Epoxy resin composition for semiconductor element encapsulation and semiconductor element encapsulated with the same

Abstract

To provide an epoxy resin composition for encapsulation of semiconductor devices that has high thermal conductivity, significantly improved heat-radiation effect, and improved flowability.SOLUTION: The present invention discloses an epoxy resin composition for encapsulation of semiconductor devices and a semiconductor device encapsulated using the epoxy resin composition, the epoxy resin composition including an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst, the epoxy resin including an epoxy resin represented by Formula 1.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to an epoxy resin composition for encapsulating semiconductor elements and a semiconductor element encapsulated with the same. More specifically, the present invention relates to an epoxy resin composition for encapsulating semiconductor elements that has high thermal conductivity, excellent heat dissipation effect for semiconductors, and excellent flowability, and a semiconductor element encapsulated with the same. [Background technology]

[0002] In recent years, the integration density of semiconductor elements has been increasing. In semiconductor devices in which stacked and highly dense semiconductor elements are sealed in small, thin packages, the heat generated during semiconductor operation can lead to a very high frequency of package malfunctions and failures such as package cracks.

[0003] One solution to heat dissipation is to use a heat sink, such as a metal material, when molding the epoxy resin encapsulation. However, heat sinks can only be used with some packages, such as FBGA (fine pitch ball grid array) and QFP (quad flat package), and there are problems with reduced productivity due to the additional assembly process and increased costs due to the high cost of the heat sink. Therefore, there is a strong need for epoxy resin encapsulation molding materials with high thermal conductivity and high heat dissipation. Some semiconductor packages use spherical aluminum oxide (alumina).

[0004] Alumina has a thermal conductivity of 25-30 W / m·K. However, the epoxy resin contained in encapsulating epoxy resin compositions has a very low thermal conductivity of 0.2 W / m·K, limiting the ability to increase the thermal conductivity of encapsulating layers formed with the composition to above 6 W / m·K. Furthermore, copper, aluminum, or silver particles, which have high thermal conductivity, have poor insulating properties. Fillers with relatively good insulating properties, such as aluminum nitride, boron nitride, and silicon carbide, have poor fluidity, making it difficult to increase the filling rate. While there have been many examples of increasing the thermal conductivity of epoxy resins in recent years, the commercialization of compression-encapsulated semiconductor materials with excellent insulating properties and thermosetting properties has yet to be achieved.

[0005] Therefore, it is necessary to develop an epoxy resin composition for encapsulating semiconductor elements that can suppress malfunctions and defects in semiconductor packages due to heat by applying an epoxy resin that has higher thermal conductivity and fluidity than conventional epoxy resins, thereby increasing thermal conductivity and improving heat dissipation effects. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent Publication No. 10-2017-0152632 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide an epoxy resin composition for encapsulating semiconductor elements which has high thermal conductivity, a significantly improved heat dissipation effect, and improved flowability. [Means for solving the problem]

[0008] The epoxy resin composition for semiconductor element encapsulation of the present invention comprises an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst, and the epoxy resin comprises an epoxy resin represented by the following Chemical Formula 1:

[0009] [ka]

[0010] In the above Chemical Formula 1, X is O, S, C(═O), an alkylene group having 1 to 5 carbon atoms, or NH; R 1 , R 2 , R 3 , R 4 , and R 5 one of the groups is a group represented by the following chemical formula 2, and the rest are each independently a hydrogen atom, a halogen atom, an amino group (-NH), a cyano group (-CN), a hydroxyl group (-OH), a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms; R 6 , R 7 , R 8 , R 9 , and R 10 one of which is a group represented by the following chemical formula 2, and the rest are each independently a hydrogen atom, a halogen atom, an amino group, a cyano group, a hydroxyl group, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms:

[0011] [ka]

[0012] In the above Chemical Formula 2, * indicates a connection point. R 11 is a substituted or unsubstituted alkylene group having 1 to 10 carbon atoms. [Effects of the Invention]

[0013] The semiconductor element of the present invention is encapsulated with the epoxy resin composition for semiconductor element encapsulation of the present invention.

[0014] According to the present invention, there is provided an epoxy resin composition for encapsulating semiconductor elements which has high thermal conductivity, a significantly improved heat dissipation effect, and improved flowability. DETAILED DESCRIPTION OF THE INVENTION

[0015] In this specification, when describing a numerical range, "X to Y" means X or more and Y or less.

[0016] In this specification, the term "substituted" in "substituted or unsubstituted" means that one or more hydrogen atoms of the functional group in question are substituted with a hydroxyl group, an amino group, a nitro group, a cyano group, an alkyl group having 1 to 20 carbon atoms, a haloalkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, a heteroaryl group having 3 to 30 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, a heterocycloalkyl group having 3 to 10 carbon atoms, an arylalkyl group having 7 to 30 carbon atoms, or a heteroalkyl group having 1 to 30 carbon atoms.

[0017] To impart high thermal conductivity to epoxy resin compositions for semiconductor element encapsulation, a relatively large amount of inorganic filler must be used. However, using a large amount of inorganic filler increases the viscosity of the composition, reducing its flowability and potentially affecting the moldability of the semiconductor package. One possible approach is to use alumina, an inorganic filler with relatively high thermal conductivity. However, the thermal conductivity of the epoxy resin, which is an essential component of the composition, is very low, at approximately 0.2 W / m·K, so there is a limit to how much alumina can improve the composition's thermal conductivity.

[0018] The epoxy resin composition for semiconductor element encapsulation of the present invention comprises an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst, and the epoxy resin comprises an epoxy resin represented by the following Chemical Formula 1. The epoxy resin represented by Chemical Formula 1 has high thermal conductivity, improves the heat dissipation properties of the composition, and also has excellent fluidity.

[0019] Epoxy resin The epoxy resin includes an epoxy resin represented by the following chemical formula 1. The compound represented by the following chemical formula 1 has high thermal conductivity, significantly improving the heat dissipation characteristics of the composition, and also has high fluidity, improving the processability of the composition:

[0020] [ka]

[0021] In the above chemical formula 1, X is O (oxygen atom), S (sulfur atom), C(═O), an alkylene group having 1 to 5 carbon atoms, or NH; R 1 , R 2 , R 3 , R 4 , and R 5 one of the groups is a group represented by the following chemical formula 2, and the rest are each independently a hydrogen atom, a halogen atom, an amino group (-NH), a cyano group (-CN), a hydroxyl group (-OH), a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms; R 6 , R 7 , R 8 , R 9 , and R 10 one of which is a group represented by the following chemical formula 2, and the rest are each independently a hydrogen atom, a halogen atom, an amino group, a cyano group, a hydroxyl group, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms:

[0022] [ka]

[0023] In the above chemical formula 2, * indicates a connection point. R 11 is a substituted or unsubstituted alkylene group having 1 to 10 carbon atoms.

[0024] Preferably, X is O or S, more preferably O.

[0025] Preferably, R 1 , R 2 , R 3 , R 4 , and R 5 Any one of the groups represented by the above chemical formula 2 is a group, and the remaining groups are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. More preferably, R 1 , R 2 , R 3 , R 4 , and R 5 Any one of the groups is a group represented by the above chemical formula 2, and the rest are each independently a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.

[0026] Preferably, R 6 , R 7 , R 8 , R 9 , and R 10 Any one of the groups represented by the above chemical formula 2 is a group, and the remaining groups are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. More preferably, R 6 , R 7 , R 8 , R 9 , and R 10 Any one of the groups is a group represented by the above chemical formula 2, and the rest are a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.

[0027] Preferably, R 11 is a substituted or unsubstituted alkylene group having 1 to 5 carbon atoms, and more preferably an alkylene group having 1 to 3 carbon atoms.

[0028] In one specific example, the epoxy resin represented by Chemical Formula 1 may contain at least one compound selected from the group consisting of a compound represented by Chemical Formula 1-1 below, a compound represented by Chemical Formula 1-2 below, and a compound represented by Chemical Formula 1-3 below:

[0029] [ka]

[0030] In the above chemical formula 1-1, the above chemical formula 1-2, and the above chemical formula 1-3, X is as defined in Formula 1 above; R 11 and R 12 are each independently a substituted or unsubstituted alkylene group having 1 to 10 carbon atoms, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , and R 10 are each independently a hydrogen atom, a halogen atom, an amino group, a cyano group, a hydroxyl group, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms.

[0031] In specific examples, in the above chemical formula 1-1, the above chemical formula 1-2, and the above chemical formula 1-3, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , and R 10 are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 3 carbon atoms.

[0032] The epoxy resin represented by Chemical Formula 1 may contain one or more epoxy resins, and may be contained in the epoxy resin composition in an amount of 2 to 17% by mass (e.g., 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, or 17% by mass), preferably 2 to 10% by mass. Within this range, the heat dissipation properties of the composition are improved, and a decrease in the curability of the composition can be prevented.

[0033] The epoxy resin represented by Chemical Formula 1 can be produced by a method for producing a conventional epoxy resin known to those skilled in the art, with reference to Chemical Formula 1. For example, the ..., with reference to Chemical Formula 1. 1 , R 2 , R 3 , R 4 , and R 5 any one of the groups represented by the following chemical formula 3, and R 6 , R 7 , R 8 , R 9 , and R 10 It can be prepared by a general reaction between a substantially identical dicarboxylic acid compound and a compound represented by the following formula 4, except that any one of the following formulas is a group represented by the following formula 3:

[0034] [ka]

[0035] In the above chemical formula 3, * is a linking point:

[0036] [ka]

[0037] In the above chemical formula 4, Y is a halogen atom, R 11 is the same as defined in Chemical Formula 2 above.

[0038] The epoxy resin may further include an epoxy resin other than the epoxy resin represented by Chemical Formula 1. For convenience, the epoxy resin represented by Chemical Formula 1 is referred to as the first epoxy resin, and the epoxy resin other than the epoxy resin represented by Chemical Formula 1 is referred to as the second epoxy resin.

[0039] The second epoxy resin preferably has two or more epoxy groups in the molecule, and may be, for example, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolac type epoxy resin, a tert-butylcatechol type epoxy resin, a naphthalene type epoxy resin, a glycidylamine type epoxy resin, a cresol novolac type epoxy resin, a biphenyl type epoxy resin, a phenol aralkyl type epoxy resin, a linear aliphatic epoxy resin, an alicyclic epoxy resin, a heterocyclic epoxy resin, a spiro ring-containing epoxy resin, a cyclohexane dimethanol type epoxy resin, a trimethylol type epoxy resin, a halogenated epoxy resin, etc. The second epoxy resin may be used alone or in combination of two or more types.

[0040] The epoxy resin may be contained in an amount of preferably 2 to 17 mass% (e.g., 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, or 17 mass%), more preferably 2 to 10 mass%, based on the total mass of the epoxy resin composition. Within this range, a decrease in the curability of the composition can be prevented.

[0041] hardener Examples of curing agents include polyfunctional phenolic resins, phenol aralkyl phenolic resins, phenol novolac phenolic resins, xyloc phenolic resins, cresol novolac phenolic resins, naphthol phenolic resins, terpene phenolic resins, dicyclopentadiene phenolic resins, novolac phenolic resins synthesized from bisphenol A and resol; polyhydric phenolic compounds including tris(hydroxyphenyl)methane and dihydroxybiphenyl; acid anhydrides including maleic anhydride and phthalic anhydride; and aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenyl sulfone. Preferably, the curing agent is a xyloc phenolic resin or a phenol aralkyl phenolic resin.

[0042] The curing agent may be contained in an amount of 0.5 to 13% by mass (e.g., 0.5, 0.6, 0.7, 0.8, 0.9, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, or 13% by mass) in the epoxy resin composition. Within this range, a decrease in the curability of the composition can be prevented.

[0043] inorganic fillers The inorganic filler can improve the mechanical properties and reduce stress of the epoxy resin composition. Furthermore, in the present invention, the inorganic filler can improve the thermal conductivity, enhance the heat dissipation effect, improve the fluidity, and reduce the thermal expansion and water absorption.

[0044] The inorganic filler may include at least one selected from the group consisting of fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, and glass fiber.

[0045] Preferably, the inorganic filler may contain alumina, which has a thermal conductivity of 25 to 30 W / m·K and can easily increase the thermal conductivity of the composition.

[0046] The shape of the alumina is not limited and may be spherical or non-spherical. A spherical shape can improve the fluidity of the composition. The alumina may have an average particle size (D50) of preferably 0.5 to 50 μm, more preferably 0.5 to 30 μm. A particle size within this range can provide good fluidity and thermal conductivity. In one specific example, the alumina may comprise a mixture of two types of alumina having different average particle sizes (D50). For example, the alumina may be mixed in a mass ratio of the first alumina to the second alumina of preferably 1:1 to 10:1, and the average particle size (D50) of the first alumina may be larger than the average particle size (D50) of the second alumina. The alumina may be pre-coated with an epoxy resin or a curing agent, if necessary, before being incorporated into the composition.

[0047] The amount of inorganic filler used may vary depending on the required physical properties, such as thermal conductivity, moldability, low stress, and high-temperature strength. In a specific example, the inorganic filler may be contained in an amount of 70 to 95% by mass (e.g., 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, or 95% by mass) based on the total mass of the epoxy resin composition. Within this range, the flame retardancy, fluidity, and reliability of the epoxy resin composition can be ensured.

[0048] curing catalyst Examples of curing catalysts that can be used include tertiary amine compounds, organometallic compounds, organophosphorus compounds, imidazole compounds, and boron compounds. Examples of tertiary amine compounds include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(diaminomethyl)phenol, and tri-2-ethylhexyl salt. Examples of organometallic compounds include chromium(III) acetylacetonate, zinc(II) acetylacetonate, and nickel(II) acetylacetonate. Examples of organophosphorus compounds include triphenylphosphine, tris-4-methoxyphosphine, triphenylphosphine triphenylborane, and triphenylphosphine-1,4-benzoquinone adduct. Examples of imidazole compounds include 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, and 2-heptadecylimidazole. Examples of boron compounds include triphenylphosphine tetraphenylborate, tetraphenylboron salt, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine, and tetrafluoroborane amine. In addition to these, 1,5-diazabicyclo[4.3.0]non-5-ene (DBN), 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU), and phenol novolac resin salts can also be used.

[0049] As the curing catalyst, an adduct obtained by previously reacting the epoxy resin with a curing agent can also be used.

[0050] The curing catalyst may be contained in an amount of 0.01 to 5% by mass (e.g., 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 2, 3, 4, or 5% by mass) relative to the total mass of the epoxy resin composition. Within this range, the curing reaction time is not delayed and the fluidity of the composition can be ensured.

[0051] The epoxy resin composition may further contain typical additives that can be contained in epoxy resin compositions for semiconductor element encapsulation. In specific examples, the additives may include at least one selected from the group consisting of a coupling agent, a release agent, a colorant, a stress relaxation agent, a crosslinking promoter, and a leveling agent.

[0052] The coupling agent reacts between the epoxy resin and the inorganic filler to improve the interfacial strength, and a silane coupling agent, for example, can be used. The silane coupling agent is not particularly limited as long as it reacts between the epoxy resin and the inorganic filler to improve the interfacial strength between the epoxy resin and the inorganic filler. Specific examples of silane coupling agents include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and alkylsilane. The coupling agent can be used alone or in combination with two or more types. The coupling agent is preferably contained in an amount of 0.01 to 5% by mass, more preferably 0.05 to 3% by mass, based on the total mass of the epoxy resin composition for semiconductor element encapsulation. Within this range, the strength of the cured product of the epoxy resin composition can be improved.

[0053] The release agent may be at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid, and natural fatty acid metal salt. The release agent may be contained in an amount of 0.1 to 1% by mass based on the total mass of the epoxy resin composition.

[0054] Carbon black can be used as the colorant, and the colorant can be contained in an amount of 0.1 to 1% by mass relative to the total mass of the epoxy resin composition.

[0055] The stress relaxation agent may be at least one selected from the group consisting of modified silicone oil, silicone elastomer, silicone powder, and silicone resin, but is not limited thereto. When a stress relaxation agent is contained, the content thereof may be more than 0% by mass and not more than 2% by mass, for example, more than 0% by mass and not more than 1% by mass, for example, 0.1 to 1% by mass, relative to the total mass of the epoxy resin composition.

[0056] The additives may be contained in an amount of 0.1 to 5 mass %, for example 0.1 to 3 mass %, relative to the total mass of the epoxy resin composition.

[0057] The method for producing the epoxy resin composition is not particularly limited, but the composition can be produced by uniformly mixing the components contained in the composition using a Henschel mixer (registered trademark) or a Loedige mixer, melt-kneading the components at 90 to 120°C using a roll mill or kneader, and then cooling and pulverizing the components.

[0058] The semiconductor element of the present invention is encapsulated using the epoxy resin composition for semiconductor element encapsulation of the present invention. Methods for encapsulating semiconductor elements using the epoxy resin composition for semiconductor element encapsulation of the present invention include, but are not limited to, transfer molding, injection molding, casting molding, compression molding, and the like. In one specific example, encapsulation can be performed by low-pressure transfer molding. In another specific example, encapsulation can be performed by compression molding. [Example]

[0059] The present invention will be described in more detail with reference to preferred embodiments thereof below, but these are merely preferred examples of the present invention and should not be construed as limiting the present invention in any way.

[0060] Production Example 1: Production of epoxy resin An excess amount of a compound represented by the following chemical formula 5-2 was added to a compound represented by the following chemical formula 5-1, and the mixture was reacted while stirring and heating at 110°C. After the reaction mixture was cooled to room temperature, the remaining unreacted compound represented by the following chemical formula 5-2 was removed using a rotary evaporator (bath temperature: 50°C, pressure: 30 mbar). The resulting compound was dissolved in toluene, and the mixture was heated to 80°C. After adding an aqueous NaOH solution and reacting, the reaction mixture was filtered, and the remaining solvent was removed using a rotary evaporator to produce an epoxy resin represented by the following chemical formula 5.

[0061] [ka]

[0062] Production Example 2: Production of epoxy resin An excess amount of the compound represented by the above chemical formula 5-2 was added to the compound represented by the following chemical formula 6-1, and the mixture was reacted while heating to 110°C. After the reaction mixture was cooled to room temperature, the remaining unreacted compound represented by the chemical formula 5-2 was removed using a rotary evaporator (bath temperature: 50°C, pressure: 30 mbar). The resulting compound was dissolved in toluene, and the reaction mixture was heated to 80°C. After adding an aqueous NaOH solution and reacting, the reaction mixture was filtered, and the solvent was removed using a rotary evaporator to produce an epoxy resin represented by the following chemical formula 6.

[0063] [ka]

[0064] The specific specifications of the components used in the following examples and comparative examples are as follows: (A) Epoxy resin (A1) Epoxy resin of Production Example 1 (A2) Epoxy resin of Production Example 2 (A3) NC-3000 (phenol aralkyl type epoxy resin, manufactured by Nippon Kayaku Co., Ltd.) (A4) EPPN-501HY (multifunctional epoxy resin, manufactured by Nippon Kayaku Co., Ltd.) (A5) Epoxy resin represented by the following chemical formula 7

[0065] [ka]

[0066] (B) Hardener (B1) KPH-F3065 (Xylok type phenolic resin, manufactured by Kolon Chemical Co.) (B2) MEH-7851 (phenol aralkyl type phenolic resin, manufactured by Meiwa Kasei Co., Ltd.) (C) Curing catalyst: triphenylphosphine (manufactured by Hokko Chemical Industry Co., Ltd.) (D) Inorganic filler: a mixture of spherical fused alumina with an average particle size (D50) of 20 μm and spherical fused alumina with an average particle size (D50) of 0.5 μm in a 9:1 mass ratio. (E) Coupling Agent (E1) Methyltrimethoxysilane (SZ-6070, manufactured by Dow Corning) (E2) KBM-573 (N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.) (F) Carbon black (MA-600B, manufactured by Mitsubishi Chemical Corporation).

[0067] Examples 1 to 5 and Comparative Examples 1 to 4 According to the composition (unit: parts by mass) shown in Table 1 below, components (A) to (F) were uniformly mixed for 30 minutes at 25 to 30°C using a Henschel mixer (registered trademark) (KEUM SUNG MACHINERY CO. LTD, KSM-22). The mixture was then melt-kneaded for 30 minutes at a maximum temperature of 110°C using a continuous kneader. The mixture was then cooled to 10 to 15°C and pulverized to produce an epoxy resin composition for semiconductor element encapsulation. In Table 1 below, "-" indicates that the corresponding component was not included.

[0068] The produced epoxy resin compositions for semiconductor element encapsulation were evaluated for the following physical properties, and the results are shown in Table 1 below.

[0069] (1) Fluidity (unit: inch): Using a low-pressure transfer molding machine, the fluidity measurement mold was tested in accordance with EMMI-1-66 at a mold temperature of 175°C and 70 kgf / cm 2 The epoxy resin composition for semiconductor element encapsulation was injected under conditions of an injection pressure of 9 MPa and a curing time of 90 seconds, and the flow length was measured. The higher the measured value, the better the flowability.

[0070] (2) Thermal conductivity (unit: W / m·K): Test specimens for evaluation were prepared from the epoxy resin composition in accordance with ASTM D5470, and the thermal conductivity was measured at 25°C.

[0071] (3) Semiconductor surface temperature (unit: °C): A test semiconductor element was mounted on a board and then connected by wire bonding. Then, an epoxy resin composition for semiconductor element encapsulation was molded onto the test semiconductor element to a thickness of 500 μm at 175 °C for 120 seconds. After placing it in a test facility and applying voltage, the semiconductor was operated, and the temperature of the semiconductor package surface after 1 hour was measured using a non-contact thermometer.

[0072] [Table 1]

[0073] As shown in Table 1 above, it was confirmed that the epoxy resin composition for encapsulating semiconductor elements of the present invention has excellent fluidity and high thermal conductivity, and therefore has excellent heat dissipation properties, and is effective in maintaining a low semiconductor surface temperature during semiconductor operation.

[0074] On the other hand, the comparative compositions not containing the epoxy resin represented by Chemical Formula 1 of the present invention had problems such as poor heat dissipation properties due to low thermal conductivity or difficulty in molding due to low fluidity.

[0075] Simple variations or modifications of the present invention can be easily implemented by a person having ordinary skill in the art, and all such variations and modifications can be considered to be included within the scope of the present invention.

Claims

1. An epoxy resin composition for encapsulating a semiconductor element, comprising an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst, wherein the epoxy resin comprises an epoxy resin represented by the following Chemical Formula 1: The inorganic filler includes alumina, The epoxy resin composition for semiconductor element encapsulation comprises, relative to the total mass of the epoxy resin composition, 2 to 17% by mass of the epoxy resin, 0.5 to 13% by mass of the curing agent, 70 to 95% by mass of the inorganic filler, and 0.01 to 5% by mass of the curing catalyst: 【Chemical 1】 In the above Chemical Formula 1, X is O, S, C(═O), an alkylene group having 1 to 5 carbon atoms, or NH; R １ , R ２ , R ３ , R ４ , and R ５ is a group represented by the following chemical formula 2, and the remaining groups are each independently a hydrogen atom, a halogen atom, an amino group (—NH ２ ), a cyano group (—CN), a hydroxyl group (—OH), a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms; R ６ , R ７ , R ８ , R ９ , and R １０ one of which is a group represented by the following chemical formula 2, and the rest are each independently a hydrogen atom, a halogen atom, an amino group, a cyano group, a hydroxyl group, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms: 【Chemistry 2】 In the above chemical formula 2, * represents a linking point; R １１ is a substituted or unsubstituted alkylene group having 1 to 10 carbon atoms.

2. The epoxy resin composition for semiconductor element encapsulation according to claim 1, wherein the epoxy resin represented by Chemical Formula 1 comprises at least one selected from the group consisting of an epoxy resin represented by the following Chemical Formula 1-1, an epoxy resin represented by the following Chemical Formula 1-2, and an epoxy resin represented by the following Chemical Formula 1-3: 【Chemistry 3】 In the above Chemical Formula 1-1, Chemical Formula 1-2, and Chemical Formula 1-3, X is as defined in Formula 1; R １１ and R １２ are each independently a substituted or unsubstituted alkylene group having 1 to 10 carbon atoms, R １ , R ２ , R ３ , R ４ , R ５ , R ６ , R ７ , R ８ , R ９ , and R １０ are each independently a hydrogen atom, a halogen atom, an amino group, a cyano group, a hydroxyl group, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted arylalkyl group having 7 to 20 carbon atoms.

3. In the chemical formula 1-1, the chemical formula 1-2, and the chemical formula 1-3, R １ , R ２ , R ３ , R ４ , R ５ , R ６ , R ７ , R ８ , R ９ , and R １０ and each independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 3 carbon atoms.

4. A semiconductor element encapsulated with the epoxy resin composition for semiconductor element encapsulation according to any one of claims 1 to 3.

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