SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To improve the throughput of a process for drying a substrate film.SOLUTION: A substrate processing device includes a chamber, a depressurizing mechanism for depressurizing the interior space of the chamber, a substrate holding unit for holding a substrate having a film in the interior space, a baffle cover covering the substrate held by the substrate holding unit in the interior space, a gas analyzer for detecting specific gases in a substrate housing space surrounded by the substrate holding unit and the baffle cover, and a controller for determining a completion of drying of the film on the basis of an output of the gas analyzer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 describes a substrate processing apparatus that places a substrate containing a sublimable substance on a substrate holding part in a processing chamber and heats it in the processing chamber to evaporate the sublimable substance, thereby removing the sublimable substance from the substrate. A vacuum pump is connected to the processing chamber via a connecting part, and a detector is provided between the vacuum pump and the processing chamber. The detector detects the vaporized gas generated by the sublimation of the sublimable substance. If the concentration of the vaporized gas detected by the detector is equal to or higher than a predetermined value, it can be determined that the sublimable substance is in the process of sublimating. On the other hand, if the concentration of the vaporized gas detected by the detector becomes less than the predetermined value, it can be determined that the sublimation of the sublimable substance has ended.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In an apparatus for performing a process of drying a film on a substrate, the timing of the end of the process can be determined so that it is ensured that the film is sufficiently dried. However, if the detection of the fact that the film is sufficiently dried is delayed, it is difficult to improve the throughput.

[0005] An object of the present invention is to provide an advantageous technique for improving the throughput of a process of drying a film on a substrate.

Means for Solving the Problems

[0006] One aspect of the present invention relates to a substrate processing apparatus, the substrate processing apparatus including a chamber, a decompression mechanism for decompressing an internal space of the chamber, a substrate holding part for holding a substrate having a film in the internal space, a cover having a plurality of openings and covering the substrate held by the substrate holding part in the internal space, and a substrate accommodating space surrounded by the substrate holding part and the cover. containing the solvent generated from the membrane a gas analyzer for detecting a gas; but output Information about the concentration of said solvent and a controller for controlling the drying process of the film based on the [Effects of the Invention]

[0007] According to the present invention, an advantageous technique is provided for improving the throughput of a process for drying a film on a substrate. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view showing a configuration of a substrate processing apparatus according to an embodiment; [Figure 2] FIG. 2 is a plan view looking downward from the AA plane in FIG. [Figure 3] FIG. 2 is an enlarged cross-sectional view of a portion of the substrate processing apparatus of FIG. [Figure 4] 5A to 5C are diagrams for explaining advantages of the substrate processing apparatus according to the embodiment; [Figure 5] 10A and 10B are diagrams illustrating an example of pressure control in the internal space during a drying process. [Figure 6] FIG. 2 is a diagram showing a schematic view of substrate transportation (loading and unloading). [Figure 7] 1A to 1C are diagrams illustrating a substrate processing method as a method of using the substrate processing apparatus according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe multiple features, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate identical or similar components, and redundant explanations will be omitted. In the embodiments and drawings described below, directions are indicated by an XYZ coordinate system. In the XYZ coordinate system, the XY plane is the horizontal direction, and the negative direction of the Z axis can be the vertical direction.

[0010] Fig. 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus SPA according to an embodiment. Fig. 2 is a plan view looking downward from the AA plane in Fig. 1. Fig. 3 is an enlarged view of a portion of Fig. 1. The substrate processing apparatus SPA can be configured to process a substrate S having a film F. More specifically, the substrate processing apparatus SPA can be configured to perform a drying process for drying the film F on the substrate S.

[0011] The film F may be, for example, a film composed of a solution containing a solute and a solvent for forming an organic film (hereinafter referred to as a solution film). The solvent may have a property that evaporation is promoted in a reduced pressure environment lower than atmospheric pressure. Evaporation of the solvent may be promoted, for example, at a temperature higher than room temperature (25°C). The organic film may be, for example, any of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer of an organic light-emitting diode (OLED) device. The production of an organic EL device may include a process of forming each organic film, such as the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer, on a substrate. The process of forming each organic film on a substrate may include a coating process of disposing or coating a solution film on the substrate by a printing method or the like, a drying process of drying the solution film to form a dry film, and a baking process of baking the dry film.

[0012] The substrate processing apparatus SPA may include a chamber 10. The chamber 10 is a member that defines an internal space SP1 separated from the external space. The chamber 10 may be understood as a member that encloses the internal space SP1. Hereinafter, the internal space SP1 defined by the outer edge of the chamber 10 is also referred to as the internal space SP1 of the chamber 10. The chamber 10 may include at least one gate valve 12. The substrate S to be subjected to the drying process can be transported from the external space of the chamber 10 to the internal space SP1 through the gate valve 12. Also, the substrate S that has undergone the drying process can be transported from the internal space SP1 to the external space.

[0013] The substrate processing apparatus SPA may further include a pressure reducing mechanism 30 that reduces the pressure in the internal space SP1 of the chamber 10. The pressure reducing mechanism 30 can include, for example, a plurality of pumps, and the plurality of pumps can include at least one of, for example, a dry pump and a diaphragm vacuum pump. The plurality of pumps can further include at least one of, for example, a turbo molecular pump, a cryopump, a soap solution pump, an oil diffusion pump, a mechanical booster pump, an ejector pump, and an oil rotary vacuum pump.

[0014] The substrate processing apparatus SPA may further include a substrate holding unit 20 that holds the substrate S having the film F. The substrate holding unit 20 is disposed in the internal space SP1. The substrate processing apparatus SPA may further include a temperature control unit 70 that controls the temperature of the substrate holding unit 20. The temperature control unit 70 typically may include a heater that heats the substrate holding unit 20, but may also include a cooler that cools the substrate holding unit 20. The temperature control unit 70 may be understood as a component that controls the temperature of the substrate S or the film F of the substrate S.

[0015] The substrate processing apparatus SPA may further include a baffle cover 40 that covers the substrate S held by the substrate holding part 20 in the internal space SP1. The baffle cover 40 may have a plurality of openings 42, as illustrated in FIGS. 1 and 2. The arrangement and dimensions of the plurality of openings 42 may be determined so that the film F on the substrate S is dried uniformly. The substrate holding part 20 and the baffle cover 40 may define a substrate accommodating space SP2 surrounded by the substrate holding part 20 and the baffle cover 40 when the baffle cover 40 covers the substrate S. The baffle cover 40 need not necessarily have any openings, as long as it has a configuration that allows the substrate accommodating space SP2 to communicate with the internal space SP1 when the baffle cover 40 covers the substrate S.

[0016] The substrate processing apparatus SPA may include a gas analyzer 60 that detects a specific gas in the substrate accommodation space SP2 surrounded by the substrate holder 20 and the baffle cover 40. The gas analyzer 60 may be a residual gas analyzer (RGA) such as a mass spectrometer. The specific gas detected by the gas analyzer 60 is a gas evaporated from the film F on the substrate S, i.e., the gas to be detected. More specifically, the specific gas may be a solvent (gas). FIG. 3 schematically shows how the solvent (specific gas) released by evaporation from the film F on the substrate S is discharged from the internal space SP1 by the decompression mechanism 30.

[0017] The substrate processing apparatus SPA may further include a connection portion 62 connecting a gas inlet of the gas analyzer 60 to the substrate accommodating space SP2. The gas inlet is an opening through which the gas analyzer 60 takes in gas. The connection portion 62 may be a flexible tube, such as a glass fiber tube. Alternatively, the connection portion 62 may be a bellows. The connection portion 62 has a first end E1 and a second end E2. The first end E1 is connected to the gas inlet of the gas analyzer 60, and the second end E2 may be positioned to protrude from the inner surface of the baffle cover 40 into the substrate accommodating space SP2. The second end E2 may be positioned to protrude from the inner surface of the sidewall of the baffle cover 40 into the substrate accommodating space SP2, for example.

[0018] The substrate processing apparatus SPA may include a controller 90. The controller 90 may be configured to control a drying process for drying the film F on the substrate S. The controller 90 may be configured to determine the end of drying of the film F on the substrate S based on the output of the gas analyzer 60. For example, the controller 90 may be configured to determine that the drying of the film F on the substrate S (the drying process for drying the film F) has ended in response to the output of the gas analyzer 60 indicating that the amount of a specific gas is a preset amount. The controller 90 may be configured by, for example, a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), or an ASIC (abbreviation for Application Specific Integrated Circuit), or a general-purpose or dedicated computer into which a program is incorporated, or a combination of all or part of these.

[0019] Here, the advantages of the configuration for detecting a specific gas in the substrate accommodation space SP2 surrounded by the substrate holding unit 20 and the baffle cover 40 by the gas analyzer 60 will be described with reference to FIG. 4. In FIG. 4, the dotted curve illustrates the concentration of the specific gas (the solvent evaporated from the film F of the substrate S) in the internal space SP1. In FIG. 4, the solid curve illustrates the concentration of the specific gas (the solvent evaporated from the film F of the substrate S) in the substrate accommodation space SP2. By heating the substrate S, the evaporation of the film F is promoted, whereby the solvent concentration in the substrate accommodation space SP2 decreases faster than in the internal space SP1. The solvent released by evaporation from the film F of the substrate S disposed in the substrate accommodation space SP2 may move into the internal space SP1 through the plurality of openings 42 of the baffle cover 40 and condense on the inner surface of the chamber 10 and adhere to the inner surface. While a large amount of solvent adheres to the inner surface of the chamber 10, the pressure in the internal space SP1 can be maintained at a pressure close to the vapor pressure of the solvent. Then, when the solvent is substantially removed from the inner surface of the chamber 10, the pressure in the internal space SP1 may start to drop from a pressure close to the vapor pressure of the solvent to a lower pressure. Therefore, even when the concentration of the solvent in the substrate accommodation space SP2 has sufficiently decreased, the concentration of the solvent in the internal space SP1 between the baffle cover 40 and the chamber 10 does not easily decrease and can continue to maintain a value much larger than the concentration of the solvent in the substrate accommodation space SP2. Therefore, the configuration for detecting a specific gas in the substrate accommodation space SP2 surrounded by the substrate holding unit 20 and the baffle cover 40 by the gas analyzer 60 is advantageous for quickly detecting the end of the drying process of the film F of the substrate S. This is effective for quickly ending the drying process of the film F of the substrate S and improving the throughput.

[0020] FIG. 5 illustrates the control of the pressure in the internal space SP1 in a drying process that can be controlled by the controller 90. This pressure control may include the control of the decompression mechanism 30. The drying process includes, for example, a plurality of drying steps, and the controller 90 can control the decompression mechanism 30 so that the plurality of drying steps are executed. In the example of FIG. 5, the drying process includes a first drying step D1, a second drying step D2, a third drying step D3, and a fourth drying step D4, but the number of the plurality of drying steps included in the drying process is not limited to a specific number.

[0021] In the first step D1, for example, while lowering the pressure in the internal space SP1 from the atmospheric pressure to a first pressure higher than the vapor pressure of the solvent in the film F of the substrate S, the film F of the substrate S is dried. In the second step D2, for example, with the pressure in the internal space SP1 maintained at the first pressure, the film F of the substrate S is dried. In the third step D3, for example, while lowering the pressure in the internal space SP1 to a second pressure lower than the first pressure and lower than the pressure of the solvent, the film F of the substrate S is dried. In the fourth step D4, for example, with the pressure in the internal space SP1 maintained at the second pressure, the film F of the substrate S is dried.

[0022] In one example, the controller 90 can be configured to determine the end of the last drying step D4 among the plurality of drying steps D1 to D4 based on the output of the gas analyzer 60. As illustrated in FIG. 5, in the plurality of drying steps included in the drying process, the pressures in the internal space SP1 can be different from each other. However, among the plurality of drying steps included in the drying process, there may be included two or more drying steps in which the pressures in the internal space SP1 are the same as each other.

[0023] The substrate processing apparatus SPA may further include a gas introduction unit 50 that introduces an inert gas into the internal space SP1 of the chamber 10. In one example, the controller 90 can control the gas introduction unit 50 so that an inert gas is introduced into the internal space SP1 in at least the last drying step (drying step D4 in the example of FIG. 5) among the plurality of drying steps included in the drying process. The gas introduction unit 50 may include an introduction tube 52 that extends from the chamber 10 (inner surface) to the substrate accommodation space SP2. In this case, the gas introduction unit 50 introduces an inert gas into the substrate accommodation space SP2 disposed in the internal space SP1. The introduction tube 52 may be arranged so that an inert gas is supplied to the substrate accommodation space SP2 through a through hole provided in the side wall of the baffle cover 40. The tip of the introduction tube 52 may protrude from the inner surface of the baffle cover 40 toward the substrate accommodation space SP. The introduction tube 52 may be a flexible tube. The gas introduction unit 50 may have a gas inlet arranged to face the connection portion 62 (second end E2) in the substrate accommodation space SP2.

[0024] The supply of the inert gas to the substrate accommodation space SP2 is advantageous for guiding the solvent evaporated from the film F of the substrate S to the second end E2 of the connection portion 62. The supply of the inert gas to the substrate accommodation space SP is also advantageous for functioning a noise filter included in a certain type of gas analyzer 60. Such a noise filter may require that the space to be detected has a pressure equal to or higher than a predetermined pressure. Specifically, a certain type of gas analyzer 60 may include a noise filter disposed between an ion source, a quadrupole mass filter, and a detector, in addition to the ion source, the quadrupole mass filter, and the detector. The noise filter is configured to allow stable elements ionized by the ion source to pass through the noise filter and reach the quadrupole mass filter, but block metastable molecules (noise sources). However, when the space to be detected has a pressure lower than the predetermined pressure, the free path of the element becomes longer and the speed also becomes faster, so that the ionized stable molecules can no longer pass through the noise filter. When the space to be detected has a pressure lower than the predetermined pressure, the detection accuracy may decrease.

[0025] The substrate processing apparatus SPA may further include a lifting mechanism 80 that lifts and lowers the baffle cover 40. The lifting mechanism 80 may be used when transporting the substrate S to and from the substrate holding unit 20. The substrate S may be transported by a transport mechanism RB, as illustrated in FIG. 6 . When transporting (loading) the substrate to and from the substrate holding unit 20, the lifting mechanism 80 may position the baffle cover 40 at a first height in response to, for example, a command from the controller 90. Here, the first height is a height above the substrate holding unit 20 at which the substrate transport mechanism RB can transport the substrate S. When drying the film F on the substrate S, the lifting mechanism 80 may position the baffle cover 40 at a second height, which is lower than the first height, in response to, for example, a command from the controller 90. Here, the second height is a height for performing a drying process to dry the film F on the substrate S, as illustrated in FIG. 1 .

[0026] To uniformly dry the film F on the substrate S over the entire substrate S, it is advantageous to ensure a suitable distance between the upper surface of the baffle cover 40 and the ceiling of the chamber 10. However, this requires an increase in the height of the substrate processing apparatus SPA. The substrate holder 20 may be lowered when transferring the substrate S to and from the substrate holder 20, but this may further increase the height of the substrate processing apparatus SPA. On the other hand, the configuration in which the lifting mechanism 80 lifts and lowers the baffle cover 40 as described above is advantageous because it utilizes the space between the upper surface of the baffle cover 40 and the ceiling of the chamber 10 to uniformly dry the film on the substrate S. In other words, the configuration in which the lifting mechanism 80 lifts and lowers the baffle cover 40 is advantageous for preventing a further increase in the height of the substrate processing apparatus SPA.

[0027] FIG. 7 illustrates a substrate processing method as a method of using a substrate processing apparatus SPA. The substrate processing method shown in FIG. 7 can be controlled by a controller 90. In step S1, a substrate S having a film F is conveyed (loaded) to a substrate holding unit 20 disposed in an internal space SP1 of a chamber 10 and can be placed on the substrate holding unit 20. In step S2, the substrate S placed on the substrate holding unit 20 can be covered with a baffle cover 40. In step S3, a drying process is started in which the internal space SP1 of the chamber 10 is depressurized to dry the film F of the substrate S. In step S4, a specific gas (solvent) in a substrate accommodation space SP2 surrounded by the substrate holding unit 20 and the baffle cover 40 is detected by a gas analyzer 60. In step S5, based on the output of the gas analyzer 60, it is determined whether to end the drying process for drying the film of the substrate S. Here, when the drying process includes a plurality of drying steps, step S5 may be performed after the start of the last drying step among the plurality of drying steps. In step S5, if it is determined to end the drying process, step S6 is executed; otherwise, step S4 is executed again. In step S6, the substrate S held by the substrate holding unit 20 is conveyed (unloaded) to an external space of the chamber 10.

[0028] The substrate S conveyed to the external space of the chamber 10 is then further processed, whereby an article as a target object is obtained from the processed substrate S. Such processing may include a firing step of the dried film, further film formation (arrangement (coating), drying, firing), electrode formation, formation of a sealing film, and the like.

[0029] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the claims are appended to disclose the scope of the invention.

Explanation of Reference Numerals

[0030] 10: Chamber, SP1: Internal Space, 20: Substrate Holding Unit, 30: Depressurization Mechanism, 40: Baffle Cover, SP2: Substrate Accommodation Space, 60: Gas Analyzer, SPA: Substrate Processing Apparatus

Claims

1. A chamber, a decompression mechanism for decompressing the internal space of the chamber, a substrate holding unit for holding a substrate having a film in the internal space, a cover provided with a plurality of openings and covering the substrate held by the substrate holding unit in the internal space, a gas analyzer for detecting a gas containing a solvent generated from the film in a substrate accommodation space surrounded by the substrate holding unit and the cover, a controller for controlling the drying process of the film based on information regarding the concentration of the solvent output by the gas analyzer, A substrate processing apparatus, characterized by comprising the above components.

2. The substrate processing apparatus according to claim 1, further comprising a connection part connecting a gas introduction port of the gas analyzer and the substrate accommodation space.

3. The connection part has a first end and a second end. The first end is connected to the gas introduction port of the gas analyzer, and the second end is arranged to protrude into the substrate accommodation space from the inner surface of the cover. The substrate processing apparatus according to claim 2, characterized by the above structure.

4. The second end is arranged to protrude into the substrate accommodation space from the inner surface of the side wall of the cover. The substrate processing apparatus according to claim 3, characterized by the above structure.

5. The controller makes an end determination of the drying process of the film based on information regarding the concentration of the solvent output by the gas analyzer. The substrate processing apparatus according to any one of claims 1 to 4, characterized by the above structure.

6. The controller controls the decompression mechanism so that a plurality of drying steps are executed, and determines the end of the last drying step among the plurality of drying steps based on information regarding the concentration of the solvent output by the gas analyzer. The substrate processing apparatus according to claim 5, characterized by the above structure.

7. In the plurality of drying steps, the pressures of the internal space are different from each other. The substrate processing apparatus according to claim 6, characterized by the above structure.

8. The substrate processing apparatus further comprises a gas introduction part for introducing an inert gas into the internal space, and the controller controls the gas introduction part so that the inert gas is introduced into the internal space at least in the last drying step. The substrate processing apparatus according to claim 6 or 7, characterized by the above structure.

9. The gas introduction part includes an introduction tube extending from the chamber to the substrate accommodation space. The substrate processing apparatus according to claim 8, characterized by the above structure.

10. The introduction tube is arranged such that the inert gas is supplied to the substrate accommodation space through a through hole provided in the side wall of the cover. The substrate processing apparatus according to claim 9, characterized in that.

11. The substrate processing apparatus further includes a gas introduction unit for introducing an inert gas into the internal space. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that.

12. The gas introduction unit includes an introduction tube extending from the chamber to the substrate accommodation space. The substrate processing apparatus according to claim 11, characterized in that.

13. The introduction tube is arranged such that the inert gas is supplied to the substrate accommodation space through a through hole provided in the side wall of the cover. The substrate processing apparatus according to claim 12, characterized in that.

14. The substrate processing apparatus further includes a gas introduction unit for introducing an inert gas into the substrate accommodation space, The gas introduction unit has a gas inlet arranged to face the connection part in the substrate accommodation space. The substrate processing apparatus according to any one of claims 2 to 4, characterized in that.

15. The substrate processing apparatus further includes a temperature control unit for controlling the temperature of the substrate holding unit. The substrate processing apparatus according to any one of claims 1 to 14, characterized in that.

16. The substrate processing apparatus further includes a lifting mechanism for lifting and lowering the cover. The substrate processing apparatus according to any one of claims 1 to 15, characterized in that.

17. The lifting mechanism arranges the cover at a first height during the transfer of the substrate to the substrate holding unit and the transfer of the substrate from the substrate holding unit, and arranges the cover at a second height lower than the first height when drying the film of the substrate. The substrate processing apparatus according to claim 16, characterized in that. ​ ​ ​ ​ ​ ​ ​ A step of controlling the drying process of the film based on information regarding the concentration of the solvent output by a gas analyzer that detects a gas containing the solvent generated from the film in a substrate accommodation space surrounded by the substrate holding portion and the cover; A substrate processing method, characterized by including this.

20. A step of processing a substrate by the substrate processing method according to claim 19; A step of transporting the substrate held by the substrate holding portion to an external space of the chamber; A step of processing the substrate transported to the external space to obtain an article; An article manufacturing method, characterized by including this.

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