Atomic layer deposition apparatus

Abstract

The present invention relates to an atomic layer deposition apparatus having a reaction chamber (1) arranged in a vacuum chamber and a fixed gas manifold assembly (3) fixedly provided in the atomic layer deposition apparatus and arranged to supply gas to the reaction chamber (1) from outside the vacuum chamber. The reaction chamber (1) is a mobile reaction chamber arranged movably with respect to the vacuum chamber and with respect to the fixed gas manifold assembly (3). The atomic layer deposition apparatus further comprises a connection mechanism (4) connecting the mobile reaction chamber (1) and the fixed gas manifold assembly (3). The connection mechanism (4) comprises a flexible outer flange assembly (5) surrounding the fixed gas manifold assembly (3) and a first connection surface (6) connecting with a second connection surface (11) of the reaction chamber (1).

Description

Technical Field

[0001] Field of the Invention The present invention relates to an atomic layer deposition apparatus, and more particularly to an atomic layer deposition apparatus defined in the preamble of independent claim 1.

Background Art

[0002] Background of the Invention In prior art atomic layer deposition apparatuses, the reaction chamber is usually stationary, and the gas manifold is fixedly connected to the reaction chamber. However, although there are also movable reaction chambers, manual connection by the user is required for the gas connection between the reaction chamber and the gas manifold.

[0003] The present invention relates to a large-scale atomic layer deposition apparatus in which the length of the equipment exceeds 4 meters and the width of the substrate processed in the reaction chamber can exceed 1 meter. Therefore, the diameters of the supply pipe and the discharge pipe can also reach 250 mm. The piping components of this size are very heavy and are placed inside large equipment, making it difficult to clean or replace them when they are soiled.

Summary of the Invention

[0004] Summary of the Invention An object of the present invention is to provide an atomic layer deposition apparatus that solves the above problems.

[0005] The object of the present invention is achieved by an atomic layer deposition apparatus characterized by being described in the independent claims. Preferred embodiments of the present invention are disclosed in the dependent claims.

[0006] The present invention is based on the idea of providing a flexible connection (or a telescopic connection, or a movable connection, a flexible connection) between the reaction chamber and the fixed gas manifold assembly. The flexible connection part reacts to the movement of the reaction chamber and keeps the connection between the reaction chamber and the fixed gas manifold assembly firm.

[0007] The atomic layer deposition apparatus according to the present invention includes a reaction chamber disposed in a vacuum chamber, and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and arranged to supply gas from the outside of the vacuum chamber to the reaction chamber. The reaction chamber is a movable reaction chamber movably arranged with respect to the vacuum chamber and with respect to the fixed gas manifold assembly. The atomic layer deposition apparatus further includes a connection mechanism (or connection structure or connection arrangement, a connection arrangement) that couples the movable reaction chamber to the fixed gas manifold assembly. The connection mechanism includes a flexible outer flange assembly surrounding the fixed gas manifold assembly and a first connection surface connected to a second connection surface of the reaction chamber.

[0008] According to the present invention, the flexible outer flange assembly is coaxially arranged around the fixed gas manifold assembly such that the flexible outer flange assembly and the fixed gas manifold assembly have a coaxial clearance forming a gas channel therebetween.

[0009] According to the present invention, the flexible outer flange assembly includes a first connection portion having a first connection surface, a second connection portion attached to the fixed gas manifold assembly, and a flexible connection portion connecting both the first connection portion and the second connection portion such that the first connection portion is movable with respect to the second connection portion.

[0010] According to the present invention, the flexible connection portion includes an expansion member connected to the first connection portion and the second connection portion and surrounding the fixed gas manifold assembly. The expansion member extends between the first connection portion and the second connection portion, and together they form a gas-tight wall around the fixed gas manifold assembly. The expansion member is arranged to contract when the first connection surface and the second connection surface are both connected and to expand when there is no pressing connection between the fixed gas manifold structure and the reaction chamber.

[0011] According to the present invention, the expansion member has a bellows structure.

[0012] According to the present invention, the flexible connection part is connected to the first connection part and the second connection part, and further includes a flexible part separated from the expansion member. The flexible part is arranged to expand and contract in response to the contact between the first connection surface of the flexible outer flange assembly and the second connection surface of the reaction chamber, and is adapted to keep the contact tight.

[0013] According to the present invention, the flexible part includes preloaded springs extending between the first connection part and the second connection part.

[0014] According to the present invention, the flexible component is arranged to provide a vertical movement to the first connection surface. Alternatively, the flexible part is arranged to provide an inclined movement to the first connection surface. Alternatively, the flexible component is arranged to provide both a vertical movement and an inclined movement to the first connection surface.

[0015] According to the present invention, the fixed gas manifold assembly includes a housing structure surrounding a rigid gas pipe extending into the housing structure from the gas unit to the end face of the housing structure.

[0016] According to the present invention, the vacuum chamber and the fixed gas manifold assembly are fixed together. The fixed gas manifold assembly is arranged to extend from the outside of the vacuum chamber through the wall of the vacuum chamber into the vacuum chamber. The connection mechanism is provided in the vacuum chamber.

[0017] According to the present invention, an atomic layer deposition apparatus includes a plurality of fixed gas manifold assemblies fixedly provided to the atomic layer deposition apparatus. The first fixed gas manifold assembly is arranged to supply gas from the outside of the vacuum chamber to the reaction chamber, and the second fixed gas manifold assembly is arranged to discharge gas from the reaction chamber to the outside of the vacuum chamber. The atomic layer deposition apparatus further includes a gas source for supplying gas to the reaction chamber through the first fixed gas manifold assembly and a discharge device for discharging gas from the reaction chamber through the second fixed gas discharge manifold assembly. A connection mechanism is provided connected to each of the fixed gas manifold assemblies to couple the movable reaction chamber to the fixed gas manifold assembly.

[0018] An advantage of the present invention is that, even though the reaction chamber is movably arranged with respect to the fixed gas manifold assembly, the connection mechanism having the flexible outer flange assembly can strengthen the connection between the two. A further advantage of the present invention is that the outer surface of the fixed gas manifold structure can be kept clean by a gas channel provided in a coaxial clearance formed between the fixed gas manifold assembly capable of supplying an inert gas such as nitrogen and the connection mechanism.

[0019] With reference to the accompanying drawings, the present invention will be described in detail by way of specific embodiments.

Brief Description of the Drawings

[0020]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0021] Detailed Description of the Invention FIG. 1 shows details of an atomic layer deposition apparatus according to the present invention, which has a reaction chamber 1 disposed in a vacuum chamber. The reaction chamber 1 includes a supply unit connected from a fixed gas manifold assembly 3. The reaction chamber 1 shown in FIG. 1 is disposed on rails so as to be movable with respect to the vacuum chamber. Thereby, the reaction chamber 1 can be moved out of the vacuum chamber and then moved back into the vacuum chamber. Therefore, the reaction chamber 1 is also movable with respect to the fixed gas manifold assembly 3 provided in connection with the vacuum chamber. Therefore, the reaction chamber 1 is a movable reaction chamber 1. The atomic layer deposition apparatus further includes a connection facility 4 that connects the movable reaction chamber 1 and the fixed gas manifold assembly 3. Since the movable reaction chamber 1 moves relative to the vacuum chamber and the fixed gas manifold stays at a fixed position connected to the vacuum chamber, the connection between the movable reaction chamber 1 and the fixed gas manifold 3 is through a connection facility 4 including a flexible outer flange assembly 5 surrounding the fixed gas manifold assembly and a first connection surface 6 connected to the second connection surface 11 of the reaction chamber 1. When the connection between the fixed gas manifold assembly 3 and the reaction chamber 1 is made, the flexible outer flange assembly 5 provides vertical movement of the first connection surface 6 and tilting movement of the first connection surface 6 with respect to the reaction chamber 1. The reaction chamber 1 is too heavy to be aligned according to the fixed gas manifold assembly 3. On the other hand, the fixed gas manifold assembly cannot be moved because it is fixed to the atomic layer deposition apparatus. Since the first connection surface 6 is pressed toward the second connection surface 11 of the reaction chamber 1, the connection between the fixed gas manifold assembly 3 and the reaction chamber 1 is firm and gas does not leak outside the connection to the vacuum chamber. The fixed gas manifold assembly 3 is fixedly provided in the atomic layer deposition apparatus and is arranged to supply gas from a gas source provided outside the vacuum chamber to the reaction chamber 1.

[0022] FIG. 2 shows the connection mechanism 4 according to the present invention at a position where the first connection surface 6 is separated from the second connection surface 11 of the reaction chamber 1. In other words, FIG. 2 shows a state of the atomic layer deposition apparatus in which the connection between the reaction chamber 1 and the fixed gas manifold assembly 3 is not yet formed, and the precursor supplied from the fixed gas manifold assembly 3 leaks into the vacuum chamber. FIG. 2 shows details of the connection mechanism 4 of the atomic layer deposition apparatus provided to form a connection between the reaction chamber 1 and the fixed gas manifold assembly 3. The connection mechanism 4 includes a first connection surface 6 arranged to be connected to the second connection surface 11 of the reaction chamber 1. The first connection surface 6 is movable toward the second connection surface 11 when the movable reaction chamber 1 is provided at a predetermined position in the vacuum chamber. The first connection surface 6 moves in response to the movement of the flexible outer flange assembly 5 surrounding the fixed gas manifold assembly 3. The flexible outer flange assembly 5 includes a first connection portion 51 having the first connection surface 6, a second connection portion 52 attached to the fixed gas manifold assembly 3, and a flexible connection portion 53 connecting both the first connection portion 51 and the second connection portion 52 such that the first connection portion 51 is movable relative to the second connection portion 52. The flexible connection portion 53 provides vertical and tilting movements of the first connection surface 6 with respect to the second connection surface 11 when alignment between the reaction chamber 1 and the fixed gas manifold structure is required.

[0023] Furthermore, FIG. 2 shows that the flexible connection portion 53 is connected to the first connection portion 51 and the second connection portion 52 and includes an expansion member 53a that surrounds the fixed gas manifold assembly 3. The expansion member 53a extends between the first connection portion 51 and the second connection portion 52, and together they form a gas-tight wall around the fixed gas manifold assembly 3. In other words, a part of the first connection portion 51 and a part of the second connection portion 52 that surround the vicinity closest to the fixed gas manifold assembly, together with the expansion member 53a, form the outer wall of the gas channel 7 that extends around the fixed gas manifold assembly 3. The gas channel 7 is for supplying an inert gas that prevents the precursor gas from entering from the connection point between the fixed gas manifold assembly and the reaction chamber 1 back to the structure of the gas manifold assembly 3. The expansion member 53a surrounds the fixed gas manifold assembly 3 to provide an airtight structure together with the first connection portion 51 and the second connection portion 52. In the present embodiment of the present invention, the expansion member 53a has a bellows structure.

[0024] The flexible connection portion 53 is connected to the first connection portion 51 and the second connection portion 52 and further includes a flexible portion 53b spaced apart from the expansion member 53a. This flexible portion 53b is arranged to expand and contract in response to contact in order to keep the contact between the first connection surface of the flexible outer flange assembly 5 and the second connection surface 11 of the reaction chamber 1 tight. In the present embodiment of the present invention, the flexible portion 53b is a spring. Although only two springs are shown in the figure, the flexible outer flange assembly 5 is provided coaxially around the fixed gas manifold assembly 3. Therefore, the flexible portions 53b are also provided at regular intervals around the fixed gas manifold assembly 3.

[0025] Figure 3 shows the connection mechanism according to the present invention at another position where the first connection surface 6 and the second connection surface 11 face each other so that the connection between the reaction chamber 2 and the fixed gas manifold assembly 3 is established and the flow path connection to the vacuum chamber between the reaction chamber 2 and the fixed gas manifold assembly 3 is closed. The gas channel 7 formed by the coaxial clearance between the fixed gas manifold assembly 3 and the connection mechanism 4 is arranged to supply an inert gas around the fixed gas manifold assembly 3 in order to arrange a diffusion barrier that excludes film deposition from the external structure. The precursor gas is supplied through the gas channel of the fixed gas manifold assembly 3. When the first surface 6 of the connection mechanism 4 and the second surface 11 of the reaction chamber 2 are firmly connected to each other, the flexible outer flange assembly 5 surrounding the fixed gas manifold assembly 3 operates, and the flexible portion 53b presses the first surface 6 toward the second surface 11 to keep the connection between the surfaces firm. The expansion member 53a adapts to the expansion or contraction of the flexible portion 53b so that the gas channel 7 around the fixed gas manifold assembly 3 is airtight.

[0026] Figure 4 shows the connection mechanism 4 according to the present invention in more detail. The connection mechanism 4 includes a first connection surface 6 and a flexible outer flange assembly 5. The flexible outer flange assembly 5 includes a first connection portion 51, a second connection portion 52, and a flexible connection portion 53 between the first connection portion 51 and the second connection portion 52. The first connection surface 6 is provided on the first connection portion 51. The second connection portion 52 is attached to the fixed gas manifold assembly 3, and the flexible connection portion 53 is connected to the second connection portion 52 that connects the first connection portion 51 and the second connection portion 52 through the flexible connection portion 53. When the flexible connection portion 53 expands and contracts, the first connection surface 6 moves according to the movement of the flexible connection portion 53. Further, the flexible connection portion 53 enables tilting movement. Thereby, when the second connection surface 11 of the reaction chamber 1 is inclined with respect to the first connection surface 6 and contacts the first connection surface 6, the first connection surface 6 is inclined according to the position of the second connection surface 11, so that the connection between the first connection surface 6 and the second connection surface 11 becomes tight.

[0027] FIG. 4 shows a preload spring that forms the flexible portion 53b. On the other hand, in order to show that both the first connection portion 51 and the second connection portion 52 have a surface on which the expansion portion is disposed, the expansion member 53a is omitted from the drawing.

[0028] The present invention has been described with reference to the illustrated embodiments. However, the present invention is not limited to the above embodiments at all and can be modified within the scope described in the claims. Preferred embodiments of the present invention are as follows. [1] An atomic layer deposition apparatus, The atomic layer deposition apparatus, A reaction chamber (1) disposed in a vacuum chamber, A fixed gas manifold assembly (3) fixedly provided to the atomic layer deposition apparatus and arranged to supply gas from the outside of the vacuum chamber to the reaction chamber (1) And having The reaction chamber (1) is a movable reaction chamber (1) movably arranged with respect to the vacuum chamber and with respect to the fixed gas manifold assembly (3), The atomic layer deposition apparatus, A connection mechanism (4) for connecting the movable reaction chamber (1) to the fixed gas manifold assembly (3) Further comprising The connection mechanism (4) - A flexible outer flange assembly (5) surrounding the fixed gas manifold assembly (3), and - A first connection surface (6) connected to the second connection surface (11) of the reaction chamber (1) An atomic layer deposition apparatus, characterized by comprising. [2] The flexible outer flange assembly (5) is coaxially arranged around the fixed gas manifold assembly (3) such that the flexible outer flange assembly (5) and the fixed gas manifold assembly (3) have a coaxial clearance forming a gas channel (7) between the flexible outer flange assembly (5) and the fixed gas manifold assembly (3). The atomic layer deposition apparatus according to [1]. [3] The flexible outer flange assembly (5) A first connection portion (51) having a first connection surface (6), A second connection portion (52) attached to the fixed gas manifold assembly (3), and A flexible connection portion (53) connecting both the first connection portion (51) and the second connection portion (52) such that the first connection portion (51) is movable with respect to the second connection portion (52) An atomic layer deposition apparatus according to [1] or [2], characterized by comprising. [4] The flexible connection portion (53) is arranged to provide movement in a direction perpendicular to the first connection surface (6); or The flexible connection portion (53) is arranged to provide movement in an inclined direction with respect to the first connection surface (6); or The flexible connection portion (53) is arranged to provide movement in a direction perpendicular to and in an inclined direction with respect to the first connection surface (6) An atomic layer deposition apparatus according to [3], characterized by. [5] The flexible connection portion (53) Connect the first connection part (51) and the second connection part (52), and an expansion member (53a) that surrounds the fixed gas manifold assembly (3) and include The expansion member (53a) extends between the first connection part (51) and the second connection part (52), and together forms an airtight wall around the fixed gas manifold assembly (3) The atomic layer deposition apparatus according to [3], characterized in that [6] The atomic layer deposition apparatus according to [5], characterized in that the expansion member (53a) has a bellows structure [7] The flexible connection part (53) is A flexible part (53b) that connects the first connection part (51) and the second connection part (52) and is separated from the expansion member (53) and further includes The flexible part (53b) is arranged to expand and contract according to the contact in order to keep the contact between the first connection surface (6) of the flexible outer flange assembly (5) and the second connection surface (11) of the reaction chamber (1) tight The atomic layer deposition apparatus according to [5] or [6], characterized in that [8] The atomic layer deposition apparatus according to [7], characterized in that the flexible part (53b) includes a preload spring extending between the first connection surface and the second connection surface (52) [9] The flexible part (53b) is arranged to provide movement in a direction perpendicular to the first connection surface (6); or The flexible part (53b) is arranged to provide movement in an inclined direction with respect to the first connection surface (6); or The flexible part (53b) is arranged to provide movement in a direction perpendicular to and an inclined direction with respect to the first connection surface (6) The atomic layer deposition apparatus according to [7] or [8], characterized in that

[10] The fixed gas manifold assembly (3) includes a housing structure that surrounds a rigid gas pipe extending from a gas unit to an end surface of the housing structure within the housing structure, according to any one of [1] to [9]

[11] The vacuum chamber and the fixed gas manifold assembly (3) are both fixed, The fixed gas manifold assembly (3) is arranged to extend from the outside of the vacuum chamber through the wall of the vacuum chamber into the vacuum chamber, The connection mechanism (4) is provided within the vacuum chamber The atomic layer deposition apparatus according to any one of [1] to

[10] , characterized in that

[12] The atomic layer deposition apparatus includes a plurality of fixed gas manifold assemblies (3) fixedly provided to the atomic layer deposition apparatus The first fixed gas manifold assembly (3) is arranged to supply gas from the outside of the vacuum chamber to the reaction chamber (1), The second fixed gas manifold assembly (3) is arranged to discharge gas from the reaction chamber (1) to the outside of the vacuum chamber, The atomic layer deposition apparatus, A gas source for supplying gas to the reaction chamber (1) via the first fixed gas manifold assembly (3), and An exhaust device for exhausting gas from the reaction chamber (1) via the second fixed gas exhaust manifold assembly Further comprising, The connection mechanism (4) is provided by connecting to each of the fixed gas manifold assemblies that connect the movable reaction chamber (1) and the fixed gas manifold assembly The atomic layer deposition apparatus according to any one of [1] to

[11] , characterized in that.

Claims

1. An atomic layer deposition apparatus, wherein the atomic layer deposition apparatus comprises a reaction chamber (1) disposed within a vacuum chamber, and a fixed gas manifold assembly (3) fixedly provided to the atomic layer deposition apparatus and arranged to supply gas from outside the vacuum chamber to the reaction chamber (1). The reaction chamber (1) is a movable reaction chamber (1) movably arranged with respect to the vacuum chamber and with respect to the fixed gas manifold assembly (3). The atomic layer deposition apparatus further comprises a connection mechanism (4) for connecting the movable reaction chamber (1) to the fixed gas manifold assembly (3). The connection mechanism (4) comprises: - a flexible outer flange assembly (5) surrounding the fixed gas manifold assembly (3), and - a first connection surface (6) connecting to a second connection surface (11) of the reaction chamber (1). The flexible outer flange assembly (5) comprises: - a first connection portion (51) having the first connection surface (6), - a second connection portion (52) attached to the fixed gas manifold assembly (3), and - a flexible connection portion (53) connecting both the first connection portion (51) and the second connection portion (52) such that the first connection portion (51) is movable relative to the second connection portion (52), wherein the flexible connection portion (53) provides vertical movement of the first connection surface (6) with respect to the second connection surface (11). The atomic layer deposition apparatus is characterized by the above.

2. The flexible outer flange assembly (5) is coaxially arranged around the fixed gas manifold assembly (3) such that the flexible outer flange assembly (5) and the fixed gas manifold assembly (3) have a coaxial clearance forming a gas channel (7) therebetween. The atomic layer deposition apparatus according to claim 1 is characterized by this.

3. The flexible connection portion (53) is arranged to provide movement in a direction perpendicular to the first connection surface (6); or The flexible connection portion (53) is arranged to provide movement in an inclined direction with respect to the first connection surface (6); or The flexible connection portion (53) is arranged to provide movement in a direction perpendicular to and in an inclined direction with respect to the first connection surface (6). The atomic layer deposition apparatus according to claim 1 is characterized by this.

4. The flexible connection portion (53) ​ A first connection part (51) and a second connection part (52) are connected, and an expansion member (53a) surrounding the fixed gas manifold assembly (3) is provided, The expansion member (53a) extends between the first connection part (51) and the second connection part (52) and together forms an airtight wall around the fixed gas manifold assembly (3). The atomic layer deposition apparatus according to claim 1, characterized in that.

5. The atomic layer deposition apparatus according to claim 4, characterized in that the expansion member (53a) has a bellows structure.

6. The flexible connection part (53) has a flexible part (53b) that connects the first connection part (51) and the second connection part (52) and is separated from the expansion member (53). and further comprises The flexible part (53b) is arranged to expand and contract according to the contact in order to keep the contact between the first connection surface (6) of the flexible outer flange assembly (5) and the second connection surface (11) of the reaction chamber (1) tight. The atomic layer deposition apparatus according to claim 4 or 5, characterized in that.

7. The atomic layer deposition apparatus according to claim 6, characterized in that the flexible part (53b) comprises a preload spring extending between the first connection surface and the second connection surface (52).

8. The flexible part (53b) is arranged to provide movement in a direction perpendicular to the first connection surface (6); or The flexible part (53b) is arranged to provide movement in an inclined direction with respect to the first connection surface (6); or The flexible part (53b) is arranged to provide movement in a direction perpendicular to and an inclined direction with respect to the first connection surface (6). The atomic layer deposition apparatus according to claim 6 or 7, characterized in that.

9. The fixed gas manifold assembly (3) comprises a housing structure that surrounds a rigid gas pipe extending from a gas unit to an end face of the housing structure within the housing structure, according to any one of claims 1 to 8. The atomic layer deposition apparatus described.

10. The vacuum chamber and the fixed gas manifold assembly (3) are both fixed, The fixed gas manifold assembly (3) is arranged to extend from the outside of the vacuum chamber through the wall of the vacuum chamber into the vacuum chamber, The connection mechanism (4) is provided within the vacuum chamber. The atomic layer deposition apparatus according to any one of claims 1 to 9, characterized in that.

11. The atomic layer deposition apparatus comprises a plurality of fixed gas manifold assemblies (3) fixedly provided to the atomic layer deposition apparatus. The first fixed gas manifold assembly (3) is arranged to supply gas from the outside of the vacuum chamber to the reaction chamber (1), The second fixed gas manifold assembly (3) is arranged to discharge gas from the reaction chamber (1) to the outside of the vacuum chamber, The atomic layer deposition apparatus, A gas source for supplying gas to the reaction chamber (1) via the first fixed gas manifold assembly (3), and An exhaust device for exhausting gas from the reaction chamber (1) via the second fixed gas exhaust manifold assembly further includes, The connection mechanism (4) is provided by connecting to each of the fixed gas manifold assemblies that connect the movable reaction chamber (1) and the fixed gas manifold assembly The atomic layer deposition apparatus according to any one of claims 1 to 10, characterized in that.

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