Semiconductor Devices

Abstract

To provide a semiconductor device which can be downsized.SOLUTION: A semiconductor device includes a light emitting element provided on an input side lead, a switching element provided on an output side lead, and a light-receiving element. The output side lead faces the input side lead via the light emitting element. The switching element is located between the light emitting element and the output side lead. The switching element includes a front-surface-side electrode facing the light emitting element, and a control pad provided on the front surface side facing the light emitting element together with the front-surface-side electrode. The light-receiving element is connected on the front-surface-side electrode of the switching element via an insulating member and is located between the switching element and the light emitting element. The light-receiving element includes a first bonding pad electrically connected to the control pad of the switching element via a first conductor, and a second bonding pad electrically connected to the front-surface-side electrode of the switching element via a second conductor.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The embodiments relate to a semiconductor device. [Background technology]

[0002] Miniaturization of semiconductor devices is required. For example, in a semiconductor device in which a photocoupler and a switching element are sealed in a resin package, if the current capacity of the switching element increases, the chip size increases, and the size of the resin package also increases. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-96105 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments provide a semiconductor device that can be miniaturized. [Means for solving the problem]

[0005] The semiconductor device according to the embodiment includes an input lead, a light-emitting element, an output lead, a switching element, a light-receiving element, and a first resin member. The light-emitting element is provided on the input lead. The output lead faces the input lead via the light-emitting element. The switching element is provided on the output lead and is located between the light-emitting element and the output lead. The switching element has a back-side electrode connected to the output lead, a front-side electrode located opposite the back-side electrode and facing the light-emitting element, and a control pad provided on the front side facing the light-emitting element together with the front-side electrode. The light-receiving element is connected to the front-side electrode of the switching element via an insulating member and is located between the switching element and the light-emitting element. The light-receiving element has a first bonding pad electrically connected to the control pad of the switching element via a first conductive member and a second bonding pad electrically connected to the front-side electrode of the switching element via a second conductive member. The first resin member has a portion interposed between the light-emitting element and the light-receiving element, seals the light-emitting element on the input side lead, seals the switching element and the light-receiving element on the output side lead, and transmits radiated light from the light-emitting element toward the light-receiving element. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a schematic diagram illustrating a semiconductor device according to an embodiment; [Figure 2] 1 is a perspective view schematically illustrating a part of a semiconductor device according to an embodiment. [Figure 3] 2 is a schematic cross-sectional view showing a switching element of the semiconductor device according to the embodiment. FIG. [Figure 4] FIG. 2 is a schematic plan view showing a switching element of the semiconductor device according to the embodiment. [Figure 5] 1 is a schematic diagram illustrating a part of a semiconductor device according to an embodiment; [Figure 6] 1 is a circuit diagram illustrating a semiconductor device according to an embodiment. [Figure 7]FIG. 10 is a schematic diagram showing a part of a semiconductor device according to a modified example of the embodiment. [Figure 8] FIG. 10 is a circuit diagram illustrating a semiconductor device according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments will be described with reference to the drawings. Identical parts in the drawings are assigned the same numbers, and detailed descriptions thereof will be omitted as appropriate, and different parts will be described. Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc., are not necessarily the same as those in reality. Furthermore, even when the same part is shown, the dimensions and ratios may be different depending on the drawing.

[0008] Furthermore, the arrangement and configuration of each part will be explained using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are mutually perpendicular and represent the X-direction, Y-direction, and Z-direction, respectively. In addition, the Z-direction may be explained as upward and the opposite direction as downward.

[0009] 1(a) and (b) are schematic diagrams showing a semiconductor device 1 according to an embodiment. Fig. 1(a) is a cross-sectional view showing the semiconductor device 1. Fig. 1(b) is a perspective view showing the appearance of the semiconductor device 1. The semiconductor device 1 is, for example, a photorelay.

[0010] 1(a), the semiconductor device 1 includes an input lead 10, an output lead 20, a light-emitting element 30, a switching element 40, and a light-receiving element 50. The input lead 10 and the output lead 20 are, for example, gold-plated copper plates.

[0011] The light emitting element 30 is provided on the input lead 10. The light emitting element 30 is, for example, a light emitting diode. The light emitting element 30 is electrically connected to the input lead 10 via a conductive member MW, for example, a metal wire.

[0012] The output lead 20 faces the input lead 10 via the light emitting element 30. The switching element 40 is provided on the output lead 20. The switching element 40 is located between the light emitting element 30 and the output lead 20. The switching element 40 is, for example, a MOS transistor.

[0013] The light receiving element 50 is provided on the switching element 40, between the light emitting element 30 and the switching element 40. The light receiving element 50 is electrically connected to the switching element 40 via another conductive member MW. The light receiving element 50 is, for example, a photodiode.

[0014] The semiconductor device 1 further includes a first resin member 60, a second resin member 70, and a third resin member 80.

[0015] The first resin member 60 has a portion interposed between the light-emitting element 30 and the light-receiving element 50, and seals the light-emitting element 30 on the input lead 10, and seals the switching element 40 and the light-receiving element 50 on the output lead 10. The first resin member 60 is, for example, an epoxy resin.

[0016] The second resin member 70 is provided on the input lead 10 so as to cover the light emitting element 30. The first resin member 60 covers the light emitting element 30 via the second resin member 70. The second resin member 70 is made of, for example, silicone.

[0017] The first resin member 60 and the second resin member 70 transmit the emitted light traveling from the light emitting element 30 toward the light receiving element 50. The second resin member 70 is provided so as to relieve the stress of the first resin member 60.

[0018] The third resin member 80 is provided to cover the first resin member 60. The third resin member 80 blocks emitted light from the light emitting element 30 and external light. The third resin member 80 is, for example, an epoxy resin in which a blocking material such as carbon or silica is dispersed. The input side lead 10 and the output side lead 20 each have a portion that extends outward from the third resin member 80.

[0019] 1(b), the third resin member 80 is molded to have, for example, a decahedral outer shape. The input leads 10 and the output leads 20 are provided so as to extend from opposite side surfaces of the third resin member 80. The input leads 10 include a first input lead 10a and a second input lead 10b. The output leads 20 include a first output lead 20a and a second output lead 20b.

[0020] In the following description, there may be cases where there is no distinction between the first input lead 10a and the second input lead 10b, and they will be referred to as the input lead 10. The other components will also be described in the same manner.

[0021] In the semiconductor device 1, by arranging the switching element 40 and the light receiving element 50 so as to overlap in the Z direction, the size of the third resin member 80 in the X direction and Y direction, that is, the size of the resin package, can be reduced.

[0022] FIG. 2 is a perspective view schematically illustrating a portion of a semiconductor device 1 according to the embodiment. The semiconductor device 1 includes a first switching element 40a and a second switching element 40b. The first switching element 40a is provided on the first output lead 20a via a first connecting member CM1. The second switching element 40b is provided on the second output lead 20b via another first connecting member CM1. The first output lead 20a and the second output lead 20b are aligned, for example, in the Y direction. The first switching element 40a is electrically connected to the first output lead 20a via the conductive first connecting member CM1. The second switching element 40b is electrically connected to the second output lead 20b via another conductive first connecting member CM1.

[0023] The light-receiving element 50 is provided across the first switching element 40a and the second switching element 40b. The light-receiving element 50 is connected to the first switching element 40a and the second switching element 40b via a second connecting member CM2. The second connecting member CM2 is, for example, an insulating adhesive (see FIG. 3). The light-receiving element 50 is also electrically connected to the first switching element 40a via a first conductive member MW1. The light-receiving element 50 is electrically connected to the second switching element 40b via a second conductive member MW2. Therefore, the first switching element 40a and the second switching element 40b are also aligned in the Y direction.

[0024] The first switching element 40a is electrically connected to the second switching element 40b via the third conductive member MW3 and the fourth conductive member MW4. The first to fourth conductive members MW1 to MW4 are, for example, metal wires.

[0025] The third conductive member MW3 and the fourth conductive member MW4 are arranged so as not to intersect with the first conductive member MW1 and the second conductive member MW2 in a direction perpendicular to the surface of the switching element 40 connected to the light receiving element 50, for example, in the Z direction. This allows the height of the first conductive member MW1 and the second conductive member MW2 in the direction perpendicular to the surface of the switching element 40 to be reduced.

[0026] 1(a), when the input lead 10 and the output lead 20 are arranged so that the light emitting element 30 and the light receiving element 50 face each other, the light emitting element 30 and the light receiving element 50 can be brought closer to each other by lowering the looping height of the first conductive member MW1 and the second conductive member MW2. In other words, the distance between the input lead 10 and the output lead 20 can be narrowed. This allows the height of the third resin member 80 in the Z direction, i.e., the height of the resin package, to be reduced.

[0027] 3 is a schematic cross-sectional view showing a switching element 40 of the semiconductor device 1 according to the embodiment. The switching element 40 includes a front-side electrode 41, a control pad 43, a rear-side electrode 45, a semiconductor portion 140, and a control electrode GE.

[0028] The front surface electrode 41 is provided on the front surface side of the semiconductor section 140 facing the light emitting element 30 (see FIG. 1(a)). The control pad 43 is aligned with the front surface electrode 41 on the front surface side of the semiconductor section 140. The control pad 43 is provided at a distance from the front surface electrode 41.

[0029] The light receiving element 50 is connected onto the front-side electrode 41 via an insulating member SF and an insulating second connection member CM2. The insulating member SF is, for example, a polyimide film. The insulating member SF covers the front-side electrode 41. The insulating member SF also has an opening CO1 in a portion not connected to the light receiving element 50. The front-side electrode 41 is exposed within the opening CO1.

[0030] The back surface electrode 45 is provided on the back surface of the semiconductor portion 140. The back surface electrode 45 is connected to the output lead 20 via, for example, a first connection member CM1. The first connection member CM1 is, for example, a silver paste and has conductivity. The back surface electrode 45 is electrically connected to the output lead 20 via the first connection member CM1.

[0031] The control electrode GE is, for example, a gate electrode. The control electrode GE has a trench gate structure and is provided, for example, between the front-side electrode 41 and the back-side electrode 45. The control electrode GE is electrically insulated from the semiconductor portion 140 by a gate insulating film GF. In addition, the control electrode GE is electrically insulated from the front-side electrode 41 by an interlayer insulating film IF.

[0032] The control pad 43 is electrically connected to the control electrode GE by, for example, a control wiring GI1 indicated by a dashed line in Fig. 3. The control pad 43 is provided on the front surface side of the semiconductor part 140 via an interlayer insulating film IF. The insulating member SF further has an opening CO2 that exposes the control pad 43.

[0033] The semiconductor section 140 includes an n-type drift layer 141, a p-type base layer 143, an n-type source layer 145, and an n-type drain layer 147. The p-type base layer 143 is provided between the n-type drift layer 141 and the front-side electrode 41. The n-type source layer 145 is provided partially on the p-type base layer 143, between the p-type base layer 143 and the front-side electrode 41. The n-type drain layer 147 is provided between the n-type drift layer 141 and the back-side electrode 45.

[0034] The front-side electrode 41 is electrically connected to the p-type base layer 143 and the n-type source layer 145. The p-type base layer 143 faces the control electrode GE via the gate insulating film GF between the n-type drift layer 141 and the n-type source layer 145. The back-side electrode 45 is electrically connected to the n-type drain layer 147.

[0035] 4 is a schematic plan view showing the switching element 40 of the semiconductor device 1 according to the embodiment. 4 shows the surface side of the switching element 40 that is connected to the light receiving element 50.

[0036] 4, the insulating member SF is provided to cover the surface of the switching element 40 that faces the light-emitting element 30. The insulating member SF has, for example, two openings CO1 and two openings CO2. The openings CO1 and CO2 are provided, for example, at positions that are line-symmetrical with respect to a center line CL extending in the X direction. This makes it possible to use the same chip for the first switching element 40a and the second switching element 40b, thereby reducing costs.

[0037] The opening CO1 exposes the front-side electrode 41. In this example, the two openings CO1 are spaced apart from each other, but the two openings may be connected together.

[0038] The control pad 43 and the control pad 47 are exposed in the two openings CO2, respectively. The control pad 47, like the control pad 43 (see FIG. 3), is provided on the front surface side of the semiconductor portion 140 via an interlayer insulating film IF. The control pads 43 and 47 are electrically connected, for example, by a control wiring GI2 shown by a dashed line in FIG. 4. That is, the control pad 47, together with the control pad 43, is electrically connected, for example, to the control electrode GE.

[0039] The opening CO1 is provided between the opening CO2 and a connection region CR to which the light receiving element 50 is connected. The two openings CO2 are provided so as to have a wider interval than the interval between the two openings CO1.

[0040] 5(a) and 5(b) are schematic diagrams showing a part of the semiconductor device 1 according to the embodiment, in which Fig. 5(a) is a plan view showing the switching element 40 and the light receiving element 50 stacked on the output lead 20, and Fig. 5(b) is a side view.

[0041] 5(a), the light-receiving element 50 has a first bonding pad 51 and a second bonding pad 53. The first bonding pad 51 is electrically connected to the control pad 43a of the first switching element 40a via a first conductive member MW1. The second bonding pad 53 is electrically connected to the front-side electrode 41b of the second switching element 40b via a second conductive member MW2.

[0042] The control pad 47a of the first switching element 40a is electrically connected to the control pad 43b of the second switching element 40b via the third conductive member MW3. The control pad 47a of the first switching element 40a is electrically connected to the control pad 43a via the control wiring GI2a. Therefore, the first bonding pad 51 of the light receiving element 50 is also electrically connected to the control pad 43b of the second switching element 40b via the first conductive member MW1 and the third conductive member MW3.

[0043] The surface-side electrode 41a of the second switching element 40a is electrically connected to the surface-side electrode 41b of the second switching element 40b via the fourth conductive member MW4. Therefore, the second bonding pad 53 of the light-receiving element 50 is also electrically connected to the surface-side electrode 41a of the first switching element 40a via the second conductive member MW2 and the fourth conductive member MW4.

[0044] By arranging the openings CO1 and CO2 shown in FIG. 4, the first conductive member MW1 and the second conductive member MW2 can be arranged so as not to intersect with the third conductive member MW3 and the fourth conductive member MW4 in the Z direction.

[0045] 5(b), the light-receiving element 50 has a first bonding region BR1 and a second bonding region BR2. The bonding region BR1 overlaps the first switching element 40a in the Z direction. The bonding region BR2 overlaps the second switching element 40b in the Z direction.

[0046] The first bonding pad 51 of the light-receiving element 50 is preferably provided on the first bonding region BR1. The second bonding pad 53 of the light-receiving element 50 is preferably provided on the second bonding region BR2. This reduces damage to the light-receiving element 50 caused by the load when bonding the first conductive member MW1 and the second conductive member MW2 to the first bonding pad 51 and the second bonding pad 53.

[0047] Furthermore, in order to miniaturize the semiconductor device 1, it is preferable to reduce the Z-direction thickness Tsd of the switching element 40 and the Z-direction thickness Trd of the light-receiving element 50. This makes it possible to narrow the distance between the input lead 10 and the output lead 20 when the light-receiving element 50 is arranged to face the light-emitting element 30, and to reduce the Z-direction height of the third resin member 80 (height of the resin package).

[0048] However, since the light-receiving element 50 is disposed across the output leads 20a and 20b, which are spaced apart from each other, it is required to have strength sufficient to withstand the stress applied during the manufacturing process before being sealed with the first resin member 60. In other words, it is preferable that the light-receiving element 50 have high shear strength. Therefore, it is desirable that the thickness Trd of the light-receiving element 50 be thick enough to maintain that strength. For example, it is preferable that the thickness Trd of the light-receiving element 50 be at least thicker than the thickness Tsd of the switching element 40.

[0049] 6 is a circuit diagram showing the semiconductor device 1 according to the embodiment. The first input lead 10a is connected to the anode of the light emitting element 30. The second input lead 10b is connected to the cathode of the light emitting element 30.

[0050] The light receiving element 50 includes a plurality of photodiodes 55 and a control circuit 57. The plurality of photodiodes 55 are connected in series and disposed opposite the light emitting element 30. The photodiodes 55 detect the light emitted from the light emitting element 30. The control circuit 57 is, for example, a waveform shaping circuit. The control circuit 57 may also be a discharge circuit, a protection circuit, or the like.

[0051] The output of the photodiode 55 is output to the first bonding pad 51 and the second bonding pad 53 via the control circuit 57. The first bonding pad 51 is electrically connected to, for example, the anode side of the photodiode 55. The second bonding pad 53 is electrically connected to, for example, the cathode side of the photodiode 55.

[0052] The first bonding pad 51 of the light receiving element 50 is electrically connected to the control pad 43a of the first switching element 40a via the first conductive member MW1. The control pad 43a of the first switching element 40a is electrically connected to the control pad 47a of the first switching element 40a via the control wiring GI2a. The control pad 47a is electrically connected to the control pad 43b of the second switching element 40b via the third conductive member MW3.

[0053] The second bonding pad 53 of the light-receiving element 50 is electrically connected to the front-side electrode 41b of the second switching element 40b via the second conductive member MW2. The front-side electrode 41b of the second switching element 40b is electrically connected to the front-side electrode 41a of the first switching element 40a via the fourth conductive member MW4.

[0054] The first output lead 20a is electrically connected to the back electrode 45 of the first switching element 40a via a first connecting member CM1 (see FIG. 3). The second output lead 20b is electrically connected to the back electrode 45 of the second switching element 40b via another first connecting member CM1 (see FIG. 3).

[0055] For example, signals that control the on / off state of electrical continuity between the first output lead 20a and the second output lead 20b are input to the first input lead 10a and the second input lead 10b. The light-emitting element 30 emits an optical signal corresponding to the signal input to the first input lead 10a and the second input lead 10b, and the light-receiving element 50 detects the optical signal emitted from the light-emitting element 30. The light-receiving element 50 outputs a control signal corresponding to the optical signal to the control electrodes GE of the first switching element 40a and the second switching element 40b via the control pads 43a and 43b (see FIG. 3). This controls the electrical continuity between the first output lead 20a and the second output lead 20b.

[0056] 7(a) and 7(b) are schematic diagrams showing a part of a semiconductor device 2 according to a modified example of the embodiment. Fig. 7(a) is a perspective view showing a switching element 40 and a light receiving element 50. Fig. 7(b) is a plan view showing the front surface side of the switching element 40.

[0057] The semiconductor device 2 includes a first switching element 40a and a second switching element 40b. The first switching element 40a is provided on a first output lead 20a via a first connecting member CM1. The second switching element 40b is provided on a second output lead 20b via another first connecting member CM1. The first output lead 20a and the second output lead 20b are aligned, for example, in the Y direction.

[0058] The light receiving element 50 is provided across the first switching element 40a and the second switching element 40b. The light receiving element 50 has first bonding pads 51a and 51b and second bonding pads 53a and 53b on the surface side facing the light emitting element 30.

[0059] The first switching element 40a and the second switching element 40b are aligned, for example, in the Y direction. The first bonding pads 51a and 51b and the second bonding pads 53a and 53b are aligned, for example, in the Y direction on the surface of the light receiving element 50.

[0060] The second bonding pads 53a and 53b are provided between the first bonding pads 51a and 51b. The second bonding pad 53a is provided between the first bonding pads 51a and 53b. The second bonding pad 53b is provided between the second bonding pad 53a and the first bonding pad 51b.

[0061] The first bonding pad 51a is electrically connected to the control pad 43a of the first switching element 40a via a first conductive member MW1, and the second bonding pad 53a is electrically connected to the front electrode 41c of the first switching element 40a via a second conductive member MW2.

[0062] The first bonding pad 51b is electrically connected to the control pad 47b of the second switching element 40b via a fifth conductive member MW5. The second bonding pad 53b is electrically connected to the front-side electrode 41d of the second switching element 40b via a sixth conductive member MW6. The front-side electrode 41b of the second switching element 40b is electrically connected to the front-side electrode 41a of the first switching element 40a via a fourth conductive member MW4. The fifth conductive member MW5 and the sixth conductive member MW6 are, for example, metal wires.

[0063] The second conductive member MW2 is connected to the surface-side electrode 41c between the position where the light-receiving element 50 and the first switching element 40a are connected and the surface-side electrode 41a. The sixth conductive member MW6 is connected to the surface-side electrode 41d between the position where the light-receiving element 50 and the second switching element 40b are connected and the surface-side electrode 41b. This allows the second conductive member MW2 and the sixth conductive member MW6 to be arranged so as not to intersect with the fourth conductive member MW4 in the direction perpendicular to the surface of the switching element 40 connected to the light-receiving element 50, for example, in the Z direction.

[0064] Such an arrangement of the conductive members MW allows the looping height of each of the first conductive member MW1, the second conductive member MW2, the fifth conductive member MW5, and the sixth conductive member MW6 to be reduced, thereby reducing the height of the third resin member 80 in the Z direction.

[0065] 7(b), the insulating member SF has, for example, two openings CO1 and two openings CO2. A portion of the surface-side electrode 41 is exposed in each of the two openings CO1. In FIG. 7(a), the surface-side electrodes 41 exposed in the opening CO1 of the first switching element 40a are distinguished as surface-side electrodes 41a and 41c, and the surface-side electrodes 41 exposed in the opening CO1 of the second switching element 40b are distinguished as surface-side electrodes 41b and 41d.

[0066] The openings CO1 are, for example, arranged spaced apart from each other on a center line CL extending in the X direction, and expose the front-side electrodes 41. In this example, the two openings CO1 are spaced apart from each other, but the two openings CO1 may be joined together.

[0067] The openings CO2 are provided at positions that are line-symmetric with respect to the center line CL. The two openings CO2 expose the control pads 43 and 47, respectively. The control pads 43 and 47 are electrically connected via, for example, a control wiring GI2.

[0068] The opening CO1 is provided between the control wiring GI2 and the connection region CR to which the light receiving element 50 is connected. The two openings CO2 are provided at the corners of the rectangular front surface of the switching element 40, respectively.

[0069] 8 is a circuit diagram showing a semiconductor device 2 according to a modified example of the embodiment. In this example, a light-receiving element 50 has first bonding pads 51a and 51b and second bonding pads 53a and 53b.

[0070] The first bonding pads 51a and 51b are electrically connected to, for example, the anode side of a photodiode 55 via a control circuit 57. The second bonding pads 53a and 53b are electrically connected to, for example, the cathode side of a photodiode 55 via a control circuit 57.

[0071] The first bonding pad 51a is electrically connected to the control pad 43a of the first switching element 40a via a first conductive member MW1, and the first bonding pad 51b is electrically connected to the control pad 47b of the second switching element 40b via a fifth conductive member MW5.

[0072] The second bonding pad 53a is electrically connected to the surface-side electrode 41a of the first switching element 40a via the second conductive member MW2. The second bonding pad 53b is electrically connected to the surface-side electrode 41b of the second switching element 40b via the sixth conductive member MW6. The surface-side electrode 41c of the first switching element 40a is connected to the surface-side electrode 41d of the second switching element 40b via the fourth conductive member MW4.

[0073] The light emitting element 30 is electrically connected to the first input lead 10a and the second input lead 10b. The first input lead 10a is electrically connected to, for example, the anode side of the light emitting element 30. The second input lead 10b is electrically connected to, for example, the cathode side of the light emitting element 30.

[0074] The first output lead 20a is electrically connected to the back surface electrode 45 of the first switching element 40a (see FIG. 3). The second output lead 20b is electrically connected to the back surface electrode 45 of the second switching element 40b (see FIG. 3).

[0075] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0076] REFERENCE SIGNS LIST 1, 2...Semiconductor device, 10...Input side lead, 10a...First input side lead, 10b...Second input side lead, 20...Output side lead, 20a...First output side lead, 20b...Second output side lead, 30...Light emitting element, 40...Switching element, 40a...First switching element, 40b...Second switching element, 41, 41a, 41b, 41c, 41d...Front side electrode, 43, 43a, 43b, 47, 47a, 47b...Control pad, 45...Back side electrode, 50...Light receiving element, 51, 51a, 51b...First bonding pad, 53, 53a, 53b...Second bonding pad, 55...Photodiode, 57...Control circuit, 60...First resin member, 70...Second resin member, 80...Third resin member, 140...semiconductor portion, 141...n-type drift layer, 143...p-type base layer, 145...n-type source layer, 147...n-type drain layer, BR1, BR2...bonding region, CL...center line, CM1...first connecting member, CM2...second connecting member, CO1, CO2...opening, CR...connection region, GE...control electrode, GF...gate insulating film, GI1, GI2, GI2a, GI2b...control wiring, IF...interlayer insulating film, MW...conductive member, MW1...first conductive member, MW2...second conductive member, MW3...third conductive member, MW4...fourth conductive member, MW5...fifth conductive member, MW6...sixth conductive member, SF...insulating member

Claims

1. An input side lead having a first portion and a second portion extending from the first portion in one direction in a first direction; a light emitting element provided on the first portion of the input lead; an output lead having a third portion and a fourth portion extending from the third portion in the other direction in the first direction, the third portion facing the input lead with the light emitting element interposed therebetween; a switching element provided on the third portion of the output lead and positioned between the light emitting element and the third portion of the output lead, the switching element having a back surface side electrode connected to the third portion of the output lead, a front surface side electrode positioned on the opposite side of the back surface side electrode and facing the light emitting element, and a control pad provided on the front surface side facing the light emitting element together with the front surface side electrode; a light-receiving element connected to the surface-side electrode of the switching element via an insulating member and positioned between the switching element and the light-emitting element, the light-receiving element having a first bonding pad electrically connected to the control pad of the switching element via a first conductive member and a second bonding pad electrically connected to the surface-side electrode of the switching element via a second conductive member; a first resin member having a portion interposed between the light emitting element and the light receiving element, sealing the light emitting element on the first portion of the input lead, sealing the switching element and the light receiving element on the third portion of the output lead, and transmitting radiated light from the light emitting element toward the light receiving element; A semiconductor device comprising:

2. A second output side lead having a fifth portion and a sixth portion extending from the fifth portion to the other side in the first direction, the second output side lead being aligned with the output side lead; a second switching element connected to a surface side of the fifth portion of the second output lead facing the input lead and electrically connected to the light receiving element; Furthermore, the light receiving element is disposed across the switching element and the second switching element, 2. The semiconductor device according to claim 1, wherein the light receiving element is connected onto the front surface side electrode of the second switching element via another insulating member.

3. the first bonding pad and the second bonding pad of the light receiving element are provided on a surface opposite to a back surface connected to the first switching element and the second switching element, the surface facing the light emitting element; the first bonding pad of the light receiving element is provided at a position overlapping the switching element in a direction perpendicular to a surface on which the front surface electrode of the switching element is provided, 3. The semiconductor device according to claim 2, wherein the second bonding pad of the light receiving element is provided at a position overlapping the second switching element in a direction perpendicular to the surface on which the front-side electrode of the second switching element is provided.

4. the first bonding pad of the light receiving element is electrically connected to the control pad of the switching element via the first conductive member; the control pad of the switching element is electrically connected to the control pad of the second switching element via a third conductive member; the second bonding pad of the light receiving element is electrically connected to a front surface side electrode of the second switching element via the second conductive member; 4. The semiconductor device according to claim 3, wherein the front surface side electrode of the second switching element is electrically connected to the front surface side electrode of the first switching element via a fourth conductive member.

5. 5. The semiconductor device according to claim 4, wherein in a direction perpendicular to the surface of the light receiving element facing the light emitting element, the first conductive member and the second conductive member are arranged at positions that do not intersect with the third conductive member and the fourth conductive member.

6. 3. The semiconductor device according to claim 2, wherein the thickness of the light-receiving element in a direction perpendicular to a surface of the light-receiving element facing the light-emitting element is greater than the thickness of the switching element in said direction.

7. a second resin member that seals the light emitting element on the first portion of the input lead; a third resin member covering the first resin member, the first portion of the input lead, the third portion of the output lead, and the fifth portion of the second output lead; the first resin member covers the light-emitting element via the second resin member; the third resin member is provided to block external light, 7. The semiconductor device according to claim 6, wherein the second portion of the input lead, the fourth portion of the output lead, and the sixth portion of the second output lead each extend from the third resin member.

8. a second resin member that seals the light emitting element on the first portion of the input lead; a third resin member that covers the first resin member, the first portion of the input lead, and the third portion of the output lead; the first resin member covers the light-emitting element via the second resin member; the third resin member is provided to block external light, 6. The semiconductor device according to claim 1, wherein the second portion of the input lead and the fourth portion of the output lead each extend from the third resin member.

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