Image pickup device and method for manufacturing the same

Abstract

Provided is an imaging device configuration to which a simple mounting method can be applied. This imaging device is provided with an imaging element, a wiring board, and a sealing portion. The imaging element is provided with: an imaging chip in which an optically transmissive portion transmissive to incident light is disposed and which generates an image signal on the basis of the incident light that has passed through the optically transmissive portion; and a pad disposed on a bottom surface of the imaging chip different from a surface on which the optically transmissive portion is disposed, the pad transmitting the generated image signal. The wiring board has a wire connected to the pad and extending to a region outside the imaging element, and has the imaging element disposed on a surface thereof. The sealing portion is disposed adjacent to a side surface which is a surface adjacent to the bottom surface of the imaging element, and seals the imaging element.

Description

[Technical Field]

[0001] The present disclosure relates to an imaging device and a method for manufacturing the imaging device, and more particularly to an imaging device in which pads of a semiconductor chip constituting an imaging element are rearranged and sealed in a package, and a method for manufacturing the imaging device. [Background technology]

[0002] Conventionally, imaging devices have been used that include a package that is miniaturized to the size of a semiconductor chip. For example, an image sensor device has been proposed in which a third semiconductor chip and a second semiconductor chip are stacked, and a fan-out wafer-level package containing a first semiconductor chip is connected to the back side of the second semiconductor chip via solder bumps (see, for example, Patent Document 1). This third semiconductor chip constitutes an image sensor. The third semiconductor chip generates an image signal based on incident light irradiated onto its light-receiving surface and outputs the image signal to a second semiconductor chip stacked on its back side, which is a surface different from the light-receiving surface. A logic circuit that processes the image signal generated by the image sensor is disposed on the second semiconductor chip, and the processed image signal is output to the first semiconductor chip. A memory that stores the image signal processed by the logic circuit is disposed on the first semiconductor chip.

[0003] In this conventional technology, the third semiconductor chip and the second semiconductor chip are in the form of bare chips, while the first semiconductor chip is enclosed in a fan-out wafer level package. Here, a fan-out wafer level package (FOWLP) is a package in which the rewiring area drawn from the pads of the semiconductor chip is expanded to the area of ​​the encapsulant surrounding the semiconductor chip, and is a package that can widen the wiring area compared to a CSP (Chip Size Package). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2018-078274 Summary of the Invention [Problem to be solved by the invention]

[0005] The above-mentioned conventional technology has a problem in that it is difficult to mount an image sensor device. The output image signal of the above-mentioned image sensor device is output to a pad arranged on the light-receiving surface side of the third semiconductor chip. Therefore, it is necessary to connect a bonding wire or the like to the pad on the light-receiving surface side to extract the image signal, which makes it difficult to mount the image sensor device.

[0006] The present disclosure has been made in consideration of the above-mentioned problems, and aims to configure an imaging device to which a simple mounting method can be applied. [Means for solving the problem]

[0007] The present disclosure has been made to solve the above-mentioned problems, and a first aspect thereof is an imaging device comprising: an imaging chip having a light-transmitting section that transmits incident light and generates an image signal based on the incident light that has passed through the light-transmitting section; an imaging element having pads that are arranged on a bottom surface of the imaging chip, which is a surface different from the surface on which the light-transmitting section is arranged, and that transmit the generated image signal; a wiring board that is connected to the pads and has wiring that extends to a region outside the imaging element and on which the imaging element is arranged; and a sealing section that is arranged adjacent to a side surface that is a surface adjacent to the bottom surface of the imaging element and that seals the imaging element.

[0008] In this first aspect, the imaging element may further include a protrusion disposed on the pad, and the wiring board may include the wiring connected to the pad via the protrusion.

[0009] In addition, in this first aspect, the imaging element may further include an insulating film disposed on the bottom surface of the imaging chip.

[0010] In the first aspect, the imaging element sealed by the sealing portion may be disposed on the wiring board.

[0011] In this first aspect, the sealing section may seal the imaging element disposed on the wiring board.

[0012] In addition, in the first aspect, a connection portion may be further provided that is disposed on a rear surface, which is a surface different from the front surface, of the wiring board and is connected to the wiring.

[0013] In addition, in this first aspect, a second semiconductor element may be further provided that is disposed on the wiring board, and the sealing portion may further seal a side surface of the second semiconductor element.

[0014] In this first aspect, the second semiconductor element may include a processing circuit that processes the output image signal.

[0015] In this first aspect, the second semiconductor element may be a second imaging element.

[0016] In the first aspect, a plurality of the second semiconductor elements may be disposed on the wiring board, and the sealing portion may further seal side surfaces of the plurality of second semiconductor elements.

[0017] In this first aspect, the light-transmitting portion may be made of glass.

[0018] In the first aspect, the light transmitting portion may be made of resin.

[0019] Furthermore, a second aspect of the present disclosure is a method for manufacturing an imaging device, including: a wiring board arrangement step of arranging an imaging element, the imaging element including an imaging chip having a translucent portion that transmits incident light and generates an image signal based on the incident light that has passed through the translucent portion, and an imaging element including pads that are arranged on a bottom surface of the imaging chip, which is a surface different from the surface on which the translucent portion is arranged, and that transmit the generated image signal, on a surface of a wiring board that is connected to the pads and has wiring that extends to an area outside the imaging element; and a sealing step of arranging a sealing member on a side surface that is a surface adjacent to the bottom surface of the imaging element.

[0020] By adopting the above-described aspect, the wiring layer of the wiring board connected to the pads of the imaging chip of the imaging element in the imaging device is extended to the area outside the imaging element, and rearrangement of the pads of the imaging chip by the wiring layer is assumed. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is a diagram illustrating a configuration example of an imaging device according to an embodiment of the present disclosure. [Figure 2] 1 is a cross-sectional view illustrating a configuration example of an imaging device according to a first embodiment of the present disclosure. [Figure 3] 3A to 3C are diagrams illustrating an example of a manufacturing method for an imaging device according to a first embodiment of the present disclosure. [Figure 4] 3A to 3C are diagrams illustrating an example of a manufacturing method for an imaging device according to a first embodiment of the present disclosure. [Figure 5] 3A to 3C are diagrams illustrating an example of a manufacturing method for an imaging device according to a first embodiment of the present disclosure. [Figure 6] 3A to 3C are diagrams illustrating an example of a manufacturing method for an imaging device according to a first embodiment of the present disclosure. [Figure 7] FIG. 4 is a cross-sectional view showing another configuration example of the imaging device according to the first embodiment of the present disclosure. [Figure 8] 10A to 10C are diagrams illustrating an example of a manufacturing method for an imaging device according to a second embodiment of the present disclosure. [Figure 9] 10A to 10C are diagrams illustrating an example of a manufacturing method for an imaging device according to a second embodiment of the present disclosure. [Figure 10] 10A to 10C are diagrams illustrating an example of a manufacturing method for an imaging device according to a second embodiment of the present disclosure. [Figure 11] FIG. 10 is a cross-sectional view illustrating a configuration example of an imaging device according to a third embodiment of the present disclosure. [Figure 12] FIG. 10 is a cross-sectional view illustrating a configuration example of an imaging device according to a fourth embodiment of the present disclosure. [Figure 13] FIG. 10 is a cross-sectional view illustrating a configuration example of an imaging device according to a fifth embodiment of the present disclosure. [Figure 14] FIG. 13 is a cross-sectional view showing a configuration example of an imaging device according to a sixth embodiment of the present disclosure. [Figure 15] FIG. 1 is a diagram illustrating a configuration example of an imaging element according to an embodiment of the present disclosure. [Figure 16] 1 is a block diagram illustrating a schematic configuration example of a camera that is an example of an imaging device to which the present technology can be applied. DETAILED DESCRIPTION OF THE INVENTION

[0022] Next, modes for carrying out the present disclosure (hereinafter referred to as embodiments) will be described with reference to the drawings. In the following drawings, identical or similar parts are designated by identical or similar reference numerals. The embodiments will be described in the following order. 1. First embodiment 2. Second embodiment 3. Third Embodiment 4. Fourth Embodiment 5. Fifth Embodiment 6. Sixth Embodiment 7. Seventh Embodiment 8. Camera application example

[0023] <1. First embodiment> [Configuration of imaging device] FIG. 1 is a diagram illustrating an example configuration of an imaging device according to an embodiment of the present disclosure. The diagram is a perspective view illustrating an example configuration of an imaging device 10. The imaging device 10 in the diagram is configured by being sealed in a semiconductor package having an imaging element 100. The imaging element 100 is a semiconductor element that generates an image signal based on incident light. A light-transmitting portion 130 that transmits the incident light is disposed on a light-receiving surface that is irradiated with the incident light. The imaging element 100 is mounted on a wiring substrate 20, and the side surfaces of the imaging element 100 are sealed with a sealing portion 40.

[0024] [Cross-sectional structure of the imaging device] 2 is a cross-sectional view showing an example of the configuration of an imaging device according to the first embodiment of the present disclosure. The imaging device 10 in the figure includes an imaging element 100, a wiring substrate 20, a sealing portion 40, and a connecting portion 30.

[0025] As described above, the imaging element 100 is a semiconductor element that generates an image signal based on incident light, and includes an imaging chip 110, a light-transmitting portion 130, an adhesive 120, a pad 150, a bump 160, and an insulating film 140.

[0026] The imaging chip 110 is a semiconductor substrate on which a plurality of pixels (pixels 102, described later) that generate image signals based on incident light are arranged. This imaging chip 110 can be made of, for example, silicon (Si). Each pixel is provided with an on-chip lens 111 that focuses incident light. The figure shows the on-chip lenses 111 arranged for each pixel on the surface of the imaging chip 110. In addition to the pixels, the imaging chip 110 is also provided with a processing circuit and the like that processes image signals. The configurations of the pixels and processing circuits will be described in detail below.

[0027] The light-transmitting section 130 is a substrate that transmits incident light. The light-transmitting section 130 also protects the imaging chip 110. The light-transmitting section 130 can be made of a transparent material such as glass or resin.

[0028] The adhesive 120 is used to bond the light-transmitting portion 130 to the light-receiving surface side of the imaging chip 110. The adhesive 120 can be made of a transparent resin.

[0029] The pads 150 are electrodes arranged on the bottom surface of the imaging chip 110, which is a surface different from the light-receiving surface. Image signals generated by the pixels are output to these pads 150. Control signals and power supply other than these image signals are also transmitted via the pads 150. A plurality of such pads 150 are arranged on the bottom surface of the imaging chip 110, and form input / output terminals of the imaging chip 110. The pads 150 can be made of a metal such as copper (Cu).

[0030] The bumps 160 are columnar protrusions arranged on the pads 150. The pads 150 are connected to a wiring layer 22 of the wiring substrate 20, which will be described later, via the bumps 160. The bumps 160 can be made of a metal such as Cu or gold (Au). The bumps 160 can also be made of solder. The bumps 160 can also be formed by plating, for example. The shape of the bumps 160 can be changed depending on the pitch at which the bumps 160 are arranged. The bumps 160 are an example of a protrusion as defined in the claims.

[0031] The insulating film 140 insulates the bottom surface of the imaging chip 110. This insulating film 140 is configured to cover the side surfaces of the pads 150, protecting the bottom surface of the imaging chip 110 and the pads 150. The insulating film 140 in the same figure is configured to cover the side surfaces of the bumps 160, further protecting the bumps 160. This insulating film 140 can be made of a resin such as solder resist, for example. The insulating film 140 can also be made of an inorganic material such as silicon oxide (SiO2) or silicon nitride (SiN).

[0032] The wiring board 20 is a substrate on which the imaging element 100 is mounted. The wiring board 20 includes a wiring layer 22 and an insulating layer 21. The wiring layer 22 is wiring that transmits signals from the imaging element 100. The wiring layer 22 in the figure is connected to pads 150 via bumps 160 of the imaging element 100 and is configured to extend to an area outside the imaging element 100. The wiring layer 22 can be made of metal such as Cu, Au, nickel (Ni), chromium (Cr), and palladium (Pd). The insulating layer 21 insulates the wiring layer 22. The insulating layer 21 can be made of epoxy resin, polyimide resin, acrylic resin, phenolic resin, or the like. The wiring layer 22 and the insulating layer 21 can be configured in multiple layers. The wiring layers 22 arranged on different layers are connected to each other by vias 23. The vias 23 can be made of columnar metal or the like. Wiring board pads 24 are arranged on the back surface of the wiring board 20. The wiring board pads 24 are connected to the pads 150 of the imaging element 100 through the wiring layer 22 and vias 23. Furthermore, the wiring board pads 24 are joined to the connection portions 30, which will be described later.

[0033] The sealing portion 40 seals the imaging element 100. The sealing portion 40 in the figure is disposed adjacent to the side surface of the imaging element 100 and seals the side surface of the imaging element. The sealing portion 40 is also disposed adjacent to an area of ​​the wiring substrate 20 outside the area where the imaging element 100 is disposed. The sealing portion 40 can be made of epoxy resin, polyimide resin, or the like. Filler can also be dispersed in these resins to improve the strength of the sealing portion 40. Note that it is preferable to use a material with a low thermal expansion coefficient for the sealing portion 40, as this can reduce warping of the wiring substrate 20 after sealing.

[0034] The connection portion 30 is disposed on the rear surface of the wiring board 20, which is a surface different from the surface on which the imaging element 100 is disposed, and is connected to the wiring layer. The connection portion 30 in the same figure is connected to the wiring board pad 24. This connection portion 30 constitutes a terminal of the imaging device 10, and can be made of metal such as a solder ball.

[0035] The wiring board 20 is disposed adjacent to the bottom surfaces of the image sensor 100 and the sealing portion 40. The wiring layer 22 and the vias 23 connect the pads 150 of the image sensor 100 to the wiring board pads 24. Some of the wiring board pads 24 are disposed in an area outside the image sensor 100. That is, the positions of the pads 150 of the image sensor 100 are relocated to a shape that expands into the area of ​​the sealing portion 40. This type of package is called a FOWLP, and is applicable to semiconductor chips that have more pads than CSPs. The image sensor 10 shown in the figure is a package in which the image sensor 100 is encapsulated in a FOWLP, and the side surfaces other than the light-receiving surface are sealed with the sealing portion 40. Image capture can be performed without being hindered by the sealing portion 40.

[0036] It is also possible to place chip components (not shown) such as capacitors on the back surface of the wiring board 20. Specifically, the chip components can be mounted by soldering to the wiring board pads 24 on which the connection portions 30 are not placed.

[0037] [Method of manufacturing an imaging device] 3 to 6 are diagrams illustrating an example of a method for manufacturing the imaging device according to the first embodiment of the present disclosure.

[0038] First, the imaging element 100 is fixed to a support substrate 90. The support substrate 90 is a substrate for supporting components in the manufacturing process of the imaging device 10. For example, a glass plate or a semiconductor wafer can be used as the support substrate 90. The light-transmitting portion 130 side of the imaging element 100 is placed on and fixed to the support substrate 90. An adhesive (not shown) can be used for this fixation (A in FIG. 3).

[0039] Next, the insulating film 140 is disposed on the bottom surface of the imaging element 100. This can be done, for example, by applying a liquid material for the insulating film 140 (B in FIG. 3).

[0040] Next, the sealing portion 40 is placed. This can be done, for example, by placing a liquid sealing portion 40 by a coating method or a screen printing method, and then hardening the sealing portion 40. Alternatively, for example, the sealing portion 40 can be formed by a molding method using a metal mold (C in FIG. 3). This step corresponds to the sealing step.

[0041] Next, the surface of the sealing portion 40 is ground, and the surface of the insulating film 140 is also ground to expose the bumps 160 (D in FIG. 4).

[0042] Next, the insulating layer 21 is disposed on the surfaces of the insulating film 140 and the sealing portion 40. This can be done, for example, by applying a material film for the insulating layer 21 (E in FIG. 4). To, An opening 401 is formed in the insulating layer 21 in a region where the wiring layer 22 will be disposed. This can be formed by forming a resist by photolithography and then performing etching using this resist as a mask. When a photosensitive resist is used for the insulating layer 21, the opening 401 can be formed by forming the insulating layer 21, followed by exposure and development (F in FIG. 4). Next, a metal or other material for the wiring layer 22 is disposed in the opening 401 (G in FIG. 5). This can be formed, for example, by plating. Specifically, a barrier layer such as Ti and a seed layer such as Cu are sequentially stacked on the surface of the insulating layer 21 by sputtering or the like, a resist mask formed by photolithography is disposed, and a Cu layer is formed by plating. This allows the wiring layer 22 to be connected to the pads 150 of the image sensor 100 via the bumps 160. The formation of the insulating layer 21 and the wiring layer 22 is repeated as many times as necessary. On the back surface of the wiring board 20, wiring board pads 24 are formed by the same process as for the wiring layer 22. This allows the wiring board 20 to be placed (H in FIG. 5). This step corresponds to the wiring board placement step.

[0043] Next, the connection portions 30 are placed on the wiring board pads 24 of the wiring board 20. This can be done, for example, by placing the connection portions 30 formed as solder balls on the wiring board pads 24 to which flux has been applied, and then heating them in a reflow furnace or the like to melt the solder balls (I in FIG. 6).

[0044] Next, the support substrate 90 is removed, and the adhesive is removed to expose the surface of the light-transmitting portion 130 of the imaging element 100 (J in FIG. 6). Through the above steps, the imaging device 10 can be manufactured.

[0045] By employing such a manufacturing method, the light-transmitting portion 130 of the imaging element 100 can be protected by the support substrate 90. Furthermore, by arranging the bumps 160 that connect the pads 150 of the imaging element 100 and the wiring layer 22 of the wiring substrate 20 on the side of the imaging element 100, a wafer process can be applied to the formation of the bumps 160. The bumps 160 can be formed more easily than when the bumps are formed on the side of the wiring substrate 20. Furthermore, by arranging the insulating film 140 on the bottom surface of the imaging chip 110, the bumps 160 can be protected during the manufacturing process.

[0046] It should be noted that the manufacturing method of the imaging device is not limited to this example. For example, when forming the bumps 160 by plating, the bumps 160 can be formed after the insulating film 140 is disposed on the bottom surface of the imaging element 100. Specifically, in B of Fig. 3, openings can be formed in the insulating film 140 in the areas where the bumps 160 are to be formed, and Cu formed by plating can be embedded in these openings to form the bumps 160.

[0047] [Variations] In the imaging element 100 described above, the adhesive 120 is disposed over the entire light receiving surface of the imaging chip 110, but an imaging element 100 with a different configuration may also be used.

[0048] [Other configurations of the imaging device] 7 is a cross-sectional view showing another example of the configuration of the imaging device according to the first embodiment of the present disclosure. The imaging device 10 in this figure differs from the imaging device 10 in FIG. 2 in that a spacer 121 is disposed in place of the adhesive 120 of the imaging element 100.

[0049] The spacer 121 is disposed between the imaging chip 110 and the light-transmitting portion 130 to form a gap 122. In the imaging device 10 shown in the figure, the spacer 121 and the sealing portion 40 are configured to be in contact with each other.

[0050] As described above, the imaging device 10 according to the first embodiment of the present disclosure can configure a FOWLP in which the light receiving surface of the imaging element 100 is exposed by disposing the sealing portion 40 on the side surface of the imaging element 100. Signals can be extracted from the imaging element 100 by soldering or the like via the connection portion 30 on the back surface of the imaging device 10, which can simplify the implementation of the imaging device 10.

[0051] <2. Second Embodiment> In the imaging device 10 of the first embodiment described above, the wiring board 20 is disposed on the imaging element 100 after it has been sealed by the sealing portion 40 during the manufacturing process. In contrast, the imaging device 10 of the second embodiment of the present disclosure differs from the first embodiment described above in that the imaging element 100 is first disposed on the wiring board 20 and then sealed by the sealing portion 40.

[0052] [Method of manufacturing an imaging device] 8 to 10 are diagrams illustrating an example of a manufacturing method for an imaging device according to the second embodiment of the present disclosure. Similar to FIGS. 3 to 6, FIGS. 8 to 10 are diagrams illustrating an example of a manufacturing process for the imaging device 10. This differs from the manufacturing process in FIGS. 3 to 6 in that a wiring substrate placement process is performed before the sealing process.

[0053] First, the wiring board 20 is placed on the support substrate 90. This can be done by applying an adhesive (not shown) to the support substrate 90 and adhering the wiring board 20 to the support substrate 90 (A in FIG. 8).

[0054] Next, the imaging element 100 is placed on the wiring substrate 20. Specifically, the bumps 160 of the imaging element 100 are aligned with the wiring layer 22 of the wiring substrate 20, and the imaging element 100 is placed and bonded. This bonding can be performed, for example, by soldering. Alternatively, for example, the imaging element 100 can be heated and pressed onto the wiring substrate 20 to directly bond the metals of the wiring layer 22 and the bumps 160 together (B in FIG. 8). This step corresponds to the wiring substrate placement step.

[0055] Next, the sealing section 40 is disposed around the imaging element 100 (C in FIG. 8). This step corresponds to the sealing step.

[0056] Next, the support substrate 90 is removed, and the adhesive on the rear surface of the wiring substrate 20 is removed (D in FIG. 9).

[0057] Next, the connection portions 30 are placed on the wiring board pads 24 of the wiring board 20 by soldering (E in FIG. 9).

[0058] Next, a backgrind tape 91 is attached to the back surface of the wiring board 20 (F in FIG. 10). This backgrind tape 91 is an adhesive tape that protects bumps and the like during the manufacturing process of semiconductor elements.

[0059] Next, the sealing portion 40 is ground to expose the light-transmitting portion 130 of the imaging element 100 (G in FIG. 10). At this time, grinding the light-transmitting portion 130 together with the sealing portion 40 can also reduce the height of the imaging device 10. Thereafter, the backgrinding tape 91 is peeled off.

[0060] The imaging device 10 can be manufactured by the above manufacturing process. The sealing portion 40, which is arranged in a shape that covers the imaging element 100, is ground to expose the light-transmitting portion 130, so that the light-receiving surface of the imaging element 100 can be protected by the sealing portion 40. The manufacturing method described above requires more steps than the manufacturing methods shown in FIGS. 3 to 6. However, the number of steps is increased by the number of steps required to mount the imaging element 100, etc. on the wiring substrate 20. SemiconductorSince the semiconductor element is arranged face down, a plurality of semiconductor elements having different thicknesses can be arranged in the package.

[0061] It should be noted that the manufacturing method of the imaging device 10 is not limited to this example. For example, it is also possible to remove the support substrate 90 after grinding the sealing portion 40, without using the backgrinding tape 91, and then arrange the connecting portion 30.

[0062] Other than this, the configuration of the imaging device 10 is the same as the configuration of the imaging device 10 described in the first embodiment of the present disclosure, and therefore description thereof will be omitted.

[0063] As described above, the imaging device 10 according to the second embodiment of the present disclosure is manufactured by performing a wiring board arrangement process before the sealing process. A plurality of imaging elements and the like having different thicknesses can be housed in one package.

[0064] <3. Third Embodiment> In the imaging device 10 of the first embodiment described above, the insulating film 140 is disposed on the bottom surface of the imaging element 100. In contrast, the imaging device 10 of the third embodiment of the present disclosure differs from the first embodiment described above in that the insulating film 140 is omitted.

[0065] [Cross-sectional structure of the imaging device] 11 is a cross-sectional view showing a configuration example of an imaging device according to a third embodiment of the present disclosure. Similar to FIG. 2, this figure shows a configuration example of the imaging device 10. This differs from the imaging device 10 in FIG. 2 in that the insulating film 140 is omitted.

[0066] As described above, the insulating film 140 is not disposed on the imaging element 100 in the figure, and the sealing portion 40 is disposed between the imaging element 100 and the wiring substrate 20. When manufacturing the imaging device 10 in the figure, the sealing portion 40 is also disposed around the pads 150 and the bumps 160 in the sealing step described in C of FIG.

[0067] Other than this, the configuration of the imaging device 10 is the same as the configuration of the imaging device 10 described in the first embodiment of the present disclosure, and therefore description thereof will be omitted.

[0068] As described above, the imaging device 10 according to the third embodiment of the present disclosure can simplify the configuration of the imaging device 10 by omitting the insulating film 140.

[0069] <4. Fourth embodiment> In the imaging device 10 of the first embodiment described above, the light-transmitting portion 130 is disposed on the light-receiving surface of the imaging element 100. In contrast, the imaging device 10 of the fourth embodiment of the present disclosure differs from the first embodiment described above in that the light-transmitting portion 130 is omitted.

[0070] [Cross-sectional structure of the imaging device] 12 is a cross-sectional view showing a configuration example of an imaging device according to a fourth embodiment of the present disclosure. Similar to FIG. 2, this figure shows a configuration example of the imaging device 10. This differs from the imaging device 10 in FIG. 2 in that the light-transmitting portion 130 is omitted.

[0071] As described above, the image sensor 100 in the figure does not have the light-transmitting portion 130, and only the resin layer constituting the adhesive 120 is disposed on the light-receiving surface side of the image sensor 100. This simplifies the configuration of the image sensor 10, and allows the image sensor 10 to be made low-profile. The adhesive 120 is an example of a light-transmitting portion as defined in the claims.

[0072] Other than this, the configuration of the imaging device 10 is the same as the configuration of the imaging device 10 described in the first embodiment of the present disclosure, and therefore description thereof will be omitted.

[0073] As described above, the imaging device 10 according to the fourth embodiment of the present disclosure can simplify the configuration of the imaging device 10 by omitting the light-transmitting section 130.

[0074] <5. Fifth Embodiment> In the imaging device 10 of the first embodiment described above, only the imaging element 100 is enclosed in a package. In contrast, the imaging device 10 of the fifth embodiment of the present disclosure differs from the first embodiment described above in that a plurality of semiconductor elements are enclosed in a package.

[0075] [Cross-sectional structure of the imaging device] 13 is a cross-sectional view showing a configuration example of an imaging device according to a fifth embodiment of the present disclosure. Similar to FIG. 2, this figure shows a configuration example of the imaging device 10. This differs from the imaging device 10 in FIG. 2 in that a semiconductor element 200 is further disposed.

[0076] The semiconductor element 200 is a semiconductor element in which an electronic circuit that exchanges signals with the image sensor 100 is disposed. For example, a semiconductor element in which a processing circuit that processes image signals generated by the image sensor 100 is disposed can be used as the semiconductor element 200. Alternatively, for example, a semiconductor element in which a control circuit that generates a control signal for the image sensor 100 and supplies it to the image sensor 100 is disposed can also be used as the semiconductor element 200.

[0077] The semiconductor element 200 includes a semiconductor chip 210. Pads 250 are arranged on the bottom surface of the semiconductor chip 210. Bumps 260 are arranged on the pads 250. An insulating film 240 is arranged on the bottom surface of the semiconductor element 200. The side surfaces of the pads 250 and the bumps 260 are covered with the insulating film 240. The semiconductor element 200 is an example of a second semiconductor element as defined in the claims.

[0078] A wiring layer 25 is disposed on the wiring substrate 20. This wiring layer 25 is a wiring layer that is commonly connected to the bumps 160 of the imaging element 100 and the bumps 260 of the semiconductor element 200. Signals can be exchanged between the imaging element 100 and the semiconductor element 200 via this wiring layer 25.

[0079] In this way, by arranging the semiconductor element 200 having the processing circuitry of the image sensor 100 and the like in one package, the overall system can be made smaller.

[0080] In the imaging device 10 of the same figure, a semiconductor element 200 having a thickness different from that of the imaging element 100 is disposed, and therefore the manufacturing method described with reference to FIGS. 8 to 10 can be applied.

[0081] The configuration of the imaging device 10 is not limited to this example. For example, a configuration in which two or more semiconductor elements are arranged in a package together with the imaging element 100 may be adopted. For example, a configuration in which a semiconductor element in which a control circuit for the imaging element 100 is arranged and a semiconductor element in which a processing circuit for an image signal from the imaging element 100 is arranged may be arranged may be adopted. In this case, the sealing unit 40 seals the imaging element 100 and the multiple semiconductor elements.

[0082] Other than this, the configuration of the imaging device 10 is the same as the configuration of the imaging device 10 described in the first embodiment of the present disclosure, and therefore description thereof will be omitted.

[0083] As described above, the imaging device 10 according to the fifth embodiment of the present disclosure can further include the semiconductor element 200, thereby reducing the size of the entire system.

[0084] 6. Sixth Embodiment In the imaging device 10 of the above-described fifth embodiment, the imaging element 100 and the semiconductor element 200 are enclosed in a package. In contrast, the imaging device 10 of the sixth embodiment of the present disclosure differs from the above-described fifth embodiment in that a plurality of imaging elements are enclosed in a package.

[0085] [Cross-sectional structure of the imaging device] Fig. 14 is a cross-sectional view showing a configuration example of an imaging device according to a sixth embodiment of the present disclosure. Similar to Fig. 13, this figure shows a configuration example of the imaging device 10. This differs from the imaging device 10 of Fig. 13 in that an imaging element is disposed instead of the semiconductor element 200.

[0086] The imaging device 10 in the figure is configured as a compound-eye imaging device, with two imaging elements 100a and 100b arranged. That is, the imaging device 10 in the figure has an imaging element 100b arranged in place of the semiconductor element 200 in FIG. 13. The conventional imaging element 100 is identified by adding an "a" to its reference numeral. The imaging elements 100a and 100b are mounted on a wiring substrate 20. The wiring layer 25 in the figure is commonly connected to the bumps 160a of the imaging element 100a and the bumps 160b of the imaging element 100b. This wiring layer 25 corresponds to a signal line, such as a power supply line, that transmits a common signal to the imaging elements 100a and 100b. The imaging element 100b is an example of a second imaging element as defined in the claims.

[0087] In this way, by arranging the image pickup elements 100a and 100b in one package, the compound eye image pickup device 10 can be made smaller.

[0088] In the imaging device 10 of the figure, imaging elements 100a and 100b of the same thickness are arranged, so the manufacturing methods described with reference to FIGS. 3 to 6 and 8 to 10 can be applied.

[0089] The configuration of the imaging device 10 is not limited to this example. For example, it is also possible to adopt a configuration in which three or more imaging elements 100 are arranged in a package.

[0090] Other than this, the configuration of the imaging device 10 is the same as the configuration of the imaging device 10 described in the fifth embodiment of the present disclosure, and therefore description thereof will be omitted.

[0091] As described above, the imaging device 10 according to the sixth embodiment of the present disclosure can reduce the size of the compound eye imaging device by arranging the multiple image sensors 100a and 100b.

[0092] 7. Seventh Embodiment In the above-described embodiments, the imaging element 100 is used. In the seventh embodiment of the present disclosure, the configuration of the imaging element 100 will be described.

[0093] [Image sensor configuration] 15 is a diagram illustrating an example of the configuration of an image sensor according to an embodiment of the present disclosure. The image sensor 100 in the diagram includes a pixel array unit 101, a vertical drive unit 103, a column signal processing unit 104, and a control unit 105.

[0094] The pixel array unit 101 is configured with pixels 102 arranged in a two-dimensional lattice. Here, the pixels 102 generate image signals in response to irradiated light. The pixels 102 have photoelectric conversion units that generate charges in response to irradiated light. The pixels 102 also have pixel circuits. The pixel circuits generate image signals based on the charges generated by the photoelectric conversion units. The generation of the image signals is controlled by control signals generated by a vertical drive unit 103, which will be described later. The pixel array unit 101 has signal lines 106 and 107 arranged in an XY matrix. The signal line 106 is a signal line that transmits control signals for the pixel circuits in the pixels 102. The signal line 106 is arranged for each row of the pixel array unit 101 and is commonly wired to the pixels 102 arranged in each row. The signal line 107 is a signal line that transmits image signals generated by the pixel circuits of the pixels 102. The signal line 107 is arranged for each column of the pixel array unit 101 and is commonly wired to the pixels 102 arranged in each column. The photoelectric conversion section and the pixel circuit are formed on a semiconductor substrate.

[0095] The vertical driving unit 103 generates control signals for the pixel circuits of the pixels 102. The vertical driving unit 103 transmits the generated control signals to the pixels 102 via signal lines 106 in the same figure. The column signal processing unit 104 processes image signals generated by the pixels 102. The column signal processing unit 104 processes image signals transmitted from the pixels 102 via signal lines 107 in the same figure. The processing in the column signal processing unit 104 corresponds to, for example, analog-to-digital conversion, which converts analog image signals generated in the pixels 102 into digital image signals. The image signals processed by the column signal processing unit 104 are output as image signals for the image sensor 100. The control unit 105 controls the entire image sensor 100. The control unit 105 controls the image sensor 100 by generating and outputting control signals that control the vertical driving unit 103 and the column signal processing unit 104. The control signals generated by the control unit 105 are transmitted to the vertical drive unit 103 and the column signal processing unit 104 via signal lines 108 and 109, respectively.

[0096] <8. Camera application example> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the present technology may be realized as an imaging element mounted in an imaging device such as a camera.

[0097] 16 is a block diagram showing a schematic configuration example of a camera, which is an example of an imaging device to which the present technology can be applied. The camera 1000 in the figure includes a lens 1001, an imaging element 1002, an imaging control unit 1003, a lens driving unit 1004, an image processing unit 1005, an operation input unit 1006, a frame memory 1007, a display unit 1008, and a recording unit 1009.

[0098] A lens 1001 is a photographing lens of the camera 1000. This lens 1001 collects light from a subject and causes it to enter an image sensor 1002 (described later) to form an image of the subject.

[0099] The image sensor 1002 is a semiconductor device that captures an image of light from a subject that is collected by the lens 1001. The image sensor 1002 generates an analog image signal according to the irradiated light, converts it into a digital image signal, and outputs it.

[0100] The imaging control unit 1003 controls imaging by the imaging element 1002. The imaging control unit 1003 controls the imaging element 1002 by generating a control signal and outputting it to the imaging element 1002. The imaging control unit 1003 can also perform autofocus in the camera 1000 based on an image signal output from the imaging element 1002. Here, autofocus refers to a system that detects and automatically adjusts the focal position of the lens 1001. This autofocus can be performed using a method (image plane phase difference autofocus) in which an image plane phase difference is detected using phase difference pixels arranged in the imaging element 1002 to detect the focal position. Alternatively, a method (contrast autofocus) can be used in which the position at which the image contrast is highest is detected as the focal position. The imaging control unit 1003 adjusts the position of the lens 1001 via the lens driving unit 1004 based on the detected focal position, thereby performing autofocus. The imaging control unit 1003 can be configured, for example, by a DSP (Digital Signal Processor) equipped with firmware.

[0101] The lens driving unit 1004 drives the lens 1001 under the control of the imaging control unit 1003. The lens driving unit 1004 can drive the lens 1001 by changing the position of the lens 1001 using a built-in motor.

[0102] The image processing unit 1005 processes the image signal generated by the image sensor 1002. This processing includes, for example, demosaicing to generate image signals for missing colors among the image signals corresponding to red, green, and blue for each pixel, noise reduction to remove noise from the image signal, and encoding of the image signal. The image processing unit 1005 can be configured, for example, by a microcomputer equipped with firmware.

[0103] The operation input unit 1006 accepts operation input from the user of the camera 1000. For example, a push button or a touch panel can be used for this operation input unit 1006. The operation input accepted by the operation input unit 1006 is transmitted to the imaging control unit 1003 and the image processing unit 1005. Thereafter, processing according to the operation input, such as processing for capturing an image of a subject, is started.

[0104] The frame memory 1007 is a memory that stores frames, which are image signals for one screen. The frame memory 1007 is controlled by the image processing unit 1005 and holds frames during the image processing process.

[0105] The display unit 1008 displays the image processed by the image processing unit 1005. For this display unit 1008, for example, a liquid crystal panel can be used.

[0106] The recording unit 1009 records the images processed by the image processing unit 1005. For this recording unit 1009, for example, a memory card or a hard disk can be used.

[0107] The above has described cameras to which the present disclosure can be applied. Of the configurations described above, the present technology can be applied to the image sensor 1002. Specifically, the image sensor 10 described in FIG. 1 can be applied to the image sensor 1002. By applying the image sensor 10 to the image sensor 1002, the camera 1000 can be made smaller.

[0108] Finally, the above-described embodiments are merely examples of the present disclosure, and the present disclosure is not limited to the above-described embodiments. Therefore, even if the embodiments are different from those described above, various modifications can be made depending on the design, etc., as long as they do not deviate from the technical concept of the present disclosure.

[0109] Furthermore, the effects described in this specification are merely examples and are not intended to be limiting. Other effects may also be present.

[0110] The drawings in the above-described embodiments are schematic, and the dimensional ratios of the various parts do not necessarily correspond to the actual ones. Furthermore, the drawings may include parts with different dimensional relationships and ratios.

[0111] The present technology can also be configured as follows. (1) An imaging chip having a light-transmitting section that transmits incident light and generates an image signal based on the incident light that has passed through the light-transmitting section; and a pad that is disposed on a bottom surface of the imaging chip, which is a surface different from the surface on which the light-transmitting section is disposed, and that transmits the generated image signal. An imaging element; a wiring board on which the imaging element is disposed, the wiring board including wiring connected to the pads and extending to an area outside the imaging element; a sealing portion disposed adjacent to a side surface of the imaging element that is adjacent to a bottom surface of the imaging element and sealing the imaging element; An imaging device comprising: (2) The imaging element further includes a protrusion disposed on the pad, The wiring board includes the wiring connected to the pad via the protrusion. The imaging device according to (1) above. (3) The imaging device according to (1) or (2), wherein the imaging element further includes an insulating film disposed on the bottom surface of the imaging chip. (4) The imaging device according to (1), wherein the wiring substrate has the imaging element sealed by the sealing portion disposed thereon. (5) The imaging device according to (1), wherein the sealing portion seals the imaging element disposed on the wiring board. (6) The imaging device according to any one of (1) to (5), further comprising a connection portion disposed on a rear surface of the wiring board, which is a surface different from the front surface, and connected to the wiring. (7) Further comprising a second semiconductor element disposed on the wiring board; The sealing portion further seals the side surface of the second semiconductor element. The imaging device according to any one of (1) to (6) above. (8) The imaging device according to (7), wherein the second semiconductor element includes a processing circuit that processes the output image signal. (9) The imaging device according to (7), wherein the second semiconductor element is a second imaging element. (10) A plurality of the second semiconductor elements are disposed on the wiring substrate; The sealing portion further seals the side surfaces of the plurality of second semiconductor elements. The imaging device according to (7) above. (11) The imaging device according to any one of (1) to (10), wherein the light-transmitting portion is made of glass. (12) The imaging device according to any one of (1) to (10), wherein the light-transmitting portion is made of resin. (13) a wiring board arrangement step of arranging an imaging chip having a light-transmitting portion that transmits incident light and generates an image signal based on the incident light that has passed through the light-transmitting portion, and an imaging element having pads that are arranged on a bottom surface of the imaging chip, which is a surface different from the surface on which the light-transmitting portion is arranged, and that transmit the generated image signal, on a surface of a wiring board having wiring that is connected to the pads and extends to an area outside the imaging element; a sealing step of disposing a sealing member on a side surface of the imaging element that is adjacent to the bottom surface; A method for manufacturing an imaging device comprising: [Explanation of symbols]

[0112] 10. Imaging device 20 Wiring board 21 Insulating layer 22, 25 wiring layers 23 Beer 24 wiring board pads 30 Connection 40 Sealing part 100, 100a, 100b image sensor 101 Pixel array section 102 pixels 103 Vertical drive unit 104 Column signal processing section 105 Control Unit 110 Imaging chip 111 On-chip lens 120 Adhesive 121 Spacer 122 void 130 Translucent part 140, 240 insulating film 150, 250 pads 160, 160a, 160b, 260 bump 200 Semiconductor elements 210 Semiconductor Chips 1000 Cameras

Claims

1. an imaging element including an imaging chip in which a light-transmitting portion that transmits incident light is disposed and which generates an image signal based on the incident light that has passed through the light-transmitting portion, and a pad disposed on a bottom surface of the imaging chip, which is a surface different from the surface on which the light-transmitting portion is disposed, and which transmits the generated image signal; a wiring board having an overall flat surface, the wiring board including a wiring layer connected to the pads and extending to an area outside the imaging element, and an insulating layer forming the surface together with the wiring layer, the wiring board having the imaging element disposed on the surface; a sealing portion disposed adjacent to a side surface of the imaging element that is adjacent to the bottom surface of the imaging element and sealing the imaging element; the imaging element includes an insulating film made of resin or an inorganic material, the insulating film being disposed between a bottom surface of the imaging chip and the surface of the wiring substrate, covering the pads and constituting the side surface of the imaging element together with a side surface of the imaging chip; the wiring board has a portion on the surface that forms an outer region extending outside an area where the imaging element is disposed, The sealing portion covers the side surface of the imaging element and the outer region of the surface of the wiring substrate. Imaging device.

2. a wiring board arrangement step of arranging an imaging element, the imaging element including an imaging chip having a light-transmitting portion that transmits incident light and generating an image signal based on the incident light that has passed through the light-transmitting portion, and pads that are arranged on a bottom surface of the imaging chip, which is a surface different from the surface on which the light-transmitting portion is arranged, on the surface of a wiring board having an overall flat surface, the wiring board including a wiring layer that is connected to the pads and extends to an area outside the imaging element, and an insulating layer that forms the surface together with the wiring layer; a sealing step of disposing a sealing portion on a side surface of the imaging element that is adjacent to the bottom surface of the imaging element, the imaging element includes an insulating film that is disposed between a bottom surface of the imaging chip and the surface of the wiring substrate, covers the pads, and forms the side surface of the imaging element together with a side surface of the imaging chip, and is made of a resin or an inorganic material; the wiring board has a portion on the surface that forms an outer region extending outside an area where the imaging element is disposed, In the sealing step, the sealing portion is formed so as to cover the side surface of the imaging element and the outer region of the surface of the wiring substrate. A method for manufacturing an imaging device.

Images