Movable edge ring for plasma processing system

Abstract

A movable edge ring system for a substrate processing system includes a top movable ring including a first annular body disposed around a substrate support. The top movable ring is exposed to plasma during substrate processing. A movable support ring is disposed radially outward of a base plate of the substrate support below the top movable ring and includes a second annular body. A shield ring is disposed radially outward of the movable support ring and includes a third annular body. A cover ring includes a fourth annular body disposed above a radially outer edge of the top movable ring. An actuator and lift pins are configured to adjust the positions of the top movable ring and the movable support ring relative to the shield ring and the cover ring.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Application No. 63 / 087,814, filed October 5, 2020. The entire disclosure of the above-referenced application is incorporated herein by reference.

[0002] The present disclosure relates generally to plasma processing systems, and more particularly to an edge ring system having a movable edge ring. [Background technology]

[0003] The background description provided herein is intended to generally present the context of the present disclosure. To the extent described in this background section, the work of the inventors cited herein, as well as other aspects of this description that may not be admitted as prior art at the time of filing, are not admitted, expressly or impliedly, as prior art to the present disclosure.

[0004] A substrate processing system performs processes on substrates, such as semiconductor wafers. Examples of substrate processing include deposition, ashing, etching, cleaning, and / or other processes. A process chamber may be supplied with a process gas mixture for processing the substrate. A plasma may be used to ignite the gases to promote chemical reactions.

[0005] The substrate being processed is positioned on a substrate support. The edge ring has an annular body positioned adjacent to and around the radially outer edge of the substrate. The edge ring can be used to form or focus a plasma on the substrate. During operation, the exposed surfaces of the substrate and edge ring are etched by the plasma. This results in wear on the edge ring, which changes the edge ring's effect on the plasma, which can adversely affect uniformity. Summary of the Invention

[0006] A movable edge ring system for a substrate processing system includes a top movable ring including a first annular body disposed around a substrate support. The top movable ring is exposed to plasma during substrate processing. The movable support ring is disposed radially outward of a base plate of the substrate support below the top movable ring and includes a second annular body. A shield ring is disposed radially outward of the movable support ring and includes a third annular body. The cover ring includes a fourth annular body disposed above a radially outer edge of the top movable ring. The actuator and lift pins are configured to adjust the positions of the top movable ring and the movable support ring relative to the shield ring and the cover ring.

[0007] In other features, the top movable ring includes a first annular recess on the radially outer upper surface of the first annular body. The shield ring includes a protrusion extending upward from the radially outer upper surface of the third annular body. The cover ring includes a second annular recess configured to receive the protrusion. The third annular recess is configured to align with the first annular recess of the top movable ring when the top movable ring and the movable support ring are raised.

[0008] In another feature, the top movable ring, movable support ring, and shield ring are electrically conductive, while the cover ring is non-conductive. As the top movable ring and movable support ring are moved from the lowest position to the intermediate position and then to the highest position, the movable support ring maintains at least about 70% of the vertical lateral portion of its radially outer surface within the predetermined coupling gap of the shield ring, and at least about 50% of the vertical lateral portion of its radially inner surface is positioned within the predetermined coupling gap of the base plate. In some embodiments, the predetermined coupling gap is greater than 0 and less than or equal to about 20 mils.

[0009] In another feature, when the top movable ring and the movable support ring are moved from the lowest position to the intermediate position and then to the top position, the movable support ring maintains about 90% or more of the vertical lateral portions of the radially outer surface of the movable support ring within the predetermined bonding gap of the shield ring, and about 60% or more of the vertical lateral portions of the radially inner surface of the movable support ring are positioned within the predetermined bonding gap of the base plate. In some embodiments, the predetermined bonding gap is greater than 0 and about 20 mils or less.

[0010] In another feature, the edge ring includes a fifth annular body having an "L" shaped cross section. The substrate support includes a heating layer disposed on the base plate. The edge ring is disposed between the heating layer of the substrate support and the radially inner surfaces of the top movable ring and the movable support ring.

[0011] In another feature, the top movable ring, the movable support ring, and the shield ring are conductive, and the cover ring and the edge ring are non-conductive. The edge ring includes a fifth annular body and is positioned radially outward of the shield ring and the cover ring. The top movable ring, the movable support ring, and the shield ring are conductive, and the cover ring and the edge ring are non-conductive.

[0012] In other features, the edge ring includes an annular recess on its radially inner upper surface for receiving the cover ring. The lower surface of the movable support ring includes a ring centering portion, which is centered when the lift pins bias against the ring centering portion. The lower surface of the top movable ring includes a ring centering portion, which is centered when the movable support ring biases against the ring centering portion of the top movable ring.

[0013] In another feature, at least one of the top movable ring, the movable support ring, and the shield ring includes a horizontal ring spacer, the horizontal ring spacer including at least one of a shim, a protrusion, and a pin.

[0014] The system includes a movable edge ring system and a substrate support configured to support the substrate, and a controller configured to control the actuators to move the lift pins to adjust the height of the movable support ring and the top movable ring relative to the substrate support.

[0015] In another feature, the controller is configured to adjust the height of the movable support ring and the top movable ring in response to at least one of the number of RF plasma cycles, the number of substrates being processed, and the duration of the RF exposure.

[0016] An edge ring system for a substrate processing system includes a top fixed ring including a first annular body that is directly exposed to plasma during substrate processing. A movable ring is disposed radially outward from a base plate of a substrate support below the top fixed ring and includes a second annular body. A shield ring is disposed radially outward from and below the movable ring and includes a third annular body. An actuator and lift pins are configured to adjust the position of the movable ring relative to the top fixed ring and the shield ring.

[0017] In another feature, the cover ring is non-conductive and is disposed above a radially outer edge of the top locking ring, the top locking ring including a first annular recess on a radially outer upper surface of the first annular body.

[0018] In other features, the shield ring includes a protrusion extending upward from a radially outer upper surface of the third annular body, and the cover ring includes a second annular recess configured to receive the protrusion and a third annular recess configured to mate with the first annular recess of the top fixation ring.

[0019] In another feature, the top fixed ring, the movable ring, and the shield ring are fabricated from a conductive material. As the movable ring is moved from the lowest position to the intermediate position and then to the highest position, the movable ring maintains at least about 70% of the vertical lateral portion of its radially outer surface within a predetermined coupling gap of the shield ring and at least about 50% of the vertical lateral portion of its radially inner surface within a predetermined coupling gap of the base plate. The predetermined coupling gap is no more than about 30 mils.

[0020] In other features, the movable ring has a "T" shaped cross section and the shield ring has an inverted "T" shaped cross section. The cover ring includes a fourth annular body. The substrate support includes a heating layer disposed on the base plate, and the cover ring is disposed between the heating layer of the substrate support and a radially inner surface of the top fixed ring when the top fixed ring is in the lowered position.

[0021] As another feature, the top fixed ring, the movable ring, and the shield ring are conductive, and the cover ring is non-conductive.

[0022] In another feature, the edge ring includes an annular body and is positioned radially outward of the shield ring.

[0023] As another feature, the edge ring includes an annular recess on its radially inner upper surface for receiving the cover ring. The top fixed ring, the movable ring, and the shield ring are electrically conductive, and the cover ring and the edge ring are non-conductive.

[0024] In other features, the top fixed ring includes a radially inner portion, an upwardly sloping portion extending from the radially inner portion, and a flat portion extending from the upwardly sloping portion. The movable ring includes a radially inwardly protruding portion and a radially outwardly protruding portion. The radially inner upper surface of the radially inwardly protruding portion includes a sloped portion.

[0025] In another feature, an upper surface of the inclined portion extends parallel to a lower surface of the upwardly inclined portion. The lower surface of the movable ring includes a ring centering portion, and the movable ring is centered when the lift pin biases the ring centering portion of the movable ring. At least one of the top fixed ring, the movable ring, and the shield ring includes a horizontal ring spacer.

[0026] In other features, the horizontal ring spacer includes at least one of a shim, a protrusion, and a pin.

[0027] The system includes an edge ring system, a substrate support configured to support a substrate, and a controller configured to adjust the height of the actuator to move the lift pins to adjust the height of the movable ring relative to the top fixed ring.

[0028] In another feature, the controller is configured to adjust the height of the movable ring in response to at least one of the number of RF plasma cycles, the number of substrates being processed, and the duration of the RF exposure.

[0029] The substrate processing system includes a substrate support including a cylindrical body, an annular protruding portion extending from a lower portion of the cylindrical body, and a shield portion extending upward from a radially outer edge of the annular protruding portion, wherein a cavity is defined between the cylindrical body and the shield portion. The top movable ring includes a first annular body disposed around the substrate support. The top movable ring is exposed to plasma during substrate processing. The movable support ring includes a second annular body. The movable support ring is disposed below the top movable ring within the cavity between the shield portion and the cylindrical body.

[0030] In another feature, the cover ring is positioned above a radially outer edge of the top fixed ring. The actuator and lift pins are configured to adjust the position of the top movable ring and the movable support ring relative to the shield and the cover ring. The top movable ring includes a first annular recess on a radially outer upper surface of the first annular body.

[0031] In another feature, the top movable ring, the cylindrical body, the movable support ring, and the shield portion are conductive, and the cover ring is non-conductive. As the top movable ring and the movable support ring are moved from the lowest position to the intermediate position and then to the highest position, the movable support ring maintains at least about 70% of the vertical lateral portion of the radially inner surface of the movable support ring within the predetermined coupling gap of the cylindrical body, and at least about 50% of the vertical lateral portion of the radially outer surface of the movable support ring is positioned within the predetermined coupling gap of the shield portion. The predetermined coupling gap is greater than 0 and not greater than about 20 mils.

[0032] In another feature, the lower surface of the movable support ring includes a ring centering portion for centering the movable support ring relative to the cylinder when the lift pins bias the ring centering portion of the movable support ring. At least one of the top movable ring, the movable support ring, and the shield ring includes a horizontal ring spacer. In some embodiments, the horizontal ring spacer includes at least one of a shim, a protrusion, and a pin.

[0033] In other features, the system includes an actuator, lift pins, and a controller configured to cause the actuator to move the lift pins to adjust the height of the movable support ring and the top movable ring relative to the substrate support.

[0034] In another feature, the controller is configured to adjust the height of the movable support ring and the top movable ring in response to at least one of the number of RF plasma cycles, the number of substrates being processed, and the duration of the RF exposure.

[0035] A movable edge ring system for a substrate processing system includes a top movable ring including a first annular body disposed around a substrate support. An upper surface of the top movable ring is exposed to plasma during substrate processing. A movable support ring is disposed radially outward of a base plate of the substrate support below the top movable ring and includes a second annular body. A shield ring is disposed radially outward of the movable support ring and includes a third annular body. An actuator and lift pins are configured to adjust the positions of the top movable ring and the movable support ring relative to the shield ring. The top movable ring, the movable support ring, and the shield ring are fabricated from a conductive material. As the top movable ring and the movable support ring are moved from a lowest position to an intermediate position and then to an uppermost position, the movable support ring maintains at least about 70% of a vertical lateral portion of the movable support ring's radially outer surface within a predetermined coupling gap of the shield ring and at least about 50% of a vertical lateral portion of the movable support ring's radially inner surface within a predetermined coupling gap of the base plate. The predetermined bond gap is greater than 0 and less than or equal to about 20 mils.

[0036] In another feature, the predetermined bond gap is greater than 0 and less than or equal to about 10 mils.

[0037] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure.

[0038] The present disclosure will become more fully understood from the detailed description and accompanying drawings set forth below. [Brief explanation of the drawings]

[0039] [Figure 1] FIG. 1 is a functional block diagram of an example plasma processing system for substrates according to the present disclosure.

[0040] [Figure 2A]FIG. 10 is a side cross-sectional view of an example of a top movable ring in a lowered position in accordance with certain embodiments of the present disclosure. [Figure 2B] FIG. 10 is a side cross-sectional view of an example of a top movable ring in a raised position, in accordance with certain embodiments of the present disclosure.

[0041] [Figure 3A] FIG. 10 is a side cross-sectional view of another example of a top movable ring in a lowered position in accordance with certain embodiments of the present disclosure. [Figure 3B] FIG. 10 is a side cross-sectional view of another example of a top movable ring in a raised position, in accordance with certain embodiments of the present disclosure.

[0042] [Figure 4A] FIG. 10 is a side cross-sectional view of another example of a movable ring positioned below a top fixed ring and in a lowered position, in accordance with certain embodiments of the present disclosure. [Figure 4B] FIG. 10 is a side cross-sectional view of another example of a movable ring positioned below a top fixed ring and in a raised position, in accordance with certain embodiments of the present disclosure.

[0043] [Figure 5A] FIG. 10 is a side cross-sectional view of another example of a top movable ring in a lowered position in accordance with certain embodiments of the present disclosure. [Figure 5B] FIG. 10 is a side cross-sectional view of another example of a top movable ring in a raised position, in accordance with certain embodiments of the present disclosure.

[0044] [Figure 6A] FIG. 10 is a side cross-sectional view of another example of a top movable ring in a lowered position in accordance with certain embodiments of the present disclosure. [Figure 6B] FIG. 10 is a side cross-sectional view of another example of a top movable ring in a raised position, in accordance with certain embodiments of the present disclosure.

[0045] [Figure 7] FIG. 1 illustrates a cross-sectional side view of an edge ring system including a ring with a ring spacer including multiple shims, in accordance with certain embodiments of the present disclosure.

[0046] [Figure 8] FIG. 10 is a side cross-sectional view of a ring having a ring spacer including multiple pins, in accordance with certain embodiments of the present disclosure.

[0047] [Figure 9A] 1 is a side cross-sectional view of a ring having a ring spacer including multiple protrusions, according to certain embodiments of the present disclosure. FIG.

[0048] [Figure 9B] FIG. 10 is an enlarged side cross-sectional view of a ring having a ring spacer including a protrusion with a raised flat portion, according to certain embodiments of the present disclosure.

[0049] [Figure 10A] 10A-10C are side cross-sectional views of example ring centering features, in accordance with certain embodiments of the present disclosure. [Figure 10B] 10A-10C are side cross-sectional views of example ring centering features, in accordance with certain embodiments of the present disclosure.

[0050] [Figure 11] 10 is a flowchart of an example method for adjusting the height of an edge ring, in accordance with certain embodiments of the present disclosure.

[0051] [Figure 12] 1 is a flowchart of an example method for heating one or more edge rings to reposition or center the edge rings, according to certain embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0052] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

[0053] During substrate processing, the substrate is placed on a pedestal, such as an electrostatic chuck (ESC), process gases are supplied, and a plasma is struck within the processing chamber. Exposure to the plasma causes wear on exposed surfaces of components within the processing chamber.

[0054] For example, an edge ring for generating a plasma is positioned at the radially outer edge of a substrate. After processing of the substrate, the exposed surface of the edge ring may wear away, changing its height relative to the substrate. This changes the effect of the edge ring on the plasma, which in turn changes the effect of the process on the substrate. As a result, in some substrate processing systems, it becomes necessary to open the processing chamber to replace the worn edge ring.

[0055] To reduce process variations due to edge ring wear without breaking vacuum, some processing chambers are equipped with adjustable edge rings. In such processing chambers, the height of the adjustable edge ring can be increased to compensate for wear or to allow fine tuning of various processing conditions in a recipe. This approach extends the interval between edge ring replacements, thereby reducing replacement costs and overall downtime.

[0056] As the height of the edge ring changes, the capacitive coupling between the plasma, the sheath, and / or the capacitance delivery structure (including the edge ring) also changes. Such changes in capacitive coupling can cause non-uniformity in substrate processing over time. Variations in capacitive coupling can also occur in response to other factors, such as thermal expansion of the edge ring, erosion of the gap between adjacent rings, and part-to-part variations.

[0057] In some cases, coatings, spacers, and / or minimum gaps are used to minimize capacitance variations. However, these mechanisms may reduce the overall coupling capacitance, which reduces the RF voltage on the edge ring. As a result, a higher geometric height may be required to achieve the desired vertical tilt.

[0058] Various edge ring configurations according to the present disclosure include a top movable ring that reduces capacitive coupling variations due to wear of the top movable ring. Figures 2A and 2B, 3A and 3B, 5A and 5B, and 6A and 6B show a top movable ring that is adjustable. As described further below, the geometric height of the top movable ring can be changed by varying the height of the top movable ring using a movable support ring and lift pins.

[0059] 4A and 4B illustrate another type of adjustable edge ring, according to certain embodiments of the present disclosure. As described further below, the top ring in FIGS. 4A and 4B is fixed, and a movable ring and lift pins located below the top ring are adjusted to adjust the RF voltage on the top ring and control the plasma sheath.

[0060] Referring now to FIG. 1 , an example of a substrate processing system 110 for performing plasma processing including a movable edge ring system according to certain embodiments of the present disclosure is shown. While a particular type of plasma processing chamber is shown, other plasma processing chambers can be used. The substrate processing system 110 can be used to perform etching using a capacitively coupled plasma (CCP). The substrate processing system 110 includes a processing chamber 122 that contains the other components of the substrate processing system 110 and contains an RF plasma (if used). The substrate processing system 110 includes an upper electrode 124 and a substrate support 126, such as an electrostatic chuck (ESC). During operation, a substrate 128 is positioned on the substrate support 126.

[0061] By way of example only, the upper electrode 124 may include a gas distribution device 129, such as a showerhead, for introducing and distributing process gases. The gas distribution device 129 may include a shaft with one end connected to the top surface of the processing chamber. The annulus is generally cylindrical and extends radially outward from the opposite end of the shaft at a location spaced from the top surface of the processing chamber. The substrate-facing surface or faceplate of the showerhead annulus includes a plurality of holes through which precursors, reactants, etching gases, inert gases, carrier gases, other process gases, or purge gases flow. Alternatively, the upper electrode 124 may include a conductive plate, and the process gases may be introduced in another manner.

[0062] The substrate support 126 includes a base plate 130 that functions as a lower electrode. The base plate 130 supports a heating plate 132, which may correspond to a ceramic multi-zone heating plate. A bonding layer and / or a thermal resistance layer 134 may be disposed between the heating plate 132 and the base plate 130. The base plate 130 may include one or more channels 136 for flowing a coolant through the base plate 130.

[0063] The RF generation system 140 generates and outputs an RF voltage to one of the upper electrode 124 and the lower electrode (e.g., the base plate 130 of the substrate support 126). The other of the upper electrode 124 and the base plate 130 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 140 may include an RF generator 142 that generates RF plasma power that is supplied to the upper electrode 124 or the base plate 130 by a matched distribution network 144. In other examples, the plasma may be generated inductively or remotely.

[0064] Gas delivery system 150 includes one or more gas sources 152-1, 152-2, ..., 152-N (collectively gas sources 152), where N is an integer greater than 0. Gas sources 152 are connected to manifold 160 by valves 154-1, 154-2, ..., 154-N (collectively valves 154) and MFCs 156-1, 156-2, ..., 156-N (collectively MFCs 156). Secondary valves may be used between MFCs 156 and manifold 160. Although a single gas delivery system 150 is shown, more than one gas delivery system may be used.

[0065] A temperature controller 163 may be connected to a plurality of thermal control elements (TCEs) 164 disposed on the heating plate 132. The temperature controller 163 may be used to control the plurality of TCEs 164 to control the temperature of the substrate support 126 and the substrate 128. The temperature controller 163 may be in communication with a coolant assembly 166 to control the flow of coolant through the channels 136. For example, the coolant assembly 166 may include a coolant pump, a reservoir, and / or one or more temperature sensors. The temperature controller 163 operates the coolant assembly 166 to selectively flow coolant through the channels 136 to cool the substrate support 126.

[0066] Valves 170 and pumps 172 may be used to evacuate reactants from the processing chamber 122. A system controller 180 may include one or more controllers used to control components of the substrate processing system 110. In some examples, a movable edge ring 182 is positioned radially outward of the substrate 128 and is exposed to the plasma during plasma processing. In other examples, the movable edge ring is positioned below a fixed edge ring that is exposed to the plasma. An edge ring height adjustment system 184 may be used to adjust the height of the top surface of the movable edge ring 182 relative to the substrate 128 (or to change the RF voltage of the fixed edge ring), as described further below. In some examples, the movable edge ring 182 can also be raised, removed by a robotic end effector, and replaced with another edge ring without releasing the vacuum.

[0067] In certain embodiments, the system controller 180 controls a robot 190 to deliver the substrate and / or edge ring to a processing chamber, as described further below. The system controller 180 also controls one or more actuators 192 that move the lift pins to adjust the height or tilt of the edge ring, as described further below. The system controller 180 can also receive output from one or more sensors 196 used to sense the height of the edge ring. Non-limiting examples of sensors include optical sensors, physical sensors, piezoelectric sensors, ultrasonic sensors, etc.

[0068] 2A and 2B, an edge ring system 200 according to certain embodiments of the present disclosure is shown with a movable edge ring in a lowered position (FIG. 2A) and a raised position (FIG. 2B). The edge ring system 200 is configured to adjust the geometric height of an upper surface of a top movable ring 240 relative to an upper surface of a substrate 222. The substrate support includes a base plate 210 including a cylindrical body 212 and an annular protruding portion 214 extending radially outward from a lower portion of the cylindrical body 212. The annular protruding portion 214 of the base plate 210 includes a vertically extending cavity 215 within which the lift pins 292 can reciprocate.

[0069] A heating layer 216 is disposed above the base plate 210. The heating layer 216 includes a cylindrical body 218 and an annular protruding portion 220 extending radially outward from a lower portion of the cylindrical body 218. A bonding layer (not shown) may be disposed between the heating layer 216 and the base plate 210.

[0070] 2A, edge ring system 200 includes fixed ring 230, shield ring 260, cover ring 270, ring 280, and ring 290, top movable ring 240, and movable support ring 250. In this context, the term fixed means that the edge ring generally does not move after installation without releasing the vacuum, and the term movable means that the position of the ring can be adjusted after installation without releasing the vacuum by an actuator, as described further below.

[0071] Ring 230 is positioned below the radially outer edge of substrate 222, above annular protruding portion 220 of heating layer 216, and between heating layer 216 and the radially inner edges of top movable ring 240 and movable support ring 250. Ring 230, according to certain embodiments, has an "L" shaped cross section and includes an annular body 232, a vertical portion 234, and a horizontal portion 236.

[0072] Top movable ring 240 includes an upper surface that is directly exposed to the plasma. In some embodiments, top movable ring 240 is positioned radially outward from substrate 222, partially below top cover ring 270, above and adjacent rings 230 and 260, and in contact with and directly above movable support ring 250. According to some embodiments, top movable ring 240 includes an annular body 242 having a generally rectangular cross-section and an annular recess 244 positioned at a radially outer top of annular body 242.

[0073] Movable support ring 250 includes an annular body 252 positioned below top movable ring 240, between the radially inner surface of shield ring 260 and the radially outer surface of base plate 210. In some embodiments, movable support ring 250 has a "T" shaped cross-section, although other cross-sections may be used. The top of movable support ring 250 includes a radially inwardly protruding portion 254 and a radially outwardly protruding portion 256. The upper surfaces of radially inwardly protruding portion 254 and radially outwardly protruding portion 256 are positioned directly adjacent to and in contact with the lower surface of top movable ring 240.

[0074] In some embodiments, the movable support ring 250 further includes a protruding portion 258 positioned along a radially inner lower portion of the annular body 252 for improving coupling with the base plate 210. In certain embodiments, the protruding portion 258 extends vertically within the coupling gap to a location where the protruding portion 258 extends adjacent the radially outer surface of the base plate of the movable support ring 250 for all vertical positions of the movable support ring 250 to maintain uniform capacitive coupling.

[0075] Plasma exposure may result in erosion of the upper surface of top movable ring 240. In some embodiments, to compensate for the erosion of the upper surface, top movable ring 240 and movable support ring 250 are raised such that the upper surface of top movable ring 240 maintains a substantially fixed position relative to substrate 222.

[0076] Shield ring 260 is positioned between movable support ring 250 and ring 280 and above annular protruding portion 214 of base plate 210. In some examples, shield ring 260 is made of a conductive material and is positioned radially outward of movable support ring 250. This positioning of shield ring 260 helps to control the voltage on movable support ring 250 and to prevent coupling with ring 290 (to help maintain high voltages). In some examples, shield ring 260 may be integral with base plate 212, as described further below.

[0077] According to some embodiments, shield ring 260 has an inverted "T" shaped cross section and includes an annular body 262, a radially inwardly protruding portion 264, and a radially outwardly protruding portion 266. The lower surfaces of radially inwardly protruding portion 264 and radially outwardly protruding portion 266 are disposed directly adjacent to the top of annular protruding portion 214 of base plate 210. Shield ring 260 further includes an upwardly protruding portion 267 extending perpendicularly from the radially outer edge of the upper surface of annular body 262. Cavity 268 is aligned with cavity 215 such that actuator 192 can reciprocate lift pins 292 therein.

[0078] As shown in FIGS. 2A-2B , top cover ring 270 is positioned above top movable ring 240, shield ring 260, and ring 280 and has an upper surface directly exposed to the plasma. In some examples, top cover ring 270 includes an annular body 272, a first stepped portion 274, and a second stepped portion 276. First stepped portion 274 is positioned above upwardly protruding portion 267 of shield ring 260. Second stepped portion 276 is received by annular recess 244 of top movable ring 240. Second stepped portion 276 covers the radially outer edges of top movable ring 240 and movable support ring 250. In other examples, top cover ring 270 may include additional steps, fewer steps, or no steps. In some examples, top cover ring 270 has a rectangular cross-section.

[0079] Ring 280 is positioned radially outward of shield ring 260, annular protruding portion 214 of base plate 210, and support plate 285. Ring 280 includes an annular body 282 and a protruding portion 284 extending radially inward from a portion of the radially inner surface of annular body 282. Annular body 282 includes an annular recess 288 disposed on the radially inner upper edge of annular body 282. Annular body 282 includes a protruding portion 286 extending radially outward from the upper edge of annular body 282. Ring 290 is positioned radially outward of ring 280, below protruding portion 286. In some embodiments, top cover ring 270 may be made of quartz, and ring 280 may be made of quartz or ceramic.

[0080] 2A and 2B, actuator 192 biases lift pins 292 to adjust their height. Lift pins 292 bias movable support ring 250 to raise top movable ring 240 relative to the upper surface of substrate 222. Adjusting the geometric height of top movable ring 240 compensates for wear due to exposure to plasma. In some examples, top movable ring 240, movable support ring 250, shield ring 260, and ring 290 are fabricated from conductive materials. Ring 230, cover ring 270, and ring 280 are fabricated from non-conductive materials.

[0081] 2A and 2B maintain a relatively uniform capacitive coupling with base plate 210 and / or edge ring 260 as top movable ring 240 and movable support ring 250 are moved from their lowest positions to various elevated positions. In some examples, 70% or more, 80% or more, or 90% or more of the vertically oriented lateral portions of the radially outer surface of movable support ring 250 are positioned within the predetermined coupling gap of shield ring 260 at various elevational positions of top movable ring 240 and movable support ring 250. In the example of FIGS. 2A and 2B, 100% of the vertically oriented lateral portions of the radially outer surface of movable support ring 250 are positioned within the predetermined coupling gap of shield ring 260 at various elevational positions of top movable ring 240 and movable support ring 250.

[0082] In some examples, the predetermined coupling gap is greater than 0 and less than or equal to 30 mils, less than or equal to 20 mils, or less than or equal to 10 mils. The predetermined coupling gap is large enough to allow relative movement of the movable ring with sufficient margin for expansion of the ring and / or adjacent surfaces due to heating during plasma processing. The predetermined coupling gap should also be small enough to provide sufficient capacitive coupling with an adjacent ring or base plate to maintain the RF voltage on the top edge ring when the ring position rises due to wear on the top edge ring.

[0083] In some examples, 50% or more, 60% or more, or 70% or more of the vertically oriented portion of the radially inner surface of movable support ring 250 is positioned within the predetermined coupling gap of base plate 210 at various height positions of top movable ring 240 and movable support ring 250. In some examples, the capacitive coupling of the vertical lateral portions of base plate 210, movable support ring 250, and shield ring 260 remains constant for all vertical positions of movable support ring 250.

[0084] 3A and 3B, the ring 230, the movable support ring 250, and the cover ring 270 may have other cross-sectional shapes. In FIG. 3A, the movable support ring 250′ includes an annular body 252. In some examples, the movable support ring 250′ has an “L”-shaped cross-section. The horizontal portion 236 of the ring 230′ extends to the radially inner surface of the movable support ring 250′. The top cover ring 270′ includes a stepped portion 275 that extends radially inward from the annular body 272 and defines an annular recess that receives the protruding portion 267 of the shield ring 260 and the radially outer surface of the top movable ring 240. In FIG. 3B, lift pins 292 bias the movable support ring 250 to adjust the height of the top movable ring 240.

[0085] 4A and 4B, an edge ring system 400 according to some embodiments of the present disclosure is shown. The RF voltage of the top fixed ring 440, which is directly exposed to the plasma, can be varied by adjusting the height of a movable ring 450 positioned below the top fixed ring 440.

[0086] 4A , edge ring system 400 according to some embodiments further includes ring 430, shield ring 260, cover ring 470, ring 280, and ring 290. Ring 430 has an annular body and is positioned below the radially outer edge of substrate 222, directly below the radially inner edge of top fixed ring 440, directly above annular protruding portion 220 of heating layer 216, and between heating layer 216 and the radially inner edge of movable ring 450. In some examples, ring 430 has a rectangular cross section.

[0087] The top fixed ring 440 includes an upper surface that is directly exposed to the plasma. The top fixed ring 440 is partially disposed below the radially outer edge of the substrate 222, extends radially outward beyond the radially outer edge of the substrate, and rises above the substrate 222. The top fixed ring 440 is partially positioned below the cover ring 470 and above the movable ring 450 and the shield ring 260. The top fixed ring 440 includes an annular body 442 having a radially inner portion 444, an upwardly angled portion 445, a flat portion 447, and an annular recess 448 positioned on its radially outer upper surface. The upper surface of the top fixed ring 440 is directly exposed to the plasma. The slope of the angled portion 445 allows for even / uniform erosion across the surface and helps maintain a consistent thickness across the ring (compared to a right-angle design).

[0088] The movable ring 450 is positioned below the top fixed ring 440, between the radially inner surface of the shield ring 260 and the radially outer surface of the base plate 210. The movable ring 450 has an annular body 452. In some examples, the movable ring 450 has a "T" shaped cross section, a radially inwardly protruding portion 454, and a radially outwardly protruding portion 456. In some examples, the radially inner upper surface 455 of the radially inwardly protruding portion 454 may be sloped in a manner generally parallel to the sloped portion 445 of the top fixed ring 440.

[0089] The cover ring 470 is positioned above the top fixed ring 440, the shield ring 260, and the ring 280 and has an upper surface that is directly exposed to the plasma. The cover ring 470 includes an annular body 472, a first stepped portion 474, and a second stepped portion 476. The first stepped portion 474 is disposed above the upwardly protruding portion 467 of the shield ring 260. The second stepped portion 476 is received by the annular recessed portion 448 of the top fixed ring 440.

[0090] 4A and 4B, actuator 192 biases lift pins 292 to adjust the height of lift pins 292 and movable ring 450, thereby varying the capacitive coupling that varies the RF voltage on top fixed ring 440. Varying the RF voltage compensates for wear on top fixed ring 440 due to plasma exposure without changing the geometric height of top fixed ring 440, thereby reducing variability. In some examples, top fixed ring 440, shield ring 260, ring 290, and movable ring 450 are made of conductive materials. Ring 430, cover ring 470, and ring 280 are made of non-conductive materials.

[0091] 5A and 5B, another example of an edge ring system 500 is shown including a top movable ring 540, a movable support ring 550, and a shield ring 560. The top movable ring 540 is directly exposed to plasma during processing. The top movable ring 540 rests on the movable support ring 550. An actuator 192 biases the lift pins 292 against the lower surface of the movable support ring 550 to adjust the position of the top movable ring 540 relative to the substrate 422.

[0092] The top movable ring 540 includes an annular body 541. In some examples, the top movable ring 540 includes a ring centering portion 542 for centering the top movable ring 540 on the movable support ring 550. In some examples, the ring centering portion 542 may include a cavity formed on its lower surface. In some examples, the cavity has a width sufficient to receive the upper portion of the movable support ring 550. As can be appreciated, the edge ring systems described herein may include the ring centering portion 542. Downwardly directed protrusions 544, 546 of the top movable ring 540 are located at radially inner and outer locations of the annular body 541 on either side of the cavity. An annular recess 548 may be located at the radially outer upper portion of the annular body 541.

[0093] In some examples, the bottom of the top movable ring 540 includes a ring centering portion 551 for centering the movable support ring 550 relative to the base plate 210. As can be appreciated, all edge ring systems described herein can include the ring centering portion 551. In some examples, the ring centering portion 551 includes a cavity 553 having an inner surface that includes a linearly sloped or non-linearly sloped (e.g., curved) portion for biasing the movable support ring 550 when it is seated on the lift pins 292. In some examples, the cavity surfaces include opposing surfaces that provide a centering effect. In some examples, the cavity surfaces have a "V" shape, a conical shape, a combination of linear and curved shapes, or other types of surfaces that provide a centering effect.

[0094] Shield ring 560 includes an annular body 562 that partially surrounds movable support ring 550. The lower portion of annular body 562 includes a leg 564 that projects radially outward and a leg 566 that projects radially inward.

[0095] A ring 580 is positioned radially outward of the top movable ring 540, the movable support ring 550, and the shield ring 560. The ring 580 includes an annular body 582 and a first protrusion 584 extending radially inward from a central portion of the radially inner surface of the ring 580. The protrusion 585 extends radially inward from an upper portion of the radially inner surface of the ring 580. The protrusion 585 is positioned below the downwardly protruding legs 546. An annular recess 587 is positioned on the radially inner surface above the protrusion 585. The protrusion 586 protrudes radially outward from the upper surface of the ring. An annular recess 588 is positioned on the upper surface of the ring 580. In some examples, the cover ring 470 rests on the annular recess 588. A ring 590 is positioned radially outward of the ring 580 and may be made of a conductive material.

[0096] 5B, the top movable ring 540 and the movable support ring 550 are shown in a raised position. The actuator 192 urges the lift pins 292 against ring centering portions 551 on the lower surface of the movable support ring 550 to lift and center the movable support ring 550, which in turn lifts the top movable ring 540.

[0097] 6A and 6B, another example of an edge ring system 600 is shown, which includes a shield ring integrated with the base plate 210. A top movable ring 640 includes an upper surface that is directly exposed to the plasma. The top movable ring 640 includes an annular body 642. The radially outer upper surface of the top movable ring 640 includes an annular recess 644. In some examples, the annular body 642 has a rectangular cross-section.

[0098] Positioned below the top movable ring 640 is a movable support ring 650. The movable support ring 650 includes an annular body 652, a radially outer surface 654, and a radially inner surface 656. In some examples, the movable support ring 650 has an "L" shaped cross section and includes a protruding portion 655 extending radially inward from a top of the radially inner surface 656.

[0099] Cover ring 670 is fixed and includes an annular body 672 and a protrusion 676 extending radially inward from an upper surface of annular body 672. When top movable ring 640 is raised (as shown in FIG. 6B ), protrusion 676 of cover ring 670 extends into annular recess 644. According to some embodiments, base plate 210, top movable ring 640, movable support ring 650, and ring 690 are conductive, and cover ring 670 and ring 680 are non-conductive.

[0100] In the previous embodiment, some of the edge rings are made of a conductive material, or a conductive or non-conductive material with a conductive coating. 4Refers to materials or coatings with a resistivity of Ωcm or less. For example, doped silicon has a resistivity of 0.05 Ωcm, silicon carbide has a resistivity of 1-300 Ωcm, and metals such as aluminum and copper have a resistivity of about 10 -7 In some examples, the edge rings of the present disclosure are fabricated from a non-conductive material, or a conductive or non-conductive material with a non-conductive coating. As used herein, non-conductive means a material having a resistivity of 10 4 Refers to materials / coatings with resistivity greater than Ωcm.

[0101] The conductive ring may be fabricated from one or more substrates, one or more plating layers, and / or one or more coatings. Non-limiting examples of substrates include silicon, silicon carbide, titanium, graphite, quartz, and / or ceramic. Non-limiting examples of plating layers include aluminum plating. Non-limiting examples of coatings include perfluoroalkoxy (PFA), atomic layer deposition (ALD) aluminum oxide (Al2O3), ALD yttrium oxide or yttria (YO3), and / or anodized coating. For example, the conductive material may include anodized titanium oxide, silicon with a PFA coating, doped silicon, silicon with an aluminum plating and an anodized coating, silicon with ALD aluminum oxide, silicon with an ALD yttria coating, silicon carbide, graphite with a PFA coating, graphite with an aluminum plating and an anodized coating, graphite with an ALD aluminum oxide coating, graphite with an ALD yttria coating, or other suitable materials. Non-limiting examples of non-conductive materials include quartz and ceramic. In the above embodiments, one or more of the rings may be formed by one or more structures along a radial, axial, or other direction.

[0102] 7-9B, various methods are shown for constraining movement, controlling spacing, and / or horizontally centering a ring relative to another structure, such as a ring or base plate of an edge ring system described herein. In FIG. 7, a structure 710, such as a ring, base plate, or other structure in a processing chamber, is positioned adjacent to a surface of a ring 720. FIGS. 7-9B illustrate various methods for constraining movement of structure 710 relative to ring 720.

[0103] In FIG. 7 , ring 720 includes slots 738 positioned in its radially outer surface. Slots 738 extend radially inward into the radially outer surface of ring 720. Shims 734 are disposed within slots 738. In some examples, adhesive 730 is used to hold shims 734 within slots 738. In some examples, shims 734 have rectangular top, radial, and side cross sections, although other shapes can be used. In some examples, shims 734 have a radial thickness that is equal to or greater than the depth of slots 738. In some examples, shims 734 extend radially outward from ring 720 a sufficient distance to limit movement (considering the number of shims used).

[0104] In FIG. 8 , ring 720 includes slots 748 positioned in its radially outer surface. Slots 748 extend radially inward. Pins 750 are disposed within slots 748. In some examples, adhesive 730 is used to hold pins 750 within slots 748. In some examples, pins 750 have a cylindrical shape, although other shapes can be used. In some examples, pins 750 have a radial height equal to or greater than the depth of slots 748. In some examples, pins 750 extend radially from ring 720 a sufficient distance to limit movement (considering the number of pins used). In some examples, pins 750 extend radially outward from ring 720 a sufficient distance to limit movement (considering the number of shims used).

[0105] 9A and 9B, the ring 720 includes protrusions 760 formed on its radially outer surface. In some examples, some or all of the protrusions 760 extend vertically along the vertical thickness of the radially outer surface. In FIG. 9B, the protrusions 760 include flat surfaces 766 extending from the radially outer surface 762 of the ring 720, which are easier to machine and inspect compared to arcuate profiles. In some examples, the edge ring is initially formed slightly wider without the protrusions 760, and then the radially outer surface is machined or removed in the areas between adjacent protrusions to form the protrusions 760. In other examples, the protrusions 760 include arcuate or convex profiles in plan view, which reduce the surface area in contact with the opposing radially inner surface of the top edge ring and reduce friction when adjusting the height or replacing the top edge ring without breaking the vacuum.

[0106] In some examples, the protrusions 760 are coated with a coating material 764. In some examples, the coating material 764 is relatively conformal and made of an insulating material. In some examples, the coating is selected from the group consisting of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer (PFA), or aluminum oxide, yttrium oxide, or yttrium fluoride deposited using atomic layer deposition. The coating material 764 provides an insulating function to prevent shorting and reduces erosion. The coating material 764 also ensures a minimal gap between the ring 720 and the structure 710 to prevent shorting. In some examples, the protrusions 760 extend radially outward from the radially outer surface of the ring 720 a sufficient distance to limit movement (considering the number of protrusions used).

[0107] In some examples, ring 720 includes three to eight spacers (shims or protrusions) evenly spaced around the circumference of ring 720 (e.g., three at 120° intervals, five at 72° intervals, eight at 45° intervals (i.e., 360° / N)). As can be appreciated, the spacers are generally not configured to completely restrict relative movement between the upper and lower rings. This gap helps reduce binding during height adjustment and / or replacement. Thus, some relative movement is still desirable, and with three shims, unwanted movement (which can change the effective coupling capacitance) may occur. In some examples, ring 720 includes five spacers positioned around the circumference of ring 720 to further restrict movement. With this particular configuration, adding six, seven, eight, etc. spacers reduces the benefit in terms of effective capacitance control and increases cost.

[0108] Although spacers (e.g., shims, protrusions, or projections) are shown disposed on the outer surface of ring 720, spacers may be disposed on one or both of the inner surface of ring 720 and / or the inner surface of structure 710. Additionally, spacers and / or insulating coatings may be disposed on one or both of the radially facing surfaces of the edge ring and adjacent structures in any of the previous examples (e.g., of FIGS. 1-6B).

[0109] In some examples, the spacers extend radially outward from the radially outer surface of the edge ring within a range of 50 μm to 250 μm. In some examples, the spacers extend radially outward from the radially outer surface of the edge ring within a range of 50 μm to 250 μm.

[0110] 10A and 10B, additional examples of horizontal ring spacing features are shown. In FIG. 10A, a ring portion 1110 includes a ring spacing feature 1112 positioned on its lower surface. The ring spacing feature 1112 includes opposing sidewalls that are mirror images of each other about a centerline. Portions of the sidewalls slope inward from opposite directions at an acute angle relative to a plane transverse to the direction in which the lift pins 1116 reciprocate. In some examples, the ring spacing feature 1112 includes portions having a "V" shape in one plane as shown, two orthogonal planes, or multiple planes rotated about a central dotted line. In other examples, the ring spacing feature 1112 includes portions having a conical shape.

[0111] Although planar sidewalls are shown, the sidewalls may be planar, partially planar and partially curved, and / or entirely curved with various profiles. As shown in Figure 1 IB, ring portion 1110 includes ring spacing feature 1120 positioned on its lower surface. Ring spacing feature 1120 includes opposing sidewalls that are curved and mirrored about a centerline.

[0112] Referring now to FIG. 11 , a method 1100 for adjusting the height of the top movable ring is shown. In some embodiments, the top movable ring can be delivered to and removed from a processing chamber through a port in the processing chamber without breaking vacuum. In other words, the top movable edge ring has a diameter smaller than the width of the port. After delivery, the height of the top movable edge ring can be increased over time to compensate for wear caused by exposure to plasma without breaking vacuum. As a result, the processing chamber can be operated for longer periods without opening the processing chamber, thereby increasing throughput and reducing costs.

[0113] Method 1100 includes determining at 1102 whether the top movable edge ring is in a processing chamber. If 1102 is false, the method delivers the top movable ring to the processing chamber at 1104. For example, system controller 180 causes robot 190 to deliver the top movable ring to the processing chamber. If 1102 is true, the method determines whether the position of the top movable ring needs to be adjusted. For example, one or more sensors can be used to detect the position, height, or tilt of the top movable ring. One or more of actuators 192 can be used to adjust the position, height, or tilt of the top movable ring relative to the upper surface of the substrate. If 1106 is true, the position of the top movable ring is adjusted at 1108.

[0114] At 1110, the processing chamber processes one or more substrates. At 1112, the method determines whether the top movable ring is worn. If 1112 is false, the method returns to 1110. If 1112 is true and the top movable ring is worn, the method determines at 1120 whether the top movable ring is in a predetermined position, e.g., a highest position suitable for plasma processing of substrates. If 1120 is false, the top movable ring is raised at 1124 and the method continues at 1110. If 1120 is false, the system controller has the robot replace the top movable ring. In some examples, steps 1106 and 1108 are omitted.

[0115] Determining whether the top movable edge ring is worn can be done using one or more methods. In certain embodiments, the top movable edge ring is raised after a predetermined period of exposure to plasma, after a predetermined number of substrates have been processed, and / or other criteria. In another example, a sensor 196 is used to sense the height of the upper surface of the top movable ring.

[0116] 12, a method 1200 can be used to heat one or more edge rings to reposition or center the edge rings. When the ring, base plate, or other component is heated periodically, on an event-by-event basis, or using other criteria, the ring, base plate, or other component expands radially outward. The radially outward movement can be used, directly or indirectly, to center or otherwise horizontally position the top movable ring or other rings.

[0117] At 1210, a substrate is processed in a processing chamber. At 1212, the method determines whether it is time to adjust the position of a ring or other component. If 1212 is true, the method may optionally determine at 1214 whether the substrate is in the processing chamber. If 1214 is true, the method may optionally remove the substrate. For example, the substrate may be removed if the desired heating temperature exceeds the thermal budget of the substrate.

[0118] In 1218, the heating layer (or other heater of the substrate support or other component) is heated to a predetermined temperature, causing the ring, base plate, or other component to expand and center one or more rings. The ring, base plate, or other component expands radially outward. The radially outward movement can be used to center or otherwise position the top movable ring or other rings in the edge ring system. After a predetermined period of time, the heater is turned off in 1222, and substrate processing can resume in 1226.

[0119] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses in any way. The broad teachings of the present disclosure may be embodied in a variety of forms. Accordingly, while the present disclosure includes specific examples, other variations will be apparent from a study of the drawings, the specification, and the following claims, and the true scope of the disclosure is not so limited. It should be understood that one or more steps in a method can be performed in a different order (or simultaneously) without altering the principles of the disclosure. Furthermore, although each of these embodiments is described above as having specific features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and various combinations of one or more embodiments with each other remain within the scope of the present disclosure.

[0120] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, including "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." Unless explicitly stated as "direct," when a relationship between a first element and a second element is described in the above disclosure, the relationship can be a direct relationship, with no other intervening elements between the first and second elements, or an indirect relationship, with one or more intervening elements (spatial or functional) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning a non-exclusive logical OR (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C." As used herein, the term "about" means ±10% of a given value and / or ±5% of a given percentage.

[0121] In some implementations, the controller is part of a system that may be part of the examples described above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling pre-, during-, and post-processing operations of the semiconductor wafers or substrates. The electronics may be referred to as a "controller" and may control various components or sub-portions of one or more systems. Depending on the processing requirements and / or type of system, the controller may be programmed to control any of the processes disclosed herein, including process gas delivery, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, and wafer transfer into and out of a tool and other transfer tools and / or load locks connected or interfaced with a particular system.

[0122] Broadly speaking, a controller can be defined as an electronic device having various integrated circuits, logic circuits, memory, and / or software that receive instructions, issue instructions, control operations, cause cleaning operations, perform endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or for a system. The operating parameters, in some embodiments, may be part of a process engineer-defined recipe for implementing one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0123] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may reside in the “cloud” or be all or part of a fab host computer system, thereby enabling remote access of wafer processing. The computer may enable remote access to the system to monitor the current progress of a fabrication process, examine the history of past fabrication processes, examine trends or throughput indicators from multiple fabrication processes, change parameters of a current process, configure processing steps following a current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control. Thus, as noted above, the controller may be distributed, for example, by comprising one or more discrete controllers networked together and working toward a common purpose, such as the process and control described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on the chamber in combination with one or more remotely located integrated circuits in communication therewith (e.g., at the platform level or as part of a remote computer) to control the process on the chamber.

[0124] Without limitation, exemplary systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0125] As noted above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from tool locations and / or load ports within a semiconductor fabrication factory. The present invention can be realized, for example, in the following manner. Application example 1: 1. A movable edge ring system for a substrate processing system, comprising: a top movable ring including a first annular body disposed around the substrate support, the top movable ring being exposed to plasma during substrate processing; a movable support ring disposed radially outward of a base plate of the substrate support below the top movable ring, the movable support ring including a second annular body; a shield ring disposed radially outward of the movable support ring and including a third annular body; a cover ring including a fourth annular body disposed above the radially outer edge of the top movable ring; an actuator and lift pins configured to adjust the position of the top movable ring and the movable support ring relative to the shield ring and the cover ring; A movable edge ring system comprising: Application example 2: A movable edge ring system according to Application Example 1, wherein the top movable ring includes a first annular recess on the radially outer upper surface of the first annular body. Application example 3: The movable edge ring system of Application Example 2, the shield ring includes a protrusion extending upwardly from a radially outer upper surface of the third annular body; The covering is a second annular recess configured to receive the protrusion; and a third annular recess configured to align with the first annular recess of the top movable ring when the top movable ring and the movable support ring are raised. Application example 4: A movable edge ring system according to Application Example 1, wherein the top movable ring, the movable support ring, and the shield ring are conductive, and the cover ring is non-conductive. Application example 5: In the movable edge ring system of application example 4, when the top movable ring and the movable support ring are moved from a lowest position to an intermediate position and then to a highest position, the movable support ring: maintaining at least 70% of a vertical lateral portion of a radially outer surface of the movable support ring within a predetermined coupling gap of the shield ring; 50% or more of a vertical lateral portion of a radially inner surface of the movable support ring is positioned within a predetermined coupling gap of the base plate; A movable edge ring system, wherein the predetermined coupling gap is greater than 0 and less than or equal to 20 mils. Application example 6: In the movable edge ring system of application example 4, when the top movable ring and the movable support ring are moved from a lowest position to an intermediate position and then to a highest position, the movable support ring: maintaining at least 90% of a vertical lateral portion of a radially outer surface of the movable support ring within a predetermined coupling gap of the shield ring; At least 60% of a vertical lateral portion of a radially inner surface of the movable support ring is positioned within a predetermined coupling gap of the base plate; A movable edge ring system, wherein the predetermined coupling gap is greater than 0 and less than or equal to 20 mils. Application example 7: A movable edge ring system of Application Example 1, further comprising an edge ring including a fifth annular body having an "L"-shaped cross-section, wherein the substrate support includes a heating layer disposed on a base plate, and the edge ring is disposed between the heating layer of the substrate support and the radially inner surfaces of the top movable ring and the movable support ring. Application example 8: The movable edge ring system of application example 7, wherein the top movable ring, the movable support ring, and the shield ring are conductive, and the cover ring and the edge ring are non-conductive. Application example 9: A movable edge ring system according to Application Example 1, further comprising an edge ring comprising a fifth annular body and positioned radially outward of the shield ring and the cover ring, wherein the top movable ring, the movable support ring, and the shield ring are conductive, and the cover ring and the edge ring are non-conductive. Application example 10: A movable edge ring system according to Application Example 9, wherein the edge ring includes an annular recess on its radially inner upper surface for receiving the cover ring. Application example 11: A movable edge ring system according to Application Example 1, wherein the lower surface of the movable support ring includes a ring centering portion, and the movable support ring is centered when the lift pin biases the ring centering portion. Application example 12: In the movable edge ring system of application example 1, the lower surface of the top movable ring includes a ring centering portion, and the movable support ring is A movable edge ring system, wherein biasing a centering portion centers the top movable ring. Application example 13: The movable edge ring system of Application Example 1, wherein at least one of the top movable ring, the movable support ring, and the shield ring includes a horizontal ring spacer. Application 14: A movable edge ring system according to application example 13, wherein the horizontal ring spacer includes at least one of a shim, a protrusion, and a pin. Example 15: 1. A system comprising: The movable edge ring system of Application Example 1, a substrate support configured to support a substrate; a controller configured to control the actuators to move the lift pins to adjust the height of the movable support ring and the top movable ring relative to the substrate support; and A system comprising: Application 16: A system according to Application Example 15, wherein the controller is configured to adjust the height of the movable support ring and the top movable ring in response to at least one of the number of RF plasma cycles, the number of substrates being processed, and the duration of RF exposure. Application 17: 1. An edge ring system for a substrate processing system, comprising: a top stationary ring including a first annular body that is directly exposed to the plasma during substrate processing; a movable ring disposed radially outward of a base plate of the substrate support below the top fixed ring, the movable ring including a second annular body; a shield ring disposed radially outwardly below the movable ring, the shield ring including a third annular body; an actuator and lift pins configured to adjust the position of the movable ring relative to the top fixed ring and the shield ring; An edge ring system comprising: Application 18: The edge ring system of Application Example 17, further comprising a non-conductive cover ring disposed above the radially outer edge of the top fixing ring. Application 19: The edge ring system of application example 18, wherein the top fixing ring includes a first annular recess on the radially outer upper surface of the first annular body. Example 20: The edge ring system of Application Example 19, the shield ring includes a protrusion extending upwardly from a radially outer upper surface of the third annular body; The covering is a second annular recess configured to receive the protrusion; and a third annular recess configured to mate with the first annular recess of the top fixation ring. Example 21: 18. The edge ring system of application example 17, wherein the top fixed ring, the movable ring, and the shield ring are made of a conductive material. Application example 22: In the edge ring system of Application Example 21, when the movable ring is moved from the lowest position to the intermediate position and then to the highest position, the movable ring 70% or more of the vertical lateral portion of the radially outer surface of the movable ring is within the predetermined coupling gap of the shield ring; and maintaining at least 50% of a vertical lateral portion of a radially inner surface of the movable ring within a predetermined coupling gap of the base plate; The edge ring system, wherein the predetermined bonding gap is 30 mils or less. Application 23: An edge ring system according to application example 21, wherein the movable ring has a "T" shaped cross section and the shield ring has an inverted "T" shaped cross section. Application 24: An edge ring system according to Application Example 17, further comprising a cover ring including a fourth annular body, wherein the substrate support includes a heating layer disposed on a base plate, and the cover ring is disposed between the heating layer of the substrate support and the radially inner surface of the top fixing ring when the top fixing ring is in a lowered position. Example 25: 25. The edge ring system of application example 24, wherein the top fixed ring, the movable ring, and the shield ring are conductive, and the cover ring is non-conductive. Application 26: The edge ring system of application example 20 further comprises an edge ring including an annular body and positioned radially outward of the shield ring. Example 27: An edge ring system according to Application Example 26, wherein the edge ring includes an annular recess on its radially inner upper surface for receiving the cover ring, the top fixed ring, the movable ring, and the shield ring are conductive, and the cover ring and the edge ring are non-conductive. Application 28: An edge ring system according to Application Example 17, wherein the top fixed ring includes a radially inner portion, an upwardly inclined portion extending from the radially inner portion, and a flat portion extending from the upwardly inclined portion. Example 29: An edge ring system according to application example 28, wherein the movable ring includes a radially inwardly protruding portion and a radially outwardly protruding portion, and the radially inner upper surface of the radially inwardly protruding portion includes an inclined portion. Example 30: An edge ring system according to application example 29, wherein the upper surface of the inclined portion extends parallel to the lower surface of the upwardly inclined portion. Example 31: An edge ring system according to Application Example 17, wherein the lower surface of the movable ring includes a ring centering portion, and the movable ring is centered when the lift pin biases the ring centering portion of the movable ring. Application 32: The edge ring system of application example 17, wherein at least one of the top fixed ring, the movable ring, and the shield ring includes a horizontal ring spacer. Application 33: The edge ring system of application example 32, wherein the horizontal ring spacer includes at least one of a shim, a protrusion, and a pin. Example 34: 1. A system comprising: Application example 17: Edge ring system, a substrate support configured to support a substrate; a controller configured to adjust the height of the actuator such that the lift pins are moved to adjust the height of the movable ring relative to the top fixed ring; and A system comprising: Application 35: A system according to Application Example 34, wherein the controller is configured to adjust the height of the movable ring in response to at least one of the number of RF plasma cycles, the number of substrates being processed, and the duration of RF exposure. Application 36: 1. A substrate processing system, comprising: a substrate support including a cylindrical body, an annular protruding portion extending from a lower portion of the cylindrical body, and a shield portion extending upward from a radially outer edge of the annular protruding portion, wherein a cavity is defined between the cylindrical body and the shield portion; a top movable ring including a first annular body disposed around the substrate support, the top movable ring being exposed to plasma during substrate processing; a movable support ring including a second annular body, the movable support ring being positioned within the cavity between the shield portion and the cylindrical body below the top movable ring; A substrate processing system comprising: Application 37: The substrate processing system of Application Example 36, a cover ring disposed above the radially outer edge of the top movable ring; an actuator and lift pins configured to adjust the position of the top movable ring and the movable support ring relative to the shield portion and the cover ring; The substrate processing system further comprises: Application 38: 38. The substrate processing system of claim 37, wherein the top movable ring includes a first annular recess on a radially outer upper surface of the first annular body. Application 39: 38. The substrate processing system of application example 37, wherein the top movable ring, the cylindrical body, the movable support ring, and the shield portion are conductive, and the cover ring is non-conductive. Example 40: In the substrate processing system of Example 39, when the top movable ring and the movable support ring are moved from a lowest position to an intermediate position and then to a top position, the movable support ring: maintaining at least 70% of a vertical lateral portion of the radially inner surface of said movable support ring within a predetermined coupling gap of said cylindrical body; At least 50% of a vertical lateral portion of a radially outer surface of the movable support ring is positioned within the predetermined coupling gap of the shield portion; The substrate processing system, wherein the predetermined bonding gap is greater than 0 and less than or equal to 20 mils. Example 41: A substrate processing system according to Application Example 37, wherein the lower surface of the movable support ring includes a ring centering portion, and when the lift pins bias the ring centering portion of the movable support ring, the movable support ring is centered relative to the cylinder. Example 42: 37. The substrate processing system of claim 36, wherein at least one of the top movable ring, the movable support ring, and the shield ring includes a horizontal ring spacer. Example 43: 43. The substrate processing system of application example 42, wherein the horizontal ring spacer includes at least one of a shim, a protrusion, and a pin. Application 44: The substrate processing system of Application Example 42, An actuator; A lift pin; a controller configured to cause the actuator to move the lift pins to adjust the height of the movable support ring and the top movable ring relative to the substrate support. Example 45: A substrate processing system according to Application Example 44, wherein the controller is configured to adjust the height of the movable support ring and the top movable ring in response to at least one of the number of RF plasma cycles, the number of substrates being processed, and the duration of RF exposure. Application 46: 1. A movable edge ring system for a substrate processing system, comprising: a top movable ring including a first annular body disposed around the substrate support, the top movable ring having an upper surface exposed to plasma during substrate processing; a movable support ring disposed radially outward of a base plate of the substrate support below the top movable ring, the movable support ring including a second annular body; a shield ring disposed radially outwardly below the movable support ring, the shield ring including a third annular body; an actuator and lift pins configured to adjust the position of the top movable ring and the movable support ring relative to the shield ring; the top movable ring, the movable support ring, and the shield ring are made of a conductive material; As the top movable ring and the movable support ring are moved from a lowest position to an intermediate position and then to a top position, the movable support ring: 70% or more of the vertical lateral portion of the radially outer surface of the movable support ring is within the predetermined coupling gap of the shield ring; and maintaining at least 50% of a vertical lateral portion of a radially inner surface of the movable support ring within a predetermined coupling gap of the base plate; the predetermined bond gap is greater than 0 and less than or equal to 20 mils; Movable edge ring system. Example 47: The movable edge ring system of application example 46, wherein the predetermined coupling gap is greater than 0 and less than or equal to 10 mils.

Claims

1. 1. A movable edge ring system for a substrate processing system, comprising: a top movable ring including a first annular body disposed around a substrate support, the top movable ring including a conductive material and exposed to a plasma during substrate processing, the top movable ring including a first annular recess on a radially outer upper surface of the first annular body; a movable support ring disposed radially outward of a base plate of the substrate support below the top movable ring, the movable support ring including a second annular body; a shield ring disposed radially outward of the movable support ring and including a third annular body; a cover ring including a fourth annular body disposed above a radially outer edge of the top movable ring, the cover ring including a second annular recess on a radially inner lower surface of the fourth annular body, the second annular recess configured to align with the first annular recess of the top movable ring when the top movable ring and the movable support ring are raised; an actuator and lift pins configured to adjust the position of the top movable ring and the movable support ring relative to the shield ring and the cover ring; A movable edge ring system comprising:

2. The movable edge ring system of claim 1, the shield ring includes a protrusion extending upwardly from a radially outer upper surface of the third annular body; The covering is A movable edge ring system including a third annular recess configured to receive the protrusion.

3. 10. The movable edge ring system of claim 1, wherein the top movable ring, the movable support ring, and the shield ring are conductive, and the cover ring is non-conductive.

4. 1. A movable edge ring system for a substrate processing system, comprising: a top movable ring including a first annular body disposed around the substrate support, the top movable ring being exposed to plasma during substrate processing; a movable support ring disposed radially outward of a base plate of the substrate support below the top movable ring, the movable support ring including a second annular body; a shield ring disposed radially outward of the movable support ring and including a third annular body; a cover ring including a fourth annular body disposed above the radially outer edge of the top movable ring; an actuator and lift pins configured to adjust the position of the top movable ring and the movable support ring relative to the shield ring and the cover ring; Equipped with As the top movable ring and the movable support ring are moved from a lowest position to an intermediate position and then to a top position, the movable support ring: maintaining at least 70% of a vertical lateral portion of a radially outer surface of the movable support ring within a predetermined coupling gap of the shield ring; maintaining at least 50% of a vertical lateral portion of a radially inner surface of the movable support ring positioned within a predetermined coupling gap of the base plate; The movable edge ring system, wherein the predetermined coupling gap is greater than 0 and less than or equal to 20 mils.

5. 1. A movable edge ring system for a substrate processing system, comprising: a top movable ring including a first annular body disposed around the substrate support, the top movable ring being exposed to plasma during substrate processing; a movable support ring disposed radially outward of a base plate of the substrate support below the top movable ring, the movable support ring including a second annular body; a shield ring disposed radially outward of the movable support ring and including a third annular body; a cover ring including a fourth annular body disposed above the radially outer edge of the top movable ring; an actuator and lift pins configured to adjust the position of the top movable ring and the movable support ring relative to the shield ring and the cover ring; Equipped with As the top movable ring and the movable support ring are moved from a lowest position to an intermediate position and then to a top position, the movable support ring: maintaining at least 90% of a vertical lateral portion of a radially outer surface of the movable support ring within a predetermined coupling gap of the shield ring; maintaining at least 60% of a vertical lateral portion of a radially inner surface of the movable support ring positioned within a predetermined coupling gap of the base plate; The movable edge ring system, wherein the predetermined coupling gap is greater than 0 and less than or equal to 20 mils.

6. 10. The movable edge ring system of claim 1, further comprising an edge ring including a fifth annular body having an "L" shaped cross section, wherein the substrate support includes a heating layer disposed on a base plate, and the edge ring is disposed between the heating layer of the substrate support and radially inner surfaces of the top movable ring and the movable support ring.

7. 7. The movable edge ring system of claim 6, wherein the top movable ring, the movable support ring, and the shield ring are conductive, and the cover ring and the edge ring are non-conductive.

8. 10. The movable edge ring system of claim 1, further comprising an edge ring comprising a fifth annular body and positioned radially outward of the shield ring and the cover ring, wherein the top movable ring, the movable support ring, and the shield ring are conductive, and the cover ring and the edge ring are non-conductive.

9. 9. The movable edge ring system of claim 8, wherein the edge ring includes an annular recess on its radially inner upper surface for receiving the cover ring.

10. 2. The movable edge ring system of claim 1, wherein a lower surface of the movable support ring includes a ring centering portion, and the movable support ring is centered when the lift pins bias the ring centering portion.

11. 2. The movable edge ring system of claim 1, wherein a lower surface of the top movable ring includes a ring centering portion, and the movable support ring is positioned adjacent the ring centering portion of the top movable ring. A movable edge ring system, wherein biasing a centering portion centers the top movable ring.

12. 10. The movable edge ring system of claim 1, wherein at least one of the top movable ring, the movable support ring, and the shield ring includes a horizontal ring spacer.

13. The movable edge ring system of claim 12 , wherein the horizontal ring spacer comprises at least one of a shim, a protrusion, and a pin.

14. 1. A system comprising: The movable edge ring system of claim 1 ; a substrate support configured to support a substrate; a controller configured to control the actuators to move the lift pins to adjust the height of the movable support ring and the top movable ring relative to the substrate support; and A system comprising:

15. 15. The system of claim 14, wherein the controller is configured to adjust the height of the movable support ring and the top movable ring in response to at least one of a number of RF plasma cycles, a number of substrates being processed, and a duration of RF exposure.

16. 1. A movable edge ring system for a substrate processing system, comprising: a top movable ring including a first annular body disposed around a substrate support, an upper surface of the top movable ring including a conductive material and exposed to a plasma during substrate processing; a movable support ring disposed radially outward of a base plate of the substrate support below the top movable ring, the movable support ring including a second annular body; a shield ring disposed radially outwardly below the movable support ring, the shield ring including a third annular body; an actuator and lift pins configured to adjust the position of the top movable ring and the movable support ring relative to the shield ring; the top movable ring, the movable support ring, and the shield ring are made of a conductive material; As the top movable ring and the movable support ring are moved from a lowest position to an intermediate position and then to a top position, the movable support ring: 70% or more of the vertical lateral portion of the radially outer surface of the movable support ring is within the predetermined coupling gap of the shield ring; and maintaining at least 50% of a vertical lateral portion of a radially inner surface of the movable support ring within a predetermined coupling gap of the base plate; the predetermined bonding gap is greater than 0 and less than or equal to 20 mils; Movable edge ring system.

17. 17. The movable edge ring system of claim 16, wherein the predetermined coupling gap is greater than 0 and less than or equal to 10 mils.

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