resin composition

Abstract

To provide a resin composition which provides a cured product that exhibits good dielectric characteristics, and maintains good mechanical strength when being exposed to a high temperature and high humidity environment.SOLUTION: A resin composition contains a thermosetting resin, an inorganic filler, and an oligophenylene ether skeleton-containing resin X having a glass transition temperature of 25°C or lower, wherein the stud pull adhesion strength of the cured product of the resin composition is 600 kgf / cm2 or more.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to a resin composition, and further to a resin sheet, a semiconductor chip package, a circuit board, and a semiconductor device. [Background technology]

[0002] For next-generation high-speed communications, there is an ever-increasing need for low dielectric loss tangents in insulating materials such as encapsulants for semiconductor chip packages and interlayer insulating materials for circuit boards.Furthermore, with the need for larger substrates, such as wafer-level packaging (WLP) and panel-level packaging (PLP), it is becoming increasingly important to reduce warpage in the overall package structure.

[0003] Conventionally, by incorporating a high amount of inorganic filler or a stress relaxation agent, excellent dielectric properties have been ensured, while low warpage has been achieved through low thermal expansion and stress relaxation capabilities (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2018-168217 Summary of the Invention [Problem to be solved by the invention]

[0005] On the other hand, as the need for larger sizes increases and further reductions in warpage are sought, it is necessary to add more stress relief agents, but this is known to be a trade-off with a low dielectric tangent.Furthermore, adding a large amount of stress relief agents with low glass transition points can cause the resin strength to decrease when exposed to high-temperature, high-humidity environments such as reliability tests (HAST).

[0006] An object of the present invention is to provide a resin composition that can suppress warping, exhibits good dielectric properties, and provides a cured product that maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment. [Means for solving the problem]

[0007] As a result of extensive investigations, the present inventors have found that the above-mentioned problems can be solved by a resin composition having the following configuration, which contains a resin containing a specific oligophenylene ether skeleton (hereinafter also referred to as an "oligophenylene ether skeleton-containing resin") and has a stud-pull adhesion strength after curing within a specific range, and have thereby completed the present invention.

[0008] That is, the present invention includes the following. [1] thermosetting resin, inorganic fillers, and Resin X containing an oligophenylene ether skeleton, having a glass transition temperature of 25°C or less A resin composition comprising: The cured product of the resin composition has a stud-pull adhesion strength of 600 kgf / cm 2 The above is the resin composition. [2] The resin composition according to [1], wherein the content of resin X is 10% by mass or more and less than 60% by mass when the resin component in the resin composition is 100% by mass. [3] The resin composition according to [1] or [2], wherein the content of the inorganic filler is 50% by mass or more when the nonvolatile components in the resin composition are 100% by mass. [4] The resin composition according to any one of [1] to [3], wherein Resin X contains one or more structural units selected from the group consisting of polyolefin structural units, polycarbonate structural units, polyether structural units, polyester structural units, poly(meth)acrylic structural units, and polysiloxane structural units. [5] The resin composition according to any one of [1] to [4], wherein the resin X contains a cyclic imide structure. [6] The resin composition according to any one of [1] to [5], which is used for semiconductor encapsulation. [7] The resin composition according to any one of [1] to [5], which is used for an insulating layer of a circuit board. [8] A cured product of the resin composition according to any one of [1] to [7]. [9] A resin sheet comprising a support and a layer of the resin composition according to any one of [1] to [7] provided on the support.

[10] The resin sheet according to [9], wherein the support is a thermoplastic resin film or a metal foil.

[11] A semiconductor chip package comprising a sealing layer made of a cured product of the resin composition according to any one of [1] to [6].

[12] A circuit board comprising an insulating layer made of a cured product of the resin composition according to any one of [1] to [5] and [7].

[13] A semiconductor device comprising the semiconductor chip package according to

[11] .

[14] A semiconductor device comprising the circuit board according to

[12] . [Effects of the Invention]

[0009] According to the present invention, a novel resin composition can be provided which can suppress warping, exhibits good dielectric properties, and produces a cured product which maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment. DETAILED DESCRIPTION OF THE INVENTION

[0010] <Terminology> As used herein, the term "optionally substituted" in reference to a compound or group means both a case where the hydrogen atoms of the compound or group are not substituted with substituents, and a case where some or all of the hydrogen atoms of the compound or group are substituted with substituents.

[0011] In this specification, unless otherwise specified, the term "substituent" means a halogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an alkoxy group, a cycloalkyloxy group, an aryl group, an aryloxy group, an arylalkyl group, an arylalkoxy group, a monovalent heterocyclic group, an alkylidene group, an amino group, a silyl group, a carboxy group, a sulfo group, a cyano group, a nitro group, a hydroxy group, a mercapto group, or an oxo group.

[0012] Examples of halogen atoms used as substituents include fluorine, chlorine, bromine, and iodine atoms. The alkyl group used as a substituent may be either linear or branched. The alkyl group preferably has 1 to 12 carbon atoms, more preferably 1 to 6, and even more preferably 1 to 3. The alkenyl group used as a substituent may be either linear or branched. The alkenyl group preferably has 2 to 12 carbon atoms, more preferably 2 to 6, and even more preferably 2 or 3. The cycloalkyl group used as a substituent preferably has 3 to 12 carbon atoms, more preferably 3 to 6. The alkoxy group used as a substituent may be either linear or branched. The alkoxy group preferably has 1 to 12 carbon atoms, more preferably 1 to 6. The cycloalkyloxy group used as a substituent preferably has 3 to 12 carbon atoms, more preferably 3 to 6. The aryl group used as a substituent is a group in which one hydrogen atom on the aromatic ring has been removed from an aromatic hydrocarbon. The aryl group used as a substituent preferably has 6 to 14 carbon atoms, more preferably 6 to 10. The aryloxy group used as a substituent preferably has 6 to 14 carbon atoms, more preferably 6 to 10. The arylalkyl group used as a substituent preferably has 7 to 15 carbon atoms, more preferably 7 to 11. The arylalkoxy group used as a substituent preferably has 7 to 15 carbon atoms, more preferably 7 to 11. The monovalent heterocyclic group used as a substituent refers to a group obtained by removing one hydrogen atom from the heterocycle of a heterocyclic compound. The monovalent heterocyclic group preferably has 3 to 15 carbon atoms, more preferably 3 to 9 carbon atoms. The alkylidene group used as a substituent refers to a group obtained by removing two hydrogen atoms from the same carbon atom of an alkane. The alkylidene group preferably has 1 to 12 carbon atoms, more preferably 1 to 6, and even more preferably 1 to 3 carbon atoms. The above-mentioned substituents may further have a substituent (hereinafter sometimes referred to as a "secondary substituent"). Unless otherwise specified, the secondary substituent may be the same as the above-mentioned substituent.

[0013] The present invention will be described in detail below with reference to embodiments and examples. However, the present invention is not limited to the following embodiments and examples, and can be implemented with any modifications within the scope of the claims of the present invention and their equivalents.

[0014] [Resin composition] The resin composition of the present invention comprises: thermosetting resin, inorganic fillers, and Resin X containing an oligophenylene ether skeleton, having a glass transition temperature of 25°C or less A resin composition comprising: a cured product of the resin composition having a stud-pull adhesion strength of 600 kgf / cm 2 The present invention is characterized in that:

[0015] As mentioned above, in recent years, insulating materials such as encapsulants for semiconductor chip packages and interlayer insulating materials for circuit boards are required to have a low dielectric tangent in order to reduce transmission loss during operation in high-frequency environments for next-generation high-speed communications. Furthermore, with the need for larger substrates such as WLP and PLP, it is becoming increasingly important to reduce warpage in the overall package structure. To meet these demands, conventional resins have been formulated with high inorganic fillers or stress relaxation agents, which ensure excellent dielectric properties while also achieving low warpage through low thermal expansion and stress relaxation capabilities. However, as demand for larger sizes increases, the need for even lower warpage requires the addition of more stress relaxation agents, which is known to result in a trade-off with low dielectric tangent. Furthermore, adding large amounts of stress relaxation agents with low glass transition temperatures can cause a decrease in resin strength when exposed to high-temperature, high-humidity environments, such as during reliability testing (HAST).

[0016] In contrast, a thermosetting resin and an inorganic filler are combined with an oligophenylene ether skeleton-containing resin X having a glass transition temperature of 25°C or less, and after curing, the strength is 600 kgf / cm 2The resin composition of the present invention, which exhibits the above-mentioned stud-pull adhesion strength, can suppress warpage, exhibit good dielectric properties, and produce a cured product that maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment. Thus, the resin composition of the present invention can advantageously achieve reduced transmission loss during operation in high-frequency environments, which is required for next-generation high-speed communications, and significantly contributes to the realization of insulating materials that exhibit low warpage and high reliability.

[0017] Each component will be described below.

[0018] <Thermosetting resin> The resin composition of the present invention contains a thermosetting resin.

[0019] The thermosetting resin is not particularly limited, but examples thereof include epoxy resin, benzocyclobutene resin, epoxy acrylate resin, urethane acrylate resin, urethane resin, cyanate resin, polyimide resin, benzoxazine resin, unsaturated polyester resin, melamine resin, silicone resin, etc. Among these, it is preferable to contain an epoxy resin, from the viewpoint of providing a cured product that can suppress warpage when combined with an inorganic filler and an oligophenylene ether skeleton-containing resin X described below, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment.

[0020] The type of epoxy resin is not particularly limited as long as it has one or more (preferably two or more) epoxy groups per molecule. Examples of epoxy resins include bisphenol-type epoxy resins, dicyclopentadiene-type epoxy resins, trisphenol-type epoxy resins, naphthol novolac-type epoxy resins, phenol novolac-type epoxy resins, tert-butyl-catechol-type epoxy resins, naphthalene-type epoxy resins, naphthol-type epoxy resins, anthracene-type epoxy resins, glycidylamine-type epoxy resins, glycidyl ester-type epoxy resins, cresol novolac-type epoxy resins, biphenyl-type epoxy resins, linear aliphatic epoxy resins, epoxy resins having a butadiene structure, alicyclic epoxy resins, heterocyclic epoxy resins, spiro ring-containing epoxy resins, cyclohexane-type epoxy resins, cyclohexanedimethanol-type epoxy resins, naphthylene ether-type epoxy resins, trimethylol-type epoxy resins, and tetraphenylethane-type epoxy resins. Bisphenol-type epoxy resins refer to epoxy resins having a bisphenol structure, such as bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, bisphenol S-type epoxy resins, and bisphenol AF-type epoxy resins. Biphenyl-type epoxy resins refer to epoxy resins having a biphenyl structure, where the biphenyl structure may have a substituent such as an alkyl group, an alkoxy group, or an aryl group. Therefore, bixylenol-type epoxy resins and biphenylaralkyl-type epoxy resins are also included in biphenyl-type epoxy resins.

[0021] Epoxy resins can be classified into epoxy resins that are liquid at a temperature of 20°C (hereinafter referred to as "liquid epoxy resins") and epoxy resins that are solid at a temperature of 20°C (hereinafter referred to as "solid epoxy resins"). The resin composition of the present invention may contain only a liquid epoxy resin, only a solid epoxy resin, or a combination of a liquid epoxy resin and a solid epoxy resin.

[0022] The liquid epoxy resin is preferably a liquid epoxy resin having two or more epoxy groups in one molecule.

[0023] Preferred liquid epoxy resins include glycerol-type epoxy resins, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, bisphenol AF-type epoxy resins, naphthalene-type epoxy resins, glycidyl ester-type epoxy resins, glycidyl amine-type epoxy resins, phenol novolac-type epoxy resins, alicyclic epoxy resins having an ester skeleton, cyclohexanedimethanol-type epoxy resins, alicyclic glycidyl ethers, and epoxy resins having a butadiene structure.

[0024] Specific examples of liquid epoxy resins include "EX-992L" manufactured by Nagase ChemteX Corporation, "YX7400" manufactured by Mitsubishi Chemical Corporation, "HP4032", "HP4032D", and "HP4032SS" (naphthalene-type epoxy resins) manufactured by DIC Corporation; "828US", "828EL", and "825" (bisphenol A-type epoxy resins) manufactured by Mitsubishi Chemical Corporation; "jER807" and "1750" (bisphenol F-type epoxy resins) manufactured by Mitsubishi Chemical Corporation; "jER152" (phenol novolac type epoxy resin) manufactured by Ryo Chemical Co., Ltd.; "630", "630LSD", and "604" (glycidylamine type epoxy resins) manufactured by Mitsubishi Chemical Corporation; "ED-523T" (glycirol type epoxy resin) manufactured by ADEKA Corporation; "EP-3950L" and "EP-3980S" (glycidylamine type epoxy resins) manufactured by ADEKA Corporation; "EP-4088S" (dicyclopentadiene type epoxy resin) manufactured by ADEKA Corporation ); "ZX1059" manufactured by Nippon Steel Chemical & Material Co., Ltd. (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin); "EX-721" manufactured by Nagase ChemteX Corporation (glycidyl ester type epoxy resin); "EX-991L" manufactured by Nagase ChemteX Corporation (an epoxy resin containing an alkyleneoxy skeleton and a butadiene skeleton); "Celloxide 2021P" manufactured by Daicel Corporation (an alicyclic epoxy resin having an ester skeleton); "PB-3600" manufactured by Daicel Corporation, "JP-100" and "JP-200" manufactured by Nippon Soda Co., Ltd. (epoxy resins having a butadiene structure); "ZX1658" and "ZX1658GS" manufactured by Nippon Steel Chemical & Material Co., Ltd. (liquid 1,4-glycidylcyclohexane type epoxy resin); "EG-280" manufactured by Osaka Gas Chemicals Co., Ltd. (an epoxy resin containing a fluorene structure); and "EX-201" manufactured by Nagase ChemteX Corporation (alicyclic glycidyl ether).

[0025] As the solid epoxy resin, a solid epoxy resin having three or more epoxy groups in one molecule is preferred, and an aromatic solid epoxy resin having three or more epoxy groups in one molecule is more preferred.

[0026] Preferred solid epoxy resins include bixylenol-type epoxy resins, naphthalene-type epoxy resins, naphthalene-type tetrafunctional epoxy resins, naphthol novolac-type epoxy resins, cresol novolac-type epoxy resins, dicyclopentadiene-type epoxy resins, trisphenol-type epoxy resins, naphthol-type epoxy resins, biphenyl-type epoxy resins, naphthylene ether-type epoxy resins, anthracene-type epoxy resins, bisphenol A-type epoxy resins, bisphenol AF-type epoxy resins, phenol aralkyl-type epoxy resins, tetraphenylethane-type epoxy resins, and phenolphthalimidine-type epoxy resins.

[0027] Specific examples of solid epoxy resins include "HP4032H" (naphthalene type epoxy resin) manufactured by DIC Corporation; "HP-4700" and "HP-4710" (naphthalene type tetrafunctional epoxy resins) manufactured by DIC Corporation; "N-690" (cresol novolac type epoxy resin) manufactured by DIC Corporation; "N-695" (cresol novolac type epoxy resin) manufactured by DIC Corporation; "HP-7200", "HP-7200HH", "HP-7200H", and "HP-7200L" (dicyclopentadiene type epoxy resins) manufactured by DIC Corporation; and "EXA-7311" and "E" manufactured by DIC Corporation. XA-7311-G3, EXA-7311-G4, EXA-7311-G4S, HP-6000, and HP-6000L (naphthylene ether epoxy resins); Nippon Kayaku's EPPN-502H (trisphenol epoxy resin); Nippon Kayaku's NC7000L (naphthol novolac epoxy resin); Nippon Kayaku's NC3000H, NC3000, NC3000L, NC3000FH, and NC3100 (biphenyl epoxy resins); and Nippon Steel Chemical & Material's ESN475V. "ESN4100V" (naphthalene-type epoxy resin); "ESN485" (naphthol-type epoxy resin) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "ESN375" (dihydroxynaphthalene-type epoxy resin) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "YX4000H", "YX4000", "YX4000HK", and "YL7890" (bixylenol-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YL6121" (biphenyl-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX8800" (anthracene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation. Examples of epoxy resins include "YX7700" (phenol aralkyl type epoxy resin) manufactured by Osaka Gas Chemicals Co., Ltd.; "PG-100" and "CG-500" manufactured by Osaka Gas Chemicals Co., Ltd.; "YL7760" (bisphenol AF type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YL7800" (fluorene type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1010" (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1031S" (tetraphenylethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation; and "WHR991S" (phenolphthalimidine type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.These may be used alone or in combination of two or more.

[0028] When a liquid epoxy resin and a solid epoxy resin are used in combination as the epoxy resin, the mass ratio thereof (liquid epoxy resin:solid epoxy resin) is preferably 10:1 to 1:50, more preferably 5:1 to 1:20, even more preferably 2:1 to 1:10, and particularly preferably 1:1 to 1:3.

[0029] The epoxy equivalent of the epoxy resin is preferably 50 g / eq. to 5,000 g / eq., more preferably 60 g / eq. to 2,000 g / eq., even more preferably 70 g / eq. to 1,000 g / eq., and even more preferably 80 g / eq. to 500 g / eq. The epoxy equivalent is the mass of the resin per equivalent of epoxy groups. This epoxy equivalent can be measured according to JIS K7236.

[0030] The weight-average molecular weight of the epoxy resin is preferably 100 to 5,000, more preferably 250 to 3,000, and even more preferably 400 to 1500. The weight-average molecular weight of the resin can be measured by gel permeation chromatography (GPC) as a polystyrene-equivalent value.

[0031] The content of the thermosetting resin in the resin composition is not particularly limited, but is preferably 5% by mass or more, more preferably 10% by mass or more, and even more preferably 12% by mass or more, 14% by mass or more, or 15% by mass or more, when the resin component in the resin composition is 100% by mass. The upper limit of the content is not particularly limited and may be determined depending on the properties required of the resin composition, but may be, for example, 60% by mass or less, 50% by mass or less, or 40% by mass or less.

[0032] In the present invention, the term "resin component" in relation to the resin composition refers to the non-volatile components constituting the resin composition excluding the inorganic filler described above.

[0033] <Inorganic filler> The resin composition of the present invention contains an inorganic filler, which can reduce the thermal expansion coefficient and the dielectric loss tangent.

[0034] Examples of inorganic fillers include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, aluminum silicate, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium titanate zirconate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Among these, silica is particularly preferred. Examples of silica include amorphous silica, fused silica, crystalline silica, synthetic silica, and hollow silica. Spherical silica is preferred. The inorganic fillers may be used alone or in combination of two or more.

[0035] Commercially available inorganic fillers include, for example, "SP60-05" and "SP507-05" manufactured by Nippon Steel Chemical & Material Co., Ltd.; "YC100C," "YA050C," "YA050C-MJE," "YA010C," "SC2500SQ," "SO-C4," "SO-C2," and "SO-C1" manufactured by Admatechs Co., Ltd.; "UFP-30," "DAW-03," and "FB-105FD" manufactured by Denka Co., Ltd.; "Silfil NSS-3N," "Silfil NSS-4N," and "Silfil NSS-5N" manufactured by Tokuyama Corporation; "CellSpheres" and "MGH-005" manufactured by Taiheiyo Cement Corporation; and "Sferique" and "BA-1" manufactured by JGC Catalysts and Chemicals Co., Ltd.

[0036] The average particle size of the inorganic filler is not particularly limited, but is preferably 10 μm or less, more preferably 5 μm or less, even more preferably 3 μm or less, 2 μm or less, 1 μm or less, or 0.7 μm or less. The lower limit of the average particle size is not particularly limited, but is preferably 0.01 μm or more, more preferably 0.05 μm or more, even more preferably 0.07 μm or more, 0.1 μm or more, or 0.2 μm or more. The average particle size of inorganic fillers can be measured using a laser diffraction / scattering method based on Mie scattering theory. Specifically, a volumetric particle size distribution of the inorganic filler is created using a laser diffraction / scattering particle size distribution analyzer, and the median diameter is used as the average particle size. A measurement sample can be prepared by weighing 100 mg of inorganic filler and 10 g of methyl ethyl ketone into a vial and dispersing the mixture ultrasonically for 10 minutes. The volumetric particle size distribution of the inorganic filler was measured using a laser diffraction particle size distribution analyzer with blue and red wavelength light sources using a flow cell system, and the average particle size was calculated as the median diameter from the particle size distribution obtained. Examples of laser diffraction particle size distribution analyzers include the LA-960 manufactured by Horiba, Ltd.

[0037] The specific surface area of ​​the inorganic filler is not particularly limited, but is preferably 0.1 m 2 / g or more, more preferably 0.5m 2 / g or more, more preferably 1m 2 / g or more, 3m 2 / g or more or 5m 2 The upper limit of the specific surface area is not particularly limited, but is preferably 100 m 2 / g or less, more preferably 80m 2 / g or less, more preferably 60m 2 / g or less, 50m 2 / g or less or 40m 2 / g or less. The specific surface area of ​​the inorganic filler can be obtained according to the BET method by adsorbing nitrogen gas onto the surface of the sample using a specific surface area measuring device (Macsorb HM-1210 manufactured by Mountech Co., Ltd.) and calculating the specific surface area using the BET multipoint method.

[0038] The inorganic filler is preferably surface-treated with an appropriate surface treatment agent. Surface treatment can enhance the moisture resistance and dispersibility of the inorganic filler. Examples of surface treatment agents include silane coupling agents such as vinyl silane coupling agents, epoxy silane coupling agents, styryl silane coupling agents, (meth)acrylic silane coupling agents, amino silane coupling agents, isocyanurate silane coupling agents, ureido silane coupling agents, mercapto silane coupling agents, isocyanate silane coupling agents, and acid anhydride silane coupling agents; non-silane coupling alkoxysilane compounds such as methyltrimethoxysilane and phenyltrimethoxysilane; and silazane compounds. The surface treatment agents may be used alone or in combination of two or more.

[0039] Examples of commercially available surface treatment agents include "KBM403" (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM803" (3-mercaptopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBE903" (3-aminopropyltriethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., and "SZ-31" (hexamethyldisilazane) manufactured by Shin-Etsu Chemical Co., Ltd.

[0040] The degree of surface treatment with the surface treatment agent is preferably within a predetermined range from the viewpoint of improving the dispersibility of the inorganic filler. Specifically, 100% by mass of the inorganic filler is preferably surface-treated with 0.2 to 5% by mass of the surface treatment agent.

[0041] The degree of surface treatment with the surface treatment agent can be evaluated by the amount of carbon per unit surface area of ​​the inorganic filler. From the viewpoint of improving the dispersibility of the inorganic filler, the amount of carbon per unit surface area of ​​the inorganic filler is set to 0.02 mg / m 2 More than 0.1 mg / m is preferable. 2 More preferably, 0.2 mg / m or more 2 On the other hand, from the viewpoint of preventing an increase in the melt viscosity of the resin composition or the melt viscosity in the form of a sheet, it is more preferable that the melt viscosity is 1.0 mg / m 2 Less than 0.8 mg / m is preferred 2 Less than 0.5 mg / m is more preferable. 2 The following is even more preferred. The carbon amount per unit surface area of ​​the inorganic filler can be measured after the surface-treated inorganic filler is washed with a solvent (e.g., methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler that has been surface-treated with a surface treatment agent, and ultrasonic cleaning is performed at 25°C for 5 minutes. After removing the supernatant and drying the solid content, the carbon amount per unit surface area of ​​the inorganic filler can be measured using a carbon analyzer. The carbon analyzer that can be used is the "EMIA-320V" manufactured by Horiba, Ltd.

[0042] From the viewpoint of producing a cured product that can suppress warpage, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, the content of the inorganic filler in the resin composition is preferably 50% by mass or more, more preferably 55% by mass or more, and even more preferably 60% by mass or more, based on 100% by mass of the nonvolatile components in the resin composition. According to the present invention, which uses an oligophenylene ether skeleton-containing resin X described below, the content of the inorganic filler can be further increased while achieving good low warpage properties and high reliability after exposure to a high-temperature, high-humidity environment. For example, the content of the inorganic filler in the resin composition may be increased to 62% by mass or more, 64% by mass or more, 65% by mass or more, 66% by mass or more, or 68% by mass or more, based on 100% by mass of the nonvolatile components in the resin composition. The upper limit of the content of the inorganic filler is not particularly limited, but may be, for example, 90% by mass or less, 85% by mass or less, etc.

[0043] <Oligophenylene ether skeleton-containing resin X> The resin composition of the present invention contains an oligophenylene ether skeleton-containing resin X (also simply referred to as "resin X") having a glass transition temperature of 25°C or lower. Here, "resin X having a glass transition temperature of 25° C. or lower" means that if resin X has only one glass transition temperature, that glass transition temperature is 25° C. or lower, and if resin X has multiple glass transition temperatures, at least one of the glass transition temperatures is 25° C. or lower. By using such resin X in combination with a thermosetting resin and an inorganic filler, it is possible to realize a resin composition that can suppress warping, exhibits good dielectric properties, and provides a cured product that maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment.

[0044] -Oligophenylene ether skeleton- Resin X preferably contains an oligophenylene ether skeleton containing a plurality of phenylene ether units represented by the following formula (1).

[0045] [ka] (In formula (1), R each independently represent a halogen atom, an optionally substituted alkyl group, an optionally substituted alkoxy group, an optionally substituted aryl group, an optionally substituted amino group, a nitro group, or a carboxy group; m represents an integer of 0 to 4.

[0046] The alkyl group or alkoxy group in R may be either linear or branched, and the number of carbon atoms therein is preferably 1 to 10, more preferably 1 to 6, and even more preferably 1 to 4 or 1 to 3. The number of carbon atoms does not include the number of carbon atoms of the substituent.

[0047] The number of carbon atoms in the aryl group for R is preferably 6 to 14, more preferably 6 to 10. The number of carbon atoms does not include the number of carbon atoms of the substituent.

[0048] The substituents that the monovalent group represented by R may have are as described above, and among them, the substituents are preferably at least one selected from a halogen atom, an alkyl group, an alkoxy group, and an aryl group, more preferably at least one selected from a halogen atom, an alkyl group, and an aryl group, and even more preferably at least one selected from a fluorine atom, an alkyl group having 1 to 6 carbon atoms, and an aryl group having 6 to 10 carbon atoms.

[0049] In formula (1), m represents an integer of 0 to 4, preferably an integer of 0 to 3, and more preferably an integer of 1 to 3.

[0050] In terms of providing a cured product that can suppress warpage in combination with a thermosetting resin and an inorganic filler, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, the oligophenylene ether skeleton is preferably an oligophenylene ether skeleton containing a plurality of one or more units selected from the group consisting of 2,6-disubstituted-1,4-phenylene ether units, 2,5-disubstituted-1,4-phenylene ether units, and 2,3,6-trisubstituted-1,4-phenylene ether units, and particularly preferably an oligophenylene ether skeleton containing a plurality of 2,6-disubstituted-1,4-phenylene ether units (wherein the substituents at the 2 and 6 positions, the substituents at the 2 and 5 positions, and the substituents at the 2, 3, and 6 positions correspond to R in formula (1)).

[0051] Specific examples of suitable oligophenylene ether skeletons include oligo(2,6-disubstituted-1,4-phenylene ether) skeletons such as oligo(2,6-dialkyl-1,4-phenylene ether) skeletons, oligo(2-alkyl-6-aryl-1,4-phenylene ether) skeletons, oligo(2,6-diaryl-1,4-phenylene ether) skeletons, and oligo(2,6-dihalo-1,4-phenylene ether) skeletons; 2,6-disubstituted phenols and other phenol compounds (e.g., 2,5-dialkyl-1,4-phenylene ether) skeletons; and oligophenylene ether skeletons containing a plurality of 2,6-disubstituted-1,4-phenylene ether units, such as a skeleton having a copolymer structure with 2,5-disubstituted phenols (e.g., 2,5-diarylphenol, 2-alkyl-5-arylphenol, and 2,5-diarylphenol, and 2,3,6-trisubstituted phenols (e.g., 2,3,6-trialkylphenol and 2,3,6-trihalophenol), and a coupling reaction product of 2,6-disubstituted phenol with a biphenol compound or a bisphenol compound.

[0052] In order to provide a cured product that can suppress warpage when combined with a thermosetting resin and an inorganic filler, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, it is preferable that Resin X contains a structure represented by the following formula (2) as the oligophenylene ether skeleton:

[0053] [ka] (In formula (2), R and m have the same meanings as above. L represents a divalent linking group; n1 and n2 each independently represent an integer of 1 to 100.

[0054] In formula (2), L represents a divalent linking group. Examples of the divalent linking group include a single bond, an alkylene group which may have a substituent, an alkenylene group which may have a substituent, an arylene group which may have a substituent, an alkylarylene group which may have a substituent, a heteroarylene group which may have a substituent, -O-, -NH-, -NRx Examples of the divalent groups include -, -CO-, -CS-, -SO-, -SO2-, -C(=O)O-, -NHC(=O)-, -NC(=O)N-, -NHC(=O)O-, -C(=O)-, -S-, and divalent groups formed by combining a plurality of these groups. x represents a hydrocarbon group having 1 to 12 carbon atoms.

[0055] Among these, from the viewpoint of being able to enjoy the effects of the present invention more effectively, the divalent linking group represented by L is preferably a single bond, an alkylene group which may have a substituent, an alkenylene group which may have a substituent, an arylene group which may have a substituent, -O-, -NR x -, -CO-, -CS-, -SO-, -SO2-, and divalent groups formed by combining two or more of these are preferred, and a single bond, an alkylene group which may have a substituent, an arylene group which may have a substituent, and divalent groups formed by combining two or more of these are more preferred.

[0056] The substituents that the divalent group in L may have are as described above, but from the viewpoint of being able to further enjoy the effects of the present invention, the substituents are preferably one or more selected from a halogen atom and a hydrocarbon group, more preferably one or more selected from a halogen atom, an alkyl group, and an aryl group, and even more preferably one or more selected from a fluorine atom, an alkyl group having 1 to 6 carbon atoms, and an aryl group having 6 to 10 carbon atoms.

[0057] The divalent linking group represented by L preferably has 60 or less, more preferably 48 or less, even more preferably 36 or less, and even more preferably 24 or less carbon atoms.

[0058] In particular, from the viewpoint of providing a cured product that can suppress warpage in combination with a thermosetting resin and an inorganic filler, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, the divalent linking group represented by L is preferably an alkylene group having 1 to 6 carbon atoms or a divalent group represented by the following formula (3):

[0059] [ka] (In formula (3), R 1 ~R 8 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a phenyl group; * represents a bond.)

[0060] In formula (3), R 1 ~R 8 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a phenyl group. Among these, from the viewpoint of being able to enjoy the effects of the present invention more effectively, R 1 , R 2 , R 7 and R 8 preferably represents an alkyl group having 1 to 6 carbon atoms, and more preferably represents an alkyl group having 1 to 4 carbon atoms. 3 and R 4 Among these, it is preferable that one of them represents a hydrogen atom and the other represents an alkyl group having 1 to 6 carbon atoms, and R 5 and R 6 Preferably, one of these represents a hydrogen atom and the other represents an alkyl group having 1 to 6 carbon atoms.

[0061] In formula (2), R and m are as described above for the phenylene ether unit of formula (1). Among them, from the viewpoint of further enjoying the effects of the present invention, the phenylene ether unit constituting the oligophenylene ether skeleton represented by formula (2) is preferably a 2,6-disubstituted-1,4-phenylene ether unit, and more preferably a 2,6-dialkyl-1,4-phenylene ether unit, a 2-alkyl-6-aryl-1,4-phenylene ether unit, a 2,6-diaryl-1,4-phenylene ether unit, or a 2,6-dihalo-1,4-phenylene ether unit.

[0062] In order to provide a cured product that can suppress warpage when combined with a thermosetting resin and an inorganic filler, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, it is preferable that Resin X contains a structure represented by the following formula (2-1) as the oligophenylene ether skeleton.

[0063] [ka] (In formula (2-1), R, L, n1, and n2 have the same meanings as above.)

[0064] In formula (2-1), R, L, n1, and n2 have the same meanings as above, and preferred examples thereof are as described above. In particular, from the viewpoint of further enjoying the effects of the present invention, R each independently preferably represents a halogen atom, an alkyl group, or an aryl group, more preferably represents a halogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 10 carbon atoms, and further preferably represents an alkyl group having 1 to 6 carbon atoms; L is a single bond, an alkylene group which may have a substituent, an alkenylene group which may have a substituent, an arylene group which may have a substituent, -O-, -NR x -, -CO-, -CS-, -SO-, -SO2-, and a divalent group formed by combining a plurality of these are preferred, a single bond, an alkylene group which may have a substituent, an arylene group which may have a substituent, and a divalent group formed by combining a plurality of these are more preferred, and an alkylene group having 1 to 6 carbon atoms or a divalent group represented by the above formula (3) is even more preferred, n1 and n2 each independently represent an integer in the range of 1 to 100, and in relation to the flexible backbone described later, preferably represent an integer in a range such that at least one glass transition temperature of resin X is 25°C or lower, more preferably such that the preferable conditions (the conditions will be described later) are satisfied, and further such that the weight average molecular weight of resin X satisfies the preferable conditions (the conditions will be described later).

[0065] -Flexible skeleton- Resin X contains, in addition to an oligophenylene ether skeleton, which is a rigid skeleton, a skeleton (also simply referred to as a "flexible skeleton") that is more flexible than the oligophenylene ether skeleton.

[0066] In terms of providing a cured product that can further suppress warping when combined with a thermosetting resin and an inorganic filler, exhibits better dielectric properties, and maintains better mechanical strength even when exposed to a high-temperature, high-humidity environment, it is preferable that Resin X contains, as a flexible skeleton, one or more structural units selected from the group consisting of polyolefin structural units, polycarbonate structural units, polyether structural units, polyester structural units, poly(meth)acrylic structural units, and polysiloxane structural units.

[0067] Examples of polyolefin structural units include polyethylene structural units, polypropylene structural units, polybutadiene structural units, hydrogenated polybutadiene structural units, polyisopropylene structural units, hydrogenated polyisopropylene structural units, etc. Here, the term "hydrogenated polybutadiene structural units" refers to polybutadiene structural units in which some or all of the unsaturated bonds have been hydrogenated, and similarly, the term "hydrogenated polyisoprene structural units" refers to polyisoprene structural units in which some or all of the unsaturated bonds have been hydrogenated.

[0068] For example, when Resin X is produced using a polyol compound having a flexible backbone (in this embodiment, a polyolefin structure-containing polyol compound) as described below, the polyolefin structural unit may be the remaining structural unit obtained by removing two or more hydroxyl groups from the polyolefin structure-containing polyol compound. The polyolefin structure-containing polyol compound may be a commercially available product, and examples of such commercially available products include "G-1000," "G-2000," and "G-3000" (polybutadiene having hydroxy groups at both ends), and "GI-1000," "GI-2000," and "GI-3000" (polybutadiene having hydroxy groups at both ends, hydrogenated polybutadiene) manufactured by Nippon Soda Co., Ltd.

[0069] Examples of polycarbonate structural units include aliphatic polycarbonates (polyethylene carbonate, polypropylene carbonate, polybutylene carbonate, polycyclohexane carbonate, etc.) and aromatic polycarbonates (polybisphenol A carbonate, polybisphenol F carbonate, polybisphenol S carbonate, etc.).

[0070] For example, when Resin X is produced using a polyol compound having a flexible backbone (in this embodiment, a polycarbonate structure-containing polyol compound) as described below, the polycarbonate structural unit may be the remaining structural unit obtained by removing two or more hydroxyl groups from the polycarbonate structure-containing polyol compound. Commercially available polycarbonate structure-containing polyol compounds may be used, and examples of such commercially available products include "T6002" and "T6001" (polycarbonates with hydroxy groups at both ends) manufactured by Asahi Kasei Chemicals Corporation, and "C-1090," "C-2015N," "C-2090," and "C-3090" (polycarbonates with hydroxy groups at both ends) manufactured by Kuraray Co., Ltd.

[0071] Examples of the polyether structural unit include a polyethylene glycol structural unit, a polypropylene glycol structural unit, a polytetramethylene glycol structural unit, and a polybutylene glycol structural unit.

[0072] The polyether structural unit may be, for example, the remaining structural unit obtained by removing two or more hydroxyl groups from a polyol compound having a flexible backbone (in this embodiment, a polyether structure-containing polyol compound) when Resin X is produced using the polyol compound having a flexible backbone as described below. The polyether structure-containing polyol compound may be a commercially available product, and examples of the commercially available product include "Pronon #102," "Pronon #104," "Pronon #201," "Pronon #202B," "Pronon #204," "Pronon #208," "Unilube 70DP-600B," and "Unilube 70DP-950B" (polyethylene glycol-polypropylene glycol copolymers) manufactured by NOF Corporation; "Pluronic (registered trademark) L-23," "Pluronic L-31," "Pluronic L-44," "Pluronic L-61," and "ADEKA Pluronic L- 62," "Pluronic L-64," "Pluronic L-71," "Pluronic L-72," "Pluronic L-101," "Pluronic L-121," "Pluronic P-84," "Pluronic P-85," "Pluronic P-103," "Pluronic F-68," "Pluronic F-88," "Pluronic F-108," "Pluronic 25R-1," "Pluronic 25R-2," "Pluronic 17R-2," "Pluronic 17R-3," and "Pluronic 17R-4" (polyethylene glycol-polypropylene glycol copolymers).

[0073] Examples of polyester structural units include polyethylene terephthalate structural units, polybutylene terephthalate structural units, polyethylene naphthalate structural units, polybutylene naphthalate structural units, and polytrimethylene terephthalate structural units.

[0074] For example, when resin X is produced using a polyol compound having a flexible backbone (a polyester structure-containing polyol compound in this embodiment) as described below, the polyester structural unit may be the remaining structural unit obtained by removing two or more hydroxyl groups from the polyester structure-containing polyol compound. The polyester structure-containing polyol compound may be a commercially available product, and examples of such commercially available products include Vylon (registered trademark) manufactured by Toyobo Co., Ltd., Polyester (registered trademark) manufactured by The Nippon Synthetic Chemical Industry Co., Ltd., and Slack (registered trademark) manufactured by Hitachi Chemical Polymer Co., Ltd.

[0075] The poly(meth)acrylic structural unit refers to a structural unit containing at least one of a plurality of acrylic structures and a plurality of methacrylic structures. For example, when resin X is produced using a polyol compound having a flexible backbone (in this embodiment, a poly(meth)acrylic structure-containing polyol compound) as described below, the poly(meth)acrylic structural unit may be the remaining structural unit obtained by removing two or more hydroxyl groups from the poly(meth)acrylic structure-containing polyol compound. The poly(meth)acrylic structure-containing polyol compound may be a commercially available product, such as Teisan Resin "SG-600TEA" and "SG-790" (hydroxy group-containing acrylic ester copolymer resin) manufactured by Nagase ChemteX Corporation, or "W-197C" (hydroxy group-containing acrylic ester copolymer resin) manufactured by Negami Chemical Industrial Co., Ltd.

[0076] Examples of the polysiloxane structural unit include a dialkylpolysiloxane structural unit, a diarylpolysiloxane structural unit, a monoalkylmonoarylpolysiloxane structural unit, and a monoalkylpolysiloxane structural unit.

[0077] For example, when resin X is produced using a polyol compound having a flexible backbone (in this embodiment, a polysiloxane structure-containing polyol compound) as described below, the polysiloxane structural unit may be the remaining structural unit obtained by removing two or more hydroxyl groups from the polysiloxane structure-containing polyol compound. The polysiloxane structure-containing polyol compound may be a commercially available product, and examples of such commercially available products include "X-21-5841" and "KF-9701" (polysiloxanes terminated with hydroxy groups) manufactured by Shin-Etsu Chemical Co., Ltd.

[0078] As described above, Resin X contains an oligophenylene ether skeleton and a flexible skeleton. The mass ratio of the oligophenylene ether skeleton to the flexible skeleton in Resin X (flexible skeleton / oligophenylene ether skeleton) is preferably 0.2 or more, more preferably 0.4 or more, and even more preferably 0.5 or more, 0.6 or more, or 0.7 or more, from the viewpoint of providing a cured product that can further suppress warpage when combined with a thermosetting resin and an inorganic filler, exhibits better dielectric properties, and maintains better mechanical strength even when exposed to a high-temperature, high-humidity environment. The mass ratio condition can be, for example, 3 or less, 2.5 or less, or 2 or less, etc.

[0079] Resin X has a glass transition temperature of 25°C or lower. If Resin X has only one glass transition temperature, that glass transition temperature is 25°C or lower. If Resin X has multiple glass transition temperatures, at least one of the glass transition temperatures is 25°C or lower. If Resin X has multiple glass transition temperatures, there are no particular restrictions on the other glass transition temperatures as long as they have a glass transition temperature of 25°C or lower. In combination with a thermosetting resin and an inorganic filler, from the viewpoint of providing a cured product that can further suppress warping, exhibits better dielectric properties, and maintains better mechanical strength even when exposed to a high-temperature, high-humidity environment, the glass transition temperature of Resin X of 25°C or lower is preferably 10°C or lower, more preferably 5°C or lower, and even more preferably 0°C or lower.

[0080] In the present invention, the glass transition temperature of Resin X is based on a value measured by DSC (differential scanning calorimetry) at a temperature rise rate of 5°C / min.

[0081] From the viewpoint of enjoying the effects of the present invention, the weight average molecular weight Mw of Resin X is preferably 5,000 or more, more preferably 10,000 or more, even more preferably 20,000 or more, 40,000 or more, 60,000 or more, 80,000 or more, or 100,000 or more. The upper limit of Mw is not particularly limited, but is usually less than 1,000,000, preferably less than 800,000, more preferably less than 600,000, and even more preferably less than 500,000.

[0082] In the present invention, the weight average molecular weight Mw of the resin X is based on a polystyrene equivalent value measured by gel permeation chromatography (GPC).

[0083] -Synthesis of Resin X- The synthesis procedure for resin X is not particularly limited as long as it can achieve a structure containing the above-mentioned oligophenylene ether skeleton and flexible skeleton.

[0084] An example of the synthesis procedure for resin X is shown below.

[0085] In one embodiment, resin X is (x1) a polyol compound containing a flexible skeleton; (x2) a polyisocyanate compound; (x3) an acid anhydride group-containing compound; (x4) a polyol compound containing an oligophenylene ether skeleton; and It is obtained by reacting

[0086] In this reaction, the flexible backbone of the component (x1) and the oligophenylene ether backbone of the component (x4) are bonded via an imide structure (preferably a cyclic imide structure) formed by the reaction of the components (x2) and (x3). Thus, in one embodiment, the resin X contains an imide structure (preferably a cyclic imide structure).

[0087] Suitable examples of the flexible skeleton of component (x1) are as described above. As component (x1), any polyol compound containing a flexible skeleton may be used depending on the structure of the target resin X (i.e., the flexible skeleton), and examples of commercially available products thereof are as described above in relation to the flexible skeleton. Depending on the type of flexible skeleton contained in resin X, component (x1) may be used alone or in combination of two or more.

[0088] The polyisocyanate compound of component (x2) is not particularly limited as long as it can react with a hydroxy group and react with component (x3) to form an imide structure. Examples of the polyisocyanate compound include aliphatic diisocyanate compounds such as butane diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, and 2,4,4-trimethylhexamethylene diisocyanate; alicyclic diisocyanate compounds such as norbornane diisocyanate, isophorone diisocyanate, hydrogenated xylylene diisocyanate, and hydrogenated diphenylmethane diisocyanate; phenylene diisocyanate (p-phenylene diisocyanate, m-phenylene diisocyanate), xylylene diisocyanate (p-xylylene diisocyanate, m-xylylene diisocyanate), and toluene diisocyanate. Examples of the (x2) component include aromatic diisocyanate compounds such as toluene-2,4-diisocyanate, toluene-2,6-diisocyanate, 4,4'-diphenylmethane diisocyanate, 3,3'-dimethyldiphenyl-4,4'-diisocyanate, 3,3'-diethyldiphenyl-4,4'-diisocyanate, m-xylene diisocyanate, 1,3-bis(α,α-dimethylisocyanatomethyl)benzene, tetramethylxylylene diisocyanate, diphenylene ether-4,4'-diisocyanate, and naphthalene diisocyanate; polymethylene polyphenyl polyisocyanate; and isocyanurate-, biuret-, and allophanate-modified versions of these compounds. The (x2) component may be used alone or in combination of two or more.

[0089] The acid anhydride group-containing compound of component (x3) is not particularly limited as long as it can react with component (x2) to form an imide structure (preferably a cyclic imide structure). Preferred examples of the acid anhydride group-containing compound include tetracarboxylic dianhydrides, such as pyromellitic dianhydride, benzophenone tetracarboxylic dianhydride, biphenyl tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, oxydiphthalic anhydride, p-phenylene bis(trimellitate anhydride), 4,4'-(hexafluoroisopropylidene)diphthalic anhydride, cyclobutane tetracarboxylic anhydride, cyclopentane tetracarboxylic anhydride, 3,3'-4,4'-diphenylsulfone tetracarboxylic dianhydride, and 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-C]furan-1,3-dione. The component (x3) may be used alone or in combination of two or more.

[0090] Suitable examples of the oligophenylene ether skeleton for the component (x4) are as described above. As the component (x4), any polyol compound containing an oligophenylene ether skeleton may be used depending on the structure of the target resin X (i.e., the oligophenylene ether skeleton). For example, an example of a polyol compound containing an oligophenylene ether skeleton represented by the above formula (2-1) is "NORYL SA90" manufactured by Sabic. Depending on the type of oligophenylene ether skeleton contained in the resin X, the component (x4) may be used alone or in combination of two or more.

[0091] The synthesis reaction of resin X using these components (x1) to (x4) may be carried out under conditions typically employed in imidization reactions using polyol compounds, isocyanate compounds, and acid anhydride group-containing compounds. The reaction raw materials containing components (x1) to (x4) may be reacted all at once, or the components (x1) to (x4) may be reacted sequentially. When the reaction raw materials containing components (x1) to (x4) are reacted all at once, the reaction temperature may be, for example, in the range of 100 to 160°C, and the reaction time may be, for example, in the range of 4 to 10 hours. When the components (x1) to (x4) are reacted sequentially, the components (x1) and (x2) may be reacted, for example, at a temperature of 50 to 100°C for 0.5 to 4 hours, followed by the addition of components (x3) and (x4), and the reaction may be carried out, for example, at a temperature of 120 to 160°C for 3 to 6 hours.

[0092] The reaction of components (x1) to (x4) may be carried out using a catalyst, such as tertiary amines (e.g., tetramethylbutanediamine, benzyldimethylamine, triethanolamine, triethylamine, N,N'-dimethylpiperidine, α-methylbenzyldimethylamine, N-methylmorpholine, and triethylenediamine), and organometallic catalysts (e.g., dibutyltin laurate, dimethyltin dichloride, cobalt naphthenate, and zinc naphthenate).

[0093] In such a reaction, by changing the degree of reaction between the (x1) component and the (x2) component or the ratio of the (x1) component to the (x4) component, it is possible to adjust the molecular weight of the resin X, the proportion of the flexible skeleton in the resin X, and ultimately the glass transition temperature of the resin X.

[0094] From the viewpoint of providing a cured product that can further suppress warpage, exhibits better dielectric properties, and maintains better mechanical strength even when exposed to a high-temperature, high-humidity environment, the mass ratio of resin X to inorganic filler (resin X / inorganic filler) is preferably 0.03 or more, more preferably 0.05 or more, even more preferably 0.06 or more, 0.08 or more, 0.1 or more, 0.12 or more, 0.14 or more, or 0.15 or more. In particular, a mass ratio of resin X / inorganic filler of 0.1 or more is preferable because it is easy to obtain a cured product that is excellent in all of dielectric loss tangent, warpage, and reliability. From the same viewpoint, the upper limit of the mass ratio is preferably 0.5 or less, more preferably 0.4 or less, and even more preferably 0.3 or less.

[0095] From the viewpoint of better enjoying the effects of the present invention, the content of resin X in the resin composition is preferably 5% by mass or more, more preferably 10% by mass or more, even more preferably 15% by mass or more, still more preferably 20% by mass or more, 22% by mass or more, 24% by mass or more, or 25% by mass or more, when the resin components in the resin composition are taken as 100% by mass, and the upper limit is preferably 66% by mass or less, 64% by mass or less, or 62% by mass or less, more preferably 60% by mass or less, and even more preferably 55% by mass or less, 50% by mass or less, 48% by mass or less, 46% by mass or less, or 45% by mass or less. Therefore, in one embodiment, when the resin components in the resin composition are taken as 100% by mass, the content of resin X is 10% by mass or more but less than 60% by mass.

[0096] <Curing agent> The resin composition of the present invention may further contain a curing agent.

[0097] The curing agent is not particularly limited, but examples thereof include active ester curing agents, phenolic curing agents, naphthol curing agents, carbodiimide curing agents, acid anhydride curing agents, amine curing agents, benzoxazine curing agents, cyanate ester curing agents, and thiol curing agents. The curing agents may be used alone or in combination of two or more. From the viewpoint of better enjoying the effects of the present invention, it is preferable that the curing agent be one or more selected from active ester curing agents, phenolic curing agents, and carbodiimide curing agents.

[0098] As the active ester curing agent, a compound having one or more active ester groups per molecule can be used. Among them, preferred active ester curing agents are compounds having two or more highly reactive ester groups per molecule, such as phenol esters, thiophenol esters, N-hydroxyamine esters, and esters of heterocyclic hydroxy compounds. The active ester curing agent is preferably one obtained by a condensation reaction between a carboxylic acid compound and / or a thiocarboxylic acid compound and a hydroxy compound and / or a thiol compound. In particular, from the viewpoint of improving heat resistance, active ester curing agents derived from carboxylic acid compounds are preferred, active ester curing agents obtained from a carboxylic acid compound and a hydroxy compound are more preferred, and active ester curing agents obtained from a carboxylic acid compound and an aromatic hydroxy compound are even more preferred.

[0099] The carboxylic acid compound may be either an aromatic carboxylic acid compound or an aliphatic carboxylic acid compound, and examples thereof include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromellitic acid, and halides thereof.

[0100] Examples of aromatic hydroxy compounds include (i) polyaddition products of unsaturated aliphatic cyclic compounds containing two double bonds per molecule with phenols, (ii) various bisphenol compounds, (iii) aromatic polyols having two or more hydroxy groups bonded to a carbon atom on an aromatic ring, and (iv) aromatic monools having one hydroxy group bonded to a carbon atom on an aromatic ring. Examples of polyaddition products of unsaturated aliphatic cyclic compounds with phenols include polyaddition products of unsaturated aliphatic cyclic compounds such as dicyclopentadiene, tetrahydroindene, norbornadiene, limonene, and vinylcyclohexene with optionally substituted phenols (e.g., phenol, cresol, xylenol, ethylphenol, propylphenol, vinylphenol, allylphenol, phenylphenol, benzylphenol, and halophenols), and specific examples thereof include dicyclopentadiene-phenol polyaddition products. Examples of bisphenol compounds include bisphenol A, bisphenol F, bisphenol AF, bisphenol AP, bisphenol B, bisphenol BP, bisphenol C, and bisphenol M. Examples of aromatic polyols in which two or more hydroxy groups are bonded to carbon atoms on an aromatic ring include hydroquinone, resorcinol, catechol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, benzenetriol, and phenol novolak. Examples of aromatic monools having one hydroxy group bonded to a carbon atom on an aromatic ring include phenol, cresol, xylenol, ethylphenol, propylphenol, vinylphenol, allylphenol, phenylphenol, benzylphenol, halophenols, naphthol, methylnaphthol, dimethylnaphthol, ethylnaphthol, propylnaphthol, vinylnaphthol, allylnaphthol, phenylnaphthol, benzylnaphthol, and halonaphthol.

[0101] Specific examples of suitable active ester curing agents include active ester compounds containing a dicyclopentadiene-type diphenol structure, active ester compounds containing a naphthalene structure, active ester compounds containing an acetylated product of phenol novolac, and active ester compounds containing a benzoylated product of phenol novolac. Among these, active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene-type diphenol structure are more preferred. The "dicyclopentadiene-type diphenol structure" refers to a divalent structural unit consisting of phenylene-dicyclopentalene-phenylene.

[0102] Commercially available active ester curing agents include "EXB9451," "EXB9460," "EXB9460S," "HPC-8000L-65TM," "HPC-8000-65T," "HPC-8000H," and "HPC-8000H-65TM" (manufactured by DIC Corporation) as active ester compounds containing a dicyclopentadiene-type diphenol structure; and "HP-B-8151-62T," "EXB-8100L-65T," "EXB-9416-70BK," and "HPC-8150-62T" as active ester compounds containing a naphthalene structure. and "EXB-8" (manufactured by DIC Corporation); a phosphorus-containing active ester compound, "EXB9401" (manufactured by DIC Corporation); an active ester compound which is an acetylated product of phenol novolac, "DC808" (manufactured by Mitsubishi Chemical Corporation); active ester compounds which are benzoylated products of phenol novolac, "YLH1026," "YLH1030," and "YLH1048" (manufactured by Mitsubishi Chemical Corporation); an active ester compound containing a styryl group and a naphthalene structure, "PC1300-02-65MA" (manufactured by Air Water Inc.), and the like.

[0103] As the phenol-based curing agent and naphthol-based curing agent, from the viewpoint of heat resistance and water resistance, a phenol-based curing agent having a novolac structure or a naphthol-based curing agent having a novolac structure is preferred. Furthermore, from the viewpoint of achieving an insulating layer having good adhesion strength (peel strength) with the conductor layer, a nitrogen-containing phenol-based curing agent or a nitrogen-containing naphthol-based curing agent is preferred, and a triazine skeleton-containing phenol-based curing agent or a triazine skeleton-containing naphthol-based curing agent is more preferred. Among them, from the viewpoint of highly satisfying heat resistance, water resistance, and adhesion strength with the conductor layer, a triazine skeleton-containing phenol novolac resin or a triazine skeleton-containing naphthol novolac resin is preferred.

[0104] Specific examples of phenol-based curing agents and naphthol-based curing agents include "MEH-7700," "MEH-7810," "MEH-7851," and "MEH-8000H" manufactured by Meiwa Chemical Industry Co., Ltd.; "NHN," "CBN," and "GPH" manufactured by Nippon Kayaku Co., Ltd.; and "SN-170," "SN-180," "SN-190," "SN-475," "SN-485," "SN-495," "SN-495V," and "SN-37" manufactured by Nippon Steel Chemical & Material Co., Ltd. 5" and "SN-395" manufactured by DIC Corporation; "TD-2090", "TD-2090-60M", "LA-7052", "LA-7054", "LA-1356", "LA-3018", "LA-3018-50P", "EXB-9500", "HPC-9500", "KA-1160", "KA-1163", and "KA-1165" manufactured by Gun-ei Chemical Co., Ltd.; and "GDP-6115L", "GDP-6115H", and "ELPC75" manufactured by Gun-ei Chemical Co., Ltd.

[0105] Examples of carbodiimide curing agents include curing agents having one or more, preferably two or more, carbodiimide structures in one molecule, such as aliphatic biscarbodiimides such as tetramethylene-bis(t-butylcarbodiimide) and cyclohexane-bis(methylene-t-butylcarbodiimide); aromatic biscarbodiimides such as phenylene-bis(xylylcarbodiimide); and aliphatic polycarbodiimides such as polyhexamethylenecarbodiimide, polytrimethylhexamethylenecarbodiimide, polycyclohexylenecarbodiimide, poly(methylenebiscyclohexylenecarbodiimide), and poly(isophoronecarbodiimide). ; aromatic polycarbodiimides such as poly(phenylenecarbodiimide), poly(naphthylenecarbodiimide), poly(tolylenecarbodiimide), poly(methyldiisopropylphenylenecarbodiimide), poly(triethylphenylenecarbodiimide), poly(diethylphenylenecarbodiimide), poly(triisopropylphenylenecarbodiimide), poly(diisopropylphenylenecarbodiimide), poly(xylylenecarbodiimide), poly(tetramethylxylylenecarbodiimide), poly(methylenediphenylenecarbodiimide), and poly[methylenebis(methylphenylene)carbodiimide].

[0106] Commercially available carbodiimide curing agents include, for example, "Carbodilite V-02B," "Carbodilite V-03," "Carbodilite V-04K," "Carbodilite V-07," and "Carbodilite V-09" manufactured by Nisshinbo Chemical Inc.; and "Stavaxol P," "Stavaxol P400," and "Hykasil 510" manufactured by Rhein Chemie.

[0107] The acid anhydride curing agent may be a curing agent having one or more acid anhydride groups in one molecule, and a curing agent having two or more acid anhydride groups in one molecule is preferred. Specific examples of the acid anhydride curing agent include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, hydrogenated methylnadic anhydride, trialkyltetrahydrophthalic anhydride, dodecenyl succinic anhydride, 5-(2,5-dioxotetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, trimellitic anhydride, pyromellitic anhydride, and benzophenonetetracarboxylic dianhydride. Examples of suitable anhydrides include anhydrides, biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, oxydiphthalic dianhydride, 3,3'-4,4'-diphenylsulfonetetracarboxylic dianhydride, 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-C]furan-1,3-dione, ethylene glycol bis(anhydrotrimellitate), and polymeric anhydrides such as styrene-maleic acid resins, which are copolymers of styrene and maleic acid. Commercially available acid anhydride curing agents include "HNA-100," "MH-700," "MTA-15," "DDSA," and "OSA" manufactured by New Japan Chemical Co., Ltd.; "YH-306" and "YH-307" manufactured by Mitsubishi Chemical Corporation; "HN-2200" and "HN-5500" manufactured by Hitachi Chemical Co., Ltd.; and "EF-30," "EF-40," "EF-60," and "EF-80" manufactured by Clay Valley.

[0108] Examples of the amine curing agent include curing agents having one or more, preferably two or more, amino groups in one molecule, such as aliphatic amines, polyether amines, alicyclic amines, and aromatic amines, among which aromatic amines are preferred from the viewpoint of achieving the desired effects of the present invention. The amine curing agent is preferably a primary amine or a secondary amine, and more preferably a primary amine. Specific examples of amine-based curing agents include 4,4'-methylenebis(2,6-dimethylaniline), 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, m-phenylenediamine, m-xylylenediamine, diethyltoluenediamine, 4,4'-diaminodiphenyl ether, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dihydroxybenzidine, and 2,2-bis(3-amino-4-hydroxyphenyl)propane. propane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethanediamine, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-(4-aminophenoxy)phenyl)propane, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 4,4'-bis(4-aminophenoxy)biphenyl, bis(4-(4-aminophenoxy)phenyl)sulfone, bis(4-(3-aminophenoxy)phenyl)sulfone, and the like. Commercially available amine-based curing agents may be used, and examples thereof include "SEIKACURE-S" manufactured by Seika Corporation, "KAYABOND C-200S", "KAYABOND C-100", "KAYAHARD AA", "KAYAHARD AB", and "KAYAHARD AS" manufactured by Nippon Kayaku Co., Ltd., and "Epicure W" manufactured by Mitsubishi Chemical Corporation.

[0109] Specific examples of benzoxazine curing agents include "JBZ-OP100D" and "ODA-BOZ" manufactured by JFE Chemical Corporation; "HFB2006M" manufactured by Showa Polymer Co., Ltd.; and "Pd" and "Fa" manufactured by Shikoku Chemicals Corporation.

[0110] Examples of cyanate ester curing agents include bifunctional cyanate resins such as bisphenol A dicyanate, polyphenol cyanate (oligo(3-methylene-1,5-phenylene cyanate)), 4,4'-methylenebis(2,6-dimethylphenyl cyanate), 4,4'-ethylidene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane, 1,3-bis(4-cyanatephenyl-1-(methylethylidene))benzene, bis(4-cyanatephenyl)thioether, and bis(4-cyanatephenyl)ether; multifunctional cyanate resins derived from phenol novolac and cresol novolac; and prepolymers in which these cyanate resins are partially converted to triazine. Specific examples of cyanate ester curing agents include "PT30" and "PT60" (both phenol novolac type multifunctional cyanate ester resins) manufactured by Lonza Japan Co., Ltd., "BA230" and "BA230S75" (prepolymers in which part or all of bisphenol A dicyanate has been triazine converted to a trimer).

[0111] Examples of thiol-based curing agents include trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetrakis(3-mercaptobutyrate), and tris(3-mercaptopropyl)isocyanurate.

[0112] The reactive group equivalent of the curing agent is preferably 50 g / eq. to 3000 g / eq., more preferably 100 g / eq. to 1000 g / eq., still more preferably 100 g / eq. to 500 g / eq., and particularly preferably 100 g / eq. to 300 g / eq. The reactive group equivalent is the mass of the curing agent per equivalent of the reactive group.

[0113] From the viewpoint of easily realizing a cured product with a low dielectric loss tangent, the curing agent preferably contains an active ester curing agent. When the curing agent contains an active ester curing agent, the content of the active ester curing agent is preferably 30% by mass or more, more preferably 40% by mass or more, and even more preferably 50% by mass or more or 60% by mass or more, based on 100% by mass of the non-volatile components in the curing agent. The upper limit may be 100% by mass, but may also be, for example, 98% by mass or less, 95% by mass or less, or 90% by mass or less. According to the present invention using Resin X, a cured product with a low dielectric loss tangent can be realized even when no active ester curing agent is contained or when the amount of active ester curing agent is small. For example, when the non-volatile components in the curing agent are taken as 100% by mass, a cured product with a low dielectric loss tangent can be obtained even when the content of the active ester curing agent is low, such as less than 30% by mass, 25% by mass or less, 20% by mass or less, or even 0% by mass (not contained).

[0114] When the resin composition of the present invention contains a curing agent, the content of the curing agent in the resin composition is not particularly limited, but is preferably 3% by mass or more, more preferably 5% by mass or more, even more preferably 10% by mass or more, 15% by mass or more, or 20% by mass or more, when the resin component in the resin composition is 100% by mass. The upper limit of the content of the curing agent is preferably 60% by mass or less, more preferably 50% by mass or less, 45% by mass or less, 40% by mass or less, or 35% by mass or less.

[0115] <Curing accelerator> The resin composition of the present invention may further contain a curing accelerator, which allows for efficient adjustment of the curing time and curing temperature.

[0116] Examples of the curing accelerator include phosphorus-based curing accelerators, urea-based curing accelerators, guanidine-based curing accelerators, imidazole-based curing accelerators, metal-based curing accelerators, and amine-based curing accelerators. From the viewpoint of further enjoying the effects of the present invention, the curing accelerator preferably includes an amine-based curing accelerator or an imidazole-based curing accelerator. The curing accelerators may be used alone or in combination of two or more.

[0117] Examples of the phosphorus-based curing accelerator include aliphatic phosphonium salts such as tetrabutylphosphonium bromide, tetrabutylphosphonium chloride, tetrabutylphosphonium acetate, tetrabutylphosphonium decanoate, tetrabutylphosphonium laurate, bis(tetrabutylphosphonium)pyromellitate, tetrabutylphosphonium hydrogenhexahydrophthalate, tetrabutylphosphonium 2,6-bis[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenolate, and di-tert-butylmethylphosphonium tetraphenylborate; methyltriphenylphosphonium bromide, ethyltriphenylphosphonium bromide, propyltriphenylphosphonium bromide, butyltriphenylphosphonium bromide, benzyltriphenylphosphonium chloride, tetraphenylphosphonium bromide, p-tolyltriphenylphosphonium tetra-p-tolylborate, and tetraphenylphosphonium bromide. aromatic phosphonium salts such as tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, triphenylethylphosphonium tetraphenylborate, tris(3-methylphenyl)ethylphosphonium tetraphenylborate, tris(2-methoxyphenyl)ethylphosphonium tetraphenylborate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, and butyltriphenylphosphonium thiocyanate; aromatic phosphine-borane complexes such as triphenylphosphine-triphenylborane; aromatic phosphine-quinone adducts such as triphenylphosphine-p-benzoquinone adduct; aliphatic phosphines such as tributylphosphine, tri-tert-butylphosphine, trioctylphosphine, di-tert-butyl(2-butenyl)phosphine, di-tert-butyl(3-methyl-2-butenyl)phosphine, and tricyclohexylphosphine;Dibutylphenylphosphine, di-tert-butylphenylphosphine, methyldiphenylphosphine, ethyldiphenylphosphine, butyldiphenylphosphine, diphenylcyclohexylphosphine, triphenylphosphine, tri-o-tolylphosphine, tri-m-tolylphosphine, tri-p-tolylphosphine, tris(4-ethylphenyl)phosphine, tris(4-propylphenyl)phosphine, tris(4-isopropylphenyl)phosphine, tris(4-butylphenyl)phosphine, tris(4-tert-butylphenyl)phosphine, tris(2,4-dimethylphenyl)phosphine, tris(2,5-dimethylphenyl)phosphine, tris(2,6-dimethylphenyl)phosphine aromatic phosphines such as benzene, tris(3,5-dimethylphenyl)phosphine, tris(2,4,6-trimethylphenyl)phosphine, tris(2,6-dimethyl-4-ethoxyphenyl)phosphine, tris(2-methoxyphenyl)phosphine, tris(4-methoxyphenyl)phosphine, tris(4-ethoxyphenyl)phosphine, tris(4-tert-butoxyphenyl)phosphine, diphenyl-2-pyridylphosphine, 1,2-bis(diphenylphosphino)ethane, 1,3-bis(diphenylphosphino)propane, 1,4-bis(diphenylphosphino)butane, 1,2-bis(diphenylphosphino)acetylene, and 2,2'-bis(diphenylphosphino)diphenyl ether;

[0118] Examples of the urea-based curing accelerator include 1,1-dimethylurea; aliphatic dimethylureas such as 1,1,3-trimethylurea, 3-ethyl-1,1-dimethylurea, 3-cyclohexyl-1,1-dimethylurea, and 3-cyclooctyl-1,1-dimethylurea; 3-phenyl-1,1-dimethylurea, 3-(4-chlorophenyl)-1,1-dimethylurea, 3-(3,4-dichlorophenyl)-1,1-dimethylurea, 3-(3-chloro-4-methylphenyl)-1,1-dimethylurea, 3-(2-methylphenyl)-1,1-dimethylurea, 3-(4-methylphenyl)-1,1-dimethylurea, and 3-(3,4-dimethylphenyl)-1,1-dimethylurea. aromatic dimethylureas such as toluene bis(dimethylurea), 3-(4-isopropylphenyl)-1,1-dimethylurea, 3-(4-methoxyphenyl)-1,1-dimethylurea, 3-(4-nitrophenyl)-1,1-dimethylurea, 3-[4-(4-methoxyphenoxy)phenyl]-1,1-dimethylurea, 3-[4-(4-chlorophenoxy)phenyl]-1,1-dimethylurea, 3-[3-(trifluoromethyl)phenyl]-1,1-dimethylurea, N,N-(1,4-phenylene)bis(N',N'-dimethylurea), and N,N-(4-methyl-1,3-phenylene)bis(N',N'-dimethylurea) [toluene bisdimethylurea].

[0119] Examples of guanidine curing accelerators include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7-methyl-1,5,7-triazabicyclo[4.4.0]dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, and 1-(o-tolyl)biguanide.

[0120] Examples of the imidazole curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, and 1-benzyl-2-methylimidazole. Phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl -(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct , 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline, and other imidazole compounds, as well as adducts of imidazole compounds with epoxy resins.

[0121] As the imidazole-based curing accelerator, commercially available products may be used, such as "1B2PZ", "2E4MZ", "2MZA-PW", "2MZ-OK", "2MA-OK", "2MA-OK-PW", "2P4MZ", "2PHZ", "2PHZ-PW", "Cl1Z", "Cl1Z-CN", "Cl1Z-CNS", and "C11Z-A" manufactured by Shikoku Chemicals Corporation; and "P200-H50" manufactured by Mitsubishi Chemical Corporation. These may be used alone or in combination of two or more.

[0122] Examples of metal-based curing accelerators include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of organometallic complexes include organic cobalt complexes such as cobalt(II) acetylacetonate and cobalt(III) acetylacetonate, organic copper complexes such as copper(II) acetylacetonate, organic zinc complexes such as zinc(II) acetylacetonate, organic iron complexes such as iron(III) acetylacetonate, organic nickel complexes such as nickel(II) acetylacetonate, and organic manganese complexes such as manganese(II) acetylacetonate. Examples of organometallic salts include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

[0123] Examples of the amine-based curing accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine (DMAP), benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 1,8-diazabicyclo(5,4,0)-undecene, etc. Commercially available amine-based curing accelerators may be used, such as "MY-25" manufactured by Ajinomoto Fine-Techno Co., Inc.

[0124] When the resin composition of the present invention contains a curing accelerator, the content of the curing accelerator in the resin composition is not particularly limited, but is preferably 0.01% by mass or more, more preferably 0.03% by mass or more, and even more preferably 0.05% by mass or more, when the resin component in the resin composition is 100% by mass, and the upper limit is preferably 3% by mass or less, more preferably 2% by mass or less, 1.5% by mass or less, or 1% by mass or less.

[0125] <Maleimide resin> The resin composition of the present invention may further contain a maleimide resin. The maleimide resin may be used alone or in combination of two or more.

[0126] Maleimide resins include: (E1) a maleimide resin containing an aliphatic group having 5 or more carbon atoms directly bonded to a nitrogen atom of the maleimide; (E2) a maleimide resin containing a trimethylindane skeleton, and (E3) a maleimide resin having an aromatic ring directly bonded to a nitrogen atom of the maleimide; It is preferable that the compound is one or more selected from the following:

[0127] Here, the term "directly" means that, in the case of component (E1), there is no other group between the nitrogen atom of the maleimide and the aliphatic group having 5 or more carbon atoms, and in the case of component (E3), there is no other group between the nitrogen atom of the maleimide and the aromatic ring.

[0128] The maleimide resin, whether it is component (E1), component (E2), or component (E3), preferably has two or more maleimide groups (2,5-dihydro-2,5-dioxo-1H-pyrrol-1-yl groups) in one molecule.

[0129] The components (E1), (E2), and (E3), which are preferred embodiments of the maleimide resin, will be explained below. In the following, the term "substituent" is as defined in <Explanation of Terms> above.

[0130] <Component (E1)> The component (E1) is a maleimide resin containing an aliphatic group having 5 or more carbon atoms directly bonded to a nitrogen atom of the maleimide. Such a maleimide resin can be obtained, for example, by subjecting a component containing an aliphatic amine compound (such as a dimer diamine compound), maleic anhydride, and, if necessary, tetracarboxylic dianhydride to an imidization reaction.

[0131] In one embodiment, the component (E1) includes a compound represented by the following formula (E1-1):

[0132] [ka]

[0133] In formula (E1-1), A 1 represents an aliphatic group having 5 or more carbon atoms which may have a substituent, L 1 represents a single bond or a divalent linking group, nB1 represents an integer from 0 to 20. 1 If there are multiple, they may be the same or different, and L 1 When there are multiple, they may be the same or different.

[0134] A 1 The number of carbon atoms in the aliphatic group represented by the formula (I) is 5 or more, and preferably 10 or more, 15 or more, or 20 or more. There is no particular upper limit to the number of carbon atoms, but it may be, for example, 100 or less, 80 or less, 60 or less, or 50 or less. Note that the number of carbon atoms does not include the number of carbon atoms of substituents.

[0135] In one embodiment, A 1 is a divalent group represented by the following formula (E1-2).

[0136] [ka]

[0137] In formula (E1-2), A 11 represents a single bond, an alkylene group, or an alkenylene group (preferably an alkylene group or an alkenylene group), Ring Z 1 represents a non-aromatic ring optionally having a group selected from an alkyl group and an alkenyl group (preferably a cycloalkane ring or cycloalkene ring optionally having a group selected from an alkyl group and an alkenyl group), nB11 represents an integer of 0 to 3 (preferably 0 or 1, more preferably 1), * indicates the binding site. 11 Yakan Z 1 Each of A may independently have a substituent. 11 When there are multiple rings, they may be the same or different, and the ring Z 1 When there are multiple, they may be the same or different.

[0138] L 1 Examples of the divalent linking group represented by the formula (E1-3) include divalent organic groups (preferably divalent ring-containing organic groups (e.g., aromatic or non-aromatic rings)) consisting of two or more (e.g., 2 to 3000, 2 to 1000, 2 to 100, or 2 to 50) skeletal atoms selected from carbon atoms, oxygen atoms, nitrogen atoms, and sulfur atoms, and among these, divalent groups represented by the formula (E1-3) below are preferred.

[0139] [ka]

[0140] In formula (E1-3), A 12 represents a single bond or a divalent group consisting of one or more (e.g., 1 to 3000, 1 to 1000, 1 to 100, or 1 to 50) skeletal atoms selected from carbon atoms, oxygen atoms, nitrogen atoms, and sulfur atoms, R B1 and R B2 each independently represents a substituent, nB12 represents 0 or 1; nB13 and nB14 each independently represent an integer of 0 to 3 (preferably 0 or 1), * indicates the binding site. B1 If there are multiple, they may be the same or different, and R B2 When there are multiple, they may be the same or different.

[0141] When nB12 is 0, the divalent group represented by formula (E1-3) represents a divalent group having a structure represented by the following formula (E1-4): B1 , nB13 and * are as explained in formula (E1-3).

[0142] [ka]

[0143] In the embodiment where nB12 in formula (E1-3) is 1, A 12 The divalent group represented by the following formula (E1-5) is preferred as the divalent group represented by the following formula (E1-5).

[0144] [ka]

[0145] In formula (E1-5), Y 1 represents a single bond, an alkylene group, an alkenylene group, -O-, -CO-, -S-, -SO-, -SO2-, -CONH-, -NHCO-, -COO-, or -OCO-; Ring Z 2 represents an optionally substituted non-aromatic ring or an optionally substituted aromatic ring, nB15 represents an integer of 0 to 5 (preferably 0 to 3), * indicates the binding site. Y 1 Yakan Z 2 Each of Y may independently have a substituent. 1 When there are multiple rings, they may be the same or different, and the ring Z 2When there are multiple, they may be the same or different.

[0146] A 12 Specific examples of the divalent group represented by the formula (I) include, but are not limited to, -CH2-, -CH(CH3)-, -CH(CH2CH3)-, -C(CH3)2-, -C(CH3)(CH2CH3)-, -C(CH2CH3)2-, -O-, -CO-, -S-, -SO-, and -SO2-, as well as the divalent organic groups represented by the formula (I) below. [ka]

[0147] The weight average molecular weight (Mw) of component (E1) is not particularly limited, but is preferably 150 to 50,000, more preferably 300 to 20,000. More specifically, in an embodiment in which nB1 in formula (E1-1) is an integer of 1 or greater, it is preferably 500 to 50,000, more preferably 1,000 to 20,000, and in an embodiment in which nB1 is 0, it is preferably 150 to 5,000, more preferably 300 to 1,000. The Mw of component (E1) can be measured as a polystyrene-equivalent value by gel permeation chromatography (GPC).

[0148] Furthermore, with regard to the component (E1), the functional group equivalent of the maleimide group is preferably 50 to 20,000 g / eq, more preferably 100 to 20,000 g / eq. More specifically, in an embodiment in which nB1 in formula (E1-1) is an integer of 1 or greater, it is preferably 300 g / eq to 20,000 g / eq, more preferably 500 g / eq to 10,000 g / eq. In an embodiment in which nB1 is 0, it is preferably 50 g / eq to 2,000 g / eq, more preferably 100 g / eq to 1,000 g / eq, even more preferably 200 g / eq to 600 g / eq, and particularly preferably 300 g / eq to 400 g / eq.

[0149] In order to provide a cured product that, when combined with Resin X, can suppress warpage, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, it is preferable that component (E1) contain a maleimide resin having any of the following structures: Formula (E1-6), Formula (E1-7), and Formula (E1-8).

[0150] [ka]

[0151] In formula (E1-6), A 11 and ring Z 1 is as explained above, and A 11 -Ring Z 1 -A 11 The number of carbon atoms per block is preferably 20 to 100 (more preferably 30 to 60 or 30 to 50), and a so-called dimer acid skeleton (C36 skeleton; C36 alkylene skeleton derived from dimer diamine) is particularly preferred. nB16 represents an integer of 1 to 10.

[0152] [ka] In formula (E1-7), A 11 , Y 1 , ring Z 1 , ring Z 2 and nB15 are as described above, and A 11 -Ring Z 1 -A 11 The number of carbon atoms per block is preferably 20 to 100 (more preferably 30 to 60 or 30 to 50), and it is particularly preferably a so-called dimer acid skeleton (C36 skeleton; C36 alkylene skeleton derived from dimer diamine). In addition, the block consisting of nB15+1 Y1 and nB15 rings Z2 is preferably a divalent group A 12 Among them, a divalent group containing an oxygen atom is preferable. nB17 represents an integer of 1 to 10.

[0153] [ka]

[0154] In formula (E1-8), A 11 and ring Z 1 is as explained above, and A 11 -Ring Z 1 -A 11 The number of carbon atoms per block is preferably 20 to 100 (more preferably 30 to 60 or 30 to 50), and it is particularly preferably a so-called dimer acid skeleton (C36 skeleton; C36 alkylene skeleton derived from dimer diamine). nB11 represents an integer of 0 to 10.

[0155] Commercially available maleimide resins having the structure represented by formula (E1-6) include, for example, "BMI-3000J" and "BMI-5000" manufactured by Designer Molecules, Inc. Commercially available maleimide resins having the structure represented by formula (E1-7) include, for example, "BMI-1400," "BMI-1500," and "BMI-1700" manufactured by Designer Molecules, Inc. Commercially available maleimide resins having the structure represented by formula (E1-8) include, for example, "BMI-689" manufactured by Designer Molecules, Inc.

[0156] <(E2) component> The component (E2) is a maleimide resin containing a trimethylindane skeleton, which is represented by the following formula (E2-1):

[0157] [ka]

[0158] The benzene ring in the trimethylindane skeleton may have a substituent. When the benzene ring in the trimethylindane skeleton has a substituent, the number of the substituents may be 1 or 2 or more. The upper limit of the number of substituents that the benzene ring in the trimethylindane skeleton has is usually 3 or less. When the number of substituents is 2 or more, they may be the same or different. In particular, it is preferable that the benzene ring in the trimethylindane skeleton has no substituent.

[0159] The number of trimethylindane skeletons contained in one molecule of the component (E2) may be 1 or may be 2 or more. The upper limit can be, for example, 10 or less, 8 or less, 7 or less, or 6 or less.

[0160] The component (E2) preferably further contains an aromatic ring skeleton in addition to the trimethylindane skeleton. The aromatic ring skeleton may be either a carbon ring skeleton or a heterocyclic ring skeleton, with a carbon ring skeleton being more preferred. The number of ring carbon atoms in the aromatic ring skeleton is preferably 3 to 20, more preferably 4 to 16, 5 to 14, or 6 to 10. Examples of aromatic ring skeletons include a benzene ring skeleton, a naphthalene ring skeleton, and an anthracene ring skeleton. The number of aromatic ring skeletons contained in one molecule of the component (E2) is preferably 1 or more, more preferably 2 or more, and preferably 6 or less, more preferably 4 or less, and even more preferably 3 or less. When the component (E2) contains two or more aromatic ring skeletons in addition to the trimethylindane skeleton, these aromatic ring skeletons may be the same or different.

[0161] The aromatic ring skeleton may have a substituent. When the aromatic ring skeleton has a substituent, the number of the substituent may be 1 or 2 or more. The upper limit of the number of the substituents that the aromatic ring skeleton has is usually 4 or less. When the number of the substituents is 2 or more, they may be the same or different from each other.

[0162] The component (E2) preferably contains a divalent aliphatic hydrocarbon group in addition to the trimethylindane skeleton. In particular, when the component (E2) contains an aromatic ring skeleton in addition to the benzene ring in the trimethylindane skeleton, the component (E2) preferably contains a divalent aliphatic hydrocarbon group. In this case, the divalent aliphatic hydrocarbon group preferably connects the benzene ring in the trimethylindane skeleton to the aromatic ring skeleton. Furthermore, the divalent aliphatic hydrocarbon group preferably connects the aromatic ring skeletons together.

[0163] The divalent aliphatic hydrocarbon group preferably has one or more carbon atoms, and preferably 12 or less, more preferably 8 or less, and even more preferably 5 or less. The divalent aliphatic hydrocarbon group may be either a divalent saturated hydrocarbon group or a divalent unsaturated hydrocarbon group, with a divalent saturated hydrocarbon group being preferred, and an alkylene group being more preferred. Examples of the divalent aliphatic hydrocarbon group include linear alkylene groups such as methylene, ethylene, trimethylene, tetramethylene, pentamethylene, and hexamethylene; and branched alkylene groups such as ethylidene (-CH(CH)-), propylidene (-CH(CHCH)-), isopropylidene (-C(CH)-), ethylmethylmethylene (-C(CH)(CHCH)-), and diethylmethylene (-C(CHCH)-). When the component (E2) contains two or more divalent aliphatic hydrocarbon groups in addition to the trimethylindane skeleton, these divalent aliphatic hydrocarbon groups may be the same or different.

[0164] From the viewpoint of providing a cured product that, when combined with Resin X, can suppress warpage, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, it is preferable that component (E2) contain a structure represented by formula (E2-2) below. The entire component (E2) may have the structure represented by formula (E2-2), or only a part of component (E2) may have the structure represented by formula (E2-2).

[0165] [ka]

[0166] In formula (E2-2), Ar a1 represents a divalent aromatic ring group which may have a substituent, R a1 and R a2 each independently represents a substituent, R a3 represents a divalent aliphatic hydrocarbon group, n a1 represents a positive integer, n a2 each independently represents an integer of 0 to 4, n a3 R each independently represents an integer of 0 to 3. a1 If there are multiple, they may be the same or different, and R a2 If there are multiple R a3 may be the same or different from each other.

[0167] Ar a1 represents a divalent aromatic ring group which may have a substituent. The divalent aromatic ring group preferably has 6 or more carbon atoms and preferably 20 or less, more preferably 16 or less, 14 or less, or 10 or less. Examples of the divalent aromatic ring group include a phenylene group and a naphthylene group. Examples of the substituent which the divalent aromatic ring group may have include the aforementioned substituents, among which an alkyl group having 1 to 10 carbon atoms, an alkyloxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an aryloxy group having 6 to 10 carbon atoms, an arylthio group having 6 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, a halogen atom, a hydroxy group, and a mercapto group are preferred. The hydrogen atom of each substituent may be further substituted with a halogen atom. When the divalent aromatic ring group has a substituent, the number of the substituents is preferably 1 to 4. When the divalent aromatic ring group has two or more substituents, the two or more substituents may be the same or different. a1is preferably a divalent aromatic ring group that does not have a substituent.

[0168] R a1 represents a substituent. a1 Examples of the substituent represented by the formula (I) include the substituents described above, and among these, preferred are an alkyl group having 1 to 10 carbon atoms, an alkyloxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an aryloxy group having 6 to 10 carbon atoms, an arylthio group having 6 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, a halogen atom, a nitro group, a hydroxy group, and a mercapto group. The hydrogen atom of each substituent may be further substituted with a halogen atom.

[0169] Among them, R a1 is more preferably one or more groups selected from the group consisting of alkyl groups having 1 to 4 carbon atoms, cycloalkyl groups having 3 to 6 carbon atoms, and aryl groups having 6 to 10 carbon atoms, and is even more preferably an alkyl group having 1 to 4 carbon atoms.

[0170] R a2 represents a substituent. a2 Examples of the substituent represented by the formula (I) include the substituents described above, and among these, an alkyl group having 1 to 10 carbon atoms, an alkyloxy group having 1 to 10 carbon atoms, an alkylthio group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an aryloxy group having 6 to 10 carbon atoms, an arylthio group having 6 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, a halogen atom, a hydroxy group, and a mercapto group are preferred. The hydrogen atom of each substituent may be further substituted with a halogen atom.

[0171] Among them, R a2 is more preferably one or more groups selected from the group consisting of alkyl groups having 1 to 4 carbon atoms, cycloalkyl groups having 3 to 6 carbon atoms, and aryl groups having 6 to 10 carbon atoms.

[0172] R a3represents a divalent aliphatic hydrocarbon group. The preferred range of the divalent aliphatic hydrocarbon group is as described above.

[0173] n a1 represents a positive integer. a1 is preferably 1 or more, preferably 10 or less, and more preferably 8 or less.

[0174] n a2 Each of n independently represents an integer of 0 to 4. a2 is preferably 2 or 3, more preferably 2. a2 may be different from each other, but are preferably the same. a2 If is 2 or more, multiple R a1 may be the same or different from each other.

[0175] n a3 represents an integer of 0 to 3. a3 When there are a plurality of n, they may be different from each other, but are preferably the same. a3 is preferably 0.

[0176] From the viewpoint of providing a cured product that can suppress warpage when combined with Resin X, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, it is more preferable that component (E2) contain a structure represented by formula (E2-3) below. The entire component (E2) may have the structure represented by formula (E2-3), or only a part of component (E2) may have the structure represented by formula (E2-3).

[0177] [ka]

[0178] In formula (E2-3), R a1 , R a2 , n a1 , n a2 and n a3 is as explained in equation (E2-2).

[0179] The component (E2) may further contain a structure represented by the following formula (E2-4).

[0180] [ka]

[0181] In formula (E2-4), R a1 , R a2 , n a2 and n a3 is as explained in formula (E2-2). c1 is the number of repeating units and represents an integer of 1 to 20. * represents a bond.

[0182] For example, the component (E2) is a compound represented by the formula (E2-2): a2 is 3 or less, and R is present at two or more of the ortho and para positions relative to the maleimide group bonding position of the benzene ring to which the maleimide group is bonded. a1 When is not bonded, the structure represented by formula (E2-2) may contain the structure represented by formula (E2-4) in combination.

[0183] Furthermore, for example, the component (E2) may be a compound represented by the formula (E2-3), where n a2 is 3 or less, and R is present at two or more of the ortho and para positions relative to the maleimide group bonding position of the benzene ring to which the maleimide group is bonded. a1 When is not bonded, the structure represented by formula (E2-3) may contain the structure represented by formula (E2-4) in combination.

[0184] The method for producing component (E2) is not particularly limited, and it may be produced, for example, by the method described in Japan Institute of Invention and Innovation's Disclosure Technical Bulletin No. 2020-500211. According to the production method described in Japan Institute of Invention and Innovation's Disclosure Technical Bulletin No. 2020-500211, a maleimide resin having a distribution in the number of repeating units of the trimethylindane skeleton can be obtained. The maleimide resin obtained by this method contains a structure represented by the following formula (E2-5). Therefore, the maleimide resin may contain a maleimide resin containing a structure represented by formula (E2-5).

[0185] [ka]

[0186] In formula (E2-5), R 1 , R 2 , n2 and n3 are R in formula (E2-2), respectively. a1 , R a2 , n a2 and n a3 The preferred types and ranges are also the same as those in the above. n1 represents the average number of repeating units of 0.95 to 10.0.

[0187] In formula (E2-5), n1 represents the average number of repeating units, ranging from 0.95 to 10.0. According to the manufacturing method described in Japan Institute of Invention and Innovation's Technical Bulletin No. 2020-500211, a group of maleimide resins containing the structure represented by formula (E2-5) can be obtained. Since the average number of repeating units, n1, in formula (E2-5) can be less than 1.00, the maleimide resin containing the structure represented by formula (E2-5) thus obtained may contain a maleimide resin having zero repeating units in the trimethylindane skeleton. Therefore, the maleimide resin containing the structure represented by formula (E2-5) may be purified to remove the maleimide resin having zero repeating units in the trimethylindane skeleton, thereby obtaining component (E2). The resin composition may contain only the obtained component (E2). Alternatively, the resin composition may contain a maleimide resin containing the structure represented by formula (E2-5) without removing the maleimide resin having zero repeating units in the trimethylindane skeleton.

[0188] In formula (E2-5), the average number of repeating units n1 is preferably 0.95 or more, more preferably 0.98 or more, even more preferably 1.0 or more, particularly preferably 1.1 or more, and is preferably 10.0 or less, more preferably 8.0 or less, even more preferably 7.0 or less, particularly preferably 6.0 or less. When the average number of repeating units n1 is within this range, the effects of the present invention can be significantly achieved.

[0189] Among these, specific examples of the structure of component (E2) include the following:

[0190] [ka]

[0191] The maleimide resin containing the structure represented by formula (E2-5) may further contain the structure represented by formula (E2-4). For example, the maleimide resin containing the structure represented by formula (E2-5) may be a maleimide resin in which n2 is 3 or less and R is present at two or more of the ortho and para positions relative to the maleimide group bonding position of the benzene ring to which the maleimide group is bonded. 1 When is not bonded, the structure represented by formula (E2-5) may contain the structure represented by formula (E2-4) in combination.

[0192] The maleimide resin containing the structure represented by formula (E2-5) preferably has a molecular weight distribution Mw / Mn calculated by gel permeation chromatography (GPC) measurement within a specific range. Specifically, the molecular weight distribution Mw / Mn of the maleimide resin containing the structure represented by formula (E2-5) is preferably 1.0 to 4.0, more preferably 1.1 to 3.8, even more preferably 1.2 to 3.6, and particularly preferably 1.3 to 3.4.

[0193] With respect to the component (E2), the functional group equivalent of the maleimide group is preferably 50 g / eq. or more, more preferably 100 g / eq. or more, even more preferably 200 g / eq. or more, and is preferably 2000 g / eq. or less, more preferably 1000 g / eq. or less, even more preferably 800 g / eq. or less.

[0194] <(E3) component> Component (E3) is a maleimide resin having an aromatic ring directly bonded to a nitrogen atom of the maleimide. Such a maleimide resin can be obtained, for example, by subjecting a component containing an aromatic amine compound (such as an aromatic diamine compound) and maleic anhydride to an imidization reaction.

[0195] In one embodiment, the component (E3) includes a compound represented by the following formula (E3-1):

[0196] [ka]

[0197] In formula (E3-1), Ring Ar 1 represents an aromatic ring which may have a substituent, L 2 represents a single bond or a divalent linking group, nB2 represents an integer of 1 to 100. 1 may be the same or different, and L 2 When there are multiple, they may be the same or different.

[0198] Ring Ar 1 The aromatic ring represented by the formula (I) may be either a carbocyclic ring or a heterocyclic ring, but a carbocyclic ring is more preferred. 1 The number of carbon atoms in the aromatic ring represented by the formula (I) is preferably 3 to 20, more preferably 5 to 14 or 6 to 10. The number of carbon atoms does not include the number of carbon atoms in the substituent.

[0199] L 2The divalent linking group represented by the formula (E1-3) is not particularly limited as long as it is a divalent group consisting of one or more (for example, 1 to 3000, 1 to 1000, 1 to 100, or 1 to 50) skeletal atoms selected from carbon atoms, oxygen atoms, nitrogen atoms, and sulfur atoms. For example, A 12 Examples of the divalent group include the divalent group shown below.

[0200] Among them, the ring Ar 1 is preferably an aromatic carbocyclic ring having 6 to 10 carbon atoms which may have a substituent (more preferably a benzene ring which may have a substituent), and L 2 (L 2 If there are multiple L 2 is preferably a divalent group having a biphenyl skeleton. Thus, in one embodiment, the component (E3) has a biphenyl skeleton.

[0201] In the component (E3), the nitrogen atom of the maleimide and the aromatic ring are directly bonded. The bonding position of the maleimide and the aromatic ring is the same as that of the L bonded to the aromatic ring. 2 For example, when the aromatic ring is a benzene ring, the bonding position of maleimide to the benzene ring may be any position based on the position of L bonded to the benzene ring. 2 Based on this, the bond may be at any of the ortho, meta, and para positions, but bonding at the para position is preferred from the viewpoint of being able to enjoy the effects of the present invention more effectively.

[0202] In a preferred embodiment, the component (E3) includes a compound represented by the following formula (E3-2):

[0203] [ka]

[0204] In formula (E3-2), R B3 , R B4 , R B5 and R B6 each independently represents a substituent, nB21 represents an integer from 1 to 100, nB22 and nB23 each independently represent an integer of 1 to 10, nB24 and nB25 each independently represent an integer of 0 to 3, nB26 and nB27 each independently represent an integer of 0 to 4. B3 If there are multiple, they may be the same or different, which means that R B4 , R B5 and R B6 The same is true for .

[0205] nB21 is preferably 1-50, more preferably 1-20, and even more preferably 1-5.

[0206] nB22 and nB23 each independently represent preferably 1 to 6, more preferably 1 to 3, and even more preferably 1 or 2.

[0207] nB24 and nB25 are each independently preferably an integer of 0 to 2, more preferably 0 or 1. When nB24 and nB25 are 1 or more, R B3 and R B4 Each of the substituents represented by the following formula (I) is preferably an alkyl group or an aryl group.

[0208] nB26 and nB27 are each independently preferably an integer of 0 to 2, more preferably 0 or 1. When nB26 and nB27 are 1 or more, R B5 and R B6 Each of the substituents represented by the following formula (I) is preferably an alkyl group or an aryl group.

[0209] Of these, nB26 and nB27 are preferably 0. Therefore, in one preferred embodiment, the component (E3) includes a compound represented by the following formula (E3-3).

[0210] [ka]

[0211] In formula (E3-3), R B3 , R B4 , nB21, nB22, nB23, nB24, and nB25 are as explained in formula (E3-2).

[0212] When the component (E3) has a molecular weight distribution, the weight average molecular weight (Mw) is at least 500, and preferably at least 550. There are no particular limitations on the upper limit of Mw, but it is preferably not more than 5000, and more preferably not more than 2500. The Mw of the component (E3) can be measured as a polystyrene-equivalent value by gel permeation chromatography (GPC).

[0213] Furthermore, for the component (E3), the functional group equivalent of the maleimide group is preferably 50 g / eq. to 2000 g / eq., more preferably 100 g / eq. to 1000 g / eq., even more preferably 150 g / eq. to 500 g / eq., and particularly preferably 200 g / eq. to 300 g / eq.

[0214] In order to provide a cured product that, when combined with Resin X, can suppress warpage, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, it is preferable that Component (E3) contains a maleimide resin having a structure represented by the following formula (E3-4):

[0215] [ka]

[0216] In formula (E3-4), nB21 is as explained above.

[0217] Commercially available maleimide resins having the structure represented by formula (E3-4) include, for example, "MIR-3000-70MT" manufactured by Nippon Kayaku Co., Ltd. As the component (E3), compounds represented by formula (E3-1) such as "BMI-4000" manufactured by Daiwa Kasei Co., Ltd. and "BMI-80" manufactured by Keiai Kasei Co., Ltd. may also be used.

[0218] When the resin composition of the present invention contains a maleimide resin, the content of the maleimide resin in the resin composition is preferably 0.5% by mass or more, more preferably 1% by mass or more, and even more preferably 2% by mass or more, 4% by mass or more, or 5% by mass or more, when the resin component in the resin composition is taken as 100% by mass. The upper limit of the content is not particularly limited and may be determined depending on the properties required of the resin composition, but may be, for example, 30% by mass or less, 25% by mass or less, or 20% by mass or less.

[0219] <Optional additives> The resin composition of the present invention may further contain any additives. Examples of such additives include thermoplastic resins such as phenoxy resins, polyvinyl acetal resins, polysulfone resins, polyethersulfone resins, polyetheretherketone resins, and polyester resins; organic fillers such as rubber particles; radical polymerization initiators such as peroxide-based radical polymerization initiators and azo-based radical polymerization initiators; organometallic compounds such as organocopper compounds, organozinc compounds, and organocobalt compounds; colorants such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium oxide, and carbon black; polymerization inhibitors such as hydroquinone, catechol, pyrogallol, and phenothiazine; leveling agents such as silicone-based leveling agents and acrylic polymer-based leveling agents; thickeners such as bentone and montmorillonite; antifoaming agents such as silicone-based antifoaming agents, acrylic-based antifoaming agents, fluorine-based antifoaming agents, and vinyl resin-based antifoaming agents; and benzotriazole-based UV light absorbers. adhesion promoters such as triazole-based adhesion promoters, tetrazole-based adhesion promoters, and triazine-based adhesion promoters; antioxidants such as hindered phenol-based antioxidants; fluorescent brighteners such as stilbene derivatives; surfactants such as fluorine-based surfactants and silicone-based surfactants; flame retardants such as phosphorus-based flame retardants (e.g., phosphate ester compounds, phosphazene compounds, phosphinic acid compounds, and red phosphorus), nitrogen-based flame retardants (e.g., melamine sulfate), halogen-based flame retardants, and inorganic flame retardants (e.g., antimony trioxide); dispersants such as phosphate ester-based dispersants, polyoxyalkylene-based dispersants, acetylene-based dispersants, silicone-based dispersants, anionic dispersants, and cationic dispersants; and stabilizers such as borate-based stabilizers, titanate-based stabilizers, aluminate-based stabilizers, zirconate-based stabilizers, isocyanate-based stabilizers, carboxylic acid-based stabilizers, and carboxylic acid anhydride-based stabilizers. The content of such additives may be determined depending on the properties required for the resin composition.

[0220] <Organic solvents> The resin composition of the present invention may further contain an organic solvent as a volatile component. Examples of the organic solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; ester solvents such as methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, isoamyl acetate, methyl propionate, ethyl propionate, and γ-butyrolactone; ether solvents such as tetrahydropyran, tetrahydrofuran, 1,4-dioxane, diethyl ether, diisopropyl ether, dibutyl ether, and diphenyl ether; alcohol solvents such as methanol, ethanol, propanol, butanol, and ethylene glycol; 2-ethoxyethyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl diglycol acetate, γ-butyrolactone, and methyl methoxypropionate. Examples of suitable organic solvents include ether ester solvents such as ethanol; ester alcohol solvents such as methyl lactate, ethyl lactate, and methyl 2-hydroxyisobutyrate; ether alcohol solvents such as 2-methoxypropanol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol monomethyl ether, and diethylene glycol monobutyl ether (butyl carbitol); amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; sulfoxide solvents such as dimethyl sulfoxide; nitrile solvents such as acetonitrile and propionitrile; aliphatic hydrocarbon solvents such as hexane, cyclopentane, cyclohexane, and methylcyclohexane; and aromatic hydrocarbon solvents such as benzene, toluene, xylene, ethylbenzene, and trimethylbenzene. These organic solvents may be used singly or in combination of two or more.

[0221] The resin composition of the present invention can be produced, for example, by adding the oligophenylene ether skeleton-containing resin X, the thermosetting resin, the inorganic filler, and, if necessary, the curing agent, the curing accelerator, the maleimide resin, other additives, and the organic solvent to any preparation vessel in any order and / or all at once and mixing them. The temperature can be appropriately set during the process of adding and mixing the components, and heating and / or cooling may be performed temporarily or throughout the process. During or after the process of adding and mixing the components, the thermosetting resin composition may be stirred or shaken using a stirring or shaking device such as a mixer to uniformly disperse the composition. Simultaneously with the stirring or shaking, degassing may be performed under low-pressure conditions, such as under vacuum.

[0222] The resin composition of the present invention comprises a thermosetting resin, an inorganic filler, and an oligophenylene ether skeleton-containing resin X having a glass transition temperature of 25°C or lower, and the cured product has a stud-pull adhesion strength of 600 kgf / cm. 2 Such a resin composition can suppress warping, and can provide a cured product that exhibits good dielectric properties and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment.

[0223] From the viewpoint of providing a cured product that can suppress warping, exhibits good dielectric properties, and maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, the cured product of the resin composition of the present invention has a stud-pull adhesion strength of 600 kgf / cm 2 For example, in accordance with the method described in (1) Test conditions in "2. Stud pull test" below, a stud pin is attached to the cured layer of the resin composition of an evaluation board prepared using the resin composition of the present invention, and the stud pin is pulled in a direction perpendicular to the main surface of the cured layer at a rate of 2 kgf / sec using a stud pull tester ("ROMULUS" manufactured by Quad Group Inc.). The load value (kgf / cm) at which the cured layer peels off is 2 ) (This value is evaluated as the adhesion strength (stud-pull adhesion strength)) is 600 kgf / cm 2 or more, preferably 700 kgf / cm2 More preferably, 750 kgf / cm 2 or more, or 800kgf / cm 2 The upper limit of the stud-pull adhesion strength is not particularly limited, and is, for example, 1200 kgf / cm 2 Below, 1150kgf / cm 2 Below, 1100kgf / cm 2 It could be something like the following:

[0224] The resin composition of the present invention can suppress warpage when a cured layer (insulating layer) of the resin composition is formed on a substrate such as a silicon wafer. For example, when a laminate is produced and the amount of warpage is measured as described in the section <Evaluation of Warpage> below, the amount of warpage can be preferably less than 2500 μm, more preferably 2000 μm or less, and even more preferably 1800 μm or less, 1600 μm or less, or 1500 μm or less.

[0225] A cured product of the resin composition of the present invention can exhibit a low dielectric loss tangent. For example, when measured at 5.8 GHz and 23°C by the method described in the section <Measurement of Dielectric Loss Tangent> below, the dielectric loss tangent (Df) of the cured product of the resin composition is preferably less than 0.004, more preferably 0.0038 or less, or 0.0036 or less, and even more preferably 0.0035 or less.

[0226] The resin composition of the present invention can maintain good strength at break even after a cured product thereof has undergone a reliability test (HAST). For example, as described in the section below entitled "Evaluation of Strength at Break," two cured products of the resin composition of the present invention were prepared, one exposed to a high-temperature, high-humidity HAST environment (130°C, 85% RH) for 100 hours, and the other not exposed. A tensile test was performed using a Tensilon universal testing machine ("RTC-1250A" manufactured by Orientec Co., Ltd.) in accordance with Japanese Industrial Standards (JIS K7127) to measure the strength at break (%) at 23°C. The decrease in strength at break between before and after HAST can be preferably 10% or less, more preferably 7% or less, and even more preferably 5% or less, or 4% or less.

[0227] The resin composition of the present invention can suppress warpage, exhibit good dielectric properties, and produce a cured product that maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment. Therefore, the resin composition of the present invention can be suitably used as a resin composition for forming an encapsulation layer on a semiconductor chip in a semiconductor chip package (a resin composition for semiconductor encapsulation). The resin composition of the present invention can also be suitably used as a resin composition for forming an insulating layer of a printed wiring board (a resin composition for an insulating layer of a printed wiring board), and more suitably as a resin composition for forming an interlayer insulating layer of a printed wiring board (a resin composition for an interlayer insulating layer of a printed wiring board). The resin composition of the present invention can also be suitably used when the printed wiring board is a circuit board with built-in components. The resin composition of the present invention can also be suitably used as a resin composition for forming an insulating layer of a rewiring board in a semiconductor chip package (a resin composition for an insulating layer of a rewiring board). In the present invention, printed wiring boards and rewiring boards are collectively referred to as "circuit boards," and therefore the resin composition of the present invention can be suitably used for the insulating layer of a circuit board.

[0228] The resin composition of the present invention can further be used in a wide range of applications requiring a resin composition, such as sheet-like laminate materials such as resin sheets and prepregs, solder resists, underfill materials, die bonding materials, hole filling resins, sealing resins, and component embedding resins.

[0229] [Sheet-type laminated materials (resin sheets, prepregs)] The resin composition of the present invention can be used as it is, but may also be used in the form of a sheet-like laminate material containing the resin composition.

[0230] As the sheet-like laminate material, the following resin sheets and prepregs are preferred.

[0231] In one embodiment, the resin sheet includes a support and a layer of a resin composition (hereinafter simply referred to as a "resin composition layer") provided on the support, and is characterized in that the resin composition layer is formed from the resin composition of the present invention.

[0232] The thickness of the resin composition layer varies depending on the application, and may be appropriately determined depending on the application. For example, from the viewpoint of thinning printed wiring boards and semiconductor chip packages, the thickness of the resin composition layer is preferably 400 μm or less, 300 μm or less, 200 μm or less, 100 μm or less, 80 μm or less, 60 μm or less, 50 μm or less, 40 μm or less, or 30 μm or less. The lower limit of the thickness of the resin composition layer is not particularly limited, but can usually be 1 μm or more, 5 μm or more, etc.

[0233] Examples of the support include a thermoplastic resin film, a metal foil, and a release paper, and a thermoplastic resin film or a metal foil is preferred. Therefore, in a preferred embodiment, the support is a thermoplastic resin film or a metal foil.

[0234] When a thermoplastic resin film is used as the support, examples of the thermoplastic resin include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), acrylics such as polycarbonate (PC) and polymethyl methacrylate (PMMA), cyclic polyolefins, triacetyl cellulose (TAC), polyether sulfide (PES), polyether ketone, polyimide, etc. Among these, polyethylene terephthalate and polyethylene naphthalate are preferred, with inexpensive polyethylene terephthalate being particularly preferred.

[0235] When a metal foil is used as the support, examples of the metal foil include copper foil and aluminum foil, with copper foil being preferred. The copper foil may be a foil made of a single metal, copper, or an alloy of copper and another metal (e.g., tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.).

[0236] The surface of the support to be bonded to the resin composition layer may be subjected to a matte treatment, a corona treatment, or an antistatic treatment. Alternatively, a support having a release layer on the surface to be bonded to the resin composition layer may be used as the support. Examples of the release agent used in the release layer of the support having a release layer include one or more release agents selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins. Commercially available products may be used as the support having a release layer, such as "SK-1," "AL-5," and "AL-7" manufactured by Lintec Corporation, "Lumirror T60" manufactured by Toray Industries, Inc., "Purex" manufactured by Teijin Limited, and "Uni-Peel" manufactured by Unitika Limited, which are PET films having a release layer primarily composed of an alkyd resin-based release agent.

[0237] The thickness of the support is not particularly limited, but is preferably in the range of 5 μm to 75 μm, more preferably 10 μm to 60 μm. When a support with a release layer is used, it is preferable that the thickness of the entire support with a release layer is in the above range.

[0238] When a metal foil is used as the support, a metal foil with a support substrate may be used, which is a thin metal foil with a peelable support substrate attached thereto. In one embodiment, the metal foil with a support substrate includes a support substrate, a release layer provided on the support substrate, and a metal foil provided on the release layer. When a metal foil with a support substrate is used as the support, the resin composition layer is provided on the metal foil.

[0239] In the metal foil with a supporting substrate, the material of the supporting substrate is not particularly limited, but examples thereof include copper foil, aluminum foil, stainless steel foil, titanium foil, copper alloy foil, etc. When copper foil is used as the supporting substrate, it may be electrolytic copper foil or rolled copper foil. Furthermore, the release layer is not particularly limited as long as it allows the metal foil to be released from the supporting substrate, and examples thereof include an alloy layer of an element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, and P; an organic coating, etc.

[0240] In the metal foil with a supporting substrate, the material of the metal foil is preferably, for example, copper foil or copper alloy foil.

[0241] In the metal foil with a supporting substrate, the thickness of the supporting substrate is not particularly limited, but is preferably in the range of 10 μm to 150 μm, more preferably in the range of 10 μm to 100 μm. The thickness of the metal foil may be, for example, in the range of 0.1 μm to 10 μm.

[0242] In one embodiment, the resin sheet may further include an optional layer, if necessary. Examples of such optional layers include a protective film provided on the surface of the resin composition layer that is not bonded to the support (i.e., the surface opposite the support). The thickness of the protective film is not particularly limited, but is, for example, 1 μm to 40 μm. By laminating the protective film, adhesion of dust and the like to the surface of the resin composition layer and scratches can be suppressed.

[0243] The resin sheet can be produced, for example, by preparing a liquid resin composition as is or a resin varnish by dissolving the resin composition in an organic solvent, applying this onto a support using a die coater or the like, and then drying to form a resin composition layer.

[0244] The organic solvent may be the same as the organic solvent described as a component of the resin composition. The organic solvent may be used alone or in combination of two or more.

[0245] Drying may be carried out by known methods such as heating or hot air blowing. Drying conditions are not particularly limited, but drying is carried out so that the content of organic solvent in the resin composition layer becomes 10% by mass or less, preferably 5% by mass or less. Although this varies depending on the boiling point of the organic solvent in the resin composition or resin varnish, for example, when a resin composition or resin varnish containing 30% by mass to 60% by mass of organic solvent is used, the resin composition layer can be formed by drying at 50°C to 150°C for 3 to 10 minutes.

[0246] The resin sheet can be stored in a rolled state. When the resin sheet has a protective film, it can be used by peeling off the protective film.

[0247] In one embodiment, the prepreg is formed by impregnating a sheet-like fiber substrate with the resin composition of the present invention.

[0248] The sheet-like fiber substrate used for the prepreg is not particularly limited, and commonly used prepreg substrates such as glass cloth, aramid nonwoven fabric, and liquid crystal polymer nonwoven fabric can be used. From the viewpoint of thinning printed wiring boards and semiconductor chip packages, the thickness of the sheet-like fiber substrate is preferably 50 μm or less, more preferably 40 μm or less, even more preferably 30 μm or less, and particularly preferably 20 μm or less. There is no particular lower limit to the thickness of the sheet-like fiber substrate. It is usually 10 μm or more.

[0249] The prepreg can be produced by a known method such as a hot melt method or a solvent method.

[0250] The thickness of the prepreg may be in the same range as that of the resin composition layer in the resin sheet described above.

[0251] The sheet-like laminate material of the present invention can be suitably used to form an encapsulating layer on a semiconductor chip in a semiconductor chip package (for semiconductor encapsulation). The sheet-like laminate material of the present invention can also be suitably used to form an insulating layer on a printed wiring board (for insulating layers on printed wiring boards), and more suitably used to form an interlayer insulating layer on a printed wiring board (for interlayer insulating layers on printed wiring boards). The sheet-like laminate material of the present invention can also be suitably used to form an insulating layer on a rewiring board in a semiconductor chip package (for insulating layers on rewiring boards). That is, the sheet-like laminate material of the present invention can also be suitably used as an insulating layer on a circuit board.

[0252] [Semiconductor chip package] The semiconductor chip package of the present invention comprises a cured product of the resin composition of the present invention.

[0253] In one embodiment, the semiconductor chip package of the present invention includes a package substrate, a semiconductor chip mounted on the substrate, and a cured product of the resin composition of the present invention that encapsulates at least a portion of the semiconductor chip. Hereinafter, this embodiment will also be referred to as "Embodiment A."

[0254] In embodiment A, the package substrate may be a conventionally known substrate used for forming a semiconductor chip package, and may be manufactured in the same manner as the printed wiring board described below, for example.

[0255] The bonding conditions for the package substrate and the semiconductor chip can be any conditions that allow conductive connection between the terminal electrodes of the semiconductor chip and the circuit wiring of the substrate, such as the conditions used in flip-chip mounting of semiconductor chips.

[0256] An example of a bonding method is a method in which a semiconductor chip is pressure-bonded to a substrate. Pressure-bonding conditions include a pressure-bonding temperature typically in the range of 120°C to 240°C (preferably in the range of 130°C to 200°C, and more preferably in the range of 140°C to 180°C), and a pressure-bonding time typically in the range of 1 second to 60 seconds (preferably in the range of 5 seconds to 30 seconds). Another example of a bonding method is a method in which a semiconductor chip is placed on a substrate and bonded by reflow. Reflow conditions may be in the range of 120°C to 300°C.

[0257] After bonding the semiconductor chip to the substrate, the gap between the semiconductor chip and the substrate may be filled with an underfill material. The resin composition of the present invention can also be used as such an underfill material. In such a case, the semiconductor chip package of the present invention includes an underfill material made of a cured product of the resin composition of the present invention.

[0258] The semiconductor chip can be encapsulated by the same method as in step (3) of embodiment B described below. As described above, the resin composition of the present invention is useful as an encapsulant for such semiconductor chips. In such a case, the semiconductor chip package of the present invention includes an encapsulating layer made of a cured product of the resin composition of the present invention.

[0259] The resin composition of the present invention may be used as a mold underfill material to simultaneously fill the gap between the semiconductor chip and the substrate and seal the semiconductor chip.

[0260] When a semiconductor chip package is produced using the resin composition of the present invention, the resin composition of the present invention may be used as a liquid resin composition or in the form of a sheet-like laminate material as described above.

[0261] In another embodiment (hereinafter also referred to as "embodiment B"), the semiconductor chip package of the present invention can be produced, for example, using the resin composition of the present invention by a method including the following steps (1) to (6). The resin composition of the present invention can be used to form the encapsulating layer in step (3) or the rewiring formation layer in step (5). An example of forming the encapsulating layer or rewiring formation layer using the resin composition will be shown below, but techniques for forming the encapsulating layer or rewiring formation layer of a semiconductor chip package are known, and a person skilled in the art can produce a semiconductor chip package using the resin composition of the present invention according to known techniques. (1) a step of laminating a temporary fixing film on a substrate; (2) a step of temporarily fixing a semiconductor chip on a temporary fixing film; (3) forming an encapsulation layer on the semiconductor chip; (4) peeling the substrate and the temporary fixing film from the semiconductor chip; (5) forming a rewiring formation layer as an insulating layer on the surface of the semiconductor chip from which the base material and the temporary fixing film have been peeled off; and (6) A step of forming a rewiring layer as a conductor layer on the rewiring formation layer.

[0262] -Process (1)- The material used for the substrate is not particularly limited. Examples of the substrate include a silicon wafer, a glass wafer, a glass substrate, a metal substrate such as copper, titanium, stainless steel, or cold-rolled steel sheet (SPCC), a substrate made of glass fiber impregnated with epoxy resin or the like and subjected to a thermosetting treatment (e.g., an FR-4 substrate), and a substrate made of bismaleimide triazine resin (BT resin).

[0263] The material of the temporary fixing film is not particularly limited as long as it can be peeled off from the semiconductor chip in step (4) and can temporarily fix the semiconductor chip. Commercially available products can be used as the temporary fixing film. Examples of commercially available products include Riva Alpha manufactured by Nitto Denko Corporation.

[0264] -Process (2)- The semiconductor chip is temporarily fixed on the temporary fixing film so that its electrode pad surface is bonded to the temporary fixing film. The temporary fixing of the semiconductor chip can be performed using a known device such as a flip chip bonder or a die bonder. The layout and number of semiconductor chips to be arranged can be appropriately set depending on the shape and size of the temporary fixing film, the number of semiconductor packages to be produced, etc., and for example, the semiconductor chips can be temporarily fixed by arranging them in a matrix of multiple rows and multiple columns.

[0265] -Process (3)- The resin composition of the present invention may be applied as a liquid composition onto a semiconductor chip and cured (for example, by heat curing) to form an encapsulating layer. Alternatively, the resin composition of the present invention may be laminated on a semiconductor chip in the form of the above-mentioned resin sheet and cured (for example, by heat curing) to form an encapsulating layer.

[0266] When used in the form of a resin sheet, the semiconductor chip and the resin sheet can be laminated by removing the protective film from the resin sheet and then heat-pressing the resin sheet to the semiconductor chip from the support side. The semiconductor chip and the resin sheet can be laminated by a vacuum lamination method, and the lamination conditions are the same as those described later in relation to the method for producing a printed wiring board, and the preferred ranges are also the same.

[0267] After lamination, the resin composition is thermally cured to form the sealing layer under the same conditions as those described below in connection with the method for producing a printed wiring board.

[0268] The support of the resin sheet may be peeled off after the resin sheet is laminated on the semiconductor chip and thermally cured, or the support may be peeled off before the resin sheet is laminated on the semiconductor chip.

[0269] When the resin composition of the present invention is applied as a liquid composition to form a sealing layer, the application conditions may be the same as those for forming the resin composition layer described in relation to the resin sheet of the present invention. By using the resin composition of the present invention, good fluidity can be achieved at application and molding temperatures.

[0270] -Process (4)- The method for peeling off the substrate and the temporary fixing film can be changed as appropriate depending on the material of the temporary fixing film, etc., and examples include a method in which the temporary fixing film is heated and foamed (or expanded) to peel it off, and a method in which ultraviolet light is irradiated from the substrate side to reduce the adhesive strength of the temporary fixing film and peel it off.

[0271] In the method of heating and foaming (or expanding) the temporary fixing film to peel it off, the heating conditions are usually 100 to 250°C for 1 to 90 seconds or 5 to 15 minutes. In the method of irradiating ultraviolet light from the substrate side to reduce the adhesive strength of the temporary fixing film to peel it off, the irradiation dose of ultraviolet light is usually 10 mJ / cm. 2 ~1000mJ / cm 2 is.

[0272] -Process (5)- The material for forming the rewiring formation layer (insulating layer) is not particularly limited as long as it has insulating properties when the rewiring formation layer (insulating layer) is formed, and from the viewpoint of ease of manufacturing a semiconductor chip package, a photosensitive resin or a thermosetting resin is preferred. The resin composition of the present invention can also be suitably used for forming the rewiring formation layer.

[0273] After forming the redistribution layer, via holes may be formed in the redistribution layer to connect the semiconductor chip to a conductor layer (described later). The via holes may be formed by a known method depending on the material of the redistribution layer.

[0274] -Process (6)- The material of the conductor layer formed on the redistribution layer is not particularly limited. In a preferred embodiment, the conductor layer contains one or more metals selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. The conductor layer may be a single metal layer or an alloy layer. Examples of alloy layers include layers formed from alloys of two or more metals selected from the above group (e.g., nickel-chromium alloys, copper-nickel alloys, and copper-titanium alloys). Among these, from the viewpoints of versatility, cost, ease of patterning, etc., in the formation of the conductor layer, a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper, or an alloy layer of a nickel-chromium alloy, copper-nickel alloy, or copper-titanium alloy is preferred. A single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper, or an alloy layer of a nickel-chromium alloy, is more preferred, and a single metal layer of copper is even more preferred.

[0275] The conductor layer may have a single layer structure or a multi-layer structure in which two or more single metal layers or alloy layers made of different types of metals or alloys are laminated. When the conductor layer has a multi-layer structure, the layer in contact with the insulating layer is preferably a single metal layer of chromium, zinc, or titanium, or an alloy layer of a nickel-chromium alloy.

[0276] The thickness of the conductor layer depends on the desired design of the semiconductor chip package, but is generally 1 μm to 35 μm, preferably 1 μm to 20 μm.

[0277] In one embodiment, the conductor layer may be formed by plating. For example, a conductor layer having a desired wiring pattern can be formed by plating the surface of the rewiring formation layer using a conventionally known technique such as a semi-additive method or a full-additive method. From the viewpoint of ease of production, it is preferable to form the conductor layer by a semi-additive method. An example of forming the conductor layer by a semi-additive method will be described below.

[0278] First, a plating seed layer is formed on the surface of the rewiring formation layer by electroless plating. Next, a mask pattern is formed on the formed plating seed layer, exposing a portion of the plating seed layer corresponding to the desired wiring pattern. After a metal layer is formed on the exposed plating seed layer by electrolytic plating, the mask pattern is removed. Thereafter, unnecessary plating seed layer is removed by etching or the like, thereby forming a conductor layer (rewiring layer) having the desired wiring pattern.

[0279] The steps (5) and (6) may be repeated to alternately stack (build up) conductive layers (rewiring layers) and rewiring formation layers (insulating layers).

[0280] The manufacturing of the semiconductor chip package may further include the steps of (7) forming a solder resist layer on the conductor layer (rewiring layer), (8) forming bumps, and (9) dicing the plurality of semiconductor chip packages into individual semiconductor chip packages. These steps may be performed according to various methods known to those skilled in the art for use in manufacturing semiconductor chip packages.

[0281] The above-mentioned embodiment B is a method of forming a semiconductor chip first and then forming a rewiring layer on the electrode pad surface, i.e., a chip 1st (Chip-1 st In addition to the chip 1st process, the semiconductor chip package of the present invention can also be manufactured by a process in which a rewiring layer is first provided, and then a semiconductor chip is provided on the rewiring layer in a state in which the electrode pad surface can be electrically connected to the rewiring layer, and then the semiconductor chip is sealed. This is called the rewiring layer 1st (RDL-1) process. stThe resin composition of the present invention may be produced by the Chip-1 method. st Construction method and RDL-1 st Regardless of the construction method, it is possible to realize a semiconductor chip package with extremely low transmission loss, which is required for next-generation high-speed communication applications.

[0282] By forming an encapsulating layer, a rewiring formation layer, etc. using the resin composition of the present invention, which can suppress warpage, exhibits good dielectric properties, and provides a cured product that maintains good mechanical strength even when exposed to a high-temperature, high-humidity environment, a semiconductor chip package with extremely low transmission loss can be realized, regardless of whether the semiconductor package is a fan-in package or a fan-out package. In one embodiment, the semiconductor chip package of the present invention is a fan-out package. The resin composition of the present invention can be applied to both a fan-out panel level package (FOPLP) and a fan-out wafer level package (FOWLP). In one embodiment, the semiconductor package of the present invention is a fan-out panel level package (FOPLP). In another embodiment, the semiconductor package of the present invention is a fan-out wafer level package (FOWLP).

[0283] [Printed wiring board] A printed wiring board can be produced using the resin composition of the present invention. The present invention also provides such a printed wiring board. The printed wiring board of the present invention is characterized by including an insulating layer made of a cured product of the resin composition of the present invention.

[0284] The printed wiring board can be produced, for example, by using the above-mentioned resin sheet by a method including the following steps (I) and (II). (I) A step of laminating a resin sheet on an inner layer substrate so that the resin composition layer of the resin sheet is bonded to the inner layer substrate. (II) A step of curing (e.g., thermally curing) the resin composition layer to form an insulating layer.

[0285] The "inner layer substrate" used in step (I) is a member that will become the substrate of a printed wiring board, and examples thereof include glass epoxy substrates, metal substrates, polyester substrates, polyimide substrates, BT resin substrates, and thermosetting polyphenylene ether substrates. The substrate may have a conductor layer on one or both sides, and this conductor layer may be patterned. An inner layer substrate having a conductor layer (circuit) formed on one or both sides of the substrate may be referred to as an "inner layer circuit board." Furthermore, the "inner layer substrate" of the present invention also includes intermediate products on which an insulating layer and / or a conductor layer is to be further formed during the production of a printed wiring board. When the printed wiring board is a circuit board with built-in components, an inner layer substrate with built-in components may be used.

[0286] The inner layer substrate and the resin sheet can be laminated, for example, by thermocompression bonding the resin sheet to the inner layer substrate from the support side. Examples of a member for thermocompression bonding the resin sheet to the inner layer substrate (hereinafter also referred to as a "thermocompression bonding member") include a heated metal plate (such as a SUS end plate) or a metal roll (SUS roll). The thermocompression bonding member may be pressed directly onto the resin sheet, or may be pressed via an elastic material such as heat-resistant rubber so that the resin sheet can sufficiently conform to the surface irregularities of the inner layer substrate.

[0287] The lamination of the inner layer substrate and the resin sheet may be carried out by a vacuum lamination method. In the vacuum lamination method, the thermocompression temperature is preferably in the range of 60°C to 160°C, more preferably 80°C to 140°C, the thermocompression pressure is preferably in the range of 0.098MPa to 1.77MPa, more preferably 0.29MPa to 1.47MPa, and the thermocompression time is preferably in the range of 20 seconds to 400 seconds, more preferably 30 seconds to 300 seconds. The lamination may be carried out under reduced pressure conditions, preferably at a pressure of 26.7hPa or less.

[0288] The lamination can be performed using a commercially available vacuum laminator, such as a vacuum pressure laminator manufactured by Meiki Seisakusho Co., Ltd., a vacuum applicator manufactured by Nikko Materials Co., Ltd., or a batch vacuum pressure laminator.

[0289] After lamination, the laminated resin sheets may be smoothed under normal pressure (atmospheric pressure), for example, by pressing a thermocompression member from the support side. The pressing conditions for the smoothing treatment may be the same as the thermocompression conditions for lamination. The smoothing treatment may be performed using a commercially available laminator. Note that lamination and smoothing treatment may be performed consecutively using the commercially available vacuum laminator.

[0290] The support may be removed between step (I) and step (II), or after step (II). When a metal foil is used as the support, the conductor layer may be formed using the metal foil without peeling off the support. When a metal foil with a supporting substrate is used as the support, the supporting substrate (and the release layer) may be peeled off. Then, the conductor layer can be formed using the metal foil.

[0291] In step (II), the resin composition layer is cured (for example, by heat curing) to form an insulating layer made of a cured product of the resin composition. The curing conditions for the resin composition layer are not particularly limited, and conditions typically employed for forming insulating layers for printed wiring boards may be used.

[0292] For example, the thermal curing conditions for the resin composition layer vary depending on the type of resin composition, but in one embodiment, the curing temperature is preferably 120° C. to 250° C., more preferably 150° C. to 240° C., and even more preferably 180° C. to 230° C. The curing time is preferably 5 minutes to 240 minutes, more preferably 10 minutes to 150 minutes, and even more preferably 15 minutes to 120 minutes.

[0293] Before thermally curing the resin composition layer, the resin composition layer may be preheated at a temperature lower than the curing temperature. For example, prior to thermally curing the resin composition layer, the resin composition layer may be preheated at a temperature of 50°C to 120°C, preferably 60°C to 115°C, more preferably 70°C to 110°C for 5 minutes or more, preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes, and even more preferably 15 minutes to 100 minutes.

[0294] When manufacturing a printed wiring board, the following steps may be further performed: (III) drilling holes in the insulating layer, (IV) roughening the insulating layer, and (V) forming a conductor layer. These steps (III) to (V) may be performed according to various methods known to those skilled in the art and used in manufacturing printed wiring boards. When the support is removed after step (II), the removal of the support may be performed between steps (II) and (III), between steps (III) and (IV), or between steps (IV) and (V). Furthermore, if necessary, the formation of the insulating layer and the conductor layer in steps (I) to (V) may be repeated to form a multilayer wiring board.

[0295] In another embodiment, a printed wiring board can be manufactured using the above-mentioned prepreg. The manufacturing method is basically the same as when a resin sheet is used.

[0296] Step (III) is a step of drilling holes in the insulating layer, thereby forming holes such as via holes and through holes in the insulating layer. Step (III) may be performed using, for example, a drill, a laser, plasma, or the like, depending on the composition of the resin composition used to form the insulating layer. The dimensions and shape of the holes may be determined appropriately depending on the design of the printed wiring board.

[0297] Step (IV) is a step of roughening the insulating layer. Usually, in this step (IV), smear removal (desmear) is also performed. The procedure and conditions of the roughening treatment are not particularly limited, and known procedures and conditions commonly used in forming insulating layers for printed wiring boards can be adopted. For example, the insulating layer can be roughened by performing a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a neutralization treatment with a neutralizing liquid in this order.

[0298] The swelling liquid used in the roughening treatment is not particularly limited, but examples thereof include alkaline solutions and surfactant solutions, and is preferably an alkaline solution, with sodium hydroxide solution and potassium hydroxide solution being more preferred. Commercially available swelling liquids include "Swelling Dip Securigance P" and "Swelling Dip Securigance SBU" manufactured by Atotech Japan. The swelling treatment using a swelling liquid is not particularly limited, but can be carried out by, for example, immersing the insulating layer in a swelling liquid at 30°C to 90°C for 1 to 20 minutes. To keep the swelling of the resin in the insulating layer to an appropriate level, it is preferable to immerse the insulating layer in a swelling liquid at 40°C to 80°C for 5 to 15 minutes.

[0299] The oxidizing agent used in the roughening treatment is not particularly limited, but examples thereof include alkaline permanganate solutions prepared by dissolving potassium permanganate or sodium permanganate in an aqueous solution of sodium hydroxide. Roughening treatment using an oxidizing agent such as alkaline permanganate solution is preferably carried out by immersing the insulating layer in an oxidizing agent solution heated to 60°C to 100°C for 10 to 30 minutes. The concentration of permanganate in the alkaline permanganate solution is preferably 5% by mass to 10% by mass. Commercially available oxidizing agents include alkaline permanganate solutions such as "Concentrate Compact CP" and "Dosing Solution Securigance P" manufactured by Atotech Japan.

[0300] The neutralizing solution used in the roughening treatment is preferably an acidic aqueous solution, and examples of commercially available products include "Reduction Solution Securigant P" manufactured by Atotech Japan.

[0301] Treatment with a neutralizing solution can be carried out by immersing the surface that has been roughened with an oxidizing agent in a neutralizing solution at 30° C. to 80° C. for 5 to 30 minutes. From the standpoint of workability, etc., a method in which the object that has been roughened with an oxidizing agent is immersed in a neutralizing solution at 40° C. to 70° C. for 5 to 20 minutes is preferred.

[0302] Step (V) is a step of forming a conductor layer on an insulating layer, and may be performed in the same manner as step (6) described in relation to the method for manufacturing a semiconductor chip package.

[0303] The thickness of the conductor layer depends on the desired design of the printed wiring board, but is generally 3 μm to 35 μm, preferably 5 μm to 30 μm.

[0304] The conductor layer may also be formed using a metal foil. When a metal foil is used to form the conductor layer, it is preferable to perform step (V) between steps (I) and (II). For example, after step (I), the support is removed and a metal foil is laminated on the exposed surface of the resin composition layer. The lamination of the resin composition layer and the metal foil may be performed by a vacuum lamination method. The lamination conditions may be the same as those described for step (I). Next, step (II) is performed to form an insulating layer. Thereafter, a conductor layer having a desired wiring pattern can be formed using the metal foil on the insulating layer by a conventionally known technique such as a subtractive method or a modified semi-additive method.

[0305] The metal foil can be produced by a known method such as an electrolytic method, a rolling method, etc. Examples of commercially available metal foils include HLP foil and JXUT-III foil manufactured by JX Nippon Mining & Metals Corporation, and 3EC-III foil and TP-III foil manufactured by Mitsui Mining & Smelting Co., Ltd.

[0306] Alternatively, when a metal foil or a metal foil with a supporting substrate is used as the support for the resin sheet, the conductor layer may be formed using the metal foil, as described above.

[0307] [Semiconductor Devices] The semiconductor device of the present invention includes a layer made of a cured product of the resin composition of the present invention. The semiconductor device of the present invention can be produced using the semiconductor chip package or printed wiring board of the present invention.

[0308] Examples of semiconductor devices include various semiconductor devices used in electrical appliances (for example, computers, mobile phones, digital cameras, and televisions) and vehicles (for example, motorcycles, automobiles, trains, ships, and aircraft). [Example]

[0309] The present invention will be described in more detail below with reference to examples. The present invention is not limited to these examples. In the following, "parts" representing amounts mean "parts by mass" unless otherwise specified.

[0310] <Synthesis Example 1: Synthesis of Resin X1> A reaction vessel was charged with 112 g of bifunctional hydroxyl-terminated polybutadiene ("G-3000" manufactured by Nippon Soda Co., Ltd., number average molecular weight = 3000, hydroxyl group equivalent = 1800 g / eq.), 272 g of anisole as a solvent, and 14 g of isophorone diisocyanate (IPDI), and the temperature was raised to 50°C, and the reaction was carried out for approximately 1 hour. Next, 145 g of an oligophenylene ether resin containing phenolic hydroxyl groups at both ends ("SA90-100" manufactured by Sabic, hydroxy group equivalent weight = 800 g / eq.) and 1 g of benzophenonetetracarboxylic dianhydride (BTDA) were added to the reaction mixture, and the mixture was heated to 140°C with stirring and reacted for approximately 4 hours. The disappearance of the NCO peak at 2250 cm-1 was confirmed by FT-IR. The disappearance of the NCO peak marked the end of the reaction, and the reaction mixture was cooled to room temperature. The reaction mixture was then filtered through a 100-mesh filter cloth to obtain Resin X1 having an oligophenylene ether skeleton (50% nonvolatile content, 6.0 Pa·s viscosity at 25°C, weight-average molecular weight 280,000, glass transition temperature 0°C).

[0311] <Synthesis Example 2: Synthesis of Resin X2> A reaction vessel was charged with 60 g of bifunctional hydroxyl-terminated polybutadiene ("G-1000" manufactured by Nippon Soda Co., Ltd., number average molecular weight = 1400, hydroxyl group equivalent = 800 g / eq.), 220 g of anisole as a solvent, and 14 g of isophorone diisocyanate (IPDI), and the temperature was raised to 50°C, and the reaction was carried out for approximately 1 hour. Next, 145 g of oligophenylene ether resin containing phenolic hydroxyl groups at both ends ("SA90-100" manufactured by Sabic, hydroxy group equivalent = 800 g / eq.) and 1 g of benzophenonetetracarboxylic dianhydride (BTDA) were added to the reaction mixture, and the mixture was heated to 140°C with stirring and reacted for about 4 hours. -1 The disappearance of the NCO peak was confirmed. The disappearance of the NCO peak was considered to be the end of the reaction, and the reaction mixture was cooled to room temperature. The reaction mixture was then filtered through a 100-mesh filter cloth to obtain Resin X2 having an oligophenylene ether skeleton (non-volatile components 50% by mass, viscosity at 25°C 2.0 Pa s, weight-average molecular weight 260,000, glass transition temperature 0°C).

[0312] <Synthesis Example 3: Synthesis of Resin X3> 83 g of polycarbonate diol ("C-2015N" manufactured by Kuraray Co., Ltd., number average molecular weight = 2000, hydroxy group equivalent = 1000 g / eq.), 240 g of anisole as a solvent, and 14 g of isophorone diisocyanate (IPDI) were placed in a reaction vessel, heated to 50°C, and reacted for about 1 hour. Next, 145 g of oligophenylene ether resin containing phenolic hydroxyl groups at both ends ("SA90-100" manufactured by Sabic, hydroxy group equivalent = 800 g / eq.) and 1 g of benzophenonetetracarboxylic dianhydride (BTDA) were added to the reaction mixture, and the mixture was heated to 140°C with stirring and reacted for about 4 hours. -1 The disappearance of the NCO peak was confirmed. The disappearance of the NCO peak was considered to be the end of the reaction, and the reaction mixture was cooled to room temperature. The reaction mixture was then filtered through a 100-mesh filter cloth to obtain Resin X3 having an oligophenylene ether skeleton (non-volatile components 50% by mass, viscosity at 25°C 4.0 Pa s, weight-average molecular weight 254,000, glass transition temperature -4°C).

[0313] <Synthesis Example 4: Synthesis of Resin X'1> A reaction vessel was charged with 69 g of bifunctional hydroxy-terminated polybutadiene ("G-3000" manufactured by Nippon Soda Co., Ltd., number average molecular weight = 3000, hydroxy group equivalent weight = 1800 g / eq.), 40 g of an aromatic hydrocarbon mixed solvent ("IPZOL 150" manufactured by Idemitsu Petrochemical Co., Ltd.), and 0.005 g of dibutyltin laurate, which were mixed and dissolved uniformly. Once homogeneous, the mixture was heated to 60°C, and 8 g of isophorone diisocyanate ("IPDI" manufactured by Evonik Degussa Japan Co., Ltd., isocyanate group equivalent weight = 113 g / eq.) was added with further stirring, followed by a reaction for approximately 3 hours. Next, 23 g of cresol novolak resin (DIC Corporation "KA-1160", hydroxyl group equivalent = 117 g / eq.) and 60 g of ethyl diglycol acetate (Daicel Corporation) were added to the reaction mixture, and the mixture was heated to 150 °C with stirring and reacted for about 10 hours. -1 The disappearance of the NCO peak was confirmed. The disappearance of the NCO peak was considered to be the end point of the reaction, and the reaction product was cooled to room temperature. The reaction product was then filtered through a 100-mesh filter cloth to obtain Resin X'1 (phenolic hydroxyl group-containing butadiene resin: non-volatile component 50% by mass, glass transition temperature -4°C).

[0314] <Synthesis Example 5: Synthesis of Maleimide A> An MEK solution (70% by mass of non-volatile components) of maleimide A (n = 1.47, Mw / Mn = 1.81) represented by the following formula, synthesized by the method described in Synthesis Example 1 of the Japan Institute of Invention and Innovation's Technical Journal Disclosure No. 2020-500211, was obtained. This was blended into the resin composition of Example 9 described below.

[0315] [ka]

[0316] [Examples 1 to 12, Comparative Examples 1 to 3] (1) Preparation of resin composition Each component was weighed according to the formulation shown in Table 1, and then 15 parts of MEK was added and mixed, followed by uniform dispersion using a high-speed rotating mixer to obtain a resin composition (resin varnish).

[0317] (2) Manufacturing of resin sheets A polyethylene terephthalate film ("AL5" manufactured by Lintec Corporation, thickness 38 μm) with a release layer was prepared as a support. The obtained resin varnish was uniformly applied onto the release layer of this support so that the thickness of the resin composition layer after drying would be 50 μm. Thereafter, the resin composition was dried at 80°C to 120°C (average 100°C) for 4 minutes to obtain a resin sheet having a layer structure of resin composition layer / support.

[0318] <Measurement of stud-pull strength> 1.Lamination of resin sheets The resin sheets prepared in the Examples and Comparative Examples were laminated onto one side of a 12-inch silicon wafer (775 μm thick) using a batch-type vacuum pressure laminator (Nikko Materials Co., Ltd., two-stage build-up laminator "CVP700"). This lamination was carried out by reducing the pressure to 3 hPa or less for 30 seconds, followed by pressure bonding at 100°C and 0.74 MPa for 30 seconds. After peeling off the AL5, the wafer was placed in an oven at 200°C and heated for 90 minutes to cure the resin composition layer. In this way, "Evaluation Wafer A," consisting of a 12-inch silicon wafer with a cured resin composition layer, was obtained. Evaluation Wafer A was prepared for each resin composition.

[0319] 2. Stud pull test (1) Test conditions Using a stud pull tester (ROMULUS, manufactured by Quad Group Inc.), the load value (kgf / cm) at peeling was measured using the following procedure. 2 ) was evaluated. That is, an aluminum stud pin with an epoxy adhesive (2.7 mm diameter of the adhesive surface; P / N 901106) was placed on the cured layer of the resin composition of evaluation wafer A, with a backing plate fixed to the opposite side. The stud pin was then heated in an oven at 150°C for 1 hour to adhere to the cured layer. Then, using the stud pull tester described above, the stud pin was pulled in the vertical direction to the main surface of the evaluation wafer at a rate of 2 kgf / sec, and the load value (kgf / cm) at which the cured layer peeled off was recorded. 2) was measured. The test was carried out on all evaluation wafers A prepared for each resin composition (N=5).

[0320] <Warp evaluation> The resin sheets prepared in the Examples and Comparative Examples were laminated onto a 12-inch silicon wafer (775 μm thick) using a batch-type vacuum pressure laminator (Nikko Materials Co., Ltd., two-stage build-up laminator "CVP700") over the entire surface of one side of the silicon wafer so that the resin composition layer was bonded to the silicon wafer. The support was peeled off, and another resin sheet was similarly laminated on the surface of the exposed resin composition layer, and the support was peeled off. This resulted in two resin composition layers (total thickness 100 μm) being formed on one side of the 12-inch silicon wafer. The lamination (lamination and smoothing) was performed under the same conditions as in 1 above. The obtained laminate was heated in an oven at 200°C for 90 minutes to cure the resin composition layer and form an insulating layer, thereby obtaining an evaluation wafer B including a silicon wafer and a cured product of the resin composition layer. The amount of warpage of the obtained evaluation wafer B was measured using a shadow moiré measurement device ("Thermoire AXP" manufactured by Akorometrix). The measurement was performed in accordance with the JEITA standard EDX-7311-24. Specifically, a virtual plane obtained using the least squares method for all data on the evaluation substrate surface in the measurement area was used as the reference plane, and the difference between the minimum and maximum values ​​in the vertical direction from the reference plane was calculated as the amount of warpage. The obtained measurements were evaluated according to the following criteria. ○: Warpage is 0 μm or more and less than 1000 μm △: Warpage is between 1000um and 1500um ×: Warpage is 1500 μm or more

[0321] <Measurement of dielectric loss tangent> The resin sheets obtained in the examples and comparative examples were heated at 200°C for 90 minutes to thermally cure the resin composition layers. The support was then peeled off to obtain a cured resin composition layer. The cured resin was cut into a piece 2 mm wide and 80 mm long to prepare a test piece for evaluation. For each evaluation test piece, the dielectric loss tangent (Df value) was measured by the cavity resonance perturbation method using an Agilent Technologies HP8362B at a measurement frequency of 5.8 GHz and a measurement temperature of 23°C. Measurements were performed on three test pieces, and the average value was calculated. The obtained average value was evaluated according to the following criteria. ×: Dielectric tangent is 0.004 or more △: Dielectric tangent is over 0.0035 and less than 0.004 ○: Dielectric tangent is 0.0035 or less

[0322] <Evaluation of breaking strength> The resin sheets obtained in the examples and comparative examples were heated at 200° C. for 90 minutes to thermally cure the resin composition layers. Then, the support was peeled off to obtain cured resin composition layers. Of these cured products, one was left in a HAST environment (130°C, 85% RH) for 100 hours, and the other was not. Tensile tests were conducted in accordance with Japanese Industrial Standards (JIS K7127) using a Tensilon universal testing machine ("RTC-1250A" manufactured by Orientec Co., Ltd.) to measure the strength at break (%) at 23°C. The rate of decrease in strength at break before and after HAST was evaluated according to the following criteria. ×: Decrease rate is over 10% △: Decrease rate is over 7% and 10% or less ○: Decrease rate is 7% or less

[0323] The results of Examples 1 to 12 and Comparative Examples 1 to 3 are shown in Table 1.

[0324] [Table 1]

[0325] The details of each component listed in Table 1 are as follows: <Thermosetting resin> 828EL: Bisphenol A epoxy resin, functional group equivalent weight approximately 180g / eq, manufactured by Mitsubishi Chemical Corporation HP-6000L: Naphthylene ether type epoxy resin, functional group equivalent weight approx. 213g / eq, manufactured by DIC Corporation YX4000H: Biphenyl type epoxy resin, functional group equivalent weight 190g / eq, manufactured by Mitsubishi Chemical Corporation <Curing agent> KA-1160: Phenolic curing agent, cresol novolac resin, functional group equivalent weight 117g / eq, manufactured by DIC Corporation HPC-8000-65T: Active ester curing agent, functional group equivalent weight 223g / eq, non-volatile content 65% by mass in toluene solution, manufactured by DIC Corporation V-03: Carbodiimide curing agent, functional group equivalent weight 216g / eq, non-volatile content 50% by mass in toluene solution, manufactured by Nisshinbo Chemical Inc. <Resin X> Resins X1 to X3: Resins X1 to X3 synthesized in Synthesis Examples 1 to 3, anisole solution with a non-volatile content of 50% by mass <Resin X'> Resin X'1: Resin X'1 synthesized in Synthesis Example 4, solution with 50% nonvolatile content YX7553BH30: Phenoxy resin, 30% non-volatile MEK solution and 1:1 mixture of cyclohexanone, manufactured by Mitsubishi Chemical Corporation <Curing accelerator> 1B2PZ: Imidazole derivative, manufactured by Shikoku Chemicals Corporation DMAP: 4-dimethylaminopyridine <Maleimide resin> BMI-689: Maleimide compound, manufactured by Desiigner Molecules MIR-3000-70MT: Biphenylaralkylnovolac-type maleimide compound, MEK solution with a non-volatile content of 70% and a mixed solution of toluene, manufactured by Nippon Kayaku Co., Ltd. BMI-1500: Maleimide compound, manufactured by Desiigner Molecules <Inorganic filler> SO-C2: Spherical silica surface-treated with an amino-silane coupling agent (Shin-Etsu Chemical Co., Ltd. "KBM573"), average particle size 0.5 μm, specific surface area 5.8 m 2 / g, manufactured by Admatechs Co., Ltd.

Claims

1. Epoxy resin, inorganic fillers, and A resin composition containing an oligophenylene ether skeleton-containing resin X having a glass transition temperature of 25°C or lower, When the resin component in the resin composition is taken as 100% by mass, the content of the epoxy resin is 15% by mass or more and 50% by mass or less, When the resin component in the resin composition is taken as 100% by mass, the content of resin X is 10% by mass or more and 64% by mass or less, When the nonvolatile components in the resin composition are taken as 100% by mass, the content of the inorganic filler is 65% by mass or more and 85% by mass or less; The cured product of the resin composition has a stud-pull adhesion strength of 600 kgf / cm ２ The above is the resin composition.

2. The resin composition according to claim 1, wherein the content of the resin X is 10% by mass or more and less than 60% by mass when the resin component in the resin composition is 100% by mass.

3. 2. The resin composition according to claim 1, wherein Resin X comprises one or more structural units selected from the group consisting of polyolefin structural units, polycarbonate structural units, polyether structural units, polyester structural units, poly(meth)acrylic structural units, and polysiloxane structural units.

4. The resin composition according to claim 1 , wherein Resin X comprises a cyclic imide structure.

5. The resin composition according to claim 1, which is used for semiconductor encapsulation.

6. The resin composition according to claim 1, which is used for an insulating layer of a circuit board.

7. A cured product of the resin composition according to any one of claims 1 to 6.

8. A resin sheet comprising a support and a layer of the resin composition according to any one of claims 1 to 6 provided on the support.

9. The resin sheet according to claim 8 , wherein the support is a thermoplastic resin film or a metal foil.

10. A semiconductor chip package comprising an encapsulating layer made of a cured product of the resin composition according to any one of claims 1 to 6.

11. A circuit board comprising an insulating layer made of a cured product of the resin composition according to any one of claims 1 to 6.

12. A semiconductor device comprising the semiconductor chip package of claim 10.

13. A semiconductor device comprising the circuit board according to claim 11.

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