Semiconductor manufacturing equipment member, plug, and plug manufacturing method

Abstract

To enable a gas flow path to be manufactured as designed, and to ensure a sufficient gas flow rate while suppressing arc discharge in the gas flow path.SOLUTION: A semiconductor manufacturing device component 10 includes a ceramic plate 20 having a wafer placement portion 21 on the upper surface, and a plug 50 that is installed in a plug installation hole 24 that penetrates the ceramic plate 20 in the vertical direction and allows gas to flow. The plug 50 includes a gas flow path 54 inside the plug body 52, which is configured by combining multiple linear flow paths such that the linear flow paths intersect. The gas flow path 54 includes multiple openings on the upper and lower surfaces of the plug body 52.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a member for a semiconductor manufacturing apparatus, a plug, and a method for manufacturing the plug. [Background technology]

[0002] Conventionally, semiconductor manufacturing equipment components include electrostatic chucks with a wafer mounting portion on the upper surface. For example, Patent Document 1 discloses an electrostatic chuck comprising a ceramic plate for adsorbing and holding a wafer, a through-hole formed in the ceramic plate, a porous plug disposed in the through-hole, and a conductive cooling plate bonded to the underside of the ceramic plate. When processing a wafer mounted on the wafer mounting portion with plasma, high-frequency power is applied between the cooling plate and a flat electrode disposed above the wafer to generate plasma above the wafer. At the same time, to improve thermal conduction between the wafer and the ceramic plate, helium, a thermally conductive gas, is supplied to the backside of the wafer through the porous plug. The thermally conductive gas passes through the numerous pores present within the porous plug. Therefore, the numerous pores in the porous plug serve as gas flow paths. Meanwhile, Patent Document 2 discloses a semiconductor manufacturing equipment component utilizing a plug with a spiral gas flow path within its dense plug body. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-29384 [Patent Document 2] Patent No. 7144603 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in Patent Document 1, the numerous pores (i.e., gaps between particles) in the porous plug are used as gas flow paths, making it difficult to fabricate the gas flow paths as designed. This results in different gas flow paths for each porous plug, resulting in a problem of inconsistent quality. On the other hand, in Patent Document 2, a single spiral gas flow path is used, making it possible to fabricate the gas flow paths as designed, but narrowing the gas flow path can sometimes result in insufficient gas flow rate. Furthermore, widening the gas flow path can achieve sufficient gas flow rate, but arc discharge can occur in the gas flow path when plasma is generated, which can degrade wafer quality.

[0005] The present invention has been made to solve these problems, and its main object is to enable the gas flow path to be manufactured as designed and to ensure a sufficient gas flow rate while suppressing arc discharge within the gas flow path. [Means for solving the problem]

[0006] [1] The semiconductor manufacturing equipment member of the present invention is a ceramic plate having a wafer placement portion on its upper surface; a plug that is installed in a plug installation hole that penetrates the ceramic plate in the vertical direction and allows gas to flow; Equipped with the plug has a gas flow path formed by combining a plurality of linear flow paths so as to intersect inside a plug body, The gas flow passage has a plurality of openings on the upper and lower surfaces of the plug body. It is something.

[0007] In this semiconductor manufacturing equipment component, the plug has a gas flow path inside the plug body, which is configured by combining multiple linear flow paths so that they intersect, and the gas flow path has multiple openings on the upper and lower surfaces of the plug body. Here, the gas flow path is not configured by pores, but by combining multiple linear flow paths so that they intersect. Therefore, the gas flow path can be manufactured as designed. Furthermore, by making the linear flow paths narrower, arc discharge within the gas flow path can be suppressed. Furthermore, even if the linear flow paths are narrow, a sufficient gas flow rate can be ensured by increasing the number of linear flow paths and their openings.

[0008] Although the present invention is sometimes described using terms such as up / down, left / right, front / back, etc., these terms merely refer to relative positional relationships. Therefore, when the orientation of a semiconductor manufacturing equipment component is changed, up / down may become left / right, or left / right may become up / down, and such cases are also within the technical scope of the present invention.

[0009] [2] In the semiconductor manufacturing equipment member (the semiconductor manufacturing equipment member described in [1] above), the maximum length of the gas flow path in the vertical direction may be 0.5 mm or less. This makes it possible to sufficiently suppress arc discharge in the gas flow path.

[0010] [3] In the semiconductor manufacturing equipment member described above (the semiconductor manufacturing equipment member described in [1] or [2] above), the gas flow path may be configured by combining a plurality of linear flow paths extending linearly in the left-right, front-rear, and up-down directions so that the linear flow paths intersect at right angles. This makes it possible to design the gas flow path relatively easily.

[0011] [4] In the semiconductor manufacturing equipment component described above (the semiconductor manufacturing equipment component described in [1] or [2] above), the gas flow path may be configured by combining a plurality of linear flow paths extending linearly in an oblique direction so as to intersect, or by combining a plurality of linear flow paths extending linearly in both an oblique direction and a horizontal direction so as to intersect. In this way, the gas flow path can be designed relatively easily.

[0012] [5] In the semiconductor manufacturing equipment member described above (the semiconductor manufacturing equipment member described in any one of [1] to [4] above), the plug body may be made of dense ceramic, and the gas flow path may not have an opening on the side surface of the plug body. This prevents the adhesive from seeping into the plug when bonding the outer circumferential surface of the plug to the inner circumferential surface of the plug setting hole with the adhesive. This prevents voids from occurring in the adhesive layer bonding the outer circumferential surface of the plug to the inner circumferential surface of the plug setting hole.

[0013] [6] The plug of the present invention is The plug body and a gas flow path formed inside the plug body by combining a plurality of linear flow paths so as to intersect with each other; The plug in the gas flow path Main unit a plurality of openings opening on the upper and lower surfaces of the It is equipped with the following.

[0014] This plug can be used as a plug for the above-mentioned semiconductor manufacturing equipment member.

[0015] [7] The method for producing a plug of the present invention comprises: A method for producing the above-mentioned plug (the plug described in [6] above), (a) a step of preparing a molding die from an organic material, the molding die having a molding space with the same shape as the molded body that is a precursor of the plug and having integrated therewith a core corresponding to the gas flow path; (b) injecting a ceramic slurry into the molding cavity of the mold and solidifying it to produce the green body in the mold; (c) removing the molding die from the integrated body formed by integrating the molding die and the molded body to obtain the molded body; (d) firing the compact to obtain the plug; It includes:

[0016] This makes it possible to easily and accurately manufacture a plug having a gas flow path formed by combining a plurality of linear flow paths so as to intersect inside the plug body.

[0017] In step (a), the mold is produced using a 3D printer. The model material may be a material that is insoluble in the prescribed cleaning fluid and the components contained in the ceramic slurry after hardening, and the support material may be a material that is soluble in the prescribed cleaning fluid after hardening. In this specification, "insoluble" includes not only completely insoluble materials but also materials that are soluble enough to maintain the desired shape. This allows for relatively easy production of a mold with an integrated core, and eliminates the risk of the mold being dissolved by components contained in the ceramic slurry to the extent that it is unable to maintain its shape.

[0018] In step (b), a ceramic slurry containing a ceramic powder and a gelling agent may be used, and the ceramic slurry may be poured into a mold and then gelled by a chemical reaction of the gelling agent to produce a green body in the mold. In this way, the ceramic slurry fills the molding cavity of the mold integrated with the core without any gaps, so that the green body precisely matches the shape of the molding cavity.

[0019] The method for eliminating the mold in step (c) is not particularly limited, and for example, the mold may be eliminated by melting and removing it, or by chemical decomposition (including, for example, thermal decomposition). [Brief explanation of the drawings]

[0020] [Figure 1] FIG. 2 is a longitudinal cross-sectional view of a semiconductor manufacturing equipment member 10. [Figure 2] FIG. [Figure 3] FIG. [Figure 4] FIG. [Figure 5] Cross section AA of Figure 3. [Figure 6] FIG. [Figure 7] FIG. [Figure 8] FIG. 10 is a cross-sectional view showing a modified example of the plug 50. [Figure 9] FIG. [Figure 10] FIG. DETAILED DESCRIPTION OF THE INVENTION

[0021] Next, preferred embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a vertical cross-sectional view of a semiconductor manufacturing equipment member 10, Fig. 2 is a plan view of a ceramic plate 20, Fig. 3 is a perspective view of a plug 50, Fig. 4 is a reference perspective view of the plug 50 (the gas flow path 54 should be shown by a hidden line (dotted line) but is shown by a solid line for convenience), and Fig. 5 is a cross-sectional view taken along the line AA in Fig. 3.

[0022] The semiconductor manufacturing equipment member 10 includes a ceramic plate 20, a cooling plate 30, a bonding layer 40, a plug 50, and an insulating tube 60.

[0023] The ceramic plate 20 is a circular plate (e.g., 300 mm in diameter and 5 mm in thickness) made of ceramic such as sintered alumina or sintered aluminum nitride. The ceramic plate 20 incorporates an electrode 22. As shown in FIG. 2, a seal band 21a is formed along the outer edge of the wafer placement portion 21 of the ceramic plate 20, and a plurality of small circular protrusions 21b are formed on the entire surface. The seal band 21a and the small circular protrusions 21b have the same height, e.g., several μm to several tens of μm. The electrode 22 is a flat mesh electrode used as an electrostatic electrode, to which a DC voltage can be applied. When a DC voltage is applied to the electrode 22, the wafer W is attracted and fixed to the wafer placement portion 21 (specifically, the upper surfaces of the seal band 21a and the small circular protrusions 21b) by electrostatic attraction. When the DC voltage is released, the wafer W is released from the attraction and fixation to the wafer placement portion 21. The portion of the wafer placement portion 21 where the seal band 21a and the small circular protrusions 21b are not provided is referred to as a reference surface 21c.

[0024] The plug installation holes 24 are cylindrical through-holes that penetrate the ceramic plate 20 in the vertical direction. The plug installation holes 24 are provided at multiple locations on the ceramic plate 20 (for example, at multiple locations equally spaced along the circumferential direction as shown in FIG. 2). Plugs 50, which will be described later, are installed in the plug installation holes 24.

[0025] The cooling plate 30 is bonded to the underside of the ceramic plate 20. The cooling plate 30 is a circular plate with good thermal conductivity (a circular plate with the same diameter as or larger than the ceramic plate 20). The cooling plate 30 has a refrigerant flow path 32 through which a refrigerant circulates and a gas hole 34 through which gas is supplied to the plug 50. The refrigerant is preferably a liquid and is preferably electrically insulating. Examples of electrically insulating liquids include fluorine-based inert liquids. The refrigerant flow path 32 is formed in a single stroke from the inlet to the outlet across the entire surface of the cooling plate 30 in a plan view. The gas hole 34 is a cylindrical hole and is located opposite the plug installation hole 24. Examples of materials for the cooling plate 30 include metal materials and composite materials of metal and ceramic. Examples of metal materials include Al, Ti, Mo, and alloys thereof. Examples of composite materials of metal and ceramic include metal matrix composites (MMCs) and ceramic matrix composites (CMCs). Specific examples of such composite materials include materials containing Si, SiC, and Ti, materials in which porous SiC is impregnated with Al and / or Si, and composite materials of Al2O3 and TiC. Materials containing Si, SiC, and Ti are called SiSiCTi, materials in which porous SiC is impregnated with Al are called AlSiC, and materials in which porous SiC is impregnated with Si are called SiSiC. It is preferable to select a material for the cooling plate 30 that has a thermal expansion coefficient close to that of the material for the ceramic plate 20. The cooling plate 30 also serves as an RF electrode. Specifically, an upper electrode (not shown) is disposed above the wafer placement portion 21, and plasma is generated when high-frequency power is applied between the parallel plate electrodes consisting of the upper electrode and the cooling plate 30.

[0026] The bonding layer 40 bonds the lower surface of the ceramic plate 20 to the upper surface of the cooling plate 30. The bonding layer 40 may be, for example, a layer formed of solder or a metal brazing material. The bonding layer 40 is formed, for example, by TCB (thermal compression bonding). TCB is a known method in which a metal bonding material is sandwiched between two components to be bonded, and the two components are pressure-bonded while heated to a temperature below the solidus temperature of the metal bonding material. The bonding layer 40 may be an organic bonding layer (resin bonding layer). The organic resin layer is formed, for example, by curing an organic adhesive. The bonding layer 40 has a round hole 42 that penetrates the bonding layer 40 in the vertical direction at a position opposite the gas hole 34.

[0027] The plug 50 includes a plug body 52 made of dense ceramic and a gas flow path 54 disposed within the plug body 52. ​​The plug 50 is disposed in the plug installation hole 24. The outer peripheral surface of the plug 50 is bonded to the inner peripheral surface of the plug installation hole 24 via an adhesive layer 26. The adhesive layer 26 may be an organic adhesive layer (resin adhesive layer) or an inorganic adhesive layer. The plug body 52 may be formed of the same ceramic material as the ceramic plate 20, for example. The gas flow path 54 allows gas to flow and is formed by a combination of multiple linear flow paths 54a, 54b, and 54c arranged in an intersecting manner within the plug body 52. ​​The gas flow path 54 has multiple openings 54p and 54q on the upper and lower surfaces of the plug body 52, respectively, but does not have any openings on the outer peripheral surface (side surface) of the plug body 52. ​​The maximum vertical length Hmax of the gas flow path 54 (see the partially enlarged view in FIG. 5) is preferably 0.5 mm or less.

[0028] In this embodiment, the gas flow path 54 is configured in a lattice shape by orthogonally combining multiple linear flow paths 54a, 54b, and 54c extending linearly in the left-right, front-rear, and up-down directions. Specifically, in a certain horizontal plane, multiple linear flow paths 54a extending linearly in the left-right direction are arranged at equal intervals in the front-rear direction, and multiple linear flow paths 54b extending linearly in the front-rear direction are arranged at equal intervals in the left-rear direction so as to be perpendicular to the linear flow paths 54a. Intersections between the linear flow paths 54a and the linear flow paths 54b form gas branch paths. Multiple such horizontal planes are arranged at equal intervals in the up-down direction. Note that the intervals at which the linear flow paths 54a and 54b are arranged are not limited to equal intervals and may be random, for example. Furthermore, the upper linear flow paths 54a and 54b and the lower linear flow paths 54a and 54b of two vertically adjacent horizontal planes are connected by multiple linear flow paths 54c extending linearly in the up-down direction. These connection points also form gas branch paths. The plurality of linear flow paths 54c extending in the vertical direction are not arranged in a straight line in the vertical direction when the plug 50 is viewed as a whole, but are arranged in a staggered manner.

[0029] The insulating tube 60 is a tube made of dense ceramic and circular in plan view. The outer circumferential surface of the insulating tube 60 is bonded to the inner circumferential surfaces of the circular holes 42 in the bonding layer 40 and the inner circumferential surfaces of the gas holes 34 in the cooling plate 30 via an adhesive layer (not shown). The adhesive layer may be an organic adhesive layer (resin adhesive layer) or an inorganic adhesive layer. An adhesive layer may also be provided between the upper surface of the insulating tube 60 and the lower surface of the ceramic plate 20. The interior of the insulating tube 60 is in communication with the plug 50. Therefore, when gas is introduced into the insulating tube 60, the gas passes through the plug 50 and is supplied to the backside of the wafer W.

[0030] Next, an example of how the semiconductor manufacturing equipment component 10 configured as described above is described. First, with the semiconductor manufacturing equipment component 10 installed in a chamber (not shown), a wafer W is placed on the wafer placement portion 21. The chamber is then depressurized using a vacuum pump to a predetermined vacuum level, and a DC voltage is applied to the electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer placement portion 21 (specifically, the upper surface of the seal band 21a or the upper surface of the small circular protrusions 21b). Next, a reactive gas atmosphere at a predetermined pressure (e.g., several tens to several hundreds of Pa) is created in the chamber. In this state, a high-frequency voltage is applied between an upper electrode (not shown) installed in the ceiling of the chamber and the cooling plate 30 of the semiconductor manufacturing equipment component 10 to generate plasma. The surface of the wafer W is treated with the generated plasma. A coolant circulates through the coolant flow path 32 of the cooling plate 30. A backside gas is introduced through the gas hole 34 from a gas cylinder (not shown). A thermally conductive gas (e.g., helium) is used as the backside gas. The backside gas is supplied and sealed in the space between the back surface of the wafer W and the reference surface 21c of the wafer mounting portion 21 through the insulating tube 60 and the plug 50. The presence of this backside gas allows efficient heat conduction between the wafer W and the ceramic plate 20.

[0031] Next, a manufacturing example of the plug 50 will be described. The plug 50 is manufactured by performing steps (a) to (d) in this order. A compact 80 shown in FIG. 6 becomes the plug 50 after sintering, and the dimensions of the compact 80 are determined based on the dimensions of the plug 50, taking into consideration that the compact 80 will be sintered during sintering. The compact 80 has a hollow portion 84 inside a compact body 82, which will become a gas flow path 54 after sintering. The hollow portion 84 is open to the top and bottom surfaces of the compact body 82.

[0032] ·Process (a) In step (a), a molding die 70 is prepared. As shown in FIG. 7, the molding die 70 includes a cylindrical molding die body 72 with a bottom and a core 74 that corresponds to the hollow portion 84 of the molded body 80. The molding die 70 has a molding space 71 of the same shape as the molded body 80. The molding space 71 is the cylindrical space inside the molding die body 72 excluding the core 74. The lower end of the core 74 is integrated with the bottom surface of the molding die body 72. The upper end of the core 74 is a free end. The molding die 70 is prepared using a well-known 3D printer. 3D printers create structures by repeating a series of operations: ejecting a pre-hardening fluid from a head unit toward a stage to form a pre-hardening layered material, and then hardening the pre-hardening layered material. The 3D printer includes, as pre-hardening fluids, a model material, which is a material that will ultimately form the required portion of the molding die 70, and a support material, which is a base material that supports the model material and forms the portion of the molding die 70 that will ultimately be removed. Here, the model material is a material (e.g., wax such as paraffin wax) that is insoluble in a predetermined cleaning liquid (e.g., water, organic solvent, acid, alkaline solution, etc.) and in the components contained in the ceramic slurry (described below) after hardening. The support material is a material (e.g., hydroxylated wax) that is soluble in a predetermined cleaning liquid after hardening. One example of the predetermined cleaning liquid is isopropyl alcohol. The 3D printer creates a structure using slice data obtained by slicing the mold 70 horizontally into layers at predetermined intervals from bottom to top. The slice data is created by processing CAD data. Some slice data contain a mixture of model material and support material, while other slice data contains only the model material. The structure created by the 3D printer is immersed in isopropyl alcohol to dissolve and remove the hardened support material, resulting in an object consisting only of the hardened model material, i.e., the mold 70.

[0033] ·Process (b) In step (b), a green body 80 is produced in a forming die 70. Here, the green body 80 is produced by mold casting. In mold casting, a ceramic slurry containing ceramic powder, a solvent, a dispersant, and a gelling agent is poured into a forming space 71 of the forming die 70, and the gelling agent is chemically reacted to gel the ceramic slurry, thereby producing the green body 80 in the forming die 70. Mold casting can be performed in accordance with the content described in Patent Document 2.

[0034] ·Process (c) In step (c), molding die 70 is removed from the integrated body formed by integrating molding die 70 and molded body 80, thereby obtaining molded body 80. If a material having a melting point below the drying temperature of molded body 80 (the upper limit temperature if the melting point is expressed as a temperature range) is used as the material for molding die 70, molding die 70 can be melted and removed at the drying temperature when drying molded body 80. For example, if wax that melts at 70°C is used as the material for molding die 70, molding die 70 can be melted and removed when drying molded body 80 at 80°C, thereby obtaining molded body 80.

[0035] ·Process (d) In step (d), the compact 80 is degreased and then fired to produce the plug 50. The degreasing temperature and firing temperature (maximum temperature) may be set appropriately taking into consideration the temperature at which the ceramic powder contained in the compact 80 is sintered. The degreasing atmosphere and firing atmosphere may be appropriately selected from air, inert gas, vacuum, hydrogen, etc.

[0036] In the semiconductor manufacturing equipment component 10 described above, the plug 50 includes a gas flow path 54 formed inside the plug body 52 by combining multiple linear flow paths 54a, 54b, and 54c in an intersecting manner. The gas flow path 54 has multiple openings 54p and 54q on the upper and lower surfaces of the plug 50. The gas flow path 54 is not formed by pores but by combining multiple linear flow paths 54a, 54b, and 54c in an intersecting manner. This allows the gas flow path 54 to be manufactured as designed, resulting in consistent quality of the plug 50. Furthermore, narrowing the linear flow paths 54a, 54b, and 54c can suppress arc discharge within the gas flow path 54. Furthermore, even if the linear flow paths 54a, 54b, and 54c are narrow, a sufficient gas flow rate can be ensured by increasing the number of linear flow paths 54a, 54b, and 54c or the number of openings 54p and 54q. Additionally, the length of the gas flow path 54 can be increased sufficiently, thereby increasing the withstand voltage of the plug 50.

[0037] Furthermore, the maximum vertical length Hmax of the gas flow path 54 is preferably 0.5 mm or less. This makes it possible to sufficiently suppress arc discharge within the gas flow path 54. When the thermal conduction gas is helium, arc discharge is thought to occur when electrons generated as a result of the ionization of helium supplied from the gas hole 34 to the plug 50 during plasma generation accelerate and collide with other helium. If the maximum vertical length Hmax of the gas flow path 54 is 0.5 mm or less, the electrons collide with other helium without being sufficiently accelerated (in other words, with insufficient energy), thereby preventing arc discharge. To further enhance the arc discharge prevention effect, it is preferable to set the maximum length Hmax to 0.3 mm or less.

[0038] Furthermore, the gas flow path 54 is configured by combining multiple linear flow paths 54a, 54b, 54c that extend linearly in the up-down, left-right, and front-back directions so that they intersect at right angles, making it relatively easy to design the gas flow path 54.

[0039] Furthermore, the plug body 52 is made of dense ceramic, and the gas flow path 54 does not have any openings on the outer peripheral surface (side surface) of the plug body 52. ​​Therefore, when the outer peripheral surface of the plug body 52 and the inner peripheral surface of the plug installation hole 24 are bonded with an adhesive, the adhesive does not penetrate into the plug body 52. ​​This prevents voids from forming in the adhesive layer 26 that bonds the outer peripheral surface of the plug body 52 and the inner peripheral surface of the plug installation hole 24. Such voids are undesirable because they can cause arcing. Furthermore, the plug body 52 is not porous, so it is not susceptible to particle shedding.

[0040] Furthermore, the method for manufacturing the plug 50 includes the above-described steps (a) to (d). Therefore, it is possible to easily and accurately manufacture the plug 50 having, inside the plug body 52, the gas flow path 54 configured by combining a plurality of linear flow paths 54a, 54b, 54c so as to intersect with each other.

[0041] The present invention is not limited to the above-described embodiment, and the technical scope of the present invention is not limited to the above-described embodiment. It goes without saying that the present invention can be implemented in various ways within the scope of the present invention.

[0042] Although the above-described embodiment employs a plug 50 having a gas flow path 54, the present invention is not limited thereto. For example, modified plugs 50 as shown in FIGS. 8A to 8C may be employed. In FIGS. 8A to 8C, the same components as those in the above-described embodiment are denoted by the same reference numerals. In the plug 50 of FIG. 8A, linear flow paths 54a and 54b constituting the gas flow path 54 extend horizontally and open on the outer peripheral surface (side surface) of the plug body 52. ​​Note that only one of the linear flow paths 54a and 54b may extend horizontally and open on the outer peripheral surface of the plug body 52. ​​In the plug 50 shown in FIG. 8B, the gas flow path 54 is formed by providing linear flow paths 54a, 54b, and 54c in a lattice pattern over the entire plug body 52. ​​In the plug 50 shown in FIG. 8C, a plurality of gas flow paths 54 are provided in the plug body 52.

[0043] Alternatively, a plug 150 shown in FIG. 9 may be employed instead of the plug 50 of the above-described embodiment. FIG. 9 is a reference perspective view of the plug 150 (the gas flow passage 154 should normally be shown by hidden lines (dotted lines), but for convenience, it is shown by solid lines). The plug 150 has a gas flow passage 154 inside a dense plug body 152. The gas flow passage 154 is configured in a lattice shape by combining a plurality of linear flow passages 154a, 154b, 154c, and 154d that extend linearly in oblique directions so as to intersect with each other, and the plug body 152 has a plurality of openings on each of its upper and lower surfaces. The linear flow path 154a is formed to be inclined to the left at a predetermined angle (e.g., 45° or 60°) with respect to the horizontal plane, the linear flow path 154b is formed to be inclined to the right at a predetermined angle with respect to the horizontal plane, the linear flow path 154c is formed to be inclined to the front at a predetermined angle with respect to the horizontal plane, and the linear flow path 154d is formed to be inclined to the rear at a predetermined angle with respect to the horizontal plane. Such gas flow paths 154 can be designed relatively easily and can be manufactured relatively easily using the above-mentioned steps (a) to (d). The maximum vertical length Hmax of the gas flow path 154 is the height of the intersection of the linear flow paths 154a extending in the diagonal direction, as shown in the enlarged partial view of FIG. 9 . This Hmax is also preferably 0.5 mm or less, and more preferably 0.3 mm or less. This configuration can adequately suppress arc discharge within the gas flow path 154.

[0044] Alternatively, a plug 250 shown in FIG. 10 may be employed instead of the plug 50 of the above-described embodiment. FIG. 10 is a reference perspective view of the plug 250 (the gas flow passages 254 should be shown by hidden lines (dotted lines), but are shown by solid lines for convenience). The plug 250 has a gas flow passage 254 inside a dense plug body 252. The gas flow passage 254 is configured in a lattice pattern by combining multiple linear flow passages 254a and 254b extending linearly in an oblique direction and multiple linear flow passages 254c extending linearly in the horizontal direction, and has multiple openings on each of the upper and lower surfaces of the plug body 252. The linear flow passage 254a is formed so as to be inclined at a predetermined angle to the right with respect to the horizontal plane, and the linear flow passage 254b is formed so as to be inclined at a predetermined angle to the left with respect to the horizontal plane. The linear flow passages 254a and the linear flow passages 254b are arranged parallel to each other and alternately spaced apart in the front-to-rear direction. The linear flow path 254c is formed horizontally in the front-rear direction and intersects with the linear flow paths 254a, 254b that are alternately arranged. Such a gas flow path 254 can also be designed relatively easily. Furthermore, it can be manufactured relatively easily by the above-mentioned steps (a) to (d). The maximum length Hmax of the gas flow path 254 in the up-down direction is also preferably 0.5 mm or less, and more preferably 0.3 mm or less. In this way, the gas flow path 254 Arc discharge within the heater can be sufficiently suppressed.

[0045] In the above-described embodiment, the linear flow paths 54a, 54b, and 54c extending linearly in a predetermined direction (i.e., straight flow paths) are illustrated, but the present invention is not limited thereto. For example, the linear flow paths 54a, 54b, and 54c may be curved flow paths instead of straight flow paths.

[0046] In the above-described embodiment, the diameter of the linear flow paths 54a, 54b, 54c is preferably 0.5 mm or less. In particular, the diameter of the linear flow paths 54a, 54b, 54c is preferably 0.5 mm or less, and the maximum length Hmax in the vertical direction within the gas flow path 54 is preferably 0.5 mm or less. It is more preferable that these diameters and maximum length Hmax are 0.3 mm or less.

[0047] In the above-described embodiment, the insulating pipe 60 is provided, but the insulating pipe 60 may be omitted. Also, instead of providing the gas holes 34 in the cooling plate 30, a gas channel structure may be provided. The gas channel structure may include a ring portion that is provided inside the cooling plate 30 (above the cooling flow path 43) and is concentric with the cooling plate 30 in a plan view, an inlet portion that introduces gas from the back surface of the cooling plate 30 to the ring portion, and a distributor portion that distributes the gas from the ring portion to each plug 50. The number of inlet portions may be less than the number of distributor portions, and may be, for example, one.

[0048] In the above-described embodiment, an electrostatic electrode has been exemplified as the electrode 22 built into the ceramic plate 20, but this is not particularly limited. For example, instead of or in addition to the electrode 22, a heater electrode (resistance heating element) or an RF electrode may be built into the ceramic plate 20. [Explanation of symbols]

[0049] 10 semiconductor manufacturing equipment member, 20 ceramic plate, 21 wafer mounting portion, 21a seal band, 21b circular small protrusion, 21c reference surface, 22 electrode, 24 plug installation hole, 26 adhesive layer, 30 cooling plate, 32 refrigerant flow path, 34 gas hole, 40 bonding layer, 42 round hole, 50 plug, 52 plug body, 54 gas flow path, 54a, 54b, 54c linear flow path, 54p, 54q opening, 60 insulating tube, 70 molding die, 71 molding space, 72 molding die body, 74 core, 80 molding body, 82 molding body body, 84 hollow portion, 150 plug, 152 plug body, 154 gas flow path, 154a, 154b, 154c, 154d linear flow path.

Claims

1. a ceramic plate having a wafer placement portion on its upper surface; a plug that is installed in a plug installation hole that penetrates the ceramic plate in the vertical direction and allows gas to flow; Equipped with the plug has a gas flow path formed by combining a plurality of linear flow paths so as to intersect inside a plug body, The gas flow passage has a plurality of openings on the upper and lower surfaces of the plug body. Components for semiconductor manufacturing equipment.

2. The maximum length of the gas flow path in the vertical direction is 0.5 mm or less. The semiconductor manufacturing equipment member according to claim 1 .

3. The gas flow path is configured by combining a plurality of linear flow paths that extend linearly in the up-down, left-right, and front-back directions so that they intersect at right angles. The semiconductor manufacturing equipment member according to claim 1 or 2.

4. The gas flow path is configured by combining a plurality of linear flow paths that extend linearly in an oblique direction so as to intersect with each other, or by combining a plurality of linear flow paths that extend linearly in both an oblique direction and a horizontal direction so as to intersect with each other. The semiconductor manufacturing equipment member according to claim 1 or 2.

5. the plug body is made of a dense ceramic; The gas flow path does not have an opening on a side surface of the plug body. The semiconductor manufacturing equipment member according to claim 1 or 2.

6. The plug body and a gas flow path formed inside the plug body by combining a plurality of linear flow paths so as to intersect with each other; a plurality of openings in the gas flow passage that open to the upper surface and the lower surface of the plug body; Plug with.

7. 7. A method for manufacturing the plug of claim 6, comprising the steps of: (a) preparing a molding die from an organic material, the molding die having a molding space of the same shape as the molded body that is a precursor of the plug, and having integrated therewith a core corresponding to the gas flow path; (b) injecting a ceramic slurry into the molding cavity of the mold and solidifying it to produce the green body in the mold; (c) removing the molding die from the integrated body formed by integrating the molding die and the molded body to obtain the molded body; (d) firing the compact to obtain the plug; A plug manufacturing method comprising:

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