Cryogenic electrostatic chuck and method of controlling same

Abstract

The cryogenic electrostatic chuck and control method thereof according to preferred embodiments of the present invention are capable of performing cryogenic processes such as cryogenic etching and cryogenic deposition processes on substrates even in the cryogenic temperature range, and can achieve an ideal vertical etch profile when etching a feature with a high aspect ratio.

Description

[Technical Field]

[0001] The present invention relates to a cryogenic electrostatic chuck and a control method thereof, and more particularly to a system for an electrostatic chuck (ESC) used in a semiconductor manufacturing process and a control method thereof.

[0002] This research is related to the research on cryogenic equipment technology for insulator etching process (No. 1415173011), which was conducted under the auspices of Kwangwoon University with support from the Korea Institute for Industrial Technology Assessment and Management and funded by the Ministry of Trade, Industry and Energy in fiscal years 2020-2022. [Background technology]

[0003] Electrostatic chucks (ESCs) are used in semiconductor etch manufacturing equipment to support substrates, such as wafers, and to achieve temperature and temperature uniformity, and to etch features present on the substrates. With the improvement in semiconductor device performance, such as 3D NAND and DRAM, the aspect ratios of features present on substrates in the semiconductor etch manufacturing process are steadily increasing.

[0004] However, conventional electrostatic chucks have been manufactured to be operable mainly in the room temperature range (e.g., 40°C, 60°C, etc.). For example, conventional electrostatic chucks have a coefficient of thermal expansion (CTE) of about 8*10 -6 / ℃ Alumina (Al2O3) or thermal expansion coefficient is about 4*10 -6 / ℃ and the chuck ceramic is made of dielectric material such as aluminum nitride (AlN) and the thermal expansion coefficient is about 24*10 -6The chuck body is made of aluminum (Al) at 1000 K / °C. When conventional electrostatic chucks are operated in the cryogenic temperature range, the expansion / contraction rate of aluminum (Al) is approximately three times faster than that of alumina (Al2O3), which can lead to breakage. Furthermore, conventional electrostatic chucks use devices such as cryogenic chillers to maintain the temperature and temperature uniformity of the substrate and electrostatic chuck at cryogenic temperatures. Even if a manufacturing process (e.g., an etching process) is performed using a device such as a cryogenic chiller to maintain the temperature and temperature uniformity of the substrate and electrostatic chuck at cryogenic temperatures, the substrate must be transferred (or loaded) for the next manufacturing process. In other words, when transferring the substrate, the temperature and temperature uniformity of the substrate and electrostatic chuck must be returned to the room temperature range from the cryogenic temperature range. Consequently, substrate transfer is a factor related to productivity, and temperature control is required at a short distance from the electrostatic chuck, rather than temperature control using a device such as a cryogenic chiller located far from the electrostatic chuck. Furthermore, when etching at a high aspect ratio using an electrostatic chuck at room temperature, problems such as bowing and clogging occur, which deteriorate the etching profile of the object being etched.

[0005] Cryogenic etching technology is currently being developed as a solution to overcome these problems. However, when a conventional electrostatic chuck, which is currently manufactured to operate at room temperature, is operated at the cryogenic temperature range required for cryogenic etching, the conventional electrostatic chuck, which is composed of a chuck ceramic and a chuck body, can be damaged due to the chuck body having a much higher thermal expansion coefficient than the chuck ceramic. For example, problems such as peeling off of the chuck ceramic from the chuck body or damage to the chuck ceramic can occur. Furthermore, to ensure a sound cryogenic etching process for the etched object, there is a need for an electrostatic chuck technology that can maintain and control the cryogenic temperature and temperature uniformity of the substrate. Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a cryogenic electrostatic chuck capable of performing cryogenic processes on a substrate, such as cryogenic etching and cryogenic deposition, even at cryogenic temperatures, and a method for controlling the same.

[0007] Other objects of the present invention that are not explicitly stated can be further considered within the scope that can be easily inferred from the following detailed description and its effects. [Means for solving the problem]

[0008] To achieve the above object, according to a preferred embodiment of the present invention, a cryogenic electrostatic chuck device includes: a substrate holding portion that fixes a substrate by electrostatic force; and a main body portion disposed below the substrate holding portion, the main body portion being made of a metal-based material determined based on the coefficient of thermal expansion (CTE) of the substrate holding portion, the main body portion including a heat conduction control channel whose thermal conductivity is controlled based on the pressure formed by a heat conduction control gas supplied by a control gas supply portion.

[0009] Here, the thermal conduction control channel may include a plurality of thermal conduction control sub-channels, and the thermal conductivity of each of the thermal conduction control sub-channels may be controlled based on a pressure formed by the thermal conduction control gas supplied to the plurality of thermal conduction control sub-channels by the control gas supply unit.

[0010] Here, the heat conduction control channel may include a plurality of heat conduction control sub-channels separated from each other by partition walls, and the heat conduction control gas may be supplied to each of the heat conduction control sub-channels by the control gas supply unit.

[0011] Here, the thermal conduction control channel may include a first thermal conduction control sub-channel and a second thermal conduction control sub-channel isolated from each other by a partition wall, the first thermal conduction control sub-channel being formed in a donut shape, and the second thermal conduction control sub-channel being formed in a circular shape isolated from the first thermal conduction control sub-channel by the partition wall.

[0012] Here, the diameter of the first heat conduction controlling sub-channel may be between 200 mm and 330 mm, the diameter of the second heat conduction controlling sub-channel may be between 150 mm and 250 mm, and the diameter of the partition wall may be between 1 mm and 10 mm.

[0013] Here, the heat conduction control channel may include a plurality of heat conduction control sub-channels having different thicknesses.

[0014] Here, the thermal conduction control channel may include a first thermal conduction control sub-channel and a second thermal conduction control sub-channel isolated from each other by a partition wall, the first thermal conduction control sub-channel may be formed in a donut shape, and the second thermal conduction control sub-channel may have a thickness greater than that of the first thermal conduction control sub-channel and may be formed in a circular shape isolated from the first thermal conduction control sub-channel by the partition wall.

[0015] Here, the heat conduction control channel may include the plurality of heat conduction control sub-channels connected to each other via connecting pipes in the form of orifices.

[0016] Here, the heat conduction control channel may include a first heat conduction control sub-channel disposed on the refrigerant channel, and a second heat conduction control sub-channel extending from an outer end of the first heat conduction control sub-channel toward the refrigerant channel so as to be isolated from the outside of the refrigerant channel.

[0017] Here, the diameter of the substrate holding portion may be the same as or smaller than the diameter of the substrate, and the diameter of the main body portion may be the same as or larger than the diameter of the substrate.

[0018] Here, the device may further include an upper joining portion located between the substrate holding portion and the main body portion and joining the substrate holding portion and the main body portion; and a lower joining portion located below the main body portion and joining the main body portion.

[0019] Here, the metallic material may be a metal matrix composite (MMC) which is one of Al-SiC and Al-Si.

[0020] To achieve the above object, according to a preferred embodiment of the present invention, there is provided a method for controlling a cryogenic electrostatic chuck apparatus including: a substrate holding portion that fixes a substrate by electrostatic force; and a main body portion disposed below the substrate holding portion, the main body portion being made of a metal-based material determined based on the coefficient of thermal expansion (CTE) of the substrate holding portion, and including a heat conduction control channel whose thermal conductivity is controlled based on the pressure formed by a heat conduction control gas supplied by a control gas supply portion. The method includes the steps of measuring the temperature of the substrate holding portion, the temperature uniformity of the substrate holding portion, the temperature on the heat conduction control channel, and the temperature uniformity on the heat conduction control channel; and adjusting the amount and / or pressure of the heat conduction control gas supplied to the heat conduction control channel by the control gas supply portion based on a thermal conductivity vs. pressure graph, a target temperature, and the target temperature uniformity. [Effects of the Invention]

[0021] According to a preferred embodiment of the present invention, a cryogenic electrostatic chuck and a control method thereof can be used to perform cryogenic processes on a substrate, such as a cryogenic etching process and a cryogenic deposition process, even at cryogenic temperatures.

[0022] Furthermore, according to the present invention, when etching a feature with a high aspect ratio, an ideal vertical etch profile can be achieved.

[0023] The effects of the present invention are not limited to the above effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a block diagram illustrating a cryogenic electrostatic chuck according to a preferred embodiment of the present invention; [Figure 2] FIG. 2 is a block diagram for explaining the detailed configuration of the cryogenic electrostatic chuck device shown in FIG. [Figure 3] FIG. 3 is a diagram for explaining a first embodiment of the cryogenic electrostatic chuck device shown in FIG. 2. [Figure 4] 3 is a diagram for explaining a second embodiment of the cryogenic electrostatic chuck device shown in FIG. 2. FIG. [Figure 5] 3 is a diagram for explaining a third embodiment of the cryogenic electrostatic chuck device shown in FIG. 2. FIG. [Figure 6] 2. FIG. 4 is a diagram for explaining a fourth embodiment of the cryogenic electrostatic chuck device shown in FIG. [Figure 7] 2. FIG. 6 is a diagram for explaining a fifth embodiment of the cryogenic electrostatic chuck device shown in FIG. [Figure 8] 2. FIG. 6 is a diagram for explaining a sixth embodiment of the cryogenic electrostatic chuck device shown in FIG. [Figure 9]2. FIG. 6 is a diagram for explaining a seventh embodiment of the cryogenic electrostatic chuck device shown in FIG. [Figure 10] 3 is a diagram for explaining another example of the RF power supply configuration of the cryogenic electrostatic chuck device shown in FIG. 2. FIG. [Figure 11] 3 is a diagram for explaining still another example of the RF power supply configuration of the cryogenic electrostatic chuck device shown in FIG. 2. FIG. [Figure 12] 3 is a diagram for explaining still another example of the RF power supply configuration of the cryogenic electrostatic chuck device shown in FIG. 2. FIG. [Figure 13] 1 is a flowchart illustrating a method for controlling a cryogenic electrostatic chuck device according to a preferred embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, as well as methods for achieving them, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments set forth below, and may be realized in various different forms. However, the present embodiments are provided to fully explain the present invention and to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. The same reference symbols refer to the same elements throughout the specification.

[0026] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in the sense commonly understood by those skilled in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless they are clearly and specifically defined.

[0027] In this specification, terms such as "first" and "second" are used to distinguish one component from another, and should not be used to limit the scope of rights. For example, a first component may be named a second component, and similarly, a second component may be named a first component.

[0028] In this specification, the identification numbers (e.g., a, b, c, etc.) in each step are used for convenience of explanation, and the identification numbers do not describe the order of each step, and each step may occur in a different order from the specified order unless a specific order is clearly stated in the context. That is, each step may be performed in the same order as specified, substantially simultaneously, or in the reverse order.

[0029] In this specification, the terms "have," "can have," "include," or "may include" indicate the presence of a given feature (e.g., a value, a function, an operation, or a component such as a part) and do not exclude the presence of additional features.

[0030] Additionally, the term "module" as used herein refers to software or hardware components such as a field-programmable gate array (FPGA) or an ASIC, and the "module" may perform either function. However, the term "module" is not limited to software or hardware. A "module" may be configured on an addressable storage medium or configured to execute one or more processors. Thus, by way of example, a "module" includes components such as software components, object-oriented software components, class components, and task components, as well as processes, functions, attributes, procedures, subroutines, program code segments, drivers, firmware, microcode, circuits, data structures, and variables. The functionality provided within the components and "modules" may be combined into fewer components and "modules" or separated into additional components and "modules."

[0031] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a cryogenic electrostatic chuck and a control method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

[0032] First, a cryogenic electrostatic chuck according to a preferred embodiment of the present invention will be described with reference to FIG.

[0033] FIG. 1 is a block diagram illustrating a cryogenic electrostatic chuck according to a preferred embodiment of the present invention.

[0034] Referring to FIG. 1, a cryogenic electrostatic chuck 10 according to a preferred embodiment of the present invention relates to an electrostatic chuck capable of performing cryogenic processes on a substrate 200, such as a cryogenic etching process and a cryogenic deposition process, even in the cryogenic temperature range.

[0035] Here, the cryogenic temperature range according to the present invention is -20°C to -150°C, preferably -40°C to -150°C.

[0036] That is, in order to ensure sound electrostatic chuck (ESC) operation (e.g., to prevent electrostatic chuck damage) in the cryogenic temperature range, the cryogenic electrostatic chuck 10 uses a chuck body made of a material having a low thermal expansion coefficient (CTE) close to or slightly different from that of chuck ceramics (e.g., 7*10), rather than aluminum (Al) which is used as the chuck body material of conventional electrostatic chucks. -6 Metallic materials with properties such as (temperature / °C) can be used.

[0037] Furthermore, the cryogenic electrostatic chuck 10 according to the present invention may include a heat conduction adjusting structure made of a metal-based material within the chuck body to maintain and control the temperature and temperature uniformity of the substrate in order to improve productivity (e.g., substrate transfer) and perform a sound cryogenic etching process of a feature to be etched.

[0038] As a result, a cryogenic process (e.g., a cryogenic etching process, a cryogenic deposition process, etc.) can be performed on a substrate 200 in a semiconductor manufacturing process using the cryogenic electrostatic chuck 10 according to the present invention. When a cryogenic etching process is performed using the present invention, an ideal vertical etch profile can be achieved when etching an object with a high aspect ratio.

[0039] To this end, the cryogenic electrostatic chuck 10 may include a cryogenic electrostatic chuck apparatus 100 , a chamber 300 , a plasma supply apparatus 400 , and a process gas supply apparatus 500 .

[0040] The cryogenic electrostatic chuck device 100 uses electrostatic force to fix and support the position of the substrate 200 and can control the temperature and temperature uniformity of the substrate 200 . Here, the diameter of the substrate may be 200 mm, 300 mm, etc., and the substrate may be a wafer, glass, etc.

[0041] In particular, the cryogenic electrostatic chuck device 100 according to the present invention can use a metal-based material having a low thermal expansion coefficient that is close to or only slightly different from the thermal expansion coefficient of the chuck ceramic as the material for the chuck body, in order to ensure sound electrostatic chucking operation in the cryogenic temperature range.

[0042] Furthermore, the cryogenic electrostatic chuck device 100 according to the present invention may include a heat conduction adjusting structure made of a metal-based material within the chuck body so as to maintain and control the temperature and temperature uniformity of the substrate 200 in order to improve productivity and perform a cryogenic etching process on the object to be etched in a healthy manner.

[0043] The chamber 300 isolates the cryogenic electrostatic chuck device 100 from the external environment (e.g., atmospheric pressure environment) and maintains the processing region 600 at a vacuum (e.g., 10 mTorr, 10 -6 It is possible to create an environment such as Torr.

[0044] The chamber 300 may include a pumping connection portion, which is a portion connected to a vacuum system (not shown), and an opening formed in a portion coupled to the plasma supply device 400. The pumping connection portion 310 and the opening coupled to the plasma supply device 400 may have different sizes.

[0045] The vacuum system connected to the pumping connection part 310 may include a high vacuum pump such as a turbo-molecular pump, a low vacuum pump such as a dry pump, and various valves.

[0046] The plasma supply device 400 is coupled to an opening formed in the chamber 300 and may be a reactive ion etch (RIE) device such as a planar capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source in the form of a coil-based antenna, an electron cyclotron resonance (ECR), or the like.

[0047] The processing gas supply unit 500 is coupled to the plasma supply unit 400 and can inject a processing gas or process gas through an inlet in the form of a nozzle or a showerhead.

[0048] In this case, the process gas supply system 500 may be configured with a single zone or multiple zones to uniformly inject the process gas or processing gas into the processing region 600. The process gas supply system 500 may also be configured with a process gas or processing gas supply source such as a gas cylinder or a gas cabinet, an integrated gas system, or the like.

[0049] Next, a cryogenic electrostatic chuck device according to a preferred embodiment of the present invention will be described in more detail with reference to FIG.

[0050] FIG. 2 is a block diagram for explaining the detailed configuration of the cryogenic electrostatic chuck device shown in FIG.

[0051] Referring to FIG. 2, a cryogenic electrostatic chuck device 100 according to a preferred embodiment of the present invention may include a substrate holding portion 110, an upper bonding portion 130, a body portion 140, a lower bonding portion 160, and a control portion (not shown).

[0052] The substrate holding part 110 can fix the substrate 200 by electrostatic force.

[0053] That is, the substrate holding unit 110 can fix the position of the substrate 200 and support the substrate 200 using an electric force, and at the same time, can control the temperature and temperature uniformity of the substrate 200 .

[0054] In this case, the substrate holder 110 may be made of a dielectric material, such as alumina (Al2O3), aluminum nitride (AlN), or the like.

[0055] Here, the electric force can be classified into Coulomb force, Johnsen-Rahbek force, etc. depending on the volume resistivity of the substrate holding part 110 made of a dielectric material. For example, when the volume resistivity is 10 16 Ω·cm or 10 14 When a direct current (DC) or alternating current (AC) power source is applied to the chucking electrode 111 through the chucking power supply 112, the substrate holding unit 110 can fix the position of the substrate 200 and support the substrate 200 by the Coulomb force generated by the voltage drop in the dielectric material. 16 Ω·cm or 10 14 When the resistivity is Ω·cm or more, the surface roughness (Ra) of the surface of the substrate holding part 110 that contacts the substrate 200 is 10 12 Ω·cm or 10 10 The resistivity is smaller than that of Ω·cm (for example, 0.3 μm). 12 Ω·cm or 10 10 When the resistivity is less than Ω·cm, when DC or AC power is applied to the chucking electrode 111 through the chucking power supply 112, the substrate holding unit 110 can fix the position of the substrate 200 and support the substrate 200 by the Johnson-Rahbek force generated by the gap voltage except for the surface of the dielectric material in contact with the substrate 200. 12 Ω·cm or 10 10 When the surface roughness of the surface of the substrate holding part 110 that contacts the substrate 200 is less than Ω·cm, the specific resistance is 10 16 Ω·cm or 1014 On the other hand, when the resistivity is 10 16 Ω·cm or 10 14 Ω cm and 10 12 Ω·cm or 10 10 When the resistivity is between Ω·cm, the force for fixing the position of the substrate 200 and supporting the substrate 200 is a mixture of the Coulomb force and the Johnson-Rahbek force described above.

[0056] In addition, in order to achieve the substrate 200 in the cryogenic temperature range, the substrate holding part 110 is designed to have a resistivity value in the low resistance range (10 12 Ω·cm or 10 10 It may have a resistivity of 0.1 Ω·cm or less.

[0057] Furthermore, the diameter of substrate holding portion 110 may be the same as or smaller than the diameter of substrate 200. Preferably, the diameter of substrate holding portion 110 may be smaller than the diameter of substrate 200. For example, if the diameter of substrate 200 is 300 mm, the diameter of substrate holding portion 110 may be 300 mm or less (e.g., 296 mm to 298 mm).

[0058] The thickness of the substrate holding portion 110 may be 0.3 mm to 10 mm, and preferably 2.5 mm, 5 mm, or the like.

[0059] To this end, the substrate holding portion 110 may include a chucking electrode 111 and a heater electrode 113 .

[0060] The chucking electrode 111 is embedded in the substrate holding part 110 and can be electrically connected to a chucking power supply part 112 including a filter, a DC or AC power supply, and the like.

[0061] Here, the chucking electrode 111 is formed in a specific pattern (for example, a circular or spiral shape) and may be monopolar or bipolar.

[0062] The chucking electrode 111 may also be made of a material determined based on its properties such as thermal expansion coefficient and electrical conductivity in the cryogenic temperature range. The material may be a metal such as tungsten (W) or molybdenum (Mo), or an alloy containing a metal.

[0063] The chucking electrode 111 may be located above the heater electrode 113 .

[0064] The heater electrode 113 is embedded in the substrate holder 110 and can be electrically connected to a heater power supply 114 which is composed of a filter, a DC or AC power supply, and the like.

[0065] Here, the heater electrode 113 is formed in a specific pattern (eg, circular, spiral, etc.) and may be composed of a single region or multiple regions depending on the specific pattern.

[0066] The heater electrode 113 may also be made of a material determined based on its properties such as thermal expansion coefficient and electrical conductivity in the cryogenic temperature range. The material may be a metal such as tungsten (W) or molybdenum (Mo), or an alloy containing a metal.

[0067] The heater electrode 113 may be located below the chucking electrode 111 .

[0068] The substrate gas supply unit 120 is composed of a mass flow meter (MFM), a dump line, etc., and can supply substrate gas under specific conditions (e.g., pressure 50 Torr, leakage < 1 sccm) to the space between the surface of the substrate 200 in contact with the substrate holding unit 110 and the surface of the substrate holding unit 110 in contact with the substrate 200 in order to control the temperature and temperature uniformity of the substrate 200.

[0069] Here, the substrate gas may be helium (He), argon (Ar), nitrogen (N2), or the like, and preferably helium (He).

[0070] In this case, the substrate gas supplied through the substrate gas supply unit 120 may be supplied through gas flow paths present inside the cryogenic electrostatic chuck device 100, such as the substrate holding unit 110 and the main body unit 140. The pattern and number of the gas flow paths may be determined based on the region configuration (single region or multiple regions) inside the substrate holding unit 110.

[0071] The upper joining portion 130 is located between the substrate holding portion 110 and the body portion 140 and can join the substrate holding portion 110 and the body portion 140 to each other.

[0072] That is, the upper joint portion 130 electrically connects the substrate holding portion 110 and the main body portion 140 with low resistance, and can mechanically join the substrate holding portion 110 and the main body portion 140 with each other.

[0073] The upper joint 130 may be composed of a first upper joint 131, a second upper joint 132, and a third upper joint 133. In this case, the first upper joint 131 and the third upper joint 133 of the upper joint 130 may be formed using vacuum brazing, epoxy, etc. Of course, the first upper joint 131 and / or the third upper joint 133 of the upper joint 130 may be formed using the same method as the method for forming the first lower joint 161 of the lower joint 160, which will be described later.

[0074] The first upper joint portion 131 and the third upper joint portion 133 of the upper joint portion 130 may be made of a material such as an Al-based alloy (for example, Al-10Si-1.5Mg, etc.).

[0075] The second upper joint 132 of the upper joint 130 is located between the first upper joint 131 and the third upper joint 133 .

[0076] Here, the second upper joint 132 may be made of a material such as molybdenum (Mo), kovar, zirconium (Zr), tungsten (W), titanium (Ti), niobium (Nb), platinum (Pt), or vanadium (V), like the second lower joint 162 of the lower joint 160 described later.

[0077] Furthermore, the diameter of the second upper joint 132 may be the same as the diameter of the substrate holding portion 110, or may be smaller than the diameter of the substrate holding portion 110, or may be larger than the diameter of the substrate holding portion 110. Preferably, the diameter of the second upper joint 132 may be the same as the diameter of the substrate holding portion 110.

[0078] The thickness of the second upper joint portion 132 may be determined based on economical considerations, and may be, for example, 3 mm, 0.5 mm, 0.05 mm, or the like.

[0079] The body portion 140 may be disposed below the substrate holding portion 110 .

[0080] In this case, the main body 140 may be made of a metal-based material determined based on the coefficient of thermal expansion (CTE) of the substrate holding part 110. The metal-based material may be a metal matrix composite (MMC), such as Al-SiC or Al-Si. The metal composite may be Al-SiC, Al-Si, or the like. For example, in the case of Al-SiC, the thermal expansion coefficient of the metal matrix composite (MMC) generally decreases as the SiC wt% content increases. This means that the thermal expansion coefficient of the main body 140 made of Al-SiC can match the thermal expansion coefficient of the substrate holding part 110 with the SiC wt% content. Generally, the wt% range of SiC is generally in the range of 15% to 85%. In particular, in the case of the main body 140 made of Al-SiC, considering the thermal expansion coefficient matching and thermal conductivity between the substrate holding part 110 and the lower joint part 160 joined by the upper joint part 130, the wt% SiC of Al-SiC may be more appropriate to be 65% to 85% for the sound operation of the cryogenic electrostatic chuck device 100 in the cryogenic temperature range. For example, the thermal expansion coefficient of alumina (Al2O3) is about 7*10 -6 / ℃~8*10 -6 / ℃, when comparing the thermal expansion coefficient matching of Al-70%SiC and Al-20%SiC, Al-70%SiC has a relatively better thermal expansion coefficient matching than Al-20%SiC. The thermal expansion coefficient of Al-70%SiC is about 7*10 -6 / ℃, and the thermal expansion coefficient of Al-20%SiC is about 13*10 -6 / ℃~15*10 -6 / °C. Meanwhile, when the metal composite (MMC) is Al-Si, as with the above-mentioned Al-SiC, the thermal expansion coefficient can be matched to that of the substrate holding part 110 according to the change in wt% Si, and therefore it can be used as the material for the main body 140. Of course, the main body 140 may be made of a material other than the metal composite (MMC), such as a metal such as titanium (Ti) or molybdenum (Mo), or an alloy containing such a metal.

[0081] Also, the main body 140 may be manufactured using a metal composite material (MMC) by using a casting method, an infiltration method, an additive manufacturing process, or the like.

[0082] Here, the diameter of the main body 140 may be the same as or larger than the diameter of the substrate 200. Preferably, the diameter of the main body 140 may be larger than the diameter of the substrate 200. For example, if the diameter of the substrate 200 is 300 mm, the diameter of the main body 140 may be 300 mm or larger (for example, 310 mm to 340 mm).

[0083] For this reason, the main body 140 may include a heat conduction control channel 141 and a coolant channel 143 .

[0084] The heat conduction control channel 141 can control the heat conductivity based on the pressure created by the heat conduction control gas supplied by the control gas supply unit 142 .

[0085] That is, the thermal conduction control channel 141 is embedded in the main body 140 made of a metal composite material (MMC), and may include an internal space in which a thermal conduction control gas is present, supplied from a control gas supply unit 142 consisting of a mass flow meter (MFM), a dump line, etc., in order to control the temperature of the substrate holding unit 110, the temperature uniformity of the substrate holding unit 110, the temperature of the substrate 200, the temperature uniformity of the substrate 200, etc.

[0086] Here, the heat transfer adjusting gas may be helium (He), argon (Ar), nitrogen (N2), etc., and preferably helium (He).

[0087] In addition, the thermal conduction control channel 141 can control the thermal conductivity based on the type of thermal conduction control gas supplied through the control gas supply unit 142, the pressure of the internal space containing the thermal conduction control gas supplied through the control gas supply unit 142 (e.g., 1 mTorr or less, 10 mTorr, 20 mTorr, 500 mTorr, 300 Torr, 760 Torr, etc.), the flow rate of the thermal conduction control gas, etc. As a result, the cryogenic electrostatic chuck device 100 according to the present invention can control the temperature of the substrate holding unit 110, the temperature uniformity of the substrate holding unit 110, the temperature of the substrate 200, the temperature uniformity of the substrate 200, etc.

[0088] Furthermore, the diameter of the heat conduction adjusting channel 141 may be the same as, smaller than, or larger than the diameter of the substrate 200. Preferably, the diameter of the heat conduction adjusting channel 141 may be larger than the diameter of the substrate 200. For example, if the diameter of the substrate 200 is 300 mm, the diameter of the heat conduction adjusting channel 141 may be 300 mm or larger (e.g., 310 mm to 330 mm).

[0089] The thickness of the heat conduction control channel 141 may be 0.2 mm or less, for example, 0.15 mm, 0.1 mm, 0.05 mm, 0.03 mm, or the like.

[0090] Furthermore, the heat conduction control channel 141 may be formed in a specific pattern and may consist of a single region or multiple regions depending on the specific pattern. For example, if the heater electrode 113 is configured in a single region, the heat conduction control channel 141 may also be configured in a single region, and if the heater electrode 113 is configured in multiple regions, the heat conduction control channel 141 may also be configured in multiple regions.

[0091] More specifically, the thermal conduction control channel 141 includes a plurality of thermal conduction control sub-channels, and the thermal conductivity of each thermal conduction control sub-channel can be controlled based on the pressure created by the thermal conduction control gas supplied to the plurality of thermal conduction control sub-channels by the control gas supply unit 142.

[0092] The thermal conduction control channel 141 may include a plurality of thermal conduction control subchannels isolated from each other by a partition wall, and a thermal conduction control gas may be supplied to each of the thermal conduction control subchannels by the control gas supply unit 142. For example, the thermal conduction control channel 141 may include a first thermal conduction control subchannel and a second thermal conduction control subchannel isolated from each other by a partition wall. Here, the first thermal conduction control subchannel may be formed in a donut shape. The second thermal conduction control subchannel may be formed in a circular shape isolated from the first thermal conduction control subchannel by a partition wall. When the diameter of the substrate 200 is 300 mm, the diameter of the first thermal conduction control subchannel may be between 200 mm and 330 mm, the diameter of the second thermal conduction control subchannel may be between 150 mm and 250 mm, and the diameter of the partition wall may be between 1 mm and 10 mm.

[0093] The thermal conduction control channel 141 may also include a plurality of thermal conduction control sub-channels having different thicknesses. For example, the thermal conduction control channel 141 may include a first thermal conduction control sub-channel and a second thermal conduction control sub-channel that are separated from each other by a partition wall. Here, the first thermal conduction control sub-channel may be formed in a donut shape. The second thermal conduction control sub-channel may have a thickness greater than that of the first thermal conduction control sub-channel and may be formed in a circular shape separated from the first thermal conduction control sub-channel by a partition wall.

[0094] The heat conduction control channel 141 may also include a plurality of heat conduction control sub-channels connected to each other via connecting pipes in the form of orifices.

[0095] The heat conduction control channel 141 may also include a first heat conduction control sub-channel disposed on the refrigerant channel 143 and a second heat conduction control sub-channel extending from the outer end of the first heat conduction control sub-channel toward the refrigerant channel 143 so as to be isolated from the outside of the refrigerant channel 143.

[0096] In summary, the heat conduction control channel 141 according to the present invention can be realized in various forms using at least one of the following: "a structure in which the heat conduction control channel 141 is composed of a plurality of heat conduction control sub-channels," "a structure in which the plurality of heat conduction control sub-channels constituting the heat conduction control channel 141 are isolated from each other by partition walls," "a structure in which the plurality of heat conduction control sub-channels constituting the heat conduction control channel 141 have different thicknesses," "a structure in which the plurality of heat conduction control sub-channels constituting the heat conduction control channel 141 are connected to each other through a connecting pipe in the form of an orifice," and "a structure in which the heat conduction control channel 141 surrounds the outside of the refrigerant channel 143." Examples of the heat conduction control channel 141 according to the present invention will be described in detail below.

[0097] Meanwhile, when the thermal conduction control channel 141 according to the present invention includes a plurality of thermal conduction control sub-channels, the chucking electrode 111 embedded in the substrate holding part 110, the heater electrode 113 embedded in the substrate holding part 110, and the coolant channel 143 embedded in the body part 140 may each be configured in plurality to correspond to the plurality of thermal conduction control sub-channels. For example, the chucking electrode 111 may include a plurality of chucking sub-electrodes corresponding to the plurality of thermal conduction control sub-channels constituting the thermal conduction control channel 141, and the chucking power supplier 112 may apply power to each of the chucking sub-electrodes. The heater electrode 113 may include a plurality of heater sub-electrodes corresponding to the plurality of thermal conduction control sub-channels constituting the thermal conduction control channel 141, and the heater power supplier 114 may apply power to each of the heater sub-electrodes. The coolant channel 143 may include a plurality of coolant sub-channels corresponding to the plurality of thermal conduction control sub-channels constituting the thermal conduction control channel 141, and the coolant supplier 144 may supply coolant to each of the coolant sub-channels.

[0098] The coolant channel 143 is embedded in the main body 140 made of a metal composite material (MMC), and may include an internal space through which a coolant flows, supplied via a coolant supply unit 144 configured of a cryogenic chiller, an LN2 dewar, an LN2 circulation supply system, etc., to control the temperature of the substrate holding unit 110, the temperature uniformity of the substrate holding unit 110, the temperature of the substrate 200, the temperature uniformity of the substrate 200, etc. The coolant may be Galden, liquid nitrogen (LN2), etc., and may be supplied to the internal space of the coolant channel 143 via the coolant supply unit 144.

[0099] Here, the coolant channels 143 may be formed in a specific pattern (eg, spiral, serial, parallel, etc.).

[0100] The coolant channel 143 may be located below the heat conduction adjustment channel 141 .

[0101] The lower joint portion 160 is located below the main body portion 140 and is joined to the main body portion 140 .

[0102] That is, the lower joint portion 160 is electrically connected to the main body portion 140 with low resistance, and is mechanically joined to the main body portion 140 .

[0103] The lower joint 160 may be composed of a first lower joint 161 and a second lower joint 162. In this case, the first lower joint 161 of the lower joint 160 may be formed using vacuum brazing, epoxy, etc. Of course, the first lower joint 161 of the lower joint 160 may be formed using the same method as the method for forming the first upper joint 131 and / or the third upper joint 133 of the upper joint 130 described above.

[0104] The first lower joint portion 161 may also be made of a material such as an Al-based alloy (for example, Al-10Si-1.5Mg).

[0105] The second lower joint portion 162 may be disposed below the first lower joint portion 161, and is electrically connected to the main body portion 140 with low resistance by the first lower joint portion 161, and is mechanically joined thereto.

[0106] Here, the second lower bonding portion 162 may be made of a material such as molybdenum (Mo), kovar, zirconium (Zr), tungsten (W), titanium (Ti), niobium (Nb), platinum (Pt), or vanadium (V).

[0107] Furthermore, the diameter of the second lower joint portion 162 may be the same as the diameter of the main body portion 140, or may be smaller than the diameter of the main body portion 140, or may be larger than the diameter of the main body portion 140. Preferably, the diameter of the second lower joint portion 162 may be the same as the diameter of the main body portion 140.

[0108] The thickness of the second lower joining portion 162 may be determined based on economical considerations, and may be, for example, 3 mm, 0.5 mm, 0.05 mm, or the like.

[0109] The RF power supply section 190 and the RF power matching section 180 may be electrically connected to the body section 140 made of metal composite material (MMC).

[0110] That is, the RF power supply unit 190 and the RF power matching unit 180 can generate plasma in the processing region 600 .

[0111] Here, for preferred processing (e.g., etching) of the substrate 200, the RF power supply unit 190 may be configured as two or more units. For example, if there are two RF power supply units 190, the RF power supply unit may be configured as a first RF power supply unit 190-1 that operates at 13.56 MHz or higher (e.g., 27.12 MHz, 40 MHz, 60 MHz, etc.) and a second RF power supply unit 190-2 that operates at less than 13.56 MHz (e.g., 2 MHz, 400 kHz, etc.). If there are multiple RF power supply units 190, the RF power matching units 180 may also be configured as multiple units corresponding to the multiple RF power supply units 190.

[0112] The temperature measurement unit 150 can measure the temperature of the substrate holding unit 110, the temperature uniformity of the substrate holding unit 110, the temperature on the thermal conduction control channel 141 embedded in the main body unit 140, and the temperature uniformity on the thermal conduction control channel 141 embedded in the main body unit 140, thereby measuring the temperature and temperature uniformity of the substrate 200.

[0113] Here, the temperature measurement unit 150 may be configured with a Fluoroptic thermometry or a thermocouple (TC) configured together with a filter, a control module (for example, PID, etc.), or the like.

[0114] Furthermore, when measuring temperature and temperature uniformity using the temperature measuring unit 150, the temperature measuring position may be a single region or multiple regions. The temperature measuring position may be determined based on a single region or multiple regions of the heater electrode 113 embedded in the substrate holding unit 110. The temperature measuring position may also be determined based on a single region or multiple regions of the heat conduction control channel 141 embedded in the main body 140.

[0115] The controller can control the temperature of the substrate 200 and the temperature uniformity of the substrate 200 .

[0116] That is, the control unit can measure the temperature of the substrate holding unit 110, the temperature uniformity of the substrate holding unit 110, the temperature on the heat conduction control channel 141, and the temperature uniformity on the heat conduction control channel 141 using the temperature measurement unit 150.

[0117] The control unit can then adjust the amount and / or pressure of the thermal conduction adjusting gas supplied to the thermal conduction adjusting channel 141 by the adjusting gas supply unit 142 based on the measured temperature information (temperature of the substrate holding unit 110, temperature uniformity of the substrate holding unit 110, temperature on the thermal conduction adjusting channel 141, and temperature uniformity on the thermal conduction adjusting channel 141), the thermal conductivity graph according to pressure, the target temperature, and the target temperature uniformity, thereby controlling the temperature of the substrate 200 and the temperature uniformity of the substrate 200.

[0118] Here, the thermal conductivity graph as a function of pressure indicates the thermal conductivity of the thermal conduction controlling channel 141 that changes according to changes in pressure in the internal space of the thermal conduction controlling channel 141, and can be acquired and stored in advance. For example, the thermal conductivity graph as a function of pressure forms an S-shaped curve in which the thermal conductivity is close to 0 when the pressure is 0 and the thermal conductivity increases as the pressure increases. In this case, the thermal conductivity graph as a function of pressure changes depending on the thickness of the thermal conduction controlling channel 141, and a thinner thickness indicates a higher thermal conductivity at the same pressure.

[0119] In this case, the control unit can additionally control at least one of the heater power supply unit 114 connected to the heater electrode 113, the adjustment gas supply unit 142 connected to the thermal conduction control channel 141, the chucking power supply unit 112 connected to the chucking electrode 111, the substrate gas supply unit 120, the coolant supply unit 144 connected to the coolant channel 143, the RF power supply unit 190, and the RF power matching unit 180 based on the target temperature and the target temperature uniformity in order to control the temperature of the substrate 200 and the temperature uniformity of the substrate 200.

[0120] For the sake of convenience, detailed descriptions of the conventionally known connection between the chucking electrode 111 and the chucking power supply 112, the connection between the heater electrode 113 and the heater power supply 114, the substrate gas flow path within the substrate holding portion 110 and the main body 140 of the substrate gas supplied to the space between the substrate holding portion 110 and the substrate 200 by the substrate gas supply portion 120, the flow path of the coolant within the main body 140, the heat conduction control gas flow path within the main body 140 of the heat conduction control gas supplied to the heat conduction control channel 141 by the control gas supply portion 142, the position and area where the temperature is measured by the temperature measurement portion 150, the vacuum system connected to the pumping connection portion 310 of the chamber 300, the process gas supply source, the lift pin for transferring the substrate 200, the edge ring, the EMI gasket, the O-ring, etc. will be omitted.

[0121] Next, examples of heat conduction adjusting structures according to preferred embodiments of the present invention will be described with reference to FIGS.

[0122] FIG. 3 is a diagram for explaining a first embodiment of the cryogenic electrostatic chuck device shown in FIG.

[0123] 3, the heat conduction adjusting channel 141 according to the first embodiment of the cryogenic electrostatic chuck device 100 according to the present invention may be embedded in the main body 140. The heat conduction adjusting channel 141 can adjust the thermal conductivity based on the pressure formed by the heat conduction adjusting gas supplied by the adjusting gas supply unit 142.

[0124] In this case, the control unit can adjust the amount and / or pressure of the thermal conduction control gas supplied to the thermal conduction control channel 141 by the control gas supply unit 142 based on the measured temperature information (temperature of the substrate holding unit 110, temperature uniformity of the substrate holding unit 110, temperature on the thermal conduction control channel 141, and temperature uniformity on the thermal conduction control channel 141), the thermal conductivity graph according to pressure, the target temperature, and the target temperature uniformity, thereby adjusting the thermal conductivity of the thermal conduction control channel 141, and ultimately controlling the temperature of the substrate 200 and the temperature uniformity of the substrate 200.

[0125] FIG. 4 is a diagram for explaining a second embodiment of the cryogenic electrostatic chuck device shown in FIG.

[0126] Referring to FIG. 4, the heat conduction adjusting channel 141 according to the second embodiment of the cryogenic electrostatic chuck device 100 of the present invention may include a first heat conduction adjusting sub-channel and a second heat conduction adjusting sub-channel isolated from each other by a partition wall.

[0127] Here, the diameter of the substrate 200 is 300 mm, and the diameter of the partition wall may be between 1 mm and 10 mm.

[0128] The first heat conduction control sub-channel may be formed in a doughnut shape, and may have a diameter between 200 mm and 330 mm.

[0129] The second heat conduction controlling sub-channel may be formed in a circular shape separated from the first heat conduction controlling sub-channel by a partition wall, and may have a diameter of 150 mm to 250 mm.

[0130] The thermal conduction control channel 141 can control the thermal conductivity of each of the first and second thermal conduction control sub-channels. The control gas supply unit 142 can control the amount and / or pressure of the thermal conduction control gas supplied to each of the first and second thermal conduction control sub-channels.

[0131] In this case, the control unit can adjust the amount and / or pressure of the thermal conduction control gas supplied to the thermal conduction control channel 141 by the control gas supply unit 142 based on two pieces of temperature information (temperature of the substrate holding unit 110, temperature uniformity of the substrate holding unit 110, temperature on the thermal conduction control channel 141, and temperature uniformity on the thermal conduction control channel 141) measured at positions corresponding to the first thermal conduction control subchannel and the second thermal conduction control subchannel, respectively, based on the thermal conductivity graph according to pressure, the target temperature, and the target temperature uniformity, thereby ultimately controlling the temperature and temperature uniformity of the substrate 200.

[0132] That is, when performing an etching process on the substrate 200, the temperature of the edge region of the substrate 200 is higher than that of the center region of the substrate 200. Therefore, in order to individually control the temperatures and temperature uniformity of the center region and edge region of the substrate 200, as in the present embodiment, the thermal conduction controlling channel 141 is configured with a second thermal conduction controlling sub-channel corresponding to the center region of the substrate 200 and a first thermal conduction controlling sub-channel corresponding to the edge region of the substrate 200, and the thermal conductivity of the first thermal conduction controlling sub-channel and the second thermal conduction controlling sub-channel can be controlled separately.

[0133] FIG. 5 is a diagram for explaining a third embodiment of the cryogenic electrostatic chuck device shown in FIG.

[0134] The heat conduction adjusting channel 141 according to the third embodiment of the cryogenic electrostatic chuck device 100 of the present invention is substantially the same as the heat conduction adjusting channel 141 according to the second embodiment of the cryogenic electrostatic chuck device 100 (see FIG. 4) described above, and therefore only the differences will be described.

[0135] Referring to FIG. 5, the second heat conduction adjusting sub-channel has a thickness greater than the thickness of the first heat conduction adjusting sub-channel.

[0136] Here, the thickness of the first heat conduction adjusting sub-channel may be 0.05 mm.

[0137] The thickness of the second heat conduction adjusting sub-channel may be 0.1 mm.

[0138] FIG. 6 is a diagram for explaining a fourth embodiment of the cryogenic electrostatic chuck device shown in FIG.

[0139] The heat conduction adjusting channel 141 according to the fourth embodiment of the cryogenic electrostatic chuck device 100 of the present invention is substantially the same as the heat conduction adjusting channel 141 according to the third embodiment of the cryogenic electrostatic chuck device 100 (see FIG. 5) described above, and therefore only the differences will be described.

[0140] Referring to FIG. 6, the first heat conduction control sub-channel and the second heat conduction control sub-channel may be connected to each other through a connecting pipe in the form of an orifice.

[0141] Here, the thickness of the orifice-shaped connecting pipe is thinner than the thickness of the first heat conduction control sub-channel.

[0142] That is, in order to generate vortex flows in the first and second thermal conduction control subchannels separately and to adjust the pressures of the first and second thermal conduction control subchannels to be different from each other, the first and second thermal conduction control subchannels may be connected via a connecting pipe in the form of an orifice.

[0143] FIG. 7 is a diagram for explaining a fifth embodiment of the cryogenic electrostatic chuck device shown in FIG.

[0144] The heat conduction adjusting channel 141 according to the fifth embodiment of the cryogenic electrostatic chuck device 100 of the present invention is substantially the same as the heat conduction adjusting channel 141 according to the first embodiment of the cryogenic electrostatic chuck device 100 (see FIG. 3) described above, and therefore only the differences will be described.

[0145] Referring to FIG. 7, the thermal conduction control channel 141 according to this embodiment is not formed in a uniform thickness like the first embodiment shown in FIG. 3, but is formed in a shape in which the thickness of the central region is thicker than the thickness of the edge region.

[0146] That is, the thermal conductivity graph as a function of pressure changes depending on the thickness of the thermal conduction control channel 141, and the thinner the thickness, the higher the thermal conductivity at the same pressure. Taking advantage of this, the thickness of the central region of the thermal conduction control channel 141 corresponding to the central region of the substrate 200 may be formed to be thicker than the thickness of the edge region of the thermal conduction control channel 141 corresponding to the edge region of the substrate 200.

[0147] FIG. 8 is a diagram for explaining a sixth embodiment of the cryogenic electrostatic chuck device shown in FIG.

[0148] The heat conduction adjusting channel 141 according to the sixth embodiment of the cryogenic electrostatic chuck device 100 of the present invention is substantially the same as the heat conduction adjusting channel 141 according to the first embodiment of the cryogenic electrostatic chuck device 100 (see FIG. 3) described above, and therefore only the differences will be described.

[0149] Referring to FIG. 8, the heat conduction control channel 141 according to this embodiment may include a first heat conduction control sub-channel, which is the heat conduction control channel 141 according to the first embodiment shown in FIG. 3, and a second heat conduction control sub-channel extended from the outer end of the first heat conduction control sub-channel.

[0150] Here, the first heat conduction control sub-channel may be disposed above the coolant channel 143 .

[0151] The second heat conduction control sub-channel may extend from an outer end of the first heat conduction control sub-channel toward the refrigerant channel 143 so as to be isolated from the outside of the refrigerant channel 143 .

[0152] An internal partition wall, an orifice-shaped connecting pipe, etc. are formed at a portion where the first thermal conduction control sub-channel and the second thermal conduction control sub-channel are connected to each other, thereby preventing the flow of the thermal conduction control gas between the first thermal conduction control sub-channel and the second thermal conduction control sub-channel.

[0153] In this case, the control gas supply unit 142 may supply the heat conduction control gas to the first heat conduction control sub-channel, but may not supply the heat conduction control gas to the second heat conduction control sub-channel.

[0154] That is, the heat conduction control gas is not supplied to the second heat conduction control subchannel, and the pressure of the second heat conduction control subchannel becomes 0, and therefore the thermal conductivity of the second heat conduction control subchannel becomes close to 0. This allows the outside of the coolant channel 143 to be insulated.

[0155] FIG. 9 is a diagram for explaining a seventh embodiment of the cryogenic electrostatic chuck device shown in FIG.

[0156] The heat conduction adjusting channel 141 according to the seventh embodiment of the cryogenic electrostatic chuck device 100 of the present invention is substantially the same as the heat conduction adjusting channel 141 according to the second embodiment of the cryogenic electrostatic chuck device 100 (see FIG. 4) described above, so only the differences will be described.

[0157] Referring to FIG. 9, the heat conduction control channel 141 according to this embodiment may include a first heat conduction control sub-channel and a second heat conduction control sub-channel that are isolated from each other by a partition wall.

[0158] Here, the first heat conduction adjusting sub-channel and the second heat conduction adjusting sub-channel may be formed in a semicircular shape.

[0159] Next, with reference to FIGS. 10 to 12, examples of RF power supply configurations according to preferred embodiments of the present invention will be described.

[0160] FIG. 10 is a diagram for explaining another example of the RF power supply configuration of the cryogenic electrostatic chuck device shown in FIG. 2 , FIG. 11 is a diagram for explaining yet another example of the RF power supply configuration of the cryogenic electrostatic chuck device shown in FIG. 2 , and FIG. 12 is a diagram for explaining yet another example of the RF power supply configuration of the cryogenic electrostatic chuck device shown in FIG. 2 .

[0161] The RF power supply section 190 and the RF power matching section 180 according to the present invention may be electrically connected to the body section 140 made of metal composite material (MMC).

[0162] That is, the RF power supply section 190 and the RF power matching section 180 according to the present invention may be electrically connected to the main body section 140 as shown in FIG.

[0163] Furthermore, the RF power supply section 190 and the RF power matching section 180 according to the present invention may be electrically connected to the lower junction section 160 as shown in FIG.

[0164] Furthermore, the RF power supply section 190 and the RF power matching section 180 according to the present invention may be electrically connected to the chucking electrode 111 as shown in FIG.

[0165] Furthermore, the RF power supply unit 190 and the RF power matching unit 180 according to the present invention may each be configured with two units, with the second RF power supply unit 190-2 and the second RF power matching unit 180-2 being electrically connected to the main body unit 140, and the first RF power supply unit 190-1 and the first RF power matching unit 180-1 being electrically connected to the plasma supply device 400.

[0166] Next, a method for controlling a cryogenic electrostatic chuck device according to a preferred embodiment of the present invention will be described with reference to FIG.

[0167] FIG. 13 is a flowchart illustrating a method for controlling a cryogenic electrostatic chuck apparatus according to a preferred embodiment of the present invention.

[0168] Referring to FIG. 13, the control unit of the cryogenic electrostatic chuck device 100 according to a preferred embodiment of the present invention can measure the temperature of the substrate holding portion 110, the temperature uniformity of the substrate holding portion 110, the temperature on the heat conduction control channel 141, and the temperature uniformity on the heat conduction control channel 141 (S110).

[0169] The control unit of the cryogenic electrostatic chuck device 100 can adjust the amount and / or pressure of the thermal conduction adjusting gas supplied to the thermal conduction adjusting channel 141 by the adjusting gas supply unit 142 based on the measured temperature information (temperature of the substrate holding unit 110, temperature uniformity of the substrate holding unit 110, temperature on the thermal conduction adjusting channel 141, and temperature uniformity on the thermal conduction adjusting channel 141), the thermal conductivity graph according to pressure, the target temperature, and the target temperature uniformity (S120).

[0170] Here, the thermal conductivity graph as a function of pressure indicates the thermal conductivity of the thermal conduction controlling channel 141, which changes according to the change in pressure in the internal space of the thermal conduction controlling channel 141, and can be acquired and stored in advance. For example, the thermal conductivity graph as a function of pressure is formed in an S-shaped curve, in which the thermal conductivity is close to 0 when the pressure is 0 and the thermal conductivity increases as the pressure increases. In this case, the thermal conductivity graph as a function of pressure changes depending on the thickness of the thermal conduction controlling channel 141, and a thinner thickness indicates a higher thermal conductivity at the same pressure.

[0171] In this case, the control unit can additionally control at least one of the heater power supply unit 114 connected to the heater electrode 113, the adjustment gas supply unit 142 connected to the thermal conduction control channel 141, the chucking power supply unit 112 connected to the chucking electrode 111, the substrate gas supply unit 120, the coolant supply unit 144 connected to the coolant channel 143, the RF power supply unit 190, and the RF power matching unit 180 based on the target temperature and the target temperature uniformity in order to control the temperature of the substrate 200 and the temperature uniformity of the substrate 200.

[0172] Although all of the components constituting the above-described embodiments of the present invention are described as being combined or operating in combination, the present invention is not necessarily limited to such an embodiment. In other words, within the scope of the present invention, one or more of the components may be selectively combined and operated. Furthermore, all of the components may be implemented as individual independent pieces of hardware, or some or all of the components may be selectively combined and implemented as a computer program having program modules that perform some or all of the functions combined in one or more pieces of hardware. Furthermore, such a computer program can be stored on a computer-readable storage medium such as a USB memory, a CD disk, or a flash memory, and can be read and executed by a computer to implement an embodiment of the present invention. Storage media for the computer program may include magnetic storage media, optical storage media, etc.

[0173] The above description merely exemplifies the technical concept of the present invention, and those skilled in the art can make various modifications, changes, and substitutions without departing from the essential characteristics of the present invention. Therefore, the embodiments and accompanying drawings disclosed in the present invention are intended to explain, not limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by such embodiments and accompanying drawings. The scope of protection of the present invention should be interpreted by the claims, and all technical concepts within the equivalent range should be interpreted as being included in the scope of the present invention. [Explanation of symbols]

[0174] 10. Cryogenic electrostatic chuck system 100 ···Cryogenic electrostatic chuck device 110 Circuit board holding section 111 Chucking electrode 112 Chucking power supply unit 113 Heater electrode 114 Heater power supply unit 120 Substrate gas supply unit 130...Top joint 131...1st upper joint 132...Second upper joint 133...Third upper joint 140 Main body 141 Heat conduction control channel 142 Regulating gas supply unit 143 Refrigerant channel 144 Refrigerant supply section 150...Temperature measurement section 160...Lower joint 161...1st lower joint 162...Second lower joint 180 RF power matching section 190 RF power supply 200... Substrate 300 Chamber 310 Pumping connection 400 Plasma supply device 500 Processing gas supply device 600 Processing area

Claims

1. a substrate holding portion that fixes the substrate by electrostatic force; and a main body disposed under the substrate holding portion, the main body being made of a metal-based material determined based on a coefficient of thermal expansion (CTE) of the substrate holding portion, the main body including a heat conduction control channel whose thermal conductivity is controlled based on a pressure created by a heat conduction control gas supplied by a control gas supply unit; Including, the metallic material is Al-SiC, and the wt% SiC of the Al-SiC is 65% to 85%; The heat conduction control channel is The thermal conductivity control device includes a plurality of thermal conduction control sub-channels, and the thermal conductivity of each of the thermal conduction control sub-channels is controlled based on a pressure formed by the thermal conduction control gas supplied to the plurality of thermal conduction control sub-channels by the control gas supply unit; The heat conduction control channel includes the plurality of heat conduction control sub-channels connected to each other via connecting pipes in the form of orifices. Cryogenic electrostatic chuck device.

2. The heat conduction control channel is 2. The cryogenic electrostatic chuck device of claim 1, further comprising: a plurality of heat conduction adjusting sub-channels separated from each other by partition walls; and wherein the heat conduction adjusting gas is supplied to each of the heat conduction adjusting sub-channels by the adjusting gas supply unit.

3. The heat conduction control channel includes a first heat conduction control sub-channel and a second heat conduction control sub-channel isolated from each other by a partition wall, The first heat conduction control sub-channel is formed in a donut shape, 3. The cryogenic electrostatic chuck device of claim 2, wherein the second heat conduction adjusting sub-channel is formed in a circular shape isolated from the first heat conduction adjusting sub-channel by the partition wall.

4. 2. The cryogenic electrostatic chuck device of claim 1, wherein the heat conduction adjusting channel includes a plurality of heat conduction adjusting sub-channels having different thicknesses.

5. The heat conduction control channel includes a first heat conduction control sub-channel and a second heat conduction control sub-channel isolated from each other by a partition wall, The first heat conduction control sub-channel is formed in a donut shape, 5. The cryogenic electrostatic chuck device of claim 4, wherein the second thermal conduction adjusting sub-channel has a thickness greater than a thickness of the first thermal conduction adjusting sub-channel, and is formed in a circular shape isolated from the first thermal conduction adjusting sub-channel by the partition wall inside the first thermal conduction adjusting sub-channel.

6. the diameter of the substrate holding portion is equal to or smaller than the diameter of the substrate; The cryogenic electrostatic chuck device of claim 1 , wherein the diameter of the main body is the same as or larger than the diameter of the substrate.

7. an upper joining portion located between the substrate holding portion and the main body portion and joining the substrate holding portion and the main body portion; and a lower joint portion located below the main body portion and joined to the main body portion; 10. The cryogenic electrostatic chuck apparatus of claim 1, further comprising:

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