adhesive tape

Abstract

To provide an adhesive tape which can be peeled off with an excellent peeling performance while surely suppressing and preventing occurrence of an adhesive deposit in a component when the adhesive tape is peeled off from the component which was divided into individual pieces after the divided component is obtained by cutting a substrate to a thickness direction in a state where the substrate is adhered to the adhesive tape.SOLUTION: An adhesive tape 100 comprises: a base material 4; and an adhesive layer 2 laminated on one surface of the base material 4 of a substrate. At least one of the substrate and a component is temporally fixed and is used. The adhesive layer 2 contains: a base resin having an adhesive performance; and a hardening resin that hardens itself by applying an energy. By applying the energy, adhesive force against the substrate and the component, laminated onto the adhesive layer 2 is reduced. When viewing the adhesive tape 100 in a plan view, an area of an air bubble formed on a boundary surface between the base material 4 and the adhesive layer 2 becomes 100 μm2 or larger, and the number of areas is 15.0 / mm2 or less.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to an adhesive tape used for temporarily fixing a substrate and a component. [Background technology]

[0002] In response to the recent trend toward more sophisticated electronic devices and the expansion of mobile applications, there is a growing demand for higher density and integration of semiconductor devices, and IC packages are becoming larger in capacity and higher in density.

[0003] For example, a method for manufacturing these semiconductor devices involves first applying adhesive tape to a semiconductor substrate (semiconductor wafer) as a substrate, and then dicing the semiconductor substrate in the thickness direction using a dicing saw while fixing the periphery of the semiconductor substrate with a wafer ring. This results in the semiconductor substrate being cut into individual semiconductor elements (semiconductor chips). This is followed by an expanding process in which the adhesive tape is radially stretched using a wafer ring to form gaps between adjacent semiconductor elements. This is followed by a pick-up process in which the singulated semiconductor elements are picked up while being pushed up using a needle. The picked-up semiconductor elements are then transferred to a mounting process in which they are mounted on a metal lead frame or substrate (e.g., a tape substrate, an organic hard substrate, etc.). In the mounting process, the picked-up semiconductor elements are bonded to a lead frame or substrate, for example, via an underfill material. The semiconductor elements are then encapsulated on the lead frame or substrate with a sealing portion, thereby producing a semiconductor device.

[0004] In recent years, various studies have been conducted on adhesive tapes (dicing tapes) used in the manufacture of such semiconductor devices (see, for example, Patent Document 1).

[0005] This adhesive tape generally has a substrate (film substrate) and an adhesive layer formed on the substrate, and the semiconductor substrate is fixed by the adhesive layer. Furthermore, the adhesive layer is usually composed of a resin composition containing an adhesive base resin and a photocurable resin, etc., so that the semiconductor element can be picked up after the semiconductor substrate dicing process. That is, when energy is applied to the adhesive layer after the dicing process, the resin composition hardens, reducing the adhesiveness of the adhesive layer. Therefore, when the semiconductor element is pushed up with a needle in the pick-up process, the adhesive tape can be peeled off from the semiconductor element, thereby enabling the semiconductor element to be picked up.

[0006] In the manufacturing method of a semiconductor device using this adhesive tape, in the pick-up process in which the adhesive tape is peeled off from the semiconductor element, it is necessary to pick up the semiconductor element without leaving any adhesive residue, whereby part of the adhesive tape remains on the semiconductor element.However, the reality is that there is a need to develop an adhesive tape that accurately suppresses the occurrence of this adhesive residue.

[0007] Furthermore, the development of such adhesive tapes is not limited to adhesive tapes used when obtaining semiconductor elements as components by cutting semiconductor substrates (semiconductor wafers) as substrates in the thickness direction, but is also required for adhesive tapes used when cutting (dicing) various substrates such as glass substrates, ceramic substrates, resin material substrates, and metal material substrates in the thickness direction to obtain individualized components. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-245989 Summary of the Invention [Problem to be solved by the invention]

[0009] An object of the present invention is to provide an adhesive tape that can be peeled off with excellent peeling properties by accurately suppressing or preventing adhesive residue from being left on the components when the adhesive tape is peeled off from the individual components after the substrate is attached to the adhesive tape and the substrate is cut in the thickness direction to obtain individual components. [Means for solving the problem]

[0010] Such objectives are as follows: (1) 9 This is achieved by the present invention described in (1) An adhesive tape that is configured from a laminate including a base material containing a resin material and an adhesive layer laminated on one surface of the base material, and is used to temporarily fix at least one of a substrate and a component, the adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by the application of energy, and the application of energy reduces adhesive strength to the substrate and components stacked on the adhesive layer; The substrate has a surface on the adhesive layer side, and the average length Sm of the roughness curve element, which is a parameter representing the surface roughness defined in JIS B 0601 (2013), is 100 μm or less; When the adhesive tape is viewed in a plan view, bubbles formed at the interface between the substrate and the adhesive layer have an area of ​​100 μm 2 The number of the above is 15.0 pieces / mm 2 An adhesive tape characterized by:

[0011] (2) When the adhesive tape is viewed in a plan view, the area occupied by the air bubbles is 0.01 mm 2 / 1.0mm 2 The adhesive tape according to (1) above, which is:

[0013] ( 3 The substrate has a surface on the adhesive layer side thereof, and the arithmetic mean roughness Ra, which is a parameter representing the surface roughness defined in JIS B 0601 (2013), is 1.0 μm or less. or (2) The adhesive tape according to claim 1.

[0014] ( 4The resin material is a polyolefin resin as described in (1) to ( 3 ) The adhesive tape according to any one of the preceding claims.

[0015] ( 5 The adhesive layer has an elastic modulus of 1.0×10 at 30° C. before the application of energy. 4 Pa or more 1.0×10 6 P (1) or (2) above, which is less than a 4 ) The adhesive tape according to any one of the preceding claims.

[0016] ( 6 ) The adhesive tape is used when a substrate is fixed on the adhesive layer, the substrate is cut from the substrate to the middle of the thickness direction of the base material, the substrate is divided into individual pieces to form a plurality of parts, and then the adhesive tape is stretched in the surface direction, and the parts are pushed up from the base material side, and pulled out from the opposite side of the base material, to separate them from the adhesive layer. 5 ) The adhesive tape according to any one of the preceding claims.

[0017] ( 7 ) The adhesive tape satisfies the following requirement A. 6 ) The adhesive tape according to any one of the preceding claims. Requirement A: A silicon substrate (6 inches in diameter, 500 μm thick, #2000 polished) is fixed to the adhesive tape, and then, using a 30 μm thick blade, the silicon substrate is cut in the thickness direction until it reaches the middle of the base material, thereby obtaining silicon chips measuring 6 mm in length and 6 mm in width. After that, ultraviolet intensity: 55 mW / cm 2 , Irradiation intensity: 200mJ / cm 2 The adhesive layer is irradiated with ultraviolet light of 1.0% or less, and then the substrate is stretched in the surface direction of the substrate to 102% of its original size, and a needle is pushed up 1.5 mm from the surface of the substrate opposite the adhesive layer. When the silicon chip is picked up using a vacuum collet and peeled off from the adhesive tape, the adhesive residue rate on the back surface of the silicon chip is 1.0% or less.

[0018] ( 8 The adhesive layer has a thickness of 5 μm or more and 50 μm or less. 7 ) The adhesive tape according to any one of the preceding claims.

[0019] ( 9 The substrate has a thickness of 30 μm or more and 150 μm or less. 8 ) The adhesive tape according to any one of the preceding claims. [Effects of the Invention]

[0020] According to the present invention, when the adhesive tape is viewed in plan view, the area of ​​the bubbles formed at the interface between the substrate and the adhesive layer is 100 μm 2 The number of the above is 15.0 / mm 2 Therefore, when a substrate is attached to the adhesive tape, the substrate is cut in the thickness direction to obtain individual components, and then the adhesive tape is peeled off from the individual components, the adhesive tape can be peeled off with excellent peelability, while accurately suppressing or preventing adhesive residue from being left on the components. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. [Figure 2] FIG. 2 is a vertical cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the pressure-sensitive adhesive tape of the present invention. [Figure 3] FIG. 2 is a vertical cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. 1 using the pressure-sensitive adhesive tape of the present invention. [Figure 4] 1 is a longitudinal cross-sectional view showing an embodiment of a pressure-sensitive adhesive tape. [Figure 5] 5 is a vertical cross-sectional view illustrating a method for producing the pressure-sensitive adhesive tape shown in FIG. 4. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0022] The pressure-sensitive adhesive tape of the present invention will be described in detail below. First, before describing the pressure-sensitive adhesive tape of the present invention, a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention will be described.

[0023] <Semiconductor device> 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention. In the following description, the upper side in FIG. 1 will be referred to as "top" and the lower side as "bottom."

[0024] The semiconductor device 10 shown in Figure 1 has a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, a plurality of conductive bumps (terminals) 70, and a molded portion (sealing portion) 17 that seals the semiconductor chip 20.

[0025] The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin), etc. The planar shape of the interposer 30 is usually a quadrangle such as a square or rectangle.

[0026] On the upper surface (one surface) of the interposer 30, terminals 41 made of a conductive metal material such as copper are provided in a predetermined shape.

[0027] Furthermore, a plurality of vias (through holes) (not shown) are formed in the interposer 30 so as to penetrate through the interposer 30 in the thickness direction.

[0028] Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 through a respective via, and the other end (lower end) protrudes from the lower surface (other surface) of the interposer 30.

[0029] The portion of the bump 70 that protrudes from the interposer 30 is substantially spherical (ball-shaped).

[0030] The bumps 70 are mainly made of a brazing material such as solder, silver brazing, copper brazing, or phosphorus copper brazing.

[0031] Furthermore, terminals 41 are formed on the interposer 30. Terminals 21 of the semiconductor chip 20 are electrically connected to the terminals 41 via connecting portions 81.

[0032] In this embodiment, as shown in FIG. 1, the terminals 21 are configured to protrude from the surface formed on the semiconductor chip 20, and the terminals 41 are also configured to protrude from the interposer 30.

[0033] The gap between the semiconductor chip 20 and the interposer 30 is filled with an underfill material made of various resin materials, and the hardened underfill material forms a sealing layer 80. This sealing layer 80 has the function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and the function of preventing the intrusion of foreign matter, moisture, etc. into the gap.

[0034] Furthermore, on the upper side of the interposer 30, a molded portion 17 formed to cover the semiconductor chip 20 and the interposer 30 is made of a hardened semiconductor sealing material (sealant), thereby sealing the semiconductor chip 20 within the semiconductor device 10 and preventing the intrusion of foreign matter, moisture, etc. into the semiconductor chip 20.

[0035] 3, the semiconductor chip 20 (semiconductor element) has a semiconductor chip body 23 (semiconductor element body) and terminals 21 protruding from the lower surface of the semiconductor chip body 23. A circuit (not shown) is built into the upper surface of the semiconductor chip body 23, and the semiconductor chip body 23 is mainly made of a semiconductor material such as Si, SiC, GaN, or Ga2O3.

[0036] The semiconductor device 10 and the semiconductor chip 20 having such a configuration are manufactured as follows by, for example, a method for manufacturing a semiconductor device using an adhesive tape.

[0037] <Method of manufacturing a semiconductor device> 2 and 3 are longitudinal cross-sectional views illustrating a method for manufacturing the semiconductor device shown in Fig. 1 using the pressure-sensitive adhesive tape of the present invention. In the following description, the upper side in Fig. 2 and Fig. 3 will be referred to as "upper" and the lower side will be referred to as "lower."

[0038] [1A] First, prepare an adhesive tape 100 (hereinafter, sometimes simply referred to as "adhesive tape 100") composed of a laminate having a base material 4 and an adhesive layer 2 laminated on the upper surface of the base material 4, and then, as shown in Figure 2(a), place this adhesive tape 100 on a dicer table 200. The adhesive tape 100 will be described in detail later.

[0039] [2A] Next, as shown in FIG. 2(b), a semiconductor substrate 7 (semiconductor wafer) is placed on the adhesive layer 2 at the center 122 and lightly pressed to laminate (attach) the semiconductor substrate 7 (attaching step).

[0040] This semiconductor substrate 7 has circuits formed in advance on its upper surface, which will be included in semiconductor chips 20 (semiconductor chip main body portions 23) formed by dicing, and terminals 21 formed in advance on its lower surface, and the semiconductor substrate 7 is attached to the adhesive tape 100 with the upper surface on which the circuits are formed facing the adhesive layer 2. Therefore, the upper surface of the semiconductor substrate 7 on which the circuits are formed, i.e., the uneven surface on which the unevenness is formed, is joined to the adhesive layer 2.

[0041] In the above step [1A] and this step [2A], the semiconductor substrate 7 may be attached to the adhesive tape 100 in advance, and then placed on the dicer table 200.

[0042] [3A] Next, the outer peripheral portion 121 of the adhesive layer 2 is fixed with a wafer ring 9, and then the semiconductor substrate 7 as a substrate is cut (diced) using a dicing saw (blade) not shown to separate the semiconductor substrate 7, thereby obtaining semiconductor chips 20 as components on the adhesive tape 100 (singulation process; see Figure 2(c)).

[0043] At this time, the adhesive tape 100 has a buffering effect and prevents cracks, chips, etc. from occurring when the semiconductor substrate 7 is cut.

[0044] 2(c), the cutting of the semiconductor substrate 7 using the blade is performed so as to reach partway through the thickness direction of the base material 4. This ensures that the semiconductor substrate is divided into individual pieces.

[0045] At this time, the semiconductor substrate 7 is cut while cutting water is supplied to the semiconductor substrate 7 in order to prevent the scattering of dust generated when the semiconductor substrate 7 is cut and to prevent the semiconductor substrate 7 from being unnecessarily heated.

[0046] [4A] Next, while maintaining the fixation of the outer periphery 121 of the adhesive layer 2 by the wafer ring 9, the center 210 is pushed upward against the outer periphery 220 of the dicer table 200, thereby radially stretching the adhesive tape 100, thereby forming gaps with a fixed distance between the individual semiconductor substrates 7, i.e., the semiconductor chips 20 as components (expanding step; see FIG. 2(d)). Then, with these gaps formed, the semiconductor chips 20 are picked up by suction with a vacuum collet or air tweezers (pick-up step; see FIG. 2(e)).

[0047] This pickup of the semiconductor chip 20 is performed after the expanding step of radially stretching the adhesive tape 100 by applying energy to the adhesive layer 2 to harden the adhesive layer 2 and reduce the adhesive strength of the adhesive layer 2. Then, a needle (not shown) provided on the dicer table 200 is caused to protrude from the dicer table 200 in the thickness direction, thereby pushing up the semiconductor chip 20 attached to the adhesive tape 100, thereby peeling it off from the adhesive tape 100. Note that, as described above, the application of energy to the adhesive layer 2 may be performed after the expanding step or prior to the expanding step.

[0048] In this main step [4A], the adhesive tape 100 of the present invention is used to pick up the semiconductor chips 20 while forming gaps between adjacent semiconductor chips 20 and pushing up the semiconductor chips 20 with needles. That is, in peeling the adhesive tape 100 from the semiconductor chips 20 in this step [4A], when the adhesive tape 100 is viewed in a plan view, the adhesive tape 100 is used to peel off the semiconductor chips 20 from the semiconductor chips 20. 2 The number of the above is 15.0 / mm 2 The following settings are used:

[0049] Therefore, in this step [4A], when peeling the adhesive tape 100 from the semiconductor chip 20, it is possible to appropriately suppress or prevent the occurrence of adhesive residue in which part of the adhesive layer 2 remains on the semiconductor chip 20, and to peel the adhesive tape 100 from the semiconductor chip 20 with excellent peelability, a detailed explanation of which will be given later.

[0050] By performing the above-described steps [1A] to [4A], the semiconductor chips 20 are separated (diced) from the semiconductor substrate 7 using the adhesive tape 100. That is, with the semiconductor substrate 7 fixed on the adhesive layer 2 of the adhesive tape 100, the tape is cut from the semiconductor substrate 7 to reach partway in the thickness direction of the base material 4, thereby dicing the semiconductor substrate 7 into multiple semiconductor chips 20. Thereafter, the adhesive tape 100 is stretched in the planar direction to form gaps at regular intervals between the semiconductor chips 20, and energy is applied to the adhesive layer 2 to harden the adhesive layer 2. Furthermore, the semiconductor chips 20 are pushed up from the base material 4 side, and then pulled out from the opposite side of the base material 4, whereby the semiconductor chips 20 are separated (peeled) from the adhesive layer 2.

[0051] [5A] Next, the picked-up semiconductor chip 20 is transferred from the vacuum collet or air tweezers to a mounting probe or the like and turned upside down, and then, as shown in Figure 3(a), the terminals 21 of this semiconductor chip 20 and the terminals 41 of the interposer 30 are placed opposite each other via the solder bumps 85 provided on the terminals 41, and the semiconductor chip 20 (semiconductor element) is placed on the interposer 30 (substrate) with the surface of the semiconductor chip 20 on which the terminals 21 are formed facing downward.

[0052] [6A] Next, as shown in FIG. 3(b), the interposer 30 and the semiconductor chip 20 are brought close to each other while the solder bumps 85 interposed between the terminals 21 and 41 are heated.

[0053] As a result, the molten solder bump 85 comes into contact with both the terminal 21 and the terminal 41, and by cooling in this state, a connection portion 81 is formed, and as a result, the terminal 21 and the terminal 41 are electrically connected via the connection portion 81 (mounting process; see Figure 3(c)).

[0054] [7A] Next, an underfill material (sealing material) made of various resin materials is filled into the gap formed between the semiconductor chip 20 and the interposer 30, and then the underfill material is hardened to form a sealing layer 80 made of the hardened underfill material (sealing layer forming process; see Figure 3(d)).

[0055] [8A] Next, a molded portion 17 (sealing portion) is formed on the upper side of the interposer 30 so as to cover the semiconductor chip 20 and the interposer 30, thereby sealing the semiconductor chip 20 between the interposer 30 and the molded portion 17, and a bump 70 electrically connected to a portion of the terminal 41 through a via provided in the interposer 30 is formed so as to protrude from the underside of the interposer 30 (see Figure 3(e)).

[0056] Here, sealing with the molded portion 17 is performed, for example, by preparing a molding die having an internal space corresponding to the shape of the molded portion 17 to be formed, and filling the internal space with a powdered semiconductor encapsulating material so as to cover the semiconductor chip 20 and interposer 30 arranged in the internal space. Then, in this state, the semiconductor encapsulating material is heated to harden it, resulting in a hardened product of the semiconductor encapsulating material.

[0057] The semiconductor device manufacturing method having the steps described above produces a semiconductor device 10. More specifically, after performing the steps [1A] to [8A], the steps [4A] to [8A] are repeatedly performed, whereby a plurality of semiconductor devices 10 can be manufactured in a batch from one semiconductor substrate 7.

[0058] The adhesive tape 100 of the present invention, which is used in the method for manufacturing such a semiconductor device 10, will be described below.

[0059] <Adhesive tape> 4 is a longitudinal cross-sectional view showing an embodiment of the adhesive tape. In the following description, the upper side in FIG. 4 will be referred to as "top" and the lower side as "bottom."

[0060] The adhesive tape 100 is composed of a laminate including a base material 4 containing a resin material and an adhesive layer 2 laminated on the upper surface (one side) of the base material 4, and is used to temporarily fix a semiconductor substrate 7 (substrate) and a semiconductor chip 20 (component).As mentioned above, the adhesive layer 2 contains a base resin having adhesive properties and a curable resin that hardens when energy is applied, and the adhesive strength of the adhesive layer 2 to the semiconductor substrate 7 and semiconductor chip 20 laminated on the adhesive layer 2 decreases when energy is applied.

[0061] In the manufacturing method of the semiconductor device 10 using this adhesive tape 100 as described above, there was a need to develop an adhesive tape 100 that effectively prevents the occurrence of adhesive residue, in which part of the adhesive tape 100 remains on the semiconductor chip 20, during the pick-up process of peeling the adhesive tape 100 from the semiconductor chip 20 in step [4A].

[0062] The inventors of the present invention have conducted extensive research with the aim of resolving this situation, and have found that the reason why adhesive residue appears on the picked-up semiconductor chip 20 is that the number of air bubbles remaining at the interface between the base material 4 and the adhesive layer 2 in the adhesive tape 100 must be taken into consideration.

[0063] As a result of further investigation, the present inventors have found that it is possible to control the number of bubbles remaining at the interface between the substrate 4 and the adhesive layer 2 to be small, and more specifically, to reduce the number of bubbles having an area of ​​100 μm or less at the interface between the substrate 4 and the adhesive layer 2 when the adhesive tape 100 is viewed in plan view. 2 The number of the above items is 15.0 pieces / mm 2 The inventors have found that the above-mentioned problems can be solved by setting the following, and have completed the present invention.

[0064] In the present invention, when the pressure-sensitive adhesive tape 100 is viewed in plan view, the bubbles formed at the interface between the substrate 4 and the pressure-sensitive adhesive layer 2 have an area of ​​100 μm 2 The number of the above is 15.0 / mm 2The adhesive tape 100 is set as follows. Therefore, when the semiconductor substrate 7 is attached to the adhesive tape 100 and the semiconductor substrate 7 is cut in the thickness direction to obtain individual semiconductor chips 20, and then the adhesive tape 100 is peeled off from the individual semiconductor chips 20, the adhesive residue on the semiconductor chips 20 can be appropriately suppressed or prevented, and the semiconductor chips 20 can be peeled off with excellent peelability. Therefore, in the step [8A], a plurality of semiconductor devices 10 with high reliability can be obtained.

[0065] The substrate 4 and adhesive layer 2 of such an adhesive tape 100 (dicing tape) will be described in detail below.

[0066] <Base material 4> The base material 4 is mainly made of a resin material, has a sheet shape, and has the function of supporting the adhesive layer 2 provided on this base material 4. It also serves to realize the expansion in the expanding step of step [4A], in which the adhesive tape 100 is expanded in the planar direction.

[0067] Such resin materials are not particularly limited, and examples thereof include thermoplastic resins such as olefin resins, polyester resins (ester polymers) such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and polybutylene naphthalate, polyurethane, polyimide, polyamide, polyether ketones such as polyether ether ketone, polyethersulfone, polystyrene, fluororesin, silicone resin, cellulose resin, styrene thermoplastic elastomers (styrene polymers), acrylic resin, polyester thermoplastic elastomers, polyvinyl isoprene, and polycarbonate (carbonate polymers), as well as mixtures of these thermoplastic resins.

[0068] These resin materials are materials that can transmit energy rays such as light (visible light, near-infrared light, ultraviolet light), X-rays, and electron beams, and are therefore preferably used when the energy rays are transmitted through the base material 4 from the base material 4 side and irradiated onto the adhesive layer 2. Therefore, by irradiating the adhesive layer 2 with energy rays from the base material 4 side, the adhesiveness of the adhesive layer 2 is reduced, and the semiconductor chip 20 can be easily picked up.

[0069] In particular, it is preferable to use a polyolefin resin as the resin material. By using an olefin resin, it is possible to set the parameter representing the surface roughness of the substrate 4, which will be described later, within the range, which will be described later, relatively easily.

[0070] Examples of such polyolefin resins include polyethylene resins such as linear low-density polyethylene, low-density polyethylene, and very low-density polyethylene; ethylene copolymers such as ethylene-vinyl acetate copolymer (EVA), ethylene-methyl methacrylate copolymer (EMMA), and ethylene-methacrylate copolymer (EMAA); and ionomers such as ethylene-based ionomers crosslinked with zinc ions, sodium ions, or potassium ions.

[0071] Furthermore, the base material 4 preferably contains a conductive material having electrical conductivity. By including such a conductive material, the conductive material can function as an antistatic agent, thereby effectively suppressing or preventing the generation of static electricity in the semiconductor chips 20 in the singulation step [3A] and the pick-up step [4A].

[0072] The conductive material is not particularly limited as long as it is conductive, but examples thereof include surfactants, permanently antistatic polymers (IDPs), metal materials, metal oxide materials, and carbon-based materials, and one or more of these may be used in combination.

[0073] Among these surfactants, examples include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants.

[0074] As the permanently antistatic polymer (IDP), any IDP such as polyether and polyolefin block polymer series, polyesteramide series, polyesteramide, polyetheresteramide, polyurethane series, etc. can be used.

[0075] Examples of metal materials include gold, silver, copper or silver-coated copper, and nickel, and powders of these metals are preferably used.

[0076] Examples of metal oxide materials include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), and the like, and powders of these metal oxides are preferably used.

[0077] Further, examples of carbon-based materials include carbon black, carbon nanotubes such as single-walled carbon nanotubes and multi-walled carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

[0078] Among these, the conductive material is preferably at least one of surfactants, permanently antistatic polymers (IDPs), metal oxide materials, and carbon black. These materials have a small temperature dependency of resistivity, so that even if the base material 4 is heated when the semiconductor substrate 7 is diced in the step [3A], the change in surface resistance can be reduced.

[0079] Furthermore, the substrate 4 may contain a softener such as mineral oil, a filler such as calcium carbonate, silica, talc, mica, or clay, an antioxidant, a light stabilizer, a lubricant, a dispersant, a neutralizer, a colorant, or the like.

[0080] The thickness of the base material 4 is preferably, for example, 30 μm or more and 150 μm or less, and more preferably 80 μm or more and 120 μm or less. When the thickness of the base material 4 is within this range, the base material 4 can more reliably perform its function, and the dicing of the semiconductor substrate 7 in the step [3A] and the pick-up of the semiconductor chips 20 in the step [4A] can be carried out with excellent workability.

[0081] Furthermore, the substrate 4 may have a functional group, such as a carboxyl group, a hydroxyl group, or an amino group, exposed on its surface, which is reactive with the constituent material contained in the adhesive layer 2.

[0082] The base material 4 may also be configured as a laminate (multilayer body) in which a plurality of layers made of different resin materials are laminated.

[0083] As described above, in the present invention, when the pressure-sensitive adhesive tape 100 is viewed in plan view, the bubbles formed at the interface between the substrate 4 and the pressure-sensitive adhesive layer 2 have an area of ​​100 μm 2 The number of the above is 15.0 / mm 2 The adhesive tape 100 is set as follows, and thereby, when peeling the adhesive tape 100 from the semiconductor chip 20, it is possible to appropriately suppress or prevent adhesive residue from being left on the semiconductor chip 20, and peel the adhesive tape 100 with excellent peelability.

[0084] The inventors have found through their research that the number of bubbles formed at the interface between the substrate 4 and the adhesive layer 2 can be reduced by appropriately setting a parameter that represents the surface roughness on the surface of the substrate 4 on the adhesive layer 2 side.

[0085] Specifically, on the surface of the substrate 4 on the adhesive layer 2 side, the average length Sm of the roughness curve element, which is a parameter representing the surface roughness defined in JIS B 0601 (2013), is preferably 100 μm or less, more preferably 5 μm or more and 70 μm or less, and even more preferably 5 μm or more and 40 μm or less. Furthermore, the arithmetic mean roughness Ra is preferably 1.0 μm or less, more preferably 0.05 μm or more and 0.5 μm or less, and even more preferably 0.05 μm or more and 0.25 μm or less. By setting at least one of the average length Sm of the roughness curve element and the arithmetic mean roughness Ra within the above range, the area of ​​100 μm 2 The number of bubbles can be reduced relatively easily to 15.0 bubbles / mm 2 It can be set to the following:

[0086] When the adhesive tape 100 is viewed in plan view, the area of ​​the bubbles formed at the interface between the substrate 4 and the adhesive layer 2 is 100 μm 2 The number of the above items is 15.0 pieces / mm 2 It is good if it is less than 0.001 pieces / mm 2 More than 13.0 pieces / mm 2 It is preferable that the number of particles is 0.01 particles / mm or less. 2 More than 7.0 pieces / mm 2 It is more preferable that the number is 0.1 or less per mm. 2 More than 2.0 pieces / mm 2 It is even more preferable that:

[0087] Furthermore, the area is 100 μm 2 The area occupied by the above bubbles is 1.0 x 10 -2 mm 2 / 1.0mm 2 Preferably, it is 1.0 x 10 or less. -6 mm 2 / 1.0mm 2 Over 5.0 x 10 -3 mm 2 / 1.0mm 2 More preferably, it is 1.0×10 or less. -5 mm 2 / 1.0mm 2Over 2.5 x 10 -3 mm 2 / 1.0mm 2 It is even more preferable that:

[0088] The area is 100 μm 2 By setting the number and occupied area of ​​the above bubbles within the above ranges, it is possible to more accurately suppress or prevent adhesive residue from being left on the semiconductor chip 20 when peeling the adhesive tape 100 from the semiconductor chip 20.

[0089] In addition, such adhesive tape 100 is prepared by fixing a 6-inch diameter, 500 μm thick, #2000 polished silicon substrate (silicon wafer) to the adhesive tape 100, and then cutting the silicon substrate in the thickness direction using a 30 μm thick blade until it reaches the middle of the base material 4 to obtain individual silicon chips each measuring 6 mm long x 6 mm wide. After that, the adhesive tape 100 is irradiated with ultraviolet light at an intensity of 55 mW / cm. 2 , Irradiation intensity: 200mJ / cm 2 The adhesive layer 2 is irradiated with ultraviolet light of 102% of the original size, and then the substrate 4 is stretched in the surface direction of the substrate 4 to 102% of its original size. A needle is then used to push the substrate 4 up 1.5 mm from the surface opposite the adhesive layer 2 of the substrate 4. The silicon chip is then picked up using a vacuum collet, and when peeled from the adhesive tape 100, the adhesive residue rate on the back surface of the silicon chip is preferably 1.0% or less, more preferably 0.01% or less, and even more preferably 0.004% or less. By satisfying the adhesive residue rate being equal to or less than the upper limit, when the semiconductor chip 20 obtained using various semiconductor substrates 7 is picked up in step [4A], i.e., when the adhesive tape 100 is peeled off from the semiconductor chip 20, adhesive residue on the semiconductor chip 20 can be more reliably suppressed or prevented. Furthermore, since adhesive residue on the semiconductor chip 20 can be more reliably suppressed or prevented in step [4A], the semiconductor chip 20 can be more reliably picked up.

[0090] <Adhesive layer 2> The adhesive layer 2 adheres to and supports the semiconductor substrate 7 when the semiconductor substrate 7 is diced in the step [3A], and in the step [4A], energy is applied to the adhesive layer 2 to harden the adhesive layer 2, thereby providing adhesiveness to the extent that the semiconductor chips 20 obtained by dicing the semiconductor substrate 7 can be picked up.

[0091] The adhesive layer 2 having such a function is made of a resin composition containing (1) a base resin having adhesive properties and (2) a curable resin that hardens the adhesive layer 2 as main materials.

[0092] Each component contained in this resin composition will be described in detail below. (1) Base resin The base resin has adhesiveness and is contained in the resin composition in order to impart adhesiveness to the semiconductor substrate 7 to the adhesive layer 2 .

[0093] Examples of such base resins include known adhesive layer components such as acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), polyvinyl ether resins (adhesives), styrene elastomer resins (adhesives), polyisoprene resins (adhesives), polyisobutylene resins (adhesives), and urethane resins (adhesives), but among these, acrylic resins are preferred. Acrylic resins are preferred as base resins because they have excellent heat resistance and are relatively easy and inexpensive to obtain.

[0094] Acrylic resins are those whose base polymer is a polymer (homopolymer or copolymer) whose main monomer component is (meth)acrylic acid ester.

[0095] The (meth)acrylic acid ester is not particularly limited, but examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, and decyl (meth)acrylate. Examples of suitable acrylates include alkyl (meth)acrylates such as methyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, and octadecyl (meth)acrylate; cycloalkyl (meth)acrylates such as cyclohexyl (meth)acrylate; and aryl (meth)acrylates such as phenyl (meth)acrylate. These acrylates may be used alone or in combination. Among these, alkyl (meth)acrylates such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and octyl (meth)acrylate are preferred. Alkyl (meth)acrylates are particularly heat-resistant and can be obtained relatively easily and inexpensively.

[0096] In this specification, the term "(meth)acrylic acid ester" is used to include both acrylic acid ester and methacrylic acid ester.

[0097] The acrylic resin used may contain a copolymerizable monomer as a monomer component constituting the polymer, if necessary, for the purpose of improving properties such as cohesive strength and heat resistance.

[0098] Such copolymerizable monomers are not particularly limited, and examples thereof include hydroxyl group-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-hydroxyhexyl (meth)acrylate; epoxy group-containing monomers such as glycidyl (meth)acrylate; carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride; amide monomers such as (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N-methoxymethyl(meth)acrylamide, and N-butoxymethyl(meth)acrylamide; amino group-containing monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and t-butylaminoethyl (meth)acrylate; Examples of such monomers include cyano group-containing monomers such as (meth)acrylonitrile, olefin-based monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene, styrene-based monomers such as styrene, α-methylstyrene, and vinyltoluene, vinyl ester-based monomers such as vinyl acetate and vinyl propionate, vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether, halogen atom-containing monomers such as vinyl chloride and vinylidene chloride, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, and monomers having a nitrogen atom-containing ring such as N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, and N-(meth)acryloylmorpholine. These monomers may be used alone or in combination of two or more.

[0099] The content of these copolymerizable monomers is preferably 40% by weight or less, and more preferably 10% by weight or less, based on the total monomer components constituting the acrylic resin.

[0100] The copolymerizable monomer may be contained at the terminal of the main chain of the polymer constituting the acrylic resin, or may be contained in the main chain, or may be contained both at the terminal of the main chain and in the main chain.

[0101] Furthermore, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of crosslinking between polymers.

[0102] Examples of polyfunctional monomers include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerin di(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyl di(meth)acrylate, and hexyl di(meth)acrylate, and these can be used alone or in combination of two or more.

[0103] Furthermore, ethylene-vinyl acetate copolymers and vinyl acetate polymers can also be used as copolymerizable monomer components.

[0104] Such an acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. The polymerization of these monomer components can be carried out using a polymerization method such as solution polymerization, emulsion polymerization, bulk polymerization, or suspension polymerization.

[0105] The acrylic resin preferably has a low content of low-molecular-weight substances from the viewpoint of preventing contamination of the semiconductor substrate 7 and the like by the acrylic resin when dicing the semiconductor substrate 7 in the step [3A]. In this case, the weight-average molecular weight of the acrylic resin is preferably set to 300,000 to 5,000,000, more preferably 500,000 to 5,000,000, and even more preferably 800,000 to 3,000,000. Note that, depending on the type of monomer component, if the weight-average molecular weight of the acrylic resin is less than 500,000, the ability to prevent contamination of the semiconductor substrate 7 and the like may decrease, and as a result, adhesive residue may be left behind when the semiconductor chip 20 is peeled off.

[0106] The acrylic resin preferably has a functional group (reactive functional group) that is reactive with a crosslinking agent or a photopolymerization initiator, such as a hydroxyl group or a carboxyl group (particularly a hydroxyl group). This allows the crosslinking agent or photopolymerization initiator to be linked to the acrylic resin, which is a polymer component, thereby effectively suppressing or preventing leakage of the crosslinking agent or photopolymerization initiator from the adhesive layer 2. As a result, the adhesiveness of the adhesive layer 2 to the semiconductor substrate 7 is reliably reduced by the energy ray irradiation in the step [4A].

[0107] (2) Curing resin The curable resin has a curing property such that it is cured by irradiation with energy rays, for example. As a result of this curing, the base resin is incorporated into the crosslinked structure of the curable resin, and as a result, the adhesive strength of the adhesive layer 2 decreases.

[0108] As such a curable resin, for example, a low molecular weight compound having at least two polymerizable carbon-carbon double bonds as functional groups in the molecule, which are capable of three-dimensional crosslinking by irradiation with energy rays such as ultraviolet rays or electron beams, is used. Specific examples include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, and the like. acrylate, 1,4-butylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, esters of (meth)acrylic acid with polyhydric alcohols such as glycerin di(meth)acrylate, ester acrylate oligomers, cyanurate compounds having a carbon-carbon double bond-containing group such as 2-propenyl-di-3-butenyl cyanurate, tris(2-acryloxyethyl)isocyanurate, tris(2-methacryloxyethyl)isocyanurate, 2-hydroxyethyl Examples of suitable isocyanurate compounds having a carbon-carbon double bond-containing group, such as bis(2-acryloxyethyl)isocyanurate, bis(2-acryloxyethyl)2-[(5-acryloxyhexyl)oxy]ethyl isocyanurate, tris(1,3-diacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, tris(1-acryloxyethyl-3-methacryloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, and tris(4-acryloxy-n-butyl)isocyanurate, are commercially available oligoester acrylates, aromatic and aliphatic urethane acrylates, and bisphenol A epoxy acrylates. These may be used alone or in combination of two or more. Among these, oligomers having 6 or more functional groups are preferred, and oligomers having 15 or more functional groups are more preferred.This allows the curable resin to be more reliably cured by irradiation with energy rays. Furthermore, such a curable resin is preferably urethane acrylate. This allows the adhesive layer 2 to have appropriate flexibility. Therefore, when the semiconductor chip 20 is pushed up during pickup, it is possible to reliably suppress or prevent the adhesive layer 2 from cracking.

[0109] The urethane acrylate is not particularly limited, but examples thereof include those obtained by reacting a terminal isocyanate urethane prepolymer obtained by reacting a polyester-type or polyether-type polyol compound with a polyvalent isocyanate compound (e.g., 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc.), with a (meth)acrylate having a hydroxyl group (e.g., 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, polyethylene glycol (meth)acrylate, etc.).

[0110] Furthermore, although the curable resin is not particularly limited, it is preferable that two or more curable resins with different weight-average molecular weights are mixed. By using such a curable resin, the degree of crosslinking of the resin due to energy ray irradiation can be easily controlled, and the pickup properties of the semiconductor chip body 23 (semiconductor chip 20) in the step [4A] can be improved. Furthermore, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight-average molecular weight greater than that of the first curable resin may be used.

[0111] When the curable resin is a mixture of a first curable resin and a second curable resin, the weight-average molecular weight of the first curable resin is preferably about 100 to 1,000, and more preferably about 200 to 500. The weight-average molecular weight of the second curable resin is preferably about 1,000 to 30,000, more preferably about 1,000 to 10,000, and even more preferably about 2,000 to 5,000. The number of functional groups in the first curable resin is preferably 1 to 5, and the number of functional groups in the second curable resin is preferably 6 or more. By satisfying this relationship, the above-mentioned effects can be more significantly exhibited.

[0112] The curable resin is preferably blended in an amount of 50 to 200 parts by weight, and more preferably 100 to 180 parts by weight, per 100 parts by weight of the base resin, so that the functions exhibited by the addition of the curable resin and the base resin to the resin composition can be reliably exhibited by both the curable resin and the base resin.

[0113] When a double-bond-introduced acrylic resin is used as the acrylic resin described above, that is, when one having a carbon-carbon double bond in a side chain, in the main chain, or at the end of the main chain is used, the addition of this curable resin to the resin composition may be omitted. This is because, when the acrylic resin is a double-bond-introduced acrylic resin, the adhesive layer 2 is cured by irradiation with energy rays due to the function of the carbon-carbon double bond contained in the double-bond-introduced acrylic resin, and as a result, the adhesive strength of the adhesive layer 2 is reduced.

[0114] (3) Photopolymerization initiator Furthermore, the adhesive layer 2 loses adhesion to the semiconductor substrate 7 when irradiated with energy rays. When ultraviolet rays or the like are used as the energy rays, it is preferable that the curable resin contains a photopolymerization initiator to facilitate the initiation of polymerization of the curable resin.

[0115] Examples of the photopolymerization initiator include 2,2-dimethoxy-1,2-diphenylethan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-propan-1-one, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl) ketone, α-hydroxy-α,α'- Dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, Michler's ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane-1, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, Dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzil dimethyl ketal, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime, benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloxybenzophenone, p-acryloxybenzophenone Benzophenone-4-carboxylic acid esters of acrylates such as benzophenone, o-methacryloxybenzophenone, p-methacryloxybenzophenone, p-(meth)acryloxyethoxybenzophenone, 1,4-butanediol mono(meth)acrylate, 1,2-ethanediol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,Examples include 4-diethylthioxanthone, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloroanthraquinone, camphorquinone, halogenated ketones, acylphosphinoxides, acylphosphonates, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, t-butylanthraquinone, and 2,4,5-triarylimidazole dimers, and these can be used alone or in combination of two or more.

[0116] Among these, benzophenone derivatives and alkylphenone derivatives are preferred. These compounds have a hydroxyl group as a reactive functional group in the molecule, and can be linked to a base resin or a curable resin via this reactive functional group, allowing them to more reliably function as a photopolymerization initiator.

[0117] The photopolymerization initiator is preferably blended in an amount of 0.1 to 50 parts by weight, and more preferably 0.5 to 10 parts by weight, per 100 parts by weight of the base resin. By adjusting the blending amount of the photopolymerization initiator as described above, the photopolymerization initiator can reliably exhibit the function exhibited by adding the photopolymerization initiator to the resin composition.

[0118] (4) Crosslinking agent Furthermore, the curable resin may contain a crosslinking agent, which improves the curability of the curable resin.

[0119] The crosslinking agent is not particularly limited, but examples thereof include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, urea resin-based crosslinking agents, methylol-based crosslinking agents, chelate-based crosslinking agents, aziridine-based crosslinking agents, melamine-based crosslinking agents, polyvalent metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, carboxyl group-containing polymer-based crosslinking agents, etc. Among these, isocyanate-based crosslinking agents are preferred.

[0120] The isocyanate-based crosslinking agent is not particularly limited, but examples thereof include polyisocyanate compounds of polyvalent isocyanates, trimers of polyisocyanate compounds, trimers of isocyanate-terminated compounds obtained by reacting a polyisocyanate compound with a polyol compound, and blocked polyisocyanate compounds in which isocyanate-terminated urethane prepolymers are blocked with phenol, oximes, or the like.

[0121] Examples of polyisocyanates include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenylether diisocyanate, 4,4'-[2,2-bis(4-phenoxyphenyl)propane]diisocyanate, and 2,2,4-trimethyl-hexamethylene diisocyanate. These may be used alone or in combination of two or more. Among these, at least one polyvalent isocyanate selected from the group consisting of 2,4-tolylene diisocyanate, diphenylmethane-4,4'-diisocyanate, and hexamethylene diisocyanate is preferred.

[0122] The crosslinking agent is preferably blended in an amount of 0.01 to 50 parts by weight, more preferably 5 to 50 parts by weight, per 100 parts by weight of the base resin. By adjusting the blending amount of the crosslinking agent as described above, the crosslinking agent can be made to reliably exhibit the function exhibited by adding the crosslinking agent to the resin composition.

[0123] (5) Other ingredients Furthermore, the resin composition constituting the adhesive layer 2 may contain, in addition to the above-mentioned components (1) to (4), at least one of other components selected from the group consisting of conductive materials, tackifiers, antioxidants, adhesion adjusters, fillers, colorants, flame retardants, softeners, antioxidants, plasticizers, surfactants, etc.

[0124] Among these, the conductive material is not particularly limited as long as it has conductivity, but the same conductive materials as those described as the conductive material contained in the base material 4 can be used.

[0125] By including such a conductive material, the conductive material functions as an antistatic agent, thereby effectively suppressing or preventing the generation of static electricity in the semiconductor chip 20 during the singulation process [3A] and the pick-up process [4A].

[0126] When a conductive material is contained in either the base material 4 or the adhesive layer 2, it is preferable that the conductive material be contained in the base material 4. This makes it possible to more reliably suppress or prevent the generation of static electricity on the semiconductor chip 20 without having to reliably attach a conductive material to the semiconductor chip 20.

[0127] Among these, the tackifier is not particularly limited, but examples thereof include rosin resins, terpene resins, coumarone resins, phenolic resins, aliphatic petroleum resins, aromatic petroleum resins, and aliphatic-aromatic copolymer petroleum resins, and one or more of these may be used in combination.

[0128] The thickness of the adhesive layer 2 is not particularly limited, but is preferably 5 μm to 50 μm, more preferably 5 μm to 10 μm. By setting the thickness of the adhesive layer 2 within this range, the adhesive layer 2 can exhibit good adhesive strength to the semiconductor substrate 7 in the singulation step [3A] and can also have adhesiveness to the extent that good peelability can be exhibited between the adhesive layer 2 and the semiconductor substrate 7 in the pick-up step [4A].

[0129] Furthermore, the adhesive layer 2 has an elastic modulus of 1.0×10 at 30° C. before curing the adhesive layer 2 (before applying energy). 4 Pa or more 1.0×10 6 Pa or less, and 4 Pa or more 5.0×10 5 Pa or less is more preferable, and 5.0 × 10 4 Pa or more 7.0×10 4 It is more preferable that the surface area of ​​the bubbles formed at the interface between the substrate 4 and the adhesive layer 2 is 100 μm or less. 2 The number of items with a density of 15.0 or more per mm was relatively easily 2 It can be set to the following:

[0130] The adhesive layer 2 has an elastic modulus of 1.0×10 at 25° C. after curing (after application of energy). 8 Pa or more 1.0×10 10 Pa or less, and 8 Pa or more 5.0×10 9 It is more preferable that the pressure is less than Pa. This allows the adhesive layer 2 to function as a cushioning layer when the semiconductor chip 20 is pushed up in the pick-up step [4A], thereby accurately suppressing or preventing the occurrence of glue cracks in the adhesive layer 2.

[0131] The modulus of elasticity of the adhesive layer 2 can be measured, for example, using a dynamic viscoelasticity measuring device (DMA) under conditions of a temperature rise rate of 3° C. / min and a frequency of 10 Hz.

[0132] The adhesive layer 2 may also be formed as a laminate (multilayer body) in which a plurality of layers made of different resin compositions are laminated.

[0133] Next, the adhesive tape 100 having such a configuration can be produced, for example, as follows.

[0134] <Adhesive tape manufacturing method> Fig. 5 is a vertical cross-sectional view for explaining a method for producing the adhesive tape shown in Fig. 4. In the following explanation, the upper side in Fig. 5 will be referred to as "top" and the lower side as "bottom".

[0135] [1B] First, prepare a substrate 4 (see FIG. 5(a)). The method for producing the substrate 4 is not particularly limited, and examples thereof include common molding methods such as extrusion molding methods such as a calendar method, an inflation extrusion method, and a T-die extrusion method, and a wet casting method. When the substrate 4 is formed as a laminate, molding methods such as a co-extrusion method and a dry lamination method are used as the method for producing the substrate 4 having such a configuration.

[0136] The substrate 4 can be used without stretching, or may be subjected to uniaxial or biaxial stretching treatment as required.

[0137] [2B] Next, an adhesive layer 2 is formed on the upper surface of the substrate 4 (see FIG. 5(b)). The surface (upper surface) of the substrate 4 may be subjected to a surface treatment such as corona treatment, chromic acid treatment, matte treatment, ozone exposure treatment, flame exposure treatment, high-voltage shock exposure treatment, ionizing radiation treatment, primer treatment, or anchor coat treatment in order to improve adhesion between the substrate 4 and the adhesive layer 2.

[0138] The adhesive layer 2 can also be obtained by applying or spraying onto the substrate 4 a liquid material in the form of a varnish, which is made by dissolving the resin composition that is the constituent material of the adhesive layer 2 in a solvent, and then evaporating the solvent to form the adhesive layer 2.

[0139] The solvent is not particularly limited, but examples thereof include methyl ethyl ketone, acetone, toluene, ethyl acetate, dimethyl formaldehyde, etc., and one or more of these can be used in combination.

[0140] Furthermore, the liquid material can be applied or sprayed onto the substrate 4 using methods such as die coating, curtain die coating, gravure coating, comma coating, bar coating, and lip coating.

[0141] [3B] Next, a portion of the adhesive layer 2 formed on the substrate 4 is removed in a circular shape while leaving the substrate 4 in the thickness direction of the adhesive layer 2 so that the central side and the peripheral side are separated, thereby forming the adhesive layer 2 having a central portion 122 and a peripheral portion 121 (see Figure 5(c)).

[0142] An example of a method for removing a portion of the adhesive layer 2 in a circular shape is to punch out a portion surrounding the area to be removed, and then remove the adhesive layer 2 located in the punched-out area.

[0143] The region to be removed can be punched out using, for example, a method using a roll-shaped mold or a method using a press mold. Among these, the method using a roll-shaped mold, which allows continuous production of the pressure-sensitive adhesive tape 100, is preferred.

[0144] In this step, a part of the adhesive layer 2 is punched out into a ring shape (circular shape) to form the central part 122 and the outer periphery 121, but the shape of the punched part of the adhesive layer 2 may be any shape as long as it is a shape that allows the outer periphery 121 of the adhesive layer 2 to be fixed with a wafer ring in the above-mentioned method for manufacturing a semiconductor device. Specifically, examples of the punched shape include the above-mentioned circular shape, as well as oval shapes such as an ellipse and a bale shape, and polygonal shapes such as a square shape and a pentagon.

[0145] [4B] Next, the separator 1 is laminated on the adhesive layer 2 formed on the substrate 4, thereby obtaining an adhesive tape 100 in which the adhesive layer 2 is covered with the separator 1 (see FIG. 5(d)).

[0146] The method for laminating the separator 1 on the adhesive layer 2 is not particularly limited, and may be, for example, a lamination method using a roll or a lamination method using a press. Among these, the lamination method using a roll is preferred from the viewpoint of productivity, which allows for continuous production.

[0147] The separator 1 is not particularly limited, but examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

[0148] Furthermore, the separator 1 may have its surface subjected to a release treatment so that it is peeled off when the pressure-sensitive adhesive tape 100 is used. Examples of release treatment include coating the surface of the separator 1 with a release agent and providing fine irregularities on the surface of the separator 1. Examples of release agents include silicone-based, alkyd-based, and fluorine-based agents.

[0149] Through the steps described above, the adhesive tape 100 covered with the separator 1 can be formed.

[0150] The adhesive tape 100 covered with the separator 1 manufactured in this embodiment is used after peeling the adhesive tape 100 from the separator 1 in the method for manufacturing a semiconductor device using the adhesive tape 100 described above.

[0151] Furthermore, when peeling the separator 1 from the adhesive layer 2 that it covers, it is preferable to peel the separator 1 at an angle of 90° or more and 180° or less with respect to the surface of the adhesive layer 2. By setting the angle at which the separator 1 is peeled within this range, peeling can be reliably prevented at any point other than the interface between the adhesive layer 2 and the separator 1.

[0152] Although the pressure-sensitive adhesive tape of the present invention has been described above, the present invention is not limited thereto.

[0153] For example, any component capable of exerting the same function may be added to each layer of the adhesive tape of the present invention, or the substrate may be composed of a single layer as described in the above embodiment, or may be composed of multiple layers, and for example, the substrate may be provided with an antistatic layer on the surface opposite to the adhesive layer of the above-mentioned substrate.

[0154] Furthermore, the configuration of each layer of the adhesive tape can be replaced with any other layer that can exert the same function, or any other layer can be added.

[0155] Furthermore, depending on the configuration of the semiconductor device formed using the adhesive tape, it may be possible to omit the formation of the molded portion 17 provided in the semiconductor device 10.

[0156] The adhesive tape of the present invention can be applied not only to the case where a semiconductor substrate to which an adhesive tape has been attached is cut in the thickness direction (diced) to obtain cut pieces, i.e., semiconductor chips as components, but also to various substrate processing applications in which components must be obtained by cutting the substrate in the thickness direction while the substrate is temporarily fixed on the adhesive tape, and then peeling the components from the adhesive tape. Substrates to be attached with the adhesive tape of the present invention include, in addition to the semiconductor substrates (semiconductor wafers) described above, glass substrates such as soda-lime glass, borosilicate glass, and quartz glass, ceramic substrates such as alumina, silicon nitride, and titanium oxide, resin material substrates such as acrylic, polycarbonate, and rubber, and metal material substrates. [Example]

[0157] Next, specific examples of the present invention will be described. However, the present invention is not limited to the descriptions in these examples.

[0158] 1. Raw material preparation First, the raw materials used in the production of the pressure-sensitive adhesive tape 100 of each example and each comparative example are shown below.

[0159] (Polyolefin resin 1) As polyolefin resin 1, low-density polyethylene (manufactured by Sumitomo Chemical Co., Ltd., "Sumikasen F200-0", specific gravity: 0.92 g / cm 3 ) was prepared.

[0160] (Base Resin 1) As the base resin 1, an acrylic copolymer was prepared by mixing at least two of butyl acrylate, acrylic acid, butyl methacrylate, 2-ethylhexyl acrylate, and N,N-dimethylacrylamide and subjecting them to solution polymerization in a toluene solvent by a conventional method.

[0161] The glass transition temperature and weight average molecular weight of base resin (acrylic copolymer) 1 were as shown below. Base resin 1 (glass transition temperature: -14°C, weight average molecular weight: 500,000)

[0162] (curable resin 1) As the curable resin 1, a tetrafunctional oligomer urethane acrylate (manufactured by Nippon Kayaku Co., Ltd., product number: KAYARAD RP-1040) was prepared.

[0163] (Crosslinker 1) As a crosslinking agent 1, polyisocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd., product number: Coronate L) was prepared.

[0164] (Photopolymerization initiator 1) As a photopolymerization initiator 1, benzyl dimethyl ketal (manufactured by Ciba Specialty Chemicals, product number: Irgacure 651) was prepared.

[0165] 2. Preparation of adhesive tape 100 [Example 1] The polyolefin resin 1 was extruded from the extruder included in the extrusion molding machine to prepare a substrate 4 having a thickness of 100 μm.

[0166] In addition, using an ultra-depth profile measuring microscope (Keyence Corporation, "VK9700"), the average length Sm of the roughness curve elements and the arithmetic mean roughness Ra of the surface of the substrate 4 on the side where the adhesive layer 2 is formed were measured at a magnification of 20 times. Sm and Ra were measured in accordance with JIS B 0601 (2013). As a result, the average length Sm of the roughness curve elements was 80 μm, and the arithmetic mean roughness Ra was 0.75 μm.

[0167] Next, a liquid material containing a resin composition was prepared by blending base resin 1 (100 parts by weight), curable resin 1 (140 parts by weight per 100 parts by weight of base resin), crosslinker 1 (5 parts by weight per 100 parts by weight of base resin), and photopolymerization initiator 1 (3 parts by weight per 100 parts by weight of base resin). This liquid material was bar-coated onto substrate 4 so that the adhesive layer 2 would have a thickness of 10 μm after drying, and then dried at 80° C. for 1 minute to form adhesive layer 2 on the upper surface (one side) of substrate 4, thereby obtaining adhesive tape 100 of Example 1.

[0168] The modulus of elasticity of the adhesive layer 2 of the adhesive tape 100 at 30°C before application of energy was measured using a dynamic viscoelasticity measuring device (DMA) under conditions of a temperature rise rate of 3°C / min and a frequency of 10 Hz, and was found to be 8.2 × 10 4 It was Pa.

[0169] [Examples 2 to 6, Comparative Examples 1 and 2] When forming the substrate 4 using an extrusion molding machine, metal rolls with different surface roughnesses were used as the metal rolls equipped in the extrusion molding machine, and the average length Sm of the roughness curve elements and the arithmetic mean roughness Ra on the surface of the substrate 4 on which the adhesive layer 2 was formed were changed as shown in Table 1, and the resin composition for forming the adhesive layer 2 was used with the content shown in Table 1, except that an adhesive tape 100 was produced in the same manner as in Example 1.

[0170] 3. Evaluation The resulting pressure-sensitive adhesive tapes 100 of the Examples and Comparative Examples were evaluated by the following methods.

[0171] 3-1. Check for air bubbles For the pressure-sensitive adhesive tapes 100 of each of the Examples and Comparative Examples, the number of bubbles formed at the interface between the substrate 4 and the pressure-sensitive adhesive layer 2 was measured using a digital microscope (manufactured by Keyence Corporation, "VHX6000"). 2 The number of bubbles per 1mm x 1mm area (pieces / mm 2 ), and the occupied area per 1mm x 1mm area (mm 2 / 1.0mm 2 The measurement of bubbles using a digital microscope was carried out at 10 locations in a 5-row x 2-column arrangement in an area of ​​3.2 mm x 2.3 mm on the adhesive tape 100, and among the measured bubbles, those with an area of ​​100 μm 2 The number of bubbles and the area occupied by the bubbles were calculated for each of the 10 areas, and then the average value was calculated to obtain an area of ​​100 μm 2 The number and occupied area of ​​the bubbles were obtained.

[0172] 3-2. Check for residual glue A silicon wafer (manufactured by SUMCO Corporation, diameter 6 inches, thickness 650 μm) made of silicon was prepared, and a silicon wafer having a thickness of 530 μm was obtained using a #320 wheel. After that, the wafer was ground to a thickness of 500 μm using a #2000 wheel. Then, the adhesive tape 100 of each example and comparative example was fixed to the ground surface with the adhesive layer 2 facing the silicon wafer side. The silicon wafer was cut in the thickness direction until it reached the middle of the substrate 4, and individual pieces were obtained by obtaining silicon chips having a size of 6 mm length × 6 mm width. Then, ultraviolet intensity: 55 mW / cm 2 , Irradiation intensity: 200mJ / cm 2 The adhesive layer 2 was irradiated with ultraviolet light of 102% of the original size in the planar direction of the substrate 4, and the silicon chip was picked up using a vacuum collet in a state where the substrate 4 was extended by 102% of the original size in the planar direction of the substrate 4 and a needle was pushed up 1.5 mm from the surface of the substrate 4 opposite to the adhesive layer 2.

[0173] Next, the surface of the silicon chip from which the adhesive tape 100 had been peeled off was observed under an optical microscope (magnification × 100), and the area (cm 2 ) was measured to determine the adhesive residue rate (%) of the adhesive layer 2 remaining.

[0174] 3-3. Evaluation of contamination of silicon chips A silicon wafer (manufactured by SUMCO Corporation) made of silicon was prepared and roughly ground in the usual way to obtain a silicon wafer with a thickness of 230 μm. This silicon wafer was then ground to a thickness of 200 μm with a #2000 wheel, and the adhesive tape 100 of each example and comparative example was fixed to the ground surface with the adhesive layer 2 facing the silicon wafer. The silicon wafer was then cut in the thickness direction until it reached the middle of the substrate 4, thereby obtaining multiple silicon chips with dimensions of 6 mm long x 6 mm wide. Thereafter, the adhesive tape 100 was stretched radially in the surface direction of the substrate 4 at 60°C, and the adhesive layer 2 was exposed to ultraviolet light with an irradiance of 55 W / cm. 2 , UV irradiation amount: 200mJ / cm 2 The adhesive layer 2 was cured by applying energy by irradiating it with ultraviolet light under the conditions of (a).

[0175] Next, the silicon chip was pushed up using four needles with a tip diameter of 100 μm, with the needle push-up amount set to 1000 μm.

[0176] Next, while the needle was still pushing up the silicon chip, the silicon chip was picked up by suction with a vacuum collet.

[0177] The above-described pick-up of silicon chips by suction was repeatedly carried out for 200 pieces for each of the adhesive tapes 100 of the Examples and Comparative Examples.

[0178] Then, for each adhesive tape 100 of each example and each comparative example, the chip surface of the picked-up silicon chip was observed using an optical microscope (magnification x500), and the chip contamination of the silicon chip was evaluated according to the following criteria.

[0179] ◎◎:For 200 silicon chips, No contamination (glue adhesion, cutting debris adhesion, etc.) occurred on the chip surface ◎: For silicon chips with 198 or more but less than 200 No contamination (glue adhesion, cutting debris adhesion, etc.) occurred on the chip surface ○: For silicon chips with 195 or more but less than 198, No contamination (glue adhesion, cutting debris adhesion, etc.) occurred on the chip surface △: For silicon chips with 193 or more but less than 195, No contamination (glue adhesion, cutting debris adhesion, etc.) occurred on the chip surface ×: For less than 193 silicon chips, No contamination (glue adhesion, cutting debris adhesion, etc.) occurred on the chip surface The results of the various evaluations carried out as described above are shown in Table 1.

[0180] [Table 1]

[0181] As shown in Table 1, in the adhesive tapes of each Example, the number of bubbles was 15.0 / mm 2 The following settings made it possible to appropriately suppress or prevent the occurrence of adhesive residue on the silicon chip, and to pick up the silicon chip.

[0182] In contrast, in the adhesive tapes of each comparative example, the number of bubbles was set to 15.0 bubbles / mm 2 below As a result, adhesive residue was observed on the silicon chip. [Explanation of symbols]

[0183] 1 Separator 2 Adhesive layer 4 Base material 7. Semiconductor substrate 9 Wafer ring 10 Semiconductor devices 17 Mold section 20 Semiconductor chips 21 terminals 23 Semiconductor chip body 30 Interposer 41 terminals 70 Bump 80 Sealing layer 81 Connection 85 Solder bumps 100 adhesive tape 121 Outer periphery 122 Center 200 Dicer Table 210 Center 220 Outer periphery

Claims

1. An adhesive tape that is configured from a laminate including a base material containing a resin material and an adhesive layer laminated on one surface of the base material, and is used for temporarily fixing at least one of a substrate and a component, the adhesive layer contains a base resin having adhesiveness and a curable resin that is cured by the application of energy, and the application of energy reduces adhesive strength to the substrate and components stacked on the adhesive layer; The substrate has a surface on the adhesive layer side, and the average length Sm of the roughness curve element, which is a parameter representing the surface roughness defined in JIS B 0601 (2013), is 100 μm or less; When the pressure-sensitive adhesive tape is viewed in a plan view, bubbles formed at the interface between the substrate and the pressure-sensitive adhesive layer have an area of ​​100 μm ２ The number of the above is 15.0 pieces / mm ２ An adhesive tape characterized by:

2. When the pressure-sensitive adhesive tape is viewed in plan view, the area occupied by the air bubbles is 0.01 mm ２ / 1.0mm ２ The adhesive tape according to claim 1, wherein:

3. 3. The pressure-sensitive adhesive tape according to claim 1, wherein the substrate has a surface on the pressure-sensitive adhesive layer side that has an arithmetic mean roughness Ra, which is a parameter representing surface roughness defined in JIS B 0601 (2013), of 1.0 μm or less.

4. 4. The adhesive tape according to claim 1, wherein the resin material is a polyolefin resin.

5. The adhesive layer has an elastic modulus of 1.0×10 at 30° C. before the application of energy. ４ The pressure-sensitive adhesive tape according to any one of claims 1 to 4, wherein the compressive strength is 1.0 x 10<6 > Pa or more and 1.0 x 10<6 > Pa or less.

6. 6. The adhesive tape according to claim 1, wherein the adhesive tape is used for separating a plurality of components from the adhesive layer by cutting a substrate fixed on the adhesive layer from the substrate to reach partway in the thickness direction of the base material, thereby dividing the substrate into individual components, and then, while stretching the adhesive tape in the planar direction, pushing up the components from the base material side and pulling them out from the opposite side of the base material, thereby separating the components from the adhesive layer.

7. The adhesive tape according to any one of claims 1 to 6, which satisfies the following requirement A: Requirement A: A silicon substrate (diameter 6 inches, thickness 500 μm, #2000 polishing) is fixed to the adhesive tape, and then, using a blade with a thickness of 30 μm, the silicon substrate is cut in the thickness direction until it reaches the middle of the base material, thereby obtaining silicon chips with a size of 6 mm length x 6 mm width. Then, ultraviolet intensity: 55 mW / cm ２ , Irradiation intensity: 200mJ / cm ２ The adhesive layer is irradiated with ultraviolet light of 1.0% or less, and then the substrate is stretched in the surface direction of the substrate to 102% of its original size, and a needle is pushed up 1.5 mm from the surface of the substrate opposite the adhesive layer. Then, the silicon chip is picked up using a vacuum collet and peeled off from the adhesive tape, and the adhesive residue rate on the back surface of the silicon chip is 1.0% or less.

8. The adhesive tape according to claim 1 , wherein the adhesive layer has a thickness of 5 μm or more and 50 μm or less.

9. 9. The adhesive tape according to claim 1, wherein the substrate has a thickness of 30 [mu]m or more and 150 [mu]m or less.

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