magnetic sensor

Abstract

The present disclosure addresses the problem of suppressing a reduction in the precision with which the position of a detected object is detected while suppressing an increase in production steps. In this magnetic sensor, each of a plurality of magnetic resistance pattern parts (131–134) includes a first resistance part (1311, 1321, 1331, 1341) and a second resistance part (1312, 1322, 1332, 1342) that are connected in series. Of the plurality of first resistance parts (1311, 1321, 1331, 1341) and the plurality of second resistance parts (1312, 1322, 1332, 1342), one of the two resistance parts (1311, 1341) that are positioned at either end in a first direction (D1) is connected to a first wiring part (1351) and a second wiring part (1352) of a first wiring pattern part (135). The other of the two resistance parts (1311, 1341) is connected to a first wiring part (1361) and a second wiring part (1362) of a second wiring pattern part (136).

Description

[Technical Field]

[0001] The present disclosure relates generally to magnetic sensors, and more particularly to magnetic sensors including a plurality of magnetoresistive patterns. [Background technology]

[0002] Patent Document 1 describes a magnetic sensor that includes a flexible assembly in which a magnetic detection section, a thin-film conductor (wiring pattern section), and electrode terminals (power terminal, ground terminal) are formed on a flexible substrate.

[0003] The magnetic detection unit has four patterns (magnetic resistance pattern portions) arranged along the moving direction (first direction) of the magnetic medium (detection target). Of the four patterns, two patterns located at both ends in the moving direction have extension portions, which are part of the thin film conductor, extending along a direction (second direction) intersecting the moving direction.

[0004] Patent Document 2 describes a magnetoresistive element (magnetic sensor) that includes a plurality of double zigzag magnetic sensitive pattern units (magnetic resistance pattern portions).

[0005] Each of the multiple double-folded zigzag magnetic sensing pattern units includes multiple main magnetic sensing parts and multiple auxiliary magnetic sensing parts. In each of the multiple double-folded zigzag magnetic sensing pattern units, each of the multiple main magnetic sensing parts is formed along a first direction, which is the direction of movement of the magnet (detection target) relative to the magnetic resistance element. The multiple main magnetic sensing parts are lined up along a second direction perpendicular to the first direction. Each of the multiple auxiliary magnetic sensing parts is formed along the second direction. The multiple auxiliary magnetic sensing parts alternately connect first ends or second ends in the first direction of two adjacent main magnetic sensing parts among the multiple main magnetic sensing parts. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-227134 [Patent Document 2] Japanese Patent Application Laid-Open No. 2001-141514 Summary of the Invention

[0007] However, in a magnetic sensor, if a thin-film conductor is formed from the same material as the four patterns, the resistance value of the extended portion of the thin-film conductor also changes when the magnetic medium moves along the above-mentioned movement direction, which results in a problem of reduced accuracy in detecting the position of the magnetic medium.

[0008] Furthermore, if a thin-film conductor is formed from a material that does not have a magnetoresistive effect and is different from the four patterns in order to prevent a decrease in the accuracy of detecting the position of the magnetic medium, a process for forming the four patterns and a process for forming the thin-film conductor are required, which increases the number of manufacturing processes.

[0009] An object of the present disclosure is to provide a magnetic sensor that can suppress a decrease in detection accuracy of the position of a detection target while suppressing an increase in the number of manufacturing steps.

[0010] A magnetic sensor according to one aspect of the present disclosure is a magnetic sensor that detects the position of a detection target based on a change in magnetic field intensity caused by the relative movement of the detection target along a first direction. The magnetic sensor includes a plurality of magnetoresistive pattern portions, a first wiring pattern portion, and a second wiring pattern portion. The plurality of magnetoresistive pattern portions form a bridge circuit. The first wiring pattern portion is connected to a power supply terminal. The second wiring pattern portion is connected to a ground terminal. The first wiring pattern portion and the second wiring pattern portion are each formed of the same material as the plurality of magnetoresistive pattern portions. The plurality of magnetoresistive pattern portions are arranged along the first direction. Each of the plurality of magnetoresistive pattern portions includes a first resistance portion and a second resistance portion connected in series with each other. Each of the plurality of first resistance portions and the plurality of second resistance portions in the plurality of magnetoresistive pattern portions is formed along a second direction perpendicular to the first direction. Each of the first wiring pattern portion and the second wiring pattern portion includes a first wiring portion and a second wiring portion located on both sides of the plurality of magnetoresistive pattern portions in the second direction. One of the two resistance sections located at both ends in the first direction among the plurality of first resistance sections and the plurality of second resistance sections connects the first wiring section and the second wiring section of the first wiring pattern section, and the other of the two resistance sections connects the first wiring section and the second wiring section of the second wiring pattern section. The plurality of first resistance portions and the plurality of second resistance portions are aligned along the first direction. In each of the plurality of magnetic resistance patterns, an outer edge of the first resistance portion in the first direction is formed along an arc having a center at a point on the center line of the first resistance portion in the second direction, and an outer edge of the second resistance portion in the first direction is formed along an arc having a center at a point on the center line of the second resistance portion in the second direction. A magnetic sensor according to another aspect of the present disclosure is a magnetic sensor that detects the position of a detection target based on a change in magnetic field intensity caused by the relative movement of the detection target along a first direction. The magnetic sensor includes a plurality of magnetoresistive pattern portions, a first wiring pattern portion, a second wiring pattern portion, a third wiring pattern portion, and a fourth wiring pattern portion. The plurality of magnetoresistive pattern portions form a bridge circuit. The first wiring pattern portion is connected to a power supply terminal. The second wiring pattern portion is connected to a ground terminal. The third wiring pattern portion is connected to a first output terminal. The fourth wiring pattern portion is connected to a second output terminal. Each of the first wiring pattern portion and the second wiring pattern portion is formed of the same material as the plurality of magnetoresistive pattern portions. The plurality of magnetoresistive pattern portions are arranged along the first direction. Each of the plurality of magnetoresistive pattern portions includes a first resistor portion and a second resistor portion connected in series to each other. Each of the plurality of first resistor portions and the plurality of second resistor portions in the plurality of magnetoresistive pattern portions is formed along a second direction perpendicular to the first direction. Each of the first wiring pattern portion and the second wiring pattern portion includes a first wiring portion and a second wiring portion located on both sides of the plurality of magnetic resistance patterns in the second direction. One of the two resistance portions located on both ends in the first direction among the plurality of first resistance portions and the plurality of second resistance portions connects the first wiring portion and the second wiring portion of the first wiring pattern portion. The remaining two resistance portions connect the first wiring portion and the second wiring portion of the second wiring pattern portion. The magnetic sensor includes four magnetic resistance patterns as the plurality of magnetic resistance patterns. The bridge circuit is a full bridge circuit configured with the four magnetic resistance patterns. The four magnetic resistance patterns include a first magnetic resistance pattern portion and a second magnetic resistance pattern portion connected in series to each other, and a third magnetic resistance pattern portion and a fourth magnetic resistance pattern portion connected in series to each other.The first wiring pattern is connected to an end of the first magnetic resistance pattern opposite to the second magnetic resistance pattern and an end of the third magnetic resistance pattern opposite to the fourth magnetic resistance pattern. The second wiring pattern is connected to an end of the second magnetic resistance pattern opposite to the first magnetic resistance pattern and an end of the fourth magnetic resistance pattern opposite to the third magnetic resistance pattern. The third wiring pattern is connected to the first magnetic resistance pattern and the second magnetic resistance pattern. The fourth wiring pattern is connected to the third magnetic resistance pattern and the fourth magnetic resistance pattern. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a perspective view of the magnetic sensor according to the first embodiment. [Figure 2] FIG. 2 is a cross-sectional view of the magnetic sensor taken along line XX in FIG. [Figure 3] FIG. 3 is a schematic circuit diagram of the magnetic sensor. [Figure 4] FIG. 4 is a diagram showing an example of the arrangement of the magnetic resistance pattern portion, the wiring pattern portion, and the terminals of the magnetic sensor. [Figure 5]FIG. 5 is a schematic diagram of a detection target of the magnetic sensor. [Figure 6] FIG. 6 is a diagram showing an example of the arrangement of the magnetoresistive pattern portion, the wiring pattern portion, and the terminals of the magnetic sensor according to the second embodiment. [Figure 7] FIG. 7 is a diagram showing an example of the arrangement of the magnetoresistive pattern portion, the wiring pattern portion, and the terminals of the magnetic sensor according to the first modification of the second embodiment. [Figure 8] FIG. 8 is a diagram showing an example of the arrangement of the magnetoresistive pattern portion, the wiring pattern portion, and the terminals of the magnetic sensor according to the second modification of the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0012] The magnetic sensor 1 according to the first and second embodiments will be described below with reference to Fig. 1 to Fig. 8. Fig. 1, Fig. 2, Fig. 4, and Fig. 5 to Fig. 8 referred to in the following first and second embodiments are all schematic diagrams, and the ratios of the sizes and thicknesses of the components in the figures do not necessarily reflect the actual dimensional ratios.

[0013] (Embodiment 1) (1) Overview First, an overview of a magnetic sensor 1 according to the first embodiment will be described with reference to FIGS.

[0014] The magnetic sensor 1 detects the position of a detection target 2 (see FIG. 5 ) by utilizing magnetism. The magnetic sensor 1 is used, for example, as a position sensor such as a linear encoder or a rotary encoder. Specifically, the magnetic sensor 1 is used, for example, as a position sensor (encoder) for detecting the position of a camera lens driven by a motor (linear motor or rotary motor). The magnetic sensor 1 is also used, for example, as a position sensor for detecting the position of a brake pedal, brake lever, or shift lever of an automobile. However, the uses of the magnetic sensor 1 are not limited to the above-mentioned uses. The "position" detected by the magnetic sensor 1 is a concept that includes both the coordinates of the detection target 2 and the rotation angle (orientation of the detection target 2) of the detection target 2 around a rotation axis (virtual axis) passing through the detection target 2. In other words, the magnetic sensor 1 detects at least one of the coordinates of the detection target 2 and the rotation angle of the detection target 2.

[0015] In the following, an example will be described in which the magnetic sensor 1 is used as a linear encoder. The linear encoder may be of either an incremental type or an absolute type. In this embodiment, the magnetic sensor 1 detects the coordinates of an object 2 to be detected.

[0016] In short, the magnetic sensor 1 according to the first embodiment is a magnetic sensor that detects the position of the detection target 2 based on a change in magnetic field intensity caused by the relative movement of the detection target 2 along a first direction D1. The magnetic sensor 1 includes a plurality of magnetoresistive pattern portions 131 to 134, a first wiring pattern portion 135, and a second wiring pattern portion 136. The plurality of magnetoresistive pattern portions 131 to 134 form a bridge circuit. The first wiring pattern portion 135 is connected to a power supply terminal 21. The second wiring pattern portion 136 is connected to a ground terminal 22.

[0017] Each of the first wiring pattern portion 135 and the second wiring pattern portion 136 is formed of the same material as the plurality of magnetoresistive patterns 131 to 134. The plurality of magnetoresistive patterns 131 to 134 are arranged along a first direction D1. Each of the plurality of magnetoresistive patterns 131 to 134 includes first resistor portions 1311, 1321, 1331, and 1341 and second resistor portions 1312, 1322, 1332, and 1342 that are connected in series with each other. Each of the first resistor portions 1311, 1321, 1331, and 1341 and second resistor portions 1312, 1322, 1332, and 1342 is formed along a second direction D2 that is perpendicular to the first direction D1.

[0018] Each of the first wiring pattern portion 135 and the second wiring pattern portion 136 includes first wiring portions 1351, 1361 and second wiring portions 1352, 1362 located on both sides of the plurality of magnetoresistive pattern portions 131 to 134 in the second direction D2. Of the plurality of first resistance portions 1311, 1321, 1331, 1341 and the plurality of second resistance portions 1312, 1322, 1332, 1342 in the plurality of magnetoresistive pattern portions 131 to 134, one of the two resistance portions 1311, 1341 located on both ends in the first direction D1 connects the first wiring portion 1351 and the second wiring portion 1352 of the first wiring pattern portion 135. The other of the two resistance portions 1311, 1341 connects the first wiring portion 1361 and the second wiring portion 1362 of the second wiring pattern portion 136. In the present disclosure, "along the first direction or the second direction" includes not only the case where it is parallel to the first direction or the second direction, but also the case where it is tilted at a predetermined angle (for example, 5 degrees) with respect to the first direction or the second direction.

[0019] As described above, in the magnetic sensor 1 according to the first embodiment, one of the two resistance portions 1311, 1341 located at both ends in the first direction D1 connects the first wiring portion 1351 and the second wiring portion 1352 of the first wiring pattern portion 135, and the other connects the first wiring portion 1361 and the second wiring portion 1362 of the second wiring pattern portion 136. This makes it possible to reduce fluctuations in the resistance values ​​of the first wiring pattern portion 135 and the second wiring pattern portion 136 that occur when the detection target 2 moves along the first direction D1, and as a result, it is possible to suppress a decrease in the detection accuracy of the position of the detection target 2.

[0020] Furthermore, in the magnetic sensor 1 according to the first embodiment, as described above, the first wiring pattern portion 135 and the second wiring pattern portion 136 are each formed from the same material as the plurality of magnetoresistive patterns 131 to 134. This makes it possible to form the first wiring pattern portion 135 and the second wiring pattern portion 136 and the plurality of magnetoresistive patterns 131 to 134 in the same manufacturing process, thereby making it possible to suppress an increase in the number of manufacturing processes. In this way, the magnetic sensor 1 according to the first embodiment makes it possible to suppress a decrease in the detection accuracy of the position of the detection target 2 while suppressing an increase in the number of manufacturing processes.

[0021] (2)Details Next, the magnetic sensor 1 according to the first embodiment will be described in detail with reference to FIGS.

[0022] (2.1) Structure of magnetic sensor First, the structure of a magnetic sensor 1 according to the first embodiment will be described with reference to FIGS.

[0023] As shown in FIGS. 1 and 2, the magnetic sensor 1 according to the first embodiment is formed in a rectangular parallelepiped shape elongated in a first direction D1. In the following description, the longitudinal direction of the magnetic sensor 1 is the first direction D1, the width direction (short-side direction) of the magnetic sensor 1 is the second direction D2, and the thickness direction of the magnetic sensor 1 is the third direction D3; however, these directions are not intended to limit the directions of the magnetic sensor 1 when in use. Furthermore, the arrows indicating "D1," "D2," and "D3" in the drawings are merely shown for the purpose of explanation and do not have any physical substance. In the first embodiment, the first direction D1 is the direction in which the magnetic sensor 1 moves relative to the detection target 2. In the first embodiment, the first direction D1, the second direction D2, and the third direction D3 are perpendicular to one another.

[0024] 1 and 2, the magnetic sensor 1 according to the first embodiment includes a support substrate 11, a glass glaze layer 12, a magnetoresistive layer 13, and a protective film 14. The magnetic sensor 1 according to the first embodiment further includes a plurality of (e.g., four) upper electrodes 15, a plurality of (e.g., four) end surface electrodes 16, a plurality of (e.g., four) lower surface electrodes (back surface electrodes) 17, and a plurality of (e.g., four) plating layers 18. The upper surface electrodes 15, the end surface electrodes 16, and the lower surface electrodes 17 are in one-to-one correspondence.

[0025] The support substrate 11 is, for example, a ceramic substrate. The material of the ceramic substrate is, for example, an alumina sintered body with an alumina content of 96% or more. When viewed from a third direction D3, which is the thickness direction of the magnetic sensor 1, the support substrate 11 is formed in a rectangular shape that is long in a first direction D1, which is the longitudinal direction of the magnetic sensor 1. As shown in FIG. 2, the support substrate 11 has a first main surface 111, a second main surface 112, and an outer peripheral surface 113. Each of the first main surface 111 and the second main surface 112 is a flat surface that extends along both the first direction D1 and the second direction D2. The first main surface 111 and the second main surface 112 face each other in the third direction D3. The outer peripheral surface 113 is a flat surface that extends along the third direction D3.

[0026] The glass glaze layer 12 is mainly composed of, for example, silicon dioxide. The glass glaze layer 12 is formed on the first main surface 111 of the support substrate 11. The glass glaze layer 12 is formed over the entire first main surface 111 of the support substrate 11. When viewed from the third direction D3, the glass glaze layer 12 is formed in a rectangular shape that is long in the first direction D1. In the magnetic sensor 1 according to the first embodiment, the glass glaze layer 12 provides planar smoothness to the plane on which the magnetoresistive layer 13 is formed. Note that the glass glaze layer 12 only needs to be present in at least the region where the multiple magnetoresistive pattern portions 131 to 134 are arranged. The glass glaze layer 12 may also contain lead oxide.

[0027] As shown in FIG. 2, the magnetoresistive layer 13 is formed on the glass glaze layer 12. The magnetoresistive layer 13 includes a plurality of first layers and a plurality of second layers. Each of the plurality of first layers is a magnetic layer and includes, for example, a NiFeCo alloy. Each of the plurality of second layers is a non-magnetic layer and includes, for example, a Cu alloy. The plurality of first layers and the plurality of second layers are alternately stacked on the glass glaze layer 12. In the magnetic sensor 1 according to the first embodiment, the magnetoresistive layer 13 forms a GMR (Giant Magnetic Resistance) film. Note that the number of the plurality of first layers and the number of the plurality of second layers may be the same or different. In the magnetic sensor 1 according to the first embodiment, an outer edge 130 of the magnetoresistive layer 13 is located inside the outer edge 110 of the support substrate 11 in a plan view from the third direction D3.

[0028] The protective film 14 is a film for protecting the magnetoresistive layer 13. The material of the protective film 14 is, for example, epoxy resin. The protective film 14 is formed on the glass glaze layer 12 so as to cover a part of the magnetoresistive layer 13. In the magnetic sensor 1 according to the first embodiment, a power supply terminal 21, a ground terminal 22, a first output terminal 23, and a second output terminal 24 (see FIGS. 3 and 4 ), which will be described later, are each connected to one of the plurality of upper surface electrodes 15. Therefore, the protective film 14 is formed so as to cover the area of ​​the magnetoresistive layer 13 excluding at least the power supply terminal 21, the ground terminal 22, the first output terminal 23, and the second output terminal 24.

[0029] As shown in FIG. 1, the plurality of top electrodes 15 are formed on a first main surface 111 (see FIG. 2) of the support substrate 11. The material of the plurality of top electrodes 15 is, for example, a CuNi (copper-nickel) alloy. The plurality of top electrodes 15 includes a first top electrode 151, a second top electrode 152, a third top electrode 153, and a fourth top electrode 154. Each of the plurality of top electrodes 15 is connected to one of the power supply terminal 21, the ground terminal 22, the first output terminal 23, and the second output terminal 24 of the magnetoresistive layer 13. More specifically, of the plurality of top electrodes 15, the first top electrode 151 is connected to the power supply terminal 21, and the second top electrode 152 is connected to the ground terminal 22. Furthermore, of the plurality of top electrodes 15, the third top electrode 153 is connected to the first output terminal 23, and the fourth top electrode 154 is connected to the second output terminal 24. The upper electrodes 15 are, for example, sputtered films formed by sputtering.

[0030] As shown in FIG. 1 , the multiple end surface electrodes 16 are formed along the first direction D1 to cover the longitudinal outer peripheral surface 113 (see FIG. 2 ) of the support substrate 11. The multiple end surface electrodes 16 are made of, for example, a CuNi (copper-nickel) alloy. The multiple end surface electrodes 16 include a first end surface electrode 161, a second end surface electrode 162, a third end surface electrode 163, and a fourth end surface electrode 164. As described above, the multiple end surface electrodes 16 correspond one-to-one to the multiple top surface electrodes 15. More specifically, the first end surface electrode 161 corresponds to the first top surface electrode 151 and is connected to the first top surface electrode 151. The second end surface electrode 162 corresponds to the second top surface electrode 152 and is connected to the second top surface electrode 152. The third end surface electrode 163 corresponds to the third top surface electrode 153 and is connected to the third top surface electrode 153. The fourth end surface electrode 164 corresponds to the fourth upper surface electrode 154 and is connected to the fourth upper surface electrode 154. The plurality of end surface electrodes 16 are, for example, sputtered films formed by sputtering.

[0031] As shown in FIG. 1, the plurality of lower electrodes 17 are formed on the second main surface 112 of the support substrate 11 (see FIG. 2). The material of the plurality of lower electrodes 17 is, for example, a CuNi (copper-nickel) alloy. The plurality of lower electrodes 17 include a first lower electrode 171, a second lower electrode 172, a third lower electrode 173, and a fourth lower electrode 174. As described above, the plurality of lower electrodes 17 correspond one-to-one to the plurality of upper electrodes 15 and the plurality of end electrodes 16. More specifically, the first lower electrode 171 corresponds to the first upper electrode 151 and the first end electrode 161 and is connected to the first end electrode 161. The second lower electrode 172 corresponds to the second upper electrode 152 and the second end electrode 162 and is connected to the second end electrode 162. The third lower surface electrode 173 corresponds to the third upper surface electrode 153 and the third end surface electrode 163, and is connected to the third end surface electrode 163. The fourth lower surface electrode 174 corresponds to the fourth upper surface electrode 154 and the fourth end surface electrode 164, and is connected to the fourth end surface electrode 164. The multiple lower surface electrodes 17 are, for example, sputtered films formed by sputtering.

[0032] In the magnetic sensor 1 according to the first embodiment, the first upper surface electrode 151, the first end surface electrode 161, and the first lower surface electrode 171 are formed in a U-shape when viewed from the first direction D1. The second upper surface electrode 152, the second end surface electrode 162, and the second lower surface electrode 172 are also formed in a U-shape when viewed from the first direction D1. The third upper surface electrode 153, the third end surface electrode 163, and the third lower surface electrode 173 are also formed in a U-shape when viewed from the first direction D1. The fourth upper surface electrode 154, the fourth end surface electrode 164, and the fourth lower surface electrode 174 are also formed in a U-shape when viewed from the first direction D1.

[0033] According to the magnetic sensor 1 of the first embodiment, it is possible to connect the magnetic sensor 1 to a mounting board on which it is mounted by a plurality of lower surface electrodes 17.

[0034] As shown in FIG. 1, each of the plurality of plating layers 18 is formed to cover a corresponding one of the plurality of upper electrodes 15, the plurality of end electrodes 16, and the plurality of lower electrodes 17. That is, each of the plurality of plating layers 18 is formed in a U-shape when viewed from the first direction D1. Each of the plurality of plating layers 18 includes an electrolytic copper plating layer and an electrolytic tin plating layer. As shown in FIG. 2, each of the plurality of plating layers 18 is in contact with the protective film 14.

[0035] (2.2) Circuit configuration of magnetic sensor Next, the circuit configuration of the magnetic sensor 1 according to the first embodiment will be described with reference to FIG.

[0036] 3, the magnetic sensor 1 according to the first embodiment includes a plurality of (four in the illustrated example) magnetoresistive pattern portions 131 to 134, a first wiring pattern portion 135, a second wiring pattern portion 136, a third wiring pattern portion 137, and a fourth wiring pattern portion 138. The magnetic sensor 1 according to the first embodiment further includes a power supply terminal 21, a ground terminal 22, a first output terminal 23, and a second output terminal 24. The magnetic sensor 1 according to the first embodiment includes four magnetoresistive pattern portions 131 to 134 as the plurality of magnetoresistive pattern portions 131 to 134. The four magnetoresistive pattern portions 131 to 134 include a first magnetoresistive pattern portion 131, a second magnetoresistive pattern portion 132, a third magnetoresistive pattern portion 133, and a fourth magnetoresistive pattern portion 134.

[0037] The first magnetic resistance pattern portion 131, the second magnetic resistance pattern portion 132, the third magnetic resistance pattern portion 133, and the fourth magnetic resistance pattern portion 134 form a full bridge circuit. That is, the bridge circuit provided in the magnetic sensor 1 is a full bridge circuit composed of the four magnetic resistance pattern portions 131 to 134. Specifically, a series circuit of the first magnetic resistance pattern portion 131 and the second magnetic resistance pattern portion 132 and a series circuit of the third magnetic resistance pattern portion 133 and the fourth magnetic resistance pattern portion 134 are connected in parallel to each other. That is, the four magnetic resistance pattern portions 131 to 134 include the first magnetic resistance pattern portion 131 and the second magnetic resistance pattern portion 132 connected in series to each other, and the third magnetic resistance pattern portion 133 and the fourth magnetic resistance pattern portion 134 connected in series to each other.

[0038] A connection point P1 between the first magnetic resistance pattern portion 131 and the second magnetic resistance pattern portion 132 is connected to the first output terminal 23 via a third wiring pattern portion 137. That is, the third wiring pattern portion 137 connected to the first output terminal 23 is connected to a connection point P1 between the first magnetic resistance pattern portion 131 and the second magnetic resistance pattern portion 132, which are connected in series among the four magnetic resistance pattern portions 131 to 134. An end portion of the first magnetic resistance pattern portion 131 opposite to the second magnetic resistance pattern portion 132 side (the left end portion in FIG. 3 ) is connected to the power supply terminal 21 via a first wiring pattern portion 135. That is, the first wiring pattern portion 135 is connected to the power supply terminal 21. An end portion of the second magnetic resistance pattern portion 132 opposite to the first magnetic resistance pattern portion 131 side (the right end portion in FIG. 3 ) is connected to the ground terminal 22 via a second wiring pattern portion 136. That is, the second wiring pattern portion 136 is connected to the ground terminal 22.

[0039] A connection point P2 between the third magnetic resistance pattern portion 133 and the fourth magnetic resistance pattern portion 134 is connected to the second output terminal 24 via a fourth wiring pattern portion 138. That is, the fourth wiring pattern portion 138 connected to the second output terminal 24 is connected to a connection point P2 between the third magnetic resistance pattern portion 133 and the fourth magnetic resistance pattern portion 134, which are connected in series among the four magnetic resistance patterns 131 to 134. An end portion of the third magnetic resistance pattern portion 133 opposite to the fourth magnetic resistance pattern portion 134 side (the left end portion in FIG. 3) is connected to the power supply terminal 21 via a first wiring pattern portion 135. An end portion of the fourth magnetic resistance pattern portion 134 opposite to the third magnetic resistance pattern portion 133 side (the right end portion in FIG. 3) is connected to the ground terminal 22 via a second wiring pattern portion 136.

[0040] That is, in the magnetic sensor 1 according to the first embodiment, a connection point P3 between the first magnetic resistance pattern portion 131 and the third magnetic resistance pattern portion 133 is connected to the power supply terminal 21 via the first wiring pattern portion 135. In other words, the first wiring pattern portion 135 is connected to an end of the first magnetic resistance pattern portion 131 opposite to the second magnetic resistance pattern portion 132 side and an end of the third magnetic resistance pattern portion 133 opposite to the fourth magnetic resistance pattern portion 134 side. Also, in the magnetic sensor 1 according to the first embodiment, a connection point P4 between the second magnetic resistance pattern portion 132 and the fourth magnetic resistance pattern portion 134 is connected to the ground terminal 22 via the second wiring pattern portion 136. In other words, the second wiring pattern portion 136 is connected to an end of the second magnetic resistance pattern portion 132 opposite to the first magnetic resistance pattern portion 131 side and an end of the fourth magnetic resistance pattern portion 134 opposite to the third magnetic resistance pattern portion 133 side.

[0041] The power supply terminal 21, the ground terminal 22, the first output terminal 23, and the second output terminal 24 correspond one-to-one to the multiple top-surface electrodes 15. More specifically, the power supply terminal 21 corresponds one-to-one to a first top-surface electrode 151 among the multiple top-surface electrodes 15 and is connected to the first top-surface electrode 151. The ground terminal 22 corresponds one-to-one to a second top-surface electrode 152 among the multiple top-surface electrodes 15 and is connected to the second top-surface electrode 152. The first output terminal 23 corresponds one-to-one to a third top-surface electrode 153 among the multiple top-surface electrodes 15 and is connected to the third top-surface electrode 153. The second output terminal 24 corresponds one-to-one to a fourth top-surface electrode 154 among the multiple top-surface electrodes 15 and is connected to the fourth top-surface electrode 154.

[0042] In the magnetic sensor 1 according to the first embodiment, the above-described magnetoresistive layer 13 constitutes the plurality of magnetoresistive pattern portions 131-134, first to fourth wiring pattern portions 135-138, and four terminals 21-24. That is, in the magnetic sensor 1 according to the first embodiment, the first to fourth wiring pattern portions 135-138, which connect the plurality of magnetoresistive pattern portions 131-134 to the four terminals 21-24, are formed of the same material as the plurality of magnetoresistive pattern portions 131-134. In other words, the first wiring pattern portion 135 and the second wiring pattern portion 136 are each formed of the same material as the plurality of magnetoresistive pattern portions 131-134.

[0043] (2.3) Example of layout of magnetic resistance pattern, wiring pattern and terminal Next, an example of the arrangement of the multiple magnetoresistive pattern portions 131-134, the first to fourth wiring pattern portions 135-138, and the four terminals 21-24 of the magnetic sensor 1 according to the first embodiment will be described with reference to Fig. 4. In Fig. 4, the multiple magnetoresistive pattern portions 131-134, the first to fourth wiring pattern portions 135-138, and the four terminals 21-24 are hatched with dots to make them easy to identify.

[0044] As shown in FIG. 4, the plurality of magnetoresistive patterns 131 to 134 are arranged along a first direction D1, which is the longitudinal direction of the magnetic sensor 1.

[0045] As shown in FIG. 4, the first magnetic resistance pattern 131 includes a first resistance portion 1311 and a second resistance portion 1312. Each of the first resistance portion 1311 and the second resistance portion 1312 is formed in a meandering shape when viewed from the third direction D3 (a direction perpendicular to the paper surface of FIG. 4). That is, each of the first resistance portion 1311 and the second resistance portion 1312 is formed in a river-like shape meandering along the first direction D1 and the second direction D2 when viewed from the third direction D3. Each of the first resistance portion 1311 and the second resistance portion 1312 is formed along the second direction D2. That is, the longitudinal direction of each of the first resistance portion 1311 and the second resistance portion pattern 1312 is the direction along the second direction D2. The first resistance portion 1311 and the second resistance portion 1312 are connected in series to each other. More specifically, the first resistor portion 1311 and the second resistor portion 1312 are connected in series to each other via a second wiring portion 1352 of a first wiring pattern portion 135 described below.

[0046] As shown in FIG. 4, the second magnetic resistance pattern 132 includes a first resistor 1321 and a second resistor 1322. The first resistor 1321 and the second resistor 1322 are each formed in a meandering shape when viewed from the third direction D3. That is, the first resistor 1321 and the second resistor 1322 are each formed in a river-like shape meandering along the first direction D1 and the second direction D2 when viewed from the third direction D3. The first resistor 1321 and the second resistor 1322 are each formed along the second direction D2. That is, the longitudinal direction of the first resistor 1321 and the second resistor pattern 1322 is the direction along the second direction D2. The first resistor 1321 and the second resistor 1322 are connected in series with each other.

[0047] As shown in FIG. 4 , the third magnetic resistance pattern 133 includes a first resistor 1331 and a second resistor 1332. The first resistor 1331 and the second resistor 1332 are each formed in a meandering shape when viewed from the third direction D3. That is, the first resistor 1331 and the second resistor 1332 are each formed in a river-like shape meandering along the first direction D1 and the second direction D2 when viewed from the third direction D3. The first resistor 1331 and the second resistor 1332 are each formed along the second direction D2. That is, the longitudinal direction of the first resistor 1331 and the second resistor pattern 1332 is the direction along the second direction D2. The first resistor 1331 and the second resistor 1332 are connected in series with each other.

[0048] As shown in FIG. 4 , the fourth magnetic resistance pattern 134 includes a first resistor 1341 and a second resistor 1342. Each of the first resistor 1341 and the second resistor 1342 is formed in a meandering shape when viewed from the third direction D3. That is, each of the first resistor 1341 and the second resistor 1342 is formed in a river-like shape meandering along the first direction D1 and the second direction D2 when viewed from the third direction D3. Each of the first resistor 1341 and the second resistor 1342 is formed along the second direction D2. That is, the longitudinal direction of each of the first resistor 1341 and the second resistor pattern 1342 is the direction along the second direction D2. The first resistor 1341 and the second resistor 1342 are connected in series with each other. More specifically, the first resistor portion 1341 and the second resistor portion 1342 are connected in series to each other via a second wiring portion 1362 of a second wiring pattern portion 136, which will be described later.

[0049] In the magnetic sensor 1 of embodiment 1, as shown in FIG. 4, the multiple magnetic resistance patterns 131 to 134 are arranged in the first direction D1, from left to right, in the following order: first resistance portion 1311 of the first magnetic resistance pattern portion 131, first resistance portion 1331 of the third magnetic resistance pattern portion 133, second resistance portion 1312 of the first magnetic resistance pattern portion 131, second resistance portion 1332 of the third magnetic resistance pattern portion 133, second resistance portion 1322 of the second magnetic resistance pattern portion 132, second resistance portion 1342 of the fourth magnetic resistance pattern portion 134, first resistance portion 1321 of the second magnetic resistance pattern portion 132, and first resistance portion 1341 of the fourth magnetic resistance pattern portion 134. That is, the plurality of first resistor portions 1311, 1321, 1331, and 1341 and the plurality of second resistor portions 1312, 1322, 1332, and 1342 are arranged along the first direction D1.

[0050] In the example shown in FIG. 4 , among the multiple first resistors 1311, 1321, 1331, and 1341 and the multiple second resistors 1312, 1322, 1332, and 1342, the inner resistors 1321, 1331, 1312, 1322, 1332, and 1342 are formed with the same shape when viewed from the third direction D3. In the present disclosure, the term “inner resistor” refers to a resistor having other resistors on both sides in the first direction D1. That is, in the example shown in FIG. 4 , the first resistors 1321 and 1331 and the second resistors 1312, 1322, 1332, and 1342 are inner resistors. Also, in the present disclosure, the term “outer resistor” refers to a resistor having other resistors on only one side in the first direction D1. That is, in the example shown in FIG. 4 , the first resistors 1311 and 1341 are outer resistors. Furthermore, in this disclosure, the term "same shape" does not only refer to the case where the shapes are completely the same, but also includes the case where the shapes are different to the extent that the fluctuations in resistance value with changes in magnetic field strength distribution can be considered to be the same. Therefore, the inner resistors 1321, 1331, 1312, 1322, 1332, and 1342 may have different shapes to the extent that the fluctuations in resistance value with changes in magnetic field strength distribution can be considered to be the same.

[0051] As shown in FIG. 4, the first wiring pattern portion 135 includes a first wiring portion 1351 and a second wiring portion 1352. The first wiring portion 1351 and the second wiring portion 1352 are located on both sides of the plurality of magnetoresistive patterns 131 to 134 in the second direction D2. In the example shown in FIG. 4, the first wiring portion 1351 is located below the plurality of magnetoresistive patterns 131 to 134, and the second wiring portion 1352 is located above the plurality of magnetoresistive patterns 131 to 134. The first wiring portion 1351 is connected to the power supply terminal 21. The first wiring portion 1351 and the second wiring portion 1352 are connected to each other via the first resistor portion 1311 of the first magnetoresistive pattern portion 131.

[0052] As shown in FIG. 4, the second wiring pattern portion 136 includes a first wiring portion 1361 and a second wiring portion 1362. The first wiring portion 1361 and the second wiring portion 1362 are located on both sides of the plurality of magnetoresistive patterns 131 to 134 in the second direction D2. In the example shown in FIG. 4, the first wiring portion 1361 is located above the plurality of magnetoresistive patterns 131 to 134, and the second wiring portion 1362 is located below the plurality of magnetoresistive patterns 131 to 134. The first wiring portion 1361 is connected to the ground terminal 22. The first wiring portion 1361 and the second wiring portion 1362 are connected to each other via the first resistor portion 1341 of the fourth magnetoresistive pattern portion 134.

[0053] As shown in Fig. 4, the third wiring pattern portion 137 is connected to the first output terminal 23. As shown in Fig. 4, the fourth wiring pattern portion 138 is connected to the second output terminal 24. The third wiring pattern portion 137 and the fourth wiring pattern portion 138 are located on both sides of the plurality of magnetoresistive pattern portions 131 to 134 in the second direction D2. In the example shown in Fig. 4, the third wiring pattern portion 137 is located above the plurality of magnetoresistive pattern portions 131 to 134, and the fourth wiring pattern portion 138 is located below the plurality of magnetoresistive pattern portions 131 to 134.

[0054] In the magnetic sensor 1 according to the first embodiment, the first resistance portion 1311 is one of the two resistance portions 1311, 1341 located at both ends in the first direction D1 among the plurality of first resistance portions 1311, 1321, 1331, 1341 and the plurality of second resistance portions 1312, 1322, 1332, 1342. The first resistance portion 1311 is one of the two resistance portions 1311, 1341 located at both ends in the first direction D1. The first resistance portion 1311 connects a first wiring portion 1351 and a second wiring portion 1352 of the first wiring pattern portion 135. The remaining first resistance portion 1341 of the two resistance portions 1311, 1341 connects a first wiring portion 1361 and a second wiring portion 1362 of the second wiring pattern portion 136.

[0055] Here, the detection target 2 is, for example, a magnetic scale. As shown in FIG. 5, the detection target 2 is formed in the shape of a long plate extending along the first direction D1. The detection target 2 faces the magnetic sensor 1 in the third direction D3 (a direction perpendicular to the paper surface of FIG. 5). The detection target 2 includes a plurality of magnetic poles. The plurality of magnetic poles are arranged along the first direction D1. The plurality of magnetic poles include one or more north poles and one or more south poles. The plurality of magnetic poles are arranged such that one or more south poles and one or more north poles are alternately arranged in the first direction D1. Each magnetic pole is, for example, a ferrite magnet or a neodymium magnet. The detection target 2 includes a plurality of ferrite magnets or a plurality of neodymium magnets arranged along the first direction D1. As shown in FIG. 5, the detection target 2 is magnetized in the first direction D1 with a magnetization period λ.

[0056] In the first embodiment, for example, the magnetic sensor 1 moves along the first direction D1 relative to the detection target 2, which changes the magnetic field strength between the magnetic sensor 1 and the detection target 2, and this change in magnetic field strength causes the resistance values ​​of the multiple magnetic resistance pattern portions 131 to 134 to vary. Then, the position of the detection target 2 can be detected by detecting the potentials of the first output terminal 23 and the second output terminal 24. Note that the magnetic sensor 1 and the detection target 2 only need to be configured to move relative to each other, and the detection target 2 may also be configured to move relative to the magnetic sensor 1.

[0057] (3) Manufacturing method of magnetic sensor Next, a method for manufacturing the magnetic sensor 1 according to the first embodiment will be described.

[0058] The method for manufacturing the magnetic sensor 1 includes first to ninth steps.

[0059] In the first step, the support substrate 11 is prepared. More specifically, in the first step, a substrate body that will become the base of the support substrate 11 of each of the multiple magnetic sensors 1 is prepared. The substrate body is, for example, a ceramic substrate. The material of the ceramic substrate that will become the substrate body is, for example, an alumina sintered body with an alumina content of 96% or more.

[0060] In the second step, a glass glaze layer 12 is formed on the first main surface of the substrate body. The first main surface of the substrate body is a surface that becomes the first main surface 111 of the support substrate 11 of each of the multiple magnetic sensors 1. More specifically, in the second step, for example, a glass paste is applied to the first main surface 111 of the support substrate 11, and then the glass glaze layer 12 is formed by firing the glass paste.

[0061] In the third step, the magnetoresistive layer 13 is formed for each of the plurality of magnetic sensors 1. More specifically, in the third step, the magnetoresistive layer 13 is formed on the glass glaze layer 12 by, for example, sputtering. In the magnetic sensor 1 according to the first embodiment, as described above, the magnetoresistive layer 13 constitutes a GMR film, and NiFeCo alloy layers (first layers) and Cu alloy layers (second layers) are formed alternately.

[0062] In the fourth step, the protective film 14 is formed. More specifically, in the fourth step, for example, an epoxy resin is applied by screen printing onto the glass glaze layer 12 so as to cover a portion of the magnetoresistive layer 13, and then the epoxy resin is thermally cured to form the protective film 14. Here, the protective film 14 is formed so as to cover at least the areas excluding the power supply terminal 21, the ground terminal 22, the first output terminal 23, and the second output terminal 24.

[0063] In the fifth step, the plurality of upper electrodes 15 for each of the plurality of magnetic sensors 1 are formed on the first main surface of the substrate body. More specifically, in the fifth step, the plurality of upper electrodes 15 for each of the plurality of magnetic sensors 1 are formed by, for example, forming a CuNi-based alloy film on the first main surface of the substrate body by sputtering.

[0064] In the sixth step, a plurality of lower electrodes 17 for each of the plurality of magnetic sensors 1 are formed on the second main surface of the substrate body. More specifically, in the sixth step, a CuNi-based alloy film is formed on the second main surface of the substrate body by sputtering, for example, to form a plurality of lower electrodes 17 for each of the plurality of magnetic sensors 1. The second main surface of the substrate body is a surface that becomes the second main surface 112 of the support substrate 11 for each of the plurality of magnetic sensors 1.

[0065] In the seventh step, the plurality of magnetic sensors 1 integrally formed by the first to sixth steps are cut into individual magnetic sensors 1. More specifically, in the seventh step, the plurality of magnetic sensors 1 integrally formed are cut into individual magnetic sensors 1 using, for example, a laser or dicing.

[0066] In the eighth step, a plurality of end electrodes 16 are formed on the individually cut magnetic sensors 1. More specifically, in the eighth step, a CuNi-based alloy film is formed on the outer peripheral surface 113 of the support substrate 11 by sputtering, for example, to form the plurality of end electrodes 16 on each of the plurality of magnetic sensors 1. As a result, the plurality of upper electrodes 15 and the plurality of lower electrodes 17 are connected via the plurality of end electrodes 16.

[0067] In the ninth step, the plating layer 18 is formed on each of the plurality of magnetic sensors 1. More specifically, in the ninth step, for example, a Cu plating layer and an Sn plating layer that constitute the plating layer 18 are sequentially formed on each of the plurality of magnetic sensors 1.

[0068] The magnetic sensor 1 according to the first embodiment can be manufactured through the first to ninth steps described above.

[0069] (4) Effects As described above, in the magnetic sensor 1 according to the first embodiment, one of the two resistance portions 1311, 1341 located at both ends in the first direction D1 connects the first wiring portion 1351 and the second wiring portion 1352 of the first wiring pattern portion 135, and the other connects the first wiring portion 1361 and the second wiring portion 1362 of the second wiring pattern portion 136. As a result, when the detection target 2 moves along the first direction D1, the outer resistance portions 1311, 1341 connecting the upper and lower wiring patterns exhibit a resistance value fluctuation amount similar to that of the inner resistance portions 1321, 1331, 312, 1322, 1332, 1342, and as a result, it is possible to suppress a decrease in the detection accuracy of the position of the detection target 2.

[0070] Furthermore, in the magnetic sensor 1 according to the first embodiment, as described above, the first wiring pattern portion 135 and the second wiring pattern portion 136 are each formed from the same material as the plurality of magnetoresistive patterns 131 to 134. This makes it possible to form the first wiring pattern portion 135 and the second wiring pattern portion 136 and the plurality of magnetoresistive patterns 131 to 134 in the same manufacturing process, thereby making it possible to suppress an increase in the number of manufacturing processes. In this way, the magnetic sensor 1 according to the first embodiment makes it possible to suppress a decrease in the detection accuracy of the position of the detection target 2 while suppressing an increase in the number of manufacturing processes.

[0071] Furthermore, in the magnetic sensor 1 according to the first embodiment, as described above, the multiple (four) magnetic resistance patterns 131 to 134 form a full-bridge circuit.

[0072] Furthermore, in the magnetic sensor 1 according to the first embodiment, as described above, the inner resistor portions 1312, 1321, 1322, 1331, 1332, and 1342 are formed to have the same shape when viewed from the third direction D3. This allows the fluctuations in the resistance values ​​of the inner resistor portions 1312, 1321, 1322, 1331, 1332, and 1342 to behave in the same manner, thereby reducing errors due to waveform distortion.

[0073] (5) Variations The first embodiment is merely one of various embodiments of the present disclosure. Various modifications of the first embodiment are possible depending on the design, etc., as long as the object of the present disclosure can be achieved. Modifications of the first embodiment are listed below. The modifications described below can be applied in appropriate combinations.

[0074] In the first embodiment, the inner resistance portions 1312, 1321, 1322, 1331, 1332, and 1342 of the plurality of first resistance portions 1311, 1321, 1331, and 1341 and the plurality of second resistance portions 1312, 1322, 1332, and 1342 are formed to have the same shape when viewed from the third direction D3. Alternatively, all of the plurality of first resistance portions 1311, 1321, 1331, and 1341 and the plurality of second resistance portions 1312, 1322, 1332, and 1342 may be formed to have the same shape when viewed from the third direction D3. In short, it is sufficient that at least the inner resistor portions 1312, 1321, 1322, 1331, 1332, 1342 of the plurality of first resistor portions 1311, 1321, 1331, 1341 and the plurality of second resistor portions 1312, 1322, 1332, 1342 are formed in the same shape when viewed from the third direction D3.

[0075] The shape of each of the plurality of first resistor portions 1311, 1321, 1331, and 1341 and the plurality of second resistor portions 1312, 1322, 1332, and 1342 is not limited to a meandering shape, and may be another shape.

[0076] In embodiment 1, each of the magnetic resistance patterns 131 to 134 is composed of two resistance portions, but each of the magnetic resistance patterns 131 to 134 may be composed of, for example, one resistance portion, or three or more resistance portions.

[0077] (Embodiment 2) The magnetic sensor according to the second embodiment will be described with reference to Figures 6 to 8. In the following description, the same components as those in the magnetic sensor 1 according to the first embodiment will be denoted by the same reference numerals and description thereof will be omitted.

[0078] The magnetic sensor of embodiment 2 differs from the magnetic sensor 1 of embodiment 1 in that the outer edges 101, 102 of each of the multiple first resistance portions 1311, 1321, 1331, 1341 are arc-shaped, and the outer edges 201, 202 of each of the multiple second resistance portions 1312, 1322, 1332, 1342 are arc-shaped.

[0079] (1) Overview Patent Document 2 describes a magnetoresistive element (magnetic sensor) that includes a plurality of double zigzag magnetic sensitive pattern units (magnetic resistance pattern portions).

[0080] Each of the multiple double-folded zigzag magnetic sensing pattern units includes multiple main magnetic sensing parts and multiple auxiliary magnetic sensing parts. In each of the multiple double-folded zigzag magnetic sensing pattern units, each of the multiple main magnetic sensing parts is formed along a first direction, which is the direction of movement of the magnet (detection target) relative to the magnetic resistance element. The multiple main magnetic sensing parts are lined up along a second direction perpendicular to the first direction. Each of the multiple auxiliary magnetic sensing parts is formed along the second direction. The multiple auxiliary magnetic sensing parts alternately connect first ends or second ends in the first direction of two adjacent main magnetic sensing parts among the multiple main magnetic sensing parts.

[0081] The magnetic sensor described in Patent Document 2 has a problem in that, for example, when the magnetoresistive element is tilted with respect to the direction of movement of the magnet, the detection accuracy of the magnet position decreases. The magnetic sensor according to Embodiment 2 employs the following configuration to solve the above problem.

[0082] That is, the magnetic sensor according to the second embodiment is a magnetic sensor that detects the position of the detection target 2 (see FIG. 3) based on a change in magnetic field intensity that occurs when the detection target 2 moves relatively along the first direction D1. As shown in FIG. 6, the magnetic sensor 1 includes a plurality of magnetoresistive patterns 131 to 134. The plurality of magnetoresistive patterns 131 to 134 form a bridge circuit.

[0083] As shown in FIG. 6, each of the magnetoresistive patterns 131-134 includes first resistors 1311, 1321, 1331, 1341 and second resistors 1312, 1322, 1332, 1342 connected in series. Each of the first resistors 1311, 1321, 1331, 1341 and second resistors 1312, 1322, 1332, 1342 in the magnetoresistive patterns 131-134 is formed along a second direction D2. The second direction D2 is a direction perpendicular to the first direction D1. The first resistors 1311, 1321, 1331, 1341 and second resistors 1312, 1322, 1332, 1342 are aligned along the first direction D1.

[0084] In each of the multiple magnetoresistive patterns 131-134, outer edges 101, 102 of the first resistor portions 1311-1341 in the first direction D1 are formed in a shape that follows an arc a1 centered at point P5 on the center line Ax2 of the first resistor portions 1311-1341 in the second direction D2, as shown in Fig. 6. Also, in each of the multiple magnetoresistive patterns 131-134, outer edges 201, 202 of the second resistor portions 1312-1342 in the first direction D1 are formed in a shape that follows an arc a2 centered at point P6 on the center line Ax2 of the second resistor portions 1312-1342 in the second direction D2, as shown in Fig. 6.

[0085] In the magnetic sensor according to the second embodiment, as described above, in each of the plurality of magnetoresistive patterns 131 to 134, the outer edges 101, 102 of the first resistor portions 1311 to 1341 in the first direction D1 are formed in a shape that follows an arc a1 centered at point P5 on the center line Ax2 of the first resistor portions 1311 to 1341 in the second direction D2. Furthermore, in the magnetic sensor according to the second embodiment, as described above, the outer edges 201, 202 of the second resistor portions 1312 to 1342 in the first direction D1 are formed in a shape that follows an arc a2 centered at point P6 on the center line Ax2 of the second resistor portions 1312 to 1342 in the second direction D2. This makes it possible to eliminate corners that have the greatest effect on the positional fluctuation of the detection target 2, and thus minimize errors in the positional fluctuation even when the magnetic sensor is oblique to the detection target 2, for example. As a result, it is possible to suppress a decrease in the accuracy of detecting the position of the detection target 2.

[0086] (2)Details The magnetic sensor according to the second embodiment will be described in detail below with reference to FIG.

[0087] (2.1) Example of layout of magnetic resistance pattern, wiring pattern and terminal First, an example of the arrangement of the multiple magnetoresistive pattern portions 131-134, first to fourth wiring pattern portions 135-138, and four terminals 21-24 of the magnetic sensor according to the second embodiment will be described with reference to Fig. 6. In Fig. 6, the multiple magnetoresistive pattern portions 131-134, first to fourth wiring pattern portions 135-138, and four terminals 21-24 are hatched with dots to make them easy to identify. In Fig. 6, first to fourth connection pattern portions 139-142, which will be described later, are also hatched with dots.

[0088] In the magnetic sensor of embodiment 2, the only difference between the magnetic sensor 1 of embodiment 1 and the magnetic sensor 1 of embodiment 1 is the outer edge shape of each of the multiple first resistance sections 1311, 1321, 1331, 1341 and the multiple second resistance sections 1312, 1322, 1332, 1342. However, the arrangement of the multiple magnetic resistance pattern sections 131 to 134, the first to fourth wiring pattern sections 135 to 138, and the four terminals 21 to 24 is the same, so a description thereof will be omitted here.

[0089] 6 , in the magnetic sensor according to the second embodiment, the first resistor portion 1311 and the second resistor portion 1312 in the first magnetic resistance pattern portion 131 are spaced apart by a distance L1, which is half the magnetization period λ of the detection target 2, in the first direction D1. The distance L1 is the distance between a center line Ax11 of the first resistor portion 1311 in the first direction D1 and a center line Ax12 of the second resistor portion 1312 in the first direction D1. That is, the distance L1 is the length of a line segment connecting the center points of the first resistor portion 1311 and the second resistor portion 1312. Here, the center point of the first resistor portion 1311 is the intersection of the center line Ax11 of the first resistor portion 1311 in the first direction D1 and the center line Ax2 of the first resistor portion 1311 in the second direction D2. The center point of the second resistor 1312 is the intersection of a center line Ax12 of the second resistor 1312 in the first direction D1 and a center line Ax2 of the second resistor 1312 in the second direction D2.

[0090] Similarly, in the second magnetic resistance pattern 132, the first resistance portion 1321 and the second resistance portion 1322 are arranged in the first direction D1 with a distance L1 between them that is half the magnetization period λ of the detection target 2. The distance L1 is the distance between a center line Ax21 of the first resistance portion 1321 in the first direction D1 and a center line Ax22 of the second resistance portion 1322 in the first direction D1. In other words, the distance L1 is the length of a line segment connecting the center points of the first resistance portion 1321 and the second resistance portion 1322. Here, the center point of the first resistance portion 1321 is the intersection of the center line Ax21 of the first resistance portion 1321 in the first direction D1 and the center line Ax2 of the first resistance portion 1321 in the second direction D2. The center point of the second resistor portion 1322 is the intersection of the center line Ax22 of the second resistor portion 1322 in the first direction D1 and the center line Ax2 of the second resistor portion 1322 in the second direction D2.

[0091] Furthermore, in the third magnetic resistance pattern 133, the first resistance portion 1331 and the second resistance portion 1332 are arranged in the first direction D1 with a distance L1 between them that is half the magnetization period λ of the detection target 2. The distance L1 is the distance between a center line Ax31 of the first resistance portion 1331 in the first direction D1 and a center line Ax32 of the second resistance portion 1332 in the first direction D1. That is, the distance L1 is the length of a line segment connecting the center points of the first resistance portion 1331 and the second resistance portion 1332. Here, the center point of the first resistance portion 1331 is the intersection of the center line Ax31 of the first resistance portion 1331 in the first direction D1 and the center line Ax2 of the first resistance portion 1331 in the second direction D2. The center point of the second resistor portion 1332 is the intersection of a center line Ax32 of the second resistor portion 1332 in the first direction D1 and a center line Ax2 of the second resistor portion 1332 in the second direction D2.

[0092] In the fourth magnetic resistance pattern 134, the first resistance portion 1341 and the second resistance portion 1342 are arranged in the first direction D1 with a distance L1 between them that is half the magnetization period λ of the detection target 2. The distance L1 is the distance between a center line Ax41 of the first resistance portion 1341 in the first direction D1 and a center line Ax42 of the second resistance portion 1342 in the first direction D1. That is, the distance L1 is the length of a line segment connecting the center points of the first resistance portion 1341 and the second resistance portion 1342. Here, the center point of the first resistance portion 1341 is the intersection of the center line Ax41 of the first resistance portion 1341 in the first direction D1 and the center line Ax2 of the first resistance portion 1341 in the second direction D2. The center point of the second resistor portion 1342 is the intersection of a center line Ax42 of the second resistor portion 1342 in the first direction D1 and a center line Ax2 of the second resistor portion 1342 in the second direction D2.

[0093] As shown in FIG. 6 , the first wiring pattern portion 135 connects the first magnetic resistance pattern portion 131 and the power supply terminal 21, and the third magnetic resistance pattern portion 133 and the power supply terminal 21. The first wiring pattern portion 135 is formed in a rectangular shape when viewed from a plane in the third direction D3, and a first end portion is connected to the power supply terminal 21. A second end portion of the first wiring pattern portion 135 is connected to a first end portion of a first resistor portion 1311 of the first magnetic resistance pattern portion 131 and a first end portion of a first resistor portion 1331 of the third magnetic resistance pattern portion 133. A second end portion of the first resistor portion 1311 of the first magnetic resistance pattern portion 131 is connected to a second end portion of a second resistor portion 1312 via a first connection pattern portion 139. A first end portion of the second resistor portion 1312 of the first magnetic resistance pattern portion 131 is connected to the third wiring pattern portion 137. A second end of the first resistor portion 1331 of the third magnetic resistance pattern portion 133 is connected to a second end of the second resistor portion 1332 via the third connection pattern portion 141. A first end of the second resistor portion 1332 of the third magnetic resistance pattern portion 133 is connected to the fourth wiring pattern portion 138.

[0094] As shown in FIG. 6 , the second wiring pattern portion 136 connects the second magnetic resistance pattern portion 132 and the ground terminal 22, and the fourth magnetic resistance pattern portion 134 and the ground terminal 22. The second wiring pattern portion 136 is formed in a rectangular shape when viewed from a plane in the third direction D3, and a first end portion thereof is connected to the ground terminal 22. A second end portion of the second wiring pattern portion 136 is connected to a first end portion of a first resistor portion 1321 of the second magnetic resistance pattern portion 132 and a first end portion of a first resistor portion 1341 of the fourth magnetic resistance pattern portion 134. A second end portion of the first resistor portion 1321 of the second magnetic resistance pattern portion 132 is connected to a second end portion of a second resistor portion 1322 via a second connection pattern portion 140. A first end portion of the second resistor portion 1322 of the second magnetic resistance pattern portion 132 is connected to the third wiring pattern portion 137. A second end of the first resistor portion 1341 of the fourth magnetic resistance pattern portion 134 is connected to a second end of the second resistor portion 1342 via the fourth connection pattern portion 142. A first end of the second resistor portion 1342 of the fourth magnetic resistance pattern portion 134 is connected to the fourth wiring pattern portion 138.

[0095] 6 , the third wiring pattern portion 137 connects the first magnetic resistance pattern portion 131 and the first output terminal 23, and the second magnetic resistance pattern portion 132 and the first output terminal 23. The third wiring pattern portion 137 is formed in an L-shape when viewed from a plane in the third direction D3, and a first end portion thereof is connected to the first output terminal 23. As described above, the second end portion of the third wiring pattern portion 137 is connected to a first end portion of the second resistor portion 1312 of the first magnetic resistance pattern portion 131 and a first end portion of the second resistor portion 1322 of the second magnetic resistance pattern portion 132.

[0096] 6, the fourth wiring pattern portion 138 connects between the third magnetic resistance pattern portion 133 and the second output terminal 24, and between the fourth magnetic resistance pattern portion 134 and the second output terminal 24. The fourth wiring pattern portion 138 is formed in an L-shape when viewed from a plane in the third direction D3, and a first end portion thereof is connected to the second output terminal 24. As described above, the second end portion of the fourth wiring pattern portion 138 is connected to a first end portion of the second resistor portion 1332 of the third magnetic resistance pattern portion 133 and a first end portion of the second resistor portion 1342 of the fourth magnetic resistance pattern portion 134.

[0097] (2.2) Shape of the magnetic resistance pattern Next, the shapes of the plurality of magnetoresistive patterns 131 to 134 will be described with reference to FIG.

[0098] As described above, the first magnetic resistance pattern 131 includes the first resistor portion 1311 and the second resistor portion 1312. As described above, the second magnetic resistance pattern 132 includes the first resistor portion 1321 and the second resistor portion 1322. As described above, the third magnetic resistance pattern 133 includes the first resistor portion 1331 and the second resistor portion 1332. As described above, the fourth magnetic resistance pattern 134 includes the first resistor portion 1341 and the second resistor portion 1342. Of the multiple magnetic resistance patterns 131 to 134, the following will focus on the first magnetic resistance pattern 131 and the fourth magnetic resistance pattern 134. However, the same applies to the second magnetic resistance pattern 132 and the third magnetic resistance pattern 133, and therefore their description will be omitted here.

[0099] The outer edge 101 (the outer edge on the left side in FIG. 6) of the first resistance portion 1311 of the first magnetic resistance pattern 131 in the first direction D1 is formed in a shape that follows an arc a11. The arc a11 is an arc of radius r11 centered at point P51 on the center line Ax2. The center line Ax2 is the center line of the first resistance portion 1311 in the second direction D2. Here, it is preferable that the radius r11 of the arc a11 be 30% or more and 70% or less of the magnetization period λ of the detection object 2.

[0100] The outer edge 201 (the outer edge on the right side in FIG. 6) of the second resistance portion 1312 of the first magnetic resistance pattern 131 in the first direction D1 is formed in a shape that follows a circular arc a21. The circular arc a21 is an arc of radius r21 centered at point P61 on the center line Ax2. The center line Ax2 is the center line of the second resistance portion 1312 in the second direction D2. Like the radius r11 of the arc a11, the radius r21 of the arc a21 is preferably 30% or more and 70% or less of the magnetization period λ of the detection object 2. Furthermore, the radius r21 of the arc a21 may be the same as or different from the radius r11 of the arc a11.

[0101] Furthermore, the outer edge 102 (the outer edge on the right side in FIG. 6 ) of the first resistance portion 1341 of the fourth magnetic resistance pattern 134 in the first direction D1 is formed in a shape that follows a circular arc a12. The circular arc a12 is an arc with a radius r12 centered at point P52 on the center line Ax2. The center line Ax2 is the center line of the first resistance portion 1341 in the second direction D2. Like the radius r11 of the arc a11, the radius r12 of the arc a12 is preferably 30% or more and 70% or less of the magnetization period λ of the detection object 2. Furthermore, the radius r12 of the arc a12 may be the same as or different from the radius r11 of the arc a11. Furthermore, the radius r12 of the arc a12 may be the same as or different from the radius r21 of the arc a21.

[0102] The outer edge 202 (the outer edge on the left side in FIG. 6 ) of the second resistance portion 1342 of the fourth magnetic resistance pattern 134 in the first direction D1 is formed in a shape that follows a circular arc a22. The circular arc a22 is an arc with a radius r22 centered at point P62 on the center line Ax2. The center line Ax2 is the center line of the second resistance portion 1342 in the second direction D2. Like the radius r11 of the arc a11, the radius r22 of the arc a22 is preferably 30% or more and 70% or less of the magnetization period λ of the detection target 2. The radius r22 of the arc a22 may be the same as or different from the radius r11 of the arc a11. The radius r22 of the arc a22 may be the same as or different from the radius r21 of the arc a21. Furthermore, the radius r22 of the arc a22 may be the same as or different from the radius r12 of the arc a12.

[0103] Furthermore, it is preferable that the outer edge (the outer edge on the right in FIG. 6) of the first magnetic resistance pattern 131 opposite the first resistance portion 1311 in the first direction D1 also has a shape along an arc with a radius of 30% to 70% of the magnetization period λ of the detection target 2. The same is true for the outer edge (the outer edge on the left in FIG. 6) of the first magnetic resistance pattern 131 opposite the second resistance portion 1312 in the first direction D1, the outer edge (the outer edge on the left in FIG. 6) of the fourth magnetic resistance pattern 134 opposite the first resistance portion 1341 in the first direction D1, and the outer edge (the edge on the right in FIG. 6) of the fourth magnetic resistance pattern 134 opposite the second resistance portion 1342 in the first direction D1.

[0104] 6, in the magnetic sensor according to the second embodiment, a plurality of (e.g., three) protrusions, which are formed by partly protruding the first resistance portion 1311 of the first magnetic resistance pattern portion 131 along the first direction D1, are arranged along the second direction D2, and the outer edges of the plurality of protrusions form the outer edge 101. In the magnetic sensor according to the second embodiment, two of the plurality of protrusions are located on one end side in the second direction D2 (upper side in FIG. 6), and the remaining protrusion is located on the other end side in the second direction D2 (lower side in FIG. 6).

[0105] 6, in the magnetic sensor according to the second embodiment, a plurality of (e.g., three) protrusions, which are formed by protruding a part of the second resistive portion 1312 of the first magnetic resistance pattern portion 131 along the first direction D1, are arranged along the second direction D2, and the outer edges of the plurality of protrusions form the outer edge 201. In the magnetic sensor according to the second embodiment, two of the plurality of protrusions are located on one end side in the second direction D2 (lower side in FIG. 6), and the remaining protrusion is located on the other end side in the second direction D2 (upper side in FIG. 6).

[0106] 6, in the magnetic sensor according to the second embodiment, a plurality of (e.g., three) protrusions, which are formed by partly protruding the first resistance portion 1341 of the fourth magnetic resistance pattern 134 along the first direction D1, are arranged along the second direction D2, and the outer edges of the plurality of protrusions form the outer edge 102. In the magnetic sensor according to the second embodiment, two of the plurality of protrusions are located on one end side in the second direction D2 (lower side in FIG. 6), and the remaining protrusion is located on the other end side in the second direction D2 (upper side in FIG. 6).

[0107] 6, in the magnetic sensor according to the second embodiment, a plurality of (e.g., three) protrusions, which are formed by partly protruding the second resistive portion 1342 of the fourth magnetic resistance pattern 134 along the first direction D1, are arranged along the second direction D2, and the outer edges of the plurality of protrusions form the outer edge 202. In the magnetic sensor according to the second embodiment, two of the plurality of protrusions are located on one end side in the second direction D2 (upper side in FIG. 6), and the remaining protrusion is located on the other end side in the second direction D2 (lower side in FIG. 6).

[0108] (3) Effects In the magnetic sensor according to the second embodiment, as described above, in each of the plurality of magnetoresistive patterns 131 to 134, the outer edges 101, 102 of the first resistor portions 1311 to 1341 in the first direction D1 are formed in a shape that follows an arc a1 centered at point P5 on the center line Ax2 of the first resistor portions 1311 to 1341 in the second direction D2. Furthermore, in the magnetic sensor according to the second embodiment, as described above, the outer edges 201, 202 of the second resistor portions 1312 to 1342 in the first direction D1 are formed in a shape that follows an arc a2 centered at point P6 on the center line Ax2 of the second resistor portions 1312 to 1342 in the second direction D2. This makes it possible to eliminate corners that have the greatest effect on the positional fluctuation of the detection target 2, and thus minimize errors in the positional fluctuation even when the magnetic sensor is oblique to the detection target 2, for example. As a result, it is possible to suppress a decrease in the accuracy of detecting the position of the detection target 2.

[0109] Furthermore, in the magnetic sensor according to the second embodiment, as described above, in each of the multiple magnetic resistance patterns 131 to 134, the first resistance portions 1311, 1321, 1331, and 1341 and the second resistance portions 1312, 1322, 1332, and 1342 are arranged at a distance L1, which is half the magnetization period λ, in the first direction D1. This makes it possible to make the direction of the magnetic force acting on the first resistance portions 1311, 1321, 1331, and 1341 opposite to the direction of the magnetic force acting on the second resistance portions 1312, 1322, 1332, and 1342.

[0110] Furthermore, in the magnetic sensor according to the second embodiment, as described above, each of the first resistors 1311, 1321, 1331, and 1341 and the second resistors 1312, 1322, 1332, and 1342 is formed in a meandering shape when viewed from above in the third direction D3, which makes it possible to make the lengths of the first resistors 1311, 1321, 1331, and 1341 and the second resistors 1312, 1322, 1332, and 1342 equal to each other.

[0111] In the magnetic sensor according to the second embodiment, as described above, the inner resistors 1312, 1321, 1322, 1331, 1332, and 1342 are formed to have the same shape when viewed from above in the third direction D3, which allows the fluctuations in the resistance values ​​of the inner resistors 1312, 1321, 1322, 1331, 1332, and 1342 to behave in the same manner.

[0112] (4) Variations The second embodiment is merely one of various embodiments of the present disclosure. Various modifications of the second embodiment are possible depending on the design, etc., as long as the object of the present disclosure can be achieved. Modifications of the second embodiment are listed below. The modifications described below can be applied in appropriate combinations.

[0113] (4.1) Variation 1 A magnetic sensor according to a first modification of the second embodiment will be described with reference to FIG.

[0114] The magnetic sensor according to Modification 1 differs from the magnetic sensor according to Embodiment 2 in that the shapes of the plurality of first resistance portions 1311, 1321, 1331, 1341 and the plurality of second resistance portions 1312, 1322, 1332, 1342 in the plurality of magnetic resistance patterns 131 to 134 are different from each other. The connection relationships between the plurality of first resistance portions 1311, 1321, 1331, 1341 and the plurality of second resistance portions 1312, 1322, 1332, 1342 are the same as those in the magnetic sensor according to Embodiment 2, and detailed description thereof will be omitted here.

[0115] In the magnetic sensor of variant example 1, as shown in Figure 7, in the first direction D1, from left to right, the first resistance portion 1311 of the first magnetic resistance pattern portion 131, the first resistance portion 1331 of the third magnetic resistance pattern portion 133, the second resistance portion 1312 of the first magnetic resistance pattern portion 131, the second resistance portion 1332 of the third magnetic resistance pattern portion 133, the second resistance portion 1322 of the second magnetic resistance pattern portion 132, the second resistance portion 1342 of the fourth magnetic resistance pattern portion 134, the first resistance portion 1321 of the second magnetic resistance pattern portion 132, and the first resistance portion 1341 of the fourth magnetic resistance pattern portion 134 are arranged in this order.

[0116] The outer edge 103 (the outer edge on the left side in FIG. 7) of the first resistance portion 1311 of the first magnetic resistance pattern 131 in the first direction D1 is formed in a shape that follows an arc a13. The arc a13 is an arc of radius r13 centered at point P53 on the center line Ax2. The center line Ax2 is the center line of the first resistance portion 1311 in the second direction D2. Here, it is preferable that the radius r13 of the arc a13 be 30% or more and 70% or less of the magnetization period λ of the detection object 2.

[0117] The outer edge 203 (the outer edge on the right side in FIG. 7) of the second resistance portion 1312 of the first magnetic resistance pattern 131 in the first direction D1 is formed in a shape that follows the arc a23. The arc a23 is an arc of radius r23 centered at point P63 on the center line Ax2. The center line Ax2 is the center line of the second resistance portion 1312 in the second direction D2. Like the radius r13 of the arc a13, the radius r23 of the arc a23 is preferably 30% or more and 70% or less of the magnetization period λ of the detection object 2. Furthermore, the radius r23 of the arc a23 may be the same as or different from the radius r13 of the arc a13.

[0118] Furthermore, the outer edge 104 (the outer edge on the right side in FIG. 7) of the first resistance portion 1341 of the fourth magnetic resistance pattern 134 in the first direction D1 is formed in a shape that follows an arc a14. The arc a14 is an arc with a radius r14 centered at point P54 on the center line Ax2. The center line Ax2 is the center line of the first resistance portion 1341 in the second direction D2. Like the radius r13 of the arc a13, the radius r14 of the arc a14 is preferably 30% or more and 70% or less of the magnetization period λ of the detection target 2. Furthermore, the radius r14 of the arc a14 may be the same as or different from the radius r13 of the arc a13. Furthermore, the radius r14 of the arc a14 may be the same as or different from the radius r23 of the arc a23.

[0119] The outer edge 204 (the outer edge on the left side in FIG. 7) of the second resistor portion 1342 of the fourth magnetic resistance pattern 134 in the first direction D1 is formed in a shape that follows the arc a24. The arc a24 is an arc with a radius r24 centered at point P64 on the center line Ax2. The center line Ax2 is the center line of the second resistor portion 1342 in the second direction D2. Like the radius r13 of the arc a13, the radius r24 of the arc a24 is preferably 30% or more and 70% or less of the magnetization period λ of the detection target 2. The radius r24 of the arc a24 may be the same as or different from the radius r13 of the arc a13. The radius r24 of the arc a24 may be the same as or different from the radius r23 of the arc a23. Furthermore, the radius r24 of the arc a24 may be the same as or different from the radius r14 of the arc a14.

[0120] Furthermore, it is preferable that the outer edge (the outer edge on the right in FIG. 7) of the first magnetic resistance pattern 131 opposite the first resistance portion 1311 in the first direction D1 also has a shape along an arc with a radius of 30% to 70% of the magnetization period λ of the detection target 2. The same is true for the outer edge (the outer edge on the left in FIG. 7) of the first magnetic resistance pattern 131 opposite the second resistance portion 1312 in the first direction D1, the outer edge (the outer edge on the left in FIG. 7) of the fourth magnetic resistance pattern 134 opposite the first resistance portion 1341 in the first direction D1, and the outer edge (the edge on the right in FIG. 7) of the fourth magnetic resistance pattern 134 opposite the second resistance portion 1342 in the first direction D1.

[0121] 7, in the magnetic sensor according to the first modification, the outer edge 103 is formed by the outer edge of one protruding portion formed by partly protruding the first resistor portion 1311 of the first magnetic resistance pattern portion 131 in the first direction D1. The outer edges 203, 104, and 204 are also formed by the outer edge of one protruding portion formed by partly protruding the second resistor portion 1312 of the first magnetic resistance pattern portion 131 in the first magnetic resistance pattern portion 134 in the first magnetic resistance pattern portion 134, the first resistor portion 1341 of the fourth magnetic resistance pattern portion 134 in the second magnetic resistance pattern portion 134, and the second resistor portion 1342 of the fourth magnetic resistance pattern portion 134 in the first direction D1.

[0122] In the magnetic sensor according to the first modification, like the magnetic sensor according to the second embodiment, it is possible to suppress a decrease in the accuracy of detecting the position of the detection target 2.

[0123] (4.2) Variation 2 A magnetic sensor according to a second modification of the second embodiment will be described with reference to FIG.

[0124] The magnetic sensor according to Modification 2 differs from the magnetic sensor according to Embodiment 2 in that the shapes of the plurality of first resistance portions 1311, 1321, 1331, 1341 and the plurality of second resistance portions 1312, 1322, 1332, 1342 in the plurality of magnetic resistance patterns 131 to 134 are different from each other. The connection relationships between the plurality of first resistance portions 1311, 1321, 1331, 1341 and the plurality of second resistance portions 1312, 1322, 1332, 1342 are the same as those in the magnetic sensor according to Embodiment 2, and detailed description thereof will be omitted here.

[0125] In the magnetic sensor of variant example 2, as shown in Figure 8, in the first direction D1, from left to right, the first resistance portion 1311 of the first magnetic resistance pattern portion 131, the first resistance portion 1331 of the third magnetic resistance pattern portion 133, the second resistance portion 1312 of the first magnetic resistance pattern portion 131, the second resistance portion 1332 of the third magnetic resistance pattern portion 133, the second resistance portion 1322 of the second magnetic resistance pattern portion 132, the second resistance portion 1342 of the fourth magnetic resistance pattern portion 134, the first resistance portion 1321 of the second magnetic resistance pattern portion 132, and the first resistance portion 1341 of the fourth magnetic resistance pattern portion 134 are arranged in this order.

[0126] The outer edge 105 (the outer edge on the left side in FIG. 8) of the first resistance portion 1311 of the first magnetic resistance pattern 131 in the first direction D1 is formed in a shape that follows an arc a15. The arc a15 is an arc of radius r15 centered at point P55 on the center line Ax2. The center line Ax2 is the center line of the first resistance portion 1311 in the second direction D2. Here, the radius r15 of the arc a15 is preferably 30% or more and 70% or less of the magnetization period λ of the detection object 2.

[0127] The outer edge 205 (the outer edge on the right side in FIG. 8 ) of the second resistance portion 1312 of the first magnetic resistance pattern 131 in the first direction D1 is formed in a shape that follows an arc a25. The arc a25 is an arc with a radius r25 centered at point P65 on the center line Ax2. The center line Ax2 is the center line of the second resistance portion 1312 in the second direction D2. Like the radius r15 of the arc a15, the radius r25 of the arc a25 is preferably 30% or more and 70% or less of the magnetization period λ of the detection object 2. Furthermore, the radius r25 of the arc a25 may be the same as or different from the radius r15 of the arc a15.

[0128] Furthermore, the outer edge 106 (the outer edge on the right side in FIG. 8 ) of the first resistance portion 1341 of the fourth magnetic resistance pattern 134 in the first direction D1 is formed in a shape that follows a circular arc a16. The circular arc a16 is an arc with a radius r16 centered at point P56 on the center line Ax2. The center line Ax2 is the center line of the first resistance portion 1341 in the second direction D2. Like the radius r15 of the arc a15, the radius r16 of the arc a16 is preferably 30% or more and 70% or less of the magnetization period λ of the detection object 2. Furthermore, the radius r16 of the arc a16 may be the same as or different from the radius r15 of the arc a15. Furthermore, the radius r16 of the arc a16 may be the same as or different from the radius r25 of the arc a25.

[0129] The outer edge 206 (the outer edge on the left side in FIG. 8 ) of the second resistance portion 1342 of the fourth magnetic resistance pattern 134 in the first direction D1 is formed in a shape that follows a circular arc a26. The circular arc a26 is an arc with a radius r26 centered at point P66 on the center line Ax2. The center line Ax2 is the center line of the second resistance portion 1342 in the second direction D2. Like the radius r15 of the arc a15, the radius r26 of the arc a26 is preferably 30% or more and 70% or less of the magnetization period λ of the detection target 2. The radius r26 of the arc a26 may be the same as or different from the radius r15 of the arc a15. The radius r26 of the arc a26 may be the same as or different from the radius r25 of the arc a25. Furthermore, the radius r26 of the arc a26 may be the same as or different from the radius r16 of the arc a16.

[0130] Furthermore, it is preferable that the outer edge (the outer edge on the right in FIG. 8) of the first magnetic resistance pattern 131 opposite the first resistance portion 1311 in the first direction D1 also has a shape along an arc with a radius of 30% to 70% of the magnetization period λ of the detection target 2. The same is true for the outer edge (the outer edge on the left in FIG. 8) of the first magnetic resistance pattern 131 opposite the second resistance portion 1312 in the first direction D1, the outer edge (the outer edge on the left in FIG. 8) of the fourth magnetic resistance pattern 134 opposite the first resistance portion 1341 in the first direction D1, and the outer edge (the edge on the right in FIG. 8) of the fourth magnetic resistance pattern 134 opposite the second resistance portion 1342 in the first direction D1.

[0131] 8, in the magnetic sensor according to the second modification, a plurality of (e.g., three) protrusions, each of which is formed by partly protruding the first resistor 1311 of the first magnetic resistance pattern 131 along the first direction D1, are arranged along the second direction D2, and the outer edges of the plurality of protrusions form the outer edge 105. Also, each of the second resistor 1312 of the first magnetic resistance pattern 131, the first resistor 1341 of the fourth magnetic resistance pattern 134, and the second resistor 1342 of the fourth magnetic resistance pattern 134 has a plurality of (e.g., three) protrusions, each of which is formed by partly protruding along the first direction D1, arranged along the second direction D2, and the outer edges of the plurality of protrusions form the outer edges 205, 106, and 206, respectively.

[0132] In the magnetic sensor according to the second modification, like the magnetic sensor according to the second embodiment, it is possible to suppress a decrease in the accuracy of detecting the position of the detection target 2.

[0133] (Aspect) The present specification discloses the following aspects.

[0134] A magnetic sensor (1) according to a first aspect is a magnetic sensor (1) that detects the position of a detection target (2) based on a change in magnetic field intensity caused by the relative movement of the detection target (2) along a first direction (D1). The magnetic sensor (1) includes a plurality of magnetoresistive pattern portions (131, 132, 133, 134), a first wiring pattern portion (135), and a second wiring pattern portion (136). The plurality of magnetoresistive pattern portions (131, 132, 133, 134) form a bridge circuit. The first wiring pattern portion (135) is connected to a power supply terminal (21). The second wiring pattern portion (136) is connected to a ground terminal (22). Each of the first wiring pattern portion (135) and the second wiring pattern portion (136) is formed of the same material as the plurality of magnetoresistive pattern portions (131, 132, 133, 134). The plurality of magnetic resistance patterns (131, 132, 133, 134) are arranged along a first direction (D1). Each of the plurality of magnetic resistance patterns (131, 132, 133, 134) includes a first resistance portion (1311, 1321, 1331, 1341) and a second resistance portion (1312, 1322, 1332, 1342) connected in series with each other. Each of the plurality of first resistance portions (1311, 1321, 1331, 1341) and the plurality of second resistance portions (1312, 1322, 1332, 1342) in the plurality of magnetic resistance patterns (131, 132, 133, 134) is formed along a second direction (D2) perpendicular to the first direction (D1). The first wiring pattern portion (135) and the second wiring pattern portion (136) each include a first wiring portion (1351, 1361) and a second wiring portion (1352, 1362) located on both sides of the plurality of magnetoresistive pattern portions (131, 132, 133, 134) in the second direction (D2). One of the two resistor portions (1311, 1341) connects the first wiring portion (1351) and the second wiring portion (1352) of the first wiring pattern portion (135). The other of the two resistor portions (1311, 1341) connects the first wiring portion (1361) and the second wiring portion (1362) of the second wiring pattern portion (136).The two resistor units (1311, 1341) are located at both ends in the first direction (D1) of the plurality of first resistor units (1311, 1321, 1331, 1341) and the plurality of second resistor units (1312, 1322, 1332, 1342).

[0135] According to this aspect, it is possible to suppress a decrease in the detection accuracy of the position of the detection target (2) while suppressing an increase in the number of manufacturing steps.

[0136] In the magnetic sensor (1) according to the second aspect, in the first aspect, each of the plurality of first resistance portions (1311, 1321, 1331, 1341) and the plurality of second resistance portions (1312, 1322, 1332, 1342) is arranged along a first direction (D1). In each of the plurality of magnetic resistance patterns (131, 132, 133, 134), the outer edges (101 to 106) of the first resistance portions (1311, 1321, 1331, 1341) in the first direction (D1) are formed in a shape that follows an arc (a1) centered at a point (P5) on a center line (Ax2) of the first resistance portion (1311, 1321, 1331, 1341) in the second direction (D2). The outer edges (201 to 206) of the second resistance portions (1312, 1322, 1332, 1342) in the first direction (D1) are formed in a shape that follows an arc (a2) centered at point (P6) on the center line (Ax2) of the second resistance portions (1312, 1322, 1332, 1342) in the second direction (D2).

[0137] According to this aspect, it is possible to suppress a decrease in the detection accuracy of the position of the detection target (2).

[0138] In the magnetic sensor (1) according to the third aspect, in the second aspect, the detection target (2) is magnetized in a first direction (D1) with a predetermined magnetization period (λ). In each of the plurality of magnetic resistance patterns (131, 132, 133, 134), the radius (r1) of the arc (a1) of the first resistance portions (1311, 1321, 1331, 1341) and the radius (r2) of the arc (a2) of the second resistance portions (1312, 1322, 1332, 1342) are 70% or less of the magnetization period (λ).

[0139] According to this aspect, it is possible to suppress a decrease in the detection accuracy of the position of the detection target (2).

[0140] In the magnetic sensor (1) according to the fourth aspect, in the third aspect, the radius (r1, r2) is 30% or more of the magnetization period (λ).

[0141] In the magnetic sensor (1) according to the fifth aspect, in the third or fourth aspect, in each of the multiple magnetic resistance pattern portions (131, 132, 133, 134), the first resistance portion (1311, 1321, 1331, 1341) and the second resistance portion (1312, 1322, 1332, 1342) are arranged at a distance (L1) of 1 / 2 the magnetization period (λ) in the first direction (D1).

[0142] According to this aspect, the direction of the magnetic force applied to the first resistors (1311, 1321, 1331, 1341) and the direction of the magnetic force applied to the second resistors (1312, 1322, 1332, 1342) can be made opposite to each other.

[0143] In a magnetic sensor (1) according to a sixth aspect, in any one of the first to fifth aspects, each of the plurality of first resistance sections (1311, 1321, 1331, 1341) and second resistance sections (1312, 1322, 1332, 1342) is formed in a meandering shape when viewed from a third direction (D3). The third direction (D3) is a direction perpendicular to both the first direction (D1) and the second direction (D2).

[0144] According to this aspect, it is possible to make the lengths of the resistor portions (1311, 1312, 1321, 1322, 1331, 1332, 1341, 1342) equal.

[0145] In the magnetic sensor (1) according to the seventh aspect, in any one of the first to sixth aspects, at least the inner resistance portions (1312, 1321, 1322, 1331, 1332, 1342) of the plurality of first resistance portions (1311, 1321, 1331, 1341) and the plurality of second resistance portions (1312, 1322, 1332, 1342) are formed to have the same shape when viewed from a third direction (D3). The third direction (D3) is a direction perpendicular to both the first direction (D1) and the second direction (D2).

[0146] According to this aspect, it is possible to make the fluctuations in the resistance values ​​of the inner resistor portions (1312, 1321, 1322, 1331, 1332, 1342) behave in the same manner, and as a result, it is possible to reduce errors due to waveform distortion.

[0147] A magnetic sensor (1) according to an eighth aspect is any one of the first to seventh aspects, and includes four magnetic resistance patterns (131, 132, 133, 134) as the plurality of magnetic resistance patterns (131, 132, 133, 134). The bridge circuit is a full bridge circuit configured with the four magnetic resistance patterns (131, 132, 133, 134).

[0148] The magnetic sensor (1) according to the ninth aspect is the same as that according to the eighth aspect, but further includes a third wiring pattern portion (137) and a fourth wiring pattern portion (138). The third wiring pattern portion (137) is connected to the first output terminal (23). The fourth wiring pattern portion (138) is connected to the second output terminal (24). The third wiring pattern portion (137) is connected to a connection point (P1) between two of the four magnetic resistance patterns (131, 132) that are connected in series. The fourth wiring pattern portion (138) is connected to a connection point (P2) between the remaining two of the four magnetic resistance patterns (131, 132, 133, 134) that are different from the two magnetic resistance patterns (131, 132).

[0149] The magnetic sensor (1) according to a tenth aspect is the same as that according to the eighth aspect, but further includes a third wiring pattern (137) and a fourth wiring pattern (138). The third wiring pattern (137) is connected to the first output terminal (23). The fourth wiring pattern (138) is connected to the second output terminal (24). The four magnetic resistance patterns (131, 132, 133, 134) include a first magnetic resistance pattern (131) and a second magnetic resistance pattern (132) connected in series with each other, and a third magnetic resistance pattern (133) and a fourth magnetic resistance pattern (134) connected in series with each other. The first wiring pattern (135) is connected to an end of the first magnetic resistance pattern (131) opposite to the second magnetic resistance pattern (132) side and an end of the third magnetic resistance pattern (133) opposite to the fourth magnetic resistance pattern (134) side. The second wiring pattern portion (136) is connected to an end of the second magnetic resistance pattern portion (132) opposite to the first magnetic resistance pattern portion (131) and an end of the fourth magnetic resistance pattern portion (134) opposite to the third magnetic resistance pattern portion (133). The third wiring pattern portion (137) is connected to the first magnetic resistance pattern portion (131) and the second magnetic resistance pattern portion (132). The fourth wiring pattern portion (138) is connected to the third magnetic resistance pattern portion (133) and the fourth magnetic resistance pattern portion (134).

[0150] A magnetic sensor (1) according to an eleventh aspect is a magnetic sensor (1) that detects the position of a detection target (2) based on a change in magnetic field intensity caused by the relative movement of the detection target (2) along a first direction (D1). The magnetic sensor (1) includes a plurality of magnetoresistive patterns (131, 132, 133, 134). Each of the plurality of magnetoresistive patterns (131, 132, 133, 134) includes a first resistor (1311, 1321, 1331, 1341) and a second resistor (1312, 1322, 1332, 1342) connected in series with each other. Each of the first resistance portions (1311, 1321, 1331, 1341) and the second resistance portions (1312, 1322, 1332, 1342) in the magnetoresistive pattern portions (131, 132, 133, 134) is formed along a second direction (D2) perpendicular to the first direction (D1). The first resistance portions (1311, 1321, 1331, 1341) and the second resistance portions (1312, 1322, 1332, 1342) are arranged along the first direction (D1). In each of the multiple magnetic resistance pattern portions (131, 132, 133, 134), the outer edges (101 to 106) of the first resistance portions (1311, 1321, 1331, 1341) in the first direction (D1) are formed in a shape that follows an arc (a1) centered at point (P5) on the center line (Ax2) of the first resistance portions (1311, 1321, 1331, 1341) in the second direction (D2). In addition, in each of the multiple magnetic resistance pattern portions (131, 132, 133, 134), the outer edges (201 to 206) of the second resistance portions (1312, 1322, 1332, 1342) in the first direction (D1) are formed in a shape that follows an arc (a2) centered on point (P6) on the center line (Ax2) of the second resistance portions (1312, 1322, 1332, 1342) in the second direction (D2).

[0151] According to this aspect, it is possible to suppress a decrease in the detection accuracy of the position of the detection target (2).

[0152] The configurations according to the second to tenth aspects are not essential for the magnetic sensor (1) and can be omitted as appropriate. [Explanation of symbols]

[0153] 1 Magnetic sensor 2. Detection target 21 Power terminal 22 Ground terminal 23 First output terminal 24 Second output terminal 101~106 Outer edge of first resistor 201~206 Outer edge of second resistor 131 First magnetic resistance pattern portion (magnetic resistance pattern portion) 132 Second magnetic resistance pattern portion (magnetic resistance pattern portion) 133 Third magnetic resistance pattern portion (magnetic resistance pattern portion) 134 Fourth magnetic resistance pattern portion (magnetic resistance pattern portion) 135 First wiring pattern section 136 Second wiring pattern section 137 Third wiring pattern section 138 4th wiring pattern section 1311,1321,1331,1341 1st resistance section 1312,1322,1332,1342 2nd resistor section 1351,1361 1st wiring section 1352,1362 2nd wiring section a1, a11~a16 Arc a2, a21~a26 Arc Ax2 center line D1 1st direction D2 2nd direction D3 Third direction P1,P2 connection point L1 distance P5,P51~P56 points P6,P61~P66 points r1,r11~r16 radius r2,r21~r26 radius λ Magnetization period

Claims

1. A magnetic sensor that detects a position of a detection target based on a change in magnetic field intensity caused by relative movement of the detection target along a first direction, a plurality of magnetic resistance patterns forming a bridge circuit; a first wiring pattern portion connected to a power supply terminal; a second wiring pattern portion connected to the ground terminal, each of the first wiring pattern portion and the second wiring pattern portion is formed of the same material as the plurality of magnetoresistive pattern portions; the plurality of magnetic resistance patterns are arranged along the first direction, each of the plurality of magnetic resistance patterns includes a first resistance portion and a second resistance portion connected in series with each other; each of the first resistance portions and the second resistance portions in the plurality of magnetic resistance pattern portions is formed along a second direction perpendicular to the first direction; each of the first wiring pattern portion and the second wiring pattern portion includes a first wiring portion and a second wiring portion located on both sides of the plurality of magnetoresistive pattern portions in the second direction; one of the two resistance portions located at both ends in the first direction among the plurality of first resistance portions and the plurality of second resistance portions connects the first wiring portion and the second wiring portion of the first wiring pattern portion; the other of the two resistor portions connects the first wiring portion and the second wiring portion of the second wiring pattern portion, the plurality of first resistance portions and the plurality of second resistance portions are aligned along the first direction, In each of the plurality of magnetoresistive patterns, an outer edge of the first resistor portion in the first direction is formed in a shape along an arc having a center at a point on a center line of the first resistor portion in the second direction; an outer edge of the second resistor portion in the first direction is formed in a shape along an arc having a center at a point on a center line of the second resistor portion in the second direction; Magnetic sensor.

2. The detection object is magnetized in the first direction at a predetermined magnetization period, the radius of the arc of the first resistor portion and the radius of the arc of the second resistor portion in each of the plurality of magnetic resistance patterns are 70% or less of the magnetization period; The magnetic sensor according to claim 1 .

3. The radius is 30% or more of the magnetization period. The magnetic sensor according to claim 2 .

4. In each of the plurality of magnetic resistance pattern portions, the first resistance portion and the second resistance portion are arranged at a distance of ½ of the magnetization period in the first direction.

4. The magnetic sensor according to claim 2 or 3.

5. Each of the plurality of first resistance portions and the plurality of second resistance portions is formed in a meander shape when viewed from a third direction perpendicular to both the first direction and the second direction. The magnetic sensor according to any one of claims 1 to 4.

6. At least the inner resistance portions of the plurality of first resistance portions and the plurality of second resistance portions are formed to have the same shape when viewed from a third direction perpendicular to both the first direction and the second direction. The magnetic sensor according to any one of claims 1 to 5.

7. The plurality of magnetic resistance pattern portions include four magnetic resistance pattern portions, the bridge circuit is a full bridge circuit configured with the four magnetic resistance pattern portions; The magnetic sensor according to any one of claims 1 to 6.

8. A third wiring pattern portion connected to the first output terminal; a fourth wiring pattern portion connected to the second output terminal, the third wiring pattern portion is connected to a connection point between two of the four magnetic resistance pattern portions that are connected in series with each other, the fourth wiring pattern portion is connected to a connection point of two remaining magnetoresistive pattern portions different from the two magnetoresistive pattern portions among the four magnetoresistive pattern portions; The magnetic sensor according to claim 7.

9. A magnetic sensor that detects the position of a detection target based on a change in magnetic field strength caused by the detection target moving relatively along a first direction, a plurality of magnetic resistance patterns forming a bridge circuit; a first wiring pattern portion connected to a power supply terminal; a second wiring pattern portion connected to a ground terminal; a third wiring pattern portion connected to the first output terminal; a fourth wiring pattern portion connected to the second output terminal, each of the first wiring pattern portion and the second wiring pattern portion is formed of the same material as the plurality of magnetoresistive pattern portions; the plurality of magnetic resistance patterns are arranged along the first direction, each of the plurality of magnetic resistance patterns includes a first resistance portion and a second resistance portion connected in series with each other; each of the first resistance portions and the second resistance portions in the plurality of magnetic resistance pattern portions is formed along a second direction perpendicular to the first direction; each of the first wiring pattern portion and the second wiring pattern portion includes a first wiring portion and a second wiring portion located on both sides of the plurality of magnetoresistive pattern portions in the second direction; one of the two resistance portions located at both ends in the first direction among the plurality of first resistance portions and the plurality of second resistance portions connects the first wiring portion and the second wiring portion of the first wiring pattern portion; the other of the two resistor portions connects the first wiring portion and the second wiring portion of the second wiring pattern portion, The plurality of magnetic resistance patterns include four magnetic resistance patterns, the bridge circuit is a full bridge circuit configured with the four magnetic resistance pattern portions, The four magnetic resistance patterns are: a first magnetic resistance pattern portion and a second magnetic resistance pattern portion connected in series with each other; a third magnetoresistive pattern portion and a fourth magnetoresistive pattern portion connected in series with each other, the first wiring pattern portion is connected to an end portion of the first magnetic resistance pattern portion opposite to the second magnetic resistance pattern portion side and an end portion of the third magnetic resistance pattern portion opposite to the fourth magnetic resistance pattern portion side, the second wiring pattern portion is connected to an end portion of the second magnetic resistance pattern portion opposite to the first magnetic resistance pattern portion side and an end portion of the fourth magnetic resistance pattern portion opposite to the third magnetic resistance pattern portion side, the third wiring pattern portion is connected to the first magnetic resistance pattern portion and the second magnetic resistance pattern portion, the fourth wiring pattern portion is connected to the third magnetic resistance pattern portion and the fourth magnetic resistance pattern portion; Magnetic sensor.

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