Optical Module

Abstract

To provide an optical module which has high controllability of current and can be made compact.SOLUTION: An optical module comprises: a pedestal part 20 that has a bottom face part facing a surface of a stem 1 and a side face part 20b along a vertical direction; a submount 30 that is arranged on the side face 20 and formed from a plate-like member; a semiconductor optical integrated element 50 that is arranged on the submount 30 and comprises a semiconductor laser part 50a, an optical modulator part 50b, and an optical amplifier part 50c; and a semiconductor laser capacitor 60, an optical modulator capacitor 61, and an optical amplifier capacitor 62 that are respectively connected to the semiconductor laser part 50a, the optical modulator part 50b, and the optical amplifier part 50c. The semiconductor laser capacitor 60, the optical modulator capacitor 61, and the optical amplifier capacitor 62 are arranged on the side face side 20b in order from the bottom face part along the side face part in a direction perpendicular to the surface of the stem 1 of the submount 30 arranged on the side face part 20b.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to optical modules. [Background technology]

[0002] In recent years, the spread of various information terminals and the shift to cloud computing have led to an increase in data traffic. To meet the growing demand for data traffic, efforts are being made to increase the transmission speed and capacity within optical fiber communication base stations.

[0003] Semiconductor optical integrated devices that monolithically integrate a semiconductor laser section, an optical modulator section, and an optical amplifier section are used as light sources for long-distance optical communications such as optical fiber communications (Patent Document 1). The optical modulator section is a type of external modulator, and since it causes less degradation of the signal waveform compared to direct modulation methods that directly modulate the laser light intensity, it enables high-speed, long-distance optical fiber transmission. In addition, the optical amplifier section functions to amplify the modulated light. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2022-099537 Summary of the Invention [Problem to be solved by the invention]

[0005] In the optical module described in Patent Document 1, a single capacitor is used as both the semiconductor laser section and the optical amplifier section, and the semiconductor optical integrated element is mounted obliquely relative to the direction perpendicular to the surface of the stem.

[0006] In the optical module described in Patent Document 1, the semiconductor laser section and the optical amplifier section are electrically connected in parallel, so the same current flows through the semiconductor laser section and the optical amplifier section, which poses a practical problem in that it is difficult to control the two sections independently.

[0007] The present disclosure has been made to solve the above-mentioned problems, and aims to provide an optical module that has high current controllability and can be made compact. [Means for solving the problem]

[0008] The optical module according to the present disclosure comprises: CAN package and a stem, which is one of the components that make up the CAN package; a base portion disposed on the surface side of the stem, the base portion having a bottom surface facing the surface of the stem and a side surface extending in a direction perpendicular to the surface of the stem; a submount disposed on a side surface of the base; a semiconductor optical integrated device mounted on the submount and including, from the front surface side of the stem, a semiconductor laser section, an optical modulator section, and an optical amplifier section, each of which is electrically independent from the others; The wires are directly connected, The semiconductor laser portion of the semiconductor optical integrated device The aforementioned a capacitor for the semiconductor laser portion electrically connected via a wire; The wires are directly connected, The optical modulator of the semiconductor optical integrated device The aforementioned a capacitor for the optical modulator section electrically connected via a wire; The wires are directly connected, The optical amplifier section of the semiconductor optical integrated device The aforementioned a capacitor for the optical amplifier section electrically connected via a wire, The submount is made of a plate-like member, and the capacitor for the semiconductor laser section, the capacitor for the optical modulator section, and the capacitor for the optical amplifier section are arranged in this order from the bottom side of the pedestal along the side surface of the stem of the submount installed on the side surface of the pedestal in a direction perpendicular to the surface of the stem. Align It is characterized by being arranged [Effects of the Invention]

[0009] According to the optical module of the present disclosure, current flows independently through capacitors electrically connected to the semiconductor laser section, the optical modulator section, and the optical amplifier section of the semiconductor optical integrated device mounted thereon, thereby achieving the effect of obtaining an optical module that has high current controllability and can be made compact. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic view of an optical module according to a first embodiment. [Figure 2] FIG. 1 is a side view of an optical module according to a first embodiment. [Figure 3] FIG. 1 is a side view of an optical module according to a first embodiment. [Figure 4] 1 is a cross-sectional view of a semiconductor optical integrated device that is a part of an optical module according to a first embodiment. [Figure 5] 1 is a schematic view of a CAN package that is a part of the optical module according to the first embodiment. [Figure 6] FIG. 10 is a schematic view of an optical module according to a second embodiment. [Figure 7] FIG. 10 is a side view of the optical module according to the second embodiment. [Figure 8] FIG. 10 is a side view of the optical module according to the second embodiment. [Figure 9] FIG. 11 is a schematic view of an optical module according to a third embodiment. [Figure 10] FIG. 11 is a side view of an optical module according to a third embodiment. [Figure 11] FIG. 11 is a side view of an optical module according to a third embodiment. [Figure 12] FIG. 10 is a schematic view of an optical module according to a fourth embodiment. [Figure 13] FIG. 10 is a side view of an optical module according to a fourth embodiment. [Figure 14] FIG. 10 is a side view of an optical module according to a fourth embodiment. [Figure 15] FIG. 10 is a schematic view of an optical module according to a fifth embodiment. [Figure 16] FIG. 10 is a side view of an optical module according to a fifth embodiment. [Figure 17] FIG. 10 is a side view of an optical module according to a fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Embodiment 1 Fig. 1 is a schematic view of an optical module 100 according to the first embodiment. Fig. 2 and Fig. 3 are side views of the optical module 100 according to the first embodiment.

[0012] The stem 1 is generally circular and plate-shaped. The stem 1 is made of a material with high thermal conductivity, such as copper (Cu), and has a surface that is plated with Au. The stem 1 is provided with a plurality of lead pins 2a to 2f that penetrate the stem 1.

[0013] Glass 3 is generally used to secure lead pins 2a to 2f to stem 1. If there is impedance mismatch, multiple reflections of the signal will cause deterioration of the frequency response characteristics, making high-speed modulation difficult. Therefore, glass 3 is made of a material with a low dielectric constant.

[0014] A temperature control module 10 is disposed on the surface 1a of the stem. The surface 1a of the stem refers to the flat surface of the stem 1, which is a circular plate, from which the lead pins 2a to 2f partially protrude. The temperature control module 10 is configured such that a plurality of thermoelectric elements made of a material such as bismuth telluride (BiTe) are sandwiched between a lower substrate and an upper substrate made of a material such as aluminum nitride (AlN). The lower substrate of the temperature control module 10 has a protruding portion that protrudes further than the upper substrate in a direction parallel to the surface 1a of the stem. Electrode patterns 10a and 10b for supplying power to the thermoelectric elements (not shown) are provided on this protruding portion. The temperature control module 10 is provided to control the temperature of a semiconductor optical integrated device 50, which will be described later. The temperature control module 10 may be omitted from the optical module 100 according to the first embodiment.

[0015] A pedestal 20 is installed on the surface of the temperature control module 10. A bottom surface 20a of the pedestal faces the surface 1a of the stem via the temperature control module 10. The bottom surface 20a of the pedestal and the surface of the temperature control module 10 are joined by a joining material such as SnAgCu solder or AuSn solder.

[0016] The base 20 has side surfaces 20b and 20c. The base 20 is made of a block of metal material, for example, Cu or another material with high thermal conductivity, with Au plating applied to the surface. The base 20, which is a separate part from the stem 1, may be mounted on the stem 1, or the stem 1 and the base 20 may be integrally molded.

[0017] The submount 30 is mounted on the side surface 20b of the base. The submount 30 is, for example, a rectangular parallelepiped plate-like member made of a dielectric material. The submount 30 is made of a ceramic material such as AlN and has electrical insulation and heat transfer functions. The submount 30 has a main surface and a back surface opposite each other, and four side surfaces. The back surface of the submount 30 is mounted on the side surface 20b of the base. A metal pattern is patterned on the main surface of the submount 30.

[0018] A semiconductor optical integrated device 50 is mounted on the main surface side of the submount 30. As shown in the cross-sectional view of FIG. 4, the semiconductor optical integrated device 50 comprises a semiconductor laser section 50a, an optical modulator section 50b, and an optical amplifier section 50c. These sections are arranged in the order of the semiconductor laser section 50a, the optical modulator section 50b, and the optical amplifier section 50c from the bottom surface 20a side of the pedestal. The semiconductor laser section 50a, the optical modulator section 50b, and the optical amplifier section 50c are electrically independent from each other. The semiconductor optical integrated device 50 is mounted in an oblique direction relative to the direction perpendicular to the surface 1a of the stem.

[0019] The semiconductor laser section 50a of the semiconductor optical integrated device 50 is, for example, a distributed feedback semiconductor laser (DFB laser). The optical modulator section 50b of the semiconductor optical integrated device 50 is, for example, an electroabsorption optical modulator using an InGaAsP-based quantum well absorption layer. The optical amplifier section 50c of the semiconductor optical integrated device 50 is, for example, an InGaAsP-based optical amplifier.

[0020] Because the oscillation wavelength of the semiconductor optical integrated device 50 fluctuates with changes in temperature, it is necessary to maintain as constant as possible the temperature of the semiconductor optical integrated device 50. When the temperature of the semiconductor optical integrated device 50 rises, the temperature control module 10 cools it, and when the temperature of the semiconductor optical integrated device 50 drops, the temperature control module 10 generates heat, thereby maintaining the temperature of the semiconductor optical integrated device 50 constant.

[0021] Heat generated by the operation of the semiconductor optical integrated device 50 is transferred to the upper substrate of the temperature control module 10 via the submount 30. The temperature control module 10 absorbs the heat generated by the semiconductor optical integrated device 50. The heat absorbed by the temperature control module 10 is dissipated from the lower substrate of the temperature control module 10 through the stem 1 to a heat sink (not shown) on the back side of the stem 1.

[0022] In the semiconductor optical integrated device 50, a capacitor 60 for the semiconductor laser section, a capacitor 61 for the optical modulator section, and a capacitor 62 for the optical amplifier section are arranged in this order on the side surface 20b of the base along the side surface perpendicular to the surface 1a of the stem of the submount 30 mounted on the side surface 20b of the base from the bottom surface 20a side of the base.

[0023] The thermistor 55 is mounted on the side surface 20c of the pedestal opposite to the side surface 20b of the pedestal on which the submount 30 is mounted. The thermistor 55 is a type of temperature sensor, and indirectly measures the temperature of the semiconductor integrated optical device 50. The temperature measured by the thermistor 55 is fed back to the temperature control module 10. The temperature control module 10 controls the temperature of the semiconductor integrated optical device 50 based on the temperature measured by the thermistor 55, thereby stabilizing the temperature of the semiconductor integrated optical device 50. As a result, a constant oscillation wavelength can be stably obtained.

[0024] The lead pin 2a is electrically connected to the thermistor 55 via a conductive wire W1. The lead pin 2b is electrically connected to the semiconductor laser section capacitor 60 via a conductive wire W2. The lead pin 2c is electrically connected to the optical amplifier section capacitor 62 via a conductive wire W3. The lead pin 2d is electrically connected to the electrode pattern 10a of the temperature control module 10 via a conductive wire W4. The lead pin 2e is electrically connected to the electrode pattern 10b of the temperature control module 10 via a conductive wire W5. The lead pin 2f is first electrically connected to the electrode pattern 80a of the auxiliary substrate 80 fixed to the side of the auxiliary block 79, and then electrically connected to the optical modulator section 50b of the semiconductor optical integrated device 50 via the electrode pattern 30e on the submount 30. Note that in FIGS. 2 and 3, the arrangement of the conductive wires and electrode patterns is the same as in FIG. 1, and therefore the reference numerals for the conductive wires and electrode patterns are omitted to avoid complication.

[0025] The capacitor 60 for the semiconductor laser section is first electrically connected to the electrode pattern 30a on the submount 30 via a conductive wire W6, and is further electrically connected to the semiconductor laser section 50a of the semiconductor optical integrated device 50 via a conductive wire W7.

[0026] The capacitor 61 for the optical modulator section is first electrically connected to the electrode pattern 30b on the submount 30 via a conductive wire W8, and is further electrically connected to the optical modulator section 50b of the semiconductor optical integrated device 50 via a conductive wire W9.

[0027] The capacitor 62 for the optical amplifier section is first electrically connected to the electrode pattern 30c on the submount 30 via a conductive wire W10, and is further electrically connected to the optical amplifier section 50c of the semiconductor optical integrated device 50 via a conductive wire W11.

[0028] Electrode pattern 80a of auxiliary substrate 80 is electrically connected to electrode pattern 30e on submount 30 via conductive wire W23. Electrode pattern 80b of auxiliary substrate 80 is electrically connected to electrode pattern 30d on submount 30 via conductive wire W21. Electrode pattern 80c of auxiliary substrate 80 is electrically connected to electrode pattern 30f on submount 30 via conductive wire W22.

[0029] The optical module 100 according to the first embodiment uses a CAN package 90 as shown in Fig. 5. That is, the temperature control module 10, the base 20, the submount 30, the auxiliary block 79, the auxiliary substrate 80, and the like, which are provided on the front surface 1a of the stem, are housed inside the CAN case 91. Note that lead pins 2 protrude from the rear surface of the stem 1.

[0030] The optical module 100 according to the first embodiment employs the above-described configuration, and therefore, current control of each of the semiconductor laser section 50a, the optical modulator section 50b, and the optical amplifier section 50c can be individually controlled via the capacitor 60 for the semiconductor laser section, the capacitor 61 for the optical modulator section, and the capacitor 62 for the optical amplifier section, respectively, thereby providing high controllability of the drive current for the semiconductor optical integrated device 50. In other words, an effect is achieved in which the current controllability of the optical module 100 according to the first embodiment is improved.

[0031] Furthermore, since the capacitor 60 for the semiconductor laser section, the capacitor 61 for the optical modulator section, and the capacitor 62 for the optical amplifier section are arranged in this order on the side surface 20b of the base along the side surface perpendicular to the surface 1a of the stem of the submount 30 installed on the side surface 20b of the base from the bottom surface 20a side of the base, it is possible to achieve the effect of making it possible to miniaturize the optical module.

[0032] <Advantages of First Embodiment> As described above, according to the optical module of the first embodiment, current flows independently through capacitors electrically connected to the semiconductor laser section, the optical modulator section, and the optical amplifier section of the semiconductor optical integrated device to be mounted, respectively, which has the effect of providing high controllability of the current, and also providing an optical module that can be made compact because the capacitors are arranged in order on the side surface of the base.

[0033] Embodiment 2 Fig. 6 is a schematic view of an optical module 110 according to the second embodiment. Figs. 7 and 8 are side views of the optical module 110 according to the second embodiment. The following description will focus on the differences from the optical module 100 according to the first embodiment. In Figs. 6 to 8, the arrangement of the conductive wires and electrode patterns is the same as in the first embodiment, and therefore the reference numerals are omitted to avoid complication.

[0034] 6 and 8, in the optical module 110 according to the second embodiment, the capacitor 61 for the optical modulator section is disposed on the submount 30. Furthermore, the capacitor 60 for the semiconductor laser section and the capacitor 62 for the optical amplifier section are disposed on the surface of the upper substrate of the temperature control module 10, respectively.

[0035] By arranging the capacitors as described above, the width along the side surface 20b of the base can be made smaller than that of the optical module 100 according to embodiment 1. In other words, the CAN package 90 that houses the stem 1, temperature control module 10, base 20, submount 30, auxiliary block 79, auxiliary substrate 80, etc. of the optical module 110 can be made smaller.

[0036] Alternatively, the temperature control module 10 may have the same area as the bottom surface 20a of the base, and the capacitor 60 for the semiconductor laser section and the capacitor 62 for the optical amplifier section may be directly disposed on the surface 1a of the stem.

[0037] <Advantages of the Second Embodiment> As described above, according to the optical module of the second embodiment, current flows independently through capacitors electrically connected to the semiconductor laser section, optical modulator section, and optical amplifier section of the semiconductor optical integrated device to be mounted, which has the effect of providing high controllability of the current. In addition, since the capacitor for the optical modulator section is disposed on the submount, and the capacitor for the semiconductor laser section and the capacitor for the optical amplifier section are disposed on the temperature control module, an optical module that can be further miniaturized can be obtained.

[0038] Embodiment 3 Fig. 9 is a schematic view of an optical module 120 according to the third embodiment. Figs. 10 and 11 are side views of the optical module 120 according to the third embodiment. The following description will focus on differences from the optical module 100 according to the first embodiment. In Figs. 9 to 11, the arrangement of the conductive wires and electrode patterns is the same as in the first embodiment, and therefore, to avoid complication, reference numerals other than those for parts necessary for the description are omitted.

[0039] 9 to 11, in the optical module 120 according to the third embodiment, the base 20 has a rectangular parallelepiped shape. In addition, parts of the electrode patterns 30a and 30c on the submount 30 are also provided on the side surfaces of the submount 30.

[0040] 9 to 11, in the optical module 120 according to the third embodiment, the capacitor 61 for the optical modulator section is disposed on the submount 30. The capacitor 60 for the semiconductor laser section and the capacitor 62 for the optical amplifier section are each disposed on the side surface 20d of the pedestal. The side surface 20d of the pedestal is the side surface closer to the capacitor 61 for the optical modulator section out of two side surfaces perpendicular to the side surface 20b and the side surface 20c of the pedestal that face each other.

[0041] That is, the capacitor 61 for the optical modulator section is placed on the submount 30, and the capacitor 60 for the semiconductor laser section and the capacitor 62 for the optical amplifier section are placed on the other side surface 20d of the base along the side surface 20b of the base on which the submount 30 is placed.

[0042] The reason why a portion of the electrode pattern 30a and a portion of the electrode pattern 30c are also provided on the side surface of the submount 30 is that such an arrangement is necessary in order to connect, with conductive wires, the capacitor 60 for the semiconductor laser section mounted on the side surface 20d of the pedestal and the electrode pattern 30a, and the capacitor 62 for the optical amplifier section and the electrode pattern 30c. In other words, it is technically difficult to directly connect, with conductive wires, each capacitor mounted on the side surface 20d of the pedestal and the semiconductor optical integrated device 50 mounted on the side surface 20b of the pedestal.

[0043] By arranging the capacitors as described above, it is possible to reduce the width along the side surface 20b of the base compared to the structure of the optical module 100 according to the first embodiment. In other words, it is possible to reduce the size of the CAN package 90 that houses the stem 1, temperature control module 10, base 20, submount 30, auxiliary block 79, auxiliary substrate 80, etc. of the optical module 120.

[0044] Instead of providing portions of the electrode patterns 30a and 30c on the submount 30 on the side surfaces of the submount 30, small conductive blocks may be bonded onto the electrode patterns 30a and 30c of the submount 30, respectively, and these conductive blocks may be connected to the semiconductor laser section capacitor 60 and the optical amplifier section capacitor 62 by conductive wires.

[0045] <Advantages of the Third Embodiment> As described above, according to the optical module of the third embodiment, current flows independently through capacitors electrically connected to the semiconductor laser section, optical modulator section, and optical amplifier section of the mounted semiconductor optical integrated device, which has the effect of providing high controllability of the current. In addition, since the capacitor for the optical modulator section is disposed on the submount, and the capacitor for the semiconductor laser section and the capacitor for the optical amplifier section are disposed on the other side sections of the base, an optical module that can be further miniaturized can be obtained.

[0046] Embodiment 4 Fig. 12 is a schematic view of an optical module 130 according to the fourth embodiment. Figs. 13 and 14 are side views of the optical module 130 according to the fourth embodiment. The following description will focus on differences from the optical module 100 according to the first embodiment. In Figs. 12 to 14, the arrangement of the conductive wires and electrode patterns is the same as in the first embodiment, and therefore the reference numerals are omitted to avoid complication.

[0047] 12 to 14, the arrangement of the capacitors in the optical module 130 according to the fourth embodiment is the same as that in the optical module 100 according to the first embodiment. The optical module 130 according to the fourth embodiment is characterized in that the cross section of the side surface 20d of the base along the side surface 20b of the base on which the submount 30 is mounted is L-shaped.

[0048] By making the cross section of the side surface 20d of the base part L-shaped, it is possible to reduce the height of the base part 20 from the surface 1a of the stem compared to the height of the base part of the optical module 100 according to the first embodiment. As a result, it is possible to reduce the size of the CAN package 90 that houses the stem 1, temperature control module 10, base part 20, submount 30, auxiliary block 79, auxiliary substrate 80, etc. of the optical module 130.

[0049] <Advantages of the Fourth Embodiment> As described above, according to the optical module of the fourth embodiment, current flows independently through capacitors electrically connected to the semiconductor laser section, the optical modulator section, and the optical amplifier section of the semiconductor optical integrated device to be mounted, which has the effect of providing high controllability of the current, and the cross-sectional shape of the side surface of the base section is L-shaped, which has the effect of providing an optical module that can be further miniaturized.

[0050] Embodiment 5 Fig. 15 is a schematic view of an optical module 140 according to embodiment 4. Figs. 16 and 17 are side views of the optical module 140 according to embodiment 4. In Figs. 15 to 17, the arrangement of the conductive wires and electrode patterns is the same as in embodiment 1, and therefore the reference numerals are omitted to avoid complication.

[0051] 15 and 17, the optical module 140 according to the fifth embodiment is characterized in that it does not have the pedestal 20, but instead the submount 30 also serves as the pedestal. The arrangement of each capacitor is the same as that of the optical module 100 according to the first embodiment.

[0052] In the optical module 140 according to the fifth embodiment, there is no need to provide the base 20 as in the first to fourth embodiments, and therefore the number of components of the optical module can be reduced. Furthermore, since the height of the submount 30 is lower than the height of the base 20 in the first to fourth embodiments, the CAN package 90 that houses the stem 1, temperature control module 10, submount 30, auxiliary block 79, auxiliary substrate 80, etc. of the optical module 140 can be made smaller.

[0053] <Advantages of the Fifth Embodiment> As described above, according to the optical module of the fifth embodiment, current flows independently through capacitors electrically connected to the semiconductor laser section, the optical modulator section, and the optical amplifier section of the semiconductor optical integrated device to be mounted, which has the effect of providing high controllability of the current, and since the base section can be omitted, the number of components of the optical module can be reduced, resulting in an optical module that can be made smaller and less expensive.

[0054] Although the present disclosure describes various exemplary embodiments and examples, the various features, aspects, and functions described in one or more embodiments are not limited to application to a particular embodiment, but may be applied to the embodiments alone or in various combinations.

[0055] Therefore, countless variations not illustrated are conceivable within the scope of the technology disclosed in the present specification, including, for example, cases where at least one component is modified, added, or omitted, and cases where at least one component is extracted and combined with components of another embodiment. [Explanation of symbols]

[0056] 1 stem, 1a stem surface, 2, 2a, 2b, 2c, 2d, 2e, 2f lead pin, 3 glass, 10 temperature control module, 10a, 10b, 30a, 30b, 30c, 30d, 30e, 30f, 80a, 80b, 80c electrode pattern, 20 base portion, 20a base bottom portion, 20b, 20c, 20d base side portion, 30 submount, 50 semiconductor optical integrated element, 50a semiconductor laser portion, 50b optical modulator portion, 50c optical amplifier portion, 55 thermistor, 60 semiconductor laser portion capacitor, 61 optical modulator portion capacitor, 62 optical amplifier portion capacitor, 79 auxiliary block, 80 auxiliary board, 90 CAN package, 91 CAN case, 100, 110, 120, 130, 140 Optical module, W1, W2, W3, W4, W5, W6, W7, W8, W9, W10, W11, W21, W22, W23 Conductive wire

Claims

1. a CAN package; a stem, which is one of the components constituting the CAN package; a base portion disposed on the surface side of the stem, the base portion having a bottom surface facing the surface of the stem and a side surface extending in a direction perpendicular to the surface of the stem; a submount disposed on a side surface of the base; a semiconductor optical integrated device mounted on the submount and including, from the front surface side of the stem, a semiconductor laser section, an optical modulator section, and an optical amplifier section, each of which is electrically independent from the others; a capacitor for a semiconductor laser portion, which is directly connected to a wire and electrically connected to a semiconductor laser portion of the semiconductor optical integrated device via the wire; a capacitor for an optical modulator section, which is directly connected to a wire and electrically connected to the optical modulator section of the semiconductor optical integrated device via the wire; a capacitor for an optical amplifier section to which a wire is directly connected and which is electrically connected via the wire to the optical amplifier section of the semiconductor optical integrated device, The submount is made of a plate-like member, and the capacitor for the semiconductor laser section, the capacitor for the optical modulator section, and the capacitor for the optical amplifier section are aligned in order on the side of the base section from the bottom side of the base section along the side of the base section in a direction perpendicular to the surface of the stem of the submount installed on the side of the base section.

2. a CAN package; a stem, which is one of the components constituting the CAN package; a submount disposed on the surface side of the stem, the submount having a bottom surface facing the surface of the stem and a side surface extending in a direction perpendicular to the surface of the stem; a semiconductor optical integrated device mounted on the submount and including, from the front surface side of the stem, a semiconductor laser section, an optical modulator section, and an optical amplifier section, each of which is electrically independent from the others; a capacitor for a semiconductor laser portion, which is directly connected to a wire and electrically connected to a semiconductor laser portion of the semiconductor optical integrated device via the wire; a capacitor for an optical modulator section, which is directly connected to a wire and electrically connected to the optical modulator section of the semiconductor optical integrated device via the wire; a capacitor for an optical amplifier section to which a wire is directly connected and which is electrically connected via the wire to the optical amplifier section of the semiconductor optical integrated device, The submount is made of a plate-like member, and a capacitor for the semiconductor laser section, a capacitor for the optical modulator section, and a capacitor for the optical amplifier section are aligned in order from the stem along the side of the submount in a direction perpendicular to the surface of the stem.

3. 2. The optical module according to claim 1, wherein a temperature control module is provided between the stem and the base.

4. 3. The optical module according to claim 2, wherein a temperature control module is provided between the stem and the submount.

5. 2. The optical module according to claim 1, wherein the cross section of the pedestal portion along the side surface on which the submount is mounted is L-shaped.

6. 6. The optical module according to claim 1, wherein the semiconductor optical integrated device is disposed at an angle with respect to a direction perpendicular to the surface of the stem.

7. The wire directly connected to the capacitor for the semiconductor laser section is further electrically connected to an electrode pattern, and the electrode pattern is electrically connected to the semiconductor laser section via another wire, the wire directly connected to the capacitor for the optical modulator section is further electrically connected to an electrode pattern, and the electrode pattern is electrically connected to the optical modulator section via another wire; An optical module according to any one of claims 1 to 5, characterized in that the wire directly connected to the capacitor for the optical amplifier section is further electrically connected to an electrode pattern, and the electrode pattern is electrically connected to the optical amplifier section via another wire.

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