Light-emitting element and visual inspection method

Abstract

To provide a light-emitting element whose visual inspection is easy, and a visual inspection method.SOLUTION: A light-emitting element 1 includes an n-type semiconductor layer 23, an active layer 24 formed on the n-type semiconductor layer 23, a p-type semiconductor layer 25 formed on the active layer 24, a p-side electrode 3 formed on the p-type semiconductor layer 25, and an n-side electrode 4 formed on the n-type semiconductor layer 23. In at least one of the p-side electrode 3 and the n-side electrode 4, an observation hole 40 that can be observed when the light-emitting element 1 is viewed either from above or below is formed. In a visual inspection method, the light-emitting element 1 is evaluated based on the comparison between the size of the observation hole 40 and the size of a defect recognized when the light-emitting element 1 is viewed from above and below.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a light-emitting element and an appearance inspection method. [Background technology]

[0002] Patent Document 1 discloses a method for inspecting the appearance of a light emitting device. In the method, the presence or absence of a defect in the light emitting device is determined based on the ambient brightness when the light emitting device is made to emit light. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-20983 Summary of the Invention [Problem to be solved by the invention]

[0004] In the appearance inspection method described in Patent Document 1, the presence or absence of a defect cannot be determined unless the light emitting device is energized to emit light.

[0005] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light-emitting element and an appearance inspection method that allow easy appearance inspection. [Means for solving the problem]

[0006] In order to achieve the above-mentioned object, the present invention provides a light-emitting element comprising an n-type semiconductor layer, an active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, a p-side electrode formed on the p-type semiconductor layer, and an n-side electrode formed on the n-type semiconductor layer, wherein an observation hole is formed in at least one of the p-side electrode and the n-side electrode, allowing the light-emitting element to be observed from either the top or the bottom.

[0007] In order to achieve the above-mentioned object, the present invention provides an appearance inspection method for visually inspecting the presence or absence of defects in a light-emitting element, wherein the light-emitting element comprises an n-type semiconductor layer, an active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, a p-side electrode formed on the p-type semiconductor layer, and an n-side electrode formed on the n-type semiconductor layer, and at least one of the p-side electrode and the n-side electrode has an observation hole formed in it that allows the light-emitting element to be observed when viewed from either the top or the bottom, and the light-emitting element is evaluated by comparing the size of the observation hole with the size of defects confirmed when the light-emitting element is viewed from both the top and the bottom. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a light emitting device and an appearance inspection method that allow for easy appearance inspection. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view of a light-emitting element according to a first embodiment. [Figure 2] FIG. 2 is a bottom view of the light emitting element according to the first embodiment. [Figure 3] FIG. 3 is a cross-sectional view taken along the line III-III in FIG. [Figure 4] FIG. 3 is a cross-sectional view of a first intermediate body in the first embodiment. [Figure 5] FIG. 4 is a cross-sectional view of a second intermediate body in the first embodiment. [Figure 6] FIG. 4 is a cross-sectional view of a third intermediate body in the first embodiment. [Figure 7] FIG. 10 is a cross-sectional view of a fourth intermediate body in the first embodiment. [Figure 8] FIG. 10 is a cross-sectional view of a fifth intermediate body in the first embodiment. [Figure 9] FIG. 10 is a plan view of a light-emitting element according to a second embodiment. [Figure 10] FIG. 10 is a plan view of a light-emitting element according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] [First embodiment] A first embodiment of the present invention will be described with reference to Figures 1 to 8. The embodiment described below is shown as a preferred specific example for carrying out the present invention, and although various technically preferable technical matters are specifically exemplified, the technical scope of the present invention is not limited to this specific embodiment.

[0011] (Light-emitting element 1) Fig. 1 is a plan view of the light-emitting element 1 in this embodiment. Fig. 2 is a bottom view of the light-emitting element 1. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 1. In Figs. 1 and 2, parts that are not on the outermost surface but are visible through a transparent member are indicated by thin solid lines, and parts that are hidden behind a non-transparent member and cannot be seen are indicated by dashed lines.

[0012] The light-emitting element 1 of this embodiment is, for example, a light-emitting diode (LED: Light Emitting Diode) or a semiconductor laser (LD: Laser Diode). The light-emitting element 1 can be, for example, a deep-ultraviolet LED that emits deep-ultraviolet light, and can be used in fields such as sterilization (e.g., air purification, water purification, etc.), medical treatment (e.g., phototherapy, measurement and analysis, etc.), UV curing, etc. The light-emitting element 1 of this embodiment includes a stacked structure 2, a p-side electrode 3, an n-side electrode 4, and a covering member 5.

[0013] As shown in Fig. 3, the stacked structure 2 has a substrate 21, a buffer layer 22, an n-type semiconductor layer 23, an active layer 24, and a p-type semiconductor layer 25, in this order. Hereinafter, the stacking direction of the stacked structure 2 will be referred to as the vertical direction Z, the side of the p-type semiconductor layer 25 relative to the n-type semiconductor layer 23 will be referred to as the upper side, and the opposite side will be referred to as the lower side. Note that the expressions "upper" and "lower" are for convenience and do not limit the position of the light-emitting element 1 relative to the vertical direction, for example, when the light-emitting element 1 is in use. Furthermore, the light-emitting element 1 has a rectangular outer shape when viewed from the vertical direction Z, and the directions along this outer shape will be referred to as the horizontal direction X (e.g., the left-right direction in Figs. 1 and 2) and the vertical direction Y (e.g., the up-down direction in Figs. 1 and 2).

[0014] The substrate 21 has a property of transmitting light (deep ultraviolet light in this embodiment) emitted by the active layer 24. The substrate 21 may be, for example, a sapphire (Al2O3) substrate. Alternatively, the substrate 21 may be, for example, an aluminum nitride (AlN) substrate or an aluminum gallium nitride (AlGaN) substrate.

[0015] The semiconductors constituting the buffer layer 22, the n-type semiconductor layer 23, the active layer 24, and the p-type semiconductor layer 25 are, for example, Al. x Ga y In 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) can be used. In deep ultraviolet LEDs, Al containing no indium can be used. z Ga 1-z The N series (0≦z≦1) is often used.

[0016] The buffer layer 22 is formed on the substrate 21. The buffer layer 22 is made of undoped Al a Ga 1-aIt consists of N (0 ≤ a ≤ 1). As an example, the buffer layer 22 has an AlN layer made of aluminum nitride (i.e., a = 1) formed on the substrate 21 and an AlGaN layer made of undoped aluminum gallium nitride (i.e., 0 < a < 1) formed on the AlN layer. Note that it is not limited to this, and the buffer layer 22 can be a single layer or three or more layers. Also, when the substrate 21 is an aluminum nitride substrate or an aluminum gallium nitride substrate, the buffer layer 22 does not necessarily have to be provided.

[0017] The n-type semiconductor layer 23 is formed on the buffer layer 22. The n-type semiconductor layer 23 consists of Al b Ga 1-b N (0 ≤ b ≤ 1). The n-type semiconductor layer 23 may have a single-layer structure or a multi-layer structure.

[0018] The active layer 24 is formed on a part of the upper surface of the n-type semiconductor layer 23. The active layer 24 consists of Al c Ga 1-c N (0 ≤ c ≤ 1), and can be, for example, a single quantum well structure having one well layer or a multiple quantum well structure having multiple well layers. In the active layer 24, electrons supplied from the n-type semiconductor layer 23 and holes supplied from the p-type semiconductor layer 25 recombine and emit light. The active layer 24 is configured such that the bandgap is 3.4 eV or more in order to output deep ultraviolet light with a wavelength of 365 nm or less. For example, the central wavelength of the light emitted by the active layer 24 can be 200 nm or more and 365 nm or less. Also, the active layer 24 may emit deep ultraviolet light with a central wavelength of 290 nm or less.

[0019] The p-type semiconductor layer 25 is formed on the active layer 24. The p-type semiconductor layer 25 consists of Al d Ga 1-d N (0 ≤ d ≤ 1). The p-type semiconductor layer 25 may have a single-layer structure or a multi-layer structure.

[0020] In this embodiment, the side surfaces of the active layer 24 and the p-type semiconductor layer 25 are inclined so that the widths of the active layer 24 and the p-type semiconductor layer 25 become narrower toward the upper side. That is, the n-type semiconductor layer 23, the active layer 24, and the p-type semiconductor layer 25 are formed to have a mesa structure. In addition, in the stacked structure 2, at least the substrate 21, the buffer layer 22, and the n-type semiconductor layer 23 are transparent to visible light.

[0021] The p-side electrode 3 includes a p-side contact electrode 31 that is in ohmic contact with the upper surface of the p-type semiconductor layer 25, and a p-side pad electrode 32 that is formed on the p-side contact electrode 31 and is electrically connected to a mounting substrate (e.g., a submount substrate) on which the light-emitting element 1 is mounted. The n-side electrode 4 includes an n-side contact electrode 41 that is in ohmic contact with a region on the upper surface of the n-type semiconductor layer 23 where the active layer 24 is not formed, and an n-side pad electrode 42 that is formed on the n-side contact electrode 41 and is electrically connected to a mounting substrate on which the light-emitting element 1 is mounted. The p-side electrode 3 and the n-side electrode 4 are opaque to visible light (i.e., colored).

[0022] 1 and 2, the p-side contact electrode 31 has a central portion 311, two vertically extending portions 312 extending from the central portion 311 to both sides in the vertical direction Y, and four diagonal extending portions 313 extending from the central portion 311 in four directions along the diagonals of the outline of the light-emitting element 1. For example, the two diagonal extending portions 313 located on the left side of FIG. 1 are electrically connected to the p-side pad electrode 32.

[0023] The p-type semiconductor layer 25 and the active layer 24 located below the p-side contact electrode 31 are also formed in a region overlapping with the p-side contact electrode 31 in the vertical direction Z. That is, the p-type semiconductor layer 25 and the active layer 24 have the same outer shape as the p-side contact electrode 31 when viewed in the vertical direction Z.

[0024] In this embodiment, the light-emitting element 1 is flip-chip mounted on a mounting substrate, and light is mainly extracted from the substrate 21 side. The p-side contact electrode 31 has a reflective electrode that reflects light emitted from the active layer 24. The reflective electrode has a reflectivity of, for example, 50% or more, preferably 80% or more, for light emitted from the active layer 24. The reflective electrode may include, for example, a layer made of rhodium (Rh). When the p-side contact electrode 31 includes a reflective electrode and the p-type semiconductor layer 25 includes a p-type contact layer made of p-type GaN, it is preferable to make the film thickness of the p-type contact layer thin, for example, 20 nm or less. Since p-type GaN has a relatively high light absorption rate, reducing the film thickness of the p-type contact layer made of p-type GaN makes it easier for light reflected by the p-side contact electrode 31 to be extracted from the substrate 21 side, thereby improving the light output of the light-emitting element 1. The p-side contact electrode 31 does not necessarily have to include a reflective electrode. The p-side contact electrode 31 may have a single-film structure or a multi-film structure. Furthermore, the light emitting element 1 may be mounted face up on a mounting substrate so that light is extracted from the side opposite to the substrate 21.

[0025] When viewed from the vertical direction Z, the n-side contact electrode 41 is formed to surround the p-side contact electrode 31 at a certain distance D. The outer shape of the n-side contact electrode 41 is formed in a rectangular shape that matches the outer shape of the light-emitting element 1. For example, a portion of the n-side contact electrode 41 located on the right side in FIG. 1 is electrically connected to the n-side pad electrode 42. An observation hole 40 is formed in the n-side contact electrode 41 and the n-side pad electrode 42, which will be described later.

[0026] Each of the p-side contact electrode 31 and the n-side contact electrode 41 has a rotationally symmetric shape except for the observation hole 40. Specifically, each of the p-side contact electrode 31 and the n-side contact electrode 41 has a rotationally symmetric shape except for the observation hole 40.

[0027] The p-side pad electrode 32 and the n-side pad electrode 42 are formed side by side in the lateral direction X. The p-side pad electrode 32 is electrically connected to the p-side contact electrode 31, and the n-side pad electrode 42 is electrically connected to the n-side contact electrode 41.

[0028] 3, the p-side pad electrode 32 has a p-side buried portion 321 buried inside the covering member 5 and a p-side exposed portion 322 exposed from the covering member 5 and electrically connected to a mounting substrate on which the light-emitting element 1 is mounted. The n-side pad electrode 42 has an n-side buried portion 421 buried inside the covering member 5 and an n-side exposed portion 422 exposed from the covering member 5 and electrically connected to the mounting substrate. The light-emitting element 1 is electrically connected to electrodes of the mounting substrate at the p-side exposed portion 322 and the n-side exposed portion 422 via connecting members such as bumps made of gold (Au) or the like.

[0029] As shown in FIGS. 1 to 3 , an observation hole 40 is formed in at least one of the p-side electrode 3 and the n-side electrode 4, allowing observation of the light-emitting element 1 from either the top or bottom. As shown in FIGS. 1 and 2 , in this embodiment, one observation hole 40 is formed in the n-side electrode 4, but not in the p-side electrode 3. Unlike the p-side electrode 3, the n-side electrode 4 does not have a p-type semiconductor layer 25 or an active layer 24 below it. Therefore, forming the observation hole 40 in the n-side electrode 4 improves the visibility of the observation hole 40 when viewed from below. Even if the observation hole 40 is formed in the p-side electrode 3, it is possible to improve the visibility of the observation hole 40 by forming a communication hole in the p-type semiconductor layer 25 and the active layer 24 that communicates with the observation hole 40. However, this may reduce the area of ​​the active layer 24, potentially resulting in a decrease in the output of the light-emitting element 1. From this perspective, it is preferable to form the observation hole 40 in the n-side electrode 4. Furthermore, although detailed illustration is omitted, when the n-side electrode 4 has fewer constituent layers than the p-side electrode 3, forming the observation hole 40 in the n-side electrode 4 makes it easier to form the observation hole 40 with high dimensional accuracy. Furthermore, in this embodiment, the p-side electrode 3 has a reflective electrode, and if the observation hole 40 is formed in the p-side electrode 3, the area of ​​the p-side electrode 3 will be reduced by the amount of the observation hole 40, and the total amount of light that can be reflected will also be reduced. Therefore, from the viewpoint of improving light output, it is preferable to form the observation hole 40 in the n-side electrode 4.

[0030] 1 to 3, the observation hole 40 has a first hole 401 formed in the n-side contact electrode 41 and a second hole 402 formed in the n-side pad electrode 42. The first hole 401 is a cylindrical hole having a circular cross section perpendicular to the vertical direction Z. The second hole 402 is a cylindrical hole having a circular cross section perpendicular to the vertical direction Z with a larger diameter than the first hole 401. As shown in FIG. 1, both the first hole 401 and the second hole 402 are visible when the light-emitting element 1 is viewed from above. As shown in FIG. 2, only the first hole 401 is visible when the light-emitting element 1 is viewed from below. At least one of the first hole 401 and the second hole 402 may be formed in a tapered shape, for example, decreasing in diameter toward the bottom.

[0031] By providing an observation hole 40 in the light-emitting element 1, this observation hole 40 can be used as a standard for judging defects in the visual inspection of the light-emitting element 1. In the visual inspection of the light-emitting element 1, the light-emitting element 1 is inspected for the presence of defects of a predetermined criterion size or larger when viewed from both the top and bottom, and the observation hole 40 is designed so that its smallest inner diameter portion (i.e., the portion of the light-emitting element 1 that can be observed from both the top and bottom) is this predetermined criterion size. This makes the visual inspection easier because the light-emitting element 1 and an indicator of the criterion size (i.e., the observation hole 40) are both present in the field of view during the visual inspection. Details of the visual inspection will be described later.

[0032] Here, as shown in FIG. 2 , when viewed from the opposite side to the side where the light-emitting element 1 is mounted on the mounting substrate (i.e., from the bottom), the entire light-emitting element 1, excluding the observation hole 40, has a rotationally symmetric shape. In this embodiment, the entire light-emitting element 1, excluding the observation hole 40, has a 180° rotationally symmetric shape when viewed from the bottom. However, this is not limited to this, and the light-emitting element 1 may have a rotationally symmetric shape other than 180°, such as a 90° rotationally symmetric shape. The observation hole 40 is formed so that the light-emitting element 1 has a rotationally asymmetric shape when viewed from the bottom. For example, when the observation hole 40 has a circular cross section as in this embodiment, the observation hole 40 is formed at a position offset from the center of the light-emitting element 1 when viewed from the bottom. Thus, after mounting the light-emitting element 1 on the mounting substrate, by checking the position of the observation hole 40 from the opposite side of the mounting substrate side of the light-emitting element 1, it becomes possible to determine whether the light-emitting element 1 is mounted on the mounting substrate in the desired rotational orientation or whether it is incorrectly mounted in an orientation rotated 180° from the desired rotational orientation.

[0033] 1 and 2, when viewed from the vertical direction Z, the observation hole 40 is formed at a position farther away from the edge 411 of the n-side contact electrode 41 on the p-side contact electrode 31 side than the distance D between the n-side contact electrode 41 and the p-side contact electrode 31. In other words, the shortest distance L between the observation hole 40 and the edge 411 of the n-side contact electrode 41 when viewed from the vertical direction Z and the distance D satisfy the relationship L>D. In this embodiment, the observation hole 40 is formed in a portion of the n-side contact electrode 41 that is close to a corner of the n-side contact electrode 41 and that has a relatively large area.

[0034] As shown in FIG. 3, the covering member 5 covers and protects the light-emitting element 1. The covering member 5 is transparent to visible light. It is made of an inorganic material that is electrically insulating and moisture-resistant. The covering member 5 is made of, for example, silicon dioxide (SiO2), silicon nitride (SiN), silicon carbide (SiC), or the like. The covering member 5 covers, for example, at least the surface of the light-emitting element 1 below the p-side exposed portion 322 and the n-side exposed portion 422 and above the n-type semiconductor layer 23. The covering member 5 also fills the inside of the observation hole 40 below the p-side exposed portion 322 and the n-side exposed portion 422.

[0035] (Method of manufacturing the light-emitting element 1) Next, an example of a method for manufacturing the light emitting device 1 of this embodiment will be described. The method for manufacturing the light-emitting element 1 includes a semiconductor film forming step, a first etching step, a contact electrode forming step, a second etching step, a first step of forming a pad electrode, a coating step, and a second step of forming a pad electrode. FIG. 4 is a cross-sectional view of a first intermediate 11 obtained after the semiconductor film forming step, the first etching step, and the contact electrode forming step. FIG. 5 is a cross-sectional view of a second intermediate 12 obtained after the second etching step. FIG. 6 is a cross-sectional view of a third intermediate 13 obtained after the first step of forming a pad electrode. FIG. 7 is a cross-sectional view of a fourth intermediate 14 obtained during the coating step. FIG. 8 is a cross-sectional view of a fifth intermediate 15 obtained after the coating step.

[0036] 4, in the semiconductor film formation process, first, a buffer layer 22, an n-type semiconductor layer 23, an active layer 24, and a p-type semiconductor layer 25 are formed on a substrate 21 by a well-known epitaxial growth method such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or halide vapor phase epitaxy (HVPE). Manufacturing conditions such as growth temperature, growth pressure, and growth time for epitaxially growing each semiconductor layer can be general conditions according to the configuration of each semiconductor layer.

[0037] After the semiconductor film formation step, a first etching step is performed. In the first etching step, a buffer layer 22, an n-type semiconductor layer 23, an active layer 24, and a p-type semiconductor layer 25 are formed on the substrate 21, and then a mask (not shown) is formed at a predetermined position on the upper surface of the p-type semiconductor layer 25. Then, the p-type semiconductor layer 25 and the active layer 24 formed in positions that do not overlap with the mask are removed by etching. As a result, an exposed upper surface 231 is formed on the n-type semiconductor layer 23, which is exposed from the active layer 24. After the exposed upper surface 231 is formed, the mask is removed.

[0038] After the first etching step, a contact electrode forming step is performed. In the contact electrode forming step, for example, a p-side contact electrode 31 is first formed on the p-type semiconductor layer 25, and then an n-side contact electrode 41 is formed on the exposed upper surface 231 of the n-type semiconductor layer 23. In this embodiment, the n-side contact electrode 41 is first formed without the first hole 401. The p-side contact electrode 31 and the n-side contact electrode 41 can be formed by a well-known method such as electron beam evaporation or sputtering using photolithography technology. In the contact electrode forming step, a first intermediate 11 shown in FIG. 4 is obtained.

[0039] After the contact electrode forming step, a second etching step is performed. In the second etching step, a first hole 401 is formed in the n-side contact electrode 41 by etching. In the second etching step, a second intermediate body 12 shown in FIG. 5 is obtained.

[0040] After the second etching step, the first step of forming pad electrodes is performed. In the first step of forming pad electrodes, portions of the p-side pad electrode 32 and the n-side pad electrode 42 excluding their upper end portions are formed. In the first step of forming pad electrodes, portions of the p-side pad electrode 32 and the n-side pad electrode 42 excluding their upper end portions are formed by vapor deposition using photolithography. Note that the n-side contact electrode 41 is first formed without the first hole 401, and then the first hole 401 is formed by etching, but the n-side pad electrode 42 is formed with the second hole 402 already present by photolithography. In the first step of forming pad electrodes, a third intermediate 13 shown in FIG. 6 is obtained.

[0041] After the first step of forming the pad electrodes, a covering step is performed. In the covering step, the top of the third intermediate 13 is covered with a covering member 5 made of an inorganic material such as silicon dioxide using a well-known technique such as chemical vapor deposition (CVD). At this time, the covering member 5 is also filled into the observation hole 40. The covering member 5 is also formed up to above the p-side pad electrode 32 and the n-side pad electrode 42 formed in the first step of forming the pad electrodes. In the covering step, a fourth intermediate 14 shown in FIG. 7 is obtained.

[0042] Then, the portions of the covering member 5 in the fourth intermediate body 14 where the p-side pad electrode 32 and the n-side pad electrode 42 are to be formed are removed by etching or the like, and the fifth intermediate body 15 shown in FIG. 8 is obtained.

[0043] After the covering step, a second step of forming pad electrodes is performed. In the second step of forming pad electrodes, the upper end portions of the p-side pad electrode 32 and the n-side pad electrode 42 are formed. In the second step of forming pad electrodes, the upper end portions of the p-side pad electrode 32 and the n-side pad electrode 42 are formed by vapor deposition using a photolithography technique. In the second step of forming pad electrodes, as in the first step, the n-side pad electrode 42 is formed so that the second hole 402 already exists.

[0044] As a result of the above, a wafer on which a large number of light emitting elements 1 are assembled is completed, and this wafer is divided by stealth dicing or the like to produce a large number of individual light emitting elements 1 as shown in FIGS. In this manner, the light emitting device 1 of this embodiment can be manufactured.

[0045] (Method for inspecting the appearance of light-emitting element 1) Next, we will explain an example of an appearance inspection that is performed after manufacturing the light-emitting element 1. The appearance inspection can be performed, for example, after manufacturing the light-emitting element 1 and before mounting it on a mounting board, and after mounting the light-emitting element 1 on the mounting board and before inspecting the characteristics of the light-emitting element 1.

[0046] In a visual inspection before mounting the light-emitting element 1 on the mounting board, the light-emitting element 1 is viewed from both above and below to check whether or not there are any defects of a predetermined criterion size or larger. In a visual inspection after mounting the light-emitting element 1 on the mounting board, the light-emitting element 1 is viewed from the side opposite the mounting board to check whether or not there are any defects of a predetermined criterion size or larger. A light-emitting element 1 that has a defect of a size larger than the criterion size is determined to be a defective product, and a light-emitting element 1 that does not have a defect of a size larger than the criterion size is determined to be an acceptable product. Acceptable products may proceed to the next process, for example, for shipment, while defective products may not proceed to the next process and may, for example, be discarded.

[0047] Defects inspected in the visual inspection may include, for example, point defects, line defects, hillocks, chip chips, chip scratches, and pattern peeling. Point defects, line defects, and hillocks are formed in the stacked structure 2 of the light-emitting element 1. Chip chips may be formed, for example, when a corner of the substrate 21 is chipped by hitting an object. Chip scratches may be formed, for example, like scratches caused by an object rubbing against the underside of the substrate 21. Pattern peeling may be formed when parts of the p-side electrode 3 and the n-side electrode 4 peel off.

[0048] In this embodiment, it is assumed that the judgment standard size for the various defects described above is a common size. The judgment standard size can be, for example, 50 μm or less, but is designed appropriately according to the requirements of the time. The light-emitting element 1 of this embodiment is formed so that the minimum inner diameter of the observation hole 40 (the inner diameter of the first hole portion 401 in this embodiment) matches the judgment standard size. As a result, the light-emitting element 1 itself within the field of view during visual inspection has an observation hole 40 of the same size as the judgment standard size. Therefore, the pass / fail of the visual inspection of the light-emitting element 1 can be easily determined by comparing the inner diameter of the observation hole 40 with the size of the defect. This eliminates the need to prepare a sample of the light-emitting element, such as a light-emitting element with a defect of a size equivalent to the judgment standard size, separately from the light-emitting element to be inspected.

[0049] The visual inspection may be performed visually using a microscope or the like, or automatically using an automatic inspection device. In the case of a visual inspection using an automatic inspection device, if the observation hole 40 (i.e., an indicator of the criterion size) does not exist, an image of the light-emitting element 1 having a defect of the criterion size must be registered in advance in the automatic inspection device as a comparison target, but it is difficult to create a defect of the intended size in the light-emitting element 1. On the other hand, by forming the observation hole 40, which serves as an indicator of the criterion size, in the light-emitting element 1 as in this embodiment, it is not necessary to create a defect of the intended size, and the above-mentioned registration can be easily performed. Therefore, by using the light-emitting element 1 of this embodiment, it is possible to improve the efficiency of not only visual visual inspection but also visual inspection using an automatic inspection device.

[0050] (Functions and Effects of the First Embodiment) In the light-emitting element 1 of this embodiment, an observation hole 40 that allows observation from either the top or bottom of the light-emitting element 1 is formed in at least one of the p-side electrode 3 and the n-side electrode 4. This makes it possible to use the size of the observation hole 40 as a criterion for determining whether the light-emitting element 1 is defective in a visual inspection of the light-emitting element 1.

[0051] The observation hole 40 is formed in the n-side electrode 4. Unlike the p-side electrode 3, the n-side electrode 4 does not have the p-type semiconductor layer 25 and the active layer 24 below it. Therefore, forming the observation hole 40 in the n-side electrode 4 improves the visibility of the observation hole 40 when viewed from below. If the observation hole 40 is formed in the p-side electrode 3, it is possible to improve the visibility of the observation hole 40 through a communication hole formed in the p-type semiconductor layer 25 and the active layer 24 that communicates with the observation hole 40. However, this may reduce the area of ​​the active layer 24, which may result in a decrease in the output of the light-emitting device 1. From this perspective, it is preferable to form the observation hole 40 in the n-side electrode 4. Even if the n-side electrode 4 has fewer constituent layers than the p-side electrode 3, forming the observation hole 40 in the n-side electrode 4 makes it easier to form the observation hole 40 with high dimensional accuracy. Furthermore, in this embodiment, the p-side electrode 3 has a reflective electrode. If an observation hole 40 is formed in the p-side electrode 3, the area of ​​the p-side electrode 3 will be reduced by the amount of the observation hole 40, and the total amount of light that can be reflected will also be reduced. Therefore, from the viewpoint of improving light output, it is preferable to form the observation hole 40 in the n-side electrode 4.

[0052] Furthermore, when viewed from the vertical direction Z, the p-side contact electrode 31 and the n-side contact electrode 41 are formed with a distance D between them. When viewed from the vertical direction Z, the observation hole 40 is formed at a position farther away from the edge 411 of the n-side contact electrode 41 on the p-side contact electrode 31 side than the distance D. This makes it easier to form the observation hole 40 with high dimensional accuracy. On the other hand, if the observation hole 40 is formed in a region close to the p-side contact electrode 31, the dimensional accuracy of the observation hole 40 may be reduced due to the influence of, for example, the active layer 24 and the p-type semiconductor layer 25 during deposition, etching, etc., when forming the observation hole 40.

[0053] Furthermore, the cross-sectional shape of the observation hole 40 perpendicular to the vertical direction Z is circular. This makes it possible to form a small observation hole 40. The observation hole 40 is difficult to form unless it is located in a portion of the electrode (n-side electrode 4 in this embodiment) that has a relatively large area. However, by making the observation hole 40 small, an increase in the size of the electrode, and therefore the size of the light-emitting element 1, is suppressed.

[0054] Furthermore, when viewed from the side opposite the side where the light-emitting element 1 is mounted on the mounting substrate, the portion excluding the observation hole 40 has a rotationally symmetric shape, and the observation hole 40 is formed so that the light-emitting element 1 has a rotationally asymmetric shape when viewed from the side opposite the side where the light-emitting element 1 is mounted on the mounting substrate. Therefore, it is possible to determine whether the light-emitting element 1 is mounted on the mounting substrate in a desired orientation before performing an electrical characteristic test. In particular, in this embodiment, the observation hole 40 is formed at a position offset from the center position of the light-emitting element 1 when viewed from the side opposite the side where the light-emitting element 1 is mounted on the mounting substrate. Therefore, it is possible to determine whether the light-emitting element 1 is mounted on the mounting substrate in a desired orientation based on the position of the observation hole 40.

[0055] As described above, according to the present embodiment, it is possible to provide a light emitting element and an appearance inspection method that allow easy appearance inspection.

[0056] [Second embodiment] A second embodiment of the present invention will be described with reference to Fig. 9. Fig. 9 is a plan view of a light-emitting element 1 in this embodiment.

[0057] In this embodiment, the shape of the observation hole 40 is modified from that of the first embodiment. In this embodiment, the cross-sectional shape of the observation hole 40 perpendicular to the vertical direction Z is elongated in one direction. Specifically, the cross-sectional shape of the observation hole 40 perpendicular to the vertical direction Z is formed as an ellipse elongated in the horizontal direction X. In the observation hole 40, the first hole portion 401 is formed as a relatively small ellipse, and the second hole portion 402 is formed as an ellipse slightly larger than the first hole portion 401. Note that the cross-sectional shape of the observation hole 40 is not limited to the above-mentioned one, and other elongated shapes such as a rectangle, a rectangle with rounded corners, or a diamond shape can be used.

[0058] The rest is the same as in the first embodiment. It should be noted that, among the symbols used in the second and subsequent embodiments, the same symbols as those used in the previously described embodiments represent the same components, etc. as those in the previously described embodiments, unless otherwise specified.

[0059] (Functions and Effects of the Second Embodiment) In this embodiment, the cross-sectional shape of the observation hole 40 perpendicular to the vertical direction Z is elongated in one direction. Therefore, for example, the dimension of the observation hole 40 in the major axis direction (i.e., the horizontal direction X) and the dimension of the minor axis direction (i.e., the vertical direction Y) can be used as the standards for visual inspection of the light-emitting element 1. This allows one observation hole 40 to represent two size standards, for example, when the allowable size differs depending on the type of defect. Furthermore, for example, if the allowable defect size for the light-emitting element 1 is changed from the dimension of the observation hole 40 in the minor axis direction to the dimension of the observation hole 40 in the major axis direction, the changed standard size is indicated by the observation hole 40, making it possible to perform visual inspection without being affected by the change in the standard size. For example, circular observation holes of different sizes may be formed. However, in this embodiment, two standard sizes can be represented by one observation hole 40, which prevents the manufacturing of the light-emitting element 1 from becoming complicated. In addition, the second embodiment has the same functions and effects as the first embodiment.

[0060] [Third embodiment] A third embodiment of the present invention will be described with reference to Fig. 10. Fig. 10 is a plan view of a light-emitting element 1 in this embodiment.

[0061] This embodiment is an example in which the shapes of the p-side contact electrode 31 and the n-side contact electrode 41 are changed from those of the first embodiment. In this embodiment, the p-side contact electrodes 31 are formed at four locations so as to be arranged in two rows and two columns in the vertical direction Y when viewed from the vertical direction Z. Each p-side contact electrode 31 is formed in a rectangular shape along the vertical direction Y. Furthermore, the n-side contact electrodes 41 are formed in a lattice shape surrounding the p-side contact electrodes 31 at regular intervals when viewed from the vertical direction Z.

[0062] Each of the p-side contact electrode 31 and the n-side contact electrode 41 has a rotationally symmetric shape except for the observation hole 40. Specifically, each of the p-side contact electrode 31 and the n-side contact electrode 41 has a rotationally symmetric shape except for the observation hole 40.

[0063] In this embodiment, the observation hole 40 is formed only in the n-side contact electrode 41. The observation hole 40 is formed at a position between the p-side pad electrode 32 and the n-side pad electrode 42 when viewed from the vertical direction Z (i.e., at a position that does not overlap with the p-side pad electrode 32 and the n-side pad electrode 42 in the vertical direction Z).

[0064] Furthermore, when viewed from the opposite side to the side where the light-emitting element 1 is mounted on the mounting substrate (i.e., from the bottom), the entire light-emitting element 1, excluding the observation hole 40, has a rotationally symmetric shape (specifically, 180° rotationally symmetric). The observation hole 40 is formed so that the light-emitting element 1 has a rotationally asymmetric shape when viewed from the bottom. In this embodiment, the observation hole 40 is formed at a position offset to one side in the vertical direction Y. The rest is the same as in the first embodiment.

[0065] [Operations and Effects of the Third Embodiment] In this embodiment, the observation hole 40 is formed at a position on the n-side contact electrode 41 where the n-side pad electrode 42 does not overlap in the vertical direction Z, and therefore the observation hole 40 can be easily formed. The rest is the same as in the first embodiment.

[0066] [Variations] Other possible modifications of the light emitting element will be described below.

[0067] In the first and second embodiments, the first hole portion is formed relatively small and the second hole portion is formed relatively large. However, this is not limited to this. For example, the first hole portion may be formed relatively large and the second hole portion may be formed relatively small. In this case, the inner diameter of the second hole portion is designed to be the standard size for visual inspection. The first hole portion and the second hole portion may be formed to be the same size. However, in this case, it becomes difficult to form the observation hole with high dimensional accuracy. That is, in this case, the inner diameters of the first hole portion and the second hole portion must be matched and must be formed without any misalignment in the vertical and horizontal directions, making it difficult to manufacture the observation hole with high dimensional accuracy. Therefore, it is preferable to form the second hole portion larger than the first hole portion and form the first hole portion so that it fits inside the second hole portion when viewed from above, or vice versa.

[0068] In the first and second embodiments, the observation hole is formed in only one location, but this is not limited thereto and it may be formed in multiple locations. If there are multiple criteria sizes for visual inspection of light-emitting elements, multiple observation holes are formed according to the multiple criteria sizes.

[0069] Furthermore, in the first to third embodiments, the observation hole is formed at a position shifted from the center of the light emitting element when viewed from above and below, but this is not limiting.

[0070] The shape of the observation hole can also be modified in various ways. For example, the shape of the observation hole may be a cross or T-shape with different vertical and horizontal dimensions. This will provide the same effects and advantages as the second embodiment.

[0071] Furthermore, by making the shape of the observation hole rotationally asymmetric when viewed from above and below, it becomes possible to determine the rotational attitude of the light-emitting element regardless of its position. For example, if the observation hole is cross-shaped, by making it a rotationally asymmetric cross with the horizontal bar above the vertical bar, the observation hole can be used as an indicator for determining the rotational attitude of the light-emitting element even if it is located in the center of the light-emitting element. Similarly, if the observation hole is T-shaped, it can be used as an indicator for determining the rotational attitude of the light-emitting element even if it is located in the center of the light-emitting element.

[0072] (Summary of the embodiment) Next, the technical ideas grasped from the above-described embodiments will be described by using the reference numerals and the like in the embodiments. However, the reference numerals and the like in the following description do not limit the components in the claims to the members and the like specifically shown in the embodiments.

[0073] [1] A first embodiment of the present invention is a light-emitting element 1 comprising an n-type semiconductor layer 23, an active layer 24 formed on the n-type semiconductor layer 23, a p-type semiconductor layer 25 formed on the active layer 24, a p-side electrode 3 formed on the p-type semiconductor layer 25, and an n-side electrode 4 formed on the n-type semiconductor layer 23, wherein an observation hole 40 is formed in at least one of the p-side electrode 3 and the n-side electrode 4, which allows the light-emitting element 1 to be observed from either the top or bottom. This makes it possible to easily inspect the appearance of the light-emitting element 1.

[0074] [2] A second embodiment of the present invention is the first embodiment, in which the observation hole 40 is formed in the n-side electrode 4. This makes it possible to easily inspect the appearance of the light-emitting element 1.

[0075] [3] A third embodiment of the present invention is the second embodiment, wherein the p-side electrode 3 comprises a p-side contact electrode 31 in contact with the p-type semiconductor layer 25 and a p-side pad electrode 32 formed on the p-side contact electrode 31, the n-side electrode 4 comprises an n-side contact electrode 41 in contact with the n-type semiconductor layer 23 and an n-side pad electrode 42 formed on the n-side contact electrode 41, and when viewed from the vertical direction Z, the p-side contact electrode 31 and the n-side contact electrode 41 are formed with a distance D between them, and when viewed from the vertical direction Z, the observation hole 40 is formed at a position greater than the distance D from the edge 411 of the n-side contact electrode 41 on the p-side contact electrode 31 side. This makes it easier to form the observation hole 40 with good dimensional accuracy.

[0076] [4] A fourth embodiment of the present invention is the second or third embodiment, in which the p-side electrode 3 has a reflective electrode that reflects light emitted from the active layer 24. This prevents the formation of the observation hole 40 in the reflective electrode from reducing the total amount of light reflected by the reflective electrode.

[0077] [5] A fifth embodiment of the present invention is any one of the first to fourth embodiments, wherein the cross-sectional shape of the observation hole 40 perpendicular to the vertical direction Z is circular. This makes it easier to prevent the light emitting element 1 from becoming large.

[0078] [6] A sixth embodiment of the present invention is any one of the first to fourth embodiments, in which the cross-sectional shape of the observation hole 40 perpendicular to the vertical direction Z is a shape that is elongated in one direction. This prevents the manufacturing process of the light-emitting element 1 from becoming complicated.

[0079] [7] A seventh embodiment of the present invention is any one of the first to sixth embodiments, wherein when the light-emitting element 1 is viewed from the side opposite to the side where it is mounted on the mounting substrate, the part excluding the observation hole 40 has a rotationally symmetric shape, and the observation hole 40 is formed so as to give the light-emitting element 1 a rotationally asymmetric shape when viewed from the side opposite to the side where it is mounted on the mounting substrate. This makes it easy to determine whether the light emitting element 1 is mounted on the mounting board in a desired posture.

[0080] [8] An eighth embodiment of the present invention is the seventh embodiment, wherein the observation hole 40 is formed at a position shifted from the center position of the light-emitting element 1 when viewed from the side opposite to the side where it is mounted on the mounting substrate. This makes it possible to determine, based on the position of the observation hole 40, whether or not the light-emitting element 1 is mounted on the mounting board in a desired orientation.

[0081] [9] A ninth embodiment of the present invention is a visual inspection method for visually inspecting a light-emitting element 1 for defects, wherein the light-emitting element 1 comprises an n-type semiconductor layer 23, an active layer 24 formed on the n-type semiconductor layer 23, a p-type semiconductor layer 25 formed on the active layer 24, a p-side electrode 3 formed on the p-type semiconductor layer 25, and an n-side electrode 4 formed on the n-type semiconductor layer 23, and at least one of the p-side electrode 3 and the n-side electrode 4 has an observation hole 40 formed therein that allows the light-emitting element 1 to be observed from either the top or bottom, and the light-emitting element 1 is evaluated by comparing the size of the observation hole 40 with the size of the defect confirmed when the light-emitting element 1 is viewed from either the top or bottom. This makes it easy to inspect the appearance of the light emitting element 1.

[0082] (Addendum) Although the embodiments of the present invention have been described above, the invention according to the claims is not limited to the above-described embodiments. It should be noted that not all of the combinations of features described in the embodiments are necessarily essential to the means for solving the problems of the invention. Furthermore, the present invention can be appropriately modified and implemented within the scope of its spirit. [Explanation of symbols]

[0083] 1...Light emitting element 23...n-type semiconductor layer 24…Active layer 25...p-type semiconductor layer 3...p side electrode 31...p-side contact electrode 32...p-side pad electrode 4...n side electrode 40...Observation hole 41...n-side contact electrode 42...n-side pad electrode 411...edge Z…Vertical direction

Claims

1. A light-emitting device comprising: an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer; a p-side electrode formed on the p-type semiconductor layer; and an n-side electrode formed on the n-type semiconductor layer, an observation hole is formed in the n-side electrode, through which the light-emitting element can be observed from either the top or bottom; the p-side electrode includes a p-side contact electrode in contact with the p-type semiconductor layer and a p-side pad electrode formed on the p-side contact electrode; the n-side electrode includes an n-side contact electrode in contact with the n-type semiconductor layer and an n-side pad electrode formed on the n-side contact electrode; When viewed from above and below, the p-side contact electrode and the n-side contact electrode are spaced apart from each other, when viewed from above and below, the observation hole is formed at a position farther away from an edge of the n-side contact electrode on the p-side contact electrode side than the distance between the edge and the p-side contact electrode; a first hole portion constituting the observation hole is formed in the n-side contact electrode; a second hole portion constituting the observation hole is formed in the n-side pad electrode; a covering member, a part of which is disposed inside the first hole portion and the second hole portion; Light-emitting element.

2. the p-side electrode has a reflective electrode that reflects light emitted from the active layer; The light-emitting device according to claim 1 .

3. The cross-sectional shape of the observation hole perpendicular to the vertical direction is circular. The light-emitting device according to claim 1 or 2.

4. The cross-sectional shape of the observation hole perpendicular to the vertical direction is a shape that is elongated in one direction. The light-emitting device according to claim 1 or 2.

5. the light-emitting element has a rotationally symmetric shape excluding the observation hole when viewed from the opposite side to the side where it is mounted on the mounting substrate, the observation hole is formed so as to make the light emitting element have a rotationally asymmetric shape when viewed from the side opposite to the side where the light emitting element is mounted on the mounting substrate. The light-emitting device according to claim 1 or 2.

6. the observation hole is formed at a position shifted from the center position of the light emitting element when viewed from the side opposite to the side where the light emitting element is mounted on the mounting substrate; The light-emitting device according to claim 5 .

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