Transfer device and transfer method

Abstract

To provide a transfer device and a transfer method with which it is possible to reliably separate an element from a transfer board and transfer it to a mating transfer board to which to be transferred.SOLUTION: A transfer board 22 includes a blistering layer 24 that creates a blister 30 by irradiation with an active energy ray, with an element 21 held to the blistering layer 24, and a mating transfer board 23 to which to be transferred includes a catch layer 25 that is capable of holding the element 21, with the catch layer 25 disposed so as to face the transfer board 22. An energy irradiation unit 12 forms a blister 30 in an element hold region 24a that holds one element 21 in the blistering layer 24 and thereby changes the inclination of the element 21 relative to the transfer board 22, bringing it closer to the mating transfer board 23. Then, the element 21 is partly moved ahead while the blistering layer 24 holds the element 21 and brought into contact with the catch layer 25.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a transfer apparatus and a transfer method that irradiates a transfer substrate with light energy and transfers an element to a transfer substrate by utilizing blistering. [Background technology]

[0002] In recent years, semiconductor chips have been miniaturized to reduce costs, and efforts are being made to mount these miniaturized semiconductor chips with high precision. To mount these miniaturized chips at high speed, a technique known as laser lift-off is used, in which a laser is irradiated onto the bonding surface of a chip bonded to a transfer substrate to cause ablation, peeling the chip from the transfer substrate and transferring it to a transfer substrate by applying a force.

[0003] Patent Document 1 discloses an element transfer device that transfers elements using ablation technology. This element transfer device uses a laser irradiation device that includes a laser light source that generates a laser beam, a reflecting means that reflects the laser beam from the laser light source in a required direction, and a control means that controls the irradiation and non-irradiation of the laser beam in conjunction with the reflecting means. The laser beam is selectively irradiated onto some of the elements arranged on a transfer substrate, causing ablation (ablation) of the layer that holds the elements. This selective ablation transfers some of the elements onto the transfer substrate. In other words, the elements are transferred from the transfer substrate to the transfer substrate by laser lift-off.

[0004] Furthermore, Patent Document 2 discloses a technology in which a laser beam is irradiated onto a blistering layer provided on a transfer substrate and having an adhesive layer on the surface side, thereby generating blisters (bulges) in the blistering layer, and the occurrence of these blisters pushes out an item (element) adhered to the adhesive layer, thereby separating the item from the transfer substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-041500 [Patent Document 2] Special Publication No. 2014-515883 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the element transfer devices disclosed in Patent Documents 1 and 2, the force holding the element on the transfer substrate (original substrate) is stronger than the force separating the element even after laser irradiation, which may result in the element not peeling off from the transfer substrate. In particular, when blisters form due to ablation at the portion of the transfer substrate that holds the element, as shown in FIG. 11 , even if a blister 130 is formed by irradiating a blistering layer 124 holding one element 121 on the transfer substrate 122 with a laser, the contact area between the blistering layer 124 and the element 121 remains large, and the force holding the element 121 at this contact surface (e.g., adhesive force) may exceed the force separating the element 121 (e.g., kinetic energy associated with blister formation, gravity), resulting in the element 121 not peeling off from the transfer substrate 122. As a result, the element 121 is not transferred to the transfer substrate 123 having the catch layer 125, and instead returns to the transfer substrate 122 as the blister 130 shrinks.

[0007] SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a transfer apparatus and a transfer method that can reliably peel an element from a transfer substrate and transfer it to a transferee substrate. [Means for solving the problem]

[0008] In order to solve the above problem, the transfer device of the present invention is a transfer device that transfers an element held on a transfer substrate to a transferee substrate, and has an energy irradiation unit that irradiates active energy rays toward the element through the transfer substrate while the transfer substrate and the transferee substrate are facing each other with the element sandwiched between them, the transfer substrate has a blistering layer in which blisters are formed by irradiation with the active energy rays, the element is held on the blistering layer, the transferee substrate has a catch layer that can hold the element, and the catch layer is arranged to face the transfer substrate, and the energy irradiation unit forms the blister in an element holding region, which is a region in the blistering layer that holds one element, thereby changing the inclination of the element with respect to the transfer substrate and bringing it closer to the transferee substrate, so that a part of the element advances and contacts the catch layer while the blistering layer holds the element.

[0009] By using the transfer device of the present invention, the inclination of the element relative to the transfer substrate is changed while the element is brought closer to the transferee substrate, making it easier for at least a portion of the element to come into contact with the catch layer compared to when the element is brought closer to the transferee substrate while remaining parallel to the transfer substrate, and the element can be transferred to the transferee substrate from that point.

[0010] Preferably, the blisters will shrink over time.

[0011] By doing so, the blistering layer naturally peels off from the element that comes into contact with the catch layer, without having to wait for the transfer substrate and the transferee substrate to separate.

[0012] It is also preferable that the blister be formed so that the center of the blister is located in the peripheral portion of the element holding region other than the center thereof.

[0013] By doing so, even when a single blister is formed, it is possible to create a state in which the element is inclined relative to the transfer substrate.

[0014] Preferably, at least two blisters are formed in sequence within the element holding region.

[0015] By doing so, the element can be stably maintained in a state in which it is tilted relative to the transfer substrate.

[0016] Furthermore, when large blisters and small blisters having different volumes are formed within the element holding area, it is preferable that the small blisters are formed first, and when the element is tilted by the small blister, the large blister is formed at a position where the distance between the transfer substrate and the element is smaller than the position where the small blister is formed.

[0017] By doing so, a part of the element is peeled off from the blistering layer due to the formation of small blisters before a large tilt is formed by the large blister, so that the load applied to the element when the large blister is formed can be reduced.

[0018] Preferably, three or more blisters having different volumes are formed in the element holding region and arranged in order of volume.

[0019] By doing so, the state in which the element is tilted relative to the transfer substrate can be maintained more stably.

[0020] Furthermore, it is preferable that large and small blisters of different volumes are formed in the element holding region so as to be connected to each other, and that the large blister expands toward the transfer substrate as gas in the small blister moves into the large blister.

[0021] By doing so, as the large blister expands toward the transfer substrate, the inclination of the element becomes greater than before expansion, and the entire element approaches the catch layer, so that the element can be transferred to the transfer substrate more reliably.

[0022] Preferably, the large blister and the small blister are connected via a thin linear blister.

[0023] This makes it possible to easily form a state in which the large blisters and the small blisters are connected to each other.

[0024] Furthermore, in order to solve the above-mentioned problems, a transfer device of the present invention is a transfer device that transfers an element held on a transfer substrate to a transferee substrate, and includes an energy irradiation unit that irradiates active energy rays toward the element through the transfer substrate while the transfer substrate and the transferee substrate are opposed to each other with the element sandwiched therebetween, the transfer substrate has a blistering layer in which blisters are formed by irradiation with the active energy rays, the element being held by the blistering layer, the transferee substrate has a catch layer capable of holding the element, and the catch layer is disposed opposite the transfer substrate, the energy irradiation unit forms large and small blisters of different volumes in an element holding region that is an area in the blistering layer that holds one element, so that the large blister and the small blister are connected to each other, and gas in the small blister moves into the large blister, causing the large blister to expand toward the transferee substrate, thereby bringing the element into contact with the catch layer while the blistering layer holds the element.

[0025] With the transfer device of the present invention, as the large blister expands toward the transfer substrate, the entire element comes closer to the catch layer than before expansion, so the element can be transferred to the transfer substrate more reliably.

[0026] Furthermore, in order to solve the above-mentioned problems, a transfer method of the present invention is a transfer method for transferring an element held on a transfer substrate to a transferee substrate, the transfer method including an energy irradiation step in which, with the transfer substrate and the transferee substrate facing each other with the element sandwiched therebetween, active energy rays are irradiated toward the element through the transfer substrate, thereby peeling the element from the transfer substrate and moving it to the transferee substrate, the transfer substrate having a blistering layer in which blisters are formed by the irradiation of the active energy rays, the element being held by the blistering layer, the transferee substrate having a catch layer capable of holding the element, the catch layer being disposed opposite the transfer substrate, and the energy irradiation step is characterized in that the blister is formed in an element holding region, which is a region in the blistering layer that holds one element, thereby changing the inclination of the element with respect to the transfer substrate and bringing it closer to the transferee substrate, thereby causing a part of the element to advance and contact the catch layer while the blistering layer holds the element.

[0027] According to the transfer method of the present invention, by changing the inclination of the element relative to the transfer substrate and bringing it closer to the transferee substrate, it becomes easier for at least a portion of the element to come into contact with the catch layer compared to when the element approaches the transferee substrate while remaining parallel to the transfer substrate, and the element can be transferred to the transferee substrate from that point.

[0028] Furthermore, in order to solve the above-mentioned problems, a transfer method of the present invention is a transfer method for transferring an element held on a transfer substrate to a transferee substrate, the method comprising an energy irradiation step of irradiating an active energy ray toward the element through the transfer substrate while the transfer substrate and the transferee substrate are opposed to each other with the element sandwiched therebetween, thereby peeling the element from the transfer substrate and moving it to the transferee substrate, the transfer substrate comprising a blistering layer in which blisters are formed by the irradiation of the active energy ray, the element being held by the blistering layer, the transferee substrate comprising a catch layer capable of holding the element, the catch layer being disposed opposite the transfer substrate, the energy irradiation step forming a large blister and a small blister having different volumes in an element holding region, which is a region in the blistering layer that holds one element, so that the large blister and the small blister are connected to each other, and gas in the small blister moves into the large blister, causing the large blister to expand toward the transferee substrate, thereby bringing the element into contact with the catch layer while the blistering layer holds the element.

[0029] According to the transfer method of the present invention, as the large blister expands toward the substrate to be transferred, the entire element comes closer to the catch layer compared to before expansion, so that the element can be transferred to the substrate to be transferred more reliably. [Effects of the Invention]

[0030] The transfer device and transfer method of the present invention make it possible to reliably peel an element from a transfer substrate and transfer it to a transfer substrate. [Brief explanation of the drawings]

[0031] [Figure 1] FIG. 2 is a diagram illustrating a transfer device according to an embodiment of the present invention. [Figure 2] 1A and 1B are diagrams illustrating a transfer substrate and a transferee substrate before an element is transferred in the present invention. [Figure 3] 1A to 1C are diagrams illustrating an embodiment of a transfer method using a transfer device of the present invention. [Figure 4]FIG. 2 is a diagram showing a transfer substrate and a transferee substrate after a predetermined time has elapsed since irradiation with active energy rays. [Figure 5] 10A to 10C are diagrams illustrating a transfer method according to another embodiment of the present invention. [Figure 6] 10A to 10C are diagrams illustrating a transfer method according to another embodiment of the present invention. [Figure 7] 7A to 7C are diagrams illustrating the process of change in blister shape in the transfer method of FIG. 6. [Figure 8] 10A to 10C are diagrams illustrating a transfer method according to another embodiment of the present invention. [Figure 9] 10A to 10C are diagrams illustrating a transfer method according to another embodiment of the present invention. [Figure 10] 10A to 10C are diagrams illustrating a transfer method according to another embodiment of the present invention. [Figure 11] 1A and 1B are diagrams illustrating an example in which element transfer fails in a conventional transfer method. DETAILED DESCRIPTION OF THE INVENTION

[0032] A transfer device according to one embodiment of the present invention will be described with reference to Figures 1 and 2. Figure 1 is a diagram illustrating the transfer device according to one embodiment of the present invention, and Figure 2 is a diagram showing a transfer substrate and a transferee substrate before element transfer according to the present invention, where Figure 2(a) is a front view and Figure 2(b) is a view taken along the arrow AA in Figure 2(a).

[0033] The transfer device 10 includes a laser irradiation unit 12 that irradiates laser light 11, a transfer substrate holding unit 13 that holds a transfer substrate 22 and is movable at least in the X-axis and Y-axis directions, a transferee substrate holding unit 14 that is located below the transfer substrate holding unit 13 and holds a transferee substrate 23 so as to face the transfer substrate 22 with a gap, and a control unit (not shown).By irradiating the transfer substrate 22 with laser light 11, ablation is caused in the transfer substrate, and an element 21 is transferred from the transfer substrate 22 to the transferee substrate 23.

[0034] The laser irradiation unit 12 is an embodiment of the energy irradiation unit of the present invention, and is a device that irradiates laser light 11, such as an excimer laser, which is an active energy ray. The laser irradiation unit 12 is fixedly installed in the transfer device 10. In this embodiment, the laser irradiation unit 12 irradiates spot-shaped laser light 11. The irradiation position of the laser light 11 in the X-axis direction and the Y-axis direction is controlled by a control unit via a galvanometer mirror 15 and an fθ lens 16, the angles of which are adjusted by a control unit. The laser light 11 is selectively irradiated onto a plurality of elements 21 arranged on a transfer substrate 22 held by a transfer substrate holder 13. When the laser light 11 is incident on the vicinity of the elements 21 through the transfer substrate 22, ablation occurs between the transfer substrate 22 and the elements 21 due to the application of active energy (light energy). This ablation energizes the elements 21, and the elements 21 are transferred from the transfer substrate 22 to the transferee substrate 23. In this description, the elements 21 are, for example, semiconductor chips.

[0035] The transfer substrate gripper 13 has an opening and sucks and grips the vicinity of the outer periphery of the transfer substrate 22. The laser light 11 emitted from the laser irradiation unit 12 can be applied to the transfer substrate 22 held by the transfer substrate gripper 13 through this opening.

[0036] The transfer substrate 22 is a substrate made of glass or the like that is capable of transmitting the laser beam 11, and holds the element 21 on its underside. As shown in Fig. 2(a), a blistering layer 24 is formed on the surface of the transfer substrate 22 that holds the element 21, and the surface of the blistering layer 24 has adhesiveness. The adhesive force of the surface of the blistering layer 24 serves as a holding force for the element 21, adhesively holding the element 21.

[0037] Furthermore, the transfer substrate gripping part 13 is moved relative to the transferred substrate gripping part 14 in at least the X-axis direction and the Y-axis direction by a movement mechanism (not shown). A control part (not shown) controls this movement mechanism to adjust the position of the transfer substrate gripping part 13, thereby adjusting the relative position of the element 21 held on the transfer substrate 22 with respect to the transferred substrate 23.

[0038] The transferred substrate gripping unit 14 has a flat upper surface, and during the transfer process of the elements 21, grips the transferred substrate 23 so that the blistering layer 24 of the transfer substrate 22 and the elements 21 held by the blistering layer 24 face the transferred surface of the transferred substrate 23. The transferred substrate gripping unit 14 has a plurality of suction holes on its upper surface, and grips the back surface of the transferred substrate 23 (the surface to which the elements 21 are not transferred) by suction force.

[0039] Here, the transfer substrate 23 in this embodiment is a substrate made of a material such as glass, and as shown in Figure 2(a), an adhesive catch layer 25 is provided on the transfer surface (the surface that receives the element 21), which adhesively holds the element 21 transferred from the transfer substrate 22.

[0040] In this embodiment, only the transfer substrate holding part 13 moves in the X-axis and Y-axis directions, thereby causing the transfer substrate holding part 13 and the transferred substrate holding part 14 to move relative to each other. However, if the dimensions of the transferred substrate 23 are large and the entire surface of the transferred substrate 23 cannot be positioned directly under the irradiation range of the laser light 11, the transferred substrate holding part 14 may also be provided with a movement mechanism in the X-axis and Y-axis directions.

[0041] In the transfer device 10 having the above configuration, the transfer substrate 22 and the transferee substrate 23 are opposed to each other with the element 21 sandwiched therebetween. Laser light 11 is irradiated toward the element 21 through the transfer substrate 22. The blistering layer 24 is irradiated with the laser light 11, causing the energy of the laser light 11 to decompose a portion of the material of the blistering layer 24 and generate gas. This decomposition of the material of the blistering layer 24 and the generation of gas generate blisters (gas bubbles) 30 within the blistering layer 24 or between the glass surface 22a of the transfer substrate 22 and the blistering layer 24, as shown in FIG. 1 . The phenomenon of blisters 30 being generated in this manner is referred to as blistering. The region of the blistering layer 24 that holds the element 21, as indicated by the double-line hatching in FIG. 2(b), is referred to as the element-holding region 24a.

[0042] An embodiment of a transfer method using the transfer device of the present invention will be described with reference to Fig. 3. Fig. 3(a) shows the state of the blistering layer from the same perspective as the arrow view of Fig. 2(a), and Fig. 3(b) is a front view including the transfer substrate and the transferred substrate.

[0043] As shown in Figure 3(a), when laser light 11, which is an active energy ray, is irradiated to point C in the element holding region 24a of the blistering layer 24, blistering occurs in a part of the element holding region 24a centered on point C, and a blister 30 is formed.

[0044] In this way, the distance from glass surface 22a to the surface of adhesive blistering layer 24 in the portion where blistering has occurred is greater than the distance from glass surface 22a to the surface of blistering layer 24 in the portion before blistering has occurred. Therefore, when blistering occurs in blistering layer 24 in element holding region 24a, element 21 moves away from glass surface 22a of transfer substrate 22 while being held by the surface portion of blistering layer 24.

[0045] In this embodiment, a transfer substrate 23 is provided adjacent to the element 21 so as to face it at a predetermined distance, and therefore, when blistering occurs, the element 21 approaches the catch layer 25 of the transfer substrate 23 while being held on the surface portion of the blistering layer 24.

[0046] In this embodiment, only one blister 30 is formed in the element holding region 24a, and the blister 30 is formed so that its center is located on the periphery of the element holding region 24a, i.e., a position other than the center (the dashed-dotted line portion in FIGS. 3(a) and 3(b)). This allows the element 21, held by the blistering layer 24, to be separated from the transfer substrate 22 while changing its inclination relative to the transfer substrate 22, as shown in FIG. 3(b). When the element 21 is inclined relative to the transfer substrate 22 in this manner, the element 21 has a portion P that is relatively close to the transfer substrate 22 and a portion Q that is relatively far from the transfer substrate 22. Compared to a case in which the blister 30 is formed in the center of the element holding region 24a and the element 21 is separated while remaining parallel to the transfer substrate 22, the portion Q is located farther from the transfer substrate 22. Therefore, the portion Q is more likely to reach the catch layer 25 of the transfer substrate 23 first and come into contact with the catch layer 25.

[0047] Portion Q of element 21 comes into contact with catch layer 25 first, and as a result, at least a portion of element 21 is adhesively held to catch layer 25. Here, if the adhesive holding force of element 21 by catch layer 25 is greater than the adhesive holding force of element 21 by blistering layer 24, when catch layer 25 and blistering layer 24 separate and pull element 21 together, blistering layer 24 peels off from element 21, and catch layer 25 holds the entire surface of element 21. In other words, transfer of element 21 from transfer substrate 22 to transferee substrate 23 is completed.

[0048] In this way, by forming blisters 30 in the element holding area 24a in the blistering layer 24, the element 21 is tilted relative to the transfer substrate 22 while being brought closer to the transferee substrate 23, making it easier for at least a portion of the element 21 to come into contact with the catch layer 25 compared to when the element 21 is brought closer to the transferee substrate 23 while remaining parallel to the transfer substrate 22, and the element 21 can be transferred to the transferee substrate 23 from that point.

[0049] Furthermore, in the present invention, in which the blistering layer 24 is brought into contact with the catch layer 25 while holding the element 21, i.e., in the case in which the element 21 is transferred from the transfer substrate 22 to the transferee substrate 23 while always being held by something, the transfer is carried out with less influence of air resistance and with good positional accuracy compared to conventional laser lift-off, in which the element is first detached from the transfer substrate and then dropped onto the transferee substrate.

[0050] Next, FIG. 4 shows the transfer substrate and the transferee substrate after a predetermined time has elapsed since the active energy rays were irradiated as shown in FIG.

[0051] The gas that formed the blisters 30 by irradiation with active energy rays may shrink due to a decrease in the temperature of the blisters 30 or may diffuse into the blistering layer 24, causing the blisters 30 to tend to shrink. In this case, after irradiation of all of the elements 21 on the transfer substrate 22 with active energy rays is complete, the blistering layer 24 naturally peels off from the elements 21 in contact with the catch layer 25 as the blisters 30 shrink, without having to wait for the timing to separate the transfer substrate 22 from the transferee substrate 23, and the transfer of the elements 21 is completed.

[0052] Next, a transfer method according to another embodiment of the present invention will be described with reference to Fig. 5. Fig. 5(a) shows the state of the blistering layer from the same perspective as the arrow view in Fig. 2(a), and Fig. 5(b) is a front view including the transfer substrate and the transferred substrate.

[0053] In this embodiment, two locations within the element holding region 24a are irradiated with the laser beam 11 to form two blisters (a large blister 30a and a small blister 30b), each with a different volume. Such blisters with different volumes can be formed by varying the power of the laser beam 11 required to form each blister, the number of times of irradiation, etc. Furthermore, in this embodiment, the blisters are formed in order from smallest to largest volume.

[0054] In this way, at least two blisters having different volumes, i.e., different heights from the glass surface 22a, separate the element 21 from the glass surface 22a so that it is tilted relative to the transfer substrate 22, and this separated state can be maintained more stably compared to when there are fewer blisters.

[0055] Furthermore, in this embodiment, when large blisters 30a and small blisters 30b with different volumes are formed in the element holding region 24a, the small blisters 30b are formed first, and when the element 21 is tilted by the small blisters 30b, the large blister 30a is formed at a position where the distance between the transfer substrate 22 and the element 21 is smaller than the position where the small blisters 30b were formed, as shown in Figure 5(b). By doing so, part of the element 21 is peeled off from the blistering layer 24 by the formation of the small blisters 30b before a large tilt is formed by the large blister 30a, and therefore the load on the element 21 when the large blister 30a is formed can be reduced.

[0056] Furthermore, the plurality of blisters may have the same volume. In this case, by forming the blisters in one direction in order from the blister located at the end of the element holding region 24a, the inclination of the element 21 can be increased with each blister formed.

[0057] Here, the number of blisters formed in the element holding region 24a is not limited to two, and may be three or more. In this case, by forming the blisters in the element holding region 24a so that they are arranged in order of volume, the element 21 can be maintained in a state of being tilted relative to the transfer substrate 22 more stably.

[0058] Next, a transfer method according to still another embodiment of the present invention will be described with reference to FIG.

[0059] In this embodiment, two blisters (large blister 30c and small blister 30d) of different volumes are formed in element holding region 24a. Large blister 30c and small blister 30d are connected and communicate with each other at connecting portion 31. Furthermore, blistering layer 24 has some elasticity, and the state formed by large blister 30c, small blister 30d, and the blistering layer 24 surrounding them resembles the state in which the openings of two balloons inflated to different sizes are connected.

[0060] When the openings of two balloons inflated to different sizes are connected, the internal pressure of the smaller balloon is higher than that of the larger balloon, so the smaller balloon behaves as if it were becoming smaller, causing the gas inside the balloon to move toward the larger balloon, and the larger balloon becomes even larger.

[0061] The process of blister shape change in the transfer method of this embodiment will now be described with reference to Figures 7(a) and 7(b). The large blister 30c and small blister 30d connected to each other in this embodiment also exhibit behavior similar to the two balloons described above, and as shown in the transition from Figure 7(a) to Figure 7(b), the gas in small blister 30d moves into large blister 30c, causing small blister 30d to become even smaller and large blister 30c to become even larger.

[0062] As the large blister 30c becomes larger in this way, it expands toward the transfer substrate 23, and the height dimension of the large blister 30c changes from H1 to H1+ΔH as shown in Fig. 7(b). Accordingly, the inclination of the element 21 becomes even larger, and a configuration is formed in which at least a portion of the element 21 contacts the catch layer 25, as shown by portion Q in Fig. 7(b).

[0063] 7, in this embodiment, each blister is formed at the boundary between the glass surface 22a of the transfer substrate 22 and the blistering layer 24, and the adhesive strength between the blistering layer 24 and the glass surface 22a is greater than the tension in the blistering layer 24 around each blister. In this case, as the volume of the large blister 30c increases, the diameter D1 remains almost unchanged, and the change in volume contributes mainly to an increase in height. In other words, the aspect ratio of the large blister 30c increases.

[0064] By expanding the large blister 30c in the direction in which the aspect ratio increases in this way, the increase in height ΔH becomes larger than when the dimensions simply increase in all directions, and it is possible to increase the inclination of the element 21. Furthermore, when forming a blister of a predetermined height, the volume can be made relatively small, which makes it possible to reduce the power of the irradiated laser beam 11, the number of irradiations, etc.

[0065] In this embodiment, when large blister 30c and small blisters 30d with different volumes are formed in element holding region 24a, small blister 30d is formed first, and when element 21 is tilted by small blister 30d, large blister 30c is formed at a position where the distance between transfer substrate 22 and element 21 is smaller than the position where small blister 30d is formed, as shown in Figure 7(a). This makes the tilt of element 21 caused by the expansion of large blister 30c more pronounced, and makes it possible to reduce the power of laser light 11, the number of irradiations, and the like, required to allow portion Q of element 21 to reach catch layer 25.

[0066] Next, a transfer method according to still another embodiment of the present invention will be described with reference to FIG.

[0067] In this embodiment, the blistering layer 24 forming the element holding region 24a is irradiated with laser light 11 so that four blisters 30e, 30f, 30g, and 30h of different volumes are formed in order of volume along a diagonal line of the element holding region 24a. Adjacent blisters are connected to each other by connecting portions 32, which are thin linear blisters.

[0068] Even when two or more blisters are connected in this manner, gas moves from the smaller blisters to the larger ones, as in the previous embodiment. Gas moves from the smallest blister 30h to the second-smallest blister 30g, then from blister 30g to the second-largest blister 30f, and then from blister 30f to the largest blister 30e. Finally, all of the gas in the blisters other than the largest blister 30e contributes to the expansion of blister 30e, allowing the power of the irradiated laser beam 11 and the number of irradiations to be reduced compared to when a blister of the same height as the expanded blister 30e is formed using a single blister. In this case, the order of blisters formation is blister 30h, blister 30g, blister 30f, blister 30e, and each connecting portion 32.

[0069] Furthermore, by forming multiple blisters along the diagonal line, which is the longest line segment within the rectangular element holding region 24a, as in this embodiment, more blisters can be arranged, and the height dimension of the largest blister (blister 30e) can be made larger.

[0070] Furthermore, as in this embodiment, thin line-shaped connecting portions 32 are formed by irradiating laser light 11, and blisters are connected to each other by these connecting portions 32, so that a configuration in which blisters are connected to each other can be easily formed.

[0071] Next, a transfer method according to still another embodiment of the present invention will be described with reference to FIG.

[0072] In this embodiment, the largest blister 30i is formed in the center of the element holding region 24a, and blisters 30j are formed on all four sides thereof so as to be connected to blister 30i via connecting portions 32. In this way, it is not necessary for the blisters to be connected one-to-one, and multiple blisters may be connected to one blister.

[0073] In this embodiment, since the blister 30i is provided in the center of the element holding area 24a, the element 21 does not tilt relative to the transfer substrate 22 as in the previous embodiment. However, the presence of the blister 30j that supplies gas to the blister 30i causes the blister 30i to expand, bringing the element 21 closer to the catch layer 25 and increasing the possibility of contact with the catch layer 25.

[0074] Furthermore, in this embodiment, gas moves from the multiple blisters 30j to the blister 30i, so compared to when there is only one blister 30j, the volume of the blister 30i increases and the extent to which it expands toward the transfer substrate 23 increases. This brings the element 21 even closer to the catch layer 25, increasing the possibility that the element 21 will come into contact with the catch layer 25.

[0075] Next, a transfer method according to still another embodiment of the present invention will be described with reference to FIG.

[0076] In this embodiment, blisters 30k are formed in the element holding region 24a, and thin wire-like connecting portions 33 are arranged vertically and horizontally so as to be directly or indirectly connected to the blisters 30k. Gas can also move from these connecting portions 33 to the blisters 30k, and the volume of the blisters 30k increases, allowing them to expand toward the transfer substrate 23.

[0077] The above-described transfer device and transfer method make it possible to reliably peel the element from the transfer substrate and transfer it to the transfer substrate.

[0078] The transfer device and transfer method of the present invention are not limited to the above-described embodiments, and may be of other embodiments within the scope of the present invention. For example, although the blistering layer and the catch layer hold the element by adhesive force in the above description, the element may be held by a holding force other than adhesive force. [Explanation of symbols]

[0079] 10 Transcription device 11 Laser light (active energy rays) 12 Laser light source (energy irradiation unit) 13 Transfer substrate holder 14 Transferred substrate gripping part 15 Galvanometer mirror 16 Fθ lens 21 elements 21a Bump 22 Transfer substrate 22a Glass surface 23 Transferred substrate 24 Blistering Layer 24a Element holding area 30, 30e, 30f, 30g, 30h, 30i, 30j, 30k Blister 30a, 30c Large Blister 30b, 30d small blister 31 Connecting part 32 Connecting part 33 Connecting part 121 elements 122 Transfer substrate 123 Transferred substrate 124 Blistering Layer 125 Catch layer 130 Blister

Claims

1. A transfer apparatus that transfers an element held on a transfer substrate to a transfer substrate, an energy irradiation unit that irradiates active energy rays toward the element through the transfer substrate in a state where the transfer substrate and the transferee substrate face each other with the element sandwiched therebetween; the transfer substrate has a blistering layer on which blisters are generated by irradiation with the active energy rays, and the element is held by the blistering layer; the transfer substrate includes a catch layer capable of holding an element, and the catch layer is disposed so as to face the transfer substrate; The transfer device is characterized in that the energy irradiation unit forms the blister within an element holding area, which is an area in the blistering layer that holds one element, thereby changing the inclination of the element relative to the transfer substrate and bringing it closer to the transfer substrate, thereby causing a portion of the element to advance and contact the catch layer while the blistering layer holds the element.

2. The transfer device of claim 1 , wherein the blister shrinks over time.

3. 3. The transfer device according to claim 1, wherein the blister is formed so that the center of the blister is located at a peripheral portion other than the center of the element holding region.

4. 4. The transfer device according to claim 1, wherein at least two of the blisters are formed in sequence within the element holding area.

5. 5. The transfer device according to claim 4, wherein when large blisters and small blisters of different volumes are formed in the element holding area, the small blisters are formed first, and when the element is tilted by the small blister, the large blister is formed at a position where the distance between the transfer substrate and the element is smaller than the position where the small blister is formed.

6. 6. The transfer device according to claim 4, wherein three or more blisters having different volumes are formed in the element holding region and arranged in order of volume.

7. 7. The transfer device according to claim 4, wherein a large blister and a small blister of different volumes are formed in the element holding area so as to be connected to each other, and the large blister expands toward the transfer substrate when gas in the small blister moves into the large blister.

8. 8. The transfer device according to claim 7, wherein the large blister and the small blister are connected via a thin linear blister.

9. A transfer apparatus that transfers an element held on a transfer substrate to a transfer substrate, an energy irradiation unit that irradiates active energy rays toward the element through the transfer substrate in a state where the transfer substrate and the transferee substrate face each other with the element sandwiched therebetween; the transfer substrate has a blistering layer on which blisters are generated by irradiation with the active energy rays, and the element is held by the blistering layer; the transfer substrate includes a catch layer capable of holding an element, and the catch layer is disposed so as to face the transfer substrate; The transfer device is characterized in that the energy irradiation unit forms large and small blisters of different volumes so that they are connected to each other within an element holding area, which is an area in the blistering layer that holds one element, and gas within the small blister moves into the large blister, causing the large blister to expand toward the transfer substrate, thereby bringing the element into contact with the catch layer while the blistering layer holds the element.

10. A transfer method for transferring an element held on a transfer substrate to a transfer substrate, comprising: an energy irradiation step of irradiating an active energy ray through the transfer substrate toward the element in a state where the transfer substrate and the transferee substrate face each other with the element sandwiched therebetween, thereby peeling the element from the transfer substrate and moving it to the transferee substrate; the transfer substrate has a blistering layer on which blisters are generated by irradiation with the active energy rays, and the element is held by the blistering layer; the transfer substrate includes a catch layer capable of holding an element, and the catch layer is disposed so as to face the transfer substrate; A transfer method characterized in that, in the energy irradiation process, a blister is formed within an element holding area, which is an area in the blistering layer that holds one element, thereby changing the inclination of the element relative to the transfer substrate and bringing it closer to the transfer substrate, so that a portion of the element is brought into advance contact with the catch layer while the blistering layer holds the element.

11. A transfer method for transferring an element held on a transfer substrate to a transfer substrate, comprising: an energy irradiation step of irradiating an active energy ray through the transfer substrate toward the element in a state where the transfer substrate and the transferee substrate face each other with the element sandwiched therebetween, thereby peeling the element from the transfer substrate and moving it to the transferee substrate; the transfer substrate has a blistering layer on which blisters are generated by irradiation with the active energy rays, and the element is held by the blistering layer; the transfer substrate includes a catch layer capable of holding an element, and the catch layer is disposed so as to face the transfer substrate; A transfer method characterized in that, in the energy irradiation process, large and small blisters of different volumes are formed so as to be connected to each other in an element holding area, which is an area in the blistering layer that holds one element, and gas in the small blister moves into the large blister, causing the large blister to expand toward the transfer substrate, thereby bringing the element into contact with the catch layer while the blistering layer holds the element.

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