Manufacturing method for vertical cavity surface emitting laser element and vertical cavity surface emitting laser element

By alternating the growth of semiconductor layers with varying indium composition ratios, the method addresses dislocation issues in vertical cavity surface emitting laser elements, improving efficiency and reducing light loss.

JP7737020B2Active Publication Date: 2025-09-10NICHIA CORP
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Patent Information

Application Number
JP2022533714
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-06-30
Filing Date
2021-05-13
Publication Date
2025-09-10
Estimated Expiration
2041-05-13

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Abstract

The purpose of the present invention is to provide a vertical resonator-type surface emitting laser element which can inhibit dislocation nucleation in a semiconductor layer constituting a reflecting mirror comprising a semiconductor multilayer film, and a manufacturing method for said element. This manufacturing method for a vertical resonator-type surface emitting laser element comprises: a step for growing a first semiconductor layer 1 comprising a group-III nitride semiconductor including Al and In; and a step for growing a second semiconductor layer 2 comprising gallium nitride. The step for growing the first semiconductor layer 1 comprises a first growth step and a second growth step. The first growth step involves supplying an Al source gas, an In source gas, and a nitrogen source gas to grow a first layer 11, whereas the second growth step involves supplying an Al source gas, an In source gas, and a nitrogen source gas to grow a second layer 12 which has a higher In composition ratio than the first layer 11. Through alternate repetition of the steps for growing the first semiconductor layer 1 and for growing the second semiconductor layer 2, a first reflecting mirror 10 including a nitride semiconductor multilayer film is formed.
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Citation Information

Patent Citations

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