Semiconductor Devices

Abstract

To provide a semiconductor device that can improve yield.SOLUTION: A semiconductor device 1 according to one embodiment includes: a chip 11; a first electrode 12 provided on the chip; a first connector 14 provided above the first electrode, extending in a first direction X, and provided with a joint portion 14a to be joined to the first electrode, on an end portion in the first direction thereof; and a joint member 13 for use in joint between the first electrode and the joint portion. The joint portion 14a includes a notch portion 14f on at least one end portion in the first direction X of an upper surface of the joint portion. The joint member 13 is in contact with the first electrode 12, a lower surface of the joint portion 14a facing the first electrode, and at least part of the notch portion 14f.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] Semiconductor devices using lead frames are known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-141235 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-69990 [Patent Document 3] Patent No. 5252934 Summary of the Invention [Problem to be solved by the invention]

[0004] A semiconductor device capable of improving yield is provided. [Means for solving the problem]

[0005] The semiconductor device according to the embodiment includes a chip, a first electrode provided on the chip, a first connector provided above the first electrode, extending in a first direction, and having a joint portion at an end in the first direction that is joined to the first electrode, and a joint member used to join the first electrode to the joint portion. The joint portion has a notch on an upper surface of the joint portion at least at one end in the first direction. The cutout has a portion that is not in contact with the joining member. The bonding member is in contact with the first electrode, a lower surface of the bonding portion facing the first electrode, and at least a part of the cutout portion. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a plan view showing an example of the configuration of a semiconductor device according to the first embodiment. [Figure 2]FIG. 2 is a cross-sectional view showing an example of the cross-sectional structure of the semiconductor device according to the first embodiment. [Figure 3] FIG. 3 is a plan view showing the configuration of a portion of a gate terminal included in the semiconductor device according to the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view showing a cross-sectional structure of a part of a gate terminal included in the semiconductor device according to the first embodiment. [Figure 5] FIG. 5 is a cross-sectional view showing a cross-sectional structure of a part of a gate terminal included in the semiconductor device according to the first embodiment. [Figure 6] FIG. 6 is a plan view showing the configuration of a portion of a gate terminal included in a semiconductor device according to a modified example of the first embodiment. [Figure 7] FIG. 7 is a cross-sectional view showing a cross-sectional structure of a part of a gate terminal included in a semiconductor device according to a modification of the first embodiment. [Figure 8] FIG. 8 is a plan view showing the configuration of a portion of a gate terminal included in the semiconductor device according to the second embodiment. [Figure 9] FIG. 9 is a cross-sectional view showing a cross-sectional structure of a part of a gate terminal included in a semiconductor device according to the second embodiment. [Figure 10] FIG. 10 is a plan view showing the configuration of a portion of a gate terminal included in a semiconductor device according to the third embodiment. [Figure 11] FIG. 11 is a cross-sectional view showing a cross-sectional structure of a part of a gate terminal included in a semiconductor device according to the third embodiment. [Figure 12] FIG. 12 is a plan view showing the configuration of a portion of a gate terminal included in a semiconductor device according to a modification of the third embodiment. [Figure 13] FIG. 13 is a cross-sectional view showing a cross-sectional structure of a part of a gate terminal included in a semiconductor device according to a modification of the third embodiment. [Figure 14] FIG. 14 is a plan view showing an example of the configuration of the semiconductor device according to the fourth embodiment. [Figure 15] FIG. 15 is a cross-sectional view showing an example of the cross-sectional structure of the semiconductor device according to the fourth embodiment. [Figure 16]FIG. 16 is a plan view showing the configuration of a portion of a source terminal included in a semiconductor device according to the fourth embodiment. [Figure 17] FIG. 17 is a cross-sectional view showing a cross-sectional structure of a part of a source terminal included in a semiconductor device according to the fourth embodiment. [Figure 18] FIG. 18 is a cross-sectional view showing a cross-sectional structure of a part of a source terminal included in a semiconductor device according to the fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments will be described with reference to the drawings. The dimensions and ratios of the drawings are not necessarily the same as those in reality. In the following description, components having substantially the same functions and configurations are given the same reference numerals, and repeated description may be omitted. When elements having similar configurations are particularly distinguished from one another, different letters or numbers may be added to the end of the same reference numerals. Furthermore, all descriptions of one embodiment also apply to descriptions of other embodiments, unless explicitly or obviously excluded.

[0008] 1. First embodiment A semiconductor device according to a first embodiment will be described. In the following, a semiconductor device using a lead frame will be described as an example. The semiconductor device is used in, for example, a transistor package.

[0009] 1.1 Configuration of semiconductor device The configuration of the semiconductor device will be described with reference to Fig. 1. Fig. 1 is a plan view showing an example of the configuration of the semiconductor device.

[0010] As shown in FIG. 1, the semiconductor device 1 includes a lead frame 10, a chip 11, a gate electrode (pad) 12, a bonding member 13, a gate terminal (connector) 14, an electrode terminal 15, a source electrode (pad) 16, a bonding member 17, a source terminal (connector) 18, an electrode terminal 19, and a resin 30. Note that the resin 30 is omitted in the example of FIG. 1. In the following description, the X direction is approximately parallel to the surface of the lead frame 10 and corresponds to, for example, the direction from the electrode terminal 15 toward the lead frame 10. The Y direction is approximately parallel to the surface of the lead frame 10 and corresponds to, for example, the direction from the electrode terminal 15 toward the electrode terminal 19. The Z direction is approximately perpendicular to the surface of the lead frame 10 and corresponds to the direction from the lead frame 10 toward the chip 11.

[0011] The lead frame 10 is a frame that supports and fixes the chip 11. The lead frame 10 has, for example, a plate shape. Of both ends of the lead frame 10 in the X direction, the end farther from the electrode terminal 15 extends in the X direction. The lead frame 10 is made of a conductive material, and may be, for example, a metal material.

[0012] The chip 11 is, for example, an IC (Integrated Circuit) chip. The chip 11 is provided on the lead frame 10.

[0013] The gate electrode 12 is provided on the chip 11. The gate electrode 12 has, for example, a substantially rectangular shape in a top view (viewed from the upper side of the paper). The gate electrode 12 is made of a conductive material, and may be, for example, a metal material.

[0014] The bonding member 13 is, for example, a conductive material such as solder. The bonding member 13 has, for example, a substantially rectangular shape in top view. The bonding member 13 is provided on the gate electrode 12. The bonding member 13 bonds the gate electrode 12 and the gate terminal 14 together.

[0015] The gate terminal 14 is, for example, a terminal that electrically connects the gate electrode 12 and the electrode terminal 15. The gate terminal 14 has, for example, a substantially rectangular shape in top view. The gate terminal 14 extends in the X direction. The gate terminal 14 is provided above the gate electrode 12. The gate terminal 14 is made of a conductive material, and may be, for example, a metal material.

[0016] The gate terminal 14 includes a joint portion 14a, a bent portion 14b, a bridge portion 14c, a bent portion 14d, and a joint portion 14e.

[0017] Of the two ends in the X direction, the gate terminal 14 has a junction 14a at the end closer to the gate electrode 12 (the end on the gate electrode 12 side) and a junction 14e at the end closer to the electrode terminal 15 (the end on the electrode terminal 15 side).

[0018] The bonding portion 14a is bonded onto the gate electrode 12 by the bonding member 13. As a result, the gate terminal 14 is electrically connected to the gate electrode 12.

[0019] The upper surface of the joint 14a has a notch 14f. That is, the notch 14f refers to a part of the upper surface of the joint 14a. The notch 14f is provided on at least one end of the upper surface of the joint 14a in the X direction (the end farther from the bent portion 14b). In other words, the joint 14a has the notch 14f on at least one end of its upper surface in the X direction. The configurations of the joint 14a and the notch 14f will be described in detail later.

[0020] For example, the gate terminal 14 bends upward at the boundary between the joint 14a and the bent portion 14b, and bends in the X direction at the boundary between the bent portion 14b and the bridge portion 14c. For example, the gate terminal 14 bends downward at the boundary between the bridge portion 14c and the bent portion 14d, and bends in the X direction at the boundary between the bent portion 14d and the joint 14e. The top surfaces of the joint 14a, the bridge portion 14c, and the joint 14e are substantially parallel. The top surface of the bridge portion 14c is located higher than the top surfaces of the joints 14a and 14e. In other words, the gate terminal 14 has a step in the X direction.

[0021] The electrode terminal 15 is, for example, a gate terminal used for connecting the semiconductor device 1 to the outside. The electrode terminal 15 is provided spaced apart from the lead frame 10 in the X direction. Of both ends of the electrode terminal 15 in the X direction, the end farther from the lead frame 10 extends in the X direction. The electrode terminal 15 is made of a conductive material, and may be, for example, a metal material.

[0022] The electrode terminal 15 includes a base 15a, a bent portion 15b, and a joint portion 15c. The electrode terminal 15 is bent upward at the boundary between the base 15a and the bent portion 15b, and is bent in the X direction at the boundary between the bent portion 15b and the joint portion 15c. The top surface of the base 15a and the top surface of the joint portion 15c are substantially parallel. The top surface of the joint portion 15c is located higher than the top surface of the base 15a. In other words, the electrode terminal 15 has a step in the X direction.

[0023] The joint portion 14e is joined onto the joint portion 15c of the electrode terminal 15 by a joining member (not shown).

[0024] The source electrode 16 is provided on the chip 11. The source electrode 16 has, for example, a substantially L-shape in top view. The source electrode 16 is made of a conductive material, and may be, for example, a metal material.

[0025] The bonding member 17 is made of a conductive material such as solder. The bonding member 17 has, for example, a substantially L-shape in top view. The bonding member 17 is provided on the source electrode 16. The bonding member 17 bonds the source electrode 16 and a source terminal 18 together.

[0026] The source terminal 18 is, for example, a terminal that electrically connects the source electrode 16 and the electrode terminal 19. The source terminal 18 has, for example, a substantially L-shape in top view. The source terminal 18 extends in the X direction. The source terminal 18 is provided above the source electrode 16. The source terminal 18 is made of a conductive material, and may be, for example, a metal material.

[0027] The source terminal 18 includes a joint portion 18a, a bent portion 18b, a bridge portion 18c, a bent portion 18d, and a joint portion 18e.

[0028] Of the two ends in the X direction, the source terminal 18 has a junction 18a at the end closer to the source electrode 16 (the end on the source electrode 16 side) and a junction 18e at the end closer to the electrode terminal 19 (the end on the electrode terminal 19 side).

[0029] The bonding portion 18a is bonded onto the source electrode 16 by the bonding member 17. As a result, the source terminal 18 is electrically connected to the source electrode 16.

[0030] For example, the source terminal 18 bends upward at the boundary between the joint 18a and the bent portion 18b, and bends in the X direction at the boundary between the bent portion 18b and the bridge portion 18c. For example, the source terminal 18 bends downward at the boundary between the bridge portion 18c and the bent portion 18d, and bends in the X direction at the boundary between the bent portion 18d and the joint 18e. The top surfaces of the joint 18a, the bridge portion 18c, and the joint 18e are substantially parallel. The top surface of the bridge portion 18c is located higher than the top surfaces of the joints 18a and 18e. In other words, the source terminal 18 has a step in the X direction.

[0031] The electrode terminal 19 is, for example, a source terminal used for connecting the semiconductor device 1 to the outside. The electrode terminal 19 is provided spaced apart from the electrode terminal 15 in the Y direction. The electrode terminal 19 is provided spaced apart from the lead frame 10 in the X direction. Of both ends of the electrode terminal 19 in the X direction, the end farther from the lead frame 10 extends in the X direction. The electrode terminal 19 is made of a conductive material, and may be, for example, a metal material.

[0032] The electrode terminal 19 includes a base 19a, a bent portion 19b, and a joint portion 19c. The electrode terminal 19 is bent upward at the boundary between the base 19a and the bent portion 19b, and is bent in the X direction at the boundary between the bent portion 19b and the joint portion 19c. The top surface of the base 19a and the top surface of the joint portion 19c are approximately parallel. The top surface of the joint portion 19c is located higher than the top surface of the base 19a. In other words, the electrode terminal 19 has a step in the X direction.

[0033] The joint portion 18e is joined onto the joint portion 19c of the electrode terminal 19 by a joining member (not shown).

[0034] A portion of the lead frame 10, the chip 11, the gate electrode 12, the bonding member 13, the gate terminal 14, a portion of the electrode terminal 15, the source electrode 16, the bonding member 17, the source terminal 18, and a portion of the electrode terminal 19 are covered with a resin 30 (not shown). The resin 30 is, for example, an epoxy resin.

[0035] 1 are, for example, parts of a lead frame (not shown), which are the remaining portions that are formed by cutting and removing the lead frame (not shown) during the manufacturing process. The lead frame 10 functions as, for example, a drain electrode.

[0036] The cross-sectional structure of the semiconductor device 1 will be described with reference to FIG.

[0037] FIG. 2 is a cross-sectional view (a cross-sectional view taken along line II in FIG. 1) showing an example of the cross-sectional structure of the semiconductor device 1. As shown in FIG.

[0038] As shown in FIG. 2, the electrode terminal 15 is bent by the bent portion 15b so that the upper surface of the joint portion 15c is positioned higher than the upper surface of the base portion 15a.

[0039] A chip 11 is provided on a lead frame 10. A gate electrode 12 is provided on the chip 11. A bonding member 13 is provided on the gate electrode 12. A bonding portion 14a of a gate terminal 14 is provided on the bonding member 13. The lower surface of the bonding portion 14a, the side surfaces of the X-direction ends of the bonding portion 14a, and part of the notch 14f are in contact with the bonding member 13. The gate terminal 14 is bent by bent portions 14b and 14d so that the upper surface of the bridge portion 14c is positioned higher than the upper surfaces of the bonding portions 14a and 14e. In the X direction, the notch 14f extends downward from the upper surface of the bonding portion 14a, not including the notch 14f.

[0040] A joint portion 14e of the gate terminal 14 is provided on the joint portion 15c of the electrode terminal 15. The joint portion 14e is joined to the joint portion 15c by a joining member (not shown).

[0041] The lead frame 10, chip 11, gate electrode 12, bonding member 13, gate terminal 14, and electrode terminal 15 are covered with resin 30. Resin 30 is embedded in the space surrounded by the lead frame 10, chip 11, gate electrode 12, bonding member 13, gate terminal 14, and electrode terminal 15.

[0042] 1.2 Gate terminal configuration The configuration of the gate terminal 14 will be described in detail with reference to Figures 3 to 5. The following description will focus on the configuration of the joint portion 14a and the notch portion 14f.

[0043] FIG. 3 is a plan view showing the configuration of a part of the gate terminal 14 (the joint portion 14a, the bent portion 14b, and the bridge portion 14c).

[0044] 3, the joint portion 14a is provided on the joint member 13. A portion of the cutout portion 14f (hereinafter also referred to as "cutout portion 14f1") is covered by the joint member 13. The portion surrounded by the dotted line in FIG. 3 is the portion of the cutout portion 14f1 covered by the joint member 13.

[0045] In the example of FIG. 3, of both ends of the bonding member 13 in the X direction, the end closer to the notch 14f1 reaches one end of the gate electrode 12 in the X direction, but it does not have to reach one end of the gate electrode 12 in the X direction.

[0046] 4 is a cross-sectional view (a cross-sectional view taken along line II-II in FIG. 3) showing the cross-sectional structure of a portion of gate terminal 14. In the following description, the side surface of the end of gate electrode 12 in the X direction (the side surface (end face) of the end farther from bent portion 14b) will be referred to as "S1," and the side surface (end face) of the end of joint portion 14a in the X direction will be referred to as "surface S2."

[0047] As shown in Fig. 4, the notch 14f1 has an inclined surface Sa with respect to the upper surface of the joint 14a that does not include the notch 14f1. The inclined surface Sa is formed, for example, by pressing a member against the corner of the joint 14a to crush the corner of the joint 14a. Note that the method of forming the inclined surface Sa is not limited to this. The angle θ1 of the inclined surface Sa with respect to a plane parallel to the upper surface of the joint 14a that does not include the notch 14f1 can be set to any value.

[0048] The height H1 of the surface S2 of the junction 14a (the height from the lower surface of the junction 14a to the lower end of the notch 14f1) is smaller than the height H2 from the lower surface of the junction 14a to the upper surface excluding the notch 14f1. In the X direction, the position of the surface S2 of the junction 14a does not reach the position of the surface S1 of the gate electrode 12. In other words, the position of the side surface S2 of the X-direction end of the junction 14a is between the position of the side surface S1 of one end of the gate electrode 12 in the X direction and the position of the side surface of the other end of the gate electrode 12 in the X direction. In the X direction, the width W1 of the notch 14f1 is narrower than the width W2 of the junction 14a.

[0049] The bonding member 13 is in contact with the gate electrode 12, the lower surface of the bonding portion 14a facing the gate electrode 12, and at least a part of the notch 14f1. The bonding member 13 is in contact with the side surface S2 of the end portion of the bonding portion 14a in the X direction. The bonding member 13 is in contact with a part of the lower surface of the bent portion 14b. In other words, the bonding member 13 covers the surface S2 of the bonding portion 14a, a part of the notch 14f1, and a part of the lower surface of the bent portion 14b. That is, the notch 14f1 has a part that is not covered by (is not in contact with) the bonding member 13.

[0050] When molten bonding material 13 is provided on gate electrode 12 and bonding portion 14a of gate terminal 14 is provided on bonding material 13, bonding portion 14a is self-aligned and positioned appropriately due to the surface tension of bonding material 13. At this time, bonding material 13 spreads and flows in all directions from between gate electrode 12 and bonding portion 14a, reaching the side surface of bonding portion 14a, notch 14f1, and the underside of bent portion 14b. In this way, due to the surface tension of bonding material 13, surface S2 of bonding portion 14a, part of notch 14f1, and part of the underside of bent portion 14b are covered by bonding material 13.

[0051] The distance D1 in the X direction from the surface S1 of the gate electrode 12 to the surface S2 of the bonding portion 14a is, for example, about 50 μm. This distance can be set to a distance that allows the bonding member 13 to cover a part of the notch 14f1 without sagging downward from one end of the gate electrode 12 due to the surface tension of the molten bonding member 13.

[0052] For example, if the height H2 from the lower surface of the bonding portion 14a to the upper surface not including the notched portion 14f1 is about 150 μm, the height H1 of the surface S2 of the bonding portion 14a is about 20 μm to 30 μm. This height can be set so that the bonding member 13 can cover a part of the notched portion 14f1 due to the surface tension of the molten bonding member 13.

[0053] The width W1 of the notch 14f1 is, for example, about 50 μm. This width can be set to a width that allows the bonding member 13 to cover a portion of the notch 14f1 without sagging downward from one end of the notch 14f1 due to the surface tension of the molten bonding member 13. Furthermore, this width can be set to a width that allows the bonding member 14a to be positioned appropriately without being pushed toward the electrode terminal 15 in the X direction due to the surface tension of the bonding member 13 covering the notch 14f1.

[0054] 5 is a cross-sectional view (a cross-sectional view taken along line III-III in FIG. 3) showing the cross-sectional structure of a portion of gate terminal 14. Note that in the example of FIG. 5, bonding member 13 in contact with the upper surface of notch 14f1 is omitted. In the following description, the side surfaces (end surfaces) of two ends of bonding portion 14a in the Y direction are referred to as "surface S3" and "surface S4," respectively.

[0055] 5, the lower surface of the bonding portion 14a is in contact with the bonding member 13. A portion of the surface S3 of the bonding portion 14a and a portion of the surface S4 of the bonding portion 14a are in contact with the bonding member 13. In other words, the bonding member 13 covers a portion of the surface S3 of the bonding portion 14a and a portion of the surface S4 of the bonding portion 14a.

[0056] The configuration according to this embodiment can improve the yield of semiconductor devices.

[0057] When the gate electrode 12 and the gate terminal 14 are joined by providing a joining member 13 on the gate electrode 12 and providing a joining portion 14a of the gate terminal 14 on the joining member 13, the joining between the gate electrode 12 and the gate terminal 14 may not be sufficient if only the lower surface of the joining portion 14a and part of the side surface of the joining portion 14a are covered with the joining member 13.

[0058] In this embodiment, the upper surface of the bonding portion 14a has a notch 14f1. The notch 14f1 is provided at least at one end of the upper surface of the bonding portion 14a in the X direction (the end farthest from the bent portion 14b). A height H1 from the lower surface of the bonding portion 14a to the lower end of the notch 14f1 is smaller than a height H2 from the lower surface of the bonding portion 14a to the upper surface excluding the notch 14f1. Therefore, due to the surface tension of the bonding member 13, not only the lower surface of the bonding portion 14a, a portion of the surface S3 of the bonding portion 14a, and a portion of the surface S4 of the bonding portion 14a, but also the surface S2 of the bonding portion 14a, a portion of the notch 14f1, and a portion of the lower surface of the bent portion 14b are covered by the bonding member 13. Therefore, the strength of the bond between the gate electrode 12 and the gate terminal 14 can be improved compared to when only the lower surface of the bonding portion 14a and a portion of the side surface of the bonding portion 14a are covered by the bonding member 13.

[0059] In addition, in the present embodiment, in the X direction, the position of the surface S2 of the bonding portion 14a does not reach the position of the surface S1 of the gate electrode 12. This prevents the bonding member 13 from hanging down from one end of the gate electrode 12 and leaving the notch 14f1 uncovered.

[0060] Furthermore, in this embodiment, the width W1 of the notch 14f1 is narrower than the width W2 of the joint 14a, so that the joint member 13 covering all or most of the notch 14f1 can prevent the joint 14a from being pushed toward the electrode terminal 15 in the X direction, which would otherwise cause the joint 14a to be positioned improperly.

[0061] Therefore, with the configuration according to this embodiment, the yield of semiconductor devices can be improved.

[0062] 1.3 Variations A semiconductor device according to a modification of the first embodiment will be described. The semiconductor device 1 according to the modification of the first embodiment differs from the first embodiment in that a groove is provided on the inclined surface Sa of the cutout portion 14f1. In the following explanation, the description of the same configuration as the first embodiment will be omitted, and the explanation will focus on the configuration that differs from the first embodiment.

[0063] 1.3.1 Gate terminal configuration The configuration of the gate terminal 14 will be described in detail with reference to Figures 6 and 7. The following description will focus on the configuration of the joint portion 14a and the notch portion 14f.

[0064] FIG. 6 is a plan view showing the configuration of a part of the gate terminal 14 (the joint portion 14a, the bent portion 14b, and the bridge portion 14c).

[0065] 6, the cutout portion 14f1 has a groove 14g. A portion of the cutout portion 14f1 (including the groove 14g) is covered by the joining member 13. The portion surrounded by the dotted line in FIG. 6 is the portion of the cutout portion 14f1 covered by the joining member 13.

[0066] FIG. 7 is a cross-sectional view (a cross-sectional view taken along line II-II in FIG. 6) showing a cross-sectional structure of a portion of the gate terminal 14. As shown in FIG.

[0067] 7, the cutout portion 14f1 has a groove 14g. The groove 14g is provided on the inclined surface Sa of the cutout portion 14f1. The groove 14g is formed by, for example, anisotropic etching. Note that the method for forming the groove 14g is not limited to this.

[0068] The position of the lower end of groove 14g does not reach the position of the lower surface of joint 14a. The position of one end of groove 14g in the X direction (the end closest to surface S2 of joint 14a) does not reach the position of surface S2 of joint 14a. In the X direction, the width of groove 14g is narrower than the width W1 of notch 14f1.

[0069] The bonding member 13 is in contact with the gate electrode 12, the lower surface of the bonding portion 14a facing the gate electrode 12, and at least a part of the notch 14f1. The bonding member 13 is in contact with the side surface S2 of the end portion in the X direction of the bonding portion 14a. The bonding member 13 is in contact with at least a part of the groove 14g. The bonding member 13 is in contact with a part of the lower surface of the bending portion 14b. In other words, the bonding member 13 covers the surface S2 of the bonding portion 14a, a part of the notch 14f1, a part of the groove 14g, and a part of the lower surface of the bending portion 14b. That is, the notch 14f1 has a part that is not covered by (is not in contact with) the bonding member 13.

[0070] In the example of FIG. 7, the joining member 13 does not cover the side surface of the groove 14g, but it may cover the side surface of the groove 14g.

[0071] The cross-sectional view taken along line III-III in FIG. 6 is similar to FIG. 5 shown in the first embodiment.

[0072] According to this modification, like the first embodiment, the yield of semiconductor devices can be improved.

[0073] In this modification, the notch 14f1 has a groove 14g. Therefore, the bonding member 13 that reaches the notch 14f1 from the underside of the bonding portion 14a and flows into the notch 14f1 is stopped by the groove 14g. This prevents the bonding member 13 from covering all or most of the notch 14f1, thereby pushing the bonding portion 14a toward the electrode terminal 15 in the X direction and causing the bonding portion 14a to be positioned improperly.

[0074] 2. Second embodiment A semiconductor device according to a second embodiment will be described. In the semiconductor device 1 according to the second embodiment, the shape of the notch 14f is different from that of the first embodiment. In the following description, the description of the same configuration as in the first embodiment will be omitted, and the description will focus on the configuration that is different from the first embodiment.

[0075] 2.1 Gate terminal configuration The configuration of the gate terminal 14 will be described in detail with reference to Figures 8 and 9. The following description will focus on the configuration of the joint portion 14a and the notch portion 14f.

[0076] FIG. 8 is a plan view showing the configuration of a part of the gate terminal 14 (the joint portion 14a, the bent portion 14b, and the bridge portion 14c).

[0077] 8, a portion of the cutout 14f (hereinafter also referred to as "cutout 14f2") is covered by the joining member 13. The portion surrounded by the dotted line in FIG. 8 is the portion of the cutout 14f2 covered by the joining member 13.

[0078] FIG. 9 is a cross-sectional view (a cross-sectional view taken along line II-II in FIG. 8) showing the cross-sectional structure of a portion of the gate terminal 14. As shown in FIG.

[0079] As shown in FIG. 9, the notch 14f2 has a curved surface. More specifically, the notch 14f2 has an arc shape with a radius R1. The arc shape is formed by, for example, anisotropic etching. However, the method for forming the arc shape is not limited to this. The radius R1 can be set to any value. The radius R1 is determined, for example, by the chemical solution used for etching.

[0080] The height H1 of the surface S2 of the junction 14a (the height from the lower surface of the junction 14a to the lower end of the notch 14f2) is smaller than the height H2 from the lower surface of the junction 14a to the upper surface excluding the notch 14f2. In the X direction, the position of the surface S2 of the junction 14a does not reach the position of the surface S1 of the gate electrode 12. In other words, the position of the side surface S2 of the X-direction end of the junction 14a is between the position of the side surface S1 of one end of the gate electrode 12 in the X direction and the position of the side surface of the other end of the gate electrode 12 in the X direction. In the X direction, the width W1 of the notch 14f2 is narrower than the width W2 of the junction 14a.

[0081] The bonding member 13 is in contact with the gate electrode 12, the lower surface of the bonding portion 14a facing the gate electrode 12, and at least a part of the notch 14f2. The bonding member 13 is in contact with the side surface S2 of the end of the bonding portion 14a in the X direction. The bonding member 13 is in contact with a part of the lower surface of the bent portion 14b. In other words, the bonding member 13 covers the surface S2 of the bonding portion 14a, a part of the notch 14f2, and a part of the lower surface of the bent portion 14b. That is, the notch 14f2 has a part that is not covered by (is not in contact with) the bonding member 13.

[0082] The distance D1 in the X direction from the surface S1 of the gate electrode 12 to the surface S2 of the junction 14a can be set to, for example, the same distance as in the first embodiment.

[0083] The height H1 of the surface S2 of the joint portion 14a can be set to, for example, the same height as in the first embodiment.

[0084] The width W1 of the cutout portion 14f2 can be set to, for example, the same width as in the first embodiment.

[0085] The cross-sectional view taken along line III-III in FIG. 8 is similar to FIG. 5 shown in the first embodiment.

[0086] According to this embodiment, similarly to the first embodiment, it is possible to improve the strength of the bond between the gate electrode 12 and the gate terminal 14. Similar to the first embodiment, it is possible to prevent the bonding member 13 from hanging down from one end of the gate electrode 12 and not covering the notch 14f2. Also, similarly to the first embodiment, it is possible to prevent the bonding portion 14a from being pushed toward the electrode terminal 15 in the X direction, which would cause the bonding portion 14a to be positioned in an inappropriate position. Therefore, it is possible to improve the yield of semiconductor devices.

[0087] 3. Third embodiment A semiconductor device according to a third embodiment will be described. In the semiconductor device 1 according to the third embodiment, the shape of the notch 14f is different from that of the first embodiment. In the following description, the description of the same configuration as in the first embodiment will be omitted, and the description will focus on the configuration that is different from the first embodiment.

[0088] 3.1 Gate terminal configuration The configuration of the gate terminal 14 will be described in detail with reference to Figures 10 and 11. The following description will focus on the configuration of the joint portion 14a and the notch portion 14f.

[0089] FIG. 10 is a plan view showing the configuration of a part of the gate terminal 14 (the joint portion 14a, the bent portion 14b, and the bridge portion 14c).

[0090] 10, a portion of the cutout 14f (hereinafter also referred to as "cutout 14f3") is covered by the joining member 13. The portion surrounded by the dotted line shown in FIG. 10 is the portion of the cutout 14f3 covered by the joining member 13.

[0091] FIG. 11 is a cross-sectional view (a cross-sectional view taken along line II-II in FIG. 10) showing a cross-sectional structure of a portion of the gate terminal 14. As shown in FIG.

[0092] 11, the notch 14f3 has a surface Sb located below the upper surface of the bonding portion 14a that does not include the notch 14f3. In other words, the upper surface of the bonding portion 14a has a step in the X direction. The surface Sb is formed by, for example, anisotropic etching. Note that the method for forming the surface Sb is not limited to this.

[0093] The height H1 of the surface S2 of the junction 14a (the height from the lower surface of the junction 14a to the lower end (surface Sb) of the notch 14f3) is smaller than the height H2 from the lower surface of the junction 14a to the upper surface excluding the notch 14f3. In the X direction, the position of the surface S2 of the junction 14a does not reach the position of the surface S1 of the gate electrode 12. In other words, the position of the side surface S2 of the X-direction end of the junction 14a is between the position of the side surface S1 of one end of the gate electrode 12 in the X direction and the position of the side surface of the other end of the gate electrode 12 in the X direction. In the X direction, the width W1 of the notch 14f3 is narrower than the width W2 of the junction 14a.

[0094] The bonding member 13 is in contact with the gate electrode 12, the lower surface of the bonding portion 14a facing the gate electrode 12, and at least a part of the notch 14f3. The bonding member 13 is in contact with the side surface S2 of the end portion of the bonding portion 14a in the X direction. The bonding member 13 is in contact with a part of the lower surface of the bent portion 14b. In other words, the bonding member 13 covers the surface S2 of the bonding portion 14a, a part of the notch 14f3, and a part of the lower surface of the bent portion 14b. That is, the notch 14f3 has a part that is not covered by (is not in contact with) the bonding member 13.

[0095] The distance D1 in the X direction from the surface S1 of the gate electrode 12 to the surface S2 of the junction 14a can be set to, for example, the same distance as in the first embodiment.

[0096] The height H1 of the surface S2 of the joint portion 14a can be set to, for example, the same height as in the first embodiment.

[0097] The width W1 of the cutout portion 14f3 can be set to, for example, the same width as in the first embodiment.

[0098] In the example of Figure 11, the joining member 13 is in contact with a surface that does not include the surface Sb of the cutout portion 14f3 (the upper surface of the joining portion 14a that does not include the cutout portion 14f3, and a surface that is approximately perpendicular to the surface Sb of the cutout portion 14f3; hereinafter referred to as "surface Sc"), but it does not have to be in contact with the surface Sc of the cutout portion 14f3.

[0099] The cross-sectional view taken along line III-III in FIG. 10 is similar to FIG. 5 shown in the first embodiment.

[0100] According to this embodiment, similarly to the first embodiment, it is possible to improve the strength of the bond between the gate electrode 12 and the gate terminal 14. Similar to the first embodiment, it is possible to prevent the bonding member 13 from hanging down from one end of the gate electrode 12 and not covering the notch 14f3. Also, similarly to the first embodiment, it is possible to prevent the bonding portion 14a from being pushed toward the electrode terminal 15 in the X direction, which would cause the bonding portion 14a to be positioned in an inappropriate position. Therefore, it is possible to improve the yield of semiconductor devices.

[0101] 3.2 Variations A semiconductor device according to a modification of the third embodiment will be described. The semiconductor device 1 according to the modification of the third embodiment differs from the third embodiment in that a groove is provided on the surface Sb of the cutout portion 14f3. In the following explanation, the description of the same configuration as the third embodiment will be omitted, and the explanation will focus on the configuration that is different from the third embodiment.

[0102] 3.2.1 Gate terminal configuration The configuration of the gate terminal 14 will be described in detail with reference to Figures 12 and 13. The following description will focus on the configuration of the joint portion 14a and the notch portion 14f.

[0103] FIG. 12 is a plan view showing the configuration of a part of the gate terminal 14 (the joint portion 14a, the bent portion 14b, and the bridge portion 14c).

[0104] 12, the cutout portion 14f3 has a groove 14h. A portion of the cutout portion 14f3 (including the groove 14h) is covered by the joining member 13. The portion surrounded by a dotted line in FIG. 12 is the portion of the cutout portion 14f3 covered by the joining member 13.

[0105] FIG. 13 is a cross-sectional view (a cross-sectional view taken along line II-II in FIG. 12) showing a cross-sectional structure of a portion of the gate terminal 14. As shown in FIG.

[0106] 13, the cutout portion 14f3 has a groove 14h. The groove 14h is provided on the surface Sb of the cutout portion 14f3. The groove 14h is formed by, for example, anisotropic etching. Note that the method for forming the groove 14h is not limited to this.

[0107] The position of the lower end of groove 14h does not reach the position of the lower surface of joint 14a. The position of one end of groove 14h in the X direction (the end closest to surface S2 of joint 14a) does not reach the position of surface S2 of joint 14a. In the X direction, the width of groove 14h is narrower than the width W1 of notch 14f3.

[0108] The bonding member 13 is in contact with the gate electrode 12, the lower surface of the bonding portion 14a facing the gate electrode 12, and at least a portion of the notch 14f3. The bonding member 13 is in contact with the side surface S2 of the end portion in the X direction of the bonding portion 14a. The bonding member 13 is in contact with at least a portion of the groove 14h. The bonding member 13 is in contact with a portion of the lower surface of the bent portion 14b. In other words, the bonding member 13 covers the surface S2 of the bonding portion 14a, a portion of the notch 14f3, a portion of the groove 14h, and a portion of the lower surface of the bent portion 14b. That is, the notch 14f3 has a portion that is not covered by (is not in contact with) the bonding member 13.

[0109] The cross-sectional view taken along line III-III in FIG. 12 is similar to FIG. 5 shown in the first embodiment.

[0110] According to this modification, like the first embodiment, the yield of semiconductor devices can be improved.

[0111] Furthermore, according to this modification, similarly to the modification of the first embodiment, it is possible to prevent the joints 14a from being pushed toward the electrode terminals 15 in the X direction, resulting in the joints 14a being positioned in an inappropriate position.

[0112] 4. Fourth embodiment A semiconductor device according to a fourth embodiment will now be described. The semiconductor device 1 according to the fourth embodiment differs from the first embodiment in that the joint portion 18a of the source terminal 18 has a notch portion 18f. In the following explanation, the description of the same configuration as in the first embodiment will be omitted, and the explanation will focus on the configuration that differs from the first embodiment.

[0113] 4.1 Configuration of semiconductor device The configuration of the semiconductor device 1 will be described with reference to Fig. 14. Fig. 14 is a plan view showing an example of the configuration of the semiconductor device 1.

[0114] As shown in Fig. 14, the upper surface of the joint 18a has a notch 18f. That is, the notch 18f refers to a part of the upper surface of the joint 18a. The notch 18f is provided on at least one end of the upper surface of the joint 18a in the X direction (the end farther from the bent portion 18b). In other words, the joint 18a has the notch 18f on at least one end of its upper surface in the X direction. The configurations of the joint 18a and the notch 18f will be described in detail later.

[0115] Other configurations of the semiconductor device 1 are the same as those shown in FIG. 1 in the first embodiment.

[0116] FIG. 15 is a cross-sectional view (a cross-sectional view taken along line IV-IV in FIG. 14) showing an example of the cross-sectional structure of the semiconductor device 1. As shown in FIG.

[0117] As shown in FIG. 15, the electrode terminal 19 is bent by a bent portion 19b so that the upper surface of the joint portion 19c is positioned higher than the upper surface of the base portion 19a.

[0118] A source electrode 16 is provided on the chip 11. A bonding member 17 is provided on the source electrode 16. A bonding portion 18a of a source terminal 18 is provided on the bonding member 17. The lower surface of the bonding portion 18a, the side surface of the X-direction end of the bonding portion 18a, and part of the notch 18f are in contact with the bonding member 17. The source terminal 18 is bent by bent portions 18b and 18d so that the upper surface of the bridge portion 18c is positioned higher than the upper surfaces of the bonding portions 18a and 18e. In the X direction, the notch 18f extends downward from the upper surface of the bonding portion 18a, not including the notch 18f.

[0119] A joint portion 18e of the source terminal 18 is provided on the joint portion 19c of the electrode terminal 19. The joint portion 18e is joined to the joint portion 19c by a joining member (not shown).

[0120] The lead frame 10, chip 11, source electrode 16, bonding member 17, source terminal 18, and electrode terminal 19 are covered with resin 30. Resin 30 is embedded in the space surrounded by the lead frame 10, chip 11, source electrode 16, bonding member 17, source terminal 18, and electrode terminal 19.

[0121] 4.2 Source terminal configuration The details of the configuration of the source terminal 18 will be described with reference to Figures 16 to 18. In the following explanation, the configurations of the joint portion 18a and the notch portion 18f will be mainly described.

[0122] FIG. 16 is a plan view showing the configuration of a part of the source terminal 18 (the joint portion 18a, the bent portion 18b, and the bridge portion 18c).

[0123] 16, the joint portion 18a is provided on the joint member 17. A portion of the cutout portion 18f is covered by the joint member 17. The portion surrounded by the dotted line in FIG. 16 is the portion of the cutout portion 18f covered by the joint member 17.

[0124] In the example of FIG. 16, of both ends of the bonding member 17 in the X direction, the end closer to the notch 18f reaches one end of the source electrode 16 in the X direction, but it does not have to reach one end of the source electrode 16 in the X direction.

[0125] 17 is a cross-sectional view (a cross-sectional view taken along line VV in FIG. 16) showing the cross-sectional structure of a portion of source terminal 18. In the following description, the side surface of the end of source electrode 16 in the X direction (the side surface (end face) of the end farther from bent portion 18b) will be referred to as "S5", and the side surface (end face) of the end of joint portion 18a in the X direction will be referred to as "surface S6".

[0126] 17, the cutout 18f has an inclined surface Sd with respect to the upper surface of the joint 18a that does not include the cutout 18f. The inclined surface Sd is formed, for example, by a method similar to the method for forming the inclined surface Sa of the cutout 14f1 shown in the first embodiment. The angle θ2 of the inclined surface Sd with respect to a plane parallel to the upper surface of the joint 18a that does not include the cutout 14f1 can be set to any value.

[0127] The height H3 of the surface S6 of the junction 18a (the height from the lower surface of the junction 18a to the lower end of the cutout 18f) is less than the height H4 from the lower surface of the junction 18a to the upper surface excluding the cutout 18f. In the X direction, the position of the surface S6 of the junction 18a does not reach the position of the surface S5 of the source electrode 16. In other words, the position of the side surface S6 of the X-direction end of the junction 18a is between the position of the side surface S5 of one end of the source electrode 16 in the X direction and the position of the side surface of the other end of the source electrode 16 in the X direction. In the X direction, the width W3 of the cutout 18f is narrower than the width W4 of the junction 18a.

[0128] The bonding member 17 is in contact with the source electrode 16, the lower surface of the bonding portion 18a facing the source electrode 16, and at least a portion of the cutout 18f. The bonding member 17 is in contact with the side surface S6 of the end of the bonding portion 18a in the X direction. The bonding member 17 is in contact with a portion of the lower surface of the bent portion 18b. In other words, the bonding member 17 covers the surface S6 of the bonding portion 18a, a portion of the cutout 18f, and a portion of the lower surface of the bent portion 18b. That is, the cutout 18f has a portion that is not covered by (is not in contact with) the bonding member 17.

[0129] When molten bonding material 17 is provided on source electrode 16 and bonding portion 18a of source terminal 18 is provided on bonding material 17, bonding portion 18a is self-aligned and positioned appropriately due to the surface tension of bonding material 17. At this time, bonding material 17 spreads and flows in all directions from between source electrode 16 and bonding portion 18a, reaching the side surface of bonding portion 18a, notch 18f, and the underside of bent portion 18b. In this way, due to the surface tension of bonding material 17, surface S6 of bonding portion 18a, part of notch 18f, and part of the underside of bent portion 18b are covered by bonding material 17.

[0130] The distance D2 in the X direction from the surface S5 of the source electrode 16 to the surface S6 of the junction 18a can be determined, for example, in the same manner as the distance D1 shown in the first embodiment.

[0131] The height H3 of the surface S6 of the joint 18a can be determined, for example, in the same manner as the height H1 shown in the first embodiment.

[0132] The width W3 of the cutout 18f can be determined in the same manner as the width W1 shown in the first embodiment, for example.

[0133] 18 is a cross-sectional view (a cross-sectional view taken along line VI-VI in FIG. 16) showing the cross-sectional structure of a portion of source terminal 18. Note that in the example of FIG. 18, bonding member 17 in contact with the upper surface of notch 18f is omitted. In the following description, the side surfaces (end surfaces) of two ends of bonding portion 18a in the Y direction are referred to as "surface S7" and "surface S8," respectively.

[0134] 18, the lower surface of bonding portion 18a is in contact with bonding member 17. A portion of surface S7 of bonding portion 18a and a portion of surface S8 of bonding portion 18a are in contact with bonding member 17. In other words, bonding member 17 covers a portion of surface S7 of bonding portion 18a and a portion of surface S8 of bonding portion 18a.

[0135] In this embodiment, the source terminal 18 has the same configuration as the gate terminal 14. Therefore, the strength of the bond between the source electrode 16 and the source terminal 18 can be improved compared to when only the lower surface of the bond portion 18a and a portion of the side surface of the bond portion 18a are covered with the bond member 17. Also, as in the first embodiment, it is possible to prevent the bond member 17 from hanging down from one end of the source electrode 16 and leaving the cutout portion 18f uncovered. Furthermore, as in the first embodiment, it is possible to prevent the bond portion 18a from being pushed toward the electrode terminal 19 in the X direction, which would cause the bond portion 18a to be positioned in an inappropriate position, by having the bond member 17 cover all or most of the cutout portion 18f.

[0136] Therefore, with the configuration according to this embodiment, the yield of semiconductor devices can be improved, similarly to the first embodiment.

[0137] The configuration of the gate terminal 14 (the configuration of the notch 14f of the joint 14a) of each of the modified example of the first embodiment, the second embodiment, the third embodiment, and the modified example of the third embodiment may be applied to the source terminal 18 of this embodiment.

[0138] 5. Modifications, etc. As described above, the semiconductor device (1) according to the embodiment includes a chip (11), a first electrode (12 / 16) provided on the chip, a first connector (14 / 18) provided above the first electrode, extending in a first direction (X), and having a joint (14a / 18a) at an end in the first direction that is joined to the first electrode, and a joint member (13 / 17) used to join the first electrode to the joint. The joint (14a / 18a) has a notch (14f / 18f) at at least one end in the first direction (X) of the upper surface of the joint. The joint member (13 / 17) is in contact with the first electrode (12 / 16), the lower surface of the joint (14a / 18a) facing the first electrode, and at least a portion of the notch (14f / 18f).

[0139] The embodiment is not limited to the above-described embodiment, and various modifications are possible.

[0140] In the above embodiment, the cutout portion has an inclined surface, a curved surface, or a surface located below the upper surface that does not include the cutout portion of the joint, but the shape of the cutout portion may be other than these.

[0141] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]

[0142] DESCRIPTION OF SYMBOLS 1...Semiconductor device, 10...Lead frame, 11...Chip, 12...Gate electrode, 13...Joint member, 14...Gate terminal, 14a...Joint portion, 14b...Bent portion, 14c...Bridge portion, 14d...Bent portion, 14e...Joint portion, 14f...Notch portion, 15...Electrode terminal, 16...Source electrode, 17...Joint member, 18...Source terminal, 18a...Joint portion, 18b...Bent portion, 18c...Bridge portion, 18d...Bent portion, 18e...Joint, 18f...Notch portion, 19...Electrode terminal, 30...Resin

Claims

1. Chips and a first electrode provided on the chip; a first connector provided above the first electrode, extending in a first direction, and having a joint portion at an end in the first direction that is joined to the first electrode; a joining member used to join the first electrode and the joining portion; Equipped with the joint portion has a notch portion at least at one end portion in the first direction of an upper surface of the joint portion, the notch has a portion that is not in contact with the joining member, the bonding member is in contact with the first electrode, a lower surface of the bonding portion facing the first electrode, and at least a part of the notch portion; Semiconductor device.

2. The joining member is in contact with a side surface of an end portion of the joining portion in the first direction. The semiconductor device according to claim 1.

3. a height from the lower surface of the joint portion to a lower end of the notch portion is lower than a height from the lower surface of the joint portion to the upper surface excluding the notch portion; The semiconductor device according to claim 1.

4. a position of a side surface of an end portion of the joint portion in the first direction is between a position of a side surface of one end portion of the first electrode in the first direction and a position of a side surface of the other end portion of the first electrode in the first direction; The semiconductor device according to claim 1.

5. the notch has an inclined surface with respect to the upper surface of the joint portion not including the notch. The semiconductor device according to claim 1.

6. The cutout portion has a curved surface. The semiconductor device according to claim 1.

7. The cutout portion has an arc shape.

7. The semiconductor device according to claim 6.

8. the cutout portion has a surface located below the upper surface of the joint portion that does not include the cutout portion; The semiconductor device according to claim 1.

9. A groove is provided in the cutout portion. The semiconductor device according to claim 1.

10. A chip; a first electrode provided on the chip; a first connector provided above the first electrode, extending in a first direction, and having a joint portion at an end in the first direction that is joined to the first electrode; a joining member used to join the first electrode and the joining portion; Equipped with the joint portion has a notch portion at least at one end portion in the first direction of an upper surface of the joint portion, A groove is provided in the cutout portion, the bonding member is in contact with the first electrode, a lower surface of the bonding portion facing the first electrode, and at least a part of the notch portion; Semiconductor device.

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