Substrate Processing Equipment

Abstract

To inhibit failure caused by suction operation in processing of a substrate.SOLUTION: A substrate processing device includes at least a multiple valve which can selectively supply at least one of a processing liquid for processing a substrate and a cleaning liquid for performing cleaning; a processing liquid nozzle for discharging the processing liquid to the substrate; a connection pipe which connects the multiple valve with the processing liquid nozzle; and a suction pipe which is provided branched from the connection pipe and used to suction the inside of the connection pipe. A substrate processing method includes a step in which the cleaning liquid is supplied from the multiple valve to the suction pipe to clean the inside of the suction pipe.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The technology disclosed in this specification relates to a substrate processing technology. Substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal displays, substrates for flat panel displays (FPDs) such as organic electroluminescence (EL) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), and substrates for solar cells. [Background technology]

[0002] 2. Description of the Related Art Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as a "substrate"), various processes are performed on the substrate using a substrate processing apparatus.

[0003] In substrate processing, one or more chemical liquids are discharged onto the substrate through a nozzle, but in order to prevent dripping from the nozzle, a suction operation may be performed to suck the chemical liquid out of the nozzle (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-152375 Summary of the Invention [Problem to be solved by the invention]

[0005] The processing liquid sucked by the above-described suction operation may remain in the suction pipe and may be mixed with other processing liquids discharged onto the substrate in subsequent substrate processing, which may cause unintended over-etching in the subsequent substrate processing, and may reduce the accuracy of the substrate processing.

[0006] The technology disclosed in the present specification has been made in consideration of the problems described above, and is a technology for suppressing problems caused by the suction operation during substrate processing. [Means for solving the problem]

[0007] A substrate processing apparatus according to a first aspect of the technology disclosed in the present specification is a substrate processing apparatus for processing substrates, and includes a connection section and a plurality of first valves, a multiple valve capable of selectively supplying at least one of a processing liquid for processing the substrate and a cleaning liquid for cleaning the substrate, a connection pipe connected to the connection section and including one of the plurality of first valves, a processing liquid nozzle for ejecting the processing liquid onto the substrate through the connection pipe, a suction pipe branched from the connection pipe for suctioning the inside of the connection pipe, a second valve provided in the suction pipe, and a control unit for controlling the opening and closing of the plurality of first valves and the second valve, and when the control unit supplies the cleaning liquid from the connection section to the processing liquid nozzle, the control unit opens at least one of the plurality of first valves and the second valve, and supplies the cleaning liquid to the suction pipe to clean the inside of the suction pipe.

[0008] A substrate processing apparatus that is a second aspect of the technology disclosed in the present specification is a substrate processing apparatus for processing a substrate, and includes: a multi-valve that can selectively supply at least one of a processing liquid for processing the substrate and a cleaning liquid for cleaning the substrate; a processing liquid nozzle for ejecting the processing liquid onto the substrate; a connection pipe that connects the multi-valve and the processing liquid nozzle; a suction pipe that branches off from the connection pipe and draws water into the connection pipe; a conductivity meter that is provided in the suction pipe and measures the conductivity within the suction pipe; and a stop unit that stops the supply of the cleaning liquid from the multi-valve to the suction pipe when the conductivity value output from the conductivity meter is below a predetermined threshold value. [Effects of the Invention]

[0009] According to at least the first aspect of the technique disclosed in the present specification, the inside of the suction pipe is sufficiently cleaned, so that problems caused by the suction operation during substrate processing can be suppressed.

[0010] Furthermore, objects, features, aspects, and advantages associated with the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment; [Figure 2] 2 is a diagram illustrating an example of the configuration of a control unit illustrated in FIG. 1. FIG. [Figure 3] FIG. 2 illustrates an example of the configuration of a processing unit. [Figure 4] 1 is a diagram schematically illustrating an example of the configuration of piping connected to a processing liquid nozzle, among the configurations of a substrate processing apparatus according to an embodiment. [Figure 5] FIG. 10 is a diagram showing a state in which the processing liquid nozzle has been moved to a retracted position. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features will be shown for the purpose of explaining the technology, but these are merely examples and are not necessarily essential features for enabling the embodiments to be implemented.

[0013] The drawings are schematic, and for the sake of convenience, components may be omitted or simplified as appropriate. The relative sizes and positions of components shown in different drawings are not necessarily accurately depicted and may be changed as appropriate. Hatching may also be used in drawings such as plan views that are not cross-sectional views to facilitate understanding of the embodiments.

[0014] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions of them may be omitted to avoid duplication.

[0015] Furthermore, in the description given in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0016] Furthermore, in the description given in this specification, expressions such as "positive direction of the ... axis" or "negative direction of the ... axis" refer to the direction along the arrow of the ... axis shown in the figure as the positive direction, and the direction opposite to the arrow of the ... axis shown in the figure as the negative direction.

[0017] Furthermore, in the description provided in this specification, terms that indicate specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," may be used, but these terms are used for convenience to facilitate understanding of the contents of the embodiments and have no relation to the positions or directions when the embodiments are actually implemented.

[0018] Furthermore, in the description of the present specification, when "the upper surface of ..." or "the lower surface of ..." is used, it is intended to include not only the upper surface or lower surface of the target component itself, but also a state in which another component is formed on the upper surface or lower surface of the target component. For example, when it is described as "B provided on the upper surface of A," it does not preclude another component "C" from being interposed between A and B.

[0019] <Embodiment> The substrate processing apparatus and the substrate processing method according to this embodiment will be described below.

[0020] <Configuration of the substrate processing apparatus> 1 is a plan view schematically illustrating an example of the configuration of a substrate processing apparatus 1 according to this embodiment. The substrate processing apparatus 1 includes a load port 601, an indexer robot 602, a center robot 603, a control unit 90, and at least one processing unit 600 (four processing units in FIG. 1).

[0021] The processing unit 600 is a single-wafer processing apparatus that can be used for substrate processing, and specifically, an apparatus that performs processing to remove organic matter adhering to the substrate W. The organic matter adhering to the substrate W is, for example, a used resist film. The resist film has been used, for example, as an implantation mask for an ion implantation process.

[0022] The processing unit 600 may include a chamber 180. In this case, the atmosphere in the chamber 180 may be controlled by the control unit 90, allowing the processing unit 600 to perform substrate processing in a desired atmosphere.

[0023] The control unit 90 can control the operation of each component in the substrate processing apparatus 1. The carrier C is a container that stores substrates W. The load port 601 is a container holding mechanism that holds multiple carriers C. The indexer robot 602 can transport substrates W between the load port 601 and the substrate platform 604. The center robot 603 can transport substrates W between the substrate platform 604 and the processing unit 600.

[0024] With the above configuration, the indexer robot 602 , the substrate platform 604 and the center robot 603 function as a transport mechanism for transporting substrates W between each processing unit 600 and the load port 601 .

[0025] The unprocessed substrate W is taken out of the carrier C by the indexer robot 602. Then, the unprocessed substrate W is transferred to the center robot 603 via the substrate placement unit 604.

[0026] The center robot 603 carries the unprocessed substrate W into the processing unit 600. Then, the processing unit 600 processes the substrate W.

[0027] The substrate W that has been processed in the processing unit 600 is removed from the processing unit 600 by the center robot 603. Then, the processed substrate W passes through other processing units 600 as necessary, and is then transferred to the indexer robot 602 via the substrate placement part 604. The indexer robot 602 loads the processed substrate W into the carrier C. In this manner, the processing of the substrate W is completed.

[0028] Fig. 2 is a diagram showing an example of the configuration of the control unit 90 shown in Fig. 1. The control unit 90 may be configured by a general computer having electric circuits. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read only memory (ROM) 92, a random access memory (RAM) 93, a recording device 94, an input unit 96, a display unit 97, and a communication unit 98, as well as a bus line 95 interconnecting these units.

[0029] The ROM 92 stores a basic program. The RAM 93 is used as a work area when the CPU 91 performs predetermined processing. The recording device 94 is composed of a non-volatile recording device such as a flash memory or a hard disk drive. The input unit 96 is composed of various switches or a touch panel, and receives input setting instructions such as processing recipes from the user. The display unit 97 is composed of, for example, a liquid crystal display device and lamps, and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function via a local area network (LAN), etc.

[0030] Setting values ​​for controlling each component in the substrate processing apparatus 1 of FIG. 1 are preset in the recording device 94. The CPU 91 executes the processing program 94P, thereby controlling each component based on the setting values. The processing program 94P may be recorded on an external recording medium. Using this recording medium, the processing program 94P can be installed in the control unit 90. Some or all of the functions executed by the control unit 90 do not necessarily have to be realized by software, but may be realized by hardware such as a dedicated logic circuit.

[0031] <About the processing unit> Fig. 3 is a diagram showing an example of the configuration of a processing unit 600. As shown in the example in Fig. 3, the processing unit 600 includes a spin chuck 10 that holds one substrate W in a substantially horizontal position and rotates the substrate W about a vertical rotation axis Z1 that passes through the center of the substrate W, a processing liquid nozzle 20 that discharges a processing liquid onto the substrate W, a nozzle arm 22 to which the processing liquid nozzle 20 is attached at its end, a cylindrical processing cup 12 that surrounds the spin chuck 10 about the rotation axis Z1 of the substrate W, a rinse liquid nozzle 60, and a gas nozzle 30.

[0032] The processing liquid nozzle 20 is capable of ejecting a plurality of types of processing liquid, and a plurality of processing liquid nozzles 20 may be provided corresponding to the respective processing liquids. The processing liquid nozzle 20 ejects the processing liquid onto the upper surface of the substrate W. Here, the processing liquid is a liquid for processing the substrate W, and includes an etching liquid for etching the substrate W (such as a mixed solution (SC1) of ammonia and hydrogen peroxide water), a functional liquid such as CO2 water, an organic solvent such as IPA (isopropyl alcohol), or deionized water (DIW).

[0033] The spin chuck 10 includes a disk-shaped spin base 10A that vacuum-sucks the underside of the substrate W in a substantially horizontal position, a rotation shaft 10C that extends downward from the center of the spin base 10A, and a spin motor 10D that rotates the rotation shaft 10C to rotate the substrate W that is attracted to the spin base 10A. Note that instead of the spin chuck 10, a clamping chuck that includes multiple chuck pins that protrude upward from the outer periphery of the upper surface of the spin base and clamps the peripheral edge of the substrate W with the chuck pins may be used.

[0034] The nozzle arm 22 includes an arm portion 22A, a shaft body 22B, and an actuator 22C. The actuator 22C adjusts the angle of the shaft body 22B around its axis. One end of the arm portion 22A is fixed to the shaft body 22B, and the other end of the arm portion 22A is disposed away from the axis of the shaft body 22B. In addition, the processing liquid nozzle 20 is attached to the other end of the arm portion 22A. This allows the processing liquid nozzle 20 to swing in the radial direction of the substrate W.

[0035] Among the positions to which the processing liquid nozzle 20 can be moved by driving the nozzle arm 22, a position where the processing liquid is ejected onto the substrate W to perform substrate processing is defined as the processing position, and a position where the processing liquid nozzle 20 is retracted from above the substrate W (i.e., a position where the substrate W and the processing liquid nozzle 20 do not overlap in a planar view) is defined as the retracted position.The nozzle arm 22 can move the processing liquid nozzle 20 between the processing position and the retracted position.

[0036] The direction of movement of the processing liquid nozzle 20 due to the swinging motion only needs to have a component in the radial direction of the substrate W, and does not need to be strictly parallel to the radial direction of the substrate W.

[0037] Here, the nozzle arm 22 may be capable of moving up and down in the vertical direction by a motor (not shown) or the like. In this case, the distance between the processing liquid nozzle 20 attached to the end of the nozzle arm 22 and the upper surface of the substrate W can be adjusted by moving the nozzle arm 22 up and down.

[0038] The control unit 90 controls the rotation speed of the spin motor 10D and causes the processing liquid nozzle 20 to discharge the processing liquid onto the upper surface of the substrate W. The control unit 90 also controls the driving of the actuator 22C to oscillate the processing liquid nozzle 20 on the upper surface of the substrate W.

[0039] The processing unit 600 includes a rinse liquid nozzle 60 that discharges a rinse liquid above the substrate W. The rinse liquid nozzle 60 may be fixed above the substrate W. The rinse liquid nozzle 60 is connected to a rinse liquid supply pipe 62 that is provided with a rinse liquid valve 61. The opening and closing of the rinse liquid valve 61 is controlled by the control unit 90. The rinse liquid nozzle 60 discharges the rinse liquid toward the upper surface of the substrate W held by the spin chuck 10.

[0040] A rinse liquid is supplied to the rinse liquid nozzle 60 from a rinse liquid supply source via a rinse liquid supply pipe 62. DIW (deionized water) or the like is used as the rinse liquid. By supplying the rinse liquid from the rinse liquid nozzle 60 to the substrate W, deposits and the like adhering to the substrate W can be washed away.

[0041] The processing unit 600 includes a gas nozzle 30 that sprays gas from above the substrate W. The gas nozzle 30 is supported in a vertical position above the spin chuck 10. A gas supply pipe 32 equipped with a gas valve 31 is connected to the gas nozzle 30. The opening and closing of the gas valve 31 is controlled by a control unit 90.

[0042] Gas is supplied to the gas nozzle 30 from a gas supply source via a gas supply pipe 32. Examples of the gas supplied to the gas nozzle 30 include an inert gas such as nitrogen (N2) gas, dry air, or clean air.

[0043] FIG. 4 is a diagram schematically illustrating an example of the configuration of piping connected to the processing liquid nozzle 20, which is part of the configuration of the substrate processing apparatus 1 according to this embodiment.

[0044] As shown in FIG. 4, a multiple valve 40 is connected to the processing liquid nozzle 20 via a connection pipe 50, and a plurality of processing liquid supply sources are further connected to the multiple valve 40.

[0045] Multiple valve 40 includes a connection part 40A, a valve 50A of connection pipe 50 connected to connection part 40A from the downstream side, a valve 42A of supply pipe 42 connected to connection part 40A from the upstream side, a valve 43A of supply pipe 43 connected to connection part 40A from the upstream side, a valve 44A of supply pipe 44 connected to connection part 40A from the upstream side, a valve 45A of supply pipe 45 connected to connection part 40A from the upstream side, and a valve 41A of drain pipe 41 connected to connection part 40A. Multiple valve 40 selectively supplies at least one of the processing liquid or the cleaning liquid described below supplied from these supply pipes.

[0046] Ammonia (NH3), for example, is supplied to the supply pipe 42. Hydrogen peroxide (H2O2), for example, is supplied to the supply pipe 43. Deionized water (DIW), for example, is supplied to the supply pipe 44. CO2 water, for example, is supplied to the supply pipe 45.

[0047] The drainage pipe 41 drains the processing liquid or the cleaning liquid described below from the connection part 40A. It is desirable that the drainage pipe 41 be connected to a position vertically above the connection part 40A rather than the above-mentioned supply pipes (supply pipe 42, supply pipe 43, supply pipe 44, or supply pipe 45).

[0048] A suction pipe 52 that branches off downstream of a valve 50A is connected to the connection pipe 50. A suction mechanism 56, a conductivity meter 54, and a valve 52A are provided in the suction pipe 52. The suction pipe 52 also merges with a drainage pipe 58 downstream.

[0049] The suction mechanism 56 is, for example, a siphon-type suction mechanism. Here, the siphon-type suction mechanism refers to a mechanism that fills the inside of the pipe (suction pipe 52) with liquid and uses the principle of a siphon to suck (drain) the liquid inside the connection pipe 50. Note that the suction mechanism 56 may also be an ejector-type suction mechanism.

[0050] The conductivity meter 54 is a device that measures the conductivity in the suction pipe 52. The conductivity meter 54 measures, for example, the conductivity of a liquid (such as a processing liquid containing pure water) remaining in the suction pipe 52. The conductivity meter 54 does not necessarily have to be provided, or the conductivity meter 54 may be provided in the connection pipe 50 downstream of the position where it branches off from the suction pipe 52. When the conductivity meter 54 is provided in the connection pipe 50, the conductivity of the processing liquid discharged from the processing liquid nozzle 20 can be directly measured, which is useful for controlling the concentration of the processing liquid used in substrate processing.

[0051] <Operation of the substrate processing apparatus> Next, the operation of the substrate processing apparatus 1 according to this embodiment will be described with reference to FIGS.

[0052] The indexer robot 602 transports the substrate W from the carrier C in the load port 601 to the substrate mounting part 604. The center robot 603 transports the substrate W from the substrate mounting part 604 to one of the processing units 600. The processing unit 600 processes the substrate W. The center robot 603 transports the substrate W from the processing unit 600 to the substrate mounting part 604. The indexer robot 602 transports the substrate W from the substrate mounting part 604 to the carrier C in the load port 601.

[0053] The above-described processing of the substrate W is performed by supplying the processing liquid to the processing liquid nozzle 20 under the control of the control unit 90. The processing liquid is, for example, an etching liquid for etching a metal layer formed on the upper surface of the substrate W (for example, a metal layer formed of cobalt, aluminum, tungsten, copper, ruthenium, molybdenum, titanium nitride, tantalum nitride, or the like).

[0054] Specifically, valve 41A is closed and valve 50A is opened under the control of control unit 90. Furthermore, at least one of valves 42A, 43A, 44A, and 45A is opened under the control of control unit 90. Which of valves 42A, 43A, 44A, and 45A is opened can be changed depending on the type of processing liquid being supplied.

[0055] Then, the processing liquid is supplied from the corresponding supply source to the multiple valve 40, and the processing liquid is supplied from the multiple valve 40 to the processing liquid nozzle 20 via the connection pipe 50. Then, the processing liquid is supplied to the corresponding substrate W.

[0056] At this time, the valve 52A of the suction pipe 52 connected to the connection pipe 50 is closed, and the suction mechanism 56 is not operating.

[0057] Thereafter, the processing of the substrate W is completed, and the supply of the processing liquid to the processing liquid nozzle 20 is stopped under the control of the control unit 90. Then, the valve 52A is opened under the control of the control unit 90, and the suction mechanism 56 is operated with the valve 52A open. This causes the inside of the suction pipe 52 to be suctioned. That is, the processing liquid remaining in the connection pipe 50 and the suction pipe 52 is drawn into the suction pipe 52, and further drained via the drainage pipe 58.

[0058] Meanwhile, the substrate processing apparatus 1 can switch between opening and closing of each valve in order to clean the piping structure including the multiple valve 40 between substrate processing of the same or different substrates W.

[0059] In this case, first, under the control of the control unit 90, the cleaning liquid is supplied to the multiple valve 40. Here, the cleaning liquid is, for example, deionized water (DIW), and the time for which the cleaning liquid is supplied to the multiple valve 40 is, for example, about several seconds.

[0060] Specifically, valve 41A is opened, and valve 44A is opened under the control of control unit 90. Furthermore, valve 42A, valve 43A, valve 45A, and valve 50A are closed under the control of control unit 90.

[0061] The cleaning liquid is then supplied to the corresponding multiple valve 40 and then discharged from the drain pipe 41, whereby the inside of the multiple valve 40 is cleaned with the cleaning liquid.

[0062] Next, under the control of the control unit 90, a cleaning liquid is supplied to the connection pipe 50 via the multiple valve 40. Here, the cleaning liquid is, for example, deionized water (DIW), and the time for which the cleaning liquid is supplied to the connection pipe 50 is, for example, about several seconds.

[0063] Specifically, valve 44A is opened, and valve 50A is opened under the control of control unit 90. Furthermore, valve 42A, valve 43A, valve 45A, and valve 41A are closed under the control of control unit 90.

[0064] The cleaning liquid is then supplied to the connecting pipe 50 and the processing liquid nozzle 20 via the corresponding multiple valve 40, and is further drained from the bottom of the processing cup 12 into the drain pipe 58, thereby cleaning the inside of the connecting pipe 50 and the inside of the processing liquid nozzle 20 with the cleaning liquid.

[0065] At this time, by opening valve 52A of suction pipe 52 connected to connection pipe 50, cleaning liquid can be supplied to suction pipe 52. The cleaning liquid supplied to suction pipe 52 is further drained into drain pipe 58. In this way, the inside of suction pipe 52 is cleaned with the cleaning liquid.

[0066] By supplying the cleaning liquid to the suction pipe 52 as described above, the processing liquid remaining in the suction pipe 52 can be effectively cleaned by the suction operation after the substrate processing.

[0067] Due to the suction operation after substrate processing, processing liquid remains in the suction pipe 52, mainly at the branching portion from the connection pipe 50. If the remaining processing liquid mixes with other types of processing liquid supplied to the substrate W at a later timing, unintended effects (such as over-etching or under-etching) may occur. According to experiments by the inventors, cleaning only the connection pipe 50 requires several tens of seconds for the mixing to become sufficiently small.

[0068] On the other hand, according to the cleaning method of this embodiment in which the cleaning liquid is supplied directly to the suction pipe 52, it takes only a few seconds for the amount of the mixed liquid to become sufficiently small.

[0069] Furthermore, since the concentration of the processing liquid remaining in the suction pipe 52 can be calculated based on the conductivity value in the suction pipe 52 output from the conductivity meter 54 provided in the suction pipe 52, it is possible to control the end timing of the above-mentioned cleaning method in which the cleaning liquid is directly supplied to the suction pipe 52.

[0070] That is, when the conductivity in the suction pipe 52 falls below a predetermined threshold value (for example, a value at which the contamination is sufficiently small, such as 0.05 μS / cm or more and 0.1 μS / cm or less), the control unit 90 can close the valve 52A to stop the supply of the cleaning liquid to the suction pipe 52. Alternatively, if the conductivity does not fall below the threshold value after cleaning has been performed for a predetermined time, the control unit 90 can open the valve 52A again to resume the supply of the cleaning liquid to the suction pipe 52 so that additional cleaning can be performed. The threshold value can be determined in advance, for example, based on the correspondence between the measured conductivity and the amount of contamination in the actually discharged treatment liquid.

[0071] Here, when the connection pipe 50 and the suction pipe 52 are cleaned, the cleaning liquid is discharged from the processing liquid nozzle 20. Therefore, it is desirable that the processing liquid nozzle 20 be retracted from above the substrate W during this cleaning. Specifically, as shown in an example in Figure 5, it is desirable that, when the connection pipe 50 and the suction pipe 52 are cleaned, the control unit 90 controls the drive of the nozzle arm 22 to move the processing liquid nozzle 20 to the retracted position. Note that Figure 5 is a diagram showing a state in which the processing liquid nozzle 20 has been moved to the retracted position.

[0072] In addition, in order to prevent the substrate W from drying out during cleaning of the connection pipe 50 and the suction pipe 52, it is desirable to supply a rinse liquid to the substrate W from a rinse liquid nozzle 60 during the above cleaning, as shown in FIG.

[0073] In the above description, the suction pipe 52 is cleaned when the processing liquid nozzle 20 is cleaned, but only the suction pipe 52 may be cleaned.

[0074] In the above description, cleaning of suction piping 52 is performed after cleaning of multiple valve 40, but cleaning of suction piping 52 may be performed first, or only cleaning of suction piping 52 may be performed without cleaning of multiple valve 40. Furthermore, cleaning of suction piping 52 and cleaning of multiple valve 40 may be performed simultaneously by opening valves 41A, 50A, and 52A.

[0075] Furthermore, when a plurality of connection pipes 50 are connected to one multiple valve 40 and a plurality of processing liquid nozzles 20 are provided corresponding to the connection pipes 50, the cleaning of the multiple valves 40, the connection pipes 50, and the suction pipes 52 may be performed simultaneously for the plurality of connection pipes 50 and the corresponding plurality of suction pipes 52. In this way, the cleaning time can be shortened.

[0076] Then, before and after cleaning the multiple valve 40, the connection pipe 50, and the suction pipe 52, the processing liquid can be discharged from different processing liquid nozzles 20.

[0077] <Effects of the above-described embodiments> Next, examples of effects obtained by the above-described embodiments will be described. Note that in the following description, the effects will be described based on the specific configurations exemplified in the above-described embodiments, but these may be replaced with other specific configurations exemplified in the present specification as long as the same effects are obtained. In other words, for convenience, only one of the corresponding specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

[0078] According to the embodiment described above, in a substrate processing method using a substrate processing apparatus for processing a substrate W, the substrate processing apparatus includes a multiple valve 40, a processing liquid nozzle 20, a connection pipe 50, and a suction pipe 52. The multiple valve 40 is capable of selectively supplying at least one of a processing liquid for processing the substrate W and a cleaning liquid for cleaning. The processing liquid nozzle 20 discharges the processing liquid onto the substrate W. The connection pipe 50 connects the multiple valve 40 and the processing liquid nozzle 20. The suction pipe 52 is branched from the connection pipe 50. The suction pipe 52 also suctions the inside of the connection pipe 50. The substrate processing method further includes a step of cleaning the inside of the suction pipe 52 by supplying a cleaning liquid from the multiple valve 40 to the suction pipe 52.

[0079] According to this configuration, the inside of the suction pipe 52 is sufficiently cleaned, thereby suppressing problems caused by the processing liquid remaining in the suction pipe 52 being discharged onto the substrate W in subsequent substrate processing. If the processing liquid remaining in the suction pipe 52 is an etching liquid, unintended over-etching in subsequent substrate processing can be suppressed. Furthermore, if the processing liquid remaining in the suction pipe 52 is pure water (low-conductivity DIW), the pure water, which becomes conductive due to the inclusion of O2 or CO2 from the atmosphere as a result of remaining in the suction pipe 52 for a long time, can be suppressed from causing unintended arc discharge in subsequent substrate processing.

[0080] Furthermore, even if other configurations shown as examples in this specification are appropriately added to the above configuration, that is, even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be achieved.

[0081] Furthermore, according to the embodiment described above, multiple valve 40 includes drainage pipe 41 for draining at least one of the processing liquid and the cleaning liquid inside multiple valve 40. The substrate processing method further includes a step of supplying the cleaning liquid from multiple valve 40 to drainage pipe 41. With this configuration, the inside of multi-valve 40 can be cleaned by supplying the cleaning liquid from multiple valve 40 to drainage pipe 41. This makes it possible to prevent problems caused by the processing liquid remaining inside multi-valve 40 being discharged onto substrate W during subsequent substrate processing.

[0082] Furthermore, according to the embodiment described above, the step of supplying the cleaning liquid from multiple valve 40 to drainage pipe 41 is carried out simultaneously with the step of cleaning the inside of suction pipe 52. With this configuration, multiple valve 40 and suction pipe 52 are cleaned simultaneously, which reduces the time required for cleaning.

[0083] Furthermore, according to the embodiment described above, the processing liquid nozzle 20 can be positioned at a processing position for processing the substrate W and a retracted position for retracting from the substrate W. The step of cleaning the inside of the suction pipe 52 is performed while the processing liquid nozzle 20 is positioned at the retracted position. With this configuration, since the cleaning of the inside of the suction pipe 52 is performed while the processing liquid nozzle 20 is positioned at the retracted position, even if the cleaning liquid supplied to the suction pipe 52 is discharged from the processing liquid nozzle 20, it is possible to prevent the discharged cleaning liquid from contaminating the substrate W.

[0084] Furthermore, according to the embodiment described above, the substrate processing apparatus includes a rinse liquid nozzle 60 for discharging a rinse liquid onto the substrate W. The rinse liquid nozzle 60 discharges the rinse liquid onto the substrate W at the processing position during the process of cleaning the inside of the suction pipe 52. With this configuration, the substrate W can be rinsed while the inside of the suction pipe 52 is being cleaned, thereby enabling efficient substrate processing.

[0085] Furthermore, according to the embodiment described above, the substrate processing apparatus includes a conductivity meter 54 provided in the suction pipe 52 for measuring the conductivity in the suction pipe 52, and a stop unit that stops the supply of cleaning liquid from the multiple valve 40 to the suction pipe 52 when the conductivity value output from the conductivity meter 54 is equal to or lower than a predetermined threshold value. Here, the stop unit corresponds to, for example, the control unit 90. With this configuration, the cleaning time in the suction pipe 52 can be adjusted according to the conductivity value output from the conductivity meter 54 under the control of the control unit 90. Therefore, the cleaning time in the suction pipe 52 can be prevented from becoming longer than necessary, and the processing liquid remaining in the suction pipe 52 can be effectively removed.

[0086] <Modifications of the above-described embodiments> In the embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may also be described, but these are merely examples in all aspects and are not limiting.

[0087] Thus, numerous variations and equivalents not shown are contemplated within the scope of the technology disclosed herein, including, for example, the modification, addition, or omission of at least one component.

[0088] Furthermore, in the embodiments described above, when a material name is mentioned without any particular specification, it is assumed that the material may contain other additives, such as an alloy, unless a contradiction arises. [Explanation of symbols]

[0089] 1. Substrate processing equipment 10 Spin chuck 10A Spin Base 10C Rotational Axis 10D Spin Motor 12 Processing Cups 20 Processing liquid nozzle 22 Nozzle arm 22A Arm section 22B Shaft body 22C Actuator 30 Gas nozzle 31 Gas valve 32 Gas supply pipe 40 Multiple valve 40A connection 41,58 Drainage piping 41A, 42A, 43A, 44A, 45A, 50A, 52A valves 42, 43, 44, 45 Supply piping 50 Connecting piping 52 Suction piping 54 Conductivity meter 56 Suction mechanism 60 Rinse liquid nozzle 61 Rinse liquid valve 62 Rinse liquid supply pipe 90 Control Unit 91 CPU 92 ROM 93 RAM 94 Recording Devices 94P Processing Program 95 Bus Line 96 Input section 97 Display section 98 Communications Department 180 Chamber 600 processing units 601 Loading Port 602 Indexer Robot 603 Center Robot 604 Substrate placement section

Claims

1. a substrate processing apparatus for processing a substrate, a multi-valve including a connection portion and a plurality of first valves, and capable of selectively supplying at least one of a processing liquid for processing the substrate and a cleaning liquid for cleaning; a connecting pipe connected to the connecting portion and including one of the plurality of first valves; a processing liquid nozzle for discharging the processing liquid onto the substrate through the connection pipe; a suction pipe branching from the connection pipe and configured to draw air into the connection pipe; a second valve provided in the suction pipe; a control unit that controls opening and closing of the plurality of first valves and the plurality of second valves, when the control unit supplies the cleaning liquid from the connection unit to the processing liquid nozzle, the control unit opens at least one of the plurality of first valves and the second valve to supply the cleaning liquid to the suction pipe, thereby cleaning the inside of the suction pipe. Substrate processing equipment.

2. a substrate processing apparatus for processing a substrate, a multi-valve capable of selectively supplying at least one of a processing liquid for processing the substrate and a cleaning liquid for cleaning the substrate; a processing liquid nozzle for discharging the processing liquid onto the substrate; a connection pipe connecting the multiple valve and the processing liquid nozzle; a suction pipe branching from the connection pipe and configured to draw air into the connection pipe; a conductivity meter provided in the suction pipe for measuring the conductivity in the suction pipe; a stopper that stops the supply of the cleaning liquid from the multiple valve to the suction pipe when the conductivity value output from the conductivity meter is equal to or less than a predetermined threshold value. Substrate processing equipment.

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