Method for minimizing wafer backside damage in semiconductor wafer processing

Abstract

The present disclosure generally relates to a substrate support for semiconductor processing. In one embodiment, a substrate support is provided that includes: a body having a substrate chucking surface; an electrode disposed within the body; a plurality of substrate support features formed on the substrate chucking surface, the number of the substrate support features increasing in a radial direction from a center of the substrate chucking surface toward an edge of the substrate chucking surface; and a seasoning layer formed on the plurality of substrate support features, the seasoning layer comprising silicon nitride. [Selected Figure] Figure 2

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to substrate supports for semiconductor processing. [Background technology]

[0002]

[0002] Electrostatic chucks hold and support substrates during manufacturing processes without mechanically clamping the substrate. During use of an electrostatic chuck, the backside of a substrate, such as a semiconductor wafer, is held to the surface of the electrostatic chuck by electrostatic forces provided by one or more electrodes embedded in the surface of the electrostatic chuck. The surface of the electrostatic chuck may be flat or may have one or more protrusions, projections, or other substrate support features that further elevate the substrate to remove heat from the substrate.

[0003]

[0003] The number and thickness of layers used to form semiconductor devices are increasing. The increased number of layers deposited on the front surface of a substrate can result in substrate curvature (i.e., bending of the substrate across its diameter) during high processing temperatures. Substrate curvature can cause defocusing or defocusing problems during lithography processes. For example, during exposure, focus drift caused by substrate bowing adversely affects critical dimension (CD) uniformity. Conventional electrostatic chucks are unable to properly chuck increased substrate bending, in part due to an inability to provide a sufficiently strong chucking force or, when high chucking voltages are used, due to arcing. Furthermore, substrate support features (e.g., protrusions or protrusions) can wear away from repeated chucking and dechucking, damaging the backside layers or surface of the substrate, which in turn can damage or otherwise affect layers deposited on the front surface of the substrate. Therefore, there is a need for an improved electrostatic chucking device that can address these issues. Summary of the Invention

[0004]

[0004] The present disclosure generally relates to a substrate support for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a ceramic body having a substrate chucking surface. An RF electrode is disposed within the ceramic body. A heating element is embedded in the ceramic body. A plurality of substrate support features are formed on the substrate chucking surface. The number of substrate support features increases radially from the center of the substrate chucking surface toward the edge of the substrate chucking surface. A seasoning layer is formed on the plurality of substrate support features. The seasoning layer includes silicon nitride, silicon, or silicon oxide.

[0005] In another embodiment, a substrate support includes a body having a substrate chucking surface having an inner region and an outer region surrounding the inner region, an electrode disposed within the body, a ledge formed around the periphery of the body, the ledge surrounding the outer region, and a plurality of substrate support features formed on the substrate chucking surface, the plurality of substrate support features having a first density in the inner region and a second density in the outer region; The ratio of the second density to the first density is from about 4:1 to about 10:1.

[0006]

[0006] In yet another embodiment, the substrate support includes a body having a substrate chucking surface, an electrode disposed within the body, a temperature control device disposed within the body, an edge ring disposed around the substrate chucking surface, a plurality of substrate support features formed on the substrate chucking surface, wherein the total number of substrate support features is about 1000 or more, and the number of substrate support features increases radially from the center of the substrate chucking surface toward the edge ring, and a seasoning layer formed on the plurality of substrate support features and comprising silicon oxide and silicon nitride.

[0007]

[0007] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be made by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered to limit its scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic layout of a processing chamber according to one embodiment of the present disclosure. [Figure 2] 1 is a cross-sectional view of an exemplary substrate support according to one embodiment of the present disclosure. [Figure 3] FIG. 3 is a top view of the substrate support of FIG. 2. [Figure 4] FIG. 1 is an enlarged view of a portion of a feature supporting a substrate to be supported according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0012] For ease of understanding, identical elements common to the figures have been designated using identical reference numerals where possible. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0010]

[0013] FIG. 1 illustrates an exemplary processing chamber 100 having a substrate support 140 therein. The processing chamber 100 generally includes a lid 102 and a chamber body 104 coupled to the lid 102 to define a processing volume 112 therein. A process gas inlet 114 may be formed through the lid 102 to provide process gas from a gas source 116 to the processing volume 112. Alternatively, the process gas inlet 114 may be formed in the chamber body 104 to provide process gas laterally from a sidewall of the processing chamber 100. In some embodiments, one or more process gas inlets may be formed in the lid 102 and the chamber body 104. A shaft 106 extends into the processing volume 112 through an opening 110 in the bottom of the chamber body 104. The shaft 106 is coupled to and supports the substrate support 140. A power source 108 is coupled through the shaft 106 to an electrode 118 disposed within the substrate support 140. The power supply 108 biases the electrode 118 to chuck the substrate W to the substrate support 140. In one example, the substrate support 140 is an electrostatic chuck.

[0011]

[0014] A substrate W is shown disposed on a substrate support 140. The substrate W may be crystalline silicon (e.g., Si <100> or Si <111> The substrate W may be a material such as silicon oxide, strained silicon, silicon germanium, germanium, doped or undoped polysilicon, doped or undoped silicon wafer, patterned or unpatterned wafer, silicon-on-insulator (SOI), carbon-doped silicon oxide, silicon nitride, doped silicon, gallium arsenide, glass, or sapphire. The substrate W may have various dimensions, such as 200 mm, 300 mm, 450 mm, or other diameters, and may be a circular, rectangular, or square panel. The substrate W may have one or more layers (collectively referred to as a backside layer), such as silicon oxide, silicon nitride, amorphous silicon, or any combination thereof, formed on the backside of the substrate W. In one embodiment, the backside layer is a three-layer stack including silicon nitride, amorphous silicon, and silicon oxide, with the silicon nitride being in physical contact with the backside of the substrate.

[0012]

[0015] The substrate support 140 can be used with any suitable processing chamber, including processing chambers not shown. Suitable processing chambers can include, but are not limited to, deposition chambers or etch chambers. An exemplary deposition chamber can be a chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) chamber. An exemplary etch chamber can be a plasma etch chamber.

[0013]

[0016] FIG. 2 is a cross-sectional view of an exemplary substrate support 200. The substrate support 200 can be used as the substrate support 140 of FIG. 1. The substrate support 200 has a body 202. The body 202 is made of a dielectric material, such as a ceramic, such as aluminum oxide or aluminum nitride. A temperature control device 208 is disposed within the body 202 to heat or cool the substrate support 200 to a desired temperature. In one example, the temperature control device 208 is a resistive heater. In another embodiment, the temperature control device 208 is a channel adapted to conduct heat to and / or from the body 202 through which a heated or cooled fluid, such as air, nitrogen, helium, water, or glycol, flows. The temperature control device 208 can raise the temperature of the substrate support 200 to a temperature greater than 350 degrees Celsius, for example, greater than 550 degrees Celsius, for example, about 650 degrees Celsius. An electrode 206 is also disposed within the body 202. The electrode 206 is coupled to a power source (such as power source 108 in FIG. 1 ) that provides it with an electrical charge for chucking the substrate to the substrate support 200. The electrode 206 may be a single component or separate sections spanning the diameter of the body 202, as shown, forming either a monopolar or bipolar chuck. Although not shown, it is contemplated that the electrodes 206 may be arranged in any pattern, such as a grid, circle, zigzag, serpentine, etc.

[0014]

[0017] The body 202 has a substrate chucking surface 212. A ledge 216 can be formed around the body 202 to define the substrate chucking surface 212 therein. The ledge 216 can have a width of about 0.5 mm to about 10 mm, for example, about 1 mm to about 5 mm. The ledge 216 defines a recess 218 in the body 202 radially inward of the ledge 216. A plurality of substrate support features 214 are disposed within the recess 218. The substrate support features 214 extend upward from a surface of the recess 218 to define an interior region 222 of the substrate chucking surface 212. The substrate support features 214 can be, for example, cylindrical depressions, ridges, hemispherical protrusions, etc. In one embodiment, the substrate support features 214 extend from the recess 218 to a height of about 10 μm to about 50 μm. The top surface of the substrate support feature 214 and the top surface of the ledge 216 may be coplanar or may be at different heights. The substrate support feature 214 may have a diameter of about 1 mm to about 6 mm, for example, about 2 mm to about 4 mm.

[0015]

[0018] In some embodiments, the ledge 216 is omitted. Instead, an edge ring (not shown) can be disposed around the substrate chucking surface 212. The edge ring can have a height of about 10 μm to about 50 μm and a width of about 0.5 mm to about 10 mm, e.g., about 1 mm to about 5 mm. In such cases, the edge ring defines an interior region, such as interior region 222, radially inward of the edge ring in which the substrate support features 214 can be disposed.

[0016]

[0019] To address the problems of conventional electrostatic chucks, various approaches and features of the disclosed substrate support are provided to reduce backside damage to the substrate. FIG. 3 is a top view of a substrate support 200 showing a substrate chucking surface 212 according to an embodiment of the present disclosure. The substrate support features 214 are shown surrounded by ledges 216. In one embodiment, the number of substrate support features 214 can be increased to more than 120, such as about 500 or more, such as about 800 or more, such as about 1000 or more, such as about 1500 to about 2000. The minimum distance between the substrate support features 214 can be about 0.1 mm to about 0.5 mm. By increasing the number of substrate support features 214, the force for chucking the substrate to the substrate chucking surface 212 can be evenly shared by the increased number of substrate support features 214. This approach reduces impact to the substrate support features 214 due to repeated chucking and dechucking. Therefore, the substrate support features 214 do not wear down quickly and do not form sharp, irregular asperities on the surface of the substrate support features 214 that would cause damage to the backside layer of the substrate.

[0017]

[0020] Increasing the number of substrate support features 214 is beneficial because it also significantly increases the area provided for chucking a substrate to the substrate chucking surface 212. In one embodiment as shown, the number (i.e., density) of substrate support features 214 is greater in an outer region 252 of the recess 218 near the ledge 216 than in an inner region 250 of the recess 218. That is, there are more substrate support features 214 per unit area around the periphery of the substrate chucking surface 212 of the substrate support 200 than in the inner region. The inner region 250 is surrounded by the outer region 252. In some embodiments, the radial distribution of substrate support features 214 is greater toward the periphery of the substrate chucking surface 212 than in the inner region of the substrate chucking surface 212. In one embodiment shown in FIG. 3, the number of substrate support features 214 increases radially outward from the center 254 (or inner region) of the substrate chucking surface 212 toward the ledge 216 (or the periphery of the outer region 252). If ledges are not included, the number of substrate support features 214 may increase radially outward from the center 254 toward the edge of the substrate chucking surface 212. In either case, the chucking force applied to a substrate placed on the substrate chucking surface 212 may be increased at its outer region 252, thereby allowing highly curved substrates, such as those with a bow of 1 mm or more, to be held (i.e., "chucked") by the substrate support 200. This significantly improves chucking performance and minimizes the chucking voltage required to chuck highly curved substrates at the outer region. Increasing the number of substrate support features 214 reduces the chucking voltage (i.e., the required chucking force) required at the outer region 252, thereby minimizing damage to the backside layer of the substrate.

[0018]

[0021] The inner region 250 has a radial distance, and the outer region 252 has a radial distance, and the radial distance of the inner region 250 to the radial distance of the outer region 252 can be in a ratio of about 1:1 to about 4:1, e.g., about 2:1 to about 3:1. If the substrate chucking surface 212 is configured to process a 300 mm substrate, the radial distance of the inner region 250 can be about 80 mm to about 115 mm, e.g., about 100 mm, measured from the center 254 of the substrate chucking surface 212. The radial distance of the outer region 252 can be about 30 mm to about 65 mm, e.g., about 50 mm, measured from the outer periphery of the inner region 250 to the edge of the substrate chucking surface 212 (e.g., the interface between the substrate chucking surface 212 and the ledge 216). The number of substrate support features 214 in the outer region 252 can be about 100 mm to about 65 mm, e.g., about 50 mm. 2 and the number of substrate support features 214 in the inner region 250 is 1 In some embodiments, the density may be The ratio of the second density to the first density can be about 1:1 or more, such as about 2:1 or more, for example, from about 4:1 to about 10:1.

[0019]

[0022] 3, the substrate support features 214 may be arranged in a concentric pattern. Other arrangements of the substrate support features 214 are also contemplated. For example, the substrate support features 214 may be arranged in a pattern in which the diameter increases with radial distance, or vice versa. That is, the substrate support features 214 may have a diameter that gradually increases radially outward from the center 254 toward the edge of the substrate chucking surface 212. This approach, in combination with any of the embodiments described herein, may provide a higher chucking force in the outer region 252 than in the inner region 250.

[0020]

[0023] The disclosed support 200 may additionally or alternatively include other features to reduce damage to the backside layer of a substrate. For example, it has been observed that sharp, irregular asperities on the substrate chucking surface 212 can penetrate the backside layer and damage the front side of the substrate and layers deposited thereon. By reducing the average surface roughness (Ra) of the substrate support features 214, irregular asperities on the substrate chucking surface 212 that contact the backside of the substrate can be minimized, thereby reducing damage to the backside layer of the substrate. In various embodiments, the substrate support features 214 can have an Ra of about 65 μm or less, such as about 50 μm or less, e.g., 1 μm to about 40 μm. In one embodiment, the Ra of the substrate support features 214 is about 15 μm to about 20 μm.

[0021]

[0024] In some embodiments, a seasoning layer may be deposited on at least the substrate support features 214 to protect the backside layer of the substrate from being damaged by irregularities found on the substrate chucking surface 212. FIG. 4 is an enlarged view of a portion of the substrate support feature 214 before it supports a substrate W. A seasoning layer 400 is formed on the surface of the substrate support feature 214. The seasoning layer 400 may be conformally formed on the exposed surfaces of the substrate support features 214. Alternatively, the seasoning layer 400 may be selectively formed on the top surfaces of the substrate support features 214 without entering the valleys between the substrate support features 214. In some cases, the seasoning layer 400 may be spread to cover the entire ledge 216 and / or substrate chucking surface 212 (FIG. 2). The seasoning layer 400 may have a hardness that minimizes impact on the backside layer when it contacts a substrate. For example, the seasoning layer 400 may have a hardness ranging from about 2 GPa to about 50 GPa, e.g., from about 5 GPa to about 30 GPa. Suitable materials include, but are not limited to, silicon, silicon nitride, silicon oxide, carbon-doped silicon oxide (SiOC), silicon carbide (SiC), nitrogen-containing silicon carbide (SiCN), aluminum oxide, aluminum nitride, undoped silicon glass (USG), e.g., silicon oxide, borosilicate glass (BSG), phosphosilicate glass (PSG), or borosilicate glass (BPSG), or any combination thereof. Other materials, such as materials with lower hardness and resistant to degradation due to exposure to chemicals used in processing the substrate, may also be used.

[0022]

[0025] Seasoning layer 400 can be a single layer of the above materials or a layer stack including any combination of the above materials. In one embodiment, seasoning layer 400 is a bilayer stack including silicon oxide and silicon nitride, which can be arranged in any order. In another embodiment, seasoning layer 400 is a bilayer stack including USG and silicon nitride, which can be arranged in any order. In yet another embodiment, seasoning layer 400 is SiCN. It is anticipated that the seasoning layer can be tuned or adjusted to affect the hardness of seasoning layer 400 by varying the seasoning material and deposition temperature during the seasoning process. Other factors, such as dielectric constant, breakdown voltage, and defect performance, can also be considered when selecting a seasoning material.

[0023]

[0026] In any of the above embodiments, seasoning layer 400 can have a thickness of about 0.3 μm to about 10 μm. In one embodiment, seasoning layer 400 is formed in situ and has a thickness of about 0.5 μm or more, e.g., about 1 μm or more, e.g., about 1.2 μm to about 3.5 μm. In one example, seasoning layer 400 has a thickness of about 1 μm. In one example where seasoning layer 400 includes silicon nitride and USG, the total thickness of seasoning layer 400 can be 0.5 μm or 1 μm. In another example where seasoning layer 400 is USG, the total thickness of seasoning layer 400 is 1 μm. In yet another example where seasoning layer 400 is SiCN, the total thickness of seasoning layer 400 is 1 μm. In either case, the thickness of seasoning layer 400 is selected to allow the Ra of substrate support features 214 to be transferred to seasoning layer 400. Thus, seasoning layer 400 can have an Ra that is substantially the same as the Ra of substrate support features 214. Furthermore, because seasoning layer 400 improves the resistance of substrate chucking surface 212 to degradation due to exposure to processing chemicals, the Ra of substrate support features 214 can be maintained much longer than conventional designs in which the seasoning layer is not formed, thereby improving the ability of substrate support 200 to chuck highly bowed substrates at high temperatures, such as above 550 degrees Celsius, such as about 650 degrees Celsius.

[0024]

[0027] The seasoning layer 400 may be formed only once, or may be formed in situ between substrate processing steps, such as as part of a chamber cleaning cycle. Furthermore, the seasoning layer 400 may be formed in situ in the same chamber in which the substrate support 200 operates, or in a different chamber. The seasoning layer 400 may be periodically re-formed on the substrate chucking surface 212, or at least on the surfaces of the substrate support features 214. For example, the seasoning layer 400 may be re-formed on the substrate chucking surface 212 after a predetermined number of substrates in a batch have been processed (e.g., in a film deposition or etching process). The predetermined number may be about 400 substrates or more, such as about 1000 substrates or more, such as about 2000 to about 4000 substrates.

[0025]

[0028] In addition to any of the approaches described herein, the overall thickness of the backside layer 402 can be increased to reduce damage caused by the substrate support feature 214. That is, the overall thickness of the backside layer can be increased to prevent the substrate support feature 214 from punching through the backside layer. Punching through a thicker backside layer requires a greater force relative to sharp features on the surface of the substrate support feature 214. In such cases, the seasoning layer 400 may be optional. In one embodiment, the overall thickness of the backside layer (e.g., a multilayer of silicon oxide, amorphous silicon, and silicon nitride) can be increased from a conventional thickness of about 0.1 μm to a thickness of about 1 μm or more, e.g., about 2 μm to about 10 μm. It is contemplated that this approach can be employed alone or in conjunction with one or more of the embodiments described in this disclosure.

[0026]

[0029] In one embodiment, which may be combined with any one or more of the embodiments described herein, the substrate support 200 may be designed with specific performance parameters to improve its chucking capabilities. In one example, the body 202 is designed to have a leakage current of between about 250 milliamps and about 50 milliamps. By limiting the leakage current of the substrate support 200, the uniformity of the chucking force provided thereby is significantly improved, thus improving the quality of substrate processing.

[0027]

[0030] In one embodiment, which may be combined with any one or more of the embodiments described herein, the body 202 has a surface area of ​​about 0.1×10 10 Ω cm and approximately 1.0x10 11 The body 202 can have a desired resistivity for its operating temperature, such as a resistivity between about 0.1×10 Ω·cm at about 550 degrees Celsius. 10 Ω cm and approximately 1.0 × 10 11 Ω·cm, e.g., about 0.8×10 10 Ω cm and approximately 7×10 10 The body 202 can be designed to have a resistivity between about 0.1×10 Ω·cm at about 350 degrees Celsius. Increasing the resistivity reduces the voltage required to provide adequate chucking force and prevents arcing of the plasma. In another example, the body 202 has a resistivity between about 0.1×10 Ω·cm at about 350 degrees Celsius. 10 Ω cm and approximately 1.0 × 10 11 Ω·cm, e.g., about 0.2×10 10 Ω cm and approximately 5×10 10 The resistivity can be designed to have a resistivity between 0.01 and 0.1 ohm·cm. Increasing the resistivity improves chucking performance at low temperatures, such as below 650 degrees Celsius, for example below about 550 degrees Celsius.

[0028]

[0031] Various approaches have been disclosed for eliminating or minimizing damage to the backside layer of a substrate. These approaches include forming a seasoning layer on at least the substrate support features, modifying the surface roughness (Ra) of the substrate support features (and therefore the Ra of the seasoning layer deposited thereon), increasing the thickness of the substrate backside layer, increasing the number of support features, increasing the density of substrate support features in the outer region of the substrate chucking surface, and lowering the chucking voltage. These approaches provide resistance to degradation of the substrate support features and prevent backside damage from penetrating the backside layer and damaging layers deposited on the front side of the substrate. Therefore, the focus drift problem during lithography processes described in the background section can be prevented or minimized, thereby improving the CD uniformity of features on the substrate.

[0029]

[0032] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. a ceramic body having a substrate chucking surface; an electrode disposed within the ceramic body; a heating element embedded in the ceramic body; a plurality of substrate support features formed on the substrate chucking surface, the plurality of substrate support features being arranged in a radially increasing diameter between a center and an edge of the substrate chucking surface, the plurality of substrate support features comprising: a first group of substrate support features disposed in a radially inner region of the substrate chucking surface at a first radial distance and having a first density; and a second group of substrate support features disposed in a radially outer region of the substrate chucking surface at a second radial distance and having a second density, the outer region surrounding the inner region, the second density being greater than the first density, and a ratio of the first radial distance to the second radial distance being in a range of 1:1 to 4:1; a seasoning layer formed on the plurality of substrate support features, the seasoning layer comprising silicon nitride, silicon, or silicon oxide; and A substrate support comprising:

2. The substrate support of claim 1 , wherein the average surface roughness (Ra) of the plurality of substrate support features is between 15 μm and 20 μm.

3. The substrate support of claim 1 , wherein the seasoning layer has a hardness in the range of 5 GPa to 30 GPa.

4. The substrate support of claim 1 , wherein the seasoning layer further comprises undoped silicon glass (USG).

5. The substrate support of claim 1 , wherein the seasoning layer has a thickness of 0.5 μm to 1.2 μm.

6. a body including a substrate chucking surface, the body having an inner region and an outer region surrounding the inner region; an electrode disposed within the body; a ledge formed around the body, the ledge surrounding the outer region; a plurality of substrate support features formed on the substrate chucking surface, the plurality of substrate support features being arranged in a radially increasing diameter between a center and an edge of the substrate chucking surface, the plurality of substrate support features comprising a first group of substrate support features in the inner region having a first density and a second group of substrate support features in the outer region having a second density, wherein a ratio of the second density to the first density is in a range of 4:1 to 10:1; A substrate support comprising:

7. 7. The substrate support of claim 6, wherein the inner region has a first radial distance and the outer region has a second radial distance, and wherein a ratio of the first radial distance to the second radial distance is in the range of 1:1 to 4:

1.

8. The substrate support of claim 7 , wherein a ratio of the first radial distance to the second radial distance is in the range of 2:1 to 3:

1.

9. The substrate support of claim 1 or 6, wherein the total number of the plurality of substrate support features is 1000 or more.

10. The substrate support of claim 1 or 6, wherein the plurality of substrate support features are arranged concentrically.

11. The substrate support of claim 1 or 6, wherein the plurality of substrate support features have an average surface roughness (Ra) of 15 μm to 20 μm.

12. 7. The substrate support of claim 6, further comprising a seasoning layer formed on the plurality of substrate support features, wherein the seasoning layer comprises silicon, silicon nitride, silicon oxide, carbon-doped silicon oxide (SiOC), silicon carbide (SiC), nitrogen-containing silicon carbide (SiCN), aluminum oxide, aluminum nitride, undoped silicon glass (USG), borosilicate glass (BSG), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), or any combination thereof.

13. The substrate support of claim 6 , further comprising a seasoning layer formed on the plurality of substrate support features, the seasoning layer being a bilayer stack comprising silicon oxide and silicon nitride.

14. The substrate support of claim 6 , wherein each feature of the plurality of substrate support features has a diameter of 1 mm to 6 mm and a height of 10 μm to 50 μm.

15. a main body having a substrate chucking surface; an electrode disposed within the body; a temperature control device disposed within the body; an edge ring disposed around the periphery of the substrate chucking surface; a plurality of substrate support features formed on the substrate chucking surface, the plurality of substrate support features being arranged in a radially increasing diameter between a center and an edge of the substrate chucking surface, a total number of the substrate support features being equal to or greater than 1000, the plurality of substrate support features comprising: a first group of substrate support features disposed in a radially inner region of the substrate chucking surface at a first radial distance and having a first density; and a second group of substrate support features disposed in a radially outer region of the substrate chucking surface at a second radial distance and having a second density, the outer region surrounding the inner region, the second density being greater than the first density, and a ratio of the first radial distance to the second radial distance being in a range of 1:1 to 4:1; a seasoning layer formed on the plurality of substrate support features, the seasoning layer comprising silicon oxide and silicon nitride; A substrate support comprising:

16. The substrate support of claim 15 , wherein each feature of the plurality of substrate support features has a diameter of 1 mm to 6 mm and a height of 10 μm to 50 μm.

17. 16. The substrate support of claim 15, wherein the seasoning layer further comprises silicon, carbon-doped silicon oxide (SiOC), silicon carbide (SiC), nitrogen-containing silicon carbide (SiCN), aluminum oxide, aluminum nitride, undoped silicon glass (USG), borosilicate glass (BSG), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), or any combination thereof.

18. The substrate support of claim 1 , wherein the plurality of substrate support features have an average surface roughness (Ra) of 65 μm or less.

19. The substrate support of claim 1 , wherein the seasoning layer is silicon nitride.

20. The substrate support of claim 6 , further comprising a seasoning layer formed on the plurality of substrate support features, the seasoning layer being a bilayer stack comprising silicon oxide and silicon nitride.

21. The substrate support of claim 15, wherein the average surface roughness (Ra) of the plurality of substrate support features is between 15 μm and 20 μm.

22. The substrate support of claim 15, wherein the seasoning layer has a thickness of 0.5 μm to 1.2 μm.

23. 16. Substrate support according to claim 1 or claim 15, wherein the ratio of the second density to the first density is in the range of 4:1 to 10:

1.

24. 24. Substrate support according to claim 23, wherein a ratio of the first radial distance to the second radial distance is in the range of 2:1 to 3:

1.

25. 25. The substrate support of claim 1, wherein the first density of the first group of substrate support features and the second density of the second group of substrate support features are each a constant density.

26. 23. The substrate support of claim 1, wherein the diameters of the plurality of substrate support features increase stepwise in the radial direction.

27. 23. The substrate support of claim 1, wherein the diameters of the plurality of substrate support features increase across multiple groups of substrate support features.

28. 23. The substrate support of claim 1, wherein the radial direction is a radial direction outward from the center to the edge.

29. 23. The substrate support of claim 1, wherein the radial direction is radially inward from the edge to the center.

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