Optical devices and optical communication devices

Abstract

To provide an optical device for improving electric field application efficiency.SOLUTION: An optical device provided herein comprises an optical waveguide, a buffer layer laminated on the optical waveguide, and electrodes disposed on a surface of the buffer layer laminated on a site near the optical waveguide and configured to be used to apply an electric signal to the optical waveguide. Further, the optical device has slits formed on the buffer layer to extend to near the optical waveguide from the surface of the buffer layer and filled by portions of the electrodes.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to an optical device and an optical communication apparatus. [Background technology]

[0002] A conventional optical modulator consists of, for example, an optical waveguide provided on a substrate and a modulation section provided nearby. The modulation section has a signal electrode and a ground electrode. When a voltage is applied to the signal electrode, an electric field is generated in the optical waveguide, which changes the refractive index of the optical waveguide and the phase of the light. The optical waveguide forms a Mach-Zehnder interferometer, and the optical output changes depending on the difference in the phase of the light between the optical waveguides.

[0003] The optical modulator integrates, for example, a four-channel Mach-Zehnder modulator. Each Mach-Zehnder interferometer has an RF modulation section and a DC modulation section. A high-frequency signal with a bandwidth of, for example, several tens of GHz is input to the electrodes of the RF modulation section to perform high-speed modulation. A bias voltage is applied to the electrodes of the DC modulation section, and the bias voltage is adjusted so that the ON / OFF of the electrical signal corresponds to the ON / OFF of the optical signal.

[0004] The optical waveguides of the optical modulator constitute, for example, a Mach-Zehnder interferometer, and output, for example, an XY polarization multiplexed IQ signal due to the optical phase difference between multiple parallel optical waveguides. Then, two channels of the four-channel output are combined to generate two IQ signals, one of which is subjected to polarization rotation and polarization multiplexed by a polarization beam combiner before being output.

[0005] On the other hand, there is a diffused optical waveguide, which is formed by diffusing a metal such as titanium from the substrate surface at a position that does not overlap with the signal electrode. However, this diffused optical waveguide has low light confinement, resulting in poor electric field application efficiency and high drive voltage. To address this, there is a thin-film optical waveguide, in which an optical waveguide using a thin film of LN (lithium niobate) crystal is formed at a position that does not overlap with the signal electrode. Thin-film optical waveguides can confine light more strongly than diffused optical waveguides that use diffused metal, improving electric field application efficiency and reducing drive voltage.

[0006] The optical modulator has an RF modulation section and a DC modulation section. Fig. 9 is a schematic cross-sectional view showing an example of a DC modulation section 200 of an optical modulator. The DC modulation section 200 shown in Fig. 9 has a support substrate 201 made of Si (silicon) or the like, and an intermediate layer 202 stacked on the support substrate 201. Furthermore, the DC modulation section 200 has a thin-film LN substrate 203 stacked on the intermediate layer 202, and a buffer layer 204 made of SiO2 stacked on the thin-film LN substrate 203.

[0007] A thin-film LN substrate 203 is formed with a thin-film optical waveguide 207 having a convex shape that protrudes upward. The thin-film LN substrate 203 and the thin-film optical waveguide 207 are covered with a buffer layer 204, and a signal electrode 205 and a pair of ground electrodes 206 having a coplanar (CPW) structure are disposed on the surface of the buffer layer 204. That is, the signal electrode 205 and the pair of ground electrodes 206 sandwiching the signal electrode 205 are disposed on the buffer layer 204. The buffer layer 204 can prevent light propagating through the thin-film optical waveguide 207 from being absorbed by the signal electrode 205 and the ground electrodes 206.

[0008] A convex thin-film optical waveguide 207 is formed on the thin-film LN substrate 203 located between the signal electrode 205 and the ground electrode 206. The convex thin-film optical waveguide 207 has a side surface 207A and a flat surface 207B. Furthermore, the buffer layer 204 located between the signal electrode 205 and the ground electrode 206 also has a step 204A that covers the entire convex thin-film optical waveguide 207.

[0009] With such a thin film optical waveguide 207, it is possible to modulate light propagating through the thin film optical waveguide 207 by applying a driving voltage of an electric signal to the signal electrode 205 to generate an electric field and changing the refractive index of the thin film optical waveguide 207. The RF modulation section also has almost the same structure as the DC modulation section 200, although it differs in that a high frequency signal is applied to the signal electrode 205 instead of a driving voltage, and therefore a description of its configuration and operation will be omitted. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-279865 [Patent Document 2] Japanese Patent Publication No. 2020-181070 [Patent Document 3] US Patent Application Publication No. 2002 / 0146190 Summary of the Invention [Problem to be solved by the invention]

[0011] In the thin film optical waveguide 207 of the optical modulator, the buffer layer 204 serves as a cladding, and therefore the mode field of light propagating through the thin film optical waveguide 207 penetrates into the buffer layer 204. Therefore, in order to prevent the light from the thin film optical waveguide 207 from being absorbed by the signal electrode 205 and the ground electrode 206, it is necessary to increase the thickness of the buffer layer 204. However, when the thickness of the buffer layer 204 is increased, the electric field applied to the thin film optical waveguide 207 becomes smaller, and the efficiency of applying the electric field decreases.

[0012] The disclosed technology has been made in view of the above points, and aims to provide an optical device or the like that improves the efficiency of applying an electric field. [Means for solving the problem]

[0013] In one aspect, the optical device disclosed herein comprises an optical waveguide, a buffer layer stacked on the optical waveguide, and an electrode disposed on the surface of the buffer layer stacked in the vicinity of the optical waveguide and configured to apply an electric signal to the optical waveguide. The optical device further comprises a slit formed in the buffer layer, extending from the surface of the buffer layer to the vicinity of the optical waveguide and filled with a portion of the electrode. [Effects of the Invention]

[0014] According to one aspect of the optical device etc. disclosed in the present application, it is possible to improve the efficiency of applying an electric field. [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 1 is a block diagram illustrating an example of the configuration of an optical communication device according to a first embodiment. [Figure 2] FIG. 2 is a schematic plan view showing an example of the configuration of the optical modulator according to the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view illustrating an example of a first DC modulation unit of the optical modulator according to the first embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view illustrating an example of a first DC modulation unit of an optical modulator according to a second embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional view illustrating an example of a first DC modulation unit of an optical modulator according to a third embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view showing an example of a first DC modulation unit of an optical modulator according to a fourth embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view illustrating an example of a first DC modulation unit of an optical modulator according to a fifth embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view showing an example of a first DC modulation unit of an optical modulator according to a sixth embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view showing an example of a DC modulation section of an optical modulator. DETAILED DESCRIPTION OF THE INVENTION

[0016] Hereinafter, embodiments of the optical device and the like disclosed in the present application will be described in detail with reference to the drawings. However, the present invention is not limited to these embodiments. [Example]

[0017] FIG. 1 is a block diagram showing an example of the configuration of an optical communication device 1 according to a first embodiment. The optical communication device 1 shown in FIG. 1 is connected to an optical fiber 2A(2) on the output side and an optical fiber 2B(2) on the input side. The optical communication device 1 includes a DSP (Digital Signal Processor) 3, a light source 4, an optical modulator 5, and an optical receiver 6. The DSP 3 is an electrical component that performs digital signal processing. For example, the DSP 3 performs processing such as encoding of transmission data, generates an electrical signal including the transmission data, and outputs the generated electrical signal to the optical modulator 5. The DSP 3 also obtains an electrical signal including reception data from the optical receiver 6 and performs processing such as decoding of the obtained electrical signal to obtain the reception data.

[0018] The light source 4 includes, for example, a laser diode, and generates light of a predetermined wavelength and supplies it to the optical modulator 5 and the optical receiver 6. The optical modulator 5 is an optical device that modulates the light supplied from the light source 4 with an electrical signal output from the DSP 3 and outputs the resulting optical transmission signal to the optical fiber 2A. The optical modulator 5 is, for example, an optical device such as an LN optical modulator that includes an LN (Lithium Niobate) optical waveguide and a modulation unit. The LN optical waveguide is formed from an LN crystal substrate. The optical modulator 5 generates an optical transmission signal by modulating the light supplied from the light source 4 with an electrical signal input to the modulation unit as the light propagates through the LN optical waveguide.

[0019] The optical receiver 6 receives an optical signal from the optical fiber 2B and demodulates the received optical signal using light supplied from the light source 4. The optical receiver 6 then converts the demodulated received optical signal into an electrical signal and outputs the converted electrical signal to the DSP 3.

[0020] FIG. 2 is a schematic plan view showing an example of the configuration of an optical modulator 5 according to a first embodiment. The optical modulator 5 shown in FIG. 2 has an input side connected to an optical fiber 4A from a light source 4 and an output side connected to an optical fiber 2A for transmitting a transmission signal. The optical modulator 5 includes a first optical input unit 11, an RF (Radio Frequency) modulation unit 12, a DC (Direct Current) modulation unit 13, and a first optical output unit 14. The first optical input unit 11 includes a first optical waveguide 11A and a first waveguide junction unit 11B. The first optical waveguide 11A includes one optical waveguide connected to the optical fiber 4A, two optical waveguides branching from the one optical waveguide, four optical waveguides branching from each of the two optical waveguides, and eight optical waveguides branching from each of the four optical waveguides. The first waveguide junction 11B joins the eight optical waveguides in the first optical waveguide 11A and the eight LN optical waveguides in the LN optical waveguide .

[0021] The RF modulation unit 12 includes an LN optical waveguide 21, an electrode unit 22, and an RF terminator 23. When light supplied from the first optical waveguide 11A propagates through the LN optical waveguide 21, the RF modulation unit 12 modulates the light by an electric field applied from the signal electrode 22A of the electrode unit 22. The LN optical waveguide 21 is an optical waveguide formed, for example, using a thin-film LN substrate 53, and has eight parallel LN optical waveguides that branch repeatedly from the input side. The modulated light propagating through the LN optical waveguide 21 is output to a first DC modulation unit 32 in the DC modulation unit 13. The thin-film LN substrate 53 is an X-cut substrate whose refractive index increases when a DC voltage is applied in the direction of the X axis of the crystal.

[0022] The signal electrode 22A in the electrode section 22 is provided at a position that does not overlap the LN optical waveguide 21, and applies an electric field to the LN optical waveguide 21 in response to the electrical signal output from the DSP 3. The terminal end of the signal electrode 22A in the electrode section 22 is connected to an RF terminator 23. The RF terminator 23 is connected to the terminal end of the signal electrode 22A, and prevents unnecessary reflection of the signal transmitted by the signal electrode 22A.

[0023] The DC modulation unit 13 has an LN optical waveguide 31 joined to the LN optical waveguide 21 of the RF modulation unit 12, a first DC modulation unit 32, and a second DC modulation unit 33. The first DC modulation unit 32 is made up of four child MZs (Mach-Zehnder). The second DC modulation unit 33 is made up of two parent MZs. The first DC modulation unit 32 has the LN optical waveguide 31 and an electrode unit 22.

[0024] The LN optical waveguide 31 has eight LN optical waveguides and four LN optical waveguides that merge with two of the eight LN optical waveguides. A first DC modulation unit 32 is provided for every two LN optical waveguides of the eight LN optical waveguides 31. The first DC modulation unit 32 applies a bias voltage to the signal electrode 22A on the LN optical waveguide 31, adjusts the bias voltage so that the ON / OFF of the electrical signal corresponds to the ON / OFF of the optical signal, and outputs an I signal of the in-phase axis component or a Q signal of the quadrature axis component. A second DC modulation unit 33 is provided for every two LN optical waveguides of the four LN optical waveguides in the LN optical waveguide 31. The second DC modulation unit 33 applies a bias voltage to the signal electrode 22A on the LN optical waveguide 31, adjusts the bias voltage so that the ON / OFF of the electrical signal corresponds to the ON / OFF of the optical signal, and outputs an I signal or a Q signal.

[0025] The first optical output unit 14 has a second waveguide junction 41, a second optical waveguide 42, a PR (Polarization Rotator) 43, and a PBC (Polarization Beam Combiner) 44. The second waveguide junction 41 joins the LN optical waveguide 31 in the DC modulation unit 13 with the second optical waveguide 42. The second optical waveguide 42 has four optical waveguides connected to the second waveguide junction 41 and two optical waveguides that merge with two of the four optical waveguides.

[0026] The PR 43 rotates the I signal or Q signal input from one of the second DC modulation units 33 by 90 degrees to obtain a vertically polarized optical signal after the 90-degree rotation. The PR 43 then inputs the vertically polarized optical signal to the PBC 44. The PBC 44 multiplexes the vertically polarized optical signal from the PR 43 with the horizontally polarized optical signal input from the other second DC modulation unit 33, and outputs a polarization multiplexed signal.

[0027] Next, the configuration of the optical modulator 5 of the first embodiment will be specifically described. FIG. 3 is a schematic cross-sectional view showing an example of the first DC modulation unit 32 of the optical modulator 5 of the first embodiment. Since the first DC modulation unit 32 and the second DC modulation unit 33 have the same configuration, the same reference numerals are used to describe the configuration and operation of the second DC modulation unit 33, and redundant description of the configuration and operation will be omitted. The first DC modulation unit 32 shown in FIG. 3 includes a support substrate 51 and an intermediate layer 52 stacked on the support substrate 51. The first DC modulation unit 32 further includes a thin-film LN substrate 53, which is a thin-film substrate, stacked on the intermediate layer 52, a buffer layer 54 stacked on the thin-film LN substrate 53, and an electrode unit 22 arranged on the buffer layer 54. The electrode unit 22 includes a signal electrode 22A and a pair of ground electrodes 22B.

[0028] A thin-film optical waveguide 60 having a protruding stripe shape that protrudes upward is formed on the thin-film LN substrate 53. The thin-film optical waveguide 60 is the LN optical waveguide 31 of the DC modulation section 13. The thin-film LN substrate 53 and the thin-film optical waveguide 60 are covered with a buffer layer 54. The buffer layer 54 is provided to prevent light propagating through the thin-film optical waveguide 60 from being absorbed by the electrode section 22. A slit 70 (70A) is formed in the buffer layer 54, extending from the buffer layer surface 54C to near the thin-film optical waveguide 60. The slit 70A extends vertically from the arrangement surface 54C of the buffer layer 54, on which the electrode section 22 is arranged, to the surface of the buffer layer 54. The slit 70A extending vertically from the arrangement surface 54C of the buffer layer 54 is formed by, for example, etching or forming a void by sputtering.

[0029] A convex thin-film optical waveguide 60 is formed on the thin-film LN substrate 53 located between the signal electrode 22A and the ground electrode 22B. The thin-film optical waveguide 60 is a protruding rib-type optical waveguide provided at a predetermined position on the thin-film LN substrate 53. The convex thin-film optical waveguide 60 has a flat surface 60A and a side surface 60B. Furthermore, the buffer layer 54 located between the signal electrode 22A and the ground electrode 22B also has a step portion 54B that covers the entire convex thin-film optical waveguide 60. The step portion 54B that covers the side surface 60B of the thin-film optical waveguide 60 separates the ground electrode 22B from the signal electrode 22A.

[0030] The electrode portion 22 is disposed on the placement surface 54C of the buffer layer surface laminated in a portion near the thin film optical waveguide 60, with a portion 221 of the electrode filling the slit 70A and applying a drive voltage to the thin film optical waveguide 60. The signal electrode 22A disposed on the placement surface 54C of the buffer layer 54 has a portion 221 of the electrode filling the slit 70A and an end of the portion 221 of the electrode close to the side surface 60B of the thin film optical waveguide 60. The ground electrode 22B disposed on the placement surface 54C of the buffer layer 54 has a portion 221 of the electrode filling the slit 70A and an end of the portion 221 of the electrode close to the side surface 60B of the thin film optical waveguide 60.

[0031] A thin-film LN substrate 53 having a thickness of 0.5 to 3 μm is sandwiched between the intermediate layer 52 and the buffer layer 54, and a thin-film optical waveguide 60 having a convex shape that protrudes upward is formed on the thin-film LN substrate 53. The width of the protrusion that becomes the thin-film optical waveguide 60 is, for example, about 1 to 8 μm. The thin-film LN substrate 53 and the thin-film optical waveguide 60 are covered with the buffer layer 54.

[0032] Moreover, it is desirable that the signal electrode 22A be made of a material that has small high frequency loss and is different from that of the ground electrode 22B.

[0033] The signal electrode 22A is made of a metal material such as gold or copper and has a width of 2 to 10 μm and a thickness of 1 to 20 μm. The ground electrode 22B is made of a metal material such as gold or copper and has a thickness of 1 μm or more. When a drive voltage corresponding to an electrical signal output from the DSP 3 is transmitted by the signal electrode 22A, an electric field is generated in a direction from the signal electrode 22A to the ground electrode 22B, and this electric field is applied to the thin film optical waveguide 60. As a result, the refractive index of the thin film optical waveguide 60 changes in response to the application of the electric field to the thin film optical waveguide 60, making it possible to modulate the light propagating through the thin film optical waveguide 60.

[0034] The first DC modulation section 32 of the first embodiment has a slit 70A formed in the buffer layer 54, extending from the surface of the buffer layer 54 to the vicinity of the thin-film optical waveguide 60 and filled with a portion of an electrode. In the first DC modulation section 32, a portion 221 of the electrode of the ground electrode 22B and a portion 221 of the electrode of the signal electrode 22A are disposed within the slit 70A. In the first DC modulation section 32, the distance between the ground electrode 22B and the thin-film optical waveguide 60 and the distance between the signal electrode 22A and the thin-film optical waveguide 60 are shortened, so that the electric field applied to the thin-film optical waveguide 60 is strengthened. As a result, even when the thickness of the buffer layer 54 is increased, the driving voltage can be reduced by improving the efficiency of electric field application.

[0035] While FIG. 3 illustrates the first DC modulation section 32, the second DC modulation section 33 has the same configuration. The second DC modulation section 33 has a slit 70A formed in the buffer layer 54, extending from the surface of the buffer layer 54 to the vicinity of the thin-film optical waveguide 60 and partially filled with an electrode. In the second DC modulation section 33, a part 221 of the electrode of the ground electrode 22B and a part 221 of the electrode of the signal electrode 22A are disposed within the slit 70A. In the second DC modulation section 33, the distance between the ground electrode 22B and the thin-film optical waveguide 60 and the distance between the signal electrode 22A and the thin-film optical waveguide 60 are shortened, thereby strengthening the electric field applied to the thin-film optical waveguide 60. As a result, even when the thickness of the buffer layer 54 is increased, the efficiency of electric field application is improved, thereby reducing the driving voltage.

[0036] The RF modulation section 12 also has almost the same configuration as the first DC modulation section 32. The difference between the first DC modulation section 32 and the RF modulation section 12 is that a high-frequency signal is applied to the signal electrode 22A instead of a drive voltage. Therefore, a description of the overlapping configuration and operation will be omitted. The thin-film optical waveguide 60 corresponds to the LN optical waveguide 21 of the RF modulation section 12. The RF modulation section 12 has a slit 70A formed in the buffer layer 54, extending from the surface of the buffer layer 54 to near the thin-film optical waveguide 60 and partially filled with an electrode. In the RF modulation section 12, a portion 221 of the electrode of the ground electrode 22B and a portion 221 of the electrode of the signal electrode 22A are disposed within the slit 70A. In the RF modulation section 12, the distance between the ground electrode 22B and the thin-film optical waveguide 60 and the distance between the signal electrode 22A and the thin-film optical waveguide 60 are shortened, thereby strengthening the electric field applied to the thin-film optical waveguide 60. As a result, even if the thickness of the buffer layer 54 is increased, the driving voltage can be reduced by improving the efficiency of applying an electric field.

[0037] Moreover, the optical modulator 5 has a rib-type thin-film optical waveguide 60 formed using an X-cut thin-film LN substrate 53, so that modulation can be easily performed by applying a horizontal electric field to the thin-film optical waveguide 60.

[0038] In the first DC modulation section 32 of Example 1, an example is given in which the slit 70A is arranged in a direction perpendicular to the arrangement surface 54A of the buffer layer 54, but this is not limited to this, and an embodiment thereof will be described below as Example 2. [Example]

[0039] 4 is a schematic cross-sectional view showing an example of the first DC modulation section 32 of the optical modulator 5 of the second embodiment. The same components as those in the optical modulator 5 of the first embodiment are denoted by the same reference numerals, and redundant explanations of the components and operations will be omitted. The first DC modulation section 32 shown in FIG. 4 differs from the first DC modulation section 32 shown in FIG. 3 in that the slit 70B extends obliquely from the arrangement surface 54A of the buffer layer 54 toward the side surface 60B of the thin-film optical waveguide 60. The slit 70B is filled with a part 221 of the electrode of the electrode section 22.

[0040] The electrode portion 22 is disposed on an arrangement surface 54C of the surface of the buffer layer 54 laminated in a portion near the thin film optical waveguide 60, and a part 221 of the electrode fills the slit 70A from the arrangement surface 54C, thereby applying a drive voltage to the thin film optical waveguide 60. The signal electrode 22A disposed on the arrangement surface 54C of the buffer layer 54 has the part 221 of the electrode filled in the slit 70B, and the tip of the part 221 of the electrode close to the side surface 60B of the thin film optical waveguide 60. The ground electrode 22B disposed on the arrangement surface 54C of the buffer layer 54 has the part 221 of the electrode filled in the slit 70B, and the tip of the part 221 of the electrode close to the side surface 60B of the thin film optical waveguide 60.

[0041] In the first DC modulation section 32 of the second embodiment, a part 221 of the ground electrode 22B and a part 221 of the signal electrode 22A are arranged in a slit 70B extending obliquely near the side surface 60B of the thin film optical waveguide 60. In the first DC modulation section 32, the distance between the ground electrode 22B and the thin film optical waveguide 60 and the distance between the signal electrode 22A and the thin film optical waveguide 60 are made shorter than in the first embodiment, so that the electric field applied to the thin film optical waveguide 60 is strengthened. As a result, even when the thickness of the buffer layer 54 is increased, the driving voltage can be reduced by improving the efficiency of application of the electric field.

[0042] In the second DC modulation section 33, a part 221 of the ground electrode 22B and a part 221 of the signal electrode 22A are arranged in a slit 70B extending obliquely near the side surface 60B of the thin film optical waveguide 60. In the second DC modulation section 33, the distance between the ground electrode 22B and the thin film optical waveguide 60 and the distance between the signal electrode 22A and the thin film optical waveguide 60 are made shorter than in Example 1, so that the electric field applied to the thin film optical waveguide 60 is strengthened. As a result, even when the thickness of the buffer layer 54 is increased, the driving voltage can be reduced by improving the efficiency of electric field application.

[0043] In the RF modulation section 12, a part 221 of the ground electrode 22B and a part 221 of the signal electrode 22A are arranged in a slit 70B extending obliquely near the side surface 60B of the thin film optical waveguide 60. In the RF modulation section 12, the distance between the ground electrode 22B and the thin film optical waveguide 60 and the distance between the signal electrode 22A and the thin film optical waveguide 60 are made shorter than in Example 1, so that the electric field applied to the thin film optical waveguide 60 is strengthened. As a result, even when the thickness of the buffer layer 54 is increased, the driving voltage can be reduced by improving the efficiency of electric field application.

[0044] In the first DC modulation section 32, the slits 70B extending obliquely from the placement surface 54A toward the side surface 60B of the thin-film optical waveguide 60 are formed in the buffer layer 54. However, for example, a crack that occurs between the thin-film optical waveguide 60 and the buffer layer 54 when the buffer layer 54 is stacked on the thin-film LN substrate 53 may be used as the slits 70B.

[0045] In addition, in the first DC modulation section 32 of Example 2, a rib-type optical waveguide is exemplified as the thin-film optical waveguide 60, but this is not limited to this, and an embodiment thereof will be described below as Example 3. [Example]

[0046] FIG. 5 is a schematic cross-sectional view showing an example of the first DC modulation section 32 of the optical modulator 5 of Example 3. The same components as those of the optical modulator 5 of Example 2 are denoted by the same reference numerals, and redundant descriptions of the components and operations will be omitted. The first DC modulation section 32 shown in FIG. 5 differs from the first DC modulation section 32 shown in FIG. 4 in that a thin-film optical waveguide 61 of a channel waveguide is used instead of the thin-film optical waveguide 60 of a rib-type waveguide. Furthermore, the slit 70B is structured to extend from the arrangement surface 54C of the surface of the buffer layer 54 on which the electrode section 22 is arranged to near the side surface of the thin-film optical waveguide 61. The thin-film optical waveguide 61 has a flat surface 61A and a side surface 61B.

[0047] The electrode portion 22 is disposed on an arrangement surface 54C of the surface of the buffer layer 54 laminated in a portion near the thin film optical waveguide 61, and a portion 221 of the electrode fills the slit 70B from the arrangement surface 54C to apply a drive voltage to the thin film optical waveguide 61. The signal electrode 22A disposed on the arrangement surface 54C of the buffer layer 54 fills the slit 70B with the portion 221 of the electrode into the slit 70B, and the tip of the portion 221 of the electrode approaches the side surface 61B of the thin film optical waveguide 61. The ground electrode 22B disposed on the arrangement surface 54C of the buffer layer 54 fills the slit 70B with the portion 221 of the electrode into the slit 70B, and the tip of the portion 221 of the electrode approaches the side surface 61B of the thin film optical waveguide 61.

[0048] In the first DC modulation section 32 of the third embodiment, a part 221 of the ground electrode 22B and a part 221 of the signal electrode 22A are arranged within the slit 70B. In the first DC modulation section 32, the distance between the ground electrode 22B and the thin film optical waveguide 61 and the distance between the signal electrode 22A and the thin film optical waveguide 61 are shortened, so that the electric field applied to the thin film optical waveguide 61 is strengthened. As a result, even when the thickness of the buffer layer 54 is increased, the efficiency of application of the electric field is improved, thereby enabling a reduction in the driving voltage.

[0049] In the second DC modulation section 33, a part 221 of the ground electrode 22B and a part 221 of the signal electrode 22A are arranged within the slit 70B. In the second DC modulation section 33, the distance between the ground electrode 22B and the thin film optical waveguide 61 and the distance between the signal electrode 22A and the thin film optical waveguide 61 are shortened, so that the electric field applied to the thin film optical waveguide 61 is strengthened. As a result, even if the thickness of the buffer layer 54 is increased, the efficiency of application of the electric field is improved, and the driving voltage can be reduced.

[0050] In the RF modulation section 12, a part 221 of the ground electrode 22B and a part 221 of the signal electrode 22A are arranged within the slit 70B. In the RF modulation section 12, the distance between the ground electrode 22B and the thin film optical waveguide 61 and the distance between the signal electrode 22A and the thin film optical waveguide 61 are shortened, so that the electric field applied to the thin film optical waveguide 61 is strengthened. As a result, even if the thickness of the buffer layer 54 is increased, the efficiency of application of the electric field is improved, and the driving voltage can be reduced.

[0051] Furthermore, the first DC modulation section 32 of Example 2 exemplifies a case in which the slit 70B is formed on the placement surface 54A of the buffer layer 54. When forming the electrode section 22 on the placement surface 54C, it is possible that the electrode section 22 may be misaligned from the placement surface 54C, causing a portion 221 of the electrode to fail to fill the slit 70B. Therefore, in order to address such a situation, an embodiment thereof will be described below as Example 4. [Example]

[0052] Fig. 6 is a schematic cross-sectional view showing an example of the first DC modulation unit 32 of the optical modulator 5 of Example 4. Note that the same components as those of the optical modulator 5 of Example 2 are given the same reference numerals, and explanations of the overlapping components and operations will be omitted. The first DC modulation unit 32 shown in Fig. 6 differs from the first DC modulation unit 32 shown in Fig. 4 in that the entrance of the slit 70B is located within the arrangement surface 54C of the buffer layer 54 on which the electrode unit 22 is located. The entrance position X1 of the slit 70B within the arrangement surface 54C is located inside the end face position X2 of the electrode unit 22.

[0053] Since the entrance of the slit 70B is located within the placement surface 54C of the signal electrode 22A1, when the signal electrode 22A1 is formed within the placement surface 54C, a part 221 of the electrode can be filled within the slit 70B.

[0054] Since the entrance of the slit 70B is located within the placement surface 54C of the ground electrode 22B1, a part 221 of the electrode can be filled in the slit 70B when the ground electrode 22B1 is formed within the placement surface 54C.

[0055] In the first DC modulation section 32 of Example 4, the entrance of the slit 70B is positioned within the placement surface 54C of the electrode section 22, so that even if the electrode section 22 is slightly misaligned from the electrode section 22 when being formed within the placement surface 54C, a portion 221 of the electrode can be filled within the slit 70B.

[0056] In the second DC modulation section 33, the entrance of the slit 70B is positioned within the placement surface 54C of the electrode section 22, so that even if the electrode section 22 is slightly misaligned from the electrode section 22 when formed within the placement surface 54C, a portion 221 of the electrode can be filled within the slit 70B.

[0057] In the RF modulation section 12, the entrance of the slit 70B is positioned within the placement surface 54C of the electrode section 22, so that even if the electrode section 22 is slightly misaligned from the electrode section 22 when being formed within the placement surface 54C, a portion 221 of the electrode can be filled within the slit 70B.

[0058] In the first DC modulation section 32 of Example 1, an example is given in which a slit 70 is arranged on the arrangement surface 54C of the signal electrode 22A and a slit 70 is arranged on the arrangement surface 54C of the ground electrode 22B, but this is not limited to this, and an embodiment thereof will be described below as Example 5. [Example]

[0059] FIG. 7 is a schematic cross-sectional view showing an example of the first DC modulation section 32 of the optical modulator 5 of the fifth embodiment. Note that the same components as those of the optical modulator 5 of the first embodiment are denoted by the same reference numerals, and redundant descriptions of the components and operations will be omitted. The first DC modulation section 32 shown in FIG. 7 differs from the first DC modulation section 32 shown in FIG. 3 in that a slit 70C is formed in the arrangement surface 54C of the signal electrode 22A2, without forming a slit 70 in the arrangement surface 54C of the ground electrode 22B2. A slit 70C extending vertically is formed in the arrangement surface 54C of the signal electrode 22A2, so as to approach the side surface 60B of one thin-film optical waveguide 60. Furthermore, a slit 70C extending vertically is formed in the arrangement surface 54C of the signal electrode 22A2, so as to approach the side surface 60B of the other thin-film optical waveguide 60. A portion 221 of the signal electrode 22A2 on the arrangement surface 54C is filled in the slit 70C.

[0060] The electrode portion 22 absorbs light from the thin-film optical waveguide 60, resulting in increased light loss. This light loss can occur in both the signal electrode 22A2 and the ground electrode 22B2. Therefore, in order to improve the efficiency of applying an electric field to the signal electrode 22A2, a slit 70C is formed only in the placement surface 54C on the signal electrode 22A2 side.

[0061] The first DC modulation section 32 of the fifth embodiment has a slit 70C that extends from the placement surface 54C of the signal electrode 22A2 to the vicinity of the thin-film optical waveguide 60 and is filled with a portion of the electrode. In the first DC modulation section 32, a portion 221 of the signal electrode 22A2 is placed within the slit 70C. In the first DC modulation section 32, the distance between the signal electrode 22A2 and the thin-film optical waveguide 60 is shortened, so that the electric field applied to the thin-film optical waveguide 60 is strengthened. As a result, in the first DC modulation section 32, only the signal electrode 22A2 is placed close to the thin-film optical waveguide 60 via the slit 70C, which reduces optical loss compared to both the signal electrode 22A2 and the ground electrode 22B.

[0062] The second DC modulation section 33 has a slit 70C that extends from the placement surface 54C of the signal electrode 22A2 to near the thin-film optical waveguide 60 and is filled with a portion of the electrode. In the second DC modulation section 33, a portion 221 of the signal electrode 22A2 is placed within the slit 70C. In the second DC modulation section 33, the distance between the signal electrode 22A2 and the thin-film optical waveguide 60 is shortened, so that the electric field applied to the thin-film optical waveguide 60 is strengthened. As a result, in the second DC modulation section 33, only the signal electrode 22A2 is brought close to the thin-film optical waveguide 60 via the slit 70C, and thus optical loss can be suppressed compared to both the signal electrode 22A2 and the ground electrode 22B.

[0063] The RF modulation section 12 has a slit 70C that extends from the placement surface 54C of the signal electrode 22A2 to the vicinity of the thin-film optical waveguide 60 and is filled with a portion of the electrode. In the RF modulation section 12, a portion 221 of the signal electrode 22A2 is placed within the slit 70C. In the RF modulation section 12, the distance between the signal electrode 22A2 and the thin-film optical waveguide 60 is shortened, so that the electric field applied to the thin-film optical waveguide 60 is strengthened. As a result, in the RF modulation section 12, only the signal electrode 22A2 is placed close to the thin-film optical waveguide 60 via the slit 70C, so that optical loss can be suppressed compared to both the signal electrode 22A2 and the ground electrode 22B.

[0064] The first DC modulation section 32 of Example 1 has a slit 70A formed in the arrangement surface 54C of the ground electrode 22B and a slit 70A formed in the arrangement surface 54C of the signal electrode 22A. For example, the distance between a part of the ground electrode 22B and the thin film optical waveguide 60 is the same as the distance between a part of the signal electrode 20A and the thin film optical waveguide 60. However, the present invention is not limited to this, and an embodiment thereof will be described below as Example 6. [Example]

[0065] FIG. 8 is a schematic cross-sectional view showing an example of the first DC modulation section 32 of the optical modulator 5 of Example 6. Note that the same components as those of the optical modulator 5 of Example 1 are denoted by the same reference numerals, and redundant descriptions of the components and operations will be omitted. The first DC modulation section 32 shown in FIG. 8 differs from the first DC modulation section 32 shown in FIG. 3 in that it has a first slit 70D1 extending from the arrangement surface 54C on which the signal electrode 22A2 is arranged to near the thin-film optical waveguide 60, and a second slit 70D2 extending from the arrangement surface 54C on which the ground electrode 22B2 is arranged to near the thin-film optical waveguide 60. Furthermore, the first slit 70D1 is closer to the thin-film optical waveguide 60 than the second slit 70D2.

[0066] The first slit 70D1 fills a part 221 of the signal electrode 22A2 on the placement surface 54C. The second slit 70D2 fills a part 221 of the ground electrode 22B2 on the placement surface 54C.

[0067] In the first DC modulation section 32 of the sixth embodiment, the first slit 70D1 is closer to the thin-film optical waveguide 60 than the second slit 70D2, and a part 221 of the signal electrode 22A2 is disposed within the first slit 70D1. In the first DC modulation section 32, a part of the electrode of the signal electrode 22A2 is closer to the thin-film optical waveguide 60, so that the electric field applied to the thin-film optical waveguide 60 is stronger. Furthermore, in the first DC modulation section 32, a part of the electrode of the ground electrode 22B2 is farther from the thin-film optical waveguide 60 than the signal electrode 22A2, so that light absorption by the ground electrode 22B2 can be suppressed.

[0068] In the second DC modulation section 33, the first slit 70D1 is closer to the thin film optical waveguide 60 than the second slit 70D2, and a part 221 of the signal electrode 22A2 is disposed within the first slit 70D1. In the second DC modulation section 33, a part of the electrode of the signal electrode 22A2 is closer to the thin film optical waveguide 60, so that the electric field applied to the thin film optical waveguide 60 is stronger. Furthermore, in the second DC modulation section 33, a part of the electrode of the ground electrode 22B2 is farther from the thin film optical waveguide 60 than the signal electrode 22A2, so that light absorption by the ground electrode 22B2 can be suppressed.

[0069] In the RF modulation section 12, the first slit 70D1 is closer to the thin film optical waveguide 60 than the second slit 70D2, and a part 221 of the signal electrode 22A2 is disposed within the first slit 70D1. In the RF modulation section 12, a part of the electrode of the signal electrode 22A2 is closer to the thin film optical waveguide 60, so that the electric field applied to the thin film optical waveguide 60 is stronger. Furthermore, in the RF modulation section 12, a part of the electrode of the ground electrode 22B2 is farther from the thin film optical waveguide 60 than the signal electrode 22A2, so that light absorption by the ground electrode 22B2 can be suppressed.

[0070] The following additional notes are provided regarding the above-described embodiments including the present example.

[0071] (Appendix 1) an optical waveguide; a buffer layer laminated on the optical waveguide; an electrode disposed on a surface of the buffer layer laminated in a portion near the optical waveguide, the electrode applying an electric signal to the optical waveguide; a slit formed in the buffer layer, extending from a surface of the buffer layer to a vicinity of the optical waveguide, and filled with a part of the electrode; An optical device comprising: (Appendix 2) The slit is 2. The optical device of claim 1, wherein the electrodes extend vertically from the surface of the buffer layer on which they are disposed. (Appendix 3) The slit is 2. The optical device according to claim 1, wherein the electrodes extend obliquely from the surface of the buffer layer on which the electrodes are arranged toward the side surface of the optical waveguide. (Appendix 4) The optical waveguide is a rib waveguide having a core and a slab; The slit is 4. The optical device according to claim 1, wherein the electrode extends from the surface of the buffer layer on which the electrode is disposed to near the side surface of the core of the rib-type waveguide. (Appendix 5) The optical waveguide is a channel waveguide, The slit is 4. The optical device according to claim 1, wherein the electrode extends from the surface of the buffer layer on which the electrode is disposed to near the side surface of the channel waveguide. (Appendix 6) The slit is 2. The optical device according to claim 1, wherein the buffer layer is formed on a surface on which the electrode is disposed. (Appendix 7) The electrode is a signal electrode disposed on a placement surface of the buffer layer laminated on one side surface of the optical waveguide; a ground electrode disposed on the arrangement surface of the buffer layer laminated on the other side surface of the optical waveguide, The slit is 2. The optical device according to claim 1, wherein the signal electrode is formed in the buffer layer so as to extend from the signal electrode to the vicinity of the optical waveguide, and a portion of the signal electrode is filled. (Appendix 8) The slit is a first slit extending from the arrangement surface on which the signal electrode is arranged to a vicinity of the optical waveguide; a second slit extending from the arrangement surface on which the ground electrode is arranged to a vicinity of the optical waveguide; The first slit is 8. The optical device according to claim 7, characterized in that the second slit is closer to the optical waveguide than the second slit. (Appendix 9) The optical waveguide is 9. The optical device according to any one of claims 1 to 8, which is an optical waveguide made of a thin-film LN (Lithium Niobate) crystal. (Appendix 10) The optical waveguide is 10. The optical device according to claim 9, wherein the optical device is formed on an X-cut substrate of the thin film LN crystal. (Appendix 11) The electrode is 11. The optical device according to any one of claims 1 to 10, which is a DC (Direct Current) electrode. (Appendix 12) The electrode is 11. The optical device according to any one of claims 1 to 10, which is an RF (Radio Frequency) electrode. (Appendix 13) a processor that performs signal processing on the electrical signal; A light source that generates light; an optical device that modulates light generated from the light source using the electrical signal output from the processor; The optical device is an optical waveguide; a buffer layer laminated on the optical waveguide; an electrode disposed on a surface of the buffer layer laminated in a portion near the optical waveguide, the electrode applying an electric signal to the optical waveguide; a slit formed in the buffer layer, extending from a surface of the buffer layer to a vicinity of the optical waveguide, and filled with a part of the electrode; An optical communication device comprising: [Explanation of symbols]

[0072] 1 Optical communication equipment 3 DSP 4 light source 5 Optical Modulator 12 RF modulation section 22 Electrode section 22A signal electrode 22B Ground electrode 32 First DC modulation section 33 Second DC modulation section 53 Thin-film LN substrate 54 Buffer layer 54C Placement surface 60 Thin-film optical waveguide (rib-type waveguide) 61 Thin-film optical waveguide (channel waveguide) 70 slit

Claims

1. an optical waveguide; a buffer layer laminated on the optical waveguide; an electrode disposed on a placement surface of the buffer layer laminated on a side surface of the optical waveguide, the electrode applying an electric signal to the optical waveguide; a slit formed in the buffer layer, extending obliquely from a surface of the buffer layer to a vicinity of a side surface of the optical waveguide toward the side surface of the optical waveguide, and filled with a part of the electrode; and The slit is An optical device characterized in that the buffer layer is structured to extend from the arrangement surface to near the side portion of the optical waveguide so that the distance between the tip of a portion of the electrode within the slit and the optical waveguide is closer than the distance between the electrode on the arrangement surface and the optical waveguide.

2. The optical waveguide is a rib waveguide having a core and a slab; The slit is 2. The optical device according to claim 1, wherein the electrodes extend from the arrangement surface to the vicinity of a side surface of the core of the rib-type waveguide.

3. The optical waveguide is a channel waveguide, The slit is 2. The optical device according to claim 1, wherein the electrodes extend from the arrangement surface to the vicinity of a side surface of the channel waveguide.

4. The entrance of the slit is 2. The optical device according to claim 1, wherein the buffer layer is formed in the arrangement surface on which the electrode is arranged.

5. The electrode is a signal electrode disposed on the arrangement surface laminated on one side surface of the optical waveguide; a ground electrode disposed on the arrangement surface that is laminated on the other side surface of the optical waveguide; The slit is 2. The optical device according to claim 1, wherein the signal electrode is formed in the placement surface so as to extend from the signal electrode to the vicinity of a side portion of the optical waveguide, and a part of the signal electrode is filled.

6. The slit is a first slit extending from the arrangement surface on which the signal electrode is arranged to a vicinity of a side surface of the optical waveguide; a second slit extending from the arrangement surface on which the ground electrode is arranged to a vicinity of a side surface of the optical waveguide; The first slit is 6. The optical device according to claim 5, wherein the second slit is closer to a side surface of the optical waveguide than the second slit.

7. a processor that performs signal processing on the electrical signal; A light source that generates light; an optical device that modulates light generated from the light source using the electrical signal output from the processor; The optical device is an optical waveguide; a buffer layer laminated on the optical waveguide; an electrode disposed on a placement surface of the buffer layer laminated on a side surface of the optical waveguide, the electrode applying an electric signal to the optical waveguide; a slit formed in the buffer layer, extending obliquely from a surface of the buffer layer to a vicinity of a side surface of the optical waveguide toward the side surface of the optical waveguide, and filled with a part of the electrode; and The slit is An optical communication device characterized in that the buffer layer is structured to extend from the arrangement surface to near the side portion of the optical waveguide so that the distance between the tip of a portion of the electrode within the slit and the optical waveguide is closer than the distance between the electrode on the arrangement surface and the optical waveguide.

8. an optical waveguide; a buffer layer laminated on the optical waveguide; an electrode disposed on a placement surface of the buffer layer laminated on a side surface of the optical waveguide, the electrode applying an electric signal to the optical waveguide; a slit formed in the buffer layer, extending obliquely from a surface of the buffer layer to a depth where a side surface of the optical waveguide is formed toward a side surface of the optical waveguide, and filled with a part of the electrode; and The slit is An optical device characterized in that the buffer layer is structured to extend from the arrangement surface to near the side portion of the optical waveguide so that the distance between the tip of a portion of the electrode within the slit and the optical waveguide is closer than the distance between the electrode on the arrangement surface and the optical waveguide.

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