Spectral filter, image sensor including the same, and electronic device

The spectroscopic filter design with adjustable central wavelengths and improved transmittance addresses the miniaturization challenge of conventional image sensors, achieving a compact and efficient imaging solution.

JP7715546B2Active Publication Date: 2025-07-30SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
JP2021106313
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-05-11
Filing Date
2021-06-28
Publication Date
2025-07-30
Estimated Expiration
2041-06-28

AI Technical Summary

Technical Problem

Conventional image sensors using spectroscopic filters are large in volume and heavy, making them unsuitable for miniaturization efforts in integrated circuits.

Method used

A spectroscopic filter design featuring first and second unit filters with separate metal reflection layers and cavities, arranged in one- or two-dimensional arrays, allowing for adjustable central wavelengths and improved transmittance through dielectric layers and microlenses.

Benefits of technology

Enables miniaturization of image sensors by providing a spectroscopic filter with wide bandwidth and high transmittance, suitable for various wavelength regions from ultraviolet to near-infrared.

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Abstract

To provide a spectral filter, and image sensor and electronic device comprising the spectral filter.SOLUTION: A spectral filter is provided, comprising a first unit filter having a center wavelength in a first wavelength range, and a second unit filter having a center wavelength in a second wavelength range, where the first unit filter comprises a plurality of first metal reflective layers and at least one first cavity provided between the plurality of first metal reflective layers, and the second unit filter comprises a plurality of second metal reflective layers and at least one second cavity provided between the plurality of second metal reflective layers.SELECTED DRAWING: Figure 2
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Description

Technical Field

[0001] The present invention relates to a spectroscopic filter, an image sensor including the same, and an electronic device.

Background Art

[0002] An image sensor using a spectroscopic filter is one of the important optical devices in the optical field. Conventional image sensors include various optical elements and are large in volume and heavy. In recent years, due to the requirement for miniaturization of image sensors, research has been carried out to simultaneously embody integrated circuits and optical elements on one semiconductor chip.

Summary of the Invention

Problems to be Solved by the Invention

[0003] Exemplary embodiments provide a spectroscopic filter, an image sensor including the same, and an electronic device.

Means for Solving the Problems

[0004] On one side, at least one first unit filter having a central wavelength in a first wavelength region, and at least one second unit filter having a central wavelength in a second wavelength region, and the first unit filter includes a plurality of first metal reflection layers provided separately from each other and including a first metal, and at least one first cavity provided between the plurality of first metal reflection layers, and the second unit filter includes a plurality of second metal reflection layers provided separately from each other and including a second metal different from the first metal, and at least one second cavity provided between the plurality of second metal reflection layers, and a spectroscopic filter is provided.

[0005] The at least one first unit filter and the at least one second unit filter are arranged in a one-dimensional or two-dimensional array on a plane.

[0006] The central wavelength of the first wavelength region is shorter than the central wavelength of the second wavelength region. The first metal reflection layer may include Al, Ag, Au, or TiN, and the second metal reflection layer may include Cu, Ag, Au, or TiN different from the first metal reflection layer.

[0007] The at least one first unit filter may constitute a first filter array including a plurality of first unit filters having different central wavelengths, and the at least one second unit filter may constitute a second filter array including a plurality of second unit filters having different central wavelengths.

[0008] The central wavelength of the first unit filter can also be adjusted by changing the thickness or effective refractive index of the first cavity, and the central wavelength of the second unit filter can also be adjusted by changing the thickness or effective refractive index of the second cavity.

[0009] The first unit filter may further include first and second dielectric layers provided below and above the first cavity, and the second unit filter may further include third and fourth dielectric layers provided below and above the second cavity.

[0010] Each of the first, second, third, and fourth dielectric layers can have a single-layer or multi-layer structure.

[0011] Each of the first, second, third, and fourth dielectric layers can have a thickness of 10 nm to 20000 nm.

[0012] The thickness or effective refractive index of each of the first and second dielectric layers is also adjusted according to the center wavelength of the first unit filter, and the thickness or effective refractive index of each of the third and fourth dielectric layers is also adjusted according to the center wavelength of the second unit filter.

[0013] The spectroscopic filter may further include a plurality of microlenses provided in at least one of the first and second unit filters.

[0014] The spectroscopic filter may further include a color filter disposed on the same plane as the at least one first and second unit filters.

[0015] The spectroscopic filter may further include an additional filter provided in the at least one first and second unit filters and transmitting only a specific wavelength band. The additional filter may include a color filter or a broadband filter.

[0016] Among the at least one first and second unit filters, a short-wavelength absorption filter may be provided in a part, and a long-wavelength cut-off filter may be provided in another part.

[0017] On the other hand, at least one first unit filter having a center wavelength in a first wavelength region, and at least one second unit filter having a center wavelength in a second wavelength region, and the first unit filter includes a plurality of metal reflection layers provided separately from each other, and at least one first cavity provided between the plurality of metal reflection layers, the second unit filter includes a plurality of Bragg reflection layers provided separately from each other, and at least one second cavity provided between the plurality of Bragg reflection layers, and a spectroscopic filter is provided.

[0018] The at least one first unit filter and the at least one second unit filter are arranged in a one-dimensional or two-dimensional pattern on a plane.

[0019] The central wavelength of the first unit filter is also adjusted by changing the thickness or effective refractive index of the first cavity, and the central wavelength of the second unit filter is also adjusted by changing the thickness or effective refractive index of the second cavity.

[0020] The spectral filter may further include a plurality of microlenses provided on the at least one first and second unit filters.

[0021] The spectral filter may further include a color filter disposed on the same plane as the at least one first and second unit filters.

[0022] The spectral filter may further include an additional filter provided on the at least one first and second unit filters and transmitting only a specific wavelength band.

[0023] On another aspect, a spectral filter, and a pixel array that receives light transmitted through the spectral filter, are included, the spectral filter includes at least one first unit filter having a central wavelength in a first wavelength region, and at least one second unit filter having a central wavelength in a second wavelength region, the first unit filter includes a plurality of first metal reflective layers provided apart from each other and including a first metal, and at least one first cavity provided between the plurality of first metal reflective layers, the second unit filter includes a plurality of second metal reflective layers provided apart from each other and including a second metal different from the first metal, and at least one second cavity provided between the plurality of second metal reflective layers, and an image sensor is provided.

[0024] The first unit filter may further include first and second dielectric layers provided at the lower and upper portions of the first cavity, and the second unit filter may further include third and fourth dielectric layers provided at the lower and upper portions of the second cavity.

[0025] The spectroscopic filter may further include a plurality of microlenses provided on the at least one first and second unit filters.

[0026] The spectroscopic filter may further include a color filter disposed on the same plane as the at least one first and second unit filters.

[0027] The spectroscopic filter may further include an additional filter provided on the at least one first and second unit filters and transmitting only a specific wavelength band.

[0028] The image sensor may further include a timing controller, a row decoder, and an output circuit.

[0029] In still another aspect, An electronic device including the above-described image sensor is provided.

[0030] The electronic device includes a mobile phone, a smartphone, a tablet, a smart tablet, a digital camera, a camcorder, a notebook computer, a TV, a smart TV, a smart refrigerator, a security camera, a robot, or a medical camera.

[0031] In still another aspect, a spectroscopic filter, and a pixel array that receives light transmitted through the spectroscopic filter, wherein the spectroscopic filter includes at least one first unit filter having a central wavelength in a first wavelength region, and At least one second unit filter having a central wavelength in the second wavelength region, The first unit filter includes a plurality of metal reflection layers provided apart from each other and at least one first cavity provided between the plurality of metal reflection layers. An image sensor is provided that includes the second unit filter including a plurality of Bragg reflection layers provided apart from each other and at least one second cavity provided between the plurality of Bragg reflection layers.

[0032] The spectral filter may further include a plurality of microlenses provided on the at least one first and second unit filters.

[0033] The spectral filter may further include a color filter disposed on the same plane as the at least one first and second unit filters.

[0034] The spectral filter may further include an additional filter provided on the at least one first and second unit filters and transmitting only a specific wavelength band.

[0035] The image sensor may further include a timing controller, a row decoder, and an output circuit.

[0036] In yet another aspect, An electronic device including the above-described image sensor is provided.

[0037] The electronic device includes a mobile phone, a smartphone, a tablet, a smart tablet, a digital camera, a camcorder, a notebook computer, a TV, a smart TV, a smart refrigerator, a security camera, a robot, or a medical camera.

[0038] In yet another aspect, A first unit filter having a first central wavelength within a first wavelength region, ​It includes a second unit filter having a second center wavelength within a second wavelength region and provided horizontally adjacent to the first unit filter. The first unit filter includes two layers of first metal reflection layers that are vertically spaced apart from each other and contain a first metal. It further includes a first cavity provided between the two layers of the first metal reflection layers. The second unit filter includes two layers of second metal reflection layers that are vertically spaced apart from each other and contain a second metal different from the first metal. A spectroscopic filter is provided, which further includes a second cavity provided between the two layers of the second metal reflection layers.

Brief Description of the Drawings

[0039]

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DETAILED DESCRIPTION OF THE INVENTION

[0040] Hereinafter, exemplary embodiments will be described in detail with reference to the attached drawings. In the following drawings, the same reference numerals denote the same components, and on the drawings, the size of each component may be exaggerated for clarity and convenience of explanation. On the other hand, the embodiments described below are merely exemplary, and various modifications are possible from these embodiments.

[0041] Hereinafter, what is described as "upper" or "above" includes not only those immediately above, below, left, or right in contact, but also those above, below, left, or right without contact. Singular expressions include plural expressions unless clearly specified otherwise in the context. Also, when a certain part "includes" a certain component, it means that it further includes other components without excluding other components unless otherwise stated to the contrary.

[0042] The use of the term "the foregoing" and similar directive terms applies to both singular and plural. For the steps constituting a method, if the order is not clearly described or there is no contrary description, the steps may be performed in an appropriate order and are not necessarily limited to the described order.

[0043] Also, terms such as "… part" and "module" described in the specification mean a unit that processes at least one function or operation, which may be embodied by hardware or software, or by a combination of hardware and software.

[0044] The connection of lines or connecting members between components shown in the drawings illustratively represents a functional connection and / or a physical or circuit connection, and in an actual device, it is represented as various functional connections, physical connections, or circuit connections that may be alternative or additional.

[0045] The use of all examples or exemplary terms is merely for explaining the technical idea in detail, and the scope is not limited by such examples or exemplary terms unless limited by the claims.

[0046] FIG. 1 is a schematic block diagram of an image sensor according to an exemplary embodiment.

[0047] Referring to FIG. 1, the image sensor 1000 includes a spectroscopic filter 1100, a pixel array 4100, a timing controller 4010, a row decoder 4020, and an output circuit 4030. The image sensor includes, but is not limited to, a CCD (charge coupled device) image sensor or a CMOS (complementary metal oxide semiconductor) image sensor.

[0048] The spectroscopic filter 1100 transmits light in different wavelength regions and includes a plurality of unit filters arranged two-dimensionally. The pixel array 4100 includes a plurality of pixels that sense light of different wavelengths transmitted through the plurality of unit filters. Specifically, the pixel array 4100 includes pixels arranged two-dimensionally along a plurality of rows and a plurality of columns. The row decoder 4020 selects one of the rows of the pixel array 4100 in response to a row address signal output from the timing controller 4010. The output circuit 4030 outputs a light sensing signal in column units from a plurality of pixels arranged along the selected row. To that end, the output circuit 4030 includes a column decoder and an analog-to-digital converter (ADC; It includes an (analog to digital converter). For example, the output circuit 4030 includes a plurality of ADCs respectively arranged for each column between the column decoder and the pixel array 4100, or one ADC arranged at the output end of the column decoder. The timing controller 4010, the row decoder 4020, and the output circuit 4030 can be implemented by one chip or separate chips. A processor for processing the video signal output via the output circuit 4030 may be implemented by one chip together with the timing controller 4010, the row decoder 4020, and the output circuit 4030. The pixel array 4100 includes a plurality of pixels that sense (receive light) light of different wavelengths, where the arrangement of the pixels can be implemented in various ways.

[0049] Hereinafter, the spectral filter of the image sensor will be described in detail. FIG. 2 is a cross-sectional view of the spectral filter as seen along the line II-II' in FIG. 1.

[0050] Referring to FIGS. 1 and 2, the spectral filter 1100 includes a plurality of unit filters arranged in a one-dimensional or two-dimensional manner. FIG. 2 exemplarily shows cross-sections of six unit filters 111, 112, 113, 121, 122, 123.

[0051] The spectral filter 1100 may include first and second filter arrays 110, 120 arranged on a plane. The first and second filter arrays 110, 120 are arranged substantially on the same plane, but are not necessarily limited thereto. The first filter array 110 includes at least one unit filter having a central wavelength in the first wavelength region. Here, the first wavelength region can have a range of, for example, approximately 250 nm to 600 nm. However, this is merely exemplary, and in addition, the first wavelength region can have various wavelength ranges depending on the design conditions. FIG. 2 exemplarily shows a case where the first filter array 110 includes the first, second, and third unit filters 111, 112, 113.

[0052] The second filter array 120 includes at least one unit filter having a central wavelength in the second wavelength region. The second wavelength region is a wavelength region longer than the first wavelength region. For example, the second wavelength region can have a range of approximately 600 nm to 1100 nm. However, this is merely exemplary, and in addition, the second wavelength region can have various wavelength ranges depending on the design conditions. FIG. 2 exemplarily shows a case where the second filter array 120 includes the fourth, fifth, and sixth unit filters 121, 122, 123.

[0053] FIG. 2 shows a case where the first filter array 110 includes three unit filters 111, 112, 113 and the second filter array 120 includes three unit filters 121, 122, 123, but this is merely exemplary, and the number of unit filters constituting the first and second filter arrays 110, 120 can be variously deformed.

[0054] Each of the first, second, and third unit filters 111, 112, 113 constituting the first filter array 110 transmits a specific central wavelength within the first wavelength region, and cavities 141, 142, 143 provided adjacent to each other in the horizontal direction are provided between two layers of first metal reflection layers 131, 132 spaced apart from each other in the vertical direction, and can have a Fabry-Perot structure.

[0055] If light passes through the first metal reflection layers 131, 132 and is incident on the cavities 141, 142, 143, the light will reciprocate inside the cavities 141, 142, 143 between the first metal reflection layers 131, 132, and in the process, constructive interference and destructive interference will occur. Then, light having a specific central wavelength that satisfies the constructive interference condition is emitted outside the unit filters 111, 112, 113. Here, the wavelength band and central wavelength of the light passing through the unit filters 111, 112, 113 are also determined by the reflection bands of the first metal reflection layers 131, 132 and the characteristics of the cavities 141, 142, 143.

[0056] The first metal reflective layers 131 and 132 may contain a first metal capable of reflecting light in the first wavelength region. For example, the first metal includes Al, Ag, Au, TiN, etc. However, it is not limited thereto. The first metal reflective layers 131 and 132 are provided with a thickness of about several tens of nm, but this is merely exemplary. As a specific example, the first metal reflective layers 131 and 132 can have a thickness of approximately 10 nm to 30 nm.

[0057] The cavities 141, 142, and 143 provided between the first metal reflective layers 131 and 132 are resonant layers and may contain a dielectric material having a predetermined refractive index. For example, the average refractive index of a cavity having one transmission peak has a range of 1.4 to 3.5, and its thickness is in the range of approximately 20 nm to 500 nm. For example, when the center wavelength is in the range of approximately 350 nm to 600 nm, the thickness of the cavity is approximately 20 nm to 150 nm, and its refractive index is 1.4 to 3.5. When the center wavelength is in the range of approximately 600 nm to 1000 nm, the thickness of the cavity is approximately 80 nm to 250 nm, and its refractive index is 1.4 to 3.5. In a multi-mode cavity, the thickness of the cavity can be increased.

[0058] For example, the cavities 141, 142, and 143 include silicon, silicon oxide, silicon nitride, hafnium oxide, or titanium oxide, or a combination of these substances. For example, the cavities 141, 142, and 143 include a TiO2 / SiN multi-layer or a TiO2 / SiO2 pattern structure, but are not limited thereto.

[0059] The first, second, and third unit filters 111, 112, and 113 can have different central wavelengths within the first wavelength region. For this purpose, the first, second, and third unit filters 111, 112, and 113 include first, second, and third cavities 141, 142, and 143 with different thicknesses. In FIG. 2, an example is illustratively shown where the second cavity 142 is thicker than the first cavity 141, and the third cavity 143 is thicker than the second cavity 142. In that case, among the first, second, and third unit filters 111, 112, and 113, the third unit filter 113 can have the longest central wavelength, and the first unit filter 111 can have the shortest central wavelength. Also, depending on the thickness of the cavity, some unit filters can also have multiple central wavelengths.

[0060] Each of the fourth, fifth, and sixth unit filters 121, 122, and 123 that make up the second filter array 120 transmits a specific central wavelength within the second wavelength region and can have a Fabry - Perot structure in which cavities 161, 162, and 163 are provided between two layers of second metal reflection layers 151 and 152 spaced apart from each other. Here, the wavelength band and central wavelength of the light passing through the unit filters 121, 122, and 123 are also determined by the reflection bands of the second metal reflection layers 151 and 152 and the characteristics of the cavities 161, 162, and 163.

[0061] The second metal reflection layers 151 and 152 may include a second metal capable of reflecting light in the second wavelength region. For example, the second metal includes Cu, Ag, Au, or TiN, etc. However, it is not limited thereto. The second metal reflection layers 151 and 152 are provided with a thickness of about several tens of nm, but this is merely exemplary. As a specific example, the second metal reflection layers 151 and 152 can have a thickness of approximately 40 nm to 50 nm.

[0062] The second metal forming the second metal reflection layers 151 and 152 is also a metal different from the first metal forming the above-described first metal reflection layers 131 and 132. For example, when the first metal reflection layers 131 and 132 contain Al, the second metal reflection layers 151 and 152 contain Cu. Also, for example, when the first metal reflection layers 131 and 132 contain Al, the second metal reflection layers 151 and 152 can contain Ag. Also, for example, when the first metal reflection layers 131 and 132 contain Ag, the second metal reflection layers 151 and 152 contain Cu.

[0063] The cavities 161, 162, and 163 provided between the second metal reflection layers 151 and 152 are resonance layers and may contain a dielectric material having a predetermined refractive index. For example, the cavities 161, 162, and 163 contain silicon, silicon oxide, silicon nitride, hafnium oxide, or titanium oxide.

[0064] The cavities 161, 162, and 163 provided between the second metal reflection layers 151 and 152 contain the same material as the cavities 141, 142, and 143 provided between the first metal reflection layers 131 and 132. In that case, the thickness of the cavities 161, 162, and 163 provided between the second metal reflection layers 151 and 152 can be different from the thickness of the cavities 141, 142, and 143 provided between the first metal reflection layers 131 and 132. On the other hand, the cavities 161, 162, and 163 provided between the second metal reflection layers 151 and 152 can also contain a material different from the cavities 141, 142, and 143 provided between the first metal reflection layers 131 and 132. The thickness of the cavity also varies depending on the material of the metal reflection layer provided in the cavity. The thickness of the cavity can correspond to the skin depth of the material of the metal reflection layer. For example, the thickness of the cavity provided between Al metal reflection layers is thicker than that of the cavity provided between Cu metal reflection layers used in a unit filter having the same center wavelength.

[0065] The fourth, fifth, and sixth unit filters 121, 122, and 123 can have different center wavelengths within the second wavelength region. For this purpose, the fourth, fifth, and sixth unit filters 121, 122, and 123 include fourth, fifth, and sixth cavities 161, 162, and 163 with different thicknesses. In FIG. 2, an example is illustratively shown where the fifth cavity 162 is thicker than the fourth cavity 161, and the sixth cavity 163 is thicker than the fifth cavity 162. In that case, among the fourth, fifth, and sixth unit filters 121, 122, and 123, the sixth unit filter 123 can have the longest center wavelength, and the fourth unit filter 121 can have the shortest center wavelength. Also, depending on the thickness of the cavity, some unit filters can also have multiple center wavelengths.

[0066] As described above, by arranging on a plane the first filter array 110 in which cavities 141, 142, and 143 are provided between the first metal reflection layers 131 and 132 and the second filter array 120 in which cavities 161, 162, and 163 are provided between the second metal reflection layers 151 and 152, a spectroscopic filter having characteristics of a wide band (for example, a wavelength range from ultraviolet to near-infrared) including the first wavelength region and the second wavelength region can be realized.

[0067] FIG. 3A shows a unit filter 11 in which a TiO2 cavity is provided between Cu reflection layers. And FIG. 3B shows a unit filter 21 in which TiO2 dielectric layers are provided on the upper and lower parts of the structure shown in FIG. 3A, respectively.

[0068] FIG. 4 shows the transmission spectra of the unit filter 11 shown in FIG. 3A and the unit filter 21 shown in FIG. 3B. In FIG. 4, "A" shows the transmission spectrum of the unit filter 11 shown in FIG. 3A, and "B" shows the transmission spectrum of the unit filter 21 shown in FIG. 3B. Referring to FIG. 4, the unit filter 21 shown in FIG. 3B It can be seen that it has a relatively high transmittance.

[0069] In this way, by further providing TiO2 dielectric layers on the upper and lower parts of the structure in which a TiO2 cavity is provided between the Cu reflective layers, the unit filter 21 with improved transmittance can be realized. Here, the thickness of the TiO2 dielectric layer is also adjusted according to the center wavelength of the unit filter 21.

[0070] FIG. 5 is a cross-sectional view schematically showing a spectroscopic filter 1200 according to another exemplary embodiment.

[0071] Referring to FIG. 5, the first filter array 210 includes first, second, and third unit filters 211, 212, and 213 having the center wavelengths of the first wavelength region. And the second filter array 220 includes fourth, fifth, and sixth unit filters 221, 222, and 223 having the center wavelengths of the second wavelength region.

[0072] Each of the first, second, and third unit filters 211, 212, and 213 constituting the first filter array 210 includes two layers of first metal reflective layers 131 and 132 spaced apart from each other, cavities 141, 142, and 143 provided between the first metal reflective layers 131 and 132, and first and second dielectric layers 171 and 172 provided on the lower and upper parts of the cavities 141, 142, and 143, respectively. The first, second, and third unit filters 211, 212, and 213 include first, second, and third cavities 141, 142, and 143 with different thicknesses so as to have different center wavelengths within the first wavelength region. The first metal reflective layers 131 and 132, and the first, second, and third cavities 141, 142, and 143 are as described above.

[0073] The first dielectric layer 171 is provided under the first metal reflection layer 131, and the second dielectric layer 172 is provided above the first metal reflection layer 132. Here, the first and second dielectric layers 171 and 172 are for improving the transmittance of the first, second, and third unit filters 211, 212, and 213. The first and second dielectric layers 171 and 172 can have a single-layer structure. Each of the first and second dielectric layers 171 and 172 includes, for example, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high-refractive-index polymer, etc., but this is merely exemplary.

[0074] The thicknesses of the first and second dielectric layers 171 and 172 also vary depending on the center wavelengths of the first, second, and third unit filters 211, 212, and 213. FIG. 5 exemplarily shows a case where the thicknesses of the first and second dielectric layers 171 and 172 increase as the center wavelengths of the unit filters 211, 212, and 213 become longer. The thickness of each of the first and second dielectric layers 171 and 172 is approximately 10 nm to 20,000 nm, but is not limited thereto. For example, the thickness of each of the first and second dielectric layers 171 and 172 is approximately 10 nm to 2,000 nm.

[0075] Each of the fourth, fifth, and sixth unit filters 221, 222, and 223 constituting the second filter array 220 includes two layers of second metal reflection layers 151 and 152 spaced apart from each other, cavities 161, 162, and 163 provided between the second metal reflection layers 151 and 152, and third and fourth dielectric layers 181 and 182 provided below and above the cavities 161, 162, and 163, respectively. The fourth, fifth, and sixth unit filters 221, 222, and 223 include fourth, fifth, and sixth cavities 161, 162, and 163 with different thicknesses so as to have different center wavelengths within the second wavelength region. The second metal reflection layers 151 and 152, and the fourth, fifth, and sixth cavities 161, 162, and 163 are as described above.

[0076] The third dielectric layer 181 is provided below the second metal reflection layer 151, and the fourth dielectric layer 182 is provided above the second metal reflection layer 152. Here, the third and fourth dielectric layers 181 and 182 are for improving the transmittance of the fourth, fifth, and sixth unit filters 221, 222, and 223. The third and fourth dielectric layers 181 and 182 can have a single-layer structure. Each of the third and fourth dielectric layers 181 and 182, similar to the above-described first and second dielectric layers 171 and 172, includes, for example, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high-refractive-index polymer, but is not limited thereto.

[0077] The thicknesses of the third and fourth dielectric layers 181 and 182 also vary depending on the center wavelengths of the fourth, fifth, and sixth unit filters 221, 222, and 223. FIG. 5 exemplarily shows a case where the thicknesses of the third and fourth dielectric layers 181 and 182 increase as the center wavelengths of the unit filters 221, 222, and 223 become longer. The thickness of each of the third and fourth dielectric layers 181 and 182 is approximately 10 nm to 20000 nm, but is not limited thereto. For example, the thickness of each of the third and fourth dielectric layers 181 and 182 is approximately 10 nm to 2000 nm.

[0078] FIG. 6 shows the transmission spectrum of the spectroscopic filter 1200 shown in FIG. 5. Here, the first metal reflection layers 131 and 132 and the second metal reflection layers 151 and 152 are formed of Al and Cu, respectively, and the cavities 141, 142, 143, 161, 162, and 163 are formed of TiO2. And the first, second, third, and fourth dielectric layers 171, 172, 181, and 182 are all formed of TiO2. In FIG. 6, "C1" shows the transmission spectrum of the first filter array 210, and "C2" shows the transmission spectrum of the second filter array 220.

[0079] FIG. 7 is a cross-sectional view schematically showing a spectroscopic filter 1300 according to still another exemplary embodiment.

[0080] Referring to FIG. 7, the first filter array 310 includes at least one unit filter having a center wavelength in the first wavelength region. And the second filter array 320 includes at least one unit filter having a center wavelength in the second wavelength region.

[0081] For the sake of convenience, FIG. 7 exemplarily shows a case where the first filter array 310 includes one unit filter (the first unit filter 315) and the second filter array 320 includes one unit filter (the second unit filter 325). When each of the first and second filter arrays 310 and 320 includes a plurality of unit filters, the plurality of unit filters include cavities with different thicknesses.

[0082] The first unit filter 315 constituting the first filter array 310 includes two layers of first metal reflection layers 131 and 132 spaced apart from each other, a first cavity 145 provided between the first metal reflection layers 131 and 132, and first and second dielectric layers 371 and 372 provided at the lower and upper parts of the first cavity 145, respectively.

[0083] The first dielectric layer 371 is provided below the first metal reflection layer 131, and the second dielectric layer 372 is provided above the first metal reflection layer 132. The first and second dielectric layers 371 and 372 each include, but are not limited to, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high refractive index polymer, etc.

[0084] The first dielectric layer 371 can have a single-layer structure. However, it is not limited thereto. Rather, the first dielectric layer 371 can also have a multilayer structure (multiple layers). The second dielectric layer 372 can have a multilayer structure. For example, the second dielectric layer 372 can have a structure in which different first and second material layers 372a and 372b are alternately laminated. Here, the thickness and the number of layers of the material layers constituting the second dielectric layer 372 are also adjusted according to the center wavelength of the first unit filter 315. The second dielectric layer 372 can also include three or more different material layers.

[0085] The second unit filter 325 constituting the second filter array 320 includes two second metal reflection layers 151 and 152 spaced apart from each other, a second cavity 165 provided between the second metal reflection layers 151 and 152, and third and fourth dielectric layers 381 and 382 provided respectively below and above the second cavity 165.

[0086] The third dielectric layer 381 is provided below the second metal reflection layer 151, and the fourth dielectric layer 382 is provided above the second metal reflection layer 152. The third and fourth dielectric layers 381 and 382 include, but are not limited to, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high-refractive-index polymer, etc., similar to the first and second dielectric layers 371 and 372.

[0087] The third dielectric layer 381 can have a single-layer structure or a multilayer structure. The fourth dielectric layer 382 can have a multilayer structure. For example, the fourth dielectric layer 382 can have a structure in which different first and second material layers 382a and 382b are alternately laminated. Here, the thickness and the number of layers of the material layers constituting the fourth dielectric layer 382 are also adjusted according to the center wavelength of the second unit filter 325. The fourth dielectric layer 382 can also include three or more different material layers.

[0088] FIG. 8 shows the transmission spectrum of the spectral filter 1300 shown in FIG. 7. In FIG. 8, in the spectral filter 1300 shown in FIG. 7, the transmission spectrum is shown when the first filter array 310 includes seven unit filters having different center wavelengths and the second filter array 320 includes nine unit filters having different center wavelengths.

[0089] The first metal reflection layers 131 and 132 and the second metal reflection layers 151 and 152 are each formed of Al and Cu, and the cavities 145 and 165 are formed of a multilayer film of TiO2 and SiN. The first and third dielectric layers 371 and 381 are each formed of SiN, and the second and fourth dielectric layers 372 and 382 are each formed of a multilayer film of TiO2 and SiN. In FIG. 8, “D1” indicates the transmission spectrum of the first filter array 310, and “D2” indicates the transmission spectrum of the second filter array 320. Referring to FIG. 8, it can be seen that the spectral filter 1300 can achieve broadband characteristics and a high transmittance.

[0090] FIG. 9 is a cross-sectional view schematically showing a spectral filter 1400 according to still another exemplary embodiment. In FIG. 9, for convenience, an example is illustratively shown in which the first filter array 410 includes one unit filter (first unit filter 415) and the second filter array 420 includes one unit filter (second unit filter 425).

[0091] The first unit filter 415 constituting the first filter array 410 includes three mutually spaced first metal reflection layers 431, 432, and 433 and two first cavities 441 and 442 provided between the first metal reflection layers 431, 432, and 433.

[0092] The first metal reflection layers 431, 432, and 433 contain a first metal capable of reflecting light in the first wavelength region. The first cavities 441 and 442 contain a dielectric material such as, for example, silicon, silicon oxide, silicon nitride, hafnium oxide, or titanium oxide.

[0093] The second unit filter 425 that constitutes the second filter array 420 includes three second metal reflection layers 451, 452, and 453 that are separated from each other, and two second cavities 461 and 462 provided between the second metal reflection layers 451, 452, and 453.

[0094] The second metal reflection layers 451, 452, and 453 include a second metal capable of reflecting light in the second wavelength region. The second cavities 461 and 462 include a dielectric material such as, for example, silicon, silicon oxide, silicon nitride, hafnium oxide, or titanium oxide.

[0095] As described above, the case where the first unit filter 415 includes two cavities 441 and 442 and the second unit filter 425 includes two cavities 461 and 462 has been described. However, it is also possible that each of the first and second unit filters 415 and 425 includes three or more cavities. Further, as described above, the case where both the first and second unit filters 415 and 425 have a multi-cavity structure has been described. However, one of the first and second unit filters 415 and 425 can have a single-cavity structure and the other can have a multi-cavity structure.

[0096] FIG. 10 is a cross-sectional view schematically showing a spectroscopic filter 1500 according to still another exemplary embodiment. In FIG. 10, for the sake of convenience, an exemplary case is shown where the first filter array 510 includes one unit filter (first unit filter 515) and the second filter array 520 includes one unit filter (second unit filter 525).

[0097] Referring to FIG. 10, the first unit filter 515 that constitutes the first filter array 510 includes three mutually spaced first metal reflection layers 431, 432, 433, two first cavities 441, 442 provided between the first metal reflection layers 431, 432, 433, and first and second dielectric layers 571, 572 provided at the lower and upper portions of the first cavities 441, 442. The first metal reflection layers 431, 432, 433 and the first cavities 441, 442 are as described above.

[0098] The first dielectric layer 571 is provided below the first metal reflection layer 431, and the second dielectric layer 572 is provided above the first metal reflection layer 433. Here, the first and second dielectric layers 571, 572 are for improving the transmittance and can have a single-layer or multi-layer structure. The first and second dielectric layers 571, 572 include, for example, but are not limited to, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high-refractive-index polymer.

[0099] The second unit filter 525 that constitutes the second filter array 520 includes three mutually spaced second metal reflection layers 451, 452, 453, two second cavities 461, 462 provided between the second metal reflection layers 451, 452, 453, and third and fourth dielectric layers 581, 582 provided at the lower and upper portions of the second cavities 461, 462. The second metal reflection layers 451, 452, 453 and the second cavities 461, 462 are as described above.

[0100] The third dielectric layer 581 is provided below the second metal reflection layer 451, and the fourth dielectric layer 582 is provided above the second metal reflection layer 453. Here, the third and fourth dielectric layers 581, 582 can have a single-layer or multi-layer structure and include, for example, but are not limited to, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high-refractive-index polymer.

[0101] FIG. 11 is a cross-sectional view schematically showing a spectroscopic filter 1600 according to still another exemplary embodiment.

[0102] Referring to FIG. 11, the first filter array 610 includes at least one unit filter having a center wavelength in the first wavelength region, and the second filter array 620 includes at least one unit filter having a center wavelength in the second wavelength region. FIG. 11 exemplarily shows a case where the first filter array 610 includes first, second, and third unit filters 611, 612, 613, and the second filter array 620 includes fourth, fifth, and sixth unit filters 621, 622, 623.

[0103] Each of the first, second, and third unit filters 611, 612, 613 constituting the first filter array 610 includes two-layer first metal reflection layers 631, 632 provided separately from each other, and cavities 641, 642, 643 provided between the first metal reflection layers 631, 632. Since the first metal reflection layers 631, 632 are as described above, the description thereof is omitted.

[0104] The first, second, and third unit filters 611, 612, 613 can have different center wavelengths within the first wavelength region. For this purpose, the first, second, and third unit filters 611, 612, 613 include first, second, and third cavities 641, 642, 643 having different effective refractive indices. Each of the first, second, and third cavities 641, 642, 643 includes a first material layer and at least one second material layer disposed inside the first material layer and having a refractive index different from that of the first material layer.

[0105] FIG. 11 exemplarily shows a case where each of the first, second, and third cavities 641, 642, and 643 includes a first material layer and a plurality of second material layers arranged side by side perpendicular to the first metal reflection layer 631 inside the first material layer. Here, each of the first and second material layers includes, for example, silicon, silicon oxide, silicon nitride, or titanium oxide. The first material layer and the second material layer can have a relatively high contrast in order to adjust the effective refractive index of the cavity. As a specific example, the first material layer includes silicon oxide and the second material layer includes titanium oxide, but is not limited thereto.

[0106] The first, second, and third cavities 641, 642, and 643 can change the effective refractive index by adjusting the width of the second material layer. FIG. 11 exemplarily shows a case where the second material layer is provided so as to have a wider width from the first cavity 641 to the third cavity 643. For example, the pitch of the second material layer ranges from 100 nm to 300 nm, and the width of the second material layer is approximately 0, 20, 40, 60, 80, 100% of the pitch depending on the center wavelength of the unit filter. In that case, among the first, second, and third cavities 641, 642, and 643, the third cavity 643 can have the highest effective refractive index, and the first cavity 641 can have the lowest effective refractive index. Among the first, second, and third unit filters 611, 612, and 613, the third unit filter 613 can have the longest center wavelength, and the first unit filter 611 can have the shortest center wavelength. Also, depending on the thickness or effective refractive index of the cavity, some unit filters can have a plurality of center wavelengths.

[0107] Although the case where a plurality of second material layers are arranged perpendicular to the first metal reflection layer 631 has been described above, it is not limited thereto, and a plurality of second material layers can also be arranged side by side with the first metal reflection layer 631.

[0108] Each of the fourth, fifth, and sixth unit filters 621, 622, and 623 that constitute the second filter array 620 includes two layers of second metal reflection layers 651, 652 provided separately from each other and cavities 661, 662, 663 provided between the second metal reflection layers 651, 652. Since the second metal reflection layers 651, 652 are as described above, the description thereof is omitted.

[0109] The fourth, fifth, and sixth unit filters 621, 622, and 623 can have different center wavelengths within the second wavelength region. For this purpose, the fourth, fifth, and sixth unit filters 621, 622, and 623 include fourth, fifth, and sixth cavities 661, 662, and 663 having different effective refractive indices. Each of the fourth, fifth, and sixth cavities 661, 662, and 663 includes a first material layer and at least one layer of a second material layer that is disposed inside the first material layer and has a refractive index different from that of the first material layer.

[0110] FIG. 11 exemplarily shows a case where each of the fourth, fifth, and sixth cavities 661, 662, and 663 includes a first material layer and a plurality of second material layers that are arranged side by side perpendicular to the second metal reflection layer 651 inside the first material layer. Here, each of the first and second material layers includes, for example, silicon, silicon oxide, silicon nitride, or titanium oxide.

[0111] The fourth, fifth, and sixth cavities 661, 662, and 663 can change the effective refractive index by adjusting the width of the second material layer. FIG. 11 exemplarily shows a case where the second material layer is provided so as to have a wider width as it goes from the fourth cavity 661 to the sixth cavity 663. In that case, among the fourth, fifth, and sixth cavities 661, 662, and 663, the sixth cavity 663 can have the highest effective refractive index, and the fourth cavity 661 can have the lowest effective refractive index. Among the fourth, fifth, and sixth unit filters 621, 622, and 623, the sixth unit filter 623 can have the longest center wavelength, and the fourth unit filter 621 can have the shortest center wavelength. Also, depending on the thickness or effective refractive index of the cavity, some unit filters can also have a plurality of center wavelengths.

[0112] As described above, the case where both the first filter array 610 and the second filter array 620 have a single cavity structure has been exemplarily described. However, both the first filter array 610 and the second filter array 620 can also have a multi-cavity structure. Also, one of the first filter array 610 and the second filter array 620 can have a single cavity structure, and the other can have a multi-cavity structure.

[0113] FIG. 12 is a cross-sectional view schematically showing a spectroscopic filter 1700 according to still another exemplary embodiment. The spectroscopic filter 1700 shown in FIG. 12 is the same as the spectroscopic filter 1600 shown in FIG. 11, except that the cavity further includes an etching stop layer.

[0114] The first, second, and third unit filters 711, 712, 713 that make up the first filter array 710 include first, second, and third cavities 741, 742, 743 having different effective refractive indices. Here, each of the first, second, and third cavities 741, 742, 743 includes an etching stop layer 740a provided on the first metal reflection layer 631, a first material layer provided on the etching stop layer 740a, and at least one layer of a second material layer disposed inside the first material layer. Here, the etching stop layer 740a serves to make the patterning process for cavity formation easier. The etching stop layer 740a includes, for example, silicon oxide, titanium oxide, or hafnium oxide, but is not limited thereto.

[0115] The fourth, fifth, and sixth unit filters 721, 722, 723 that make up the second filter array 720 include fourth, fifth, and sixth cavities 761, 762, 763 having different effective refractive indices. Here, each of the fourth, fifth, and sixth cavities 761, 762, 763 includes an etching stop layer 760a provided on the second metal reflection layers 651, 652, a first material layer provided on the etching stop layer 760a, and at least one layer of a second material layer disposed inside the first material layer.

[0116] FIG. 13 is a cross-sectional view schematically showing a spectroscopic filter 1800 according to still another exemplary embodiment. The spectroscopic filter 1800 shown in FIG. 13 is similar to the spectroscopic filter 1700 shown in FIG. 12, except that first and second dielectric layers 871, 872 are provided below and above the first filter array 810, and third and fourth dielectric layers 881, 882 are provided below and above the second filter array 820.

[0117] Referring to FIG. 13, the first, second, and third unit filters 811, 812, 813 that make up the first filter array 810 each include two layers of first metal reflection layers 631, 632 spaced apart from each other, cavities 841, 842, 843 provided between the first metal reflection layers 631, 632, and first and second dielectric layers 871, 872 provided at the lower and upper portions of the cavities 841, 842, 843, respectively. The first, second, and third unit filters 811, 812, 813 include first, second, and third cavities 841, 842, 843 having different effective refractive indices so as to have different center wavelengths within the first wavelength region.

[0118] The first dielectric layer 871 is provided below the first metal reflection layer 631, and the second dielectric layer 872 is provided above the first metal reflection layer 632. Here, the first and second dielectric layers 871, 872 are for improving the transmittance of the first, second, and third unit filters 811, 812, 813.

[0119] Each of the first and second dielectric layers 871, 872 includes a first material layer and at least one second material layer disposed inside the first material layer and having a refractive index different from that of the first material layer. The first and second material layers include, for example, but are not limited to, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, or a high-refractive-index polymer. By changing the width of the second material layer according to the center wavelengths of the first, second, and third unit filters 811, 812, 813, the effective refractive indices of the first and second dielectric layers 871, 872 can be adjusted. The first and second dielectric layers 871, 872 may each further include an etching stop layer.

[0120] The fourth, fifth, and sixth unit filters 821, 822, 823 that make up the second filter array 820 each include two layers of second metal reflection layers 651, 652 spaced apart from each other, cavities 861, 862, 863 provided between the second metal reflection layers 651, 652, and third and fourth dielectric layers 881, 882 provided at the lower and upper portions of the cavities 861, 862, 863, respectively. The fourth, fifth, and sixth unit filters 821, 822, 823 include fourth, fifth, and sixth cavities 861, 862, 863 having different effective refractive indices so as to have different center wavelengths within the second wavelength region.

[0121] The third dielectric layer 881 is provided below the second metal reflection layer 651, and the fourth dielectric layer 822 is provided above the second metal reflection layer 652. Each of the third and fourth dielectric layers 881, 882 includes a first material layer and at least one second material layer disposed inside the first material layer and having a refractive index different from that of the first material layer. Here, by changing the width of the second material layer according to the center wavelengths of the fourth, fifth, and sixth unit filters 821, 822, 823, the effective refractive indices of the third and fourth dielectric layers 881, 882 can be adjusted. The third and fourth dielectric layers 881, 882 may each further include an etching stop layer.

[0122] FIG. 14 is a cross-sectional view schematically showing a spectroscopic filter 1900 according to still another exemplary embodiment.

[0123] Referring to FIG. 14, the first filter array 910 includes at least one unit filter having a center wavelength in the first wavelength region, and the second filter array 920 includes at least one unit filter having a center wavelength in the second wavelength region. FIG. 14 exemplarily shows a case where the first filter array 910 includes first, second, and third unit filters 911, 912, 913, and the second filter array 920 includes fourth, fifth, and sixth unit filters 921, 922, 923.

[0124] The first wavelength region is a wavelength region shorter than the second wavelength region. For example, the first wavelength region can have a range of approximately 250 nm to 600 nm, and the second wavelength region can have a range of approximately 600 nm to 1100 nm. However, this is merely exemplary, and depending on the design conditions, the first and second wavelength regions can be variously deformed. Alternatively, the first wavelength region can also be a wavelength region longer than the second wavelength region.

[0125] Each of the first, second, and third unit filters 911, 912, 913 constituting the first filter array 910 transmits a specific center wavelength within the first wavelength region, and can have a Fabry - Perot structure in which cavities 941, 942, 943 are provided between two metal reflection layers 931, 932 spaced apart from each other.

[0126] When light passes through the metal reflection layers 931, 932 and is incident on the cavities 941, 942, 943, the light will reciprocate inside the cavities 941, 942, 943 between the metal reflection layers 931, 932, and in the process, constructive interference and destructive interference will occur. Then, light having a specific center wavelength that satisfies the constructive interference conditions is emitted outside the unit filters 911, 912, 913. Here, the wavelength band and center wavelength of the light passing through the unit filters 911, 912, 913 are also determined by the reflection bands of the metal reflection layers 931, 932 and the characteristics of the cavities 941, 942, 943.

[0127] The metal reflection layers 931, 932 contain a predetermined metal capable of reflecting light in the first wavelength region. When the first wavelength region is a wavelength region shorter than the second wavelength region, the metal reflection layers 931, 932 contain, for example, Al, Ag, Au, or TiN, etc. On the other hand, when the first wavelength region is a wavelength region longer than the second wavelength region, the metal reflection layers 931, 932 contain, for example, Cu, Ag, Au, or TiN, etc. However, this is merely exemplary. The metal reflection layers 931, 932 are provided with a thickness of about several tens of nm, but are not limited thereto.

[0128] The cavities 941, 942, 943 provided between the metal reflection layers 931, 932 include, for example, but are not limited to, silicon, silicon oxide, silicon nitride, or titanium oxide. The first, second, and third unit filters 911, 912, 913 can have different center wavelengths within the first wavelength region. For this purpose, the first, second, and third unit filters 911, 912, 913 include the first, second, and third cavities 941, 942, 943 with different thicknesses. On the other hand, although not shown, the first, second, and third unit filters 911, 912, 913 can also have different center wavelengths by including cavities with different effective refractive indices.

[0129] Each of the fourth, fifth, and sixth unit filters 921, 922, 923 that make up the second filter array 920 transmits a specific center wavelength within the second wavelength region, and they are It can have a Fabry - Perot structure in which cavities 961, 962, 963 are provided between two Bragg reflection layers 951, 952 that are spaced apart from each other.

[0130] If light passes through the Bragg reflection layers 951, 952 and is incident on the cavities 961, 962, 963, the light will travel back and forth inside the cavities 961, 962, 963 between the Bragg reflection layers 951, 952, and in this process, constructive interference and destructive interference will occur. Then, light having a specific center wavelength that satisfies the constructive interference condition is emitted outside the unit filters 921, 922, 923. Here, the wavelength band and center wavelength of the light passing through the unit filters 911, 912, 913 are also determined by the reflection bands of the Bragg reflection layers 951, 952 and the characteristics of the cavities 961, 962, 963.

[0131] The Bragg reflection layers 951 and 952 can also serve as a distributed Bragg reflector (DBR). The Bragg reflection layers 951 and 952 can have a structure in which at least one layer of a first material layer 951a, 952a having different refractive indices and at least one layer of a second material layer 951b, 952b are alternately laminated. The first material layer 951a, 952a or the second material layer 951b, 952b includes, for example, silicon oxide, titanium oxide, silicon nitride, or silicon, but this is merely exemplary.

[0132] When any one of the first material layers 951a, 952a and the second material layers 951b, 952b constituting the Bragg reflection layers 951 and 952 includes a material (such as silicon) that can absorb light in the first wavelength region (for example, short-wavelength light), it is possible to prevent the light in the first wavelength region from passing through the fourth, fifth, and sixth unit filters 921, 922, and 923.

[0133] The cavities 961, 962, and 963 provided between the Bragg reflection layers 951 and 952 include, for example, silicon, silicon oxide, silicon nitride, hafnium oxide, or titanium oxide, but are not limited thereto.

[0134] The fourth, fifth, and sixth unit filters 921, 922, and 923 can have different center wavelengths within the second wavelength region. For this purpose, the fourth, fifth, and sixth unit filters 921, 922, and 923 include the fourth, fifth, and sixth cavities 961, 962, and 963 having different thicknesses. On the other hand, although not shown, the fourth, fifth, and sixth unit filters 921, 922, and 923 can also have different center wavelengths by including cavities having different effective refractive indices.

[0135] As described above, by arranging on a plane a first filter array 910 in which cavities 941, 942, 943 are provided between metal reflection layers 931, 932 and a second filter array 920 in which cavities 961, 962, 963 are provided between Bragg reflection layers 951, 952, a spectroscopic filter having broadband characteristics including a first wavelength region and a second wavelength region can be realized.

[0136] FIG. 15 is a cross-sectional view schematically showing a spectroscopic filter 2000 according to still another exemplary embodiment. In FIG. 15, for convenience, an example is illustratively shown in which the first filter array 1010 includes one unit filter (first unit filter 1015) and the second filter array 1020 includes one unit filter (second unit filter 1025).

[0137] Referring to FIG. 15, the first unit filter 1015 constituting the first filter array 1010 includes two metal reflection layers 1031, 1032 spaced apart from each other and a first cavity 1045 provided between the metal reflection layers 1031, 1032. The metal reflection layers 1031, 1 032 and the first cavity 1045 are as described above.

[0138] The second unit filter 1025 constituting the second filter array 1020 has a multi-cavity structure. Specifically, the second unit filter 1025 includes three Bragg reflection layers 1051, 1052, 1053 spaced apart from each other and two second cavities 1061, 1062 provided between the Bragg reflection layers 1051, 1052, 1053. The Bragg reflection layers 1051, 1052, 1053 and the second cavities 1061, 1062 are as described above. The number of the first and second material layers constituting each of the Bragg reflection layers 1051, 1052, 1053 can be variously deformed. Although FIG. 15 describes the case where the second unit filter 1025 includes two cavities 1061, 1062, the present invention is not limited thereto, and the second unit filter 1025 can also include three or more cavities.

[0139] FIG. 16 shows the transmission spectrum of the spectroscopic filter 2000 shown in FIG. 15. In FIG. 16, in the spectroscopic filter 2000 shown in FIG. 15, the first filter array 1010 includes four unit filters having different center wavelengths, and the transmission spectrum when the second filter array 1020 includes four unit filters having different center wavelengths is shown.

[0140] In the first filter array 1010, the metal reflection layers 1031 and 1032 are formed of Al, and the cavity 1045 is formed of a multilayer film of TiO2 and SiN. In the second filter array 1020, the Bragg reflection layers 1051, 1052, and 1053 are formed of Si and SiO2, and the cavities 1061 and 1062 are formed of SiO2. In FIG. 16, "S1" indicates the transmission spectrum of the first filter array 1010, and "S2" indicates the transmission spectrum of the second filter array 1020.

[0141] As described above, the case where the first unit filter 1015 has a single cavity structure and the second unit filter 1025 has a multi-cavity structure has been described. However, it is also possible that the first unit filter 1015 has a multi-cavity structure and the second unit filter 1025 has a single cavity structure. Also, both the first and second unit filters 1015 and 1025 can have a multi-cavity structure.

[0142] FIG. 17 is a cross-sectional view schematically showing a spectroscopic filter 2100 according to yet another exemplary embodiment.

[0143] Referring to FIG. 17, the spectroscopic filter 2100 includes first and second filter arrays 1110, 1120, and a microlens array 1150 provided on the first and second filter arrays 1110, 1120. The first filter array 1110 includes first, second, and third unit filters 1111, 1112, 1113 having a center wavelength in a first wavelength region, and the second filter array 1120 includes fourth, fifth, and sixth unit filters 1121, 1122, 1123 having a center wavelength in a second wavelength region.

[0144] The first filter array 1110 is any one of the first filter arrays 110 to 1010 described above, and the second filter array 1120 is any one of the second filter arrays 120 to 1020 described above. Descriptions of the first and second filter arrays 1110, 1120 are omitted.

[0145] On the upper part of the first and second filter arrays 1110, 1120, a microlens array 1150 including a plurality of microlenses 1150a is provided. The microlenses 1150a serve to focus and incident external light onto the corresponding unit filters 1111, 1112, 1113, 1121, 1122, 1123.

[0146] FIG. 17 exemplarily shows a case where the microlenses 1150a are provided in one-to-one correspondence with the unit filters 1111, 1112, 1113, 1121, 1122, 1123. However, this is merely exemplary, and it is also possible to provide at least two unit filters 1111, 1112, 1113, 1121, 1122, 1123 corresponding to one microlens 1150a.

[0147] FIG. 18 is a cross-sectional view schematically showing a spectroscopic filter 2200 according to still another exemplary embodiment.

[0148] Referring to FIG. 18, the spectroscopic filter 2200 includes first and second filter arrays 1210, 1220 and a color filter array 1230. Here, the first and second filter arrays 1210, 1220 and the color filter array 1230 are provided substantially on the same plane.

[0149] The first filter array 1210 includes first, second, and third unit filters 1211, 1212, 1213 having a center wavelength in the first wavelength region, and the second filter array 1220 includes fourth, fifth, and sixth unit filters 1221, 1222, 1223 having a center wavelength in the second wavelength region. The first filter array 1210 becomes any one of the first filter arrays 110 to 1010 described above, and the second filter array 1220 becomes any one of the second filter arrays 120 to 1020 described above. Descriptions of the first and second filter arrays 1210, 1220 are omitted.

[0150] The color filter array 1230 includes, for example, a red color filter 1231, a green color filter 1232, and a blue color filter 1233. Here, the red color filter 1231 can transmit red light having a wavelength band of approximately 600 nm to 700 nm, the green color filter 1232 can transmit green light having a wavelength band of approximately 500 nm to 600 nm, and the blue color filter 1233 can transmit blue light having a wavelength band of approximately 400 nm to 500 nm. As the red, green, and blue color filters 1231, 1232, 1233, for example, color filters commonly applied to color display devices such as liquid crystal display devices or organic light emitting display devices can be used. A microlens array 1250 including a plurality of microlenses 1250a may be further provided above the first and second filter arrays 1210, 1220 and the color filter array 1230.

[0151] According to this embodiment, information about the center wavelengths of the unit filters 1211, 1212, 1213, 1221, 1222, 1223 can be obtained by using the first and second filter arrays 1210, 1220. Moreover, by using the color filter array 1230, information about the wavelengths of red light, green light, and blue light can be further obtained. The color filter array 1230 can have a wavelength band larger than those of the first and second filter arrays 1210, 1220, and can improve the spectral resolution of the image.

[0152] FIG. 19 is a cross-sectional view schematically showing a spectral filter 2300 according to still another exemplary embodiment.

[0153] Referring to FIG. 19, the spectral filter 2300 includes first and second filter arrays 1310, 1320 and an additional filter array 2500 provided on the first and second filter arrays 1310, 1320. The first filter array 1310 includes first, second, and third unit filters 1311, 1312, 1313 having the center wavelength of the first wavelength region. The second filter array 1320 includes fourth, fifth, and sixth unit filters 1321, 1322, 1323 having the center wavelength of the second wavelength region.

[0154] The first filter array 1310 can be any one of the first filter arrays 110 to 1010 described above, and the second filter array 1320 can be any one of the second filter arrays 120 to 1020 described above. Descriptions of the first and second filter arrays 1310, 1320 are omitted.

[0155] The additional filter array 2500 includes a plurality of additional filters 2501, 2502, 2503. FIG. 19 shows a case where the first additional filter 2501 is provided corresponding to the first and second unit filters 1311, 1312, the second additional filter 2502 is provided corresponding to the third and fourth unit filters 1313, 1321, and the third additional filter 2503 is provided corresponding to the fifth and sixth unit filters 1322, 1323. However, this is merely exemplary, and each of the first, second, and third additional filters 2501, 2502, 2503 may be provided corresponding to one unit filter 1311, 1312, 1313, 1321, 1322, 1323, or may be provided corresponding to three or more unit filters 1311, 1312, 1313, 1321, 1322, 1323.

[0156] Each of the first, second, and third additional filters 2501, 2502, 2503 serves to block light in a wavelength band that the corresponding unit filters 1311, 1312, 1313, 1321, 1322, 1323 do not desire. For example, when the first and second unit filters 1311, 1312 have a central wavelength in a wavelength band of approximately 400 nm to 500 nm, the first additional filter 2501 becomes a blue filter that transmits blue light. Also, when the third and fourth unit filters 1313, 1321 have a central wavelength in a wavelength band of approximately 500 nm to 600 nm, the second additional filter 2502 becomes a green filter that transmits green light. And when the fifth and sixth unit filters 1322, 1323 have a central wavelength in a wavelength band of approximately 600 nm to 700 nm, the third additional filter 2503 becomes a red filter that transmits red light.

[0157] The additional filter array 2500 becomes a color filter array. In that case, the first, second, and third additional filters 2501, 2502, 2503 become blue, green, and red color filters, respectively. As the blue, green, and red color filters, for example, color filters commonly applied to color display devices such as liquid crystal display devices or organic light-emitting display devices can be used.

[0158] The additional filter array 2500 may be a broadband filter array. In that case, the first, second, and third additional filters 2501, 2502, 2503 become the first, second, and third broadband filters. Here, each of the broadband filters can have, for example, a multi-cavity structure or a metal mirror structure.

[0159] FIG. 20 shows an example of a broadband filter 2510 that can be used as the additional filters 2501, 2502, 2503 shown in FIG. 19.

[0160] Referring to FIG. 20, the broadband filter 2510 includes a plurality of reflective layers 2513, 2514, 2515 arranged spaced apart from each other, and a plurality of cavities 2511, 2512 provided between the reflective layers 2513, 2514, 2515. In FIG. 20, three layers of reflective layers 2513, 2514, 2515 and two cavities 2511, 2512 are exemplarily shown, but the number of the reflective layers 2513, 2514, 2515 and the cavities 2511, 2512 can be variously deformed.

[0161] Each of the reflective layers 2513, 2514, 2515 also becomes a distributed Bragg reflector (DBR). Each of the reflective layers 2513, 2514, 2515 can have a structure in which a plurality of material layers having different refractive indices are alternately laminated. And each of the cavities 2511, 2512 may contain a material having a predetermined refractive index, or may contain two or more materials having different refractive indices.

[0162] FIG. 21 shows another example of a broadband filter 2520 that can be used as the additional filters 2501, 2502, 2503 shown in FIG. 19.

[0163] Referring to FIG. 21, the broadband filter 2520 includes two metal mirror layers 2522, 2523 arranged spaced apart from each other, and a cavity 2521 provided between the metal mirror layers 2522, 2523.

[0164] FIG. 22 is a cross-sectional view schematically showing a spectral filter 3000 according to yet another exemplary embodiment.

[0165] Referring to FIG. 22, the spectral filter 3000 includes first and second filter arrays 1410, 1420, and a short-wavelength absorption filter 1610 and a long-wavelength cut-off filter 1620 provided on the first and second filter arrays 1410, 1420.

[0166] The first filter array 1410 includes first, second, and third unit filters 1411, 1412, 1413 having a center wavelength in a first wavelength region, and the second filter array 1420 includes fourth, fifth, and sixth unit filters 1421, 1422, 1423 having a center wavelength in a second wavelength region.

[0167] The first filter array 1410 is any one of the first filter arrays 110 to 1010 described above, and the second filter array 1420 is any one of the second filter arrays 120 to 1020 described above. Descriptions of the first and second filter arrays 1410, 1420 are omitted.

[0168] The short-wavelength absorption filter 1610 is provided on some of the unit filters 1411, 1412, 1413, 1421, 1422, 1423, i.e., 1411, 1413, 1422, and the long-wavelength cut-off filter 1620 is provided on other some of the unit filters 1411, 1412, 1413, 1421, 1422, 1423, i.e., 1412, 1421, 1423. FIG. 22 shows a case where each of the short-wavelength absorption filter 1610 and the long-wavelength cut-off filter 1620 is provided corresponding to one unit filter 1411, 1412, 1413, 1421, 1422, 1423, but is not limited thereto, and each of the short-wavelength absorption filter 1610 and the long-wavelength cut-off filter 1620 may be provided corresponding to two or more unit filters 1411, 1412, 1413, 1421, 1422, 1423.

[0169] The short-wavelength absorption filter 1610 serves to block light with a short wavelength, such as visible light. The short-wavelength absorption filter 1610 can be produced, for example, by depositing silicon, which is a substance capable of absorbing visible light, on some of the unit filters 1411, 1412, 1413, 1421, 1422, 1423, namely the unit filters 1411, 1413, 1422. The unit filters 1411, 1413, 1422 provided with the short-wavelength absorption filter 1610 can transmit near-infrared (NIR) light having a wavelength longer than that of visible light.

[0170] The long-wavelength cutoff filter 1620 serves to block light with a long wavelength, such as near-infrared light. The long-wavelength cutoff filter 1620 may include a near-infrared cutoff filter. The unit filters 1412, 1421, 1423 provided with the long-wavelength cutoff filter 1620 can transmit visible light having a wavelength shorter than that of near-infrared light.

[0171] According to the present embodiment, by providing the short-wavelength absorption filter 1610 and the long-wavelength cutoff filter 1620 in the first and second filter arrays 1410, 1420, a spectral filter 3000 having broadband characteristics that can be realized from the visible light band to the near-infrared band can be produced.

[0172] FIG. 23 is an exemplary plan view of a spectral filter 9100 applicable to the image sensor 1000 of FIG. 1.

[0173] Referring to FIG. 23, the spectral filter 9100 includes a plurality of filter groups 9110 arranged two-dimensionally. Here, each filter group 9110 includes 16 unit filters F1 to F16 arranged in a 4×4 array form.

[0174] The first and second unit filters F1 and F2 have center wavelengths UV1 and UV2 in the ultraviolet region, the third to fifth unit filters F3 to F5 have center wavelengths B1 to B3 in the blue light region. The sixth to eleventh unit filters F6 to F11 have center wavelengths G1 to G6 in the green light region, and the twelfth to fourteenth unit filters F12 to F14 have center wavelengths R1 to R3 in the red light region. And the fifteenth and sixteenth unit filters F15 and F16 have center wavelengths NIR1 and NIR2 in the near-infrared region.

[0175] FIG. 24 is another exemplary plan view of the spectroscopic filter 9100 applicable to the image sensor 1000 of FIG. 1. In FIG. 24, for convenience, a plan view of one filter group 9120 is shown.

[0176] Referring to FIG. 24, each filter group 9120 includes nine unit filters F1 to F9 arranged in a 3×3 array form. Here, the first and second unit filters F1 and F2 have center wavelengths UV1 and UV2 in the ultraviolet region, the fourth, fifth and seventh unit filters F4, F5, F7 have center wavelengths B1 to B3 in the blue light region. The third and sixth unit filters F3, F6 have center wavelengths G1, G2 in the green light region, and the eighth and ninth unit filters F8, F9 have center wavelengths R1, R2 in the red light region.

[0177] FIG. 25 is yet another exemplary plan view of the spectroscopic filter 9100 applicable to the image sensor 1000 of FIG. 1. In FIG. 25, for convenience, a plan view of one filter group 9130 is shown.

[0178] Referring to FIG. 25, each filter group 9130 includes 25 unit filters F1 to F25 arranged in a 5×5 array form. Here, the first to third unit filters F1 to F3 have central wavelengths UV1 to UV3 in the ultraviolet region, and the sixth, seventh, eighth, eleventh, and twelfth unit filters F6, F7, F8, F11, F12 have central wavelengths B1 to B5 in the blue light region. The fourth, fifth, and ninth unit filters F4, F5, F9 have central wavelengths G1 to G3 in the green light region, and the tenth, thirteenth, fourteenth, fifteenth, eighteenth, and nineteenth unit filters F10, F13, F14, F15, F18, F19 have central wavelengths R1 to R6 in the red light region. And the twentieth, twenty-third, twenty-fourth, and twenty-fifth unit filters F20, F23, F24, F25 have central wavelengths NIR1 to NIR4 in the near-infrared region.

[0179] The image sensor 1000 including the above-described spectroscopic filter can be adopted in various high-performance optical devices or high-performance electronic devices. Such electronic devices include, for example, smartphones, mobile phones, PDAs (personal digital assistants), laptops, PCs (personal computers), various portable devices, home appliances, security cameras, medical cameras, automobiles, Internet of Things (IoT) devices, and other mobile or non-mobile computing devices, but are not limited thereto. Referring to FIG. 25, each filter group 9130 includes 25 unit filters F1 to F25 arranged in a 5×5 array form. Here, the first to third unit filters F1 to F3 have central wavelengths UV1 to UV3 in the ultraviolet region, and the sixth, seventh, eighth, eleventh, and twelfth unit filters F6, F7, F8, F11, F12 have central wavelengths B1 to B5 in the blue light region. The fourth, fifth, and ninth unit filters F4, F5, F9 have central wavelengths G1 to G3 in the green light region, and the tenth, thirteenth, fourteenth, fifteenth, eighteenth, and nineteenth unit filters F10, F13, F14, F15, F18, F19 have central wavelengths R1 to R6 in the red light region. And the twentieth, twenty-third, twenty-fourth, and twenty-fifth unit filters F20, F23, F24, F25 have central wavelengths NIR1 to NIR4 in the near-infrared region.

[0180] In addition to the image sensor 1000, the electronic device may further include a processor for controlling the image sensor, for example, an application processor (AP), and drive an operation system or an application program via the processor to control a number of hardware or software components and perform various data processing and operations. The processor may further include a GPU (Graphic Processing Unit) and / or an image signal processor. When the processor includes an image signal processor, an image (or video) acquired by the image sensor can be stored and / or output using the processor.

[0181] FIG. 26 is a block diagram showing an example of an electronic device ED01 including an image sensor 1000. Referring to FIG. 26, in a network environment ED00, the electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (such as a short-range wireless communication network) or can further communicate with still another electronic device ED04 and / or a server ED08 via a second network ED99 (such as a long-range wireless communication network). The electronic device ED01 can communicate with the electronic device ED04 via the server ED08. The electronic device ED01 includes a processor ED20, a memory ED30, an input device ED50, an acoustic output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a haptic module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a subscriber identification module ED96, and / or an antenna module ED97. Some of the components of the electronic device ED01 (such as the display device ED60) may be omitted, and other components may be added. Some of the components may be implemented by one integrated circuit. For example, the sensor module ED76 (such as a fingerprint sensor, an iris sensor, an illuminance sensor) can be implemented by being incorporated into the display device ED60 (such as a display). Also, when the image sensor 1000 includes a spectroscopic function, some functions of the sensor module (such as a color sensor, an illuminance sensor) can be implemented by the image sensor 1000 itself, which is not a separate sensor module.

[0182] Processor ED20 can execute software (such as program ED40) and control one or more other components (hardware, software components, etc.) of the electronic device ED01 connected to the processor ED20, and can perform various data processing or operations. As part of the data processing or operation, the processor ED20 can load instructions and / or data received from other components (such as sensor module ED76, communication module ED90) into the volatile memory ED32, process the instructions and / or data stored in the volatile memory ED32, and store the result data in the non-volatile memory ED34. The processor ED20 includes a main processor ED21 (such as a central processing unit, an application processor, etc.) and an auxiliary processor ED23 (such as a graphics processing unit, an image signal processor, a sensor hub processor, a communication processor, etc.) that can operate independently or together with the main processor ED21. Auxiliary processor ED23 uses less power than the main processor ED21 and can perform specialized functions.

[0183] The auxiliary processor ED23 can control the functions and / or states related to some of the components (such as display device ED60, sensor module ED76, communication module ED90, etc.) of the electronic device ED01 instead of the main processor ED21 while the main processor ED21 is in an inactive state (sleep state), or together with the main processor ED21 while the main processor ED21 is in an active state (application execution state). The auxiliary processor ED23 (such as an image signal processor, a communication processor, etc.) can also be embodied as part of other functionally related components (such as camera module ED80, communication module ED90, etc.).

[0184] Memory ED30 can store various data required by components of the electronic device ED01 (such as the processor ED20, the sensor module ED76, etc.). The data includes, for example, software (such as the program ED40), as well as input data and / or output data related to the associated instructions. Memory ED30 includes volatile memory ED32 and / or non-volatile memory ED34. Non-volatile memory ED34 includes built-in memory ED36 fixedly installed within the electronic device ED01 and removable external memory ED38.

[0185] Program ED40 is stored as software in memory ED30 and includes an operating system ED42, middleware ED44, and / or an application ED46.

[0186] Input device ED50 can receive instructions and / or data used by components of the electronic device ED01 (such as the processor ED20, etc.) from outside the electronic device ED01 (such as a user). Input device ED50 includes a microphone, a mouse, a keyboard, and / or a digital pen (such as a stylus pen).

[0187] Acoustic output device ED55 can output an acoustic signal to the outside of the electronic device ED01. Acoustic output device ED55 includes a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia playback or recording playback, and the receiver can be used to receive incoming calls. The receiver may be coupled to a part of the speaker or may be implemented as an independent separate device.

[0188] Display device ED60 can visually provide information to the outside of the electronic device ED01. Display device ED60 includes a display, a hologram device or a projector, and a control circuit for controlling the device. Display device ED60 includes a touch circuit (Touch Circuitry) set to sense touch, and / or a sensor circuit (such as a pressure sensor) set to measure the intensity of the force generated by touch.

[0189] The audio module ED70 can convert sound into an electrical signal or convert an electrical signal into sound. The audio module ED70 can acquire sound through the input device ED50, or output sound through the speakers and / or headphones of the audio output device ED55 and / or another electronic device (such as the electronic device ED02) directly or wirelessly connected to the electronic device ED01.

[0190] The sensor module ED76 can sense the operating state (such as power and temperature) of the electronic device ED01 or the external environmental state (such as the user state), and generate an electrical signal and / or data value corresponding to the sensed state. The sensor module ED76 includes a gesture sensor, a gyro sensor, a barometric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR (Infrared) sensor, a biosensor, a temperature sensor, a humidity sensor, and / or an illuminance sensor.

[0191] The interface ED77 can support one or more specified protocols that can be used for the electronic device ED01 to be directly or wirelessly connected to another electronic device (such as the electronic device ED02). The interface ED77 includes an HDMI (Registered Trademark) (High Definition Multimedia Interface), a USB (Universal Serial Bus) interface, an SD card interface, and / or an audio interface.

[0192] The connection terminal ED78 includes a connector through which the electronic device ED01 can be physically connected to another electronic device (such as the electronic device ED02). The connection terminal ED78 includes an HDMI (Registered Trademark) connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0193] The haptic module ED79 can convert an electrical signal into a mechanical stimulus (such as vibration, movement, etc.) or an electrical stimulus that can be perceived by the user through the sense of touch or kinesthesia. The haptic module ED79 includes a motor, a piezoelectric element, and / or an electrical stimulation device.

[0194] The camera module ED80 can capture still images and moving images. The camera module ED80 includes a lens assembly including one or more lenses, the image sensor 1000 of FIG. 1, an image signal processor, and / or a flash. The lens assembly included in the camera module ED80 can collect light emitted from a subject that is the object of image capture.

[0195] The power management module ED88 can manage the power supplied to the electronic device ED01. The power management module ED88 is also implemented as part of a PMIC (Power Management Integrated Circuit).

[0196] The battery ED89 can supply power to the components of the electronic device ED01. The battery ED89 includes a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0197] The communication module ED90 can assist in establishing a direct (wired) communication channel and / or a wireless communication channel between the electronic device ED01 and other electronic devices (such as the electronic device ED02, the electronic device ED04, the server ED08, etc.), and in performing communication via the established communication channel. The communication module ED90 operates independently of the processor ED20 (such as an application processor) and includes one or more communication processors that support direct communication and / or wireless communication. The communication module ED90 includes a wireless communication module ED92 (such as a cellular communication module, a short-range wireless communication module, a GNSS (Global Navigation Satellite System) communication module, etc.) and / or a wired communication module ED94 (such as a LAN (Local Area Network) communication module, a power line communication module, etc.). The corresponding communication module among them can communicate with other electronic devices via the first network ED98 (a short-range communication network such as Bluetooth (registered trademark), WiFi Direct, or IrDA (Infrared Data Association)), or via the second network ED99 (a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN, etc.)). Such a large number of types of communication modules are more integrated into one component (such as a single chip), or are implemented by a plurality of separate components (multiple chips) from each other. The wireless communication module ED92 can use the subscriber information (such as the International Mobile Subscriber Identifier (IMSI)) stored in the subscriber identification module ED96 to identify and authenticate the electronic device ED01 within a communication network such as the first network ED98 and / or the second network ED99.

[0198] The antenna module ED97 can transmit signals and / or power to the outside (such as other electronic devices) or receive them from the outside. The antenna includes a radiator composed of a conductive pattern formed on a substrate (such as a PCB). The antenna module ED97 includes one or more antennas. When multiple antennas are included, the communication module ED90 selects an antenna suitable for the communication method used in communication networks such as the first network ED98 and / or the second network ED99 from among the multiple antennas. Signals and / or power are transmitted or received between the communication module ED90 and other electronic devices via the selected antenna. In addition to the antenna, other components (such as RFICs (Radio Frequency Integrated Circuits)) may be included as part of the antenna module ED97.

[0199] Some of the components are connected to each other via a communication method between peripheral devices (such as a bus, GPIO (General Purpose Input and Output), SPI (Serial Peripheral Interface), MIPI (Mobile Industry Processor Interface)), and can exchange signals (such as commands and data) with each other.

[0200] Commands or data are transmitted or received between the electronic device ED01 and an external electronic device ED04 via a server ED08 connected to a second network ED99. The other electronic devices ED02, ED04 are also devices of the same or different types as the electronic device ED01. All or part of the operations executed by the electronic device ED01 may be executed by one or more of the other electronic devices ED02, ED04, ED08. For example, when the electronic device ED01 has to perform a certain function or service, instead of having the function or service executed by itself, it can request one or more other electronic devices to perform all or part of the function or service. One or more of the other electronic devices that receive the request can execute additional functions or services related to the request and transmit the result of the execution to the electronic device ED01. For this purpose, cloud computing technology, distributed computing technology and / or client-server computing technology are utilized.

[0201] FIG. 27 is a block diagram illustrating the camera module ED80 of FIG. 26. Referring to FIG. 27, the camera module ED80 includes a lens assembly CM10, a flash CM20, an image sensor 1000 (e.g., illustrated in FIG. 1), an image stabilizer CM40, a memory CM50 (such as a buffer memory) and / or an image signal processor CM60. The lens assembly CM10 can collect light emitted from a subject that is the object of image capture. The camera module ED80 includes a plurality of lens assemblies CM10, in which case the camera module ED80 becomes a dual camera, a 360° camera or a spherical camera. Some of the plurality of lens assemblies CM10 can have the same lens attributes (such as angle of view, focal length, autofocus, F-number, optical zoom, etc.) or different lens attributes. The lens assembly CM10 includes a wide-angle lens or a telephoto lens.

[0202] The Flash CM20 can emit light that is used to enhance the light emitted or reflected from a subject. The Flash CM20 includes one or more light-emitting diodes (such as RGB (Red-Green-Blue) LEDs, White LEDs, Infrared LEDs, Ultraviolet LEDs, etc.) and / or a xenon lamp. The image sensor 1000 is also the image sensor described in FIG. 1, and can acquire an image corresponding to the subject by converting the light emitted or reflected from the subject and transmitted through the lens assembly CM10 into an electrical signal. The image sensor 1000 includes one or more sensors selected from image sensors with different attributes, such as an RGB sensor, a BW (Black and White) sensor, an IR sensor, or a UV sensor. Each sensor included in the image sensor 1000 is also implemented by a CCD sensor and / or a CMOS sensor.

[0203] The image stabilizer CM40 responds to the movement of the camera module ED80 or the electronic device ED01 including the same, and moves one or more lenses included in the lens assembly CM10 or the image sensor 1000 in a specific direction, or controls the operating characteristics of the image sensor 1000 (such as adjusting the read-out timing) so that the negative impact caused by the movement is compensated. The image stabilizer CM40 can sense the movement of the camera module ED80 or the electronic device ED01 by using a gyro sensor (not shown) or an acceleration sensor (not shown) disposed inside or outside the camera module ED80. The image stabilizer CM40 is also implemented optically.

[0204] Memory CM50 can store data of part or all of the image acquired via image sensor 1000 for the next image processing operation. For example, when multiple images are acquired at high speed, the acquired original data (such as Bayer-Patterned data, high-resolution data, etc.) is stored in memory CM50, and only the low-resolution images are displayed, and then the original data of the selected (such as user selection) image can be used to be transmitted to image signal processor CM60. Memory CM50 is integrated into the memory ED30 of electronic device ED01 or is composed of a separate memory that operates independently.

[0205] Image signal processor CM60 can perform image processing on the image acquired via image sensor 1000 or the image data stored in memory CM50. The image processing includes depth map generation, three-dimensional modeling, panorama generation, feature point extraction, image synthesis and / or image compensation (such as noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). Image signal processor CM60 can control the components (such as image sensor 1000) included in camera module ED80 (such as exposure time control or readout timing control). The image processed by image signal processor CM60 is either stored again in memory CM50 for additional processing or provided to external components of camera module ED80 (such as memory ED30, display device ED60, electronic device ED02, electronic device ED04, server ED08, etc.). Image signal processor CM60 is integrated into processor ED20 or is composed of a separate processor that operates independently of processor ED20. When image signal processor CM60 is composed of a separate processor from processor ED20, the image processed by image signal processor CM60 can be displayed via display device ED60 after undergoing additional image processing by processor ED20.

[0206] The electronic device ED01 includes a plurality of camera modules ED80 each having a different attribute or function. In that case, one of the plurality of camera modules ED80 is a wide-angle camera, and another one is a telephoto camera. Similarly, one of the plurality of camera modules ED80 is a front camera, and another one is a rear camera.

[0207] The image sensor 1000 according to one embodiment is applicable to a mobile phone or smartphone 5100m shown in FIG. 28, a tablet or smart tablet 5200 shown in FIG. 29, a digital camera or camcorder 5300 shown in FIG. 30, a notebook computer 5400 shown in FIG. 31, or a TV or smart TV 5500 shown in FIG. 32, etc. For example, the smartphone 5100m or the smart tablet 5200 includes a plurality of high-resolution cameras each equipped with a high-resolution image sensor. Using the high-resolution cameras, it is possible to extract the depth information of a subject in the video, adjust the out-of-focusing of the video, or automatically identify the subject in the video.

[0208] In addition, the image sensor 1000 is applicable to a smart refrigerator 5600 shown in FIG. 33, a security camera 5700 shown in FIG. 34, a robot 5800 shown in FIG. 35, a medical camera 5900 shown in FIG. 36, etc. For example, the smart refrigerator 5600 can use the image sensor to automatically recognize the food in the refrigerator and notify the user via a smartphone about whether a specific food exists, the type of food that has been stocked or taken out, etc. The security camera 5700 can provide an ultra-high-resolution video and utilize high sensitivity to enable the recognition of things or people in the video even in a dark environment. The robot 5800 is deployed in a disaster or industrial site where humans cannot directly approach and can provide a high-resolution video. The medical camera 5900 can provide a high-resolution video for diagnosis or surgery and can dynamically adjust the field of view.

[0209] Also, as shown in FIG. 37, the image sensor 1000 is applicable to the vehicle 6000. The vehicle 6000 includes a plurality of vehicle cameras 6010, 6020, 6030, 6040 arranged at various positions, and each vehicle camera 6010, 6020, 6030, 6040 includes an image sensor according to an embodiment. The vehicle 6000 can use the plurality of vehicle cameras 6010, 6020, 6030, 6040 to provide the driver with various information about the inside or the periphery of the vehicle 6000, automatically recognize things or people in the video, and provide the information necessary for autonomous driving.

[0210] The image sensor including the above-described spectroscopic filter and the electronic device including the same have been described with reference to the embodiments shown in the drawings, but they are merely exemplary, and those having ordinary knowledge in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the disclosed embodiments should be considered from an illustrative rather than a limiting perspective. The scope of rights is represented not by the foregoing description but by the claims, and all differences within the equivalent scope thereof should be construed as being included in the scope of rights.

Industrial Applicability

[0211] The present invention is applicable to, for example, the technical field related to optical devices.

Explanation of Signs

[0212] 110 First filter array 111 First unit filter 112 Second unit filter 113 Third unit filter 120 Second filter array 121 Fourth unit filter 122 Fifth unit filter 123 Sixth unit filter 131, 132 First metal reflection layer 141, 142, 143, 161, 162, 163 cavities 151, 152 Second metal reflection layer 1000 Image sensor 1100 Spectral filter 4010 Timing controller 4020 Row decoder 4030 Output circuit 4100 Pixel array

Claims

1. At least one first unit filter having a center wavelength in a first wavelength region, At least one second unit filter having a center wavelength in a second wavelength region, and includes, The first unit filter, A plurality of first metal reflection layers that are provided apart from each other and are made of the same first metal, At least one first cavity provided between the plurality of first metal reflection layers, and includes, The second unit filter, A plurality of second metal reflection layers that are provided apart from each other and are made of the same second metal, At least one second cavity provided between the plurality of second metal reflection layers, and includes, The first metal is different from the second metal, A spectroscopic filter characterized by this.

2. The spectroscopic filter according to claim 1, wherein the at least one first unit filter and the at least one second unit filter are arranged in a one-dimensional or two-dimensional manner on a plane.

3. The spectroscopic filter according to claim 1, wherein the center wavelength of the first wavelength region is shorter than the center wavelength of the second wavelength region.

4. The first metal constituting the first metal reflection layer includes Al, Ag, Au, or TiN as a first type of metal, and the second metal constituting the second metal reflection layer includes Cu, Ag, Au, or TiN different from the first type of metal as a second type of metal. The spectroscopic filter according to claim 3, characterized by this.

5. The spectroscopic filter according to claim 1, wherein the at least one first unit filter constitutes a first filter array including a plurality of first unit filters having different center wavelengths, and the at least one second unit filter constitutes a second filter array including a plurality of second unit filters having different center wavelengths.

6. The spectroscopic filter according to claim 1, wherein the center wavelength of the first unit filter is adjusted by changing the thickness or effective refractive index of the first cavity, and the center wavelength of the second unit filter is adjusted by changing the thickness or effective refractive index of the second cavity.

7. The first unit filter further includes first and second dielectric layers provided at the lower and upper portions of the first cavity, and the second unit filter further includes third and fourth dielectric layers provided at the lower and upper portions of the second cavity. The spectral filter according to claim 1, characterized in that.

8. The spectral filter according to claim 7, characterized in that each of the first, second, third, and fourth dielectric layers has a single-layer or multi-layer structure.

9. The spectral filter according to claim 7, characterized in that each of the first, second, third, and fourth dielectric layers has a thickness of 10 nm to 20000 nm.

10. The thickness or effective refractive index of each of the first and second dielectric layers is adjusted by the central wavelength of the first unit filter, and the thickness or effective refractive index of each of the third and fourth dielectric layers is adjusted by the central wavelength of the second unit filter. The spectral filter according to claim 7, characterized in that.

11. The spectral filter according to claim 1, further comprising a plurality of microlenses provided on at least one of the first and second unit filters.

12. The spectral filter according to claim 1, further comprising a color filter disposed on the same plane as at least one of the first and second unit filters.

13. The spectral filter according to claim 1, further comprising an additional filter provided on at least one of the first and second unit filters and transmitting only a specific wavelength band.

14. The spectral filter according to claim 13, characterized in that the additional filter includes a color filter or a broadband filter.

15. The spectral filter according to claim 1, characterized in that a short-wavelength absorption filter is provided on a part of at least one of the first and second unit filters, and a long-wavelength blocking filter is provided on another part.

16. At least one first unit filter having a central wavelength in a first wavelength region, At least one second unit filter having a central wavelength in a second wavelength region, and The first unit filter, A plurality of metal reflection layers provided spaced apart from each other, At least one first cavity provided between the plurality of metal reflection layers, and The second unit filter, A plurality of Bragg reflection layers provided separately from each other, and at least one second cavity provided between the plurality of Bragg reflection layers, wherein the spectroscopic filter is characterized by including the above.

17. The spectroscopic filter according to claim 16, wherein the at least one first unit filter and the at least one second unit filter are arranged one-dimensionally or two-dimensionally on a plane.

18. The spectroscopic filter according to claim 16, wherein the central wavelength of the first unit filter is adjusted by changing the thickness or effective refractive index of the first cavity, and the central wavelength of the second unit filter is adjusted by changing the thickness or effective refractive index of the second cavity.

19. The spectroscopic filter according to claim 16, further including a plurality of microlenses provided on the at least one first and second unit filters.

20. The spectroscopic filter according to claim 16, further including a color filter arranged on the same plane as the at least one first and second unit filters.

21. The spectroscopic filter according to claim 16, further including an additional filter provided on the at least one first and second unit filters and transmitting only a specific wavelength band.

22. A spectroscopic filter according to any one of claims 1 to 15, and a pixel array that receives light transmitted through the spectroscopic filter, wherein the image sensor is characterized by including the above.

23. A spectroscopic filter according to any one of claims 16 to 21, and a pixel array that receives light transmitted through the spectroscopic filter, wherein the image sensor is characterized by including the above.

24. The image sensor according to claim 22 or 23, wherein the image sensor further includes a timing controller, a row decoder, and an output circuit.

25. An electronic device, characterized by including the image sensor according to any one of claims 22 to 24.

26. The electronic device according to claim 25, wherein the electronic device includes a mobile phone, a smartphone, a tablet, a smart tablet, a digital camera, a camcorder, a notebook computer, a TV, a smart TV, a smart refrigerator, a security camera, a robot, or a medical camera.

27. A first unit filter having a first center wavelength within a first wavelength region, A second unit filter having a second center wavelength within a second wavelength region and provided horizontally adjacent to the first unit filter, The first unit filter includes: Two layers of first metal reflection layers that are vertically spaced apart from each other and made of the same first metal, A first cavity provided between the two layers of first metal reflection layers, The second unit filter includes: Two layers of second metal reflection layers that are vertically spaced apart from each other and made of the same second metal, A second cavity provided between the two layers of second metal reflection layers, The first metal is different from the second metal, A spectroscopic filter characterized by the above.

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