Backup power supply control system, backup power supply system, and mobile body

Abstract

This backup power supply control system comprises: a first semiconductor switch for switching a main power supply path between a conductive state and a cutoff state; and a sub-power supply switch for switching a sub-power supply path between a conductive state and a cutoff state. In a failed state, a second drive unit controls the sub-power supply switch to be ON. In a non-failed state, a first drive unit controls a second semiconductor switch connected between the gate and the source of the first semiconductor switch so as to control the first semiconductor switch to be ON. In the failed state, the first drive unit ensures at least the gate plateau voltage of the first semiconductor switch as a driving voltage for the second semiconductor switch, and upon detection of the failed state by a failure detection unit detects, the first drive unit controls the second semiconductor switch to be ON so as to control the first semiconductor switch to be OFF.

Description

[Technical Field]

[0001] The present disclosure relates to a backup power supply control system, a backup power supply system, and a mobile object. More particularly, the present disclosure relates to a backup power supply control system, a backup power supply system, and a mobile object that can supply power to a load from a secondary power supply when a primary power supply fails. [Background technology]

[0002] The boost power supply circuit described in Patent Document 1 supplies power from a lithium-ion battery, which is a backup power supply, to various loads when power supply from the battery is stopped. The boost power supply circuit boosts the DC voltage of the lithium-ion battery and supplies power to the various loads. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-5481 Summary of the Invention

[0004] In the boost power supply circuit of Patent Document 1, when the battery (main power supply) fails, power is supplied to the load from a lithium-ion battery (secondary power supply), but the MOSFET connected between the battery and the load is turned off to prevent power supplied from the lithium-ion battery from flowing to the battery. Because the MOSFET has parasitic capacitance between its gate and source, it takes time to turn off, and when the battery fails, there is a possibility that the MOSFET connected between the battery and the load will be delayed in switching from on to off. If the MOSFET's turn-off is delayed when the battery fails, there is a possibility that the start of power supply from the lithium-ion battery to the load will be delayed.

[0005] An object of the present disclosure is to provide a backup power supply control system, a backup power supply system, and a mobile body that can shorten the time it takes for a secondary power supply to be able to supply power to a load when the main power supply fails.

[0006] A backup power supply control system according to one aspect of the present disclosure includes a first semiconductor switch, a secondary power supply switch, a failure detection unit, a first drive unit, and a second drive unit. The first semiconductor switch switches a main power supply path connecting a main power supply and a load between a conductive state and a cut-off state. The secondary power supply switch switches a secondary power supply path connecting the secondary power supply and the load between a conductive state and a cut-off state. The failure detection unit detects whether the main power supply is in a failed state or a non-failed state. The first drive unit controls the first semiconductor switch to be on when the main power supply is in a non-failed state and to be off when the main power supply is in a failed state. The second drive unit controls the secondary power supply switch to be off when the main power supply is in a non-failed state and to be on when the main power supply is in a failed state. The first semiconductor switch is a MISFET. The first drive unit includes a voltage divider circuit that applies a voltage obtained by dividing the voltage of the main power supply path between the gate and source of the first semiconductor switch, and a second semiconductor switch connected between the gate and source of the first semiconductor switch. When the failure detection unit detects the non-fault state, the first drive unit controls the second semiconductor switch to turn off, thereby controlling the first semiconductor switch to turn on. In the fault state, the first drive unit ensures at least the gate plateau voltage of the first semiconductor switch as the drive voltage for the second semiconductor switch. When the failure detection unit detects the fault state, the first drive unit controls the second semiconductor switch to turn on, thereby controlling the first semiconductor switch to turn off.

[0007] A backup power supply system according to an aspect of the present disclosure includes the backup power supply control system and the secondary power supply, and the backup power supply control system enables the secondary power supply to supply power to the load when the main power supply fails.

[0008] A mobile body according to one aspect of the present disclosure includes the backup power supply system and a mobile body, the backup power supply system and the load being mounted on the mobile body.

[0009] According to the present disclosure, it is possible to reduce the time it takes for the secondary power supply to be able to supply power to a load when the main power supply fails. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a schematic circuit diagram of a backup power supply control system according to an embodiment of the present disclosure and a backup power supply system including the same. [Figure 2] FIG. 2 is an explanatory diagram illustrating the gate-source voltage Vgs, the drain-source voltage Vds, and the drain current Id of the first semiconductor switch provided in the backup power supply control system. [Figure 3] FIG. 3 is an explanatory diagram of the gate-source voltage Vgs of the first and third semiconductor switches included in the backup power supply control system when the main power supply fails. [Figure 4] FIG. 4 is a side view, with a part cut away, of a vehicle equipped with the backup power supply system. DETAILED DESCRIPTION OF THE INVENTION

[0011] (Embodiment) (1) Overview The drawings described in the following embodiments are schematic drawings, and the ratios of the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0012] A backup power supply control system 10 according to this embodiment and a backup power supply system 1 including the same will be described with reference to the drawings. The configuration described in this embodiment is merely an example of the present disclosure. The present disclosure is not limited to this embodiment, and various modifications can be made depending on the design, etc., as long as they do not deviate from the technical concept of the present disclosure.

[0013] The backup power supply system 1 is mounted on, for example, a vehicle 100 (see FIG. 4 ). The backup power supply system 1 is used to supply power from a secondary power supply E2 to a load 50 in the event of a failure of a main power supply E1 mounted on the vehicle 100. As a result, even in the event of a failure of the main power supply E1, the load 50 can continue to operate by receiving power from the secondary power supply E2. Here, a “failure state” in which the main power supply E1 fails refers to a state in which the supply of power from the main power supply E1 to the load 50 is stopped due to a malfunction or deterioration of the main power supply E1, or a break or short circuit in the wiring connecting the main power supply E1 and the load 50. Note that the stoppage of power supply includes a state in which the output voltage V1 output from the main power supply E1 to the load 50 becomes zero, and may also include a state in which the output voltage V1 of the main power supply E1 falls below the minimum operating voltage of the load 50. In addition, the "non-fault state" of the main power supply E1 includes a state in which power is being supplied from the main power supply E1 to the load 50, and also includes a state in which the output voltage V1 output from the main power supply E1 to the load 50 is equal to or greater than the minimum operating voltage of the load 50.

[0014] The backup power supply control system 10 of this embodiment includes a first semiconductor switch Q1, a secondary power supply switch Q5, a failure detection unit 11, a first drive unit 12, and a second drive unit 13.

[0015] The first semiconductor switch Q1 switches the main power supply path LN1 connecting the main power supply E1 and the load 50 between a conductive state and a cut-off state.

[0016] The secondary power supply switch Q5 switches the secondary power supply path LN2 connecting the secondary power supply E2 and the load 50 between a conductive state and a cut-off state.

[0017] The failure detection unit 11 detects whether the main power supply E1 is in a failure state or not.

[0018] The first driver 12 controls the first semiconductor switch Q1 to be on in a normal state and to be off in a failed state.

[0019] The second drive unit 13 controls the auxiliary power supply switch Q5 to be OFF in a non-failure state, and to be ON in a failure state.

[0020] The first semiconductor switch Q1 is a metal-insulator-semiconductor field-effect transistor (MISFET).

[0021] The first drive unit 12 includes a voltage divider circuit 15 that applies a divided voltage of the main power supply path LN1 (i.e., the output voltage V1 of the main power supply E1) between the gate and source of the first semiconductor switch Q1, and a second semiconductor switch Q2 that is connected between the gate and source of the first semiconductor switch Q1.

[0022] When the malfunction detection unit 11 detects a non-malfunction state, the first drive unit 12 controls the second semiconductor switch Q2 to be off, thereby controlling the first semiconductor switch Q1 to be on.

[0023] In a failure state, the first driver 12 ensures that the drive voltage for the second semiconductor switch Q2 is at least the gate plateau voltage of the first semiconductor switch Q1.

[0024] When the malfunction detection unit 11 detects a malfunction state, the first drive unit 12 controls the second semiconductor switch Q2 to be on, thereby controlling the first semiconductor switch Q1 to be off.

[0025] In the event of a failure of the main power supply E1, the second semiconductor switch Q2 must be turned on to turn off the first semiconductor switch Q1. However, a drive voltage for the second semiconductor switch Q2 must be maintained even in the event of a short circuit in the wire connecting the main power supply E1 and the backup power supply control system 10. Figure 2 shows the gate-source voltage Vgs, drain-source voltage Vds, and drain current Id when a constant current is applied to the gate of the first semiconductor switch Q1, which is a MISFET. When a constant current is applied to the gate of the first semiconductor switch Q1 and the gate-source voltage Vgs exceeds the threshold voltage Vth1, the drain current Id begins to flow. When the gate-source voltage Vgs reaches the gate plateau voltage Vp, the drain current Id saturates and the drain-source voltage Vds begins to drop. When the first semiconductor switch Q1 is fully turned on, the Miller effect disappears, and the rate of increase of the gate-source voltage Vgs becomes steeper.

[0026] When the charge stored in the gate capacitance of the first semiconductor switch Q1 is released during a short circuit of the main power supply E1, the gate-source voltage Vgs of the first semiconductor switch Q1 decreases in accordance with the decrease in the amount of charge stored in the gate capacitance. However, there is a period during which the gate-source voltage Vgs remains substantially constant at the gate plateau voltage Vp. In this embodiment, even when a short circuit of the main power supply E1 occurs, the first drive unit 12 maintains at least the gate plateau voltage Vp as the drive voltage for the second semiconductor switch Q2, thereby enabling the second semiconductor switch Q2 to be turned on. Note that the first drive unit 12 may maintain a residual voltage generated in the capacitive component of the load 50 in addition to the gate plateau voltage Vp of the first semiconductor switch Q1 as the drive voltage for the second semiconductor switch Q2. The backup power supply control system 10 also includes a capacitor C1 connected between the reference potential and the electrical path between the first semiconductor switch Q1 and the load 50 in the main power supply path LN1. The capacitor C1 may be, for example, an electrolytic capacitor, and the first drive unit 12 may use the remaining voltage of the capacitor C1 as the drive voltage for the second semiconductor switch Q2. In this way, even if the main power supply E1 fails, the first drive unit 12 controls the second semiconductor switch Q2 to turn on using at least the gate plateau voltage Vp of the first semiconductor switch Q1 as the drive voltage, thereby shorting the gate and source of the first semiconductor switch Q1 and switching the first semiconductor switch Q1 from on to off.

[0027] In a drive circuit in which a first resistor and a second resistor are connected between the gate and source of a first semiconductor switch Q1 and a switch is connected between the junction of the first and second resistors and a reference potential, the first semiconductor switch Q1 is turned off by turning off the switch and discharging the charge stored in the gate capacitance of the first semiconductor switch Q1 into the first and second resistors. In this case, the turn-off time of the first semiconductor switch Q1 is determined by the gate capacitance of the first semiconductor switch Q1 and the discharge time constant of the first and second resistors between the gate and source, which can result in a long turn-off time. Furthermore, if the resistance values ​​of the first and second resistors between the gate and source are reduced to shorten the discharge time constant, there is a problem that the dark current flowing through the resistors connected between the source and the reference potential increases in a non-fault state.

[0028] In contrast, the first drive unit 12 of this embodiment controls the second semiconductor switch Q2 to turn on and short-circuits the gate and source of the first semiconductor switch Q1 with the second semiconductor switch Q2, thereby turning off the first semiconductor switch Q1. This allows the charge stored in the gate capacitance of the first semiconductor switch Q1 to be discharged quickly via the second semiconductor switch Q2, thereby shortening the time from when the main power supply E1 fails until the first semiconductor switch Q1 turns off. This allows the backup power supply control system 10 to shorten the time until the secondary power supply E2 can supply power to the load 50 when the main power supply E1 fails. Furthermore, setting the impedance of the voltage-divider circuit 15 to a high value does not affect the time it takes for the first semiconductor switch Q1 to switch from on to off, so setting the impedance of the voltage-divider circuit 15 to a high value can reduce dark current.

[0029] The backup power supply system 1 of this embodiment also includes a backup power supply control system 10 and a secondary power supply E2. When a failure occurs in the main power supply E1, the backup power supply control system 10 makes it possible to supply power to the load 50 from the secondary power supply E2.

[0030] The backup power supply system 1 of this embodiment is mounted on a mobile object (for example, a vehicle 100) equipped with a load 50 (see FIG. 4). That is, the mobile object, vehicle 100, is equipped with the backup power supply system 1 described above and a main body 101, which is the main body of the mobile object. The backup power supply system 1 and the load 50 are mounted on the main body 101.

[0031] In the following embodiment, the backup power supply system 1 is mounted on a vehicle 100 such as an automobile, but the backup power supply system 1 may also be mounted on a moving body other than the vehicle 100 (for example, an airplane, a ship, or a train). In this case, the vehicle 100 has a plurality of loads 50 that receive power from the secondary power supply E2 when the main power supply E1 fails. The plurality of loads 50 include, for example, electric actuators (for example, a brake system, a power steering system, etc.), and control circuits (ECU: Electronic Control Unit) that control the actuators.

[0032] (2) Details A backup power supply control system 10 according to this embodiment and a backup power supply system 1 including the same will be described in detail below with reference to the drawings.

[0033] (2.1) Configuration Each component of the backup power supply system 1 will be described in detail below.

[0034] As described above, the backup power supply system 1 includes the backup power supply control system 10 and the secondary power supply E2.

[0035] The backup power supply control system 10 includes an input terminal P1 to which the main power supply E1 is electrically connected, and an output terminal P2 to which the load 50 is electrically connected. As described above, the backup power supply control system 10 further includes a first semiconductor switch Q1, a second semiconductor switch Q2, a secondary power supply switch Q5, a failure detection unit 11, a first drive unit 12, a second drive unit 13, and an on / off detection unit 14.

[0036] When there is no failure of the main power supply E1 (non-failure state), the backup power supply control system 10 supplies the output power of the main power supply E1 to the load 50. In other words, when there is no failure, the backup power supply control system 10 switches the main power supply path LN1 connecting the main power supply E1 and the load 50 to a conductive state and switches the sub-power supply path LN2 connecting the sub-power supply E2 and the load 50 to a cut-off state.

[0037] Furthermore, in a state where a failure occurs in the main power supply E1 (failure state), the backup power supply control system 10 switches the secondary power supply E2 to a state where it can supply power to the load 50 instead of the main power supply E1. That is, in the failure state, the backup power supply control system 10 switches the main power supply path LN1 to a cutoff state and the secondary power supply path LN2 to a conductive state.

[0038] Here, the main power supply E1 is, for example, a 12V or 24V battery mounted on the vehicle 100. The auxiliary power supply E2 is a chargeable and dischargeable power storage device that is charged by the main power supply E1 when there is no failure and supplies power to the load 50 instead of the main power supply E1 when there is a failure. The auxiliary power supply E2 includes a power storage device such as an electric double layer capacitor, but may also include a power storage device such as a lithium ion battery or a nickel-metal hydride battery.

[0039] The main power supply path LN1 is an electric path for supplying the output power of the main power supply E1 to the load 50. The backup power supply control system 10 includes a part of the main power supply path LN1, and a first semiconductor switch Q1 is electrically connected between an input terminal P1 and an output terminal P2.

[0040] The auxiliary power supply path LN2 is a current path for supplying the output power of the secondary power supply E2 to the load 50. A charging circuit 30 for charging the secondary power supply E2 is connected to a branch path LN3 branched from a branch point P3 between the first semiconductor switch Q1 and the output terminal P2 in the main power supply path LN1, and the charging circuit 30 charges the secondary power supply E2 with power supplied from the main power supply E1. The auxiliary power supply path LN2 is connected to the main power supply path LN1 at a junction P4 between the branch point P3 and the output terminal P2 in the main power supply path LN1. A step-down circuit 40 is connected in the auxiliary power supply path LN2 between the secondary power supply E2 and the secondary power supply switch Q5. The step-down circuit 40 converts the output voltage of the secondary power supply E2 into a DC voltage having a voltage value suitable for the load 50 and supplies the DC voltage to the load 50.

[0041] The first semiconductor switch Q1 is inserted in the main power supply path LN1. Specifically, the drain of the first semiconductor switch Q1 is electrically connected to the input terminal P1, and the source of the first semiconductor switch Q1 is electrically connected to the output terminal P2. The first semiconductor switch Q1 is a MISFET, and in this embodiment, it is, for example, a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The first semiconductor switch Q1 is switched on / off by a first drive unit 12. Depending on whether the first semiconductor switch Q1 is on / off, the main power supply path LN1 is switched to a conductive state or a cut-off state in the direction in which current flows from the load 50 to the main power supply E1. In this embodiment, the first semiconductor switch Q1 has a parasitic diode. Therefore, the first semiconductor switch Q1 cannot block current flowing from the main power supply E1 to the load 50, and power can be supplied from the main power supply E1 to the load 50 in a normal state. In this embodiment, the first semiconductor switch Q1 is configured to be able to cut off current in one direction, but it may be configured to be able to cut off current in both directions.

[0042] The auxiliary power supply switch Q5 is electrically connected between the step-down circuit 40 and the junction P4. The auxiliary power supply switch Q5 is, for example, an electromagnetic relay, and is switched on / off by the second drive unit 13.

[0043] The failure detection unit 11 detects whether the main power supply E1 is in a failure state or a normal state. The failure detection unit 11 detects whether the main power supply E1 is in a failure state or a normal state based on the voltage value of the output voltage V1 of the main power supply E1. Specifically, the failure detection unit 11 has a comparator CP1 that compares the voltage input from the main power supply E1 to the input terminal P1 (the output voltage V1 of the main power supply E1) with a reference voltage V2. The reference voltage V2 is a threshold value for determining whether the main power supply E1 is in a failure state or a normal state. In a normal state, the output voltage V1 is equal to or greater than the reference voltage V2, and the voltage level of the output voltage of the comparator CP1 is low. On the other hand, in a failure state, the output voltage V1 is less than the reference voltage V2, and the voltage level of the output voltage of the comparator CP1 is high. The output terminal of the comparator CP1 is connected to the gate of a fourth semiconductor switch Q4 provided in the first drive unit 12.

[0044] The first driving section 12 includes a voltage dividing circuit 15, a second semiconductor switch Q2, and a fourth semiconductor switch Q4.

[0045] The voltage-divider circuit 15 includes a series circuit of a resistor R1, which is a first impedance element, and a resistor R2, which is a second impedance element. Specifically, the voltage-divider circuit 15 includes a series circuit of resistors R1 and R2 connected between the source of the first semiconductor switch Q1 and the reference potential of the main power supply E1 (the reference potential of the backup power supply control system 10). The junction of the resistors R1 and R2 is connected to the gate of the first semiconductor switch Q1. Specifically, the resistor R1, which is a first impedance element, is connected between the gate and source of the first semiconductor switch Q1, and the resistor R2, which is a second impedance element, is connected between the gate of the first semiconductor switch Q1 and the reference potential of the main power supply E1. Therefore, the voltage obtained by dividing the output voltage V1 of the main power supply E1 by the resistors R1 and R2 (the voltage across the resistor R1) is applied between the gate and source of the first semiconductor switch Q1.

[0046] A diode D1 is connected in parallel with the low-side resistor R2. The cathode of the diode D1 is connected to the gate of the first semiconductor switch Q1, and the anode of the diode D1 is connected to the reference potential of the main power supply E1. The provision of the diode D1 forms a discharge path through which charge flows from the reference potential to the source of the first semiconductor switch Q1 via the diode D1. Therefore, in the event of a failure of the main power supply E1 due to a short circuit, the charge stored in the gate-source capacitance of the first semiconductor switch Q1 can be discharged via the above discharge path including the diode D1. Furthermore, since the gate potential of the first semiconductor switch Q1 is clamped to a voltage that is lower than the reference potential by the forward voltage of the diode D1, the drive voltage for the second semiconductor switch Q2 is ensured by at least the gate plateau voltage Vp of the first semiconductor switch Q1. Therefore, in the event of a failure of the main power supply E1, the second semiconductor switch Q2 can be switched from off to on using at least the gate plateau voltage as a drive voltage, and the first semiconductor switch Q1 can be switched from on to off in a short time.

[0047] Here, to reduce dark current in a non-fault state, the combined resistance of resistors R1 and R2 is preferably set to a resistance value of approximately several MΩ. Furthermore, the impedance value of resistor R1, which is the first impedance element, is set to a value greater than the impedance value of resistor R2, which is the second impedance element. The resistance value of resistor R1 is preferably set to a resistance value approximately tens to hundreds of times greater than the resistance value of resistor R2 so that the gate-source voltage of first semiconductor switch Q1 exceeds the threshold voltage. In this embodiment, voltage-dividing circuit 15 is configured as a series circuit of resistor R1, which is the first impedance element, and resistor R2, which is the second impedance element. However, the first impedance element and the second impedance element are not limited to resistors R1 and R2 and can be changed as appropriate.

[0048] A second semiconductor switch Q2 is connected between the gate and source of the first semiconductor switch Q1. The second semiconductor switch Q2 is a MISFET, e.g., a P-channel MOSFET in this embodiment. The source of the second semiconductor switch Q2 is connected to the source of the first semiconductor switch Q1, and the drain of the second semiconductor switch Q2 is connected to the gate of the first semiconductor switch Q1. A resistor R3 is connected between the gate and source of the second semiconductor switch Q2. The gate of the second semiconductor switch Q2 is connected to the drain of a fourth semiconductor switch Q4, which is an N-channel MOSFET, and the source of the fourth semiconductor switch Q4 is connected to the reference potential of the main power supply E1. The gate of the fourth semiconductor switch Q4 is connected to the output terminal of the comparator CP1. The fourth semiconductor switch Q4 is switched on / off according to the output of the failure detection unit 11. It is turned off when there is no failure and turned on when there is a failure.

[0049] The on / off detection unit 14 detects whether the first semiconductor switch Q1 is on or off. The on / off detection unit 14 includes a third semiconductor switch Q3 and a resistor R4. The third semiconductor switch Q3 is a MISFET, and in this embodiment, is a P-channel MOSFET like the first semiconductor switch Q1. The sources of the first semiconductor switch Q1 and the third semiconductor switch Q3 are connected to each other, and the gates are connected to each other. The drain of the third semiconductor switch Q3 is connected to the reference potential of the main power supply E1 via a resistor R4. The third semiconductor switch Q3 uses a MOSFET whose turn-off voltage is lower than that of the first semiconductor switch Q1. That is, the threshold voltage Vth3 at which the third semiconductor switch Q3 switches from on to off is equal to or lower than the threshold voltage Vth1 at which the first semiconductor switch Q1 switches from on to off.

[0050] A voltage corresponding to the gate-source voltage of the first semiconductor switch Q1 is applied between the gate and source of the third semiconductor switch Q3. In this embodiment, this voltage is approximately the same as the gate-source voltage of the first semiconductor switch Q1. Note that the two voltages being approximately the same does not necessarily mean that they are exactly the same voltage, but may also include a state in which the difference between the two voltages is within a predetermined tolerance. The on / off detection unit 14 indirectly detects the on / off state of the first semiconductor switch Q1 based on the on / off state of the third semiconductor switch Q3 and outputs an output signal having a signal level corresponding to the on / off state of the first semiconductor switch Q1 to the second drive unit 13. In this embodiment, the on / off detection unit 14 outputs a high-level output signal to the second drive unit 13 when the third semiconductor switch Q3 is on, and outputs a low-level output signal to the second drive unit 13 when the third semiconductor switch Q3 is off.

[0051] The second driver 13 has a NOT gate N1. The voltage signal at the junction P5 between the third semiconductor switch Q3 and resistor R4 is input to the input terminal of the NOT gate N1 as the output signal of the on / off detector 14. When the third semiconductor switch Q3 is on in a non-fault state, the voltage level of the voltage signal at the junction P5 becomes high, and the voltage level of the output terminal of the NOT gate N1 becomes low. At this time, the secondary power switch Q5 is turned off, and the secondary power supply path LN2 is in a cutoff state. On the other hand, when the third semiconductor switch Q3 is off in a fault state, the voltage level of the voltage signal at the junction P5 becomes low, and the voltage level of the output terminal of the NOT gate N1 becomes high. At this time, the secondary power switch Q5 is turned on, and the secondary power supply path LN2 is in a conductive state.

[0052] That is, when the on / off detection unit 14 detects that the first semiconductor switch Q1 is on, the second drive unit 13 controls the auxiliary power supply switch Q5 to be off. When the on / off detection unit 14 detects that the first semiconductor switch Q1 is off, the second drive unit 13 controls the auxiliary power supply switch Q5 to be on.

[0053] The backup power supply system 1 also includes a backup power supply control system 10 and a secondary power supply E2. In this embodiment, the backup power supply system 1 further includes a charging circuit 30 and a step-down circuit 40. It is not essential that the backup power supply system 1 includes the charging circuit 30 and the step-down circuit 40, and the charging circuit 30 and the step-down circuit 40 can be omitted as appropriate.

[0054] The charging circuit 30 is, for example, a dropper-type charging circuit, and uses the main power supply E1 as a power source to supply a charging current to the secondary power supply E2, thereby charging the secondary power supply E2.

[0055] The step-down circuit 40 is, for example, a step-down chopper type power supply circuit. The step-down circuit 40 steps down the output voltage of the secondary power supply E2, converts it into a DC voltage of a voltage value suitable for the load 50, and supplies it to the load 50.

[0056] (2.2) Operation explanation The main operations of the backup power supply system 1 will be described below with reference to the drawings.

[0057] (2.2.1) Main power supply non-failure When the main power supply E1 is in a normal state, the voltage level of the output voltage of the comparator CP1 becomes low, and the fourth semiconductor switch Q4 turns off. When the fourth semiconductor switch Q4 is off, no potential difference occurs between the gate and source of the second semiconductor switch Q2, and the second semiconductor switch Q2 turns off.

[0058] At this time, a voltage obtained by dividing the output voltage V1 of the main power supply E1 by the voltage divider circuit 15 is generated between the gate and source of the first semiconductor switch Q1, turning on the first semiconductor switch Q1 and bringing the main power supply path LN1 into a conductive state, thereby supplying power from the main power supply E1 to the load 50 via the main power supply path LN1.

[0059] A voltage obtained by dividing the output voltage V1 of the main power supply E1 by the voltage divider circuit 15 is also generated between the gate and source of the third semiconductor switch Q3, turning on the third semiconductor switch Q3. At this time, the voltage level of the output voltage of the NOT gate N1 becomes low, turning off the secondary power supply switch Q5, and thus cutting off the secondary power supply path LN2.

[0060] As a result, when the main power supply E1 is in a normal state, the main power supply path LN1 is in a conductive state and the auxiliary power supply path LN2 is in a cut-off state, so that power is supplied from the main power supply E1 to the load 50 via the main power supply path LN1. Also, power is supplied from the main power supply E1 to the charging circuit 30 via the branch path LN3, and the charging circuit 30 charges the secondary power supply E2. Note that when the main power supply E1 is in a normal state, the auxiliary power supply path LN2 is in a cut-off state, so that power is not supplied from the secondary power supply E2 to the load 50.

[0061] (2.2.2) Main power failure condition When a failure occurs in the main power supply E1, the voltage level of the output voltage of the comparator CP1 becomes high, and the fourth semiconductor switch Q4 turns on. In the failure state, the output voltage V1 of the main power supply E1 drops below the reference voltage V2. However, immediately after the failure occurs, a residual voltage is generated in the load 50 due to the capacitive component of the load 50. Therefore, the first driver 12 secures the gate plateau voltage Vp of the first semiconductor switch Q1, the residual voltage of the capacitor C1, or the residual voltage generated in the capacitive component of the load 50 as the drive voltage for the second semiconductor switch Q2. Therefore, when the fourth semiconductor switch Q4 turns on, the first driver 12 controls the second semiconductor switch Q2 to turn on using the gate plateau voltage Vp of the first semiconductor switch Q1, the residual voltage of the capacitor C1, or the residual voltage of the load 50 as the drive voltage.

[0062] When the second semiconductor switch Q2 is turned on, the gate and source of the first semiconductor switch Q1 are short-circuited by the second semiconductor switch Q2, causing a sudden drop in the gate-source voltage Vgs of the first semiconductor switch Q1. When the gate-source voltage Vgs of the first semiconductor switch Q1 falls below the threshold voltage Vth1, the first semiconductor switch Q1 switches from on to off, and the first semiconductor switch Q1 switches the main power supply path LN1 from a conductive state to a cut-off state.

[0063] Here, the same voltage as the gate-source voltage Vgs of the first semiconductor switch Q1 is applied between the gate and source of the third semiconductor switch Q3. Because the turn-off voltage (threshold voltage Vth3) of the third semiconductor switch Q3 is lower than the turn-off voltage (threshold voltage Vth1) of the first semiconductor switch Q1, the third semiconductor switch Q3 turns off after the first semiconductor switch Q1 turns off. When the third semiconductor switch Q3 turns off, the voltage level of the output voltage of the NOT gate N1 becomes high, and the secondary power supply switch Q5 turns on, switching the secondary power supply path LN2 from a cut-off state to a conductive state. As a result, power is supplied to the load 50 from the secondary power supply E2 via the secondary power supply path LN2.

[0064] Furthermore, since the main power supply path LN1 is switched to the cut-off state before the sub-power supply path LN2 is switched to the conductive state, the output power from the sub-power supply E2 is not supplied to the circuit on the main power supply E1 side via the main power supply path LN1, and the power of the sub-power supply E2 can be reliably supplied to the load 50.

[0065] In a drive circuit in which a first resistor and a second resistor are connected between the gate and source of a first semiconductor switch Q1 and a second resistor and a switch are connected between the gate and a reference potential, the first semiconductor switch Q1 is turned off by turning off the switch and discharging the charge stored in the gate capacitance of the first semiconductor switch Q1 to the first resistor and the second resistor. When the drive circuit controls the switch Q5 to turn on the secondary power supply switch Q5 after a predetermined time has elapsed since the switch Q5 was turned on, the predetermined time must be set to the maximum time required for the first semiconductor switch Q1 to switch from on to off, taking into account variations in the discharge time constant, etc. Setting the predetermined time longer than the actual required time results in a delay in the start of power supply from the secondary power supply E2 to the load 50, resulting in a longer period of time during which power is not supplied to the load 50.

[0066] In this embodiment, the on / off detection unit 14 detects that the third semiconductor switch Q3 is off, thereby detecting that the first semiconductor switch Q1 is off, and then switches the auxiliary power supply switch Q5 on, thereby shortening the time from when the first semiconductor switch Q1 is turned off until the auxiliary power supply switch Q5 is turned on. This shortens the period during which power is not supplied to the load 50 when the main power supply E1 fails.

[0067] In the backup power supply control system 10 of this embodiment, if the negative output terminal of the main power supply E1 is mistakenly connected to the input terminal P1, the first semiconductor switch Q1 remains off, and therefore a DC voltage of reverse polarity is not applied to the load 50.

[0068] Furthermore, when the main power supply E1 is connected to the backup power supply control system 10 with the correct polarity, if a user disconnects and reconnects the main power supply E1 with the wrong polarity, it takes several milliseconds from disconnecting the main power supply E1 to reconnecting it. In this embodiment, when the main power supply E1 is disconnected, the failure detection unit 11 detects the failure and turns on the fourth semiconductor switch Q4 and the second semiconductor switch Q2, thereby turning off the first semiconductor switch Q1 within several milliseconds. As a result, even if the main power supply E1 is reconnected with the wrong polarity, the first semiconductor switch Q1 is already off, so it is possible to avoid a situation in which a DC voltage of reverse polarity is applied to the load 50.

[0069] (3) Variations The above embodiment is merely one of various embodiments of the present disclosure, and various modifications can be made to the above embodiment depending on the design and the like as long as the object of the present disclosure can be achieved.

[0070] Modifications of the above embodiment are listed below. The modifications described below can be applied in appropriate combinations.

[0071] In the above embodiment, the circuit configurations of the malfunction detection unit 11, the first drive unit 12, the second drive unit 13, the on / off detection unit 14, etc. are merely examples and can be changed as appropriate.

[0072] In the above embodiment, the backup power supply control system 10 includes a portion of the main power supply path LN1, but it is not essential that the backup power supply control system 10 includes the main power supply path LN1. The backup power supply control system 10 may be configured to switch the main power supply path LN1, which is provided outside the backup power supply control system 10, between a conductive state and a cut-off state by turning on and off a first semiconductor switch Q1 connected to the main power supply path LN1.

[0073] In the above embodiment, the turn-off voltage (threshold voltage Vth3) of the third semiconductor switch Q3 is lower than the turn-off voltage (threshold voltage Vth1) of the first semiconductor switch Q1, but the threshold voltage Vth3 need only be equal to or lower than the threshold voltage Vth1. As a result, the third semiconductor switch Q3 is turned off and the auxiliary power supply switch Q5 is turned on simultaneously with or after the first semiconductor switch Q1 is turned off. Therefore, the auxiliary power supply path LN2 can be switched from the cut-off state to the conduction state simultaneously with or after the main power supply path LN1 is switched from the conduction state to the cut-off state.

[0074] In the above embodiment, the auxiliary power supply switch Q5 is an electromagnetic relay, but the auxiliary power supply switch Q5 is not limited to an electromagnetic relay. The auxiliary power supply switch Q5 may be a semiconductor switch such as a MOSFET, a triac, or an IGBT (Insulated Gate Bipolar Transistor).

[0075] In the above embodiment, the first semiconductor switch Q1 is configured with a single P-channel MOSFET and is configured to be able to switch between a conductive state and a cut-off state in the direction in which current flows from the load 50 to the main power supply E1, but it may also be configured to be able to switch between a conductive state and a cut-off state in both directions. For example, the first semiconductor switch may be configured with a series circuit of two MOSFETs whose sources are connected to each other and may be configured to be able to switch between a conductive state and a cut-off state in both directions.

[0076] (summary) As described above, the backup power supply control system (10) of the first aspect includes a first semiconductor switch (Q1), a secondary power supply switch (Q5), a failure detection unit (11), a first drive unit (12), and a second drive unit (13). The first semiconductor switch (Q1) switches the main power supply path (LN1) connecting the main power supply (E1) and the load (50) between a conductive state and a cut-off state. The secondary power supply switch (Q5) switches the secondary power supply path (LN2) connecting the secondary power supply (E2) and the load (50) between a conductive state and a cut-off state. The failure detection unit (11) detects whether the main power supply (E1) is in a failed state or a non-failed state. The first drive unit (12) controls the first semiconductor switch (Q1) to be on when the main power supply (E1) is in a non-failed state and to be off when the main power supply (E1) is in a failed state. The second drive unit (13) turns off the secondary power switch (Q5) in a non-fault state and turns on the secondary power switch (Q5) in a fault state. The first semiconductor switch (Q1) is a MISFET. The first drive unit (12) includes a voltage divider circuit (15) that applies a divided voltage from the main power supply path (LN1) between the gate and source of the first semiconductor switch (Q1), and a second semiconductor switch (Q2) connected between the gate and source of the first semiconductor switch (Q1). When the fault detection unit (11) detects a non-fault state, the first drive unit (12) turns off the second semiconductor switch (Q2) to turn on the first semiconductor switch (Q1). In a fault state, the first drive unit (12) ensures that the drive voltage for the second semiconductor switch (Q2) is at least equal to the gate plateau voltage of the first semiconductor switch (Q1). When the malfunction detection section (11) detects a malfunction, the first drive section (12) controls the second semiconductor switch (Q2) to be on, thereby controlling the first semiconductor switch (Q1) to be off.

[0077] According to this aspect, even if the main power supply (E1) fails, the first drive unit (12) controls the second semiconductor switch (Q2) to be on using at least the gate plateau voltage as a drive voltage, thereby shorting the gate and source of the first semiconductor switch (Q1) and switching the first semiconductor switch (Q1) from on to off. Furthermore, the first drive unit (12) controls the second semiconductor switch (Q2) to be on, shorting the gate and source of the first semiconductor switch (Q1) with the second semiconductor switch (Q2), thereby switching the first semiconductor switch (Q1) off. This reduces the time it takes for the first semiconductor switch (Q1) to be switched off after the main power supply (E1) fails. This provides a backup power supply control system (10) that can reduce the time it takes for the secondary power supply (E2) to be able to supply power to the load (50) when the main power supply (E1) fails.

[0078] The backup power supply control system (10) of the second aspect is the same as that of the first aspect, but further includes an on / off detection unit (14) that detects whether the first semiconductor switch (Q1) is on or off. When the on / off detection unit (14) detects that the first semiconductor switch (Q1) is on, the second drive unit (13) controls the auxiliary power supply switch (Q5) to be off. When the on / off detection unit (14) detects that the first semiconductor switch (Q1) is off, the second drive unit (13) controls the auxiliary power supply switch (Q5) to be on.

[0079] According to this aspect, the auxiliary power supply switch (Q5) is controlled to be turned on after the first semiconductor switch (Q1) is turned off, so that it is possible to prevent the power output from the auxiliary power supply (E2) from being supplied to the circuit on the main power supply (E1) side, and it is possible to reduce the possibility of a decrease in the power supplied from the auxiliary power supply (E2) to the load (50).

[0080] In the backup power supply control system (10) of the third aspect, in the second aspect, the on / off detection unit (14) includes a third semiconductor switch (Q3) that is a MISFET. A voltage corresponding to the gate-source voltage of the first semiconductor switch (Q1) is applied between the gate and source of the third semiconductor switch (Q3). The on / off detection unit (14) detects the on / off of the first semiconductor switch (Q1) based on the on / off of the third semiconductor switch (Q3).

[0081] According to this embodiment, the on / off detection section (14) can indirectly detect the on / off of the first semiconductor switch (Q1) based on the on / off of the third semiconductor switch (Q3).

[0082] In the backup power supply control system (10) of the fourth aspect, the gates of the first semiconductor switch (Q1) and the third semiconductor switch (Q3) are electrically connected to each other and the sources of the first semiconductor switch (Q1) and the third semiconductor switch (Q3) are electrically connected to each other, and the threshold voltage (Vth3) at which the third semiconductor switch (Q3) switches from on to off is equal to or lower than the threshold voltage (Vth1) at which the first semiconductor switch (Q1) switches from on to off.

[0083] According to this aspect, even if there is variation in the threshold voltage (Vht1) of the first semiconductor switch (Q1), the on / off detection unit (14) can more reliably detect that the first semiconductor switch (Q1) is off because the third semiconductor switch (Q3) is off.

[0084] In a backup power supply control system (10) of a fifth aspect, in any one of the first to fourth aspects, the second semiconductor switch (Q2) is a MISFET having a source connected to the source of the first semiconductor switch (Q1) and a drain connected to the gate of the first semiconductor switch (Q1). The first drive unit (12) further includes a resistor (R3) and a fourth semiconductor switch (Q4). The resistor (R3) is connected between the gate and source of the second semiconductor switch (Q2). The fourth semiconductor switch (Q4) is connected between the gate of the second semiconductor switch (Q2) and a reference potential, and is turned off in a normal state and turned on in a fault state.

[0085] According to this aspect, by turning on the fourth semiconductor switch (Q4) of the first drive section (12), the second semiconductor switch (Q2) can be turned on and the first semiconductor switch (Q1) can be turned off.

[0086] In a backup power supply control system (10) of a sixth aspect, in any one of the first to fifth aspects, the voltage dividing circuit (15) includes a first impedance element (R1) connected between the gate and source of the first semiconductor switch (Q1) and a second impedance element (R2) connected between the gate of the first semiconductor switch (Q1) and a reference potential of the main power supply (E1). The impedance value of the first impedance element (R1) is greater than the impedance value of the second impedance element (R2).

[0087] According to this embodiment, when the main power supply (E1) is in a normal state, the voltage divider circuit (15) applies a voltage exceeding the threshold voltage (Vth1) between the gate and source of the first semiconductor switch (Q1), thereby turning on the first semiconductor switch (Q1).

[0088] In a seventh aspect of the backup power supply control system (10), in the sixth aspect, a diode (D1) is further provided, the cathode of which is connected to the gate of the first semiconductor switch (Q1) and the anode of which is connected to a reference potential.

[0089] According to this embodiment, even if a gate plateau voltage of the first semiconductor switch (Q1) occurs when the main power supply (E1) fails, the gate potential of the first semiconductor switch (Q1) can be clamped to a voltage that is lower than the reference potential by the forward voltage of the diode (D1). Therefore, the second semiconductor switch (Q2) can be controlled to be on by a drive voltage that includes at least the gate plateau voltage of the first semiconductor switch (Q1).

[0090] In the backup power supply control system (10) of the eighth aspect, in any one of the first to seventh aspects, the first semiconductor switch (Q1) is a P-channel MOSFET.

[0091] According to this embodiment, it is possible to realize a backup power supply control system (10) that can reduce the time required for the secondary power supply (E2) to be able to supply power to the load (50) when the main power supply (E1) fails.

[0092] A backup power supply system (1) of a ninth aspect includes the backup power supply control system (10) of any one of the first to eighth aspects and a secondary power supply (E2). When the main power supply (E1) fails, the backup power supply control system (10) enables the secondary power supply (E2) to supply power to the load (50).

[0093] According to this embodiment, it is possible to realize a backup power supply system (1) that can reduce the time required for the secondary power supply (E2) to be able to supply power to the load (50) when the main power supply (E1) fails.

[0094] In the backup power supply system (1) of the tenth aspect, in the ninth aspect, the auxiliary power supply (E2) includes an electric double layer capacitor.

[0095] According to this embodiment, a backup power supply system (1) equipped with a secondary power supply (E2) including an electric double layer capacitor can be realized.

[0096] The backup power supply system (1) of an eleventh aspect is the ninth or tenth aspect, further comprising a charging circuit (30) that charges the secondary power supply (E2) with power supplied from the main power supply (E1).

[0097] According to this embodiment, when the main power supply (E1) is in a normal state, power can be supplied from the main power supply (E1) to the load (50) and the secondary power supply (E2) can be charged, and when the main power supply (E1) is in a failure state, power can be supplied from the secondary power supply (E2) to the load (50).

[0098] A mobile body (100) of a twelfth aspect includes the backup power supply system (1) of any one of the ninth to eleventh aspects and a mobile body (101). The mobile body (101) is equipped with the backup power supply system (1) and a load (50).

[0099] According to this embodiment, it is possible to realize a mobile object (100) equipped with a backup power supply system (1) that can shorten the time it takes for the secondary power supply (E2) to start supplying power when the main power supply (E1) fails.

[0100] The configurations according to the second to eighth aspects are not essential for the backup power supply control system 10 and may be omitted as appropriate. The configurations according to the tenth and eleventh aspects are not essential for the backup power supply system 1 and may be omitted as appropriate. [Explanation of symbols]

[0101] 1. Backup Power System 10 Backup power control system 11 Failure detection unit 12 First drive unit 13 Second drive unit 14 On / off detection unit 15 Voltage divider circuit 30 Charging circuit 50 load 100 Vehicles (moving objects) 101 Main body (mobile body) D1 Diode E1 Main power supply E2 sub power supply LN1 main power supply path LN2 sub-power supply path Q1 First semiconductor switch Q2 Second semiconductor switch Q3 Third semiconductor switch Q4 Fourth semiconductor switch Q5 Sub power switch R1 Resistor (first impedance element) R2 Resistor (second impedance element) R3 resistor Vth1, Vth3 threshold voltage

Claims

1. a first semiconductor switch that switches a main power supply path connecting the main power supply and the load between a conductive state and a cut-off state; a secondary power supply switch that switches a secondary power supply path connecting the secondary power supply and the load between a conductive state and a cut-off state; a failure detection unit that detects whether the main power supply is in a failure state or a non-failure state; a first drive unit that controls the first semiconductor switch to be on in the non-failure state and to be off in the failure state; a second drive unit that controls the auxiliary power supply switch to be turned off in the non-failure state and to be turned on in the failure state, the first semiconductor switch is a MISFET; the first drive unit includes a voltage divider circuit that divides a voltage of the main power supply path and applies the divided voltage between a gate and a source of the first semiconductor switch, and a second semiconductor switch that is connected between the gate and the source of the first semiconductor switch, When the malfunction detection unit detects the non-malfunction state, the first drive unit controls the second semiconductor switch to be off, thereby controlling the first semiconductor switch to be on; In the failure state, the first drive unit ensures at least a gate plateau voltage of the first semiconductor switch as a drive voltage of the second semiconductor switch; When the malfunction detection unit detects the malfunction state, the first drive unit controls the second semiconductor switch to be on, thereby controlling the first semiconductor switch to be off. Backup power control system.

2. an on / off detection unit that detects whether the first semiconductor switch is on or off, When the on / off detection unit detects that the first semiconductor switch is on, the second drive unit controls the secondary power supply switch to be off, When the on / off detection unit detects that the first semiconductor switch is off, the second drive unit controls the auxiliary power supply switch to be on. The backup power supply control system according to claim 1 .

3. the on / off detection unit includes a third semiconductor switch that is a MISFET, a voltage corresponding to the gate-source voltage of the first semiconductor switch is applied between the gate and source of the third semiconductor switch; the on / off detection unit detects the on / off of the first semiconductor switch based on the on / off of the third semiconductor switch; The backup power supply control system according to claim 2 .

4. The first semiconductor switch and the third semiconductor switch have their gates electrically connected to each other and their sources electrically connected to each other, a threshold voltage at which the third semiconductor switch switches from on to off is equal to or lower than a threshold voltage at which the first semiconductor switch switches from on to off; The backup power supply control system according to claim 3 .

5. The second semiconductor switch is a MISFET having a source connected to the source of the first semiconductor switch and a drain connected to the gate of the first semiconductor switch; The first driving unit is a resistor connected between the gate and source of the second semiconductor switch; a fourth semiconductor switch connected between the gate of the second semiconductor switch and a reference potential, the fourth semiconductor switch being turned off in the non-fault state and turned on in the fault state; The backup power supply control system according to any one of claims 1 to 4.

6. the voltage divider circuit includes a first impedance element connected between the gate and source of the first semiconductor switch, and a second impedance element connected between the gate of the first semiconductor switch and a reference potential of the main power supply; The impedance value of the first impedance element is greater than the impedance value of the second impedance element. The backup power supply control system according to any one of claims 1 to 5.

7. a diode having a cathode connected to the gate of the first semiconductor switch and an anode connected to the reference potential; The backup power supply control system according to claim 6.

8. the first semiconductor switch is a P-channel MOSFET; The backup power supply control system according to any one of claims 1 to 7.

9. A backup power supply control system according to any one of claims 1 to 8; the auxiliary power supply, the backup power supply control system makes the secondary power supply capable of supplying power to the load when the main power supply fails. Backup power system.

10. the auxiliary power supply includes an electric double layer capacitor; The backup power system of claim 9.

11. a charging circuit that charges the secondary power supply with power supplied from the main power supply; 11. The backup power supply system according to claim 9 or 10.

12. A backup power supply system according to any one of claims 9 to 11; a mobile body on which the backup power supply system and the load are mounted, Mobile object.

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