Magnetic sensor

Abstract

To provide a magnetic sensor including a magnetic detection element provided on an inclined surface, capable of reducing variations in magnetic field applied from a magnetic field generating body to the magnetic detection element.SOLUTION: A magnetic sensor 1 comprises: an insulating layer 203 including a first inclined surface 203a; a plurality of first MR elements 50A arranged on the first inclined surface 203a; and a plurality of first magnetic field generating bodies 70A arranged on the first inclined surface 203a and generating a magnetic field to be applied to the plurality of first MR elements 50A. Each of the plurality of first magnetic field generating bodies 70A includes a ferromagnetic material part 72 and an antiferromagnetic material part 71. The ferromagnetic material part 72 and the antiferromagnetic material part 71 are stacked in a direction intersecting the first inclined surface 203a.SELECTED DRAWING: Figure 11

Description

Technical Field

[0001] The present invention relates to a magnetic sensor including a magnetic detection element disposed on an inclined surface.

Background Art

[0002] In recent years, magnetic sensors using magnetoresistive effect elements have been used in various applications. As the magnetoresistive effect element, for example, a spin valve type magnetoresistive effect element is used. The spin valve type magnetoresistive effect element has a magnetization fixed layer having a magnetization with a fixed direction, a free layer having a magnetization whose direction can change according to the direction of an applied magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer.

[0003] In a magnetic sensor, a bias magnetic field may be applied to the magnetoresistive effect element for various purposes. For example, Patent Document 1 discloses a magnetic sensor including a plurality of bias magnetic field application portions that apply bias magnetic fields in opposite directions to a part of one free magnetic layer and the other part, respectively, in order to reduce an offset generated in the resistance of the free magnetic layer in a giant magnetoresistive effect element. Each of the plurality of bias magnetic field application portions has a structure in which a magnetic layer is sandwiched between two antiferromagnetic layers.

[0004] Further, Patent Document 2 discloses a current sensor including a plurality of magnetic bodies that apply bias magnetic fields in opposite directions to the magnetization free layers of two magnetoresistive effect elements constituting a full bridge circuit and the magnetization free layers of the other two magnetoresistive effect elements, respectively, in order to detect an external magnetic field other than a current magnetic field based on a current to be measured.

[0005] Patent Document 3 discloses a magnetic sensor in which an X-axis sensor, a Y-axis sensor, and a Z-axis sensor are provided on a substrate. The magnetoresistive effect element constituting the Z-axis sensor is provided on an inclined surface of a protrusion formed on a base film of the substrate.

Prior Art Documents

Patent Documents

[0006] Patent Document 1 Japanese Unexamined Patent Application Publication No. 2022-77691 Patent Document 2 Japanese Unexamined Patent Application Publication No. 2016-90440 Summary of the Invention Problems to be Solved by the Invention

[0007] By the way, in a system including a magnetic sensor, there are cases where it is desired to detect a magnetic field including a component in a direction perpendicular to the surface of a substrate by a magnetoresistive element provided on the substrate. In this case, it is conceivable to arrange the magnetoresistive element on an inclined surface provided on the substrate. When providing a magnetic field generator for applying a bias magnetic field to such a magnetoresistive element, it is conceivable to provide two magnetic field generators so as to sandwich the inclined surface. In this case, if at least one of the magnetoresistive element and the magnetic field generator is displaced from the designed position due to manufacturing variations, there arises a problem that the intensity and direction of the bias magnetic field applied to the free layer of the magnetoresistive element change. This problem becomes prominent when the magnetic field generator includes a plurality of layers as in the bias magnetic field application section of Patent Document 1.

[0008] The present invention has been made in view of such problems, and an object thereof is to provide a magnetic sensor capable of suppressing variations in the magnetic field applied from a magnetic field generator to a magnetic detection element in a magnetic sensor including a magnetic detection element arranged on an inclined surface. Means for Solving the Problems

[0009] The magnetic sensor of the present invention includes a support member having at least one inclined surface inclined with respect to a reference plane, at least one magnetic detection element disposed on the at least one inclined surface and configured to detect a target magnetic field, and at least one magnetic field generator disposed on the at least one inclined surface and configured to generate a magnetic field applied to the at least one magnetic detection element. The at least one magnetic field generator includes a ferromagnetic portion and an antiferromagnetic portion that is in contact with the ferromagnetic portion and exchange-couples with the ferromagnetic portion. The ferromagnetic portion and the antiferromagnetic portion are laminated in a direction intersecting the at least one inclined surface.

Advantages of the Invention

[0010] In the magnetic sensor of the present invention, the ferromagnetic portion and the antiferromagnetic portion of the at least one magnetic field generator are laminated in a direction intersecting the at least one inclined surface. Thereby, according to the present invention, there is an effect that a magnetic sensor capable of suppressing variations in the magnetic field applied from the magnetic field generator to the magnetic detection element can be realized.

Brief Description of the Drawings

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Embodiments for Carrying Out the Invention

[0012] [First Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, with reference to FIGS. 1 to 4, the configuration of a magnetic sensor device including a magnetic sensor according to the first embodiment of the present invention will be described. FIG. 1 is a perspective view showing a magnetic sensor device 100. FIG. 2 is a plan view showing the magnetic sensor device 100. FIG. 3 is a side view showing the magnetic sensor device 100. FIG. 4 is a functional block diagram showing the configuration of the magnetic sensor device 100.

[0013] The magnetic sensor device 100 includes a magnetic sensor 1 according to the present embodiment. The magnetic sensor 1 is composed of a first chip 2 and a second chip 3. The magnetic sensor device 100 further includes a support 4 that supports the first and second chips 2 and 3. The first chip 2, the second chip 3, and the support 4 all have a rectangular parallelepiped shape. The support 4 has a reference plane 4a that is the upper surface, a lower surface 4b that is located on the side opposite to the reference plane 4a, and four side surfaces that connect the reference plane 4a and the lower surface 4b.

[0014] Here, with reference to FIGS. 1 to 3, the reference coordinate system in the present embodiment will be described. The reference coordinate system is a coordinate system based on the magnetic sensor device 100 and is a rectangular coordinate system defined by three axes. In the reference coordinate system, the X direction, the Y direction, and the Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In particular, in the present embodiment, the direction perpendicular to the reference plane 4a of the support 4 and the direction from the lower surface of the support 4 toward the reference plane 4a are defined as the Z direction. Also, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes defining the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

[0015] Hereinafter, a position ahead in the Z direction with respect to the reference position is referred to as "above", and a position on the opposite side of "above" with respect to the reference position is referred to as "below". Also, regarding the components of the magnetic sensor device 100, the surface located at the end in the Z direction is referred to as the "upper surface", and the surface located at the end in the -Z direction is referred to as the "lower surface". Also, the expression "when viewed from the Z direction" means viewing the object from a position away in the Z direction.

[0016] Also, as shown in FIG. 3, the U direction and the V direction are defined as follows. The U direction is the direction rotated from the Y direction toward the -Z direction. The V direction is the direction rotated from the Y direction toward the Z direction. In particular, in the present embodiment, the U direction is the direction rotated by α from the Y direction toward the -Z direction, and the V direction is the direction rotated by α from the Y direction toward the Z direction. Note that α is an angle greater than 0° and less than 90°. Also, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction. The U direction and the V direction are each orthogonal to the X direction.

[0017] The first chip 2 has an upper surface 2a and a lower surface 2b located on opposite sides of each other, and four side surfaces connecting the upper surface 2a and the lower surface 2b. The second chip 3 has an upper surface 3a and a lower surface 3b located on opposite sides of each other, and four side surfaces connecting the upper surface 3a and the lower surface 3b.

[0018] The first chip 2 is mounted on the reference plane 4a in a posture where the lower surface 2b of the first chip 2 faces the reference plane 4a of the support 4. The second chip 3 is mounted on the reference plane 4a in a posture where the lower surface 3b of the second chip 3 faces the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are each joined to the support 4 by, for example, adhesives 6, 7.

[0019] The first chip 2 has a plurality of first electrode pads 21 provided on the upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on the upper surface 3a. The support 4 has a plurality of third electrode pads 41 provided on the reference plane 4a. Although not shown, in the magnetic sensor device 100, among the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads 41, two corresponding electrode pads are connected to each other by bonding wires.

[0020] The magnetic sensor 1 includes a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first chip 2 includes the first detection circuit 10 and the second detection circuit 20. The second chip 3 includes the third detection circuit 30.

[0021] The magnetic sensor device 100 further includes a processor 40. The support 4 includes the processor 40. The first to third detection circuits 10, 20, 30 and the processor 40 are connected via a plurality of first electrode pads 21, a plurality of second electrode pads 31, a plurality of third electrode pads 41, and a plurality of bonding wires.

[0022] Each of the first to third detection circuits 10, 20, 30 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. In particular, in the present embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive effect elements. Hereinafter, the magnetoresistive effect element will be referred to as an MR element.

[0023] The processor 40 is configured to generate a first detection value, a second detection value, and a third detection value that have a corresponding relationship with components in three different directions of a magnetic field at a predetermined reference position by processing a plurality of detection signals generated by the first to third detection circuits 10, 20, and 30. In particular, in the present embodiment, the three different directions are two directions parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is configured by, for example, an application-specific integrated circuit (ASIC).

[0024] The target magnetic field may be, for example, the geomagnetic field. In this case, the first, second, and third detection values respectively have a corresponding relationship with components in three different directions of the geomagnetic field.

[0025] Next, with reference to FIGS. 4 to 7, the circuit configurations of the first to third detection circuits 10, 20, and 30 will be described. FIG. 5 is a circuit diagram showing the circuit configuration of the first detection circuit 10. FIG. 6 is a circuit diagram showing the circuit configuration of the second detection circuit 20. FIG. 7 is a circuit diagram showing the circuit configuration of the third detection circuit 30.

[0026] The first detection circuit 10 is configured to detect a component in a direction parallel to the U direction of the target magnetic field and generate at least one first detection signal having a corresponding relationship with this component. The second detection circuit 20 is configured to detect a component in a direction parallel to the V direction of the target magnetic field and generate at least one second detection signal having a corresponding relationship with this component. The third detection circuit 30 is configured to detect a component in a direction parallel to the X direction of the target magnetic field and generate at least one third detection signal having a corresponding relationship with this component.

[0027] As shown in FIG. 5, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistance part R11, a second resistance part R12, a third resistance part R13, and a fourth resistance part R14. The plurality of MR elements of the first detection circuit 10 constitute the first to fourth resistance parts R11, R12, R13, and R14.

[0028] The first resistor R11 is provided between the power supply terminal V1 and the signal output terminal E11. The second resistor R12 is provided between the signal output terminal E11 and the ground terminal G1. The third resistor R13 is provided between the signal output terminal E12 and the ground terminal G1. The fourth resistor R14 is provided between the power supply terminal V1 and the signal output terminal E12.

[0029] As shown in FIG. 6, the second detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The plurality of MR elements of the second detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0030] The first resistor R21 is provided between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is provided between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is provided between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 is provided between the power supply terminal V2 and the signal output terminal E22.

[0031] As shown in FIG. 7, the third detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The plurality of MR elements of the third detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0032] The first resistor R31 is provided between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is provided between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is provided between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is provided between the power supply terminal V3 and the signal output terminal E32.

[0033] A voltage or current of a predetermined magnitude is applied to each of the power supply terminals V1 to V3. Each of the ground terminals G1 to G3 is connected to the ground.

[0034] Hereinafter, the plurality of MR elements of the first detection circuit 10 are referred to as a plurality of first MR elements 50A, the plurality of MR elements of the second detection circuit 20 are referred to as a plurality of second MR elements 50B, and the plurality of MR elements of the third detection circuit 30 are referred to as a plurality of third MR elements 50C. Since the first to third detection circuits 10, 20, 30 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes a plurality of first MR elements 50A, a plurality of second MR elements 50B, and a plurality of third MR elements 50C. Also, for any MR element, it is represented by attaching the symbol 50.

[0035] The MR element 50 may be a spin valve type MR element or an AMR (anisotropic magnetoresistance effect) element. In particular, in the present embodiment, the MR element 50 is a spin valve type MR element. The MR element 50 has a magnetization fixed layer having a magnetization with a fixed direction, a free layer having a magnetization whose direction can change according to the direction of the target magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer. The MR element 50 may be a TMR (tunnel magnetoresistance effect) element or a GMR (giant magnetoresistance effect) element. In a TMR element, the gap layer is a tunnel barrier layer. In a GMR element, the gap layer is a nonmagnetic conductive layer. In the MR element 50, the resistance value changes according to the angle formed by the direction of magnetization of the free layer with respect to the direction of magnetization of the magnetization fixed layer. When this angle is 0°, the resistance value is the minimum value, and when the angle is 180°, the resistance value is the maximum value. In each MR element 50, the free layer has a shape anisotropy in which the direction of the easy axis of magnetization is orthogonal to the direction of magnetization of the magnetization fixed layer.

[0036] In FIGS. 5 to 7, a plurality of filled arrows overlapping each resistance portion represent the direction of magnetization of the magnetization fixed layer of the MR element 50. Also, a plurality of hollow arrows overlapping each resistance portion represent the direction of magnetization of the free layer of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0037] In the example shown in FIG. 5, the magnetization direction of the magnetization fixed layer in each of the first and third resistance portions R11 and R13 is the U direction. The magnetization direction of the magnetization fixed layer in each of the second and fourth resistance portions R12 and R14 is the -U direction. Also, each free layer of the plurality of first MR elements 50A has shape anisotropy such that the magnetization easy axis direction is parallel to the X direction. The magnetization direction of the free layer in each of the first and second resistance portions R11 and R12 is the X direction when no target magnetic field is applied to the first MR element 50A. The magnetization direction of the free layer in each of the third and fourth resistance portions R13 and R14 is the -X direction in the above case.

[0038] In the example shown in FIG. 6, the magnetization direction of the magnetization fixed layer in each of the first and third resistance portions R21 and R23 is the V direction. The magnetization direction of the magnetization fixed layer in each of the second and fourth resistance portions R22 and R24 is the -V direction. Also, each free layer of the plurality of second MR elements 50B has shape anisotropy such that the magnetization easy axis direction is parallel to the X direction. The magnetization direction of the free layer in each of the first and second resistance portions R21 and R22 is the X direction when no target magnetic field is applied to the second MR element 50B. The magnetization direction of the free layer in each of the third and fourth resistance portions R23 and R24 is the -X direction in the above case.

[0039] In the example shown in FIG. 7, the magnetization direction of the magnetization fixed layer in each of the first and third resistance portions R31 and R33 is the X direction. The magnetization direction of the magnetization fixed layer in each of the second and fourth resistance portions R32 and R34 is the -X direction. Also, each free layer of the plurality of third MR elements 50C has shape anisotropy such that the magnetization easy axis direction is parallel to the Y direction. The magnetization direction of the free layer in each of the first and second resistance portions R31 and R32 is the Y direction when no target magnetic field is applied to the third MR element 50C. The magnetization direction of the free layer in each of the third and fourth resistance portions R33 and R34 is the -Y direction in the above case.

[0040] The magnetic sensor 1 further includes at least one magnetic field generator that generates a magnetic field applied to at least one MR element 50. In particular, in this embodiment, the at least one magnetic field generator is a plurality of magnetic field generators. In FIG. 5, the arrows labeled M11, M12, M13, and M14 indicate the directions of the magnetic fields applied to the plurality of first MR elements 50A by the plurality of magnetic field generators. In the first and second resistance portions R11 and R12, a magnetic field in the X direction is applied to the plurality of first MR elements 50A by the plurality of magnetic field generators. In the third and fourth resistance portions R13 and R14, a magnetic field in the -X direction is applied to the plurality of first MR elements 50A by the plurality of magnetic field generators.

[0041] In FIG. 6, the arrows labeled M21, M22, M23, and M24 indicate the directions of the magnetic fields applied to the plurality of second MR elements 50B by the plurality of magnetic field generators. In the first and second resistance portions R21 and R22, a magnetic field in the X direction is applied to the plurality of second MR elements 50B by the plurality of magnetic field generators. In the third and fourth resistance portions R23 and R24, a magnetic field in the -X direction is applied to the plurality of second MR elements 50B by the plurality of magnetic field generators.

[0042] In FIG. 7, the arrows labeled M31, M32, M33, and M34 indicate the directions of the magnetic fields applied to the plurality of third MR elements 50C by the plurality of magnetic field generators. In the first and second resistance portions R31 and R32, a magnetic field in the Y direction is applied to the plurality of third MR elements 50C by the plurality of magnetic field generators. In the third and fourth resistance portions R33 and R34, a magnetic field in the -Y direction is applied to the plurality of third MR elements 50C by the plurality of magnetic field generators.

[0043] Note that, from the perspective of the manufacturing accuracy of the MR element 50 and the magnetic field generators, etc., the direction of magnetization of the magnetization fixed layer, the direction of the easy axis of magnetization of the free layer, and the direction of the magnetic field applied to the MR element 50 by the plurality of magnetic field generators may deviate slightly from the above-described directions. Further, the magnetization of the magnetization fixed layer may be configured to include a magnetization component having the above-described direction as the main component. In this case, the direction of magnetization of the magnetization fixed layer is the above-described direction or substantially the above-described direction.

[0044] Next, the first to third detection signals will be described. First, with reference to FIG. 5, the first detection signal will be described. When the intensity of the component in the direction parallel to the U direction of the target magnetic field changes, the resistance values of the respective resistance portions R11 to R14 of the first detection circuit 10 change such that the resistance values of the resistance portions R11 and R13 increase while the resistance values of the resistance portions R12 and R14 decrease, or the resistance values of the resistance portions R11 and R13 decrease while the resistance values of the resistance portions R12 and R14 increase. Thereby, the potentials of the signal output terminals E11 and E12 change. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11 and a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0045] Next, with reference to FIG. 6, the second detection signal will be described. When the intensity of the component in the direction parallel to the V direction of the target magnetic field changes, the resistance values of the respective resistance portions R21 to R24 of the second detection circuit 20 change such that the resistance values of the resistance portions R21 and R23 increase while the resistance values of the resistance portions R22 and R24 decrease, or the resistance values of the resistance portions R21 and R23 decrease while the resistance values of the resistance portions R22 and R24 increase. Thereby, the potentials of the signal output terminals E21 and E22 change. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21 and a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0046] Next, with reference to FIG. 7, the third detection signal will be described. When the intensity of the component in the direction parallel to the X direction of the target magnetic field changes, the resistance values of the resistance portions R31 to R34 of the third detection circuit 30 change such that the resistance values of the resistance portions R31 and R33 increase while the resistance values of the resistance portions R32 and R34 decrease, or the resistance values of the resistance portions R31 and R33 decrease while the resistance values of the resistance portions R32 and R34 increase. As a result, the potentials of the signal output terminals E31 and E32 change. The third detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31 and generate a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0047] Next, the operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S11 and S12 and the second detection signals S21 and S22. The first detection value is a detection value corresponding to the component in the direction parallel to the Y direction of the target magnetic field. The second detection value is a detection value corresponding to the component in the direction parallel to the Z direction of the target magnetic field. Hereinafter, the first detection value will be represented by the symbol Sy, and the second detection value will be represented by the symbol Sz.

[0048] The processor 40 generates the first and second detection values Sy and Sz as follows, for example. First, the processor 40 generates a value S1 by an operation including obtaining the difference S11 - S12 between the first detection signal S11 and the first detection signal S12, and generates a value S2 by an operation including obtaining the difference S21 - S22 between the second detection signal S21 and the second detection signal S22. Next, the processor 40 calculates values S3 and S4 using the following equations (1) and (2).

[0049] S3 = (S2 + S1) / (2cosα) …(1) S4 = (S2 - S1) / (2sinα) …(2)

[0050] The first detected value Sy may be the value S3 itself, or may be a value obtained by applying predetermined corrections such as gain adjustment and offset adjustment to the value S3. Similarly, the second detected value Sz may be the value S4 itself, or may be a value obtained by applying predetermined corrections such as gain adjustment and offset adjustment to the value S4.

[0051] The processor 40 is further configured to generate a third detected value based on the third detection signals S31 and S32. The third detected value is a detected value corresponding to the component in the direction parallel to the X direction of the target magnetic field. Hereinafter, the third detected value is represented by the symbol Sx.

[0052] In the present embodiment, the processor 40 generates the third detected value Sx by an operation including obtaining the difference S31 - S32 between the third detection signal S31 and the third detection signal S32. The third detected value Sx may be the difference S31 - S32 itself, or may be a value obtained by applying predetermined corrections such as gain adjustment and offset adjustment to the difference S31 - S32.

[0053] Next, with reference to FIGS. 8 to 11, the structure of the first chip 2 will be described in detail. FIG. 8 is a perspective view showing a part of the first chip 2. FIG. 9 is a plan view showing a part of the first chip 2. FIGS. 10 and 11 are cross-sectional views showing a part of the first chip 2. FIG. 10 shows a part of the cross-section at the position indicated by the line 10-10 in FIG. 9. FIG. 11 shows a part of the cross-section at the position indicated by the line 11-11 in FIG. 9.

[0054] The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 205, 206, 207, a plurality of lower electrodes 61A, a plurality of lower electrodes 61B, a plurality of upper electrodes 62A, a plurality of upper electrodes 62B, a plurality of first magnetic field generators 70A, and a plurality of second magnetic field generators 70B. The upper surface 201a of the substrate 201 is assumed to be parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 201a of the substrate 201.

[0055] The insulating layers 202 and 203 are arranged in this order on the substrate 201. The plurality of lower electrodes 61A and the plurality of lower electrodes 61B are arranged on the insulating layer 203. The insulating layer 204 is arranged around the plurality of lower electrodes 61A and around the plurality of lower electrodes 61B on the insulating layer 203. The plurality of first MR elements 50A are arranged on the plurality of lower electrodes 61A. The plurality of second MR elements 50B are arranged on the plurality of lower electrodes 61B. The insulating layer 205 is arranged around the plurality of first MR elements 50A and around the plurality of second MR elements 50B on the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the insulating layer 204. The plurality of upper electrodes 62A are arranged on the plurality of first MR elements 50A and the insulating layer 205. The plurality of upper electrodes 62B are arranged on the plurality of second MR elements 50B and the insulating layer 205. The insulating layer 206 is arranged around the plurality of upper electrodes 62A and around the plurality of upper electrodes 62B on the insulating layer 205. The insulating layer 207 is arranged on the plurality of upper electrodes 62A, the plurality of upper electrodes 62B, and the insulating layer 206.

[0056] The plurality of first magnetic field generators 70A and the plurality of second magnetic field generators 70B are embedded in the insulating layer 205. Each of the plurality of first magnetic field generators 70A is arranged at a predetermined interval from the first MR element 50A and the lower electrode 61A. Each of the plurality of second magnetic field generators 70B is arranged at a predetermined interval from the second MR element 50B and the lower electrode 61B. The insulating layer 205 may include insulating films interposed between each of the plurality of first magnetic field generators 70A and each of the plurality of first MR elements 50A, between each of the plurality of second magnetic field generators 70B and each of the plurality of second MR elements 50B, between each of the plurality of first magnetic field generators 70A and each of the plurality of lower electrodes 61A, and between each of the plurality of second magnetic field generators 70B and each of the plurality of lower electrodes 61B.

[0057] The upper surfaces of some of the plurality of first magnetic field generators 70A may be in contact with the lower surfaces of the plurality of upper electrodes 62A. The upper surfaces of some of the plurality of second magnetic field generators 70B may be in contact with the lower surfaces of the plurality of upper electrodes 62B.

[0058] The first chip 2 includes a support member that supports a plurality of first MR elements 50A and a plurality of second MR elements 50B. The support member has at least one inclined surface that is inclined with respect to the upper surface 201a of the substrate 201. In particular, in the present embodiment, the support member is constituted by an insulating layer 203.

[0059] The insulating layer 203 has a plurality of convex surfaces 203c that each project in a direction (Z direction) away from the upper surface 201a of the substrate 201. Each of the plurality of convex surfaces 203c extends in a direction parallel to the X direction. The overall shape of the convex surface 203c is a triangular roof shape. Also, the plurality of convex surfaces 203c are arranged in a direction parallel to the Y direction.

[0060] Here, pay attention to any one of the plurality of convex surfaces 203c. The convex surface 203c includes a first inclined surface 203a and a second inclined surface 203b. The first inclined surface 203a is a surface that constitutes a part of the convex surface 203c on the Y direction side. The second inclined surface 203b is a surface that constitutes a part of the convex surface 203c on the -Y direction side. Each of the first inclined surface 203a and the second inclined surface 203b has a long shape in a direction parallel to the X direction.

[0061] The upper surface 201a of the substrate 201 is parallel to the XY plane. Also, the reference plane 4a is parallel to the XY plane. Each of the first inclined surface 203a and the second inclined surface 203b is inclined with respect to each of the upper surface 201a of the substrate 201 and the reference plane 4a. The second inclined surface 203b faces in a direction different from that of the first inclined surface 203a. In a YZ cross-section perpendicular to the upper surface 201a of the substrate 201, the interval between the first inclined surface 203a and the second inclined surface 203b becomes smaller as it moves away from the upper surface 201a of the substrate 201.

[0062] In this embodiment, since there are a plurality of convex surfaces 203c, there are also a plurality of first inclined surfaces 203a and a plurality of second inclined surfaces 203b respectively. The insulating layer 203 has a plurality of first inclined surfaces 203a and a plurality of second inclined surfaces 203b.

[0063] The plurality of lower electrodes 61A are arranged on the plurality of first inclined surfaces 203a. The plurality of lower electrodes 61B are arranged on the plurality of second inclined surfaces 203b. As described above, since each of the first inclined surface 203a and the second inclined surface 203b is inclined with respect to the upper surface 201a of the substrate 201, that is, the XY plane, the upper surfaces of the plurality of lower electrodes 61A and the upper surfaces of the plurality of lower electrodes 61B are also inclined with respect to the XY plane. Also, the reference plane 4a is parallel to the XY plane. Therefore, it can be said that the plurality of first MR elements 50A and the plurality of second MR elements 50B are arranged on an inclined surface inclined with respect to the reference plane 4a. The insulating layer 203 is a member for supporting each of the plurality of first MR elements 50A and the plurality of second MR elements 50B so as to be inclined with respect to the reference plane 4a.

[0064] Each of the plurality of first MR elements 50A has a lower surface having a shape along the first inclined surface 203a. Each of the plurality of second MR elements 50B has a lower surface having a shape along the second inclined surface 203b. Here, pay attention to any first MR element 50A among the plurality of first MR elements 50A and any second MR element 50B among the plurality of second MR elements 50B. The any first MR element 50A and the any second MR element 50B are not arranged on the same plane.

[0065] The plurality of first magnetic field generators 70A are substantially arranged on the plurality of first inclined surfaces 203a, but are not arranged on the plurality of second inclined surfaces 203b. Each of the plurality of first magnetic field generators 70A has a shape along the first inclined surface 203a and has a lower surface having at least a part substantially the same shape as the lower surface of the first MR element 50A.

[0066] The plurality of second magnetic field generators 70B are substantially arranged on the plurality of second inclined surfaces 203b, but not on the plurality of first inclined surfaces 203a. Each of the plurality of second magnetic field generators 70B has a shape along the second inclined surface 203b and has a lower surface at least partially having substantially the same shape as the lower surface of the second MR element 50B.

[0067] Here, focus on any first magnetic field generator 70A among the plurality of first magnetic field generators 70A and any second magnetic field generator 70B among the plurality of second magnetic field generators 70B. Any first magnetic field generator 70A and any second magnetic field generator 70B are not arranged on the same plane.

[0068] Although not shown, the insulating layer 203 further has a flat surface existing around the plurality of convex surfaces 203c. The plurality of convex surfaces 203c may protrude in the Z direction from the flat surface. Also, the plurality of convex surfaces 203c may be arranged at a predetermined interval so that a flat surface is formed between two adjacent convex surfaces 203c. Alternatively, the insulating layer 203 may have a groove portion recessed in the -Z direction from the flat surface. In this case, the plurality of convex surfaces 203c may exist in the groove portion.

[0069] As shown in FIGS. 8 and 9, the plurality of first magnetic field generators 70A are arranged such that a plurality of them are arranged side by side in the X direction and the Y direction, respectively. Each of the plurality of first MR elements 50A is arranged between two adjacent first magnetic field generators 70A in a direction parallel to the X direction. On one first inclined surface 203a, a plurality of first MR elements 50A and a plurality of first magnetic field generators 70A are arranged in a row.

[0070] Similarly, the plurality of second magnetic field generators 70B are arranged such that a plurality of them are arranged side by side in the X direction and the Y direction, respectively. Each of the plurality of second MR elements 50B is arranged between two adjacent second magnetic field generators 70B in a direction parallel to the X direction. On one second inclined surface 203b, a plurality of second MR elements 50B and a plurality of second magnetic field generators 70B are arranged in a row.

[0071] A row composed of a plurality of first MR elements 50A and a plurality of first magnetic field generators 70A, and a row composed of a plurality of second MR elements 50B and a plurality of second magnetic field generators 70B are arranged alternately in a direction parallel to the Y direction.

[0072] The plurality of first MR elements 50A are connected in series by a plurality of lower electrodes 61A and a plurality of upper electrodes 62A. Here, with reference to FIG. 16, the connection method of the plurality of first MR elements 50A will be described in detail. In FIG. 16, reference numeral 61 indicates a lower electrode corresponding to an arbitrary MR element 50, and reference numeral 62 indicates an upper electrode corresponding to an arbitrary MR element 50. Also, in FIG. 16, reference numeral 70 indicates an arbitrary magnetic field generator.

[0073] As shown in FIG. 16, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 in the longitudinal direction of the lower electrode 61. On the upper surface of the lower electrode 61, MR elements 50 are respectively arranged in the vicinity of both longitudinal ends. Also, each upper electrode 62 has an elongated shape and is arranged on two adjacent lower electrodes 61 adjacent in the longitudinal direction of the lower electrode 61 to electrically connect two adjacent MR elements 50.

[0074] A magnetic field generator 70 is arranged between two adjacent MR elements 50 in the longitudinal direction of the lower electrode 61. A gap is formed between the magnetic field generator 70, the MR element 50, and the lower electrode 61. The magnetic field generator 70 may or may not be in contact with the upper electrode 62.

[0075] Although not shown, one MR element 50 located at the end of a row of a plurality of MR elements 50 arranged in a row is connected to another one MR element 50 located at the end of another row of a plurality of other MR elements 50 adjacent in a direction intersecting the longitudinal direction of the lower electrode 61. These two MR elements 50 are connected to each other by an electrode (not shown). The electrode (not shown) may be an electrode that connects the lower surfaces or the upper surfaces of the two MR elements 50.

[0076] When the MR element 50 in FIG. 16 is the first MR element 50A, the lower electrode 61, the upper electrode 62, and the magnetic field generator 70 in FIG. 16 respectively correspond to the lower electrode 61A, the upper electrode 62A, and the first magnetic field generator 70A. When the MR element 50 in FIG. 16 is the second MR element 50B, the lower electrode 61, the upper electrode 62, and the magnetic field generator 70 in FIG. 16 respectively correspond to the lower electrode 61B, the upper electrode 62B, and the second magnetic field generator 70B.

[0077] Here, the definitions of the first direction D1, the second direction D2, and the third direction D3 shown in FIG. 16 will be described. The first direction D1, the second direction D2, and the third direction D3 are orthogonal to each other. The first direction D1 is a direction parallel to the longitudinal direction of the lower electrode 61 (the same as the longitudinal direction of the upper electrode 62). The third direction D3 is a direction from the lower electrode 61 toward the upper electrode 62.

[0078] When the MR element 50 shown in FIG. 16 is the first MR element 50A, the first direction D1 is the X direction or the -X direction, the second direction D2 is the U direction or the -U direction, and the third direction D3 is a direction intersecting the first inclined surface 203a. When the MR element 50 shown in FIG. 16 is the second MR element 50B, the first direction D1 is the X direction or the -X direction, the second direction D2 is the V direction or the -V direction, and the third direction D3 is a direction intersecting the second inclined surface 203b.

[0079] Next, with reference to FIGS. 12 to 15, the structure of the second chip 3 will be described in detail. FIG. 12 is a perspective view showing a part of the second chip 3. FIG. 13 is a plan view showing a part of the second chip 3. FIGS. 14 and 15 are cross-sectional views showing a part of the second chip 3. FIG. 14 shows a part of the cross-section at the position indicated by the line 14-14 in FIG. 13. FIG. 15 shows a part of the cross-section at the position indicated by the line 15-15 in FIG. 13.

[0080] The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 306, a plurality of lower electrodes 61C, a plurality of upper electrodes 62C, and a plurality of third magnetic field generators 70C. The upper surface 301a of the substrate 301 is assumed to be parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301.

[0081] The insulating layer 302 is disposed on the substrate 301. The plurality of lower electrodes 61C are disposed on the insulating layer 302. The insulating layer 303 is disposed around the plurality of lower electrodes 61C on the insulating layer 302. The plurality of third MR elements 50C are disposed on the plurality of lower electrodes 61C. The insulating layer 304 is disposed around the plurality of third MR elements 50C on the plurality of lower electrodes 61C and the insulating layer 303. The plurality of upper electrodes 62C are disposed on the plurality of third MR elements 50C and the insulating layer 304. The insulating layer 305 is disposed around the plurality of upper electrodes 62C on the insulating layer 304. The insulating layer 306 is disposed on the plurality of upper electrodes 62C and the insulating layer 305.

[0082] The plurality of third magnetic field generators 70C are embedded in the insulating layer 304. Each of the plurality of third magnetic field generators 70C is disposed at a predetermined interval from the third MR element 50C and the lower electrode 61C. The insulating layer 304 may include an insulating film interposed between each of the plurality of third magnetic field generators 70C and each of the plurality of second MR elements 50C, and between each of the plurality of third magnetic field generators 70C and each of the plurality of lower electrodes 61C. The upper surfaces of some of the plurality of third magnetic field generators 70C may be in contact with the lower surfaces of the plurality of upper electrodes 62C.

[0083] The second chip 3 includes a support member that supports the plurality of third MR elements 50C. In particular, in the present embodiment, the support member is constituted by the insulating layer 302. The upper surface of the insulating layer 302 includes a flat surface.

[0084] The upper surface 301a of the substrate 301 is parallel to the XY plane, and the upper surfaces of each of the plurality of lower electrodes 61C are also parallel to the XY plane. Further, the reference plane 4a is parallel to the XY plane. Therefore, it can be said that the plurality of third MR elements 50C are arranged on a plane parallel to the reference plane 4a.

[0085] As shown in FIGS. 12 and 13, a plurality of third magnetic field generators 70C are arranged such that a plurality of them are arranged side by side in the X direction and the Y direction, respectively. Each of the plurality of third MR elements 50C is arranged between two adjacent third magnetic field generators 70C in a direction parallel to the Y direction.

[0086] The plurality of third MR elements 50C are connected in series by the plurality of lower electrodes 61C and the plurality of upper electrodes 62C. The description of the connection method of the plurality of first MR elements 50A described above also applies to the connection method of the plurality of third MR elements 50C. When the MR element 50 in FIG. 16 is the third MR element 50C, the lower electrode 61, the upper electrode 62, and the magnetic field generator 70 in FIG. 16 correspond to the lower electrode 61C, the upper electrode 62C, and the third magnetic field generator 70C, respectively.

[0087] When the MR element 50 shown in FIG. 16 is the third MR element 50C, the first direction D1 is the Y direction or the -Y direction, the second direction D2 is the X direction or the -X direction, and the third direction D3 is the Z direction.

[0088] Next, with reference to FIG. 16, the MR element 50 will be described in more detail. In FIG. 16, reference numeral 52 denotes a magnetization-fixed layer, reference numeral 53 denotes a gap layer, and reference numeral 54 denotes a free layer. The MR element 50 further has an antiferromagnetic layer 51. The antiferromagnetic layer 51, magnetization-fixed layer 52, gap layer 53, and free layer 54 are laminated in this order from the lower electrode 61 toward the upper electrode 62. The antiferromagnetic layer 51 is made of an antiferromagnetic material and causes an exchange coupling with the magnetization-fixed layer 52 to fix the direction of magnetization of the magnetization-fixed layer 52. Note that the magnetization-fixed layer 52 may be a so-called self-pinning type fixed layer (Synthetic Ferri Pinned layer, SFP layer). The self-pinning type fixed layer has a stacked ferrite structure in which a ferromagnetic layer, a nonmagnetic intermediate layer, and a ferromagnetic layer are laminated, and two ferromagnetic layers are antiferromagnetically coupled. When the magnetization-fixed layer 52 is a self-pinning type fixed layer, the antiferromagnetic layer 51 may be omitted.

[0089] Note that the arrangement of the layers 51 to 54 in the MR element 50 may be upside down from the arrangement shown in FIG. 16.

[0090] In the first MR element 50A, the antiferromagnetic layer 51, magnetization-fixed layer 52, gap layer 53, and free layer 54 are laminated in a direction intersecting the first inclined surface 203a (see FIGS. 8 and 10). This direction may be a direction perpendicular to the first inclined surface 203a. Among the first MR element 50A, at least the magnetization-fixed layer 52 and the free layer 54 correspond to the "plurality of magnetic layers" of the present invention.

[0091] In the second MR element 50B, the antiferromagnetic layer 51, magnetization-fixed layer 52, gap layer 53, and free layer 54 are laminated in a direction intersecting the second inclined surface 203b (see FIGS. 8 and 10). This direction may be a direction perpendicular to the second inclined surface 203b. Among the second MR element 50B, at least the magnetization-fixed layer 52 and the free layer 54 correspond to the "plurality of magnetic layers" of the present invention.

[0092] In the third MR element 50C, the antiferromagnetic layer 51, the magnetization fixing layer 52, the gap layer 53, and the free layer 54 are laminated in a direction intersecting with the upper surface of the insulating layer 302 (see FIGS. 12 and 14). This direction may be a direction perpendicular to the upper surface of the insulating layer 302, that is, the Z direction.

[0093] Next, referring to FIG. 16, the magnetic field generator 70 will be described in more detail. The magnetic field generator 70 includes a ferromagnetic part 72 and an antiferromagnetic part 71 that is in contact with the ferromagnetic part 72 and exchange-couples with the ferromagnetic part 72.

[0094] The ferromagnetic part 72 has magnetization as a whole. The magnetization of the ferromagnetic part 72 as a whole is the volume average of the vector sum of the magnetic moments per unit of atoms, crystal lattices, etc. in the entire ferromagnetic part 72. Hereinafter, the magnetization of the ferromagnetic part 72 as a whole will be simply referred to as the magnetization of the ferromagnetic part 72.

[0095] In the magnetic field generator 70, the direction of magnetization of the ferromagnetic part 72 is defined by the exchange coupling between the antiferromagnetic part 71 and the ferromagnetic part 72. Thereby, the magnetic field generator 70 has high resistance to external disturbance magnetic fields.

[0096] The ferromagnetic part 72 may be composed of one ferromagnetic layer or may include a plurality of laminated constituent layers. The ferromagnetic part 72 (ferromagnetic layer) is formed of a ferromagnetic material containing one or more elements among Co, Fe, and Ni. Examples of such ferromagnetic materials include CoFe, CoFeB, and CoNiFe. The antiferromagnetic part 71 is formed of an antiferromagnetic material such as IrMn or PtMn.

[0097] The dimension of the magnetic field generator 70 in the direction parallel to the second direction D2 is larger than the dimension of the MR element 50 in the direction parallel to the second direction D2. Also, the dimension of the magnetic field generator 70 in the direction parallel to the second direction D2 is larger than the dimension of the magnetic field generator 70 in the direction parallel to the first direction D1.

[0098] At least a part of the free layer 54 of the MR element 50 overlaps at least a part of the ferromagnetic part 72 of the magnetic field generator 70 when viewed from the first direction D1. In the example shown in FIG. 16, when viewed from the first direction D1, the entire free layer 54 overlaps a part of the ferromagnetic part 72.

[0099] In the first magnetic field generator 70A, the antiferromagnetic part 71 and the ferromagnetic part 72 are laminated in a direction intersecting the first inclined surface 203a (see FIGS. 8 and 11). This direction may be a direction perpendicular to the first inclined surface 203a. Further, each of the antiferromagnetic part 71 and the ferromagnetic part 72 has a lower surface that faces the first inclined surface 203a and is inclined with respect to the upper surface 201a of the substrate 201, that is, the XY plane. Such a lower surface can be realized by forming each of the antiferromagnetic part 71 and the ferromagnetic part 72 with a film thickness such that the shape of the first inclined surface 203a appears.

[0100] In the second magnetic field generator 70B, the antiferromagnetic part 71 and the ferromagnetic part 72 are laminated in a direction intersecting the second inclined surface 203b (see FIGS. 8 and 11). This direction may be a direction perpendicular to the second inclined surface 203b. Further, each of the antiferromagnetic part 71 and the ferromagnetic part 72 has a lower surface that faces the second inclined surface 203b and is inclined with respect to the upper surface 201a of the substrate 201, that is, the XY plane. Such a lower surface can be realized by forming each of the antiferromagnetic part 71 and the ferromagnetic part 72 with a film thickness such that the shape of the second inclined surface 203b appears.

[0101] In the third magnetic field generator 70C, the antiferromagnetic part 71 and the ferromagnetic part 72 are laminated in a direction intersecting the upper surface of the insulating layer 302 (see FIGS. 12 and 15). This direction may be a direction perpendicular to the upper surface of the insulating layer 302, that is, the Z direction.

[0102] Next, the arrangement of the plurality of MR elements 50 and the plurality of magnetic field generators 70 will be described. First, with reference to FIG. 17, a first example of the arrangement of the plurality of MR elements 50 and the plurality of magnetic field generators 70 will be described. The first chip 2 has a first element arrangement region for arranging a plurality of first MR elements 50A, a plurality of second MR elements 50B, a plurality of first magnetic field generators 70A, and a plurality of second magnetic field generators 70B. Since the first chip 2 is a component of the magnetic sensor 1, it can also be said that the magnetic sensor 1 has the first element arrangement region. In the present embodiment, the first element arrangement region, the second element arrangement region to be described later, and the plurality of regions are defined as plane regions parallel to the XY plane. The plurality of first MR elements 50A, the plurality of second MR elements 50B, the plurality of first magnetic field generators 70A, and the plurality of second magnetic field generators 70B overlap the first element arrangement region when viewed from the Z direction. In the present embodiment, for convenience, the first element arrangement region is assumed to be on the upper surface of the insulating layer 203.

[0103] The first element arrangement region includes a first region A21, a second region A22, a third region A23, and a fourth region A24. The first region A21 is a region corresponding to the first resistance portions R11, R21. The second region A22 is a region corresponding to the second resistance portions R12, R22. The third region A23 is a region corresponding to the third resistance portions R13, R23. The fourth region A24 is a region corresponding to the fourth resistance portions R14, R24.

[0104] The plurality of first MR elements 50A are divided and arranged in the first to fourth regions A21 to A24. The first MR element 50A constituting the first resistance portion R11 is arranged in the first region A21. The first MR element 50A constituting the second resistance portion R12 is arranged in the second region A22. The first MR element 50A constituting the third resistance portion R13 is arranged in the third region A23. The first MR element 50A constituting the fourth resistance portion R14 is arranged in the fourth region A24.

[0105] The plurality of first magnetic field generators 70A are divided and arranged in the first to fourth regions A21 to A24. Among the first to fourth regions A21 to A24, each of the plurality of first magnetic field generators 70A arranged in two regions and each of the plurality of first magnetic field generators 70A arranged in the other two regions have magnetizations in different directions from each other.

[0106] Here, the direction of the arrow marked with the reference numeral M11 shown in FIG. 5 is denoted as the direction M11. The directions of the arrows marked with reference numerals other than M11 are also denoted in the same manner as the direction M11. The magnetization of each ferromagnetic body portion 72 of the plurality of first magnetic field generators 70A arranged in the first region A21 includes a component in the direction M11. The magnetization of each ferromagnetic body portion 72 of the plurality of first magnetic field generators 70A arranged in the second region A22 includes a component in the direction M12 (see FIG. 5). The magnetization of each ferromagnetic body portion 72 of the plurality of first magnetic field generators 70A arranged in the third region A23 includes a component in the direction M13 (see FIG. 5). The magnetization of each ferromagnetic body portion 72 of the plurality of first magnetic field generators 70A arranged in the fourth region A24 includes a component in the direction M14 (see FIG. 5).

[0107] As shown in FIG. 5, the directions M11 and M12 are the same as the X direction. Therefore, the magnetization of each ferromagnetic body portion 72 of the plurality of first magnetic field generators 70A arranged in the first region A21 and the plurality of first magnetic field generators 70A arranged in the second region A22 includes a component in the X direction. This magnetization may include the component in the X direction as a main component. In this case, the direction of this magnetization is the X direction or substantially the X direction.

[0108] As shown in FIG. 5, the directions M13 and M14 are the same as the -X direction. Therefore, the magnetization of each ferromagnetic body portion 72 of the plurality of first magnetic field generators 70A arranged in the third region A23 and the plurality of first magnetic field generators 70A arranged in the fourth region A24 includes a component in the -X direction. This magnetization may include the component in the -X direction as a main component. In this case, the direction of this magnetization is the -X direction or substantially the -X direction.

[0109] The description of the arrangement of the plurality of first MR elements 50A and the above description of the arrangement and magnetization directions of the plurality of first magnetic field generators 70A also apply to the plurality of second MR elements 50B and the plurality of second magnetic field generators 70B. In the above description of the arrangement of the plurality of first MR elements 50A, if the first MR element 50A, the first resistance part R11, the second resistance part R12, the third resistance part R13, and the fourth resistance part R14 are respectively replaced with the second MR element 50B, the first resistance part R21, the second resistance part R22, the third resistance part R23, and the fourth resistance part R24, it becomes a description of the arrangement of the plurality of second MR elements 50B. Also, in the above description of the arrangement and magnetization directions of the plurality of first magnetic field generators 70A, if the first magnetic field generator 70A and the directions M11, M12, M13, M14 are respectively replaced with the second magnetic field generator 70B and the directions M21, M22, M23, M24 (see FIG. 6), it becomes a description of the arrangement and magnetization directions of the plurality of second magnetic field generators 70B.

[0110] In the first example, the first to fourth regions A21 to A24 are arranged in the order of regions A22, A23, A21, A24 from the -X direction side edge of the first chip 2 toward the X direction side edge of the first chip 2. The plurality of first MR elements 50A, the plurality of second MR elements 50B, the plurality of first magnetic field generators 70A, and the plurality of second magnetic field generators 70B are each arranged according to the same rule as the first to fourth regions A21 to A24 for each of the aforementioned features.

[0111] The second chip 3 has a second element arrangement region for arranging the plurality of third MR elements 50C and the plurality of third magnetic field generators 70C. Since the second chip 3 is a component of the magnetic sensor 1, it can also be said that the magnetic sensor 1 has the second element arrangement region. The plurality of third MR elements 50C and the plurality of third magnetic field generators 70C overlap the second element arrangement region when viewed from the Z direction. In the present embodiment, for convenience, the second element arrangement region is assumed to be on the upper surface of the insulating layer 302.

[0112] The second element arrangement region includes a first region A31, a second region A32, a third region A33, and a fourth region A34. The first region A31 is a region corresponding to the first resistance part R31. The second region A 32 is a region corresponding to the second resistance part R32. The third region A 33 is a region corresponding to the third resistance part R33. The fourth region A 34 is a region corresponding to the fourth resistance part R34.

[0113] The plurality of third MR elements 50C are divided and arranged in the first to fourth regions A31 to A34. The third MR elements 50C constituting the first resistance part R31 are arranged in the first region A31. The third MR elements 50C constituting the second resistance part R32 are arranged in the second region A32. The third MR elements 50C constituting the third resistance part R33 are arranged in the third region A33. The third MR elements 50C constituting the fourth resistance part R34 are arranged in the fourth region A34.

[0114] The plurality of third magnetic field generators 70C are divided and arranged in the first to fourth regions A31 to A34. Among the first to fourth regions A31 to A34, each of the plurality of third magnetic field generators 70C arranged in two regions and each of the plurality of third magnetic field generators 70C arranged in the other two regions have magnetizations in different directions.

[0115] The magnetization of each ferromagnetic body part 72 of the plurality of third magnetic field generators 70C arranged in the first region A31 includes a component in the direction M31 (see FIG. 7). The magnetization of each ferromagnetic body part 72 of the plurality of third magnetic field generators 70C arranged in the second region A32 includes a component in the direction M32 (see FIG. 7). The each ferromagnetic body part 72 of magnetization of the plurality of third magnetic field generators 70C arranged in the third region A33 includes a component in the direction M33 (see FIG. 7). The magnetization of each ferromagnetic body part 72 of the plurality of third magnetic field generators 70C arranged in the fourth region A34 includes a component in the direction M34 (see FIG. 7).

[0116] As shown in FIG. 7, the directions M31 and M32 are the same as the Y direction. Therefore, the magnetization of each ferromagnetic body portion 72 of the plurality of third magnetic field generators 70C arranged in the first region A31 and the plurality of third magnetic field generators 70C arranged in the second region A32 includes a component in the Y direction. This magnetization may include a component in the Y direction as a main component. In this case, the direction of this magnetization is the Y direction or substantially the Y direction.

[0117] As shown in FIG. 7, the directions M33 and M34 are the same as the -Y direction. Therefore, the magnetization of each ferromagnetic body portion 72 of the plurality of third magnetic field generators 70C arranged in the third region A33 and the plurality of third magnetic field generators 70C arranged in the fourth region A34 includes a component in the -Y direction. This magnetization may include a component in the -Y direction as a main component. In this case, the direction of this magnetization is the -Y direction or substantially the -Y direction.

[0118] In the first example, the first to fourth regions A31 to A34 are arranged in the order of regions A32, A33, A31, A34 from the -X direction side edge of the second chip 3 toward the X direction side edge of the second chip 3. The plurality of third MR elements 50C and the plurality of third magnetic field generators 70C are arranged according to the same rules as the first to fourth regions A31 to A34 for each of the aforementioned features.

[0119] Next, with reference to FIG. 18, a second example of the arrangement of the plurality of MR elements 50 and the plurality of magnetic field generators 70 will be described. In the second example, the first and second regions A21 and A22 are arranged in this order in the -Y direction. The third and fourth regions A23 and A24 are respectively arranged ahead in the -X direction with respect to the second and first regions A22 and A21.

[0120] Also, in the second example, the first and second regions A31 and A32 are arranged in this order in the -Y direction. The third and fourth regions A33 and A34 are respectively arranged ahead in the -X direction with respect to the second and first regions A32 and A31.

[0121] Next, a manufacturing method of the magnetic sensor device 100 in the present embodiment will be briefly described. The manufacturing method of the magnetic sensor device 100 includes a step of forming a first chip 2, a step of forming a second chip 3, and a step of mounting the first and second chips 2 and 3 on a support 4.

[0122] Each of the step of forming the first chip 2 and the step of forming the second chip 3 includes a step of forming a plurality of MR elements 50 and a step of forming a plurality of magnetic field generators 70.

[0123] In the step of forming a plurality of MR elements 50, first, a plurality of initial MR elements that will later become the plurality of MR elements 50 are formed. Each of the plurality of initial MR elements includes an initial magnetization fixing layer that will later become the magnetization fixing layer 52, a free layer 54, a gap layer 53, and an antiferromagnetic layer 51.

[0124] Next, using a laser beam and an external magnetic field including a component in a predetermined direction, the magnetization direction of the initial magnetization fixing layer is fixed in the above-mentioned predetermined direction. For example, in a plurality of initial MR elements that will later become the first and third resistance portions R11 and R13 of the first detection circuit 10, while applying an external magnetic field in the Y direction, the plurality of initial MR elements are irradiated with a laser beam. The external magnetic field in the Y direction can be divided into a component in the U direction and a component in a direction orthogonal to the U direction. When the irradiation of the laser beam is completed, the magnetization direction of the initial magnetization fixing layer is fixed in the U direction. As a result, the initial magnetization fixing layer becomes the magnetization fixing layer 52, and the initial MR element becomes the first MR element 50A.

[0125] Also, in a plurality of initial MR elements that will later become the plurality of first MR elements 50A constituting the second and fourth resistance portions R12 and R14 of the first detection circuit 10, by using an external magnetic field in the -Y direction, the magnetization direction of the initial magnetization fixing layer of each of the plurality of initial MR elements can be fixed in the -U direction. In this way, a plurality of first MR elements 50A are formed. The plurality of second MR elements 50B and the plurality of third MR elements 50C are also formed by the same method as the plurality of first MR elements 50A.

[0126]

[0126] In the step of forming the plurality of magnetic field generators 70, first, a plurality of initial magnetic field generators that will later become the plurality of magnetic field generators 70 are formed. Each of the plurality of initial magnetic field generators includes an initial ferromagnetic body portion that will later become the ferromagnetic body portion 72 and an antiferromagnetic body portion 71.

[0127] Next, using a laser beam and an external magnetic field including a component in a predetermined direction, the magnetization direction of the initial ferromagnetic body portion is fixed in the above-described predetermined direction. For example, in the plurality of initial magnetic field generators that will become the plurality of first magnetic field generators 70A and the plurality of second magnetic field generators 70B disposed in the first and second regions A21 and A22 of the first chip 2, while applying an external magnetic field in the X direction, the plurality of magnetic field generators are irradiated with a laser beam. When the irradiation of the laser beam is completed, the magnetization direction of the initial ferromagnetic body portion is fixed in the X direction. As a result, the initial ferromagnetic body portion becomes the ferromagnetic body portion 72, and the initial magnetic field generator becomes the first magnetic field generator 70A or the second magnetic field generator 70B. Also, in the plurality of initial magnetic field generators that will become the plurality of first magnetic field generators 70A and the plurality of second magnetic field generators 70B disposed in the third and fourth regions A23 and A24 of the first chip 2, by using an external magnetic field in the -X direction, the magnetization direction of the initial ferromagnetic body portion of each of the plurality of initial magnetic field generators can be fixed in the -X direction. In this way, the plurality of first magnetic field generators 70A and the plurality of second magnetic field generators 70B are formed. The plurality of third magnetic field generators 70C are also formed in the same manner as the plurality of first magnetic field generators 70A and the plurality of second magnetic field generators 70B.

[0128] As can be understood from the description of the method for manufacturing the magnetic sensor device 100 described above, in the present embodiment, the magnetization directions of the magnetization fixing layers 52 of the first MR element 50A, the magnetization fixing layers 52 of the second MR element 50B, and the magnetization fixing layers 52 of the third MR element 50C are fixed using laser light and an external magnetic field, respectively. In the present embodiment, further, the magnetization directions of the ferromagnetic portions 72 of the first magnetic field generator 70A, the magnetization directions of the ferromagnetic portions 72 of the second magnetic field generator 70B, and the magnetization directions of the ferromagnetic portions 72 of the third magnetic field generator 70C are fixed using laser light and an external magnetic field, respectively.

[0129] Here, the intensity of the laser light used to fix the magnetization direction of the ferromagnetic portion 72 is referred to as the intensity of the laser light for the ferromagnetic portion 72. The intensity of the laser light for the ferromagnetic portion 72 may be smaller than the intensity of the laser light used to fix the magnetization direction of the magnetization fixing layer 52. Further, the intensity of the laser light for the ferromagnetic portion 72 is preferably an intensity such that a change in the magnetoresistance change rate (hereinafter referred to as the MR ratio), which is the ratio of the magnetoresistance change with respect to the resistance of the MR element 50, is suppressed. For example, the intensity of the laser light for the ferromagnetic portion 72 is preferably an intensity such that the change in the MR ratio is suppressed within 10%, and more preferably an intensity such that the change in the MR ratio is suppressed within 5% or within 3%. Note that the MR ratio may increase or decrease when the ferromagnetic portion 72 is irradiated with the laser light.

[0130] Next, the operation and effects of the magnetic sensor 1 according to the present embodiment will be described. In the present embodiment, the ferromagnetic portions 72 and the antiferromagnetic portions 71 of each of the plurality of first magnetic field generators 70A are laminated in a direction intersecting the first inclined surface 203a. Here, consider the case where the ferromagnetic portion 72 and the antiferromagnetic portion 71 of the first magnetic field generator 70A are laminated in a direction parallel to the Z direction. In this case, if at least one of the first MR element 50A and the first magnetic field generator 70A is displaced from the designed position due to manufacturing variations, the relative positional relationship between the free layer 54 of the first MR element 50A and the ferromagnetic portion 72 of the first magnetic field generator 70A will be displaced, and as a result, a problem will occur in that the intensity and direction of the magnetic field applied to the first MR element 50A by the first magnetic field generator 70A will change.

[0131] On the other hand, in the present embodiment, the ferromagnetic portions 72 and the antiferromagnetic portions 71 of each of the plurality of first magnetic field generators 70A are laminated in a direction intersecting the first inclined surface 203a. Thus, according to the present embodiment, even when at least one of the first MR element 50A and the first magnetic field generator 70A is displaced from the designed position due to manufacturing variations, it is possible to suppress a large displacement in the relative positional relationship between the free layer 54 of the first MR element 50A and the ferromagnetic portion 72 of the first magnetic field generator 70A. Thereby, according to the present embodiment, it is possible to suppress variations in the magnetic field applied to the first MR element 50A by the first magnetic field generator 70A.

[0132] The above description of the first MR element 50A and the first magnetic field generator 70A also applies to the second MR element 50B and the second magnetic field generator 70B. According to the present embodiment, it is possible to suppress variations in the magnetic field applied to the second MR element 50B by the second magnetic field generator 70B.

[0133] In this embodiment, the free layer 54 is disposed ahead of the magnetization fixed layer 52 in the third direction D3 (see FIG. 16). Further, the ferromagnetic portion 72 is disposed ahead of the antiferromagnetic portion 71 in the third direction D3 (see FIG. 16). Therefore, according to this embodiment, the free layer 54 can be brought closer to the ferromagnetic portion 72 as compared with the case where the magnetization fixed layer 52 is disposed ahead of the free layer 54 in the third direction D3. Thereby, according to this embodiment, the intensity of the magnetic field applied from the magnetic field generator 70 to the free layer 54 can be increased.

[0134] [Second Embodiment] Next, with reference to FIGS. 19 and 20, a second embodiment of the present invention will be described. FIGS. 19 and 20 are cross-sectional views showing a part of the first chip 2 in this embodiment.

[0135] In this embodiment, the convex surface 203c of the insulating layer 203 is a semi-cylindrical curved surface formed by moving in a direction parallel to the X direction in a curved shape (arch shape). Therefore, in this embodiment, the first inclined surface 203a becomes a curved surface. The first MR element 50A is curved along the curved surface (the first inclined surface 203a). Even in this case, for the sake of convenience, the direction of magnetization of the magnetization fixed layer 52 of the first MR element 50A is defined as a linear direction. Similarly, in this embodiment, the second inclined surface 203b becomes a curved surface. The second MR element 50B is curved along the curved surface (the second inclined surface 203b). Even in this case, for the sake of convenience, the direction of magnetization of the magnetization fixed layer 52 of the second MR element 50B is defined as a linear direction.

[0136] The insulating layer 203 further has flat surfaces existing around the plurality of convex surfaces 203c. The plurality of convex surfaces 203c protrude in the Z direction from the flat surface. Further, the plurality of convex surfaces 203c are arranged at a predetermined interval so that a flat surface is formed between two adjacent convex surfaces 203c.

[0137] As shown in FIG. 20, in the first magnetic field generator 70A, the antiferromagnetic body portion 71 and the ferromagnetic body portion 72 are laminated in a direction intersecting the first inclined surface 203a. This direction may be the normal direction of the portion of the first inclined surface 203a that exists below the first magnetic field generator 70A. Further, the lower surface of the first MR element 50A has a shape along the first inclined surface 203a, that is, a curved surface. The lower surface of the first magnetic field generator 70A has a shape along the first inclined surface 203a (curved surface), and at least a part thereof has substantially the same shape as the lower surface of the first MR element 50A.

[0138] In the second magnetic field generator 70B, the antiferromagnetic body portion 71 and the ferromagnetic body portion 72 are laminated in a direction intersecting the second inclined surface 203b. This direction may be the normal direction of the portion of the second inclined surface 203b that exists below the second magnetic field generator 70B. Further, the lower surface of the second MR element 50B has a shape along the second inclined surface 203b, that is, a curved surface. The lower surface of the second magnetic field generator 70B has a shape along the second inclined surface 203b (curved surface), and at least a part thereof has substantially the same shape as the lower surface of the second MR element 50B.

[0139] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0140] [Third Embodiment] Next, with reference to FIG. 21, a third embodiment of the present invention will be described. FIG. 21 is a plan view showing the MR element 50 and the magnetic field generator 70 in this embodiment.

[0141] In this embodiment, each of the plurality of MR elements 50 includes a plurality of laminated films. The configuration of each of the plurality of laminated films is the same as the configuration of the MR element 50 in the first embodiment. In the example shown in FIG. 21, the MR element 50 includes two laminated films 501 and 502. The two laminated films 501 and 502 are arranged between two magnetic field generators 70 adjacent in the first direction D1. Further, the two laminated films 501 and 502 are connected in parallel by the lower electrode 61 and the upper electrode 62.

[0142] Here, among the plurality of laminated films included in each of the plurality of MR elements 50, the laminated film located at the end in the second direction D2 is referred to as the first specific laminated film, and the laminated film located at the end in the direction opposite to the second direction D2 is referred to as the second specific laminated film. The dimension of the magnetic field generator 70 in the direction parallel to the second direction D2 is larger than the distance from the end of the first specific laminated film in the second direction D2 to the end in the direction opposite to the second direction D2 of the second specific laminated film.

[0143] When the MR element 50 shown in FIG. 21 is the first MR element 50A, the two laminated films 501 and 502 are arranged along a direction intersecting the longitudinal direction (X direction) of the first inclined surface 203a (see FIGS. 8 and 10). When the MR element 50 shown in FIG. 21 is the second MR element 50B, the two laminated films 501 and 502 are arranged along a direction intersecting the longitudinal direction (X direction) of the second inclined surface 203b (see FIGS. 8 and 10).

[0144] Other configurations, operations, and effects in the present embodiment are the same as those in the first or second embodiment.

[0145] [Fourth Embodiment] Next, with reference to FIGS. 22 and 23, a fourth embodiment of the present invention will be described. FIG. 22 is a side view showing the MR element 50 and the magnetic field generator 70 in the present embodiment. FIG. 23 is a plan view showing the MR element 50 and the magnetic field generator 70 in the present embodiment.

[0146] In the present embodiment, the plurality of magnetic field generators 70 are arranged above the MR element 50. In the example shown in FIG. 22, a part of the plurality of magnetic field generators 70 is in contact with the upper electrode 62. However, the plurality of magnetic field generators 70 do not have to be in contact with the upper electrode 62.

[0147] The MR element 50 is disposed between two specific magnetic field generators 70 that are arranged at positions separated from each other in the first direction. At least one other magnetic field generator 70 is disposed between the two specific magnetic field generators 70. In the examples shown in FIGS. 22 and 23, the number of the other magnetic field generators 70 is two. The other magnetic field generators 70 overlap the MR element 50 when viewed from above. The two specific magnetic field generators 70 may or may not overlap the MR element 50 when viewed from above.

[0148] Other configurations, operations, and effects in this embodiment are the same as those in any of the first to third embodiments.

[0149] [Fifth Embodiment] Next, with reference to FIG. 24, a fifth embodiment of the present invention will be described. FIG. 24 is a plan view showing the MR element 50 and the magnetic field generator 70 in this embodiment.

[0150] In this embodiment, the dimension of the magnetic field generator 70 in the direction parallel to the second direction D2 is smaller than the dimension of the magnetic field generator 70 in the direction parallel to the first direction D1. Other configurations, operations, and effects in this embodiment are the same as those in any of the first to fourth embodiments.

[0151] [Sixth Embodiment] Next, with reference to FIG. 25, a sixth embodiment of the present invention will be described. FIG. 25 is a plan view showing the MR element 50 and the magnetic field generator 70 in this embodiment.

[0152] In this embodiment, each of the plurality of MR elements 50 is disposed between two adjacent magnetic field generators 70 in the second direction D2. The dimension of the magnetic field generator 70 in the direction parallel to the first direction D1 is larger than the dimension of the MR element 50 in the direction parallel to the first direction D1.

[0153] When the MR element 50 shown in FIG. 25 is the first MR element 50A and the magnetic field generator 70 shown in FIG. 25 is the first magnetic field generator 70A, the two first magnetic field generators 70A arranged on both sides of one first MR element 50A in the direction parallel to the second direction D2 are both arranged above one first inclined surface 203a (see FIGS. 8 and 11).

[0154] When the MR element 50 shown in FIG. 25 is the second MR element 50B and the magnetic field generator 70 shown in FIG. 25 is the second magnetic field generator 70B, the two second magnetic field generators 70B arranged on both sides of one second MR element 50B in the direction parallel to the second direction D2 are both arranged above one second inclined surface 203b (see FIGS. 8 and 11).

[0155] Other configurations, operations, and effects in this embodiment are the same as those in the first or second embodiment.

[0156] [Seventh Embodiment] Next, with reference to FIG. 26, a seventh embodiment of the present invention will be described. FIG. 26 is a side view showing the magnetic field generator 70 in this embodiment.

[0157] In this embodiment, the magnetic field generator 70 includes, in addition to the antiferromagnetic body portion 71 and the ferromagnetic body portion 72, an antiferromagnetic body portion 73 that is in contact with the upper surface of the ferromagnetic body portion 72 and is exchange-coupled with the ferromagnetic body portion 72. As the antiferromagnetic material forming the antiferromagnetic body portion 73, for example, the same antiferromagnetic material as the antiferromagnetic body portion 71 is used. The antiferromagnetic body portion 71 and the antiferromagnetic body portion 73 may be formed of the same antiferromagnetic material.

[0158] Other configurations, operations, and effects in this embodiment are the same as those in any of the first to sixth embodiments.

[0159] [Eighth Embodiment] Next, referring to FIG. 27, the eighth embodiment of the present invention will be described. FIG. 27 is a perspective view showing the configuration of a current sensor system including a magnetic sensor according to the present embodiment.

[0160] The magnetic sensor 401 according to the present embodiment is used as a current sensor that detects the value of a detection target current flowing through a conductor. FIG. 27 shows an example in which the conductor through which the detection target current flows is a bus bar 402. The magnetic sensor 401 is disposed in the vicinity of the bus bar 402. Hereinafter, the detection target current will be denoted as the target current Itg. A magnetic field 403 is generated around the bus bar 402 by the target current Itg. The magnetic sensor 401 is disposed at a position where the magnetic field 403 is applied. In the present embodiment, the target magnetic field is the magnetic field 403.

[0161] In the present embodiment, as shown in FIG. 27, the X direction, the Y direction, and the Z direction are defined. In FIG. 27, the direction in which the target current Itg flows is defined as the X direction.

[0162] In particular, in the present embodiment, the magnetic sensor 401 is disposed at a position where it can detect the Y-direction component and the Z-direction component of the magnetic field 403. The configuration of the magnetic sensor 401 is the same as the configuration of the first chip 2 in the first embodiment.

[0163] Note that the configuration of the magnetic sensor 401 may be the same as the configuration of the second chip 3 in the first embodiment. In this case, the magnetic sensor 401 is disposed at a position where it can detect the X-direction component of the magnetic field 403.

[0164] Other configurations, operations, and effects in the present embodiment are the same as those in any of the first to seventh embodiments.

[0165] Note that the present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the magnetic sensor of the present invention may be an integrated unit of a plurality of chips.

[0166] As described above, the magnetic sensor of the present invention includes a support member having at least one inclined surface inclined with respect to a reference plane, at least one magnetic detection element disposed on the at least one inclined surface and configured to detect a target magnetic field, and at least one magnetic field generator disposed on the at least one inclined surface and configured to generate a magnetic field applied to the at least one magnetic detection element. The at least one magnetic field generator includes a ferromagnetic portion and an antiferromagnetic portion that is in contact with the ferromagnetic portion and exchange-coupled with the ferromagnetic portion. The ferromagnetic portion and the antiferromagnetic portion are laminated in a direction intersecting the at least one inclined surface.

[0167] In the magnetic sensor of the present invention, each of the ferromagnetic portion and the antiferromagnetic portion may have a lower surface that faces the at least one inclined surface and is inclined with respect to the reference plane.

[0168] Further, in the magnetic sensor of the present invention, the at least one magnetic detection element may include a plurality of magnetic layers laminated in a direction intersecting the at least one inclined surface.

[0169] Further, in the magnetic sensor of the present invention, the at least one magnetic detection element may have a first lower surface having a shape along the at least one inclined surface. The at least one magnetic field generator may have a second lower surface having a shape along the at least one inclined surface and at least a part of which has substantially the same shape as the first lower surface.

[0170] Also, in the magnetic sensor of the present invention, at least one inclined surface may have a shape that is long in a direction parallel to the reference plane when viewed from a direction perpendicular to the reference plane. At least one magnetic detection element may have a shape that is long along the longitudinal direction of at least one inclined surface. At least one magnetic detection element may include a specific magnetic detection element. At least one magnetic field generator may include two specific magnetic field generators arranged on both sides in the longitudinal direction of a specific magnetic detection element with respect to the specific magnetic detection element. At least one magnetic field generator may include a plurality of magnetic field generators arranged along the longitudinal direction of at least one inclined surface.

[0171] Also, in the magnetic sensor of the present invention, at least one magnetic field generator may include a first magnetic field generator and a second magnetic field generator. The ferromagnetic body portion of the first magnetic field generator may have a first magnetization. The ferromagnetic body portion of the second magnetic field generator may have a second magnetization. The first magnetization may include a component in a first direction. The second magnetization may include a component in a second direction different from the first direction. The first magnetic field generator and the second magnetic field generator may not be arranged on the same plane.

[0172] Also, in the magnetic sensor of the present invention, at least one magnetic detection element may include a first magnetic detection element and a second magnetic detection element. The first magnetic detection element and the second magnetic detection element may not be arranged on the same plane.

[0173] Also, in the magnetic sensor of the present invention, at least one magnetic detection element may be at least one magnetoresistive element. At least one magnetoresistive element may include a magnetization-fixed layer having a magnetization with a fixed direction, a free layer having a magnetization whose direction can change according to a target magnetic field, and a gap layer arranged between the magnetization-fixed layer and the free layer. The magnetization-fixed layer may be arranged between at least one inclined surface and the gap layer.

[0174] In the magnetic sensor of the present invention, at least one inclined surface may include a specific inclined surface facing in a direction inclined with respect to each of the reference plane and the direction perpendicular to the reference plane. The specific inclined surface may have a shape that is long in a direction parallel to the reference plane when viewed from a direction perpendicular to the reference plane. At least one magnetic detection element may include two laminated films arranged on the specific inclined surface and aligned along a direction intersecting the longitudinal direction of the specific inclined surface.

[0175] Further, the magnetic sensor of the present invention may further include a power supply terminal, a ground terminal, a first output terminal, a second output terminal, a first resistance portion provided between the power supply terminal and the first output terminal, a second resistance portion provided between the ground terminal and the first output terminal, a third resistance portion provided between the ground terminal and the second output terminal, and a fourth resistance portion provided between the power supply terminal and the second output terminal. At least one magnetic detection element may include a plurality of first magnetic detection elements arranged in the first region and constituting the first resistance portion, a plurality of second magnetic detection elements arranged in the second region and constituting the second resistance portion, a plurality of third magnetic detection elements arranged in the third region and constituting the third resistance portion, and a plurality of fourth magnetic detection elements arranged in the fourth region and constituting the fourth resistance portion. The at least one magnetic field generating body may be a plurality of magnetic field generating bodies. The plurality of magnetic field generating bodies may be divided and arranged in the first region, the second region, the third region, and the fourth region. Among the first region, the second region, the third region, and the fourth region, each ferromagnetic body portion of the plurality of magnetic field generating bodies arranged in two regions may have a first magnetization. Among the first region, the second region, the third region, and the fourth region, each ferromagnetic body portion of the plurality of magnetic field generating bodies arranged in the other two regions may have a second magnetization. The first magnetization may include a component in a first direction. The second magnetization may include a component in a second direction opposite to the first direction.

[0176] Further, in the magnetic sensor of the present invention, at least one inclined surface may have a shape that is long in a direction parallel to the reference plane when viewed from a direction perpendicular to the reference plane, and may include a first inclined surface and a second inclined surface that face in different directions. At least one magnetic detection element may include a plurality of first magnetic detection elements arranged on the first inclined surface and a plurality of second magnetic detection elements arranged on the second inclined surface. At least one magnetic field generator may include a plurality of first magnetic field generators arranged on the first inclined surface and a plurality of second magnetic field generators arranged on the second inclined surface. The plurality of first magnetic detection elements may constitute a first detection circuit that detects a component in a first direction inclined with respect to each of the reference plane and the direction perpendicular to the reference plane in the target magnetic field and generates a first detection signal. The plurality of second magnetic detection elements may constitute a second detection circuit that detects a component in a second direction inclined with respect to each of the reference plane and the direction perpendicular to the reference plane in the target magnetic field and generates a second detection signal. The magnetic sensor of the present invention may further include another support member having a flat surface, a plurality of third magnetic detection elements arranged on the flat surface, and a plurality of third magnetic field generators arranged on the flat surface and generating a magnetic field applied to the plurality of third magnetic detection elements. The plurality of third magnetic detection elements may constitute a third detection circuit that detects a component in a third direction parallel to the reference plane in the target magnetic field and generates a third detection signal. The target magnetic field may be geomagnetism.

[0177] Further, in the magnetic sensor of the present invention, the target magnetic field may be a magnetic field generated by a detection target current flowing through a conductor.

Description of Reference Numerals

[0178] 1... Magnetic sensor, 2... First chip, 3... Second chip, 4... Support, 6, 7... Adhesive, 10... First detection circuit, 20... Second detection circuit, 30... Third detection circuit, 40... Processor, 50... MR element, 50A... First MR element, 50B... Second MR element, 50C... Third MR element, 51... Antiferromagnetic layer, 52... Magnetization fixing layer, 53... Gap layer, 54... Free layer, 61, 61A, 61A, 61B... Lower electrode, 62, 62A, 62A, 62B... Upper electrode, 70... Magnetic field generator, 70A... First magnetic field generator, 70B... Second magnetic field generator, 70C... Third magnetic field generator, 71... Antiferromagnetic body part, 72... Ferromagnetic body part, 100... Magnetic sensor device, 201, 301... Substrate, 201a, 301a... Upper surface, 202~207, 302~306... Insulating layer, 203a... First inclined surface, 203b... Second inclined surface, 203c... Convex surface.

Claims

1. A support member having at least one inclined surface inclined with respect to a reference plane, at least one lower electrode, at least one magnetic detection element disposed on the at least one lower electrode on the at least one inclined surface and configured to detect a target magnetic field, at least one upper electrode disposed on the at least one magnetic detection element, at least one magnetic field generator disposed between the at least one lower electrode and the at least one upper electrode on the at least one inclined surface and configured to generate a magnetic field applied to the at least one magnetic detection element, the at least one magnetic field generator includes a ferromagnetic portion and an antiferromagnetic portion that is in contact with the ferromagnetic portion and exchange-coupled with the ferromagnetic portion, the ferromagnetic portion and the antiferromagnetic portion are laminated in a direction intersecting the at least one inclined surface, the at least one magnetic detection element is at least one magnetoresistive effect element, the at least one magnetoresistive effect element includes a magnetization-fixed layer having a magnetization with a fixed direction, a free layer having a magnetization whose direction can change according to the target magnetic field, and a gap layer disposed between the magnetization-fixed layer and the free layer, the at least one lower electrode has an elongated shape, a magnetic sensor, wherein at least a part of the free layer overlaps at least a part of the ferromagnetic portion when viewed from the longitudinal direction of the at least one lower electrode.

2. The magnetic sensor according to claim 1, wherein each of the ferromagnetic portion and the antiferromagnetic portion has a lower surface facing the at least one inclined surface and inclined with respect to the reference plane.

3. The magnetic sensor according to claim 1, wherein the at least one magnetic detection element includes a plurality of magnetic layers laminated in a direction intersecting the at least one inclined surface.

4. The at least one inclined surface has an elongated shape in a direction parallel to the reference plane when viewed from a direction perpendicular to the reference plane, The magnetic sensor according to claim 1, wherein the at least one magnetic detection element has an elongated shape along the longitudinal direction of the at least one inclined surface.

5. The at least one magnetic detection element includes a specific magnetic detection element. The magnetic sensor according to claim 4, wherein the at least one magnetic field generator includes two specific magnetic field generators arranged on both sides in the longitudinal direction of the specific magnetic detection element with respect to the specific magnetic detection element.

6. The magnetic sensor according to claim 4, wherein the at least one magnetic field generator includes a plurality of magnetic field generators arranged along the longitudinal direction of the at least one inclined surface.

7. The at least one magnetic field generator includes a first magnetic field generator and a second magnetic field generator, the ferromagnetic part of the first magnetic field generator has a first magnetization, the ferromagnetic part of the second magnetic field generator has a second magnetization, the first magnetization includes a component in a first direction, the magnetic sensor according to claim 1, wherein the second magnetization includes a component in a second direction different from the first direction.

8. The at least one magnetic field generator includes a first magnetic field generator and a second magnetic field generator, the magnetic sensor according to claim 1, wherein the first magnetic field generator and the second magnetic field generator are not arranged on the same plane.

9. The at least one magnetic detection element includes a first magnetic detection element and a second magnetic detection element, the magnetic sensor according to claim 1, wherein the first magnetic detection element and the second magnetic detection element are not arranged on the same plane.

10. The at least one inclined surface includes a specific inclined surface inclined in a direction inclined with respect to each of the reference plane and a direction perpendicular to the reference plane, the specific inclined surface has a shape that is long in a direction parallel to the reference plane when viewed from a direction perpendicular to the reference plane, the magnetic sensor according to claim 1, wherein the at least one magnetic detection element includes two laminated films arranged on the specific inclined surface and arranged along a direction intersecting the longitudinal direction of the specific inclined surface.

11. Furthermore, a power supply terminal, a ground terminal, a first output terminal, a second output terminal, a first resistance part provided between the power supply terminal and the first output terminal, a second resistance part provided between the ground terminal and the first output terminal, a third resistance part provided between the ground terminal and the second output terminal, and a fourth resistance part provided between the power supply terminal and the second output terminal. The at least one magnetic detection element includes a plurality of first magnetic detection elements disposed in a first region and constituting the first resistance portion, a plurality of second magnetic detection elements disposed in a second region and constituting the second resistance portion, a plurality of third magnetic detection elements disposed in a third region and constituting the third resistance portion, and a plurality of fourth magnetic detection elements disposed in a fourth region and constituting the fourth resistance portion. The at least one magnetic field generator is a plurality of magnetic field generators. The plurality of magnetic field generators are divided and disposed in the first region, the second region, the third region, and the fourth region. Among the first region, the second region, the third region, and the fourth region, each ferromagnetic body portion of the plurality of magnetic field generators disposed in two regions has a first magnetization. Among the first region, the second region, the third region, and the fourth region, each ferromagnetic body portion of the plurality of magnetic field generators disposed in the other two regions has a second magnetization. The first magnetization includes a component in a first direction. The magnetic sensor according to claim 1, wherein the second magnetization includes a component in a second direction opposite to the first direction.

12. Each of the at least one inclined surface has a shape that is long in a direction parallel to the reference plane when viewed from a direction perpendicular to the reference plane, and includes a first inclined surface and a second inclined surface facing in different directions. The at least one magnetic detection element includes a plurality of first magnetic detection elements disposed on the first inclined surface and a plurality of second magnetic detection elements disposed on the second inclined surface. The at least one magnetic field generator includes a plurality of first magnetic field generators disposed on the first inclined surface and a plurality of second magnetic field generators disposed on the second inclined surface. The plurality of first magnetic detection elements constitute a first detection circuit that detects a component in a first direction inclined with respect to each of the reference plane and a direction perpendicular to the reference plane in the target magnetic field and generates a first detection signal. The magnetic sensor according to claim 1, wherein the plurality of second magnetic detection elements constitute a second detection circuit that detects a component in a second direction inclined with respect to each of the reference plane and a direction perpendicular to the reference plane in the target magnetic field and generates a second detection signal.

13. Furthermore, another support member having a flat surface a plurality of third magnetic detection elements disposed on the flat surface; a plurality of third magnetic field generators that are disposed on the flat surface and generate a magnetic field applied to the plurality of third magnetic detection elements; The magnetic sensor according to claim 12, wherein the plurality of third magnetic detection elements constitute a third detection circuit that detects a component in a third direction parallel to the reference plane among the target magnetic fields and generates a third detection signal. **Claim 14** The magnetic sensor according to claim 13, wherein the target magnetic field is geomagnetism. **Claim 15** The magnetic sensor according to claim 1, wherein the target magnetic field is a magnetic field generated by a detection target current flowing through a conductor.

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