Substrate processing apparatus and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method, and the substrate processing apparatus and the substrate processing method according to the present invention have an advantage that in a substrate processing apparatus in which the inside of a chamber is separated into a first space and a second space, a process gas is sequentially sprayed onto substrates positioned in the first space and the second space, respectively, thereby forming thin films of uniform thickness on the substrates positioned in the first space and the second space, respectively.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to a substrate processing apparatus and a substrate processing method in which a chamber is separated into a first space and a second space, and which can form a thin film of a uniform thickness by sequentially injecting a process gas onto substrates positioned in the first space and the second space. [Background technology]

[0002] Generally, manufacturing semiconductor devices involves a thin film deposition process in which raw materials are deposited on a silicon wafer, a photolithography process in which selected areas of the thin film are exposed or hidden using a photosensitive material, and an etching process in which selected areas of the thin film are removed and patterned as desired. These processes are carried out in chambers designed to provide the optimum environment for each process.

[0003] There are various thin film deposition methods for forming predetermined thin films on silicon wafers, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), which are used in various fields for semiconductor manufacturing. In recent years, as design rules for semiconductor devices have rapidly become more refined, there has been a demand for thin films with fine patterns. As a result, the use of atomic layer deposition (ALD), which can form fine patterns with extremely uniform atomic layer thickness, has been increasing.

[0004] The chemical vapor deposition (CVD) method involves simultaneously injecting multiple gas molecules into a process chamber and depositing the reaction products generated on the top surface of a substrate onto the substrate. In contrast, the atomic layer deposition (ALD) method involves injecting one gaseous substance into a process chamber, purging it, and leaving only the gas physically adsorbed on the top surface of the heated substrate. Then, another gaseous substance is injected, depositing the chemical reaction products generated only on the top surface of the substrate.

[0005] Among these, ALD thin film deposition is gaining attention as an essential deposition technology for nano-level semiconductor device manufacturing because it enables the deposition of nano-thick thin films with excellent uniformity. In particular, ALD thin film deposition equipment can precisely control the thickness of thin films to the order of a few angstroms. Therefore, ALD thin film deposition equipment has the advantages of excellent step coverage, enabling uniform deposition of complex three-dimensional structures, precise control of thin film thickness and composition, and deposition of large areas at a uniform rate.

[0006] A substrate processing apparatus to which a conventional atomic layer deposition (ALD) method is applied includes a substrate support for supporting a substrate, and a gas injection unit disposed above the substrate support for injecting a process gas.

[0007] At this time, a source gas is injected onto the upper surface of the substrate mounted on the substrate support through the gas injection unit, and then a purge gas is injected to purge the upper surface of the substrate. Subsequently, a reaction gas is injected onto the upper surface of the substrate, and then a purge gas is injected to purge the upper surface of the substrate again. This process is repeated to form a uniform thin film on the upper surface of the substrate.

[0008] However, in the conventional atomic layer deposition method, a source gas and a reaction gas are sequentially injected onto a single substrate in a chamber to deposit a thin film, which reduces productivity.

[0009] Meanwhile, even when processing multiple substrates, thin film deposition is performed on the substrates positioned in the first and second spaces while they are fixed, but there is a problem in that the uniformity of the thin film deposited on the multiple substrates positioned in the first and second spaces varies due to structural problems within the chamber or the influence of heater terminals formed on the substrate support. Summary of the Invention [Problem to be solved by the invention]

[0010] The present invention has been made to solve these problems, and aims to provide a substrate processing apparatus and method in which, in a substrate processing chamber having a first space and a second space separated therein, a process gas is sprayed onto a first substrate and a second substrate positioned in the first space and the second space, respectively, which do not overlap each other, to independently form a thin film in the first space and the second space. After forming a thin film of a predetermined thickness, a susceptor supporting the plurality of substrates is rotated by a predetermined angle to change the positions of the first substrate and the second substrate, and the process gas is sprayed again to form a thin film of a predetermined thickness. This process is repeated, thereby minimizing the influence of the positions in the first space and the second space and forming a thin film of a uniform thickness. [Means for solving the problem]

[0011] A substrate processing apparatus according to the present invention includes a chamber including a first space and a second space that does not overlap with the first space; a rotatable susceptor disposed within the chamber across the first space and the second space, supporting at least one substrate in the first space and at least one substrate in the second space; a first injection unit facing the susceptor in the first space and injecting at least two different gases into the first space; and a second injection unit facing the susceptor in the second space and injecting at least two different gases into the second space, wherein the first injection unit and the second injection unit include a first gas injection passage that injects a first gas and a second gas injection passage that injects a second gas different from the first gas.

[0012] A substrate processing method according to the present invention is a substrate processing method for processing a substrate using a substrate processing apparatus including: a chamber including a first space and a second space not overlapping the first space; a rotatable susceptor disposed within the chamber across the first space and the second space, the susceptor supporting at least one substrate in the first space and at least one substrate in the second space; a first injection unit facing the susceptor in the first space and injecting at least two or more different gases into the first space; and a second injection unit facing the susceptor in the second space and injecting at least two or more different gases into the second space, a first thin film forming step of sequentially injecting a source gas and a reaction gas from the first injection unit and the second injection unit toward the first substrate and the second substrate, respectively, and repeating this at least once; a first susceptor rotating step of rotating the susceptor by a predetermined angle, moving the first substrate to below the second injection unit, and moving the second substrate to below the first injection unit; and a second thin film forming step of alternately injecting a source gas and a reaction gas from the first injection unit and the second injection unit toward the second substrate and the first substrate, respectively, and repeating this at least once.

[0013] A substrate processing method according to the present invention provides a substrate processing apparatus including: a chamber including a first space and a second space not overlapping the first space; a rotatable susceptor disposed within the chamber across the first space and the second space, supporting at least one substrate in the first space and supporting at least one substrate in the second space; a first injection unit facing the susceptor in the first space and injecting at least two or more different gases into the first space; and a second injection unit facing the susceptor in the second space and injecting at least two or more different gases into the second space. a thin film forming step of sequentially injecting a source gas and a reaction gas from the first injector and the second injector toward the first substrate and the second substrate, respectively, and repeating this at least once, wherein the thin film forming step further includes the steps of injecting the source gas through a first gas injection passage and injecting the reaction gas through a second gas injection passage having a path different from that of the first gas injection passage. [Effects of the Invention]

[0014] According to the substrate processing apparatus and method of the present invention, the substrate processing step is subdivided, and a first gas and a second gas are sequentially sprayed onto the top of the substrates placed in the first space and the second space, respectively, to form a thin film of a predetermined thickness. Then, the susceptor is rotated, and the first gas and the second gas are sequentially sprayed onto the top of the substrates placed in the first space and the second space again, to form a thin film of a predetermined thickness. This advantageously improves the uniformity of the thin films deposited on the multiple substrates placed in the first space and the second space. [Brief explanation of the drawings]

[0015] [Figure 1] 2 is a diagram for explaining a planar structure within a chamber of the substrate processing apparatus according to the present invention; FIG. [Figure 2a]2 is a cross-sectional view showing a simplified cross section of the chamber taken along the line BB in FIG. 1. [Figure 2b] FIG. 2b is a partially enlarged cross-sectional view of part C of FIG. 2a. [Figure 2c] FIG. 2b is a partially enlarged cross-sectional view of part D in FIG. 2a. [Figure 3a] 3 is a diagram illustrating a planar structure of a lower portion of a susceptor of the substrate processing apparatus according to the present invention; FIG. [Figure 3b] 3 is a diagram illustrating a planar structure of a lower portion of a susceptor of the substrate processing apparatus according to the present invention; FIG. [Figure 4] 1 is a process flowchart of a substrate processing method according to an embodiment of the present invention. [Figure 5] 10 is a flowchart illustrating a process of a substrate processing method according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0016] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily understand the present invention. Among the reference numerals shown in the various drawings, the same reference numerals indicate the same elements.

[0017] In describing the present invention, if it is determined that a detailed description of related publicly known technology may obscure the gist of the present invention, the detailed description will be omitted.

[0018] Terms such as first and second may be used to describe various components, but the components are not limited by the terms, and the terms are used only to distinguish one component from another.

[0019] Fig. 1 is a diagram for explaining the planar structure within a chamber of a substrate processing apparatus according to the present invention, and Fig. 2a is a cross-sectional view simply showing the chamber cross section at part BB in Fig. 1. Fig. 2b is a partially enlarged cross-sectional view of part C in Fig. 2a, and Fig. 2c is a partially enlarged cross-sectional view of part D in Fig. 2a.

[0020] A substrate processing apparatus according to the present invention will be described below with reference to FIGS. 1 and 2a to 2c.

[0021] The substrate processing apparatus (1000) according to the present invention includes a chamber (1100), a chamber lead (1200), a susceptor (1300), and a gas injection unit (1400).

[0022] The chamber 1100 is a region where actual processes such as thin film deposition and etching are performed on a substrate, and can form a closed reaction space by connecting to a chamber lead 1200. In this case, the reaction space can include a first space A1, a second space A2, and a third space A3, which is a purge space separating the first space A1 and the second space A2.

[0023] The susceptor 1300 is disposed across the first space A1 and the second space A2 within the chamber 1100, supporting at least one substrate W1 in the first space A1 and at least one substrate W2 in the second space A2. The susceptor 1300 can rotate horizontally clockwise or counterclockwise at a predetermined period, direction, and angle around a lower rotation axis 1310 for processing.

[0024] The susceptor 1300 can load a plurality of substrates W1, W2 at positions spaced apart at a predetermined angle. The spacing between the positions at which the substrates W1, W2 are loaded can be determined in consideration of the spacing between the first, second, and third sprayers 1410, 1420, and 1430, which will be described later. Exemplarily, the spacing between the positions at which the substrates W1, W2 are loaded can be determined to be the same as the spacing between the first, second, and third sprayers 1410, 1420, and 1430.

[0025] The third injection unit 1430 is disposed above the susceptor 1300 and faces the center of rotation of the susceptor 1300. The third injection unit 1430 injects purge gas to form a third space A3 that divides the interior of the chamber 1100 into a first space A1 and a second space A2.

[0026] Meanwhile, a first injection part 1410 is formed in an upper portion of the first space A1 inside the chamber 1100, facing the susceptor 1300, and injecting at least two different gases into the first space A1. Also, a second injection part 1420 is formed in an upper portion of the second space A2 inside the chamber 1100, facing the susceptor 1300, and injecting at least two different gases into the second space A2.

[0027] The first injector 1410 includes a first gas injection passage 1410a for injecting a first gas into the first space A1 and a second gas injection passage 1410b for injecting a second gas different from the first gas. The first injector 1410 alternately injects the first gas and the second gas into the first space A1 through the first gas injection passage 1410a and the second gas injection passage 1410b to form a thin film on a substrate located in the first space A1. At this time, the first gas or the second gas may be injected in a plasma state toward the substrate.

[0028] When the first gas is plasma-treated and then sprayed, the inactive first gas can be activated to generate a large amount of radicals and ions, which allows the first gas to be decomposed even at low temperatures and effectively removes impurities contained in the first gas itself.On the other hand, when the second gas is plasma-treated and then sprayed, the density of the thin film can be improved, thereby improving the uniformity of the thin film.

[0029] Meanwhile, the plasma can be realized by direct plasma depending on the electrode structure, or by remote plasma generated by applying RF to the space where the first gas remains.

[0030] The first injector 1410 may inject a purge gas after injecting the first gas or after injecting the second gas. The first injector 1410 may inject a first purge gas between the injection of the first and second gases, and may inject a second purge gas between the injection of the second and first gases. At least one of the first and second purge gases may be injected in a plasma state toward the substrate. Injecting the first and second purge gases through plasma treatment has the advantage of selectively depositing the top, bottom, and sidewalls of a pattern formed on a thin film. In addition, injecting the purge gas through plasma treatment onto a thin film has the advantage of removing hydrogen contained in the thin film surface and modifying the thin film surface, thereby forming a thin film with high selectivity.

[0031] The first injector (1410) may include an electrode (1411) for injecting the first gas, the second gas, the first purge gas, or the second purge gas into a plasma state toward the substrate.

[0032] The electrode (1411) may include a first electrode (1411a) having a plurality of protruding electrodes (1411a1) formed thereon, and a second electrode (1411b) having openings formed at positions corresponding to the protruding electrodes and into which the protruding electrodes are inserted.

[0033] An RF power supply (1413a, 1413b) may apply RF power to at least one of the first electrode (1411a) or the second electrode (1411b) so as to generate plasma between the side of the protruding electrode and the inner surface of the opening of the second electrode (1411b).

[0034] The first gas is injected through the first gas injection passage (1410a) extending to the protruding electrode, and the second gas is injected through the second gas injection passage (1410b) between the side of the protruding electrode and the inner surface of the opening of the second electrode.

[0035] The second injection unit (1420) includes a first gas injection passage for injecting a first gas into the second space (A2) and a second gas injection passage for injecting a second gas different from the first gas. The second injection unit (1420) alternately injects the first gas and the second gas into the second space (A2) through the first gas injection passage and the second gas injection passage to form a thin film on a substrate located in the second space (A2). At this time, the first gas or the second gas may be injected toward the substrate in a plasma state. The detailed configuration of the second injection unit (1420) is the same as the detailed configuration of the first injection unit (1410).

[0036] The second injector 1420 may inject a purge gas after injecting the first gas or after injecting the second gas. The second injector 1420 may inject a first purge gas between the injection of the first gas and the second gas, and may inject a second purge gas between the injection of the second gas and the injection of the first gas. At this time, at least one of the first purge gas and the second purge gas may be injected in a plasma state toward the substrate.

[0037] The second injector (1420) may include an electrode for injecting the first gas, the second gas, the first purge gas, or the second purge gas toward the substrate in a plasma state.

[0038] The electrode may include a first electrode having a plurality of protruding electrodes formed thereon, and a second electrode having openings formed at positions corresponding to the protruding electrodes, into which the protruding electrodes are inserted.

[0039] An RF power source may be applied to at least one of the first electrode and the second electrode so as to generate plasma between a side surface of the protruding electrode and an inner surface of the opening of the second electrode.

[0040] The first gas is injected through the first gas injection passage extending to the protruding electrode, and the second gas is injected through a second gas injection passage between a side surface of the protruding electrode and an inner surface of an opening of the second electrode.

[0041] In the present invention, the first gas is described as a source gas and the second gas is described as a reaction gas, but this is not limited thereto, and the first gas may be a reaction gas and the second gas may be a source gas.

[0042] When the first gas or the second gas is injected from the first injection part (1410) or the second injection part (1420), the susceptor (130) may be stopped.

[0043] Meanwhile, the chamber (1100) may further include a third space (A3) between the first space (A1) and the second space (A2). The third space (A3) may include a third injector (1430) for injecting a third purge gas toward the susceptor. In this case, the third purge gas may be injected in a plasma state toward the substrate.

[0044] The third injector (1430) may include an electrode (1431) for injecting the third purge gas into a plasma state toward the substrate.

[0045] The electrode (1431) may include a third electrode (1431a) having a plurality of protruding electrodes (1431a1) formed thereon, and a fourth electrode (1431b) having openings formed at positions corresponding to the protruding electrodes and into which the protruding electrodes are inserted.

[0046] An RF power supply unit (1433a, 1433b) may apply RF power to at least one of the third electrode (1431a) or the fourth electrode (1431b) so as to generate plasma between the side of the protruding electrode and the inner surface of the opening of the fourth electrode (1431b).

[0047] Meanwhile, the thin film formed on the substrate can be plasma-treated through the first spray unit 1410 and the second spray unit 1420. When plasma is treated on the thin film in this manner, the electrical and optical properties of the deposited thin film can be improved, and the surface modification properties of the deposited thin film can be improved to be hydrophobic or hydrophilic, thereby improving the uniformity of the thin film as a whole.

[0048] 3a and 3b are diagrams for explaining the arrangement of heaters inside a susceptor of a substrate processing apparatus according to the present invention.

[0049] FIG. 3a is a diagram for explaining the arrangement structure of heaters inside a susceptor of a substrate processing apparatus according to the present invention, and FIG. 3b is a diagram of the susceptor of the substrate processing apparatus according to the present invention after being rotated 180 degrees.

[0050] 3a and 3b, the substrate processing apparatus (1000) according to the present invention may further include a heater (1500) for heating the substrate below the susceptor (1300). The heater (1500) may include a plurality of heater elements (1510-1550) each made of a thin, tubular wire. The heater elements (1510-1550) may form a concentric pattern and include a plurality of power terminals (1510a-1550a) connected to an external power source (not shown).

[0051] Generally, the heater may have a heater member and a power terminal portion arranged concentrically and symmetrically in the first and second spaces. However, if the heater member and the power terminal portion are arranged symmetrically in the first and second spaces, even if a substrate positioned in the first space is moved to the second space due to rotation of the susceptor, the power terminal portion may be arranged in the same region, which may result in variations in the uniformity of the thin films deposited on the substrates positioned in the first and second spaces.

[0052] In the substrate processing apparatus according to the present invention, a number of heater members (151-155) and power terminal portions (1510a-1550a) can be arranged asymmetrically between the first space (A1) and the second space (A2). Alternatively, the pattern of the heater members arranged in the first space may be different from the pattern of the heater members arranged in the second space. As a result, the temperature distribution of the substrate positioned in the first space may differ from the temperature distribution of the substrate when the substrate positioned in the first space is positioned in the second space due to the rotation of the susceptor.

[0053] Therefore, the substrate processing apparatus according to the present invention can prevent the uniformity of the thin film deposited on the substrate from becoming uneven due to the asymmetrical arrangement of the heater element and the power terminal portion or the different pattern of the heater element when the substrate is positioned in the first space and when it is positioned in the second space.

[0054] FIG. 4 is a process flowchart of a substrate processing method according to an embodiment of the present invention.

[0055] Referring to FIG. 4, a substrate processing method according to the present invention includes a chamber including a first space and a second space not overlapping the first space, a rotatable susceptor supporting at least one substrate in the first space and the second space, a first injection unit facing the susceptor to inject gas into the first space, and a second injection unit facing the susceptor to inject gas into the first space. 2 A substrate processing method for processing a substrate using a substrate processing apparatus including a second injection unit that injects gas into a space includes a substrate placement step (S410), a first thin film formation step (S420), a first susceptor rotation step (S430), and a second thin film formation step (S440).

[0056] In the substrate placement step (S410), at least one first substrate and at least one second substrate are placed below a first injection unit facing the susceptor arranged across the first space and the second space inside the chamber and injecting at least two or more different gases into the first space, and a second injection unit facing the susceptor and injecting at least two or more different gases into the first space.

[0057] In the first thin film forming step (S420), a source gas and a reaction gas are sequentially injected from the first injection part and the second injection part toward the first substrate and the second substrate, respectively, and this is repeated at least once to form a thin film of a predetermined thickness.

[0058] In the first susceptor rotating step (S430), the susceptor is rotated at a predetermined angle, the first substrate is moved to a position below the second jetting unit, and the second substrate is moved to a position below the first jetting unit.

[0059] Next, in the second thin film formation step (S440), the source gas and the reaction gas are alternately injected from the first injection part and the second injection part toward the second substrate and the first substrate, respectively, and this is repeated at least once to form a thin film of a predetermined thickness.

[0060] In the first thin film forming step (S420) and the second thin film forming step (S440), when the source gas and the reaction gas are alternately injected to form a thin film, the source gas or the reaction gas may be injected in a plasma state toward the substrate.

[0061] When a source gas is plasma-treated and then injected, it is possible to activate an inactive source gas to generate a large amount of radicals and ions, which has the advantages of enabling the source gas to be decomposed even at low temperatures and effectively removing impurities contained in the source gas itself.On the other hand, when a reactive gas is plasma-treated and then injected, it is possible to improve the density of the thin film, thereby improving the quality of the thin film.

[0062] Meanwhile, the plasma can be realized by direct plasma depending on the electrode structure, or by remote plasma generated by applying RF to a space where a source gas remains.

[0063] In the first thin film forming step (S420) and the second thin film forming step (S440), the susceptor may be stopped when the source gas or the reaction gas is injected.

[0064] Meanwhile, after the second thin film forming step (S440), the method may further include a second susceptor rotation step (S450) of rotating the susceptor by a predetermined angle, moving the first substrate to a position below the first injection unit, and moving the second substrate to a position below the second injection unit.

[0065] In the substrate processing method according to the present invention, a thin film of a predetermined thickness is formed by alternately repeating a first thin film forming step (S420), a first susceptor rotating step (S430), a second thin film forming step (S440), and a second susceptor rotating step (S450). After that, it is confirmed (S460) whether a thin film of a desired thickness has been formed, and then the first thin film forming step (S420), the first susceptor rotating step (S430), the second thin film forming step (S440), and the second susceptor rotating step (S450) are repeated until a thin film of the desired thickness is formed.

[0066] In the first thin film forming step (S420) and the second thin film forming step (S440), the susceptor may be stopped when the source gas or the reaction gas is injected.

[0067] In the first thin film forming step (S420) and the second thin film forming step (S440), a purge gas may be injected between the source gas and the reaction gas or between the reaction gas and the source gas.

[0068] The purge gas may include a first purge gas injected between the injection of the source gas and the reaction gas, and a second purge gas injected between the injection of the reaction gas and the source gas. At least one of the first purge gas and the second purge gas may be injected in a plasma state toward the substrate. Injecting the first purge gas and the second purge gas through a plasma treatment has the advantage of selectively depositing the top, bottom, and sidewalls of a pattern formed on a thin film. Injecting the purge gas through a plasma treatment on a thin film has the advantage of removing hydrogen contained in the thin film surface to modify the thin film surface, thereby forming a thin film with high selectivity.

[0069] Furthermore, in addition to at least one of the first purge gas and the second purge gas, the source gas or the reaction gas may also be injected in a plasma state toward the substrate.

[0070] Meanwhile, the chamber (1100) of the substrate processing apparatus may further include a third space (A3) between the first space (A1) and the second space (A2). The third space (A3) may include a third injector (1430) that injects a third purge gas toward the susceptor. The third injector (1430) injects a third purge gas toward the susceptor in the first susceptor rotation step (S430) and the second susceptor rotation step (S450). At this time, the third purge gas may be injected in a plasma state toward the substrate. Thereafter, a plasma treatment may be performed on the thin film formed on the substrate.

[0071] Meanwhile, the third injection unit (1430) can inject a third purge gas toward the susceptor when the source gas or the reaction gas is injected in the first thin film formation step (S420) and the second thin film formation step (S440), and then perform plasma processing on the thin film formed on the substrate.

[0072] The third injector (1430) may inject a third purge gas toward the susceptor when the source gas or the reaction gas is injected in the first thin film formation step (S420) and the second thin film formation step (S440), and at this time, the third purge gas may be injected in a plasma state toward the substrate.

[0073] According to the substrate processing method of the present invention, a thin film formed on a substrate may be subjected to a plasma treatment. When the thin film is subjected to the plasma treatment, the electrical and optical properties of the deposited thin film may be improved, and the hydrophobic or hydrophilic surface modification properties may be improved, thereby improving the uniformity of the thin film as a whole.

[0074] FIG. 5 is a process flowchart of a substrate processing method according to another embodiment of the present invention.

[0075] Referring to FIG. 5, a substrate processing method according to the present invention includes a chamber including a first space and a second space not overlapping the first space, a rotatable susceptor supporting at least one substrate in the first space and the second space, a first injection unit facing the susceptor to inject a gas into the first space, and a second injection unit facing the susceptor to inject a gas into the first space. 2 A substrate processing method for processing a substrate using a substrate processing apparatus including a second injector for injecting gas into a space includes a substrate placement step (S510) and a thin film formation step (S520).

[0076] In the substrate placement step (S510), at least one first substrate and at least one second substrate are placed below a first injection unit facing the susceptor arranged across the first space and the second space inside the chamber and injecting at least two or more different gases into the first space, and a second injection unit facing the susceptor and injecting at least two or more different gases into the first space.

[0077] In the thin film forming step (S520), the source gas and the reaction gas are sequentially injected from the first injection part and the second injection part toward the first substrate and the second substrate, respectively, and this is repeated at least once to form a thin film of a predetermined thickness.

[0078] In this case, the thin film forming step (S520) may further include the steps of injecting the source gas through a first gas injection passage and injecting the reaction gas through a second gas injection passage having a path different from that of the first gas injection passage.

[0079] In the step of injecting the source gas, the source gas may be injected through the first gas injection passage formed in the protruding electrode of the first electrode, and in the step of injecting the reaction gas, the reaction gas may be injected through the second gas injection passage between the inner surface of the opening of the second electrode, the opening being formed at a position corresponding to the protruding electrode, and the side of the protruding electrode.

[0080] When the space within the chamber (1100) is divided into two spaces, a first space (A1) and a second space (A2), with a third space (A3) as the boundary, it is preferable to rotate the susceptor (1300) 180 degrees in the first susceptor rotation step (S430). However, the rotation angle of the susceptor can be variously realized, such as 90 degrees, 180 degrees, and 270 degrees, depending on the number of separated spaces and process conditions.

[0081] In this way, the first thin film and the second thin film are sequentially formed on the first substrate (W1), and the second thin film and the first thin film are sequentially formed on the second substrate (W2), thereby improving the uniformity of the thin films deposited on the multiple substrates.

[0082] If the susceptor is rotated in only the same direction in the first susceptor rotation step (S430) and the second susceptor rotation step (S450), there will be a difference in the time that the substrate adjacent to the purge gas injection part is exposed to the purge gas injection part during the rotation of the susceptor between the substrate adjacent to the purge gas injection part and the substrate not adjacent to the purge gas injection part.

[0083] That is, when the rotation direction of the susceptor is fixed in one direction, substrates adjacent to the purge gas injection unit relative to the rotation direction of the susceptor always pass through the purge gas injection unit earlier than substrates not adjacent to the purge gas injection unit. Therefore, substrates not adjacent to the purge gas injection unit relative to the rotation direction of the susceptor are exposed to the first or second space where the thin film is formed for a longer period of time before passing through the purge region where the purge gas is injected, compared to substrates adjacent to the purge gas injection unit. For this reason, the uniformity of the thin film deposited on multiple substrates may be reduced.

[0084] Therefore, if the susceptor is rotated in one direction in the first susceptor rotation step (S430), it is preferable to alternately rotate the susceptor in the other direction in the second susceptor rotation step (S450). Meanwhile, when thin films are to be formed on the plurality of substrates a predetermined number of times (N times), the uniformity of the thin films deposited on the plurality of substrates can be improved by rotating the susceptor in one direction N / 2 times and then in the other direction N / 2 times.

[0085] Generally, the reaction space inside the chamber is formed asymmetrically, and as discussed above, heaters for heating the substrate are arranged concentrically below the susceptor, with power supply terminals formed in various locations.

[0086] As such, the uniformity of the thin film deposited on the substrates located in the first space (A1) and the second space (A2) varies due to structural issues within the chamber and the influence of the power terminals of the heater formed under the susceptor.

[0087] Therefore, the present invention minimizes the structural problems inside the chamber and the influence of the power terminals, thereby improving the uniformity of the thin film deposited on the substrates located in the first space (A1) and the second space (A2).

[0088] As discussed above, the substrate processing method according to the present invention has the advantage of improving the uniformity of the thin films deposited on the first substrate (W1) and the second substrate (W2) by forming first and second thin films of predetermined thicknesses on the substrates (W1, W2) located in the first space (A1) and the second space (A2), respectively.

[0089] The present invention has been described with reference to the embodiments shown in the drawings, but these are merely illustrative, and those skilled in the art will recognize that various modifications and equivalent embodiments are possible. Therefore, the true technical scope of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. a chamber including therein a first space, a second space not overlapping with the first space, and a third space between the first space and the second space; a rotatable susceptor disposed within the chamber across the first space and the second space, the susceptor supporting at least one substrate in the first space and at least one substrate in the second space; a first injection unit facing the susceptor in the first space and injecting at least two different gases into the first space; a second injection unit facing the susceptor in the second space and injecting at least two different gases into the second space; Including, The first injection unit and the second injection unit are a first gas injection flow path for injecting a first gas; a second gas injection passage for injecting a second gas different from the first gas; Including, The first injection unit and the second injection unit are the first substrate on which a first thin film has been formed is rotated and moved to a position below the second injection unit by sequentially injecting the first gas and the second gas from the first injection unit toward the first substrate supported by the susceptor, and the second gas is sequentially injected from the second injection unit toward the first substrate on which the first thin film has been formed, thereby forming a second thin film on the first thin film formed on the first substrate; a second substrate supported by the susceptor, the second substrate having a first thin film formed thereon is rotated and moved to a position below the first injection unit by sequentially injecting the first gas and the second gas from the second injection unit toward the second substrate supported by the susceptor, and the first gas and the second gas are sequentially injected from the first injection unit toward the second substrate having the first thin film formed thereon, thereby forming a second thin film on the first thin film formed on the second substrate.

2. 2. The substrate processing apparatus according to claim 1, wherein the susceptor is stopped when the first gas or the second gas is injected.

3. 2. The substrate processing apparatus of claim 1, wherein a purge gas is injected through either the first injector or the second injector after the first gas is injected or the second gas is injected.

4. 2. The substrate processing apparatus according to claim 1, wherein the first gas or the second gas is injected in a plasma state toward the substrate.

5. 5. The substrate processing apparatus according to claim 4, wherein the second gas is a reactive gas.

6. The purge gas is a first purge gas injected between the first gas and the second gas; a second purge gas that is injected while the second gas and the first gas are being injected, 4. The substrate processing apparatus of claim 3, wherein at least one of the first purge gas and the second purge gas is injected in a plasma state toward the substrate.

7. 7. The substrate processing apparatus according to claim 6, wherein the first gas or the second gas is injected in a plasma state toward the substrate.

8. The first injection unit or the second injection unit is 5. The substrate processing apparatus according to claim 4, further comprising an electrode for injecting the first gas or the second gas into a plasma state toward the substrate.

9. The first injection unit or the second injection unit is 7. The substrate processing apparatus according to claim 6, further comprising an electrode for injecting the first purge gas or the second purge gas in a plasma state toward the substrate.

10. The first injection unit or the second injection unit is 8. The substrate processing apparatus according to claim 7, further comprising an electrode for injecting the first purge gas or the second purge gas in a plasma state toward the substrate.

11. The electrode is a first electrode having a plurality of protruding electrodes formed thereon; and a second electrode having openings formed at positions corresponding to the protruding electrodes, into which the protruding electrodes are inserted; The substrate processing apparatus according to any one of claims 8 to 10, characterized in that an RF power source is applied to at least one of the first electrode or the second electrode so as to generate plasma between the side surface of the protruding electrode and the inner surface of the opening of the second electrode.

12. The first gas is injected through the first gas injection passage extending to the protruding electrode, 12. The substrate processing apparatus according to claim 11, wherein the second gas is injected through a gap between the side surface of the protruding electrode and the inner surface of the opening of the second electrode.

13. 2. The substrate processing apparatus according to claim 1, wherein the third space includes a third injection unit that injects a third purge gas toward the susceptor.

14. 14. The substrate processing apparatus of claim 13, wherein the third purge gas is injected in a plasma state toward the substrate.

15. The third injection unit is 15. The substrate processing apparatus according to claim 14, further comprising an electrode for injecting the third purge gas into a plasma state toward the substrate.

16. the electrodes include a third electrode having a protruding electrode formed thereon, and a fourth electrode having an opening formed at a position corresponding to the protruding electrode, the protruding electrode being inserted into the opening; 16. The substrate processing apparatus according to claim 15, wherein an RF power supply is applied to at least one of the third electrode and the fourth electrode so as to generate plasma between a side surface of the protruding electrode and an inner surface of the opening of the fourth electrode.

17. 15. The substrate processing apparatus according to claim 1, 4, 6, 7, 13, or 14, wherein a plasma process is performed on the thin film formed on the substrate.

18. 2. The substrate processing apparatus according to claim 1, further comprising a heater provided below the susceptor and having a heater member and a power supply terminal portion formed in a predetermined pattern.

19. 19. The substrate processing apparatus according to claim 18, wherein the power supply terminal portion formed in the first space and the power supply terminal portion formed in the second space are arranged asymmetrically.

20. A substrate processing method for processing a substrate using a substrate processing apparatus including: a chamber including a first space, a second space not overlapping the first space, and a third space between the first space and the second space; a rotatable susceptor supporting at least one substrate in the first space and the second space; a first injection unit facing the susceptor and injecting at least two or more different gases into the first space; and a second injection unit facing the susceptor and injecting at least two or more different gases into the second space, a substrate placement step of placing at least one first substrate below each of the first ejection units and placing at least one second substrate below each of the second ejection units; a first thin film forming step in which a source gas and a reaction gas are sequentially injected from the first injection part and the second injection part toward the first substrate and the second substrate, respectively, and the step is repeated at least once; a first susceptor rotation step of rotating the susceptor by a predetermined angle, moving the first substrate to below the second jetting unit, and moving the second substrate to below the first jetting unit; a second thin film forming step in which a source gas and a reaction gas are alternately injected from the first injection part and the second injection part toward the second substrate and the first substrate, respectively, and this is repeated at least once; A substrate processing method comprising:

21. 21. The substrate processing method of claim 20, wherein at least one of the reactive gas from the first injection unit and the reactive gas from the second injection unit is injected toward the substrate in a plasma state.

22. 21. The substrate processing method according to claim 20, wherein the susceptor is stopped when the source gas or the reaction gas is injected.

23. the method further includes a second susceptor rotation step of rotating the susceptor by a predetermined angle after the second thin film formation step, moving the first substrate to a position below the first injection unit, and moving the second substrate to a position below the second injection unit; 21. The substrate processing method according to claim 20, wherein the first thin film forming step, the first susceptor rotating step, the second thin film forming step, and the second susceptor rotating step are alternately repeated until a thin film having a set thickness is formed.

24. 21. The method of claim 20, further comprising: injecting a purge gas while the source gas and the reaction gas are being injected or while the reaction gas and the source gas are being injected.

25. The purge gas includes a first purge gas injected between the source gas and the reaction gas; a second purge gas injected while the reaction gas and the source gas are being injected; 25. The substrate processing method of claim 24, wherein at least one of the first purge gas and the second purge gas is injected toward the substrate in a plasma state.

26. 26. The substrate processing method of claim 25, wherein the source gas or the reaction gas is injected toward the substrate in a plasma state.

27. the third space includes a third injection unit that injects a third purge gas toward the susceptor, 21. The substrate processing method according to claim 20, wherein the third purge gas is injected from the third injection unit toward the susceptor in the first susceptor rotating step.

28. the third space includes a third injection unit that injects a third purge gas toward the susceptor, 24. The substrate processing method according to claim 23, wherein the third purge gas is injected from the third injection part toward the susceptor in the first susceptor rotating step or the second susceptor rotating step.

29. 29. The substrate processing method according to claim 27, wherein the third purge gas is injected in a plasma state toward the substrate.

30. 29. A substrate processing method according to claim 20, 21, 25, 26, 27, or 28, wherein a plasma processing is performed on the thin film formed on the substrate.

31. 30. The substrate processing method according to claim 29, wherein a plasma processing is performed on the thin film formed on the substrate.

32. the third space includes a third injection unit that injects a third purge gas toward the susceptor, When the source gas or the reaction gas is injected, 26. The substrate processing method according to claim 24, wherein a third purge gas is injected from the third injection part toward the susceptor.

33. 33. The substrate processing method according to claim 32, wherein a plasma processing is performed on the thin film formed on the substrate.

34. 33. The substrate processing method of claim 32, wherein the third purge gas is injected toward the substrate in a plasma state.

35. 35. The substrate processing method according to claim 34, wherein a plasma processing is performed on the thin film formed on the substrate.

36. A substrate processing method for processing a substrate using a substrate processing apparatus including: a chamber including a first space, a second space not overlapping the first space, and a third space between the first space and the second space; a rotatable susceptor supporting at least one substrate in the first space and the second space; a first injection unit facing the susceptor and injecting at least two or more different gases into the first space; and a second injection unit facing the susceptor and injecting at least two or more different gases into the second space, a substrate placement step of placing at least one first substrate below each of the first ejection units and placing at least one second substrate below each of the second ejection units; a thin film forming step of sequentially injecting a source gas and a reaction gas from the first injector and the second injector toward the first substrate and the second substrate, respectively, to form a first thin film, and after the susceptor rotates, sequentially injecting a source gas and a reaction gas from the first injector and the second injector toward the second substrate and the first substrate, respectively, to form a second thin film, and repeating this at least once; Including, The thin film forming step includes: injecting the source gas through a first gas injection passage; injecting the reaction gas through a second gas injection passage having a path different from that of the first gas injection passage; The substrate processing method further comprises:

37. The step of injecting the source gas includes:

37. The method of claim 36, further comprising injecting the source gas through the first gas injection passage formed in a protruding electrode of a first electrode.

38. The step of injecting the reaction gas includes:

38. The substrate processing method of claim 37, further comprising injecting the reactive gas through a second gas injection passage between an inner surface of an opening of a second electrode having an opening formed at a position corresponding to the protruding electrode and a side surface of the protruding electrode.

39. the third space includes a third injection unit that injects a third purge gas toward the susceptor, 37. The substrate processing method of claim 36, wherein the third purge gas is injected from the third injection part toward the susceptor when the source gas or the reaction gas is injected in the thin film forming step.

40. 40. The substrate processing method of claim 39, wherein the third purge gas is injected in a plasma state toward the susceptor.

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