Method for transferring large amounts of electronic devices with adjustable pitch

Abstract

To provide a method of transferring a large number of electronic devices with adjustable pitches.SOLUTION: A transfer method includes the following steps: providing a first substrate that includes a first electronic device matrix composed of (M rows of electronic devices )×(N columns of electronic devices), where M and N are natural numbers greater than 1, and where a row pitch and a column pitch of the first electronic device matrix are X1 and Y1, respectively, with X1>0 and Y1>0; providing a second substrate and positioning the second substrate below the first substrate; and transferring all or some of the electronic devices located on the first substrate to the second substrate, thereby forming a second electronic device matrix on a second upper surface of the second substrate, where a row pitch and a column pitch of the second electronic device matrix are X2 and Y2, respectively, with X2>0, Y2>0, X1≠X2, and Y1≠Y2.SELECTED DRAWING: Figure 2D

Description

[Technical Field]

[0001] The present invention relates to a method for transferring a large number of electronic devices, and more particularly to a method for transferring a large number of electronic devices with adjustable pitch. [Background technology]

[0002] Light-emitting diodes (LEDs) have advantages such as active light emission, high brightness, and energy saving, making them widely used in lighting, displays, projectors, and other technical fields. Micro LED displays are gradually becoming a new generation of display technology. A full-high-density (FHD) display has approximately 2 million pixels arranged in 1920 rows and 1080 columns. Each pixel is further divided into three subpixels: red, green, and blue. Therefore, a full-high-density (FHD) LED display contains approximately 6 million LED dies. To cut and attach these 6 million dies to the display panel substrate, a key technology is the method for accurately transferring and fixing a large number of micro LEDs to the display panel substrate.

[0003] 1A-1D are top views showing a known method for transferring a large number of electronic devices. The method includes the following steps: First, a temporary substrate 10, as shown in FIG. 1A, is provided. The temporary substrate has a first upper surface 10A and a first lower surface 10B facing each other. A plurality of electronic devices 12 are formed on the first upper surface 10A. These electronic devices 12 are arranged at intervals to form an electronic device matrix (not shown). The row pitch and column pitch of the electronic device matrix are X1 and Y1, respectively, where X1 and Y1 are greater than 0. Here, the temporary substrate 10 is a pyrolytic rubber film or a photolytic rubber film. Next, a target substrate 20, as shown in FIG. 1B, is provided. The target substrate 20 has a second upper surface 20A and a second lower surface 20B facing each other. The temporary substrate 10 is placed above the target substrate 20 such that the first upper surface 10A of the temporary substrate 10 faces the second upper surface 20A of the target substrate 20. Then, light having a first wavelength (not shown) is supplied above the temporary substrate 10, and the temporary substrate 20 is irradiated with the light having the first wavelength to thermally or photolyze it, causing it to lose its viscosity. As shown in FIG. 1C, all of the electronic devices 12 are peeled off and bonded to the second upper surface 20A of the target substrate 20. Although this known method for transferring a large number of electronic devices allows for rapid mass transfer of multiple electronic devices 12 from the first upper surface 10A of the temporary substrate to the second upper surface 20A of the target substrate 20, as shown in FIG. 1D, the row pitch and column pitch of the electronic devices 12 positioned on the second upper surface 20A (not shown) remain the same as X1 and Y1, and the pitch between the electronic devices cannot be adjusted as needed, significantly limiting its application.

[0004] In view of the above, a pitch-adjustable mass electronic device transfer method is eagerly anticipated in the industry. Summary of the Invention

[0005] The present invention discloses a method for transferring a large number of electronic devices with adjustable pitch, which includes the following steps: providing a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix with M rows of electronic devices and N columns of electronic devices, where the first axis direction is substantially perpendicular to the second axis direction, M and N are natural numbers greater than 1, and the row pitch and column pitch of the first electronic device matrix are the row pitch and column pitch of the second electronic device matrix are X1 and Y1, respectively, where X1 and Y1>0; providing a second substrate having opposing second upper and lower surfaces, the second substrate being disposed below the first substrate, with the first upper surface of the first substrate facing the second upper surface of the second substrate; transferring all or some of the electronic devices located on the first substrate to the second substrate to form a second electronic device matrix on the second upper surface of the second substrate, the row pitch and column pitch of the second electronic device matrix being X2 and Y2, respectively, where X2 and Y2>0, and X1≠X2 and Y1≠Y2.

[0006] In the pitch-adjustable mass electronic device transfer method, the step of forming the second electronic device matrix includes: providing a first light having a first wavelength above the first substrate; irradiating the first substrate on which the electronic devices in the Jth row and the Kth column of the first electronic device matrix are located with the first light to thermally or photolytically decompose the electronic devices to lose viscosity, selectively peeling the electronic devices in the Jth row and the Kth column and bonding them to the second upper surface of the second substrate, and bonding the first substrate to the second substrate. a first light having a first wavelength is irradiated onto the first substrate on which the electronic devices in the (J+1)th row and the Kth column of the first electronic device matrix are located, displacing the electronic devices by a distance of (X2-X1) along a first axis direction, to thermally or photolytically decompose or photodecompose the electronic devices to remove their adhesion, and selectively peel off the electronic devices in the (J+1)th row and the Kth column and bond them to the second upper surface of the second substrate, where J, K, and X2 are all natural numbers, and 1≦J≦(M-1), 1≦K≦(N-1); After all or part of the electronic device in the first substrate is selectively peeled off and bonded to the second upper surface of the second substrate, the first substrate is first realigned with the second substrate, and then the first substrate is displaced relative to the second substrate along the second axis direction by a distance of (Y2-Y1). A first light having a first wavelength is irradiated onto the first substrate on which the electronic device in the Jth row, (K+1)th column of the first electronic device matrix is ​​located, causing thermal or photodecomposition to cause the electronic device to lose viscosity, thereby selecting the electronic device in the Jth row, (K+1)th column. selectively peeling the electronic device at the (J+1)th row and the (K+1)th column of the first electronic device matrix from the first substrate, bonding the electronic device to the second upper surface of the second substrate, displacing the first substrate relative to the second substrate by a distance of (X2-X1) along the first axis direction, and irradiating the first substrate, on which the electronic device at the (J+1)th row and the (K+1)th column of the first electronic device matrix is ​​located, with a first light having a first wavelength to thermally or photolytically decompose the electronic device and lose viscosity, thereby selectively peeling the electronic device at the (J+1)th row and the (K+1)th column from the first substrate, bonding the electronic device to the second upper surface of the second substrate, where Y2 is a natural number;Here, all or some of the electronic devices located on the first substrate may be selectively peeled off and bonded to the second upper surface of the second substrate, and then the second electronic device matrix may be formed on the second upper surface of the second substrate;

[0007] In the above-mentioned pitch-adjustable mass electronic device transfer method, the step of forming the second electronic device matrix includes: providing a first light having a first wavelength above the first substrate; irradiating the first substrate on which the electronic devices in the Jth row and the Kth column of the first electronic device matrix are located with the first light having the first wavelength to cause thermal or photolysis to cause the electronic devices to lose viscosity, selectively dissociate the electronic devices in the Jth row and the Kth column, and bond them to the second upper surface of the second substrate, thereby attaching the first substrate to the second substrate. and displacing the first substrate at a distance of (Y2-Y1) along the second axis, irradiating the first substrate on which the electronic devices in the Jth row and the (K+1)th column of the first electronic device matrix are located with a first light having a first wavelength to thermally or photolytically decompose the electronic devices to remove their adhesion, selectively separating the electronic devices in the Jth row and the (K+1)th column and bonding them to a second upper surface of the second substrate, where J, K, and Y2 are all natural numbers, and 1≦J≦(M-1), 1≦K≦(N-1); After all or some of the electronic devices in the Jth row of the first electronic device matrix are selectively peeled off and bonded to the second upper surface of the second substrate, the first substrate is first realigned with the second substrate, and then the first substrate is displaced relative to the second substrate by a distance of (X2-X1) along the first axis direction. A first light having a first wavelength is irradiated onto the first substrate on which the electronic devices in the (J+1)th row and the Kth column of the first electronic device matrix are located, causing thermal or photodecomposition to cause the electronic devices to lose viscosity, and the electronic devices in the (J+1)th row and the Kth column of the first electronic device matrix are then bonded to the second upper surface of the second substrate. selectively peeling off the electronic device at the (J+1)th row and the (K+1)th column of the first electronic device matrix and bonding it to the second upper surface of the second substrate, displacing the first substrate relative to the second substrate by a distance (Y2-Y1) along a second axis direction, and irradiating the first substrate on which the electronic device at the (J+1)th row and the (K+1)th column of the first electronic device matrix is ​​located with a first light of a first wavelength to thermally or photolytically decompose the electronic device and cause it to lose viscosity, thereby selectively peeling off the electronic device at the (J+1)th row and the (K+1)th column and bonding it to the second upper surface of the second substrate, where X2 is a natural number;Here, all or some of the electronic devices on the first substrate may be selectively peeled off and bonded to the second upper surface of the second substrate, and then the second electronic device matrix may be formed on the second upper surface of the second substrate.

[0008] In the above pitch-adjustable mass transfer method for electronic devices, the first substrate is a pyrolytic rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12000 nm.

[0009] In the above pitch-adjustable mass transfer method for electronic devices, the first substrate is a photodegradable rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12000 nm.

[0010] In the above pitch-adjustable mass electronic device transfer method, the electronic devices are selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements; the light emitted by the light-emitting diodes is red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diode is 390 nm to 1700 nm; and the semiconductor elements are selected from one or more groups consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

[0011] The present invention discloses another pitch-adjustable mass transfer method for electronic devices, which includes the following steps: providing a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices, the electronic devices respectively arranged along a first axis direction and a second axis direction to form a first electronic device matrix with M rows of electronic devices and N columns of electronic devices, the first axis direction being substantially perpendicular to the second axis direction, M and N being natural numbers greater than 1, and the row pitch and column pitch of the first electronic device matrix are: a second substrate having opposing second upper and lower surfaces, the second substrate being disposed below the first substrate, with the first upper surface of the first substrate facing the second upper surface of the second substrate; transferring all or some of the electronic devices located on the first substrate to the second substrate to form a second electronic device matrix on the second substrate, the row pitch and column pitch of the second electronic device matrix being X1, Y2 or X2, Y1, the second electronic device matrix being X2, Y2, the row pitch and column pitch being X2, Y2, the column pitch and column pitch being X1, Y2, the column pitch and column pitch being X2, Y1, the column pitch and column pitch being X1, Y2, the column pitch and column pitch being X1, Y2, the column pitch and column pitch being Y1 ... Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being X1, Y2, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1, the column pitch and column pitch being Y1

[0012] In the above-mentioned method for transferring a large number of electronic devices with adjustable pitch, the row pitch and column pitch of the second electronic device matrix are X1 and Y2, respectively, and the step of forming the second electronic device matrix includes: providing a first light having a first wavelength above the first substrate, irradiating the first substrate on which the electronic devices in the Kth column of the first electronic device matrix are located with the first light having the first wavelength to cause thermal or photodecomposition to lose viscosity, and peeling off all of the electronic devices in the Kth column and bonding them to the second upper surface of the second substrate; and aligning the first substrate in a second axial direction with the second substrate. and irradiating a first light having a first wavelength onto the first substrate on which the electronic devices in the (K+1)th row of the first electronic device matrix are located by a distance (Y2-Y1) along the axis of the first substrate, to cause thermal or photodecomposition to cause the electronic devices to lose viscosity and to peel off all or part of the electronic devices in the (K+1)th row and bond them to the second upper surface of the second substrate, where K is a natural number and 1≦K≦(N-1); after all or part of the electronic devices on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate, the second electronic device matrix can be formed on the second substrate.

[0013] The above-mentioned another pitch-adjustable mass electronic device transfer method further includes the following steps: providing a third substrate having opposing third upper and lower surfaces, and disposing the third substrate below the second substrate, with the second upper surface of the second substrate facing the third upper surface of the third substrate; transferring all or some of the electronic devices located on the second substrate to the third substrate to form a third electronic device matrix on the third substrate, wherein the row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively.

[0014] In the above-mentioned method for transferring a large number of electronic devices with adjustable pitch, the step of forming the third electronic device matrix includes the following steps: providing a second light having a second wavelength above the second substrate, and irradiating the second substrate on which the electronic devices in the Jth row of the second electronic device matrix are located with the second light having the second wavelength, so as to thermally or photolytically decompose the second substrate to lose viscosity, and to peel off all or part of the electronic devices in the Jth row and bond them to a third upper surface of the third substrate; and separating the second substrate from the third substrate at a distance of (X2-X1) along the first axis direction. and irradiating the second substrate on which the electronic devices in the (J+1)th row of the second electronic device matrix are located with a second light of a second wavelength to thermally or photolytically decompose the second substrate to lose its viscosity, thereby peeling off all or some of the electronic devices in the (J+1)th row and bonding them to a third upper surface of the third substrate, where J is a natural number and 1≦J≦(M−1); after all or some of the electronic devices on the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate, a third electronic device matrix can be formed on the third substrate.

[0015] In the above-mentioned method for transferring a large number of electronic devices with adjustable pitch, the row pitch and column pitch of the second electronic device matrix are X2 and Y1, respectively, and the step of forming the second electronic device matrix includes: providing a first light having a first wavelength above the first substrate, irradiating the first substrate on which the electronic devices in the Jth row of the first electronic device matrix are located with the first light having the first wavelength to cause thermal or photodecomposition to lose viscosity, and peeling off all or part of the electronic devices in the Jth row and bonding them to a second upper surface of the second substrate; rotating the first substrate along a first axis direction relative to the second substrate; and displacing the first light having a first wavelength by a distance of (X2-X1) to the first substrate on which the electronic devices in the (J+1)th row of the first electronic device matrix are located, to cause thermal or photodecomposition to cause the electronic devices to lose viscosity, and to peel off all or part of the electronic devices in the (J+1)th row and bond them to the second top surface 200A of the second substrate 200, where J is a natural number and 1≦J≦(M-1); after all or part of the electronic devices of the first substrate are selectively peeled off and bonded to the second top surface 200A of the second substrate 200, the second electronic device matrix can be formed on the second substrate.

[0016] The above-mentioned another pitch-adjustable mass electronic device transfer method further includes the following steps: providing a third substrate having opposing third upper and lower surfaces, and disposing the third substrate below the second substrate, with the second upper surface of the second substrate facing the third upper surface of the third substrate; transferring all or some of the electronic devices located on the second substrate to the third substrate to form a third electronic device matrix on the third substrate, wherein the row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively.

[0017] In the above-mentioned method for transferring a large number of electronic devices with adjustable pitch, the step of forming the third electronic device matrix includes the following steps: providing a second light having a second wavelength above the second substrate, and irradiating the second substrate on which the electronic devices in the Kth column of the second electronic device matrix are located with the second light having the second wavelength to thermally or photolytically decompose the second substrate to lose viscosity, so that all or part of the electronic devices in the Jth row are peeled off and bonded to the third upper surface of the third substrate; and rotating the second substrate relative to the third substrate along a second axis direction (Y2-Y1). and irradiating the second substrate on which the electronic devices in the (K+1)th row of the second electronic device matrix are located with second light of a second wavelength to thermally or photolytically decompose the second substrate to lose viscosity, thereby peeling off all or some of the electronic devices in the (K+1)th row and bonding them to a third upper surface of the third substrate, where K is a natural number and 1≦K≦(N−1); after all or some of the electronic devices on the second substrate are selectively peeled off and bonded to the third upper surface of the third substrate, a third electronic device matrix can be formed on the third substrate.

[0018] In the above-mentioned another pitch-adjustable mass transfer method for electronic devices, the first substrate is a pyrolytic rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12000 nm.

[0019] In the above-mentioned method for transferring a large number of electronic devices with adjustable pitch, the first substrate is a photodegradable rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12000 nm.

[0020] In the above-mentioned method for transferring a large number of electronic devices with adjustable pitch, the second substrate is a pyrolytic rubber film, and the second light having a second wavelength is light having a wavelength of 100 nm to 12000 nm.

[0021] In the above-mentioned method for transferring a large number of electronic devices with adjustable pitch, the second substrate is a photodegradable rubber film, and the second light having a second wavelength is light having a wavelength of 100 nm to 12000 nm.

[0022] In the above-mentioned method for transferring a large number of pitch-adjustable electronic devices, the electronic devices are selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements; the light emitted by the light-emitting diodes is red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light; the wavelength of the laser diode is 390 nm to 1700 nm; and the semiconductor elements are selected from one or more groups consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

[0023] The present invention further discloses a pitch-adjustable mass transfer method for electronic devices, which includes the following steps: providing a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices (1211-12NM), the electronic devices being arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix with M rows of electronic devices and N columns of electronic devices, where the first axis direction is substantially perpendicular to the second axis direction, M and N are natural numbers greater than 1, and the first electronic devices are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix with M rows of electronic devices and N columns of electronic devices, where ... The row pitch and column pitch of the bi-matrix are X1 and Y1, respectively, where X1 and Y1>0; providing a second substrate having opposing second upper and lower surfaces, the second substrate being disposed below the first substrate, with the first upper surface of the first substrate facing the second upper surface of the second substrate; transferring the electronic devices located on the first substrate to the second substrate to form a second electronic device matrix having P rows of electronic devices and Q columns of electronic devices on the second upper surface of the second substrate, where P and Q are natural numbers greater than 1, and P≠M and / or Q≠N.

[0024] In the above further pitch-adjustable mass electronic device transfer method, the column pitch of the second electronic device matrix is ​​Y2, Y2>0 and Y1≠Y2.

[0025] In the above-mentioned further pitch-adjustable mass electronic device transfer method, the step of forming the second electronic device matrix includes: setting the electronic devices in the R1 row located on the first substrate as a first baseline along a first axis of the first substrate, setting the electronic devices in the R2 row located on the second substrate as a second baseline along the first axis of the second substrate, and aligning the first baseline with the second baseline; providing a first light having a first wavelength above the first substrate, and applying the first light having the first wavelength to the first substrate where the electronic devices in the N1 row of the first electronic device matrix are located. The substrate is irradiated with light or heat to decompose or photodecompose it, thereby losing its viscosity, and the electronic devices in the N1 column located on the first substrate are selectively peeled off and bonded to the second upper surface of the second substrate and positioned in the N2 column of the second electronic device matrix, where R1, R2, N1, and N2 are natural numbers, N1≦N, N2≦Q, and 1≦R1≦N1, 1≦R2≦N2; after the electronic devices in the N1 column of the first electronic device matrix located on the first substrate are transferred to the N2 column of the second electronic device matrix on the second substrate, the relative movement distance along the second axis is [(N2−R2)*Y2−(N1−R1)*Y1].

[0026] The above-mentioned further pitch-adjustable mass electronic device transfer method further includes the following steps: providing a third substrate having opposing third upper and lower surfaces, and disposing the third substrate below the second substrate, with the second upper surface of the second substrate facing the third upper surface of the third substrate; transferring the second electronic device matrix located on the second substrate to the third substrate to form a third electronic device matrix on the third substrate with U rows of electronic devices and V columns of electronic devices, wherein the row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively, where U and V are natural numbers greater than 1.

[0027] In the above-mentioned further pitch-adjustable mass electronic device transfer method, the step of forming the third electronic device matrix includes: setting the electronic devices in the S1 row located on the second substrate to a third baseline along the second axis direction of the second substrate, setting the electronic devices in the S2 row located on the third substrate to a fourth baseline along the second axis direction of the third substrate, and aligning the third baseline with the fourth baseline; providing a second light having a second wavelength above the second substrate, and illuminating the second light having the second wavelength onto the second substrate on which the electronic devices in the M1 row of the second electronic device matrix are located. and irradiating the electronic device with radiation, causing thermal or photodecomposition to cause it to lose viscosity, thereby selectively peeling off the electronic devices in row M1 located on the second substrate and bonding them to the third upper surface of the third substrate, and positioning them in column M2 of the third electronic device matrix, where S1, S2, M1, and M2 are natural numbers, M1≦M, M2≦U, and 1≦S1≦M1, 1≦S2≦M2; after the electronic devices in row M1 of the second electronic device matrix located on the second substrate are transferred to row M2 of the third electronic device matrix on the third substrate, the relative movement distance along the first axis is [(M2−S2)*X2−(M1−S1)*X1].

[0028] In the above further pitch-adjustable mass electronic device transfer method, the row pitch of the second electronic device matrix is ​​X2, where X2>0 and X1≠X2.

[0029] In the above-mentioned further pitch-adjustable mass electronic device transfer method, the step of forming the second electronic device matrix includes: setting the electronic devices in row S1 located on the first substrate as a first baseline along the second axis direction of the first substrate, setting the electronic devices in row S2 located on the second substrate as a second baseline along the second axis direction of the second substrate, and aligning the first baseline with the second baseline; providing first light having a first wavelength above the first substrate, and irradiating the first light having the first wavelength onto the first substrate on which the electronic devices in row M1 of the first electronic device matrix are located. and thermally or photolytically decomposing the electronic devices to remove viscosity, thereby selectively peeling off the electronic devices in the M1 row located on the first substrate and bonding them to the second upper surface of the second substrate to position them in the M2 column of the second electronic device matrix, where S1, S2, M1, M2, and M2 are natural numbers, M1≦M, M2≦P, and 1≦S21≦M1, 1≦S2≦M2; after the electronic devices in the M1 row of the first electronic device matrix located on the first substrate are transferred to the M2 row of the second electronic device matrix on the second substrate, the relative movement distance along the first axis is [(M2−S2)*X2−(M1−S1)*X1].

[0030] The above-mentioned further pitch-adjustable mass electronic device transfer method further includes the following steps: providing a third substrate having opposing third upper and lower surfaces, and disposing the third substrate below the second substrate, with the second upper surface of the second substrate facing the third upper surface of the third substrate; transferring the second electronic device matrix located on the second substrate to the third substrate to form a third electronic device matrix on the third substrate with U rows of electronic devices and V columns of electronic devices, where the row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively, where U and V are natural numbers greater than 1.

[0031] In the above-mentioned further pitch-adjustable mass electronic device transfer method, the step of forming the third electronic device matrix includes: setting the electronic devices in the R1 column located on the second substrate to a third baseline along the first axis of the second substrate, setting the electronic devices in the R2 column located on the third substrate to a fourth baseline along the first axis of the third substrate, and aligning the third baseline with the fourth baseline; providing a second light having a second wavelength above the second substrate, and illuminating the second light having the second wavelength onto the second substrate on which the electronic devices in the N1 column of the second electronic device matrix are located. and irradiating the electronic devices with radiation, causing them to thermally or photolytically decompose and lose their viscosity, thereby selectively peeling off the electronic devices in the N1 row located on the second substrate and bonding them to the third upper surface of the third substrate to position them in the N2 row of the third electronic device matrix, where R1, R2, N1, and N2 are natural numbers, N1≦N, N2≦V, and 1≦R1≦N1, 1≦R2≦N2; after the electronic devices in the N1 row of the second electronic device matrix located on the second substrate are transferred to the N2 row of the third electronic device matrix on the third substrate, the relative movement distance along the second axis is [(N2−R2)*Y2−(N1−R1)*Y1].

[0032] In the above-mentioned further pitch-adjustable mass transfer method for electronic devices, the first substrate is a pyrolytic rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12000 nm.

[0033] In the above-mentioned further pitch-adjustable mass transfer method for electronic devices, the first substrate is a photodegradable rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12000 nm.

[0034] In the above-mentioned further pitch-adjustable mass transfer method for electronic devices, the second substrate is a pyrolytic rubber film, and the second light having a second wavelength is light having a wavelength of 100 nm to 12000 nm.

[0035] In the above-mentioned further pitch-adjustable mass transfer method for electronic devices, the second substrate 200 is a photodegradable rubber film, and the second light having the second wavelength is light having a wavelength of 100 nm to 12000 nm.

[0036] In the above further pitch-adjustable mass transfer method for electronic devices, the electronic devices are selected from one or more of the group consisting of light-emitting diodes, laser diodes, and semiconductor elements.

[0037] In the above further pitch-adjustable mass electronic device transfer method, the light emitted by the light-emitting diode is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light.

[0038] In the above-mentioned further pitch-adjustable mass electronic device transfer method, the wavelength of the laser diode is 390 nm to 1700 nm.

[0039] In the above further pitch adjustable mass electronic device transfer method, the semiconductor elements are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs and analog ICs. [Brief explanation of the drawings]

[0040] [Figure 1A] 1 is a top view illustrating a known method for transferring a large number of electronic devices. [Figure 1B] 1 is a top view illustrating a known method for transferring a large number of electronic devices. [Figure 1C] 1 is a top view illustrating a known method for transferring a large number of electronic devices. [Figure 1D] 1 is a top view illustrating a known method for transferring a large number of electronic devices.

[0041] [Figure 2A] 1 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a first embodiment of the present invention; FIG. [Figure 2B]1 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a first embodiment of the present invention; FIG. [Figure 2C] 1 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a first embodiment of the present invention; FIG. [Figure 2D] 1 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a first embodiment of the present invention; FIG. [Figure 2E] 1 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a first embodiment of the present invention; FIG. [Figure 2F] 1 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a first embodiment of the present invention; FIG. [Figure 2G] 1 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a first embodiment of the present invention; FIG. [Figure 2H] 1 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a first embodiment of the present invention; FIG.

[0042] [Figure 2A-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a second embodiment of the present invention; [Figure 2B-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a second embodiment of the present invention; [Figure 2C-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a second embodiment of the present invention; [Figure 2D-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a second embodiment of the present invention; [Figure 2E-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a second embodiment of the present invention;

[0043] [Figure 3A]FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention. [Figure 3B] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention. [Figure 3C] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention. [Figure 3D] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention. [Figure 3E] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention. [Figure 3F] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention. [Figure 3G] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention. [Figure 3H] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention. [Figure 3I] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a third embodiment of the present invention.

[0044] [Figure 3A-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a fourth embodiment of the present invention. [Figure 3B-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a fourth embodiment of the present invention. [Figure 3C-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a fourth embodiment of the present invention. [Figure 3D-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a fourth embodiment of the present invention. [Figure 3E-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a fourth embodiment of the present invention. [Figure 3F-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a fourth embodiment of the present invention. [Figure 3G-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a fourth embodiment of the present invention. [Figure 3H-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a fourth embodiment of the present invention.

[0045] [Figure 4A] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices illustrated in accordance with a fifth embodiment of the present invention. [Figure 4B] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices illustrated in accordance with a fifth embodiment of the present invention. [Figure 4C] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices illustrated in accordance with a fifth embodiment of the present invention. [Figure 4D] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices illustrated in accordance with a fifth embodiment of the present invention. [Figure 4E] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices illustrated in accordance with a fifth embodiment of the present invention.

[0046] [Figure 4A-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a sixth embodiment of the present invention. [Figure 4B-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a sixth embodiment of the present invention. [Figure 4C-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a sixth embodiment of the present invention. [Figure 4D-1]FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a sixth embodiment of the present invention. [Figure 4E-1] FIG. 10 is a top view of a method for transferring a large number of pitch-adjustable electronic devices according to a sixth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0047] In order to provide a more detailed and complete description of the disclosure of the present invention, the following provides illustrative descriptions of embodiments and specific examples of the present invention. However, these are not the only ways to implement or operate the specific examples of the present invention. The examples disclosed below may be combined with or substituted for each other when beneficial, or may be added to one example with another example without the need for further description or explanation.

[0048] In the following description, numerous specific details are set forth in order to provide the reader with a thorough understanding of the following embodiments. However, embodiments of the present invention may be practiced without these specific details. In other instances, well-known structures and devices are shown in the drawings only diagrammatically to simplify the drawings.

[0049] Example

[0050] Example 1

[0051] Hereinafter, the pitch-adjustable method for transferring a large number of electronic devices according to the first embodiment will be described in detail with reference to the top views of FIGS. 2A to 2H.

[0052] First, refer to FIG. 2A. As shown in FIG. 2A, a first substrate 100 is provided. The first substrate 100 has a first upper surface 100A and a first lower surface 100B facing each other. Here, the first upper surface 100A of the first substrate 100 has a plurality of electronic devices 1211-12NM. These electronic devices 1211-12NM are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix (not shown) with M rows of electronic devices and N columns of electronic devices. Here, the first substrate 100 is a pyrolytic rubber film or a photolytic rubber film, the first axis direction and the second axis direction are substantially perpendicular to each other, and M and N are natural numbers greater than 1. The row pitch and column pitch of the first electronic device matrix are X1 and Y1, respectively, where X1 and Y1 are greater than 0. In this embodiment, the first axis direction is described as the X-axis direction and the second axis direction is described as the Y-axis direction, but in other embodiments of the present invention, the first axis direction may be the Y-axis direction and the second axis direction may be the X-axis direction, as necessary.

[0053] The electronic devices 1211 to 12NM in this Example 1 are selected from one or more groups consisting of, for example, a light-emitting diode, a laser diode, and a semiconductor element, but are not limited thereto. Here, the light emitted by the light-emitting diode is, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode is, for example, 390 nm to 1700 nm, but is not limited thereto. The semiconductor element is, for example, selected from one or more groups consisting of, for example, a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC, but is not limited thereto.

[0054] 2B, a second substrate 200 is provided and disposed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B that face each other. The first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200.

[0055] 2B to 2D, first light having a first wavelength is provided above the first substrate 100. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The first light having the first wavelength is then irradiated onto the first substrate 100 on which the electronic device 12KJ in the Jth row and Kth column of the first electronic device matrix is ​​located, causing thermal or photolysis to remove viscosity. The electronic device 12KJ in the Jth row and Kth column is then selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Thereafter, the first substrate 100 is displaced by a distance (X2-X1) along the first axis direction relative to the second substrate 200. The first light having the first wavelength is then irradiated onto the first substrate 100 on which the electronic device 12(K+1)J in the (J+1)th row and Kth column of the first electronic device matrix is ​​located, causing thermal or photolysis to remove viscosity. The electronic devices in the (J+1)th row and the Kth column are selectively peeled off and bonded to the second top surface 200A of the second substrate 200. Here, J, K, and X2 are all natural numbers, X1≠X2, and 1≦J≦(M−1), 1≦K≦(N−1). Although the first embodiment has been described as an example in which all of the electronic devices 12K1 to 12KM in the Kth column are selectively peeled off and bonded to the second top surface 200A of the second substrate 200, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 12K1 to 12KM in the Kth column and bond them to the second top surface 200A of the second substrate 200, as necessary.

[0056] 2B , when J=1 and K=1, first light having a first wavelength is irradiated along a first axis direction (X-axis direction) onto the first substrate 100 on which the electronic devices 1211 in the first row and first column of the first electronic device matrix are located, causing thermal or photolysis to cause the electronic devices 1211 to lose their viscosity, and selectively peel off the electronic devices 1211 in the first row and first column and bond them to the second upper surface 200A of the second substrate 200.

[0057] 2C and 2D, the first substrate 100 is displaced relative to the second substrate 200 by a distance (X2-X1) along the first axis (X-axis), and a first light having a first wavelength is irradiated along the first axis (X-axis) onto the first substrate 100 where the electronic devices in the second row and first column of the first electronic device matrix are located, causing thermal or photolysis and loss of viscosity. The electronic device 1212 in the second row and first column is selectively peeled off and bonded to the second top surface 200A of the second substrate 200. Similarly, the other electronic devices 1213-121M in the first column may also be selectively peeled off and bonded to the second top surface 200A of the second substrate 200 by the same method as described above.

[0058] 2E to 2G. After the electronic devices 12K1 to 12KM in the Kth column of the first electronic device matrix are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, the first substrate 100 is first realigned with the second substrate 200, and then the first substrate 100 is again displaced relative to the second substrate 200 along the second axis direction (Y-axis direction) by a distance of (Y2-Y1). Y2>0, Y1≠Y2. Then, first light having a first wavelength is irradiated onto the first substrate 100 on which the electronic device 12(K+1)J in the Jth row and (K+1)th column of the first electronic device matrix is ​​located, causing thermal or photolysis and loss of viscosity. The first light having a first wavelength is, for example, light having a wavelength of 100 nm to 12,000 nm, but is not limited thereto. Then, the electronic device 12(K+1)K in the Jth row and the (K+1)th column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. The first substrate 100 is displaced relative to the second substrate 200 along the first axis direction (X-axis direction) by a distance of (X2-X1). First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic device 12(K+1)(J+1) in the (J+1)th row and the (K+1)th column of the first electronic device matrix is ​​located, causing thermal or photolysis and losing viscosity. The electronic device 12(K+1)(J+1) in the (J+1)th row and the (K+1)th column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. Here, Y2 is a natural number. After the electronic devices 1211-121M located on the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, a second electronic device matrix (not shown) can be formed on the second upper surface 200A of the second substrate 200. In the first embodiment, all of the electronic devices 1211-121M in the first electronic device matrix (not shown) located on the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. However, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 1211-121M in the first electronic device matrix (not shown) located on the first substrate 100 and bond them to the second upper surface 200A of the second substrate 200, as necessary.

[0059] As shown in FIG. 2E, when K=1, the electronic devices 1213-121M in the first column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. The first substrate 100 is then realigned with the second substrate 200. The first substrate 100 is then displaced relative to the second substrate 200 by a distance of (Y2-Y1) along the second axis (Y-axis) direction. Then, a first light having a first wavelength is irradiated onto the first substrate 100 where the electronic devices 1221 in the first row and second column of the first electronic device matrix are located, causing thermal or photolysis and loss of viscosity. The electronic devices 1221 in the first row and second column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. 2F, the first substrate 100 is displaced relative to the second substrate 200 by a distance (X2-X1) along the first axis direction (X-axis direction), and a first light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 1222 in the second row and column of the first electronic device matrix are located, causing thermal or photodecomposition to cause loss of viscosity, thereby selectively peeling off the electronic devices 1222 in the second row and column and bonding them to the second top surface 200A of the second substrate 200. Similarly, as shown in FIG. 2G, the other electronic devices 1223-122M in the third to Mth rows may also be selectively peeled off and bonded to the second top surface 200A of the second substrate 200 by the same method as described above.

[0060] As shown in FIG. 2H, after the electronic devices 1211 to 12NM located on the first substrate 100 are selectively peeled off by the above method and bonded to the second upper surface 200A of the second substrate 200, a second electronic device matrix (not shown) can be formed on the second upper surface 200A of the second substrate 200. The row pitch and column pitch of the second electronic device matrix are X2 and Y2, respectively. Here, when X2>X1, that is, the row pitch X2 of the second electronic device matrix is larger than the row pitch X1 of the first electronic device matrix. When X2<X1, that is, the row pitch X2 of the second electronic device matrix is smaller than the row pitch X1 of the first electronic device matrix. Also, when Y2>Y1, that is, the column pitch Y2 of the second electronic device matrix is larger than the column pitch Y1 of the first electronic device matrix. When Y2<Y1, that is, the column pitch Y2 of the second electronic device matrix is smaller than the column pitch Y1 of the first electronic device matrix.

[0061] Example 2

[0062] Hereinafter, referring to the top views of FIGS. 2A-1 to 2E-1, another method for transferring a large number of pitch-adjustable electronic devices according to this Example 2 will be described in detail.

[0063] First, refer to FIG. 2A-1. As shown in FIG. 2A-1, a first substrate 100 having a first upper surface 100A and a first lower surface 100B facing each other is provided. Here, the first upper surface 100A of the first substrate 100 has a plurality of electronic devices 1211-12NM. The electronic devices 1211-12NM are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix (not shown) of M rows of electronic devices and N columns of electronic devices. Here, the first substrate 100 is a pyrolytic rubber film or a photolytic rubber film. The first axis direction and the second axis direction are substantially perpendicular to each other. Here, M and N are natural numbers greater than 1. The row pitch and column pitch of the first electronic device matrix are X1 and Y1, respectively, where X1 and Y1 are greater than 0. In this first embodiment, the first axis direction is described as the X-axis direction and the second axis direction is described as the Y-axis direction, but in other embodiments of the present invention, the first axis direction may be the Y-axis direction and the second axis direction may be the X-axis direction, as necessary.

[0064] The electronic devices 1211 to 12NM in this Example 2 are selected from one or more groups consisting of, for example, a light-emitting diode, a laser diode, and a semiconductor element, but are not limited thereto. The light emitted by these light-emitting diodes is, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode is, for example, 390 nm to 1700 nm, but is not limited thereto. The semiconductor element is, for example, selected from one or more groups consisting of, for example, a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC, but is not limited thereto.

[0065] Next, referring to FIG. 2B-1, a second substrate 200 is provided. The second substrate 200 is disposed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B that face each other. The first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200.

[0066] Next, referring to FIGS. 2B-1 to 2E-1, first light having a first wavelength is supplied above the first substrate 100. The first light having the first wavelength is irradiated onto the first substrate 100 on which the electronic device 12KJ in the Jth row and Kth column of the first electronic device matrix is ​​located, causing thermal or photolysis and loss of viscosity. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The electronic device 12KJ in the Jth row and Kth column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. As shown in FIG. 2C-1, first, the first substrate 100 is displaced relative to the second substrate 200 by a distance (Y2-Y1) along the second axis direction (Y-axis direction). Y2>0 and Y1≠Y2. First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 12(K+1)J in the Jth row and (K+1)th column of the first electronic device matrix are located, causing thermal or photolysis and loss of viscosity. The electronic devices 12(K+1)J in the Jth row and (K+1)th column are selectively peeled off and bonded to the second top surface of the second substrate 200. Here, J, K, and Y2 are all natural numbers, and 1≦J≦(M−1) and 1≦K≦(N−1). In the second embodiment, a case has been described in which all of the electronic devices 121J to 12NJ in the Jth row are selectively peeled off and bonded to the second top surface 200A of the second substrate 200. However, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 121J to 12NJ in the Jth row and bond them to the second top surface 200A of the second substrate 200, as necessary.

[0067] As shown in FIG. 2B-1, when J=1 and K=1, first light having a first wavelength is supplied above the first substrate 100. The first light having the first wavelength is irradiated onto the first substrate 100 on which the electronic devices 1211 in the first column and first row of the first electronic device matrix are located, causing them to lose their viscosity through thermal or photolysis. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The electronic devices 1211 in the first column and first row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. As shown in FIG. 2C-1, first, the first substrate 100 is displaced relative to the second substrate 200 by a distance (Y2-Y1) along the second axis direction (Y-axis direction). First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 1221 in the first row and second column of the first electronic device matrix are located, causing thermal or photolysis and losing viscosity. The electronic devices 1221 in the first row and second column are selectively peeled off and bonded to the second top surface 200A of the second substrate 200. Similarly, the other electronic devices 1231-12N1 in the first row may also be selectively peeled off and bonded to the second top surface 200A of the second substrate 200 by the same method as described above.

[0068] 2D-1 to 2E-1. After the electronic devices 121J to 12NJ in the Jth row of the first electronic device matrix are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, the first substrate 100 is first realigned with the second substrate 200. Next, the first substrate 100 is displaced relative to the second substrate 200 along the first axis direction (X-axis direction) by a distance of (X2-X1). X2>0 and X1≠X2. First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic device 12K(J+1) in the (J+1)th row, Kth column of the first electronic device matrix is ​​located, causing thermal or photolysis to cause the electronic device to lose viscosity. The electronic device 12K(J+1) in the (J+1)th row, Kth column is selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. The first substrate is displaced relative to the second substrate by a distance (Y2-Y1) along the second axis direction. First light having a first wavelength is irradiated onto the first substrate 100, on which the electronic device 12(K+1)(J+1) in the (J+1)th row and (K+1)th column of the first electronic device matrix is ​​located, to cause thermal or photolysis and loss of viscosity. The electronic device 12(K+1)(J+1) in the (J+1)th row and (K+1)th column is selectively peeled off and bonded to the second top surface 200A of the second substrate 200, where X2 is a natural number. After all or some of the electronic devices on the first substrate are selectively peeled off and bonded to the second top surface 200A of the second substrate 200, a second electronic device matrix (not shown) can be formed on the second top surface 200A of the second substrate 200.

[0069] As shown in FIG. 2D-1, when J=1 and K=1, the electronic devices 1211-12N1 in the first row of the first electronic device matrix are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. The first substrate 100 is then realigned with the second substrate 200. The first substrate 100 is then displaced relative to the second substrate 200 by a distance of (X2-X1) along the first axis (X-axis) direction. A first light having a first wavelength is irradiated onto the first substrate 100 where the electronic devices 1212 in the second row and first column of the first electronic device matrix are located, causing thermal or photolysis and loss of viscosity. The electronic devices 1212 in the second row and first column are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. As shown in FIG. 2E-1, first, the first substrate 100 is displaced relative to the second substrate 200 by a distance (Y2-Y1) along the second axis direction (Y-axis direction). Then, first light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 1222 in the second row and second column of the first electronic device matrix are located, causing thermal or photolysis and loss of viscosity. The electronic devices 1222 in the second row and second column are selectively peeled off and bonded to the second top surface 200A of the second substrate 200. Similarly, the other electronic devices 1232-12N2 in the second row may also be selectively peeled off and bonded to the second top surface 200A of the second substrate 200 by the same method as described above.

[0070] As shown in FIG. 2E-1, after the electronic devices 1211 to 12NM located on the first substrate 100 are selectively peeled off by the above-described method and bonded to the second upper surface 200A of the second substrate 200, a second electronic device matrix (not shown) can be formed on the second upper surface 200A of the second substrate 200. The row pitch and column pitch of the second electronic device matrix are X2 and Y2, respectively. When X2>X, that is, the row pitch X2 of the second electronic device matrix is larger than the row pitch X1 of the first electronic device matrix. When X2<X1, that is, the row pitch X2 of the second electronic device matrix is smaller than the row pitch X1 of the first electronic device matrix. When Y2>Y1, that is, the column pitch Y2 of the second electronic device matrix is larger than the column pitch Y1 of the first electronic device matrix. When Y2<Y1, that is, the column pitch Y2 of the second electronic device matrix is smaller than the column pitch Y1 of the first electronic device matrix.

[0071] Example 3

[0072] Hereinafter, referring to the top views of FIGS. 3A to 3I, a method for transferring a large number of electronic devices with adjustable pitch according to this Example 3 will be described in detail.

[0073] First, refer to FIG. 3A. As shown in FIG. 3A, a first substrate 100 is provided. The first substrate 100 has a first upper surface 100A and a first lower surface 100B facing each other. The first upper surface 100A of the first substrate 100 has a plurality of electronic devices 1211-12NM. The electronic devices 1211-12NM are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix (not shown) of M rows of electronic devices and N columns of electronic devices. The first substrate 100 is a thermally decomposable rubber film or a photolytic rubber film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row pitch and column pitch of the first electronic device matrix are X1 and Y1, respectively, where X1 and Y1 are greater than 0. In the first embodiment, the first axis direction is illustratively described as the X-axis direction and the second axis direction is illustratively described as the Y-axis direction. However, in other embodiments of the present invention, the first axis direction may be the Y-axis direction and the second axis direction may be the X-axis direction, as necessary.

[0074] The electronic devices 1211 to 12NM in this Example 3 are selected from one or more groups consisting of, for example, a light-emitting diode, a laser diode, and a semiconductor element, but are not limited thereto. The light emitted by the light-emitting diode is, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light. The wavelength of the laser diode is, for example, 390 nm to 1700 nm, but is not limited thereto. The semiconductor element is, for example, selected from one or more groups consisting of, for example, a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC, but is not limited thereto.

[0075] Next, referring to Figure 3B, a second substrate 200 is provided and placed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B facing each other. The first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200. The second substrate 200 is a pyrolytic rubber film or a photolytic rubber film.

[0076] Next, with reference to FIGS. 3B to 3D, first light having a first wavelength is provided above the first substrate 100. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The first light having the first wavelength is irradiated onto the first substrate 100 on which the electronic devices 12K1 to 12KM in the Kth column of the first electronic device matrix are located, causing thermal or photolysis and losing viscosity. All of the electronic devices in the Kth column are peeled off and bonded to the second top surface 200A of the second substrate 200. In this third embodiment, the case in which all of the electronic devices 12K1 to 12KM in the Kth column are selectively peeled off and bonded to the second top surface 200A of the second substrate 200 has been described as an example. However, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 12K1 to 12KM in the Kth column and bond them to the second top surface 200A of the second substrate 200, as necessary. Then, the first substrate 100 is displaced relative to the second substrate 200 by a distance (Y2-Y1) along the second axis direction (Y-axis direction). Y2>0 and Y1≠Y2. First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 12(K+1)1 to 12(K+1)M in the (K+1)th column of the first electronic device matrix are located, causing them to lose viscosity through thermal or photolysis. The first light having the first wavelength is, for example, light having a wavelength of 100 nm to 12,000 nm, but is not limited thereto. All or part of the electronic devices 12(K+1)1 to 12(K+1)M in the (K+1)th column are peeled off and bonded to the second upper surface 200A of the second substrate 200. K is a natural number, and 1≦K≦(N-1), Y2>0, and Y1≠Y2. In this embodiment 3, an example has been described in which all of the electronic devices 12(K+1)1 to 12(K+1)M in the (K+1)th row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, but in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 12(K+1)1 to 12(K+1)M in the (K+1)th row and bond them to the second upper surface 200A of the second substrate 200, as necessary.

[0077] As shown in FIG. 3B, when K=1, first light having a first wavelength is provided above the first substrate 100. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The first light having the first wavelength is irradiated onto the first substrate 100 on which the electronic devices 1211-121M in the first column of the first electronic device matrix are located, causing thermal or photolysis and losing viscosity. All of the electronic devices 1211-121M in the first column are peeled off and bonded to the second top surface 200A of the second substrate 200. In this third embodiment, the case where all of the electronic devices 1211-121M in the first column are selectively peeled off and bonded to the second top surface 200A of the second substrate 200 has been described as an example. However, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 1211-121M in the first column and bond them to the second top surface 200A of the second substrate 200, as necessary. 3C, the first substrate 100 is displaced relative to the second substrate 200 by a distance (Y2-Y1) along the second axis (Y-axis). Then, first light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 1221-122M in the second column of the first electronic device matrix are located, causing thermal or photolysis and loss of viscosity. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. All of the electronic devices 1221-122M in the second column are peeled off and bonded to the second upper surface 200A of the second substrate 200. Y2>0, Y1≠Y2. In the third embodiment, a case has been described in which all of the electronic devices 1221 to 122M in the second row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. However, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 1221 to 122M in the second row and bond them to the second upper surface 200A of the second substrate 200, as necessary. Similarly, as shown in FIG. 3D , all or some of the other electronic devices 1231 to 123M in the third to Nth rows may also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 by the same method as described above.

[0078] As shown in FIG. 3E, after all of the electronic devices 1211 to 12NM located on the first substrate 100 are selectively peeled off by the above method and bonded to the second upper surface 200A of the second substrate 200, a second electronic device matrix (not shown) can be formed on the second upper surface 200A of the second substrate 200. The row pitch and column pitch of the second electronic device matrix are X1 and Y2, respectively. When Y2>Y1, that is, the column pitch of the second electronic device matrix is larger than the column pitch of the first electronic device matrix. When Y2<Y1, that is, the column pitch of the second electronic device matrix is smaller than the column pitch of the first electronic device matrix.

[0079] As shown in FIGS. 3F to 3I, in the third embodiment, all or part of the electronic devices 1211 to 12NM located on the second substrate 200 are transferred to the third substrate 300, and a third electronic device matrix (not shown) is formed on the third substrate 300. The row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively, and X1≠X2, Y1≠Y2.

[0080] As shown in FIGS. 3F to 3I, a third substrate 300 is provided and placed below the second substrate 200. The third substrate 300 has a third upper surface 300A and a third lower surface 300B facing each other. The second upper surface 200A of the second substrate 200 faces the third upper surface 300A of the third substrate 300. Second light having a second wavelength is supplied above the second substrate 200, and the second light having the second wavelength is irradiated onto the second substrate 200 on which the electronic devices in row J of the second electronic device matrix are located, thereby thermally or photolytically decomposing the second substrate 200 and causing it to lose its viscosity. The second light having the second wavelength is, for example, light with a wavelength of 100 nm to 12,000 nm, but is not limited thereto. All of the electronic devices 121J to 12NJ in row J are peeled off and bonded to the third upper surface 300A of the third substrate 300. Next, the second substrate 200 is displaced relative to the third substrate 300 along the first axis by a distance (X2-X1), where X2>0 and X1≠X2. Then, a second light having a second wavelength is irradiated onto the second substrate 200 on which the electronic devices 121(J+1) to 12N(J+1) in the (J+1)th row of the second electronic device matrix are located, causing the second substrate 200 to thermally or photolytically decompose and lose its viscosity. All or part of the electronic devices 121(J+1) to 12N(J+1) in the (J+1)th row are peeled off and bonded to the third upper surface 300A of the third substrate 300. J is a natural number, 1≦J≦(M-1). After all of the electronic devices 1211 to 12NM located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic device matrix (not shown) can be formed on the third substrate 300. The row pitch and column pitch of the third electronic device matrix (not shown) are X2 and Y2, respectively. In the third embodiment, the electronic devices 121J to 12NJ in the Jth row and the electronic devices 121(J+1) to 12N(J+1) in the (J+1)th row are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300. However, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 121J to 12NJ in the Jth row and the electronic devices 121(J+1) to 12N(J+1) in the (J+1)th row and bond them to the third upper surface 300A of the third substrate 300, as necessary.

[0081] As shown in FIG. 3F, when J=1, second light having a second wavelength is provided above the second substrate. The second light having the second wavelength is irradiated onto the second substrate 200 on which the electronic devices in the first row of the second electronic device matrix are located, causing the second substrate 200 to thermally or photolyze and lose its viscosity. The second light having the second wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. All or part of the electronic devices 1211 to 12N1 in the first row are peeled off and bonded to the third upper surface 300A of the third substrate 300.

[0082] 3G, the second substrate 200 is displaced relative to the third substrate 300 by a distance (X2-X1) along the first axis. A second light having a second wavelength is irradiated onto the second substrate 200 on which the electronic devices 1212-12N2 in the second row of the second electronic device matrix are located, causing the second substrate 200 to thermally or photolytically decompose and lose its viscosity. All or part of the electronic devices 1212-12N2 in the second row are peeled off and bonded to the third upper surface 300A of the third substrate 300.

[0083] Next, as shown in FIG. 3H, the second substrate 200 is again displaced relative to the third substrate 300 by a distance (X2-X1) along the first axis direction. Then, a second light having a second wavelength is irradiated onto the second substrate 200 on which the electronic devices 1213-12N3 in the third row of the second electronic device matrix are located, causing the second substrate 200 to thermally or photolytically decompose and lose its viscosity. All or part of the electronic devices 1213-12N3 in the third row are peeled off and bonded to the third top surface 300A of the third substrate 300. Similarly, the other electronic devices 1214-12NM in the fourth to Mth rows may also be selectively peeled off and bonded to the third top surface 300A of the third substrate 300 using the same method as described above.

[0084] As shown in FIG. 3I, after all of the electronic devices 1211 to 12NM of the second electronic device matrix located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic device matrix (not shown) can be formed on the third substrate 300. The row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively. When X2>X1, that is, the row pitch of the third electronic device matrix is larger than the row pitch of the second electronic device matrix. When X2<X1, that is, the row pitch of the third electronic device matrix is smaller than the row pitch of the second electronic device matrix.

[0085] In the third embodiment, although it has been described by way of example that all of the electronic devices 1211 to 12NM of the second electronic device matrix located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, in other embodiments of the present invention, if necessary, a part of the electronic devices 1211 to 12NM of the second electronic device matrix located on the second substrate 200 can be selectively peeled off and bonded to the third upper surface 300A of the third substrate 300.

[0086] Embodiment 4

[0087] Hereinafter, referring to the top views of FIGS. 3A-1 to 3H-1, a method for transferring a large number of electronic devices with adjustable pitch according to the fourth embodiment will be described in detail.

[0088] First, refer to FIG. 3A-1. As shown in FIG. 3A-1, a first substrate 100 is provided. The first substrate 100 has a first upper surface 100A and a first lower surface 100B facing each other. The first upper surface 100A of the first substrate 100 has a plurality of electronic devices 1211-12NM. The electronic devices 1211-12NM are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix (not shown) of M rows of electronic devices and N columns of electronic devices. The first substrate 100 is a pyrolytic rubber film or a photolytic rubber film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row pitch and column pitch of the first electronic device matrix are X1 and Y1, respectively, where X1 and Y1 are greater than 0. In this first embodiment, the first axis direction is described as the X-axis direction and the second axis direction is described as the Y-axis direction, but in other embodiments of the present invention, the first axis direction may be the Y-axis direction and the second axis direction may be the X-axis direction, as necessary.

[0089] The electronic devices 1211 to 12NM in this Example 4 are selected from one or more groups consisting of, for example, a light-emitting diode, a laser diode, and a semiconductor element, but are not limited thereto. The light emitted by the light-emitting diode is, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode is, for example, 390 nm to 1700 nm, but is not limited thereto. The semiconductor element is, for example, selected from one or more groups consisting of, for example, a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC, but is not limited thereto.

[0090] Next, referring to FIG. 3B-1, a second substrate 200 is provided and placed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B facing each other. The first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200. The second substrate 200 is a thermally decomposable rubber film or a photolytic rubber film.

[0091] Next, with reference to FIGS. 3B-1 to 3D-1, first light having a first wavelength is provided above the first substrate 100. The first light having the first wavelength is, for example, light having a wavelength of 100 nm to 12,000 nm. The first substrate 100 on which the electronic devices 121J to 12NJ in row J of the first electronic device matrix are located is irradiated with the first light having the first wavelength to cause thermal or photolysis, thereby losing viscosity. All of the electronic devices 121J to 12NJ in row J are peeled off and bonded to the second top surface 200A of the second substrate 200. In Example 4, a case has been described in which all of the electronic devices 121J to 12NJ in row J are selectively peeled off and bonded to the second top surface 200A of the second substrate 200. However, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 121J to 12NJ in row J and bond them to the second top surface 200A of the second substrate 200, as necessary. Next, the first substrate 100 is displaced relative to the second substrate 200 along the first axis by a distance of (X2-X1), where X2>0 and X1≠X2. First light having a first wavelength is irradiated onto the first substrate 200 on which the electronic devices 121(J+1) to 12N(J+1) in the (J+1)th row of the first electronic device matrix are located, causing thermal or photolysis and losing viscosity. All of the electronic devices 121(J+1) to 12N(J+1) in the (J+1)th row are peeled off and bonded to the second upper surface 200A of the second substrate 200, where J is a natural number, 1≦J≦(M-1). In this embodiment 4, an example has been described in which all of the electronic devices 121(J+1) to 12N(J+1) in the (J+1)th row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, but in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 121(J+1) to 12N(J+1) in the (J+1)th row and bond them to the second upper surface 200A of the second substrate 200, if necessary.

[0092] 3B-1, when J=1, first light having a first wavelength is supplied above the first substrate 100. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The first light having the first wavelength is irradiated onto the first substrate 100 on which the electronic devices 1211-12N1 in the first row of the first electronic device matrix are located, causing thermal or photolysis and losing viscosity. All of the electronic devices 1211-12N1 in the first row are peeled off and bonded to the second upper surface 200A of the second substrate 200. In Example 4, all of the electronic devices 1211-12N1 in the first row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200. However, in other examples of the present invention, it is also possible to selectively peel off some of the electronic devices 1211-12N1 in the first row and bond them to the second upper surface 200A of the second substrate 200, as necessary. Next, as shown in FIG. 3C-1, the first substrate 100 is first displaced relative to the second substrate 200 by a distance (X2-X1) along the first axis direction, where X2>0 and X1≠X2. Next, first light having a first wavelength is irradiated onto the first substrate 200 on which the electronic devices 1212-12N2 in the second row of the first electronic device matrix are located, causing thermal or photolysis and losing viscosity. All of the electronic devices 1212-12N2 in the second row are peeled off and bonded to the second upper surface 200A of the second substrate 200. Although the fourth embodiment has been described as an example in which all of the electronic devices 1212 to 12N2 in the second row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, in other embodiments of the present invention, if necessary, it is also possible to selectively peel off some of the electronic devices 1212 to 12N2 in the second row and bond them to the second upper surface 200A of the second substrate 200. Similarly, as shown in FIG. 3D-1 , all of the other electronic devices 1213 to 12NM in the third to Mth rows may also be selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 by the same method as described above.

[0093] As shown in FIG. 3E-1, after all of the electronic devices 1211 to 12NM located on the first substrate 100 are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 by the above-described method, a second electronic device matrix (not shown) can be formed on the second upper surface 200A of the second substrate 200. The row pitch and column pitch of the second electronic device matrix are X2 and Y1, respectively. When X2>X1, that is, the row pitch X2 of the second electronic device matrix is larger than the row pitch X1 of the first electronic device matrix. When X2<X1, that is, the row pitch X2 of the second electronic device matrix is smaller than the row pitch X1 of the first electronic device matrix.

[0094] As shown in FIGS. 3F-1 to 3H-1, in the fourth embodiment, all or part of the electronic devices 1211 to 12NM located on the second substrate 200 are transferred to the third substrate 300, and a third electronic device matrix (not shown) can be formed on the third substrate 300. The row pitch and column pitch of the third electronic device matrix (not shown) are X2 and Y2, respectively.

[0095] As shown in FIGS. 3F-1 to 3H-1, a third substrate 300 is provided and positioned below the second substrate 200. The third substrate 300 has a third upper surface 300A and a third lower surface 300B facing each other. The second upper surface 200A of the second substrate 200 faces the third upper surface 300A of the third substrate 300. A second light having a second wavelength is provided above the second substrate 200. The second light having the second wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The second light having the second wavelength is irradiated onto the second substrate 200 on which the electronic devices 12K1 to 12KM in the Kth column of the second electronic device matrix are located, thereby thermally or photolytically decomposing the second substrate 200 and causing it to lose its viscosity. K is a natural number, and 1≦K≦(N−1). All or some of the electronic devices 12K1-12KM in the Kth row are peeled off and bonded to the third upper surface of the third substrate. In this fourth embodiment, the case where all of the electronic devices 12K1-12KM in the Kth row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200 has been described as an example. However, in other embodiments of the present invention, it is also possible to selectively peel off the electronic devices 12K1-12KM in the Kth row and bond them to the second upper surface 200A of the second substrate 200 as necessary. The second substrate 200 is displaced by a distance (Y2>Y1) along the second axis direction relative to the third substrate 300, where Y2>0 and Y1≠Y2. Then, a second light having a second wavelength is irradiated onto the second substrate 200 on which the electronic devices 12(K+1)1 to 12(K+1)M in the (K+1)th column of the second electronic device matrix are located, causing the second substrate 200 to thermally or photolytically decompose and lose its viscosity. All or some of the electronic devices 12(K+1)1 to 12(K+1)M in the (K+1)th column are peeled off and bonded to the third upper surface 300A of the third substrate 300. After all or some of the electronic devices 1211 to 12NM of the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic device matrix (not shown) can be formed on the third substrate 300. The row pitch and column pitch of the third electronic device matrix (not shown) are X2 and Y2, respectively.

[0096] As shown in FIG. 3F-1, when K=1, second light having a second wavelength is supplied above the second substrate 200. The second light having the second wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The second light having the second wavelength is irradiated onto the second substrate 200 on which the electronic devices 1211-121M in the first column of the second electronic device matrix are located, causing the second substrate 200 to thermally or photolytically decompose and lose its viscosity. All of the electronic devices 1211-121M in the first column are then peeled off and bonded to the third upper surface of the third substrate. In this embodiment 4, an example has been described in which all of the electronic devices 1211 to 121M in the first row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, but in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 1211 to 121M in the first row and bond them to the second upper surface 200A of the second substrate 200, as necessary.

[0097] Next, as shown in FIG. 3G-1, the second substrate 200 is displaced relative to the third substrate 300 along the third axis direction by a distance (Y2>Y1), where Y2>0 and Y1≠Y2. Second light having a second wavelength is irradiated onto the second substrate 200 on which the electronic devices 1221-122M in the second column of the second electronic device matrix are located, causing the second substrate 200 to thermally or photolytically decompose and lose its viscosity. All of the electronic devices 1221-122M in the second column are then peeled off and bonded to the third upper surface 300A of the third substrate 300. Although the fourth embodiment has been described as an example in which all of the electronic devices 1221-122M in the second row are selectively peeled off and bonded to the second upper surface 200A of the second substrate 200, in other embodiments of the present invention, it is also possible to selectively peel off some of the electronic devices 1221-122M in the second row and bond them to the second upper surface 200A of the second substrate 200, as necessary. Similarly, the other electronic devices 1231-12NM in the third to Nth rows may also be selectively peeled off in whole or in part and bonded to the third upper surface 300A of the third substrate 300 by the same method as described above.

[0098] As shown in FIG. 3H-1, after all of the electronic devices 1211 to 12NM located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic device matrix (not shown) can be formed on the third substrate 300. The row pitch and column pitch of the third electronic device matrix (not shown) are X2 and Y2, respectively. When Y2>Y1, that is, the column pitch of the third electronic device matrix is larger than the column pitch of the second electronic device matrix. When Y2<Y1, that is, the column pitch of the third electronic device matrix is smaller than the column pitch of the second electronic device matrix.

[0099] In the present Example 4, it has been exemplified and described that all of the electronic devices 1211 to 12NM of the second electronic device matrix located on the second substrate 200 are selected and bonded to the third upper surface 300A of the third substrate 300. However, in other embodiments of the present invention, if necessary, it is also possible to selectively peel off a part of the electronic devices 1211 to 12NM of the second electronic device matrix located on the second substrate 200 and bond them to the third upper surface 300A of the third substrate 300.

[0100] Example 5

[0101] Hereinafter, referring to FIGS. 4A to 4E, a method for transferring a large number of electronic devices with adjustable pitch according to the present Example 5 will be described in detail.

[0102] First, refer to FIG. 4A. As shown in FIG. 4A, a first substrate 100 is provided. The first substrate 100 has a first upper surface 100A and a first lower surface 100B facing each other. The first upper surface 100A of the first substrate 100 has a plurality of electronic devices 1211-12NM. The electronic devices 1211-12NM are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix (not shown) of M rows of electronic devices and N columns of electronic devices. The first substrate 100 is a pyrolytic rubber film or a photolytic rubber film, the first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row pitch and column pitch of the first electronic device matrix are X1 and Y1, respectively, where X1 and Y1 are greater than 0. In the first embodiment, the first axis direction is illustratively described as the X-axis direction and the second axis direction is illustratively described as the Y-axis direction. However, in other embodiments of the present invention, the first axis direction may be the Y-axis direction and the second axis direction may be the X-axis direction, as necessary.

[0103] The electronic devices 1211 to 12NM in this Example 5 are selected from one or more groups consisting of, for example, a light-emitting diode, a laser diode, and a semiconductor element, but are not limited thereto. The light emitted by the light-emitting diode is, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode is, for example, 390 nm to 1700 nm, but is not limited thereto. The semiconductor element is, for example, selected from one or more groups consisting of, for example, a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC, but is not limited thereto.

[0104] Next, reference is made to Figures 4B to 4C. As shown in Figures 4B to 4C, a second substrate 200 is provided and placed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B that face each other. The first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200. The second substrate 200 is a pyrolytic rubber film or a photolytic rubber film.

[0105] Next, the electronic devices in the R1 row located on the first substrate 100 are set as a first baseline 110 along the first axial direction of the first substrate 100, and the electronic devices in the R2 row located on the second substrate 200 are set as a second baseline 210 along the first axial direction of the second substrate 200, and the first baseline 110 is aligned with the second baseline 210. Next, first light having a first wavelength is provided above the first substrate 100. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 12(N1)J or the electronic devices 12(N1)1 to 12(N1)M in the N1 column of the first electronic device matrix are located, causing thermal or photodecomposition to cause them to lose viscosity, and the electronic devices 12(N1)J or the electronic devices 12(N1)1 to 12(N1)M in the N1 column located on the first substrate are selectively peeled off and bonded to the second top surface 200A of the second substrate 200. This results in the electronic devices 22(N2)(j) or the electronic devices 22(N2)1 to 22(N2)P in the N2 column of the second electronic device matrix located on the second top surface 200A of the second substrate 200. Here, R1, R2, N1, N2, J, and j are natural numbers, where N1≦N, N2≦Q, 1≦R1≦N1, 1≦R2≦N2, 1≦J≦M, and 1≦j≦P, and P is a natural number greater than 1, where P≠M. As shown in FIG. 4C , after all or some of the electronic devices 1211-12NM of the first substrate 100 are transferred to the second substrate 200, a second electronic device matrix (not shown) consisting of P rows of electronic devices and Q columns of electronic devices may be formed on the second upper surface 200 of the second substrate 200. P and Q are natural numbers greater than 1, where P≠M and / or Q≠N, and the column pitch of the second electronic device matrix is ​​Y2, where Y2>0 and Y1≠Y2.

[0106] The pitch between the electronic device 12(N1)J or the electronic devices 12(N1)1 to 12(N1)M in the N1th row located on the first substrate 100 and the first baseline 110 of the first substrate 100 is ΔY1=(N1-R1)*Y1. The pitch between the electronic device 22(N2)J or the electronic devices 22(N2)1 to 12(N2)P in the N2th row located on the second substrate 200 and the second baseline 210 of the second substrate 200 is ΔY2=(N1-R2)*Y2. Therefore, when an electronic device 12(N1)J or electronic devices 12(N1)1 to 12(N1)M in column N1 of the first electronic device matrix located on the first substrate 100 is transferred to the second substrate 200 to become an electronic device 22(N2)J or electronic devices 22(N2)1 to 12(N2)P in column N2 of the second electronic device matrix, the relative movement distance ΔY along the second axis direction (Y axis direction) is [(N2-R2)*Y2-(N1-R1)*Y1].

[0107] 4B and 4C , when R1=1 and R2=2, that is, the electronic devices in the first row on the first substrate 100 are set as a first baseline 110 along the first axial direction of the first substrate 100, and the electronic devices in the second row located on the second substrate 200 are set as a second baseline 210 along the first axial direction of the second substrate 200, and the first baseline 110 is aligned with the second baseline 210. Then, a first light having a first wavelength is provided above the first substrate 100. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 12(N1)J or the electronic devices 12(N1)1 to 12(N1)M in the N1 column of the first electronic device matrix are located, causing thermal or photodecomposition to cause loss of viscosity, and selectively peeling off the electronic devices 12(N1)J or the electronic devices 12(N1)1 to 12(N1)M in the N1 column of the first substrate and bonding them to the second top surface 200A of the second substrate 200, becoming electronic devices 22(N2)J or the electronic devices 22(N2)1 to 12(N2)P in the N2 column of the second electronic device matrix, where N1 and N2 are natural numbers, N1≦N, N2≦Q.

[0108] 4C, the pitch between the electronic device 12(N1)J or the electronic devices 12(N1)1 to 12(N1)M in the N1th row located on the first substrate 100 and the first baseline 110 of the first substrate 100 is ΔY1=(N1-1)*Y1. The pitch between the electronic device 22(N2)J or the electronic devices 22(N2)1 to 22(N2)P in the N2th row located on the second substrate 200 and the second baseline 110 of the second substrate 200 is ΔY2=(N2-2)*Y2. Then, when electronic device 12(N1)J or electronic devices 12(N1)1 to 12(N1)M in column N1 of the first electronic device matrix located on the first substrate 100 is transferred to the second substrate 200 to become electronic device 22(N2)J or electronic device 22(N2)1 to 12(N2)P in column N2 of the second electronic device matrix, the relative movement distance along the second axis direction is ΔY=ΔY2-ΔY1, i.e., ΔY is [(N2-2)*Y2-(N1-1)*Y1].

[0109] In this fifth embodiment, the second matrix located on the second substrate 200 is further transferred to the third substrate 300 to form a third electronic device matrix (not shown) with U rows of electronic devices and V columns of electronic devices on the third substrate 300. The row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively, where U and V are natural numbers greater than 1, X2, Y2>0, X1≠X2, and Y1≠Y2.

[0110] As shown in FIGS. 4D and 4E, in this fifth embodiment, a third substrate 300 is provided and placed below the second substrate 200. The third substrate 300 has a third upper surface 300A and a third lower surface 300B facing each other. The second upper surface 200A of the second substrate 200 faces the third upper surface 300A of the third substrate 300. The second electronic device matrix on the second substrate 200 is transferred to the third substrate 300 to form a third electronic device matrix (not shown) on the third upper surface 300A of the third substrate 300, which has U rows of electronic devices and V columns of electronic devices. The row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively, where U and V are natural numbers greater than 1.

[0111] The electronic devices 221(S1) to 22Q(S1) in the S1 row where the second substrate 200 is located are set as a third baseline 250 along the second axis direction of the second substrate 200, and the electronic devices 221(S2) to 22V(S2) in the S2 row where the third substrate 300 is located are set as a fourth baseline 350 along the second axis direction of the third substrate 300, and the third baseline 250 is aligned with the fourth baseline 350. Then, second light having a second wavelength is supplied onto the second substrate. The second light having the second wavelength is light having a wavelength of 100 nm to 12,000 nm, but is not limited to this. The second substrate 200 on which the electronic devices 22K (M1) or 221 (M1) to 22Q (M1) in the M1 row of the second electronic device matrix are located is irradiated with second light having a second wavelength to cause thermal or photolysis to cause the electronic devices to lose viscosity, selectively peeling off the electronic devices 22K (M1) or 221 (M1) to 22Q (M1) in the M1 row located on the second substrate and bonding them to the third top surface 300A of the third substrate 300 to become the electronic devices 32k (M2) or 321 (M2) to 32V (M2) in the M2 row of the third electronic device matrix, where S1, S2, M1, M2, K, and k are natural numbers such that M1≦M, M2≦U, 1≦S1≦M1, 1≦S2≦M2, 1≦K≦Q, and 1≦k≦V.

[0112] The pitch between the electronic device 22K (M1) or the electronic devices 221 (M1) to 22Q (M1) in the M1-th row located on the second substrate 200 and the third baseline 250 of the second substrate 200 is ΔX1 = (M1 - S1) * X1. The pitch between the electronic device 32k (M2) or the electronic devices 321 (M2) to 32V (M2) in the M2-th row located on the third substrate 300 and the fourth baseline 350 of the third substrate 300 is ΔX2 = (M1 - S2) * X2. Then, when the electronic device 22K (M1) or the electronic devices 221 (M1) to 22Q (M1) in the M1-th row located on the second substrate 200 is transferred to the third substrate 300 to become the electronic device 32k (M2) or the electronic devices 321 (M2) to 32V (M2) in the M2-th column of the third electronic device matrix, the relative movement distance ΔX along the first axis direction (X-axis direction) is [(M2-S2)*X2-(M1-S1)*X1].

[0113] 4D , when S1=1 and S2=2, the electronic devices 2211 to 22Q1 in the first row located on the second substrate 200 are set as a first / third baseline 250 along the second axis direction of the second substrate 200, and the electronic devices 2212 to 22V2 in the second row located on the third substrate 300 are set as a fourth baseline 350 along the second axis direction of the third substrate 300, and the third baseline 250 is aligned with the fourth baseline 350. Then, second light having a second wavelength is supplied above the second substrate. The second light having the second wavelength is light having a wavelength of 100 nm to 12,000 nm, but is not limited thereto. A second light having a second wavelength is irradiated onto the second substrate 200 on which the electronic devices 22K (M1) or the electronic devices 221 (M1) to 22Q (M1) in the M1 row of the second electronic device matrix are located, causing thermal or photolysis to cause them to lose viscosity, and selectively peel off the electronic devices 22K (M1) or the electronic devices 221 (M1) to 222Q (M1) in the M1 row of the second substrate and bond them to the third top surface 300A of the third substrate 300, becoming the electronic devices 32k (M2) or the electronic devices 321 (M2) to 32V (M2) in the M2 row of the third electronic device matrix, where M1, M2, K, and k are natural numbers such that M1≦M, M2≦U, 1≦K≦Q, and 1≦k≦V.

[0114] 4E, the pitch between the electronic device 22K(M1) or the electronic devices 221(M1) to 22Q(M1) in the M1-th row located on the second substrate 200 and the third baseline 250 of the second substrate 200 is ΔX1=(M1-1)*X1. The pitch between the electronic device 32k(M2) or the electronic devices 321(M2) to 32V(M2) in the M2-th row located on the third substrate 300 and the fourth baseline 350 of the third substrate 300 is ΔX2=(M1-2)*X2. Then, when the electronic device 22K (M1) or the electronic devices 221 (M1) to 22Q (M1) in the M1-th row located on the second substrate 200 is transferred to the third substrate 300 to become the electronic device 32k (M2) or the electronic device 321 (M2) to 32V (M2) in the M2-th column of the third electronic device matrix, the relative movement distance ΔX along the first axis direction (X-axis direction) is ΔX2-ΔX1, that is, ΔX=[(M2-2)*X2-(M1-1)*X1].

[0115] 4E, after the electronic devices 2211 to 2212QP located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic device matrix (not shown) may be formed on the third substrate 300. The row pitch and column pitch of the third electronic device matrix (not shown) are X2 and Y2, respectively.

[0116] Example 6

[0117] Hereinafter, a pitch-adjustable method for transferring a large number of electronic devices according to the sixth embodiment will be described in detail with reference to FIGS. 4A-1 to 4E-1.

[0118] First, refer to FIG. 4A-1. As shown in FIG. 4A-1, a first substrate 100 is provided. The first substrate 100 has a first upper surface 100A and a first lower surface 100B facing each other. The first upper surface 100A of the first substrate 100 has a plurality of electronic devices 1211-12NM. The electronic devices 1211-12NM are arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix (not shown) with M rows of electronic devices and N columns of electronic devices. The first substrate 100 is a pyrolytic rubber film or a photolytic rubber film. The first axis direction and the second axis direction are substantially perpendicular to each other, M and N are natural numbers greater than 1, and the row pitch and column pitch of the first electronic device matrix are X1 and Y1, respectively, where X1 and Y1 are greater than 0. In this first embodiment, the first axis direction is described as the X-axis direction and the second axis direction is described as the Y-axis direction, but in other embodiments of the present invention, the first axis direction may be the Y-axis direction and the second axis direction may be the X-axis direction, as necessary.

[0119] The electronic devices 1211 to 12NM in this Example 6 are selected from one or more groups consisting of, for example, a light-emitting diode, a laser diode, and a semiconductor element, but are not limited thereto. The light emitted by the light-emitting diode is, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode is, for example, 390 nm to 1700 nm, but is not limited thereto. The semiconductor element is, for example, selected from one or more groups consisting of, for example, a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC, but is not limited thereto.

[0120] Next, reference is made to FIGS. 4B-1 to 4C-1. As shown in FIGS. 4B-1 to 4C-1, a second substrate 200 is provided. The second substrate 200 is disposed below the first substrate 100. The second substrate 200 has a second upper surface 200A and a second lower surface 200B that face each other. The first upper surface 100A of the first substrate 100 faces the second upper surface 200A of the second substrate 200. The second substrate 200 is a pyrolytic rubber film or a photolytic rubber film.

[0121] Next, the electronic devices in row S1 located on the first substrate 100 are set as a first baseline 110' along the second axis (Y-axis) direction of the first substrate 100, and the electronic devices in row S2 located on the second substrate 200 are set as a second baseline 210' along the second axis (Y-axis) direction of the second substrate 200, and the first baseline 110' is aligned with the second baseline 210'. Next, first light having a first wavelength is supplied above the first substrate 100. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic devices 12K (M1) or the electronic devices 121 (M1) to 12N (M1) in the M1 row of the first electronic device matrix are located, causing thermal or photolysis to cause them to lose viscosity, and selectively peel off the electronic devices 12K (M1) or the electronic devices 121 (M1) to 12N (M1) in the M1 row located on the first substrate 100 and bond them to the second top surface 200A of the second substrate 200, becoming electronic devices 22k (M2) or the electronic devices 221 (M2) to 22Q (M2) in the M2 column of the second electronic device matrix located on the second substrate 200. Here, S1, S2, M1, and M2 are natural numbers, and M1≦M, M2≦P, and 1≦S1≦M1, 1≦S2≦M2. 4C-1, after all or some of the electronic devices 1211 to 12NM located on the first substrate 100 are transferred to the second substrate 200, a second electronic device matrix (not shown) consisting of P rows of electronic devices and Q columns of electronic devices may be formed on the second upper surface 200 of the second substrate 200. Here, P and Q are natural numbers greater than 1, P≠M and / or Q≠N, and the row pitch of the second electronic device matrix is ​​X2, where X2>0 and X1≠X2.

[0122] The pitch between the electronic device 12K (M1) or the electronic devices 121 (M1) to 12N (M1) in the M1-th row located on the first substrate 100 and the first baseline 110' of the first substrate 100 is ΔX1 = (M1 - S1) * X1. The pitch between the electronic device 22k (M2) or the electronic devices 221 (M2) to 22Q (M2) in the M2-th row located on the second substrate 200 and the second baseline 210' of the second substrate 200 is ΔX2 = (M2 - S2) * X2. Therefore, when electronic device 12K (M1) or electronic devices 121 (M1) to 12N (M1) in row M1 of the first electronic device matrix located on the first substrate 100 is transferred to the second substrate 200 to become electronic device 22k (M2) or electronic devices 221 (M2) to 22Q (M2) in column M2 of the second electronic device matrix located on the second substrate 200, the relative movement distance ΔX along the first axis (X-axis) direction is ΔX2-ΔX1, i.e., ΔX=[(M2-S2)*X2-(M1-S1)*X1].

[0123] 4B-1, when S1=1 and S2=2, the electronic devices 1211 to 12N1 in the first row located on the first substrate 100 are set to a first baseline 110' along the second axis (Y-axis) direction of the first substrate 100, and the electronic devices 2212 to 22V2 in the second row located on the second substrate 200 are set to a second baseline 210' along the second axis (Y-axis) direction of the second substrate 200, and the first baseline 110 is aligned with the second baseline 210. Then, first light having a first wavelength is supplied above the first substrate 100. The first light having the first wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. First light having a first wavelength is irradiated onto the first substrate 100 on which the electronic device 12K (M1) or electronic devices 121 (M1) to 12N (M1) in the M1 row of the first electronic device matrix is ​​located, causing thermal or photolysis and losing viscosity. The electronic device 12K (M1) or electronic devices 121 (M1) to 12N (M1) in the M1 row located on the first substrate 100 is selectively peeled off and bonded to the second top surface 200A of the second substrate 200, becoming the electronic device 22k (M2) or electronic devices 221 (M2) to 22Q (M2) in the M2 column of the second electronic device matrix located on the second substrate 200. Here, M1 and M2 are natural numbers, and M1≦M and M2≦P.

[0124] 4C-1, after all or some of the electronic devices 1211 to 12NM located on the first substrate 100 are transferred to the second substrate 200, a second electronic device matrix (not shown) consisting of P rows of electronic devices and Q columns of electronic devices may be formed on the second upper surface 200 of the second substrate 200. Here, P and Q are natural numbers greater than 1, P≠M and / or Q≠N, and the row pitch of the second electronic device matrix is ​​X2, where X2>0 and X1≠X2.

[0125] The pitch between the electronic device 12K (M1) or the electronic devices 121 (M1) to 12N (M1) in the M1-th row located on the first substrate 100 and the first baseline 110' of the first substrate 100 is ΔX1 = (M1-1) * X1. The pitch between the electronic device 22k (M2) or the electronic devices 221 (M2) to 22Q (M2) in the M2-th row located on the second substrate 200 and the second baseline 210' of the second substrate 200 is ΔX2 = (M2-2) * X2. Therefore, when electronic device 12K (M1) or electronic devices 121 (M1) to 12N (M1) in row M1 of the first electronic device matrix located on the first substrate 100 is transferred to the second substrate 200 to become electronic device 22k (M2) or electronic devices 221 (M2) to 22Q (M2) in column M2 of the second electronic device matrix located on the second substrate 200, the relative movement distance ΔX along the first axis (X-axis) direction is ΔX2-ΔX1, i.e., ΔX=[(M2-2)*X2-(M1-1)*X1].

[0126] In the sixth embodiment, the second electronic matrix located on the second substrate 200 is further transferred to the third substrate 300 to form a third electronic device matrix (not shown) with U rows of electronic devices and V columns of electronic devices on the third substrate 300. The row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively, where U and V are natural numbers greater than 1, and X2, Y2 > 0, X1 ≠ X2, and Y1 ≠ Y2.

[0127] As shown in FIGS. 4D-1 to 4E-1, in this fifth embodiment, a third substrate 300 is provided and disposed below the second substrate 200. The third substrate 300 has a third upper surface 300A and a third lower surface 300B facing each other. The second upper surface 200A of the second substrate 200 faces the third upper surface 300A of the third substrate 300. The second electronic device matrix disposed on the second substrate 200 is transferred to the third substrate 300 to form a third electronic device matrix (not shown) on the third upper surface 300A of the third substrate 300, which has U rows of electronic devices and V columns of electronic devices. The row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively, where U and V are natural numbers greater than 1.

[0128] As shown in FIGS. 4D-1 to 4E-1, the electronic devices in the R1 row located on the second substrate 200 are defined as a third baseline 250' along the first axis (X-axis) direction of the second substrate 200, and the electronic devices in the R2 row located on the third substrate 300 are defined as a fourth baseline 350' along the first axis (X-axis) direction of the third substrate 300. The third baseline 250' is aligned with the fourth baseline 350'. Then, second light having a second wavelength is provided above the second substrate 200. The second light having the second wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. The second light having the second wavelength is irradiated onto the second substrate 200 on which the electronic devices 22(N1)J or the electronic devices 22(N1)1 to 22(N1)P in the M1 row of the second electronic device matrix are located, causing thermal or photolysis and loss of viscosity. An electronic device 22(N1)J or electronic devices 22(N1)1 to 22(N1)P in the N1th row located on the second substrate is selectively peeled off and bonded to the third upper surface 300A of the third substrate 300 to become an electronic device 32(N2)j or electronic devices 32(N2)1 to 32(N2)U in the N2th column of the third electronic device matrix located on the third substrate 300. Here, R1, R2, N1, and N2 are natural numbers, N1≦P, N2≦U, and 1≦R1≦N1, 1≦R2≦N2.

[0129] The pitch ΔY1 between the electronic device 22(N1)J or the electronic devices 22(N1)1 to 22(N1)P in the N1th row located on the second substrate 200 and the third baseline 250' is (N1-R1)*Y1. The pitch ΔY2 between the electronic device 32(N2)j or the electronic devices 32(N2)1 to 32(N2)U in the N2th row located on the third substrate 300 and the fourth baseline 350' is (N2-R2)*Y2. Therefore, when an electronic device 22(N1)J or an electronic device 22(N1)1 to 22(N1)P in row N1 of the second electronic device matrix located on the second substrate is transferred to an electronic device 32(N2)j or an electronic device 32(N2)1 to 32(N2)U in row N2 of the third electronic device matrix located on the third substrate 300, the relative movement distance ΔY along the second axis (Y axis) direction is ΔY2-ΔY1, i.e., ΔY=[(N2-R2)*Y2-(N1-R1)*Y1].

[0130] 4D-1, when R1=1 and R2=2, the electronic devices 2211-221P in the first column located on the second substrate 200 are set to a third baseline 250' along the first axis (X-axis) direction of the second substrate 200, and the electronic devices 3221-322U in the second row located on the third substrate 300 are set to a fourth baseline 350' along the first axis (X-axis) direction of the third substrate 300, and the third baseline 250' is aligned with the fourth baseline 350'. Then, second light having a second wavelength is supplied above the second substrate 200. The second light having the second wavelength is, for example, but not limited to, light having a wavelength of 100 nm to 12,000 nm. Light having a second wavelength is irradiated onto the second substrate 200 on which the electronic devices 22(N1)J or the electronic devices 22(N1)1 to 22(N1)P in the M1 row of the second electronic device matrix are located, causing thermal or photodecomposition to cause loss of viscosity, and selectively peeling off the electronic devices 22(N1)J or the electronic devices 22(N1)1 to 22(N1)P in the N1 row located on the second substrate and bonding them to the third upper surface 300A of the third substrate 300, becoming the electronic devices 32(N2)j or the electronic devices 32(N2)1 to 32(N2)U in the N2 column of the third electronic device matrix located on the third substrate 300. Here, R1, R2, N1, and N2 are natural numbers, and N1≦P and N2≦U.

[0131] The pitch ΔY1 between the electronic device 22(N1)J or the electronic devices 22(N1)1 to 22(N1)P in the N1th row located on the second substrate 200 and the third baseline 250' is (N1-1)*Y1. The pitch ΔY2 between the electronic device 32(N2)j or the electronic devices 32(N2)1 to 32(N2)U in the N2th row located on the third substrate 300 and the fourth baseline 350' is (N2-2)*Y2. Therefore, when an electronic device 22(N1)J or electronic devices 22(N1)1 to 22(N1)P in row N1 of the second electronic device matrix located on the second substrate 200 is transferred to an electronic device 32(N2)j or electronic devices 32(N2)1 to 32(N2)U in row N2 of the third electronic device matrix located on the third substrate 300, the relative movement distance ΔY along the second axis (Y axis) direction is ΔY2-ΔY1, i.e., ΔY=[(N2-2)*Y2-(N1-1)*Y1].

[0132] 4E-1, after the electronic devices 2211 to 2212QP located on the second substrate 200 are selectively peeled off and bonded to the third upper surface 300A of the third substrate 300, a third electronic device matrix (not shown) can be formed on the third substrate 300. The row pitch and column pitch of the third electronic device matrix (not shown) are X2 and Y2, respectively.

[0133] Although the present invention has been disclosed as above in the embodiments, it is not used to limit the present invention, and anyone skilled in the art can make various modifications and improvements without departing from the spirit and scope of the present invention. The protection scope of the present invention is in accordance with that defined by the following claims. [Explanation of symbols]

[0134] 10 Temporary board 10A 1st top surface 10B 1st bottom surface 12 Electronic Devices 20 Target board 20A 2nd top surface 20B 2nd bottom 100 1st base plate 100A 1st top 100B 1st bottom 110, 110' No. 1 ベースライン 1211~121J、121M、1221~122J、122M、12K1~12KJ、12KM、12N1~12NJ、12NM、12(N1)1~12(N1)J、12(N1)M、121(M1)~12N(M1)、121(M1)~12K(M1)、12N(M1) Electronic Debit 2211~221(j), 221(M2)~22k(M2), 22Q(M2), 221P~22kP, 2221~222(j), 222P, 22(N2)1~22(N2)j, 22(N2)P, 22Q1~22Q(J), 22QP Electronic Debit 3211~321(M2), 321U~32(N2)U, 3221~322(M2), 322U, 32k1~32k(M2), 32kU, 32V1~32V(M2), 3211~321J, 321U, 33221~322j, 322U, 2(N2)1~32(N2)j, 32(N2)U, 32Vj, 32VU Electronic Debit 200 2nd substrate 200A 2nd top 200B 2nd bottom 210, 210' 2nd ベースライン 300 3rd base plate 300A 3rd top 300B 3rd bottom 250, 250' 3rd ベースライン 350, 350' 4th ベースライン

Claims

1. A method for transferring a large number of pitch-adjustable electronic devices, comprising: a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix having M rows of electronic devices and N columns of electronic devices, wherein the first axis direction is substantially perpendicular to the second axis direction, M and N are natural numbers greater than 1, and the row pitch and column pitch of the first electronic device matrix are X1 and Y1, respectively, where X1 and Y1>0; providing a second substrate having opposing second upper and lower surfaces, and disposing the second substrate below the first substrate such that the first upper surface of the first substrate faces the second upper surface of the second substrate; first light having a first wavelength is supplied above the first substrate, and the first substrate and the second substrate are moved relatively (X2-X1), (Y2-Y1) along the first axial direction and the second axial direction, such that the first substrate, on which the electronic devices of the first electronic device matrix are arranged, is irradiated with the first light along the first axial direction, and is thermally or photolytically decomposed, thereby losing its viscosity; or the first substrate, on which the electronic devices of the first electronic device matrix are arranged, is moved relatively (Y2-Y1), (X2-X1) along the first axial direction and the second axial direction, such that the first light is irradiated with the first substrate along the second axial direction, and is thermally or photolytically decomposed, thereby losing its viscosity; Selectively peeling off all or some of the electronic devices located on the first substrate and bonding them to the second upper surface of the second substrate, forming a second electronic device matrix on the second upper surface of the second substrate, wherein the row pitch and column pitch of the second electronic device matrix are X2 and Y2, respectively, where X2, Y2>0, and X1≠X2 and Y1≠Y2. A method for transferring a large amount of electronic devices with adjustable pitch including steps.

2. The step of forming the second electronic device matrix includes: irradiating the first substrate on which electronic devices in the Jth row and the Kth column of the first electronic device matrix are located with first light having a first wavelength, thereby causing thermal or photolysis to cause the electronic devices to lose viscosity, and selectively peeling off the electronic devices in the Jth row and the Kth column and bonding them to a second upper surface of the second substrate; displacing the first substrate relative to the second substrate by a distance of (X2-X1) along the first axis direction; irradiating the first substrate on which electronic devices in the (J+1)th row and the Kth column of the first electronic device matrix are located with first light having a first wavelength, thereby causing the electronic devices to lose viscosity, and selectively peeling off the electronic devices in the (J+1)th row and the Kth column and bonding them to a second upper surface of the second substrate, wherein J, K, and X2 are all natural numbers, and 1≦J≦(M-1), 1≦K≦(N-1); After all or some of the electronic devices in the K-th column of the first electronic device matrix are selectively peeled off and bonded to the second upper surface of the second substrate, the first substrate is first realigned with the second substrate, and then the first substrate is displaced relative to the second substrate along the second axis by a distance of (Y2-Y1). A first light having a first wavelength is irradiated onto the first substrate on which the electronic device in the J-th row, (K+1)-th column of the first electronic device matrix is ​​located, causing thermal or photodecomposition to cause the electronic device to lose viscosity, and the electronic device in the J-th row, (K+1)-th column of the first electronic device matrix is ​​bonded to the second upper surface of the second substrate. selectively peeling off the electronic devices in the first substrate and bonding them to a second upper surface of the second substrate; displacing the first substrate by a distance of (X2-X1) along the first axis direction relative to the second substrate; irradiating the first substrate on which the electronic devices in the (J+1)th row and the (K+1)th column of the first electronic device matrix are located with first light having a first wavelength to thermally or photolytically decompose the electronic devices and lose viscosity; selectively peeling off the electronic devices in the (J+1)th row and the (K+1)th column and bonding them to the second upper surface of the second substrate, wherein Y2 is a natural number; Here, all or some of the electronic devices located on the first substrate may be selectively peeled off and bonded to the second upper surface of the second substrate, and then the second electronic device matrix may be formed on the second upper surface of the second substrate.

2. The method for transferring a large number of pitch-adjustable electronic devices according to claim 1, comprising the steps of:

3. forming the second electronic device matrix; irradiating the first substrate on which the electronic devices in the Jth row and the Kth column of the first electronic device matrix are located with first light having a first wavelength, causing thermal or photolysis to cause the electronic devices to lose viscosity, and selectively detach the electronic devices in the Jth row and the Kth column to bond to a second upper surface of the second substrate; displacing the first substrate by a distance of (Y2-Y1) along the second axis direction relative to the second substrate; irradiating the first substrate on which the electronic devices in the Jth row and the (K+1)th column of the first electronic device matrix are located with first light having a first wavelength, causing the electronic devices to lose viscosity, and selectively detach the electronic devices in the Jth row and the (K+1)th column to bond to a second upper surface of the second substrate, wherein J, K, and Y2 are all natural numbers, and 1≦J≦(M-1), 1≦K≦(N-1); After all or some of the electronic devices in the Jth row of the first electronic device matrix are selectively peeled off and bonded to the second upper surface of the second substrate, the first substrate is first realigned with the second substrate, and then the first substrate is displaced relative to the second substrate along the first axis direction by a distance of (X2-X1). A first light having a first wavelength is irradiated onto the first substrate on which the electronic devices in the (J+1)th row, Kth column of the first electronic device matrix are located, causing thermal or photodecomposition to cause the electronic devices to lose viscosity, thereby forming a first light having a first wavelength on the first substrate. selectively peeling off the electronic devices in the first substrate and bonding them to the second upper surface of the second substrate; displacing the first substrate by a distance of (Y2-Y1) along a second axis direction relative to the second substrate; irradiating the first substrate on which the electronic devices in the (J+1)th row and the (K+1)th column of the first electronic device matrix are located with first light of a first wavelength to thermally or photolytically decompose or photodecompose the electronic devices to lose viscosity; and selectively peeling off the electronic devices in the (J+1)th row and the (K+1)th column and bonding them to the second upper surface of the second substrate, wherein X2 is a natural number; Here, all or some of the electronic devices on the first substrate may be selectively peeled off and bonded to the second upper surface of the second substrate, and then the second electronic device matrix may be formed on the second upper surface of the second substrate.

2. The method for transferring a large number of pitch-adjustable electronic devices according to claim 1, comprising:

4. 2. The method for transferring a large number of pitch-adjustable electronic devices according to claim 1, wherein the first substrate is a pyrolytic rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12,000 nm.

5. 2. The method for transferring a large number of pitch-adjustable electronic devices according to claim 1, wherein the first substrate is a photodegradable rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12,000 nm.

6. 2. The method for transferring a large number of pitch-adjustable electronic devices according to claim 1, wherein the electronic devices are selected from one or more of the group consisting of light-emitting diodes, laser diodes, and semiconductor elements.

7. 7. The method for transferring a large number of pitch-adjustable electronic devices according to claim 6, wherein the light emitted by the light-emitting diodes is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light.

8. 7. The pitch-adjustable mass electronic device transfer method according to claim 6, wherein the wavelength of the laser diode is 390 nm to 1700 nm.

9. 7. The method for transferring a large number of pitch-adjustable electronic devices according to claim 6, wherein the semiconductor elements are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

10. A method for transferring a large number of pitch-adjustable electronic devices, comprising: a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix having M rows of electronic devices and N columns of electronic devices, the first axis direction being substantially perpendicular to the second axis direction, M and N being natural numbers greater than 1, a row pitch and a column pitch of the first electronic device matrix being X1 and Y1, respectively, and X1, Y1>0; providing a second substrate having opposing second upper and lower surfaces, and disposing the second substrate below the first substrate such that the first upper surface of the first substrate faces the second upper surface of the second substrate; a first light having a first wavelength is supplied above the first substrate, and the first substrate and the second substrate are moved relative to each other along the first axis (X2-X1), such that the first substrate, on which the electronic devices of the first electronic device matrix are disposed, is irradiated with the first light along the first axis, thereby thermally or photolytically decomposing and losing its viscosity; or the first substrate and the second substrate are moved relative to each other along the second axis (Y2-Y1), such that the first substrate, on which the electronic devices of the first electronic device matrix are disposed, is irradiated with the first light along the second axis, thereby thermally or photolytically decomposing and losing its viscosity, selectively peeling off all or some of the electronic devices disposed on the first substrate and bonding them to a second upper surface of the second substrate, thereby forming a second electronic device matrix on the second substrate, wherein the row pitch and column pitch of the second electronic device matrix are X1, Y2 or X2, Y1, respectively, where X2, Y2>0 and X1≠X2 and Y1≠Y2; A method for transferring a large amount of electronic devices with adjustable pitch, including steps.

11. The row pitch and column pitch of the second electronic device matrix are X1 and Y2, respectively, and the step of forming the second electronic device matrix includes: irradiating the first substrate on which the electronic devices in the Kth column of the first electronic device matrix are located with first light having a first wavelength to cause thermal or photodecomposition to cause the electronic devices to lose viscosity, thereby peeling off all of the electronic devices in the Kth column and bonding them to the second upper surface of the second substrate; the first substrate is displaced relative to the second substrate by a distance (Y2-Y1) along a second axis direction; and a first light having a first wavelength is irradiated onto the first substrate on which the electronic devices in the (K+1)th column of the first electronic device matrix are located, to cause thermal or photodecomposition to cause the electronic devices to lose viscosity, and to peel off all or part of the electronic devices in the (K+1)th column and bond them to a second upper surface of the second substrate, where K is a natural number and 1≦K≦(N-1); Here, all or some of the electronic devices on the first substrate may be selectively peeled off and bonded to the second upper surface of the second substrate, and then the second electronic device matrix may be formed on the second substrate.

11. The method for transferring a large number of pitch-adjustable electronic devices according to claim 10, comprising:

12. providing a third substrate having opposing third upper and lower surfaces, and disposing the third substrate below the second substrate such that the second upper surface of the second substrate faces the third upper surface of the third substrate; Transferring all or some of the electronic devices located on the second substrate to a third substrate to form a third electronic device matrix on the third substrate, wherein the row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively; 12. The method for transferring a large number of pitch-adjustable electronic devices according to claim 11, further comprising the steps of:

13. forming the third electronic device matrix; providing second light having a second wavelength above the second substrate, and irradiating the second substrate on which the electronic devices in row J of the second electronic device matrix are located with the second light having the second wavelength, thereby thermally or photolytically decomposing the second substrate and causing it to lose viscosity, and peeling off all or part of the electronic devices in row J and bonding them to the third upper surface of the third substrate; the second substrate is displaced relative to the third substrate by a distance of (X2-X1) along a first axis direction, and a second light having a second wavelength is irradiated onto the second substrate on which electronic devices in the (J+1)th row of the second electronic device matrix are located, thereby thermally or photolytically decomposing the second substrate to lose viscosity, and peeling off all or part of the electronic devices in the (J+1)th row and bonding them to a third upper surface of the third substrate, where J is a natural number and 1≦J≦(M-1); Here, all or some of the electronic devices on the second substrate may be selectively peeled off and bonded to a third upper surface of the third substrate, and then a third electronic device matrix may be formed on the third substrate.

13. The method for transferring a large number of pitch-adjustable electronic devices according to claim 12, comprising:

14. The row pitch and column pitch of the second electronic device matrix are X2 and Y1, respectively, and the step of forming the second electronic device matrix includes: irradiating the first substrate on which the electronic devices in the Jth row of the first electronic device matrix are located with first light having a first wavelength to cause thermal or photodecomposition to cause the electronic devices to lose viscosity, thereby peeling off all or part of the electronic devices in the Jth row and bonding them to the second upper surface of the second substrate; the first substrate is displaced relative to the second substrate by a distance of (X2-X1) along a first axis direction; and a first light having a first wavelength is irradiated onto the first substrate on which electronic devices in the (J+1)th row of the first electronic device matrix are located, to cause thermal or photodecomposition to lose viscosity, and to peel off all or part of the electronic devices in the (J+1)th row and bond them to a second upper surface of the second substrate, where J is a natural number and 1≦J≦(M-1); Here, all or some of the electronic devices on the first substrate may be selectively peeled off and bonded to the second upper surface of the second substrate, and then the second electronic device matrix may be formed on the second substrate.

11. The method for transferring a large number of pitch-adjustable electronic devices according to claim 10, comprising:

15. providing a third substrate having opposing third upper and lower surfaces, and disposing the third substrate below the second substrate such that the second upper surface of the second substrate faces the third upper surface of the third substrate; Transferring all or some of the electronic devices located on the second substrate to the third substrate to form a third electronic device matrix on the third substrate, wherein the row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively; 15. The method for transferring a large number of pitch-adjustable electronic devices according to claim 14, further comprising the steps of:

16. forming the third electronic device matrix; providing second light having a second wavelength above the second substrate, and irradiating the second substrate on which the electronic devices in the Kth column of the second electronic device matrix are located with the second light having the second wavelength, thereby thermally or photolytically decomposing the second substrate and causing it to lose viscosity, and peeling off all or part of the electronic devices in the Jth row and bonding them to the third upper surface of the third substrate; the second substrate is displaced relative to the third substrate by a distance (Y2-Y1) along a second axis direction, and a second light having a second wavelength is irradiated onto the second substrate on which the electronic devices in the (K+1)th column of the second electronic device matrix are located, thereby thermally or photolytically decomposing the second substrate to lose viscosity, and peeling off all or part of the electronic devices in the (K+1)th column and bonding them to a third upper surface of the third substrate, where K is a natural number and 1≦K≦(N-1); Here, all or some of the electronic devices on the second substrate may be selectively peeled off and bonded to a third upper surface of the third substrate, and then a third electronic device matrix may be formed on the third substrate.

16. The method for transferring a large number of pitch-adjustable electronic devices according to claim 15, comprising:

17. 11. The method for transferring a large number of pitch-adjustable electronic devices according to claim 10, wherein the first substrate is a pyrolytic rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12,000 nm.

18. 11. The method for transferring a large number of pitch-adjustable electronic devices according to claim 10, wherein the first substrate is a photodegradable rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12000 nm.

19. 17. The method for transferring a large number of pitch-adjustable electronic devices according to claim 13 or 16, wherein the second substrate is a pyrolytic rubber film, and the second light having the second wavelength is light having a wavelength of 100 nm to 12000 nm.

20. 17. The method for transferring a large number of pitch-adjustable electronic devices according to claim 13 or 16, wherein the second substrate is a photodegradable rubber film, and the second light having the second wavelength is light having a wavelength of 100 nm to 12000 nm.

21. The pitch-tunable bulk transfer electronic device method of claim 10 , wherein the electronic device is selected from one or more of the group consisting of a light-emitting diode, a laser diode, and a semiconductor device.

22. 22. The method for transferring a large number of pitch-adjustable electronic devices according to claim 21, wherein the light emitted by the light-emitting diodes is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light.

23. 22. The pitch-adjustable mass electronic device transfer method according to claim 21, wherein the wavelength of the laser diode is 390 nm to 1700 nm.

24. 22. The method for transferring a large number of pitch-adjustable electronic devices according to claim 21, wherein the semiconductor elements are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

25. A method for transferring a large number of pitch-adjustable electronic devices, comprising: a first substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface of the first substrate having a plurality of electronic devices arranged along a first axis direction and a second axis direction, respectively, to form a first electronic device matrix having M rows of electronic devices and N columns of electronic devices, wherein the first axis direction is substantially perpendicular to the second axis direction, M and N are natural numbers greater than 1, and the row pitch and column pitch of the first electronic device matrix are X1 and Y1, respectively, where X1 and Y1>0; providing a second substrate having opposing second upper and lower surfaces, and disposing the second substrate below the first substrate such that the first upper surface of the first substrate faces the second upper surface of the second substrate; First light having a first wavelength is supplied above the first substrate, and the first substrate and the second substrate are moved relative to each other along the first axis, so that the first substrate on which the electronic devices of the first electronic device matrix are arranged is irradiated with the first light along the first axis, and the first substrate loses its viscosity by being thermally or photolyzed, or the first substrate and the second substrate are moved relative to each other along the second axis, so that the first light irradiates the first substrate on which the electronic devices of the first electronic device matrix are arranged, and the first substrate loses its viscosity by being thermally or photolyzed, or and the second electronic device matrix is ​​irradiated along the direction of the second substrate, and is thermally or photolytically decomposed to lose viscosity, thereby peeling off the electronic devices located on the first substrate and bonding them to the second upper surface of the second substrate, thereby forming a second electronic device matrix on the second upper surface of the second substrate, the second electronic device matrix having P rows of electronic devices and Q columns of electronic devices, where P and Q are natural numbers greater than 1, P≠M and / or Q≠N, the second electronic device matrix has a row pitch of X2 or a column pitch of Y2, where X2, Y2>0, X1≠X2, Y1≠Y2, and P×Q≦M×N. A method for transferring a large amount of electronic devices with adjustable pitch, including steps.

26. The column pitch of the second electronic device matrix is ​​Y2, Y2>0, and the step of forming the second electronic device matrix includes: a first baseline along a first axis of the first substrate for the electronic devices in an R1 row located on the first substrate, a second baseline along a first axis of the second substrate for the electronic devices in an R2 row located on the second substrate, and aligning the first baseline with the second baseline; irradiating the first substrate on which the electronic devices in the N1 column of the first electronic device matrix are located with first light having a first wavelength to thermally or photolytically decompose or photodecompose the electronic devices to lose viscosity, thereby selectively peeling the electronic devices in the N1 column of the first substrate and bonding them to the second upper surface of the second substrate, and positioning them in the N2 column of the second electronic device matrix, wherein R1, R2, N1, and N2 are natural numbers, N1≦N, N2≦Q, and 1≦R1≦N1, 1≦R2≦N2; After the electronic devices in the N1 column of the first electronic device matrix located on the first substrate are transferred to the N2 column of the second electronic device matrix on the second substrate, the relative movement distance along the second axis is [(N2-R2)*Y2-(N1-R1)*Y1].

26. The method for transferring a large number of pitch-adjustable electronic devices according to claim 25, comprising:

27. providing a third substrate having opposing third upper and lower surfaces, and disposing the third substrate below the second substrate such that the second upper surface of the second substrate faces the third upper surface of the third substrate; transferring the second electronic device matrix located on the second substrate to the third substrate to form a third electronic device matrix having U rows of electronic devices and V columns of electronic devices on the third substrate, where U and V are natural numbers greater than 1, and the row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively; 27. The method for transferring a large number of pitch-adjustable electronic devices according to claim 26, further comprising the steps of:

28. forming the third electronic device matrix; a third baseline along the second axis of the second substrate for the electronic devices in the S1 row, and a fourth baseline along the second axis of the third substrate for the electronic devices in the S2 row, and the third baseline is aligned with the fourth baseline; providing second light having a second wavelength above the second substrate, and irradiating the second substrate on which the electronic devices in row M1 of the second electronic device matrix are located with the second light to cause thermal or photodecomposition to lose viscosity, thereby selectively peeling the electronic devices in row M1 located on the second substrate and bonding them to a third upper surface of the third substrate, and positioning them in column M2 of the third electronic device matrix, wherein S1, S2, M1, and M2 are natural numbers, M1≦M, M2≦U, and 1≦S1≦M1, 1≦S2≦M2; wherein, after the electronic devices in the M1 row of the second electronic device matrix located on the second substrate are transferred to the M2 row of the third electronic device matrix on the third substrate, the relative movement distance along the first axis direction is [(M2-S2)*X2-(M1-S1)*X1].

28. The method for transferring a large number of pitch-adjustable electronic devices of claim 27, comprising:

29. The second electronic device matrix has a row pitch of X2, and the step of forming the second electronic device matrix includes: electronic devices in a row S1 located on the first substrate are aligned with a first baseline along a second axis of the first substrate, electronic devices in a row S2 located on the second substrate are aligned with a second baseline along the second axis of the second substrate, and the first baseline is aligned with the second baseline; irradiating the first substrate on which the electronic devices in row M1 of the first electronic device matrix are located with first light having a first wavelength to cause thermal or photodecomposition to lose viscosity, thereby selectively peeling off the electronic devices in row M1 located on the first substrate and bonding them to a second upper surface of the second substrate to be located in column M2 of the second electronic device matrix, wherein S1, S2, M1, and M2 are natural numbers, M1≦M, M2≦P, and 1≦S1≦M1, 1≦S2≦M2; wherein, after the electronic devices in the M1 row of the first electronic device matrix located on the first substrate are transferred to the M2 row of the second electronic device matrix on the second substrate, the relative movement distance along the first axis direction is [(M2-S2)*X2-(M1-S1)*X1].

26. The method for transferring a large number of pitch-adjustable electronic devices according to claim 25, comprising:

30. providing a third substrate having opposing third upper and lower surfaces, and disposing the third substrate below the second substrate such that the second upper surface of the second substrate faces the third upper surface of the third substrate; transferring the second electronic device matrix located on the second substrate to the third substrate to form a third electronic device matrix having U rows of electronic devices and V columns of electronic devices on the third substrate, where U and V are natural numbers greater than 1, and the row pitch and column pitch of the third electronic device matrix are X2 and Y2, respectively; 30. The method for transferring a large number of pitch-adjustable electronic devices according to claim 29, further comprising the steps of:

31. forming the third electronic device matrix; a third baseline along a first axis of the second substrate for the electronic devices in the R1 row located on the second substrate, a fourth baseline along a first axis of the third substrate for the electronic devices in the R2 row located on the third substrate, and aligning the third baseline with the fourth baseline; providing second light having a second wavelength above the second substrate, and irradiating the second substrate on which the electronic devices in the N1 column of the second electronic device matrix are located with the second light to cause thermal or photodecomposition to lose viscosity, thereby selectively peeling off the electronic devices in the N1 column located on the second substrate and bonding them to a third upper surface of the third substrate to be located in the N2 column of the third electronic device matrix, wherein R1, R2, N1, and N2 are natural numbers, N1≦N, N2≦V, and 1≦R1≦N1, 1≦R2≦N2; wherein, after the electronic devices in the N1th row of the second electronic device matrix located on the second substrate are transferred to the N2th row of the third electronic device matrix on the third substrate, the relative movement distance along the second axis is [(N2-R2)*Y2-(N1-R1)*Y1]; 31. The method for transferring a large number of pitch-adjustable electronic devices of claim 30, comprising:

32. 26. The method for transferring a large number of pitch-adjustable electronic devices according to claim 25, wherein the first substrate is a pyrolytic rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12,000 nm.

33. 26. The method for transferring a large number of pitch-adjustable electronic devices according to claim 25, wherein the first substrate is a photodegradable rubber film, and the first light having a first wavelength is light having a wavelength of 100 nm to 12,000 nm.

34. 32. The method for transferring a large number of pitch-adjustable electronic devices according to claim 28 or 31, wherein the second substrate is a pyrolytic rubber film, and the second light having a second wavelength is light having a wavelength of 100 nm to 12000 nm.

35. 32. The method for transferring a large number of pitch-adjustable electronic devices according to claim 28 or 31, wherein the second substrate is a photodegradable rubber film, and the second light having a second wavelength is light having a wavelength of 100 nm to 12,000 nm.

36. 26. The method for transferring a large number of pitch-adjustable electronic devices according to claim 25, wherein the electronic devices are selected from one or more of the group consisting of light-emitting diodes, laser diodes, and semiconductor elements.

37. 37. The method for transferring a large number of pitch-adjustable electronic devices according to claim 36, wherein the light emitted by the light-emitting diodes is red light, green light, blue light, yellow light, white light, infrared light or ultraviolet light.

38. 37. The pitch-adjustable mass electronic device transfer method according to claim 36, wherein the wavelength of the laser diode is 390 nm to 1700 nm.

39. 37. The method for transferring a large number of pitch-adjustable electronic devices according to claim 36, wherein the semiconductor devices are selected from one or more of the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

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