Elements, electronic devices, electronic equipment and systems

Abstract

[Problem] To provide: a laminated structure with excellent bending strength; an element; an electronic device; an electronic apparatus; and a system. [Solution] This laminated structure is constituted of at least a first layer and a second layer that are layered onto a crystalline substrate. The first layer is made of a metallic compound film, and the second layer is made of a metal film of a metal that undergoes martensitic transformation by heat treatment or machining. The crystalline substrate, the first layer, and the second layer are aligned in roughly the same crystal axis direction. The laminated structure is used to manufacture a piezoelectric element or a semiconductor element.

Description

[Technical Field]

[0001] The present invention relates to a laminated structure, an electronic device, an electronic apparatus, and a system. [Background technology]

[0002] Piezoelectric thin films made of lead zirconate titanate (Pb(Zr,Ti)O3) (hereinafter referred to as PZT), which has excellent piezoelectric and ferroelectric properties, are being investigated, and piezoelectric thin films are being applied to memory elements such as non-volatile memory (FeRAM), as well as MEMS (Micro Electro Mechanical Systems) technology such as inkjet heads and acceleration sensors.

[0003] In recent years, it has been studied to form a piezoelectric film with good piezoelectric properties on a Pt film by forming a (200)-oriented Pt film on a (100)-oriented Si substrate via a (200)-oriented ZrO2 film or the like (Patent Document 1). However, there is a problem that cracks or breaks occur in the crystal substrate or the like due to bending stress during film formation or use as a piezoelectric element, and durability and long-term use are still not satisfactory, so a piezoelectric element that is resistant to bending stress has been desired. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-154015 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a laminated structure, an element, an electronic device, an electronic equipment, and a system that are excellent in bending strength. [Means for solving the problem]

[0006] As a result of intensive research to achieve the above object, the inventors have succeeded in laminating a metal film made of a martensitically transforming metal oriented in the (100) direction on a crystal substrate oriented in the (100) direction, and have discovered that by further depositing a piezoelectric film on top of that, a piezoelectric element with excellent bending strength can be realized, and have found that such an element can solve all of the above-mentioned conventional problems at once. Furthermore, after obtaining the above findings, the present inventors conducted further studies and completed the present invention.

[0007] That is, the present invention relates to the following inventions. [1] A laminated structure in which at least a first layer and a second layer are laminated on a crystal substrate, the first layer is made of a metal compound film, the second layer is made of a metal film of a metal that undergoes martensitic transformation by heat treatment or processing, A laminated structure, wherein the crystal substrate, the first layer, and the second layer are oriented in substantially the same crystal axis direction. [2] The laminated structure according to [1], wherein the metal contains Fe. [3] The laminated structure according to [1] or [2], wherein the metal contains Cr. [4] The laminate structure according to any one of [1] to [3], wherein the metal contains Ni. [5] The laminate structure according to any one of [1] to [4], wherein the metal contains Fe and Cr. [6] The laminate structure according to any one of [1] to [5], wherein the metal is stainless steel. [7] The laminate structure according to any one of [1] to [6], wherein the metal film has a thickness of 100 μm or less. [8] The laminate structure according to any one of [1] to [7], wherein the metal film has a thickness of 1 μm to 10 μm. [9] The laminate structure according to any one of [1] to [8], wherein the metal compound film contains Hf and / or Zr.

[10] The laminated structure according to any one of [1] to [9], wherein the metal compound film is made of an oxide or nitride containing Hf and / or Zr.

[11] The laminated structure according to any one of [1] to

[10] , wherein the crystal axis direction is a (100) direction.

[12] The laminated structure according to any one of [1] to

[11] , wherein the crystal substrate is a Si substrate.

[13] The laminate structure according to any one of [1] to

[12] , wherein a piezoelectric layer or a semiconductor layer is laminated on the second layer via a third layer and a fourth layer, the third layer being made of a metal different from the metal, and the fourth layer being made of a conductive metal oxide.

[14] The laminate structure according to

[13] , wherein the third layer contains a metal belonging to Group 10 or 11 of the periodic table.

[15] The laminate structure according to

[13] or

[14] , wherein the conductive metal oxide contains Sr and / or Ru.

[16] The laminated structure according to any one of

[13] to

[15] , wherein the piezoelectric layers are laminated, and the piezoelectric layers contain Pb and Ti.

[17] A device including a laminated structure, characterized in that the laminated structure is the laminated structure according to any one of [1] to

[16] above.

[18] The element according to

[17] , which is a piezoelectric element or a semiconductor element.

[19] An electronic device including an element, characterized in that the element is the element according to

[17] or

[18] .

[20] An electronic device including an electronic device, characterized in that the electronic device is the electronic device described in

[19] above.

[21] A system including an electronic device, characterized in that the electronic device is the electronic device described in

[20] above. [Effects of the Invention]

[0008] The laminated structure, element, electronic device, electronic equipment and system of the present invention exhibit the effect of excellent bending strength. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a diagram schematically illustrating an example of a preferred embodiment of the laminated structure of the present invention. [Figure 2] FIG. 1 shows XRD diffraction patterns in examples. [Figure 3] FIG. 1 is a diagram illustrating a test piece of an example product in a test example. [Figure 4] FIG. 1 is a diagram illustrating a test piece of a comparative example in a test example. [Figure 5] FIG. 10 is a diagram showing the results of a bending strength test in a test example. [Figure 6] 1A and 1B are diagrams schematically illustrating a preferred example of an embodiment of a MEMS transducer according to the present invention. [Figure 7] FIG. 1 is a diagram showing an example of a cross section of a portion of a wafer provided with a piezoelectric actuator, as a suitable application example of the present invention to a fluid discharge device. [Figure 8] FIG. 2 is a diagram schematically illustrating a film forming apparatus preferably used in the examples. DETAILED DESCRIPTION OF THE INVENTION

[0010] The laminated structure of the present invention is a laminated structure having at least a first layer and a second layer laminated on a crystal substrate, wherein the first layer is a metal compound film, the second layer is a metal film of a metal that undergoes martensitic transformation upon heat treatment or processing, and the crystal substrate, the first layer, and the second layer are each oriented in approximately the same crystal axis direction. The crystal axis direction is not particularly limited, but is preferably the (100) or (111) direction, and more preferably the (100) direction.

[0011] The metal is not particularly limited as long as it is a metal that undergoes martensitic transformation by heat treatment or processing, and may be a known metal. The metal is usually contained in the metal film as a main component of the metal film. Examples of the metal that undergoes martensitic transformation include Fe-Cr-Ni, Fe, Fe-Ni, Fe-Ni-Co, Fe-Si, Fe-Cr, Fe-Mn, Fe-Mn-C, Fe-Mn-Ni, Fe-Mn-Cr, Fe-C, Fe-N, Fe-Ni-C, Fe-Cr-C, Fe-Cu-C, Fe-Si-C, Fe-Cr-Ni-C, Co, Co-Ni, Co-Fe, Examples of suitable metals include Mn-Cu, In-Tl, In-Tl-Li, Na, Zr, Tl, Hf, Ti, Ti-Al, Ti-Cu, Ti-Cr, Ti-Fe, Ti-Mn, Ti-Mo, Ti-V, Ti-Zr, Ti-Al-V, Zr-U, Cu-Al-Ni, Cu-Al, Ag-Cd, Au-Cd, Au-Cd-Cu, Li, Li-Mg, Cu-Zn, U, U-Cr, and Hg. In the present invention, the metal preferably contains Fe, Cr, or Ni, more preferably Fe and Cr, and even more preferably stainless steel. This preferred range can improve bending strength. The term "major component" refers to a metal whose atomic ratio in the metal film is 0.5 or greater. In the present invention, the atomic ratio of the metal to all metal elements in the metal film is preferably 0.7 or greater, more preferably 0.8 or greater.

[0012] In the present invention, the metal film is preferably oriented in the (100) direction. The "oriented in the (100) direction" means that the crystal orientation angle detected by X-ray diffraction is oriented in the (100) direction, and more specifically, the peak ratio in the (100) direction to the total peaks of the metal film detected by X-ray diffraction is 50% or more, and preferably the peak ratio is 90% or more.

[0013] In the present invention, the thickness of the metal film is preferably 100 μm or less, and more preferably 1 μm to 10 μm, which makes it superior as an intermediate film for crystal growth in a functional film.

[0014] The metal film can be easily obtained by forming a metal compound film containing Hf and / or Zr by crystal growth as a first layer in the (100) direction on a crystalline substrate such as a Si substrate, and then forming the same metal film by crystal growth as a second layer. This is a new finding made by the present inventors. The metal compound film is preferably an oxide or nitride containing Hf and / or Zr, and more preferably a nitride containing Hf and / or Zr.

[0015] The crystal substrate (hereinafter simply referred to as "substrate") is not particularly limited in terms of substrate material, etc., as long as it does not impede the objectives of the present invention, and may be a known crystal substrate. It may be an organic compound or an inorganic compound. In the present invention, the crystal substrate preferably contains an inorganic compound. In the present invention, the substrate preferably has crystals on a portion or all of its surface, more preferably a crystal substrate having crystals on all or a portion of its main surface on the crystal growth side, and most preferably a crystal substrate having crystals on the entire main surface on the crystal growth side. The crystal is not particularly limited as long as it does not impede the objectives of the present invention, and the crystal structure is also not particularly limited. However, crystals of a cubic, tetragonal, trigonal, hexagonal, orthorhombic, or monoclinic system are preferred, and crystals oriented in a (100) or (200) plane are more preferred. The crystal substrate may also have an off-angle, and examples of the off-angle include an off-angle of 0.2° to 12.0°. Here, the "off-angle" refers to the angle between the substrate surface and the crystal growth surface. The shape of the substrate is not particularly limited as long as it is plate-shaped and serves as a support for the epitaxial film. It may be an insulating substrate or a semiconductor substrate. However, in the present invention, the substrate is preferably a Si substrate, more preferably a crystalline Si substrate, and most preferably a (100)-oriented crystalline Si substrate. Examples of the substrate material include Si substrates and one or more metals belonging to Groups 3 to 15 of the periodic table, or oxides of these metals. The shape of the substrate is not particularly limited and may be substantially circular (e.g., circular, elliptical, etc.) or polygonal (e.g., triangular, square, rectangular, pentagonal, hexagonal, heptagonal, octagonal, nonagonal, etc.), and various shapes can be suitably used. Furthermore, in the present invention, a large-area substrate can be used, and the use of such a large-area substrate allows for a larger area of ​​the epitaxial film.

[0016] In the present invention, the crystal substrate preferably has a flat surface. However, it is also preferable for the crystal substrate to have an uneven surface on part or all of its surface, as this can improve the quality of the crystal growth of the epitaxial film. The crystal substrate having an uneven surface may have an uneven surface consisting of concave or convex portions formed on part or all of its surface. The uneven surface is not particularly limited as long as it consists of convex or concave portions. It may be an uneven surface consisting of convex portions, an uneven surface consisting of concave portions, or an uneven surface consisting of convex and concave portions. The uneven surface may be formed of regular convex or concave portions, or irregular convex or concave portions. In the present invention, the uneven surface is preferably formed periodically, and more preferably in a periodic and regularly patterned form. The shape of the uneven surface is not particularly limited, and examples thereof include stripes, dots, meshes, and random patterns. In the present invention, a dot or stripe pattern is preferred, and a dot pattern is more preferred. Furthermore, when the concave-convex portions are patterned periodically and regularly, the pattern shape of the concave-convex portions is preferably a polygonal shape such as a triangle, a quadrangle (e.g., a square, a rectangle, or a trapezoid), a pentagon, or a hexagon, or a circle, an ellipse, or the like. When the concave-convex portions are formed in a dotted pattern, the lattice shape of the dots is preferably a lattice shape such as a square lattice, an oblique lattice, a triangular lattice, or a hexagonal lattice, and more preferably a triangular lattice. The cross-sectional shape of the concave or convex portions of the concave-convex portions is not particularly limited, but examples thereof include a U-shape, an inverted U-shape, a wave shape, or a polygonal shape such as a triangle, a quadrangle (e.g., a square, a rectangle, or a trapezoid), a pentagon, or a hexagon. The thickness of the crystal substrate is not particularly limited, but is preferably 50 to 2000 μm, and more preferably 100 to 1000 μm.

[0017] The piezoelectric layer is not particularly limited as long as it is a piezoelectric layer made of a piezoelectric material. The piezoelectric material may be a known piezoelectric material, but in the present invention, it is preferable that the piezoelectric material contains Pb and Ti. The semiconductor layer is not particularly limited as long as it is a semiconductor layer made of a semiconductor. The semiconductor may be a known semiconductor, but in the present invention, it is preferable that the semiconductor contains Si, SiC, GaN, or Ga2O3. In this specification, the terms "film" and "layer" may be interchangeable depending on the case or situation.

[0018] In the present invention, the piezoelectric layer or the semiconductor layer is preferably stacked on the second layer via a third layer and a fourth layer. The third layer is preferably made of a metal different from the metal, and the fourth layer is preferably made of a conductive metal oxide. Examples of the metal in the third layer include gold, silver, platinum, palladium, silver-palladium, copper, nickel, and alloys thereof. In the present invention, the third layer preferably contains a metal belonging to Group 10 or 11 of the periodic table, and more preferably contains platinum.

[0019] The conductive metal oxide is not particularly limited as long as it does not impair the object of the present invention, and may be any known conductive metal oxide. However, in the present invention, it preferably contains Sr and / or Ru, and is more preferably an SRO film containing Sr and Ru.

[0020] The first, second, third, and fourth layers can be deposited by known deposition techniques. In the present invention, the deposition techniques are preferably vapor deposition (including MBE) or sputtering. The thickness of each layer is not particularly limited, but is preferably 10 nm to 100 μm, and more preferably 50 nm to 30 μm.

[0021] The metal film or laminate structure obtained as described above can be suitably used in elements such as piezoelectric elements or semiconductor elements using known means. Furthermore, the elements can be suitably used in electronic devices according to conventional methods. For example, various electronic devices can be constructed by connecting the laminate structure as a piezoelectric element to a power source or an electric / electronic circuit, mounting it on a circuit board, or packaging it. In the present invention, the electronic device is preferably a piezoelectric device, and can be used as a piezoelectric device in electronic devices such as inkjet printer heads, microactuators, gyroscopes, and motion sensors. Furthermore, for example, by connecting an amplifier and a rectifier circuit and packaging it, it can be used as various sensors such as magnetic sensors. It can also be applied to constant-voltage-driven memories, and, for example, by connecting a storage element and a rectifier power management circuit, it can become an energy conversion device (energy harvester) that generates power from external magnetic fields or vibrations. The energy conversion device can be incorporated into power supply systems and wearable devices (e.g., earphones / hearable devices, smart watches, smart glasses, smart contact lenses, cochlear implants, cardiac pacemakers, etc.). In the present invention, the laminated structure is preferably used in, for example, smart glasses, AR headsets, MEMS mirrors for LiDAR systems, piezoelectric MEMS ultrasonic transducers (PMUTs) for advanced medical applications, and piezo heads for commercial and industrial 3D printers.

[0022] The electronic device is suitably used in electronic devices in the usual manner, and can be applied to various electronic devices in addition to the above-mentioned electronic devices, and more specific examples of suitable electronic devices include liquid ejection heads, liquid ejection apparatuses, vibration wave motors, optical devices, vibration devices, imaging devices, piezoelectric acoustic components, and audio playback devices, audio recording devices, mobile phones, and various information terminals that have such piezoelectric acoustic components.

[0023] Furthermore, the electronic device is also applied to a system in the usual manner, and examples of such a system include a sensor system. [Example]

[0024] Example 1 The crystal growth surface of a Si substrate (100) was treated by RIE, and a HfZrN single crystal was formed on the Si substrate by thermally reacting a metal vapor deposition source with nitrogen in the presence of nitrogen. The deposition conditions for this film formation were as follows: Vapor deposition source: Hf, Zr Voltage: 3.5~4.75V Pressure: 3×10 -2 ~6×10 -2 Pa Substrate temperature: 450~700℃

[0025] The evaporation deposition apparatus used for depositing the HfZrN single crystal is shown in Figure 8. The deposition apparatus in Figure 8 includes at least metal sources 1101a-1101b in a crucible, earths 1102a-1102h, ICP electrodes 1103a-1103b, cut filters 1104a-1104b, DC power supplies 1105a-1105b, RF power supplies 1106a-1106b, lamps 1107a-1107b, Ar source 1108, reactive gas source 1109, power supply 1110, substrate holder 1111, substrate 1112, cut filter 1113, ICP ring 1114, vacuum chamber 1115, and rotation shaft 1116. The ICP electrodes 1103a-1103b in Figure 8 have a generally concave curved or parabolic shape curved toward the center of the substrate 1112.

[0026] As shown in FIG. 8, a substrate 1112 is secured on a substrate holder 1111. Next, a power supply 1110 and a rotation mechanism (not shown) are used to rotate a rotation shaft 1116, thereby rotating the substrate 1112. The substrate 1112 is heated by lamps 1107a-1107b, and a vacuum chamber 1115 is evacuated using a vacuum pump (not shown) to create a vacuum or reduced pressure. Thereafter, Ar gas is introduced from an Ar source 1108 into the vacuum chamber 1115, and argon plasma is formed on the substrate 1112 using DC power supplies 1105a-1105b, RF power supplies 1106a-1106b, ICP electrodes 1103a-1103b, cut filters 1104a-1104b, and earths 1102a-1102h, thereby cleaning the surface of the substrate 1112.

[0027] Ar gas is introduced into the vacuum chamber 1115, and a reactive gas is introduced using a reactive gas source 1109. At this time, lamps 1107a to 1107b, which are lamp heaters, are turned on and off alternately, thereby enabling the formation of a better quality crystal growth film.

[0028] Next, a SUS304 single crystal film was formed in the same manner as above, except that Fe, Cr, and Ni were used as the metals of the evaporation source.

[0029] Next, a platinum (Pt) metal film was formed as a conductive film on the single crystal film of the crystalline metal oxide by sputtering under the following conditions. Equipment: ULVAC sputtering equipment QAM-4 Pressure: 1.20×10 -1 Pa Target: Pt Power: 100W(DC) Thickness: 100nm Substrate temperature: 450~600℃

[0030] Next, an SRO film was formed on the conductive film by sputtering under the following conditions. Equipment: ULVAC sputtering equipment QAM-4 Power: 150W(RF) Gas: Ar Pressure: 1.8Pa Substrate temperature: 600℃ Thickness: 20nm

[0031] Next, a PbTiO3 film was formed on the SRO film as a piezoelectric film. The resulting laminated structure had good adhesion and crystallinity. Furthermore, the crystal substrate of the laminated structure, the single crystal film of the crystalline metal oxide, and the conductive film were measured for their respective crystallinity using an X-ray diffractometer. Figure 2 shows the results of the XRD measurement. As is clear from Figure 2, a SUS304 single crystal film with good crystallinity was formed, and the crystallinity of the PbTiO3 film and other materials was also good.

[0032] (Test example) As a test example, a cantilever beam of a microelement, as shown in Figures 3 and 4, was fabricated using a FIB FB2100 (Hitachi High-Technologies Corporation). Its fracture strength characteristics were evaluated using a nanoindenter, NanoTest Xtreme (Micro Materials), and the results are shown in Figure 5. Figure 5 shows that the fracture strength of Si was approximately 1 GPa, a fairly constant value. Considering that the bending strength of bulk Si single crystal material is approximately 300 MPa (according to a paper), this demonstrates the significant strength of micromaterials. Furthermore, the fracture strength of a SUS304 single crystal thin film was approximately 5 GPa, approximately five times the bending strength of a Si single crystal. This suggests that using a SUS304 single crystal thin film for the beams of MEMS devices (the moving part, equivalent to the active layer of an SOI substrate) can be expected to significantly improve not only the displacement of MEMS devices but also their lifespan characteristics.

[0033] (Application example) Examples of applications of the resulting laminated structure will be described in more detail below with reference to the drawings, but the present invention is not limited to these examples. In the present invention, unless otherwise specified, piezoelectric devices and the like can be manufactured from the laminated structure using known means.

[0034] 6 shows an embodiment of an acoustic MEMS transducer constituting a MEMS microphone in which the laminated structure of the present invention is preferably used. The MEMS transducer can constitute an acoustic emission device (for example, a speaker, etc.).

[0035] The MEMS microphone constructed using the acoustic MEMS transducer of FIG. 6 is a cantilever-type MEMS microphone, and includes a Si substrate 21 having two cantilever beams 28A and 28B and a cavity 30. Each of the cantilever beams 28A and 28B is fixed to the substrate 21 at its respective end, with a gap 9 between the cantilever beams 8A and 8B. The cantilever beams 8A and 8B are formed, for example, by a laminated structure including multiple piezoelectric layers (PZT films) 26a and 26b, which are alternated with multiple electrode layers, namely, Pt films 24a, 24b, and 24c and SRO films 25a, 25b, 25c, and 25d. The Pt film 24a is provided on a SUS film 23, and a HfZrN film 23 is provided on the SUS film 23. Compared to the case of using SiO2 or SiN, the HfZrN film 23 has excellent adhesion to the Si substrate and crystallinity, and the crystallinity can be further improved up to multiple layers thereon, and furthermore, the piezoelectric properties and durability are also excellent.

[0036] FIG. 7 illustrates an example of a printing application for which the laminate structure of the present invention is suitable, particularly an application to a fluid ejection device that can be used in the form of an inkjet printhead. Specifically, it shows a cross-sectional view of a portion of a wafer equipped with a piezoelectric actuator including Pt films 34a, 34b and SRO films 35a, 35b as electrode layers and a PZT film 36 as a piezoelectric film. In addition to the piezoelectric actuator, the wafer in FIG. 7 also includes a chamber 41 for containing a fluid. The chamber 41 is configured to receive fluid from a tank (not shown) via a flow path 40. The wafer in FIG. 10 also includes a Si substrate 31, on which a HfZrN film 32 and a SUS film 33 are laminated, facing the chamber 41. In FIG. 10, the use of the HfZrN film 32 provides superior adhesion and crystallinity to the Si substrate compared to the use of SiO2, SiN, or the like. This further improves the crystallinity of the layers above, resulting in superior piezoelectric properties and durability. The HfZrN film 32 has, for example, a quadrangular shape in a top view (not shown), and this shape may be, for example, any of a square, a rectangle, a rectangle with rounded corners, a parallelogram, and the like.

[0037] On the SUS film 33, a Pt film 34a, an SRO film 35a, a piezoelectric film (PZT film) 36, an SRO film 35b, and a Pt film 34b are laminated in this order to form a piezoelectric actuator. The piezoelectric actuator further includes an insulating film 37 extending over the electrodes 34a and 35a, the piezoelectric film 36, and the electrodes 34b and 35b. The insulating film 37 includes a dielectric material used for electrical insulation. Such a dielectric material may be a known dielectric material, such as a SiO2 layer, a SiN layer, or an Al2O3 layer. The thickness of the insulating layer containing the insulating film as a constituent material is not particularly limited, but is preferably between about 10 nm and about 10 μm. Furthermore, a conductive path 39 is provided on the insulating layer (insulating film) 37 and contacts the electrodes 34a and 35a and the electrodes 34b and 35b, respectively, enabling selective access during use. The conductive path may be made of a known conductive material, and a suitable example of such a conductive material is aluminum (Al). A passivation layer 42 is provided on the insulating layer 37, the electrodes 34b and 35b, and the conductive path 39. The passivation layer 42 may be made of any dielectric material used for passivating the piezoelectric actuator. The dielectric material is not particularly limited and may be any known dielectric material. Suitable examples of the dielectric material include SiN and SiON (silicon oxynitrate). The thickness of the passivation layer is not particularly limited, but is preferably between approximately 0.1 μm and approximately 3 μm. A conductive pad 38 is also provided along the piezoelectric actuator and electrically connected to the conductive path 39. The passivation layer 42 functions as a barrier layer to protect the piezoelectric element from humidity and other factors. [Industrial Applicability]

[0038] The metal film and laminate structure of the present invention are suitably used as electronic devices such as piezoelectric devices, and are suitably used in electronic equipment, sensor systems, and the like. [Explanation of symbols]

[0039] 1 Crystal substrate (Si substrate) 2 HfZrN film 3 SUS membrane (FeCrNi membrane) 4 Pt membrane 5 SRO membrane 6 Piezoelectric layer (PbTiO film) 21 Crystalline substrate (Si substrate) 22 HfZrN film 23 SUS membrane 24a Pt membrane 24b Pt membrane 24c Pt membrane 25a SRO membrane 25b SRO membrane 25c SRO membrane 25d SRO membrane 26a PZT membrane 26b PZT membrane 28A Cantilever Beam 28B Cantilever Beam 29 Gap 30 cavities 31 Crystal substrate (Si substrate) 32 HfZrN film 33 SUS membrane 34a Pt membrane 34b Pt membrane 35a SRO membrane 35b SRO membrane 36 PZT membrane 37 Insulating film 38 Conductive Pad 39 Conductive Path 40 flow path 41 Chamber 42 Passivation Layer 1101a~101b Metal source 1102a~102j Earth 1103a~103b ICP electrode 1104a~104b Cut Filter 1105a~105b DC power supply 1106a~106b RF power supply 1107a~107b Lamps 1108 Ar source 1109 Reactive Gas Source 1110 Power supply 1111 PCB holder 1112 board 1113 Cut Filter 1114 ICP Ring 1115 Vacuum chamber 1116 Rotation axis

Claims

1. An element comprising a substrate portion and a beam portion including an end portion, the end portion being fixed to the substrate portion, The substrate portion is a crystalline substrate that is a Si substrate; a first layer formed on the crystal substrate and made of a nitride containing Hf and / or Zr; a second layer stacked on the first layer and made of a first metal film of a first metal selected from In—Tl, In—Tl—Li, Na, Zr, Tl, Hf, Ti, Ti—Mo, Ti—V, Ti—Zr, Zr—U, Au—Cd, Li, U, and Hg; and The beam portion is a third layer made of a second metal film of the same type as the first metal film; a fourth layer stacked on the third layer and made of a second metal different from the first metal; a fifth layer made of a conductive metal oxide laminated on the fourth layer; a piezoelectric layer laminated on the fifth layer; and A cavity is formed under the beam portion, the third layer is integrally formed with the second layer; A device characterized in that the crystal substrate, the first layer, the second layer, and the third layer are oriented in substantially the same crystal axis direction.

2. 2. The element according to claim 1, wherein the crystal axis direction is the (100) direction.

3. 2. The device of claim 1, wherein the fourth layer comprises a metal belonging to Group 10 or 11 of the periodic table.

4. The element of claim 3 , wherein the conductive metal oxide comprises Sr and / or Ru.

5. 5. The element of claim 4, wherein the piezoelectric layer contains Pb and Ti.

6. An element comprising a substrate portion and a beam portion including an end portion, the end portion being fixed to the substrate portion, The substrate portion is a crystalline substrate that is a Si substrate; a first layer formed on the crystal substrate and made of a nitride containing Hf and / or Zr; a second layer laminated on the first layer and made of a first metal film of a first metal that undergoes martensitic transformation by heat treatment or processing; and The beam portion is a third layer made of a second metal film of the same type as the first metal film; a fourth layer stacked on the third layer and made of a second metal different from the first metal; a fifth layer made of a conductive metal oxide laminated on the fourth layer; a piezoelectric layer laminated on the fifth layer; and A cavity is formed under the beam portion, the third layer is integrally formed with the second layer; A device characterized in that the crystal substrate, the first layer, the second layer, and the third layer are oriented in substantially the same crystal axis direction.

7. 7. The device of claim 6, wherein the first metal comprises Fe, Cr, or Ni.

8. 7. The element according to claim 6, wherein the crystal axis direction is the (100) direction.

9. 7. The device of claim 6, wherein the fourth layer comprises a metal belonging to Group 10 or 11 of the periodic table.

10. 10. The device of claim 9, wherein the conductive metal oxide comprises Sr and / or Ru.

11. 11. The element of claim 10, wherein the piezoelectric layer comprises Pb and Ti.

12. An element comprising a substrate portion and a beam portion including an end portion, the end portion being fixed to the substrate portion, The substrate portion is a crystalline substrate that is a Si substrate; a first layer made of a metal compound film laminated on the crystal substrate; a second layer stacked on the first layer and made of a first metal film of a first metal selected from In—Tl, In—Tl—Li, Na, Zr, Tl, Hf, Ti, Ti—Mo, Ti—V, Ti—Zr, Zr—U, Au—Cd, Li, U, and Hg; and The beam portion is a third layer made of a second metal film of the same type as the first metal film; a fourth layer stacked on the third layer and made of a second metal different from the first metal; a fifth layer made of a conductive metal oxide laminated on the fourth layer; a piezoelectric layer laminated on the fifth layer; and A cavity is formed under the beam portion, the third layer is integrally formed with the second layer; A device characterized in that the crystal substrate, the first layer, the second layer, and the third layer are oriented in substantially the same crystal axis direction.

13. 13. The element according to claim 12, wherein the crystal axis direction is the (100) direction.

14. 13. The device of claim 12, wherein the fourth layer comprises a metal belonging to Group 10 or 11 of the periodic table.

15. 15. The device of claim 14, wherein the conductive metal oxide comprises Sr and / or Ru.

16. 16. The element of claim 15, wherein the piezoelectric layer comprises Pb and Ti.

17. 13. An electronic device including an element, wherein the element is the element according to claim 1, 6 or 12.

18. 18. An electronic device including an electronic device, wherein the electronic device is the electronic device according to claim 17.

19. 20. A system including an electronic device, wherein the electronic device is the electronic device of claim 18.

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