Transferred substrate and transfer device

Abstract

To provide a transfer target substrate and transfer device, which enable transfer of elements with good positioning accuracy.SOLUTION: A transfer target substrate 4b configured to allow a given element 1 to be transferred to a transfer target surface thereof is provided, where a transfer target area R designated to receive the element 1 transferred thereto on the transfer target surface is provided with communicative paths 3c in communication with the outside of the transfer target area R.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a transfer substrate and a transfer device for transferring elements such as semiconductor chips with high precision and stability. [Background technology]

[0002] Semiconductor chips are becoming smaller to reduce costs, and efforts are being made to mount these miniaturized chips with high precision. In particular, LEDs used in displays require semiconductor chips of 50um x 50um or less, known as micro LEDs, to be mounted at high speed with a precision of a few microns.

[0003] Patent Document 1 describes a method of transferring elements by laser lift-off, in which a laser beam generated from a laser light source is reflected by a galvanometer mirror and selectively irradiated onto a plurality of elements arranged on a transfer substrate, thereby transferring the elements peeled off from the transfer substrate to a destination substrate. This transfer method makes it possible to transfer minute elements onto a destination substrate at high speed, and can also be used to mount elements on a circuit board at high speed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-41500 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the transfer method described in Patent Document 1 has the risk of reducing the accuracy of the transfer position of the elements. Specifically, as shown in Fig. 11, when elements 91 fly from a transfer substrate 92 to a transferee substrate 93 by laser lift-off, the moving speed of the elements 91 reaches the speed of sound, and as indicated by pressure P0, the gas layer (air layer) between the elements 91 and the transferee substrate 93 is compressed, creating resistance to the flight of the elements 91. This resistance bends the flight direction of the elements 91, and as indicated by the two-dot chain line in Fig. 11, the elements 91 are transferred to positions on the transferee substrate 93 that are shifted in the lateral direction (the X and Y directions in Fig. 11). In other words, there is a problem in that the transfer position accuracy of the elements 91 is reduced.

[0006] In view of the above problems, an object of the present invention is to provide a transfer substrate and a transfer apparatus that can transfer elements with high positional accuracy. [Means for solving the problem]

[0007] In order to solve the above problem, the transfer substrate of the present invention is a transfer substrate onto which elements are transferred, and is characterized in that the transfer region, which is the region on the transfer surface onto which a specified element is transferred, is provided with a communication path that communicates with the outside of the transfer region.

[0008] In the transfer substrate of the present invention, a communication path is provided that connects to the outside of the transfer area, so that when the element approaches, the gas in the area sandwiched between the element and the transfer surface can escape through the communication path, thereby reducing the increase in pressure in the area sandwiched between the element and the transfer surface.

[0009] Preferably, the transfer region is formed by the tip surfaces of a plurality of arranged pillars, and the gaps between the pillars serve as the communication paths.

[0010] By doing so, it is possible to create a communication path relatively easily.

[0011] The communication path may be a recess formed in the transferred surface so as to extend across the inside and outside of the transferred area.

[0012] This allows air to escape laterally through the recess when the element approaches.

[0013] Preferably, the communication path is a hole-like flow path drilled in the transfer surface, one opening of the flow path being provided in the transfer area and the other opening being provided outside the transfer area.

[0014] This allows air to escape from the inside of the transfer area to the outside of the transfer area via this flow path when the element approaches.

[0015] It is also preferable that the elements are transferred by a process in which the elements are not in contact with anything at the moment when they are transferred to the transfer surface.

[0016] In such a transfer form, the effects of the present invention are greatly obtained.

[0017] In addition, in order to solve the above-mentioned problems, the transfer device of the present invention is a transfer device that causes ablation by applying active energy rays to a transfer substrate that holds an element, and urges the element to transfer from the transfer substrate to a transferee substrate described in any one of claims 1 to 5, and is characterized by comprising a transfer substrate holding unit that holds the transfer substrate, a transferee substrate holding unit that holds the transferee substrate so that the element-holding surface of the transfer substrate faces the transferee substrate, and an active energy ray applying unit that applies active energy rays to a portion of the transfer substrate held by the transfer substrate holding unit.

[0018] In the transfer device of the present invention, a communication path is provided in the transfer area that connects to the outside of the transfer area, so that when the element approaches, the gas in the area sandwiched between the element and the transfer surface can escape through the communication path, thereby reducing the increase in gas pressure in the area sandwiched between the element and the transfer surface due to the element approaching.

[0019] Furthermore, in order to solve the above-mentioned problems, the transfer device of the present invention is a transfer device that applies active energy rays to a transfer substrate that adhesively holds an element, thereby causing ablation and urging the element to transfer from the transfer substrate to a transferred substrate, and is equipped with a transfer substrate holding section that holds the transfer substrate, a transferred substrate holding section that holds the transferred substrate so that the element-holding surface of the transfer substrate faces the transferred substrate, and an active energy ray applying section that applies active energy rays to a portion of the transfer substrate held in the transfer substrate holding section, and is characterized in that the held surface of the element that is held by the transferred substrate is provided with a communication path that communicates with the outside of the held surface.

[0020] In the transfer device of the present invention, a communication path is provided in the element, so that when the element approaches, the gas in the area sandwiched between the element and the transfer substrate can escape through the communication path, thereby reducing the increase in pressure in the area sandwiched between the element and the transfer substrate. [Effects of the Invention]

[0021] The transfer substrate and transfer apparatus of the present invention enable elements to be transferred with high positional accuracy. [Brief explanation of the drawings]

[0022] [Figure 1] 1 is a diagram illustrating a mounting device according to the present invention. [Figure 2] FIG. 2 is a diagram illustrating a transfer unit in the mounting device according to the present invention. [Figure 3] FIG. 2 is a diagram illustrating an inspection unit in the mounting device according to the present invention. [Figure 4] 1 is a diagram illustrating a mounting unit of a mounting device according to the present invention; [Figure 5] 1A to 1C are diagrams illustrating a transfer process performed by the transfer device of the present invention. [Figure 6] FIG. 2 is a diagram illustrating a transfer substrate in the first embodiment of the present invention. [Figure 7] 1A to 1C are diagrams illustrating the effects of the transfer substrate of the present invention. [Figure 8] FIG. 10 is a diagram illustrating a transfer substrate according to a second embodiment of the present invention. [Figure 9] FIG. 10 is a diagram illustrating a transfer substrate according to a third embodiment of the present invention. [Figure 10] FIG. 10 is a diagram illustrating a transfer substrate according to a fourth embodiment of the present invention. [Figure 11] 1A and 1B are diagrams illustrating a transfer process using a conventional transfer device. DETAILED DESCRIPTION OF THE INVENTION

[0023] FIG. 1 shows a mounting apparatus including a transfer device of the present invention.

[0024] The mounting device 100 has a transfer unit 10, an inspection unit 20, and a mounting unit 30. The transfer unit 10 transfers elements between boards, and the mounting unit 30 mounts the elements onto a circuit board. Prior to the transfer of elements by the transfer unit, the inspection unit 20 inspects the elements. The transportation of boards between each device is performed by a robot hand 40.

[0025] The transfer unit 10 is shown in detail in FIG.

[0026] The transfer unit 10 is a transfer device in the present invention, and includes a laser irradiation unit 12 that irradiates laser light 11, a transfer substrate holding unit 13 that holds the transfer substrate 4a and is movable at least in the X-axis and Y-axis directions, a transferee substrate holding unit 14 that is located below the transfer substrate holding unit 13 and holds the transferee substrate 4b so as to face the transfer substrate 4a with a gap therebetween, and a control unit not shown.

[0027] The laser irradiation unit 12, an embodiment of the active energy ray application unit of the present invention, is a device that irradiates laser light 11, such as an excimer laser, which is an active energy ray, and is fixed to the transfer unit 10. In this embodiment, the laser irradiation unit 12 irradiates spot-shaped laser light 11. The irradiation position of the laser light 11 in the X-axis and Y-axis directions is controlled by a control unit via a galvanometer mirror 15 and an fθ lens 16, the angles of which are adjusted by a control unit, and the laser light 11 selectively irradiates multiple elements 1 arranged on a transfer substrate 4a held by a transfer substrate holder 13. When the laser light 11 is incident on the elements 1 on the transfer substrate 4a, ablation occurs between the transfer substrate 4a and the elements 1 due to the application of optical energy, and the elements 1 are transferred from the transfer substrate 4a to the transfer substrate 4b. In this description, the elements 1 are semiconductor chips such as LEDs, and hereinafter will also be referred to as semiconductor chips 1. In this embodiment, the semiconductor chips 1 are 300 μm square.

[0028] The transfer substrate holder 13 has an opening, and adsorbs and holds the vicinity of the outer periphery of the transfer substrate 4a. Laser light 11 emitted from a laser irradiation unit 12 can be applied to the transfer substrate 4a held by the transfer substrate holder 13 through this opening.

[0029] Furthermore, the transfer substrate holding unit 13 is moved relative to the transferred substrate holding unit 14 in at least the X-axis direction and the Y-axis direction by a movement mechanism (not shown). A control unit controls this movement mechanism to adjust the position of the transfer substrate holding unit 13, thereby adjusting the relative position of the semiconductor chip 1 held on the transfer substrate 4a with respect to the transferred substrate 4b.

[0030] The transferred substrate holding part 14 has a flat upper surface and holds the transferred substrate 4b during the transfer process of the semiconductor chip 1. The upper surface of this transferred substrate holding part 14 is provided with a plurality of suction holes, which hold the back surface of the transferred substrate 4b (the surface to which the semiconductor chip 1 is not transferred) by suction force.

[0031] In this embodiment, only the transfer substrate holding unit 13 moves in the X-axis and Y-axis directions, thereby causing relative movement between the transfer substrate holding unit 13 and the transferred substrate holding unit 14. However, if the dimensions of the transferred substrate 4b are large and the entire surface of the transferred substrate 4b cannot be positioned directly under the irradiation range of the laser light 11, the transferred substrate holding unit 14 may also be provided with a movement mechanism in the X-axis and Y-axis directions.

[0032] Next, the details of the inspection unit 20 are shown in FIG.

[0033] The inspection unit 20 has a camera 21, an inspection target substrate holder 22, and a control unit (not shown), and the camera 21 captures an image of the inspection target held by the inspection target substrate holder 22, and performs an appearance inspection of the semiconductor chip 1 by image analysis. In this embodiment, the inspection target is a plurality of semiconductor chips 1 transferred onto a transfer substrate 4a.

[0034] The semiconductor chips 1 on the transfer substrate 4a may not achieve their performance during the process of forming the semiconductor chips 1 on the growth substrate, or may develop cracks during transfer to the transfer substrate 4a. Whether the performance of the semiconductor chips 1 is normal or not can be determined with high accuracy by checking the color and shape of the semiconductor chips 1.

[0035] In this embodiment, the camera 21 is, for example, a CMOS camera having an image sensor, which converts light rays focused on the image sensor into an electrical signal as a trigger when it receives an external signal, thereby creating a digital image. The image sensing direction of the camera 21 is vertically downward, and the camera 21 captures an image of the semiconductor chip 1 from above. The camera 21 is attached to a moving device (not shown), which is driven by a control unit to move the camera 21 in the X-axis and Y-axis directions.

[0036] The inspection unit 20 also has an illumination unit (not shown). In this embodiment, the illumination unit is an LED light that emits light in synchronization with the movement of the camera 21 by the moving device, and the camera 21 captures images when the illumination unit emits light, thereby continuously capturing images of the appearances of the semiconductor chips 1 arranged in the X-axis direction and the Y-axis direction.

[0037] Next, the mounting section 30 is shown in detail in FIG.

[0038] The mounting unit 30 includes a mounting table 31, a head 32, and a two-field optical system 33, as well as a control unit (not shown). In this embodiment, the transfer substrate 4b is placed opposite the circuit board 6, and multiple semiconductor chips 1 are mounted together.

[0039] The mounting table 31 is configured so that the circuit board 6 can be placed thereon and held immovably by vacuum suction, and can be moved in the X and Y axis directions by an XY stage.

[0040] In this embodiment, the mounting table 31 has a heater 34, and the temperature of the surface of the mounting table 31 (≈ the temperature of the circuit board 6 placed on the mounting table 31) can be controlled by the control unit. Also, a thermometer (not shown) is provided on the mounting table 31, and the temperature of the mounting table 31 measured by this thermometer can be fed back to perform temperature control.

[0041] The head 32 has a substantially flat tip and one or more suction holes, and during the mounting process, it suctions and holds the surface of the transfer substrate 4b on which the semiconductor chip 1 is not transferred. The head 32 is movable in the Z-axis direction, and brings the circuit board 6 held on the mounting table 31 into contact with the bumps of the semiconductor chip 1 transferred to the transfer substrate 4b held by the head 32, and applies pressure. The head 32 also has a heater 35, and the temperature of the head 32, particularly the tip, can be controlled by a control unit. The head 32 is also provided with a thermometer (not shown), and the temperature of the head 32 measured by this thermometer can be fed back to control the temperature.

[0042] In addition, the head 32 is configured to be movable in the θ direction (a central direction with the Z-axis direction as the center of rotation), and by linking the movement of the mounting table 31 in the X- and Y-axis directions with the movement of the head 32 in the Z-axis and θ directions, the semiconductor chip 1 can be thermocompression bonded and mounted at a predetermined position on the circuit board 6.

[0043] The two-field optical system 33 can enter between the head 32 and the circuit board 6 when the circuit board 6 is placed on the mounting table 31 and capture images of both. Each captured image is processed by the control unit to recognize any misalignment between them. The control unit then takes this misalignment into consideration and controls the semiconductor chips 1 so that they come into contact with and are bonded to predetermined positions on the circuit board 6, thereby mounting the semiconductor chips 1 with high precision in the X and Y axis directions.

[0044] Next, the transfer process carried out in the transfer unit 10 shown in FIG. 2 will be described with reference to FIG.

[0045] Before this transfer step, each semiconductor chip 1 on the transfer substrate 4a is inspected by the inspection unit 20, and semiconductor chips 1 that are determined to be defective in performance are removed from the transfer substrate 4a in advance.

[0046] The transfer substrate 4a and the transferee substrate 4b have adhesive layers 3a and 3b on one side, respectively, and the surfaces of these adhesive layers 3a and 3b are adhesive surfaces that hold the semiconductor chip 1 by their adhesive force.

[0047] Here, the adhesive layer 3b is also referred to as a transfer portion 3b in this description, since it is a portion having a transfer surface, which is a surface onto which the element 1 is transferred from the transfer substrate 4a.

[0048] In the transfer process described herein, a transfer substrate holding unit 13 (not shown) holds a transfer substrate 4a so that the adhesive layer 3a and the semiconductor chip 1 face downward as shown in Figure 5(a), and a transfer substrate holding unit 14 holds a transfer substrate 4b so that the transfer substrate 4b having a transfer portion 3b is positioned below the transfer substrate 4a.

[0049] The control unit of the transfer unit 10 then adjusts the angle of the galvanometer mirror 15 to allow the laser beam 11c to pass through the transfer substrate 4a and reach the interface between the adhesive layer 3a and the predetermined semiconductor chip 1, thereby laser lifting off the semiconductor chip 1. Specifically, the laser beam 11 imparts optical energy to the interface between the adhesive layer 3a and the predetermined semiconductor chip 1, causing ablation and generating gas from the adhesive layer 3a. This gas generation energizes the semiconductor chip 1, causing it to fly downward from the transfer substrate 4a and land on the transferee substrate 4b. Note that while FIG. 5(a) illustrates a form in which the adhesive layer 3a disappears due to ablation, it may also be a form in which gas is generated internally and the adhesive layer 3a swells (so-called blistering).

[0050] In addition, in this transfer process, the semiconductor chips 1 on the transfer substrate 4a are not all transferred continuously, but the semiconductor chips 1 are selectively transferred as shown in Fig. 5(b). It is assumed that the arrangement of the semiconductor chips 1 on the transfer substrate 4a is the same as the arrangement of the semiconductor chips 1 on the growth substrate, but by selectively transferring the semiconductor chips 1 in this transfer process, it is possible to transfer the semiconductor chips 1 to the transfer substrate 4b in any arrangement.

[0051] In this embodiment, in preparation for the mounting process described below, the arrangement of the semiconductor chips 1 on the transfer substrate 4b corresponds to the positions where the semiconductor chips 1 are to be placed on the circuit board 6. More specifically, the semiconductor chips 1 are arranged on the transfer substrate 4b in a layout that is a mirror image of the layout of the semiconductor chips 1 within an area where the semiconductor chips 1 can be mounted on the circuit board 6 in a single mounting process.

[0052] On the other hand, as shown by the dashed line on the transfer substrate 4b in Fig. 5(b), there may be cases where the transfer substrate 4a does not have a semiconductor chip 1 that can be transferred to the position on the transfer substrate 4b where the transfer is to be performed. In such cases, it is advisable to move the transfer substrate 4a and the transfer substrate 4b relative to each other as shown in Fig. 5(c), and then perform laser lift-off.

[0053] Next, regarding the transfer substrate 4b used in the transfer device 10 of the present invention, a transfer substrate 4b in a first embodiment is shown in Figures 6(a) and 6(b), where Figure 6(a) is a front cross-sectional view and Figure 6(b) is a top view.

[0054] As described above, the transfer substrate 4b has a transfer portion 3b on the side where the semiconductor chip 1 is transferred, and the transfer surface, which is the surface where the semiconductor chip 1 is transferred in this description, is an adhesive surface. The transferred semiconductor chip 1 is held in place by the adhesive force of this adhesive surface.

[0055] As shown in Figures 6(a) and 6(b), the transferred portion 3b of the transferred substrate 4b has a configuration in which multiple cylindrical bodies are arranged in a matrix at predetermined intervals, and the tip surface of each cylindrical body corresponds to the transferred surface. The cross-sectional area of ​​each cylindrical body is smaller than the area of ​​the semiconductor chip 1, and multiple cylindrical bodies hold one semiconductor chip 1. Note that the transferred region R on the transferred surface, indicated by the two-dot chain line in Figure 6(a), indicates the region to which one specified semiconductor chip 1 should be transferred.

[0056] In this embodiment, each columnar body has a diameter of 4 μm, a height of 3 μm, and is arranged at intervals of 10 to 15 μm. Therefore, there is a gap between adjacent columnar bodies. Gas can pass through this gap, and the inside and outside of the transfer region R are in communication. In this embodiment, this gap is called a communication path 3c.

[0057] Next, the effect of the transferred surface having a communication path as in the transferred substrate 4b of this embodiment is shown in FIG.

[0058] Irradiation with the laser beam 11c causes ablation in the adhesive layer 3a of the transfer substrate 4a, and the semiconductor chip 1 is urged toward the transferee substrate 4b, thereby compressing the gas layer formed between the semiconductor chip 1 and the transferee surface of the transferee substrate 4b.

[0059] Here, in the present invention, the transfer target portion 3b of the transfer target substrate 4b has a communication path 3c, and this communication path 3c connects the transfer target region R, where a predetermined semiconductor chip 1 is to be transferred, to the outside of this transfer target region R. Therefore, when the gas layer formed between the semiconductor chip 1 and the transfer target surface of the transfer target substrate 4b is compressed and a pressure difference occurs between the transfer target region R and its outside, the communication path 3c serves as an escape route for the gas, as shown by the arrows in Fig. 7, causing a flow of gas from the transfer target region R to the outside of the transfer target region R, thereby reducing the pressure difference. Therefore, the pressure of the gas between the semiconductor chip 1 and the transfer target surface of the transfer target substrate 4b (pressure P1 shown in Fig. 7) becomes smaller than pressure P0 shown in Fig. 11.

[0060] In this way, the communication path 3c functions as an escape route for gas from the transfer region R to which the predetermined semiconductor chip 1 is transferred to the outside of this transfer region R, thereby reducing resistance to the flight of the semiconductor chip 1 toward the transfer substrate 4b and reducing deviation in the landing position of the semiconductor chip 1 on the transfer substrate 4b. Therefore, the semiconductor chip 1 is transferred to the transfer substrate 4b with good positional accuracy.

[0061] Furthermore, the effect of improving the transfer position accuracy obtained by having the transfer target portion 3b have the communication path 3c as in the present invention becomes greater the larger the area of ​​the element 1 and the thinner it is.

[0062] A transfer substrate 4b according to the second embodiment of the present invention is shown in Fig. 8. Fig. 8(a) is a front cross-sectional view, and Fig. 8(b) is a top view.

[0063] In this embodiment, the communication path 3c is a groove-shaped recess, and the dimension of the groove in the longitudinal direction (the Y-axis direction in FIG. 8(b)) is larger than the dimension of the surface facing the transfer surface of the semiconductor chip 1. Therefore, this groove-shaped communication path 3c extends beyond the transfer region R to which one semiconductor chip 1 is transferred, and spans the inside and outside of the transfer region R.

[0064] When the semiconductor chip 1 is forced by ablation toward the transfer substrate 4b provided in the transfer portion 3b through such a groove-shaped communication path 3c, the gas layer between the semiconductor chip 1 and the transfer surface is compressed and the gas can escape laterally from the transfer region R through the groove-shaped communication path 3c as shown by the arrow in Figure 8(b), thereby reducing the increase in pressure of the gas layer formed between the semiconductor chip 1 and the transfer surface of the transfer substrate 4b due to laser lift-off.

[0065] Here, the groove-shaped communication path 3c may extend to both ends of the transferred substrate 4b (both ends in the Y-axis direction in FIG. 8(b)).

[0066] Furthermore, the groove-shaped communication path 3c may be provided so as to extend in only one direction (Y-axis direction) as shown in Figure 8(b), but is not limited to this and may also be provided in the X-axis direction in addition to the Y-axis direction.

[0067] Furthermore, the groove-shaped communication path 3c only needs to be in a form that spans at least the inside and outside of the transfer area, and if it is in such a form, it does not matter if the length of the communication path 3c is shorter than the length of the semiconductor chip 1.

[0068] A transfer substrate 4b according to the third embodiment of the present invention is shown in Fig. 9. Fig. 9(a) is a front cross-sectional view, and Fig. 9(b) is a top view.

[0069] 9(a), in this embodiment, the communication paths 3c are hole-like flow paths drilled in the transfer target portion 3b, with one opening provided on the transfer target surface. A cavity 3d is provided between the transfer target portion 3b and the transfer target substrate body, and the other opening of each communication path 3c communicates with this cavity 3d. As a result, one opening of the hole-like communication paths 3c is provided in the transfer target region R, and the other opening is provided outside the transfer target region R.

[0070] In this way, when the semiconductor chip 1 is urged by ablation toward a transfer substrate 4b having a hole-shaped communication path 3c with one opening provided in the transfer region R and the other opening provided outside the transfer region R, the gas layer between the semiconductor chip 1 and the transfer surface is compressed and can escape through the cavity 3d to the other communication path 3c outside the transfer region R as shown by the arrow in Figure 9(a), making it possible to reduce the increase in pressure of the gas layer formed between the semiconductor chip 1 and the transfer surface of the transfer substrate 4b due to laser lift-off. In this way, the communication path 3c may have a shape that is closed except for the inlet and outlet, such as a hole, so-called a flow path, and does not necessarily have a closed shape like the groove shape described above.

[0071] 9(a), all of the communication paths 3c may be connected together, but this is not limiting, and it is sufficient that at least two communication paths 3c are connected. In this case, if the communication path 3c inside the transfer region R where one semiconductor chip 1 is transferred is connected to the communication path 3c outside the transfer region R, gas can be released during laser lift-off.

[0072] Fig. 10 shows a transfer substrate 4b according to the fourth embodiment of the present invention, in which Fig. 10(a) is a front cross-sectional view and Fig. 10(b) is a top view.

[0073] 10(a), in this embodiment, the communication paths 3c are holes drilled in the transferred portion 3b and have one opening on the transferred surface. Each communication path 3c provided in the transferred portion 3b passes through the transferred portion 3b and the transferred substrate body to the back surface of the transferred substrate 4b. That is, in this embodiment as well, one opening of the hole-shaped communication paths 3c is provided in the transferred region R, and the other opening is provided outside the R transferred region.

[0074] When the semiconductor chip 1 is forced by ablation toward the transfer substrate 4b having a communication path 3c penetrating to the back surface of the transfer substrate 4b, the gas layer between the semiconductor chip 1 and the transfer surface is compressed and the gas can escape from the transfer region R to the opposite side of the transfer substrate 4b through the communication path 3c as shown by the arrow in Figure 10(a), thereby significantly reducing the increase in pressure of the gas layer formed between the semiconductor chip 1 and the transfer surface of the transfer substrate 4b due to laser lift-off.

[0075] Here, in the case of the transfer substrate 4b having hole-shaped communication paths 3c penetrating the transfer substrate 4b as in this embodiment, it is preferable that in the transfer device 10 as shown in Figure 2, the transfer substrate holding part 14 is configured so as not to block the openings of each communication path 3c on the back surface of the transfer substrate 4b (the surface opposite to the transfer surface).

[0076] The above-described transfer substrate and transfer device make it possible to transfer elements with high positional accuracy.

[0077] Here, the transfer substrate and transfer device of the present invention are not limited to the above-described forms and may have other forms within the scope of the present invention. For example, the form of the communication path provided in the transfer portion of the transfer substrate is not limited to the forms explicitly stated in the above embodiments, and may be any form that serves as an escape route for gas when the element is urged toward the transfer substrate by ablation, and may be, for example, an embodiment that combines the above embodiments.

[0078] Alternatively, the surface to be transferred may have a predetermined surface roughness such as a matte finish, so that a communication path is provided between the inside and outside of the area to be transferred.

[0079] Moreover, the communication path described above may be provided on the element instead of on the transferred portion.

[0080] In the above description, the transfer process is performed under atmospheric pressure, but the transfer process may be performed in a reduced pressure environment by providing a pressure reducing section (not shown) in the transfer device. Furthermore, the transfer process may be performed not only in an air environment but also in an environment of other gases such as nitrogen.

[0081] Furthermore, the use of the transfer substrate of the present invention is not limited to a method in which elements are biased, such as laser lift-off, but is also effective in a method in which elements are allowed to fall freely. In other words, the effects of the present invention are achieved when elements are transferred by a process in which the elements are not in contact with anything at the moment they are transferred to the transfer surface.

[0082] In the above description, the laser irradiation position in the transfer device is controlled by a galvanometer mirror, but this is not limiting and other known techniques may be used for control, such as a polygon mirror. Furthermore, the laser irradiation position may be controlled only by the relative movement of the transfer substrate and the transferred substrate, without using mirror reflection.

[0083] Furthermore, the inspection of semiconductor chips by the inspection unit is not limited to visual inspection using image analysis, but may be inspection using X-rays, or inspection using photoluminescence. [Explanation of symbols]

[0084] 1. Semiconductor chip 3a Adhesive layer 3b Adhesive layer (transferred area) 3c Communication path 3d cavity 4a Transfer substrate 4b Transferred substrate 6 Circuit Board 10 Transfer section 11 Laser light 11c Laser light 12 Laser irradiation unit 13 Transfer substrate holder 14 Transferred substrate holder 15 Galvanometer mirror 16 fθ lens 20 Inspection Department 21 Camera 22 Inspection target substrate holding section 30 Mounting section 31 Mounting table 32 heads 33 2-field optical system 34 Heater 35 Heater 40 Robot Hand 91 elements 92 Transfer substrate 93 Transferred substrate 100 Mounting equipment

Claims

1. a transfer substrate on which an element is transferred onto a transfer surface by ablation caused by application of active energy rays, the transfer substrate adhesively holding the element; A transfer substrate, characterized in that a transfer region on the transfer surface where a predetermined element is to be transferred is provided with a communication path that communicates with the outside of the transfer region.

2. 2. The transfer substrate according to claim 1, wherein the transfer region is formed by the tip surfaces of a plurality of arranged pillars, and gaps between the pillars form the communication paths.

3. 2. The transfer substrate according to claim 1, wherein the communication path is a recess formed on the transfer surface so as to straddle the inside and outside of the transfer area.

4. The transfer substrate according to claim 1, characterized in that the communication path is a hole-like flow path drilled in the transfer surface, one opening of the flow path being provided in the transfer area and the other opening being provided outside the transfer area.

5. A transfer device that applies active energy rays to a transfer substrate that holds elements to cause ablation, and urges the elements to transfer from the transfer substrate to a transfer substrate according to any one of claims 1 to 4, a transfer substrate holding unit that holds the transfer substrate; a transfer substrate holder that holds the transfer substrate so that a surface of the transfer substrate that holds elements faces the transfer substrate; an active energy ray applying unit that applies active energy rays to a portion of the transfer substrate held by the transfer substrate holding unit; A transfer device comprising:

6. a transfer device that applies active energy rays to a transfer substrate that adhesively holds elements, thereby causing ablation and urging the elements to transfer from the transfer substrate to a transferee substrate; a transfer substrate holding unit that holds the transfer substrate; a transfer substrate holder that holds the transfer substrate so that a surface of the transfer substrate that holds elements faces the transfer substrate; an active energy ray applying unit that applies active energy rays to a portion of the transfer substrate held by the transfer substrate holding unit; Equipped with A transfer apparatus, characterized in that a held surface of an element that is held on the transferred substrate is provided with a communication path that communicates with the outside of the held surface.

Images