Etching method and etching apparatus

Abstract

To provide an isotropic etching method and an etching apparatus that can control the amount of etching with high precision.SOLUTION: An etching method includes a step of supplying oxygen radicals or ozone to a wafer 8 placed on a wafer stage 9 in a processing chamber 7 inside a vacuum vessel 11 to form an oxide layer 5 on the surface of a SiCO film 1, a step of generating reactive radicals from a gas containing CF4 and NH3 by generating plasma to modify the oxide layer 5 into a surface modification layer 6, and a step of desorbing and removing the surface modification layer 6. The step of forming the oxide layer 5, the step of forming the surface modification layer 6, and the step of desorbing and removing the surface modification layer 6 are repeated to etch the SiCO film 1 formed on the wafer 8.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to an etching method and an etching apparatus for etching a SiCO (low-k) film. [Background technology]

[0002] In the field of semiconductor devices, the demand for lower power consumption and increased storage capacity is driving further miniaturization and the shift to three-dimensional device structures in both logic and memory devices. For example, in logic devices, FinFETs (FinFETs) are approaching their miniaturization limits, so device manufacturers are developing gate-all-around (GAA) devices. In memory devices, 3D NAND flash memory has already become mainstream, and 3D DRAM development is also progressing vigorously.

[0003] Three-dimensional devices have a more three-dimensional and complex structure than two-dimensional devices, and their manufacturing often involves not only vertical (anisotropic) etching, which involves etching perpendicular to the wafer surface, but also isotropic etching, which allows etching laterally to the wafer surface.

[0004] Isotropic etching has traditionally been performed using wet processing with chemicals, but with the advancement of miniaturization, problems such as pattern collapse due to the surface tension of the chemicals and etching residue in minute gaps have become apparent. Therefore, there is a growing trend to replace the conventional wet processing with chemicals in isotropic etching with dry processing that does not use chemicals.

[0005] Patent Document 1 discloses, as an example of isotropic dry etching of a silicon oxide film, a processing method in which the silicon oxide surface is modified using HF gas and NH3 gas, and then the substrate is heated to desorb and remove the modified layer, thereby removing the silicon oxide film.

[0006] Non-Patent Document 1 discloses a method for isotropic dry etching of a silicon oxide film, in which the surface is modified with CF4 / NH3 plasma, and then the modified layer is removed to remove the silicon oxide film. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2020-4837 [Non-patent literature]

[0008] [Non-Patent Document 1] Journal of Vacuum Science and Technology A, 38 022604 (2020). Summary of the Invention [Problem to be solved by the invention]

[0009] For example, when processing the gate area of ​​FinFET (FinFET) or Gate-All-Around (GAA) devices, it is expected that a technology will be required that can etch SiCO film, a low-k material, isotropically and uniformly across the substrate surface and in the depth direction with atomic layer-level controllability.

[0010] Figure 1 shows an example of isotropic processing of a SiCO film 1 in a next-generation GAA device. The SiCO film 1 is deposited to cover a Si nanosheet 2, a SiGe sacrificial layer 3, and a CMOS gate 4. Beneath these gate structures is a silicon oxide film layer or silicon substrate. This etching process requires isotropic etching of the SiCO film 1 and precise and uniform control of the etching amount across the entire surface of the three-dimensional structure (within the substrate surface and in the depth direction).

[0011] With conventional wet processing, it is difficult to precisely control the etching amount, and there are issues such as pattern collapse due to the surface tension of the chemical solution and etching remaining in minute gaps. Furthermore, with spontaneous etching using reactive radicals, the etching rate of the SiCO film differs between the top and bottom of the pattern due to the rate-limiting effect of the radical supply, making it difficult to process the SiCO film uniformly across the pattern.

[0012] Furthermore, in the method disclosed in Patent Document 1, it has been confirmed that as the number of cycles of the etching process increases, the silicon oxide film (SiO2) is etched, while the SiCO film is not, as shown in Figure 2. Also, the isotropic atomic layer etching method for silicon oxide films disclosed in Non-Patent Document 1 has the problem that the etching rate for the SiCO film is extremely small.

[0013] The present invention has been made in view of the above problems of the prior art, and has as its object to provide an isotropic etching method and etching apparatus that can realize highly accurate control of the etching amount. [Means for solving the problem]

[0014] An etching method according to one embodiment of the present invention is an etching method for etching a SiCO film formed on a wafer, which repeats the following steps: supplying oxygen radicals or ozone to a wafer placed on a wafer stage in a processing chamber inside a vacuum vessel to oxidize the surface of the SiCO film; supplying reactive radicals to the wafer using plasma to form a modified layer from the oxidized layer on the surface of the SiCO film; and desorbing and removing the modified layer.

[0015] Another embodiment of the present invention provides an etching processing apparatus comprising: a vacuum vessel having a processing chamber and a plasma source disposed above the processing chamber; a wafer stage disposed within the processing chamber on which a wafer having a SiCO film formed thereon is placed; a first mass flow controller for supplying a processing gas used for the plasma processing to the plasma source; a heating device for heating the wafer; and a control unit for controlling the etching processing of the SiCO film. The control unit repeatedly performs the following steps: introducing an oxygen-containing gas, the supply flow rate of which is adjusted by the first mass flow controller, into the plasma source and generating plasma in the plasma source, thereby supplying the generated oxygen radicals or ozone to the wafer to oxidize the surface of the SiCO film; introducing a gas containing CF4 and NH3, the supply flow rate of which is adjusted by the first mass flow controller, into the plasma source and generating plasma in the plasma source, thereby supplying the generated reactive radicals to the wafer to form a modified layer on the surface of the SiCO film; and heating the wafer with the heating device to desorb and remove the modified layer. [Effects of the Invention]

[0016] In isotropic dry etching of a SiCO film, it is possible to control the etching amount with high precision and achieve uniform processing across the wafer and in the depth direction. Other problems, configurations, and effects will become clear from the description of the following embodiments. [Brief explanation of the drawings]

[0017] [Figure 1] 1 is a schematic diagram of an isotropic etching step of a SiCO film in the manufacturing process of a GAA device. [Figure 2] FIG. 1 is a diagram showing experimental results of the relationship between the amount of etching and the number of cycles when an SiO 2 film and an SiCO film are etched using the technique disclosed in Patent Document 1. [Figure 3] 1 is a schematic diagram of an etching process procedure according to the present embodiment. [Figure 4] FIG. 10 is a diagram showing the dependency of the etching amount on the number of cycles in the etching method of the present embodiment. [Figure 5]FIG. 10 is a diagram showing the surface oxidation time dependency of the etching rate in the etching method of the present embodiment. [Figure 6] FIG. 10 is a diagram showing the dependence of the etching rate on the surface modification time in the etching method of the present embodiment. [Figure 7] FIG. 1 is a schematic view of an etching processing apparatus. [Figure 8] 3 is a time sequence of the etching method of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0018] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0019] The etching procedure of this embodiment is outlined in Figure 3. In the first step, oxygen-containing gas is introduced into a vacuum chamber, and a plasma device is used to generate plasma inside the vacuum chamber, generating oxygen radicals or ozone to form an oxide layer 5 on the surface of the SiCO film 1. In the second step, the oxygen-containing gas remaining in the gas phase is evacuated. In the third step, CF4 and NH3-containing gas is introduced into the vacuum chamber, and a plasma device is used to generate plasma inside the vacuum chamber, generating reactive radicals to modify the oxide layer 5 into a compound layer (surface modification layer) 6 containing nitrogen, hydrogen, silicon, fluorine, carbon, and oxygen. In the fourth step, the gas remaining in the gas phase is evacuated. In the fifth step, thermal energy is applied to the wafer to thermally decompose the surface modification layer 6 into volatile molecules, which are then desorbed, thereby etching the SiCO film 1. Then, in the sixth step, the wafer is cooled to the temperature during surface oxidation. Steps 1 through 6 are repeated to finally control the etching depth to the desired value.

[0020] Figure 4 shows the dependence of the etching amount of SiCO film 1 on the number of cycles when steps 1 through 6 are repeated. The results are shown for both cases with and without a surface oxidation step. It can be seen that the etching amount of the SiCO film increases with the number of cycles. It can also be seen that adding the surface oxidation step increases the etching amount by approximately eight times. Next, Figure 5 shows the dependence of the etching rate (etching amount per cycle) on the surface oxidation time. Here, the surface modification time is fixed at 150 s. It can be seen that the increase in the etching rate saturates with increasing oxidation time, with the saturation time being 10 s. Furthermore, Figure 6 shows the dependence of the etching rate on the surface modification time. Here, the surface oxidation time is fixed at 30 s. It can be seen that the increase in the etching rate saturates with increasing surface modification time, with the saturation time being approximately 30 to 60 s.

[0021] 5 and 6 demonstrate that the etching process used in this example is a self-limiting atomic layer etching (ALE) process. This etching process enables highly accurate control of the etching amount and uniform processing across the wafer and in the depth direction during isotropic dry etching of a SiCO film.

[0022] The overall configuration of the etching processing apparatus will be outlined using Figure 7. The processing chamber 7 is composed of a base chamber (vacuum vessel) 11, inside which a wafer stage 9 is installed for placing a wafer 8. A plasma source (ICP plasma source) using the ICP (Inductively Coupled Plasma) discharge method is installed above the processing chamber 7. The ICP plasma source is used to clean the inner walls of the chamber with plasma and to generate reactive gases using plasma.

[0023] A cylindrical discharge tube 12 constituting an ICP plasma source is installed above the processing chamber 7, and an ICP coil 20 is installed outside the discharge tube 12. A high-frequency power supply 21 for generating plasma is connected to the ICP coil 20 via a matching device 22. The high-frequency power from the high-frequency power supply 21 uses a frequency band of several tens of megahertz, such as 13.56 MHz. A top plate 25 is installed above the discharge tube 12. A gas dispersion plate 24 and a shower plate 23 are installed below the top plate 25, and processing gas is introduced into the discharge tube 12 via the gas dispersion plate 24 and the shower plate 23. The discharge tube 12 and high-frequency power supply 21 together constitute a plasma source.

[0024] The supply flow rate of the process gas is adjusted by mass flow controllers 50 installed for each gas type. In addition, a gas distributor 51 is installed downstream of the mass flow controller 50, and the flow rate and composition of the gas supplied near the center of the discharge tube 12 and the gas supplied near the periphery are independently controlled. This allows for detailed control of the spatial distribution of the process gas partial pressure. Note that while Figure 7 shows an example in which Ar, N2, CHF3, CF4, SF6, O2, NF3, HF, Cl2, BCl3, NH3, H2, CH2F2, CH3F, and CH3OH are used as process gases, other gases may also be used.

[0025] An exhaust mechanism 15 is connected to the bottom of the processing chamber 7 via vacuum exhaust piping 16 in order to reduce the pressure in the processing chamber 7. The exhaust mechanism 15 is configured, for example, by a turbomolecular pump, a mechanical booster pump, or a dry pump, but is not limited to these. In addition, a pressure adjustment mechanism 14 is installed on the vacuum exhaust piping 16 connected to the exhaust mechanism 15 in order to adjust the pressure in the processing chamber 7.

[0026] An IR lamp unit for heating the wafer 8 is installed above the wafer stage 9. The IR lamp unit includes an IR lamp 60, a reflector 61 that reflects IR light, and an IR light transmitting window 72. Here, the IR lamps 60 used are circular (circular-shaped) IR lamps 60-1, 60-2, and 60-3.

[0027] The IR lamps 60 emit light (herein referred to as IR light) mainly ranging from visible light to infrared light. In this example, three circles of IR lamps 60-1, 60-2, and 60-3 are arranged concentrically, but two circles, or four or more circles may also be used. A reflector 61 is installed above the IR lamps 60 to reflect the IR light downward (towards the wafer placement direction).

[0028] An IR lamp power supply 73 is connected to the IR lamp 60, and a high frequency cut filter 74 is installed midway to prevent high frequency power noise from entering the IR lamp power supply 73. The IR lamp power supply 73 is also provided with a function to independently control the power supplied to the IR lamps 60-1 to 60-3, making it possible to adjust the radial distribution of the amount of heat applied to the wafer 8 (some of the wiring is not shown).

[0029] A flow path 27 is formed in the center of the IR lamp unit. A slit plate 26 with multiple holes is installed in this flow path 27 to block ions and electrons generated in the plasma and allow only neutral gases and neutral radicals to pass through and irradiate the wafer 8.

[0030] The wafer stage 9 has a coolant flow path 39 formed inside for cooling the stage, and a chiller 38 circulates and supplies the coolant through the flow path 39. In addition, to fix the wafer 8 by electrostatic adsorption, a plate-shaped electrode plate 30 is embedded in the stage and is connected to a DC power supply 31.

[0031] Furthermore, in order to efficiently cool the wafer 8, helium (He) gas with its flow rate adjusted by a mass flow controller 55 can be supplied between the backside of the wafer 8 and the wafer stage 9. Furthermore, the surface of the wafer stage 9 (the surface on which the wafer 8 is placed) is coated with a resin such as polyimide so that the backside of the wafer is not scratched when heating and cooling is performed while the wafer 8 is still held by suction. Furthermore, a thermocouple 70 for measuring the temperature of the stage is installed inside the wafer stage 9, and this thermocouple is connected to a thermocouple thermometer 71.

[0032] The etching process of this embodiment will be described with reference to FIG. 8. The sequence of FIG. 8 is controlled by a control unit 80 of the etching processing apparatus. The control unit 80 is connected to the power supply, mechanisms, and controller of the etching processing apparatus via control lines 81, and controls these to execute a predetermined sequence. First, a wafer 8 is transferred into the processing chamber 7 through a transfer port (not shown) provided in the processing chamber 7. Then, the wafer 8 is electrostatically fixed to the wafer stage 9 by power supply from a DC power supply 31, and He gas for wafer cooling is supplied to the backside of the wafer 8. The pressure of the He gas is, for example, 1 kPa or 2 kPa.

[0033] Next, Ar gas for diluting the etching gas is supplied to the processing chamber 7 via the mass flow controller 50, the gas distributor 51, and the shower plate 23. The flow rate of the Ar gas is, for example, 0.5 L, 1 L, or 2 L. Thereafter, the diluting Ar gas continues to flow until etching is completed.

[0034] In the first step, a gas containing oxygen molecules is introduced into the processing chamber 7, and the high-frequency power supply 21 is turned on to form a plasma in the discharge region 13, generating oxygen radicals or ozone. For example, when oxygen gas is used, the gas flow rate is 0.5 L, 1 L, or 2 L. The power supplied to the high-frequency power supply 21 is, for example, 1000 W, 1500 W, or 2000 W. The total pressure of the dilution Ar gas and oxygen gas is, for example, 50 Pa, 100 Pa, 200 Pa, or 300 Pa. These reactive species generated in the plasma are supplied to the processing chamber 7 via the flow path 27 and the slit plate 26 and adsorbed onto the surface of the wafer 8. These reactive species react with the surface of the SiCO film 1, forming an oxide layer 5 containing silicon, carbon, oxygen, and hydrogen on the surface of the SiCO film 1. Then, the high-frequency power supply 21 is turned off to stop the plasma generation and the supply of reactive species.

[0035] In the second step, the gas containing oxygen molecules remaining in the gas phase is evacuated to prepare for the gas supply in the next third step.

[0036] In the third step, a gas containing CF4 molecules and NH3 molecules is introduced into the processing chamber 7, and the high-frequency power supply 21 is turned on to form a plasma in the discharge region 13, generating reactive radicals. The flow rate of the CF4 gas is, for example, 0.05 L, 0.1 L, 0.2 L, or 0.3 L, and the flow rate of the NH3 gas is, for example, 0.1 L, 0.2 L, 0.3 L, 0.4 L, or 0.5 L. The total pressure of the dilution gas, CF4 gas, and NH3 gas is, for example, 50 Pa, 100 Pa, 200 Pa, or 300 Pa. The reactive radicals generated in the plasma are supplied to the processing chamber 7 via the flow path 27 and the slit plate 26 and adsorbed onto the surface of the oxide layer 5. The reactive radicals react with the oxide layer 5, forming a compound layer (surface-modified layer) 6 containing nitrogen, hydrogen, silicon, fluorine, carbon, and oxygen. To prevent spontaneous formation and desorption of the surface-modified layer 6, the surface temperature during radical irradiation must be kept below 80°C. Thereafter, the high frequency power supply 21 is turned off to stop the plasma generation and the supply of reactive radicals.

[0037] In the fourth step, the gas containing CF4 molecules and NH3 molecules remaining in the gas phase is evacuated to prepare for the next fifth step.

[0038] In the fifth step, the wafer is heated by the IR lamps 60 to thermally decompose and desorb the surface modification layer 6 formed on the film surface, thereby etching (removing) the SiCO film 1. The wafer temperature at this time is preferably 100°C or higher. To improve the heating efficiency of the IR lamps 60, the supply of He gas to the backside of the wafer 8 is stopped prior to this process. Note that to prevent damage to the semiconductor device due to the heat load, the maximum wafer temperature is preferably 350°C or lower.

[0039] In the sixth step, He gas for cooling the wafer is supplied to the rear surface of the wafer 8 to cool the wafer, and the wafer temperature is returned to the temperature of the wafer stage 9 .

[0040] By repeating the first to sixth steps, the etching amount is finally controlled to a desired value.

[0041] As explained in FIGS. 5 and 6, in the etching process of this embodiment, the etching rate is saturated with respect to the surface oxidation time and the surface modification time, making it possible to perform uniform etching within the wafer surface and in the depth direction.

[0042] In this embodiment, an example is shown in which IR lamps 60 are used to heat the wafer, but the heating method is not limited to this. For example, a method of heating the wafer stage or a method of transporting the wafer separately to a device that only performs heating and then performing the heating process thereon may also be used.

[0043] Furthermore, the present invention is not limited to the above-described embodiments and includes various modifications. For example, the above-described embodiments have been described in detail to clearly explain the present invention, and are not necessarily limited to those including all of the described configurations. Furthermore, it is possible to replace part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is also possible to add, delete, or replace part of the configuration of each embodiment with other configurations. [Explanation of symbols]

[0044] 1: SiCO film, 2: Si nanosheet, 3: SiGe sacrificial layer, 4: CMOS gate, 5: oxide layer, 6: surface modification layer, 7: processing chamber, 8: wafer, 9: wafer stage, 11: base chamber, 12: discharge tube, 13: discharge area, 14: pressure adjustment mechanism, 15: exhaust mechanism, 16: vacuum exhaust piping, 20: ICP coil, 21: high frequency power supply, 22: matching machine, 23: shower plate, 24: gas dispersion plate, 25: top plate, 26: slit plate, 27: flow path, 30: electrode plate, 31: DC power supply, 38: chiller, 39: flow path, 50: mass flow controller, 51: gas distributor, 55: mass flow controller, 60: IR lamp, 61: reflector, 70: thermocouple, 71: thermocouple thermometer, 72: IR light transmission window, 73: IR lamp power supply, 74: high frequency cut filter, 80: control unit, 81: control line.

Claims

1. An etching method for etching a SiCO film formed on a wafer, comprising: a first step of supplying oxygen radicals or ozone to the wafer placed on a wafer stage in a processing chamber inside a vacuum vessel to oxidize the surface of the SiCO film; a second step of supplying reactive radicals to the wafer using plasma to form a modified layer from the oxide layer on the surface of the SiCO film; a third step of heating the wafer to remove the modified layer; An etching method in which the first to third steps are repeated.

2. In claim 1, an etching method for forming the modified layer on the surface of the SiCO film while supplying helium gas between the wafer and the wafer stage;

3. In claim 1, The etching method, wherein the modified layer is a layer of a compound containing nitrogen, hydrogen, silicon, fluorine, oxygen and carbon.

4. In claim 1, CF inside the vacuum vessel 4 and NH 3 and generating plasma inside the vacuum chamber, thereby generating the reactive radicals.

5. In claim 1, An etching method for heating a wafer by irradiating the wafer from above with light mainly in the visible to infrared region.

6. a vacuum vessel having a processing chamber and a plasma source disposed above the processing chamber; a wafer stage provided in the processing chamber and on which a wafer having a SiCO film formed thereon is placed; a first mass flow controller that supplies a process gas to the plasma source; a heating device for heating the wafer; a control unit for controlling the etching process of the SiCO film, The control unit controls a step of introducing an oxygen-containing gas, the supply flow rate of which is adjusted by the first mass flow controller, into the plasma source, and generating plasma in the plasma source to supply oxygen radicals or ozone to the wafer, thereby oxidizing the surface of the SiCO film; and 4 and NH 3 a step of introducing a gas containing the compound into the plasma source, generating plasma in the plasma source, thereby supplying the generated reactive radicals to the wafer, thereby forming a modified layer on the surface of the SiCO film, and a step of heating the wafer with the heating device to desorb and remove the modified layer.

7. In claim 6, a second mass flow controller for supplying helium gas between the wafer and the wafer stage; the control unit introduces the helium gas, the supply flow rate of which is adjusted by the second mass flow controller, between the wafer and the wafer stage in the step of forming the modified layer on the surface of the SiCO film.

8. In claim 6, The modified layer is a layer of a compound containing nitrogen, hydrogen, silicon, fluorine, oxygen and carbon.

9. In claim 6, The heating device is an etching processing apparatus having a lamp that irradiates the wafer from above with light mainly in the visible to infrared light range.

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