Encapsulating resin composition, method for producing encapsulating resin composition, and method for producing semiconductor device

Abstract

To provide a sealing resin composition difficult to generate sowing unevenness and dust, a manufacturing method of the sealing resin composition, and a manufacturing method of a semiconductor device manufactured from the sealing resin composition.SOLUTION: A sealing resin composition comprising a plurality of particles. In accordance with the dry sieving test of JIS Z8815-1994, by using a 1 mm sieve, a 0.85 mm sieve, a 0.5 mm sieve, and a 0.3 mm sieve in the order described, when a sieving test for sieving the sealing resin composition is performed, 80 mass% or more of the plurality of particles stay on a sieve of any one of a sieve with an opening of 0.85 mm, a sieve with an opening of 0.5 mm, and a sieve with an opening of 0.3 mm.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure generally relates to an encapsulating resin composition, a method for producing an encapsulating resin composition, and a method for producing a semiconductor device, and more particularly to an encapsulating resin composition that can be used to encapsulate a semiconductor element, a method for producing the encapsulating resin composition, and a method for producing a semiconductor device made from the encapsulating resin composition. [Background technology]

[0002] One example of a method for encapsulation using a resin composition is compression molding using a particulate resin composition. For example, Patent Document 1 describes a method for encapsulating a semiconductor element by spreading a granular epoxy resin composition in a mold, heating the mold, and curing the molten epoxy resin composition so that the molten epoxy resin composition surrounds the semiconductor element. The epoxy resin composition is in the form of granules with a specific particle size distribution produced by centrifugal milling, pulverization and sieving, hot cutting, or the like, and therefore discloses that uneven spreading can be suppressed. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5343830 Summary of the Invention [Problem to be solved by the invention]

[0004] According to the inventor's research, the epoxy resin composition described in Patent Document 1 is made of particles with small particle diameters produced by pulverization, so uneven spreading is unlikely to occur. However, there is a problem in that powder tends to fall off from the surface of the particles of the epoxy resin composition.

[0005] An object of the present disclosure is to provide an encapsulating resin composition that is less likely to cause uneven sprinkling and powdering, a method for producing this encapsulating resin composition, and a method for producing a semiconductor device made from this encapsulating resin composition. [Means for solving the problem]

[0006] An encapsulating resin composition according to one embodiment of the present disclosure is an encapsulating resin composition comprising a plurality of particles, and when a sieving test is performed in accordance with the dry sieving test of JIS Z8815-1994, in which the encapsulating resin composition is sieved using a sieve with a mesh size of 1 mm, a sieve with a mesh size of 0.85 mm, a sieve with a mesh size of 0.5 mm, and a sieve with a mesh size of 0.3 mm in the listed order, 80 mass % or more of the plurality of particles are retained on any one of the sieves with a mesh size of 0.85 mm, the sieve with a mesh size of 0.5 mm, and the sieve with a mesh size of 0.3 mm.

[0007] A method for producing an encapsulating resin composition according to one embodiment of the present disclosure includes a droplet-forming step of depositing droplets of a mixture containing raw materials of the encapsulating resin composition and a solvent on a flat surface, and a drying step of drying the droplets.

[0008] A method for manufacturing a semiconductor device according to one embodiment of the present disclosure is a method for manufacturing a semiconductor device including a semiconductor element and an encapsulant that encapsulates the semiconductor element, and includes an arrangement step of arranging the encapsulating resin composition in a mold, and a compression molding step of molding the encapsulating resin composition by a compression molding method to produce the encapsulant. [Effects of the Invention]

[0009] According to one aspect of the present disclosure, it is possible to provide an encapsulating resin composition that is less likely to cause uneven sprinkling and powdering, a method for manufacturing the encapsulating resin composition, and a method for manufacturing a semiconductor device made from the encapsulating resin composition. [Brief explanation of the drawings]

[0010] [Figure 1]FIG. 1A is a perspective view of a particle according to one embodiment of the present disclosure, FIG. 1B is a perspective view of a particle according to another embodiment of the present disclosure, and FIG. 1C is a perspective view of a particle according to another embodiment of the present disclosure. [Figure 2] FIG. 2A is a side view of a particle according to one embodiment of the present disclosure, FIG. 2B is a plan view of a particle according to one embodiment of the present disclosure, and FIG. 2C is a cross-sectional view taken along line II in FIG. 2B. [Figure 3] 3A is a side view of a particle according to another embodiment of the present disclosure, FIG. 3B is a plan view of a particle according to another embodiment of the present disclosure, and FIG. 3C is a cross-sectional view taken along line II in FIG. 3B. [Figure 4] 4A is a side view of a particle according to another embodiment of the present disclosure, FIG. 4B is a plan view of a particle according to another embodiment of the present disclosure, and FIG. 4C is a cross-sectional view taken along line II in FIG. 4B. [Figure 5] FIG. 5A is a plan view of a dispenser device used when preparing an encapsulating resin composition according to this embodiment, FIG. 5B is a front view of the dispenser device, and FIG. 5C is a side view of the dispenser device. [Figure 6] 6A to 6E are schematic cross-sectional views showing the steps of the method for manufacturing a semiconductor device according to this embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view showing a semiconductor device manufactured by the semiconductor device manufacturing method according to this embodiment. [Figure 8] FIG. 8 is a photograph of the encapsulating resin composition of Example 1 of the present disclosure. [Figure 9] 9A and 9B are photographs of the encapsulating resin composition of Comparative Example 1. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments of the present disclosure will be described. Note that the present disclosure is not limited to the following embodiments. The following embodiments are merely examples of various embodiments of the present disclosure, and various modifications are possible depending on the design as long as the object of the present disclosure is achieved.

[0012] <Sealing resin composition> An encapsulating resin composition according to an embodiment of the present disclosure will be described.

[0013] An encapsulating resin composition according to an embodiment of the present disclosure comprises a plurality of particles. When a sieving test is performed in accordance with the dry sieving test of JIS Z8815-1994, in which the encapsulating resin composition is sieved using a 1 mm sieve, a 0.85 mm sieve, a 0.5 mm sieve, and a 0.3 mm sieve in the listed order, 80 mass% or more of the particles are retained on any one of the 0.85 mm sieve, the 0.5 mm sieve, and the 0.3 mm sieve.

[0014] According to this embodiment, since the encapsulating resin composition is made of the above-described particles, uneven spreading is unlikely to occur when the encapsulating resin composition is placed in a mold, and powdering from the encapsulating resin composition is unlikely to occur.

[0015] A more specific configuration of the encapsulating resin composition according to this embodiment will be described.

[0016] <Particles of encapsulating resin composition> (particle size) The particle diameter of the particles according to this embodiment will be described in detail.

[0017] As described above, when a sieving test is performed in accordance with the dry sieving test of JIS Z8815-1994, in which an encapsulating resin composition is sieved using a 1 mm sieve, a 0.85 mm sieve, a 0.5 mm sieve, and a 0.3 mm sieve in the listed order, 80 mass% or more of the particles are retained on any one of the 0.85 mm sieve, the 0.5 mm sieve, and the 0.3 mm sieve. In this case, the encapsulating resin composition according to this embodiment has high particle uniformity, so that when the encapsulating resin composition is filled into a mold, particles with relatively large particle sizes are less likely to rise to the surface. Therefore, uneven distribution of the encapsulating resin composition when placed in the mold is less likely to occur. Furthermore, because the proportion of particles with small particle sizes is low, the encapsulating resin composition is less likely to powder.

[0018] Furthermore, when the above-mentioned sieving test is carried out, it is preferable that 90% by mass or more of the plurality of particles are retained on one of a sieve with a mesh size of 0.85 mm, a sieve with a mesh size of 0.5 mm, and a sieve with a mesh size of 0.3 mm, and it is more preferable that 3.0% by mass or more of the plurality of particles are retained on one of a sieve with a mesh size of 0.85 mm, a sieve with a mesh size of 0.5 mm, and a sieve with a mesh size of 0.3 mm.

[0019] When the above-mentioned sieving test is performed, the sum of the particles retained on the 0.85 mm sieve, the particles retained on the 0.5 mm sieve, and the particles retained on the 0.3 mm sieve is preferably 95 mass% or more of the entire plurality of particles. In this case, uneven spreading is further unlikely to occur when the encapsulating resin composition is placed in a mold, and powdering from the encapsulating resin composition is further unlikely to occur. In addition, this is preferable from the viewpoint of productivity when the encapsulating resin composition is produced. Furthermore, when the above-mentioned sieving test is performed, the sum of the particles retained on the 0.85 mm sieve, the particles retained on the 0.5 mm sieve, and the particles retained on the 0.3 mm sieve is more preferably 1.0 mass% or more of the entire plurality of particles, and even more preferably 0.5 mass% or more.

[0020] (shape) The shape of the particles according to this embodiment will be described in detail with reference to FIGS.

[0021] As described above, the encapsulating resin composition according to this embodiment is an encapsulating resin composition made of a plurality of particles.

[0022] Preferably, the particle 4 according to this embodiment has, for example, a flat surface 5 and a curved surface 6, and at least one cross section perpendicular to the flat surface 5 has a shape represented by a line segment 51 originating from the flat surface 5 and a convex curve originating from the curved surface 6 and connecting two ends of the line segment 51. In this case, the encapsulating resin composition is less likely to roll after being applied to the mold, and as a result, uneven application of the encapsulating resin composition when placed in the mold is less likely to occur. This is presumably because the particle 4 is more likely to be stable with the flat surface 5 facing downward. Furthermore, in this case, the particle 4 is less likely to be crushed, further reducing the likelihood of powdering from the encapsulating resin composition.

[0023] The shape of the flat surface 5 of the particle 4 according to this embodiment may be, for example, a circle, an ellipse, a sector, a shape elongated in one direction, or a shape in which a plurality of circles are arranged linearly with some overlapping, etc. Among these, the shape of the flat surface 5 is preferably a circle.

[0024] The curved surface 6 in the particle 4 according to this embodiment is preferably a convex curved surface that contacts the outer periphery of the flat surface 5. In this case, the flat surface 5 of the particle 4 faces downward, which increases the stability of the particle 4 and makes it difficult for the encapsulating resin composition to roll after being spread on a mold. As a result, uneven spreading of the encapsulating resin composition when placed on a mold is unlikely to occur. Furthermore, this convex curved surface may be slightly distorted or may have a slight depression. In other words, it is sufficient that the convex curved surface be recognizable as a convex curved surface by appearance.

[0025] At least one cross section perpendicular to the flat surface 5 in the particle 4 according to this embodiment preferably originates from the curved surface 6 and has a curve 61 connecting two ends of the line segment 51. The shape of the curve 61 may be, for example, convex, concave, or wavy. Of these, the shape of the curve 61 is preferably convex. That is, the curve 61 is preferably a convex curve. Furthermore, the shape of the convex curve may be, for example, an arc or a bow. Of these, the shape of the convex curve is preferably an arc. Furthermore, this convex curve may be slightly distorted or may have a slight depression. That is, it is sufficient that the convex curve be visually recognizable as a convex curve.

[0026] In this embodiment, it is preferable that the length L1 of the line segment 51 originating from the flat surface 5 and the length L2 of the curve 61 connecting the two ends of the line segment 51 have the relationship shown in the following formula (1). 1.1×L1 <L2<2×L1···(1)

[0027] When L2 is greater than 1.1 × L1, the particles 4 are less likely to be crushed by impacts during transport, and as a result, powdering from the encapsulating resin composition is even less likely to occur. When L2 is smaller than 2 × L1, the encapsulating resin composition is less likely to roll after being spread on a mold, and as a result, uneven spreading of the encapsulating resin composition when placed on a mold is even less likely to occur. Additionally, L2 is preferably at least 1.3 times L1, and even more preferably at least 1.5 times L1. Furthermore, L2 is preferably no greater than 2.0 times L1, and even more preferably no greater than 1.8 times L1.

[0028] L1 is preferably 0.3 mm or more, and more preferably 0.5 mm or more. L1 is preferably 1.7 mm or less, and more preferably 1.0 mm or less. L2 is preferably 0.65 mm or more, and more preferably 0.85 mm or more. L2 is preferably 1.8 mm or less, and more preferably 1.5 mm or less.

[0029] The aspect ratio of the particles 4 according to this embodiment is preferably 3 or less. In this case, the particles 4 are less likely to be crushed due to impacts during transport, etc. If the particles 4 are crushed, fine powder of the encapsulating resin composition is generated, which makes the encapsulating resin composition more likely to powder. The aspect ratio here is defined as follows: First, the maximum major axis and the width dimension perpendicular to the maximum major axis are measured for 100 particles from a microscopic image of the particles. Next, based on the results, the value of (maximum major axis) / (width dimension) is calculated. The average value of the values ​​of (maximum major axis) / (width dimension) for the 100 particles is then defined as the aspect ratio. The upper limit of the aspect ratio is 5.

[0030] The surfaces of the particles 4 are preferably smooth. In this case, fine powder is less likely to be generated from the surfaces of the particles 4, and therefore dusting is even less likely to occur.

[0031] Next, the specific shape of the particle 4 according to this embodiment will be described.

[0032] (first shape) Particle 4 according to this embodiment preferably includes a particle having a first shape (hereinafter referred to as particle 40). The shape of particle 40 is shown in FIG. 1A and FIGS. 2A to 2C. As shown in FIGS. 1A and 2A, particle 40 has a circular flat surface 5 and a curved surface 6, which is a dome-shaped convex curved surface tangent to the outer periphery of flat surface 5. As shown in FIG. 2B, particle 40 has a circular shape when viewed from the side opposite flat surface 5. As shown in FIG. 2C, the cross-sectional shape of particle 40 has a line segment 51 originating from flat surface 5 and a circular convex curve originating from curved surface 6 and connecting two ends of line segment 51. FIG. 2C shows a cross-section of particle 40 taken along line II shown in FIG. 2B, i.e., a plane passing through the center of flat surface 5 and perpendicular to flat surface 5. In any cross-sectional view of particle 40 passing through the center of flat surface 5 and perpendicular to flat surface 5, the cross-sectional shape of particle 40 has a line segment 51 originating from flat surface 5 and a convex arc-shaped curve originating from curved surface 6 and connecting the two ends of line segment 51. Furthermore, in any cross-sectional view, the length L1 of line segment 51 and the length L2 of curve 61 satisfy the relationship shown in formula (1) above. In addition, particle 40 satisfies the aspect ratio condition described above. These factors make particle 40 less likely to roll after being placed in a mold. Furthermore, particle 40 is less likely to be crushed by impacts, etc., that occur during transportation.

[0033] (Second shape) Particle 4 according to this embodiment preferably includes a particle having a second shape (hereinafter referred to as particle 41). The shape of particle 41 is shown in FIG. 1B and FIGS. 3A to 3C. As shown in FIG. 1B, particle 41 has a flat surface 5 that is elongated in one direction and has arc-shaped ends, and a curved surface 6 that is a convex curve that contacts the outer periphery of flat surface 5. The convex curved surface has a shape in which portions of a sphere are connected to both ends of a semicylinder having an axis along the longitudinal direction of flat surface 5. As shown in FIG. 3B, particle 41 has a shape that is elongated in one direction when viewed from the side opposite flat surface 5. As shown in FIG. 3C, the cross-sectional shape of particle 41 has a line segment 51 originating from flat surface 5 and a convex arc-shaped curve originating from curved surface 6 that connects the two ends of line segment 51. 3C shows a cross section taken along line II in FIG. 3B, i.e., a cross section of particle 41 taken along a plane perpendicular to flat surface 5 and perpendicular to the longitudinal direction of flat surface 5. In the cross section shown in FIG. 3C, the length L1 of line segment 51 and the length L2 of curve 61 satisfy the relationship shown in formula (1) above. However, particle 41 does not satisfy the aspect ratio condition described above. Therefore, particle 40 having the first shape described above is less likely to be crushed, and as a result, fine powder is less likely to be generated.

[0034] (Third shape) Particle 4 according to this embodiment preferably includes a particle having a third shape (hereinafter referred to as particle 42). The shape of particle 42 is shown in FIG. 1C and FIGS. 4A to 4C. As shown in FIG. 1C, particle 42 has a flat surface 5 consisting of a plurality of overlapping circles arranged in a straight line, and a curved surface 6 (see FIG. 4A) that is not a convex curved surface but has an uneven, wavy cross-sectional profile parallel to the longitudinal direction. As shown in FIG. 4B, when viewed from the side opposite flat surface 5, particle 42 has a shape consisting of a plurality of overlapping circles arranged in a straight line. As shown in FIG. 4C, the cross-sectional shape of particle 42 is represented by a line segment 51 originating from flat surface 5 and a convex arc-shaped curve originating from curved surface 6, connecting two ends of line segment 51. FIG. 4C shows a cross section taken along line II in FIG. 4B, i.e., a cross section of particle 41 taken along a plane perpendicular to flat surface 5, perpendicular to the longitudinal direction of flat surface 5, and passing through the apex of the convex portion of curved surface 6. In the cross section shown in FIG. 4C, the length L1 of line segment 51 and the length L2 of curved line 61 satisfy the relationship shown in formula (1) above. However, particle 42 does not satisfy the aspect ratio requirement described above. Because particle 42 does not have a convex curved surface and does not satisfy the preferred aspect ratio requirement, the first-shape particles 40 and the second-shape particles 41 described above are less likely to be crushed and produce fine powder.

[0035] The shape of each of particles 40, 41, and 42 may be slightly distorted from the shape described above, and may have a slight depression. That is, each of particles 40, 41, and 42 may have a shape that can be considered the same as the shape described above. Furthermore, the shape of particle 4 is not limited to the above, and particle 4 may include particles having various shapes other than the above-described particles 40, 41, and 42.

[0036] <Composition of the encapsulating resin composition> The composition of the encapsulating resin composition according to this embodiment will be described in detail.

[0037] The encapsulating resin composition according to this embodiment may have, for example, an appropriate composition for use as an encapsulant.

[0038] The encapsulating resin composition can contain, for example, a reactive resin (A), a curing agent (B), a curing accelerator (C), and an inorganic filler (D). That is, the raw materials of the encapsulating resin composition are, for example, the reactive resin (A), the curing agent (B), the curing accelerator (C), and the inorganic filler (D).

[0039] The reactive resin (A) may include any suitable reactive resin used in the production of an encapsulant, and may include, for example, at least one selected from the group consisting of a thermosetting resin, an ultraviolet-curable resin, and the like.

[0040] The thermosetting resin may include, for example, at least one selected from the group consisting of epoxy resin, imide resin, phenol resin, cyanate resin, melamine resin, and acrylic resin.

[0041] The epoxy resin may include at least one selected from the group consisting of alkylphenol novolac type epoxy resins, naphthol novolac type epoxy resins, phenol aralkyl type epoxy resins having a skeleton, biphenyl aralkyl type epoxy resins, naphthol aralkyl type epoxy resins having a skeleton, polyfunctional type epoxy resins, triphenylmethane type epoxy resins, tetrakisphenolethane type epoxy resins, dicyclopentadiene type epoxy resins, stilbene type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, biphenyl type epoxy resins, naphthalene type epoxy resins, alicyclic epoxy resins, bromine-containing epoxy resins, glycidylamine type epoxy resins obtained by reacting polyamines with epichlorohydrin, and glycidyl ester type epoxy resins obtained by reacting polybasic acids with epichlorohydrin.

[0042] The curing agent (B) may contain an appropriate curing agent used in the production of an encapsulant. The curing agent (B) may contain, for example, at least one selected from the group consisting of dicyandiamide, phenolic curing agents, cyclopentadiene, amine curing agents, aralkyl resins having a phenylene or biphenylene skeleton, and acid anhydrides. The phenolic curing agent may contain two or more phenolic hydroxyl groups per molecule. The phenolic curing agent may contain, for example, at least one selected from the group consisting of phenol novolac resins, phenol aralkyl resins, multifunctional phenolic resins, dicyclopentadiene phenolic resins, terpene phenolic resins, naphthalene phenolic resins, triazine-modified novolac resins, and bisphenol resins. The bisphenol resin may contain, for example, at least one selected from the group consisting of bisphenol A resins, bisphenol F resins, and bisphenol S resins.

[0043] The curing accelerator (C) may include any curing accelerator used in the encapsulant, such as at least one selected from the group consisting of tertiary amines, tertiary amine salts, phosphines, phosphonium salts, triarylphosphines, tetraphenylphosphonium tetraphenylborate, imidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, and 1,8-diazabicyclo(5,4,0)undecene-7.

[0044] The inorganic filler (D) may contain an appropriate inorganic filler to be blended in the sealing material. The inorganic filler (D) preferably has electrical insulation. Here, the term "electrical insulation" means that the volume resistivity of the inorganic filler (D) is 1×10 9This means that the resistance is Ω / cm or more. The inorganic filler (D) can contain at least one selected from the group consisting of metal oxides, metal nitrides, metal carbonates, and metal hydroxides. The metal oxide can contain at least one selected from the group consisting of alumina, fused silica, spherical silica, spherical fused silica, crystalline silica, magnesium oxide, calcium oxide, titanium oxide, beryllium oxide, copper oxide, cuprous oxide, and zinc oxide. The metal nitride can contain at least one selected from the group consisting of boron nitride, aluminum nitride, and silicon nitride. The metal carbonate can contain at least one selected from the group consisting of magnesium carbonate, calcium carbonate, and barium carbonate. The metal hydroxide can contain at least one selected from the group consisting of aluminum hydroxide, calcium hydroxide, and magnesium hydroxide. The shape of the inorganic filler (D) can be, for example, spherical, flat, elliptical, tubular, wire-like, needle-like, plate-like, peanut-like, or irregular. Among these, the inorganic filler (D) is preferably spherical in shape, since in this case the mixture (c) containing the inorganic filler (D) can be easily discharged from a dispenser in the droplet production step described below.

[0045] The encapsulating resin composition may contain additives other than the above-mentioned raw materials, such as at least one selected from the group consisting of a coupling agent, a dispersant, a flame retardant, a flame retardant assistant, a mold release agent, an ion trapping agent, a thixotropic agent, a surfactant, an antifoaming agent, a leveling agent, a pigment, a colorant, a stress reducing agent, a tackifier, and a silicone flexibilizer.

[0046] The encapsulating resin composition can have an appropriate composition depending on the required performance of the semiconductor. That is, the encapsulating resin composition can contain components other than the above-mentioned raw materials and additives depending on the required performance of the semiconductor.

[0047] <Method of manufacturing encapsulating resin composition> The method for producing the encapsulating resin composition according to this embodiment will be described in detail.

[0048] The method for producing an encapsulating resin composition according to this embodiment includes a droplet-forming step of depositing droplets of a mixture containing the raw materials for the encapsulating resin composition and a solvent on a flat surface, and a drying step of drying the droplets. In this case, particles having both flat and curved surfaces, such as the particles having the first shape, the second shape, and the third shape described above, are easily produced. Furthermore, particles with high particle size uniformity and smooth surfaces are easily produced. These features reduce the occurrence of uneven sprinkling when the encapsulating resin composition is placed in a mold, and also reduce the occurrence of powdering from the encapsulating resin composition. Furthermore, the drying step includes a first heating step of heating the droplets and a second heating step, which follows the first heating step. The heating temperature in the second heating step is preferably higher than the heating temperature in the first heating step. Furthermore, a mixture-forming step of mixing the raw materials for the encapsulating resin composition and a solvent to form a mixture may be included before the droplet-forming step.

[0049] (Mixture preparation process) First, to produce an encapsulating resin composition, for example, raw materials for the encapsulating resin composition and a solvent are prepared. The raw materials for the encapsulating resin composition may be, as described above, the reactive resin (A), the curing agent (B), the curing accelerator (C), the inorganic filler (D), and the like.

[0050] Next, the above-mentioned raw materials are weighed and blended, and then kneaded uniformly to obtain a kneaded product (a). A commercially available composition containing the above-mentioned raw materials may be used as the kneaded product (a). Next, the kneaded product (a) is spread on a cooling conveyor to form a plate, and then pulverized to obtain a pulverized product (b). The pulverized product (b) is then mixed with a solvent to produce a mixture (c).

[0051] The solvent used in preparing the mixture (c) may contain at least one selected from the group consisting of, for example, methyl ethyl ketone (MEK), N,N-dimethylformamide (DMF), acetone, and methyl isobutyl ketone (MIBK). The percentage of the solvent relative to the mixture (c) is preferably 5% by mass or more, more preferably 10% by mass or more. The percentage of the solvent relative to the mixture (c) is preferably 30% by mass or less, more preferably 20% by mass or less. It is preferable to select an appropriate solvent according to the composition of the kneaded material (a) used or the drying conditions of the drying step described below. Furthermore, a commercially available composition in which the above-mentioned raw materials and the solvent are mixed may be used as the mixture (c).

[0052] (Droplet production process) Next, droplets are formed by depositing mixture (c) on a flat surface. The viscosity of mixture (c) when ejected is preferably adjusted to 0.5 Pa·s or more and 60.0 Pa·s or less, and more preferably 1.0 Pa·s or more and 20.0 Pa·s or less. This is presumably because adjusting the viscosity of mixture (c) makes it easier to form droplets of uniform size and shape, thereby making it easier to obtain an encapsulating resin composition composed of highly uniform particles. Furthermore, it is preferable to adjust the viscosity of mixture (c) to within the above range by adjusting the temperature of mixture (c) as needed.

[0053] Specific examples of methods for producing droplets include a method using a dispenser device 7. When the dispenser device 7 is used to produce the encapsulating resin composition, smooth droplets of the mixture (c) are easily produced, and as a result, an encapsulating resin composition made of particles with smooth surfaces is easily obtained. When the encapsulating resin composition made of particles with smooth surfaces is applied to a mold, powdering is less likely to occur.

[0054] A method for producing droplets using the dispenser device 7 will be described with reference to Fig. 5. The dispenser device 7 includes a base 12, a stage 13, a discharge unit 14, a first drive unit 15, a second drive unit 16, and a control unit (not shown).

[0055] The stage 13 has a flat upper surface and is disposed above the base 12. The object 3 is disposed on the stage 13. The object 3 has, for example, a flat surface. The stage 13 may be capable of fixing the object 3 to the stage 13. For example, the stage 13 may be provided with a fastener for fixing the object 3. The stage 13 may also be an adsorption table that fixes the object 3 placed on the stage 13 by negative pressure.

[0056] The first driving unit 15 holds the stage 13 above the base 12 and moves the stage 13 in one direction perpendicular to the up-down direction relative to the base 12. The first driving unit 15 includes, for example, an actuator and a motor.

[0057] The discharge unit 14 is disposed above the stage 13. The discharge unit 14 comprises a main body 17 and a nozzle 1 attached to the lower end of the main body 17 (see FIG. 5B). The nozzle 1 is disposed so that its discharge outlet faces downward. It is preferable that there are multiple discharge outlets in order to improve production efficiency. The main body 17 stores the mixture (c), and is provided with a mechanism (hereinafter referred to as a discharge mechanism) for intermittently supplying the mixture (c) to the nozzle 1.

[0058] The second driving unit 16 holds the discharge unit 14 relative to the stage 13 and moves the discharge unit 14 in a direction that is perpendicular to the up-down direction and also perpendicular to the direction X in which the stage 13 is moved by the first driving unit 15. The moving direction X here refers to the direction in which the target object 3 moves relative to the discharge port. The second driving unit 16 includes, for example, an actuator and a motor.

[0059] In addition, the second driving unit 16 holds the discharge unit 14 so as to be able to change the vertical position of the discharge unit 14. This makes it possible to change the vertical distance between the target object 3 and the nozzle 1.

[0060] Here, in the examples shown in Figures 5A to 5C, the vertical direction is defined as the opposing direction Z, the direction in which the stage 13 is moved by the first driving unit 15 is defined as the perpendicular direction Y, and the direction in which the discharge unit 14 is moved by the second driving unit 16 is defined as the moving direction X.

[0061] When the dispenser device 7 shown in FIG. 5 is operated, the second driving unit 16 moves the discharge unit 14 above the target object 3 in one direction of the movement direction X (hereinafter referred to as the first direction) while the stage 13 is stopped. As a result, with the discharge outlet of the nozzle 1 facing the target object 3, the target object 3 moves relative to the nozzle 1 in the opposite direction to the first direction of the movement direction X (hereinafter referred to as the second direction). While the discharge unit 14 is moving, the discharge mechanism in the discharge unit 14 is activated, and the mixture (c) is discharged from the discharge outlet of the nozzle 1 in the discharge unit 14. As a result, the mixture (c) discharged from the discharge outlet reaches the target object 3. Subsequently, the discharge mechanism is stopped, and the discharge of the mixture (c) from the discharge outlet is stopped, and the second driving unit 16 stops the movement of the discharge unit 14.

[0062] When the second drive unit 16 moves the discharge unit 14, the second drive unit 16 first starts moving the discharge unit 14 from a stopped state. At this time, for example, the second drive unit 16 first increases the movement speed of the discharge unit 14, then moves the discharge unit 14 at a constant speed, and then decreases the movement speed of the discharge unit 14, stopping the discharge unit 14. In this case, preferably, the discharge mechanism is stopped while the discharge unit 14 is stopped, so that the mixture (c) is not discharged from the discharge port. Even while the speed of the discharge unit 14 is increasing after the discharge unit 14 starts moving, the mixture (c) is not discharged from the discharge port. After the movement speed of the discharge unit 14 becomes constant, the discharge mechanism is activated, so that the mixture (c) is discharged from the discharge port. Before the movement speed of the discharge unit 14 decreases, the discharge mechanism is stopped, stopping the discharge of the mixture (c) from the discharge port. Next, the movement speed of the discharge unit 14 decreases without the mixture (c) being discharged from the discharge port, and then the discharge unit 14 is stopped. In this case, the mixture (c) is discharged from the discharge port only while the discharge part 14 is moving at a constant speed, so that uneven distribution of the mixture (c) on the target object 3 is particularly unlikely to occur.

[0063] After the second driving unit 16 stops the movement of the discharge unit 14, the first driving unit 15 then moves the stage 13 a fixed distance in one direction of the orthogonal direction Y (hereinafter referred to as the third direction) and stops it. As a result, the target object 3 moves a fixed distance in the third direction of the orthogonal direction Y relative to the nozzle 1.

[0064] Next, with the stage 13 stopped, the second driving unit 16 moves the discharge unit 14 above the target object 3 in a second direction in the movement direction X. As a result, with the discharge outlet of the nozzle 1 facing the target object 3, the target object 3 moves in a first direction in the movement direction X relative to the nozzle 1. While the discharge unit 14 is moving, the discharge mechanism in the discharge unit 14 is activated, and the mixture (c) is discharged from the discharge outlet of the nozzle 1 in the discharge unit 14. As a result, the mixture (c) discharged from the discharge outlet reaches the target object 3. Next, the discharge mechanism is stopped, and the discharge of the mixture (c) from the discharge outlet stops, and the second driving unit 16 stops the movement of the discharge unit 14.

[0065] After the second driving unit 16 stops the movement of the discharge unit 14, the first driving unit 15 subsequently moves the stage 13 a fixed distance in the third direction of the orthogonal direction Y and then stops the stage 13. As a result, the target object 3 moves a fixed distance in the third direction of the orthogonal direction Y relative to the nozzle 1.

[0066] By repeating the above operations, droplets of the mixture (c) are deposited on the target object 3.

[0067] The configuration and operation of the dispenser device 7 are not limited to those described above.

[0068] When droplets of the mixture (c) are produced by the dispenser device 7, droplets having a desired shape and size can be produced by appropriately setting the discharge conditions of the dispenser device 7.

[0069] The mixture (c) is intermittently discharged from the nozzle 1 of the dispenser device 7. When the mixture (c) is intermittently discharged from the nozzle 1, the mixture (c) discharged from the discharge port is formed into granules aligned in the moving direction X on the target object 3. That is, granular droplets of the mixture (c) are obtained on the target object 3. When these granular droplets of the mixture (c) are dried, particles such as those shown in FIG. 1A are likely to be obtained. However, even when the mixture (c) is intermittently discharged from the nozzle 1, depending on the interval at which the mixture (c) is discharged and the moving speed of the target object 3, the droplets of the mixture (c) may join together on the target object 3, forming a line of the mixture (c). That is, linear droplets of the mixture (c) are obtained on the target object 3. When this linear mixture (c) is dried, particles such as those shown in FIG. 1B or 1C are likely to be obtained.

[0070] The method for producing droplets is not limited to the method using a dispenser. Other methods for producing droplets include, for example, a method in which the mixture (c) is applied to a flat surface using a screen printer.

[0071] (drying process) Next, the droplets of mixture (c) deposited on the flat surface are dried. Examples of methods for drying the droplets include methods of drying by heating the droplets. Examples of heating methods include methods using drying devices such as a dryer or a forced air circulation type incubator, or a laboratory plate. The drying process includes a first heating step in which the droplets are heated, and a second heating step following the first heating step in which the droplets are heated. It is preferable that the heating temperature in the second heating step is higher than the heating temperature in the first heating step. This is because performing the heating steps in stages can suppress the rapid vaporization and expansion of the solvent contained in the droplets, thereby making it less likely for the droplets to explode.

[0072] The heating temperature in the first heating step is preferably set so that the solvent in the droplets can be reduced without causing the droplets to explode, and the heating temperature in the second heating step is preferably set so that the solvent in the droplets can be sufficiently reduced. That is, the heating temperatures in the first heating step and the second heating step are preferably set appropriately according to the solvent used.

[0073] The temperature difference between the heating temperature in the first heating step and the second heating step is preferably 10°C or higher and 60°C or lower, more preferably 20°C or higher and 40°C or lower.

[0074] The heating time in the first heating step is preferably 10 seconds or more, more preferably 30 seconds or more. In this case, the solvent contained in the droplets of mixture (c) is easily removed. Furthermore, the heating time in the first heating step is preferably 360 seconds or less, more preferably 60 seconds or less. In this case, particles can be produced efficiently.

[0075] The heating time in the second heating step is preferably 60 seconds or more, more preferably 120 seconds or more. In this case, the solvent contained in the droplets is easily removed. Furthermore, the heating time in the second heating step is preferably 600 seconds or less, more preferably 300 seconds or less. In this case, particles can be produced efficiently.

[0076] The concentration of the solvent contained in the encapsulating resin composition after the drying step is preferably less than 100 ppm. In this case, the concentration of the solvent contained in the encapsulating resin composition can be confirmed by the test method described in JIS K0067-1992.

[0077] The method of drying the droplets is not limited to the method of drying the droplets by heating. Other methods of drying the droplets include, for example, a method of drying the droplets by reducing the pressure. That is, a vacuum drying device may be used when drying the droplets. Furthermore, when drying the droplets, heating and reducing the pressure may be performed simultaneously.

[0078] <Method of manufacturing a semiconductor device> A method for manufacturing a semiconductor device using the encapsulating resin composition according to this embodiment will be described with reference to FIGS.

[0079] The method for manufacturing the semiconductor device 30 according to this embodiment includes an arrangement step of arranging the encapsulating resin composition 200 in the mold 20, and a compression molding step of molding the composition by compression molding to produce the encapsulant 100. The method for manufacturing the semiconductor device also preferably includes a preheating step of preheating the encapsulating resin composition 200 arranged in the mold 20, and also preferably includes a post-curing step of heating the encapsulant 100 produced by the compression molding.

[0080] Next, the above steps included in the semiconductor manufacturing method will be described in detail.

[0081] (Weighing process) 6A, the encapsulating resin composition 200 is weighed. More specifically, the encapsulating resin composition 200 made of a plurality of particles is supplied into a container 19, and the encapsulating resin composition 200 in the container 19 is weighed by an appropriate weighing means. When the encapsulating resin composition 200 is directly supplied to a lower mold 21 provided in the compression molding machine 2, the encapsulating resin composition 200 may be weighed by a weighing unit provided in the compression molding machine 2.

[0082] (Placement process) Next, a mold 20 shown in FIG. 6B is prepared. This mold 20 is installed in a compression molding machine 2. The mold 20 is composed of a lower mold 21 and an upper mold 22. The lower mold 21 has a concave shape so that the encapsulating resin composition 200 can be placed in the lower mold 21. The upper mold 22 is placed above the lower mold 21. A substrate 23 is placed on the surface of the upper mold 22 facing the lower mold 21. A plurality of semiconductor elements 24 are provided on the substrate 23. The substrate 23 is, for example, a semiconductor package substrate or a lead frame. The semiconductor elements 24 may include at least one element selected from the group consisting of, for example, a semiconductor chip such as an IC chip, a transistor, and a diode. Then, in the placement step, the encapsulating resin composition 200 is placed in the prepared mold 20 as shown in FIG. 6B. More specifically, the encapsulating resin composition 200 is placed in the lower mold 21. Because the encapsulating resin composition 200 is made of highly uniform particles, separation of the particles is unlikely to occur after the encapsulating resin composition 200 is spread on the lower mold 21. Therefore, uneven spreading of the encapsulating resin composition 200 containing particles can be suppressed when the encapsulating resin composition 200 is placed on the lower mold 21, and the encapsulating resin composition 200 can be spread uniformly inside the lower mold 21.

[0083] (Preheating process) Next, as shown in FIG. 6C , the lower mold 21 is heated to preheat the encapsulating resin composition 200 placed in the lower mold 21. The temperature of the lower mold 21 during preheating is preferably within a range of, for example, 2° C. to 200° C. The heating time is preferably within a range of 30 to 40 seconds. However, the temperature of the lower mold 21 during preheating is appropriately adjusted depending on the composition of the encapsulating resin composition 200 to be used.

[0084] (Compression molding process) Next, as shown in FIG. 6D , the encapsulating resin composition 200 is compressed to produce the encapsulating material 100. More specifically, the process is as follows: The lower mold 21 is heated and moved toward the upper mold 22. At this time, the encapsulating resin composition 200 melts due to the heating and becomes fluid. Therefore, the molten encapsulating resin composition 200 can cover the semiconductor element 24. The semiconductor element 24 is then encapsulated by the encapsulating resin composition 200. Furthermore, because the encapsulating resin composition 200 is uniformly distributed on the lower mold 21, a shortage of the encapsulating resin composition 200 to the mold 20 is unlikely to occur. Furthermore, because the encapsulating resin composition 200 is composed of highly uniform particles, the contact area with the lower mold 21 is likely to be large. Therefore, the encapsulating resin composition 200 is likely to melt within the lower mold 21. The temperature of the lower mold 21 in the compression molding process is preferably, for example, within a range of 130°C to 200°C. The compression time in the compression molding step is preferably within a range of, for example, 10 to 300 seconds. The compression pressure in the compression molding step is preferably within a range of, for example, 2.0 to 20.0 MPa. However, the temperature of the lower mold 21, the compression time, and the compression pressure in the compression molding step are appropriately adjusted depending on the composition of the encapsulating resin composition 200 used.

[0085] (Post-curing process) Next, as shown in FIG. 6E , the encapsulating resin composition 200 is cured. More specifically, the encapsulating resin composition 200 can be cured by heating the encapsulating resin composition 200 for a predetermined period of time while it is placed in the mold 20. This forms the encapsulating material 100, which is a cured product of the encapsulating resin composition 200. The semiconductor element 24 is then encapsulated by the encapsulating material 100. The temperature of the mold 20 in the post-curing step is preferably within a range of, for example, 100°C to 200°C. The compression time in the compression molding step is preferably within a range of, for example, 60 seconds to 300 seconds. The temperature of the lower mold 21 and the compression time in the compression molding step are adjusted appropriately depending on the composition of the encapsulating resin composition 200 used. After the encapsulating resin composition 200 is cured, the substrate 23 on which the semiconductor element 24 is provided can also be removed from the mold 20.

[0086] The above steps can provide a semiconductor device 30 in which a semiconductor element 24 is encapsulated with an encapsulant 100, which is a cured product of the encapsulating resin composition 200. The method for manufacturing the semiconductor device 30 is not limited to the above manufacturing method and may include other steps. The semiconductor device 30 manufactured by the above steps includes a substrate 23, a plurality of semiconductor elements 24 provided on the substrate 23, and an encapsulant 100 covering the plurality of semiconductor elements 24, as shown in FIG. 7 . [Example]

[0087] Specific examples of this embodiment will be described below, but this embodiment is not limited to the following examples.

[0088] Example 1 Example 1 was carried out as follows.

[0089] <Raw materials for encapsulating resin composition> The raw materials of the encapsulating resin compositions used in the examples are listed below. Reactive resin: Epoxy resin (biphenyl epoxy resin, phenol novolac epoxy resin 3:1), blending amount: 78 parts by weight Hardener: Phenolic resin hardener, amount: 60 parts by weight Curing accelerator: triphenylphosphine, amount: 1 part by weight Inorganic filler: fused silica (maximum particle size 20 μm or less), blending amount: 860 parts by weight Release agent: Natural carnauba wax, amount: 1 part by weight

[0090] <Solvent> The solvents used in the examples are listed below. Methyl ethyl ketone (MEK, boiling point: 79°C)

[0091] <Mixture preparation process> After weighing and blending the above-mentioned raw materials and solvent, the mixture was kneaded uniformly using a kneader (Kurimoto Iron Works, Ltd., Model: T5 KCR Kneader) to obtain a kneaded product. Next, this kneaded product was spread into a plate shape using a cooling conveyor (KBK Steel Products Co., Ltd.), and then crushed to obtain a pulverized product. This pulverized product was then mixed with the solvent using a mixer (Inoue Seisakusho Co., Ltd., Model: PLM-50) to produce a mixture. At this time, the ratio of solvent to the mixture was 15%, and the viscosity of the mixture at room temperature (25°C) was 16 Pa·s.

[0092] <Droplet production process> The prepared mixture was supplied to a JET-type dispenser (Musashi Engineering Co., Ltd., Model No. MJET-A-2-4CTR) and ejected onto an A4 sheet placed on a steel plate, creating droplets of the mixture on the A4 sheet. The ejection conditions are shown in Table 1.

[0093] <Drying process> Using an experimental plate (manufactured by AS ONE Corporation, model number: 1-5170-01), droplets of the mixture on an A4 sheet were dried by heating, and the encapsulating resin composition (specific gravity: 1.80 g / cm 3) was produced. The conditions for the first heating step and the second heating step are shown in Table 1. Then, an encapsulating resin composition consisting of a plurality of particles was obtained by this drying step. Here, a photograph of the particles of the encapsulating resin composition obtained in Example 1 is shown in FIG. 8. Furthermore, these particles correspond to the particle shape shown in FIG. 1A, and the particle surface is smooth.

[0094] (Examples 2 and 3) In Examples 2 to 3, encapsulating resin compositions were prepared in the same manner as in Example 1, except that the discharge conditions of the dispenser device in the droplet preparation step were different. The discharge conditions of the dispenser device for each of Examples 2 to 3 are shown in Table 1. The particles obtained in Examples 2 to 3 all correspond to the shape shown in FIG. 1A, and the particle surfaces were smooth.

[0095] (Comparative Example 1) Comparative Example 1 was carried out as follows.

[0096] <Raw materials for encapsulating resin composition> The same raw materials as in the example were used.

[0097] <Production method> The above-mentioned raw materials were weighed and mixed, and then kneaded uniformly using a kneader (T5 KCR Kneader, manufactured by Kurimoto, Ltd.) to obtain a kneaded mixture. Next, this kneaded mixture was spread into a plate shape using a cooling conveyor (PLM-50, manufactured by Inoue Manufacturing Co., Ltd.) and then crushed using a power mill crusher (P-3, manufactured by Dalton Co., Ltd.) to obtain an encapsulating resin composition of Comparative Example 1.

[0098] 9A and 9B show photographs of the encapsulating resin composition of Comparative Example 1. As can be seen from Fig. 9, the surface of the encapsulating resin composition of Comparative Example 1 is not smooth, and the particles are not uniform in shape and size.

[0099] Next, the encapsulating resin compositions obtained in the examples and comparative examples were subjected to the evaluation tests described below.

[0100] [Screening evaluation test] For Examples 1 to 3 and Comparative Example 1, a sieving test was conducted in accordance with the dry sieving test of JIS Z8815-1994, in which 400 g of the encapsulating resin composition obtained through the drying process was sieved through a 1 mm mesh sieve, a 0.85 mm mesh sieve, a 0.5 mm mesh sieve, and a 0.3 mm mesh sieve selected in the order listed, and the encapsulating resin composition was sieved for 10 minutes through each sieve. The results of the sieving test are shown in Table 1. The shape, size, and type of the sieves used are also shown below. Sieve shape: cylindrical Sieve size: 200mm diameter Sieve type: woven mesh

[0101] [Sowing ability evaluation test] Regarding Examples 1 to 3 and Comparative Example 1, 10 g of the encapsulating resin composition obtained through the drying step was spread in a mold having a size of 7.424 cm using a molding machine (manufactured by TOWA Corporation, model number CPM-1080), and then molded at a molding temperature of 175°C for 120 seconds to cure the encapsulating resin composition.

[0102] The sowing properties were evaluated visually, and the results are shown in Table 1 using the following notation method. "A": No areas in the mold are found that are not covered with the cured product of the encapsulating resin composition. "B": There are areas in the mold that are not covered with the cured product of the encapsulating resin composition.

[0103] When the encapsulating resin compositions of Examples 1 to 3 were used, no areas in the mold were found that were not covered with the cured product of the encapsulating resin composition, confirming that the spreadability of the encapsulating resin composition was good. In contrast, when the encapsulating resin composition of Comparative Example 1 was used, areas in the mold were found that were not covered with the cured product of the encapsulating resin composition, confirming that the spreadability of the encapsulating resin composition was not as good as in Examples 1 to 3. Furthermore, when Example 3 was compared with Example 3, which had a lower percentage of particles passing through a 0.5 mm sieve than Example 3, the appearance of the encapsulating resin composition when spread on the mold was flatter in Example 3.

[0104] [Table 1]

[0105] (Drying process conditions) Regarding the drying step carried out in Example 1, the influence on the encapsulating resin composition when the drying conditions in this drying step were changed was confirmed.

[0106] [Particle shape evaluation test] In Example 1, when the droplets were dried in the drying step, the conditions for this drying step were set to each of Conditions 1 to 3 shown in Table 2, and the shape of the particles of the encapsulating resin composition obtained at that time was visually confirmed, and the results are shown in Table 2 using the following notation method. "A": No droplet explosion occurs and particle shape is maintained "B": Droplet explosion occurs and particle shape is not maintained.

[0107] [Table 2]

[0108] When the drying conditions in the drying step were set to Condition 1, i.e., when the drying step was performed under the conditions of Example 1, the heating step was performed stepwise, so droplet explosion did not occur. In contrast, when the drying step conditions were set to Condition 2 or Condition 3, it was confirmed that droplet explosion occurred during the drying step, and the desired particles could not be obtained. [Explanation of symbols]

[0109] 1 nozzle 2. Compression molding machine 3. Object 4, 40, 41, 42 particles 5 flat surface 6 curved surface 7. Dispenser device 12 Foundation 13 Stages 14 Discharge part 15 First drive unit 16 Second drive unit 17 Main Unit 19 Container 20 Mold 21 Lower mold 22 Upper mold 23 Circuit Board 24 Semiconductor elements 30 Semiconductor devices 51 line segments 61 curve 100 Encapsulating material 200 Sealing resin composition

Claims

1. an encapsulating resin composition comprising a plurality of particles, wherein when a sieving test is performed in accordance with the dry sieving test of JIS Z8815-1994 in which the encapsulating resin composition is sieved using a sieve having a mesh size of 1 mm, a sieve having a mesh size of 0.85 mm, a sieve having a mesh size of 0.5 mm, and a sieve having a mesh size of 0.3 mm in the specified order, 80 mass% or more of the plurality of particles are retained on any one of the sieves having a mesh size of 0.85 mm, the sieve having a mesh size of 0.5 mm, and the sieve having a mesh size of 0.3 mm; The plurality of particles include particles having a flat surface and a curved surface, and at least one cross section perpendicular to the flat surface has a contour shape represented by a line segment originating from the flat surface and a curve that is a convex curve originating from the curved surface and connecting two ends of the line segment. Sealing resin composition.

2. When the sieving test is performed, 90 mass% or more of the particles are retained on any one of the sieves having a mesh size of 0.85 mm, the sieve having a mesh size of 0.5 mm, and the sieve having a mesh size of 0.3 mm. The encapsulating resin composition according to claim 1 .

3. When the sieving test is performed, the total of the particles retained on the sieve with a mesh size of 0.85 mm, the particles retained on the sieve with a mesh size of 0.5 mm, and the particles retained on the sieve with a mesh size of 0.3 mm is 95% by mass or more of the total particles. The encapsulating resin composition according to claim 1 or 2.

4. The curved surface is a convex curved surface that is in contact with the outer periphery of the flat surface. The encapsulating resin composition according to claim 1 .

5. The length L1 of the line segment and the length L2 of the curve have the relationship shown in the following equation (1): 1.1×L1<L2<2×L1...(1) The encapsulating resin composition according to claim 1 or 4.

6. A method for producing the encapsulating resin composition according to any one of claims 1 to 5, comprising: a droplet-forming step of depositing droplets of a mixture containing raw materials for the encapsulating resin composition and a solvent on a flat surface; and a drying step of drying the droplets. A method for producing an encapsulating resin composition.

7. The drying step includes a first heating step of heating the droplets, and a second heating step of heating the droplets subsequent to the first heating step, wherein the heating temperature in the second heating step is higher than the heating temperature in the first heating step. A method for producing the encapsulating resin composition according to claim 6.

8. A method for manufacturing a semiconductor device comprising: a semiconductor element; and an encapsulant that encapsulates the semiconductor element, a step of placing the encapsulating resin composition according to claim 1 in a mold; The encapsulating resin composition is molded by a compression molding method to produce the encapsulating material. and A method for manufacturing a semiconductor device.

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