Integrated circuit device

Abstract

To provide an integrated circuit device comprising a temperature sensor that can early detect an overheat state due to a heating element and prevent trouble in operation of elements.SOLUTION: An integrated circuit device 20 includes a heating element 30 and a temperature sensor 40 that detects the temperature of the heating element 30. The contour of the integrated circuit device 20 has a first side SD1 and a second side SD2 that intersects with the first side SD1, and when a direction along the first side SD1 of the integrated circuit device 20 is an X-direction and a direction along the second side SD2 is a Y-direction, the heating element 30 is formed of a first heating element 31 and a second heating element 32 that is arranged side by side with the first heating element 31 along the Y-direction with an area AR therebetween. The temperature sensor 40 is arranged at an arrangement position in which a position in the X-direction is a position between the center of the area AR and the second side SD2, and a position in the Y-direction is a position between the first heating element 31 and the second heating element 32.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an integrated circuit device and the like.

Background Art

[0002] Patent Document 1 discloses an arrangement method of a bridge circuit for improving the detection time and detection accuracy of an overheated state in a circuit device for driving a DC motor or the like.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In Patent Document 1, since the shape of the transistor serving as a heating element and the arrangement direction when arranging it in a specific region on the chip are not considered, heat bias inside the chip has occurred. When a temperature sensor is arranged without considering this heat bias, it becomes a problem that an overheated state cannot be detected quickly and the detection accuracy cannot be improved.

Means for Solving the Problems

[0005] One aspect of the present disclosure relates to an integrated circuit device including a heating element and a temperature sensor that detects the temperature of the heating element, wherein the outer shape of the integrated circuit device has a first side and a second side intersecting the first side, and when the direction along the first side of the integrated circuit device is defined as the X direction and the direction along the second side is defined as the Y direction, the heating element is composed of a first heating element and a second heating element arranged side by side along the Y direction with a region interposed therebetween, and the temperature sensor is arranged at an arrangement position where the position in the X direction is between the center of the region and the second side, and the position in the Y direction is between the first heating element and the second heating element.

[0006] Another aspect of the present disclosure includes a charging transistor that charges a load, a discharging transistor that discharges the load, a control circuit that controls the current flowing through the charging transistor and the current flowing through the discharging transistor, a first temperature sensor that detects the temperature of the charging transistor, and a second temperature sensor that detects the temperature of the discharging transistor. The outer shape of the integrated circuit device has a first side and a second side that intersects the first side. When the direction along the first side of the integrated circuit device is defined as the X direction and the direction along the second side is defined as the Y direction, the charging transistor is composed of a first charging transistor and a second charging transistor that are arranged side by side along the Y direction with the first charging transistor sandwiching a first region. The discharging transistor is composed of a first discharging transistor and a second discharging transistor that are arranged side by side along the Y direction with the first discharging transistor sandwiching a second region. The first temperature sensor is arranged at a first arrangement position where the position in the X direction is between the center of the first region and the second side, and the position in the Y direction is between the first charging transistor and the second charging transistor. The second temperature sensor is related to an integrated circuit device that is arranged at a second arrangement position where the position in the X direction is between the center of the second region and the second side, and the position in the Y direction is between the first discharging transistor and the second discharging transistor.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

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Figure 10

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Figure 13

Mode for Carrying Out the Invention

[0008] Hereinafter, preferred embodiments of the present disclosure will be described in detail. Note that the embodiments described below do not unduly limit the content described in the claims, and not all of the configurations described in the embodiments are essential constituent elements.

[0009] 1. Integrated Circuit Device FIG. 1 is a basic configuration example of the integrated circuit device 20 of the present embodiment. The integrated circuit device 20 includes a heating element 30 and a temperature sensor 40. FIGS. 1 and FIGS. 3, 4, 7, 8, 12, 13 described later show the layout arrangement of the integrated circuit device 20 in a plan view. The plan view is, for example, a plan view in a direction orthogonal to the substrate of the integrated circuit device 20. The integrated circuit device 20 of the present embodiment can also be used for a heater circuit. Further, the integrated circuit device 20 of the present embodiment can be used as a heater circuit used, for example, in a thermostat type crystal oscillator.

[0010] The integrated circuit device 20 is an IC (Integrated Circuit) manufactured, for example, by a semiconductor process, and is a semiconductor chip on which circuit elements are formed on a semiconductor substrate. The outer shape of the integrated circuit device 20 has a first side SD1 and a second side SD2 that intersects the first side SD1. The outer shape of the integrated circuit device 20 also includes a third side SD3 that is the opposite side of the first side SD1 and a fourth side SD4 that is the opposite side of the second side SD2. The outer shape of the integrated circuit device 20 is the outer shape of, for example, a rectangular semiconductor chip that is the integrated circuit device 20. For example, the first side SD1, the second side SD2, the third side SD3, and the fourth side SD4 are the sides of the substrate of the semiconductor chip. The semiconductor chip is also called a silicon die. Here, in the present embodiment, the direction along the first side SD1 of the integrated circuit device 20 is defined as the X direction, and the direction along the second side SD2 is defined as the Y direction. Also, the direction orthogonal to the X direction and the Y direction is defined as the Z direction. The Z direction is the direction orthogonal to the semiconductor substrate of the integrated circuit device 20. The X direction, the Y direction, and the Z direction are the X-axis direction, the Y-axis direction, and the Z-axis direction, respectively.

[0011] The heating element 30 is an element that generates heat. The heating element 30 can be realized by, for example, a transistor such as a MOS transistor or a bipolar transistor, or a resistance element. When the heating element 30 is realized by a MOS transistor, the MOS transistor may be an N-type transistor or a P-type transistor.

[0012] The heating element 30 includes a first heating element 31 and a second heating element 32. Specifically, the heating element 30 is composed of the first heating element 31 and the second heating element 32 which is arranged side by side along the Y direction with the first heating element 31 across the region AR. The first heating element 31 and the second heating element 32 are arranged at a predetermined distance along the Y direction. The predetermined distance is, for example, about 20 μm. The outer shape of the first heating element 31 has sides SA1 and SB1. In FIG. 1, side SA1 is the long side and side SB1 is the short side. Also, the outer shape of the second heating element 32 has sides SA2 and SB2. In FIG. 1, side SA2 is the long side and side SB2 is the short side. Sides SB1 and SB2 are, for example, about 180 μm. Note that the outer shape of each of the first heating element 31 and the second heating element 32 only needs to have at least sides SA1 and SA2, and sides SB1 and SB2, and may be an outer shape of a polygon other than a rectangle. In FIG. 1, side SA1 of the heating element 30 is along the X direction and side SB1 is along the Y direction. Also, in FIG. 1, side SA2 of the heating element 30 is along the X direction and side SB2 is along the Y direction.

[0013] The temperature sensor 40 is a sensor circuit that detects temperature. Specifically, the temperature sensor 40 outputs a temperature-dependent voltage that changes according to the temperature of the environment as a temperature detection voltage. For example, the temperature sensor 40 generates a temperature detection voltage using a circuit element having temperature dependence. Specifically, the temperature sensor 40 outputs a temperature detection voltage whose voltage value changes depending on temperature by using the temperature dependence of the forward voltage of the PN junction. As the forward voltage of the PN junction, for example, the base-emitter voltage of a bipolar transistor can be used. When performing digital temperature compensation processing, the temperature sensor 40 measures the temperature such as the ambient temperature and outputs the result as temperature detection data.

[0014] The temperature sensor 40 is provided to detect the temperatures of the first heating element 31, the second heating element 32, and their surroundings. The temperature sensor 40 is arranged at a position where the position in the X direction is between the center of the region AR and the second side SD2, and the position in the Y direction is between the first heating element 31 and the second heating element 32. For example, let the X coordinate of the arrangement position of the temperature sensor 40 be XT, the X coordinate of the center of the region AR be XC, and the X coordinate of the second side SD2 be XS. In this case, for example, the relational expression XC < XT < XS holds. Also, let the Y coordinate of the arrangement position of the temperature sensor 40 be YT, the Y coordinate of the side opposite to the side SA1 of the first heating element 31 be Y1, and the Y coordinate of the side opposite to the side SA2 of the second heating element 32 be Y2. In this case, for example, the relational expression Y2 < YT < Y1 holds.

[0015] Here, the region AR is the region existing between the first heating element 31 and the second heating element 32. Specifically, the region AR is a region surrounded by the first region side ASD1, the second region side ASD2, the side opposite to the side SA1 of the first heating element 31, and the side opposite to the side SA2 of the second heating element 32. The center of the region AR is, for example, the position where the center line of the first region side ASD1 and the second region side ASD2 passes, and may be substantially at the center of the region AR. The first region side ASD1 is a region side of the outer shape of the region AR and is the side of the region sides parallel to the Y direction that is closer to the side of the opposing integrated circuit device 20. The second region side ASD2 is the side opposite to the first region side ASD1 in the outer shape of the region AR.

[0016] FIG. 2 shows the state of the heat distribution in the XY plane after the heating element 30 starts to generate heat when the method of the present embodiment is applied. In FIG. 2, the heat distribution when a certain period of time has elapsed since the heating element 30 started to release heat is simulated and displayed as R1, R2, R3, and R4 in order from the region with the highest temperature. As shown in FIG. 2, R1 where the temperature is the highest is a position closer to the second side SD2 side from the center of the region AR. Therefore, as shown in the first configuration example of FIG. 1, by arranging the temperature sensor 40 on the second side SD2 side rather than the center in the X direction of the region AR, it becomes possible to surely detect the overheated state of the heating element 30.

[0017] Here, in order to quickly detect the overheated state, it is necessary to consider the temporal change of the position where the temperature is highest in the integrated circuit device 20. After the heat generation starts, the position where the temperature first becomes the highest appears at the center of the region AR. Since there is a mold resin outside the second side SD2 and there is no place for heat to escape, after a certain period of time, the position where the temperature is the highest extends to the range from the center of the region AR in the X direction to the second side SD2. Therefore, by limiting the X coordinate of the arrangement position of the temperature sensor 40 to be between the center of the region AR and the first region side ASD1, the overheated state of the heating element 30 can be quickly detected.

[0018] Fig. 3 shows, as one of the basic configuration examples of Fig. 1, a case where the outer shape of the first heating element 31 in a plan view is a square with equal lengths of side SA1 and side SB1, and the outer shape of the second heating element 32 in a plan view is a square with equal lengths of side SA2 and side SB2. Note that the outer shapes of the first heating element 31 and the second heating element 32 may be such that one of them is a square and the other is a rectangle other than a square.

[0019] 2. Detailed Configuration Example of Integrated Circuit Device Fig. 4 shows a detailed first configuration example of the integrated circuit device 20. In Fig. 4, the integrated circuit device 20 includes a heating element 30, a temperature sensor 40 that detects the temperature of the heating element 30, and a control circuit 50.

[0020] The heating element 30 includes a first heating element 31 and a second heating element 32, similar to the basic configuration example described with reference to Figs. 1 and 3. The heating element 30 is composed of a first heating element 31 and a second heating element 32 that are arranged side by side along the Y direction with the region AR in between. The first heating element 31 and the second heating element 32 are arranged at a predetermined distance apart along the Y direction. The outer shape of the first heating element 31 has a long side LS1 and a short side SS1. Also, the outer shape of the second heating element 32 has a long side LS2 and a short side SS2. Similar to the basic configuration example described with reference to Figs. 1 and 3, the outer shape of each of the first heating element 31 and the second heating element 32 only needs to have at least a long side and a short side, and may be an outer shape of a polygon other than a rectangle.

[0021] The first heating element 31 and the second heating element 32 are electrically connected in parallel, and the current flowing through the first heating element 31 and the second heating element 32 connected in parallel is controlled by the output signal of the control circuit 50. For example, when a first current flows through the first heating element 31 and a second current flows through the second heating element 32, a current obtained by adding the first current and the second current flows through the heating element 30.

[0022] The arrangement position of the temperature sensor 40 is the same as the basic configuration example described with reference to FIG. 1. That is, the temperature sensor 40 is arranged at a position where the position in the X direction is between the center of the region AR and the second side SD2, and the position in the Y direction is between the first heating element 31 and the second heating element 32.

[0023] The control circuit 50 is a circuit that controls the flow of current through the heating element 30. The control circuit 50 is realized by, for example, a logic circuit or the like. For example, when the heating element 30 is a MOS transistor, the control circuit 50 controls the current flowing through the MOS transistor serving as the heating element 30 by controlling the gate of the MOS transistor. When the heating element 30 is a bipolar transistor, the control circuit 50 controls the collector current flowing through the bipolar transistor by, for example, controlling the base-emitter voltage of the bipolar transistor. When the heating element 30 is a resistance element, the control circuit 50 controls the current flowing through the resistance element by controlling the voltage applied to the resistance element or by controlling the current source connected to the resistance element.

[0024] In the first configuration example, the effects obtained by forming the first heating element 31 and the second heating element 32 into rectangles each having a long side and a short side will be described. FIG. 5 is a schematic diagram showing the heat diffusion indicated by arrows in a simplified structure in which the heating element 30 is not divided into the first heating element 31 and the second heating element 32 and the outer shape is a square. Considering the relationship between the outer shape of the heating element 30 and the heat released from the heating element 30, the larger the outer periphery of the outer shape of the heating element 30 in a plan view of the heating element 30, the larger the area where the heating element 30 contacts the outside. Specifically, when there are heating elements 30 having the same area in a plan view, in the order of a circle, a square, and a rectangle, the outer periphery of the outer shape becomes longer, and the area where the heating element 30 contacts the outside also becomes larger. That is, when considering heating elements 30 having the same area in a plan view, the heat dissipation to the outside improves in the order of a circle, a square, and a rectangle. Generally, the outer shape of the region of the element formed on the semiconductor chip is rectangular. For this reason, when the outer shape of the heating element 30 is a square, the area in contact with the outside becomes smaller than when it is a rectangle, and heat easily stays inside the heating element 30.

[0025] For example, in the example of FIG. 5 to which the method of the present embodiment is not applied, the outer shape of the heating element 30 in a plan view does not have a long side and a short side, and specifically, it is a square. In this case, as shown by the arrow inside the heating element 30 in FIG. 5, part of the heat generated in the heating element 30 stays inside the heating element 30. On the other hand, in the example of FIG. 6 to which the method of the present embodiment is applied, the outer shape of the heating element 30 has a long side LS and a short side SS, and specifically, it is a rectangle. For this reason, as compared with the case where the outer shape of the heating element 30 is a square as shown in FIG. 5, the area where the heating element 30 contacts the outside increases by the length of the outer periphery, and heat easily diffuses to the outside through the long side LS. Therefore, the heat staying inside the heating element 30 is reduced, and it is possible to avoid a problem occurring in the element due to an overheated state.

[0026] When the length of the long side LS is set to be approximately twice or more the length of the short side SS, a remarkable improvement in the heat dissipation property of the heating element 30 appears. For this reason, in the present embodiment, it is desirable that the length of the long side LS of the heating element 30 is twice or more the length of the short side SS.

[0027] In the above, as a method of enhancing the heat dissipation property of the heating element 30, it has been described that the long side is made longer than the short side, and preferably, the long side is made approximately twice or more the short side. Here, even when the heating element 30 is divided into a first heating element 31 and a second heating element 32, similarly, the area where the heating element 30 contacts the outside is increased, and there is an effect of enhancing the heat dissipation property. Therefore, in order to enhance the heat dissipation property of the heating element 30, the heating element 30 may be divided into three or more pieces.

[0028] FIG. 7 shows a detailed second configuration example of the integrated circuit device 20. The integrated circuit device 20 shown in the second configuration example is a case where, in the basic configuration example of the integrated circuit device 20 shown in FIG. 1 and the like, the first heating element 31 and the second heating element 32 are transistors TR.

[0029] The transistor TR is, for example, a MOS transistor. Here, the MOS transistor may be an N-type MOS transistor or a P-type MOS transistor. The transistor TR is controlled by the control circuit 50, and a current flows between the drain D and the source S, and heat is generated by the flow of this current.

[0030] The transistor TR is composed of a first transistor TR1 and a second transistor TR2. Specifically, the transistor TR is composed of a first transistor TR1 and a second transistor TR2 arranged side by side along the Y direction with the region AR sandwiched therebetween. The first transistor TR1 and the second transistor TR2 are arranged at a predetermined distance apart along the Y direction. The outer shape of the first transistor TR1 has a long side LS1 and a short side SS1. Also, the outer shape of the second transistor TR2 has a long side LS2 and a short side SS2. In the first transistor TR1, the long side LS1 is desirably at least twice the short side SS1. Also in the second transistor TR2, the long side LS2 is desirably at least twice the short side SS2. Further, the gates G1 of the first transistor TR1 and G2 of the second transistor TR2 are arranged such that their longitudinal directions are, for example, in a direction along the X direction.

[0031] The first transistor TR1 and the second transistor TR2 are each electrically connected to a control circuit 50. The output signal of the control circuit 50 is input to the gate G1 of the first transistor TR1 and the gate G2 of the second transistor TR2, respectively. The sources S1 of the first transistor TR1 and S2 of the second transistor TR2 are each connected to, for example, a ground node. The drains D1 of the first transistor TR1 and D2 of the second transistor TR2 are connected to, for example, a power supply voltage node. The well of the transistor TR is connected to, for example, a ground node.

[0032] When the voltage of the output signal of the control circuit 50 is greater than the threshold voltage, a current flows from the drain D to the source S of the transistor TR.

[0033] The first transistor TR1 and the second transistor TR2 are electrically connected in parallel. For example, the sources of the first transistor TR1 and the second transistor TR2 are connected to each other, and their drains are also connected to each other. The first transistor TR1 and the second transistor TR2 are controlled by the output signal of the control circuit 50.

[0034] The temperature sensor 40 is provided to detect the temperature of the first transistor TR1, the second transistor TR2, and their surroundings. The temperature sensor 40 is arranged at a position where the position in the X direction is between the center of the region AR and the second side SD2, and the position in the Y direction is between the first transistor TR1 and the second transistor TR2.

[0035] Here, the region AR is a region existing between the first transistor TR1 and the second transistor TR2, and is a region surrounded by the first region side ASD1, the second region side ASD2, the side opposite to the long side LS1 of the first transistor TR1, and the side opposite to the long side LS2 of the second transistor TR2. The first region side ASD1 is a side of the outer shape of the region AR, and among the sides parallel to the Y direction, it is the side with the shorter distance from the side of the opposing integrated circuit device 20. The second region side ASD2 is the side opposite to the first region side ASD1 in the outer shape of the region AR.

[0036] The state of the heat distribution in the XY plane after the transistor TR starts to generate heat can be considered by replacing the first heating element 31 and the second heating element 32 with the first transistor TR1 and the second transistor TR2, respectively, in FIG. 2. That is, in the second configuration example, to detect the overheated state of the transistor TR, it is necessary to arrange the temperature sensor 40 at least on the side of the second side SD2 from the center in the X direction of the region AR. To quickly detect the overheated state of the transistor TR, it is desirable to arrange the temperature sensor 40 between the center of the long side LS in the X direction and the first region side ASD1 in the region AR.

[0037] The transistor TR is used, for example, to charge or discharge a load 300 described later. For this reason, it is assumed that the amount of current flowing through the transistor TR is large, and the accompanying heat generation is also large. Therefore, when the transistor TR is provided as the heating element 30, by setting the shape of the transistor TR as in the second configuration example, it is possible to prevent the occurrence of heat bias inside the integrated circuit device 20.

[0038] FIG. 8 shows a detailed third configuration example of the integrated circuit device 20. The integrated circuit device 20 according to the third configuration example is a case where the first transistor TR1 and the second transistor TR2 in the second configuration example are each a plurality of unit transistors.

[0039] For example, the first transistor TR1 is composed of a plurality of unit transistors provided in parallel between the drain and the source. And, for example, the plurality of unit transistors are arranged side by side in the X direction so that the longitudinal direction of the gate G of each unit transistor is parallel to the Y direction. In this case, the source of each unit transistor is a common source S with the source of the adjacent unit transistor. Also, the drain of each unit transistor is a common drain D with the drain of the adjacent unit transistor. Note that the arrangement and configuration of the unit transistors are not limited to the above.

[0040] As described above, in the integrated circuit device 20, when the outer shape of the heating element 30 in a plan view is rectangular, compared with the case of FIG. 5 where the outer shape of the heating element 30 is square, since the length of the outer periphery of the heating element 30 becomes longer, the heat dissipation of the heating element 30 can be improved. This effect is similarly obtained in the second configuration example of FIG. 7 and the third configuration example of FIG. 8.

[0041] As in the third configuration example of FIG. 8, by configuring the transistor TR with a plurality of unit transistors, it becomes possible to increase the current amount of the transistor TR per unit area compared to the second configuration example of FIG. 7. That is, the current supply ability can be improved. And when the current amount increases in this way, the heat generation amount per unit area also increases. Therefore, when the transistor TR is configured with a plurality of unit transistors, if the arrangement direction and shape of the unit transistors are set as in the third configuration example, it becomes possible to effectively prevent the generation of heat bias inside the integrated circuit device 20. Also, by configuring the transistor TR with a plurality of unit transistors, the gate width W of each unit transistor can be shortened, and reliability improvement and the like can be achieved.

[0042] FIG. 9 shows a detailed fourth configuration example of the integrated circuit device 20. In the integrated circuit device 20 of the fourth configuration example, in the integrated circuit devices 20 of the first to third configuration examples, dummy metal wiring or dummy pads are provided on the upper layer of the heating element 30 or the transistor TR. Note that 120 in FIG. 9 represents a terminal and corresponds to the PIN in FIG. 2.

[0043] The metal wiring 110 is provided as a dummy. The metal wiring 110 can be realized by a metal such as aluminum or an aluminum alloy, but is not limited thereto. The metal wiring 110 is realized by a method of forming a wiring pattern by etching after forming a solid metal film, a method of embedding a metal after processing the base of the wiring pattern, or the like. Note that the metal wiring 110 may be used for applications such as actual circuit driving.

[0044] The pad 108 is provided as a dummy. The pad 108 can be realized by a metal such as aluminum or an aluminum alloy, but is not limited thereto. The pad 108 is realized by a method of forming a wiring pattern by etching after forming a solid metal film, a method of embedding a metal after processing the base of the wiring pattern, or the like. Note that the pad 108 may be used for applications such as actual circuit driving.

[0045] FIG. 9 is a schematic view of the integrated circuit device 20 in FIG. 1, for example, as seen from a cross section in the X-Z plane. In the +Z direction when viewed from the heating element 30, there are insulating films such as metal wiring, polycrystalline silicon doped with impurities, and silicon oxide. In the -Z direction when viewed from the heating element 30, there is basically single-crystalline silicon doped with impurities.

[0046] The insulating film such as silicon oxide in the +Z direction when viewed from the heating element 30 generally has a lower thermal conductivity than metal wiring and polycrystalline silicon. Therefore, in a structure without metal wiring in the +Z direction as shown in FIG. 10 as a comparative example of the fourth configuration example, heat from the heating element 30 or the transistor TR will accumulate. For this reason, by arranging metal wiring and pads with high thermal conductivity as in the fourth configuration example shown in FIG. 9, the situation where heat accumulates in the +Z direction can be eliminated.

[0047] FIG. 11 is a diagram showing a specific circuit configuration example of the integrated circuit device 20 and the electronic device 10 including the integrated circuit device 20. The electronic device 10 includes an external transistor 11, a load 300, and the integrated circuit device 20. Hereinafter, an example in which the external transistor 11 is an N-type transistor will be mainly described, but it is not limited thereto, and the external transistor 11 may be a P-type transistor.

[0048] The electronic device 10 may be, for example, a printing device, a video projection device, a wearable device, an information processing device, a display device, a television receiver, or a portable information terminal, etc., but is not limited thereto, and may be various devices using a DC power supply voltage VCC.

[0049] The external transistor 11 is provided between the power supply node NVCC and the load 300. Specifically, the drain of the external transistor 11 is connected to the power supply node NVCC, and the source is connected to the node NLOAD of the load 300. The external transistor 11 is a so-called power transistor, and when it is on, it supplies the power supply voltage VCC to the load 300, and when it is off, it cuts off the supply of the power supply voltage VCC to the load 300.

[0050] A power supply voltage VCC is supplied to the power supply node NVCC from a DC power supply. The DC power supply is, for example, an AC-DC converter, a DC-DC converter, or a battery. Although not shown in FIG. 11, these DC power supplies may be included in the electronic device 10.

[0051] The load 300 is a circuit that operates by the power supply voltage VCC supplied to the node NLOAD via the external transistor 11. The node NLOAD is the power supply node of the load 300. The load 300 is, for example, a power supply stabilizing capacitor provided between the node NLOAD and the ground voltage GND, a processing device that executes processing in the electronic device 10, or a motor driver that drives a motor. Note that the load 300 is not limited to these, and may be a circuit for realizing various functions in the electronic device 10.

[0052] The integrated circuit device 20 controls the supply of the power supply voltage VCC to the load 300 by outputting a gate control voltage DRV to the gate of the external transistor 11. The integrated circuit device 20 includes a regulator 165, a charge pump circuit 200, a charging circuit 180, a discharging circuit 190, and terminals TCHP1, TCHP, TVCC, TDRV, TVCO, and TDIS. The integrated circuit device 20 is, for example, an integrated circuit device in which a plurality of circuit elements are integrated on a semiconductor substrate. Each terminal is, for example, a pad of the integrated circuit device or a terminal of a package that houses the integrated circuit device.

[0053] The regulator 165 outputs a regulated voltage VRG by regulating the power supply voltage VCC from the power supply node NVCC. The terminal TVCC is connected to the power supply node NVCC, and the power supply voltage VCC is supplied to the regulator 165 via the terminal TVCC. The regulator 165 is a step-down regulator that outputs a regulated voltage VRG lower than the power supply voltage VCC. The regulator 165 is, for example, a linear regulator, but is not limited thereto and may be various types of DC-DC converters.

[0054] The charge pump circuit 200 performs boosting based on the regulated voltage VRG with reference to the source voltage VCO of the external transistor 11, and outputs a gate control voltage DRV = VCO + VRG that is higher than the source voltage VCO. Thereby, when the charge pump circuit 200 is operating, the external transistor 11 is turned on, so that the power supply voltage VCC is supplied to the load 300 via the external transistor 11.

[0055] Specifically, one end of the boosting capacitor 12 is connected to the terminal TCHP1, the other end of the boosting capacitor 12 is connected to the terminal TCHP2, and the gate of the external transistor 11 is connected to the terminal TDRV. The charge pump circuit 200 includes a drive circuit 160 and a gate control circuit 170. The drive circuit 160 outputs a drive signal CHP1 to one end of the boosting capacitor 12 based on the regulated voltage VRG. A signal CHP2 from the other end of the boosting capacitor 12 is input to the gate control circuit 170. The gate control circuit 170 outputs a gate control voltage DRV = VCO + VRG based on the signal CHP2 and the source voltage VCO of the external transistor 11. The gate control voltage DRV is output to the gate of the external transistor 11 via the terminal TDRV.

[0056] When the external transistor 11 is a P-type transistor, the source voltage of the external transistor 11 is the power supply voltage VCC. The charge pump circuit 200 may perform bucking based on the regulated voltage VRG with reference to the power supply voltage VCC, and output a gate control voltage DRV = VCC - VRG that is lower than the power supply voltage VCC.

[0057] The transistor 189 is provided between the power supply node NVCC and the node NLOAD. Specifically, the transistor 189 is a P-type transistor, with its source connected to TVCC and its drain connected to the terminal TVCO. The terminal TVCO is a terminal connected to the source of the external transistor 11 and the node NLOAD. Although FIG. 11 illustrates an example where the transistor 189 is a P-type transistor, the transistor 189 may be an N-type transistor. Also, the transistor 189 in FIG. 11 corresponds to the charging transistor TRC in FIGS. 12 and 13 described later.

[0058] The temperature sensor 188 detects the temperature of the transistor 189 and outputs a temperature detection voltage VTA whose voltage value changes according to the detected temperature. The temperature sensor 188 is arranged in the vicinity of the transistor 189 so as to be able to detect the temperature of the transistor 189. The temperature sensor 188 is, for example, a temperature sensor that utilizes the temperature dependence of the forward voltage of a PN junction, but is not limited thereto and may be various types of temperature sensors.

[0059] The control circuit 185 controls the transistor current by controlling the gate voltage GTA of the transistor 189. The transistor current in the charging circuit 180 is the current flowing through the transistor 189. The control circuit 185 controls the transistor current based on the temperature detection voltage VTA to prevent a failure due to heat generation of the transistor 189. Also, the control circuit 185 performs control to allow the transistor current to flow as much as possible within a range where the transistor 189 can be maintained below the allowable temperature.

[0060] The discharge circuit 190 discharges from the capacitance of the node NLOAD of the load 300 after the external transistor 11 is turned off. Thereby, it is possible to prevent problems caused by the voltage held in the capacitance of the node NLOAD or the charge accumulated in the capacitance of the node NLOAD after the external transistor 11 is turned off. The discharge circuit 190 includes a transistor 199, a temperature sensor 198, and a control circuit 195.

[0061] Transistor 199 is provided between node NLOAD and the ground node. Specifically, transistor 199 is an N-type transistor, with its source connected to the ground node and its drain connected to terminal TDIS. Terminal TDIS is a terminal connected to node NLOAD of load 300. Note that transistor 199 in FIG. 11 corresponds to discharge transistor TRD in FIGS. 12 and 13 described later.

[0062] Temperature sensor 198 detects the temperature of transistor 199 and outputs a temperature detection voltage VTB whose voltage value changes according to the detected temperature. Temperature sensor 198 is arranged in the vicinity of transistor 199 so as to be able to detect the temperature of transistor 199. Temperature sensor 198 is, for example, a temperature sensor that utilizes the temperature dependence of the forward voltage of a PN junction, but is not limited thereto and may be various types of temperature sensors. Note that temperature sensors 188 and 198 in FIG. 11 correspond to temperature sensor 40 in FIGS. 1, 2, 3, 4, 7, 8, the first temperature sensor 41 and the second temperature sensor 42 in FIGS. 12 and 13 described later.

[0063] Control circuit 195 controls the gate voltage GTB of transistor 199 to control the transistor current. The transistor current in discharge circuit 190 is the current flowing through transistor 199. Control circuit 195 controls the transistor current based on temperature detection voltage VTB to prevent failures due to heat generation of transistor 199. Further, control circuit 195 performs control to allow the transistor current to flow as much as possible within the range where transistor 199 can be maintained below the allowable temperature. Details of this control will be described later. Note that control circuits 185 and 195 in FIG. 11 correspond to control circuit 50 in FIGS. 4, 7, 8, and FIGS. 12 and 13 described later.

[0064] FIG. 12 shows a detailed fifth configuration example of the integrated circuit device 20. FIG. 12 corresponds to the configuration example of FIG. 11. The integrated circuit device 20 includes a charging transistor TRC, a discharging transistor TRD, a first temperature sensor 41, a second temperature sensor 42, and a control circuit 50.

[0065] The charging transistor TRC, for example, passes a current to charge the load 300. Heat is generated when a current flows through the charging transistor TRC. The charging transistor TRC includes a first charging transistor TRC1 and a second charging transistor TRC2.

[0066] Specifically, the charging transistor TRC includes a first charging transistor TRC1 and a second charging transistor TRC2 arranged side by side along the Y direction with the first charging transistor TRC1 interposed therebetween in the first region AR1. The first charging transistor TRC1 and the second charging transistor TRC2 are arranged at a predetermined distance apart along the Y direction. The outer shape of the first charging transistor TRC1 has sides SAC1 and SBC1. Also, the outer shape of the second charging transistor TRC2 has sides SAC2 and SBC2.

[0067] The first charging transistor TRC1 and the second charging transistor TRC2 are realized by, for example, P-type or N-type MOS transistors. Each of the first charging transistor TRC1 and the second charging transistor TRC2 is composed of a plurality of unit transistors arranged such that the longitudinal direction of the gates G1 and G2 of each unit transistor is along the Y direction, for example.

[0068] The first charging transistor TRC1 and the second charging transistor TRC2 are, for example, electrically connected in parallel. The output signal of the control circuit 50 is input to the gate G1 of the first charging transistor TRC1 and the gate G2 of the second charging transistor TRC2. The source S1 of the first charging transistor TRC1 and the source S2 of the second charging transistor TRC2 are connected to, for example, the ground node. The drain D1 of the first charging transistor TRC1 and the drain D2 of the second charging transistor TRC2 are connected to, for example, the power supply voltage node.

[0069] The discharge transistor TRD, for example, allows a current to flow in order to discharge from the load 300. Heat is generated when a current flows through the discharge transistor TRD. The discharge transistor TRD includes a first discharge transistor TRD1 and a second discharge transistor TRD2.

[0070] Specifically, the discharge transistor TRD includes a first discharge transistor TRD1 and a second discharge transistor TRD2 arranged side by side along the Y direction with the first discharge transistor TRD1 sandwiching the second region AR2. The first discharge transistor TRD1 and the second discharge transistor TRD2 are arranged at a predetermined distance apart along the Y direction. The outer shape of the first discharge transistor TRD1 has sides SAD1 and SBD1. Also, the outer shape of the second discharge transistor TRD2 has sides SAD2 and SBD2.

[0071] The first discharge transistor TRD1 and the second discharge transistor TRD2 are realized, for example, by P-type or N-type MOS transistors. Each of the first discharge transistor TRD1 and the second discharge transistor TRD2 is composed of a plurality of unit transistors arranged such that the longitudinal directions of the gates G3 and G4 of each unit transistor are, for example, along the Y direction.

[0072] The first discharge transistor TRD1 and the second discharge transistor TRD2 are, for example, electrically connected in parallel. The output signal of the control circuit 50 is input to the gate G3 of the first discharge transistor TRD1 and the gate G4 of the second discharge transistor TRD2. The source S3 of the first discharge transistor TRD1 and the source S4 of the second discharge transistor TRD2 are connected to, for example, the ground node. The drain D3 of the first discharge transistor TRD1 and the drain D4 of the second discharge transistor TRD2 are connected to, for example, the power supply voltage node.

[0073] The first temperature sensor 41 and the second temperature sensor 42 correspond to the temperature sensor 40 described in FIGS. 1 to 4, FIGS. 7 and 8, and are sensor circuits for detecting temperature. The first temperature sensor 41 is provided to detect the temperature of the first charging transistor TRC1, the second charging transistor TRC2, and their surroundings.

[0074] The position of the first temperature sensor 41 in the X direction is a position between the center of the first region AR1 and the second side SD2, and the position in the Y direction is arranged between the first charging transistor TRC1 and the second charging transistor TRC2.

[0075] Specifically, the outer shape of the first region AR1 between the first charging transistor TRC1 and the second charging transistor TRC2 has a first region side ASDC1 close to the second side SD2 and a second region side ASDC2 farther from the second side SD2 than the first region side ASDC1. And the first temperature sensor 41 is arranged between the center of the first region AR1 and the first region side ASDC1.

[0076] Here, the first region AR1 is the region existing between the first charging transistor TRC1 and the second charging transistor TRC2. The first region side ASDC1 is a side of the outer shape of the first region AR1 and is the side with a shorter distance from the side of the opposing integrated circuit device 20 among the sides parallel to the Y direction. The second region side ASDC2 is the opposite side of the first region side ASDC1 in the outer shape of the first region AR1.

[0077] The second temperature sensor 42 is provided to detect the temperature of the first discharge transistor TRD1, the second discharge transistor TRD2, and their surroundings. The position of the second temperature sensor 42 in the X direction is between the center of the second region AR2 and the second side SD2, and the position in the Y direction is arranged between the first discharge transistor TRD1 and the second discharge transistor TRD2.

[0078] Specifically, the outer shape of the second region AR2 between the first discharge transistor TRD1 and the second discharge transistor TRD2 has a third region side ASDD1 close to the second side SD2 and a fourth region side ASDD2 farther from the second side SD2 than the third region side ASDD1. And the second temperature sensor 42 is arranged between the center of the second region AR2 and the third region side ASDD1.

[0079] Here, the second region AR2 is the region existing between the first discharge transistor TRD1 and the second discharge transistor TRD2. The third region side ASDD1 is a side of the outer shape of the second region AR2 and is the side with a shorter distance from the side of the opposing integrated circuit device 20 among the sides parallel to the Y direction. The fourth region side ASDD2 is the opposite side of the third region side ASDD1 in the outer shape of the second region AR2.

[0080] The control circuit 50 is, for example, a circuit that controls the flow of current to the charging transistor TRC and the discharge transistor TRD. The control circuit 50 is realized by, for example, a logic circuit or the like. The control circuit 50 controls the current flowing through the charging transistor TRC and the discharge transistor TRD by controlling the gates of the charging transistor TRC and the discharge transistor TRD, which are MOS transistors.

[0081] Regarding the positions where the temperature is highest in the charging transistor TRC and the discharging transistor TRD, there is no difference from the case of the basic configuration example of the integrated circuit device 20. That is, in the charging transistor TRC, the position where the temperature is highest appears at the center of the first region AR1 after the start of heat generation, and as time passes, it extends to the range from the center of the first region AR1 to the second side SD2. Therefore, by arranging the position of the first temperature sensor 41 in the X direction between the center of the first region AR1 and the second side, the overheat state can be reliably detected.

[0082] Also, if the position of the first temperature sensor 41 in the X direction is limited to the range between the center of the first region AR1 and the side ASDC1 of the first region, the overheat state can be detected at an early stage, and the deterioration or malfunction of the peripheral elements including the charging transistor TRC can be avoided.

[0083] Similarly, in the discharging transistor TRD, by arranging the position of the second temperature sensor 42 in the X direction between the center of the second region AR2 and the second side SD2, the overheat state can be reliably detected. Also, if the position of the second temperature sensor 42 in the X direction is limited to the range between the center of the second region AR2 and the side ASDD1 of the third region, the overheat state can be detected at an early stage, and the deterioration or malfunction of the peripheral elements including the discharging transistor TRD can be avoided.

[0084] Also, as shown in FIG. 12, the outer shape of the integrated circuit device 20 has a first side SD1 and a third side SD3 that is opposite to the first side SD1, and the charging transistor TRC is arranged between the first side SD1 and the center line between the first side SD1 and the third side SD3. And the discharging transistor TRD is arranged between the third side SD3 and the center line. For example, in FIG. 12, the center line between the first side SD1 and the third side SD3 is represented by a dotted line along the X direction. This center line is, for example, a line parallel to the first side SD1 and the third side SD3.

[0085] In this way, the charging transistor TRC is arranged in the first arrangement region on the first side SD1 side of the center line, and the discharging transistor TRD is arranged in the second arrangement region on the third side SD3 side of the center line. As a result, it becomes possible to efficiently layout and arrange the charging transistor TRC and the discharging transistor TRD, which are heat generation sources, in the first arrangement region and the second arrangement region of the integrated circuit device 20 while increasing the distance therebetween. By increasing the distance between the charging transistor TRC and the discharging transistor TRD, for example, it is possible to suppress the influence of the heat generated by the discharging transistor TRD on the temperature detection result of the first temperature sensor 41 of the charging transistor TRC. Also, it is possible to suppress the influence of the heat generated by the charging transistor TRC on the temperature detection result of the second temperature sensor 42 of the discharging transistor TRD. Therefore, the first temperature sensor 41 and the second temperature sensor 42 can more appropriately detect the heat generated by the charging transistor TRC and the discharging transistor TRD.

[0086] FIG. 13 shows a detailed sixth configuration example of the integrated circuit device 20. In FIG. 13, the integrated circuit device 20 includes a charging transistor TRC, a discharging transistor TRD, a first temperature sensor 41, a second temperature sensor 42, a control circuit 50, a first pad PVCO, a second pad PVCC, a third pad PDIS, and a fourth pad PGND.

[0087] The first pad PVCO, the second pad PVCC, the third pad PDIS, and the fourth pad PGND are terminals of the integrated circuit device 20. The first pad PVCO, the second pad PVCC, the third pad PDIS, and the fourth pad PGND are formed of, for example, a metal layer. For example, in the pad region, the metal layer is exposed from the passivation film, which is an insulating layer, and the above pads of the integrated circuit device 20 are formed by this exposed metal layer.

[0088] The first pad PVCO is a pad for connection to the load 300. That is, the first pad PVCO is a pad for connecting the charging transistor TRC and the load 300, and corresponds to the terminal TVCO in FIG. 11. For example, the drain of the charging transistor TRC, which is a P-type transistor, is connected to the first pad PVCO. Thereby, the drain of the charging transistor TRC is connected to the load 300 via the first pad PVCO. Note that the drain of the charging transistor TRC is the drain of the first charging transistor TRC1 and the second charging transistor TRC2.

[0089] The second pad PVCC is a pad for connection to the first power supply. The first power supply is, for example, the power supply on the high potential side and is the power supply of the power supply voltage VCC in FIG. 11. That is, the second pad PVCC is a pad for connecting the charging transistor TRC and the first power supply VCC, and corresponds to the terminal TVCC in FIG. 11. For example, the source of the charging transistor TRC, which is a P-type transistor, is connected to the second pad PVCC. Thereby, the source of the charging transistor TRC is connected to the first power supply VCC via the second pad PVCC. Note that the source of the charging transistor TRC is the source of the first charging transistor TRC1 and the second charging transistor TRC2.

[0090] The third pad PDIS is a pad for connection to the load 300. That is, the third pad PDIS is a pad for connecting the discharge transistor TRD and the load 300, and corresponds to the terminal TDIS in FIG. 11. For example, the drain of the discharge transistor TRD, which is an N-type transistor, is connected to the third pad PDIS. Thereby, the drain of the discharge transistor TRD is connected to the load 300 via the third pad PDIS. Note that the drain of the discharge transistor TRD is the drain of the first discharge transistor TRD1 and the second discharge transistor TRD2.

[0091] The fourth pad PGND is a pad for connection to the second power supply. The second power supply is, for example, a power supply on the low potential side and is the power supply of the ground voltage GND in FIG. 11. GND is also called VSS. That is, the fourth pad PGND is a pad for connecting the discharge transistor TRD and the second power supply GND. For example, the source of the discharge transistor TRD, which is an N-type transistor, is connected to the fourth pad PGND. As a result, the source of the discharge transistor TRD is connected to GND via the fourth pad PGND. Note that the source of the discharge transistor TRD is the source of the first discharge transistor TRD1 and the second discharge transistor TRD2.

[0092] And in this embodiment, as shown in FIG. 13, in the region of the charging transistor TRC, a first pad PVCO for connection to the load 300 and a second pad PVCC for connection to the first power supply VCC are provided. That is, the first pad PVCO and the second pad PVCC are arranged so as to overlap the charging transistor TRC in a plan view. Specifically, the first pad PVCO is arranged so as to overlap the second charging transistor TRC2 in a plan view, and the second pad PVCC is arranged so as to overlap the first charging transistor TRC1 in a plan view. Also, in the region of the discharge transistor TRD, a third pad PDIS for connection to the load 300 and a fourth pad PGND for connection to the second power supply GND are provided. That is, the third pad PDIS and the fourth pad PGND are arranged so as to overlap the discharge transistor TRD in a plan view. Specifically, the third pad PDIS is arranged so as to overlap the first discharge transistor TRD1 in a plan view, and the fourth pad PGND is arranged so as to overlap the second discharge transistor TRD2 in a plan view.

[0093] By doing so, as described with reference to FIG. 9, it becomes possible to dissipate the heat generated by the charging transistor TRC to the outside through the heat dissipation path via the first pad PVCO and the second pad PVCC, and the situation where heat accumulates can be eliminated. Also, it becomes possible to dissipate the heat generated by the discharge transistor TRD to the outside through the heat dissipation path via the third pad PDIS and the fourth pad PGND, and the situation where heat accumulates can be eliminated. Further, by arranging the charging transistor TRC so as to overlap with the first pad PVCO and the second pad PVCC, it becomes possible to connect between the charging transistor TRC, the load 300, and VCC through a short-path route, and it is possible to suppress a decrease in charging efficiency or the like due to the parasitic resistance in the route. Also, by arranging the discharge transistor TRD so as to overlap with the third pad PDIS and the fourth pad PGND, it becomes possible to connect between the discharge transistor TRD, the load 300, and GND through a short-path route, and it is possible to suppress a decrease in heat dissipation efficiency or the like due to the parasitic resistance in the route.

[0094] As described above, the integrated circuit device of the present embodiment includes a heat generating body and a temperature sensor that detects the temperature of the heat generating body. The outer shape of the integrated circuit device has a first side and a second side intersecting the first side. When the direction along the first side of the integrated circuit device is defined as the X direction and the direction along the second side is defined as the Y direction, the heat generating body is composed of a first heat generating body and a second heat generating body arranged side by side along the Y direction with a region interposed therebetween. The temperature sensor is positioned in the X direction between the center of the region and the second side. And the temperature sensor is arranged at an arrangement position where the position in the Y direction is between the first heat generating body and the second heat generating body.

[0095] According to the present embodiment, since the temperature sensor is arranged at a position closer to the second side than the center of the region which is the position where the temperature becomes the highest, it becomes possible to surely detect an overheat state and prevent the occurrence of problems due to overheating of the heat generating body.

[0096] In this embodiment, the outer shape of the region between the first heating element and the second heating element has, for example, a first region side close to the second side and a second region side farther from the second side than the first region side, and the temperature sensor may be disposed between the center of the region and the first region side.

[0097] In this way, since the position where the temperature becomes the highest changes from the center of the region toward the second side over time, by disposing the temperature sensor between the center of the region and the first region side, an overheat state can be detected at an early stage, and the occurrence of problems due to overheating of the heating element can be prevented.

[0098] In this embodiment, the outer shape of the first heating element may have a first short side and a first long side. The outer shape of the second heating element may have a second short side and a second long side.

[0099] In this way, by forming the outer shape of the heating element into a shape having a long side and a short side, the area where the heating element contacts the outside increases, and heat dissipation performance is improved.

[0100] In this embodiment, the length of the first long side of the first heating element may be two times or more the length of the first short side. The length of the second long side of the second heating element may be two times or more the length of the second short side.

[0101] In this way, if the ratio of the length of the long side to the length of the short side of the outer shape of the heating element is generally two or more, the effect of improving the heat dissipation performance of the heating element becomes remarkable.

[0102] In this embodiment, including a control circuit, the first heating element may be a first transistor whose gate voltage is controlled by the control circuit, and the second heating element may be a second transistor whose gate voltage is controlled by the control circuit and is connected in parallel with the first transistor.

[0103] For example, a large current flows through a transistor used for charging or discharging a load, and it is assumed that a large amount of heat is generated accordingly. Therefore, according to the present embodiment, even when a transistor with a large heat generation amount is used, an overheat state can be surely detected.

[0104] Also, in the present embodiment, each of the first transistor and the second transistor may be composed of a plurality of unit transistors in which the longitudinal direction of the gate of each unit transistor is along the Y direction.

[0105] When a transistor is composed of a plurality of unit transistors, the gate width of each unit transistor can be shortened, and the reliability of the transistor can be improved. On the other hand, although the heat generation amount per unit area increases, according to the present embodiment, an overheat state can be efficiently detected.

[0106] The integrated circuit device of this embodiment also includes a charging transistor that charges a load, a discharging transistor that discharges the load, a control circuit that controls the current flowing through the charging transistor and the current flowing through the discharging transistor, a first temperature sensor that detects the temperature of the charging transistor, and a second temperature sensor that detects the temperature of the discharging transistor. The outer shape of the integrated circuit device has a first side and a second side that intersects the first side. When the direction along the first side of the integrated circuit device is defined as the X direction and the direction along the second side is defined as the Y direction, the charging transistor is composed of a first charging transistor and a second charging transistor that are arranged side by side along the Y direction with the first charging transistor sandwiching a first region. The discharging transistor is composed of a first discharging transistor and a second discharging transistor that are arranged side by side along the Y direction with the first discharging transistor sandwiching a second region. The first temperature sensor is arranged at a first arrangement position where the position in the X direction is between the center of the first region and the second side and the position in the Y direction is between the first charging transistor and the second charging transistor. The second temperature sensor is arranged at a second arrangement position where the position in the X direction is between the center of the second region and the second side and the position in the Y direction is between the first discharging transistor and the second discharging transistor.

[0107] In the charging transistor, the position where the temperature becomes the highest appears at the center of the first region after the start of heat generation, and as time passes, it extends to the range from the center of the first region to the second side. Therefore, according to this embodiment, an overheat state can be surely detected. Also in the discharging transistor, the position where the temperature becomes the highest appears at the center of the second region after the start of heat generation, and as time passes, it extends to the range from the center of the second region to the second side. Therefore, according to this embodiment, an overheat state can be surely detected.

[0108] Also, in this embodiment, the outer shape of the first region between the first charging transistor and the second charging transistor may have a first region side close to the second side and a second region side farther from the second side than the first region side. The outer shape of the second region between the first discharging transistor and the second discharging transistor may have a third region side close to the second side and a fourth region side farther from the second side than the third region side. The first temperature sensor may be disposed between the center of the first region and the first region side. The second temperature sensor may be disposed between the center of the second region and the third region side.

[0109] In this way, for the charging transistor, an overheating state can be detected at an early stage, and a decrease in the performance or a malfunction of the peripheral elements including the charging transistor can be avoided. Also, for the discharging transistor, an overheating state can be detected at an early stage, and a decrease in the performance or a malfunction of the peripheral elements including the discharging transistor can be avoided.

[0110] Also, in this embodiment, the outer shape of the integrated circuit device may have a third side facing the first side. The charging transistor may be disposed between the first side and the center line between the first side and the third side. The discharging transistor may be disposed between the third side and the center line.

[0111] In this way, it becomes possible to efficiently arrange the charging transistor and the discharging transistor, which are heat generation sources, while separating the distance between them.

[0112] Also, in this embodiment, a first pad for connection to a load and a second pad for connection to a first power source may be provided in the region of the charging transistor, and a third pad for connection to a load and a fourth pad for connection to a second power source may be provided in the region of the discharging transistor.

[0113] By doing so, it becomes possible to dissipate the heat generated in the charging transistor to the outside through the heat dissipation path via the first pad and the second pad, and to dissipate the heat generated in the discharging transistor to the outside through the heat dissipation path via the third pad and the fourth pad. Therefore, the situation where heat accumulates can be eliminated.

[0114] Although the present embodiment has been described in detail as above, those skilled in the art will easily understand that many modifications are possible without substantially departing from the novel matters and effects of the present disclosure. Therefore, all such modified examples are intended to be included within the scope of the present disclosure. For example, in the specification or drawings, a term that is described at least once together with a broader or synonymous different term can be replaced with that different term at any location in the specification or drawings. Also, all combinations of the present embodiment and modified examples are included within the scope of the present disclosure. Further, the configurations and operations of the integrated circuit device, heating element, transistor, charging transistor, discharging transistor, control circuit, temperature sensor, etc. are not limited to those described in the present embodiment, and various modified implementations are possible.

Explanation of Reference Numerals

[0115] 10... Electronic device, 11... External transistor, 12... Boost capacitor, 20... Integrated circuit device, 30... Heating element, 31... First heating element, 32... Second heating element, 40... Temperature sensor, 41... First temperature sensor, 42... Second temperature sensor, 50... Control circuit, 108... Pad, 110... Metal wiring, 160... Drive circuit, 165... Regulator, 170... Gate control circuit, 180... Charging circuit, 185... Control circuit, 188... Temperature sensor, 189... Charging transistor, 190... Discharging circuit, 195... Control circuit, 198... Temperature sensor, 199... Discharging transistor, 200... Charge pump circuit, 300... Load, AR... Region, AR1... First region, AR2... Second region, ASD1... First region side, ASD2... Second region side, ASDC1... First region side, ASDC2... Second region side, ASDD1... Third region side, ASDD2... Fourth region side, CHP1... Drive signal, CHP2... Signal, D... Drain, D1... Drain, D2... Drain, D3... Drain, D4... Drain, DRV... Gate control voltage, G... Gate, G1... Gate, G2... Gate, G3... Gate, G4... Gate, GND... Ground voltage, GTA... Gate voltage, GTB... Gate voltage, LS... Long side, LS1... Long side, LS2... Long side, NLOAD... Node of load, NVCC... Power supply node, PVCO... First pad, PVDD... Second pad, PDIS... Third pad, PGND... Fourth pad, S... Source, S1... Source, S2... Source, S3... Source, S4... Source, SA1... Side, SA2... Side, SAC1... Side, SAC2... Side, SAD1... Side, SAD2... Side, SB1... Side, SB2... Side, SBC1... Side, SBC2... Side, SBD1... Side, SBD2... Side, SD1... First side, SD2... Second side, SD3... Third side, SD4... Fourth side, SS... Short side, SS1... Short side, SS2... Short side, TCHP... Terminal, TCHP1... Terminal, TCHP2... Terminal, TDIS... Terminal, TDRV... Terminal, TR... Transistor, TR1... First transistor, TR2... Second transistor, TRC... Charging transistor, TRC1... First charging transistor, TRC2... Second charging transistor, TRD... Discharging transistor, TRD... Charging transistor, TRD1... First discharging transistor, TRD2... Second discharging transistor, TVCC... Terminal, TVCO... Terminal, VCC... Power supply voltage, VCO... Source voltage, VRG... Regulated voltage,VTA…Temperature detection voltage, VTB…Temperature detection voltage, W…Gate width,

Claims

1. A charging transistor that charges a load, A discharging transistor that discharges the load, A control circuit that controls the current flowing through the charging transistor and the current flowing through the discharging transistor, A first temperature sensor that detects the temperature of the charging transistor, A second temperature sensor that detects the temperature of the discharging transistor, comprising: The outer shape of the integrated circuit device has a first side and a second side that intersects the first side, When the direction along the first side of the integrated circuit device is defined as the X direction and the direction along the second side is defined as the Y direction, The charging transistor is composed of a first charging transistor and a second charging transistor that are arranged side by side along the Y direction with the first charging transistor sandwiching a first region, The discharging transistor is composed of a first discharging transistor and a second discharging transistor that are arranged side by side along the Y direction with the first discharging transistor sandwiching a second region, The first temperature sensor, is arranged at a first arrangement position where the position in the X direction is between the center of the first region and the second side, and the position in the Y direction is between the first charging transistor and the second charging transistor, The second temperature sensor, is arranged at a second arrangement position where the position in the X direction is between the center of the second region and the second side, and the position in the Y direction is between the first discharging transistor and the second discharging transistor. An integrated circuit device characterized by this.

2. In the integrated circuit device according to Claim 1, The outer shape of the first region between the first charging transistor and the second charging transistor has a first region side close to the second side and a second region side farther from the second side than the first region side, The outer shape of the second region between the first discharging transistor and the second discharging transistor has a third region side close to the second side and a fourth region side farther from the second side than the third region side, The first temperature sensor is arranged between the center of the first region and the first region side, The second temperature sensor is arranged between the center of the second region and the third region side. An integrated circuit device characterized by this.

3. In the integrated circuit device according to Claim 1 or 2, The outer shape of the integrated circuit device has a third side that is the opposite side of the first side, The charging transistor is disposed between the first side and a center line between the first side and the third side. The discharging transistor is disposed between the third side and the center line, and the integrated circuit device is characterized by this.

4. In the integrated circuit device according to any one of Claims 1 to 3, in a region of the charging transistor, a first pad for connection to the load and a second pad for connection to a first power supply are provided. In a region of the discharging transistor, a third pad for connection to the load and a fourth pad for connection to a second power supply are provided, and the integrated circuit device is characterized by this.

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