Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device suitable as a power semiconductor device and a manufacturing method thereof that can achieve heat dissipation design suitable for each semiconductor device even when a plurality of heat-generating semiconductor elements has different heights.SOLUTION: A semiconductor manufacturing device according to the present disclosure is configured such that a first resin heat dissipation material directly or indirectly contacts a heat dissipation surface of a semiconductor element with low heat generation property. The first resin heat dissipation material has an opening that exposes a heat dissipation fin above the heat dissipation surface of the semiconductor element, excluding the semiconductor element that is in direct or indirect contact with the first resin heat dissipation material. The heat dissipation fin is configured to pass through the opening of the first resin heat dissipation material and come into direct or indirect contact with the heat dissipation surface of the semiconductor element, excluding the semiconductor element that directly or indirectly contacts the first resin heat dissipation material.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor device suitable as a power semiconductor device and a method for manufacturing the same. [Background technology]

[0002] In semiconductor devices with multiple semiconductor elements mounted on the same substrate, cooling the heat generated by each semiconductor element requires contacting each semiconductor element with a cooling component such as a heat sink. However, semiconductor elements come in various types, such as insertion type and surface mount type, and often have different heights. Surface mount type semiconductor elements are even shorter than other types of semiconductor elements and may not have screw mounting holes, making contacting them with a cooling component particularly difficult. When the heights of the semiconductor elements differ, a method is used in which the semiconductor elements are brought into contact with a cooling component using a height-adjusting spacer or the like. Alternatively, a method such as that disclosed in Patent Document 1 is disclosed. Patent Document 1 discloses a method of contacting each semiconductor element with a heat sink by processing the heat sink itself to match the height of the semiconductor element. This method enables efficient cooling of each semiconductor element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-198347 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the conventional technology, the only heat dissipation path for cooling the multiple heat-generating semiconductor elements was the heat dissipation fins, which required machining of the heat dissipation fins depending on the height of each semiconductor element, making it difficult to realize a heat dissipation design suitable for each semiconductor device.

[0005] The present disclosure has been made to solve the above-mentioned problems, and its primary objective is to provide a semiconductor device that can realize a heat dissipation design that is suitable for each semiconductor device, even if the heights of multiple heat-generating semiconductor elements are different.

[0006] In addition, the present disclosure has been made to solve the problems described above, and a second object of the present disclosure is to provide a method for manufacturing a semiconductor device that can achieve a heat dissipation design suitable for each semiconductor device, even if the heights of multiple heat-generating semiconductor elements are different. [Means for solving the problem]

[0007] In order to achieve the above object, a first aspect of the present disclosure is A plurality of semiconductor elements having different heights; a substrate on which the plurality of semiconductor elements are mounted; a first resin heat dissipation material having one surface facing the surface of the semiconductor element; a heat dissipation fin thermally coupled to the first resin heat dissipation material on a surface opposite to a surface of the first resin heat dissipation material facing the semiconductor element; Equipped with The plurality of semiconductor elements include: at least one low heat generating semiconductor element; At least one semiconductor element that generates more heat than the semiconductor element that generates less heat. a semiconductor element; The first resin heat dissipation material is The semiconductor element is configured to be in direct or indirect contact with a heat dissipation surface of the semiconductor element that generates little heat, Relatively high heat generation an opening for exposing the heat dissipation fins above the heat dissipation surface of the semiconductor element; The heat dissipation fins are through the opening of the first resin heat dissipation material, Relatively high heat generation The semiconductor device is preferably configured to be in direct or indirect contact with the heat dissipation surface of the semiconductor element.

[0008] In addition, a second aspect of the present disclosure is The semiconductor device includes at least one semiconductor element that generates less heat and at least one semiconductor element that generates more heat than the semiconductor element that generates less heat. creating a substrate having a plurality of semiconductor devices attached thereto; preparing a first resin heat dissipation material disposed opposite a surface of the semiconductor element attached to the substrate; a step of creating a heat dissipation fin; forming a second resin heat dissipation material disposed on a surface of the substrate opposite to the first resin heat dissipation material; a first assembly member fabrication step of fixing the heat dissipation fins to a surface of the first resin heat dissipation material opposite to a surface facing the semiconductor element so as to be thermally coupled to the first resin heat dissipation material, thereby fabricating a first assembly member; a second assembly member fabrication step of fixing the substrate and the second resin heat dissipation material to fabricate a second assembly member; a step of fixing the first assembly member and the second assembly member together; Including fruit, In a state in which the first assembly member and the second assembly member are fixed together, the first resin heat dissipation material an opening for exposing the heat dissipation fins above the heat dissipation surface of the semiconductor element that generates a relatively high amount of heat; The heat dissipation fins are through the opening of the first resin heat dissipation material, Direct or indirect contact with the heat dissipation surface of a semiconductor element that generates relatively high heat. Preferably, the method is a method for manufacturing a semiconductor device. [Effects of the Invention]

[0009] According to the first aspect of the present disclosure, it is possible to provide a semiconductor device that can realize a heat dissipation design that is suitable for each semiconductor device, even if the heights of multiple heat-generating semiconductor elements are different.

[0010] According to the second aspect of the present disclosure, it is possible to provide a method for manufacturing a semiconductor device that can realize a heat dissipation design suitable for each semiconductor device, even if the heights of multiple heat-generating semiconductor elements are different. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present disclosure. [Figure 2]FIG. 10 is a cross-sectional view of a semiconductor device according to a second embodiment of the present disclosure. [Figure 3] FIG. 11 is a cross-sectional view of a semiconductor device according to a third embodiment of the present disclosure. [Figure 4] FIG. 10 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present disclosure. [Figure 5] FIG. 11 is a cross-sectional view of a semiconductor device according to a fifth embodiment of the present disclosure. [Figure 6] FIG. 13 is a cross-sectional view of a semiconductor device according to a sixth embodiment of the present disclosure. [Figure 7] FIG. 13 is a cross-sectional view of a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 8] FIG. 13 is a cross-sectional view of a semiconductor device according to an eighth embodiment of the present disclosure. [Figure 9] FIG. 13 is a cross-sectional view of a semiconductor device according to a ninth embodiment of the present disclosure. [Figure 10] FIG. 22 is a cross-sectional view of a semiconductor device according to a tenth embodiment of the present disclosure. [Figure 11] FIG. 22 is a cross-sectional view of a semiconductor device according to an eleventh embodiment of the present disclosure. [Figure 12] FIG. 23 is a cross-sectional view of a semiconductor device according to a twelfth embodiment of the present disclosure. [Figure 13] FIG. 23 is a cross-sectional view of a semiconductor device according to a thirteenth embodiment of the present disclosure. [Figure 14] FIG. 23 is a cross-sectional view of a semiconductor device according to a fourteenth embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0012] Embodiment 1 FIG. 1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device 1 has a substrate 5a. The semiconductor device 1 has semiconductor elements 2a, 2b, and 2c mounted on the substrate 5a. The terminal shapes of the semiconductor elements 2a, 2b, and 2c may be board insertion type or surface mount type, but are not limited thereto. The semiconductor device 1 also has heat dissipation fins 4a for cooling above the semiconductor elements 2a, 2b, and 2c. The surface of the substrate 5a facing the heat dissipation fins 4a is referred to as the first main surface of the substrate 5a. The surface opposite the first main surface is referred to as the second main surface of the substrate 5a.

[0013] Furthermore, the semiconductor device 1 has housings 6a and 6b on the first and second main surfaces of the substrate 5a. The housings 6a and 6b are attached to the first and second main surfaces of the substrate 5a, respectively, surrounding the substrate 5a and the semiconductor elements 2a, 2b, and 2c. The heat dissipation fins 4a, the substrate 5a, and the housings 6a and 6b are fixed with screws 7a, 7b, and 7c, respectively. The screws 7a, 7b, and 7c can be fastened from either the heat dissipation fin 4a side or the housing 6b side. Alternatively, if the semiconductor elements 2a, 2b, and 2c have screw mounting holes, the screw mounting holes of the semiconductor components may be used. The heat dissipation fins 4a and the housing 6a do not need to be in direct contact with each other; they only need to be thermally coupled.

[0014] In the following embodiments, the semiconductor elements 2a, 2b, and 2c are assumed to have different heights and heat generation capacities. Furthermore, in the following embodiments, unless otherwise specified, the semiconductor element in contact with the housing 6a is assumed to be a semiconductor element with low heat generation capacity. Additionally, the semiconductor element in contact with the heat dissipation fin 4a is assumed to be a semiconductor element with high heat generation capacity. However, the number and arrangement order of the semiconductor elements 2a, 2b, and 2c are merely examples and do not limit the technical scope of the present disclosure.

[0015] The heat dissipation surfaces of the low heat generating semiconductor elements 2a and 2b are indirectly in contact with the housing 6a via the heat dissipation buffer materials 3a and 3b, respectively. By bringing the low heat generating semiconductor elements 2a and 2b into contact with the housing 6a, the low heat generating semiconductor elements 2a and 2b can dissipate heat to the housing 6a.

[0016] The low-heat-generating semiconductor elements 2a, 2b and the housing 6a can be in indirect contact with each other by adjusting the thickness of the heat dissipation buffer materials 3a, 3b. Even if the low-heat-generating semiconductor elements 2a, 2b have different heights, they can be in indirect contact with the housing 6a by inserting heat dissipation buffer materials 3a, 3b of different thicknesses into the semiconductor elements 2a, 2b.

[0017] However, if the heat dissipation buffer materials 3a and 3b are not required in the heat dissipation design of the semiconductor elements 2a and 2b, they do not have to be used. The heat dissipation buffer materials 3a and 3b do not need to be used as long as the semiconductor elements 2a and 2b are in direct contact with the housing 6a. Furthermore, the heat dissipation buffer materials 3a, 3b, and 3c may be applied to the entire area or only to specific parts.

[0018] The heat dissipation buffer materials 3a, 3b, and 3c may be, for example, grease, a heat dissipation sheet, or a thermally conductive double-sided tape, but there is no limitation on the type as long as the thickness can be adjusted.

[0019] The housings 6a and 6b may be made of insulating plastic or resin, for example, but are not limited to any material as long as they are insulating and have high heat dissipation properties.Furthermore, the housings 6a and 6b may be made of any enclosure that covers the semiconductor elements 2a, 2b, and 2c, as long as they are insulating and have high heat dissipation properties.

[0020] The housing 6a on the first main surface side has an opening above the semiconductor element 2c that generates a high amount of heat. The heat dissipation fins 4a are exposed through this opening in the housing 6a. The heat dissipation fins 4a have protrusions that pass through the opening in the housing 6a. The height of these protrusions is adjusted according to the height of the semiconductor element 2c. That is, the height is adjusted so that the semiconductor element 2c that generates a high amount of heat indirectly contacts the protrusions of the heat dissipation fins 4a via the heat dissipation buffer material 3c. This allows the semiconductor element 2c that generates a high amount of heat to dissipate heat to the heat dissipation fins 4a. Note that, like the heat dissipation buffer materials 3a and 3b, the heat dissipation buffer material 3c is not necessarily used. If the heat dissipation buffer material 3c is not used, it is sufficient that the semiconductor element 2c and the heat dissipation fins 4a are in direct contact with each other.

[0021] In this embodiment, a configuration has been described in which semiconductor elements 2a, 2b, and 2c of different heights are brought into contact with the heat dissipation fins 4a or the housing 6a. This configuration allows a heat dissipation path to the heat dissipation fins 4a or a heat dissipation path to the housing 6a to be set for each of the heat-generating semiconductor elements 2a, 2b, and 2c. Furthermore, by using these heat dissipation paths appropriately, a heat dissipation design suitable for the heat generation of the semiconductor elements 2a, 2b, and 2c or the usage conditions of the semiconductor device 1 can be realized.

[0022] In addition, in this embodiment, the thickness of the heat dissipation buffer materials 3a and 3b is adjusted to bring the semiconductor elements 2a and 2b into contact with the housing 6a. Adjusting the height by changing the thickness of the heat dissipation buffer materials 3a and 3b is easier than processing the heat dissipation fins 4a themselves, which are made of metal or the like. Therefore, in this embodiment, by setting the heat dissipation path of the semiconductor elements 2a and 2b in the housing 6a, there is also the advantage that the processing of the heat dissipation fins 4a for height adjustment can be reduced accordingly.

[0023] In this embodiment, the semiconductor element 2c in contact with the heat dissipation fins 4a is a semiconductor element that generates a large amount of heat. However, the semiconductor element 2c in contact with the heat dissipation fins 4a may be a semiconductor element that generates a small amount of heat, as long as the design is suited to the conditions of use of the semiconductor device 1. This point is common to all of the following embodiments.

[0024] On the other hand, for semiconductor elements that generate a lot of heat, it is more suitable to dissipate the heat from the heat dissipation fins 4a rather than the housing 6a, because the heat dissipation fins 4a made of metal or the like have better cooling properties than the housing 6a made of plastic or the like.

[0025] The semiconductor elements 2a, 2b, and 2c are not limited to those made of silicon, but may also be made of wide-bandgap semiconductors with a wider bandgap than silicon. Examples of wide-bandgap semiconductors include silicon carbide, gallium nitride, and diamond. Semiconductor elements made of such wide-bandgap semiconductors have high voltage resistance and allowable current density, allowing for miniaturization. By using these miniaturized semiconductor elements, the semiconductor device 1 incorporating these semiconductor elements can also be miniaturized and highly integrated. Furthermore, the high heat resistance of the semiconductor elements allows for miniaturization of the heat sink's heat dissipation fins 4a, enabling air cooling instead of water cooling, thereby further miniaturizing the semiconductor device 1. Furthermore, the semiconductor elements have low power loss and high efficiency, allowing for high efficiency in the semiconductor device 1. While it is desirable for all of the semiconductor elements 2a, 2b, and 2c to be made of wide-bandgap semiconductors, any one of them may be made of a wide-bandgap semiconductor, and the effects described in this embodiment can be achieved. This point is common to all of the following embodiments.

[0026] [Explanation of correspondence with terms used in claims] In this embodiment, the heat dissipation material arranged on the first main surface of the substrate 5a and suitable for dissipating heat from a semiconductor element with low heat generation is referred to as a first resin heat dissipation material. Similarly, the heat dissipation material arranged on the second main surface of the substrate 5a and suitable for dissipating heat from a semiconductor element with low heat generation is referred to as a second resin heat dissipation material. That is, in this embodiment, the housing 6a is the first resin heat dissipation material, and the housing 6b is the second resin heat dissipation material. Unless otherwise specified, these points are common to the following embodiments.

[0027] Embodiment 2 FIG. 2 is a cross-sectional view of a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device 1 of this embodiment has a structure including multiple openings in the housing 6a and multiple protrusions in the heat dissipation fins 4a, as shown in the first embodiment. Specifically, the housing 6a on the first main surface side has openings above the semiconductor elements 2a and 2c. The heat dissipation fin 4a has protrusions protruding toward the first main surface at each opening above the semiconductor elements 2a and 2c. By providing multiple protrusions on the heat dissipation fin 4a in this manner, the multiple semiconductor elements 2a and 2c can each come into contact with the heat dissipation fin 4a. This allows the multiple semiconductor elements 2a and 2c to dissipate heat to the heat dissipation fin 4a. This embodiment is effective, for example, when the semiconductor elements 2a and 2c are highly heat-generating semiconductor elements and it is desired to dissipate their heat to the heat dissipation fin 4a.

[0028] Embodiment 3 FIG. 3 is a cross-sectional view of a semiconductor device according to a third embodiment of the present disclosure. The heat dissipation fins 4a of the semiconductor device 1 are flat heat dissipation fins without any protrusions. Auxiliary heat dissipation fins 4b are embedded in the opening of the housing 6a, and the auxiliary heat dissipation fins 4b are in contact with the heat dissipation fins 4a. The auxiliary heat dissipation fins 4b pass through the opening of the housing 6a and come into contact with the semiconductor element 2c via the heat dissipation buffer material 3c. By not integrally forming the protrusions, and by making the main body of the flat heat dissipation fins 4a and creating the auxiliary heat dissipation fins 4b as separate components, processing is simplified. Furthermore, the heat dissipation fins 4a can be shared between other semiconductor devices.

[0029] The method of fixing the sub-radiating fins 4b to the housing 6a can be, for example, by adhesive, but there is no limitation on the method as long as they are fixed and thermally bonded. Furthermore, there is no limitation on the size or shape of the sub-radiating fins 4b as long as they can contact the semiconductor element 2c and the radiation fins 4a.

[0030] Embodiment 4 FIG. 4 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present disclosure. The semiconductor device 1 of this embodiment has a structure including a plurality of the sub-heat dissipation fins shown in the third embodiment. By including a plurality of sub-heat dissipation fins 4b, 4c, it is possible to dissipate heat from a plurality of semiconductor elements 2a, 2c to the heat dissipation fin 4a via the sub-heat dissipation fins 4c, 4b, respectively. This is effective, for example, when the semiconductor elements 2a, 2c are highly heat-generating semiconductor elements and it is desired to dissipate their heat to the heat dissipation fin 4a. Furthermore, if the sub-heat dissipation fins 4b and 4c are the same size, it is possible to standardize components.

[0031] Fifth embodiment FIG. 5 is a cross-sectional view of a semiconductor device according to a fifth embodiment of the present disclosure. In this embodiment, similar to the third embodiment, flat heat dissipation fins 4a without any protrusions are used. Also, similar to the third embodiment, secondary heat dissipation fins 4d are embedded in the opening of the housing 6a. Unlike the third embodiment, however, the secondary heat dissipation fins 4d are embedded in the housing 6a and the heat dissipation fins 4a via a heat dissipation buffer material 3d. By using the heat dissipation buffer material 3d in this manner, even if there is a gap between the secondary heat dissipation fins 4d and the housing 6a, the gap can be filled by adjusting the amount and thickness of the heat dissipation buffer material 3d. This means that there is no need to carefully process these components so that the secondary heat dissipation fins 4d fit into the opening of the housing 6a.

[0032] Sixth embodiment FIG. 6 is a cross-sectional view of a semiconductor device according to a sixth embodiment of the present disclosure. The housing 6a of the semiconductor device 1 has multiple protrusions. The heights of these protrusions are adjusted according to the heights of the semiconductor elements 2a and 2b. That is, the semiconductor elements 2a and 2b are adjusted so that they indirectly contact the protrusions of the housing 6a via the heat dissipation buffer materials 3a and 3b. By forming the protrusions on the housing 6a in this manner, the heat dissipation buffer materials 3a and 3b can be made as thin as possible. Excessive thickness of the heat dissipation buffer materials 3a and 3b can lead to a deterioration in heat dissipation performance, and this is expected to prevent this phenomenon. Furthermore, it is possible to insert heat dissipation buffer materials 3a and 3b of the same thickness for the semiconductor elements 2a and 2b. If the heat dissipation buffer materials 3a and 3b have different thicknesses, the heat dissipation performance may differ depending on the thickness, which may make the heat dissipation design more complicated. Inserting heat dissipation buffer materials 3a and 3b of the same thickness can prevent this phenomenon.

[0033] Embodiment 7 FIG. 7 is a cross-sectional view of a semiconductor device according to a seventh embodiment of the present disclosure. The semiconductor device 1 has a structure in which an insulating resin 8 is filled between the first main surface of the substrate 5a and the heat dissipation fins 4a. The semiconductor elements 2a and 2b contact the heat dissipation fins 4a via the resin 8. By filling the space between the substrate 5a and the heat dissipation fins 4a with the resin 8 in this manner, the semiconductor elements 2a and 2b can dissipate heat to the heat dissipation fins 4a via the resin 8. At the same time, an insulating distance can be ensured between the semiconductor elements or between the semiconductor elements and peripheral components. It is preferable that the semiconductor elements 2a and 2b that come into contact with the resin 8 be semiconductor elements that generate little heat. On the other hand, it is preferable that a semiconductor element that generates a particularly high amount of heat be in contact with the convex portions of the heat dissipation fins 4a to efficiently dissipate heat. In other words, the state of the semiconductor element 2c is preferable.

[0034] As a modification of this embodiment, the heat dissipation fins 4a may not be formed with protrusions, and all of the semiconductor elements 2a, 2b, and 2c may dissipate heat to the heat dissipation fins 4a via the resin 8. This modification is effective, for example, when there is no need to efficiently cool the semiconductor element 2c. Furthermore, the resin 8 may be filled between the second main surface side of the substrate 5a and the housing 6b.

[0035] [Explanation of correspondence with terms used in claims] In this embodiment, the resin 8 is a first resin heat dissipation material, and the housing 6b is a second resin heat dissipation material.

[0036] Embodiment 8 FIG. 8 is a cross-sectional view of a semiconductor device according to an eighth embodiment of the present disclosure. In the semiconductor device 1, a second substrate 5b is mounted on the first main surface side of a substrate 5a. The substrate 5a and the second substrate 5b are electrically connected by connection pins 9. However, the type or material of the connection pins 9 is not limited as long as they can electrically connect the substrate 5a and the second substrate 5b. A semiconductor element 2c is mounted on the first main surface of the second substrate 5b. The semiconductor element 2c contacts the heat dissipation fins 4a via a heat dissipation buffer material 3c. By adjusting the height of the second substrate 5b using the connection pins 9 in this way, it is not necessary to form protrusions on the heat dissipation fins 4a.

[0037] [Explanation of correspondence with terms used in claims] The semiconductor element 2c mounted on the second substrate 5b described in this embodiment is called a second-mounted semiconductor element.

[0038] Embodiment 9 FIG. 9 is a cross-sectional view of a semiconductor device according to a ninth embodiment of the present disclosure. In the semiconductor device 1, a semiconductor element 2c is mounted on the second main surface of a substrate 5a. An opening is provided in the substrate 5a so that the back surface of the semiconductor element 2c is exposed. By providing the opening in the substrate 5a, the back surface of the semiconductor element 2c can come into contact with the protruding portions of the heat dissipation fins 4a via the heat dissipation buffer material 3c. In other words, even if the semiconductor element 2c is not mounted on the first main surface, it is possible to cool the semiconductor element 2c with the heat dissipation fins 4a on the first main surface side.

[0039] In this embodiment, the semiconductor element 2c mounted on the second main surface is in direct or indirect contact with the heat dissipation fins 4a. However, if it is not necessary to cool the semiconductor element 2c with the heat dissipation fins 4a, there is no need to provide an opening in the substrate 5a. In other words, the semiconductor element 2c can be in direct or indirect contact with the housing 6b.

[0040] [Explanation of correspondence with terms used in claims] The semiconductor element 2c described in this embodiment, which is mounted on the second main surface of the substrate 5a and has an opening in the substrate 5a, is called a backside mounted semiconductor element.

[0041] Embodiment 10 FIG. 10 is a cross-sectional view of a semiconductor device according to a tenth embodiment of the present disclosure. In this embodiment, similar to the ninth embodiment, the semiconductor device 1 has a semiconductor element 2c mounted on the second main surface. Also, similar to the ninth embodiment, the back surface of the semiconductor element 2c is in contact with the convex portions of the heat dissipation fins 4a. In addition, in this embodiment, the housing 6b on the second main surface side also has convex portions that contact the front surface of the semiconductor element 2c. In other words, the semiconductor element 2c is sandwiched between the heat dissipation fins 4a and the housing 6b, and heat is dissipated to both sides. This further enhances the heat dissipation effect.

[0042] As a modification of this embodiment, openings may be provided in the substrate 5a for the semiconductor elements 2a and 2b mounted on the first main surface, exposing the back surfaces of the elements and bringing them into contact with the convex portions of the housing 6b.

[0043] Embodiment 11 FIG. 11 is a cross-sectional view of a semiconductor device according to an eleventh embodiment of the present disclosure. The semiconductor device 1 includes a semiconductor element 2d having a heat dissipation surface on its side surface. The semiconductor element having a heat dissipation surface on its side surface is, for example, a discrete-type semiconductor element. The semiconductor element 2d is mounted on a first main surface of a substrate 5a. The semiconductor element 2d and the heat dissipation fins 4a are in contact with each other through the parallel heat dissipation surfaces of the heat dissipation fins 4a. Note that the parallel heat dissipation surfaces of the heat dissipation fins 4a refer to the surfaces of the heat dissipation fins 4a that are parallel to the side surfaces of the semiconductor element 2d when the semiconductor element 2d is mounted on the first main surface of the substrate 5a. By contacting the semiconductor element 2d having a heat dissipation surface on its side surface with the parallel heat dissipation surfaces of the heat dissipation fins 4a in this manner, it becomes easier to align the heights of other semiconductor elements. Note that depending on the heat generation characteristics of the semiconductor element 2d, it is not necessary for the entire side surface to be in contact with the heat dissipation fins 4a; only a portion of the side surface may be in contact.

[0044] As a modification of this embodiment, if the heat generated by the semiconductor element 2d is low, the semiconductor element 2d may be brought into contact with the parallel heat dissipation surface of the housing 6a so that the heat can be dissipated to the housing 6a.

[0045] [Explanation of correspondence with terms used in claims] The semiconductor element 2d having a heat dissipation surface on the side surface, as described in this embodiment, is called a side heat dissipation semiconductor element.

[0046] Embodiment 12 FIG. 12 is a cross-sectional view of a semiconductor device according to a twelfth embodiment of the present disclosure. The semiconductor device 1 further includes a third substrate 5c. The substrate 5a and the third substrate 5c may be electrically connected via connection pins or connector wiring. A semiconductor element 2c is mounted on a first main surface of the third substrate 5c. Note that the first main surface of the third substrate 5c refers to the surface of the third substrate 5c facing the heat dissipation fin 4a. The semiconductor device 1 also includes housings 6c and 6d. The housings 6c and 6d are attached to the first main surface of the third substrate 5c and the opposite side thereof to surround the third substrate 5c and the semiconductor element 2c. The semiconductor element 2c contacts all surfaces of the heat dissipation fin 4a except for the surface that contacts the housing 6a via these components. In this way, by further adding the third substrate 5c, the semiconductor element 2c, and the housings 6c and 6d, etc., a mounting member can be created, allowing the semiconductor element 2c mounted on the mounting member to contact the desired surface on the heat dissipation fin 4a.

[0047] As a modification of this embodiment, openings may be provided in the housing 6c and convex portions may be formed on the heat dissipation fins 4a, so that the heat dissipation fins 4a and the semiconductor element 2c may be in direct or indirect contact with each other.

[0048] [Explanation of correspondence with terms used in claims] The heat dissipation material described in this embodiment, which is disposed on the first main surface side of the third substrate 5c and is suitable for dissipating heat from semiconductor elements that generate little heat, is referred to as the third resin heat dissipation material. That is, in this embodiment, the housing 6c is the third resin heat dissipation material. However, this embodiment is merely an example, and the third resin heat dissipation material is not limited to the housing.

[0049] Embodiment 13 FIG. 13 is a cross-sectional view of a semiconductor device according to a thirteenth embodiment of the present disclosure. In the semiconductor device 1, the housing 6b and the substrate 5a are fastened together with screws 7f and 7g. The housing 6a and the heat dissipation fins 4a are fixed and bonded together with a heat dissipation buffer 3e. However, if it is difficult to fasten the housing 6a and the heat dissipation fins 4a using only the heat dissipation buffer 3e, they may be fastened together with screws. Fastening the components in advance, as in this embodiment, makes assembly easier than fastening the heat dissipation fins 4a, the substrate 5a, and the housings 6a and 6b simultaneously with screws, as in the first embodiment. The screw fastening positions and the method for fastening the heat dissipation fins 4a, the substrate 5a, and the housings 6a and 6b are not limited. The fastening method can be determined depending on the assembly of the semiconductor device 1, the number of semiconductor elements, etc.

[0050] The manufacturing method for manufacturing the semiconductor device 1 of this embodiment is as follows. First, a substrate 5a is created, on which multiple semiconductor elements 2a, 2b, and 2c are attached. Next, housings 6a and 6b and heat dissipation fins 4a are created. Next, a first assembly is created, in which the housing 6a and heat dissipation fins 4a are fixed with heat dissipation buffer material 3e. Furthermore, a second assembly is created, in which the substrate 5a and housing 6b are fixed with screws 7f and 7g. Finally, the first assembly and the second assembly are fixed together, and the semiconductor device 1 is completed. By following this process sequence, the semiconductor device 1 can be easily manufactured.

[0051] [Explanation of correspondence with terms used in claims] The process of creating the first assembled member described in this embodiment is called a first assembled member creating process. Similarly, the process of creating the second assembled member is called a second assembled member creating process.

[0052] Embodiment 14 FIG. 14 is a cross-sectional view of a semiconductor device according to a fourteenth embodiment of the present disclosure. The semiconductor device 1 is characterized by a structure that combines multiple configurations described in the first to thirteenth embodiments. For example, FIG. 14 illustrates a structure that combines the first, ninth, and tenth embodiments. The heat dissipation fins 4a and the housing 6b have protrusions and sandwich the semiconductor element 2a. A second substrate 5b is provided on the first main surface of the substrate 5a, and its height is adjusted by connection pins 9. The substrate 5a and the second substrate 5b are electrically connected. The semiconductor element 2c is mounted on the second substrate 5b. The semiconductor element 2c contacts the heat dissipation fins 4a via the heat dissipation buffer material 3c. Thus, two or more embodiments may be freely combined. The semiconductor elements 2a, 2b, and 2c dissipate heat to the housings 6a and 6b, the heat dissipation fins 4a, or the resin 8 via the heat dissipation buffer materials 3a, 3b, and 3c. Alternatively, the semiconductor elements 2a, 2b, and 2c may each have multiple heat dissipation paths. In this way, by combining and using the first to thirteenth embodiments, it becomes possible to achieve optimal heat dissipation and structural design suited to the environment in which the semiconductor device 1 is used. [Explanation of symbols]

[0053] 1. Semiconductor device 2a, 2b, 2c, 2d Semiconductor elements 3a, 3b, 3c, 3d, 3e heat dissipation buffer 4a Heat dissipation fin 4b, 4c, 4d Sub-heat dissipation fins 5a substrate 5b Second board 5c third board 6a, 6b, 6c, 6d Housing 7a, 7b, 7c, 7d, 7e, 7f, 7g screws 8. Resin 9 connecting pins

Claims

1. A plurality of semiconductor elements having different heights; a substrate on which the plurality of semiconductor elements are mounted; a first resin heat dissipation material having one surface facing the surface of the semiconductor element; a heat dissipation fin thermally coupled to the first resin heat dissipation material on a surface opposite to a surface of the first resin heat dissipation material facing the semiconductor element; Equipped with The plurality of semiconductor elements include: at least one semiconductor element that generates less heat and at least one semiconductor element that generates more heat than the semiconductor element that generates less heat, The first resin heat dissipation material is The semiconductor element is configured to be in direct or indirect contact with a heat dissipation surface of the semiconductor element that generates little heat, an opening for exposing the heat dissipation fins above the heat dissipation surface of the semiconductor element that generates a relatively high amount of heat; The heat dissipation fins are through the opening of the first resin heat dissipation material, A semiconductor device that is configured to be in direct or indirect contact with the heat dissipation surface of a semiconductor element that generates relatively high amounts of heat.

2. a second resin heat dissipation material is further provided on a surface of the substrate opposite to the heat dissipation fins; the substrate has an opening for exposing a back surface of the semiconductor element mounted on a surface of the substrate facing the heat dissipation fin, The second resin heat dissipation material is 2. The semiconductor device according to claim 1, wherein the opening is formed in the substrate and the contact hole is formed in direct or indirect contact with the rear surface of the semiconductor element.

3. a second resin heat dissipation material is further provided on a surface of the substrate opposite to the heat dissipation fins; 2. The semiconductor device according to claim 1, wherein the second resin heat dissipation material is configured to be in direct or indirect contact with the surface of the semiconductor element mounted on the side of the substrate opposite the heat dissipation fin.

4. the semiconductor element includes a backside mounted semiconductor element mounted on a surface of the substrate opposite to the heat dissipation fin, the substrate has an opening that exposes the back surface of the back-mounted semiconductor element, 2. The semiconductor device according to claim 1, wherein the heat dissipation fins are configured to pass through the openings in the first resin heat dissipation material and the openings in the substrate and to come into direct or indirect contact with the back surface of the back-mounted semiconductor element.

5. 2. The semiconductor device according to claim 1, wherein the first resin heat dissipation material has a heat dissipation buffer material between it and the semiconductor element with which it is in indirect contact.

6. 2. The semiconductor device according to claim 1, wherein the first resin heat dissipation material has a protrusion corresponding to the height of the semiconductor element with which it is in direct or indirect contact.

7. 4. The semiconductor device according to claim 2, wherein at least one of the first resin heat dissipation material and the second resin heat dissipation material has a heat dissipation buffer material between it and the semiconductor element with which it is in indirect contact.

8. 4. The semiconductor device according to claim 2, wherein at least one of the first resin heat dissipation material and the second resin heat dissipation material has a protrusion corresponding to the height of the semiconductor element with which it is in direct or indirect contact.

9. 5. The semiconductor device according to claim 1, wherein the heat dissipation fins have protrusions corresponding to the height of the semiconductor element with which they come into direct or indirect contact.

10. The heat dissipation fins are The main body and a separate member that is thermally coupled to the main body and passes through the opening of the first resin heat dissipation material; 5. The semiconductor device according to claim 1, further comprising:

11. connection pins erected on a surface of the substrate on the side of the heat dissipation fins; a second substrate mounted on the heat dissipation fin side of the substrate by the connection pins; Equipped with the semiconductor element includes a second mounted semiconductor element mounted on the second substrate, 2. The semiconductor device according to claim 1, wherein the height of the connection pin is adjusted so that the second mounted semiconductor element and the heat dissipation fin are in direct or indirect contact with each other.

12. the semiconductor element includes a side heat dissipation semiconductor element having a heat dissipation surface on a side surface, the heat dissipation fin has a parallel heat dissipation surface that is parallel to a side surface of the side heat dissipation semiconductor element when the side heat dissipation semiconductor element is mounted on the substrate, 2. The semiconductor device according to claim 1, wherein the side heat dissipation semiconductor element is in direct or indirect contact with the parallel heat dissipation surfaces of the heat dissipation fins.

13. a third substrate; and a semiconductor element mounted on the third substrate; a third resin heat dissipation material facing the surface of the semiconductor element; a mounting member having 2. The semiconductor device according to claim 1, wherein the mounting member is in direct or indirect contact with the heat dissipation fin on all surfaces of the heat dissipation fin except for the surface to which the first resin heat dissipation material is thermally bonded.

14. 2. The semiconductor device according to claim 1, wherein the first resin heat dissipation material is a housing.

15. 2. The semiconductor device according to claim 1, wherein the first resin heat dissipation material is a filled resin.

16. 2. The semiconductor device according to claim 1, wherein the semiconductor element is formed of a wide bandgap semiconductor.

17. A process for preparing a substrate on which a plurality of semiconductor elements are mounted, the semiconductor elements including at least one semiconductor element having a low heat generation property and at least one semiconductor element having a relatively high heat generation property compared to the semiconductor element having a low heat generation property; preparing a first resin heat dissipation material disposed opposite a surface of the semiconductor element attached to the substrate; a step of creating a heat dissipation fin; forming a second resin heat dissipation material disposed on a surface of the substrate opposite to the first resin heat dissipation material; a first assembly member fabrication step of fixing the heat dissipation fins to a surface of the first resin heat dissipation material opposite to a surface facing the semiconductor element so as to be thermally coupled to the first resin heat dissipation material, thereby fabricating a first assembly member; a second assembly member fabrication step of fixing the substrate and the second resin heat dissipation material to fabricate a second assembly member; a step of fixing the first assembly member and the second assembly member together; Including, In a state in which the first assembly member and the second assembly member are fixed together, the first resin heat dissipation material an opening for exposing the heat dissipation fins above the heat dissipation surface of the semiconductor element that generates a relatively high amount of heat; The heat dissipation fins are through the opening of the first resin heat dissipation material, A method for manufacturing a semiconductor device in which a heat sink comes into direct or indirect contact with the heat dissipation surface of a semiconductor element that generates relatively high amounts of heat.

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