Indication device

Abstract

To provide a separating method with high mass-productivity at low cost.SOLUTION: A resin layer with a thickness of 0.1 μm or more and 3 μm or less is formed of a material with photosensitivity and thermosetting property on a manufacturing substrate. On the resin layer, a transistor including an oxide semiconductor in a channel formation region is formed. Using a linear laser device, the resin layer is irradiated with light so that the transistor and the manufacturing substrate are separated. In the resin layer, a first region and a second region thinner than the first region, or an opening can be formed. In a case where a conductive layer functioning as an external connection terminal or the like is formed overlapping with the second region or the opening in the resin layer, the conductive layer is exposed by the separation.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a peeling method and a manufacturing method of a flexible device. The present invention relates to a display device, a display module, and an electronic device. The present invention relates to a display device, a display module, and an electronic device having the above.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Transistors, semiconductor circuits, arithmetic units, memory devices, etc. are examples of semiconductor devices. In addition, imaging devices, electro-optical devices, power generation devices (thin film solar cells, organic thin film solar cells, etc.) ), and electronic devices may include semiconductor devices. [Background technology]

[0004] Organic EL (Electro Luminescence) elements and liquid crystal elements are used. In addition, light emitting diodes (LEDs) are known. a light-emitting device equipped with a light-emitting element such as a light-emitting diode, and a display device using an electrophoresis method, etc. Electronic paper is also an example of a display device.

[0005] The basic structure of an organic EL element is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light is emitted from the luminescent organic compound. A display device using such an organic EL element is thin, lightweight, and highly controllable. This makes it possible to realize a display device that is both durable and consumes low power.

[0006] Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0008] Flexible devices, such as flexible displays, are made of flexible substrates ( By forming semiconductor elements such as transistors and other elements on the However, flexible substrates have poor heat resistance compared to glass substrates and the like. Therefore, in the method of forming transistors directly on a flexible substrate, In some cases, the electrical characteristics and reliability of the capacitor cannot be improved.

[0009] Therefore, as described in Patent Document 1, a semiconductor device formed on a glass substrate on which a peeling layer is formed is A method is being considered in which conductive elements, light-emitting elements, etc. are peeled off and then transferred to a flexible substrate. This method allows for the formation temperature of semiconductor elements to be increased, resulting in extremely reliable flexible wiring. It is possible to fabricate a sible device.

[0010] An object of one embodiment of the present invention is to provide a novel peeling method. One of the objects of the present invention is to provide a peeling method that is low cost and highly suitable for mass production. One of the objectives of this method is to perform peeling using a large substrate.

[0011] An object of one embodiment of the present invention is to provide a novel flexible device and a manufacturing method thereof. One embodiment of the present invention is to provide a highly reliable flexible device. One embodiment of the present invention aims to manufacture a flexible device at low temperature. One embodiment of the present invention is a method for fabricating a flexible device by simplifying the fabrication process. One embodiment of the present invention is a method for manufacturing a semiconductor device that is low cost and easy to mass-produce. An object of the present invention is to provide a method for manufacturing a flexible device. One of the objectives of the present invention is to manufacture a flexible device using a large substrate. An object of one embodiment of the present invention is to provide a device having a curved surface. An object of the present invention is to provide a lightweight flexible device. An object of the present invention is to provide a thin flexible device. One of the objects is to provide a flexible device that can be repeatedly bent.

[0012] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0013] (1) One embodiment of the present invention is a method for forming a thick film on a formation substrate using a photosensitive and thermosetting material. A resin layer having a thickness of 0.1 μm to 3 μm is formed on the resin layer, and an oxide film is formed on the resin layer in the channel forming region. A transistor having a semiconductor is formed, and the resin layer is irradiated with light using a linear laser device. This is a peeling method for separating a transistor from a substrate on which the transistor is formed.

[0014] In the above (1), the resin layer has a viscosity of 5 cP or more and less than 100 cP, more preferably 10 It is preferably formed using a solution of at least 50 cP but less than 50 cP.

[0015] In the above (1), the resin layer is preferably formed using a spin coater.

[0016] In the above (1), the resin layer is formed by heating the material at a first temperature. The transistor is preferably formed at a temperature less than or equal to the first temperature.

[0017] In the above (1), a linear laser device is used to irradiate the resin layer with light from the side of the fabrication substrate. It is preferable.

[0018] (2) One embodiment of the present invention is a method for forming a thick film on a formation substrate using a photosensitive and thermosetting material. A first film having a thickness of 0.1 μm or more and 3 μm or less is formed, and the first film is formed by photolithography. A first region and a second region having a thickness thinner than that of the first region are formed in the film, and the first film is a resin layer having a first region and a second region is formed by heating the resin layer at a temperature of 1. a transistor having an oxide semiconductor in a channel formation region on the second insulating film; A conductive layer is formed so as to overlap the region, and light is irradiated onto the resin layer using a linear laser device. This is a peeling method for separating a transistor from a substrate on which the transistor is formed.

[0019] (3) One embodiment of the present invention is a method for forming a thick film on a formation substrate using a photosensitive and thermosetting material. A first film having a thickness of 0.1 μm or more and 3 μm or less is formed, and the first film is formed by photolithography. An opening is formed in the first film, and the first film is heated at a first temperature to form a resin layer having the opening. a transistor having an oxide semiconductor in a channel formation region on the resin layer; A conductive layer is formed so as to overlap the opening in the resin layer, and light is irradiated onto the resin layer using a linear laser device. This is a peeling method in which the transistor is separated from the substrate by irradiation.

[0020] In each of the above (2) and (3), the conductive layer is the same as the electrode of the transistor. It is preferable that they are made of the same material and in the same process.

[0021] In one embodiment of the present invention, a transistor is fabricated by using the peeling method (2) or (3). By separating the substrate, the conductive layer is exposed, and the conductive layer and the circuit board are connected through the opening in the resin layer. , and electrically connect them.

[0022] (4) One aspect of the present invention is a resin layer, a transistor on the resin layer, and an electrically The thickness of the resin layer is 0.1 μm or more and 3 μm or less. The transistor has an oxide semiconductor in the channel formation region. Preferably, the 5% weight loss temperature is less than 400°C.

[0023] One aspect of the present invention is a display module having the display device of (4) above and a circuit board. The display device has a conductive layer. The resin layer has an opening. The conductive layer is connected to a circuit through the opening. It is electrically connected to the substrate.

[0024] (5) One aspect of the present invention is a flexible substrate, a first resin layer on the substrate, and a first resin a first inorganic insulating layer on the insulating layer, a second resin layer on the first inorganic insulating layer, and a second resin layer on the second resin layer. a second inorganic insulating layer, an oxide semiconductor layer on the second inorganic insulating layer, and a first The gate insulating layer, the first gate on the first gate insulating layer, and the oxide semiconductor layer are electrically connected to each other. A source and a drain electrically connected to each other, and a table electrically connected to the source or the drain. The display device has a display element, and the thickness of the first resin layer is 0.1 μm or more and 3 μm or less. The first resin layer preferably has a 5% weight loss temperature of less than 400°C.

[0025] In the above (5), a second gate is provided between the second inorganic insulating layer and the oxide semiconductor layer. It is preferable that a second gate insulating layer is provided between the second gate and the oxide semiconductor layer. It is preferable that

[0026] Alternatively, in the above (5), a second gate electrode is provided between the first inorganic insulating layer and the second resin layer. In this case, the second inorganic insulating layer preferably functions as a second gate insulating layer. Furthermore, a third inorganic insulating layer may be provided on the second gate and the first inorganic insulating layer. It is preferable that:

[0027] (6) One aspect of the present invention is a flexible substrate, a first resin layer on the substrate, and a first resin a second resin layer on the insulating layer, an inorganic insulating layer on the second resin layer, and an oxide semiconductor layer on the inorganic insulating layer. a first gate insulating layer on the oxide semiconductor layer; and a first gate on the first gate insulating layer. a source and a drain electrically connected to the oxide semiconductor layer, and a first resin layer. Between the second resin layer and the second gate, a surface electrically connected to the source or drain is formed. The inorganic insulating layer functions as a second gate insulating layer. The thickness of the first resin layer is 0.1 μm or more and 3 μm or less.

[0028] One aspect of the present invention is a display model having the display device of (5) or (6) above and a circuit board. The display device has a conductive layer. The first resin layer has an opening. The conductive layer has Electrical connection is made to the circuit board through the opening.

[0029] One embodiment of the present invention includes a display device having any of the above structures, and a flexible printed circuit Substrate (Flexible printed circuit, hereinafter referred to as FPC) or is equipped with a connector such as TCP (Tape Carrier Package) Module, or COG (Chip On Glass) or COF (Chi Modules such as modules on which integrated circuits (ICs) are mounted using the "p On Film" method, etc. It is a rule.

[0030] In one embodiment of the present invention, the above structure is not a display device, but a light-emitting device or an input / output device (touch panel). This may be applied to a variety of devices, such as a chip panel.

[0031] One aspect of the present invention is a module having any of the above configurations, an antenna, a battery, a housing, An electronic device having at least one of a camera, a speaker, a microphone, and an operation button. It is equipment. [Effects of the Invention]

[0032] According to one aspect of the present invention, a novel peeling method can be provided. In this way, a low-cost peeling method that is highly suitable for mass production can be provided. Peeling can be performed using a standard substrate.

[0033] According to one embodiment of the present invention, a novel flexible device and a manufacturing method thereof can be provided. According to one embodiment of the present invention, a highly reliable flexible device can be provided. According to one embodiment of the present invention, a flexible device can be fabricated at low temperatures. According to one aspect of the present invention, there is provided a method for manufacturing a flexible device with a simplified manufacturing process. According to one embodiment of the present invention, a flexible device can be manufactured at low cost and with high mass productivity. According to one embodiment of the present invention, a method for manufacturing a flexible substrate using a large substrate can be provided. According to one aspect of the present invention, a device having a curved surface can be fabricated. According to one aspect of the present invention, a lightweight flexible device can be provided. According to one embodiment of the present invention, a thin and flexible device can be provided. According to one aspect of the present invention, a flexible device that can be repeatedly bent is provided. It is possible.

[0034] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0035] [Figure 1] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 2] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 3]1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 4] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 5] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 6] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 7] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 8] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 9] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 10] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 11] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 12] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 13] 1A to 1C illustrate an example of a method for manufacturing a flexible device. [Figure 14] FIG. 1 is a diagram showing an example of a flexible device. [Figure 15] FIG. 1 is a diagram showing an example of a flexible device. [Figure 16] FIG. 1 is a diagram showing an example of a flexible device. [Figure 17] FIG. 1 is a diagram showing an example of a flexible device. [Figure 18] FIG. 1 is a diagram showing an example of a flexible device. [Figure 19] FIG. 1 is a diagram showing an example of a flexible device. [Figure 20] FIG. 2 is a diagram showing an example of a display module. [Figure 21] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 22] FIG. 2 is a diagram showing a processed member according to the first embodiment. [Figure 23] Photographs showing the results of Example 1. [Figure 24] FIG. 1 shows a sample of Example 2. [Figure 25]TDS analysis results for Example 2. [Figure 26] 10 shows the Id-Vg characteristics of the transistor of Example 3. [Figure 27] 10 shows the Id-Vg characteristics of the transistor of Example 3. DETAILED DESCRIPTION OF THE INVENTION

[0036] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0037] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0038] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0039] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be replaced with "conductive film." Alternatively, for example, the term "insulating film" can be changed to The term can be changed to "insulating layer."

[0040] In this specification, the term "substrate" refers to at least one of a functional circuit, a functional element, a functional film, etc. It is preferable that the substrate has a function of supporting at least one of these. For example, the function of protecting the surface of the device or the function of , a functional element, a functional film, or the like.

[0041] (Embodiment 1) In this embodiment, a peeling method and a manufacturing method of a flexible device according to one embodiment of the present invention will be described. This will be explained with reference to FIGS. 1 to 13.

[0042] One aspect of the present invention is to form a 0.5mm thick film on a fabrication substrate using a photosensitive and thermosetting material. A resin layer of 1 μm or more and 3 μm or less is formed, and an oxide semiconductor is formed on the resin layer in the channel forming region. A transistor having the above structure is formed, and the resin layer is irradiated with laser light using a linear laser device. This is a peeling method for separating the transistor from the substrate on which it is formed.

[0043] An oxide semiconductor is used for a channel formation region of a transistor. Low Temperature Poly-Si (LTPS) The maximum process temperature can be lower than when using licon).

[0044] When LTPS is used in the channel formation region of a transistor, the temperature is set at about 500 to 550°C. Since heat is required, the resin layer must be heat resistant. In order to mitigate damage caused by the heat, it is necessary to make the resin layer thicker. Since the gap is narrow at 1.1 eV, the resin layer is not etched to peel off the transistor from the substrate. When irradiating the laser light, the resin layer is also used to prevent the silicon from absorbing the laser light. A thicker film is required.

[0045] On the other hand, unlike LTPS, transistors using oxide semiconductors do not require high-temperature heat treatment. Therefore, it can be formed at 350°C or less, or even 300°C or less. Therefore, the heat resistance temperature of the resin layer can be lowered. The range of materials to be selected is expanded. In addition, transistors using oxide semiconductors can be easily crystallized by laser. No process is required. Furthermore, the band gap of oxide semiconductors is 2.0 eV or more and 3.5 eV or less. or less (preferably 2.5 eV or more, more preferably 3 eV or more), which is wider than silicon. Therefore, even if a laser is used in the peeling process, the thickness of the resin layer is small. The resin layer does not require high heat resistance and can be made thin, so the device It is expected that the cost of manufacturing chairs will be significantly reduced. This is preferable because it simplifies the process.

[0046] In one embodiment of the present invention, a transistor or the like is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer. The heat resistance of the resin layer is, for example, the weight loss rate due to heating, specifically, the 5% weight loss temperature, etc. The 5% weight loss temperature of the resin layer can be evaluated, for example, at 450°C or less, 400°C or less, The temperature can be less than 00°C or less than 350°C. For example, the transistor can be It is produced at a temperature of 0.5°C or less, or even 300°C or less.

[0047] In one embodiment of the present invention, a resin layer is formed using a photosensitive material. In this way, a resin layer having a desired shape can be easily formed. For example, a resin layer having an opening can be formed. Alternatively, a resin layer having two or more regions with different thicknesses can be easily formed. This prevents the resin layer from interfering with the fabrication of back gates, external connection terminals, through electrodes, etc. This can prevent this from happening.

[0048] In one embodiment of the present invention, laser light is irradiated using a linear laser device. Since conventional laser devices can be used, these devices can be utilized effectively. The linear laser device focuses light into a long rectangular shape (shaping it into a linear laser beam) and irradiates the resin layer with the light. Shoot.

[0049] A flexible device can be manufactured using the peeling method according to one embodiment of the present invention. An example of a method for manufacturing a flexible device will be described with reference to FIGS. 1 and 2.

[0050] First, as shown in FIG. 1(A), the first laminate 110 and the second laminate 120 are bonded to each other by an adhesive layer 13. Glue together using 2.

[0051] The first laminate 110 includes a substrate 111, a resin layer 112, an insulating layer 113, and a transistor. The display element 131 includes a layer 114 containing a light-emitting element.

[0052] Here, the display element 131 is preferably located within 10 μm from the neutral plane, and more preferably within 5 μm. It is more preferable that the distance be within 2.5 μm, and even more preferable that the distance be within 2.5 μm.

[0053] When an EL element is used as the display element 131, there are portions of the display element 131 that have low adhesion. By arranging the display element 131 at a position close to the neutral plane, the display element 13 This can reduce the stress applied to the display device during the peeling process and the manufacturing process of the display device. This can prevent film peeling when the display device is bent for use.

[0054] The resin layer 112 is made of a photosensitive and thermosetting material and has a thickness of 0.1 μm to 3 μm. It is formed as follows:

[0055] The layer 114 including the transistor includes a transistor having an oxide semiconductor in a channel formation region. It has.

[0056] The second laminate 120 includes a fabrication substrate 121, a resin layer 122, an insulating layer 123, and a functional layer 12. It has 4.

[0057] The resin layer 122 is made of a photosensitive and thermosetting material and has a thickness of 0.1 μm to 3 μm. The functional layer 124 is formed as follows. For example, a colored layer such as a color filter, a black matrix, The display panel has at least one of a light-shielding layer such as a light shielding layer, and a detection element such as a touch sensor.

[0058] Next, as shown in FIG. 1B, a laser beam 160 is irradiated onto the resin layer 112 through the fabrication substrate 111. It is preferable to use a linear laser device for irradiating the laser light. The light source is moved relative to the substrate 11 to irradiate the laser light. 1 is separated before the fabrication substrate 121, but the present invention is not limited to this. When the resin layer 122 is first separated, a linear laser device is used to separate the resin layer 122 through the fabrication substrate 121. is irradiated with laser light.

[0059] Next, as shown in FIG. 1(C), the fabrication substrate 111 and the insulating layer 113 are separated. ) shows an example in which separation occurs in the resin layer 112. On the fabrication substrate 111, a part of the resin layer ( The resin layer 112 remaining on the insulating layer 113 side is smaller than that in FIG. The thickness of the resin layer 112 varies depending on the manufacturing conditions (material of the resin layer 112, laser irradiation conditions, etc.). This may result in separation at the interface between the fabrication substrate 111 and the resin layer 112 .

[0060] Next, as shown in FIG. 1(D), the exposed resin layer 112 and the substrate 141 are bonded together. The plate 141 is preferably flexible. For example, the resin layer 112 and the substrate 141 are bonded to each other. They can be attached using an adhesive.

[0061] Next, as shown in FIG. 2(A), a laser beam 160 is irradiated onto the resin layer 122 through the fabrication substrate 121. It is preferable to use a linear laser device for irradiating the laser light. The light source is moved relative to 21 to irradiate the laser light.

[0062] Next, as shown in FIG. 2(B), the fabrication substrate 121 and the insulating layer 123 are separated. ) shows an example in which separation occurs in the resin layer 122. On the fabrication substrate 121, a part of the resin layer ( The resin layer 122 remaining on the insulating layer 123 side is smaller than that in FIG. All of the films are thin-filmed.

[0063] Next, as shown in FIG. 2(C), the exposed resin layer 122 and the substrate 151 are bonded together. The plate 151 is preferably flexible.

[0064] By the above steps, the flexible device 100 shown in FIG. 2(D) can be fabricated. do.

[0065] In the peeling method and the manufacturing method of a flexible device according to one embodiment of the present invention, By using an oxide semiconductor for the channel formation region, the manufacturing process of the transistor can be performed at a low temperature. In addition, the resin layer can be made thin and have low heat resistance. Wide range of choices for adhesive layer materials, low cost and high mass productivity, peeling and flapping possible using large substrates This has the advantage that flexible devices can be fabricated.

[0066] Hereinafter, a method for manufacturing a flexible device according to one embodiment of the present invention will be described with reference to FIGS. 3 to 13. Here, a transistor is used as a flexible device. and a display device having an organic EL element (also called an active matrix organic EL display device). The display device is manufactured using a flexible material for the substrate. By using this, it is possible to make a foldable organic EL display device. Cut.

[0067] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device are formed by sputtering, Chemical Vapor Deposition (CVD) method, Vacuum evaporation, pulsed laser deposition (PLD) on) method, Atomic Layer Deposition (ALD) method The CVD method can be plasma-enhanced chemical vapor deposition (PECV) or the like. D:Plasma Enhanced Chemical Vapor Deposit The thermal CVD method may be a metal organic chemical vapor deposition (MOCVD) method. OCVD (Metal Organic CVD) method may also be used.

[0068] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are formed by spin coating, dipping, Spray application, inkjet, dispensing, screen printing, offset printing, document printing For methods such as turn knife, slit coating, roll coating, curtain coating, and knife coating It can be formed more easily.

[0069] When processing the thin films that make up the display device, lithography methods can be used. Alternatively, island-shaped thin films may be formed by a film formation method using a shielding mask. Even if the thin film is processed by nanoimprinting, sandblasting, lift-off, etc. The photolithography method involves forming a resist mask on the thin film to be processed, The thin film is processed by etching or the like, and the resist mask is removed. a method of forming a thin film by exposing and developing it to a desired shape, There is.

[0070] When light is used in the lithography method, the light used for exposure is, for example, i-line (wavelength 365nm) m), g-ray (wavelength 436 nm), h-ray (wavelength 405 nm), or a mixture of these In addition, ultraviolet light, KrF laser light, ArF laser light, etc. can be used. It is also possible to use a liquid immersion exposure technique. Examples of light that can be used include extreme ultraviolet (EUV) and X-rays. Alternatively, an electron beam may be used instead of the light used for exposure. Extremely fine processing is possible using ultraviolet light, X-rays, or electron beams, and is therefore preferred. When exposure is performed by scanning a beam such as an electron beam, a photomath No sc is required.

[0071] For etching thin films, there are dry etching, wet etching, and sandblasting methods. etc. can be used.

[0072] [Production method example 1] First, a resin layer 23 is formed on the substrate 14 using a photosensitive and thermosetting material. (Figure 3(A)).

[0073] Specifically, a photosensitive and thermosetting material is applied to a film having a thickness of 0.1 μm to 3 μm. The resin layer 23 is formed by heating the resin layer 23. In particular, the amount of gas components (e.g., hydrogen, water, etc.) formed on the resin layer 23 can be reduced. It is preferable to heat the layers at a temperature equal to or higher than the temperature at which each layer is formed. When the transistor manufacturing temperature is up to 350° C., the film that will become the resin layer 23 is heated at 350° C. or higher for 4 hours. It is preferable to heat at 50°C or less, more preferably at 350°C or more and 400°C or less, and 35 A temperature of 0°C or higher and lower than 400°C is more preferred, and a temperature of 350°C or higher and lower than 375°C is even more preferred. This significantly reduces gas release from the resin layer 23 during the transistor manufacturing process. It is possible.

[0074] In one embodiment of the present invention, a film that becomes the resin layer 23 is formed using a photosensitive material. A portion of the film can be removed by a photolithography method. After the material is deposited, a heat treatment (also called a pre-bake treatment) is performed to remove the solvent. After that, exposure is performed using a photomask. Then, development is performed to remove unnecessary parts. In addition, a heat treatment (also called a post-baking treatment) can be performed afterwards. In the post-baking treatment, the resin layer 23 is heated at a temperature equal to or higher than the temperature at which each layer is formed on the resin layer 23. Heating is preferred.

[0075] The resin layer 23 has flexibility. The fabrication substrate 14 has lower flexibility than the resin layer 23. By forming the resin layer 23 on the substrate 14, the resin layer 23 can be easily transported. .

[0076] The resin layer 23 is formed by using a photosensitive polyimide resin. It is preferable to use polyimide (also called PSPI).

[0077] Other materials that can be used to form the resin layer 23 include, for example, acrylic resin. , epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclohexane Examples of the resin include hydroxylase resins and phenolic resins.

[0078] The resin layer 23 is preferably formed using a spin coater. This allows a thin film to be formed uniformly on a large substrate.

[0079] The resin layer 23 has a viscosity of 5 cP or more and less than 500 cP, preferably 5 cP or more and less than 100 cP. It is preferable to form the film using a solution having a viscosity of less than 10 cP, preferably 10 cP or more and 50 cP or less. The lower the viscosity of the solution, the easier it is to apply. Contamination can be suppressed and a high-quality film can be formed.

[0080] The thickness of the resin layer 23 is preferably 0.01 μm or more and less than 10 μm, and more preferably 0.1 μm or more. It is more preferable that the thickness is 0.1 μm or more and 5 μm or less, and more preferable that the thickness is 0.1 μm or more and 3 μm or less. It is preferable that the particle size is 0.5 μm or more and 1 μm or less, and more preferable that the particle size is 0.5 μm or more and 1 μm or less. This makes it easy to form a thin resin layer 23. This allows the display device to be manufactured at low cost. Also, the display device can be made lighter and thinner. In addition, the flexibility of the display device can be improved. However, the present invention is not limited to this. The thickness of the resin layer 23 may be 10 μm or more. For example, the thickness of the resin layer 23 may be 10 μm or more and 20 μm or more. By making the thickness of the resin layer 23 10 μm or more, the rigidity of the display device can be improved. This is preferable because it can improve the performance.

[0081] Other methods for forming the resin layer 23 include dipping, spray coating, inkjet, Dispensing, screen printing, offset printing, doctor knife, slit coat, Examples include roll coat, curtain coat, knife coat, etc.

[0082] The thermal expansion coefficient of the resin layer 23 is preferably 0.1 ppm / °C or more and 20 ppm / °C or less. The resin layer 23 preferably has a viscosity of 0.1 ppm / °C or more and 10 ppm / °C or less. The lower the thermal expansion coefficient of the material, the more likely it is that the transistors and other components will be prevented from being damaged by heat.

[0083] When the resin layer 23 is located on the display surface side of the display device, the resin layer 23 has a transparency to visible light. is preferably high.

[0084] The substrate 14 to be fabricated has a rigidity sufficient to facilitate transportation and a resistance to temperatures applied during the fabrication process. The substrate 14 has heat resistance. Examples of materials that can be used for the substrate 14 include glass, Examples include quartz, ceramic, sapphire, resin, semiconductor, metal or alloy. Examples of the glass include alkali-free glass, barium borosilicate glass, and aluminoborosilicate glass. Acid glass and the like are included.

[0085] Next, an insulating layer 31 is formed on the resin layer 23 (FIG. 3(B)).

[0086] The insulating layer 31 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. The resin layer 23 is formed at a temperature equal to or lower than the heating temperature in the heating step. It is preferable.

[0087] The insulating layer 31 prevents impurities contained in the resin layer 23 from penetrating the transistors and display elements to be formed later. For example, the insulating layer 31 can be made of a resin. When the resin layer 23 is heated, the moisture contained in the resin layer 23 diffuses into the transistors and the display elements. Therefore, it is preferable that the insulating layer 31 has a high barrier property. stomach.

[0088] The insulating layer 31 may be, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, Using inorganic insulating films such as silicon nitride oxide film, aluminum oxide film, and aluminum nitride film In addition, hafnium oxide film, yttrium oxide film, zirconium oxide film, Gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide Alternatively, two or more of the above insulating films may be stacked. In particular, a silicon nitride film is formed on the resin layer 23, and a silicon oxide film is formed on the silicon nitride film. The higher the film formation temperature, the denser the inorganic insulating film and the higher the barrier properties. Since a thin film is formed, it is preferable to form the film at a high temperature.

[0089] When an inorganic insulating film is used for the insulating layer 31, the substrate temperature during film formation is set to a value between room temperature (25°C) and 350°C. °C or less, and more preferably 100 to 300 °C.

[0090] If the surface of the resin layer 23 is uneven, the insulating layer 31 preferably covers the unevenness. The insulating layer 31 may function as a planarizing layer that flattens the unevenness. Preferably, the insulating layer 31 is made by laminating an organic insulating material and an inorganic insulating material. The insulating material may be a resin that can be used for the resin layer 23.

[0091] When an organic insulating film is used for the insulating layer 31, the temperature applied to the resin layer 23 during the formation of the insulating layer 31 is The temperature is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C.

[0092] Next, a transistor 40 is formed on the insulating layer 31 (FIG. 3(C)).

[0093] The structure of the transistor included in the display device is not particularly limited. It may be a staggered transistor, or an inverse staggered transistor. In addition, the transistor may be of either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

[0094] Here, the transistor 40 is a bottom-gate transistor having an oxide semiconductor layer 44. This shows the case of fabricating a transistor.

[0095] In one embodiment of the present invention, an oxide semiconductor is used as a semiconductor for a transistor. If a semiconductor material with a wider band gap and lower carrier density than This is preferable because it can reduce the current when the transistor is in the off state.

[0096] The transistor 40 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. 40 is a temperature that is the same as or lower than the heating temperature in the heating step of the resin layer 23 described above. It is preferable to form it at a high degree.

[0097] Specifically, first, the conductive layer 41 is formed on the insulating layer 31. The conductive layer 41 is formed by depositing a conductive film. After that, a resist mask is formed, and after the conductive film is etched, the resist mask is removed. It can be formed by removing

[0098] The substrate temperature during the deposition of the conductive film is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C. is more preferable.

[0099] The conductive layers of the display device are made of aluminum, titanium, chromium, nickel, and copper. , yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, etc. Metals or alloys containing metals as the main component can be used as single layer structures or laminated structures. Alternatively, indium oxide, indium tin oxide (ITO), and indium containing tungsten Indium oxide, indium zinc oxide with tungsten, indium oxide with titanium Materials, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), gallium doped Conductive materials with transparency such as ZnO containing silicon or indium tin oxide containing silicon are used. Polycrystalline silicon that has been made low-resistance by including impurity elements may also be used. Alternatively, a semiconductor such as an oxide semiconductor, or a silicide such as nickel silicide may be used. A film containing graphene can also be used. The film containing graphene is, for example, a film The graphene oxide film can be formed by reducing the graphene oxide film. A semiconductor such as an oxide semiconductor containing an element may be used. It is formed using a conductive paste such as copper or a conductive polymer such as polythiophene. Conductive paste is preferable because it is inexpensive. Conductive polymer is easy to apply. preferable.

[0100] Subsequently, the insulating layer 32 is formed. The insulating layer 32 is made of an inorganic insulating material that can be used for the insulating layer 31. The velum can be used.

[0101] Next, the oxide semiconductor layer 44 is formed. The oxide semiconductor layer 44 is formed by depositing an oxide semiconductor film. After that, a resist mask is formed, and the oxide semiconductor film is etched. It can be formed by removing the mask.

[0102] The substrate temperature during deposition of the oxide semiconductor film is preferably 350° C. or lower, and more preferably room temperature or higher and 200° C. or lower. more preferably, and even more preferably, from room temperature to 130°C.

[0103] The oxide semiconductor film is formed using either one or both of an inert gas and an oxygen gas. Note that the flow rate ratio of oxygen (oxygen partial pressure) during the formation of the oxide semiconductor film can be However, in order to obtain a transistor with high field effect mobility, The flow rate ratio of oxygen (oxygen partial pressure) during the formation of the oxide semiconductor film is 0% or more and 30% or less. It is preferably 5% or more and 30% or less, more preferably 7% or more and 15% or less.

[0104] The oxide targets that can be used for forming oxide semiconductor films include In-M-Zn based oxides. In-Ga ions (where M is Al, Ga, Y, or Sn) can be used. It is preferable to use a -Zn-based oxide.

[0105] The oxide semiconductor film can be formed by sputtering. The LD method, PECVD method, thermal CVD method, ALD method, vacuum deposition method, etc. may also be used.

[0106] Subsequently, the conductive layer 43a and the conductive layer 43b are formed. After forming a conductive film, a resist mask is formed, and the conductive film is etched. The mask can be removed to form the insulating film.

[0107] When the conductive layers 43a and 43b are processed, the acid not covered with the resist mask is A part of the compound semiconductor layer 44 may be thinned by etching.

[0108] The substrate temperature during the deposition of the conductive film is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C. is more preferable.

[0109] In this manner, the transistor 40 can be manufactured (FIG. 3C). In this case, a part of the conductive layer 41 functions as a gate, and a part of the insulating layer 32 functions as a gate insulating layer. The conductive layer 43a and the conductive layer 43b function as either a source or a drain. It functions as one side.

[0110] Next, an insulating layer 33 is formed to cover the transistor 40 (FIG. 3(D)). It can be formed in the same manner as the edge layer 31.

[0111] The insulating layer 33 is made of silicon oxide film formed at a low temperature in an oxygen-containing atmosphere. It is preferable to use an oxide insulating film such as a silicon oxide nitride film or a silicon oxynitride film. Silicon film or silicon oxynitride film is covered with an insulating film that is difficult for oxygen to diffuse or penetrate, such as a silicon nitride film. It is preferable to laminate an insulating film on the oxide insulating film formed at a low temperature in an atmosphere containing oxygen. This makes it possible to provide an insulating film that easily releases a large amount of oxygen when heated. The oxide insulating film that releases oxygen and the insulating film that does not easily diffuse or penetrate oxygen are stacked together, and then heat treatment is performed. By performing this, oxygen can be supplied to the oxide semiconductor layer 44. The oxygen vacancies in the semiconductor layer 44 and the defects at the interface between the oxide semiconductor layer 44 and the insulating layer 33 are repaired. This allows for the reduction of defect levels, resulting in extremely reliable flexible devices. This can be realized.

[0112] By the above steps, the insulating layer 31, the transistor 40, and the insulating layer 33 are formed on the resin layer 23. This can be achieved (Figure 3(D)).

[0113] At this stage, the fabricated substrate 14 is separated from the insulating layer 31 by a method to be described later. In this case, a flexible device without a display element can be fabricated. In addition to the transistor 40, a capacitor element, a resistor element, and wiring are formed. The semiconductor circuit is then separated from the substrate 14 by the method described below. It is possible to fabricate a flexible device having such a structure.

[0114] Next, an insulating layer 34 is formed on the insulating layer 33 (FIG. 3(E)). Since the layer has a surface on which a display element is to be formed, it preferably functions as a planarizing layer. The insulating layer 34 can be made of an organic insulating film or an inorganic insulating film that can be used for the insulating layer 31. do.

[0115] The insulating layer 34 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. The resin layer 23 is formed at a temperature equal to or lower than the heating temperature in the heating step. It is preferable.

[0116] When an organic insulating film is used for the insulating layer 34, the temperature applied to the resin layer 23 during the formation of the insulating layer 34 is The temperature is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C.

[0117] When an inorganic insulating film is used for the insulating layer 34, the substrate temperature during film formation is preferably from room temperature to 350° C. The temperature is preferably 100°C or higher and 300°C or lower, more preferably.

[0118] Next, openings are formed in the insulating layer 34 and the insulating layer 33 down to the conductive layer 43b.

[0119] Then, a conductive layer 61 is formed (FIG. 4(A)). The conductive layer 61 functions as a pixel electrode. The conductive film is etched, and then the resist mask is removed, whereby the insulating film can be formed.

[0120] The conductive layer 61 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. The resin layer 23 is formed at a temperature equal to or lower than the heating temperature in the heating step. It is preferable.

[0121] The substrate temperature during the deposition of the conductive film is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C. is more preferable.

[0122] Next, the insulating layer 35 is formed to cover the end of the conductive layer 61 (FIG. 4(A)). The insulating film may be an organic insulating film or an inorganic insulating film that can be used for the edge layer 31 .

[0123] The insulating layer 35 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. The resin layer 23 is formed at a temperature equal to or lower than the heating temperature in the heating step. It is preferable.

[0124] When an organic insulating film is used for the insulating layer 35, the temperature applied to the resin layer 23 during the formation of the insulating layer 35 is The temperature is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C.

[0125] When an inorganic insulating film is used for the insulating layer 35, the substrate temperature during film formation is preferably from room temperature to 350° C. The temperature is preferably 100°C or higher and 300°C or lower, more preferably.

[0126] Next, an EL layer 62 and a conductive layer 63 are formed (FIG. 4(B)). It functions as a common electrode for the display element 60 .

[0127] The EL layer 62 can be formed by a method such as vapor deposition, coating, printing, or ejection. When the L layer 62 is formed separately for each pixel, a deposition method using a shielding mask such as a metal mask or Alternatively, the EL layer 62 can be formed by an ink jet method or the like. In such a case, a deposition method that does not use a metal mask can be used.

[0128] The EL layer 62 can be made of either a low molecular weight compound or a high molecular weight compound. The compound may be included.

[0129] The conductive layer 63 can be formed by vapor deposition, sputtering, or the like.

[0130] The EL layer 62 and the conductive layer 63 are each formed at a temperature equal to or lower than the heat resistance temperature of the resin layer 23 . The EL layer 62 and the conductive layer 63 are formed by heating the resin layer 23 in the heating step. It is preferable that the conductive layer 63 is formed at a temperature equal to or lower than the thermal temperature. It is formed at a temperature equal to or lower than the heat resistance temperature of the L layer 62 .

[0131] Specifically, the temperature during the formation of the EL layer 62 and the conductive layer 63 is set to a value higher than room temperature and 350° C. It is preferable to form the film at a temperature of room temperature or higher and 300°C or lower, and more preferable to form the film at a temperature of room temperature or higher and 300°C or lower. .

[0132] In this manner, the display element 60 can be formed (FIG. 4(B)). The conductive layer 61, a part of which functions as a pixel electrode, the EL layer 62, and a part of which functions as a common electrode are included. It has a structure in which functional conductive layers 63 are stacked.

[0133] Here, an example of manufacturing a top-emission type light-emitting element as the display element 60 is shown. However, one embodiment of the present invention is not limited to this.

[0134] The light emitting elements are top emission type, bottom emission type, and dual emission type. For the electrode on the light extraction side, a conductive film that transmits visible light is used. It is also preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. .

[0135] Next, an insulating layer 74 is formed to cover the conductive layer 63 (FIG. 4(C)). The display element 60 functions as a protective layer that prevents impurities such as water from diffusing into the display element 60. is encapsulated by an insulating layer 74.

[0136] The insulating layer 74 is heat-resistant to a temperature that is equal to or lower than the heat-resistant temperature of the resin layer 23 and the display element 60. The insulating layer 74 is formed at the same heating temperature as that in the heating step of the resin layer 23 described above. It is preferred to form the film at or below this temperature.

[0137] The insulating layer 74 is, for example, an inorganic insulating material with high barrier properties that can be used for the insulating layer 31 described above. It is preferable that the insulating film is included. It's fine.

[0138] Next, a protective layer 75 is formed on the insulating layer 74 (FIG. 5(A)). The protective layer 75 can be used as the outermost layer of the transparent conductive film 70. High solubility is preferred.

[0139] When the protective layer 75 is made of an organic insulating film that can be used for the insulating layer 31, the surface This is preferable because it can prevent scratches and cracks from occurring on the surface of the display device. The protective layer 75 is made up of the organic insulating film and a hard coat layer ( For example, a silicon nitride layer, or a layer of a material that can disperse pressure (for example, an aramid resin layer) The film may have a laminated structure.

[0140] FIG. 5B shows an example in which a substrate 75a is attached onto an insulating layer 74 using an adhesive layer 75b. The substrate 75a may be made of a resin or the like. The substrate 75a is preferably flexible. I wish.

[0141] The adhesive layer 75b may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a thermosetting adhesive. Various curing adhesives such as adhesives and anaerobic adhesives can be used. It's fine.

[0142] The substrate 75a is made of, for example, polyethylene terephthalate (PET), polyethylene naphtha Polyester resins such as PEN, polyacrylonitrile resins, acrylic resins, Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polyestersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane San resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane Tan resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polyethylene Polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. You can be there.

[0143] Next, the resin layer 23 is irradiated with laser light 65 through the fabrication substrate 14 (FIG. 6(A)).

[0144] For example, excimer lasers with a wavelength of 308 nm, solid-state UV with wavelengths of 343 nm or 355 nm A laser or the like can be used. A linear laser device is preferably used for irradiating the laser light. The laser light is irradiated by moving the light source relative to the substrate 14 to be fabricated.

[0145] Because solid-state lasers do not use gas, the running costs are approximately 1 / 2 of those of excimer lasers. It can be set to 3, which is preferable.

[0146] Next, the fabricated substrate 14 and the insulating layer 31 are separated (FIG. 6(B)). This shows an example in which separation occurs in the resin layer 23. A part of the resin layer (resin layer 23a) remains on the fabricated substrate 14. The resin layer 23 remaining on the insulating layer 31 side is thinner than that in FIG. 6(A).

[0147] The thickness of the resin layer 23a remaining on the fabrication substrate 14 side is, for example, 100 nm or less. The thickness can be set to about 40 nm or more and 70 nm or less. The substrate 111 can be reused. For example, the substrate 14 is made of glass, and the resin layer 23 When a polyimide resin is used, the resin layer 23a can be removed using fuming nitric acid. Further, a photosensitive and thermosetting resin is again applied to the resin layer 23a remaining on the fabrication substrate 14. The resin layer 23 may be formed using a material such as the above.

[0148] For example, by applying a pulling force to the resin layer 23 in the vertical direction, at least the resin layer 23 Part of the upper surface of the protective layer 75 can be peeled off from the fabrication substrate 14. By adsorbing and pulling upward, at least a part of the resin layer 23 is removed from the fabrication substrate 14. It can be torn off.

[0149] The substrate 14 and the insulating layer 31 are separated by inserting a sharp tool such as a blade between them. It is preferable to form the starting point of

[0150] The display device 10 can be manufactured by separating the manufacturing substrate 14 from the insulating layer 31. (FIG. 6(C)). The display device 10 can be maintained in a bent state and bent repeatedly. And so on.

[0151] As shown in FIG. 6(D), a substrate 29 is attached to the surface exposed by the separation using an adhesive layer 28. The substrate 29 can function as a support substrate for the flexible device. FIG. 6(D) shows a state in which the resin layer 23 and the substrate 29 are bonded together by the adhesive layer 28. Here is an example.

[0152] The substrate 29 can be made of any material that can be used for the substrate 75a.

[0153] Through the above process, oxide semiconductors are applied to transistors, and a separate coloring method is applied to EL elements. Applied display devices can be fabricated.

[0154] [Production method example 2] First, in the same manner as in the manufacturing method example 1, the resin layer 23 to the insulating layer 35 are formed in this order on the manufacturing substrate 14. (Figure 7(A)).

[0155] Next, as shown in FIG. 7(B), a protective layer 71 is formed.

[0156] The protective layer 71 has a function of protecting the surfaces of the insulating layer 35 and the conductive layer 61 in the peeling process. The protective layer 71 may be made of a material that can be easily removed.

[0157] An example of the removable protective layer 71 is a water-soluble resin. The water-soluble resin covers the unevenness of the surface, making it easy to protect the surface. The protective layer 71 is made by laminating a water-soluble resin with a light- or heat-peelable adhesive. It's fine.

[0158] The removable protective layer 71 has strong adhesive strength under normal conditions, and is easily removed by applying heat or light. A substrate having a property that its adhesive strength is weakened by irradiation may also be used. For example, Heat-release tape that loses adhesive strength when heated, and adhesive tape that adheres when exposed to ultraviolet light You can also use UV peeling tape, which has weak adhesive strength under normal conditions. Tape or the like can be used.

[0159] Next, the substrate 14 and the insulating layer 31 are separated by the same method as in Example 1 of Fabrication Method (see FIG. 7(C)). FIG. 7(C) shows an example in which separation occurs in the resin layer 23. A part of the resin layer (resin layer 23a) remains on the insulating layer 31 side. It is thinner than (B).

[0160] After the fabrication substrate 14 and the insulating layer 31 are separated, the protective layer 71 is removed (FIG. 7(C)).

[0161] Subsequently, an EL layer 62 and a conductive layer 63 are formed to form a display element 60 (see FIG. 7(D)).

[0162] The EL layer 62 and the conductive layer 63 are formed in a state where the resin layer 23 (or the insulating layer 31) is fixed to the stage. However, as shown in FIG. 7(D), a tape 72 or the like may be used on a support substrate 73 to form the film. It is preferable to fix the support substrate 73 and perform film formation in this state with the support substrate 73 placed on the stage of the film formation apparatus. By fixing the resin layer 23 to the support substrate 73, the resin layer 23 can be easily fixed within the device and between the devices. The support substrate 73 can be made of a material that can be used for the fabrication substrate 14. Any suitable substrate can be applied.

[0163] Next, the substrate 22 is bonded onto the display element 60 using the adhesive layer 13. The display element 60 can be sealed with the adhesive layer 13 and the substrate 22 (FIG. 7(E)).

[0164] The adhesive layer 13 can be made of the same material as can be used for the adhesive layer 75b.

[0165] The substrate 22 can be made of any material that can be used for the substrate 75a.

[0166] As in the first example of the manufacturing method, an insulating layer 74 is formed on the display element 60 to insulate the display element 60. It may be sealed with an edge layer 74. Then, a protective layer 75 may be formed on the insulating layer 74.

[0167] Through the above steps, the display device 10 can be manufactured (FIG. 7(E)).

[0168] In the manufacturing method example 2, after the peeled layer is peeled from the manufacturing substrate 14, the EL layer is formed on the peeled layer. The EL layer 62 and the conductive layer 63 can be formed. If there is a problem, forming these layers after peeling can prevent a decrease in the peeling yield. By using Example Manufacturing Method 2, the freedom of material selection is increased, and reliable wiring can be obtained at lower cost. A highly reliable display device can be realized.

[0169] [Production method example 3] First, in the same manner as in the manufacturing method example 1, the resin layer 23 to the display element 60 are sequentially formed on the manufacturing substrate 14. (Figure 8(A)).

[0170] Further, a resin layer 93 is formed on the fabrication substrate 91 using a material having photosensitivity and thermosetting properties. (Figure 8(B)).

[0171] The resin layer 93 has flexibility. The fabrication substrate 91 has lower flexibility than the resin layer 93. By forming the resin layer 93 on the substrate 91, the resin layer 93 can be easily transported. .

[0172] It is preferable to use polyimide resin for the resin layer 93. Other materials for the resin layer 93 include The description of the resin layer 23 can be applied to the formation method.

[0173] The thickness of the resin layer 93 is preferably 0.01 μm or more and less than 10 μm, and is preferably 0.1 μm or more. It is more preferable that the thickness is 0.1 μm or more and 5 μm or less, and more preferable that the thickness is 0.1 μm or more and 3 μm or less. It is preferable that the particle size is 0.5 μm or more and 1 μm or less, and more preferable that the particle size is 0.5 μm or more and 1 μm or less. This makes it easy to form a thin resin layer 93. This allows the display device to be manufactured at low cost. Also, the display device can be made lighter and thinner. In addition, the flexibility of the display device can be improved. However, the present invention is not limited to this. For example, the thickness of the resin layer 93 may be set to 10 μm or more and 20 μm or more. By making the thickness of the resin layer 93 10 μm or more, the rigidity of the display device can be improved. This is preferable because it can improve the performance.

[0174] When the resin layer 93 is located on the display surface side of the display device, the resin layer 93 has a transparency to visible light. is preferably high.

[0175] For the preparation substrate 91, the description of the preparation substrate 14 can be applied.

[0176] Next, an insulating layer 95 is formed on the resin layer 93. Next, a coloring layer 97 and a shielding layer 98 are formed on the insulating layer 95. An optical layer 98 is formed (FIG. 8(B)).

[0177] For the insulating layer 95, the description of the insulating layer 31 can be applied.

[0178] A color filter or the like can be used as the colored layer 97. The colored layer 97 is Place it so that it overlaps with the display area of ​​the

[0179] A black matrix or the like can be used as the light-shielding layer 98. The light-shielding layer 98 is an insulating layer. Place it so that it overlaps with 35.

[0180] Next, the surface of the fabrication substrate 14 on which the resin layer 23 and the like are formed is bonded to the surface of the fabrication substrate 91 on which the resin layer 93 and the like are formed. The surface on which the adhesive layer 99 is formed is then bonded to the surface on which the adhesive layer 99 is formed (FIG. 8(C)).

[0181] Next, the resin layer 23 is irradiated with laser light 65 through the fabrication substrate 14 (FIG. 9(A)). An example in which the fabrication substrate 14 is separated before the fabrication substrate 91 is shown below.

[0182] Next, the fabrication substrate 14 and the insulating layer 31 are separated (FIG. 9(B)). This shows an example in which separation occurs in the resin layer 23. A part of the resin layer (resin layer 23a) remains on the fabricated substrate 14. The resin layer 23 remaining on the insulating layer 31 side is thinner than that shown in FIG. Then, the exposed resin layer 23 and the substrate 29 are bonded together using an adhesive layer 28 (FIG. 9(C) ).

[0183] Next, the resin layer 93 is irradiated with laser light 65 through the fabrication substrate 91 (FIG. 10(A)).

[0184] Next, the fabricated substrate 91 and the insulating layer 95 are separated, and the exposed resin layer 93 and the substrate 22 are bonded together with an adhesive layer. 10(B)). In FIG. 10(B), separation occurs in the resin layer 93. A part of the resin layer (resin layer 93a) remains on the fabricated substrate 91. The resin layer 93 remaining on the 95 side is thinner than that in FIG. 10(A).

[0185] In FIG. 10B, the light emitted from the display element 60 passes through the colored layer 97 and the resin layer 93. Therefore, it is preferable that the resin layer 93 has a high transmittance for visible light. In the peeling method according to one aspect of the present invention, the thickness of the resin layer 93 can be reduced. Therefore, the transmittance of the resin layer 93 to visible light can be increased.

[0186] As shown in FIG. 10(C), the resin layer 93 is removed, and the substrate is attached to the insulating layer 95 using the adhesive layer 13. 22 may be pasted together.

[0187] Through the above process, an oxide semiconductor is applied to a transistor, and a color filter method is applied. A display device having such a structure can be manufactured.

[0188] In Example 3 of the manufacturing method, a flexible device is manufactured by performing the peeling method according to one embodiment of the present invention twice. In one aspect of the present invention, all of the functional elements constituting the flexible device are Since it is formed on a manufacturing substrate, flexibility is maintained even when manufacturing a high-definition display device. Therefore, a substrate having flexibility can be easily used. You can attach the board.

[0189] As described in this embodiment, in the peeling method of one embodiment of the present invention, The resin layer can be made thin and have low heat resistance. Therefore, there is a wide range of resin layer material options, and it is suitable for low-cost mass production and large-format substrates. It has the advantage of being able to peel off and fabricate flexible devices using In addition, it may be possible to prevent the flexible device from warping due to the thickness of the resin layer.

[0190] [Production Method Example 4] In the peeling method according to one embodiment of the present invention, a resin layer is formed using a photosensitive material. A resin layer having a desired shape can be easily formed.

[0191] For example, an opening is formed in the resin layer, and a conductive layer is disposed so as to cover the opening, thereby After the separation process, a partially exposed electrode (also called a back electrode or a through electrode) can be formed. The electrodes can also be used as external connection terminals.

[0192] In the manufacturing method example 4, the external connection terminal and the flexible printed circuit board are connected through the opening formed in the resin layer. This shows an example of electrically connecting to a circuit board such as a flexible printed circuit board (FPC).

[0193] First, a photosensitive and thermosetting material is used to form a resin layer 23 on the substrate 14. A film 21 is formed (FIG. 11(A)).

[0194] Specifically, a photosensitive and thermosetting material is applied to a film having a thickness of 0.1 μm to 3 μm. A film is formed.

[0195] Next, the solvent is removed by heat treatment, and the film is exposed to light using a photomask. is carried out to process the film 21 into a desired shape.

[0196] For example, FIG. 11(B) shows an example in which an opening is provided in the resin layer 23. Also, FIG. 12(B) shows an example in which an opening is provided in the resin layer 23. 1 shows an example in which a first region and a second region thinner than the first region are provided in the resin layer 23. vinegar.

[0197] Next, the film 21 processed into the desired shape is heated to form a resin layer 23 (FIG. 11(B)). In particular, the resin layer 23 is heated at a temperature equal to or higher than the temperature at which each layer is formed on the resin layer 23. For example, when the manufacturing temperature of a transistor is up to 350° C., it is preferable to use a resin. The film 21 that will become the layer 23 is preferably heated at 350°C or higher and 450°C or lower. More preferably, the temperature is 350°C or higher but lower than 400°C. It is more preferable that the temperature is not lower than 375°C. Gas release from the fat layer 23 can be significantly suppressed.

[0198] Next, an insulating layer 31 is formed on the resin layer 23. Next, a transistor 8 is formed on the insulating layer 31. Form 0.

[0199] Here, the transistor 80 is a transistor having an oxide semiconductor layer 44 and two gates. This shows the case of creating a resistor.

[0200] The transistor 80 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. 80 is heated at a temperature equal to or lower than the heating temperature in the heating step of the resin layer 23 described above. It is preferable to form

[0201] Specifically, first, the conductive layer 81 is formed on the insulating layer 31. The conductive layer 81 is formed by depositing a conductive film. After that, a resist mask is formed, and after the conductive film is etched, the resist mask is removed. It can be formed by removing

[0202] Subsequently, the insulating layer 82 is formed. The insulating layer 82 is made of an inorganic insulating material that can be used for the insulating layer 31. The velum can be used.

[0203] Next, the oxide semiconductor layer 83 is formed. The oxide semiconductor layer 83 is formed by depositing an oxide semiconductor film. After that, a resist mask is formed, and the oxide semiconductor film is etched. The oxide semiconductor layer 83 can be formed by removing the oxide semiconductor layer 44. Materials that can be used to

[0204] Subsequently, an insulating layer 84 and a conductive layer 85 are formed. The insulating layer 84 is used for the insulating layer 31. The insulating layer 84 and the conductive layer 85 can be made of an insulating material that can be used as the insulating layer 84. After forming the insulating film and the conductive film that will become the conductive layer 85, a resist mask is formed. The conductive film can be formed by etching the conductive film and then removing the resist mask.

[0205] Next, the insulating layer 33 is formed to cover the oxide semiconductor layer 83, the insulating layer 84, and the conductive layer 85 ( The insulating layer 33 can be formed by the same method as the insulating layer 31.

[0206] Here, the insulating layer 31, the insulating layer 82, and the insulating layer 33 overlap the openings of the resin layer 23, respectively. The openings may be formed in a plurality of layers at once. An opening may be formed for each single layer.

[0207] Subsequently, the conductive layer 86a, the conductive layer 86b, and the conductive layer 86c are formed (FIG. 11(E)). The conductive layers 86a, 86b, and 86c are formed by depositing a conductive film and then using a resist mask. After etching the conductive film, the resist mask is removed. can.

[0208] In this manner, the transistor 80 can be manufactured. A part of 81 functions as a gate, a part of insulating layer 84 functions as a gate insulating layer, and an insulating A portion of layer 82 functions as a gate insulating layer, and a portion of conductive layer 85 functions as a gate. The oxide semiconductor layer 83 has a channel region and a low-resistance region. The channel region is surrounded by an insulating layer 84. The low resistance region overlaps with the conductive layer 85 via the conductive layer 86a. 6b and a portion connected to the

[0209] Next, the insulating layer 34 to the display element 60 are formed on the insulating layer 33. See Example Method 1.

[0210] In addition, similarly to the manufacturing method example 3, a resin layer 93, an insulating layer 95, a colored layer 97, And a light-shielding layer 98 is formed.

[0211] The surface of the fabrication substrate 14 on which the resin layer 23 and the like are formed and the surface of the fabrication substrate 91 on which the resin layer 93 and the like are formed are The surface on which the adhesive layer 99 is formed is bonded to the surface on which the adhesive layer 99 is formed. 12(A) and (B).

[0212] 12(A) and (B) differ only in the configuration of the resin layer 23. 12B shows an example in which the conductive layer 86c has an opening and is in contact with the fabrication substrate 14. The fat layer 23 has a first region and a second region thinner than the first region, and is introduced into the second region. In this example, the conductive layer 86c overlaps the conductive layer 86b.

[0213] The subsequent steps will be explained using the configuration shown in FIG. 12(B) as an example.

[0214] Next, the resin layer 23 is irradiated with laser light through the fabrication substrate 14. 9 shows an example in which the substrate 91 is separated before the substrate 91 is formed.

[0215] Next, the fabrication substrate 14 and the insulating layer 31 are separated (FIG. 13(A)). This shows an example in which separation occurs in the resin layer 23. On the fabrication substrate 14, a part of the resin layer (resin layer 23a) The resin layer 23 remaining on the insulating layer 31 side is thinner than that in FIG. 12(B). In addition, the second region of the resin layer 23 (the region having a smaller thickness than the other regions) is entirely formed on the substrate. 14 side, so that the conductive layer 86c is exposed.

[0216] If the resin layer 23 remains on the conductive layer 86c, it is removed by ashing or the like. Alternatively, even if the resin layer 23 is not removed, the electrical connection between the conductive layer 86c and the FPC can be improved. If connection is possible, the resin layer 23 does not need to be removed.

[0217] Then, the exposed resin layer 23 and the substrate 29 are bonded together using an adhesive layer 28. The plate 29 and adhesive layer 28 are arranged so as not to overlap the conductive layer 86c.

[0218] Next, the resin layer 93 is irradiated with laser light through the fabrication substrate 91. The edge layer 95 is then separated. Then, the exposed resin layer 93 and the substrate 22 are bonded together using the adhesive layer 13. Paste together.

[0219] Then, the conductive layer 86c and the FPC 77 are electrically connected via the connector 76 (FIG. 13( B).

[0220] The connector 76 may be made of various anisotropic conductive films (ACF). Conductive Film) and Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0221] In this embodiment, an example is shown in which a top-emission type light-emitting element is used. Since it is on the display surface side, the conductive layer 86c is exposed from the substrate 22 side and electrically connected to the FPC 77. When using the FPC77, the display area and the FPC77 cannot be overlapped. On the other hand, in one embodiment of the present invention, the resin layer 23 is made of a photosensitive material. As a result, the conductive layer 86c can be exposed from the surface opposite to the display surface. The C77 can be placed over the display area, saving space in electronic devices. be.

[0222] This embodiment mode can be combined with other embodiment modes as appropriate.

[0223] (Embodiment 2) In this embodiment, a flexible device according to one embodiment of the present invention will be described with reference to FIGS. 14 to 19. and explain.

[0224] In this embodiment, an active matrix organic EL display is used as the flexible device. The display device is explained as an example. The display device uses a flexible material for the substrate. In this way, a foldable organic EL display device can be obtained. One embodiment of the present invention is not limited to a light-emitting device or a display device using an organic EL element, but may be a light-emitting device or a display device using other light-emitting elements. Light-emitting devices and display devices using the element or display element, semiconductor devices, input / output devices, etc. It can be applied to various devices.

[0225] One embodiment of the present invention is a resin layer, a transistor on the resin layer, and a semiconductor device electrically connected to the transistor. and a display element configured to display the image.

[0226] In one embodiment of the present invention, an oxide semiconductor is used for a channel formation region of a transistor. As explained in the first aspect, by using an oxide semiconductor, To reduce the maximum temperature in the manufacturing process of a display device and to reduce the manufacturing cost of the display device; Furthermore, the manufacturing process of the display device can be simplified.

[0227] In one embodiment of the present invention, the thickness of the resin layer is 0.1 μm or more and 3 μm or less. By forming the display device, it is possible to manufacture the display device at low cost. Furthermore, the flexibility of the display device can be improved.

[0228] The heat resistance of the resin layer is evaluated, for example, by the weight loss rate due to heating, specifically, the 5% weight loss temperature. In one embodiment of the present invention, the 5% weight loss temperature of the resin layer is 450°C or less, It can be below 400°C or below 350°C.

[0229] In one embodiment of the present invention, a resin layer is formed using a photosensitive material. In this way, a resin layer having a desired shape can be easily formed. For example, a resin layer having an opening can be formed. Alternatively, a resin layer having two or more regions with different thicknesses can be easily formed. This prevents the resin layer from interfering with the fabrication of back gates, external connection terminals, through electrodes, etc. This can prevent this from happening.

[0230] The configuration of a display device according to one embodiment of the present invention will be specifically described below. Regarding materials that can be used for the display device of the above form and a manufacturing method of the display device, See also Form 1.

[0231] [Configuration example 1] 14A shows a top view of the display device. FIG. 14B shows a cross-sectional view of a display portion 381 of the display device. A plan view and a cross-sectional view of the connection part with FPC77 are shown.

[0232] The display device shown in FIGS. 14A and 14B has a pair of substrates (substrate 22 and substrate 29). The substrate 22 side is the display surface side of the display device. The display device includes a display unit 381 and a drive circuit unit 3 82. An FPC 77 is attached to the display device.

[0233] The display device shown in FIG. 14(B) is a top-emission type display device using a color filter. It is a display device made of

[0234] The display device shown in FIG. 14(B) includes a substrate 29, an adhesive layer 28, a resin layer 23, an insulating layer 31, a transistor Transistor 80, conductive layer 86c, insulating layer 33, insulating layer 34, insulating layer 35, display element 60, contact The adhesive layer 99, the colored layer 97, the light-shielding layer 98, the substrate 22, the adhesive layer 13, the resin layer 93, and the insulating layer 9 It has 5.

[0235] The display device shown in FIG. 14B is manufactured by referring to Manufacturing Method Example 3 and Manufacturing Method Example 4 in Embodiment 1. It can be made by

[0236] The display unit 381 includes a transistor 80 .

[0237] The transistor 80 includes a conductive layer 81, an insulating layer 82, an oxide semiconductor layer 83, an insulating layer 84, and a conductive The conductive layer 81 and the conductive layer 85 are electrically connected to each other. The insulating layer 82 and the insulating layer 84 function as gate insulating layers. The conductive layer 81 overlaps with the oxide semiconductor layer 83 via the insulating layer 82. The conductive layer 86a and the conductive layer 86b overlap with the oxide semiconductor layer 83 with the insulating layer 84 interposed therebetween. One of them is electrically connected to the source region of the oxide semiconductor layer 83, and the other is Electrical connection is made to the drain region of layer 83 .

[0238] As described above, in one embodiment of the present invention, an oxide is formed in a channel formation region of a transistor. Since a semiconductor is used, the resin layer 23 does not need to have high heat resistance or a thick film. The resin layer 23 can be made thin, which allows the display device to be manufactured at low cost. Furthermore, it is possible to reduce the weight and thickness of the display device. The same applies to the resin layer 93.

[0239] The thickness of the resin layer 23 and the resin layer 93 is 0.01 μm or more and less than 10 μm. It is preferable that the thickness is 0.1 μm or more and 3 μm or less, more preferably 0.5 μm or more and 1 μm or less. It is more preferable that the thickness is 1 μm or less.

[0240] Impurities such as water or hydrogen diffuse into at least one of the insulating layers 33 and 34. It is preferable to use a material that is difficult to diffuse. Therefore, the reliability of the display device can be improved. 34 functions as a planarizing layer.

[0241] In this embodiment, an example will be shown in which a light-emitting element is used as the display element 60. The display element 60 is a conductive The display element 60 includes an electroluminescent layer 61, an EL layer 62, and a conductive layer 63. The display element 60 emits light toward the colored layer 97. Inject.

[0242] By arranging the transistor, the capacitor, the wiring, and the like so as to overlap with the light-emitting region of the light-emitting element, The aperture ratio of the display section 381 can be increased.

[0243] One of the conductive layer 61 and the conductive layer 63 functions as an anode, and the other functions as a cathode. When a voltage higher than the threshold voltage of the light-emitting element is applied between the conductive layer 61 and the conductive layer 63, Holes are injected into the EL layer 62 from the anode side, and electrons are injected from the cathode side. The electrons and holes recombine in the EL layer 62, causing the luminescent material contained in the EL layer 62 to emit light.

[0244] The conductive layer 61 is electrically connected to the source or drain of the transistor 80. The conductive layer 61 is connected to the pixel electrode 62 directly or via another conductive layer. The adjacent two conductive layers 61 are separated by the insulating layer 35. It is electrically insulated.

[0245] The EL layer 62 is a layer containing a light-emitting material. An organic EL element using such a material is preferred.

[0246] The EL layer 62 has at least one light-emitting layer. The EL layer 62 includes the following layers other than the light-emitting layer: Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties a material with high electron injection properties, or a bipolar material (with high electron transport and hole transport properties) It may further have a layer containing a thin film (a thin film material) or the like.

[0247] The EL layer 62 can be made of either a low molecular weight compound or a high molecular weight compound. It may also contain a mixture.

[0248] The conductive layer 63 functions as a common electrode and is provided across a plurality of light-emitting elements. Layer 63 is supplied with a constant potential.

[0249] Here, the display element 60 is preferably located within 10 μm from the neutral plane, and more preferably within 5 μm. It is more preferable that the distance be within 2.5 μm, and even more preferable that the distance be within 2.5 μm.

[0250] When an EL element is used as the display element 60, there are portions of the display element 60 that have low adhesion. By disposing the display element 60 at a position close to the neutral plane, The stress generated by the film can be reduced in the peeling process in the manufacturing process of the display device and in the process of the display device. This can prevent the film from peeling off when the device is bent during use.

[0251] The display element 60 overlaps the colored layer 97 via the adhesive layer 99. The insulating layer 35 The light-shielding layer 98 overlaps the light-shielding layer 98 through the gap.

[0252] The colored layer 97 is a colored layer that transmits light in a specific wavelength range. For example, red, green, blue, or A color filter that transmits light in the yellow wavelength range or the yellow wavelength range can be used. Materials that can be used include metal materials, resin materials, pigments, and dyes. Examples of resin materials include:

[0253] Note that one embodiment of the present invention is not limited to the color filter method, but may be a color-coded method, a color conversion method, Alternatively, a quantum dot method or the like may be applied.

[0254] The light-shielding layer 98 is provided between the adjacent colored layers 97. The light-shielding layer 98 is provided between the adjacent light-emitting elements. The color layer 97 blocks light from the adjacent light-emitting elements and suppresses color mixing between the adjacent light-emitting elements. By providing the end portions so as to overlap the light-shielding layer 98, it is possible to suppress light leakage. The light-shielding layer 98 can be made of a material that blocks light from the light-emitting element, such as a metal material, Alternatively, a black matrix may be formed using a resin material containing a pigment or a dye. The light-shielding layer 98 is provided in an area other than the display section 381, such as the driving circuit section 382. This is preferable because it can suppress unintended light leakage due to guided light or the like.

[0255] The resin layer 23 and the substrate 29 are bonded together by an adhesive layer 28. The plates 22 are bonded together by an adhesive layer 13 .

[0256] It is preferable to use a film with high moisture resistance for the insulating layer 95 and the insulating layer 31. By disposing the display element 60 and the transistor 80 between the insulating layers, This is preferable because it can prevent impurities such as water from entering and improve the reliability of the display device.

[0257] Highly moisture-proof insulating films include silicon nitride films and silicon nitride oxide films containing nitrogen and silicon. and films containing nitrogen and aluminum, such as aluminum nitride films. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0258] For example, the water vapor permeability of a highly moisture-proof insulating film is 1×10 -5 [g / (m 2 ·day)] Less than 1 × 10 -6 [g / (m 2 ·day)] or less, more preferably 1 × 10 -7 [g / (m 2 ·day)] or less, more preferably 1 × 10 -8 [g / (m 2 ·da y)] or less.

[0259] The conductive layer 86c is formed using the same material and in the same process as the conductive layer of the transistor. For example, the conductive layer 86c can be made of the same material as the conductive layers 86a and 86b. The conductive layer 86c can be formed in the same process. It is electrically connected to an external input terminal that transmits a signal or potential. The FPC 77 and the conductive layer 86c are connected via the connector 76. Make an electrical connection.

[0260] As described above, the resin layer 23 can be formed using a photosensitive material. The conductive layer 86c and the FPC 77 can be electrically connected through an opening provided in the adhesive layer 23. This configuration allows the FPC77 to be placed on the opposite side of the display surface. Therefore, when incorporating a display device into an electronic device, the FPC77 needs to be bent. This can save space and make it possible to realize a more compact electronic device.

[0261] Note that the display device of one embodiment of the present invention is not limited to the structure shown in FIG. FIG. 1E shows a top view of a display device having a pair of substrates (substrate 22 and substrate 29). The display device has one display unit 381 and one or more drive circuit units 382. The FPC 77 is connected to an external connection electrode (not shown) on the substrate 29. ) is electrically connected to

[0262] The display device shown in FIG. 15A has a driver circuit portion 382 on one side. The display device is similar to the display device shown in FIG. 14(A) in that the FPC 77 is attached to the display surface side. It is different from the device.

[0263] The display device shown in FIG. 15B has a driver circuit portion 382 on one side. In the display device, the drive circuit section 382 is arranged along the short side of the display section 381. In the display device shown in FIG. 15B, a driver circuit section 382 is arranged along the long side of a display section 381. It has been done.

[0264] The display devices shown in FIGS. 15C and 15D each have a driver circuit portion 382 on two sides. In FIG. 15(C), drive circuit sections 382 are provided along two opposing sides. In D), the driving circuit section 382 is provided along the short side of the display device, and the driving circuit section 383 is provided along the long side. and a drive circuit section 382.

[0265] FIG. 15(E) shows an example of a display device in which the display portion 381 has a circular top surface. The shape of the top surface of 81 is not limited to a polygon, but may be a circle, an ellipse, or any other shape.

[0266] Furthermore, the display device is not limited to a polygonal shape, and may have various top surface shapes such as a circular or elliptical shape. The top surface shape of the display device in FIG. 15(E) has both curved and straight portions. do.

[0267] [Configuration example 2] 16(A), (B), 17 and 18 show display sections of display devices different from that shown in FIG. 14(B). 381. In the following configuration examples, the same components as in configuration example 1 will not be explained. In Figure 17, a cross-sectional view of the connection with FPC77 is also shown.

[0268] The display devices shown in FIGS. 16(A), 16(B), 17 and 18 each include a color filter. This is a display device with a top emission structure to which this method is applied.

[0269] The display device shown in FIGS. 16(A) and 16(B) includes a substrate 29, an adhesive layer 28, a resin layer 23, an insulating layer 2 4, resin layer 25, insulating layer 31, transistor 80, insulating layer 33, insulating layer 34, insulating layer 35 , display element 60, adhesive layer 99, colored layer 97, light-shielding layer 98, substrate 22, adhesive layer 13, resin layer 93 and an insulating layer 95.

[0270] The display device shown in FIGS. 16A and 16B has the structure shown in FIG. 14B, and further includes an insulating layer 24 and a resin layer. This is a configuration that adds 25.

[0271] In addition, in FIG. 16B, the conductive layer 81 functioning as the gate of the transistor 80 is formed of an insulating It is located between the layer 24 and the resin layer 25 .

[0272] The resin layer 25 is made of a photosensitive material. By using a photosensitive material, it is possible to form a desired shape. Therefore, an opening is provided in the resin layer 25, and the resin layer 25 can be easily formed. Through this opening, the conductive layer 81 can be connected to other conductive layers.

[0273] Since an oxide semiconductor is used in the channel formation region of the transistor, the resin layer 25 has high resistance. Therefore, the resin layer 25 can be made thin. This allows the electric field of the conductive layer 81 to be effectively applied to the oxide semiconductor layer 83. The electric field for inducing a channel by the conductive layer 81 and the conductive layer 85 is effectively applied to the oxide semiconductor. Since the voltage can be applied to the dielectric layer 83, the current driving capability of the transistor 80 is improved, and a high It is possible to obtain the on-current characteristics.

[0274] If the resin layer 25 has a planarizing function, the step due to the conductive layer 81 is planarized, so that the step can be easily formed in the subsequent process. This is preferable because it makes film formation easier.

[0275] Compared to the case where the resin layer 23 and the resin layer 25 are provided in contact with each other, by providing the insulating layer 24 therebetween, It may be possible to improve adhesion.

[0276] The display device shown in FIG. 17 includes a substrate 29, an adhesive layer 28, a resin layer 23, a resin layer 25, a transistor, and a 80, conductive layer 81a, conductive layer 86c, insulating layer 33, insulating layer 34, insulating layer 35, display element 60, adhesive layer 99, colored layer 97, light-shielding layer 98, substrate 22, adhesive layer 13, resin layer 93, and It has an insulating layer 95 .

[0277] The display device shown in FIG. 17 is configured by removing the insulating layer 31 from the configuration of FIG. 14(B) and adding the resin layer 25. This is the configuration.

[0278] 17, the conductive layer 81 functioning as the gate of the transistor 80 is formed on the resin layer 23. and the resin layer 25.

[0279] In the manufacturing process of the display device, when processing the conductive film that will become the conductive layer 81, If the resin layer 23 is not a uniform film, or if the resin layer 23 If a large opening is formed in the substrate, the yield of the peeling of the substrate may decrease. In the display device shown in FIG. 17, the resin layer 25 is in contact with the resin layer 23 and the conductive layer 81. Therefore, in the portion where the resin layer 23 is removed, the resin layer 25 is used to prevent peeling from the substrate. Therefore, the yield of manufacturing the display device can be increased.

[0280] The conductive layer 81a and the conductive layer 86c are made of the same material and have the same structure as the conductive layers included in the transistor. For example, the conductive layer 81a can be formed using the same material and the same process as the conductive layer 81. The FPC 77 and the FPC 78 are connected via the conductive layer 81a and the connector 76. The conductive layer 86c provides electrical connection.

[0281] The display device shown in FIG. 18 includes a substrate 29, an adhesive layer 28, a resin layer 23, an insulating layer 24, and a resin layer 25. , insulating layer 26, transistor 80, insulating layer 33, insulating layer 34, insulating layer 35, display element 60 , adhesive layer 99, colored layer 97, light-shielding layer 98, substrate 22, adhesive layer 13, resin layer 93, and insulating It has a layer 95.

[0282] The display device shown in FIG. 18 has a configuration in which an insulating layer 26 is added to the configuration of FIG. 16(B).

[0283] In FIG. 18, the conductive layer 81 is surrounded by the insulating layer 24 and the insulating layer 26. For example, the conductive layer 8 When copper or the like is used for the first electrode 1, it is necessary to surround it with insulating layers 24 and 26 to prevent oxidation. As the insulating layer 24 and the insulating layer 26, for example, a silicon nitride film is suitable. do.

[0284] [Configuration example 3] 19(A) and (B) show cross-sectional views of a display portion 381 of the display device. A cross-sectional view of the operating circuit section 382 and a cross-sectional view of the connection section with the FPC 77 are also shown.

[0285] The display device shown in FIG. 19(A) is a display device to which a color-coded method is applied, and It can be a cushion structure, a top emission structure, or a dual emission structure. The display device shown in FIG. 19(B) is a bottom-emitting display device to which a color filter system is applied. It is a display device with a motion structure.

[0286] The display device shown in FIG. 19(A) includes a substrate 29, an adhesive layer 28, a resin layer 23, an insulating layer 31, a transistor a transistor 40, an insulating layer 33, an insulating layer 34, an insulating layer 35, a display element 60, an insulating layer 74, and It has a protective layer 75 .

[0287] The display device shown in FIG. 19A is manufactured by the method shown in Manufacturing Method Example 1 or 2 in Embodiment 1. It can be made by

[0288] The transistor 40 includes a conductive layer 41, an insulating layer 32, an oxide semiconductor layer 44, a conductive layer 43a, and The conductive layer 41 functions as a gate. The insulating layer 32 functions as a gate. The conductive layer 41 overlaps with the oxide semiconductor layer 44 via the insulating layer 32. The conductive layer 43a and the conductive layer 43b are connected to the oxide semiconductor layer 44. One of the conductive layers 43b functions as a source, and the other functions as a drain.

[0289] The insulating layer 74 functions as a protective layer that prevents impurities such as water from diffusing into the display element 60. The display element 60 is sealed by an insulating layer 74.

[0290] The protective layer 75 can be used as a layer located on the outermost surface of the display device. The protective layer 75 preferably has high transparency to visible light. Materials that can be used in this way can be applied.

[0291] The display device shown in FIG. 19(B) includes a substrate 29, an adhesive layer 28, a resin layer 23, an insulating layer 31, a transistor Transistor 40, transistor 50, conductive layer 86c, conductive layer 78, insulating layer 33, insulating layer 34 , an insulating layer 35, a display element 60, an adhesive layer 75b, a substrate 75a, and a coloring layer 97.

[0292] In FIG. 19B, the transistor 40 and the transistor 50 are the same as those shown in FIG. 19A. In addition to the configuration of the transistor 40, an example is shown in which a conductive layer 45 that functions as a gate is provided.

[0293] The display element 60 emits light toward the colored layer 97 side.

[0294] The conductive layer 78 can be formed using the same material and in the same process as the conductive layer 61. The FPC 77 and the conductive layer 86c are electrically connected via the connector 78 and the connector 76.

[0295] As shown in FIG. 19(B), the conductive layer 86c is electrically connected to the FPC 77 through the opening in the resin layer 23. The conductive layer 86c is connected to the insulating layer 33, the insulating layer 34, and the insulating layer 35. It is electrically connected to the FPC 77 through the opening 35.

[0296] As described in this embodiment, in a flexible device according to one embodiment of the present invention, an oxide semiconductor Since conductors are used in transistors, the manufacturing process of transistors can be carried out at low temperatures. In addition, the resin layer can be a thin layer with low heat resistance. This allows for a lighter and thinner display device, and also increases the flexibility of the display device. This can sometimes prevent the flexible device from warping due to the thickness of the resin layer.

[0297] This embodiment mode can be combined with other embodiment modes as appropriate.

[0298] (Embodiment 3) In this embodiment, a display module and an electronic device of one embodiment of the present invention will be described with reference to FIGS. This will be explained using FIG.

[0299] The display module 8000 shown in FIG. 20 is made up of an upper cover 8001 and a lower cover 8002. In between, touch panel 8004 connected to FPC8003, and touch panel 8005 connected to FPC8005 A display panel 8006, a frame 8009, a printed circuit board 8010, and a battery 8011 It has.

[0300] The display device of one embodiment of the present invention can be used for the display panel 8006, for example.

[0301] The upper cover 8001 and the lower cover 8002 are connected to the touch panel 8004 and the display panel 8005. The shape and dimensions can be changed appropriately to match the size of 006.

[0302] The touch panel 8004 is a resistive or capacitive touch panel. It can be used by superimposing it on the panel 8006. The display panel 8006 can also be provided with a touch panel function.

[0303] The frame 8009 protects the display panel 8006 and also prevents the operation of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the frame. The frame 8009 may also function as a heat sink.

[0304] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal and a clock signal. The power supply to the power supply circuit can be an external commercial power supply or Alternatively, the power source may be a separately provided battery 8011. This can be omitted if a commercial power source is used.

[0305] In addition, the Display Module 8000 adds components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided as follows.

[0306] According to one embodiment of the present invention, an electronic device having a curved surface and high reliability can be manufactured. According to one embodiment, a flexible and highly reliable electronic device can be manufactured.

[0307] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital cameras, digital video cameras Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, sound reproduction Examples include large gaming machines such as pachinko machines.

[0308] The electronic device according to one embodiment of the present invention is a device for attaching a light source to an inner or outer wall of a house or building, or to an automobile. It can be incorporated along the curved surfaces of interior or exterior surfaces.

[0309] The electronic device of one embodiment of the present invention may include a secondary battery and may be powered by wireless power transmission. It is preferable to be able to charge the secondary battery.

[0310] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include nickel-zinc batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, and silver-zinc batteries. .

[0311] The electronic device according to one embodiment of the present invention may include an antenna. This allows the display of images and information on the display unit. In the case where the device has a secondary battery, the antenna may be used for contactless power transmission.

[0312] The electronic device according to one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, etc.). , distance, light, liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared radiation) It may be possible.

[0313] The electronic device according to one embodiment of the present invention can have various functions. Still images, videos, text images, etc.) on the display, touch panel function, calendar It has the functions of displaying the date, time, etc., and running various software (programs). functions, wireless communication functions, and functions to read programs or data recorded on recording media. They may have abilities, etc.

[0314] Furthermore, in an electronic device having a plurality of display units, one of the display units is used mainly for displaying image information. The function of displaying text information on one display and text information on another display, or displaying text information on multiple displays. By displaying an image that takes the difference into consideration, it is possible to have a function for displaying a three-dimensional image, etc. Furthermore, in electronic devices having an image receiving unit, there is a function to take still or moving images, The function to automatically or manually correct the captured image, and to save the captured image to a recording medium (external or electronic) It can have functions such as saving the captured image to a memory card (built into the device) and displaying the captured image on the display unit. Note that the functions of the electronic device of one embodiment of the present invention are not limited to those described above, and various functions can be implemented. It can have.

[0315] 21(A) to 21(C) show an example of an electronic device having a curved display portion 7000. The display surface of the unit 7000 is curved, and the display can be performed along the curved display surface. The display unit 7000 may be flexible.

[0316] The display portion 7000 is manufactured using a display device according to one embodiment of the present invention. This makes it possible to provide an electronic device that has a curved display and is highly reliable.

[0317] An example of a mobile phone is shown in FIG. 21A. A mobile phone 7110 shown in FIG. 21A has a housing. Body 7101, display unit 7000, operation buttons 7103, external connection port 7104, speaker 7105, a microphone 7106, a camera 7107, etc.

[0318] The mobile phone 7110 has a touch sensor on the display unit 7000. All operations, such as entering text, can be performed by touching the display 7000 with a finger or a stylus. This can be done with:

[0319] In addition, by operating the operation button 7103, the power can be turned on and off, and the display unit 7000 can be You can change the type of image displayed. For example, from the email creation screen, you can change the main image. You can switch to the menu screen.

[0320] In addition, a detection device such as a gyro sensor or an acceleration sensor may be provided inside the mobile phone. Then, the orientation of the mobile phone (portrait or landscape) is determined and the orientation of the screen display of the display unit 7000 is automatically adjusted. The orientation of the screen display can be switched automatically. Touching 000, operating the operation button 7103, or inputting voice using the microphone 7106 It can also be done by force or the like.

[0321] An example of a portable information terminal is shown in FIG. 21(B). The portable information terminal 7210 shown in FIG. 21(B) is The device has a housing 7201 and a display portion 7000. It also has operation buttons, an external connection port, a switch, and The display unit 70 may include a speaker, a microphone, an antenna, a camera, a battery, or the like. The mobile information terminal is operated by touching the display 7 with a finger or a stylus. This can be done by touching 000.

[0322] The portable information terminal exemplified in this embodiment may be, for example, a telephone, a notebook, an information viewing device, or the like. Specifically, each smartphone has one or more functions selected from the following: The portable information terminal exemplified in this embodiment may be, for example, a mobile phone, an electronic Email, viewing and writing text, playing music, internet communication, computer games, etc. A variety of applications can be executed.

[0323] The portable information terminal 7210 can display text and image information on multiple surfaces. For example, three operation buttons 7202 are displayed on one side, and information 7203 shown as a rectangle is displayed on the other side. In FIG. 21B, the operation button 7202 is displayed on the mobile information terminal 7210, and information 7203 is displayed on the side of the mobile information terminal 7210. For example, an operation button 7202 is displayed on the side of the portable information terminal 7210, and Information 7203 may be displayed on the top of the information terminal 7210. Information may be displayed on three or more sides.

[0324] An example of Information 7203 is a notification from a social networking service (SNS). , display notifying you of incoming e-mails or phone calls, subject of e-mails or sender name , date and time, remaining battery level, antenna reception strength, etc. Instead of information, operation buttons, icons, etc. may be displayed in the location where is displayed. .

[0325] FIG. 21C shows an example of a television device. The television device 7300 includes a housing 73 The display unit 7000 is built into the housing 7301. This shows a configuration that supports 01.

[0326] The television set 7300 shown in FIG. 21C is operated by an operation switch provided in the housing 7301. This can be done by a separate remote control 7311 or the display unit 700. The display unit 7000 may be provided with a touch sensor, and the operation may be performed by touching the display unit 7000 with a finger or the like. The remote control unit 7311 displays the information output from the remote control unit 7311. The remote control 7311 may have an operation key or a touch panel. The panel allows the user to operate the channel and volume, and the information displayed on the display unit 7000 You can control the video.

[0327] The television device 7300 includes a receiver, a modem, and the like. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be transmitted in one direction (sender to receiver) or two directions. It is also possible to communicate information in two directions (between a sender and a receiver, or between receivers). do.

[0328] 21(D) to (F) show a mobile phone having a flexible and bendable display unit 7001. 1 shows an example of a portable information terminal.

[0329] The display portion 7001 is manufactured using a display device of one embodiment of the present invention. Display devices that can be bent between 0.01 mm and 150 mm can be used. The display unit 7001 may be provided with a touch sensor, and when the display unit 7001 is touched with a finger or the like, According to one embodiment of the present invention, a flexible display unit can be provided. It is possible to provide a highly reliable electronic device.

[0330] FIG. 21D shows an example of a wristwatch-type portable information terminal. 7801, a display unit 7001, an input / output terminal 7802, an operation button 7803, etc. The housing 7801 functions as a housing. The battery 7805 can be mounted on the display unit 700. 1 or band 7801, etc.

[0331] The band 7801, the display portion 7001, and the battery 7805 are flexible. The portable information terminal 7800 can be easily bent into a desired shape.

[0332] The operation button 7803 is used to set the time, turn the power on and off, and turn wireless communication on and off. It has various functions such as operation, silent mode activation and deactivation, power saving mode activation and deactivation, etc. For example, an operating system installed in the portable information terminal 7800 can The function of the operation button 7803 can also be freely set using the stem.

[0333] In addition, by touching an icon 7804 displayed on the display unit 7001 with a finger or the like, the application You can launch the application.

[0334] The mobile information terminal 7800 is capable of performing short-distance wireless communication in accordance with a communication standard. For example, by communicating with a wireless headset, hands-free operation is possible. You can also make calls using the phone.

[0335] The portable information terminal 7800 may also have an input / output terminal 7802. If you have a 02, you can exchange data directly with other information terminals via a connector. Charging can also be performed via the input / output terminal 7802. The charging operation of the mobile information terminal shown in is performed by non-contact power transmission without using input / output terminals. That's fine.

[0336] 21(E) and (F) show an example of a foldable mobile information terminal. 21(F) shows the state where the display unit 7001 is folded inward. The mobile information terminal 7650 is folded so that the 001 is facing outward. The mobile information terminal 7650 has a display portion 7001 and a non-display portion 7651. When not in use, the display unit 7001 can be folded inward. In addition, in Fig. 21(E) and (F), the mobile information terminal 7650 is Although a two-fold configuration is shown, the portable information terminal 7650 may be folded into three. The portable information terminal 7650 may be folded into four or more pieces. The device may have a power supply, a speaker, a microphone, an antenna, a camera, a battery, etc.

[0337] This embodiment mode can be combined with other embodiment modes as appropriate. [Example]

[0338] In this example, a manufacturing substrate was peeled from a processed member using a peeling method according to one embodiment of the present invention. This article explains:

[0339] 22 shows a schematic cross-sectional view of the processed member 500. The materials used for the processed member 500 are as follows: In the processed member 500, it is assumed that the transistor and the substrate are separated. The oxide semiconductor layer used as a semiconductor layer of the transistor and the insulating layer used as a gate insulating layer are A border layer is formed on the resin layer.

[0340] A glass substrate with a thickness of about 0.7 mm was used as the substrate 111. The insulating layer 116 was a polyimide resin film with a thickness of about 2 μm. a silicon oxynitride film 116a having a thickness of about 0.00 nm, a silicon nitride film 116b having a thickness of about 400 nm, and a silicon oxynitride film 116c having a thickness of about 50 nm. The insulating layer 115 was an In-Ga-Zn oxide film having a thickness of about 40 nm. The adhesive layer 132 was a silicon oxynitride film having a thickness of about 150 nm. A thermosetting epoxy resin having a thickness of about 5 μm was used. A film with a thickness of about 100 μm was used as the protective film 156. there was.

[0341] The polyimide resin was prepared using a photosensitive and thermosetting material with a viscosity of approximately 30 cP. An oily film was formed.

[0342] Next, a process of peeling off the production substrate 111 from the processed member 500 will be described.

[0343] The processed member 500 was irradiated with laser light from the side of the substrate 111. The entire surface of the processed member 500 was irradiated with the light. A light-shielding mask was provided.

[0344] A XeCl excimer laser with a wavelength of 308 nm was used as the laser oscillator for the laser light. The oscillator energy was set to 980 mJ, the repetition rate was 60 Hz, and the scan speed was 11. The cross section of the laser beam was adjusted to 0.6 mm x 300 mm by adjusting the optical system. The beam was shaped into a linear shape. An attenuator was also used in the optical system. The energy decay rate was set to 10%.

[0345] After the laser beam irradiation, the workpiece 500 is cut from the protective film 156 side toward the inside of the outer periphery. The substrate 111 was peeled off from the processed member 500 by making a cut with a cutter.

[0346] FIG. 23(A) shows the processed member 500 after the fabrication substrate 111 has been peeled off, and the peeled fabrication substrate 111. 23(B) shows a cross section of the surface of the peeled substrate 111. As shown in FIG. 23(B), a layer of approximately 50 nm thick was formed on the peeled substrate 111. It can be seen that the resin layer 112 remains.

[0347] 23A and 23B, the boundary between the formation substrate and the resin layer is clearly visible by the peeling method according to one embodiment of the present invention. It was confirmed that the fabricated substrate could be peeled off at the interface near the boundary. [Example]

[0348] In this example, the purpose of investigating the water release from the polyimide resin layer used in one embodiment of the present invention was to Thermal Desorption Spectroscopy (TDS) of Samples Prepared for Purposes The results of the n Spectroscopy analysis will be explained.

[0349] The samples used for TDS analysis are samples A1, A2, A3, B1, and B2, whose preparation methods are explained below. There are nine: 2, B3, C1, C2, and C3.

[0350] First, for all nine samples, a polyimide film with a thickness of approximately 1.55 μm was deposited on a glass substrate 811. The resin layer 812 was formed. The polyimide resin layer 812 was formed in a nitrogen atmosphere for 1 hour. The heat treatment temperature differed for each sample as follows: Samples A1, B1, and C1 were heated at 350°C, and samples A2, B2, and C2 were heated at 400°C. The samples A3, B3, and C3 were heat-treated at 450°C.

[0351] Next, in the samples B1 to B3 and the samples C1 to C3, the polyimide resin layer 81 A silicon oxynitride film 813a having a thickness of about 200 nm was formed on the substrate 2. In the sample C3, a silicon nitride film having a thickness of about 400 nm was formed on the silicon oxynitride film 813a. A silicon oxynitride film 813b and a silicon oxynitride film 813c having a thickness of about 50 nm were formed in this order.

[0352] Schematic cross-sectional views of the nine samples prepared as described above are shown in FIGS. 24(A) to 24(C).

[0353] The results of TDS analysis of the above nine samples are shown in Figures 25(A) to 25(C). 5(A) shows the results of samples A1 to A3, FIG. 25(B) shows the results of samples B1 to B3, and FIG. C) shows the results of TDS analysis of samples C1 to C3. The amount of emission of a molecule with a mass-to-charge ratio of M / z=18, which corresponds to a water molecule, was measured. The horizontal axis represents the substrate heating temperature [°C], and the vertical axis is proportional to the emission amount of M / z=18. Take strength.

[0354] From FIG. 25(A), it can be seen that the heating temperature during the formation of the polyimide resin layer 812 is set to 400° C. or higher. For example, when the manufacturing temperature of a transistor using an oxide semiconductor is set to 350° C. In addition, from Figures 25(B) and (C), it can be seen that the release of water can be suppressed. In the configuration in which an inorganic film is provided on the imide resin layer 812, the processing at the time of forming the polyimide resin layer 812 It was found that by setting the heat temperature to 400°C or higher, the release of moisture up to 400°C can be suppressed. do.

[0355] From the results of this example, it is considered that the heating temperature during the formation of the polyimide resin layer is set to 400° C. or higher. Therefore, when a transistor using an oxide semiconductor is formed on a polyimide resin layer, It was confirmed that the release of moisture from the polyimide resin layer could be suppressed. It is suggested that this can suppress the fluctuation in transistor characteristics caused by the release of water from the polyimide resin layer. Ta. [Example]

[0356] In this example, a transistor formed on a substrate via a resin layer was The results of comparing the electrical properties before and after peeling are explained below. This is the same as the method described in Example 1.

[0357] The structure of the transistor manufactured in this example is the same as that of the transistor 80 shown in FIG. 12(A) and the like. It seems that

[0358] A glass substrate with a thickness of about 0.7 mm was used as the substrate 14. The resin layer 23 was The insulating layer 31 was a polyimide resin film having a thickness of about 1.55 μm. A silicon oxynitride film with a thickness of 1000 nm was used. The layer 81 was a titanium film with a thickness of about 100 nm. A stack of a 00 nm thick silicon nitride film and a 50 nm thick silicon oxynitride film was used. The oxide semiconductor layer 83 is made of an oxide target having an atomic ratio of In:Ga:Zn=4:2:3. The insulating layer was an In-Ga-Zn oxide semiconductor film with a thickness of approximately 40 nm, formed using a SiO2 film. The gate electrode 84 is a silicon oxynitride film with a thickness of about 150 nm. The conductive layer 85 functioning as an electrode is made of an oxide having an atomic ratio of In:Ga:Zn=4:2:3. The In-Ga-Zn oxide film was formed using an In-Ga-Zn oxide target with a thickness of approximately 100 nm. The insulating layer 33 is made of a silicon nitride film having a thickness of about 100 nm and an oxide film having a thickness of about 300 nm. The conductive layers 86a and 86b were made of a titanium film having a thickness of about 10 nm. The insulating layer 34 was an aluminum film with a thickness of about 1.5 μm and a copper film with a thickness of about 100 nm. A acrylic resin film was used.

[0359] For the above transistor, I d -V g Measure the characteristics (drain current - gate voltage characteristics) The measurement conditions were different before and after peeling the substrate as follows: Before peeling, I d -V g The characteristics were measured with a drain voltage of 0.1V or 20V, and the back gate voltage and The gate voltage was swept from -8V to 8V in 0.25V steps. , I d -V g The characteristics were measured with a drain voltage of 0.1V or 10V and a back gate voltage of The voltage and gate voltage were swept from -8 V to 8 V in 0.25 V steps.

[0360] I d -V g The measurement results of the characteristics are shown in Figures 26 and 27. Figures 26(A) and 26(B) show ,Before and after peeling of a transistor with a channel length L of 3 μm and a channel width W of 50 μm 27(A) and (B) show the measurement results for the channel length L of 6 μm and the channel length L of 1 μm. The figures show the measurement results for a transistor with a width W of 50 μm before and after peeling. 7, the horizontal axis shows the gate voltage V g [V], the left vertical axis is the drain current I d [A], right vertical The field-effect mobility μ FE [cm 2 / Vs]. Also, in Figures 26 and 27, The thick solid line shows the I d -V g The thick dashed line indicates the characteristics. With an input voltage of 0.1V, d -V g The thin dashed lines show the characteristics when the drain voltage is 10V or 20V. Field-effect mobility μ FE The transistors measured before and after peeling are also shown. The transistors are different transistors formed on the same resin layer 23 .

[0361] As shown in Figures 26 and 27, before and after peeling the fabricated substrate from the resin layer, It was confirmed that there was almost no difference in the electrical characteristics of the formed transistors.

[0362] As described above, according to this example, by using the peeling method of one embodiment of the present invention, a film provided on a resin layer The substrate can be peeled off from the resin layer with almost no effect on the electrical characteristics of the transistor. It has been shown that it can be done. [Example]

[0363] The following describes in detail the items shown in Table 1 in the peeling method according to one embodiment of the present invention.

[0364] [Table 1]

[0365] As shown in Example 1, special treatment (such as plasma treatment) of the fabricated substrate is not required. As the material for the resin layer, a material having photosensitivity and containing a polyimide resin precursor is suitable. Alternatively, the resin layer is preferably made of a non-photosensitive material containing a soluble polyimide resin. The preferred heating conditions for forming the resin layer are baking at 350°C in an N2 atmosphere. It is suitable.

[0366] When the resin layer material is applied, uneven application occurs on the outer periphery of the substrate. It is preferable that such unnecessary portions can be easily removed before the resin layer is cured. For example, it can be removed using an organic solvent such as thinner. Depending on the type of paint, it may react with the thinner and become cloudy, gel, or solidify. The resin layer material used in Example 1 is soluble in organic solvents such as thinner, so the hardness of the resin layer Unwanted parts can be easily removed before curing.

[0367] The use of a photosensitive material is preferable because it makes it easier to process the resin layer. The resin layer can be processed by performing exposure and development. Since the above is unnecessary, the manufacturing process can be shortened.

[0368] When using a non-photosensitive material, the material is applied and hardened by heating, and then a resist is applied to the resin layer. A resist mask is formed by applying a resist, exposing it to light, and developing it. By performing chipping, the resin layer can be processed.

[0369] The process of forming a peelable layer (transistor, display element, etc.) on the resin layer and laminating it to the substrate During the alignment process, it is preferable that the manufacturing device can easily read the alignment marker. In contrast to photosensitive materials, non-photosensitive materials may be more transparent to visible light. The resin layer has a higher transmittance of visible light than the resin layer, making it easier to recognize markers. This gives you more freedom to throw out, which is desirable.

[0370] When the resin layer is removed after peeling, the through electrodes can be exposed. When ashing, dry etching, etc. are used, the resin The shape of the opening in the layer is nearly vertical. , and is not affected by the color of the resin layer.

[0371] When the resin layer is not removed after peeling, it is preferable to expose the through electrodes by peeling. When forming the layer, an opening is made in the resin layer, and a through electrode is formed in the opening. When using the above method, openings can be formed in the resin layer by exposure technology. When a non-photosensitive material is used, a resist mask is used. In this case, the openings are formed in a nearly vertical shape. The resin layer and the through electrode are then exposed by peeling. It is preferable to use a material that has low adhesion to the substrate. The smaller the area, the better. Since the resin layer is not removed, the finished device will have the same color as the resin layer. When using colored resin, it is necessary to reduce the decrease in light extraction efficiency. It is preferable not to provide a resin layer in unnecessary areas. If used, the light extraction efficiency is less likely to decrease even if the resin layer remains, which is preferable.

[0372] The ease of peeling is equally good in both cases. [Explanation of symbols]

[0373] 10 Display device 13 Adhesive layer 14 Fabrication substrate 21 Membrane 22 PCB 23 Resin layer 23a Resin layer 24 insulating layer 25 Resin layer 26 Insulating layer 28 Adhesive layer 29 Circuit Board 31 Insulating layer 32 Insulating layer 33 Insulating layer 34 Insulating layer 35 Insulating layer 40 transistors 41 Conductive layer 43a Conductive layer 43b Conductive layer 44 Oxide semiconductor layer 45 Conductive layer 50 transistors 60 Display element 61 Conductive layer 62 EL layer 63 Conductive Layer 65 Laser light 71 Protective layer 72 Tape 73 Support substrate 74 Insulating layer 75 Protective layer 75a board 75b Adhesive layer 76 Connectors 77 FPC 78 Conductive Layer 80 transistors 81 Conductive layer 81a Conductive layer 82 Insulating layer 83 Oxide semiconductor layer 84 Insulating layer 85 Conductive Layer 86a Conductive layer 86b Conductive layer 86c Conductive layer 91 Fabricated board 93 Resin layer 93a Resin layer 95 Insulating layer 97 Colored layer 98 Light blocking layer 99 Adhesive layer 100 Flexible Devices 110 Laminate 111 Fabrication substrate 112 Resin layer 112a Resin layer 113 Insulating layer 114 Layer containing transistors 114a Oxide semiconductor layer 115 Insulating layer 116 Insulating Layer 116a Silicon oxynitride film 116b Silicon nitride film 116c Silicon oxynitride film 120 laminate 121 Fabrication substrate 122 Resin layer 122a Resin layer 123 Insulating Layer 124 Functional Layer 131 Display element 132 Adhesive layer 141 Circuit Board 151 PCB 155 Flexible substrate 156 Protective Film 160 Laser Light 381 Display section 500 processed parts 811 Glass substrate 812 Polyimide resin layer 813a Silicon oxynitride film 813b Silicon nitride film 813c Silicon oxynitride film 7000 Display 7001 Display section 7101 Housing 7103 Operation button 7104 External connection port 7105 Speaker 7106 Microphone 7107 Camera 7110 Mobile phone 7201 Case 7202 Operation button 7203 Information 7210 Mobile Information Terminal 7300 Television equipment 7301 Housing 7303 Stand 7311 Remote control device 7650 Personal Digital Assistant 7651 Hidden part 7800 Mobile Information Terminal 7801 band 7802 Input / output terminal 7803 Operation button 7804 Icons 7805 Battery 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

1. an adhesive layer on the substrate; a first resin layer on the adhesive layer; a first insulating layer containing silicon on the first resin layer; a second resin layer on the first insulating layer; a second insulating layer including a first silicon oxide film on the second resin layer; a first gate electrode on the second insulating layer; a first gate insulating layer on the first gate electrode; an oxide semiconductor layer containing indium, gallium, and zinc on the first gate insulating layer; a second gate insulating layer on the oxide semiconductor layer; a second gate electrode on the second gate insulating layer; a third insulating layer including a second silicon oxide film and a silicon nitride film stacked on the oxide semiconductor layer and the second gate electrode; one of a source electrode and a drain electrode that is in contact with the oxide semiconductor layer through the first opening of the third insulating layer; the other of the source electrode and the drain electrode contacting the oxide semiconductor layer through the second opening of the third insulating layer; a fourth insulating layer on the source electrode and the drain electrode; a first conductive layer on the fourth insulating layer, the first conductive layer functioning as a pixel electrode of a light-emitting element; a fifth insulating layer covering an end portion of the first conductive layer; an EL layer of the light-emitting element on the first conductive layer and the fifth insulating layer; a second conductive layer of the light-emitting element on the EL layer; a third conductive layer on the third insulating layer; a fourth conductive layer on the first resin layer and electrically connected to the third conductive layer; a width of the first gate electrode in a channel length direction is larger than a width of the second gate electrode; the first gate electrode, the second gate electrode, and the fourth conductive layer each comprise molybdenum; the source electrode, the drain electrode, and the third conductive layer each comprise titanium; the first opening has a region overlapping with the light-emitting element including the first conductive layer, the EL layer, and the second conductive layer; a third opening is formed in the first resin layer, the first insulating layer, the second resin layer, and the second insulating layer; a fourth opening in the first gate insulating layer and the third insulating layer; the third conductive layer has a region located within the fourth opening, the third conductive layer has regions overlapping the fourth insulating layer and the fifth insulating layer, the fourth conductive layer has a region located within the third opening, the fourth conductive layer has a region in contact with a lower surface of the third conductive layer, the fourth conductive layer has regions overlapping the fourth insulating layer and the fifth insulating layer, the third conductive layer and the fourth conductive layer do not have an area overlapping the substrate and the adhesive layer; the third conductive layer is located in the same layer as the source electrode and the drain electrode and has the same material; the fourth conductive layer is located in the same layer as the first gate electrode and has the same material as the first gate electrode; The display device, wherein the exposed lower surface of the fourth conductive layer is electrically connected to an FPC.

2. In claim 1, The display device, wherein the first resin layer and the second resin layer each contain a polyimide resin.

Images