Negative voltage driving circuit, chip, electronic apparatus, and vehicle

Abstract

The invention discloses a negative voltage driving circuit, a chip, electronic equipment and a vehicle, and belongs to the technical field of circuits. The negative voltage driving circuit comprises a monitoring module, a digital logic control module and a negative voltage generation module, the monitoring module is used for collecting a first working parameter of a transistor and transmitting the first working parameter to the digital logic control module; and the digital logic control module is used for determining a target negative voltage turn-off mode for the transistor according to the first working parameter, and controlling the negative voltage generation module to generate a corresponding negative voltage according to the target negative voltage turn-off mode. According to the technical scheme, the monitoring module collects the working parameters of the transistor in real time, the digital logic control module determines the optimal target negative voltage turn-off mode for the transistor according to the working parameters collected in real time, and then the negative voltage generation module is controlled to rapidly and accurately generate the negative voltage. And the driving requirements of the transistor under different working conditions can be quickly responded.

Description

Technical Field

[0001] This application relates to the field of circuit technology, and in particular to a negative pressure drive circuit, a chip, an electronic device, and a vehicle. Background Technology

[0002] SiC MOSFETs (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors), as third-generation wide-bandgap semiconductor devices, are increasingly popular in electric vehicles, industrial power supplies, and other fields due to their on-resistance, high switching speed, and excellent thermal performance. Compared to traditional Si MOSFETs, SiC MOSFETs typically have a lower gate threshold voltage. In a half-bridge structure, when the upper transistor turns on and the lower transistor turns off, the switching node generates an extremely high dv / dt. This voltage change is coupled to the gate of the lower transistor through Miller capacitance, producing a transient gate voltage spike. Once this spike exceeds the gate threshold voltage of the SiC MOSFET, it can cause false turn-on, leading to shoot-through of both transistors and damaging the device. Furthermore, SiC MOSFETs have a negative temperature coefficient of gate threshold voltage, and this problem becomes increasingly pronounced at high temperatures.

[0003] The related technology uses a capacitor and a controllable device connected in series to form a driving circuit. This driving circuit uses its own voltage difference to drive the SiC MOSFET. Since this solution is based on the characteristics of RC charging and discharging, the response speed is limited and it cannot meet the driving requirements of SiC MOSFET under different operating conditions. Summary of the Invention

[0004] This application provides a negative pressure drive circuit, chip, electronic device, and vehicle that can quickly respond to the driving requirements of transistors under different operating conditions.

[0005] To achieve the above objectives, in a first aspect, embodiments of this application provide a negative voltage driving circuit, comprising: Monitoring module, digital logic control module, and negative pressure generation module; The monitoring module is used to collect the first operating parameters of the transistor and transmit the first operating parameters to the digital logic control module. The digital logic control module is used to determine the target negative voltage shutdown mode for the transistor according to the first operating parameters, and to control the negative voltage generation module to generate the corresponding negative voltage according to the target negative voltage shutdown mode.

[0006] Optionally, determining a target negative voltage shutdown mode for the transistor based on the operating parameters includes: The first working parameter is matched with the pre-stored working parameter; wherein, the pre-stored working parameter is the working parameter corresponding to multiple candidate negative pressure shutdown modes pre-stored in the digital logic control module; Based on the matching results, a target negative voltage shutdown mode is determined for the transistor from the plurality of candidate negative voltage shutdown modes.

[0007] Optionally, the monitoring module includes: Voltage sampling circuit, current sampling circuit, and temperature sensor; The voltage sampling circuit is used to acquire the transistor's bus voltage and / or, crosstalk voltage and / or, gate voltage; The current sampling circuit is used to collect the load current of the transistor; The temperature sensor is used to collect the junction temperature of the transistor.

[0008] Optionally, the negative pressure generating module includes: A negative voltage charge pump is used to generate a corresponding negative voltage according to the target negative voltage shutdown mode; A Zener diode negative voltage circuit is used to generate a transient large current for the transient negative voltage requirement during high-speed switching.

[0009] Optionally, the negative pressure drive circuit further includes: A crosstalk suppression module, which is connected to the monitoring module and the digital logic control module, includes an active Miller clamp circuit and a low-impedance absorption circuit; The active Miller clamp circuit is used to activate when the gate voltage exceeds a preset voltage threshold and / or the gate voltage change exceeds a preset change threshold, so as to suppress crosstalk voltage. The low-impedance absorption circuit is used to activate when a crosstalk voltage spike is detected, providing an absorption path for the crosstalk voltage.

[0010] Optionally, the negative pressure drive circuit further includes: The drive adjustment module is configured to control the transistor to turn off according to the output signal of the digital logic control module, so as to adjust the drive resistance.

[0011] Optionally, the negative pressure drive circuit further includes: The protection and diagnostic circuit integrates at least one of an overcurrent protection circuit, an undervoltage lockout circuit, and an overtemperature protection circuit.

[0012] Secondly, embodiments of this application also provide a chip, which includes the negative pressure driving circuit described in any one of the above claims.

[0013] Thirdly, embodiments of this application also provide an electronic device, which includes a chip as described above.

[0014] Fourthly, embodiments of this application also provide a vehicle, including an electronic device as described above.

[0015] This application provides a negative voltage driving circuit, including a monitoring module, a digital logic control module, and a negative voltage generation module. The monitoring module collects first operating parameters of a transistor and transmits these parameters to the digital logic control module. The digital logic control module determines a target negative voltage turn-off mode for the transistor based on the first operating parameters and controls the negative voltage generation module to generate a corresponding negative voltage according to the target negative voltage turn-off mode. This technical solution allows the monitoring module to collect the transistor's operating parameters in real time, and the digital logic control module to determine the optimal target negative voltage turn-off mode based on these parameters. This, in turn, controls the negative voltage generation module to quickly and accurately generate the corresponding negative voltage according to the target negative voltage turn-off mode, enabling rapid response to the transistor's driving requirements under different operating conditions. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of a negative pressure driving circuit provided in an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a monitoring module provided in an embodiment of this application; Figure 3 This is a schematic diagram of the structure of a negative pressure generation module provided in an embodiment of this application; Figure 4 This is a schematic diagram of another negative pressure driving circuit provided in an embodiment of this application; Figure 5 This is a schematic diagram of the structure of a crosstalk suppression module provided in an embodiment of this application; Figure 6 A schematic diagram of another negative pressure driving circuit provided in the embodiments of this application; Figure 7 A system framework diagram of a negative voltage drive circuit provided in an embodiment of this application; Figure 8 This is a schematic diagram of another negative pressure driving circuit provided in the embodiments of this application; Figure 9 This is a structural schematic diagram of a vehicle provided in an embodiment of this application.

[0018] Explanation of icon numbers: 100. Monitoring module; 101. Voltage sampling circuit; 102. Current sampling circuit; 103. Temperature sensor; 200. Digital logic control module; 300. Negative pressure generation module; 301. Negative pressure charge pump; 302. Zener diode negative pressure circuit; 400. Crosstalk suppression module; 401. Active Miller clamp circuit; 402. Low impedance absorption circuit; 500. Drive adjustment module; 900. Vehicles.

[0019] The realization of the objectives, functional features and advantages of the embodiments of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0021] Furthermore, descriptions involving "first," "second," etc., in the embodiments of this application are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. If the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed in this application.

[0022] Please see Figure 1 , Figure 1 This application provides a schematic diagram of a negative voltage driving circuit according to an embodiment of the present application; the present application proposes a negative voltage driving circuit, including: Monitoring module 100, digital logic control module 200, and negative pressure generation module 300; The monitoring module 100 is used to collect the first operating parameters of the transistor and transmit the first operating parameters to the digital logic control module 200; The digital logic control module 200 is used to determine the target negative voltage turn-off mode for the transistor according to the first operating parameters, and to control the negative voltage generation module 300 to generate the corresponding negative voltage according to the target negative voltage turn-off mode.

[0023] In this embodiment, the transistor can be a SiC MOSFET. SiC MOSFETs are third-generation wide-bandgap semiconductor devices. Compared to traditional Si MOSFETs, SiC MOSFETs typically have a lower gate threshold voltage. In a half-bridge structure, when the upper transistor is turned on and the lower transistor is turned off, the switching node generates an extremely high dv / dt. This voltage change is coupled to the gate of the lower transistor through Miller capacitance, generating a transient gate voltage spike. Once this spike exceeds the gate threshold voltage of the SiC MOSFET, it will cause false turn-on, resulting in shoot-through between the upper and lower transistors and damaging the device. Therefore, a negative voltage drive circuit needs to be designed in the half-bridge structure to suppress crosstalk. This embodiment uses a SiC MOSFET as an example to describe the negative voltage drive circuit.

[0024] In this embodiment, the monitoring module 100 is configured with various signal monitoring circuits for real-time acquisition of the operating parameters of the SiC MOSFET. For example, the first operating parameters of the SiC MOSFET may include voltage-related parameters, current-related parameters, and temperature-related parameters, wherein the voltage-related parameters may be the bus voltage, gate voltage, crosstalk voltage, etc. of the SiC MOSFET; the current-related parameters may be the load current of the SiC MOSFET; and the temperature-related parameters may be the junction temperature of the SiC MOSFET.

[0025] Please see Figure 2 , Figure 2 This is a schematic diagram of the structure of a monitoring module provided in an embodiment of this application. The monitoring module 100 may include a voltage sampling circuit 101, a current sampling circuit 102, and a temperature sensor 103.

[0026] The voltage sampling circuit 101 is used to acquire the bus voltage and / or crosstalk voltage and / or gate voltage of the SiC MOSFET. The current sampling circuit 102 is used to collect the load current of the SiC MOSFET; Temperature sensor 103 is used to acquire the junction temperature of SiC MOSFET.

[0027] The bus voltage of the SiC MOSFET is the main source voltage applied to the half-bridge structure. The half-bridge structure consists of two SiC MOSFETs, forming the upper and lower transistors. The higher the bus voltage, the larger the dv / dt of the switching node, and the greater the risk of crosstalk. Therefore, a higher negative turn-off voltage is required. The negative voltage parameters corresponding to the target turn-off mode can be determined based on the bus voltage. The crosstalk voltage is the instantaneous voltage spike generated on the gate of the turned-off SiC MOSFET. This parameter indicates the severity of crosstalk. If the crosstalk voltage amplitude detected by the voltage sampling circuit is too high, the negative voltage in the target turn-off mode needs to be enhanced. This parameter also provides a basis for subsequent crosstalk suppression strategies. The gate voltage is the control voltage applied between the gate and source of the SiC MOSFET. It can determine whether the SiC MOSFET is in the turn-off, turn-on, or Miller plateau period, providing a reference for determining the target negative turn-off mode and also providing parameter basis for crosstalk suppression and driving strategies. The load current of a SiC MOSFET refers to the magnitude of the current flowing through the SiC MOSFET, reflecting the circuit's load condition. When a large load current is detected, the junction temperature of the SiC MOSFET will rise. This parameter can be used to adjust the negative voltage shutdown mode, for example, to prepare for high-temperature operating conditions. The junction temperature of a SiC MOSFET refers to the actual operating temperature of the PN junction inside the SiC MOSFET semiconductor chip. When the temperature sensor detects a high junction temperature, the device's anti-interference capability is decreasing. In this case, increasing the shutdown negative voltage can compensate for the reduced threshold voltage caused by the temperature increase, ensuring safe shutdown throughout the entire operating temperature range.

[0028] In this embodiment, the monitoring module 100 collects the operating parameters of the SiC MOSFET in real time, and the digital logic control module 200 determines the most suitable negative voltage turn-off mode for the SiC MOSFET based on these collected operating parameters and through a pre-stored control mapping table.

[0029] The pre-stored control mapping table includes multiple pre-stored candidate negative pressure shutdown modes, each with corresponding operating parameters.

[0030] In some embodiments, determining a target negative voltage shutdown mode for the transistor based on operating parameters includes: The first working parameter is matched with the pre-stored working parameter; wherein, the pre-stored working parameter is the working parameter corresponding to multiple candidate negative pressure shutdown modes pre-stored in the digital logic control module 200; The target negative voltage shutdown mode is determined for the transistor from multiple candidate negative voltage shutdown modes based on the matching results.

[0031] In this embodiment, the pre-stored candidate negative voltage shutdown modules may include high-speed mode, high-temperature mode, and high-load mode. For example, the operating parameters corresponding to the high-speed mode can be the mode when the switching frequency is between 100 kHz and 500 kHz and the bus voltage is greater than 50% of the rated voltage of the SiC MOSFET; the high-temperature mode is the negative voltage shutdown mode corresponding to when the junction temperature of the SiC MOSFET exceeds a set threshold.

[0032] When the SiC MOSFET is in a high switching state and a high bus voltage is acquired, the target negative voltage turn-off mode of the SiC MOSFET is high-speed mode. At this time, the digital logic control module 200 automatically switches the negative voltage turn-off mode of the SiC MOSFET to high-speed mode, enhancing the negative voltage to -5 to -8V.

[0033] After the target negative voltage shutdown mode is determined, the digital logic control module 200 controls the negative voltage generation module 300 to generate a stable and adjustable negative voltage according to the target negative voltage shutdown mode.

[0034] Please see Figure 3 , Figure 3 This is a schematic diagram of a negative voltage generation module provided in an embodiment of this application. In some embodiments, the negative voltage generation module 300 includes: a negative voltage charge pump 301 and a Zener diode negative voltage circuit 302; the negative voltage charge pump 301 is used to generate a corresponding negative voltage according to the target negative voltage turn-off mode; the Zener diode negative voltage circuit 302 may be composed of a Zener diode and a current-limiting resistor, and is used to generate a transient large current for the transient negative voltage demand during high-speed switching.

[0035] The negative pressure charge pump 301 can be a linear negative pressure charge pump 301. This linear negative pressure charge pump 301 is based on the target negative pressure turn-off mode and uses a simple charge pump structure to realize the conversion from positive pressure to negative pressure, thereby providing a stable and adjustable negative pressure source. The LDO (Low Dropout Linear Regulator) negative pressure feedback used in this embodiment can accurately control the negative pressure bias and prevent the system from becoming disordered. The Zener diode negative pressure circuit 302 is composed of a Zener diode and a current-limiting resistor, which can achieve fast response and has the ability to provide a large instantaneous current at the moment of switching, and can specifically cope with the transient negative pressure demand during high-speed switching.

[0036] This application provides a negative voltage driving circuit, including a monitoring module 100, a digital logic control module 200, and a negative voltage generation module 300. The monitoring module 100 collects first operating parameters of a transistor and transmits them to the digital logic control module 200. The digital logic control module 200 determines a target negative voltage turn-off mode for the transistor based on the first operating parameters and controls the negative voltage generation module 300 to generate a corresponding negative voltage according to the target negative voltage turn-off mode. This technical solution allows the monitoring module 100 to collect the transistor's operating parameters in real time, and the digital logic control module 200 to determine the optimal target negative voltage turn-off mode for the transistor based on the collected parameters. This, in turn, controls the negative voltage generation module 300 to quickly and accurately generate the corresponding negative voltage according to the target negative voltage turn-off mode, enabling rapid response to the transistor's driving requirements under different operating conditions.

[0037] Please see Figure 4 , Figure 4 This is a schematic diagram of another negative pressure driving circuit provided in an embodiment of this application. Based on the above embodiments, the negative pressure driving circuit of this application further includes: a crosstalk suppression module 400, which is connected to the monitoring module 100 and the digital logic control module 200. Please refer to... Figure 5 The crosstalk suppression module 400 in this embodiment includes an active Miller clamp circuit 401 and a low impedance absorption circuit 402.

[0038] The active Miller clamp circuit 401 is used to suppress crosstalk voltage when the gate voltage exceeds a preset voltage threshold and / or the gate voltage change exceeds a preset change threshold. The low-impedance absorption circuit 402 is used to activate when a crosstalk voltage spike is detected, providing an absorption path for the crosstalk voltage.

[0039] In this embodiment, the active Miller clamp circuit 401 can be composed of a low-voltage clamping MOSFET and a voltage detection circuit. The drain of the low-voltage clamping MOSFET is connected to the gate of the SiC MOSFET, and its source is connected to the negative voltage output terminal. The voltage detection circuit compares the detected gate voltage with a preset voltage threshold or the change in gate voltage with a preset change threshold in real time. When the change in gate voltage exceeds the voltage threshold or the change in gate voltage exceeds the change threshold, the low-voltage clamping MOSFET is immediately turned on, providing a low-impedance path, thereby clamping the gate voltage of the SiC MOSFET at a safe level and preventing the lower transistor UB from being mis-turned on. In this embodiment, the low-impedance absorption circuit 402 can be composed of a MOSFET. When a crosstalk voltage spike is detected, the switch is quickly turned on, opening the low-impedance path and immediately absorbing the current coupled to the gate, thereby effectively suppressing the rise of the gate voltage.

[0040] This embodiment activates the active Miller clamp circuit 401 when the gate voltage exceeds a preset voltage threshold and / or the gate voltage change exceeds a preset change threshold. This allows for action before crosstalk voltage spikes fully form and reach a dangerous level, rather than waiting for the spike to appear before responding. This early activation of the crosstalk suppression mechanism enables a rapid response to anomalies, superior to traditional response modes. The low-impedance absorption circuit 402 also quickly activates the low-impedance path upon detecting a crosstalk voltage spike, achieving rapid crosstalk suppression.

[0041] Please see Figure 6 , Figure 6 A schematic diagram of another negative pressure driving circuit provided in this application embodiment. Based on the above embodiments, the driving circuit of this application embodiment further includes: The drive adjustment module 500 is configured to control the turn-off of the transistor according to the output signal of the digital logic control module 200, so as to adjust the drive resistance.

[0042] The drive adjustment module 500 is connected to the digital logic control module 200. This unit can include multiple transistors and resistors connected in parallel. It adopts variable drive resistance technology. According to the parameters output from the data logic circuit, the drive resistance can be programmably adjusted by turning off the transistors. It can automatically adjust the resistance value of the SiC MOSFET gate and has the ability to adjust the drive current. It can adapt to the needs of different types of SiC MOSFETs and different operating frequencies.

[0043] For example, when the gate voltage of the SiC MOSFET is detected to rise from negative to threshold voltage and there is a certain spike in crosstalk voltage, the SiC MOSFET is in a switching state. At this time, a small resistor is switched to speed up the switching speed. When the SiC MOSFET is detected to be in the Miller plateau period, it is automatically switched to a large resistor to reduce the gate voltage change rate and reduce transient current impact.

[0044] Based on the above embodiments, the driving circuit of this application embodiment further includes: The protection circuit integrates at least one of the following: overcurrent protection circuit, undervoltage lockout circuit, and overtemperature protection circuit.

[0045] As an example, the overcurrent protection circuit can employ desaturation detection technology to slowly turn off the SiC MOSFET when a short-circuit fault is detected, preventing voltage spikes from damaging the device. The undervoltage lockout circuit takes appropriate protective measures, such as forcibly shutting down the drive output, when a voltage is detected to be below a preset threshold. The overtemperature protection circuit automatically shuts down the drive output and reports a fault when the operating temperature exceeds the safe limit; it is deactivated once the temperature returns to a safe value and a reset signal is received.

[0046] The protection circuit provided in this embodiment can ensure that the driver chip can work safely and reliably under various abnormal conditions.

[0047] See also Figure 7 and Figure 8 , Figure 7 This is a system framework diagram of a negative voltage drive circuit provided in an embodiment of this application. Figure 8 This is a schematic diagram of another negative pressure driving circuit provided in an embodiment of this application.

[0048] The negative pressure drive circuit includes: The system includes a monitoring module, a data logic control module, a negative pressure generation module, a crosstalk suppression module, a drive adjustment module, and a protection circuit.

[0049] Among them, the monitoring module and the data logic control module serve as the negative pressure regulation network of the negative pressure drive circuit, which are used to monitor the working parameters in real time and determine the target negative pressure shutdown mode. The negative pressure generation module, the crosstalk suppression module, the drive adjustment module, and the protection circuit are used to perform crosstalk suppression and circuit protection operations according to the target negative pressure shutdown mode and the working parameters monitored in real time.

[0050] The data logic control module, drive adjustment module, and protection circuit can be integrated onto a single-module chip for digital control and drive. The monitoring module, crosstalk suppression module, and drive adjustment module are also single-module chips integrating their respective functional circuits. This application's embodiments achieve miniaturization by combining complex peripheral circuits into a multi-functional single chip and unifying their operation around a control logic module.

[0051] In this embodiment, the monitoring module monitors various sampling signals, which are then converted by an ADC and input to other modules as data. The negative pressure generation module switches between different circuits to activate the charge pump and Zener diode absorption circuit, such as startup, sleep, and activation, based on the data from the monitoring module. The crosstalk suppression module uses a high-speed comparator to control the opening or closing of the drive resistor circuit to activate different working paths to transmit to the switching transistor. The digital logic control circuit unifies the various parameters received from the ground, adjusts the drive resistor through the drive control module, and directly outputs the output signal to the upper transistor UT and the lower transistor UB in the half-bridge structure.

[0052] Furthermore, the monitoring module is connected to the negative pressure generation module, the digital logic control circuit, and the crosstalk suppression module, respectively. It collects the operating parameters of the SiC MOSFET in real time through various sampling circuits, and inputs the collected operating parameters into the negative pressure generation module, the digital logic control module, and the crosstalk suppression module after ADC analog-to-digital conversion as the data basis.

[0053] The crosstalk suppression module is connected to the digital logic control module and is used to input the gate voltage signal after crosstalk suppression to the digital logic control module so that the digital logic control module can control the output of the drive adjustment unit according to the received parameters.

[0054] Further reading Figure 8 The monitoring module may include a voltage sampling circuit for acquiring bus voltage, a voltage sampling circuit for acquiring crosstalk voltage, a temperature sensor for acquiring SiC MOSFET junction temperature, a current sampling circuit for acquiring load current, and a voltage sampling circuit for acquiring gate voltage. The monitoring module inputs the acquired SiC MOSFET operating parameters into the digital logic control module. By matching the operating parameters with a pre-stored control mapping table in the digital logic control module, the target negative voltage turn-off mode corresponding to the current SiC MOSFET is determined. The negative voltage generation module then generates the corresponding negative voltage based on this target turn-off mode.

[0055] Please see Figure 8The negative pressure generation module includes a negative pressure charge pump, a Zener diode, a control unit, and a switching circuit configured within the control module. The negative pressure charge pump, based on the target negative pressure shutdown mode, converts positive to negative pressure through its pump structure, providing a stable and adjustable negative pressure source. The Zener diode negative pressure circuit, composed of a Zener diode and a current-limiting resistor, provides transient high-current capability, specifically designed to handle instantaneous, high-amplitude crosstalk voltage spikes generated during high-speed switching. The control unit adjusts the operating states of the negative pressure charge pump and the Zener diode according to the target shutdown mode using the switching circuit. For example, when a crosstalk voltage spike is detected, the control module activates the Zener diode negative pressure circuit through the switching circuit, controlling the negative pressure charge pump to enter sleep mode, thus achieving a fast and accurate response.

[0056] The negative pressure generation module in this embodiment can quickly and accurately respond to different target shutdown modules. The voltage-stabilizing negative pressure tube path does not work continuously, but is only in the startup phase under instantaneous high current, which greatly reduces transmission power consumption and achieves efficient and stable generation of negative pressure.

[0057] The crosstalk suppression module includes an active Miller clamp circuit and a low-impedance absorption circuit. The active Miller clamp circuit can activate the suppression mechanism in advance based on the real-time detected gate voltage. The low-impedance absorption circuit can quickly open the low-impedance path when a crosstalk voltage spike is detected, providing a path for crosstalk current absorption and thus effectively suppressing crosstalk.

[0058] Please see Figure 8 The active Miller clamping circuit in this embodiment includes an NMOS transistor and a high-speed comparator. The NMOS transistor acts as a low-voltage clamping MOSFET, with its drain connected to the gate of the SiC MOSFET and its source connected to the negative voltage output terminal. The high-speed comparator, acting as a voltage detection circuit, continuously monitors the gate voltage of the SiC MOSFET. The high-speed comparator compares the detected gate voltage with a preset voltage threshold, or compares the change in gate voltage with a preset change threshold. When the change in gate voltage exceeds the voltage threshold, or when the change in gate voltage exceeds the change threshold, the NMOS transistor is immediately turned on, providing a low-impedance path to quickly discharge the charge injected by the Miller capacitor, thereby clamping the gate voltage of the SiC MOSFET at a safe level and preventing false turn-on.

[0059] The low-impedance absorption circuit in this embodiment includes an NMOS transistor, which serves as the switch in the low-impedance absorption circuit. The low-impedance absorption circuit is connected in parallel between the gate and source of the SiC MOSFET. The switching of the low-impedance absorption circuit is controlled by the control logic signal INB. When a crosstalk voltage spike is detected, the switch is quickly turned on, opening the low-impedance path and immediately absorbing the current coupled to the gate, thereby effectively suppressing the rise of the gate voltage.

[0060] In this embodiment, the digital logic control module, drive adjustment module, and protection circuit are integrated into a single-mode chip. The digital logic control module receives parameter signals output from the negative voltage generation module, monitoring module, and crosstalk suppression module, and unifies the received parameter signals. The drive adjustment unit may include multiple parallel resistors and MOSFET switches, used to dynamically adjust the drive resistance according to the operating frequency of different types of SiC MOSFETs. For example, if the current SiC MOSFET is in high-frequency switching mode, the drive resistance can be adjusted to a small resistance by controlling the MOSFET switch to reduce switching losses.

[0061] The technical solution of this application embodiment can intelligently sense the operating state of the SiC MOSFET half-bridge circuit through a monitoring module, and switch the corresponding negative voltage turn-off mode according to the operating state. Based on the negative voltage turn-off mode, a negative voltage generation network quickly and accurately generates the corresponding negative voltage, avoiding energy waste caused by inaccurate voltage. The crosstalk suppression module can activate the crosstalk suppression mechanism in advance based on the monitored operating data, and the drive adjustment module can realize dynamic adjustment of the drive resistor to meet the drive resistor requirements under different operating conditions. This negative voltage drive circuit can provide optimal crosstalk suppression technology and drive performance for SiC MOSFETs under various operating conditions, while being compatible with system efficiency and cost-effectiveness.

[0062] According to a second aspect of this application, embodiments of this application also provide a chip including the aforementioned negative voltage driving circuit. The negative voltage driving circuit includes: a monitoring module, a digital logic control module, and a negative voltage generation module. The monitoring module is used to acquire first operating parameters of the transistor and transmit the first operating parameters to the digital logic control module. The digital logic control module is used to determine a target negative voltage turn-off mode for the transistor based on the first operating parameters and control the negative voltage generation module to generate a corresponding negative voltage based on the target negative voltage turn-off mode. The technical solution of this application embodiment can quickly respond to the driving requirements of the transistor under different operating conditions.

[0063] According to a third aspect of this application, embodiments of this application also provide an electronic device including the aforementioned chip.

[0064] According to a fourth aspect of this application, embodiments of this application also provide a vehicle including the aforementioned electronic equipment. Figure 9 As shown, the vehicle possesses all the beneficial effects of the aforementioned electronic equipment, which will not be repeated here. In this embodiment, the vehicle 900 can be a gasoline-powered vehicle, a plug-in hybrid electric vehicle, or a new energy vehicle, etc., and this application does not specifically limit it in this regard.

[0065] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0066] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0067] The above description is merely an optional embodiment of this application and does not limit the patent scope of this application. Any equivalent structural transformations made based on the inventive concept of this application and the contents of the specification and drawings of this application, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this application.

Claims

1. A negative voltage driving circuit, characterized in that, include: Monitoring module (100), digital logic control module (200) and negative pressure generation module (300); The monitoring module (100) is used to collect the first operating parameters of the transistor and transmit the first operating parameters to the digital logic control module (200). The digital logic control module (200) is used to determine the target negative voltage turn-off mode for the transistor according to the first operating parameters, and to control the negative voltage generation module (300) to generate the corresponding negative voltage according to the target negative voltage turn-off mode.

2. The negative voltage driving circuit according to claim 1, characterized in that, Determining the target negative voltage shutdown mode for the transistor based on the operating parameters includes: The first working parameter is matched with the pre-stored working parameter; wherein the pre-stored working parameter is the working parameter corresponding to multiple candidate negative pressure shutdown modes pre-stored in the digital logic control module (200); Based on the matching results, a target negative voltage shutdown mode is determined for the transistor from the plurality of candidate negative voltage shutdown modes.

3. The negative voltage driving circuit according to claim 1, characterized in that, The monitoring module includes: Voltage sampling circuit (101), current sampling circuit (102), and temperature sensor (103); The voltage sampling circuit (101) is used to acquire the bus voltage and / or, crosstalk voltage and / or, gate voltage of the transistor; The current sampling circuit (102) is used to collect the load current of the transistor; The temperature sensor (103) is used to collect the junction temperature of the transistor T.

4. The negative voltage driving circuit according to claim 1, characterized in that, The negative pressure generation module (300) includes: A negative voltage charge pump (301) is used to generate a corresponding negative voltage according to the target negative voltage shutdown mode; Zener diode negative voltage circuit (302) is used to generate transient large current for transient negative voltage demand during high-speed switching process.

5. The negative voltage driving circuit according to claim 1, characterized in that, Also includes: Crosstalk suppression module (400), which is connected to the monitoring module (100) and the digital logic control module (200), includes an active Miller clamp circuit (401) and a low impedance absorption circuit (402). The active Miller clamp circuit (401) is used to turn on when the gate voltage exceeds a preset voltage threshold and / or the gate voltage change exceeds a preset change threshold, so as to suppress crosstalk voltage. The low-impedance absorption circuit (402) is used to activate when a crosstalk voltage spike is detected, providing an absorption path for the crosstalk voltage.

6. The negative voltage drive circuit according to any one of claims 1 to 5, characterized in that, Also includes: The drive adjustment module (500) is configured to control the turn-off of the transistor according to the output signal of the digital logic control module to achieve adjustment of the drive resistance.

7. The negative voltage driving circuit according to claim 1, characterized in that, Also includes: The protection and diagnostic circuit integrates at least one of an overcurrent protection circuit, an undervoltage lockout circuit, and an overtemperature protection circuit.

8. A chip, characterized in that, Includes the negative pressure drive circuit as described in any one of claims 1 to 7.

9. An electronic device, characterized in that, Includes the chip described in claim 8.

10. A vehicle, characterized in that, Includes an electronic device as described in claim 9.

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