Nozzle unit, liquid treatment device, and liquid treatment method

Abstract

To improve the uniformity of temperature distribution within a substrate surface.SOLUTION: A nozzle unit according to an aspect of the present disclosure is a unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate. The nozzle unit includes a gas nozzle having a discharge flow path for circulating gas and a discharge port for discharging the gas flowing through the discharge flow path toward the surface of the substrate. The discharge port is formed to extend in a first direction along the surface. The width of the discharge flow path in the first direction increases toward the discharge port such that gas is discharged radially from the discharge port.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a nozzle unit, a liquid processing apparatus, and a liquid processing method. [Background technology]

[0002] Patent Document 1 discloses a developing device configured to develop a resist film formed on the surface of a substrate by supplying a developing solution to the surface of the substrate. The developing device includes an air blower that blows air adjusted to a predetermined temperature onto the substrate from above, and a temperature regulator that maintains a chuck device and a developing solution supply pipe at a predetermined temperature by circulating temperature-controlled water adjusted to a predetermined temperature. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-274028 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a nozzle unit and a liquid processing apparatus that can improve the uniformity of the temperature distribution within the surface of a substrate. [Means for solving the problem]

[0005] A nozzle unit according to one aspect of the present disclosure is a unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate. The nozzle unit includes a gas nozzle having a discharge flow path through which gas flows and a discharge port that discharges the gas flowing through the discharge flow path toward the surface of the substrate. The discharge port is formed to extend in a first direction along the surface. The width of the discharge flow path in the first direction increases toward the discharge port so that the gas from the discharge port is discharged radially. [Effects of the Invention]

[0006] According to the present disclosure, a nozzle unit and a liquid processing apparatus are provided that are capable of improving the uniformity of the temperature distribution within the surface of a substrate. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view showing an example of a substrate processing system. [Figure 2] FIG. 2 is a side view schematically illustrating an example of the interior of the substrate processing system. [Figure 3] FIG. 3 is a top view schematically illustrating an example of the interior of the substrate processing system. [Figure 4] FIG. 4 is a schematic diagram showing an example of the liquid processing unit. [Figure 5] FIG. 5 is a side view schematically showing an example of a nozzle unit. [Figure 6] FIG. 6 is another side view schematically showing an example of the nozzle unit. [Figure 7] 7(a) to 7(c) are schematic diagrams showing an example of a gas nozzle. [Figure 8] 8(a) to 8(c) are schematic diagrams showing other examples of gas nozzles. [Figure 9] 9(a) to 9(c) are schematic diagrams showing other examples of gas nozzles. [Figure 10] FIG. 10 is a block diagram illustrating an example of the functional configuration of the controller. [Figure 11] FIG. 11 is a block diagram illustrating an example of a hardware configuration of the controller. [Figure 12] FIG. 12 is a flowchart showing an example of a liquid processing method. [Figure 13] 13(a) and 13(b) are schematic diagrams for explaining an example of a liquid processing method. [Figure 14] FIG. 14 is a schematic diagram for explaining an example of a liquid processing method. [Figure 15] 15(a) and 15(b) are schematic diagrams for explaining an example of a liquid processing method. [Figure 16]Fig. 16(a) is a diagram showing an example of the in-plane temperature distribution when no cooling gas is supplied, and Fig. 16(b) is a diagram showing an example of the in-plane temperature distribution when cooling gas is supplied. [Figure 17] FIG. 17 is a graph showing an example of the variation in the in-plane line width distribution. [Figure 18] 18(a) and 18(b) are diagrams showing an example of the results of measuring the temperature change on the surface of the workpiece W when a cooling gas is supplied to the surface of the workpiece W. FIG. [Figure 19] FIG. 19 is a diagram showing an example of the results of a simulation of the temperature change on the surface of the workpiece when the supply period of the cooling gas during the maintenance period is changed. [Figure 20] FIG. 20 is a diagram showing an example of positions resulting from an evaluation of the correspondence relationship between the ratio of the period during which the cooling gas is supplied to the entire maintenance period and the variation in line width of the resist pattern within the workpiece surface. [Figure 21] Figure 21(a) is a diagram showing an example of the in-plane temperature distribution on the surface of a workpiece when the cooling gas supply rate is 45%, Figure 21(b) is a diagram showing an example of the in-plane CD (CD) distribution on the surface of a workpiece when the cooling gas supply rate is 63%, and Figure 21(c) is a diagram showing an example of the in-plane CD (CD) distribution on the surface of a workpiece when the cooling gas supply rate is 81%. [Figure 22] 22(a) and 22(b) are diagrams showing an example of the results of evaluating how much the variation in line width of the resist pattern changes when the supply position of the cooling gas is changed. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments are described below.

[0009] A nozzle unit according to one exemplary embodiment is a unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate. The nozzle unit includes a gas nozzle having a discharge flow path through which a gas flows and a discharge port that discharges the gas flowing through the discharge flow path toward the surface of the substrate. The discharge port is formed to extend in a first direction along the surface. The width of the discharge flow path in the first direction increases toward the discharge port so that the gas from the discharge port is discharged radially.

[0010] In this nozzle unit, gas from the gas nozzle outlet is discharged radially in a first direction in which the outlet extends. Therefore, gas is supplied from the gas nozzle to an area on the surface of the substrate that is longer than the width of the outlet in the first direction. This allows gas to be discharged so that the area longer than the width of the outlet in the first direction is aligned with the center of the substrate. As a result, the center of the substrate, where the gas is supplied, is cooled more than the peripheral edge of the substrate during liquid processing. This makes it possible to improve the uniformity of the temperature distribution within the substrate surface.

[0011] The gas nozzle may be configured so that both ends of the outlet in the first direction are visible when viewed from the first direction. In this case, the length of the outlet in the first direction is prevented from increasing, and gas can be supplied to a wider area on the surface. This allows for simplification of the nozzle unit.

[0012] The central portion of the surface including the edge of the discharge port in the first direction may protrude toward the surface. In this case, the difference in the length of the discharge flow path toward the surface including the edge of the discharge port within the opening surface is reduced. Therefore, it is possible to improve the uniformity of the gas flow rate within the surface including the edge of the discharge port.

[0013] The nozzle unit may further include a second gas nozzle having a second outlet that discharges a second gas toward the surface, and a drive unit that moves both the gas nozzle and the second gas nozzle along the surface. In this case, the two nozzles can be moved by a single drive unit, which makes it possible to simplify the nozzle unit including the drive unit.

[0014] The flow rate of the gas discharged from the discharge port may be slower than the flow rate of the second gas discharged from the second discharge port, in which case the gas nozzle and the second gas nozzle can be used for different processes.

[0015] The nozzle unit may further include a processing liquid nozzle having a third outlet that discharges the processing liquid toward the surface. The drive unit may move the gas nozzle, the second gas nozzle, and the processing liquid nozzle together. In this case, the three nozzles can be moved by one drive unit, which makes it possible to simplify the nozzle unit including the drive unit.

[0016] The gas nozzle and the processing liquid nozzle may be disposed at different positions in a second direction perpendicular to the first direction and extending along the surface. The gas nozzle and the processing liquid nozzle may be configured such that the distance in the second direction between the position on the surface where the gas from the gas nozzle reaches and the position on the surface where the processing liquid from the processing liquid nozzle reaches is smaller than the distance in the second direction between the outlet and the third outlet. In this case, it is possible to shorten the time required to switch between a process using the gas from the gas nozzle and a process using the processing liquid from the processing liquid nozzle.

[0017] The second gas nozzle and the processing liquid nozzle may be disposed at different positions in the second direction. The second gas nozzle and the processing liquid nozzle may be configured so that, as viewed from the first direction, the inclination of the direction in which the processing liquid is ejected from the processing liquid nozzle relative to the surface is smaller than the inclination of the direction in which the second gas is ejected from the second gas nozzle relative to the surface. In this case, it is possible to suppress the influence of the processing liquid ejected from the processing liquid nozzle on the surface of the substrate.

[0018] The gas nozzle, the second gas nozzle, and the processing liquid nozzle may be arranged in this order in the second direction, in which case the nozzle unit can be configured to shorten the gas supply paths to the gas nozzle and the second gas nozzle.

[0019] According to one exemplary embodiment, the liquid processing apparatus includes the nozzle unit, a substrate holding unit that holds and rotates a substrate with its surface facing upward, and a control unit that controls the nozzle unit and the substrate holding unit. While the substrate is being rotated by the substrate holding unit, the control unit causes the gas nozzle to eject gas so that the direction of the gas's reach on the surface intersects with the direction of rotation of the substrate, thereby causing the gas nozzle to supply gas to a region of the surface including the central portion. In this case, the gas can be diffused and supplied along the circumferential direction in the central portion of the substrate, thereby reducing the temperature of the central portion compared to the peripheral portion of the substrate. This reduces the temperature difference between the central portion and the peripheral portion within the substrate surface.

[0020] In one exemplary embodiment, a liquid processing method maintains the processing liquid stagnating on a substrate, while supplying gas from above the processing liquid to at least a region of the upper surface of the processing liquid stagnating on the substrate that is inside the peripheral edge, so as to diffuse in a radial direction relative to the circumferential direction of the substrate.

[0021] In the liquid processing method described above, the substrate is cooled in the vicinity of the region to which the gas is supplied by supplying the gas. Here, by supplying the gas so that the gas diffuses in the radial direction of the substrate rather than the circumferential direction, the central portion is cooled more than the peripheral portion. Therefore, it is possible to improve the uniformity of the temperature distribution within the substrate surface.

[0022] While the gas is being supplied to the processing liquid remaining on the substrate, the flow rate and flow velocity of the gas may be adjusted so that the surface of the substrate is not exposed due to the movement of the processing liquid caused by the supply of the gas. In this case, it is possible to cool a portion of the processing area on the substrate that is appropriate for the temperature sensitivity of the chemical liquid so that the impact of the gas does not have an adverse effect on the liquid processing, such as roughening or breaking down the film of the processing liquid.

[0023] The maintenance period from when the processing liquid is retained on the substrate over the entire surface of the substrate until removal of the processing liquid from the substrate begins may include a non-supply period in which gas is not supplied. In this case, by providing the non-supply period in which gas is not supplied within the maintenance period, it is possible to adjust the cooling status of the substrate by the gas. Therefore, it is possible to improve the uniformity of the temperature distribution within the substrate surface.

[0024] The non-supply period may be provided in the first half of the sustain period. By providing the non-supply period in the first half of the sustain period, it is possible to improve the uniformity of the temperature distribution within the substrate surface throughout the entire sustain period.

[0025] The gas may be supplied while the substrate is rotating so that the gas reaches regions on the substrate that do not include the center of the substrate. When the gas is supplied while the substrate is rotating, if the gas reaches the center of the substrate, a difference in the amount of gas supplied between the center and the peripheral edge of the substrate may occur. Therefore, by adjusting the supply position so that the gas does not reach the center, more uniform cooling by the gas can be achieved.

[0026] An embodiment will be described below with reference to the drawings. In the description, identical elements or elements having identical functions are given the same reference numerals, and duplicated explanations will be omitted. Some drawings show a Cartesian coordinate system defined by an X-axis, a Y-axis, and a Z-axis. In the following embodiment, the Z-axis corresponds to the vertical direction, and the X-axis and the Y-axis correspond to the horizontal direction.

[0027] [Substrate processing system] 1 to 3, the configuration of a substrate processing system 1 will be described. The substrate processing system 1 includes a coating and developing apparatus 2 (liquid processing apparatus) and an exposure apparatus 3.

[0028] The coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the workpiece W. The coating and developing apparatus 2 is also configured to perform a developing process on the resist film R. The exposure apparatus 3 is configured to transfer the workpiece W between the coating and developing apparatus 2 and to perform an exposure process (pattern exposure) on the resist film R formed on the surface Wa (see FIG. 4, etc.) of the workpiece W. The exposure apparatus 3 may selectively irradiate an energy beam onto an exposure target portion of the resist film R by a method such as immersion exposure.

[0029] The workpiece W to be processed is, for example, a substrate, or a substrate on which a film or circuit has been formed by a predetermined process. The substrate included in the workpiece W is, for example, a wafer containing silicon. The workpiece W (substrate) may be circular or may be formed in a non-circular plate shape such as a polygonal shape. The workpiece W may have a cutout portion cut out from a portion. The cutout portion may be, for example, a notch (a U-shaped or V-shaped groove) or a linear portion extending linearly (so-called orientation flat). The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or an intermediate product obtained by performing a predetermined process on such a substrate. The diameter of the workpiece W may be, for example, approximately 200 mm to 450 mm.

[0030] The energy ray may be, for example, ionizing radiation, non-ionizing radiation, etc. Ionizing radiation is radiation having sufficient energy to ionize atoms or molecules. Ionizing radiation may be, for example, extreme ultraviolet (EUV), electron beam, ion beam, X-ray, α-ray, β-ray, γ-ray, heavy particle beam, proton beam, etc. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. Non-ionizing radiation may be, for example, g-ray, i-ray, KrF excimer laser, ArF excimer laser, F2 excimer laser, etc.

[0031] (Coating and developing equipment) The coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the workpiece W before the exposure process by the exposure apparatus 3. The coating and developing apparatus 2 is also configured to perform a development process on the resist film R after the exposure process by the exposure apparatus 3.

[0032] 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device (control unit) 100. The carrier block 4, the processing block 5, and the interface block 6 are aligned in the horizontal direction.

[0033] The carrier block 4 includes a carrier station 12 and a loading / unloading section 13. The carrier station 12 supports a plurality of carriers 11. Each carrier 11 accommodates at least one workpiece W in a sealed state. A side surface 11a of the carrier 11 is provided with an opening / closing door (not shown) for loading and unloading the workpiece W. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading section 13.

[0034] The loading / unloading section 13 is located between the carrier station 12 and the processing block 5. As shown in FIGS. 1 and 3, the loading / unloading section 13 has multiple doors 13a. When a carrier 11 is placed on the carrier station 12, the doors of the carrier 11 face the doors 13a. By simultaneously opening the doors 13a and the doors on the side surface 11a, the inside of the carrier 11 and the inside of the loading / unloading section 13 are connected. As shown in FIGS. 2 and 3, the loading / unloading section 13 has a built-in transport arm A1. The transport arm A1 is configured to remove a workpiece W from the carrier 11 and deliver it to the processing block 5, and to receive a workpiece W from the processing block 5 and return it to the carrier 11.

[0035] As shown in FIGS. 2 and 3, the processing block 5 includes processing modules PM1 to PM4.

[0036] The processing module PM1 is configured to form an underlayer film on the surface of the workpiece W and is also called a BCT module. As shown in FIG. 3, the processing module PM1 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A2 configured to transport the workpiece W to these units. The liquid processing unit U1 of the processing module PM1 may be configured to apply, for example, a coating liquid for forming an underlayer film to the workpiece W. The heat processing unit U2 of the processing module PM1 may be configured to perform, for example, a heat treatment to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form an underlayer film. An example of the underlayer film is an anti-reflective (SiARC) film.

[0037] The processing module PM2 is configured to form an intermediate film (hard mask) on the underlying film and is also referred to as an HMCT module. The processing module PM2 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A3 configured to transport the workpiece W to these units. The liquid processing unit U1 of the processing module PM2 may be configured to apply, for example, a coating liquid for forming the intermediate film to the workpiece W. The heat processing unit U2 of the processing module PM2 may be configured to perform, for example, a heat treatment to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form an intermediate film. Examples of intermediate films include an SOC (spin-on-carbon) film and an amorphous carbon film.

[0038] The processing module PM3 is configured to form a thermosetting and photosensitive resist film R on the intermediate film, and is also called a COT module. The processing module PM3 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A4 configured to transport a workpiece W to these units. The liquid processing unit U1 of the processing module PM3 may be configured to apply a coating liquid (resist liquid) for forming a resist film to the workpiece W, for example. The thermal processing unit U2 of the processing module PM3 may be configured to perform a heating process (PAB: Pre Applied Bake) to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form a resist film R.

[0039] The resist material contained in the resist solution may be a positive resist material or a negative resist material. A positive resist material is a resist material in which the patterned exposed areas dissolve, leaving patterned unexposed areas (light-shielding areas). A negative resist material is a resist material in which the patterned unexposed areas (light-shielding areas) dissolve, leaving patterned exposed areas.

[0040] The processing module PM4 is configured to perform a development process on the exposed resist film and is also called a DEV module. The processing module PM4 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A5 configured to transport the workpiece W to these units. The liquid processing unit U1 of the processing module PM4 is configured to perform a development process (liquid processing) on ​​the workpiece W using a solution such as a developer. For example, it may be configured to partially remove the resist film R to form a resist pattern (not shown). The thermal processing unit U2 of the processing module PM4 may be configured to perform, for example, a post-exposure bake (PEB) before the development process, a post-exposure bake (PB) after the development process, or the like.

[0041] 2 and 3, the processing block 5 includes a shelf unit 14 located near the carrier block 4. The shelf unit 14 extends in the vertical direction and includes a plurality of cells aligned in the vertical direction. A transport arm A6 is provided near the shelf unit 14. The transport arm A6 is configured to raise and lower the workpiece W between the cells of the shelf unit 14.

[0042] The processing block 5 includes a shelf unit 15 located near the interface block 6. The shelf unit 14 extends in the vertical direction and includes a plurality of cells lined up in the vertical direction.

[0043] The interface block 6 has a built-in transport arm A7 and is connected to the exposure apparatus 3. The transport arm A7 is configured to take out the workpiece W from the shelf unit 15 and pass it to the exposure apparatus 3, and to receive the workpiece W from the exposure apparatus 3 and return it to the shelf unit 15.

[0044] (liquid processing unit) Next, with reference to FIGS. 4 to 6, the liquid processing unit U1 of the processing module PM4 will be described in more detail. As shown in FIG. 4, the liquid processing unit U1 includes a substrate holding section 20 (substrate holding unit), a supply section 30, a supply section 40, a cover member 70, and a blower B within a housing H. An exhaust section V1 configured to exhaust gas from the housing H by operating based on a signal from the control device 100 is provided at the bottom of the housing H. The exhaust section V1 may be, for example, a damper whose exhaust volume can be adjusted according to its opening. By adjusting the exhaust volume from the housing H using the exhaust section V1, the temperature, pressure, humidity, and the like within the housing H can be controlled. The exhaust section V1 may be controlled to constantly exhaust the inside of the housing H during the liquid processing of the workpiece W.

[0045] <Substrate holding part> The substrate holding unit 20 is configured to hold and rotate the workpiece W. For example, the substrate holding unit 20 holds and rotates the workpiece W with its surface Wa facing upward. The substrate holding unit 20 includes a rotating unit 21, a shaft 22, and a holding unit 23.

[0046] The rotating unit 21 is configured to operate based on an operation signal from the control device 100 and rotate the shaft 22. The rotating unit 21 is a power source such as an electric motor. The holding unit 23 is provided at the tip of the shaft 22. The workpiece W is placed on the holding unit 23 with its surface Wa facing upward. The holding unit 23 is configured to hold the workpiece W approximately horizontally, for example, by suction. In other words, the substrate holding unit 20 rotates the workpiece W around a central axis (rotation axis) perpendicular to the surface Wa of the workpiece W while the workpiece W is in an approximately horizontal position. In this embodiment, the surface Wa of the workpiece W held by the substrate holding unit 20 is along the XY plane.

[0047] <Supply section> The supply unit 30 is configured to supply the processing liquid L1 to the surface Wa of the workpiece W. The processing liquid L1 may be, for example, a developing solution. The supply unit 30 includes a supply mechanism 31, a drive mechanism 32, and a nozzle 33.

[0048] The supply mechanism 31 is configured to send out the processing liquid L1 stored in a container (not shown) using a liquid sending mechanism (not shown), such as a pump, based on a signal from the control device 100. The drive mechanism 32 is configured to move the nozzle 33 in the vertical and horizontal directions based on a signal from the control device 100. The nozzle 33 is configured to discharge the processing liquid L1 supplied from the supply mechanism 31 onto the surface Wa of the workpiece W.

[0049] <Supply section> The supply unit 40 is configured to supply a processing liquid L2, a cooling gas G1 (gas), and a drying gas G2 (second gas) to the surface Wa of the workpiece W. The processing liquid L2 may be, for example, a rinse liquid (cleaning liquid). The cooling gas G1 and the drying gas G2 are not particularly limited as long as they are gases, but may be an inert gas (for example, nitrogen). The temperatures of the cooling gas G1 and the drying gas G2 may be approximately 20°C to 25°C. The supply unit 40 includes supply mechanisms 41A to 41C and a nozzle unit 43.

[0050] 4, the supply mechanism 41A is configured to send out a cooling gas G1 stored in a container (not shown) using a gas supply mechanism (not shown) such as a pump based on a signal from the control device 100. The supply mechanism 41B is configured to send out a drying gas G2 stored in a container (not shown) using a gas supply mechanism (not shown) such as a pump based on a signal from the control device 100. The supply mechanism 41C is configured to send out a processing liquid L2 stored in a container (not shown) using a liquid supply mechanism (not shown) such as a pump based on a signal from the control device 100.

[0051] Nozzle unit 43 is configured to discharge cooling gas G1, drying gas G2, and processing liquid L2 supplied from supply mechanisms 41A to 41C onto the surface Wa of workpiece W. As shown in Fig. 5, nozzle unit 43 includes a holding arm 44, a drying gas nozzle 45, a cooling gas nozzle 46, a processing liquid nozzle 47, and a drive unit 49 that moves these nozzles by moving holding arm 44. Each part of nozzle unit 43 will be described below.

[0052] [Holding arm] The holding arm 44 is configured to hold a drying gas nozzle 45, a cooling gas nozzle 46, and a processing liquid nozzle 47. The holding arm 44 includes, for example, a horizontal portion 44a extending horizontally (in the X-axis direction in the drawing) and a vertical portion 44b extending vertically. One end of the horizontal portion 44a may be connected to the drive unit 49 at a position that does not overlap with the workpiece W held by the substrate holder 20. The upper end of the vertical portion 44b is connected to the other end of the horizontal portion 44a. The vertical portion 44b extends downward (in the -Z direction) from the tip of the horizontal portion 44a toward the surface Wa of the workpiece W. The lower end of the vertical portion 44b and the surface Wa of the workpiece W are spaced apart in the vertical direction. A gas flow path 42a through which the cooling gas G1 supplied from the supply mechanism 41A flows may be provided inside the holding arm 44. Furthermore, a gas flow path 42b through which the dry gas G2 supplied from the supply mechanism 41B flows, and a processing liquid flow path 42c through which the processing liquid L2 supplied from the supply mechanism 41C flows may be provided inside the holding arm 44.

[0053] [Drying gas nozzle] The drying gas nozzle 45 (second gas nozzle) is configured to eject the drying gas G2 toward the surface Wa of the workpiece W. The drying gas nozzle 45 may eject the drying gas G2 from above the surface Wa in a direction approximately perpendicular to the surface Wa. When viewed from both the Y-axis direction and the X-axis direction, the ejection direction of the drying gas G2 from the drying gas nozzle 45 is approximately perpendicular to the surface Wa.

[0054] In the example shown in FIG. 5, the drying gas nozzle 45 is provided at the lower end of the vertical portion 44b of the holding arm 44. The drying gas nozzle 45 is provided with a gas flow path 45a extending in the vertical direction. The gas flow path 45a passes through the horizontal portion 44a of the holding arm 44 and is continuous with the gas flow path 42b, which extends to the lower end of the vertical portion 44b. The drying gas nozzle 45 includes an outlet 45b (second outlet) that discharges the drying gas G2, which is supplied to the gas flow path 45a via the gas flow path 42b, toward the surface Wa. The outlet 45b is provided, for example, in the lower end surface of the drying gas nozzle 45 and opens at that lower end surface. The shape (outline) of the outlet 45b may be circular when viewed from the discharge direction of the drying gas G2 (the Z-axis direction in the figure).

[0055] [Cooling gas nozzle] The cooling gas nozzle 46 is configured to discharge the cooling gas G1 toward the surface Wa of the workpiece W. The cooling gas nozzle 46 discharges the cooling gas G1 radially toward the surface Wa from above the surface Wa. For example, as shown in FIG. 6, the cooling gas nozzle 46 discharges the cooling gas G1 along a plurality of different angles relative to the surface Wa when viewed from the X-axis direction. The cooling gas nozzle 46 may discharge the cooling gas G1 uniformly within a radial discharge range. Alternatively, the cooling gas nozzle 46 may discharge the cooling gas G1 in one direction inclined relative to the surface Wa when viewed from the Y-axis direction.

[0056] In the example shown in FIGS. 5 and 6 , the cooling gas nozzle 46 is fixed to the lower end of the horizontal portion 44a of the holding arm 44, below the vertical portion 44b. The cooling gas nozzle 46 is provided with a gas flow path 51 that is continuous with the gas flow path 42a through which the cooling gas G1 supplied from the supply mechanism 41A flows. The gas flow path 42a opens at the lower end of the horizontal portion 44a of the holding arm 44. The gas flow path 51 is formed so as to be continuous with the opening at the lower end of the gas flow path 42a. The cooling gas nozzle 46 also includes an outlet 52 that discharges the cooling gas G1 flowing through the gas flow path 51 toward the surface Wa of the workpiece W. For example, the cooling gas nozzle 46 has a block-shaped main body 53 that defines the gas flow path 51 therein, and the outlet 52 opens on at least one surface included in the main body 53.

[0057] The gas flow path 51 includes a supply flow path 55 located on the upstream side and a discharge flow path 56 located on the downstream side. In this disclosure, the terms "upstream" and "downstream" are used with reference to the flow of gas or liquid. One upstream end of the supply flow path 55 is connected to a gas flow path 42a provided inside the horizontal portion 44a of the holding arm 44, and the other downstream end of the supply flow path 55 is connected to one upstream end of a discharge flow path 56. A discharge port 52 is provided at the other downstream end of the discharge flow path 56. The supply flow path 55 flows the cooling gas G1, for example, vertically downward. The discharge flow path 56 flows the cooling gas G1 along the extension direction of an inclined surface D0 inclined at a predetermined angle with respect to the surface Wa of the workpiece W, and the cooling gas G1 reaches the discharge port 52. The discharge flow path 56 flows the cooling gas G1 in one direction along the inclined surface D0 and then radially expands the flow direction of the cooling gas G1. Hereinafter, the direction in which the cooling gas G1 flows before spreading radially in the discharge flow path 56 will be referred to as the "direction D1." This direction D1 extends along the inclined surface D0. For example, the direction D1 is inclined with respect to the surface Wa of the workpiece W when viewed from the Y-axis direction.

[0058] The shape of the nozzle (particularly the shape of the gas flow path 51) through which the cooling gas nozzle 46 radially discharges the cooling gas G1 onto the surface Wa of the workpiece W will be described with reference to FIG. 7. FIG. 7 shows the tip portion (the portion near the discharge port 52) ​​of the cooling gas nozzle 46, and shows an example in which the tip portion is formed in a rectangular parallelepiped shape. Also shown are a front view, a bottom view, and a side view of the tip portion, with direction D1 aligned with the up-down direction of the paper or the direction perpendicular to the paper. The direction perpendicular to the Y-axis direction and direction D1 is direction D2 (see FIGS. 7(b) and 7(c)).

[0059] The discharge flow path 56 includes a first region 57 located on the upstream side and a second region 58 located on the downstream side. The first region 57 allows the cooling gas G1 supplied from the gas flow path (the gas flow path 42b and the supply flow path 55) located on the upstream side to flow along the direction D1. The first region 57 is composed of a pair of side surfaces 57a, 57b arranged opposite to each other and a pair of wall surfaces 57c, 57d arranged opposite to each other. The side surfaces 57a, 57b are located at both ends in the Y-axis direction, extend along the direction D1 and the direction D2, and are parallel to each other. The wall surfaces 57c, 57d extend along the Y-axis direction and the direction D1 and are parallel to each other. The wall surfaces 57c, 57d are arranged opposite to each other in the direction D2. The side surfaces 57a, 57b and the wall surfaces 57c, 57d form the first region 57. For example, the cross-sectional shape of the first region 57 is a rectangle whose longitudinal direction is the Y-axis direction. The cross-sectional area of ​​the first region 57 in the Y-axis direction is substantially constant regardless of the direction D1. In such a first region 57, the cooling gas G1 flows along the direction D1.

[0060] The second region 58 guides the cooling gas G1 supplied from the first region 57 to the outlet 52. The second region 58 is formed to radially expand the cooling gas G1 flowing through the first region 57 in the direction D1 in the Y-axis direction. The second region 58 is composed of a pair of inclined surfaces 58a and 58b arranged opposite each other and a pair of wall surfaces 58c and 58d arranged opposite each other. The wall surfaces 58c and 58d are continuous with the wall surfaces 57c and 57d, respectively, and extend in the Y-axis direction and the direction D1, and are parallel to each other. Therefore, the width of the second region 58 in the direction D2 is the same as that of the first region 57 (see FIG. 7(c)). The extending directions of the wall surfaces 57c and 57d and the wall surfaces 58c and 58d correspond to the extending direction of the inclined surface D0.

[0061] The inclined surfaces 58a and 58b are provided at both ends in the Y-axis direction of the second region 58. One upstream end of the inclined surfaces 58a and 58b is connected to the side surfaces 57a and 57b, respectively, and one downstream end of the inclined surfaces 58a and 58b is connected to the discharge port 52 (both ends of the discharge port 52 in the Y-axis direction).

[0062] Each of the inclined surfaces 58a, 58b is inclined with respect to the direction D1. Specifically, the inclined surface 58a is inclined outward with respect to the direction D1 so that the distance between the inclined surface 58a and the inclined surface 58b increases as the inclined surface 58a approaches the discharge port 52. The inclined surface 58b is inclined outward with respect to the direction D1 so that the distance between the inclined surface 58a and the inclined surface 58b increases as the inclined surface 58a approaches the discharge port 52. Each of the inclined surfaces 58a, 58b is inclined in a direction (outward) away from the axis Ax of the cooling gas nozzle 46 as it moves from the connection portion with the side surfaces 57a, 57b toward the discharge port 52. The axis Ax of the cooling gas nozzle 46 is a virtual axis that extends along the direction D1 and passes through the center of the discharge port 52 when viewed from the direction D1. As described above, at least the inclined surfaces 58a, 58b of the second region 58 are formed in an inverted tapered shape in which the distance between them increases as the inclined surface 58a approaches the discharge port 52. As a result, the width of the second region 58 (discharge flow path 56) in the Y-axis direction increases toward the discharge port 52 so that the cooling gas G1 is discharged radially from the discharge port 52 in the Y-axis direction. The inclination angles (inclination angles with respect to the direction D1) of the inclined surfaces 58a, 58b may be approximately the same.

[0063] The outlet 52 of the cooling gas nozzle 46 is formed to extend in one direction along the surface Wa. In the present disclosure, a shape extending in one direction means a shape in which the width in one direction is larger than the width in a direction perpendicular to the one direction. In one example, the outlet 52 has a shape in which one direction is the longitudinal direction (major axis) and the direction perpendicular to the one direction is the lateral direction (minor axis). Specifically, the outlet 52 has a rectangular shape, a rounded rectangle with rounded ends in the longitudinal direction, an ellipse, or a shape similar to these. For example, as shown in FIGS. 7(a) to 7(c), the outlet 52 has a shape extending in the Y-axis direction (first direction). In the example shown in FIGS. 7(a) to 7(c), the outlet 52 is a rectangular slit extending at least along the Y-axis direction. As an example, the ratio of the length of the outlet 52 in one direction (Y-axis direction) to the length in a direction perpendicular to the one direction (direction D2 perpendicular to the Y-axis direction in FIG. 7(b)) is set to 100:1 to 10:1. The cooling gas G1 is sent to the outlet 52 from the discharge flow path 56 as described above.

[0064] In the cooling gas nozzle 46 illustrated in Figures 7(a) to 7(c), the discharge port 52 is formed so as to be visible when viewed from direction D1 (when viewed from downstream to upstream of the gas flowing along direction D1). For example, as shown in Figures 7(b) and 7(c), the main body 53 of the cooling gas nozzle 46 may be provided with a bottom surface 61 that faces the surface Wa of the workpiece W. In this case, the discharge port 52 is provided on the bottom surface 61. The discharge port 52 is formed so as to extend from one end to the other end of the bottom surface 61 in the Y-axis direction when viewed from direction D1.

[0065] The discharge port 52 may be formed so that both ends of the discharge port 52 in the Y-axis direction are visible when viewed from the Y-axis direction. Explaining in more detail, the discharge port 52 is formed so that portions 52a and 52b of the discharge port 52 connected to the inclined surfaces 58a and 58b of the discharge flow path 56 (second region 58), respectively, are visible when viewed from the Y-axis direction. Note that "the portions 52a and 52b are visible when viewed from the Y-axis direction" means that the portion 52a is visible from one direction in the Y-axis direction and the portion 52b is visible from the other direction in the Y-axis direction.

[0066] In the example shown in FIGS. 7(a) to 7(c), a surface including the opening edge of the discharge port 52 (hereinafter referred to as the "opening surface") includes an opening bottom surface perpendicular to the direction D1 and a pair of opening side surfaces connected to the opening bottom surface and facing each other in the Y-axis direction. The opening edge of the discharge port 52 is a ridge line connecting the outer surface of the main body 53 and the discharge port 52 (the end of the discharge flow path 56), and the opening surface is a virtual surface including the entire ridge line. The discharge port 52 of the cooling gas nozzle 46 is open, for example, not only on the bottom surface 61 but also on side surfaces 62a and 62b connected to the bottom surface 61 and facing oppositely to each other in the Y-axis direction. In this case, the portion of the discharge flow path 56 downstream of the inclined surfaces 58a and 58b penetrates the main body 53 in the Y-axis direction. For example, on each of the side surfaces 62a and 62b, the discharge port 52 is formed to extend along the direction D1 from the connection portion with the bottom surface 61.

[0067] With the above configuration, the cooling gas G1 that flows through the gas flow path 51 of the cooling gas nozzle 46 passes through the first region 57 and the second region 58 of the discharge flow path 56 and is then discharged radially from the discharge port 52. As a result, the cooling gas G1 is discharged onto the surface Wa from above the surface Wa. As an example, as shown in FIG. 6, the cooling gas nozzle 46 discharges the cooling gas G1 in directions specified by a plurality of angles within a predetermined angle range (for example, −45° to +45°) with respect to the axis Ax.

[0068] The shape of the discharge port 52 of the cooling gas nozzle 46 is not limited to the above example. The opening surface including the opening edge of the discharge port 52 may be formed so that the central portion of the opening surface in the Y-axis direction protrudes toward the surface Wa. More specifically, the central portion of the opening surface in the Y-axis direction may protrude toward the surface Wa compared to both end portions of the opening surface in the Y-axis direction. In this case, both end portions of the discharge port 52 in the Y-axis direction are visible when viewed from the Y-axis direction.

[0069] For example, as shown in FIGS. 8(a) to 8(c), the bottom surface 61 of the main body 53 is curved such that its central portion in the Y-axis direction protrudes from the ends of the inclined surfaces 58a and 58b of the second region 58 toward the surface Wa. In this example, the opening surface including the opening edge of the discharge port 52 is curved such that its central portion in the Y-axis direction protrudes toward the surface Wa. One end of the bottom surface 61 in the Y-axis direction (portion 52a of the discharge port 52) ​​is connected to the inclined surface 58a, and the other end of the bottom surface 61 in the Y-axis direction (portion 52b of the discharge port 52) ​​is connected to the inclined surface 58b. In this case, too, portions 52a and 52b of the discharge port 52 connected to the inclined surfaces 58a and 58b are visible when viewed from the Y-axis direction. The portion of the discharge flow path 56 downstream of the inclined surfaces 58a and 58b penetrates the main body 53 in the Y-axis direction. Instead of being curved, the opening surface (bottom surface 61 of main body portion 53) may be formed in a trapezoidal shape when viewed in the X-axis direction. Even in the case of a trapezoidal shape, the central portion of the opening surface in the Y-axis direction (the portion corresponding to the upper base) protrudes toward the surface Wa compared to both end portions of the opening surface in the Y-axis direction.

[0070] The outlet 52 may be formed so that both ends of the outlet 52 in the Y-axis direction are not visible from either direction in the Y-axis direction. For example, as shown in FIGS. 9(a) to 9(c), the outlet 52 may be open at the bottom surface 61, but not at the side surfaces 62a and 62b connected to the bottom surface 61. The portions of the outlet 52 connected to the inclined surfaces 58a and 58b (portions 52a and 52b) are not visible when viewed from the Y-axis direction, but are visible when viewed from direction D1. In this case, the distance between both ends of the outlet 52 in the Y-axis direction is smaller than the distance of the bottom surface 61 in the Y-axis direction. Note that the width of the outlet 52 shown in FIG. 8 (the outlet 52 having a curved opening) in the Y-axis direction may be smaller than the length of the curved bottom surface 61 in the Y-axis direction.

[0071] 7 to 9, the discharge port 52 and the discharge flow path 56 (their three-dimensional shapes) are symmetrical with respect to a plane (XZ plane) that passes through the axis Ax and is perpendicular to the direction in which the discharge port 52 extends. The cooling gas G1 discharged from the cooling gas nozzle 46 having the discharge port 52 and the discharge flow path 56 is discharged so as to spread out toward both sides of the axis Ax in the Y-axis direction. As a result, the cooling gas G1 is discharged radially from the cooling gas nozzle 46 (discharge port 52), and reaches an area on the surface Wa of the workpiece W that extends in the Y-axis direction.

[0072] As shown in FIG. 6, by discharging the cooling gas G1 radially, the width of the region on the surface Wa where the cooling gas G1 reaches (hereinafter referred to as the "reach region AR") in the Y-axis direction becomes larger than the width of the discharge port 52 in the Y-axis direction. In the Y-axis direction, the distance between one end of the reach region AR and the axis Ax is larger than the distance between one end of the discharge port 52 and the axis Ax, and the distance between the other end of the reach region AR and the axis Ax is larger than the distance between the other end of the discharge port 52 and the axis Ax. The width of the reach region AR in the Y-axis direction substantially coincides with the distance between the point where an imaginary line ILa extending along the inclined surface 58a intersects with the surface Wa and the point where an imaginary line ILb extending along the inclined surface 58b intersects with the surface Wa. The width of the reach region AR in the Y-axis direction may be smaller than the radius of the circular workpiece W. In one example, the width of the arrival area AR may be 0.4 to 0.8 times the radius of the workpiece W, or 0.5 to 0.7 times, or 0.55 to 0.65 times.

[0073] 5, the drying gas nozzle 45 and the cooling gas nozzle 46 are connected to each other via the holding arm 44, so that when the holding arm 44 moves, the drying gas nozzle 45 and the cooling gas nozzle 46 move together. As shown in FIG. 5, the drying gas nozzle 45 and the cooling gas nozzle 46 are disposed at different positions in the X-axis direction (second direction). The drying gas nozzle 45 and the cooling gas nozzle 46 are configured so that, as viewed from the Y-axis direction, the distance in the X-axis direction between the position on the surface Wa of the workpiece W where the drying gas G2 from the drying gas nozzle 45 reaches and the position on the surface Wa where the cooling gas G1 from the cooling gas nozzle 46 reaches (the arrival area AR) is shorter than the distance in the X-axis direction between the outlet 45b of the drying gas nozzle 45 and the outlet 52 of the cooling gas nozzle 46.

[0074] In one example, as viewed from the Y-axis direction, an imaginary line IL1 extending in the discharge direction of the cooling gas G1 from the cooling gas nozzle 46 and an imaginary line IL2 extending in the discharge direction of the drying gas G2 from the drying gas nozzle 45 intersect near the surface Wa (for example, on the surface Wa). As a result, when the nozzle unit 43 is located at a fixed position and the drying gas G2 and the cooling gas G1 are discharged from the drying gas nozzle 45 and the cooling gas nozzle 46, respectively, the arrival area (arrival position) of the surface Wa of the drying gas G2 and the arrival area AR of the surface Wa of the cooling gas G1 from the cooling gas nozzle 46 overlap each other as viewed from the Y-axis direction.

[0075] As shown in FIG. 6 , the drying gas nozzle 45 is disposed so as to overlap with the cooling gas nozzle 46 when viewed from the X-axis direction. For example, the position of the drying gas nozzle 45 in the Y-axis direction substantially coincides with the center (axis Ax) of the cooling gas nozzle 46 in the Y-axis direction. In this case, when viewed from the X-axis direction, the arrival region (arrival position) of the surface Wa of the drying gas G2 from the drying gas nozzle 45 substantially coincides with the center position of the arrival region AR of the surface Wa of the cooling gas G1 from the cooling gas nozzle 46. Note that the position of the drying gas nozzle 45 in the Y-axis direction may be different from the center (axis Ax) of the cooling gas nozzle 46 in the Y-axis direction. In this case, when viewed from the X-axis direction, the arrival region (arrival position) of the surface Wa of the drying gas G2 from the drying gas nozzle 45 deviates from the center position of the arrival region AR of the surface Wa of the cooling gas G1 from the cooling gas nozzle 46.

[0076] The cooling gas nozzle 46 and the drying gas nozzle 45 may be configured so that the flow rate of the cooling gas G1 discharged from the outlet 52 of the cooling gas nozzle 46 is smaller than the flow rate of the drying gas G2 discharged from the outlet 45b of the drying gas nozzle 45. For example, the cooling gas nozzle 46 and the drying gas nozzle 45 are each configured so that gases are supplied to them at approximately the same flow rate (flow rate per unit time), and the opening area of ​​the outlet 52 is larger than the opening area of ​​the outlet 45b. Alternatively, the supply mechanisms 41A and 41B are controlled by the control device 100 so that the flow rate of the cooling gas G1 supplied from the supply mechanism 41A to the cooling gas nozzle 46 is smaller than the flow rate of the drying gas G2 supplied from the supply mechanism 41B to the drying gas nozzle 45.

[0077] The cooling gas nozzle 46 and the drying gas nozzle 45 may be arranged so that the cooling gas G1 can be easily diffused after being discharged. For example, the cooling gas nozzle 46 and the drying gas nozzle 45 may be arranged so that, as viewed from the direction in which the discharge port 52 extends, the distance between the discharge port 52 and the surface Wa along the discharge direction of the cooling gas G1 (along the imaginary line IL1 in FIG. 5) is longer than the distance between the discharge port 45b and the surface Wa along the discharge direction of the drying gas G2 (along the imaginary line IL2 in FIG. 5). Even when gases are supplied from two types of gas nozzles having different purposes at approximately the same flow rate (flow rate per unit time), the pressure of the gas applied to the surface Wa (more specifically, the liquid surface of the processing liquid on the surface Wa) may be adjusted to a degree appropriate for the processing purpose depending on the configuration (arrangement) of the two gas nozzles. Specifically, when supplying the cooling gas G1, by increasing the distance between the nozzle and the surface, the pressure of the cooling gas G1 can be weakened to a level that does not disturb the liquid surface of the processing liquid or blow away the processing liquid so as not to expose the surface Wa of the workpiece W. On the other hand, when supplying the drying gas G2, by decreasing the distance between the nozzle and the surface, the pressure of the drying gas G2 can be strengthened to a level that creates a flow in the processing liquid or blows away the processing liquid so as to form a dry region D (details will be described later) in which the surface Wa of the workpiece W is exposed.

[0078] When the same type of gas is used for the cooling gas G1 and the drying gas G2, the gases may share a common supply source. Specifically, one flow path connected to one gas supply source may be branched into two flow paths. Each of the two flow paths may be provided with a valve that can be switched between an open and closed state by the control device 100. One flow path may be connected to the gas flow path 42a that guides the cooling gas G1 to the outlet 52 of the cooling gas nozzle 46, and the other flow path may be connected to the gas flow path 42b that guides the drying gas G2 to the outlet 45b of the drying gas nozzle 45.

[0079] [Processing liquid nozzle] The processing liquid nozzle 47 is configured to eject the processing liquid L2 toward the surface Wa of the workpiece W. The processing liquid nozzle 47 ejects the processing liquid L2, for example, from above the surface Wa in a direction different from the perpendicular to the surface Wa. For example, when viewed from the Y-axis direction, the ejection direction of the processing liquid L2 from the processing liquid nozzle 47 is inclined with respect to the surface Wa, and when viewed from the X-axis direction, the ejection direction is approximately perpendicular to the surface Wa.

[0080] In the example shown in FIG. 5 , the processing liquid nozzle 47 is connected to the holding arm 44 via a holder 48. The holder 48 is connected to a side surface of the vertical portion 44b of the holding arm 44 and holds the processing liquid nozzle 47 at the bottom surface closest to the direction along the surface Wa. A processing liquid flow path 42c, through which the processing liquid L2 supplied from the supply mechanism 41C flows, is connected to the processing liquid nozzle 47. The processing liquid flow path 42c may be provided, for example, inside the horizontal portion 44a of the holding arm 44, outside the holding arm 44, or inside the holder 48. When the processing liquid flow path 42c is provided outside the holding arm 44, a covering material or the like may be provided to cover the processing liquid flow path 42c. The processing liquid nozzle 47 is provided with a processing liquid flow path 47a extending in the discharge direction of the processing liquid L2. The processing liquid flow path 47a is continuous with the end of the processing liquid flow path 42c provided in the holder 48. Furthermore, the processing liquid nozzle 47 includes a discharge port 47b (third discharge port) that discharges the processing liquid L2 supplied via the processing liquid flow path 47a toward the surface Wa. The discharge port 47b is provided, for example, in the lower end surface of the processing liquid nozzle 47 and opens at the lower end surface. The shape (outline) of the discharge port 47b may be circular when viewed from the discharge direction of the processing liquid L2.

[0081] The processing liquid nozzle 47 and the cooling gas nozzle 46 are connected to each other via the holding arm 44 and the holder 48, and therefore, when the holding arm 44 moves, the processing liquid nozzle 47 and the cooling gas nozzle 46 move together. In this embodiment, the drying gas nozzle 45, the cooling gas nozzle 46, and the processing liquid nozzle 47 are connected to each other via the holding arm 44, etc., and therefore, as the holding arm 44 moves, these three nozzles move together. As shown in FIG. 5 , the cooling gas nozzle 46, the drying gas nozzle 45, and the processing liquid nozzle 47 are arranged at different positions in the X-axis direction. For example, when viewed from the Y-axis direction, the cooling gas nozzle 46, the drying gas nozzle 45, and the processing liquid nozzle 47 are arranged in this order.

[0082] The processing liquid nozzle 47 and the cooling gas nozzle 46 are configured so that, as viewed from the Y-axis direction, the distance in the X-axis direction between the arrival position on the surface Wa of the workpiece W of the processing liquid L2 from the processing liquid nozzle 47 and the arrival position on the surface Wa of the cooling gas G1 from the cooling gas nozzle 46 (arrival area AR) is smaller than the distance in the X-axis direction between the outlet 47b of the processing liquid nozzle 47 and the outlet 52 of the cooling gas nozzle 46. Note that a similar relationship between the arrival position and the outlet is also established between the processing liquid nozzle 47 and the drying gas nozzle 45.

[0083] In one example, as viewed from the Y-axis direction, an imaginary line IL3 extending in the discharge direction of the processing liquid L2 from the processing liquid nozzle 47 and an imaginary line IL1 extending in the discharge direction of the cooling gas G1 from the cooling gas nozzle 46 intersect near the surface Wa (e.g., on the surface Wa). As a result, when the nozzle unit 43 is located at a fixed position, as viewed from the Y-axis direction, the arrival area (arrival position) of the processing liquid L2 from the processing liquid nozzle 47 and the arrival area AR of the surface Wa of the cooling gas G1 from the cooling gas nozzle 46 may overlap each other. In this embodiment, the nozzle unit 43 is configured such that, as viewed from the Y-axis direction, in addition to the imaginary lines IL1 and IL3, an imaginary line IL2 extending in the discharge direction of the drying gas G2 from the drying gas nozzle 45 intersect each other at a point on the surface Wa.

[0084] The drying gas nozzle 45 and the processing liquid nozzle 47 are configured so that, as viewed from the Y-axis direction, the inclination of the discharge direction of the processing liquid L2 from the processing liquid nozzle 47 relative to the surface Wa is smaller than the inclination of the discharge direction of the drying gas G2 from the drying gas nozzle 45 relative to the surface Wa. For example, as viewed from the Y-axis direction, the angle (an angle of 90 degrees or less) formed between the surface Wa and an imaginary line IL3 extending in the discharge direction of the processing liquid L2 is smaller than the angle (an angle of 90 degrees or less) formed between the surface Wa and an imaginary line IL2 extending in the discharge direction of the drying gas G2. Note that a similar magnitude relationship also holds true for the inclination of the discharge direction of the drying gas G2 and the discharge direction of the cooling gas G1 from the cooling gas nozzle 46 relative to the surface Wa.

[0085] 6, the processing liquid nozzle 47 and the drying gas nozzle 45 may be disposed at substantially the same position in the Y-axis direction. As viewed from the X-axis direction, the reach area (reaching position) on the surface Wa of the processing liquid L2 from the processing liquid nozzle 47 and the reach area (reaching position) on the surface Wa of the drying gas G2 from the drying gas nozzle 45 may be substantially the same. Unlike the example shown in FIG. 6, the processing liquid nozzle 47 and the drying gas nozzle 45 may be disposed at different positions in the Y-axis direction. As viewed from the X-axis direction, the reach area (reaching position) on the surface Wa of the processing liquid L2 from the processing liquid nozzle 47 and the reach area (reaching position) on the surface Wa of the drying gas G2 from the drying gas nozzle 45 may be different.

[0086] Similar to the drying gas nozzle 45, the processing liquid nozzle 47 may be disposed so as to overlap with the cooling gas nozzle 46 when viewed from the X-axis direction. For example, the position of the processing liquid nozzle 47 in the Y-axis direction substantially coincides with the center (axis Ax) of the cooling gas nozzle 46 in the Y-axis direction. In this case, when viewed from the X-axis direction, the reach region (reaching position) on the surface Wa of the processing liquid L2 from the processing liquid nozzle 47 substantially coincides with the center of the reach region AR of the surface Wa of the cooling gas G1 from the cooling gas nozzle 46. Note that the position of the processing liquid nozzle 47 in the Y-axis direction may be different from the center (axis Ax) of the cooling gas nozzle 46 in the Y-axis direction. In this case, when viewed from the X-axis direction, the reach region (reaching position) on the surface Wa of the processing liquid L2 from the processing liquid nozzle 47 deviates from the center of the reach region AR of the surface Wa of the cooling gas G1 from the cooling gas nozzle 46.

[0087] The distance (shortest distance) in the Z-axis direction between the discharge port 45b of the drying gas nozzle 45 and the surface Wa may be greater than the distance (shortest distance) in the Z-axis direction between the discharge port 47b of the processing liquid nozzle 47 and the surface Wa. The distance (shortest distance) in the Z-axis direction between the discharge port 45b and the surface Wa may be greater than the distance (shortest distance) in the Z-axis direction between the discharge port 52 of the cooling gas nozzle 46 and the surface Wa. The above-described arrangement of the three nozzles is an example, and the three nozzles may be arranged in any manner.

[0088] [Drive unit] The drive unit 49 is configured to move the holding arm 44 in the height direction and horizontal direction (direction along the surface Wa of the workpiece W) based on a signal from the control device 100. The drive unit 49 is connected, for example, to the base end of the horizontal portion 44a of the holding arm 44 as described above. The drive unit 49 may include a linear actuator that displaces the holding arm 44 in the direction in which the outlet 52 of the cooling gas nozzle 46 extends (Y-axis direction), and an elevation actuator that displaces the holding arm 44 in the Z-axis direction. Note that the drive unit 49 does not necessarily have to include a linear actuator that displaces the holding arm 44 in the X-axis direction.

[0089] As the driving unit 49 displaces the holding arm 44, the drying gas nozzle 45, the cooling gas nozzle 46, and the processing liquid nozzle 47 all move. In one example, the driving unit 49 displaces the holding arm 44 horizontally (in the Y-axis direction) so that the direction in which the arrival area AR (destination arrival area) of the cooling gas G1 from the cooling gas nozzle 46 extends is along the radial direction of the workpiece W held by the substrate holder 20. In this case, the arrival position (destination arrival position) of the cooling gas G1 from the drying gas nozzle 45 and the arrival position (destination arrival position) of the processing liquid L2 from the processing liquid nozzle 47 also displace in the radial direction of the workpiece W.

[0090] <Cover material> Returning to FIG. 4, the cover member 70 is provided around the substrate holding part 20. The cover member 70 includes a cup body 71, a drainage outlet 72, and an exhaust outlet 73. The cup body 71 is configured as a liquid collection container that receives the processing liquids L1, L2 supplied to the workpiece W for processing the workpiece W. The drainage outlet 72 is provided at the bottom of the cup body 71, and is configured to discharge the waste liquid collected by the cup body 71 to the outside of the liquid processing unit U1.

[0091] The exhaust port 73 is provided at the bottom of the cup body 71. The exhaust port 73 is provided with an exhaust section V2 configured to exhaust gas from the cup body 71 by operating based on a signal from the control device 100. Therefore, the downward flow (down blow) that flows around the workpiece W is discharged to the outside of the liquid processing unit U1 through the exhaust port 73 and the exhaust section V2. The exhaust section V2 may be, for example, a damper whose exhaust volume can be adjusted according to its opening. By adjusting the exhaust volume from the cup body 71 using the exhaust section V2, the temperature, pressure, humidity, etc. inside the cup body 71 can be controlled.

[0092] Blower B is disposed above substrate holder 20 and cover member 70 in liquid processing unit U1. Blower B is configured to form a downward flow toward cover member 70 based on a signal from control device 100. Blower B may be controlled to constantly form a downward flow during liquid processing of workpieces W.

[0093] (Control device) The control device 100 is configured to partially or entirely control the elements of the coating and developing apparatus 2. The control device 100 controls a liquid processing unit U1 that includes at least a nozzle unit 43 and a substrate holder 20. As shown in FIG. 10 , the control device 100 has functional modules including a reading unit M1, a memory unit M2, a processing unit M3, and an instruction unit M4. These functional modules merely divide the functions of the control device 100 into multiple modules for convenience's sake, and do not necessarily mean that the hardware constituting the control device 100 is divided into such modules. Each functional module is not limited to being realized by executing a program, but may also be realized by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates such circuits.

[0094] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each unit of the coating and developing apparatus 2. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

[0095] The storage unit M2 is configured to store various data. For example, the storage unit M2 may store a program read from the recording medium RM by the reading unit M1, setting data input by an operator via an external input device (not shown), etc. The program may be configured to operate each part of the coating and developing apparatus 2.

[0096] The processing unit M3 is configured to process various data, and may generate signals for operating the liquid processing unit U1, the heat-processing unit U2, etc., based on the various data stored in the memory unit M2, for example.

[0097] The instruction unit M4 is configured to transmit the operation signals generated in the processing unit M3 to various devices.

[0098] The hardware of the control device 100 may be configured, for example, by one or more control computers. As shown in FIG. 11, the control device 100 includes a circuit C1 as a hardware configuration. The circuit C1 may be configured by electrical circuitry. The circuit C1 may include a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6.

[0099] The processor C2 executes programs in cooperation with at least one of the memory C3 and the storage C4, and performs input and output of signals via the input / output port C6, thereby configuring the above-mentioned functional modules. The memory C3 and the storage C4 function as a memory unit M2. The driver C5 is a circuit that drives each of the various devices in the coating and developing apparatus 2. The input / output port C6 inputs and outputs signals between the driver C5 and the various devices in the coating and developing apparatus 2 (e.g., the liquid processing unit U1, the heat processing unit U2, etc.).

[0100] The coating and developing apparatus 2 may include one control device 100, or may include a controller group (control unit) configured with multiple control devices 100. When the coating and developing apparatus 2 includes a controller group, each of the above-mentioned functional modules may be realized by one control device 100, or may be realized by a combination of two or more control devices 100. When the control device 100 is configured with multiple computers (circuits C1), each of the above-mentioned functional modules may be realized by one computer (circuit C1), or may be realized by a combination of two or more computers (circuits C1). The control device 100 may have multiple processors C2. In this case, each of the above-mentioned functional modules may be realized by one processor C2, or may be realized by a combination of two or more processors C2.

[0101] [Substrate processing method] Next, a liquid processing method for a workpiece W will be described as an example of a substrate processing method with reference to Figures 12 to 15. Figure 12 is a flow chart showing an example of the liquid processing method.

[0102] First, the control device 100 controls each part of the coating and developing apparatus 2 to process the workpiece W in the processing modules PM1 to PM3, thereby causing the coating and developing apparatus 2 to form a resist film R on the surface Wa of the workpiece W (step S11). Next, the control device 100 controls each part of the coating and developing apparatus 2 to transport the workpiece W from the processing module PM3 to the exposure device 3 by the transport arm A7 or the like. Next, a control device different from the control device 100 controls the exposure device 3 to expose the resist film R formed on the surface Wa of the workpiece W with a predetermined pattern by the exposure device 3 (step S12).

[0103] Next, the control device 100 controls each part of the coating and developing apparatus 2 to transport the workpiece W from the exposure device 3 to the liquid processing unit U1 of the processing module PM4 by the transport arm A5 or the like. As a result, the workpiece W is held by the substrate holding part 20 with its surface Wa facing upward. Next, the control device 100 controls the supply part 30 to supply the processing liquid L1 (developer) to the surface Wa of the workpiece W, i.e., the upper surface of the resist film R (step S13).

[0104] In step S13, the control device 100 may control the supply unit 30 to supply the processing liquid L1 from the nozzle 33 toward the surface Wa of the workpiece W while horizontally moving the nozzle 33 above the non-rotating workpiece W. In this case, as illustrated in FIG. 13( a), the processing liquid L1 is supplied sequentially from one end of the workpiece W to the other. Alternatively, the control device 100 may control the substrate holding unit 20 and the supply unit 30 to supply the processing liquid L1 from the nozzle 33 toward the surface Wa of the workpiece W while rotating the workpiece W by the substrate holding unit 20 and horizontally moving the nozzle 33 above the workpiece W. In this case, the processing liquid L1 is supplied in a spiral pattern from the center to the periphery of the workpiece W or from the periphery to the center of the workpiece W. Step S13 creates a state in which the processing liquid L1 remains so as to cover the entire upper surface of the resist film R on the surface Wa of the workpiece W.

[0105] Next, the control device 100 controls the supply unit 40 to supply the cooling gas G1 from the outlet 52 of the cooling gas nozzle 46 to the surface Wa of the workpiece W, i.e., the upper surface of the processing liquid L1 (step S14). In step S14, the control device 100 may control the cooling gas nozzle 46 to discharge the cooling gas G1 from the outlet 47b toward the surface Wa while rotating the workpiece W using the substrate holder 20. At this time, it is preferable that the processing liquid L1 on the surface Wa of the workpiece W is not blown away by the cooling gas G1. In other words, it is preferable that the surface Wa of the workpiece W, to which the processing liquid L1 is being supplied, is not exposed by the spray of the cooling gas G1. By supplying the cooling gas G1 while the processing liquid L1 remains on the surface Wa of the workpiece W, processing with the processing liquid L1 can be continued while adjusting the surface temperature of the workpiece W by supplying the cooling gas G1. More specifically, the temperature distribution on the surface Wa of the workpiece W is adjusted by adjusting the temperature of a portion of the surface Wa of the workpiece W to which the cooling gas G1 is supplied.

[0106] As shown in FIG. 13(b), the cooling gas G1 is sprayed onto a region including at least the center of the surface Wa of the workpiece W. For example, as shown in FIG. 14, the control device 100 uses the drive unit 49 of the nozzle unit 43 to position the cooling gas nozzle 46 so that the arrival region AR of the cooling gas G1 from the cooling gas nozzle 46 is aligned with the radial direction of the workpiece W and one end of the arrival region AR in the longitudinal direction (the direction in which the outlet 52 extends) substantially coincides with the center CP of the workpiece W. Hereinafter, the position of the cooling gas nozzle 46 positioned as described above will be referred to as the "discharge position." With the cooling gas nozzle 46 positioned at the discharge position, the control device 100 rotates the workpiece W using the substrate holding unit 20. Then, while rotating the workpiece W using the substrate holding unit 20, the control device 100 controls the supply unit 40 so that the cooling gas G1 is discharged from the outlet 52 of the cooling gas nozzle 46.

[0107] When the cooling gas G1 from the outlet 52 of the cooling gas nozzle 46 at the above-mentioned outlet position is discharged onto the rotating workpiece W, the direction in which the reach area AR of the cooling gas G1 on the surface Wa extends is perpendicular to the rotation direction of the workpiece W (direction R1 or direction R2 shown in the figure). In this case, when viewed from above (when viewed from the Z-axis direction), the direction from the outlet 52 toward the reach area AR may be the same as the rotation direction of the workpiece W (the workpiece W may be rotated in direction R1). When viewed from above, the direction from the outlet 52 toward the reach area AR may be the opposite as the rotation direction of the workpiece W (the workpiece W may be rotated in direction R2).

[0108] As described above, by discharging the cooling gas G1 from the cooling gas nozzle 46, the cooling gas G1 is supplied onto the surface Wa in a range (the central portion CR in the figure) having a radius approximately equal to the width in the longitudinal direction of the reach area AR. Note that, when the cooling gas nozzle 46 is disposed at the discharge position, it is sufficient that the direction in which the reach area AR of the cooling gas G1 from the discharge port 52 extends is not perpendicular to the rotation direction of the workpiece W but intersects with it. In other words, it is sufficient that the direction in which the reach area AR extends is not perpendicular to the radial direction of the workpiece W.

[0109] The spraying of the cooling gas G1 onto the processing liquid L1 may be continued during the development period of the resist film R. The spraying of the cooling gas G1 onto the processing liquid L1 may be continued, for example, from when the processing liquid L1 is supplied to the surface Wa of the workpiece W until development is completed or until a subsequent process is started. In step S14, the control device 100 may control the exhaust unit V2 to supply the cooling gas G1 onto the surface Wa of the workpiece W while exhaust from within the cup body 71 is stopped or while exhaust from within the cup body 71 is continued.

[0110] Next, the control device 100 controls the substrate holding unit 20 and the supply unit 40 to supply the processing liquid L2 (rinse liquid) from the processing liquid nozzle 47 to the surface Wa of the rotating workpiece W, i.e., the upper surface of the processing liquid L1 (step S15). As a result, as shown in FIG. 15(a), the dissolved resist of the resist film R that has dissolved by reaction with the processing liquid L1 is washed away (discharged) from the surface Wa of the workpiece W by the processing liquid L2 together with the processing liquid L1. In this way, a resist pattern RP is formed on the surface Wa of the workpiece W.

[0111] Before starting to discharge the processing liquid L2 in step S15, the control device 100 causes the drive unit 49 to displace the processing liquid nozzle 47 (holding arm 44) so ​​that the area on the surface Wa of the processing liquid L2 reached by the processing liquid nozzle 47 is positioned at the center CP of the workpiece W. In this embodiment, the drive unit 49 displaces the processing liquid nozzle 47 in the radial direction of the workpiece W, without displacing the processing liquid nozzle 47 in a direction intersecting the radial direction of the workpiece W. In step S15, the control device 100 may control the exhaust unit V2 to cause the supply unit 40 to supply the processing liquid L2 to the surface Wa of the workpiece W while continuing to exhaust air from inside the cup body 71. The amount of air exhausted from inside the cup body 71 in step S15 may be set to be greater than the amount of air exhausted from inside the cup body 71 in step S14.

[0112] Next, the control device 100 controls the supply unit 40 to supply the drying gas G2 from the drying gas nozzle 45 to the surface Wa of the rotating workpiece W, i.e., to the upper surface of the processing liquid L2 remaining on the surface Wa (step S16). At the start of ejection of the drying gas G2 in step S16, the control device 100 may control the drive unit 49 to move the holding arm 44 horizontally (in the Y-axis direction) so that the arrival position of the drying gas G2 substantially coincides with the center CP of the workpiece W. If the arrival position of the processing liquid L2 from the processing liquid nozzle 47 on the surface Wa and the arrival position of the drying gas G2 from the drying gas nozzle 45 on the surface Wa substantially coincide with each other in the Y-axis direction, the movement of the holding arm 44 may be omitted. In one example of the arrangement relationship between the drying gas nozzle 45 and the processing liquid nozzle 47 described above, the arrival position of the drying gas G2 and the arrival position of the processing liquid L2 substantially coincide with each other at least in the X-axis direction (see FIG. 5). Therefore, there is no need to change the position of the holding arm 44 at least in the X-axis direction every time the supply of the processing liquid L2 is switched to the supply of the drying gas G2.

[0113] In step S16, the control device 100 may cause the drive unit 49 to horizontally move the holding arm 44 so that the drying gas nozzle 45 moves from the center of the workpiece W to the periphery above the workpiece W. As a result, the processing liquid L2 present in approximately the center of the workpiece W is blown outward and evaporated, forming a dry region D in the center of the workpiece W, as shown in FIG. 15(b). Here, the dry region D refers to a region in which the surface Wa of the workpiece W is exposed due to the evaporation of the processing liquid L2. However, it also includes a case in which only a small number of droplets (e.g., micron-order droplets) adhere to the surface Wa. This dry region D spreads from the center of the workpiece W toward the periphery due to centrifugal force generated by the rotation of the workpiece W. After the dry region D is formed, the supply of the drying gas G2 from the drying gas nozzle 45 may be stopped.

[0114] In step S16, the control device 100 may control the exhaust unit V2 to supply the dry gas G2 to the surface Wa of the workpiece W while continuing to exhaust air from inside the cup body 71. The amount of air exhausted from inside the cup body 71 in step S16 may be set to be larger than the amount of air exhausted from inside the cup body 71 in step S14.

[0115] After the supply of the drying gas G2 from the drying gas nozzle 45 is stopped, the processing liquid L2 remaining on the surface Wa of the workpiece W spreads from the center of the workpiece W toward the periphery due to the centrifugal force generated by the rotation of the workpiece W. Thereafter, when the processing liquid L2 on the surface Wa of the workpiece W is shaken off from the periphery of the workpiece W, the drying of the workpiece W is completed. Thus, the liquid processing of the workpiece W is completed.

[0116] [Effects of the embodiment] In the nozzle unit 43 described above, the cooling gas G1 is radially discharged from the discharge ports 52 extending in the first direction (Y-axis direction) of the cooling gas nozzle 46. Therefore, the cooling gas G1 is supplied from the cooling gas nozzle 46 to a reach area AR on the surface Wa of the workpiece W that is longer than the width of the discharge ports 52 in the first direction. This allows the cooling gas G1 to be discharged with the reach area AR aligned with the center of the workpiece W. As a result, by supplying the cooling gas G1 during development processing, the center of the workpiece W, which is the area into which the cooling gas G1 is discharged, is cooled more than the peripheral edge. This makes it possible to improve the uniformity of the temperature distribution within the surface of the workpiece W.

[0117] During the development process, if cooling gas G1 is not used, specifically between the time when the developer is supplied to the surface Wa of the workpiece W and the time when the rinse liquid is supplied, heat dissipation from the periphery of the workpiece W is likely to be promoted due to the effects of exhaust gas from the housing. This can result in temperature differences within the surface of the workpiece W, resulting in different development rates within the surface and variations in the line width of the resist pattern within the surface of the workpiece W. In contrast, in the nozzle unit 43 according to the above embodiment, the atmosphere near the top surface of the developer where the cooling gas G1 is supplied is replaced, causing the developer to evaporate more rapidly in that area than in other areas, resulting in cooling due to the heat of vaporization. Furthermore, because the cooling gas G1 is supplied from the cooling gas nozzle 46 with a certain degree of pressure, it expands after being discharged from the cooling gas nozzle 46. As a result, the temperature of the cooling gas G1 itself drops (adiabatic expansion cooling), and the area of ​​the surface Wa of the workpiece W where the cooling gas G1 is discharged is thought to be cooled. In this way, by utilizing the fact that the surface Wa of the workpiece W can be locally cooled by supplying the cooling gas G1, it is possible to improve the uniformity of the temperature distribution within the surface of the workpiece W. As a result, it is possible to reduce the variation in the line width of the resist pattern within the surface of the workpiece W.

[0118] In one example of the above embodiment, the cooling gas nozzle 46 is configured so that both ends of the discharge port 52 in the first direction are visible when viewed from the first direction. In this case, the cooling gas G1 can be discharged over a wider area on the workpiece W while suppressing an increase in the length of the discharge port 52 in the first direction. Therefore, the nozzle unit 43 can be simplified.

[0119] In one example of the above embodiment, the central portion of the surface (opening surface) including the opening edge of the discharge port 52 in the first direction protrudes toward the surface Wa. In this case, the difference in the length of the gas flow path 51 to the opening surface between the vicinity of the center of the discharge port 52 (axis Ax) and both ends of the discharge port 52 in the Y-axis direction is small. This improves the uniformity of the flow velocity of the cooling gas G1 discharged within the opening surface, thereby achieving a uniform degree of cooling by the cooling gas G1 within the arrival area AR of the surface Wa of the cooling gas G1. This further improves the uniformity of the temperature distribution within the surface of the workpiece W. For example, in the example shown in FIG. 7, the flow path is longer at the corners when viewed from the front than in other parts, which may result in a weaker flow velocity at the corners. In the example shown in FIG. 8, the surface (opening surface) including the opening edge of the discharge port 52 is curved and does not have any corners when viewed from the front. This eliminates the risk of the flow velocity being weaker than in other parts, thereby further improving the uniformity of the flow velocity.

[0120] The nozzle unit 43 according to the above embodiment further includes a drying gas nozzle 45 having an outlet 45b that discharges the drying gas G2 toward the surface Wa, and a drive unit 49 that moves the cooling gas nozzle 46 and the drying gas nozzle 45 together along the surface Wa. In this case, the two nozzles can be moved by a single drive unit 49, and therefore the nozzle unit 43 including the drive unit 49 can be simplified compared to when these two nozzles are moved by separate drive units.

[0121] In the above embodiment, the flow velocity of the cooling gas G1 discharged from the outlet 52 of the cooling gas nozzle 46 is smaller than the flow velocity of the drying gas G2 discharged from the outlet 45b of the drying gas nozzle 45. In this case, the cooling gas nozzle 46 and the drying gas nozzle 45 can be used for processes that require a gas that is not strong enough to blow away the liquid on the surface Wa, and processes that require a gas that is strong enough to blow away the liquid on the surface Wa.

[0122] The nozzle unit 43 according to the above embodiment further includes a processing liquid nozzle 47 having an outlet 47b that discharges the processing liquid L2 toward the surface Wa. The drive unit 49 moves the cooling gas nozzle 46, the drying gas nozzle 45, and the processing liquid nozzle 47 together. In this case, the three nozzles can be moved by the single drive unit 49, and therefore the nozzle unit 43 can be simplified compared to a case in which the nozzle unit 43 includes drive units that move these three nozzles individually.

[0123] In the above embodiment, the cooling gas nozzle 46 and the processing liquid nozzle 47 are disposed at different positions in a second direction (X-axis direction) that is perpendicular to the first direction and extends along the surface Wa. The cooling gas nozzle 46 and the processing liquid nozzle 47 are configured so that the distance in the second direction between the arrival position (arrival area AR) on the surface Wa of the cooling gas G1 from the cooling gas nozzle 46 and the arrival position on the surface Wa of the processing liquid L2 from the processing liquid nozzle 47 is shorter than the distance in the second direction between the outlet 52 of the cooling gas nozzle 46 and the outlet 47b of the processing liquid nozzle 47. In this case, it is possible to shorten the time required for switching between the process using the cooling gas G1 from the cooling gas nozzle 46 (step S14) and the process using the processing liquid L2 from the processing liquid nozzle 47 (step S15).

[0124] In the above embodiment, the drying gas nozzle 45 and the processing liquid nozzle 47 are disposed at different positions in the second direction. The drying gas nozzle 45 and the processing liquid nozzle 47 may be configured so that, as viewed from the first direction, the inclination of the ejection direction of the processing liquid L2 from the processing liquid nozzle 47 with respect to the surface Wa is smaller than the inclination of the ejection direction of the drying gas G2 from the drying gas nozzle 45 with respect to the surface Wa. In this case, it is possible to suppress the influence of the processing liquid L2 ejected from the processing liquid nozzle 47 on the surface Wa, compared to when the processing liquid L2 is ejected from the processing liquid nozzle 47 approximately perpendicular to the surface Wa.

[0125] In the above embodiment, the cooling gas nozzle 46, the drying gas nozzle 45, and the processing liquid nozzle 47 are arranged in this order in the second direction. In this case, the nozzle unit 43 can be configured so that the gas supply paths to the drying gas nozzle 45 and the cooling gas nozzle 46 are short.

[0126] The coating and developing apparatus 2 according to the above embodiment includes a nozzle unit 43, a substrate holding unit 20 that holds and rotates a workpiece W with its front surface Wa facing upward, and a control device 100 that controls the nozzle unit 43 and the substrate holding unit 20. While the substrate holding unit 20 is rotating the workpiece W, the control device 100 causes the cooling gas nozzle 46 to discharge the cooling gas G1 so that the direction of the reach area AR of the cooling gas G1 on the front surface Wa intersects with the direction of rotation of the workpiece W (directions R1 and R2). This causes the cooling gas nozzle 46 to supply gas to a region of the front surface Wa that includes the central portion CR. In this case, the cooling gas G1 discharged from the cooling gas nozzle 46 can be diffused circumferentially in the central portion CR of the front surface Wa, reducing the temperature of the central portion CR compared to the peripheral portion of the workpiece W. This reduces the temperature difference between the central portion and the peripheral portion within the workpiece W.

[0127] In the liquid processing method according to the above embodiment, the workpiece W is cooled in the region where the gas is supplied by supplying a gas (cooling gas G1). Here, by supplying the gas so that it diffuses more in the radial direction than in the circumferential direction of the workpiece W, the central portion is cooled more than the peripheral portion. Therefore, it is possible to improve the uniformity of the temperature distribution within the surface of the workpiece W.

[0128] In the above embodiment, while the gas is being supplied toward the processing liquid L1 remaining on the workpiece W, the flow rate and flow speed of the gas may be adjusted so that the surface of the workpiece W is not exposed due to the movement of the processing liquid L1 caused by the supply of gas. In this case, it is possible to cool a portion of the workpiece W appropriately in accordance with the temperature sensitivity (cooling sensitivity) of the chemical liquid so that the impact of the gas does not have an adverse effect on the liquid processing, such as roughening or breaking down the film of the processing liquid L1.

[0129] The effects of this embodiment will be further explained using Figures 16 and 17. Figure 16(a) is a diagram showing the temperature distribution (in-plane temperature distribution) on the surface Wa of the workpiece W when no cooling gas is supplied, i.e., when the above-mentioned step S14 (see Figure 12) is omitted. The temperatures on the surface Wa shown in Figure 16(a) are the results of measurements taken after a predetermined time has elapsed since the supply of the developer in step S13 was completed and the development of the resist film R had progressed. On the other hand, Figure 16(b) is a diagram showing the in-plane temperature distribution on the surface Wa of the workpiece W when cooling gas is supplied in step S14. The temperatures of the workpiece W shown in Figure 16(b) are the results of measurements taken on the surface Wa while step S14 is being performed, after the same predetermined time has elapsed since step S13 was completed.

[0130] In Figures 16(a) and 16(b), the magnitude of the temperature is indicated by the intensity of the color, with darker areas indicating higher measured temperatures. The results shown in Figure 16(a) show that when no cooling gas was supplied, the temperature in the center of the workpiece W was higher than that in the peripheral area. On the other hand, the results shown in Figure 16(b) show that supplying cooling gas to the center of the workpiece W reduced the temperature in the center to the same level as that in the peripheral area, and the temperature difference between the center and peripheral area was smaller than the results shown in Figure 16(a).

[0131] Figure 17 shows the comparison results of the variation (standard deviation) of the in-plane linewidth distribution. In Figure 17, the comparison results are shown with the standard deviation when no cooling gas is supplied set to 100, and when cooling gas is supplied, the standard deviation is reduced to 71. In other words, it can be seen that supplying cooling gas improves the uniformity of the in-plane linewidth distribution by about 30%.

[0132] [Variations] The disclosure in this specification should be considered to be illustrative in all respects and not restrictive. Various omissions, substitutions, modifications, etc. may be made to the above examples without departing from the scope and spirit of the claims.

[0133] (Cooling gas supply method) In the above explanation of the series of steps, it has been explained that various methods can be used for supplying the cooling gas G1 from the cooling gas nozzle 46. However, by optimizing the timing and method of injecting the cooling gas G1 into the processing liquid L1, it is possible to improve the uniformity of the in-plane temperature distribution on the surface Wa of the workpiece W. As a result, for example, it is possible to improve the uniformity of the line width (CD) of the resist film R on the workpiece W after processing (after development). This point will be explained below.

[0134] First, the results of an investigation into the timing of supplying the cooling gas G1 will be described. As explained in Fig. 12, the supply of the cooling gas G1 is performed after the supply unit 30 supplies the processing liquid L1 (developer) to the surface Wa of the workpiece W (upper surface of the resist film R) (step S13). The supply of the cooling gas G1 is also performed before the processing liquid L2 (rinse liquid) is supplied from the processing liquid nozzle 47 to the upper surface of the surface Wa (processing liquid L1) of the workpiece W (step S15).

[0135] The control device 100 ensures that the processing liquid L1 remains on the surface Wa of the workpiece W for a period of time between the end of the supply of the processing liquid L1 to the surface Wa of the workpiece W (step S13) and the start of the supply of the processing liquid L2 (rinse liquid) (step S15). The period between the supply of the processing liquid L1 to the surface Wa of the workpiece W (step S13) and the supply of the processing liquid L2 (rinse liquid) (step S15) is a time period during which the processing liquid L1 remains on the surface Wa of the workpiece W, and this time period is referred to as the "maintenance period." The maintenance period includes the time required to supply the cooling gas G1 (step S14). The cooling gas G1 does not need to be supplied during the entire maintenance period between the supply of the processing liquid L1 to the surface Wa of the workpiece W (step S13) and the supply of the processing liquid L2 (rinse liquid) (step S15), but may be supplied only during part of the period.

[0136] As an example of supplying cooling gas G1 during a portion of the maintenance period, the supply of cooling gas G1 may be omitted during the first half of the maintenance period and may be omitted during the second half of the maintenance period. That is, the first half of the maintenance period may be a period during which the supply of cooling gas G1 is not performed (non-supply period). The non-supply period here refers to a period longer than the period during which the supply of cooling gas G1 may be stopped due to normal liquid processing operations, such as movement of various parts of liquid processing unit U1, including cooling gas nozzle 46, or opening and closing of valves provided in the gas or processing liquid flow paths.

[0137] By supplying the cooling gas G1 only in the latter half of the period, it is possible to reduce the temperature difference on the surface Wa of the workpiece W during the maintenance period, thereby improving the uniformity of the line width of the resist pattern within the surface of the workpiece W. This point will be explained with reference to FIGS.

[0138] Figures 18(a) and 18(b) show measurements of the temperature change on the surface Wa of the workpiece W when cooling gas G1 is supplied to the surface Wa of the workpiece W. Figure 18(a) shows the results when cooling gas G1 is supplied throughout the entire maintenance period T. Figure 18(b) shows the results when cooling gas G1 is not supplied during the first half of the maintenance period T1, but is supplied during the second half of the maintenance period T2. Figures 18(a) and 18(b) show the temperature change results at measurement points 0 mm, 9 mm, 37 mm, 74 mm, 110 mm, and 147 mm from the center of the workpiece W. The workpiece W used in this evaluation was a disk with a radius of 147 mm. Note that the arrangement of the cooling gas nozzle 46 supplying the cooling gas G1 was the same in Figures 18(a) and 18(b). Specifically, the cooling gas nozzle 46 is positioned so that the reach area AR of the cooling gas G1 from the cooling gas nozzle 46 is aligned in the radial direction of the workpiece W, and the longitudinal center of the reach area AR is located 50 mm outward from the center of the workpiece W. The longitudinal center of the reach area AR refers to the center in the direction in which the discharge port 52 extends.

[0139] As shown in FIG. 18(a), when cooling gas G1 is supplied for the entire maintenance period T, the temperature difference between the measurement points increases with the elapsed time from the supply of cooling gas G1 (time elapsed from the start of the maintenance period T). On the other hand, according to the results shown in FIG. 18(b), the temperature difference between the measurement points is smaller than that shown in FIG. 18(a) during both the first period T1 and the second period T2 of the maintenance period. The temperature difference at each point on the surface Wa of the workpiece W after supplying the processing liquid L1 may affect the progress of the processing with the processing liquid L1 (e.g., development with the processing liquid L1 if the processing liquid L1 is a developer). Therefore, the temperature difference between the measurement points at each time during the maintenance period T is considered to be related to the variability in the results of the processing with the processing liquid L1 on the surface Wa of the workpiece W. Therefore, as shown in FIG. 18(b), by configuring the supply of cooling gas G1 for part of the maintenance period, the variability in the progress of the processing on the surface Wa of the workpiece W can be suppressed. As a result, the variability in the processing results can also be suppressed.

[0140] FIG. 19 shows the results of a simulation of the temperature change on the surface Wa of the workpiece W when the cooling gas G1 is supplied during the first period T1 of the maintenance period and not during the second period T2 of the maintenance period. In other words, compared to the conditions shown in FIG. 18(b), the periods during which the cooling gas G1 is supplied and not supplied are reversed. FIG. 19 also shows the simulation results for the edge and center of the workpiece W. As shown in FIG. 19, when the cooling gas G1 is supplied during the first period T1 of the maintenance period, the temperature difference between the measurement points increases with time from the start of the cooling gas G1 supply until the end of the maintenance period (until the end of the second period T2). This trend is similar to the results shown in FIG. 18(a), where the temperature difference between the measurement points increases with time from the start of the maintenance period T. Although the temperature difference decreases during the second period T2, a certain degree of temperature difference is maintained until the end of the second period T2, as shown in FIG. 19. From this point of view, the conditions shown in FIG. 18(b) can suppress variations in the progress of the treatment on the surface Wa of the workpiece W. In other words, by supplying cooling gas G1 during the latter period T2 of the maintenance period and making the first period T1 a period in which cooling gas G1 is not supplied (non-supply period), it is believed that the effect of suppressing variation in the processing results on the surface Wa of the workpiece W due to the supply of cooling gas G1 can be enhanced.

[0141] Figure 20 shows the results of evaluating the relationship between the proportion of the period during which cooling gas G1 is supplied during the entire maintenance period and the line width variation of the resist pattern within the workpiece W, when the processing liquid L1 is used as the developer. In Figure 20, a proportion of 0% on the horizontal axis indicates the result of not supplying cooling gas G1, and a proportion of 100% indicates the result of supplying cooling gas G1 throughout the entire maintenance period. The numbers on the horizontal axis between 0% and 100% indicate the degree to which the latter period T2 during which cooling gas G1 is supplied is changed relative to the entire maintenance period, assuming that cooling gas G1 is supplied during the latter period T2, as in the results shown in Figure 18(b). For example, a proportion of 72% indicates that the supply time of cooling gas G1 was controlled so that the proportion of the first period T1 (non-supply period) of the entire maintenance period was 28%, and the proportion of the supply period of cooling gas G1 during the latter period T2 was 72%. The 3 sigma on the vertical axis indicates the 3 sigma associated with the variation in the line width measurement results of the resist pattern under each condition.

[0142] FIG. 21 is a diagram (contour diagram) showing the distribution of line width (CD) (in-plane line width (CD) distribution) on the surface Wa of the workpiece W under the conditions of 45%, 63%, and 81% ratios among the conditions shown in FIG. 20. FIG. 21(a) shows the results for a ratio of 45%, FIG. 21(b) shows the results for a ratio of 63%, and FIG. 21(c) shows the results for a ratio of 81%. All of these results were measured after the maintenance period related to the supply of cooling gas G1 had elapsed. As with FIG. 16, the size of the line width (CD) is indicated by the intensity of the color in FIG. 21, and the darker the color, the larger the measured line width (CD).

[0143] In the results shown in Figure 20, the results for the ratios of 36% to 81% all have similar 3sigma values, and it is estimated that the line width variations are similar. On the other hand, according to the results shown in Figure 21, even if the 3sigma values ​​are similar, the line widths at the center of the workpiece W are smaller (thinner) than at the periphery, as shown in Figure 21(a) (45%) and Figure 21(c) (81%). On the other hand, the results shown in Figure 21(b) (63%) confirm that the line width deviation is smaller between the center and periphery of the workpiece W. Thus, even when the 3sigma values ​​are similar, there are cases where in-plane line width deviation occurs and cases where it does not. The optimal time for supplying cooling gas G1 can be identified by combining the results of the 3sigma of the line width of the resist pattern shown in Figure 20 and the results shown in Figure 21, which show the in-plane line width (CD) deviation on the surface Wa of the workpiece W.

[0144] 20 and 21, for example, when the cooling gas G1 supply time in the latter period T2 of the maintenance period is set to 63%, the line width variation of the resist pattern can be reduced to a similar extent compared to when the supply time is set to 45% or 81% (FIG. 20). On the other hand, when the cooling gas G1 supply time in the latter period T2 is set to 63%, the in-plane line width deviation can be reduced compared to when the supply time is set to 45% or 81%. Note that these conditions may vary significantly depending on the type of resist solution and developer, the size of the resist pattern, the supply rate (speed) of the cooling gas G1, and other factors. Therefore, by adjusting the timing of the supply of the cooling gas G1 in response to changes in the manufacturing conditions, it is possible to identify the supply conditions of the cooling gas G1 that can further suppress the line width variation of the resist pattern according to the manufacturing conditions.

[0145] Figure 22 shows the results of an evaluation of the extent to which the line width variation of the resist pattern changes when the supply position of the cooling gas G1 is changed. Figures 22(a) and 22(b) show the results when processing was performed under the same conditions except for the cooling gas nozzle 46 on the surface Wa of the workpiece W. In both cases, the cooling gas nozzle 46 was positioned so that the reach area AR of the cooling gas G1 from the cooling gas nozzle 46 was aligned along the radial direction of the workpiece W. Furthermore, the cooling gas nozzle 46 was positioned so that the center of the reach area AR in the longitudinal direction (the direction in which the outlet 52 extends) was 30 mm, 50 mm, 70 mm, 90 mm, 100 mm, and 110 mm outward from the center of the workpiece W, respectively. Note that the longitudinal length of the reach area AR of the cooling gas nozzle 46 is approximately 80 mm, and the radius of the workpiece W is 147 mm. Therefore, when the distance from the center is "30 mm," the reach area AR overlaps the center of the workpiece W. The horizontal axis in Figure 22 represents the "distance from the center." The 3 sigma on the vertical axis indicates the 3 sigma related to the variation in the measurement results of the line width of the resist pattern under each condition. Note that Figures 22(a) and 22(b) show the results of evaluations performed at different times. Therefore, although both Figures 22(a) and 22(b) include the results for "90 mm," the 3 sigma results on the vertical axis vary.

[0146] According to the results shown in FIG. 22(a), 3sigma decreases as the distance from the center increases. Therefore, by moving the cooling gas nozzle 46 outward from the center, the line width variation of the resist pattern of the workpiece W is reduced. On the other hand, according to the results shown in FIG. 22(b), the line width variation of the resist pattern of the workpiece W is reduced when the distance from the center of the cooling gas nozzle 46 is 100 mm. Therefore, by positioning the cooling gas nozzle 46 so that the distance from the center of the cooling gas nozzle 46 is 100 mm, the line width variation of the resist pattern can be suppressed. Note that these conditions may also vary significantly depending on the type of resist solution and developer, the size of the resist pattern, the supply rate (speed) of the cooling gas G1, and other factors. Therefore, by adjusting the position of the cooling gas nozzle 46 that supplies the cooling gas G1 in response to changes in the manufacturing conditions, the supply conditions of the cooling gas G1 that can suppress the line width variation of the resist pattern according to the manufacturing conditions can be identified.

[0147] As in the above-described modified example, the maintenance period T from when the state in which the processing liquid L1 is retained on the workpiece W is formed over the entire surface (almost the entire surface) of the workpiece W until the removal of the processing liquid from the substrate is started may include a non-supply period in which gas is not supplied. In this case, by providing a non-supply period in which gas is not supplied within the maintenance period T, it is possible to adjust the cooling state of the workpiece W by the gas. Therefore, it is possible to improve the uniformity of the temperature distribution within the surface.

[0148] Furthermore, the non-supply period may be set in the first half of the maintenance period. By setting the non-supply period in the first half of the maintenance period T, it is possible to improve the uniformity of the temperature distribution within the surface of the workpiece W throughout the entire maintenance period. Note that a period in which gas is supplied may also be set before the non-supply period. In this way, there are no particular limitations on which period of the maintenance period is set as the non-supply period, and it can be changed as appropriate.

[0149] Alternatively, gas may be supplied while rotating the workpiece W, so that the gas reaches an area on the workpiece W that does not include the center of the substrate. As explained above, when gas is supplied while rotating the workpiece W, if the cooling gas nozzle 46 is positioned so that the gas reaches the center of the workpiece W, a difference in the amount of gas supplied may occur between the center and the peripheral edge of the workpiece W. For this reason, by adjusting the supply position so that the gas does not reach the center, more uniform cooling by gas can be achieved.

[0150] (Other variations) Next, modifications other than the supply conditions of the cooling gas G1 will be described. In the nozzle unit 43 of the above example, the drying gas nozzle 45, the cooling gas nozzle 46, and the processing liquid nozzle 47 are connected to each other and moved together by a single drive unit 49. However, the nozzle unit 43 may have a drive unit for moving any two of the nozzles and a drive unit for moving the remaining nozzle. In this case, the two nozzles moved by one drive unit may be connected to each other, and the other nozzle moved by another drive unit may not be connected to the two nozzles. Alternatively, the nozzle unit 43 may have three drive units for moving these three nozzles individually, or these three nozzles may not be connected to each other. Note that the nozzle unit 43 does not necessarily have to have at least one of the drying gas nozzle 45 and the processing liquid nozzle 47.

[0151] In the nozzle unit 43 of the above example, when viewed from the Y-axis direction (the direction in which the outlets 52 extend), the arrival positions on the surface Wa of the gas or processing liquid from the drying gas nozzle 45, the cooling gas nozzle 46, and the processing liquid nozzle 47 generally coincide with each other, but the relationship between the arrival positions is not limited to this. The arrival positions of the gas or the like from any two of these three nozzles may generally coincide with each other, and the arrival position of the gas or the like from the remaining nozzle may be different from the arrival positions of the above two nozzles. The arrival positions of the gas or the like from the three nozzles may also be different from each other. Depending on these arrival positions, the ejection direction of the gas or the like from the outlets of the three nozzles may be different from that of the above example.

[0152] The arrangement (order) of the drying gas nozzle 45, the cooling gas nozzle 46, and the processing liquid nozzle 47 in the X-axis direction is not limited to the example described above, and these three nozzles may be arranged in any order. The height relationship of the outlets of these three nozzles is not limited to the example described above, and the outlet of any nozzle may be higher than the outlets of the other two nozzles, the height positions of any two nozzles may be approximately the same, or the height positions of the outlets of the three nozzles may be approximately the same.

[0153] The liquid processing unit U1 that performs liquid processing other than the development process may have the same nozzle unit 43 as described above. The coating and developing apparatus 2 (substrate processing system 1) is not limited to the above example, and may have any configuration as long as it includes at least a nozzle unit that includes a discharge port extending in one direction and a gas nozzle that discharges gas radially. [Explanation of symbols]

[0154] 2...coating and developing apparatus, U1...liquid processing unit, 20...substrate holder, 43...nozzle unit, 45...drying gas nozzle, 45b...discharge outlet, 46...cooling gas nozzle, 47...processing liquid nozzle, 47b...discharge outlet, 49...drive unit, 52...discharge outlet, 56...discharge flow path, 100...control device, W...workpiece, Wa...surface.

Claims

1. A nozzle unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate, a gas nozzle having a discharge flow path through which a cooling gas flows and a discharge port through which the cooling gas flowing through the discharge flow path is discharged toward the surface of the substrate; a second gas nozzle having a second outlet that discharges a second gas different from the cooling gas toward the surface; a drive unit that moves both the gas nozzle and the second gas nozzle along the surface, The gas nozzle is a nozzle unit that supplies the cooling gas to the surface so that when the cooling gas is discharged from the discharge port and reaches the surface, the area where the cooling gas reaches is diffused in the radial direction compared to the circumferential direction of the substrate when the gas nozzle is positioned at a predetermined discharge position.

2. 2. The nozzle unit according to claim 1, wherein, when viewed from the radial direction in which the reach area spreads, a distance from the gas nozzle to the surface along the discharge direction of the cooling gas is greater than a distance from the second gas nozzle to the surface along the discharge direction of the second gas.

3. a processing liquid nozzle having a third outlet that discharges the processing liquid toward the surface; The nozzle unit according to claim 1 , wherein the driving unit moves the gas nozzle, the second gas nozzle, and the processing liquid nozzle together.

4. the gas nozzle and the processing liquid nozzle are disposed at different positions in a second direction perpendicular to the radial direction in which the reaching area spreads and along the surface, and 4. The nozzle unit according to claim 3, wherein the gas nozzle and the processing liquid nozzle are configured such that a distance in the second direction between a position on the surface where the cooling gas from the gas nozzle reaches and a position on the surface where the processing liquid from the processing liquid nozzle reaches is smaller than a distance in the second direction between the outlet and the third outlet.

5. the second gas nozzle and the processing liquid nozzle are disposed at different positions in the second direction, 5. The nozzle unit according to claim 4, wherein the second gas nozzle and the processing liquid nozzle are configured such that, when viewed from the radial direction in which the reach area spreads, an inclination of a direction in which the processing liquid is ejected from the processing liquid nozzle relative to the surface is smaller than an inclination of a direction in which the second gas is ejected from the second gas nozzle relative to the surface.

6. The nozzle unit according to claim 4 , wherein the gas nozzle, the second gas nozzle, and the processing liquid nozzle are arranged in this order in the second direction.

7. A nozzle unit according to any one of claims 1 to 6; a substrate holding unit that holds and rotates the substrate with the surface facing upward; a control unit that controls the nozzle unit and the substrate holding unit; The control unit causes the gas nozzle to eject the cooling gas while the substrate is rotated by the substrate holding unit, thereby causing the gas nozzle to supply the cooling gas to an area of ​​the surface that is inside the peripheral portion.

8. applying a processing liquid to a surface of the substrate; supplying a cooling gas from a gas nozzle to a region of the surface that is inside the peripheral edge portion while the substrate is being rotated; Discharging a second gas different from the cooling gas from a second gas nozzle toward the surface; moving the gas nozzle and the second gas nozzle together along the surface with a drive; Including, A liquid processing method in which, when the cooling gas is supplied, the cooling gas is discharged so that, when the gas nozzle is positioned at a predetermined discharge position and the cooling gas discharged from the discharge outlet of the gas nozzle reaches the surface, the area reached by the cooling gas is spread radially compared to the circumferential direction of the substrate.

9. the cooling gas is supplied while the processing liquid is maintained in a stagnant state on the substrate; 9. The liquid processing method according to claim 8, wherein, while the cooling gas is supplied toward the processing liquid stagnating on the substrate, a flow rate of the cooling gas is adjusted so that the surface of the substrate is not exposed due to movement of the processing liquid caused by the supply of the cooling gas.

10. A method for manufacturing a substrate, comprising: applying a processing liquid to a surface of the substrate; supplying a cooling gas from a gas nozzle to a region of the surface that is inside the peripheral edge portion while the substrate is being rotated; In supplying the cooling gas, the cooling gas is discharged such that, when the gas nozzle is disposed at a predetermined discharge position and the cooling gas is discharged from a discharge port of the gas nozzle and reaches the surface, the reach area of ​​the cooling gas is spread in a radial direction compared to a circumferential direction of the substrate, the cooling gas is supplied while the processing liquid is maintained in a stagnant state on the substrate; a flow rate of the cooling gas is adjusted while the cooling gas is being supplied toward the processing liquid remaining on the substrate so that the surface of the substrate is not exposed due to movement of the processing liquid caused by the supply of the cooling gas; A liquid processing method, wherein a non-supply period in which the cooling gas is not supplied is included in a maintenance period from when a state in which the processing liquid is stagnant on the substrate is formed over the entire surface of the substrate until when removal of the processing liquid from the substrate is started.

11. The liquid processing method according to claim 10 , wherein the non-supply period is provided in a first half of the maintenance period.

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