formation of the conductive film is preferably equal to or higher than room temperature and equal to or lower than 350 °C, and more preferably equal to or higher than room temperature and equal to or lower than 300 °C.

[0216] For the conductive layers included in the display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these can be used in a single-layer structure or a laminated structure. Alternatively, a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium, or ITO containing silicon may be used. For the conductive layers included in the display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these can be used in a single-layer structure or a laminated structure. Alternatively, a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium, or ITO containing silicon may be used. For the conductive layers included in the display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these can be used in a single-layer structure or a laminated structure. Alternatively, a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium, or ITO containing silicon may be used. For the conductive layers included in the display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these can be used in a single-layer structure or a laminated structure. Alternatively, a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium, or ITO containing silicon may be used. For the conductive layers included in the display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these can be used in a single-layer structure or a laminated structure. Alternatively, a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium, or ITO containing silicon may be used. For the conductive layers included in the display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these can be used in a single-layer structure or a laminated structure. Alternatively, a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium, or ITO containing silicon may be used. For the conductive layers included in the display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these can be used in a single-layer structure or a laminated structure. Alternatively, a light-transmitting conductive material such as indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), ZnO containing gallium, or ITO containing silicon may be used. Alternatively, a polycrystalline silicon or an oxide semiconductor which has been made to have a low resistance by containing an impurity element, etc., or a silicide such as nickel silicide may be used. Further, a film containing graphene may also be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide. Further, a semiconductor such as an oxide semiconductor containing an impurity element may be used. Or, it may be formed using a conductive paste such as silver, carbon, or copper, or a conductive polymer such as polythiophene. The conductive paste is inexpensive and preferable. The conductive polymer is easy to apply and preferable.

[0217] Subsequently, an insulating layer 32 is formed. The insulating layer 32 can use the inorganic insulating film that can be used for the insulating layer 31.

[0218] Subsequently, a metal oxide layer 44 is formed. The metal oxide layer 44 can be formed by forming a metal oxide film, then forming a resist mask, etching the metal oxide film, and then removing the resist mask.

[0219] The substrate temperature during the film formation of the metal oxide film is preferably 350°C or lower, more preferably room temperature or higher and 200°C or lower, and even more preferably room temperature or higher and 130°C or lower.

[0220] The metal oxide film can be formed using either one or both of an inert gas and an oxygen gas. Note that there is no particular limitation on the flow rate ratio (oxygen partial pressure) of oxygen during the film formation of the metal oxide film. However, when obtaining a transistor with a high field-effect mobility, the flow rate ratio (oxygen partial pressure) of oxygen during the film formation of the metal oxide film is preferably 0% or more and 30% or less, and more preferably 5 ​​​​​​​​​​​​More preferably, it is 30% or less and more preferably 7% or more and 15% or less.

[0221] The metal oxide film preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc.

[0222] The metal oxide preferably has an energy gap of 2 eV or more, more preferably 2.5 eV or more, and even more preferably 3 eV or more. By using a metal oxide with a wide energy gap in this way, the off-current of the transistor can be reduced.

[0223] The metal oxide film can be formed by a sputtering method. In addition, other methods such as a PLD method, a PECVD method, a thermal CVD method, an ALD method, and a vacuum evaporation method may be used.

[0224] Subsequently, a conductive layer 43a and a conductive layer 43b are formed. The conductive layer 43a and the conductive layer 43b can be formed by forming a conductive film, then forming a resist mask, etching the conductive film, and then removing the resist mask. The conductive layer 43a and the conductive layer 43b are each connected to the metal oxide layer 44.

[0225] Note that when processing the conductive layer 43a and the conductive layer 43b, a part of the metal oxide layer 44 not covered by the resist mask may be thinned by etching.

[0226] The substrate temperature during the formation of the conductive film is preferably room temperature or higher and 350 °C or lower, and more preferably room temperature or higher and 300 °C or lower.

[0227] As described above, the transistor 40 can be manufactured (Fig. 5(E)). ​​​​​​​​​​Here, a part of the conductive layer 41 functions as a gate, and a part of the insulating layer 32 functions as a gate insulating layer. The conductive layer 43a and the conductive layer 43b each function as either a source or a drain.

[0228] Next, an insulating layer 33 covering the transistor 40 is formed (FIG. 6(A)). The insulating layer 33 can be formed in the same manner as the insulating layer 31.

[0229] Also, as the insulating layer 33, it is preferable to use an oxide insulating film such as a silicon oxide film or a silicon oxynitride film formed in an oxygen-containing atmosphere. Further, it is preferable to stack an insulating film such as a silicon nitride film that is difficult for oxygen to diffuse and permeate on the silicon oxide film or the silicon oxynitride film. The oxide insulating film formed in an oxygen-containing atmosphere can be made into an insulating film that easily releases a large amount of oxygen by heating. By performing a heat treatment in a state where such an oxide insulating film that releases oxygen and an insulating film that is difficult for oxygen to diffuse and permeate are stacked, oxygen can be supplied to the metal oxide layer 44. As a result, oxygen vacancies in the metal oxide layer 44 and defects at the interface between the metal oxide layer 44 and the insulating layer 33 can be repaired, and the defect levels can be reduced. As a result, an extremely reliable display device can be realized.

[0230] Through the above steps, the insulating layer 31, the transistor 40, and the insulating layer 33 can be formed on the resin layer 23 (FIG. 6(A)).

[0231] At this stage, by separating the production substrate 14 and the transistor 40 using the method described later, a device without a display element can be produced. For example, the transistor 4 ​​​​​​​​​​​0 and the transistor 40, a capacitor, a resistor, a wiring, and the like are formed. A semiconductor device can be manufactured.

[0232] Next, an insulating layer 34 is formed on the insulating layer 33 (FIG. 6(A)). Since the layer has a surface on which a display element is to be formed, it preferably functions as a planarizing layer. The insulating layer 34 can be made of an organic insulating film or an inorganic insulating film that can be used for the insulating layer 31. do.

[0233] The insulating layer 34 is formed at a temperature equal to or lower than the heat resistance temperature of the resin layer 23. It is preferable to form the film at a temperature lower than the temperature.

[0234] When an organic insulating film is used for the insulating layer 34, the temperature applied to the resin layer 23 during the formation of the insulating layer 34 is The temperature is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C.

[0235] When an inorganic insulating film is used for the insulating layer 34, the substrate temperature during film formation is preferably from room temperature to 350° C. The heating temperature is preferably from 100°C to 300°C, and more preferably from 100°C to 300°C.

[0236] Next, an opening is formed in the insulating layer 34 and the insulating layer 33 down to the conductive layer 43b.

[0237] Then, the conductive layer 61 is formed. A part of the conductive layer 61 serves as a pixel electrode of the light emitting element 60. The conductive layer 61 is formed by forming a conductive film, forming a resist mask, and then masking the conductive film. The resist mask can be removed after etching.

[0238] The conductive layer 61 is formed at a temperature equal to or lower than the heat resistant temperature of the resin layer 23. It is preferable to form the film at a temperature lower than the temperature.

[0239] The substrate temperature during the formation of the conductive film is preferably not lower than room temperature and not higher than 350°C, more preferably not lower than room temperature and not higher than 300°C. is even more preferable.

[0240] Next, an insulating layer 35 covering the end portion of the conductive layer 61 is formed. The insulating layer 35 can use an organic insulating film or an inorganic insulating film that can be used for the insulating layer 31. can be used.

[0241] The insulating layer 35 is formed at a temperature not higher than the heat-resistant temperature of the resin layer 23. The insulating layer 35 is preferably formed at a temperature lower than the temperature of the heat treatment. is preferably formed at a temperature lower than the temperature of the heat treatment.

[0242] When an organic insulating film is used for the insulating layer 35, the temperature applied to the resin layer 23 during the formation of the insulating layer 35 is preferably not lower than room temperature and not higher than 350°C, and more preferably not lower than room temperature and not higher than 300°C.

[0243] When an inorganic insulating film is used for the insulating layer 35, the substrate temperature during film formation is preferably not lower than room temperature and not higher than 350°C, more preferably not lower than 100°C and not higher than 300°C.

[0244] Next, an EL layer 62 and a conductive layer 63 are formed. A part of the conductive layer 63 functions as a common electrode of the light-emitting element 60. functions as.

[0245] The EL layer 62 can be formed by methods such as evaporation, coating, printing, and dispensing. When the EL layer 62 is formed separately for each pixel, an evaporation method using a shadow mask such as a metal mask or an inkjet method can be used. When the EL layer 62 is not formed separately for each pixel, an evaporation method without using a metal mask can be used. formed by, or an inkjet method or the like. When the EL layer 62 is not formed separately for each pixel it is possible to use an evaporation method without using a metal mask.

[0246] For the EL layer 62, either a low-molecular compound or a high-molecular compound can be used, and inorganic It may contain a compound.

[0247] The conductive layer 63 can be formed using a vapor deposition method, a sputtering method, or the like.

[0248] The conductive layer 63 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23 and equal to or lower than the heat-resistant temperature of the EL layer 62. Moreover, it is preferably formed at a temperature lower than the heat treatment temperature.

[0249] In this way, the light-emitting element 60 can be formed (Fig. 6(A)). The light-emitting element 60 has a structure in which a conductive layer 61 that partly functions as a pixel electrode, an EL layer 62, and a conductive layer 63 that partly functions as a common electrode are laminated.

[0250] Here, an example of manufacturing a top emission type light-emitting element was shown as the light-emitting element 60, but one aspect of the present invention is not limited to this.

[0251] The light-emitting element may be any of a top emission type, a bottom emission type, and a dual emission type. For the electrode on the side where light is extracted, a conductive film that transmits visible light is used. Moreover, for the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0252] Next, an insulating layer 74 is formed covering the conductive layer 63 (Fig. 6(A)). The insulating layer 74 functions as a protective layer that suppresses the diffusion of impurities such as water into the light-emitting element 60. The light-emitting element 60 is sealed by the insulating layer 74. After forming the conductive layer 63, it is preferable to form the insulating layer 74 without exposing it to the atmosphere.

[0253] The insulating layer 74 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23 and equal to or lower than the heat-resistant temperature of the light-emitting element 60. It is formed. The insulating layer 74 is preferably formed at a temperature lower than the heat treatment temperature.

[0254] The insulating layer 74 preferably has a configuration including an inorganic insulating film with high barrier properties that can be used for the above-described insulating layer 31, for example. Also, an inorganic insulating film and an organic insulating film may be laminated and used. It may be laminated and used.

[0255] The insulating layer 74 can be formed using the ALD method, the sputtering method, or the like. The ALD method and the sputtering method are preferable because low-temperature film formation is possible. When the ALD method is used, the coverage of the insulating layer 74 is preferably good. Since the ALD method and the sputtering method enable low-temperature film formation, they are preferable. When the ALD method is used, the coverage of the insulating layer 74 becomes good, which is preferable.

[0256] Next, a protective layer 75 is formed on the insulating layer 74 (FIG. 6(A)). As the protective layer 75, an adhesive layer 75b and a substrate 75a may be used as shown in FIG. 4(D). As shown in FIG. 4(D), an adhesive layer 75b and a substrate 75a may be used.

[0257] Next, a separation starting point is formed in the resin layer 23 (FIGS. 6(B1) and (B2)).

[0258] For example, from the side of the protective layer 75, a sharp-shaped instrument 65 such as a blade is inserted inside the end of the resin layer 23, and a cut 64 is made in a frame shape.

[0259] Alternatively, the resin layer 23 may be irradiated with laser light in a frame shape.

[0260] When forming a plurality of display devices (multi-face taking) on a single production substrate, a plurality of display devices can be formed using one resin layer 23. For example, a plurality of display devices are arranged inside the cut 64 in FIG. 6(B2). As a result, a plurality of display devices can be separated from the production substrate all at once. When forming a plurality of display devices (multi-face taking) on a single production substrate, a plurality of display devices can be formed using one resin layer 23. For example, a plurality of display devices are arranged inside the cut 64 in FIG. 6(B2).

[0261] Alternatively, multiple resin layers 23 may be used to separately fabricate the resin layer 23 for each display device. In FIG. 6(B3), an example of forming four resin layers 23 on a fabrication substrate is shown. By providing a cut 64 in a frame shape in each of the four resin layers 23, each display device can be fabricated at a different timing

[0262] and separated from the substrate. In Fabrication Method Example 1, on the metal oxide layer 20, a portion where the resin layer 23 contacts and a portion where the insulating layer 31 contacts are provided. The adhesion (adhesive property) between the metal oxide layer 20 and the insulating layer 31 is higher than the adhesion (adhesive property) between the metal oxide layer 20 and the resin layer 23. Therefore, it is possible to prevent the resin layer 23 from unintentionally peeling off from the metal oxide layer 20. And by forming a starting point for separation, the metal oxide layer 20 and the resin layer 23 can be separated at a desired timing.

[0263] Accordingly, the timing of separation can be controlled, and the force required for separation is small. As a

[0264] result, the yield of the separation process and the fabrication process of the display device can be increased.

[0265] Next, the metal oxide layer 20 and the resin layer 23 are separated (FIG. 7(A)). Then, the substrate 29 is bonded to the exposed resin layer 23 using the adhesive layer 28 (FIG. 7( B)). The substrate 29 can function as a support substrate for the display device. It is preferable to use a film

[0266] By using the peeling method of the present embodiment, the transistor 40 fabricated on the fabrication substrate 14 and the light-emitting element 60 and the like can be peeled off from the fabrication substrate 14 and transferred to the substrate 29.

[0267] For the adhesive layer 28, a material that can be used for the adhesive layer 75b can be applied. For the substrate 29, a material that can be used for the substrate 75a can be applied.

[0268] Note that the resin layer 23 used in the present embodiment may be colored. Therefore, when the light emission of the light-emitting element 60 is extracted through the resin layer 23, the coloring of the resin layer 23 may cause problems such as a decrease in light extraction efficiency, a change in the color tone of the extracted light, and a decrease in display quality. Therefore, it is preferable that the colored resin layer 23 is removed after being exposed by peeling.

[0269] The resin layer 23 can be removed using a wet etching apparatus, a dry etching apparatus, an ashing apparatus, or the like. In particular, it is preferable to remove the resin layer 23 by performing ashing using oxygen plasma.

[0270] In Production Method Example 1, the metal oxide layer 20 and the resin layer 23 (or the first layer 24) are laminated and heat treatment is performed. Thereby, the adhesion or adhesiveness between the metal oxide layer 20 and the resin layer 23 can be reduced. Therefore, without performing laser irradiation on the entire surface of one side of the resin layer 23, the fabrication substrate 14 and the resin layer 23 can be separated. Thereby, a display device can be fabricated at low cost.

[0271] [Configuration Example 1 of Display Device] FIG. 8(A) is a top view of the display device 10A. FIGS. 8(B) and (C) are, respectively, an example of a cross-sectional view of the display unit 381 of the display device 10A and a cross-sectional view of a connection portion with the FPC 372.

[0272] The display device 10A can be manufactured using the above-described manufacturing method example 1. The display device 10A can be held in a bent state or repeatedly bent.

[0273] The display device 10A has a protective layer 75 and a substrate 29. The protective layer 75 side is the display surface of the display device side. The display device 10A has a display unit 381 and a drive circuit unit 382. An FPC 372 is attached to the display device 1 0A.

[0274] The conductive layer 43c and the FPC 372 are electrically connected via a connector 76 (FIGS. 8( B) and (C)). The conductive layer 43c can be formed of the same material and in the same process as the source and drain of the transistor.

[0275] As the connector 76, various anisotropic conductive films (ACF: Anisotropic C onductive Film) and anisotropic conductive pastes (ACP: Anisotrop ic Conductive Paste) etc. can be used.

[0276] The display device shown in FIG. 8(C) does not have the transistor 40 and has the transistor 49 in terms of having no resin layer 23 and having a colored layer 97 on the insulating layer 33, it is different from the configuration of FIG. 8( B). When using the bottom emission type light emitting element 60, the colored layer 97 may be provided on the substrate 29 side rather than the light emitting element 60 side. When the resin layer 23 is colored, the resin By not leaving the oil layer 23 on the display device, the display quality of the display device can be improved.

[0277] A transistor 49 shown in FIG. 8C has the following configuration in addition to the configuration of the transistor 40 shown in FIG. 4, and has a conductive layer 45 which functions as a gate.

[0278] The transistor 49 has a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. By adopting such a configuration, the threshold voltage of the transistor can be controlled. By connecting the two gates together and applying the same signal to them, Such transistors have field effect transistors compared to other transistors. This allows for increased mobility and increased on-current. Furthermore, the area occupied by the circuit portion can be reduced. By using transistors with a large on-state current, it is possible to enlarge the display device, Even if the number of wirings increases when the resolution is increased, the signal delay in each wiring can be reduced. This makes it possible to suppress display unevenness.

[0279] Alternatively, a potential for controlling the threshold voltage is applied to one of the two gates, and a drive potential is applied to the other. By applying a potential for the gate, the threshold voltage of the transistor can be controlled.

[0280] [Production method example 2] First, in the same manner as in the above-mentioned peeling method, the metal oxide layer 20 to the insulating layer 31 are removed from the substrate 14. (Figure 9(A)).

[0281] Next, a transistor 80 is formed on the insulating layer 31 (FIG. 9(B)).

[0282] Here, the case of fabricating a transistor 80 having a metal oxide layer 83 and two gates is shown.

[0283] The transistor 80 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. It is preferably formed at a temperature lower than the heat treatment temperature.

[0284] Specifically, first, a conductive layer 81 is formed on the insulating layer 31. The conductive layer 81 can be formed by depositing a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.

[0285] Subsequently, an insulating layer 82 is formed. The insulating layer 82 can utilize an inorganic insulating film that can be used for the insulating layer 31.

[0286] Subsequently, a metal oxide layer 83 is formed. The metal oxide layer 83 can be formed by depositing a metal oxide film, forming a resist mask, etching the metal oxide film, and then removing the resist mask. The metal oxide layer 83 can utilize a material that can be used for the metal oxide layer 44.

[0287] Subsequently, an insulating layer 84 and a conductive layer 85 are formed. The insulating layer 84 can utilize an inorganic insulating film that can be used for the insulating layer 31. The insulating layer 84 and the conductive layer 85 can be formed by depositing an insulating film that becomes the insulating layer 84 and a conductive film that becomes the conductive layer 85, forming a resist mask, etching the insulating film and the conductive film, and then removing the resist mask.

[0288] Next, an insulating layer 33 covering the metal oxide layer 83, the insulating layer 84, and the conductive layer 85 is formed. ​​​​​​​​​​​The insulating layer 33 can be formed by the same method as the insulating layer 31.

[0289] The insulating layer 33 preferably contains hydrogen. The hydrogen contained in the insulating layer 33 diffuses into the metal oxide layer 83 in contact with the insulating layer 33, and a part of the metal oxide layer 83 becomes lower in resistance. Since a part of the metal oxide layer 83 functions as a low-resistance region, it is possible to increase the on-current of the transistor 80 and improve the field-effect mobility.

[0290] Next, an opening reaching the metal oxide layer 83 is formed in the insulating layer 33.

[0291] Subsequently, the conductive layer 86a and the conductive layer 86b are formed. The conductive layer 86a and the conductive layer 86b can be formed by forming a conductive film, then forming a resist mask, etching the conductive film, and then removing the resist mask. The conductive layer 86a and the conductive layer 86b are each electrically connected to the metal oxide layer 83 through the opening in the insulating layer 33.

[0292] In this way, the transistor 80 can be manufactured (FIG. 9(B)). In the transistor 80, a part of the conductive layer 81 functions as a gate, a part of the insulating layer 84 functions as a gate insulating layer, a part of the insulating layer 82 functions as a gate insulating layer, and a part of the conductive layer 85 functions as a gate. The metal oxide layer 83 has a channel region and a low-resistance region. The channel region overlaps the conductive layer 85 through the insulating layer 84. The low-resistance region has a part connected to the conductive layer 86a and a part connected to the conductive layer 86b.

[0293] Next, from the insulating layer 34 to the light-emitting element 60 is formed on the insulating layer 33 (FIG. 9(C)). These steps can refer to Manufacturing Method Example 1.

[0294] Also, independent of the steps up to FIGS. 9(A) to (C), the steps of FIGS. 10(A) to (C) are performed. . First, in the same manner as the step of forming the metal oxide layer 20 on the production substrate 14, on the production substrate 91 , a metal oxide layer 92 is formed (FIG. 10(A)). Next, in the same manner as the step of forming the resin layer 2 3, a first layer is formed on the metal oxide layer 92 and heat treatment is performed thereby to form a resin layer 93 (FIG. 10(B)). Then, in the same manner as the step of forming the insulating layer 31 on the resin layer 23 , an insulating layer 95 that covers the end portion of the resin layer 93 is formed on the resin layer 93 ( FIG. 10(B)).

[0295] Next, a coloring layer 97 and a light shielding layer 98 are formed on the insulating layer 95 (FIG. 10(C)).

[0296] As the coloring layer 97, a color filter or the like can be used. The coloring layer 97 is arranged so as to overlap with the display region of the light emitting element 60 .

[0297] As the light shielding layer 98, a black matrix or the like can be used. The light shielding layer 98 is arranged so as to overlap with the insulating layer 35.

[0298] Next, the surface on which the transistor 80 or the like of the production substrate 14 is formed and the surface on which the resin layer 93 or the like of the production substrate 91 is formed are bonded together using an adhesive layer 99 (FIG. 10(D)).

[0299] Next, a separation starting point is formed in the resin layer 23 (FIGS. 11(A), (B)). Either the production substrate 14 or the production substrate 91 may be separated first. Here, an example in which the production substrate 14 is separated before the production substrate 91 is shown.

[0300] For example, the resin layer 23 is irradiated with laser light 66 in a frame shape from the side of the fabrication substrate 14 (FIG. 11( The substrate 14 and the substrate 91 are made of glass or the like. This is suitable for use with a hard substrate.

[0301] There is no particular limitation on the laser used to form the starting point of separation. For example, a continuous wave laser Laser light irradiation conditions (frequency, power) can be adjusted. -density, energy density, beam profile, etc.) are determined by the thickness of the substrate and resin layer, material, etc. The above should be taken into consideration and appropriately controlled.

[0302] In the second example of the manufacturing method, the metal oxide layer 20 is provided with a portion where the resin layer 23 is in contact and a portion where the insulating layer 31 is in contact. The adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31 is determined by the metal oxide. The adhesiveness (bonding) between the metal oxide layer 20 and the resin layer 23 is higher than that between the metal oxide layer 20 and the resin layer 23. It is possible to suppress unintentional peeling off from the oxide layer 20. Similarly, on the metal oxide layer 92, The metal oxide layer 92 has a portion that is in contact with the resin layer 93 and a portion that is in contact with the insulating layer 95. The adhesiveness (bonding) between the metal oxide layer 92 and the insulating layer 95 is determined by the adhesiveness (bonding) between the metal oxide layer 92 and the resin layer 93. Therefore, the resin layer 93 is prevented from being unintentionally peeled off from the metal oxide layer 92. It can be suppressed.

[0303] Then, the starting point of separation is formed only in one of the resin layer 23 and the resin layer 93. Since the timing for forming the starting point of separation can be changed depending on the resin layer 93, 14 and the substrate 91 can be separated in separate steps. Furthermore, the yield of the manufacturing process of the display device can be increased.

[0304] The laser beam 66 does not need to irradiate the entire one surface of the resin layer 23, and irradiates it partially. For this reason, an expensive laser device with high running costs is not necessary.

[0305] Next, the production substrate 14 and the transistor 80 are separated (FIG. 12(A)). Here, an example of separating the inner portion irradiated with the laser beam 66 in a frame shape (which can also be said to be the inner portion of the laser beam irradiation region 67 shown in FIG. 11(B)) and the production substrate 14 is shown. Further, FIG. 12(A) shows an example in which separation occurs in the adhesive layer 99 in the outer portion irradiated with the laser beam 66 in a frame shape (the adhesive layer 99 undergoes cohesive failure), but the present invention is not limited to this. For example, on the outer side of the irradiation region 67, separation may occur between the adhesive layer 99 and the insulating layer 95 or the insulating layer 33 (it is also said that interfacial failure or adhesive failure occurs). For example, on the outer side of the irradiation region 67, separation may occur between the adhesive layer 99 and the insulating layer 95 or the insulating layer 33 (it is also said that interfacial failure or adhesive failure occurs). side portion).) and the production substrate 14 is shown. Further, in FIG. 12(A), in the outer portion irradiated with the laser beam 66 in a frame shape, separation occurs in the adhesive layer 99 ( the adhesive layer 99 undergoes cohesive failure) is shown, but the present invention is not limited to this. For example, on the outer side of the irradiation region 67, separation occurs between the adhesive layer 99 and the insulating layer 95 or the insulating layer 33 ( the adhesive layer 99 undergoes cohesive failure), but the present invention is not limited to this. For example, on the outer side of the irradiation region 67, separation occurs between the adhesive layer 99 and the insulating layer 95 or the insulating layer 33 ( it is also said that interfacial failure or adhesive failure occurs). it is also said that interfacial failure or adhesive failure occurs).

[0306] In Production Method Example 2, the metal oxide layer 20 and the resin layer 23 (or the first layer 24) are laminated and heat treatment is performed. Thereby, the adhesiveness or adhesivity between the metal oxide layer 20 and the resin layer 23 can be reduced. Therefore, the production substrate 14 and the resin layer 23 can be separated without performing laser irradiation on the entire one surface of the resin layer 23. Thereby, a display device can be manufactured at low cost. heat treatment is performed. Thereby, the adhesiveness or adhesivity between the metal oxide layer 20 and the resin layer 23 can be reduced. Therefore, the production substrate 14 and the resin layer 23 can be separated without performing laser irradiation on the entire one surface of the resin layer 23. Thereby, a display device can be manufactured at low cost. heat treatment is performed. Thereby, the adhesiveness or adhesivity between the metal oxide layer 20 and the resin layer 23 can be reduced. Therefore, the production substrate 14 and the resin layer 23 can be separated without performing laser irradiation on the entire one surface of the resin layer 23. Thereby, a display device can be manufactured at low cost. device can be manufactured.

[0307] Next, the resin layer 23 exposed by separating from the production substrate 14 and the substrate 29 are bonded together using the adhesive layer 2 8 (FIG. 12(B)). The substrate 29 can function as a support substrate for the display device. device.

[0308] Next, a separation starting point is formed in the resin layer 93 (FIG. 13(A)).

[0309] In FIG. 13(A), from the substrate 29 side, a sharp tool 65 such as a blade is inserted inside the end of the resin layer 93, and a cut is made in a frame shape. This is suitable when using resin for the substrate 29. Or, similarly to when forming a separation starting point in the resin layer 23, laser light may be irradiated in a frame shape from the production substrate 91 side onto the resin layer 9 3.

[0310] By forming a separation starting point, the production substrate 91 and the resin layer 93 can be separated at a desired timing. Therefore, the separation timing can be controlled, and the force required for separation is small. This can increase the yield of the separation process and the manufacturing process of the display device.

[0311] Next, the production substrate 91 and the transistor 80 are separated (FIG. 13(B)). Here, an example of separating the inner portion with a cut in a frame shape from the production substrate 91 is shown. In Manufacturing Method Example 2, the metal oxide layer 92 and the resin layer 93 (or the first layer) are laminated and heat-treated. This can reduce the adhesion or adhesiveness between the metal oxide layer 92 and the resin layer 93. Therefore, the production substrate 91 and the resin layer 93 can be separated without performing laser irradiation on the entire surface of one side of the resin layer 93. This can manufacture a display device at low cost. Next, the resin layer 93 exposed by separating from the production substrate 91 and the substrate 22 are bonded together using the adhesive layer 1 3 (FIG. 14(A)). The substrate 22 can function as a support substrate for the display device.

[0312]

[0313]

[0314]

[0315] ​​​​​​​​​​In FIG. 14(A), the light emitted from the light-emitting element 60 is taken out to the outside of the display device through the colored layer 97, the insulating layer 95, and the resin layer 9 3. Therefore, it is preferable that the transmittance of visible light of the resin layer 93 is high. In one aspect of the present invention, the thickness of the resin layer 93 can be reduced. Therefore, the transmittance of visible light of the resin layer 93 can be increased, and a decrease in the light extraction efficiency of the light-emitting element 60 can be suppressed.

[0316] The resin layer 93 may be removed. Thereby, the light extraction efficiency of the light-emitting element 60 can be further increased FIG. 14(B) shows an example in which the resin layer 93 is removed and the substrate 22 is bonded to the insulating layer 9 5 using the adhesive layer 13.

[0317] A material that can be used for the adhesive layer 75b can be applied to the adhesive layer 13.

[0318] A material that can be used for the substrate 75a can be applied to the substrate 22.

[0319] Fabrication method example 2 is an example of fabricating a display device by performing the peeling method of one aspect of the present invention twice. In one aspect of the present invention, since all the functional elements and the like constituting the display device are formed on the fabrication substrate , even when fabricating a display device with high fineness, a high positional alignment accuracy is not required for the flexible substrate. Therefore, the flexible substrate can be easily attached .

[0320] [Modification example] In fabrication method example 2 (FIG. 10(D)), the adhesive layer 99 overlaps both the portion where the metal oxide layer 20 and the insulating layer 31 are in contact and the portion where the metal oxide layer 92 and the insulating layer 95 are in contact is provided.

[0321] The adhesion (adhesive property) between the metal oxide layer 20 and the insulating layer 31, and between the metal oxide layer 92 and the insulating layer 95 is higher than the adhesion (adhesive property) between the metal oxide layer 20 and the resin layer 23, and between the metal oxide layer 92 and the resin layer 93, respectively.

[0322] When peeling occurs at the interface between the metal oxide layer 20 and the insulating layer 31 or at the interface between the metal oxide layer 92 and the insulating layer 95 there may be a decrease in the peeling yield, such as poor peeling. Therefore, after forming a starting point for separation in a frame shape in the resin layer, only the portion overlapping the resin layer is separated from the production substrate The process is suitable.

[0323] On the other hand, as shown in FIGS. 15(A) and (B), the adhesive layer 99 may be configured not to overlap the portion where the metal oxide layer 20 and the insulating layer 3 1 are in contact, and the portion where the metal oxide layer 92 and the insulating layer 95 are in contact.

[0324] For example, when an adhesive with low fluidity or an adhesive sheet is used for the adhesive layer 99, it is easy to form the adhesive layer 9 9 in an island shape (FIG. 15(A)).

[0325] Alternatively, a frame-shaped partition 96 may be formed, and the adhesive layer 99 may be filled and cured inside the partition 96 (FIG. 15(B)).

[0326] When the partition 96 is used as a component of the display device, it is preferable to use a cured resin for the partition 96. At this time, it is also preferable that the partition 96 does not overlap the portion where the metal oxide layer 20 and the insulating layer 31 are in contact and the portion where the metal oxide layer 92 and the insulating layer 95 are in contact.

[0327] ​​​​When the partition wall 96 is not used as a component of the display device, it is preferable to use an uncured or semi-cured resin for the partition wall 96. At this time, one or both of the portions where the partition wall 96 is in contact with the metal oxide layer 20 and the insulating layer 31, and the portions where the metal oxide layer 92 and the insulating layer 95 are in contact with each other may be overlapped.

[0328] In this embodiment, an uncured resin is used for the partition wall 96, and an example in which the partition wall 96 does not overlap with the portions where the metal oxide layer 20 and the insulating layer 31 are in contact with each other, and the portions where the metal oxide layer 92 and the insulating layer 95 are in contact with each other is shown.

[0329] A method for forming a separation starting point in a configuration where the adhesive layer 99 does not overlap with the portions where the metal oxide layer 20 and the insulating layer 31 are in contact with each other, and the portions where the metal oxide layer 92 and the insulating layer 95 are in contact with each other will be described. Hereinafter, an example of peeling the production substrate 91 will be shown. The same method can be used when peeling the production substrate 14.

[0330] In FIGS. 16(A) to (E), the irradiation position of the laser beam 66 when separating the production substrate 91 and the resin layer 93 will be described.

[0331] As shown in FIG. 16(A), by irradiating the laser beam 66 at at least one location in the region where the resin layer 93 and the adhesive layer 99 overlap, a separation starting point can be formed.

[0332] Since it is preferable that the force for separating the production substrate 91 and the resin layer 93 is concentrated at the separation starting point, it is preferable to form the separation starting point near the end rather than at the center of the adhesive layer 99. In particular, among the areas near the end, it is preferable to form the separation starting point near the corner rather than near the side.

[0333] ​​​​​​FIG. 16(B) to (E) show an example of the irradiation region 67 of the laser beam.

[0334] In FIG. 16(B), one irradiation region 67 of the laser beam is shown at a corner of the adhesive layer 99.

[0335] By irradiating the laser beam continuously or intermittently, a starting point of separation in a solid line shape or a broken line shape can be formed. In FIG. 16(C), three irradiation regions 67 of the laser beam are shown at the corners of the adhesive layer 99. In FIG. 16(D), an example is shown where the irradiation region 67 of the laser beam is in contact with one side of the adhesive layer 99 and extends along one side of the adhesive layer 99. As shown in FIG. 16(E), the irradiation region 67 of the laser beam may be located not only in the region where the adhesive layer 99 and the resin layer 93 overlap, but also in the region where the uncured partition wall 96 and the resin layer 93 overlap.

[0336] Thereafter, the production substrate 91 and the resin layer 93 can be separated. Note that a part of the partition wall 96 may remain on the production substrate 14 side. The partition wall 96 may be removed or may proceed to the next process without being removed.

[0337] [Configuration Example 2 of Display Device] FIG. 17(A) is a top view of the display device 10B. FIG. 17(B) is an example of a cross-sectional view of the display unit 381 of the display device 10B and a cross-sectional view of the connection portion with the FPC 372.

[0338] The display device 10B can be manufactured using the above manufacturing method example 2. The display device 10B can be held in a bent state or repeatedly bent.

[0339] The display device 10B includes a substrate 22 and a substrate 29. The substrate 22 side is the display side of the display device 10B ​​​​​​It is on the front side. The display device 10B has a display unit 381 and a drive circuit unit 382. The display device 10B has an FPC 372 attached thereto.

[0340] It is preferable to use a film for the substrate 22 and the substrate 29, and particularly preferable to use a resin film. This enables the display device to be reduced in weight and thickness. In addition, a display device using a film substrate is less likely to be damaged than when using glass, metal, etc. Also, the flexibility of the display device can be enhanced.

[0341] The conductive layer 86c and the FPC 372 are electrically connected via the connector 76 (Fig. 17 (B)). The conductive layer 86c can be formed of the same material and in the same process as the source and drain of the transistor.

[0342] [Example of a laminate manufacturing apparatus] Next, an example of a laminate manufacturing apparatus will be described with reference to Fig. 18. The laminate manufacturing apparatus shown in Fig. 18 can peel a layer to be peeled from a manufactured substrate using the peeling method of the present embodiment and transfer the layer to be peeled to another substrate. Using the laminate manufacturing apparatus shown in Fig. 18, laminates such as semiconductor devices and display devices can be manufactured.

[0343] The laminate manufacturing apparatus shown in Fig. 18 includes a plurality of transport rollers (transport rollers 643, 644, 64 5, etc.), a tape reel 602, a take-up reel 683, a direction-changing roller 604, and a pressing roller 606.

[0344] The tape reel 602 can unwind a roll sheet-shaped support 601. The speed at which the support 601 is unwound is preferably variable. For example, by making the speed relatively slow, This can suppress peeling defects in the laminate or the occurrence of cracks in the peeled member.

[0345] The take-up reel 683 can wind up the laminate 59.

[0346] Using the tape reel 602 and the take-up reel 683, tension can be applied to the support 601. This is possible.

[0347] The support 601 is fed out continuously or intermittently. Continuously feeding out the support 601 is preferable because peeling can be performed at a uniform speed and with a uniform force. In the peeling process it is preferable that the progress of peeling continues without stopping midway, and it is more preferable to progress peeling at a constant speed. When the progress of peeling stops midway and peeling is started again from the said area, unlike when the progress of peeling is continuous, strain etc. is applied to the said area. Therefore, changes in the microstructure of the said area, or changes in the characteristics of electronic devices etc. existing in the said area occur. For example, in a display device etc., the influence may appear in the display.

[0348] As the support 601, a roll sheet-like film made of an organic resin, metal, alloy, glass, etc. can be used.

[0349] In FIG. 18, as the support 601, a member that constitutes a device to be manufactured (for example, a flexible device ) such as a flexible substrate together with the remainder 56a is used. The support 601 may be a carrier tape or the like, or a member that does not constitute the device to be manufactured.

[0350] The plurality of transport rollers can transport the laminate 56. The transport mechanism for transporting the laminate 56 is not limited to transport rollers, and a belt conveyor, a transport robot, etc. may also be used. Alternatively, the laminate 56 may be disposed on the stage of the transport mechanism.

[0351] The transport roller 643, the transport roller 644, or the transport roller 645 is one of a plurality of transport rollers arranged side by side, provided at a predetermined interval, and rotationally driven in the delivery direction of the laminate 56 (or one surface layer 56b) (the clockwise rotation direction indicated by the solid line arrow). The plurality of transport rollers arranged side by side are rotationally driven by a drive unit (such as a motor) (not shown). The transport roller 643, the transport roller 644, or the transport roller 645 is one of a plurality of transport rollers arranged side by side, provided at a predetermined interval, and rotationally driven in the delivery direction of the laminate 56 (or one surface layer 56b) (the clockwise rotation direction indicated by the solid line arrow). The plurality of transport rollers arranged side by side are rotationally driven by a drive unit (such as a motor) (not shown). The transport roller 643, the transport roller 644, or the transport roller 645 is one of a plurality of transport rollers arranged side by side, provided at a predetermined interval, and rotationally driven in the delivery direction of the laminate 56 (or one surface layer 56b) (the clockwise rotation direction indicated by the solid line arrow). The plurality of transport rollers arranged side by side are rotationally driven by a drive unit (such as a motor) (not shown). The transport roller 643, the transport roller 644, or the transport roller 645 is one of a plurality of transport rollers arranged side by side, provided at a predetermined interval, and rotationally driven in the delivery direction of the laminate 56 (or one surface layer 56b) (the clockwise rotation direction indicated by the solid line arrow). The plurality of transport rollers arranged side by side are rotationally driven by a drive unit (such as a motor) (not shown).

[0352] The feed direction of the support 601 can be changed by the direction-changing roller 604. In FIG. 18, an example where the direction-changing roller 604 is located between the tape reel 602 and the pressing roller 606 is shown. In FIG. 18, an example where the direction-changing roller 604 is located between the tape reel 602 and the pressing roller 606 is shown. In FIG. 18, an example where the direction-changing roller 604 is located between the tape reel 602 and the pressing roller 606 is shown.

[0353] The support 601 is attached to the laminate 56 (the remaining portion 56a) by the pressing roller 606 and the transport roller 645. The support 601 is attached to the laminate 56 (the remaining portion 56a) by the pressing roller 606 and the transport roller 645.

[0354] In the configuration of FIG. 18, it is possible to suppress the support 601 from coming into contact with the laminate 56 before reaching the pressing roller 606. Therefore, it is possible to suppress the entry of air bubbles between the support 601 and the laminate 56. In the configuration of FIG. 18, it is possible to suppress the support 601 from coming into contact with the laminate 56 before reaching the pressing roller 606. Therefore, it is possible to suppress the entry of air bubbles between the support 601 and the laminate 56. In the configuration of FIG. 18, it is possible to suppress the support 601 from coming into contact with the laminate 56 before reaching the pressing roller 606. Therefore, it is possible to suppress the entry of air bubbles between the support 601 and the laminate 56.

[0355] The pressing roller 606 is rotationally driven by a drive unit (such as a motor) (not shown). When the pressing roller 606 rotates, a force is applied to peel off the remaining portion 56a from the laminate 56, and the remaining portion 56a is peeled off. At this time, it is preferable that a peeling starting point is formed on the laminate 56. The remaining portion 56a starts to peel off from the peeling starting point. Then, the laminate 56 is separated into the remaining portion 56a and one surface layer 56b. The pressing roller 606 is rotationally driven by a drive unit (such as a motor) (not shown). When the pressing roller 606 rotates, a force is applied to peel off the remaining portion 56a from the laminate 56, and the remaining portion 56a is peeled off. At this time, it is preferable that a peeling starting point is formed on the laminate 56. The remaining portion 56a starts to peel off from the peeling starting point. Then, the laminate 56 is separated into the remaining portion 56a and one surface layer 56b. The pressing roller 606 is rotationally driven by a drive unit (such as a motor) (not shown). When the pressing roller 606 rotates, a force is applied to peel off the remaining portion 56a from the laminate 56, and the remaining portion 56a is peeled off. At this time, it is preferable that a peeling starting point is formed on the laminate 56. The remaining portion 56a starts to peel off from the peeling starting point. Then, the laminate 56 is separated into the remaining portion 56a and one surface layer 56b. The pressing roller 606 is rotationally driven by a drive unit (such as a motor) (not shown). When the pressing roller 606 rotates, a force is applied to peel off the remaining portion 56a from the laminate 56, and the remaining portion 56a is peeled off. At this time, it is preferable that a peeling starting point is formed on the laminate 56. The remaining portion 56a starts to peel off from the peeling starting point. Then, the laminate 56 is separated into the remaining portion 56a and one surface layer 56b. The pressing roller 606 is rotationally driven by a drive unit (such as a motor) (not shown). When the pressing roller 606 rotates, a force is applied to peel off the remaining portion 56a from the laminate 56, and the remaining portion 56a is peeled off. At this time, it is preferable that a peeling starting point is formed on the laminate 56. The remaining portion 56a starts to peel off from the peeling starting point. Then, the laminate 56 is separated into the remaining portion 56a and one surface layer 56b.

[0356] The mechanism for peeling the remainder 56a from the laminate 56 is not limited to the pressing roller 606, and a structure having a convex surface (which can also be called a convex curved surface or a convex-shaped curved surface) can be applied. For example, a cylindrical (including cylindrical, straight cylindrical, elliptical cylindrical, parabolic cylindrical, etc.), spherical and other structures can be used. For example, a roller such as a drum-shaped roller can be used. As an example of the shape of the structure, a columnar body whose bottom surface is composed of a curve (such as a cylinder whose bottom surface is a perfect circle or an elliptical cylinder whose bottom surface is an ellipse) or a columnar body whose bottom surface is composed of a straight line and a curve (such as a columnar body whose bottom surface is a semi-circle or a semi-ellipse) can be mentioned. When the shape of the structure is any of these columnar bodies, the convex surface corresponds to the curved surface portion of the columnar body.

[0357] Examples of the material of the structure include metal, alloy, organic resin, rubber, etc. The structure may have an internal space or cavity. Examples of rubber include natural rubber, urethane rubber, nitrile rubber, neoprene rubber, etc. When using rubber, it is preferable to use a material that is less likely to generate electricity due to friction or peeling, or to take measures to prevent static electricity. For example, the pressing roller 606 shown in FIG. 18 has a hollow cylinder 606a made of rubber or organic resin and a cylinder 606b made of metal or alloy located inside the cylinder 606a.

[0358] The rotational speed of the pressing roller 606 is preferably variable. By controlling the rotational speed of the pressing roller 606, the peeling yield can be further increased.

[0359] The pressing roller 606 and the plurality of conveying rollers may be movable in at least one direction (for example, up and down, left and right, or front and back, etc.). The convex surface of the pressing roller 606 and the support surface of the conveying roller It is preferable that the distance between them is variable because laminates of various thicknesses can be peeled off.

[0360] There is no particular limitation on the angle at which the pressing roller 606 folds the support 601. In FIG. 18, an example is shown in which the angle at which the pressing roller 606 folds the support 601 is an obtuse angle.

[0361] The laminate manufacturing apparatus shown in FIG. 18 further has a roller 617. The roller 617 can send the support 601 from the pressing roller 606 to the take-up reel 683 along the convex surface.

[0362] The roller 617 is movable in one or more directions.

[0363] By moving the axis of the roller 617, the roller 617 can apply tension to the support 601. That is, the roller 617 can be called a tension roller. Specifically, the support 601 can be pulled in the feed direction changed by the pressing roller 606.

[0364] By moving the axis of the roller 617, the roller 617 can control the angle at which the pressing roller 606 folds the support 601.

[0365] The roller 617 can fold the support 601 and change the feed direction of the support 601. For example, the feed direction of the support 601 may be changed to the horizontal direction. Or, after the roller 617 folds the support 601 and changes the feed direction of the support 601, the feed direction of the support 601 may be further changed by a direction-changing roller 607 located between the roller 617 and the take-up reel 683, and the feed direction of the support 601 may be made horizontal.

[0366] ​​​​​​​The manufacturing apparatus for the laminate shown in FIG. 18 further includes guide rollers (guide rollers 631, 632 , 633, etc.), a take-up reel 613, a liquid supply mechanism 659, a drying mechanism 614, and ionizers (ionizers 639, 620).

[0367] The manufacturing apparatus for the laminate may have a guide roller for guiding the support 601 to the take-up reel 683. The guide roller may be single or plural. Like the guide roller 6 32, the guide roller may be able to apply tension to the support 601.

[0368] A tape 600 (also called a separator film) may be adhered to at least one surface of the support 601. At this time, it is preferable that the manufacturing apparatus for the laminate has a reel capable of winding the tape 600 adhered to one surface of the support 601. In FIG. 18, an example is shown in which the take-up reel 613 is positioned between the tape reel 602 and the pressing roller 606. Further, the manufacturing apparatus for the laminate may have a guide roller 634. The guide roller 634 can guide the tape 600 to the take-up reel 613.

[0369] The manufacturing apparatus for the laminate may have a drying mechanism 614. Since the functional elements (for example, transistors and thin film integrated circuits) included in the remainder 56a are vulnerable to static electricity, it is preferable to supply a liquid to the interface between the remainder 5 6a and one surface layer 56b or to perform peeling while supplying a liquid to the interface. Further, the presence of a liquid at the progress part of peeling can reduce the force required for peeling. Using the liquid supply mechanism 659, peeling is performed while supplying a liquid to the interface. ​​​​​​It can be separated. If the liquid volatilizes while remaining attached to the remainder 56a, a watermark may be formed. Therefore, it is preferable to remove the liquid immediately after peeling. Thus, it is preferable to blow air onto the remainder 56a containing the functional element to remove the droplets remaining on the remainder 56a. Thereby, the generation of watermarks can be suppressed. Further, a carrier plate 609 may be provided to prevent the support 601 from being deflected.

[0370] While transporting the support 601 in an oblique direction with respect to the horizontal plane, it is preferable to flow an air current downward along the inclination of the support 601 to drop the

[0371] droplets downward. The transport direction of the support 601 can be perpendicular to the horizontal plane, but when it is in an oblique direction with respect to the horizontal plane, the support 601

[0372] during transport becomes more stable and vibration can be suppressed. During the process, at positions where static electricity may be generated, it is preferable to use an electrostatic eliminator provided in the laminate manufacturing apparatus. The electrostatic

[0373] eliminator is not particularly limited, and for example, an ionizer such as a corona discharge method, a soft X-ray method, or an ultraviolet method can be used. In particular, in the process of bonding two members and the process of separating one member, it is preferable to use an ionizer respectively.

[0374] For example, using the ionizer 639, ions are generated near the interface between the remainder 56a Irradiate it to remove static electricity while separating the laminate 56 into the remaining part 56a and one surface layer 56b. This is preferable.

[0375] The laminate manufacturing apparatus may have a substrate load cassette 641 and a substrate unload cassette 642. For example, the laminate 56 can be supplied to the substrate load cassette 641. The substrate load cassette 641 can supply the laminate 56 to a transport mechanism or the like. Also, one surface layer 56b can be supplied to the substrate unload cassette 642.

[0376] In the laminate manufacturing apparatus shown in FIG. 18, a support 601 is attached to the laminate 56, and by pulling the support 601, the remaining part 56a is peeled off from the laminate 56. Using the support 601, the laminate 56 can be automatically separated, which can shorten the working time and improve the manufacturing yield of the product. This is possible.

[0377] The remaining part 56a separated from one surface layer 56b is bonded to a support 671 using an adhesive. As a result, a laminate 59 in which the support 601, the remaining part 56a, and the support 671 are laminated in this order can be manufactured. This is possible.

[0378] The tape reel 672 can unwind a roll sheet-shaped support 671. The same material as the support 601 can be used for the support 671. This is possible.

[0379] Tension can be applied to the support 671 using the tape reel 672 and the take-up reel 683. This is possible.

[0380] The laminate manufacturing apparatus may have guide rollers 677, 678, and 679 that guide the support 671 to the take-up reel 683. This is possible.

[0381] The feed direction of the support 671 can be changed by the direction-changing roller 676.

[0382] The pressing roller 675 presses the remaining portion 56a and the support 671 fed out by the tape reel 672. while bonding them together. This can suppress the entry of air bubbles between the support 671 and the remaining portion 56a. It is possible to prevent air bubbles from mixing in.

[0383] The release tape 670 may be bonded to at least one surface of the support 671. The reel 673 can wind up the release tape 670. The guide roller 674 can guide the release tape 670 to the reel 673. The reel 673 can wind up the release tape 670. The guide roller 674 can guide the release tape 670 to the reel 673. The produced laminate 59 may be wound up or divided. In FIG. 18, an example is shown in which the winding reel 683 winds up the laminate 59. It may have guide rollers such as guide rollers 665 and 666 for guiding the laminate 59 to the winding reel 683.

[0384] In the laminate manufacturing apparatus shown in FIG. 18, the pressing roller 606 is used to peel the remaining portion 56a from the laminate 56, and the pressing roller 675 can be used to transfer the remaining portion 56a to the support 671. In the laminate manufacturing apparatus shown in FIG. 18, the pressing roller 606 is used to peel the remaining portion 56a from the laminate 56, and the pressing roller 675 can be used to transfer the remaining portion 56a to the support 671. As described above, in the peeling method of the present embodiment, a metal oxide layer and a resin layer are laminated on a production substrate, and the peelability of the resin layer with respect to the metal oxide layer is controlled by heating. Since a process that requires an expensive apparatus such as irradiation with a linear laser beam is unnecessary, the cost is low. Also, by providing a portion where the resin layer contacts the metal oxide layer and a portion where the insulating layer contacts, a desired type

[0385] In the laminate manufacturing apparatus shown in FIG. 18, the pressing roller 606 is used to peel the remaining portion 56a from the laminate 56, and the pressing roller 675 can be used to transfer the remaining portion 56a to the support 671. 6a is peeled off, and the remaining portion 56a can be transferred to the support 671 using the pressing roller 675. is possible.

[0386] As described above, in the peeling method of the present embodiment, a metal oxide layer and a resin layer are laminated on a production substrate, and the peelability of the resin layer with respect to the metal oxide layer is controlled by heating. Since a process that requires an expensive apparatus such as irradiation with a linear laser beam is unnecessary, the cost is low. Also, by providing a portion where the resin layer contacts the metal oxide layer and a portion where the insulating layer contacts, a desired type is laminated, and the peelability of the resin layer with respect to the metal oxide layer is controlled by heating. Since a process that requires an expensive apparatus such as irradiation with a linear laser beam is unnecessary, the cost is low. Also, by providing a portion where the resin layer contacts the metal oxide layer and a portion where the insulating layer contacts, a desired type is laminated, and the peelability of the resin layer with respect to the metal oxide layer is controlled by heating. Since a process that requires an expensive apparatus such as irradiation with a linear laser beam is unnecessary, the cost is low. Also, by providing a portion where the resin layer contacts the metal oxide layer and a portion where the insulating layer contacts, a desired type is laminated, and the peelability of the resin layer with respect to the metal oxide layer is controlled by heating. Since a process that requires an expensive apparatus such as irradiation with a linear laser beam is unnecessary, the cost is low. Also, by providing a portion where the resin layer contacts the metal oxide layer and a portion where the insulating layer contacts, a desired type With Ming, the resin layer can be peeled off from the production substrate. Therefore, using the peeling method of this embodiment, a display device or the like can be produced at low cost and with high mass productivity.

[0387] This embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0388] (Embodiment 2) In this embodiment, a method for manufacturing a display device according to an aspect of the present invention will be described with reference to FIGS. 19 to 23.

[0389] In this embodiment, the case of using low-temperature polycrystalline silicon (LTPS) in the channel formation region of the transistor will be described.

[0390] When using LTPS, the resin layer is preferably formed using a material with high heat resistance. Furthermore, the resin layer is preferably formed as a thick film. This enables a high-temperature process and can reduce damage in the laser crystallization process.

[0391] First, a metal oxide layer 20 is formed on the production substrate 14 (FIG. 19(A)). For the material and formation method of the metal oxide layer 20, reference can be made to Embodiment 1.

[0392] Next, a first layer 24 is formed on the metal oxide layer 20 (FIG. 19(B)).

[0393] For the material and formation method of the first layer 24, reference can be made to Embodiment 1. In this embodiment, the heat resistance of the material of the first layer 24 used is preferably sufficiently high.

[0394] Next, a heat treatment is performed on the first layer 24 having a desired shape to form the resin layer 23. (FIG. 19(C)). Here, an island-shaped resin layer 23 is formed.

[0395] The conditions for the heat treatment can refer to Embodiment 1.

[0396] In this embodiment, since a material with high heat resistance is used for the material of the first layer 24, a resin layer 23 with high heat resistance can be formed.

[0397] In this embodiment, since a material with high heat resistance is used for the material of the first layer 24, the heat treatment can be performed at a temperature higher than the heating temperature shown in Embodiment 1. For example, the temperature of the heat treatment is preferably 400°C or higher and 600°C or lower, more preferably 450°C or higher and 550°C or lower.

[0398] The thickness of the resin layer 23 is preferably 10 μm or more and 200 μm or less, more preferably 10 μm or more and 100 μm or less, and even more preferably 10 μm or more and 50 μm or less. Since the resin layer 23 is thick enough, the damage in the laser crystallization process can be mitigated. Also, the rigidity of the display device can be increased.

[0399] The 5% weight loss temperature of the resin layer 23 is preferably 400°C or higher and 600°C or lower, more preferably 450°C or higher and 600°C or lower, and even more preferably 500°C or higher and 600°C or lower.

[0400] Next, an insulating layer 31 is formed on the production substrate 14 and on the resin layer 23 (FIG. 19(D)).

[0401] The insulating layer 31 is formed at a temperature equal to or lower than the heat resistance temperature of the resin layer 23. The insulating layer 31 is preferably formed at a temperature lower than the temperature of the heat treatment. ​​​​​​​​​

[0402] The insulating layer 31 can be used as a barrier layer to prevent impurities contained in the resin layer 23 from diffusing into the transistors and display elements formed later. For example, when the resin layer 23 is heated, it is preferable that the insulating layer 31 prevents moisture and the like contained in the resin layer 23 from diffusing into the transistors and display elements. Therefore, the insulating layer 31 preferably has high barrier properties. The insulating layer 31 can be used as a barrier layer to prevent impurities contained in the resin layer 23 from diffusing into the transistors and display elements formed later. For example, when the resin layer 23 is heated, it is preferable that the insulating layer 31 prevents moisture and the like contained in the resin layer 23 from diffusing into the transistors and display elements. Therefore, the insulating layer 31 preferably has high barrier properties. The insulating layer 31 can be used as a barrier layer to prevent impurities contained in the resin layer 23 from diffusing into the transistors and display elements formed later. For example, when the resin layer 23 is heated, it is preferable that the insulating layer 31 prevents moisture and the like contained in the resin layer 23 from diffusing into the transistors and display elements. Therefore, the insulating layer 31 preferably has high barrier properties. The insulating layer 31 can be used as a barrier layer to prevent impurities contained in the resin layer 23 from diffusing into the transistors and display elements formed later. For example, when the resin layer 23 is heated, it is preferable that the insulating layer 31 prevents moisture and the like contained in the resin layer 23 from diffusing into the transistors and display elements. Therefore, the insulating layer 31 preferably has high barrier properties.

[0403] The materials exemplified in Embodiment 1 can be used for the insulating layer 31.

[0404] Next, a transistor 140 is formed on the insulating layer 31 (FIGS. 19(E), 20(A) to FIG. 20(E)).

[0405] Here, a case where a top-gate transistor having LTPS in the channel formation region is manufactured as the transistor 140 is shown. Here, a case where a top-gate transistor having LTPS in the channel formation region is manufactured as the transistor 140 is shown.

[0406] First, a semiconductor film is formed on the insulating layer 31 using a sputtering method, a CVD method, or the like. In this embodiment, an amorphous silicon film 161 having a thickness of 50 nm is formed using a plasma CVD apparatus. First, a semiconductor film is formed on the insulating layer 31 using a sputtering method, a CVD method, or the like. In this embodiment, an amorphous silicon film 161 having a thickness of 50 nm is formed using a plasma CVD apparatus. First, a semiconductor film is formed on the insulating layer 31 using a sputtering method, a CVD method, or the like. In this embodiment, an amorphous silicon film 161 having a thickness of 50 nm is formed using a plasma CVD apparatus.

[0407] Next, it is preferable to perform a heat treatment on the amorphous silicon film 161. Thereby, hydrogen can be desorbed from the amorphous silicon film 161. Specifically, it is preferable to heat at a temperature of 400°C or higher and 550°C or lower. For example, by setting the hydrogen content of the amorphous silicon film 161 to 5 atom% or less, the manufacturing yield in the crystallization process can be increased. Note that when the hydrogen content of the amorphous silicon film 161 is low, the heat treatment may be omitted. Next, it is preferable to perform a heat treatment on the amorphous silicon film 161. Thereby, hydrogen can be desorbed from the amorphous silicon film 161. Specifically, it is preferable to heat at a temperature of 400°C or higher and 550°C or lower. For example, by setting the hydrogen content of the amorphous silicon film 161 to 5 atom% or less, the manufacturing yield in the crystallization process can be increased. Note that when the hydrogen content of the amorphous silicon film 161 is low, the heat treatment may be omitted. Next, it is preferable to perform a heat treatment on the amorphous silicon film 161. Thereby, hydrogen can be desorbed from the amorphous silicon film 161. Specifically, it is preferable to heat at a temperature of 400°C or higher and 550°C or lower. For example, by setting the hydrogen content of the amorphous silicon film 161 to 5 atom% or less, the manufacturing yield in the crystallization process can be increased. Note that when the hydrogen content of the amorphous silicon film 161 is low, the heat treatment may be omitted. Next, it is preferable to perform a heat treatment on the amorphous silicon film 161. Thereby, hydrogen can be desorbed from the amorphous silicon film 161. Specifically, it is preferable to heat at a temperature of 400°C or higher and 550°C or lower. For example, by setting the hydrogen content of the amorphous silicon film 161 to 5 atom% or less, the manufacturing yield in the crystallization process can be increased. Note that when the hydrogen content of the amorphous silicon film 161 is low, the heat treatment may be omitted. Next, it is preferable to perform a heat treatment on the amorphous silicon film 161. Thereby, hydrogen can be desorbed from the amorphous silicon film 161. Specifically, it is preferable to heat at a temperature of 400°C or higher and 550°C or lower. For example, by setting the hydrogen content of the amorphous silicon film 161 to 5 atom% or less, the manufacturing yield in the crystallization process can be increased. Note that when the hydrogen content of the amorphous silicon film 161 is low, the heat treatment may be omitted. Next, it is preferable to perform a heat treatment on the amorphous silicon film 161. Thereby, hydrogen can be desorbed from the amorphous silicon film 161. Specifically, it is preferable to heat at a temperature of 400°C or higher and 550°C or lower. For example, by setting the hydrogen content of the amorphous silicon film 161 to 5 atom% or less, the manufacturing yield in the crystallization process can be increased. Note that when the hydrogen content of the amorphous silicon film 161 is low, the heat treatment may be omitted.

[0408] In this embodiment, since the heat resistance of the resin layer 23 is high, the amorphous silicon film 161 can be heated at a high temperature. As a result, hydrogen in the amorphous silicon film 161 can be sufficiently desorbed, and the production yield in the crystallization process can be increased.

[0409] Next, by crystallizing the semiconductor film, a semiconductor film 162 having a crystal structure is formed (Fig. 20(A)).

[0410] The semiconductor film can be crystallized by irradiating a laser beam from above the semiconductor film. As the laser beam, for example, a wavelength of 193 nm, 248 nm, 308 nm, or 351 nm can be used. Alternatively, the semiconductor film may be crystallized using a metal catalyst element.

[0411] In this embodiment, since the heat resistance of the resin layer 23 is high and the resin layer 23 is formed as a thick film, the damage during crystallization can be alleviated.

[0412] Next, channel doping may be performed on the semiconductor film 162 having a crystal structure.

[0413] Next, the semiconductor film 162 having a crystal structure is processed to form island-shaped semiconductor films.

[0414] As a method for processing the semiconductor film, either or both of a wet etching method and a dry etching method can be used.

[0415] Next, an insulating layer 163 and a conductive layer 164 are formed on the insulating layer 31 and the semiconductor film. The insulating layer 163 can utilize an inorganic insulating film that can be used for the insulating layer 31. The insulating layer 163 and the conductive After forming an insulating film that becomes the insulating layer 163 and a conductive film that becomes the conductive layer 164 , a mask is formed, and after etching the insulating film and the conductive film, the mask is removed to form the electric layer 164 in this way.

[0416] By adding an impurity element to a part of the semiconductor film, the channel region 162a and the low-resistance region 1 62b (which can also be said to be the source region and the drain region) are formed. By adding the impurity element multiple times (performing light doping and heavy doping), an LDD (Lightly Doped Drain) region may be formed between the channel region 162a and the low-resistance region 162b. The insulating layer 163, the conductive layer 164, and further the mask used for manufacturing these can function as a mask during the addition of the impurity element. When manufacturing an n-channel type transistor, as the impurity element, an impurity that imparts n-type conductivity to the semiconductor film is used. For example, elements such as P, As, Sb, S, Te, Se, etc. can

[0417] be used. When manufacturing a p-channel type transistor, as the impurity element, an impurity that imparts p-type conductivity to the semiconductor film is used. For example, elements such as B, Al, Ga, etc. can be used for this.

[0418] Next, an insulating layer 165 that covers the semiconductor layer, the insulating layer 163, and the conductive layer 164 is formed (FIG. 2 0(C)). The insulating layer 165 can be formed by the same method as the insulating layer 31. .

[0419] Next, a heat treatment is performed. Thereby, the impurities added to the semiconductor film are activated. The said heat treatment

[0420] treatment The heat treatment is preferably performed after forming the insulating layer 165 in order to prevent oxidation of the conductive layer 164. Preferably.

[0421] In this embodiment, since the resin layer 23 has high heat resistance, the heat treatment for activating impurities can be performed at a high temperature. Thereby, the characteristics of the transistor can be improved.

[0422] Next, an insulating layer 166 is formed on the insulating layer 165 (FIG. 20(D)). The insulating layer 166 can be formed in the same manner as the insulating layer 31, and in particular, an insulating film containing hydrogen is formed. formed.

[0423] Next, a heat treatment is performed. Thereby, hydrogen can be supplied from the insulating layer 166 containing hydrogen into the semiconductor film (particularly into the channel region 162a), and defects in the semiconductor film can be terminated with hydrogen. The heat treatment is preferably performed after forming the insulating layer 166 containing hydrogen. The heat treatment is performed at a temperature lower than the heat treatment performed on the amorphous silicon film 161 to desorb hydrogen. treatment is performed at a temperature lower than the heat treatment performed on the amorphous silicon film 161 to desorb hydrogen. treatment is performed at a temperature lower than the heat treatment performed on the amorphous silicon film 161 to desorb hydrogen.

[0424] In this embodiment, since the resin layer 23 has high heat resistance, the heat treatment for hydrogenation can be performed at a high temperature. Thereby, the characteristics of the transistor can be improved.

[0425] Next, openings reaching the low-resistance region 162b of the semiconductor layer are formed in the insulating layer 165 and the insulating layer 166. formed.

[0426] Subsequently, a conductive layer 167a and a conductive layer 167b are formed. The conductive layer 167a and the conductive layer 16 7b can be formed by forming a conductive film, then forming a resist mask, etching the conductive film, and then removing the resist mask. The conductive layer 167a and the conductive layer 167b They are electrically connected to the low-resistance region 162b through the openings of the insulating layer 165 and the insulating layer 166, respectively. connected.

[0427] In this way, the transistor 140 can be manufactured (Fig. 20(E)). In the transistor 1 40, a part of the conductive layer 164 functions as a gate, and a part of the insulating layer 163 functions as a gate insulating layer. The semiconductor layer has a channel region 162a and a low-resistance region 162b. The channel region 162a overlaps with the conductive layer 164 through the insulating layer 163. The low-resistance region 1 62b has a portion connected to the conductive layer 167a and a portion connected to the conductive layer 167b. having.

[0428] Next, the insulating layer 34 to the protective layer 75 are formed on the insulating layer 166 (Fig. 21(A)). These steps can refer to Embodiment 1. These steps can refer to Embodiment 1.

[0429] Next, a separation starting point is formed in the resin layer 23 (Figs. 21(B1), (B2)). The method of forming the separation starting point can refer to Embodiment 1. The method of forming the separation starting point can refer to Embodiment 1.

[0430] When forming a plurality of display devices on a single manufacturing substrate (multi-sided processing), a plurality of display devices can be formed using one resin layer 23. For example, a plurality of display devices are arranged inside the cut 64 in Fig. 21(B2). As a result, a plurality of display devices can be separated from the manufacturing substrate all at once. separated from the manufacturing substrate all at once. separated from the manufacturing substrate all at once.

[0431] Alternatively, a plurality of resin layers 23 can be used to separately form resin layers 23 for each display device. Fig. 21(B3) shows an example of forming four resin layers 23 on the manufacturing substrate. By making cuts 64 in a frame shape in each of the four resin layers 23, each display device can be manufactured at different timings. It can be separated from the manufacturing substrate.

[0432] In this embodiment, on the metal oxide layer 20, a portion where the resin layer 23 is in contact and a portion where the insulating layer 31 is in contact are provided. The adhesion (adhesiveness) between the metal oxide layer 20 and the insulating layer 31 is higher than the adhesion (adhesiveness) between the metal oxide layer 20 and the resin layer 23. Therefore, it is possible to prevent the resin layer 23 from being unintentionally peeled off from the metal oxide layer 20. And by forming a starting point for separation, the metal oxide layer 20 and the resin layer 23 can be separated at a desired timing. Therefore, the timing of separation can be controlled, and the force required for separation is small. As a result, the yield of the separation process and the manufacturing process of the display device can be increased. And by using a highly heat-resistant material and forming the resin layer as a thick film, a display device to which LTPS is applied to the transistor can be manufactured. Next, the metal oxide layer 20 and the resin layer 23 are separated (Fig. 22(A)). And then, a substrate 29 is bonded to the exposed resin layer 23 using an adhesive layer 28 (Fig. 22(B)). The substrate 29 can function as a support substrate for the display device. It is preferable to use a film for the substrate 29, and particularly preferable to use a resin film. Thereby, the display device can be made lighter and thinner. Also, a display device using a film substrate is less likely to be damaged compared to the case of using glass or metal. In addition, the flexibility of the display device can be enhanced. As described above, by using a material with high heat resistance and forming the resin layer as a thick film, a display device to which LTPS is applied to the transistor can be manufactured.

[0433] Next, the metal oxide layer 20 and the resin layer 23 are separated (Fig. 22(A)).

[0434] Then, a substrate 29 is bonded to the exposed resin layer 23 using an adhesive layer 28 (Fig. 22(B)). (B).

[0435] The substrate 29 can function as a support substrate for the display device. It is preferable to use a film for the substrate 29, and particularly preferable to use a resin film. This enables the display device to be made lighter and thinner. Also, a display device using a film substrate is less likely to be damaged compared to the case of using glass or metal. In addition, the flexibility of the display device can be enhanced. As described above, by using a material with high heat resistance and forming the resin layer as a thick film, a display device to which LTPS is applied to the transistor can be manufactured. As described above, by using a material with high heat resistance and forming the resin layer as a thick film, a display device to which LTPS is applied to the transistor can be manufactured. As described above, by using a material with high heat resistance and forming the resin layer as a thick film, a display device to which LTPS is applied to the transistor can be manufactured. As described above, by using a material with high heat resistance and forming the resin layer as a thick film, a display device to which LTPS is applied to the transistor can be manufactured.

[0436] As described above, by using a material with high heat resistance and forming the resin layer as a thick film, a display device to which LTPS is applied to the transistor can be manufactured. As described above, by using a material with high heat resistance and forming the resin layer as a thick film, a display device to which LTPS is applied to the transistor can be manufactured.

[0437] [Configuration Example 3 of the Display Device] FIG. 23(A) is a top view of the display device 10C. FIGS. 23(B) and (C) are, respectively, an example of a cross-sectional view of the display unit 381 of the display device 10C and a cross-sectional view of the connection portion with the FPC 372. are.

[0438] The display device 10C can be held in a bent state or bent repeatedly. are.

[0439] The display device 10C has a protective layer 75 and a substrate 29. The protective layer 75 side is the display surface side of the display device. The display device 10C has a display unit 381 and a drive circuit unit 382. The display device 1 0C has an FPC 372 attached thereto.

[0440] The conductive layer 43c and the FPC 372 are electrically connected via the connector 76 (FIG. 23 (B), (C)). The conductive layer 43c can be formed of the same material and in the same process as the source and drain of the transistor.

[0441] The display device shown in FIG. 23(C) does not have the resin layer 23 and the insulating layer 31, but has a laminated structure of a resin layer 23a, an insulating layer 31a, a resin layer 23b, and an insulating layer 31b. By having such a laminated structure the reliability of the display device can be improved. is.

[0442] This embodiment can be appropriately combined with other embodiments.

[0443] (Embodiment 3) In this embodiment, a display device and an input / output device that can be manufactured by applying one aspect of the present invention will be described with reference to FIGS. 24 to 33.

[0444] The display device according to this embodiment includes a first display element that reflects visible light and a second display element that emits visible light.

[0445] The display device according to this embodiment has a function of displaying an image by either one or both of the light reflected by the first display element and the light emitted by the second display element.

[0446] As the first display element, an element that reflects external light for display can be used. Since such an element does not have a light source (does not use an artificial light source), the power consumption during display can be made extremely small.

[0447] Typically, a reflective liquid crystal element can be used as the first display element. Alternatively, as the first display element, in addition to a shutter-type MEMS (Micro Electro Mechanical System) element and a MEMS element using an optical interference method, elements applied with a microcapsule method, an electrophoresis method, an electro-wetting method, an electronic ink (registered trademark) method, etc. can be used.

[0448] It is preferable to use a light-emitting element as the second display element. Since the light emitted by such a display element is not affected by external light in terms of its luminance and chromaticity, high color reproducibility (wide color gamut) and vivid display with high contrast can be achieved.

[0449] For the second display element, for example, self-luminous light-emitting elements such as OLED (Organic Light Emitting Diode), LED (Light Emitting Diode), QLED (Q uantum-dot Light Emitting Diode) can be used. ​

[0450] The display device according to this embodiment has a first mode in which an image is displayed using only the first display element, a second mode in which an image is displayed using only the second display element, and a third mode in which an image is displayed using the first display element and the second display element, and these modes can be switched automatically or manually for use.

[0451] In the first mode, an image is displayed using the first display element and external light. Since the first mode does not require a light source, it is a mode with extremely low power consumption. For example, when sufficient external light is incident on the display device (such as in a bright environment), display can be performed using the light reflected by the first display element. For example, it is effective when the external light is sufficiently strong and the external light is white light or light in its vicinity. The first mode is a mode suitable for displaying characters. Also, since the first mode uses the light reflected by the external light, it can perform eye-friendly display, and has the effect of making the eyes less fatigued.

[0452] In the second mode, an image is displayed using the light emission by the second display element. Therefore, regardless of the illuminance or the chromaticity of the external light, extremely vivid (high contrast and high color reproducibility) display can be performed. For example, it is effective when the illuminance is extremely low, such as at night or in a dark indoor environment. Also, when the surroundings are dark, there may be a case where the user feels dazzled when performing bright display. To prevent this, it is preferable to perform display with suppressed luminance in the second mode. By this, in addition to suppressing glare, power consumption can also be reduced. The second mode is a mode suitable for displaying vivid images (still images and moving images).

[0453] In the third mode, both the reflected light from the first display element and the light emission from the second display element are used for display. It is possible to achieve a display that is clearer than the first mode and consumes less power than the second mode. For example, it is effective when the illuminance is relatively low, such as under indoor lighting, in the early morning or evening hours, or when the chromaticity of the external light is not white.

[0454] With such a configuration, a display device with high visibility and high convenience can be realized regardless of the ambient brightness. Specifically, a display device with high visibility and high convenience can be realized both outdoors and indoors.

[0455] Note that the third mode can be said to be a mode using a hybrid display method.

[0456] Also, the display device and the input / output device of the present embodiment can also be referred to as a hybrid display.

[0457] Hybrid display is a method of displaying characters and / or images by combining reflected light and self-emission and complementing each other in terms of color tone or light intensity on one panel. Alternatively, hybrid display is a method of displaying characters and / or images using light from a plurality of display elements in the same pixel or the same sub-pixel. However, when looking locally at a hybrid display performing hybrid display, there may be a pixel or sub-pixel displayed using any one of a plurality of display elements and a pixel or sub-pixel displayed using two or more of a plurality of display elements.

[0458] Note that in this specification and the like, those satisfying any one or more of the above configurations are​​​​​​​​ is called hybrid display.

[0459] A hybrid display also has a plurality of display elements in the same pixel or the same sub-pixel. Examples of the plurality of display elements include a reflective element that reflects light and a self-luminous element that emits light. Note that the reflective element and the self-luminous element can be controlled independently. The hybrid display has a function of displaying characters and / or images using either or both of the reflected light and the self-luminous light in the display unit. The display device of the present embodiment has a plurality of first pixels each having a first display element and a plurality of second pixels each having a second display element. The first pixel and the second pixel are preferably arranged in a matrix shape.

[0460] The first pixel and the second pixel may each have a configuration having one or more sub-pixels. For example, a pixel may have a configuration having one sub-pixel (such as white (W)), a configuration having three sub-pixels (three colors of red (R), green (G), and blue (B), or three colors of yellow (Y), cyan (C), and magenta (M), etc.), or a configuration having four sub-pixels (four colors of red (R), green (G), blue (B), white (W), or four colors of red (R), green (G), blue (B), yellow (Y), etc.). The display device of the present embodiment can be configured to perform full-color display with either the first pixel or the second pixel. Alternatively, the display device of the present embodiment can be configured to perform black-and-white display or grayscale display with the first pixel and full-color display with the second pixel. The first pixel and the second pixel may each have a configuration having one or more sub-pixels. For example, a pixel may have a configuration having one sub-pixel (such as white (W)), a configuration having three sub-pixels (three colors of red (R), green (G), and blue (B), or three colors of yellow (Y), cyan (C), and magenta (M), etc.), or a configuration having four sub-pixels (four colors of red (R), green (G), blue (B), white (W), or four colors of red (R), green (G), blue (B), yellow (Y), etc.).

[0461] The first pixel and the second pixel may each have a configuration having one or more sub-pixels. For example, a pixel may have a configuration having one sub-pixel (such as white (W)), a configuration having three sub-pixels (three colors of red (R), green (G), and blue (B), or three colors of yellow (Y), cyan (C), and magenta (M), etc.), or a configuration having four sub-pixels (four colors of red (R), green (G), blue (B), white (W), or four colors of red (R), green (G), blue (B), yellow (Y), etc.). For example, a pixel may have a configuration having one sub-pixel (such as white (W)), a configuration having three sub-pixels (three colors of red (R), green (G), and blue (B), or three colors of yellow (Y), cyan (C), and magenta (M), etc.), or a configuration having four sub-pixels (four colors of red (R), green (G), blue (B), white (W), or four colors of red (R), green (G), blue (B), yellow (Y), etc.). The display device of the present embodiment can be configured to perform full-color display with either the first pixel or the second pixel. Alternatively, the display device of the present embodiment can be configured to perform black-and-white display or grayscale display with the first pixel and full-color display with the second pixel. The display device of the present embodiment can be configured to perform full-color display with either the first pixel or the second pixel. Alternatively, the display device of the present embodiment can be configured to perform black-and-white display or grayscale display with the first pixel and full-color display with the second pixel. The display device of the present embodiment can be configured to perform full-color display with either the first pixel or the second pixel. Alternatively, the display device of the present embodiment can be configured to perform black-and-white display or grayscale display with the first pixel and full-color display with the second pixel. The display device of the present embodiment can be configured to perform full-color display with either the first pixel or the second pixel. Alternatively, the display device of the present embodiment can be configured to perform black-and-white display or grayscale display with the first pixel and full-color display with the second pixel.

[0462] The display device of the present embodiment can be configured to perform full-color display with either the first pixel or the second pixel. Alternatively, the display device of the present embodiment can be configured to perform black-and-white display or grayscale display with the first pixel and full-color display with the second pixel. The display device of the present embodiment can be configured to perform full-color display with either the first pixel or the second pixel. Alternatively, the display device of the present embodiment can be configured to perform black-and-white display or grayscale display with the first pixel and full-color display with the second pixel. The display device of the present embodiment can be configured to perform full-color display with either the first pixel or the second pixel. Alternatively, the display device of the present embodiment can be configured to perform black-and-white display or grayscale display with the first pixel and full-color display with the second pixel. It is possible. The black-and-white display or grayscale display using the first pixel is suitable for displaying information that does not require color display, such as document information. Information that does not require color display, such as document information, is suitable for display.

[0463] FIG. 24 is a schematic perspective view of the display device 300A. The display device 300A has a configuration in which a substrate 351 and a substrate 361 are bonded together. In FIG. 24, the substrate 361 is shown by a broken line. In FIG. 24, the substrate 361 is clearly shown by a broken line. Yes.

[0464] The display device 300A includes a display unit 362, a circuit 364, a wiring 365, etc. FIG. 24 shows an example in which an IC (integrated circuit) 373 and an FPC 372 are mounted on the display device 300A. Therefore, the configuration shown in FIG. 24 can also be referred to as a display module having the display device 300A, the IC, and the FPC. In FIG. 24, an example in which an IC (integrated circuit) 373 and an FPC 372 are mounted on the display device 300A is shown. Therefore, the configuration shown in FIG. 24 can also be called a display module having the display device 300A, the IC, and the FPC. Yes.

[0465] As the circuit 364, for example, a scanning line driving circuit can be used.

[0466] The wiring 365 has a function of supplying signals and power to the display unit 362 and the circuit 364. The signals and power are input to the wiring 365 from the outside via the FPC 372 or from the IC 373. The signals and power are input to the wiring 365 from the outside via the FPC 372 or from the IC 373. Input.

[0467] In FIG. 24, an example in which the IC 373 is provided on the substrate 351 by a COG (Chip On Glass) method or a COF (Chip on Film) method, etc. is shown. The IC 373 can be an IC having, for example, a scanning line driving circuit or a signal line driving circuit. In addition, the display device 300A and the display module may have a configuration without providing an IC. Also, the IC may be mounted on the FPC by a COF method or the like. Film) method, etc., an example in which the IC 373 is provided on the substrate 351 is shown. The IC 3 73 can be an IC having, for example, a scanning line driving circuit or a signal line driving circuit. In addition, the display device 300A and the display module may have a configuration without providing an IC. Also, the IC may be mounted on the FPC by a COF method or the like. In addition, the display device 300A and the display module may have a configuration without providing an IC. Also, the IC may be mounted on the FPC by a COF method or the like. The IC may be mounted on the FPC by a COF method or the like.

[0468] FIG. 24 shows an enlarged view of a part of the display unit 362. The display unit 362 has a plurality of displays. The electrodes 311b of the element are arranged in a matrix. It has a reflective function and functions as a reflective electrode for the liquid crystal element 180 .

[0469] 24, the electrode 311b has an opening 451. The light emitting element 170 is disposed closer to the substrate 351 than the electrode 311b. The light is emitted to the substrate 361 side through the opening 451 of the electrode 311b. The area of ​​the light emitting region and the area of ​​the opening 451 may be equal. If one of the product and the area of ​​the opening 451 is larger than the other, the margin for misalignment is large. In particular, the area of ​​the opening 451 is preferably larger than the area of ​​the light emitting region of the light emitting element 170. If the opening 451 is small, some of the light from the light emitting element 170 may be reflected by the opening 451. The electrode 311b may block the light and prevent it from reaching the outside. By reducing the light emission, it is possible to prevent the light emitted by the light emitting element 170 from being wasted.

[0470] FIG. 25 shows a part of the area including the FPC 372 and the circuit 3 of the display device 300A shown in FIG. 64 and a part of the area including the display unit 362 are cut away. An example of a surface is shown below.

[0471] The display device 300A shown in FIG. 25 includes a transistor 201 between a substrate 351 and a substrate 361. , transistor 203, transistor 205, transistor 206, liquid crystal element 180, The optical element 170, the insulating layer 220, the colored layer 131, the colored layer 134, etc. are included. The insulating layer 220 is adhered via the adhesive layer 141. The substrate 351 and the insulating layer 220 are adhered via the adhesive layer 142.

[0472] On the substrate 361, a colored layer 131, a light-shielding layer 132, an insulating layer 121, and a common electrode 113 that functions as an electrode of the liquid crystal element 180, an alignment film 133b, an insulating layer 117, etc. are provided. On the outer surface of the substrate 361, there is a polarizing plate 135. The insulating layer 121 may have a function as a planarization layer. With the insulating layer 121, the surface of the electrode 113 can be made substantially flat, so that the alignment state of the liquid crystal layer 112 can be made uniform. The insulating layer 117 functions as a spacer for holding the cell gap of the liquid crystal element 180. When the insulating layer 117 transmits visible light, the insulating layer 117 may be arranged to overlap with the display area of the liquid crystal element 180.

[0473] The liquid crystal element 180 is a reflective liquid crystal element. The liquid crystal element 180 has a laminated structure in which an electrode 311a that functions as a pixel electrode, a liquid crystal layer 112, and an electrode 113 are laminated. In contact with the substrate 351 side of the electrode 311a, an electrode 311b that reflects visible light is provided. The electrode 311 b has an opening 451. The electrode 311a and the electrode 113 transmit visible light. An alignment film 133a is provided between the liquid crystal layer 11 2 and the electrode 311a. An alignment film 133b is provided between the liquid crystal layer 112 and the electrode 113.

[0474] In the liquid crystal element 180, the electrode 311b has a function of reflecting visible light, and the electrode 113 has a function of transmitting visible light. The light incident from the substrate 361 side is polarized by the polarizing plate 135, passes through the electrode 113 and the liquid crystal layer 112, and is reflected by the electrode 311b. Then the liquid crystal layer 11 It passes through the electrode 113 and the electrode 2 again and reaches the polarizing plate 135. At this time, the alignment of the liquid crystal can be controlled by the voltage applied between the electrode 311b and the electrode 113, and the optical modulation of light can be controlled. That is, the intensity of the light emitted through the polarizing plate 135 can be controlled. Also, light is absorbed by the coloring layer 131 except for light in a specific wavelength region, so that the light taken out becomes light exhibiting, for example, red color. As shown in FIG. 25, it is preferable that the opening 451 is provided with an electrode 311a that transmits visible light. Thereby, the liquid crystal layer 112 is aligned in the region overlapping the opening 451 in the same manner as in other regions, so that the alignment defect of the liquid crystal at the boundary of these regions can be suppressed, and the leakage of unintended light can be suppressed. In the connection portion 207, the electrode 311b is electrically connected to the conductive layer 222a of the transistor 206 via the conductive layer 221b. The transistor 206 has a function of controlling the driving of the liquid crystal element 180. In a part of the region where the adhesive layer 141 is provided, a connection portion 252 is provided. In the connection portion 252, a conductive layer obtained by processing the same conductive film as the electrode 311a and a part of the electrode 113 are electrically connected by a connection body 243. Therefore, a signal or a potential input from the FPC 372 connected to the substrate 351 side can be supplied to the electrode 113 formed on the substrate 361 side via the connection portion 252.

[0475] As a connection body 243, for example, conductive particles can be used. As the conductive particles,

[0476]

[0477]

[0478]

[0478] It is possible to use particles whose surfaces are coated with a metal material such as an organic resin or silica. It is preferable to use nickel or gold as the metal material because the contact resistance can be reduced. Also, it is preferable to use particles coated with two or more types of metal materials in layers, such as coating nickel with gold. Also, as the connector 243, it is preferable to use a material that elastically deforms or plastically deforms. At this time, the connector 243, which is a conductive particle, may have a shape flattened in the vertical direction as shown in FIG. 25. By doing so, the contact area between the connector 243 and the conductive layer that is electrically connected to it increases, the contact resistance can be reduced, and it is possible to suppress the occurrence of problems such as poor connection. When nickel or gold is used as the metal material, it is preferable because the contact resistance can be reduced. Also, it is preferable to use particles coated with two or more types of metal materials in layers, such as coating nickel with gold. Also, as the connector 243, it is preferable to use a material that elastically deforms or plastically deforms. At this time, the connector 243, which is a conductive particle, may have a shape flattened in the vertical direction as shown in FIG. 25. By doing so, the contact area between the connector 243 and the conductive layer that is electrically connected to it increases, the contact resistance can be reduced, and it is possible to suppress the occurrence of problems such as poor connection. In addition, it is possible to suppress the occurrence of defects such as poor connection.

[0479] The connector 243 is preferably arranged so as to be covered by the adhesive layer 141. For example, the connector 243 may be dispersed in the adhesive layer 141 before curing.

[0480] The light-emitting element 170 is a bottom-emission type light-emitting element. The light-emitting element 170 has a laminated structure in which an electrode 191 that functions as a pixel electrode, an EL layer 192, and an electrode 193 that functions as a common electrode are laminated in this order from the insulating layer 220 side. The electrode 191 is connected to the conductive layer 222a of the transistor 205 through an opening provided in the insulating layer 214. The transistor 205 has a function of controlling the driving of the light-emitting element 170. The insulating layer 216 covers the end of the electrode 191. The electrode 193 contains a material that reflects visible light, and the electrode 191 contains a material that transmits visible light. An insulating layer 194 is provided covering the electrode 193. The light emitted by the light-emitting element 170 is emitted toward the substrate 361 side through the coloring layer 134, the insulating layer 220, the opening 451, the electrode 311a, etc. The electrode 191 is connected to the conductive layer 222a of the transistor 205 through an opening provided in the insulating layer 214. The transistor 205 has a function of controlling the driving of the light-emitting element 170. The insulating layer 216 covers the end of the electrode 191. The electrode 193 contains a material that reflects visible light, and the electrode 191 contains a material that transmits visible light. An insulating layer 194 is provided covering the electrode 193. The light emitted by the light-emitting element 170 is emitted toward the substrate 361 side through the coloring layer 134, the insulating layer 220, the opening 451, the electrode 311a, etc. The electrode 193 contains a material that reflects visible light, and the electrode 191 contains a material that transmits visible light. An insulating layer 194 is provided covering the electrode 193. The light emitted by the light-emitting element 170 is emitted toward the substrate 361 side through the coloring layer 134, the insulating layer 220, the opening 451, the electrode 311a, etc. The light emitted by the light-emitting element 170 is emitted toward the substrate 361 side through the coloring layer 134, the insulating layer 220, the opening 451, the electrode 311a, etc.

[0481] The liquid crystal element 180 and the light-emitting element 170 can exhibit various colors by changing the color of the coloring layer for each pixel. The display device 300A can perform color display using the liquid crystal element 180. The display device 300A can also perform color display using the light-emitting element 170.

[0482] The transistors 201, 203, 205, and 20 6 are all formed on the surface of the insulating layer 220 on the substrate 351 side. These transistors can be manufactured using the same process.

[0483] The circuit electrically connected to the liquid crystal element 180 is preferably formed on the same surface as the circuit electrically connected to the light-emitting element 170. This can reduce the thickness of the display device compared to the case where the two circuits are formed on separate surfaces. Also, since the two transistors can be manufactured in the same process, the manufacturing process can be simplified compared

[0484] The pixel electrode of the liquid crystal element 180 is located opposite to the pixel electrode of the light-emitting element 170 with the gate insulating layer of the

[0485] transistor in between. Here, when the transistor 20 6 having a metal oxide in the channel formation region and an extremely low off-current is applied, or when a memory element electrically connected to the transistor 206 is However, the display can be maintained. In one aspect of the present invention, the frame rate can be made extremely small , and low-power driving can be performed.

[0486] Transistor 203 is a transistor (also referred to as a switching transistor or a selection transistor) that controls the selected and non-selected states of the pixel. Transistor 205 is a transistor (also referred to as a driving transistor) that controls the current flowing through the light-emitting element 170.

[0487] On the substrate 351 side of the insulating layer 220, insulating layers such as insulating layer 211, insulating layer 212, insulating layer 213, and insulating layer 214 are provided. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. The insulating layer 212 is provided to cover the transistor 206 and the like. The insulating layer 213 is provided to cover the transistor 205 and the like. The insulating layer 214 has a function as a planarization layer. Note that the number of insulating layers covering the transistor is not limited, and it may be a single layer or two or more layers.

[0488] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering each transistor. Thereby, the insulating layer can function as a barrier film. With such a configuration, it is possible to effectively suppress the diffusion of impurities from the outside to the transistor, and a highly reliable display device can be realized.

[0489] Transistors 201, 203, 205, and transistor 20 6 include a conductive layer 221a that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a conductive layer 222a and a conductive layer 222b that function as a source and a drain, and a semiconductor It has a layer 231. Here, the same conductive film is processed to obtain a plurality of layers, and the same etching pattern is applied.

[0490] Transistors 201 and 205 have a conductive layer 223 that functions as a gate in addition to the configuration of transistors 203 and 206.

[0491] For transistors 201 and 205, a configuration is applied in which a semiconductor layer in which a channel is formed is sandwiched by two gates. By adopting such a configuration, the threshold voltage of the transistor can be controlled. The two gates can be connected and the same signal can be supplied to them to drive the transistor. Such a transistor can increase the field-effect mobility compared with other transistors, and can increase the on-current. As a result, a circuit capable of high-speed driving can be fabricated. Furthermore, the occupied area of the circuit section can be reduced. By applying a transistor with a large on-current, even if the number of wirings increases when the display device is enlarged or has higher definition, the signal delay in each wiring can be reduced, and display unevenness can be suppressed.

[0492] Alternatively, the threshold voltage of the transistor can be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to

[0493] the other. There is no limitation on the structure of the transistors included in the display device. The It is also acceptable. All of the plurality of transistors included in circuit 364 may have the same structure, or two or more types of structures may be used in combination. Similarly, all of the plurality of transistors included in display unit 362 may have the same structure, or two or more types of structures may be used in combination. For the conductive layer 223, it is preferable to use a conductive material containing an oxide. When forming the conductive film constituting the conductive layer 223, by forming the film in an atmosphere containing oxygen, oxygen can be supplied to the insulating layer 212. It is preferable that the ratio of oxygen gas in the film-forming gas is in the range of 90% or more and 100% or less. The oxygen supplied to the insulating layer 212 is supplied to the semiconductor layer 231 by subsequent heat treatment, and the oxygen deficiency in the semiconductor layer 231 can be reduced. Specifically, it is preferable to use a metal oxide with reduced resistance for the conductive layer 223. At this time, it is preferable to use an insulating film that releases hydrogen to the insulating layer 213, such as a silicon nitride film. During the film formation of the insulating layer 213 or by subsequent heat treatment, hydrogen is supplied into the conductive layer 223, and the electrical resistance of the conductive layer 223 can be effectively reduced. An overcoat layer 134 is provided in contact with the insulating layer 213. The overcoat layer 134 is covered with the insulating layer 214.

[0494] In a region where the substrate 351 and the substrate 361 do not overlap, a connection portion 204 is provided. In the connection portion 204, the wiring 365 is electrically connected to the FPC 372 via the connection layer 242. The connection portion 204 has the same configuration as the connection portion 207. The upper surface of the connection portion 204 is electrically

[0495]

[0496]

[0497] ​​​​​​​​​​​​​An electrically conductive layer obtained by processing the same electrically conductive film as the electrode 311a is exposed. As a result, the connection portion 204 and the FPC 372 can be electrically connected via the connection layer 242.

[0498] A linear polarizing plate may be used as the polarizing plate 135 disposed on the outer surface of the substrate 361, but a circularly polarized plate can also be used. As the circularly polarized plate, for example, a laminate of a linear polarizing plate and a quarter-wave retardation plate can be used. Thereby, external light reflection can be suppressed. Also, depending on the type of the polarizing plate, by adjusting the cell gap, alignment, driving voltage, etc. of the liquid crystal element used for the liquid crystal element 180, a desired contrast is realized.

[0499] Note that various optical members can be disposed outside the substrate 361. Examples of the optical member include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Also, outside the substrate 361, an antistatic film for suppressing dust adhesion, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the occurrence of scratches during use, etc. may be disposed.

[0500] For the substrate 351 and the substrate 361, glass, quartz, ceramic, sapphire, organic resin, etc. can be used respectively. If the substrate 351 and the substrate 361 are made of a flexible material, the flexibility of the display device can be enhanced.

[0501] As the liquid crystal element 180, for example, a liquid crystal element to which a vertical alignment (VA: Vertical Alignment t) mode is applied can be used. As the vertical alignment mode, MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, etc. can be used. A(Patterned Vertical Alignment) mode, ASV(A Advanced Super View (AVC) mode can be used.

[0502] The liquid crystal element 180 can be a liquid crystal element to which various modes are applied. For example, In addition to the VA mode, TN (Twisted Nematic) mode and IPS (In- Plane-Switching mode, FFS (Fringe Field Switching) mode tching) mode, ASM(Axially Symmetric aligned) Micro-cell mode, OCB (Optically Compensated) d Birefringence mode, FLC (Ferroelectric Li quid Crystal) mode, AFLC(AntiFerroelectric) mode Liquid Crystal) mode, STN (Super Twisted Nem atic mode, TBA (Transverse Bend Alignment) mode Electrically Controlled Birefring (ECB) A liquid crystal element to which a guest-host mode or a guest-sensing mode is applied can be used.

[0503] A liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of liquid crystals. The optical modulation of liquid crystals is caused by the electric field applied to the liquid crystal (horizontal electric field, vertical electric field or oblique electric field). The liquid crystal used in the liquid crystal element is thermotropic. Low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC) ispersed Liquid Crystal, Polymer Network Liquid Crystal (PN LC (Polymer Network Liquid Crystal), ferroelectric liquid crystals, antiferroelectric liquid crystals, etc. can be used. These liquid crystal materials can exhibit cholesteric phase, smectic phase, cubic phase, chiral nematic phase, isotropic phase, etc. depending on the conditions. .

[0504] As the liquid crystal material, either a positive-type liquid crystal or a negative-type liquid crystal can be used, and an optimal liquid crystal material can be selected according to the applicable mode and design.

[0505] An alignment film can be provided to control the alignment of the liquid crystal. In the case of adopting the horizontal electric field method, a liquid crystal showing a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases and is the phase that appears immediately before the transition from the cholesteric phase to the isotropic phase when the cholesteric liquid crystal is heated. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition mixed with a chiral agent of several weight% or more is used for the liquid crystal to improve the temperature range. The liquid crystal composition containing a liquid crystal showing a blue phase and a chiral agent has a short response time and optical isotropy. In addition, the liquid crystal composition containing a liquid crystal showing a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependence. Also, since there is no need to provide an alignment film, rubbing treatment is not required, so electrostatic breakdown caused by rubbing treatment can be prevented, and defects and breakage of the liquid crystal display device during the manufacturing process can be reduced.

[0506] When using a reflective liquid crystal element, a polarizing plate 135 is provided on the display surface side. Separately, arranging a light diffusing plate on the display surface side is preferable because it can improve visibility.

[0507] A front light may be provided outside the polarizing plate 135. As the front light, it is preferable to use an edge light type front light. It is preferable to use a front light equipped with LEDs because power consumption can be reduced.

[0508] Materials that can be used for light emitting elements, transistors, insulating layers, conductive layers, adhesive layers, connection layers, etc. can be referred to the description of Embodiment 1 respectively.

[0509] <Application Example> In one aspect of the present invention, a display device (hereinafter also referred to as an input / output device or a touch panel) mounted with a touch sensor can be manufactured.

[0510] There is no limitation to the detection element (also referred to as a sensor element) included in the input / output device of one aspect of the present invention. Various sensors that can detect the proximity or contact of a detected object such as a finger or a stylus can be applied as the detection element.

[0511] For example, as the sensor method, various methods such as a capacitance method, a resistive film method, a surface acoustic wave method, an infrared method , an optical method, and a pressure sensitive method can be used.

[0512] In this embodiment, an input / output device having a capacitance type detection element will be described as an example.

[0513] As the capacitance method, there are a surface capacitance method, a projected capacitance method, etc. Further, as the projected capacitance method, there are a self-capacitance method, a mutual-capacitance method, etc. It is preferable to use the mutual-capacitance method because simultaneous multi-point detection becomes possible.

[0514] An input / output device of one aspect of the present invention bonds a separately manufactured display device and a detection element. A configuration in which electrodes and the like constituting a detection element are provided on one or both of a pair of substrates included in a display panel, and various configurations can be applied. A configuration in which electrodes and the like constituting a detection element are provided on one or both of a pair of substrates included in a display panel, and various configurations can be applied.

[0515] Hereinafter, an input / output device having a configuration in which a separately manufactured display device and a detection element are bonded together will be described. FIGS. 26 and 30 show flowcharts of a method for manufacturing a display device according to an aspect of the present invention. FIGS. 27 and 28(A), (B) show cross-sectional views of the display device during manufacturing. FIG. 27 corresponds to step S6 shown in FIG. 26. Similarly, FIG. 28(A) corresponds to step S7, and FIG. 28( B) corresponds to step S8. FIGS. 31 and 32 also show cross-sectional views of the display device during manufacturing. FIG. 31 corresponds to step S26 shown in FIG. 30. Similarly, FIG. 32 corresponds to step S27.

[0516] As shown in FIG. 26, first, a metal layer 19 is formed on a manufacturing substrate 14 (step S1). Then, the metal layer 19 is oxidized to form a metal oxide layer 20 (step S2). Here, the metal layer 19 is oxidized by performing H2O plasma treatment to form the metal oxide layer 20. For the method of forming the metal oxide layer 20, reference can be made to Embodiment 1. For the method of forming the metal oxide layer 20, reference can be made to Embodiment 1.

[0517] Next, a first layer 24 is formed on the metal oxide layer 20 (step S3). Then, the first layer 24 is cured to form a resin layer 23 (step S4). Here, the resin layer 23 is formed by applying and baking the first layer 24. For the method of forming the resin layer 23, reference can be made to Embodiment 1. For the method of forming the resin layer 23, reference can be made to Embodiment 1.

[0518] Next, transistors and the like are formed on the resin layer 23 (step S5). Then, the trans Form and encapsulate a light-emitting element that is electrically connected to the stud (step S6). On the resin layer 23 Each configuration formed thereon will be described with reference to FIG. 27. For configurations already described the previous description can be referred to.

[0519] As shown in FIG. 27, a metal oxide layer 20 is formed on the fabrication substrate 14, and a resin layer 2 0 is formed on the metal oxide layer 20. An insulating layer 115 is formed on the resin layer 23 . The insulating layer 115 preferably has high barrier properties. The insulating layer 115 is preferably a silicon nitride film . On the insulating layer 115, electrodes 311a, 311b, and 311c are stacked in this order. The end of electrode 311a and the end of electrode 311c are located outside the end of electrode 311b and are in contact with each other. For electrodes 311a and 311c, a conductive film that transmits visible light is used. For electrode 311b, a conductive film that reflects visible light is used. An opening 451 is provided in electrode 311b . The opening 451 overlaps with the light-emitting region of the light-emitting element 170 . An insulating layer 220a is provided on electrode 311c, and a conductive layer 224 is provided on the insulating layer 220a , and an insulating layer 220b is provided on the conductive layer 224 . The conductive layer 224 functions as one electrode of the capacitive element. On the insulating layer 220b, transistors 203, 205, and 206 are provided . The source or drain of transistor 206 is electrically connected to electrode 311c at the connection portion 207 . Transistor 205 has two gates. The two gates are electrically connected. The source or drain of transistor 205 is electrically connected to electrode 191 of the light-emitting element 170 via conductive layer 22 8. Each transistor is insulated ​ It is covered with an edge layer 212, an insulating layer 213, an insulating layer 214, an insulating layer 225, and an insulating layer 215. It is preferable that one or more of these insulating layers have high barrier properties. FIG. 27 shows an example in which materials with high barrier properties are used for the insulating layer 213 and the insulating layer 225. The insulating layer 21 3 is provided to cover the ends of the insulating layer 220a, the insulating layer 220b, the insulating layer 212, etc. The insu lating layer 225 is provided to cover the end of the insulating layer 214. The coating film 226 is a film that reflects visible light. The coating film 226 has a function of reflecting a part of the light emitted by the light emitting element 170 and supplying it to the opening 451 side. The lens 227 has a function of transmitting the light emitted by the light emitting element 170. The lens 227 overlaps with the light emitting region of the light emitting element 170. The light emitting element 170 has electrodes 19 1, an EL layer 192, and an electrode 193. The EL layer 192 is painted for each sub-pixel. The end of the electrode 191 is covered with an insulating layer 216. The insulating layer 217 functions as a spacer. The light emitting element 170 and the substrate 351 are bonded together by an adhesive layer 142.

[0520] As the material of one or both of the insulating layer 214 and the insulating layer 215, a material having a refractive index of 1.55 or in the vicinity thereof, a material having a refractive index of 1.66 or in the vicinity thereof, an acrylic resin, a polyimide resin, etc. can be used.

[0521] As the material of the coating film 226, a metal can be used. Specifically, a material containing silver, a material containing silver and palladium, a material containing silver and copper, etc. can be used to form the coating film 226.

[0522] The refractive index of the lens 227 is preferably 1.3 or more and 2.5 or less. The lens 227 , it can be formed using one or both of inorganic materials and organic materials.

[0523] Examples of the material of the lens 227 include materials containing oxides or sulfides, and materials containing resins. Specific examples of the material containing oxides or sulfides include cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, oxides containing indium, gallium, and zinc, zinc sulfide, and the like. Specific examples of the material containing resins include resins into which chlorine, bromine, or iodine has been introduced, resins into which heavy metal atoms have been introduced, resins into which aromatic rings have been introduced, resins into which sulfur has been introduced, and the like. Alternatively, a material containing a resin and nanoparticles of a material having a higher refractive index than the resin can be used for the lens 227. Titanium oxide or zirconium oxide can be used for the nanoparticles.

[0524] Next, the transistor or the like is peeled off from the production substrate 14 and transferred to the substrate 351 side (step S 7). Separation occurs at the interface between the metal oxide layer 20 and the resin layer 23, so that the resin layer 23 is exposed (FIG. 28(A)).

[0525] Next, by removing the resin layer 23, the insulating layer 115 is exposed (step S8). Note that part or all of the insulating layer 115 may be removed to expose the electrode 311a. By leaving the insulating layer 115 having high barrier properties, it is possible to suppress moisture from entering the transistor or the light-emitting element 170, and the reliability of the display device can be improved. Here, the resin layer 23 is removed by ashing (FIG. 28(B)).

[0526] ​​​​​​​​​​Then, a liquid crystal element 180 is formed (step S9). An alignment film 133a is formed on the insulating layer 115 (or on the electrode 31 1a). Also, on one surface of the substrate 361, a colored layer 131, an insulating layer 121, an insulating layer 232, an electrode 113, an insulating layer 117, and an alignment film 133b are sequentially formed. In FIG. 29, an example is shown where the colored layer 131 does not overlap with the light-emitting region of the light-emitting element 170. However, the colored layer 131 may be provided so as to overlap with the light-emitting region of the light-emitting element 170. The insulating layer 121 functions as an overcoat. For the insulating layer 232, an insulating film with high barrier properties is preferable. The electrode 113 functions as a common electrode of the liquid crystal element 180. The insulating layer 117 functions as a spacer for holding the cell gap of the liquid crystal element 180. The insulating layer 117 is transmissive to visible light.

[0527] The liquid crystal element 180 is formed by bonding the substrate 351 and the substrate 361 so that a liquid crystal layer 112 is sandwiched between the alignment film 133a and the alignment film 133b. The liquid crystal element 180 has an electrode 311a, an electrode 311b, an electrode 311c, a liquid crystal layer 112, and an electrode 113.

[0528] Furthermore, a diffusion film 233 and a polarizing plate 135 are bonded to the other surface of the substrate 361. Then, a substrate 235 having a touch sensor provided on one surface is bonded to the polarizing plate 135. Note that in FIG. 29, there are some places where the illustration of the adhesive layer is omitted. It is preferable that the other surface of the substrate 235 is subjected to an antireflection process. For example, it is preferable that an antiglare treatment is performed. By the unevenness of the surface, the reflected light can be diffused and the reflection can be reduced. An insulating layer 234c is provided between the conductive layer 234a and the conductive layer 234b of the touch sensor. is provided. The conductive layer 234b is covered with the insulating layer 234d.

[0529] As described above, the input / output device 310A shown in FIG. 29 can be formed. Then, an FPC , an IC, etc. are mounted (step S10), and display confirmation can be performed (step S11 ).

[0530] The flow shown in FIG. 26 includes a step of removing the resin layer 23 peeled from the production substrate 14. On the other hand, FIG. 30 shows a flow in the case where this step is not included.

[0531] As shown in FIG. 30, first, a metal layer 19 is formed on the production substrate 14 (step S21) . Then, the metal layer 19 is oxidized to form a metal oxide layer 20 (step S22). Here, by performing H2O plasma treatment, the metal layer 19 is oxidized to form the metal oxide layer 20 . For the method of forming the metal oxide layer 20, reference can be made to Embodiment 1.

[0532] Next, a first layer 24 is formed on the metal oxide layer 20 (step S23). Then, the first layer 24 is cured to form a resin layer 23 (step S24). Here, by applying and baking the first layer 24, the resin layer 23 is formed. For the method of forming the resin layer 23, reference can be made to Embodiment 1. Here, a resin layer 23 having an opening is formed . For example, by opening the resin layer 23 at a portion where the conductive layer is to be exposed, the conductive layer can be exposed without removing the resin layer 23 after peeling. In addition, when the transmittance of the resin layer 23 to visible light is low, by opening the resin layer 23 at a portion where light is to be extracted, a decrease in light extraction efficiency can be suppressed without removing the resin layer 23 after peeling.

[0533] Next, transistors and the like are formed on the metal oxide layer 20 and on the resin layer 23 (step S 25). Then, a light-emitting element electrically connected to the transistor is formed and encapsulated (step S26). Each configuration will be described with reference to FIG. 31. For configurations already described, refer to the previous description.

[0534] As shown in FIG. 31, a metal oxide layer 20 is formed on a production substrate 14, and a resin layer 2 3 is formed on the metal oxide layer 20. An opening is provided in the resin layer 23. In a portion where the resin layer 23 is not provided, there are regions where the metal oxide layer 20 is in contact with the electrode 311a and regions where the metal oxide layer 20 is in contact with the insulating layer 213. On the metal oxide layer 20 and on the resin layer 23, the electrode 311a, the electrode 311b, and the electrode 311c are laminated in this order. The end of the electrode 311a and the end of the electrode 311c are located outside the end of the electrode 311b and are in contact with each other. For the electrode 311a and the electrode 311c, a conductive film that transmits visible light is used. For the electrode 311b, a conductive film that reflects visible light is used. In a portion that does not overlap with these electrodes, a light-emitting region of the light-emitting element 170 is provided. An insulating layer 220a is provided on the electrode 311c, a conductive layer 224 is provided on the insulating layer 220a, and an insulating layer 220b is provided on the conductive layer 224. The conductive layer 224 functions as one electrode of a capacitive element. On the insulating layer 220b, the transistor 203, the transistor 205, and the transistor 206 are provided. The 05 has two gates. The two gates are electrically connected. The source or drain of the transistor 205 is electrically connected to the electrode 191 of the light-emitting element 170 via the conductive layer 228. Each transistor is covered with an insulating layer 212, an insulating layer 213, an insulating layer 21 4, an insulating layer 225, and an insulating layer 215. It is preferable that one or more of these insulating layers have high barrier properties. In FIG. 31, an example of using a material with high barrier properties for the insulating layer 213 and the insulating layer 225 is shown. The insulating layer 213 is provided to cover the ends of the insulating layer 220a, the insulating layer 220b, , the insulating layer 212, etc. The insulating layer 225 is provided to cover the end of the insulating layer 214. The coating film 226 is a film that reflects visible light. The coating film 226 has a function of reflecting a part of the light emitted by the light-emitting element 170 and supplying it to the lower side of the drawing. The lens 227 has a function of transmitting the light emitted by the light-emitting element 170. The lens 227 overlaps the light-emitting region of the light-emitting element 170. The light-emitting element 170 has an electrode 191, an EL layer 192, and an electrode 193. The EL layer 192 is painted separately for each sub-pixel. The end of the electrode 191 is covered with the insulating layer 21 6. The insulating layer 217 has a function as a spacer. The light-emitting element 170 and the substrate 351 are bonded together by the adhesive layer 142. Next, the transistor etc. are peeled off from the production substrate 14 and transferred to the substrate 351 side (step S 27). Separation occurs at the interface between the metal oxide layer 20 and the resin layer 23, so that the resin layer 23 is exposed (FIG. 32). Also, at the portion where the resin layer 23 is not provided, separation occurs at the interface between the metal oxide layer 20 and the electrode 311a, so that the electrode 311a is exposed (FIG. 32). Note that

[0535] , it is preferable to use a material with low adhesion to the metal oxide layer 20. Also, the smaller the contact area between the electrode 311a and the metal oxide layer 20, the easier it is for separation to occur at the interface, which is preferable.

[0536] Then, a liquid crystal element 180 is formed (step S28). An alignment film 133a is formed on the resin layer 23 and on the electrode 311a. Also, on one surface of the substrate 361, a coloring layer 131, an insulating layer 121, an insulating layer 232, an electrode 113, an insulating layer 117, and an alignment film 133b are formed in sequence. Since these configurations are the same as those in FIG. 29, the description is omitted.

[0537] The liquid crystal element 180 is formed by bonding the substrate 351 and the substrate 361 so that the liquid crystal layer 112 is sandwiched between the alignment film 133a and the alignment film 133b. The liquid crystal element 180 includes the electrodes 311a, 311b, 311c, the liquid crystal layer 112, and the electrode 113.

[0538] Furthermore, a diffusion film 233 and a polarizing plate 135 are bonded to the other surface of the substrate 361. Then, a substrate 235 provided with a touch sensor on one surface is bonded to the polarizing plate 135. Since these configurations are the same as those in FIG. 29, the description is omitted.

[0539] Thus, the input / output device 310B shown in FIG. 33 can be formed. After that, an FPC, an IC, etc. are mounted (step S29), and display confirmation can be performed (step S30).

[0540] As described above, the display device according to the present embodiment has two types of display elements and can be switched between a plurality of display modes for use. Therefore, regardless of the ambient brightness, the visibility is high and the convenience is high.

[0541] This embodiment can be appropriately combined with other embodiments.

[0542] (Embodiment 4) In this embodiment, the metal oxides that can be used for the transistors disclosed in one aspect of the present invention will be described. Specifically, the metal oxides and the details of CAC (Cloud-Aligned Composite)-OS will be described below. ed Composite)-OS will be described.

[0543] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a semiconductor function as a whole. When CAC-OS or CAC-metal oxide is used in the channel formation region of a transistor, the conductive function is the function of flowing electrons (or holes) serving as carriers, and the insulating function is the function of not flowing electrons serving as carriers. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating the respective functions, both functions can be maximally enhanced.

[0544] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Further, the conductive region and the insulating region are each in the material. ​ It may be offset. Also, the conductive region may be observed with a blurred periphery and connected in a cloud shape. There are cases where it occurs.

[0545] Also, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less.

[0546] Also, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxi de is composed of a component having a wide band gap due to the insulating region and a component having a narrow band gap due to the conductive region. In this case of such a configuration, when carriers flow, in the component having a narrow band gap, carriers mainly flow. Also, the component having a narrow band gap acts complementarily to the component having a wide band gap, and carriers also flow in the component having a wide band gap in conjunction with the component having a narrow band gap. Therefore, when the above-mentioned C AC-OS or CAC-metal oxide is used for the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field effect mobility can be obtained in the on-state of the transistor. That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite (matrix composite), or a metal matrix composite (metal

[0547] matrix composite). (matrix composite), or a metal matrix composite (metal matrix composite).

[0548] CAC-OS is, for example, a composition of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity of such a size. In the following, in the metal oxide, one or more metal elements are unevenly distributed, and the region having the metal element is in a mixed state of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity of such a size, which is also referred to as a mosaic state or a patch state.

[0549] The metal oxide preferably contains at least indium. In particular, it preferably contains indium and zinc. In addition to these, one or more selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium may be included.

[0550] For example, in the In-Ga-Zn oxide, CAC-OS (among CAC-OS, the In-G a-Zn oxide may be particularly referred to as CAC-IGZO.) refers to indium oxide (hereinafter, InO X1 (where X1 is a real number greater than 0).), or indium zinc oxide (hereinafter, In X2 Zn Y2 O Z2 (where X2, Y2, and Z2 are real numbers greater than 0). ) and gallium oxide (hereinafter, GaO X3 (where X3 is a real number greater than 0). ), or gallium zinc oxide (hereinafter, Ga X4 Zn Y4 O Z4 ​​(X4, Y4, and Z4 (where X4, Y4, and Z4 are real numbers greater than 0).) When the material separates, it becomes mosaic-like, and the mosaic-like InO X1 , or In X2 Zn Y2 O Z2 is uniformly distributed in the film, (hereinafter also referred to as cloud-like).

[0551] That is, CAC-OS is a composite metal oxide having a structure in which a region mainly composed of GaO X3 and a region mainly composed of In X2 Zn Y2 O Z2 , or InO X1 are mixed. In this specification, for example, when the atomic ratio of In to the element M in the first region is greater than the atomic ratio of In to the element M in the second region, it is considered that the concentration of In in the first region is higher than that in the second region.

[0552] Note that IGZO is a general term, and in some cases, it refers to a single compound composed of In, Ga, Zn, and O. As a representative example, InGaO3(ZnO) m1 (where m1 is a natural number), or In (1 +x0) Ga (1-x0) O3(ZnO) m0 (-1 ≤ x0 ≤ 1, m0 is an arbitrary number) can be mentioned as crystalline compounds represented thereby.

[0553] The above crystalline compounds have a single crystal structure, a polycrystalline structure, or a CAAC (c-axis aligned crystal) structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without orientation in the a-b plane.

[0554] On the other hand, CAC-OS relates to the material composition of metal oxides. CAC-OS refers to a structure in which, in a material composition containing In, Ga , Zn, and O, a region observed as nanoparticles mainly composed of Ga in part and a region observed as nanoparticles mainly composed of In in part are randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary element. It should be noted that CAC-OS does not include a laminated structure of two or more types of films with different compositions. For example, a structure composed of two layers, a film mainly composed of In and a film mainly composed of Ga, is not included.

[0555] It should be noted that CAC-OS does not include a laminated structure of two or more types of films with different compositions. For example, a structure composed of two layers, a film mainly composed of In and a film mainly composed of Ga, is not included. included.

[0556] It should be noted that there may be cases where no clear boundary can be observed between the region where GaO X3 is the main component and the region where In X2 Zn Y2 O Z2 , or InO X1 is the main component. included.

[0557] It should be noted that when one or more selected from aluminum, yttrium, copper, vanadium, beryllium , boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum , lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium is included instead of gallium, CAC-OS refers to a structure in which a region observed as nanoparticles mainly composed of the metal element in part and a region observed as nanoparticles mainly composed of In in part are randomly dispersed in a mosaic pattern. In part, a region observed as nanoparticles mainly composed of the metal element and a region observed as nanoparticles mainly composed of In in part are randomly dispersed in a mosaic pattern. say.

[0558] CAC-OS can be formed by a sputtering method, for example, under conditions where the substrate is not intentionally heated. Also, when forming CAC-OS by a sputtering method, as the film-forming gas, one or more selected from an inert gas (typically argon), oxygen gas, and nitrogen gas can be used. Moreover, the lower the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation, the more preferable it is. For example, the flow rate ratio of oxygen gas is preferably 0% or more and less than 30%, more preferably 0% or more and 10% or less.

[0559] CAC-OS, when measured using the θ / 2θ scan by the Out-of-plane method, which is a type of X-ray diffraction (XRD: X-ray diffraction) measurement method, has the characteristic that no distinct peak is observed. That is, it can be understood from X-ray diffraction that there is no orientation in the a-b plane direction and the c-axis direction of the measurement region.

[0560] Also, in the electron diffraction pattern obtained by irradiating CAC-OS with an electron beam having a probe diameter of 1 nm (also referred to as a nano-beam electron beam), regions with high luminance are observed in a ring shape, and a plurality of bright spots are observed in the ring region. Therefore, from the electron diffraction pattern, it can be seen that the crystal structure of CAC-OS has an nc (nano-crystal) structure without orientation in the plane direction and the cross-sectional direction.

[0561] Also, for example, in CAC-OS in In-Ga-Zn oxide, according to the EDX mapping obtained using energy-dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectroscopy), the region where GaO is the main component and X3 InX2 Zn Y2 O Z2 、 or InO X1 is unevenly distributed and mixed with the region mainly composed of It can be confirmed that it has a structure.

[0562] CAC-OS has a structure different from that of the IGZO compound in which metal elements are uniformly distributed, and has properties different from those of the IG ZO compound. That is, CAC-OS has regions mainly composed of GaO X3 etc. as the main component a region, and In X2 Zn Y2 O Z2 、 or InO X1 is phase-separated from each other with the region mainly composed of It has a structure in which regions with each element as the main component are mosaic.

[0563] Here, the region mainly composed of In X2 Zn Y2 O Z2 、 or InO X1 is a region with higher conductivity compared to the region mainly composed of GaO X3 etc. That is, In X2 Zn Y 2O Z2 、 or InO X1 When the region mainly composed of is the main component, the conductivity as an oxide semiconductor is manifested by the flow of carriers. Therefore, In When the region mainly composed of is the main component, the conductivity as an oxide semiconductor is manifested by the flow of carriers. Therefore, In X2 Zn Y2 O Z2 、 or InO X When the region mainly composed of 1 is the main component is distributed in a cloud shape in the oxide semiconductor, high field-effect mobility (μ) can be realized.

[0564] On the other hand, the region mainly composed of GaO X3 etc. is In X2 Zn Y2 O Z2 、 or InO X It is a region with high insulation compared to the region where 1 is the main component. That is, GaO X3 etc. are By distributing the region that is the main component in the oxide semiconductor, the leakage current can be suppressed, and a good etching operation can be realized.

[0565] Therefore, when CAC-OS is used in a semiconductor device, the insulation property caused by GaO X3 etc., and In X2 Zn Y2 O Z2 or InO X1 etc., and the conductivity caused by it act complementarily, so that a high on-current (I on ) and a high field-effect mobility (μ) can be realized. It is possible.

[0566] In addition, the semiconductor device using CAC-OS has high reliability. Therefore, CAC-OS is optimal for various semiconductor devices including displays.

[0567] This embodiment can be appropriately combined with other embodiments.

[0568] (Embodiment 5) In this embodiment, a display module and an electronic device according to an aspect of the present invention will be described.

[0569] The display module 8000 shown in FIG. 34(A) has a display panel 8006, a frame 8009, a printing substrate 8010, and a battery 8011 connected to an FPC 8005 between an upper cover 8001 and a lower cover 800 2.

[0570] For example, a display device manufactured using an aspect of the present invention can be used for the display panel 8006. As a result, a display module can be manufactured with a high yield.

[0571] The upper cover 8001 and the lower cover 8002 can be appropriately changed in shape and dimensions according to the size of the display panel 8006.

[0572] Also, a touch panel may be provided overlaid on the display panel 8006. As the touch panel, a resistive film type or a capacitive type touch panel can be used by overlaying it on the display panel 8006. Further, without providing a touch panel, it is also possible to give the display panel 8006 a touch panel function.

[0573] The frame 8009 has, in addition to the protection function of the display panel 8006, a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed circuit board 8010. Also, the frame 8009 may have a function as a heat sink.

[0574] The printed circuit board 8010 has a power supply circuit and a signal processing circuit for outputting a video signal and a clock signal. As the power supply for supplying power to the power supply circuit, an external commercial power supply may be used, or a power supply by a separately provided battery 8011 may be used. The battery 8011 can be omitted when using a commercial power supply.

[0575] Also, the display module 8000 may be provided with additional members such as a polarizing plate, a retardation plate, and a prism sheet.

[0576] FIG. 34(B) is a schematic cross-sectional view of the display module 8000 including an optical touch sensor.

[0577] The display module 8000 includes a light emitting portion 8015 and a light receiving portion provided on the printed circuit board 8010. It has a part 8016. Also, it has a pair of light guide parts (light guide part 8017a, light guide part 8017b) in the area surrounded by the upper cover 8001 and the lower cover 8002.

[0578] For the upper cover 8001 and the lower cover 8002, for example, plastic or the like can be used. Also, the upper cover 8001 and the lower cover 8002 can each be made thin. For example, the thickness of each cover can be set to be 0.5 mm or more and 5 mm or less. Therefore, the display module 8000 can be made extremely lightweight. Since the upper cover 8001 and the lower cover 8002 can be manufactured with less material, the manufacturing cost can be reduced.

[0579] The display panel 8006 is provided overlapping the printed circuit board 8010 and the battery 8011 with the frame 8009 in between. The display panel 8006 and the frame 8009 are fixed to the light guide part 8017a and the light guide part 8017b.

[0580] The light 8018 emitted from the light emitting part 8015 passes through the upper part of the display panel 8006 by the light guide part 8017a, passes through the light guide part 8017b, and reaches the light receiving part 8016. For example, when the light 8018 is blocked by a detected object such as a finger or a stylus, the touch operation can be detected.

[0581] The light emitting parts 8015 are provided in plurality, for example, along two adjacent sides of the display panel 8006. The light receiving parts 8016 are provided in plurality at positions facing the light emitting parts 8015. Thereby, the information on the position where the touch operation is performed can be obtained.

[0582] ​​​​​​​​​​The light emitting unit 8015 can use a light source such as an LED element. In particular, as the light emitting unit 8 015, it is preferable to use a light source that emits infrared rays which are not visible to the user and are harmless to the user.

[0583] The light receiving unit 8016 can use a photoelectric element that receives the light emitted by the light emitting unit 8015 and converts it into an electrical signal. Preferably, a photodiode capable of receiving infrared rays can be used.

[0584] As the light guide parts 8017a and 8017b, at least a member that transmits the light 8018 can be used. By using the light guide parts 8017a and 8017b, the light emitting unit 8 015 and the light receiving unit 8016 can be arranged below the display panel 8006, and it is possible to suppress external light from reaching the light receiving unit 8016 and causing the touch sensor to malfunction. In particular, it is preferable to use a resin that absorbs visible light and transmits infrared rays. Thereby, the malfunction of the touch sensor can be more effectively suppressed.

[0585] According to one aspect of the present invention, an electronic device having a curved surface and high reliability can be manufactured. Also, according to one aspect of the present invention, a flexible and highly reliable electronic device can be manufactured.

[0586] Examples of the electronic device include a television device, a desktop or notebook personal computer, a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio playback device, and a large game machine such as a pachinko machine.

[0587] ​​​​​​​​​​​In addition, the display device according to one aspect of the present invention can achieve high visibility regardless of the intensity of external light. Therefore, it can be suitably used for portable electronic devices, wearable electronic devices (wearable devices), and electronic book terminals.

[0588] The portable information terminal 800 shown in FIGS. 35(A) and (B) includes a housing 801, a housing 802, a display unit 8 03, and a hinge portion 805.

[0589] The housing 801 and the housing 802 are connected by the hinge portion 805. The portable information terminal 800 can be unfolded from the folded state (FIG. 35(A)) as shown in FIG. 35(B). Thereby, it has excellent portability when carried, and excellent visibility due to a large display area when used.

[0590] A flexible display unit 803 is provided across the housing 801 and the housing 802 connected by the hinge portion 805 in the portable information terminal 800.

[0591] The display device manufactured using one aspect of the present invention can be used for the display unit 803. This makes it possible to manufacture a portable information terminal with a high yield.

[0592] The display unit 803 can display at least one of document information, still images, moving images, etc. When document information is displayed on the display unit, the portable information terminal 800 can be used as an electronic book terminal.

[0593] When the portable information terminal 800 is unfolded, the display unit 803 is held in a largely curved form. For example, it is curved with a radius of curvature of 1 mm or more and 50 mm or less, preferably 5 mm or more and 30 mm or less. The display unit 803 is supported by the housing 801 and the cover 802. 802, pixels are continuously arranged, making it possible to display a curved surface.

[0594] The display unit 803 functions as a touch panel and can be operated by a finger, a stylus, etc. can.

[0595] It is preferable that the display unit 803 is composed of one flexible display. This makes it possible to perform continuous, uninterrupted display between the housing 801 and the housing 802. In addition, a display may be provided on each of the housings 801 and 802. You may do so.

[0596] The hinge portion 805 is a portion that connects the housing 801 and the housing 802 when the mobile information terminal 800 is unfolded. It is preferable to have a locking mechanism to prevent the angle from becoming larger than a predetermined angle. For example, the angle at which the door will lock (will not open any further) must be greater than 90 degrees and less than 180 degrees. Typically, the angle is 90 degrees, 120 degrees, 135 degrees, 150 degrees, or 17 degrees. 5 degrees, etc. This improves the convenience, safety, and Reliability can be improved.

[0597] If the hinge unit 805 has a locking mechanism, the display unit 803 can be opened without applying excessive force. Therefore, it is possible to prevent the display unit 803 from being damaged. It can be achieved.

[0598] The housing 801 and the housing 802 are provided with a power button, an operation button, an external connection port, a speaker, a microphone, and the like. It may have an inch or the like.

[0599] Either the housing 801 or the housing 802 is provided with a wireless communication module, and it can send and receive data via computer networks such as the Internet, LAN (Local Area Network), and Wi-Fi (registered trademark ).

[0600] The portable information terminal 810 shown in Fig. 35(C) includes a housing 811, a display unit 812, operation buttons 81 3, an external connection port 814, a speaker 815, a microphone 816, a camera 817, etc.

[0601] The display device manufactured using one aspect of the present invention can be used for the display unit 812. By doing so, a portable information terminal can be manufactured with a high yield.

[0602] The portable information terminal 810 is provided with a touch sensor on the display unit 812. Any operation such as making a call or inputting characters can be performed by touching the display unit 812 with a finger or a stylus, etc.

[0603] Also, by operating the operation buttons 813, it is possible to turn the power on and off and switch the type of image displayed on the display unit 812. For example, it is possible to switch from the mail creation screen to the main menu screen.

[0604] In addition, by providing a detection device such as a gyro sensor or an acceleration sensor inside the portable information terminal 810, the orientation (portrait or landscape) of the portable information terminal 810 can be determined, and the screen display orientation of the display unit 812 can be automatically switched. Also, the switching of the screen display orientation can be performed by touching the display unit 812, operating the operation buttons 813, or using voice input using the microphone 816, etc. ​​

[0605] The mobile information terminal 810 has one or more functions selected from, for example, a telephone, a notebook, an information browsing device, etc. Specifically, it can be used as a smartphone. The mobile information terminal 810 can execute various applications such as mobile phone, email, text browsing and creation, music playback, video playback, Internet communication, games, etc.

[0606] The camera 820 shown in FIG. 35(D) has a housing 821, a display unit 822, operation buttons 823, a shutter button 824, etc. A detachable lens 826 is attached to the camera 820.

[0607] The display device manufactured using one aspect of the present invention can be used for the display unit 822. As a result, a camera can be manufactured with a high yield.

[0608] Here, the camera 820 is configured such that the lens 826 can be removed from the housing 821 and replaced, but the lens 826 and the housing 821 may be integrated.

[0609] The camera 820 can capture a still image or a moving image by pressing the shutter button 824. Further, the display unit 822 has a function as a touch panel, and it is also possible to capture an image by touching the display unit 822.

[0610] In addition, the camera 820 can be separately equipped with a strobe device, a viewfinder, etc. Or these may be incorporated in the housing 821.

[0611] ​​​​​​​​​​36(A) to (E) are diagrams showing electronic devices. These electronic devices are equipped with a housing 9000. , a display unit 9001, a speaker 9003, and operation keys 9005 (power switch or operation switch switch), connection terminal 9006, sensor 9007 (force, displacement, position, speed, acceleration, Angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current The ability to measure voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared The device has a microphone 9008 and the like.

[0612] A display device manufactured according to one embodiment of the present invention can be suitably used for the display portion 9001. This allows electronic devices to be manufactured with high yields.

[0613] The electronic devices shown in Figures 36(A) to 36(E) can have various functions. Functions for displaying various information (still images, videos, text images, etc.) on the display unit, touch panel function Functions such as displaying calendars, dates, or times, and various software (programs) ) to control processing, wireless communication function, and wireless communication function to connect various computers The function to connect to a data network, and the function to transmit or receive various data using wireless communication functions. The function to be performed, read out the program or data recorded on the recording medium and display it on the display unit The electronic device shown in Figs. 36(A) to (E) can have the following functions. The functions are not limited to these, and other functions may be included.

[0614] FIG. 36A shows a wristwatch-type portable information terminal 9200, and FIG. 36B shows a wristwatch-type portable information 92 is a perspective view showing a terminal 9201.

[0615] The mobile information terminal 9200 shown in FIG. 36(A) can execute various applications such as mobile phone, e-mail, text viewing and creation , music playback, Internet communication, computer games, etc. . Further, the display unit 9001 is provided with a curved display surface, and can perform display along the curved display surface. In addition, the mobile information terminal 9200 can execute short-range wireless communication conforming to a communication standard. For example, it can also make hands-free calls by communicating with a wireless headset that can communicate wirelessly. In addition, the mobile information terminal 9200 has a connection terminal 9006 and can directly exchange data with other information terminals via a connector. It can also be charged via the connection terminal 9006. Note that the charging operation may be performed by wireless power supply without using the connection terminal 9006.

[0616] Unlike the mobile information terminal shown in FIG. 36(A), the display surface of the display unit 9001 of the mobile information terminal 9201 shown in FIG. 36(B) is not curved. In addition, the outer shape of the display unit of the mobile information terminal 9201 is non-rectangular (circular in FIG. 36(B)).

[0617] FIGS. 36(C) to (E) are perspective views showing a foldable mobile information terminal 9202. Note that FIG. 36(C) is a perspective view of the mobile information terminal 9202 in an unfolded state, and FIG. 36(D) is a perspective view of a state in the process of changing from one of the unfolded state or the folded state of the mobile information terminal 9202 to the other, and FIG. 36(E) is a perspective view of the mobile information terminal 9202 in a folded state.

[0618] When folded, the mobile information terminal 9202 has excellent portability, and when unfolded, there is no joint It has an excellent display listability due to a wide display area without The display unit 9001 of the portable information terminal 9202 is supported by three housings 9000 connected by a hinge 9055. By bending between two housings 9000 via the hinge 9055, the portable information terminal 9 202 can be reversibly deformed from the unfolded state to the folded state. For example , the portable information terminal 9202 can be bent with a radius of curvature of 1 mm or more and 150 mm or less.

[0619] This embodiment can be appropriately combined with other embodiments.

Example

[0620] In this example, the results of peeling the resin layer from the production substrate will be described.

[0621] Using FIG. 37, the method for producing the sample of this example will be described. In this example, three types of samples were produced.

[0622] First, a metal layer 19 was formed on the production substrate 14 (FIG. 37(A)).

[0623] For the production substrate 14, a glass substrate with a thickness of about 0.7 mm was used. As the metal layer 19, a titanium film with a thickness of about 5 nm was formed using the sputtering method.

[0624] Next, H2O plasma treatment was performed on the surface of the metal layer 19 (see plasma 3 0 in FIG. 37(A)), and a titanium oxide film which is a metal oxide layer 20 was formed (FIG. 37(B)).

[0625] The H2O plasma treatment has different bias powers depending on the sample. Specifically, as the bias power , 2000 W (sample 1A), 3000 W (sample 1B), and 4500 W (sample 1 The three conditions of (C) were used. The ICP power was 0 W, the pressure was 15 Pa, the temperature of the lower electrode was 40 °C, the processing time was 600 sec, and water vapor with a flow rate of 250 sccm was used as the process gas. The H2O plasma treatment was performed at room temperature.

[0626] Next, a first layer 24 was formed on the metal oxide layer 20 (Fig. 37(C)). The first layer 24 had photosensitivity and was formed using a material containing a polyimide resin precursor. When the material was applied, the film thickness was about 2.0 μm.

[0627] Next, a resin layer 23 was formed by performing a heat treatment on the first layer 24 (Fig. 37(D)). As the heat treatment, baking was performed at 480 °C for 1 hour in an air atmosphere.

[0628] Next, a layer to be peeled 25 was formed on the resin layer 23 (Fig. 37(E)). The layer to be peeled 25 formed here had a laminated structure assuming the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in Fig. 5(E). Specifically, a silicon oxynitride film with a thickness of about 100 nm, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were formed in this order on the resin layer 23. These films were formed under the conditions of a substrate temperature of 330 °C using the plasma CVD method.

[0629] Then, a UV peeling tape was attached to the layer to be peeled 25 (corresponding to the adhesive layer 75b and the substrate 75a in Fig. 37(E)).

[0630] For the sample of this example, a peeling test was performed to peel the resin layer 23 from the production substrate 14. For the peeling test, a jig as shown in Fig. 38 was used. The jig shown in Fig. 38 had a plurality of guide rods ​​​​It has a roller 154 and a support roller 153. As a measurement method, first, a tape 151 is attached to a layer 150 including a layer to be peeled off pre-formed on a production substrate 14, and the end is partially peeled off. Next, the production substrate 14 is attached to a jig so that the tape 151 is hooked on the support roller 153, and the tape 151 and the layer 150 including the layer to be peeled off are made perpendicular to the production substrate 14. Here, the tape 151 is pulled in a direction perpendicular to the production substrate 14 (at a speed of 20 mm / min), and when the layer 150 including the layer to be peeled off is peeled off from the production substrate 14, the force required for peeling can be measured by measuring the pulling force in the perpendicular direction. During this peeling process, while the metal oxide layer 20 is exposed, the production substrate 14 travels in its surface direction along the guide roller 154. The support roller 153 and the guide roller 154 are rotatably provided to eliminate the influence of friction during the travel of the layer 150 including the layer to be peeled off and the production substrate 14. For the peeling test, a small bench-top testing machine (EZ-TEST EZ-S-50N) manufactured by Shimadzu Corporation and an adhesive tape and adhesive sheet test method compliant with the standard number JIS Z0237 of the Japanese Industrial Standards (JIS) were used. The dimensions of the sample were 126 mm × 25 mm. Before peeling, water was supplied from the end of the sample (refer to the liquid supply mechanism 21 in Fig. 37(F)). Figs. 39(A) to (C) show the peeling results of the sample. In Figs. 39(A) to (C), the upper side of the solid line is the substrate 75a side, and the lower side is the production substrate 14 side. Fig. 39(A) shows the result of sample 1A with a bias power of 2000 W for H2O plasma treatment. Fig. 39(B) is

[0631]

[0632]

[0633] ​​​​​​​​​​​The result of Sample 1B with a bias power of 3000 W. Figure 39(C) shows the bias power is the result of Sample 1C with 4500 W.

[0634] As shown in FIGS. 39(A) to (C), the resin layer 23 remained on the substrate 75a side, and no resin layer 23 remained on the fabricated substrate 14 side. In this example, it is considered that separation could be achieved at the interface between the metal oxide layer 20 and the resin layer 23.

[0635] Also, the force required for peeling of each sample was approximately 0.24 N for Sample 1A, approximately 0.22 N for Sample 1B, and approximately 0.16 N for Sample 1C. From this, it was found that the greater the bias power of the H2O plasma treatment, the smaller the force required for peeling.

[0636] Note that, instead of the H2O plasma treatment, an O2 plasma treatment may be performed on the surface of the metal layer 19 to form a titanium oxide film as the metal oxide layer 20. When samples were fabricated and subjected to a peeling test under this condition, peeling could be performed in the same manner as Samples 1A to 1C. The force required for peeling was approximately 0.21 N.

[0637] Also, a plasma treatment using a mixed gas of H2O and Ar may be performed on the surface of the metal layer 19 to form a titanium oxide film as the metal oxide layer 20. When samples were fabricated and subjected to a peeling test under this condition, peeling could be performed in the same manner as Samples 1A to 1C. The force required for peeling was approximately 0.15 N.

[0638] The conditions for the plasma treatment using a mixed gas of H2O and Ar were a bias power of 4500 W, an ICP power of 0 W, a pressure of 15 Pa, a lower electrode temperature of 40°C, and a treatment time of 600 sec. ​​and water vapor with a flow rate of 125 sccm and argon gas with a flow rate of 125 sccm were used as the process gas. The plasma treatment was performed at room temperature.

[0639] As described above, in this example, using the peeling method of one aspect of the present invention, the resin layer 23 could be peeled from the production substrate 14.

Example

[0640] In this example, the results of peeling the resin layer from the production substrate will be described.

[0641] Using FIG. 4, the method for preparing the sample of this example will be described. In this example, six types of samples were prepared.

[0642] First, a metal oxide layer 20 was formed on the production substrate 14 (FIG. 4(A1)).

[0643] A glass substrate with a thickness of about 0.7 mm was used for the production substrate 14.

[0644] In sample 2A, a titanium oxide film was formed as the metal oxide layer 20. Specifically, first, a titanium film with a thickness of about 5 nm was formed using the sputtering method. Then, while flowing a mixed gas of nitrogen gas and oxygen gas (580 NL / min, oxygen concentration 20%), baking was performed at 450 °C for 1 hour to form a titanium oxide film.

[0645] In sample 2B, an aluminum oxide film was formed as the metal oxide layer 20. Specifically, first, an aluminum film with a thickness of about 5 nm was formed using the sputtering method. Then, baking was performed under the same conditions as sample 2A to form an aluminum oxide film.

[0646] ​​​​In Sample 2C, an indium zinc oxide film was formed as the metal oxide layer 20. Specifically, first, an indium zinc oxide film with a thickness of about 5 nm was formed using a sputtering method. After that, baking was performed under the same conditions as in Sample 2A.

[0647] In Sample 2D, a titanium oxide film was formed as the metal oxide layer 20. Specifically, first, a titanium film with a thickness of about 5 nm was formed using a sputtering method. After that, a titanium oxide film was formed by performing H2O plasma treatment on the surface of the titanium film. The H2O plasma treatment was performed at room temperature, with an ICP power of 0 W, a bias power of 4500 W, a pressure of 15 Pa, a lower electrode temperature of 40 °C, a treatment time of 600 sec, and oxygen with a flow rate of 250 sccm was used as the process gas.

[0648] In Sample 2E, an aluminum oxide film was formed as the metal oxide layer 20. Specifically, first, an aluminum film with a thickness of about 5 nm was formed using a sputtering method. After that, an aluminum oxide film was formed by performing H2O plasma treatment on the surface of the aluminum film. The conditions for the H2O plasma treatment were the same as those in Sample 2D.

[0649] In Sample 2F, an indium zinc oxide film was formed as the metal oxide layer 20. Specifically, first, an indium zinc oxide film with a thickness of about 5 nm was formed using a sputtering method. After that, H2O plasma treatment was performed on the surface of the indium zinc oxide film. The H2 O plasma treatment conditions were the same as those in Sample 2D.

[0650] Next, a first layer 24 was formed on the metal oxide layer 20 (FIG. 4(B)). The first layer 24 is , it was formed using a material having photosensitivity and containing a polyimide resin precursor. When the material was coated, the film thickness was about 2.0 μm. When coated, the film thickness was about 2.0 μm.

[0651] Next, the resin layer 23 was formed by performing heat treatment on the first layer 24 (Fig. 4(C)). As the heat treatment, baking was performed at 480 °C for 1 hour in an air atmosphere. As the heat treatment, baking was performed at 480 °C for 1 hour in an air atmosphere.

[0652] Next, a layer to be peeled 25 was formed on the resin layer 23 (Fig. 4(D)). The layer to be peeled 25 formed here had a laminated structure assuming the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in Fig. 5(E). Specifically, a silicon oxynitride film with a thickness of about 100 nm, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were formed in this order on the resin layer 23. These films were formed under the conditions of a substrate temperature of 330 °C using the plasma CVD method. Next, a layer to be peeled 25 was formed on the resin layer 23 (Fig. 4(D)). The layer to be peeled 25 formed here had a laminated structure assuming the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in Fig. 5(E). Specifically, a silicon oxynitride film with a thickness of about 100 nm, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were formed in this order on the resin layer 23. These films were formed under the conditions of a substrate temperature of 330 °C using the plasma CVD method. Next, a layer to be peeled 25 was formed on the resin layer 23 (Fig. 4(D)). The layer to be peeled 25 formed here had a laminated structure assuming the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in Fig. 5(E). Specifically, a silicon oxynitride film with a thickness of about 100 nm, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were formed in this order on the resin layer 23. These films were formed under the conditions of a substrate temperature of 330 °C using the plasma CVD method. Next, a layer to be peeled 25 was formed on the resin layer 23 (Fig. 4(D)). The layer to be peeled 25 formed here had a laminated structure assuming the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in Fig. 5(E). Specifically, a silicon oxynitride film with a thickness of about 100 nm, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were formed in this order on the resin layer 23. These films were formed under the conditions of a substrate temperature of 330 °C using the plasma CVD method. Next, a layer to be peeled 25 was formed on the resin layer 23 (Fig. 4(D)). The layer to be peeled 25 formed here had a laminated structure assuming the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in Fig. 5(E). Specifically, a silicon oxynitride film with a thickness of about 100 nm, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were formed in this order on the resin layer 23. These films were formed under the conditions of a substrate temperature of 330 °C using the plasma CVD method. Next, a layer to be peeled 25 was formed on the resin layer 23 (Fig. 4(D)). The layer to be peeled 25 formed here had a laminated structure assuming the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in Fig. 5(E). Specifically, a silicon oxynitride film with a thickness of about 100 nm, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were formed in this order on the resin layer 23. These films were formed under the conditions of a substrate temperature of 330 °C using the plasma CVD method.

[0653] Then, a UV peeling tape was attached to the layer to be peeled 25 (corresponding to the adhesive layer 75b and the substrate 75a in Fig. 4(D)). Then, a UV peeling tape was attached to the layer to be peeled 25 (corresponding to the adhesive layer 75b and the substrate 75a in Fig. 4(D)).

[0654] For the sample of this example, a peeling test was performed to peel the resin layer 23 from the production substrate 14. The peeling test was performed under the same conditions as in Example 1. For the sample of this example, a peeling test was performed to peel the resin layer 23 from the production substrate 14. The peeling test was performed under the same conditions as in Example 1.

[0655] Before peeling, water was supplied from the end of the sample (see the liquid supply mechanism 21 in Fig. 4(E)).

[0656] Figs. 40(A) to (F) show the peeling results of the sample. In Figs. 40(A) to (F), the upper side of the solid line is the substrate 75a side, and the lower side is the production substrate 14 side. Fig. 40(A) shows the result of the sample 2A on which the titanium oxide film was formed by baking. Fig. 40(B) shows the result of the sample 2A on which the titanium oxide film was formed by baking. Figs. 40(A) to (F) show the peeling results of the sample. In Figs. 40(A) to (F), the upper side of the solid line is the substrate 75a side, and the lower side is the production substrate 14 side. Fig. 40(A) shows the result of the sample 2A on which the titanium oxide film was formed by baking. Fig. 40(B) shows the result of the sample 2A on which the titanium oxide film was formed by baking. Figs. 40(A) to (F) show the peeling results of the sample. In Figs. 40(A) to (F), the upper side of the solid line is the substrate 75a side, and the lower side is the production substrate 14 side. Fig. 40(A) shows the result of the sample 2A on which the titanium oxide film was formed by baking. Fig. 40(B) shows the result of the sample 2A on which the titanium oxide film was formed by baking. The result of sample 2B with an aluminum oxide film formed. Figure 40(C) shows the result of sample 2C baked on an indium zinc oxide film. Figure 40(D) shows the result of sample 2D with a titanium oxide film formed by plasma treatment. Figure 40(E) shows the result of sample 2E with an aluminum oxide film formed by plasma treatment. Figure 40(F) shows the result of sample 2F with plasma treatment on an indium zinc oxide film. The result of sample 2C baked on an indium zinc oxide film. Figure 40(D) shows the result of sample 2D with a titanium oxide film formed by plasma treatment. The result of sample 2D with a titanium oxide film formed by plasma treatment. Figure 40(E) shows the result of sample 2E with an aluminum oxide film formed by plasma treatment. The result of sample 2E with an aluminum oxide film formed by plasma treatment. Figure 40(F) shows the result of sample 2F with plasma treatment on an indium zinc oxide film. The result of sample 2F with plasma treatment on an indium zinc oxide film.

[0657] As shown in Figures 40(A) to (F), the resin layer 23 remained on the substrate 75a side, and the resin layer 23 did not remain on the fabricated substrate 14 side. It is considered that separation could be achieved at the interface between the metal oxide layer 20 and the resin layer 23. The resin layer 23 did not remain on the fabricated substrate 14 side. It is considered that separation could be achieved at the interface between the metal oxide layer 20 and the resin layer 23. It is considered that separation could be achieved at the interface between the metal oxide layer 20 and the resin layer 23.

[0658] Also, the force required for peeling each sample was approximately 0.19 N for sample 2A, approximately 0.34 N for sample 2B, approximately 0.22 N for sample 2C, approximately 0.21 N for sample 2D, approximately 0.27 N for sample 2E, and approximately 0.17 N for sample 2F. It was approximately 0.17 N for sample 2F.

[0659] As described above, in this example, using the peeling method of one aspect of the present invention, the resin layer 23 could be peeled from the fabricated substrate 14. The resin layer 23 could be peeled from the fabricated substrate 14.

Example

[0660] In this example, the results of peeling the resin layer from the fabricated substrate will be described.

[0661] The method for fabricating the samples of this example will be described with reference to Figure 4.

[0662] First, a metal oxide layer 20 was formed on the fabricated substrate 14 (Figure 4(A1)). The fabricated substrate 14 used a glass substrate with a thickness of approximately 0.7 mm. As the metal oxide layer 20, a titanium oxide film was formed. Specifically, first, a titanium film with a thickness of about 5 nm was formed by sputtering. Then, while flowing a mixed gas of nitrogen gas and oxygen gas (580 NL / min, oxygen concentration 20 %), baking was performed at 450 °C for 1 hour to oxidize the titanium film and form a titanium oxide film.

[0663] Next, a first layer 24 was formed on the metal oxide layer 20 (Fig. 4(B)). The first layer 24 has photosensitivity and was formed using a material containing a polyimide resin precursor. The film thickness when the material was coated was about 2.0 μm.

[0664] Next, by performing heat treatment on the first layer 24, a resin layer 23 was formed (Fig. 4(C)). As the heat treatment, baking was performed at 480 °C for 1 hour in an air atmosphere.

[0665] Next, a layer to be peeled 25 was formed on the resin layer 23 (Fig. 4(D)). The layer to be peeled 25 formed here had a laminated structure assuming the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in Fig. 5(E). Specifically, on the resin layer 23, a silicon oxynitride film with a thickness of about 400 nm, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were formed in this order. These films were formed using the plasma CVD method under the condition of a substrate temperature of 330 °C . At this time, cross-sectional STEM (Scanning Transmission

[0666] Electron Microscopy) photographs of the sample are shown in Figs. 41(A) and (B). From Fig. 41 (A), it was found that the thickness of the resin layer 23 was about 0.79 μm. From Fig. 41(B), the metal (A), it was found that the thickness of the resin layer 23 was about 0.79 μm. From Fig. 41(B), the metal The thickness of the oxide layer 20 was found to be approximately 19.2 nm. In the cross-sectional observation, no titanium film was confirmed. Therefore, it is considered that all the titanium films were oxidized and became titanium oxide films.

[0667] Then, a UV peeling tape was attached to the peeled layer 25 (corresponding to the adhesive layer 75b and the base plate 75a in Fig. 4(D)).

[0668] For the sample of this example, a peeling test was conducted to peel the resin layer 23 from the production substrate 14.

[0669] For the peeling test, a small desktop testing machine (EZ-TEST EZ-S-50N) manufactured by Shimadzu Corporation and the adhesive tape and adhesive sheet test method conforming to the standard number JIS Z0237 of the Japanese Industrial Standards (JIS) were used. The dimensions of the sample were 126 mm × 25 mm.

[0670] Fig. 42(A) shows the peeling result of the sample. In Fig. 42(A), the upper side of the solid line is the substrate 75a side, and the lower side is the production substrate 14 side.

[0671] As shown in Fig. 42(A), the resin layer 23 remained on the substrate 75a side, and the resin layer 23 did not remain on the production substrate 14 side.

[0672] Fig. 42(B) shows the cross-sectional STEM photograph of the production substrate 14 side. From Fig. 42(B), the thickness of the metal oxide layer 20 was found to be approximately 12.6 nm. In the cross-sectional observation, no resin layer 23 was confirmed. The layer on the metal oxide layer 20 is a film formed for STEM observation.

[0673] Regarding the peeling surface on the substrate 75a side, when composition analysis was performed using X-ray photoelectron spectroscopy (XPS: X-ray Photoelectron Spectroscopy), Ti was ​​​​​​​​It was not detected.

[0674] From these results, it can be considered that separation was possible at the interface between the metal oxide layer 20 and the resin layer 23. It is conceivable.

[0675] Depending on the conditions of the heat treatment performed on the first layer 24, the production substrate 14 and the resin layer 23 may not be easily separable. For example, when a bake is performed on the first layer 24 at 450 °C for 1 hour while flowing a mixed gas of nitrogen gas and oxygen gas (580 NL / min, oxygen concentration 20%), in the above peeling test, the production substrate 14 and the resin layer 23 may not be separable. For example, when a bake is performed on the first layer 24 at 450 °C for 1 hour while flowing a mixed gas of nitrogen gas and oxygen gas (580 NL / min, oxygen concentration 20%), in the above peeling test, the production substrate 14 and the resin layer 23 may not be separable. For example, when a bake is performed on the first layer 24 at 450 °C for 1 hour while flowing a mixed gas of nitrogen gas and oxygen gas (580 NL / min, oxygen concentration 20%), in the above peeling test, the production substrate 14 and the res...

Claims

1. Form a metal layer on a substrate, perform plasma treatment on the surface of the metal layer in an atmosphere containing water vapor, form a resin layer in contact with the metal layer, form a transistor having an oxide semiconductor containing indium in a channel formation region above the resin layer, A method for manufacturing a semiconductor device that separates the metal layer and the resin layer.

2. In Claim 1, the metal layer is formed to have one or more of titanium, molybdenum, aluminum, tungsten, silicon, indium, zinc, gallium, tantalum, and tin. A method for manufacturing a semiconductor device.

3. In Claim 1 or Claim 2, the metal layer is formed to have one or both of titanium and titanium oxide. A method for manufacturing a semiconductor device.

4. In any one of Claims 1 to 3, the metal layer is formed to have a laminated structure of titanium and titanium oxide. A method for manufacturing a semiconductor device.

5. In any one of Claims 1 to 4, the step of separating the metal layer and the resin layer is performed while supplying a liquid to the separation interface. A method for manufacturing a semiconductor device.

6. In Claim 5, the liquid contains water. A method for manufacturing a semiconductor device.

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