Deposition System

Abstract

The present invention relates to a deposition system including an induction crucible apparatus configured to generate a material vapor. During use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones within the crucible. The deposition system further includes a substrate support configured to support a substrate, and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support, such that at least partial transfer of the material vapor through the plasma generates a deposition material for deposition on the substrate.

Description

[Technical Field]

[0001] The present invention relates to a method and apparatus for producing a deposition material for deposition on a substrate. [Background technology]

[0002] Deposition is a process by which material is deposited onto a substrate. An example of deposition is thin film deposition, in which a thin layer (usually on the order of nanometers or fractions of a nanometer to several micrometers or tens of micrometers) is deposited on a substrate such as a silicon wafer or web. An example of a thin film deposition technique is physical vapor deposition (PVD), in which a material is evaporated to produce a material vapor, which is deposited on the substrate. An example of PVD is evaporation deposition, in which a material is heated in a vacuum to evaporate as a material vapor. The evaporation of a material vapor may not produce a constant material vapor. For example, there may be localized regions of higher or lower density material vapor. Therefore, it may be desirable to produce a constant material vapor in an efficient manner for deposition on a substrate.

[0003] Another example of PVD is sputter deposition, in which material particles are ejected or sputtered from the surface of a material as a result of bombardment by energetic particles such as ions. In this example of sputter deposition, a sputter gas, such as an inert gas (e.g., argon), is introduced into a vacuum chamber at low pressure, and the sputter gas is ionized using energetic electrons to generate a plasma. Bombardment of the material by the ions from the plasma releases a vapor of the material, which can then be deposited on the substrate. The deposition rate of the material vapor on the substrate can be lower than other deposition processes, such as evaporative deposition. Furthermore, sputter deposition may not be suitable for depositing large areas of material with uniform thickness on a substrate due to the finite size of the material surface that the ions bombard. Therefore, it may be desirable to generate a consistent vapor of material for deposition on large substrate areas in an efficient manner. Summary of the Invention

[0004] According to a first aspect of the present invention, a deposition system is provided that includes an induction crucible apparatus configured to generate a material vapor. During use, the induction crucible apparatus is configured to inductively heat the crucible to generate two or more thermal zones within the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support, such that at least partial transmission of the material vapor through the plasma generates a deposition material for deposition on the substrate. By combining the induction crucible apparatus with the plasma source, a high generation rate of the material vapor can be combined with the ability to modify the material vapor to have a uniform or homogeneous density. As a result, a high rate of deposition material with a uniform density can be generated for deposition on the substrate. The high generation rate of the material vapor can be achieved using relatively low energy in the deposition system compared to electron beam evaporation or resistive heating of the crucible. Therefore, less energy is required to evaporate the material in the crucible to generate the material vapor. Additionally, the use of induction crucible apparatus may allow for a high degree of control over the stoichiometry of the deposited material compared to electron beam evaporation or plasma vapor deposition due to the ability to control the evaporation (or vaporization) rate of the material within the crucible to produce a material vapor.

[0005] An induction crucible apparatus may include a crucible and one or more induction coils disposed around the crucible, such that, when power is applied to the one or more induction coils, a first thermal zone is generated in at least a first portion of the crucible and a second thermal zone is generated in at least a second portion of the crucible. The first temperature of the first thermal zone may be different from the second temperature of the second thermal zone. Creating the first and second thermal zones within the crucible at different temperatures may provide the ability to independently control the thermal zones within the crucible. Independent control of the thermal zones may allow one zone, such as the second thermal zone, to be configured at a higher temperature. In some instances, an induction crucible apparatus may provide a simple and efficient device for maintaining material within the crucible at temperatures above 2000°C without the need for an additional heating system, such as an electron gun system. Such a configuration may provide an efficient method of generating a high-pressure vapor flux of material within the crucible.

[0006] The one or more induction coils may include a first induction coil disposed around a first portion of the crucible and a second induction coil disposed around a second portion of the crucible. A first power may be applied to the first induction coil, and a second power, different from the first power, may be applied to the second induction coil. Applying different powers to the first and second induction coils allows the first and second thermal zones within the crucible to have different thermal temperatures. Independently controlling the power applied to the induction coils, and therefore the temperatures of the thermal zones, may provide better control over the heating of the material within the crucible.

[0007] The first portion of the crucible may be disposed between the base of the crucible and the second portion of the crucible. Upon application of power to one or more induction coils, a first temperature in the first thermal zone may meet or exceed a first temperature threshold for melting the material heated by the induction crucible apparatus. Additionally or alternatively, upon application of power to one or more induction coils, a second temperature in the second thermal zone may meet or exceed a second temperature threshold for vaporizing the material heated by the induction crucible apparatus to produce material vapor. By configuring the lower temperature in the first thermal zone to be lower than the higher temperature in the second thermal zone, splashing and splattering of the material contained within the crucible may be minimized. This is due to the fact that the material in the first thermal zone heats at a slower rate than the material in the second thermal zone.

[0008] The plasma source may be configured to generate a plasma between the induction crucible apparatus and the substrate support such that the plasma is substantially absent from the crucible. By generating the plasma such that the plasma is substantially absent from the induction crucible apparatus, damage to the crucible by the plasma may be reduced.

[0009] The deposition system may include a gas supply system configured to provide at least one gas between the induction crucible apparatus and the substrate support. The reaction between the material vapor and the gas may provide the ability to perform a reactive deposition process. The gas may include one or more chemical elements and / or molecules that can chemically react with the material vapor to produce one or more deposition materials. Furthermore, the material vapor may be or may include a precursor material, such that reaction with the gas produces the deposition material. The ability to perform a reactive deposition process provides the possibility of producing a wide variety of deposition materials for deposition on a substrate.

[0010] The gas supply system may include at least one of a first gas inlet for providing a first gas through the plasma, a second gas inlet for providing a second gas between the plasma and the induction crucible apparatus, or a third gas inlet for providing a third gas between the plasma and the substrate support. Transfer of material vapor through the first gas, second gas, and / or third gas may result in interaction between the material vapor and the gas. Such interaction may, at least in part, produce the deposition material. As described above, interaction with the gas may form part of a reactive deposition process.

[0011] The gas supply system can be configured to control the rate at which at least one gas is supplied between the induction crucible apparatus and the substrate support. Controlling the rate at which the at least one gas is provided can provide the ability to control the properties of the deposited material produced. As a result, the material deposited on the substrate can have properties or characteristics determined by the rate at which the gas is provided to the deposition system.

[0012] The deposition system may be configured to transfer a material vapor at least partially through a plasma and / or at least partially through a gas. The material of the material vapor may interact with at least one gas and / or plasma to generate a deposition material. The material vapor may interact with the plasma to modify properties of the material vapor to generate the deposition material. The properties of the material vapor may be considered to be physical or material properties (such as thermal energy or density of the material vapor) and / or chemical properties (such as chemical composition).

[0013] The deposition system is configured for use in the manufacture of energy storage devices, which may involve the deposition of relatively thick layers or films instead of thin films. To deposit thick films, a highly reproducible and controllable deposition system, such as the deposition system of the present invention, is desirable.

[0014] According to a second aspect of the present invention, there is provided a method for depositing a deposition material on a substrate. The method includes inductively heating an induction crucible apparatus to create two or more thermal zones and heating a material contained in the induction crucible apparatus to generate a material vapor. The method further includes generating a plasma between the induction crucible apparatus and the substrate. The method further includes at least partially transmitting the material vapor through the plasma to generate the deposition material, and depositing the deposition material on the substrate. By combining the induction crucible apparatus with the plasma, a high generation rate of the material vapor can be combined with the ability to modify the material vapor to have a uniform or homogeneous density. As a result, a high rate of deposition material with a uniform density can be generated for deposition on the substrate.

[0015] Inductively heating an induction crucible apparatus may include applying power to one or more induction coils disposed around the crucible of the induction crucible apparatus to generate a first heat zone in a first portion of the crucible and a second heat zone in a second portion of the crucible. A first temperature of the first heat zone may be different from a second temperature of the second heat zone. Applying different powers to the first and second induction coils allows the first and second heat zones within the crucible to have different temperatures. Independently controlling the power applied to the induction coils, and therefore the temperatures of the heat zones, may allow for greater control over the heating of the material within the crucible. Heating the material within the crucible may allow the material to evaporate and generate a material vapor.

[0016] The first portion of the crucible may be disposed between the base of the crucible and the second portion of the crucible. Inductively heating the induction crucible apparatus may further include configuring a first temperature and a second temperature to melt a first portion of the material in the first portion of the crucible and / or vaporize a second portion of the material in the second portion of the crucible to generate a vapor of the material. By melting the first portion of the material and vaporizing the second portion of the material, splashing and splattering of the material may be minimized. This is due to the fact that the first portion of the material heats at a slower rate than the second portion of the material.

[0017] Plasma may be substantially absent from the induction crucible apparatus. By configuring the induction crucible apparatus so that plasma is substantially absent, damage to the crucible from the plasma may be reduced.

[0018] At least one gas may be provided between the induction crucible apparatus and the substrate. Reaction between the material vapor and the gas may provide the ability to perform a reactive deposition process. The gas may include one or more chemical elements and / or molecules that can chemically react with the material vapor to produce one or more deposition materials. Furthermore, the material vapor may be or may include a precursor material, such that reaction with the gas produces the deposition material. The ability to perform a reactive deposition process provides the possibility of producing a wide variety of deposition materials for deposition on a substrate.

[0019] The generation of the deposition material may comprise a material vapor interacting with at least one gas and / or plasma. The material vapor may interact with at least one gas and / or plasma to generate the deposition material. The material vapor may interact with the gas and / or plasma to change the properties of the material vapor to generate the deposition material. The properties of the material vapor may be considered physical or material properties (such as thermal energy or density of the material vapor) and / or chemical properties (such as chemical composition). Due to the plasma transmission, the deposition material may include an energetic cloud of ions, electrons, and neutral atoms / molecules, which may further interact with the gas to generate the deposition material. Thus, the deposition material may comprise a high-energy deposition material, which provides more energy to the deposition material when deposited on a substrate, avoiding the need for an additional step (e.g., an annealing step) in the deposition process.

[0020] One of the at least one gases can be provided at a first rate for a first time to generate a deposition material as a first deposition material at the first time. The first deposition material can be generated by transmitting a material vapor at least partially through the plasma and at least partially through the gas. Furthermore, one of the at least one gases can be provided at a second rate different from the first rate for a second time different from the first rate. A second deposition material different from the first deposition material can be generated at the second time by transmitting a material vapor at least partially through the plasma and at least partially through the gas. The first deposition material can have a different chemical composition than the second deposition material. Controlling the rate at which the at least one gas is provided can provide the ability to control the properties of the generated deposition material, such as chemical composition. The material deposited on the substrate can have properties or characteristics determined by the rate at which the gas is provided to the deposition system.

[0021] The at least one gas may include nitrogen, argon, oxygen, ammonia, nitrogen oxides, and / or helium. Such gases may provide the ability to perform a reactive deposition process using material vapors acting as precursor materials to produce the deposition material.

[0022] The rate at which one of the at least one gases is provided can be controlled to control the crystallinity of the deposition material deposited on the substrate. Controlling the rate at which the gas is provided (e.g., the concentration of the gas) can be used to control the reaction rate between the gas and the material vapor to control the crystalline structure (e.g., the crystallinity) of the deposition material produced from the reaction.

[0023] To control the material properties of the deposited material, the production rate of the material vapor and / or the density of the plasma can be controlled. Controlling the production rate of the material vapor can provide the ability to control the thickness and / or density of the deposited material deposited on the substrate. Controlling the density of the plasma can provide the ability to control the uniformity or homogeneity of the deposited material deposited on the substrate.

[0024] Depositing the deposition material onto the substrate can include depositing the deposition material substantially homogeneously on the substrate. Depositing the substantially homogeneous deposition material produces a flat or uniform deposition material on the substrate.

[0025] The deposition material deposited on the substrate may comprise a material for an electrode layer or an electrolyte layer of an energy storage device. The fabrication of an energy storage device may involve the deposition of a relatively thick layer or film instead of a thin film. To deposit a thick film, a deposition process with a high degree of reproducibility and control, such as the deposition process of the present invention, is desirable.

[0027] Further features will become apparent from the following description, given by way of example only, made with reference to the accompanying drawings, in which: [Brief explanation of the drawings]

[0028] [Figure 1]FIG. 1 is a schematic diagram of a deposition system according to an embodiment. [Figure 2] 1 is a schematic diagram of an induction crucible apparatus according to an embodiment. [Figure 3] FIG. 10 is a schematic diagram of an induction crucible apparatus according to a further embodiment. [Figure 4] FIG. 10 is a schematic diagram of an induction crucible apparatus according to a further embodiment. [Figure 5a] 1 is a schematic diagram of a substrate support according to an embodiment; [Figure 5b] 4 is a schematic illustration of a substrate support according to a further embodiment; [Figure 6] 1 is a schematic diagram of a plasma source according to an embodiment; [Figure 7] FIG. 10 is a schematic diagram of a plasma source according to a further embodiment. [Figure 8] FIG. 1 is a schematic diagram of a deposition system according to a further embodiment. [Figure 9] FIG. 1 is a flow diagram illustrating a method for depositing a deposition material on a substrate. DETAILED DESCRIPTION OF THE INVENTION

[0029] Details of methods and systems according to embodiments will become apparent from the following description, taken in conjunction with the figures. In this description, for purposes of explanation, many specific details of particular examples are set forth. Reference in the specification to an "embodiment" or similar terminology means that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one of the embodiments, but not necessarily in other embodiments. Furthermore, it should be noted that particular embodiments are generally described, omitting and / or necessarily simplifying certain features to facilitate description and understanding of the concepts underlying the embodiments.

[0030] 1 is a schematic diagram of a deposition system 100. In this example, the deposition system 100 includes an induction crucible apparatus 200, a substrate support 500, and a plasma source 600.

[0031] The induction crucible apparatus 200 is configured to generate a material vapor 210. The induction crucible apparatus 200 may inductively heat a crucible 201 to generate two or more heat zones 204, 205 within the crucible 201. The induction crucible apparatus 200 is described below with reference to Figures 2 through 4.

[0032] The substrate support 500 is configured to support a substrate 501. The substrate support 500 is described below with reference to Figures 5a and 5b.

[0033] The plasma source 600 is configured to generate a plasma 620 between the induction crucible apparatus 200 and the substrate support 500. Transfer of the material vapor 210, at least in part through the plasma 620, generates a deposition material 510 for deposition on the substrate 501. The plasma source 600 is described below with reference to Figures 6 and 7.

[0034] Although not shown in the figures for clarity, it should be understood that the deposition system 100 may be located within a deposition chamber. In use, the deposition chamber is maintained at a low pressure suitable for the deposition process, for example, 3x10 -3 For example, the deposition chamber can be evacuated to an appropriate pressure (e.g., 1x10 torr) by a vacuum pumping system. -5 In use, a gas such as argon or nitrogen can be introduced into the deposition chamber using a gas supply system to the extent that a suitable pressure for the deposition process is achieved.

[0035] Material vapor 210 generated by induction source 200 may travel in direction 220 toward substrate 501. The region in which material vapor may exist may be referred to as deposition zone 230. Deposition zone 230 comprises the region between induction crucible apparatus 200 and substrate support 500 through which material vapor 210 may travel. The edge of deposition zone 230 is indicated by the dashed line starting at induction crucible apparatus 200 and ending at substrate support 500.

[0036] Figure 2 is a schematic diagram of an induction crucible apparatus 200. Features in Figure 2 that are similar to corresponding features in Figure 1 are labeled with the same reference numerals, and corresponding descriptions apply unless otherwise indicated.

[0037] In this example, the induction crucible apparatus 200 includes a crucible 201 and one or more induction coils 203 disposed around the crucible 201. The crucible is, for example, a vessel or container for containing a material to be thermally heated. The material in the crucible can be heated to a temperature such that the material melts, e.g., changes to a liquid state. The crucible can be manufactured from a heat-resistant material such as, but not limited to, graphite, porcelain, ceramic, alumina, or metal. The heat-resistant material of the crucible can be selected to withstand the temperatures required to melt the material in the crucible. The material and dimensions (e.g., size and / or shape) of the crucible can be selected based on the requirements of the use of the crucible.

[0038] The crucible 201 may be used to heat the material 202 within the crucible 201 using one or more induction coils 203. Heating the material 202 results in an increase in the temperature of the material due to an increase in thermal energy in the material 202. Heating of the material 202 may occur as a result of the application of power to the one or more induction coils 203.

[0039] The induction coil 203 may comprise a continuous coil of wire, which may have multiple turns of wire. The wire may be made of or comprise a conductive material, such as copper. Thus, such wire is capable of passing an electric current through the induction coil. The multiple turns of wire may be configured as a continuous loop or circle of wire arranged around a central axis. In some examples, the multiple turns of wire are arranged around the central axis of circles with an ever-increasing radius. In other examples, the multiple turns of wire are arranged around the central axis of circles of the same radius, but the centers of the circles are aligned in a straight line. As noted above, a single length of wire may be considered one induction coil.

[0040] Power may be supplied to a single induction coil. For example, two or more separate lengths of wire not electrically connected to each other may be considered two or more single induction coils. Power may be applied to each induction coil independently. For example, a first power may be applied to the first induction coil and a second power may be applied to the second induction coil. The presence of one or more induction coils 203 around the crucible 201 allows the material 202 within the crucible 201 to be heated via induction heating. By passing an alternating current (AC) through the induction coil, eddy currents may be induced within the material surrounded by the induction coil. For example, eddy currents include one or more closed loops of current induced within a conductor due to the presence of an alternating magnetic field. Current may be passed through the induction coil to generate a magnetic field. Alternating current passing through the induction coil results in an alternating magnetic field, which generates eddy currents.

[0041] The eddy currents generate thermal energy that heats the material. In the case of electrically conductive materials, this process heats the material. Such electrically conductive materials may also be known as induction susceptors. In the case of less conductive materials, the crucible inside the coil may be made from or otherwise comprise an induction susceptor, such as graphite, that can accommodate the less conductive material. Thus, the crucible may be inductively heated, and the material contained within the crucible may be conductively heated.

[0042] The induction crucible apparatus 200 may contain a material 202 that is initially in a solid or liquid state within a crucible 201. Heating the material 202 within the crucible 201 via induction heating may cause the material to change to a liquid state, which may be referred to as a molten state. Further heating may cause the molten material 202 to vaporize, e.g., change to a gaseous state, also referred to as material vapor 210, which evaporates from the molten material 202. The material vapor 210 may be deposited onto a substrate to create a layer of deposited material. Additionally or alternatively, the material vapor may be used in a chemical reaction as part of a reactive deposition process to produce a layer of deposited material before being deposited onto a substrate.

[0043] Deposition is the process by which a material is provided on a substrate. The substrate onto which the material can be deposited can be, for example, glass or polymer, rigid or flexible, and usually planar. Energy storage devices, such as solid-state cells, can be fabricated by depositing a stack of layers onto the substrate. The stack of layers usually includes a first electrode layer, a second electrode layer, and an electrolyte layer between the first and second electrode layers.

[0044] The first electrode layer may function as a positive current collector layer. In such an example, the first electrode layer may form a positive electrode layer (which may correspond to the cathode during discharge of a cell of an energy storage device including the stack). The first electrode layer may include a material suitable for storing lithium ions through a stable chemical reaction, such as lithium cobalt oxide, lithium iron phosphate, or an alkali metal polysulfide salt.

[0045] In alternative examples, there may be a separate positive current collector layer, which may be disposed between the first electrode layer and the substrate. In these examples, the separate positive current collector layer may comprise nickel foil, although it should be understood that any suitable metal, such as aluminum, copper, or steel, or metallized material may be used, including metallized plastics, such as aluminum on polyethylene terephthalate (PET).

[0046] The second electrode layer may function as a negative current collector layer. In such cases, the second electrode layer may form the negative electrode layer (which may correspond to the anode during discharge of a cell of an energy storage device including the stack). The second electrode layer may include lithium metal, graphite, silicon, or indium tin oxide (ITO). In other examples, the stack may include a second electrode layer, which may be on the second electrode layer and may include a separate negative current collector layer between the negative current collector layer and the substrate. In examples where the negative current collector layer is a separate layer, the negative current collector layer may include nickel foil. However, it should be understood that any suitable metal, such as aluminum, copper, or steel, or a metallized material, including metallized plastics such as aluminum on polyethylene terephthalate (PET), may be used.

[0047] The first and second electrode layers are typically electrically conductive, so that electrical current can flow through them due to the flow of ions or electrons through them.

[0048] The electrolyte layer can include any suitable material that is ionically conductive but also an electrical insulator, such as lithium phosphate nitrite (LiPON). As described above, the electrolyte layer can be, for example, a solid layer and can be referred to as a fast-ion conductor. A solid electrolyte layer can have a structure intermediate between that of a liquid electrolyte, which lacks an ordered structure and contains ions that can move freely, and that of a crystalline solid. For example, a crystalline material has a regular structure in which atoms are regularly arranged and can be arranged as a two- or three-dimensional lattice. Ions in a crystalline material are typically immobile and may not be able to move freely throughout the material.

[0049] The stack can be fabricated, for example, by depositing a first electrode layer on a substrate. Subsequently, an electrolyte layer is deposited on the first electrode layer, and then a second electrode layer is deposited on the electrolyte layer. At least one layer of the stack can be deposited using a system or method described herein.

[0050] The material 202 provided in the crucible 201 can be selected depending on the layer to be deposited on the substrate. For example, a first material can be initially placed or otherwise provided in the crucible 201. The first material can be, for example, a conductive material such as lithium cobalt oxide that is deposited on the substrate to form a first electrode layer for an energy storage device. Once the first material has been deposited on the substrate to a desired thickness, the first material in the crucible 201 can be replaced with a second material. The second material can be, for example, an ionically conductive but electrically insulating material such as lithium phosphate nitride (LiPON) that is deposited on the first electrode layer to form an electrolyte layer for the energy storage device. Once the second material has been deposited on the substrate to a desired thickness, the second material in the crucible 201 can be replaced with a third material. The third material can also be, for example, a conductive material such as lithium metal that is deposited on the electrolyte layer to form a second electrode layer for the energy storage device. Once the third material has been deposited to a desired thickness on the substrate, further processing can be performed on the stack of deposited layers to produce the energy storage device.

[0051] Typically, the fabrication of energy storage devices such as solid-state cells can involve the deposition of relatively thick layers or films (e.g., on the micrometer scale, sometimes referred to as microns) instead of thin films (e.g., on the nanometer scale). To deposit films of this thickness, highly reproducible and controllable deposition sources are desirable.

[0052] Returning to the induction crucible apparatus 200 of FIG. 2 , in this example, the crucible 201 includes a first portion 201 a and a second portion 201 b. Upon application of power to one or more induction coils 203, a first thermal zone 204 is generated in at least the first portion 201 a of the crucible 201, and a second thermal zone 205 is generated in at least the second portion 201 b of the crucible 201. The first thermal zone 204 may have a first temperature, and the second thermal zone 205 may have a second temperature, such that the first temperature is different from the second temperature. For example, upon application of power to the one or more induction coils 203, the first thermal zone 204 may have a temperature that is different from the temperature of the second thermal zone 205.

[0053] 2, the first thermal zone 204 is shown as separate and distinct from the second thermal zone 205, it should be understood that upon application of power to one or more induction coils 203, the first and second thermal zones 204, 205 within the crucible 201 may not be separate and distinct. The first and second thermal zones 204, 205 may not be limited to the area indicated by the dashed lines in FIG.

[0054] Instead, the first and second thermal zones 204, 205 may be considered portions of the crucible 201 that, on average, have a given temperature. For example, the first thermal zone 204 may have, on average, a first temperature within the first thermal zone 204. Similarly, the second thermal zone 205 may have, on average, a second temperature within the second thermal zone 205. The first and second temperatures may or may not be the same. When the first and second temperatures are the same, the first and second thermal zones 204, 205 may nevertheless have different thermal characteristics due to, for example, different temperature gradients, temperature distributions, or temperature profiles.

[0055] In some examples, a thermal zone may exist within a portion of the crucible. The thermal zone may be considered to exist within the material of the portion of the crucible, such that the thermal zone is limited to where the material of the crucible is present. In other words, the thermal zone may not extend outside the crucible material. For example, the first thermal zone 204 may be considered to be limited to the material of portion 201a of the crucible 201. In other examples, a thermal zone may exist within a portion of the crucible and may also extend outside the crucible material. The thermal zone may be considered to exist within a portion of the material of the crucible and within a portion of the crucible cavity. In other words, the thermal zone may extend outside the crucible material to accommodate the crucible cavity that contains the material 202 to be heated.

[0056] A first thermal zone 204 corresponding to the first portion 201a of the crucible 201 may be disposed between the base 201c of the crucible 201 and the second portion 201b of the crucible 201. The base 201c of the crucible 201 may be referred to as the bottom of the crucible 201. The first thermal zone 204 may be considered to be located at the bottom of the crucible 201. A second thermal zone 205 corresponding to the second portion 201b of the crucible 201 may be disposed between the first portion 201a of the crucible 201 and the top 201d of the crucible 201. The second thermal zone 205 may be considered to be located at the top of the crucible 201.

[0057] In some examples, the first portion 201 a of the crucible 201 and the second portion 201 b of the crucible 201 may comprise a portion of the crucible 201 that is common to both the first portion 201 a and the second portion 201 b. Thus, the first thermal zone 204 and the second thermal zone 205 may contain a portion of the crucible 201 that is common to both the first thermal zone 204 and the second thermal zone 205. In other words, the first thermal zone 204 and the second thermal zone 205 may partially overlap within the crucible 201.

[0058] In some examples, the first and second portions 201 a, 201 b of the crucible 201 may have different physical properties that allow for the creation of first and second thermal zones 204, 205. The boundary between the first portion 201 a of the crucible 201 and the second portion 201 b of the crucible 201 is shown in FIG. 2 by boundary line 201 e. The first portion 201 a of the crucible 201 may have different physical properties than the second portion 201 b of the crucible 201, such that the physical properties of the crucible 201 change when passing through boundary line 201 e of the crucible 201.

[0059] In one example, the first portion 201a of the crucible 201 may have a different electrical resistivity than the second portion 201b of the crucible 201. For example, the second portion 201b may have a higher electrical resistivity than the first portion 201a. When a given power is applied to a single induction coil surrounding or otherwise disposed around both the first and second portions 201a, 201b of the crucible 201, the second portion 201b of the crucible 201 may become hotter than the first portion 201a of the crucible 201 due to the higher electrical resistivity of the second portion 201b. This may create a second thermal zone 205 having a higher temperature than the first thermal zone 204. As mentioned above, a single induction coil may be considered to be one induction coil. The induction coil may comprise a continuous coil of wire, which may have multiple turns of wire.

[0060] In another example, the induction crucible apparatus 201 may include a crucible 201 having the same or similar physical characteristics throughout the crucible 201. In such cases, two or more induction coils 203 may be used to generate a first thermal zone 204 and a second thermal zone 205. A first induction coil may be used to generate the first thermal zone 204, and a second induction coil may be used to generate the second thermal zone 205. When a first power is applied to the first induction coil and a second power is applied to the second induction coil, if the first power is different from the second power, the first thermal zone may have different thermal characteristics than the second thermal zone. For example, applying a higher power to the second induction coil than to the first induction coil may generate a higher temperature in the second thermal zone compared to the first thermal zone.

[0061] Figure 3 is a schematic diagram of creating a first thermal zone 204 and a second thermal zone 205 in an induction crucible apparatus 300. Features in Figure 3 that are similar to corresponding features in Figures 1 and 2 are labeled with the same reference numerals. Corresponding descriptions apply unless otherwise indicated.

[0062] The induction crucible apparatus 300 includes a first induction coil 203a and a second induction coil 203b. The first power supply 301a may be configured to generate a first power, e.g., AC power. The first power may be applied to the first induction coil 203a via one or more electrical connections 302a, 303a. Disposing the first induction coil 203a around a portion of the crucible 201 creates a first thermal zone 204 within the crucible 201. The second power supply 301b may be configured to generate a second power, e.g., AC power. The second power may be applied to the second induction coil 201b via one or more electrical connections 302b, 303b. Disposing the second induction coil 203b around a portion of the crucible 201 creates a second thermal zone 205 within the crucible 201.

[0063] A power source, also known as an electrical power supply, is an electrical device or system that can provide power to, for example, an electrical load, in this case, one or more induction coils. A power source typically converts the electrical current from the source to a given voltage, current, and frequency to power the induction coils.

[0064] A power source, such as the first power source 301a or the second power source 301b, may be controlled by a control system 304. The control system 304 may be arranged to control, for example, the power applied to one or more induction coils 203a, 203b. Such control may be based on input data received by the control system 304, such as measurement data (described further below). The control system may include a processor, which may be referred to as a controller and may be a microcontroller. The processor may be a central processing unit (CPU) for processing data and computer-readable instructions. The control system may also include a memory device for storing the data and computer-readable instructions. The memory device may include at least one of volatile memory, such as random access memory (RAM), and non-volatile memory, such as read-only memory (ROM), and / or other types of storage or memory. The memory device may be an on-chip memory or buffer that can be accessed relatively quickly by the processor. The memory device may be communicatively coupled to the processor, for example, by at least one bus, so that data can be transferred between the memory device and the processor. In this manner, computer-readable instructions for processing by a processor to control the induction crucible apparatus 300 and its various components according to the embodiments described herein may be executed by the processor and stored in a memory device. Alternatively, some or all of the computer-readable instructions may be embedded in hardware or firmware in addition to or instead of software. In some cases, the first and second induction coils 203a, 203b are arranged to receive power from the same power source, such as a main power supply, which may be referred to as a common power source. In such cases, the first and second power sources 301a, 301b may be omitted, and the control system 304 may instead receive power from the common power source and control the first and second powers provided by the first and second induction coils 203a, 203b, which are different from each other.In yet another case, there may be a first control system arranged to control a first power provided by a first power source 301 a and a second control system arranged to control a second power provided by a second power source 301 b such that the first power is different from the second power. In such a case, the first and / or second control systems may be similar to control system 304.

[0065] Power may be applied to one or more induction coils 203 a, 203 b, for example, by applying AC power, e.g., using at least one power supply. Control of the power may be provided, for example, through control of the current, voltage, and / or frequency of the AC power, e.g., using control system 304. In some examples, induction crucible apparatus 300 may operate at a given voltage and current. When induction crucible apparatus 300 is surrounded by a low or medium vacuum, the given voltage and current may be selected to prevent plasma formation in the immediate vicinity of induction crucible apparatus 300 and ablation of material 202 within crucible 201.

[0066] In some examples, the first power 301a applied to the first induction coil 203a may be higher than the second power 301b applied to the second induction coil 203b. Applying higher power results in greater induction heating and a higher temperature. Thus, the first thermal zone 204, which corresponds to the first induction coil 203a, has a higher temperature than the second thermal zone 205, which corresponds to the second induction coil 203b in these examples.

[0067] In another example, the second power 301b applied to the second induction coil 203b can be higher than the first power 301a applied to the first induction coil 203b. Applying higher power results in greater induction heating and, consequently, a higher temperature. Thus, the second thermal zone 205, which corresponds to the second induction coil 203b, has a higher temperature than the first thermal zone 204, which in these examples corresponds to the second induction coil 203a.

[0068] When the first thermal zone 204 is at a lower temperature and the second thermal zone 205 is at a higher temperature, the material 202 contained within the crucible 201 may be melted in the first thermal zone 204 and vaporized in the second thermal zone 205. In some examples, the control system 304 may be configured to control the power applied to the one or more induction coils 203 a, 203 b so that the first temperature meets or exceeds a first temperature threshold for melting the material 202 contained within the crucible 201. In some examples, the control system 304 may be configured to control the power applied to the one or more induction coils 203 a, 203 b so that the second temperature meets or exceeds a second temperature threshold for vaporizing the material 202 contained within the crucible 201.

[0069] 3, the first thermal zone may contain some or most of the material 202 contained within the crucible 201. The second thermal zone 205 may contain some or a minority of the material 202 contained within the crucible 201. In such a context, the majority of the material 202 may be held at a temperature that causes the material 202 to become molten, and the minority of the material may be held at a temperature that causes the material 202 to vaporize.

[0070] By configuring the lower temperature first thermal zone 204 below the higher temperature second thermal zone 205, splashing and splattering of the molten material 202 within the crucible 201 can be minimized as the material heats and vaporizes. This is due to the fact that the material 202 in the first thermal zone 204 heats at a slower rate than the material 202 in the second thermal zone 205.

[0071] As noted above, in some examples, the induction crucible apparatus 300 may be used as an evaporation deposition source. In such a context, the induction crucible apparatus 300 may operate at high temperatures, e.g., above 2000 degrees, to evaporate the material 202 to produce a material vapor. High temperatures above 2000 degrees may be achieved without the use of an electron gun system to heat the material 202 in the crucible 201. Thus, the systems and methods herein may be simpler than existing systems.

[0072] In such examples, the induction crucible apparatus 300 can be installed within a deposition chamber. The deposition chamber can house a substrate onto which a deposition material can be deposited. In some examples, the deposition material can be a material vapor generated from the induction crucible apparatus 300. In other examples, the deposition material can be created using a material vapor generated from the induction crucible apparatus 300.

[0073] Any gases present in the deposition chamber (such as air, nitrogen, argon and / or other inert or noble gases) may be present in the vacuum deposition chamber until the vacuum pressure in the vacuum deposition chamber reaches a given vacuum pressure, e.g., 3x10 -3 The deposition chamber may be evacuated to reach a pressure of 1000 psi (0.25 psi) or less. Evacuation of the deposition chamber to a given pressure may be accomplished using a vacuum pumping system. Such a vacuum pumping system may include a scroll or rotary pump and / or a turbo pump to evacuate gases and / or air from within the deposition chamber.

[0074] When the induction crucible apparatus 300 is used as an evaporation deposition source, controlling the application of power to one or more induction coils can be used to control the thermal characteristics of the first and second thermal zones 204, 205 within the crucible. As a result, the characteristics of the first and second thermal zones 204, 205 can determine the characteristics of the deposition of the deposition material on the substrate. For example, the ability to independently control the characteristics of the first and second thermal zones 204, 205 can control the thickness and / or density of the deposition of the deposition material on the substrate, the deposition rate of the deposition material on the substrate (e.g., vapor flux of the material vapor), the quality of the deposition (e.g., uniformity of the vapor flux of the material vapor), etc. Adjusting the power applied to one or more induction coils can provide the possibility of generating a high-pressure vapor flux of the material vapor for deposition on the substrate.

[0075] In some examples, the presence of two or more thermal zones 204, 205 may generate one or more temperature gradients between the thermal zones. The generation of a temperature gradient may cause movement of the molten material 202 within the crucible 201, for example, generating stirring of the molten material 202 within the crucible 201. The molten material 202 may be contained within a region of the first thermal zone 204 (generated in a first portion of the crucible 201) and a region of the second thermal zone 205 (generated in a second portion of the crucible 201). The regions of the first and second thermal zones 204, 205 may comprise some or all of the first and / or second thermal zones 204, 205. Thus, stirring of the molten material 202 may exist between the region of the first thermal zone 204 and the region of the second thermal zone 205 due to the temperature gradient between the first thermal zone 204 and the second thermal zone 205.

[0076] Agitation of the molten material 202 may provide a more uniform distribution of thermal energy, thus ensuring that there are no or fewer hot or cold spots in the material 202 contained within the crucible 201 as it is heated, for example, and therefore that the thermal energy is relatively homogeneously distributed. Inductive heating of the material 202 may also produce inductive stirring of the molten material 202. Inductive stirring may also provide a more homogeneous distribution of thermal energy, and therefore a more homogeneous molten material 202.

[0077] To measure thermal properties of the crucible 201, one or more temperature sensors may be coupled to the crucible 201. A first temperature sensor 311a may be coupled to a first thermal zone 204 of the crucible 201 via a coupling mechanism 312a. Similarly, a second temperature sensor 311b may be coupled to a second thermal zone 205 of the crucible 201 via a coupling mechanism 312b. The temperature sensors 311a, 311b may enable the temperature to be measured for at least one of the thermal zones 204, 205.

[0078] The coupling mechanism 312a, 312b may physically connect or couple the temperature sensor to the thermal zone 204, 205. In some examples, the temperature sensor 311a, 311b measures the temperature of the crucible itself within a given thermal zone 204, 205, as shown in FIG. 2. For example, the temperature sensor 311a, 311b may be physically connected to the crucible itself, e.g., the outside or inside of the crucible material. In other examples, the temperature sensor measures the temperature of the crucible cavity within a given thermal zone, e.g., the temperature of the material contained within the crucible. For example, the temperature sensor may be physically connected to the crucible cavity or the material contained within the crucible.

[0079] The temperature sensors 311 a, 311 b may be any such device that measures the temperature of an object, such as a thermocouple, a thermistor, or a thermostat. The temperature sensors 311 a, 311 b may each be positioned to obtain measurement data representing a measurement of at least one of a first or second temperature. In some examples, the first temperature is the temperature of a first thermal zone and the second temperature is the temperature of a second thermal zone.

[0080] In some examples, such as a thermostat, measurements of the temperature of the first and / or second thermal zones 204, 205 may be used to control or partially control the power applied to the induction coil. The power applied to the induction coil may be controlled by a control system, such as control system 304. Control system 304 may be arranged to control the power 301 a, 301 b based on received input data, which may comprise measurement data obtained by temperature sensors 311 a, 311 b.

[0081] For example, the power applied to the first and / or second induction coils 203a, 203b can be controlled by a feedback loop based at least in part on temperature measurements by the first temperature sensors 311a, 311b for the first and / or second thermal zones 204, 205. As a result, the temperatures of the first and / or second thermal zones 204, 205 can be automatically maintained without manual intervention. Therefore, a substantially constant vapor flux of the material 202 can be achieved in the second thermal zone 205, or a vapor flux of the material 202 with less vapor flux fluctuation than existing systems. In other words, vaporization of the material 202 occurs at a substantially constant rate, producing a constant material vapor. When the vapor flux is approximately constant, the vapor flux of the material vapor can be considered substantially constant. For example, the vapor flux of the material can be approximately constant within a measurement tolerance, or the vapor flux fluctuation can be within plus or minus 1, 5, or 10 percent of the vapor flux.

[0082] The power applied to the induction coils may be controlled by a control system, such as control system 304 of Figure 3. For example, in response to input data indicating that a first temperature in first thermal zone 204 is below a first temperature threshold for melting a material heated by induction crucible apparatus 300, control system 304 may control first power 301a applied to first induction coil 203a to increase the temperature in first thermal zone 204 until the temperature in first thermal zone 204 meets or exceeds the first temperature threshold. Similarly, in response to input data indicating that a second temperature in second thermal zone 205 is below a second temperature threshold for vaporization of material, control system 304 may control second power 301b applied to second induction coil 203b to increase the temperature in second thermal zone 205 until the temperature in second thermal zone 205 meets or exceeds the second temperature threshold. Conversely, the control system 304 may similarly be arranged to reduce the first and / or second powers 301a, 301b if it is determined that the first and / or second temperatures meet or exceed further first and / or second temperature thresholds (e.g., corresponding to a flux of evaporated material from the crucible 201 that is too high for a desired application).

[0083] In some examples, insulation 320, such as expanded graphite insulation, may be disposed around the crucible 201 and between the crucible 201 and one or more induction coils 203 a, 203 b. The insulation 320 may be, for example, a heat-resistant material that may inhibit or limit the transfer of thermal energy. For example, the insulation 320 may inhibit the transfer of thermal energy from the crucible 201 to the induction coils 203 a, 203 b. By disposing the insulation 320 between the induction coils 203 a, 203 b and the crucible 201, the insulation 320 may protect the induction coils 203 a, 203 b from heat from the crucible 201.

[0084] Figure 4 is a schematic diagram of an induction crucible apparatus 400. Features in Figure 4 that are similar to corresponding features in Figures 1 to 3 are labeled with the same reference numerals, and corresponding descriptions apply unless otherwise indicated.

[0085] The induction crucible apparatus 400, as described above, may include a crucible 201 for containing a material 202 to be heated via induction heating, and one or more induction coils (in this case, first and second induction coils 203a, 203b) disposed around the crucible 201. Thermal insulation 320 may be present between the crucible 201 and the first and second induction coils 203a, 203b to protect the first and second induction coils 203a, 203b from heat generated within the crucible 201 upon application of electrical power.

[0086] In some examples, at least one induction coil may be cooled by a cooling system. A first cooling system may be arranged to cool the first induction coil 203 a. A second cooling system may be arranged to cool the second induction coil 203 b. The first cooling system and the second cooling system may apply different amounts of cooling to the first induction coil 203 a and the second induction coil 203 b, respectively.

[0087] In some examples, at least one of the cooling systems is a water-cooling system. For example, at least one induction coil may be water-cooled by the water-cooling system. For example, the first induction coil 203a may be water-cooled by the first water-cooling system, which in this case includes the first and second elements 401a and 402a (this is merely an example). The first and second elements 401a and 402a may comprise tubes, pipes, or other such hollow containers that allow water to flow. The first and second elements 401a and 402a may be in thermal contact with the first induction coil 203a such that thermal energy may pass from the first induction coil 203a to the first and second elements 401a and 402a and the water therein. In FIG. 4 , the first element 401a extends parallel to the lower end of the first induction coil 203a, and the second element 402a extends parallel to the upper end of the first induction coil 203a, but this is merely an example. Water flowing through the first and second elements 401a and 402a around the first induction coil 203a may heat up due to thermal contact with the first induction coil 203a and transfer at least a portion of the thermal energy outward from the first induction coil. In this manner, water is used as a heat transfer medium. The first and second elements 401a and 402a may be made of copper, metal, or other such thermally conductive material. Transferring the thermal energy outward from the first induction coil 203a cools the first induction coil 203a. Water in the first water cooling system 401a, 402a may pass through the first element 401a and then through the second element 402a to cool the first induction coil 203a.

[0088] Similarly, the second induction coil 203b may be water-cooled by a second water-cooling system, which in this example (by way of example only) includes third and fourth elements 401b and 402b, which may be similar to the first and second elements 401a, 402a described above, but are arranged to cool the second induction coil 203b rather than the first induction coil 203a.

[0089] The first water cooling system 401 a, 402 a and the second water cooling system 401 b, 402 b can be independent of each other or connected to each other. In one example, when the first water cooling system 401 a, 402 a and the second water cooling system 401 b, 402 b are independent, the water used in one water cooling system is separate from the water used in the other system, e.g., the systems run in parallel. In another example, when the first water cooling system 401 a, 402 a and the second water cooling system 401 b, 402 b are connected together, water is recirculated from one water cooling system to the other, e.g., the systems run in series.

[0090] The temperatures of the first and second thermal zones 204, 205 can be controlled by the configuration of the first water cooling systems 401a, 402a and the second water cooling systems 401b, 402b, respectively. For example, the power applied to the induction coils 203a, 203b can be substantially constant, which can result in substantially similar induction heating of the first and second thermal zones 204, 205. However, applying different configurations of the first water cooling systems 401a, 402a and / or the second water cooling systems 401b, 402b can result in different cooling to the first and second thermal zones 204, 205. For example, if a greater water cooling intensity is applied to the first thermal zone 204, e.g., if the water flowing through the first water cooling systems 401a, 402a is configured to flow at a faster velocity, thereby removing more thermal energy from the first thermal zone 204, greater cooling will occur for the first thermal zone 204. As a result, the first thermal zone 204 will have a lower temperature than the second thermal zone 205 .

[0091] It should be noted that although the water-cooled system has been described in connection with using water as the heat transfer medium, other coolants may be used. For example, other liquids with high heat capacity may be used in the water-cooled system, such as oil, deionized water, or solutions of suitable organic chemicals (e.g., ethylene glycol, diethylene glycol, or propylene glycol).

[0092] A chamber 410 located below the crucible 201 may be installed to provide protection for the induction crucible apparatus 400 in the event that the crucible 201 cracks. The chamber 410 may be used, for example, to collect material 202 that escapes from the crucible 201 if the crucible 201 cracks. Collecting material 202 that leaks from the crucible 201 may prevent the material 202 from escaping into the deposition chamber and / or contaminating other components near the induction crucible apparatus 400.

[0093] Additionally, the chamber 410 may be water-cooled to prevent the transfer of thermal energy to the base 201c of the induction crucible apparatus 400. A third water-cooling system 420a-420d may be present to cool the base 201c of the induction crucible apparatus 400. The water in the water-cooling systems 420a-420d may enter the water-cooling system at the first element 420a, pass through the second element 420b, pass through the third element 420c, and exit the water-cooling system at the fourth element 420d. As described in connection with the first water-cooling systems 401a, 402a and the second water-cooling systems 401b, 402b, the first, second, third, and fourth elements 420a, 420b, 420c, and 420d may comprise continuous tubes, pipes, or other such hollow vessels that allow water or another coolant to flow through them.

[0094] In some examples, the induction coils 203a, 203b may be encased in a refractory material 430. The refractory material 430 may, for example, be at least partially disposed around one or more of the induction coils 203a, 203b. The first water cooling systems 401a, 402b and the second water cooling systems 401b, 402b may also be housed within the refractory material 430. The refractory material 430 is, for example, a heat-resistant material that can suppress or limit the transfer of thermal energy. For example, the refractory material 430 may inhibit the transfer of thermal energy from the crucible 201 to the induction coils 203a, 203b. By encasing the induction coils 203a, 203b in the refractory material 430, the refractory material 430 may protect the induction coils 203a, 203b from heat damage from the crucible 201.

[0095] In some examples, the size and / or shape of the induction crucible apparatus 400 can be configured to match the size and / or shape of the substrate. For example, the induction crucible apparatus 400 can be manufactured or selected with specific dimensions to match the dimensions of the substrate. In other words, an appropriate crucible can be selected for a given substrate. Matching the size and / or shape of the induction crucible apparatus 400 to the profile of the substrate can provide an efficient method for optimizing the generation of material vapor for depositing deposition material on the substrate. For example, the material 202 in the crucible can be manufactured with a shape that causes the deposition material to be deposited on all of the substrate, so that no portion of the substrate contains the deposited material.

[0096] In some examples, the size and / or shape of the induction crucible apparatus 400 can be configured to match the deposition chamber that will house the substrate. For example, the induction crucible apparatus can be manufactured or selected with specific dimensions to match the dimensions of the deposition chamber. In other words, an appropriate crucible can be selected for a given deposition chamber. Matching the size and / or shape of the induction crucible apparatus 400 to the deposition chamber can also provide an efficient method for optimizing the deposition of the material 220 in the crucible 201 onto the substrate in the deposition chamber. The induction crucible apparatus 400 can be selected based on specific shapes and / or dimensions that match the shape and / or dimensions of the deposition chamber. Such selection can provide an efficient method for increasing the size of the deposit of deposition material onto the substrate.

[0097] In some examples, the induction crucible apparatus 400 is installed within a deposition chamber. Because the first and second thermal zones of the crucible 201 provide material vapor, the deposition chamber may be maintained at a higher vacuum pressure (i.e., a lower vacuum) than a comparable apparatus equipped with an electron gun system to provide material vapor. In this context, maintaining the deposition chamber at a higher pressure may reduce the time that air or gas within the deposition chamber is evacuated, producing a more efficient process.

[0098] Maintaining the deposition chamber at a higher pressure can provide the ability to perform reactive deposition during the deposition process. In reactive deposition, gases within the deposition chamber that may be injected into the deposition chamber may contain one or more chemical elements and / or molecules that may chemically react with material vapor from the induction crucible apparatus 400. As a result, the material vapor and the elements and / or molecules may chemically react to produce one or more deposition materials. The deposition materials may then be used as part of the deposition process. For example, the deposition materials may be deposited on a substrate.

[0099] In some examples, the induction crucible apparatus 400 may include a continuous feed system whereby material is continuously or otherwise more frequently fed into the crucible 201 so that the amount of material 202 in the crucible 201 does not decrease or remains above a certain threshold. By including a continuous feed system in the induction crucible apparatus 400, the need to turn off the induction crucible apparatus 400 to replenish the material 202 in the crucible 201 may be avoided. This may reduce the amount of downtime of the induction crucible apparatus and provide a more efficient system.

[0100] FIG. 5a is a schematic diagram of a substrate support 500. Features in FIG. 5a that are similar to corresponding features in FIGS. 1 through 4 are labeled with the same reference numbers. Corresponding descriptions apply unless otherwise indicated. The substrate support 500 is configured to support a substrate 501. The substrate support 500 may be configured as a plate, wire, holder, roll-to-roll, reel-to-reel, or other type of holding arrangement to support the substrate 501 in a deposition process. A deposition material may be deposited on the substrate 501 to produce a layer 502 of deposited material.

[0101] In some examples, the deposited material may comprise at least a portion of a material vapor generated by an induction crucible apparatus, such as induction crucible apparatus 200, 300, 400 described with reference to Figures 2 through 4. In some examples, the deposited material may comprise at least a portion of the result of a reactive deposition process. For example, the material vapor generated by the induction crucible apparatus may react with one or more gases in the deposition chamber. More specifically, the material vapor may react with one or more gases in the deposition zone. One or more gases that may be injected into the deposition chamber and enter the deposition zone may contain one or more chemical elements and / or molecules that may chemically react with the material vapor from the induction crucible apparatus to form the deposited material. The deposition material may then be deposited on a substrate, producing a layer 502 of deposited material.

[0102] Figure 5b is a schematic diagram of a substrate support 550. Features in Figure 5b that are similar to corresponding features in Figures 1 to 4 are labeled with the same reference numbers, and corresponding descriptions apply unless otherwise indicated.

[0103] The substrate support 550 may comprise a substrate 501 supported by support systems 550a, 550b. The support systems 550a, 550b may move the substrate 501 in one or more directions. A deposition material 510 may be deposited on the substrate 501 to produce a layer of deposited material 502. A dotted-dashed outline of the layer of deposited material 502 is shown to indicate that the layer 502 comprises the same deposited material as the deposition material 510. The deposition material 510 is deposited on the substrate 501 in a direction 520 to produce the layer of deposited material 502.

[0104] The substrate support 550 may form part of a roll-to-roll or reel-to-reel system, as shown in Figure 5b. The substrate support 550 may include one or more rollers 550a, 550b that assist in moving the substrate 501 relative to the deposition material 510. The substrate 501 may be supported by the rollers 550a, 550b.

[0105] The substrate 501 may be flexible, allowing it to be wrapped around the rollers 550a, 550b. For example, the substrate 501 may first be wrapped around a first roller 550a, gradually unwound from the first roller 550a as the deposition material 510 is deposited on the substrate 501, and then the substrate 501 may be wrapped around a second roller 550b. This produces a continuous roll of the substrate 501. However, in other examples, the substrate 501 may be relatively rigid or inflexible. In such cases, the substrate 501 may be moved relative to the deposition material 510 by the support system 550a, 550b without bending the substrate or bending the substrate to any appreciable amount.

[0106] The roll of substrate 501 may have nothing on it as it is wrapped around roller 550a, or it may have one or more layers 502. In the example shown, there is a layer 502 of material deposited on the substrate 501. As the roll of substrate 501 gradually unwinds from roller 550a, the substrate support moves the substrate 501 relative to the deposited material 510, which is moving in a direction 520 toward the substrate 501.

[0107] Figure 6 is a schematic diagram of a plasma generating system 600 including a plasma source 610. Features in Figure 6 that are similar to corresponding features in Figures 1 to 5 are labeled with the same reference numerals, and corresponding descriptions apply unless otherwise indicated.

[0108] The plasma source 610 is configured to generate a plasma 620 between an induction crucible apparatus (not shown) and a substrate support (not shown). The plasma source 610 may be configured to generate the plasma 620 such that the plasma 620 is substantially absent from the induction crucible apparatus (e.g., the plasma 620 is substantially absent from the crucible). When the plasma 620 is generated away from the induction crucible apparatus, the plasma 620 may be considered substantially absent. For example, the plasma 620 may be generated such that the plasma 620 does not impinge on or physically contact the induction crucible apparatus. There may be a space between the plasma 620 and the crucible so that the plasma 620 generated by the plasma source 610 does not impinge on or physically contact the material in the crucible.

[0109] As described above with reference to Figures 1-4, the induction crucible apparatus is configured to generate material vapor 210. The region in which the material vapor may exist may be referred to as the deposition zone 230. The deposition zone 230 comprises a region between the induction crucible apparatus and the substrate support through which the material vapor 210 may travel. The edges of the deposition zone 230 are illustrated by dashed lines.

[0110] The material vapor 210 may travel in a direction 220 away from the induction crucible apparatus toward the plasma 620. The transmission of the material vapor 210 at least partially through the plasma 620 may produce a deposition material 510 for deposition on a substrate. Due to its passage through the plasma 620, the deposition material 510 may include an energetic cloud of ions, electrons, and neutral atoms / molecules.

[0111] In some examples, the material vapor 210 can interact with the plasma 620, modifying the properties of the material vapor 210 to produce the deposition material 510. The properties of the material vapor 210 can be considered physical or material properties (such as the thermal energy or density of the material vapor) and / or chemical properties (such as chemical composition). In some examples, the interaction with the plasma 620 can retain or increase the energy associated with the material vapor 210 to produce the deposition material 510. Thus, the deposition material 510 can be deposited on the substrate with sufficient energy to form a deposited material having a high-energy crystalline structure. By interacting the material vapor 210 with the plasma 620 to provide more energy and thus produce the high-energy deposition material 510, the need to provide additional energy from an additional process step can be avoided. For example, the interaction of the plasma 620 with the material vapor 210 can provide the energy needed to produce the high-energy deposition material 510 necessary to produce the crystalline structure, thereby avoiding the requirement for an annealing step in the deposition process.

[0112] The plasma source 610 may be an inductively coupled plasma source, for example, configured to generate an inductively coupled plasma 620. The plasma source 610 may include one or more antennas 601 a, 601 b, for example, through which suitable radio frequency (RF) power may be driven by a radio frequency power supply system (not shown) to generate the inductively coupled plasma 620 from the gas within the deposition chamber. The plasma source 610 may be configured to generate the plasma 620 at least partially in the deposition zone 230 of the deposition chamber. For example, the plasma 620 is generated at a location within the deposition chamber such that the material vapor 210 moving in the direction 220 within the deposition zone 230 can interact with the plasma 620.

[0113] In some examples, the plasma 620 can be generated by driving radio frequency current through one or more antennas 601a, 601b, for example, at frequencies between 1 MHz and 1 GHz, between 1 MHz and 100 MHz, between 10 MHz and 40 MHz, or at frequencies of approximately 13.56 MHz or multiples thereof. The RF power causes ionization of gases within the deposition chamber, generating the plasma 620. Adjusting the RF power driven through one or more antennas 601a, 601b can affect the density of the plasma 620. Thus, by controlling the RF power at the plasma source 610, the characteristics of the plasma 620 can be controlled. This can result in increased flexibility in the operation of the deposition system 100.

[0114] The antennas 601a, 601b may be configured to generate the plasma 620 substantially away from the deposition zone 230 in the deposition chamber. When the plasma 620 is generated outside the deposition zone 230 in the deposition chamber, the plasma 620 may be considered to be substantially away. For example, the plasma 620 may be generated at least partially outside the deposition zone 230. In other words, the plasma 620 may be generated far away from the deposition zone 230. The plasma 620 may then be induced from outside the deposition zone 230 and confined within the deposition zone 230. The antennas 601a, 601b may extend substantially parallel to one another and may be configured transverse to one another. The antennas 601a, 601b may be considered to be substantially parallel to one another when the antennas 601a, 601b are positioned approximately parallel to one another. For example, the antennas 601a, 601b may be positioned parallel to one another within a measurement tolerance or with an angular deviation of plus or minus 1, 2, or 5 degrees from parallel. In other words, the distance between the antennas 601a and 601b is constant along the length of the antennas 601a and 601b. Furthermore, the antennas 601a and 601b can be configured laterally relative to one another, such that the antennas 601a and 601b are configured directly above and below one another. For example, as shown in FIG. 6 , the antenna 601a is configured directly above the antenna 601b in the deposition chamber. Such a configuration of the antennas 601a and 601b can enable precise generation of an elongated region of the plasma 620 between the antennas 601a and 601b because the distance between the antennas 601a and 601b is constant along the length of the antennas 601a and 601b. Thus, the plasma 620 can be generated consistently along the length of the antennas 601a and 601b, generating an elongated region of the plasma 620. The localized nature of the elongated region of the plasma 620 can enable precise confinement of the generated plasma 620 to the deposition zone 230.

[0115] In some examples, the antennas 601 a, 601 b can be configured such that the plasma 620 is generated over a region having a length corresponding to the width of the deposition zone 230. This configuration can therefore allow the plasma 620 to be evenly or uniformly available across the width of the deposition zone 230. This can allow for even or uniform interaction of the material vapor 210 with the plasma 620 to produce an even or uniform deposition material 510 for deposition on the substrate.

[0116] Additionally or alternatively, the antennas 601 a, 601 b can have a length similar to the width of the substrate supported by the substrate support. The antennas 601 a, 601 b can be configured such that the plasma 620 is generated over a region having a length corresponding to the width of the substrate. In this manner, the configuration can allow the plasma 620 to be evenly or uniformly available across the entire width of the substrate. This can enable the generation of an even or uniform deposition material on the substrate to deposit an even or uniform deposition material 510 on the substrate.

[0117] The plasma source 610 may include one or more confinement elements 602 a, 602 b, 603 a, 603 a. A first confinement element 602 a, 602 b may be configured between the antennas 601 a, 601 b and the deposition zone 230. The first confinement element 602 a, 602 b may be positioned to guide the plasma 620 from the antennas 601 a, 601 b toward the deposition zone 230 and confine the plasma 620 at least partially within the deposition zone 230 to allow the material vapor 210 to interact with the plasma 620.

[0118] The plasma 620 can be a high density plasma at least in the deposition zone 230. For example, the plasma 620 can be a 10 11 cm -3 The high density plasma 620 in the deposition zone 230 may enable efficient and / or fast interaction between the material vapor 210 and the plasma 620.

[0119] The first confinement elements 602a, 602b may be magnetic elements configured to provide a first confinement magnetic field to guide the plasma from the antennas 601a, 601b toward the deposition zone 230 and at least partially confine the plasma within the deposition zone 230. The first confinement magnetic field may be characterized by magnetic field lines arranged to follow a path from the antennas 601a, 601b toward the deposition zone 230. The plasma 620 tends to follow the magnetic field lines and is therefore confined by the first confinement elements 602a, 602b from the antennas 601a, 601b within the deposition zone 230. For example, ions of the plasma having an initial velocity within the confinement magnetic field experience a Lorentz force, causing the ions to follow a periodic motion around the magnetic field lines. If the initial motion is not strictly perpendicular to the magnetic field, the ions follow a spiral path centered around the magnetic field lines. Thus, the plasma containing such ions tends to follow the magnetic field lines and is thus guided along a path defined thereby. Thus, the first confinement elements 602a, 602b may be suitably positioned such that the plasma 620 is guided towards and at least partially confined within the deposition zone 230 by the confinement magnetic field.

[0120] In some examples, the first confinement elements 602 a, 602 b may be positioned to provide a confining magnetic field characterized by magnetic field lines that follow paths substantially parallel to the paths of the substrate support and / or crucible apparatus, at least in the deposition zone 230. This may allow for a more uniform distribution of the plasma 620 throughout the deposition zone 230, which may result in more uniform interaction between the material vapor 210 and the plasma 620 to generate the deposition material 510 and more uniform deposition of the deposition material 510 on the substrate.

[0121] 6, the plasma source 610 may include first confinement elements 602a, 602b and second confinement elements 603a, 603b. The plasma source 610 may be configured such that the deposition zone 230 is between the first confinement elements 602a, 602b and the second confinement elements 603a, 603b to confine the plasma 620 within the deposition zone 230. For example, the first and second confinement elements 602a, 602b, 603a, 603b may be magnetic elements. The first and second confinement elements 602a, 602b, 603a, 603b may be arranged to together provide a confining magnetic field that confines the plasma 620 from the antennas 601a, 601b within the deposition zone 230 (i.e., confines the plasma 620 between one side of the deposition zone 230). For example, the first and second confinement elements 602a, 602b, 603a, 603b can be arranged such that a region of relatively high magnetic field strength is provided between the first and second confinement elements 602a, 602b, 603a, 603b. The region of relatively high magnetic field strength can extend through the deposition zone 230. The confining magnetic field generated by the first and second confinement elements 602a, 602b, 603a, 603b can be characterized by magnetic field lines that follow paths substantially parallel to the paths of the substrate support and / or crucible apparatus, at least in the deposition zone 230. This can allow for a more uniform distribution of the plasma 620 throughout the deposition zone 230, which can result in more uniform interaction between the material vapor 210 and the plasma 620 to generate the deposition material 510 and enable more uniform deposition of the deposition material 510 on the substrate.

[0122] In some examples, at least one of the first and second confinement elements 602a, 602b, 603a, 603b can be an electromagnet controllable to provide a confinement magnetic field. For example, one or both of the first and second confinement elements 602a, 602b, 603a, 603b can be an electromagnet. The plasma source 610 can include a controller (not shown) arranged to control the strength of the magnetic field provided by one or more electromagnets. This can enable control of the confinement magnetic field, for example, by controlling the arrangement of the magnetic field lines that characterize the confinement magnetic field. This can enable adjustment of the plasma density between the induction crucible device and the substrate support, and therefore, improved control over the deposition of deposition material onto the substrate. This can increase the operational flexibility of the deposition system.

[0123] In some examples, at least one of the first and second confinement elements 602 a, 602 b, 603 a, 603 b can be positioned such that the plasma 620 impinges on or physically contacts the material in the crucible. For example, the plasma 620 can be positioned such that it physically contacts the surface or meniscus of the material in the crucible.

[0124] In some examples, at least one of the first and second confinement elements 602 a, 602 b, 603 a, 603 b can be positioned such that the plasma 620 is substantially absent from the induction crucible apparatus. Such a configuration can be configured to prevent the plasma 620 from impinging on or physically contacting the material in the crucible. Furthermore, by positioning the plasma 620 substantially away from the induction crucible apparatus, damage to the crucible by the plasma 620 is reduced. For example, the plasma 620 can be positioned such that it is spaced from the induction crucible apparatus by a distance of 1 millimeter to 1 meter, or greater.

[0125] In some examples, at least one of the first and second confinement elements 602 a, 602 b, 603 a, 603 b may be provided by a solenoid, which may include one or more coils and define an opening through or through which the plasma 620 may be confined or otherwise pass, in use.

[0126] As shown in FIG. 6, there may be first and second solenoidal confinement elements 602a, 602b, 603a, 603b, with deposition zone 230 disposed therebetween. Plasma 620 may pass from antennas 601a, 601b, through first solenoidal confinement elements 602a, 602b, to deposition zone 230, and toward and through second solenoidal confinement elements 603a, 603b. First solenoidal confinement elements 602a, 602b are shown in cross section, showing two portions of the first solenoidal confinement element (e.g., 602a and 602b). Similarly, second solenoidal confinement elements 603a, 603b are shown in cross section, showing two portions of the second solenoidal confinement element (e.g., 603a and 603b). The second solenoid confinement elements 603a, 603b may have any or a combination of the features of the first solenoid confinement elements 602a, 602b described above.

[0127] As described above, the material vapor 210 may be at least partially transmitted through the plasma 620. The transmission of the material vapor 210 through the plasma 620 may produce the deposition material 510 for depositing on the substrate.

[0128] In some examples, the transfer of material vapor 210 through plasma 620 may allow material vapor 210 to interact with plasma 620. More specifically, material vapor 210 may interact with ionized gas of plasma 620. The interaction of material vapor 210 with ionized gas of plasma 620 may change or modify the properties of material vapor 210 such that deposition material 510 is produced. In other words, material vapor 210 interacts with plasma 620, changing the properties of material vapor 210 in the process to produce a resulting material, which may be referred to as deposition material 510.

[0129] In some examples, the material vapor 210 interacts with the ionized gas in the plasma 620, resulting in an altered vapor flux of the material vapor 210. Thus, the resulting deposited material 510 may have an altered vapor flux. For example, the vapor flux of the material vapor 210 generated by the induction crucible apparatus may not be substantially constant across the deposition zone 230. For example, there may be regions where the density of the material vapor 210 is higher or lower. By transmitting the material vapor 210 through the plasma 620, thereby allowing the material vapor 210 to interact with the ionized gas in the plasma 620, the variation in the vapor flux of the material vapor 210 may be reduced.

[0130] In some examples, the material vapor 210 interacts with the ionized gas of the plasma 620, resulting in altered chemical properties of the material vapor 210. Thus, the resulting deposition material 510 may have chemical properties that differ from those of the material vapor 210.

[0131] For example, one or more reactions between the material vapor 210 and a gas (e.g., an ionized gas of a plasma and / or another gas in the deposition chamber) can produce the deposition material 510. Such a reaction process can be referred to as a reactive deposition process.

[0132] In some examples, gases within the deposition chamber that may be injected into the deposition chamber may include one or more chemical elements and / or molecules that may chemically react with the material vapor 210 from the induction crucible apparatus. As a result, the material vapor 210 and the elements and / or molecules may chemically react to produce one or more deposition materials 510. The deposition materials 510 may then be used as part of a reactive deposition process. For example, the deposition materials 510 may be deposited on a substrate.

[0133] In some examples, the material vapor 210 may be or comprise a precursor material, such that reaction with the ionized gas of the plasma and / or another gas in the deposition chamber may produce a deposition material, for example, for the production of an energy storage device.

[0134] For example, for the manufacture of an energy storage device, the material vapor 210 may be or comprise a precursor material for a cathode layer of the energy storage device, with which a reaction may occur to produce a deposition material suitable for the cathode layer, such as a deposition material suitable for storing lithium ions, such as lithium cobalt oxide, lithium iron phosphate, or an alkali metal polysulfide salt.

[0135] Additionally or alternatively, the material vapor 210 may be or comprise a precursor material for an anode layer of an energy storage device, with which a reaction may occur to produce a deposition material suitable for the anode layer, such as a deposition material comprising lithium metal, graphite, silicon, or indium tin oxide.

[0136] Additionally or alternatively, material vapor 210 may be or comprise a precursor material for an electrolyte layer of an energy storage device. A reaction with the precursor material may occur to produce a deposition material suitable for the electrolyte layer, such as a material that is ionically conductive but also electrically insulator, such as lithium phosphate nitride (LiPON). For example, material vapor 210 may be or comprise LiPO as a precursor material for depositing LiPON on a substrate, e.g., via reaction with a plasma and / or nitrogen gas in a deposition chamber.

[0137] Controlling the properties of the plasma 620 may allow for control of the properties of the deposition material 510. For example, controlling the properties of the ionized gas of the plasma 620 may allow for control of the reaction between the material vapor 210 and the ionized gas of the plasma 620. Thus, the properties of the resulting deposition material 510 may also be controlled.

[0138] For example, controlling the concentration of gases in the plasma and / or deposition zone 230 can be used to control the reaction rate between the gases and material vapor generated by the induction crucible apparatus and / or the crystalline structure (e.g., crystallinity) of the deposition of the crystalline deposition material on the substrate. In one example, controlling the concentration of nitrogen gas in the plasma and / or deposition zone 230 can control the reaction rate between LiPO material vapor and nitrogen gas to produce LiPON deposition material. The electrolyte material LiPON has a crystalline structure that forms a solid electrolyte layer. The crystalline structure can have a regular structure with an ordered arrangement of atoms that can be arranged as a two-dimensional or three-dimensional lattice. The production rate of the LiPON deposition material can be controlled by controlling the concentration of nitrogen gas. Furthermore, the crystalline structure of the LiPON deposition material can be controlled. In another example, controlling the concentration of oxygen gas in the plasma and / or deposition zone 230 can control the reaction rate between lithium and / or cobalt (precursor) material vapor and oxygen gas to produce lithium cobalt oxide (LiCoO) deposition material. For example, the material vapor can be or comprise lithium and / or cobalt for use as a precursor material, such that the precursor material participates in a chemical reaction that produces the deposition material. Heating the precursor material with an induction crucible apparatus produces a lithium and / or cobalt material vapor. Interaction of the lithium and / or cobalt material vapor with the plasma and / or oxygen gas in the deposition zone can produce a lithium cobalt oxide (LiCoO) deposition material. The ability to perform reactive deposition processes offers the potential to produce a wide variety of deposition materials for deposition on a substrate.

[0139] Figure 7 is a schematic diagram of a plasma generation system 700. Features in Figure 7 that are similar to corresponding features in Figures 1 to 6 are labeled with the same reference numerals, and corresponding descriptions apply unless otherwise indicated.

[0140] The example plasma generation system 700 of FIG. 7 is similar to that of FIG. 6, but further includes a gas supply system 701a, 701b, 701c configured to provide at least one gas 702a, 702b, 702c between an induction crucible apparatus (not shown) and a substrate support (not shown).

[0141] 7 includes a first gas inlet 701a for providing a first gas 702a through the plasma 620. When the first gas inlet 701a is configured to provide the first gas 702a, the ionized gas of the plasma 620 can include an ionized form of the first gas 702a. Thus, the material of the material vapor 210 can interact (and react) with the ionized first gas 702a of the plasma 620.

[0142] In some examples, the first gas inlet 701 a can be positioned within the deposition system such that the first gas 702 a is provided through the plasma 620, e.g., the first gas 702 a is transferred to the plasma 620. Thus, the first gas 702 a can be ionized within the plasma 620 to produce an ionized form of the first gas 702 a.

[0143] The gas supply systems 701a, 701b, 701c may further include a second gas inlet 701b to provide a second gas 702b between the plasma 620 and the induction crucible apparatus. When the second gas inlet 701b is configured to provide the second gas 702b, at least a portion of the gas in the deposition zone 230 may include the second gas 702b. Thus, the material of the material vapor 210 may interact (and react) with the second gas 702b.

[0144] In some examples, the second gas inlet 701b can be positioned within the deposition system such that the second gas 702b is provided above the induction crucible apparatus and below the plasma 620. In such a configuration, the material vapor 210 generated by the induction crucible apparatus and traveling in the direction 220 first transmits the second gas 702b and then transmits the plasma 620. The transmission of the material vapor 210 through the second gas 702b can cause the material vapor 210 to interact with the second gas 702b. Furthermore, the transmission of the material vapor 210 through the plasma 620 can cause the material vapor 210 to interact with the plasma 620. Such interaction can, at least in part, generate the deposition material 520. In some examples, not all of the material vapor 210 interacts with the second gas 702b and / or the plasma 620. As a result, the deposition material 520 can, at least in part, include the material vapor 210.

[0145] Gas supply system 701a, 701b, 701c may further include a third gas inlet 701c to provide a third gas 702c between plasma 620 and the substrate support. When third gas inlet 701c is configured to provide third gas 702c, at least a portion of the gases in deposition zone 230 may include third gas 702b. Thus, materials of material vapor 210 and / or deposition material 510 may interact (and react) with third gas 702c.

[0146] In some examples, the third gas inlet 701c can be positioned within the deposition system such that the third gas 702c is provided above the plasma 620 and below the substrate support. In such a configuration, the deposition material 520 generated by interaction with the plasma 620 is transmitted through the third gas 702c. Transmission of the deposition material 520 through the third gas 702c can cause the deposition material 520 to interact with the third gas 702c. In some examples, not all of the deposition material 520 interacts with the plasma 620 and / or the third gas 702c. Thus, the deposition material 520 can include, at least in part, the material vapor 210.

[0147] Deposition material 510 may comprise material of material vapor 210 interacting with gases 702a, 702b, 702c. Similarly, deposition material 510 may comprise material of material vapor 210 interacting with plasma 620.

[0148] It should be understood that the gas supply systems 701a, 701b, and 701c of Figure 7 are merely an example. Other deposition systems may include any combination of first, second, and third gas inlets 701a, 701b, and 701c. Furthermore, the first, second, and third gases may be the same as or different from one another.

[0149] Figure 8 is a schematic diagram of a deposition system 800. Features in Figure 8 that are similar to corresponding features in Figures 1 to 7 are labeled with the same reference numerals, and corresponding descriptions apply unless otherwise indicated.

[0150] The deposition system 800 includes an induction crucible apparatus 200 configured to generate a material vapor 210. The induction crucible apparatus 200 is configured to inductively heat a crucible 201 to generate two or more thermal zones 201 a, 201 b within the crucible 201. The deposition system 800 further includes a substrate support 500 configured to support a substrate 501. Furthermore, the deposition system 800 includes a plasma generation system 700 configured to generate a plasma 620 between the induction crucible apparatus 200 and the substrate support 500. At least partial transfer of the material vapor 210 through the plasma 620 generates a deposition material 510 for deposition on the substrate 501.

[0151] Although induction crucible devices can provide high material vapor production rates, problems can arise with localized areas of higher or lower density material vapor, which can cause uneven deposition of the material on the substrate. The use of plasma in conventional sputter deposition processes can break down the material vapor into a uniform structure, inject energy into the material vapor, and provide gas for reactive deposition. However, sputter deposition processes can suffer from low material vapor production rates.

[0152] In the examples described herein, the combination of the induction crucible apparatus 200 and the plasma 620 may provide various improvements. By combining the induction crucible apparatus 200 with the plasma 620, a high rate of material vapor generation may be combined with the ability to modify the material vapor 210 to have a uniform or homogeneous density. As a result, a high rate of deposition material 510 with a uniform density may be generated for deposition on the substrate 501. The high rate of material vapor 210 generation may be achieved using relatively low energy for the deposition system 800 compared to electron beam evaporation or resistive heating of the crucible. Thus, less energy is required to evaporate the material 202 in the crucible 201 to generate the material vapor 210. Furthermore, the use of the induction crucible apparatus 200 may enable a high degree of control over the stoichiometry of the deposition material 510 due to the ability to control the evaporation (or vaporization) rate of the material 202 in the crucible 201 to generate the material vapor 210 compared to electron beam evaporation or plasma vapor deposition. The ability to control the evaporation rate of the material results from the ability to control the power applied to one or more induction coils 203 of the induction crucible apparatus 200. Furthermore, configuring the shape of the crucible 201 may provide greater control over the size and / or shape of the material vapor 210 compared to sputter deposition. Furthermore, by interacting the material vapor 210 with the plasma 620, the energy associated with the material vapor 210 may be maintained or increased to generate the deposited material 510. Thus, the deposited material 510 may be deposited on the substrate with sufficient energy to form a deposited material having a high-energy crystalline structure. Generating the high-energy deposition material 510 may avoid the need to provide additional energy from additional process steps. For example, the need for an annealing step in the deposition process may be avoided because the interaction of the plasma 610 with the material vapor 210 may provide the energy necessary to generate the high-energy deposition material 510 required to generate the crystalline structure.

[0153] The induction crucible apparatus 200 may further include a crucible 201 and one or more induction coils 203 disposed around the crucible 201. Upon application of power to the one or more induction coils 203, a first thermal zone 204 is generated in at least a first portion of the crucible 201, and a second thermal zone 205 is generated in at least a second portion of the crucible 201. A first temperature of the first thermal zone 204 may be different from a second temperature of the second thermal zone 205.

[0154] The one or more induction coils 203 may include a first induction coil disposed around a first portion of the crucible and a second induction coil disposed around a second portion of the crucible. A first power may be applied to the first induction coil and a second power may be applied to the second induction coil. The second power may be different from the first power.

[0155] The first portion of the crucible may be disposed between a base of the crucible 201 and a second portion of the crucible 201. Upon application of power to the one or more induction coils 203, a first temperature of the first thermal zone 204 may meet or exceed a first temperature threshold for melting the material heated by the induction crucible apparatus 200. Additionally or alternatively, upon application of power to the one or more induction coils 203, a second temperature of the second thermal zone 205 may meet or exceed a second temperature threshold for vaporizing the material heated by the induction crucible apparatus 200 to produce a material vapor 210.

[0156] The plasma source 610 can be configured to generate a plasma 620 between the induction crucible apparatus 200 and the substrate support 500 such that the plasma 620 is substantially absent from the crucible 201 .

[0157] The gas supply system 701 a , 701 b , 701 c can be configured to provide at least one gas 702 a , 702 b , 702 c between the induction crucible apparatus 200 and the substrate support 500 .

[0158] The gas supply systems 701a, 701b, 701c may include a first gas inlet 701a for providing a first gas 702b through the plasma 620. The gas supply systems 701a, 701b, 701c may further include a second gas inlet 701b for providing a second gas 702b between the plasma 620 and the induction crucible apparatus 200. The gas supply systems 701a, 701b, 701c may further include a third gas inlet 701c for providing a third gas 702c between the plasma 620 and the substrate support 500.

[0159] The gas supply systems 701a, 701b, 701c may be further configured to control the rate at which at least one gas 702a, 702b, 702c (collectively referred to as 702) is provided between the induction crucible apparatus 200 and the substrate support 500. The gas may comprise nitrogen, argon, oxygen, ammonia, nitrogen oxides, and / or helium.

[0160] The gases, which may be the first gas 702 a, the second gas 702 b, and / or the third gas 702 c, may be provided to the deposition chamber at a given rate by the gas supply systems 701 a, 701 b, 701 c. For example, the rate at which the gases are supplied to the deposition chamber may be controlled by the gas supply systems 701 a, 701 b, 701 c.

[0161] In some examples, a gas may be provided at a first rate for a first time to generate a first deposition material 510. The generation of the first deposition material 510 may be performed by at least partially transmitting the material vapor 210 through the gas 702 and / or the plasma 620 for a first time. The first deposition material 510 may have characteristics that depend on the first rate of the gas 702. The rate at which the gas 702 is supplied to the system (e.g., the first rate) may determine the characteristics of the first deposition material 510. For example, if the rate at which the gas 702 is supplied to the system is slow, the concentration of the gas 702 in the deposition chamber may be low. As a result, the likelihood that the material vapor 210 will interact and / or react with the gas 702 may be small. Therefore, the generation rate of the first deposition material 510 (generated from the interaction between the material vapor 210 and the gas 702a) may be low. The first deposition material 510 may be deposited on the substrate 501 to generate a layer 502 of the first deposited material. As a result, the first deposited layer of material 502 will have characteristics that depend on the rate at which gas 702 is supplied to the system.

[0162] In some examples, the gas 702 may be provided at a second rate for a second time to generate the second deposition material 510. The second rate may be different from the first rate, and the second time may be different from the first time, e.g., the second time may be slower than the first time. The generation of the second deposition material 510 may be performed by at least partially transmitting the material vapor 210 through the gas 702 and / or the plasma 620 for a second time. The rate at which the gas 702 is supplied to the system (e.g., the second rate) may determine the characteristics of the second deposition material 510. For example, when the rate at which the gas is supplied to the system is high (e.g., higher than the first rate), the concentration of the gas 702 in the deposition chamber may be high. As a result, the material vapor 210 may be more likely to interact and / or react with the gas 702. Therefore, the generation rate of the deposition material 510 (generated from the interaction of the material vapor 210 and the gas 702) may be higher (e.g., higher than generation at the first rate). A second deposited material 510 can be deposited on the substrate 501 to produce a layer of second deposited material 502. As a result, the layer of second deposited material 502 will have characteristics that depend on the rate at which gas 702 is supplied to the system.

[0163] In further cases, the characteristics of the deposited material may depend on the relative proportions of at least two different gases provided in the deposition zone 230, for example, by the first, second and / or third inlets 701 a, 701 b, 701 c. It should be understood that in some cases, the deposition system may have more or fewer gas inlets than those in FIG. 8, which is merely an example.

[0164] In some examples, the layer 502 of deposited material (e.g., the first deposited material and / or the second deposited material) may be analyzed to determine its characteristics. For example, the layer 502 of deposited material may be analyzed by spectroscopic techniques such as, but not limited to, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, infrared spectroscopy, and / or nuclear magnetic resonance spectroscopy. Performing spectroscopy on the layer 502 of deposited material may provide spectroscopic data regarding characteristics of the layer 502, such as, for example, the thickness or depth of the layer 502, the uniformity or homogeneity of the layer 502, the crystal structure, chemical composition, and / or electrical properties such as ionic conductivity and activation energy. The spectroscopic data may be used as part of a feedback loop to automatically maintain one or more characteristics of the layer 502 without the need for human intervention.

[0165] For example, after analyzing the spectroscopic data of the layer of first deposition material 502, parameters of the deposition system (e.g., the rate of production of material vapor, the power applied to one or more induction coils, the density of the plasma, and / or the rate of gas provided to the deposition system) may be altered to modify the properties of the layer of first deposition material 502. After the alteration, a second deposition material is deposited on the substrate to produce the layer of second deposited material 502. As a result, the properties of the layer of second deposited material 502 may differ from the properties of the layer of first deposition material 502. For example, to maintain substantially constant or consistent properties of the layer of deposited material 502 as the deposition process is performed, parameters of the deposition system may be altered and materials in the deposition system (e.g., material 202 in crucible 201, gas 702 in the deposition chamber, etc.) may be changed.

[0166] The properties (e.g., material properties, electrical properties, and / or chemical properties) of the deposited material can be controlled by controlling the rate at which the material vapor is generated. For example, the thickness and / or density of the deposited material on the substrate can be higher when the material vapor is generated at a higher rate. In some examples, increasing the temperature of one or more thermal zones within the induction crucible can increase the rate at which the material vapor is generated.

[0167] In some examples, the power applied to the one or more induction coils 203 may be controlled by a feedback loop based at least in part on temperature measurements by temperature sensors in the first and / or second thermal zones 204, 205. As a result, the temperature of the first and / or second thermal zones 204, 205 may be automatically controlled. Thus, a substantially constant material vapor 210, or a material vapor 210 with less fluctuation in vapor flux than existing systems, may be achieved in the second thermal zone 205. As a result, one or more characteristics of the layer 502 (e.g., the thickness or density of the layer 502, the uniformity or homogeneity and / or chemical composition of the layer 502) may be automatically controlled.

[0168] The properties (e.g., material properties, electrical properties, and / or chemical properties) of the deposited material can be controlled by controlling the density of the plasma. For example, the uniformity or homogeneity of the deposited material on the substrate can be increased by increasing the density of the plasma. In some examples, generating a high-density plasma increases the likelihood that the material vapor will interact and react with the plasma to produce a uniform or homogeneous deposited material.

[0169] In some examples, the density of the plasma 620 (e.g., controlled by the plasma source 610) may be controlled by a feedback loop based at least in part on spectroscopic data of the deposited layer of material 502. As a result, one or more characteristics of the layer 502 (e.g., the thickness or density of the layer 502 and / or the uniformity or homogeneity of the layer 502) may be automatically controlled.

[0170] The properties (e.g., material properties, electrical properties, and / or chemical properties) of the deposited material can be controlled by controlling the rate at which gas is supplied to the deposition system. For example, the rate at which the deposited material is produced can be increased by providing a higher rate of gas, so that the material vapor has a higher chance of interacting with the gas in the deposition system (to produce the deposited material).

[0171] In some examples, the rate at which gas 702 is supplied to the system (e.g., controlled by gas supply systems 701a, 701b, 701c) may be controlled by a feedback loop based at least in part on spectroscopic data about the deposited layer of material 502. As a result, one or more characteristics of layer 502 (e.g., crystal structure and / or chemical composition) may be automatically controlled.

[0172] Depositing a deposition material on a substrate can include depositing the deposition material substantially uniformly on the substrate. The deposition of a material on a substrate can be considered substantially uniform when the deposition on the substrate is approximately uniform. The deposition on a substrate can be considered approximately uniform when the thickness or depth of the material deposited on the substrate is approximately constant across the substrate. For example, the thickness of the material deposited on the substrate can be approximately constant within a measurement tolerance, or can vary within plus or minus 1, 5, or 10 percent of the thickness of the material deposited on the substrate.

[0173] Additionally, depositing a deposition material on a substrate can include depositing a deposition material having a crystalline structure on the substrate. For example, a deposition process can be used to deposit an electrolyte layer, such as LiPON, on the substrate. In some examples, the electrolyte material, LiPON, can be generated from a reaction of LiPO material vapor with nitrogen gas in a plasma and / or deposition chamber. As described above, controlling the rate at which nitrogen gas is supplied to the deposition chamber can be controlled by gas supply systems 701a, 701b, and 701c. As a result, characteristics of the crystalline structure of the LiPON deposition material, such as the rate of production of the LiPON deposition material or the structure of the LiPON deposition material itself, can be controlled by gas supply systems 701a, 701b, and 701c.

[0174] The deposition system 800 can be configured to transmit the material vapor 210 at least partially through the plasma 620. Additionally, the deposition system 800 can be configured to transmit the material vapor 210 at least partially through the gases 702 to cause the material of the material vapor 210 to interact with at least one of the gases 702 and / or the plasma 620 to produce the deposition material 510.

[0175] The deposition system 800 can be configured for use in the manufacture of an energy storage device. For example, the deposition material 510 can comprise material for an electrode layer or an electrolyte layer of an energy storage device.

[0176] 9 is a flow diagram illustrating a method for depositing a deposition material onto a substrate, which method can be performed using the system described above.

[0177] In block 910 of flow diagram 900, an induction crucible apparatus is inductively heated to create two or more thermal zones for heating a material contained within the induction crucible apparatus to produce a material vapor.

[0178] In block 920 of flow diagram 900, a plasma is generated between the induction crucible device and the substrate.

[0179] In block 930 of flow diagram 900, the material vapor is at least partially transferred through a plasma to produce a deposition material.

[0180] In block 940 of flow diagram 900, a deposition material is deposited on a substrate.

[0181] The above examples should be understood as illustrative examples. Further examples are contemplated. It should be understood that any feature described in connection with any one example may be used alone or in combination with other features described, and may be used in combination with one or more features of any other example or any combination of the other examples. Furthermore, equivalents and modifications not described above may also be used without departing from the scope of the appended claims.

Claims

1. 1. A deposition system comprising: an induction crucible apparatus configured to generate a material vapor, wherein, in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones within the crucible; a substrate support configured to support a substrate; a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support, the material vapor transmitting at least partially through the plasma to generate a deposition material for deposition on the substrate; The induction crucible device comprises: The crucible; one or more induction coils disposed about the crucible such that, upon application of power to the one or more induction coils, a first heat zone is created in at least a first portion of the crucible and a second heat zone is created in at least a second portion of the crucible; wherein a first temperature of the first thermal zone is different from a second temperature of the second thermal zone; the first portion of the crucible is disposed between a base of the crucible and the second portion of the crucible, and upon application of power to the one or more induction coils, a first temperature of the first thermal zone that, in use, is equal to or exceeds a first temperature threshold for melting material heated by the induction crucible apparatus; or the second temperature of the second thermal zone is at least one of equal to or exceeding a second temperature threshold for vaporization of a material that, in use, is heated by an induction crucible apparatus to produce the material vapor; Deposition system.

2. The one or more induction coils a first induction coil disposed around the first portion of the crucible; a second induction coil disposed around the second portion of the crucible such that a first power can be applied to the first induction coil and a second power different from the first power can be applied to the second induction coil; The deposition system of claim 1 , comprising:

3. 3. The deposition system of claim 1, wherein the plasma source is configured to generate the plasma between the induction crucible arrangement and the substrate support such that the plasma is substantially absent from the crucible.

4. The deposition system of claim 1 , comprising a gas supply system configured to provide at least one gas between the induction crucible arrangement and the substrate support.

5. The gas supply system includes: a first gas inlet for, in use, providing a first gas through said plasma; a second gas inlet for providing a second gas between the plasma and the induction crucible arrangement in use; or a third gas inlet for, in use, providing a third gas between said plasma and said substrate support; 5. The deposition system of claim 4, comprising at least one of:

6. 6. The deposition system of claim 4 or claim 5, wherein the gas supply system is configured to control a rate at which at least one gas is provided between the induction crucible arrangement and the substrate support.

7. 7. The deposition system of claim 4, wherein the deposition system is configured, during use, to transmit the material vapor at least partially through a plasma and at least partially through a gas to cause the material of the material vapor to interact with at least one gas and / or plasma to produce the deposition material.

8. The deposition system of claim 1 , wherein the deposition system is configured for use in manufacturing an energy storage device.

9. inductively heating an induction crucible apparatus to create two or more heat zones and heating a material contained in the induction crucible apparatus to create a material vapor; generating a plasma between the induction crucible device and a substrate; transmitting the material vapor at least partially through a plasma to produce a deposition material; depositing the deposition material on the substrate; Including, Inductively heating the induction crucible device includes: applying power to one or more induction coils disposed around a crucible of the induction crucible apparatus to create a first heat zone in a first portion of the crucible and a second heat zone in a second portion of the crucible; wherein a first temperature of the first thermal zone is different from a second temperature of the second thermal zone; The first portion of the crucible is disposed between a base of the crucible and the second portion of the crucible, and inductively heating the induction crucible apparatus includes: melting a first portion of the material in the first portion of the crucible; vaporizing a second portion of the material in the second portion of the crucible to produce a material vapor; and further comprising configuring the at least one of: method.

10. The method of claim 9 , wherein the plasma is substantially absent from the induction crucible apparatus.

11. 11. The method of claim 9 or 10, comprising providing at least one gas between the induction crucible apparatus and the substrate.

12. The method of claim 11 , wherein generating the deposition material comprises the material of the material vapor interacting with at least one gas and / or plasma.

13. transmitting the material vapor at least partially through the plasma and at least partially through the gas at a first rate for a first time, thereby generating the deposition material as a first deposition material at the first time; and transmitting the material vapor at least partially through the plasma and at least partially through the gas at a second rate different from the first rate and at a second time different from the first time, thereby producing a second deposition material different from the first deposition material at the second time.

13. The method of claim 11 or claim 12, comprising providing one of at least one gas.

14. The method of claim 13 , wherein the first deposition material has a different chemical composition than the second deposition material.

15. 15. The method of any one of claims 11 to 14, wherein the at least one gas comprises nitrogen, argon, oxygen, ammonia, nitrogen oxides and / or helium.

16. 16. The method of any one of claims 11 to 15, comprising controlling a rate at which one of the at least one gas is provided to control the crystallinity of the deposition material deposited on the substrate.

17. 17. The method of any one of claims 9 to 16, comprising controlling at least one of the rate of generation of the material vapor or the density of the plasma to control the material properties of the deposition material.

18. 18. The method of any one of claims 9 to 17, wherein depositing the deposition material onto the substrate comprises depositing the deposition material substantially homogeneously onto the substrate.

19. 19. The method of claim 9, wherein depositing the deposition material on the substrate comprises depositing the deposition material having a crystalline structure on the substrate.

20. 20. The method of claim 9, wherein the deposition material deposited on the substrate comprises a material for an electrode layer or an electrolyte layer of an energy storage device.

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