resin composition

Abstract

To provide a novel resin composition that prevents void formation during encapsulation while suppressing crack occurrence after curing.SOLUTION: A resin composition satisfies following melt viscosity and storage modulus conditions. <Melt viscosity condition> When measuring melt viscosity at 120°C, if initial melt viscosity is set as MV1 (Pa s) and melt viscosity after 2 minutes is set as MV2 (Pa s), conditions MV2 / MV1≤10 and MV2≤3000 are satisfied. <Storage modulus condition> for a cured material obtained by heating the resin composition at 150°C for 60 minutes, a storage modulus at 23°C is set as SM1 (GPa) and a storage modulus at a temperature T is set as SM2 (GPa), a condition 0.4<SM2 / SM1 is satisfied. Here, the temperature T denotes Tg-30(°C) when a glass transition temperature of the cured product is set as Tg(°C).SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to a resin composition, and further to a cured product, a semiconductor package, and a semiconductor device. [Background technology]

[0002] As a manufacturing method for semiconductor packages, the mold underfill (MUF) method is expected to contribute to miniaturization and cost reduction, as it fills the narrow gap between the semiconductor chip and the semiconductor package substrate (circuit board) and completely seals the semiconductor chip in one step using an encapsulating resin material.

[0003] On the other hand, there is an ever-increasing demand for higher integration and more functionality in electronic devices. In semiconductor packages, the number of pins is increasing, leading to smaller bump diameters, narrower pitches and narrower gaps, and the chip area is increasing due to the trend toward multi-die semiconductors. Furthermore, there is a demand for large-area packaging in one go, as in wafer-level packaging (WLP) and panel-level packaging (PLP). As the flow paths of resin materials during filling and sealing are becoming more complex, the sealing resin materials used in the MUF method (hereinafter also referred to as "mold underfill materials") are required to have even better fluidity.

[0004] As a resin composition having excellent fluidity, for example, Patent Document 1 discloses a resin composition containing a liquid epoxy resin and a specific radical polymerizable monomer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-24316 Summary of the Invention [Problem to be solved by the invention]

[0006] Sealing resin materials for semiconductor packages are required to have various properties, such as excellent dielectric properties to reduce transmission loss when operating in a high-frequency environment, and the ability to suppress warping when forming large-area sealing layers in the manufacture of WLPs and PLPs.Furthermore, these requirements are expected to become increasingly strict in the future.

[0007] While meeting these requirements, it is also desirable to reduce the diameter of the inorganic filler contained in the sealing resin material in order to achieve good filling of narrow gaps as described above. However, the inventors have found that sealing resin materials that satisfy these required properties tend to have flow marks and unfilled areas (voids) due to poor fluidity during filling and sealing, and further tend to be prone to cracks due to temperature cycles during device operation.

[0008] An object of the present invention is to provide a novel resin composition that can suppress the generation of voids during encapsulation and also suppress the generation of cracks after curing. [Means for solving the problem]

[0009] As a result of extensive investigations, the present inventors have found that the above problems can be solved by a resin composition having the following constitution, and have thus completed the present invention.

[0010] That is, the present invention includes the following. <1> A resin composition that satisfies the following melt viscosity and storage modulus conditions. <Melt viscosity conditions> When measuring the melt viscosity at 120°C, the initial melt viscosity is MV1 (Pa·s), and the melt viscosity after 2 minutes is MV2 (Pa·s). MV2 / MV1≦10 and MV2≦3000 is. <Storage modulus conditions> When the storage modulus of the cured product obtained by heating the resin composition at 150°C for 60 minutes is SM1 (GPa) at 23°C and the storage modulus of the cured product at temperature T is SM2 (GPa), 0.4 <SM2 / SM1 Here, the temperature T is Tg-30 (°C), where Tg (°C) is the glass transition temperature of the cured product. <2> Contains a silane compound (a1) represented by the following formula (A-1): <1> The resin composition according to claim 1. (RO) n SiAr 4-n (A-1) (In the formula, R represents an alkyl group, Ar represents an aryl group which may have a substituent, and n represents 1 or 2.) <3> one or more curing agents (b1) selected from acid anhydride curing agents and amine curing agents, and (c1) one or more curing accelerators selected from imidazole-based curing accelerators including at least one of <1> The resin composition according to claim 1. <4> one or more curing agents (b1) selected from acid anhydride curing agents and amine curing agents, and (c1) one or more curing accelerators selected from imidazole-based curing accelerators including at least one of <2> The resin composition according to claim 1. <5> Further containing other silane compounds (a2), <2> ~ <4> The resin composition according to any one of the above. <6> the mass ratio of the total of the curing agent (b1) and the curing accelerator (c1) to the silane compound (a1) [(curing agent (b1) + curing accelerator (c1)) / silane compound (a1)] is 1 or more; <3> ~ <5> The resin composition according to any one of the above. <7> the mass ratio of the silane compound (a2) to the silane compound (a1) (silane compound (a2) / silane compound (a1)) is 0.1 or more; <5> or <6> The resin composition according to claim 1. <8> Contains inorganic fillers with an average particle size of 3 μm or less. <1> ~ <7> The resin composition according to any one of the above. <9> including stress relievers, <1> ~ <8> The resin composition according to any one of the above. <10> For mold underfill, <1> ~ <9> The resin composition according to any one of the above. <11> <1> ~ <10> A cured product of the resin composition according to any one of the above. <12> <1> ~ <10> A semiconductor package comprising a cured product of the resin composition according to any one of the above items. <13> It is a fan-out type package. <12> The semiconductor package according to claim 1. <14> <1> ~ <10> A semiconductor device comprising a cured product of the resin composition according to any one of the above items. [Effects of the Invention]

[0011] According to the present invention, it is possible to provide a novel resin composition that can suppress the generation of voids during encapsulation and also suppress the generation of cracks after curing. DETAILED DESCRIPTION OF THE INVENTION

[0012] <Terminology> As used herein, the term "optionally substituted" in reference to a compound or group means both a case where the hydrogen atoms of the compound or group are not substituted with substituents, and a case where some or all of the hydrogen atoms of the compound or group are substituted with substituents.

[0013] The present invention will be described in detail below with reference to embodiments and examples. However, the present invention is not limited to the following embodiments and examples, and can be implemented with any modifications within the scope of the claims of the present invention and their equivalents.

[0014] [Resin composition] The resin composition of the present invention is characterized by satisfying the following melt viscosity conditions and storage modulus conditions. <Melt viscosity conditions> When measuring the melt viscosity at 120°C, the initial melt viscosity is MV1 (Pa·s), and the melt viscosity after 2 minutes is MV2 (Pa·s). MV2 / MV1≦10 and MV2≦3000 is. <Storage modulus conditions> When the storage modulus of the cured product obtained by heating the resin composition at 150°C for 60 minutes is SM1 (GPa) at 23°C and the storage modulus of the cured product at temperature T is SM2 (GPa), 0.4 <SM2 / SM1 Here, the temperature T is Tg-30 (°C), where Tg (°C) is the glass transition temperature of the cured product.

[0015] As mentioned above, various properties are required of encapsulating resin materials for semiconductor packages, such as excellent dielectric properties to reduce transmission loss during operation in high-frequency environments and the ability to suppress warpage when forming large-area encapsulating layers in the manufacture of WLPs and PLPs, and these requirements are expected to become increasingly stringent in the future. While meeting these requirements, it is also desirable to reduce the diameter of the inorganic filler contained in the encapsulating resin material in order to achieve good filling of narrow gaps in the MUF method. However, the present inventors have discovered that encapsulating resin materials that satisfy these required properties tend to have poor fluidity during filling and encapsulation, resulting in flow marks and unfilled areas (voids), and are prone to cracking due to temperature cycles during device operation.

[0016] In contrast, the resin composition of the present invention, which satisfies the above melt viscosity and storage modulus conditions, can suppress the generation of voids during encapsulation and also suppress the generation of cracks after curing.

[0017] -Melt viscosity conditions- When the melt viscosity of the resin composition of the present invention is measured at 120°C, the melt viscosity exhibits a specific time dependency.

[0018] In detail, when the melt viscosity is measured at 120°C, the initial melt viscosity is MV1 (Pa·s), and the melt viscosity after 2 minutes is MV2 (Pa·s). If MV1 and MV2 are: MV2 / MV1≦10 and MV2≦3000 Satisfy the relationship.

[0019] Here, methods for measuring and evaluating the melt viscosity of a resin composition include temperature dependency measurement (temperature dependency mode), time dependency measurement (time dependency mode), strain / frequency dependency measurement (strain dependency mode or frequency dependency mode), etc. In the present invention, in order to achieve a resin composition that can suppress the generation of voids during encapsulation and also suppress the generation of cracks after curing, it has been discovered that it is important that the melt viscosity measured in the time dependency mode under a constant temperature condition of 120°C satisfies a specific time dependency.

[0020] In the present invention, the time dependency of the melt viscosity of a resin composition is specified and evaluated based on the initial melt viscosity (MV1) (at the start of measurement, t) and the melt viscosity MV2 two minutes after the start of measurement, t. The conditions that MV1 and MV2 must satisfy are described below. These MV1 and MV2 are based on the melt viscosity values ​​at the start of measurement (t) and two minutes after the start of measurement, t, measured in a time-dependent mode using a dynamic viscoelasticity measuring device under conditions of a constant temperature of 120°C, a strain of 1 degC, and a frequency of 1 Hz, as described in <Melt Viscosity Measurement> below.

[0021] --MV2 / MV1 ratio-- From the viewpoint of achieving a resin composition that can suppress the generation of voids during encapsulation and also suppress the generation of cracks after curing, the resin composition satisfies the relationship MV2 / MV1≦10, where MV1 (Pa s) is the initial melt viscosity when the melt viscosity is measured at 120°C and MV2 (Pa s) after 2 minutes.

[0022] From the viewpoint of being able to enjoy the effects of the present invention more effectively, and in particular from the viewpoint of being able to further suppress the generation of voids during encapsulation, the MV2 / MV1 ratio is preferably 9.5 or less, 9 or less, or 8.5 or less, more preferably 8 or less, 7 or less, or 6 or less, and even more preferably 5 or less, 4 or less, 3 or less, 2.5 or less, or 2 or less. The lower limit of the MV2 / MV1 ratio is not particularly limited and may be, for example, 0.8 or more, 0.9 or more, 0.95 or more, 1 or more, etc. An MV2 / MV1 ratio of 5 or less is particularly preferable because it satisfies the storage modulus condition described below and makes it easy to achieve a resin composition that suppresses the generation of voids during encapsulation and that can also suppress the generation of cracks after curing, even when a high amount of inorganic filler with a small diameter (for example, average particle size of 3 μm or less, 2.5 μm or less, 2 μm or less, 1.5 μm or less) is blended.

[0023] --MV2 value-- From the viewpoint of achieving a resin composition that can suppress the generation of voids during encapsulation and also suppress the generation of cracks after curing, the resin composition has a melt viscosity MV2 (Pa s) after 2 minutes, when measured at 120°C, that satisfies the relationship MV2≦3000.

[0024] From the viewpoint of being able to enjoy the effects of the present invention more effectively, particularly from the viewpoint of being able to further suppress the generation of voids during encapsulation and from the viewpoint of being able to further suppress the generation of flow marks, the MV2 value is preferably 2800 or less, 2600 or less, 2400 or less, or 2200 or less, more preferably 2000 or less, 1800 or less, 1600 or less, or 1500 or less, and even more preferably 1400 or less, 1200 or less, 1000 or less, or 800 or less. The lower limit of the MV2 value is not particularly limited and may be, for example, 100 or more, 120 or more, 140 or more, 150 or more, etc. An MV2 value of 1500 or less, in particular, satisfies the storage modulus condition described below and is suitable because it is easy to achieve a resin composition that can suppress the generation of voids during encapsulation and the generation of cracks after curing, even when a high amount of inorganic filler with a small diameter (e.g., average particle size of 3 μm or less, 2.5 μm or less, 2 μm or less, or 1.5 μm or less) is blended.

[0025] The initial melt viscosity MV1 value when the melt viscosity is measured at 120°C is not particularly limited in relation to the MV2 value, as long as the MV2 / MV1 ratio satisfies the above condition.

[0026] -Storage modulus conditions- The resin composition of the present invention exhibits a specific storage modulus when cured by heating the resin composition at 150°C for 60 minutes.

[0027] Specifically, when the storage modulus of the cured product obtained by heating the resin composition at 150°C for 60 minutes is SM1 (GPa) at 23°C and SM2 (GPa) at temperature T, SM1 and SM2 satisfy the following conditions: 0.4 <SM2 / SM1 Here, the temperature T is Tg-30 (°C), where Tg (°C) is the glass transition temperature of the cured product.

[0028] The storage modulus (E') of a cured resin varies greatly depending on whether it is in a glassy or rubbery state, i.e., tends to vary greatly near the glass transition temperature. In the present invention, in order to achieve a resin composition that can suppress the generation of voids during sealing and also suppress the generation of cracks after curing, it has been discovered that it is important that the ratio of the storage modulus at 23°C of a cured product obtained by heating at 150°C for 60 minutes to the storage modulus at a temperature T (= Tg - 30) (°C) 30°C lower than the glass transition temperature Tg of the cured product be within a specific range.

[0029] In the present invention, evaluation is performed based on the ratio of the storage modulus SM1 of the cured product of the resin composition at 23°C to the storage modulus SM2 at a temperature T (=Tg - 30) which is 30°C lower than the glass transition temperature Tg of the cured product, i.e., SM2 / SM1. Hereinafter, the conditions that SM1 and SM2 should satisfy will be described. These SM1 and SM2 are based on the values of the storage modulus at 23°C and the storage modulus at the temperature T (=Tg - 30) (°C) when dynamic mechanical analysis is performed in tensile mode under the conditions of a frequency of 1 Hz and a heating rate of 5°C / min using a dynamic mechanical analyzer (dynamic viscoelasticity measuring device), as described in <Measurement of Tg and Storage Modulus> below. Note that Tg is determined as the temperature (°C) at which the maximum value of the peak of tanδ (= loss modulus E” / storage modulus E’) is shown when dynamic mechanical analysis is performed under the same conditions and in the same mode.

[0030] --SM2 / SM1 ratio-- From the viewpoint of achieving a resin composition that suppresses the generation of voids during sealing and also suppresses crack generation after curing, when the storage modulus at 23°C of the cured product obtained by heating the resin composition at 150°C for 60 minutes is SM1 (GPa) and the storage modulus at temperature T is SM2 (GPa), SM1 and SM2 satisfy the relationship of 0.4 < SM2 / SM1.

[0031] From the viewpoint of being able to enjoy the effects of the present invention more, and particularly from the viewpoint of further suppressing crack generation after curing, the SM2 / SM1 ratio is preferably 0.42 or more, or 0.44 or more, more preferably 0.45 or more, 0.46 or more, or 0.48 or more, still more preferably 0.5 or more, 0.52 or more, 0.54 or more, or 0.55 or more. The upper limit of the SM2 / SM1 ratio is not particularly limited and can be, for example, 1 or less, 0.9 or less, 0.85 or less, 0.8 or less, etc. When the above-mentioned melt viscosity conditions are satisfied, and particularly when the SM2 / SM1 ratio is 0.5 or more, even when a high content of an inorganic filler with a small diameter (for example, an average particle diameter of 3 μm or less, 2.5 μm or less, 2 μm or less, 1.5 μm or less) is used, it is suitable because it is easy to achieve a resin composition that suppresses the generation of voids during sealing and also suppresses crack generation after curing.

[0032] The SM1 value is not particularly limited as long as the above-mentioned SM2 / SM1 ratio condition is satisfied in relation to the SM2 value, but from the viewpoint of being able to enjoy the effects of the present invention more effectively in combination with the melt viscosity condition described above, it is preferably 50 GPa or less, more preferably 45 GPa or less, 40 GPa or less, 35 GPa or less, or 30 GPa or less, and even more preferably 28 GPa or less, 26 GPa or less, or 25 GPa or less. The lower limit of the SM1 value is not particularly limited and can be, for example, 3 GPa or more, 4 GPa or more, 5 GPa or more, etc.

[0033] From the viewpoint of realizing a semiconductor package exhibiting good heat resistance, the glass transition temperature Tg of the cured product obtained by heating the resin composition of the present invention at 150°C for 60 minutes is preferably 140°C or higher, more preferably 150°C or higher, and even more preferably 160°C or higher, 170°C or higher, or 180°C or higher. The upper limit of the glass transition temperature Tg is not particularly limited and can be, for example, 250°C or lower, 240°C or lower, or 230°C or lower.

[0034] The resin composition of the present invention is not particularly limited as long as it satisfies the above-mentioned melt viscosity and storage modulus conditions and is applicable to the MUF method in manufacturing semiconductor packages, i.e., as long as it exhibits fluidity under the conditions of filling and sealing and can form a sealing layer after curing.

[0035] The following describes the composition and ingredients that are suitable from the viewpoint of satisfying the above-mentioned melt viscosity and storage modulus conditions.

[0036] -Epoxy resin- The resin composition of the present invention preferably contains an epoxy resin, from the viewpoint of providing a cured product with good dielectric properties and exhibiting good fluidity during filling and sealing.

[0037] The type of epoxy resin is not particularly limited as long as it has one or more (preferably two or more) epoxy groups per molecule. Examples of epoxy resins include bisphenol-type epoxy resins, dicyclopentadiene-type epoxy resins, trisphenol-type epoxy resins, naphthol novolac-type epoxy resins, phenol novolac-type epoxy resins, tert-butyl-catechol-type epoxy resins, naphthalene-type epoxy resins, naphthol-type epoxy resins, anthracene-type epoxy resins, glycidylamine-type epoxy resins, glycidyl ester-type epoxy resins, cresol novolac-type epoxy resins, biphenyl-type epoxy resins, linear aliphatic epoxy resins, epoxy resins having a butadiene structure, alicyclic epoxy resins, heterocyclic epoxy resins, spiro ring-containing epoxy resins, cyclohexane-type epoxy resins, cyclohexanedimethanol-type epoxy resins, naphthylene ether-type epoxy resins, trimethylol-type epoxy resins, and tetraphenylethane-type epoxy resins. Bisphenol-type epoxy resins refer to epoxy resins having a bisphenol structure, such as bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, bisphenol S-type epoxy resins, and bisphenol AF-type epoxy resins. Biphenyl-type epoxy resins refer to epoxy resins having a biphenyl structure, where the biphenyl structure may have a substituent such as an alkyl group, an alkoxy group, or an aryl group. Therefore, bixylenol-type epoxy resins and biphenylaralkyl-type epoxy resins are also included in biphenyl-type epoxy resins. Epoxy resins may be used alone or in combination of two or more.

[0038] Epoxy resins include those that are liquid at a temperature of 20°C (hereinafter referred to as "liquid epoxy resins") and those that are solid at a temperature of 20°C (hereinafter referred to as "solid epoxy resins"). From the viewpoint of realizing a resin composition that exhibits good fluidity during filling and sealing, it is preferable that the epoxy resin contains a liquid epoxy resin. In one embodiment, when the total amount of epoxy resins (non-volatile components) is taken as 100% by mass, the content of the liquid epoxy resin is suitably 70% by mass or more (preferably 80% by mass or more, 90% by mass or more).

[0039] The liquid epoxy resin is preferably a liquid epoxy resin having two or more epoxy groups in one molecule.

[0040] Preferred liquid epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol AF type epoxy resins, naphthalene type epoxy resins, glycidyl ester type epoxy resins, glycidyl amine type epoxy resins, phenol novolac type epoxy resins, alicyclic epoxy resins such as alicyclic epoxy resins having an ester skeleton, cyclohexane type epoxy resins, and cyclohexane dimethanol type epoxy resins.

[0041] Specific examples of liquid epoxy resins include "HP4032", "HP4032D", and "HP4032SS" (naphthalene type epoxy resins) manufactured by DIC Corporation; "828US", "828EL", "jER828EL", and "825" (bisphenol A type epoxy resins) manufactured by Mitsubishi Chemical Corporation; "jER807" and "1750" (bisphenol F type epoxy resins) manufactured by Mitsubishi Chemical Corporation; "jER152" (phenol novolac type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "630", "630LSD", and "604" (glycidylamine type epoxy resins) manufactured by Mitsubishi Chemical Corporation; "ED-523T" (glycirol type epoxy resin) manufactured by ADEKA Corporation; and "EP-3950L" and "EP -3980S" (glycidylamine type epoxy resin); ADEKA's "EP-4088S" (dicyclopentadiene type epoxy resin); Nippon Steel Chemical & Material's "ZX1059" (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin); Nagase ChemteX's "EX-721" (glycidyl ester type epoxy resin); Daicel's "Celloxide 2021P" (alicyclic epoxy resin with an ester skeleton); Nippon Steel Chemical & Material's "ZX1658" and "ZX1658GS" (1,4-glycidylcyclohexane type epoxy resin), and Mitsubishi Chemical's "YX8000" (hydrogenated bisphenol A type epoxy resin).

[0042] The epoxy equivalent of the epoxy resin is preferably in the range of 50 g / eq. to 300 g / eq., with the upper limit being more preferably 250 g / eq. or less, and even more preferably 240 g / eq. or less, 220 g / eq. or less, 200 g / eq. or less, or 180 g / eq. or less. The epoxy group equivalent is the mass of the resin per equivalent of epoxy groups. This epoxy equivalent can be measured in accordance with JIS K7236.

[0043] From the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity and storage modulus conditions, the content of the epoxy resin in the resin composition is preferably 5% by mass or more, more preferably 10% by mass or more, and even more preferably 15% by mass or more, 20% by mass or more, 22% by mass or more, 24% by mass or more, or 25% by mass or more, based on 100% by mass of the resin components in the resin composition. The upper limit of the content is not particularly limited and may be determined depending on the properties required of the resin composition, but may be, for example, 90% by mass or less, 80% by mass or less, 70% by mass or less, or 60% by mass or less.

[0044] In the present invention, the term "resin component" in relation to the resin composition refers to the non-volatile components constituting the resin composition excluding the inorganic filler described below.

[0045] -Inorganic filler- The resin composition of the present invention preferably contains an inorganic filler, which can provide a cured product exhibiting good dielectric properties (low dielectric dissipation factor) and can also suppress warpage when forming a large-area sealing layer in the production of WLP or PLP.

[0046] Examples of inorganic filler materials include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, aluminum silicate, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium titanate zirconate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Among these, silica is particularly preferred. Examples of silica include amorphous silica, fused silica, crystalline silica, synthetic silica, and hollow silica. Spherical silica is preferred. The inorganic fillers may be used alone or in combination of two or more.

[0047] Commercially available inorganic fillers include, for example, "SP60-05" and "SP507-05" manufactured by Nippon Steel Chemical & Material Co., Ltd.; "YC100C," "YA050C," "YA050C-MJE," "YA010C," "SC2500SQ," "SO-C4," "SO-C2," and "SO-C1" manufactured by Admatechs Co., Ltd.; "UFP-30," "DAW-03," and "FB-105FD" manufactured by Denka Co., Ltd.; "Silfil NSS-3N," "Silfil NSS-4N," and "Silfil NSS-5N" manufactured by Tokuyama Corporation; "CellSpheres" and "MGH-005" manufactured by Taiheiyo Cement Corporation; and "Sferique" and "BA-1" manufactured by JGC Catalysts and Chemicals Co., Ltd.

[0048] The average particle size of the inorganic filler is preferably 10 μm or less, more preferably 5 μm or less, and even more preferably 3 μm or less, from the viewpoint of achieving good filling of narrow gaps. As mentioned above, the present inventors have discovered that encapsulating resin materials containing small-diameter inorganic fillers tend to develop flow marks and unfilled areas (voids) due to poor fluidity during filling and encapsulation, and are prone to cracking due to temperature cycles during device operation. In contrast, the resin composition of the present invention, which satisfies the above-mentioned melt viscosity and storage modulus conditions, can suppress the generation of voids during filling and encapsulation, and can suppress the generation of cracks after curing, allowing the use of smaller-diameter inorganic fillers. For example, the average particle size of the inorganic filler may be as small as 2.5 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.7 μm or less. The lower limit of the average particle size is not particularly limited, but is preferably 0.01 μm or more, more preferably 0.05 μm or more, and even more preferably 0.07 μm or more, 0.1 μm or more, or 0.2 μm or more.

[0049] The average particle size of inorganic fillers can be measured using a laser diffraction / scattering method based on Mie scattering theory. Specifically, a volumetric particle size distribution of the inorganic filler is created using a laser diffraction / scattering particle size distribution analyzer, and the median diameter is used as the average particle size. A measurement sample can be prepared by weighing 100 mg of inorganic filler and 10 g of methyl ethyl ketone into a vial and dispersing the mixture ultrasonically for 10 minutes. The volumetric particle size distribution of the inorganic filler was measured using a laser diffraction particle size distribution analyzer with blue and red wavelength light sources using a flow cell system, and the average particle size was calculated as the median diameter from the particle size distribution obtained. Examples of laser diffraction particle size distribution analyzers include the LA-960 manufactured by Horiba, Ltd.

[0050] The specific surface area of ​​the inorganic filler is not particularly limited, but is preferably 0.1 m 2 / g or more, more preferably 0.5m 2 / g or more, more preferably 1m 2 / g or more, 3m2 / g or more or 5m 2 The upper limit of the specific surface area is not particularly limited, but is preferably 80 m 2 / g or less, more preferably 60m 2 / g or less, more preferably 50m 2 / g or less or 40m 2 The specific surface area of ​​the inorganic filler is obtained by adsorbing nitrogen gas onto the surface of a sample using a specific surface area measuring device (Macsorb HM-1210 manufactured by Mountech Co., Ltd.) according to the BET method, and then calculating the specific surface area using the BET multipoint method.

[0051] The inorganic filler is preferably surface-treated with an appropriate surface treatment agent. The surface treatment can improve the moisture resistance and dispersibility of the inorganic filler. Various silane compounds may be used as the surface treatment agent, including, for example, vinyl-based silane coupling agents, epoxy-based silane coupling agents, styryl-based silane coupling agents, (meth)acrylic-based silane coupling agents, amino-based silane coupling agents, isocyanurate-based silane coupling agents, ureido-based silane coupling agents, mercapto-based silane coupling agents, isocyanate-based silane coupling agents, and acid anhydride-based silane coupling agents; alkoxysilane compounds such as methyltrimethoxysilane and phenyltrimethoxysilane; and silazane compounds. The surface treatment agents may be used alone or in combination of two or more.

[0052] Commercially available surface treatment agents include, for example, "KBM403" (3-glycidoxypropyltrimethoxysilane), "KBM803" (3-mercaptopropyltrimethoxysilane), "KBE903" (3-aminopropyltriethoxysilane), "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane), and "SZ-31" (hexamethyldisilazane), all manufactured by Shin-Etsu Chemical Co., Ltd.

[0053] The degree of surface treatment with the surface treatment agent is preferably within a predetermined range from the viewpoint of improving the dispersibility of the inorganic filler. Specifically, 100% by mass of the inorganic filler is preferably surface-treated with 0.2 to 5% by mass of the surface treatment agent.

[0054] The degree of surface treatment with the surface treatment agent can be evaluated by the amount of carbon per unit surface area of ​​the inorganic filler. From the viewpoint of improving the dispersibility of the inorganic filler, the amount of carbon per unit surface area of ​​the inorganic filler is set to 0.02 mg / m 2 More than 0.1 mg / m is preferable. 2 More preferably, 0.2 mg / m or more 2 On the other hand, from the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity conditions by suppressing an increase in the melt viscosity of the resin composition, it is more preferable that the melt viscosity be 1.0 mg / m 2 Less than 0.8 mg / m is preferred 2 Less than 0.5 mg / m is more preferable. 2 The following is even more preferred. The carbon amount per unit surface area of ​​the inorganic filler can be measured after the surface-treated inorganic filler is washed with a solvent (e.g., methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler that has been surface-treated with a surface treatment agent, and ultrasonic cleaning is performed at 25°C for 5 minutes. After removing the supernatant and drying the solid content, the carbon amount per unit surface area of ​​the inorganic filler can be measured using a carbon analyzer. The carbon analyzer that can be used is the "EMIA-320V" manufactured by Horiba, Ltd.

[0055] From the viewpoint of easily realizing a resin composition that provides an even lower dielectric tangent and thermal expansion coefficient, the content of the inorganic filler in the resin composition is, for example, 50% by mass or more, preferably 60% by mass or more, more preferably 65% ​​by mass or more, and even more preferably 70% by mass or more, 75% by mass or more, 76% by mass or more, 78% by mass or more, or 80% by mass or more, when the nonvolatile components in the resin composition are taken as 100% by mass. The upper limit of the content of the inorganic filler is not particularly limited, but can be, for example, 90% by mass or less, 85% by mass or less, etc.

[0056] -Silane compounds- The resin composition of the present invention preferably contains a silane compound from the viewpoint of achieving good filling properties for narrow gaps.

[0057] From the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity and storage modulus conditions, the silane compound is preferably a silane compound (a1) represented by the following formula (A-1). (RO) n SiAr 4-n (A-1) (In the formula, R represents an alkyl group, Ar represents an aryl group which may have a substituent, and n represents 1 or 2.)

[0058] The alkyl group represented by R may be either linear or branched. The number of carbon atoms in the alkyl group is preferably 1 to 10, more preferably 1 to 6, and even more preferably 1 to 4. Among these, the alkyl group is even more preferably one or more selected from a methyl group, an ethyl group, a propyl group, an isopropyl group, and a cyclopropyl group.

[0059] The number of carbon atoms in the aryl group in Ar is preferably 6 to 14, more preferably 6 to 10. The substituent that the aryl group may have is preferably one or more selected from the group consisting of a halogen atom, an alkyl group, an alkoxy group, and a cycloalkyl group, and more preferably one or more selected from the group consisting of a fluorine atom, an alkyl group having 1 to 10 carbon atoms (preferably 1 to 6, 1 to 4), an alkoxy group having 1 to 10 carbon atoms (preferably 1 to 6, 1 to 4), and a cycloalkyl group having 3 to 10 carbon atoms (preferably 6 to 10).

[0060] n is preferably 2.

[0061] Examples of the silane compound (a1) include diphenyldialkoxysilanes such as diphenyldimethoxysilane, diphenyldiethoxysilane, diphenyldipropoxysilane, diphenylmethoxyethoxysilane, diphenylmethoxypropoxysilane, and diphenylethoxypropoxysilane; and triphenylalkoxysilanes such as triphenylmethoxysilane, triphenylethoxysilane, and triphenylpropoxysilane; of which diphenyldialkoxysilanes are preferred, and diphenyldimethoxysilane is more preferred.

[0062] The resin composition of the present invention may contain, as the silane compound, a silane compound (a2) different from the silane compound (a1).

[0063] The other silane compound (a2) is not particularly limited, and examples thereof include silane coupling agents such as vinyl silane coupling agents, epoxy silane coupling agents, styryl silane coupling agents, (meth)acrylic silane coupling agents, amino silane coupling agents, isocyanurate silane coupling agents, ureido silane coupling agents, mercapto silane coupling agents, isocyanate silane coupling agents, and acid anhydride silane coupling agents. Thus, in one embodiment, the resin composition of the present invention contains, as the silane compound (a2), a silane compound containing one or more reactive groups selected from the group consisting of a vinyl group, an epoxy group, a styryl group, a (meth)acrylic group, an amino group, an isocyanurate group, a ureido group, a mercapto group, an isocyanate group, and an acid anhydride group.

[0064] Among these, from the viewpoint of easily realizing a resin composition that satisfies the above-mentioned melt viscosity and storage modulus conditions in combination with the silane compound (a1), as the silane compound (a2), a silane compound containing one or more reactive groups selected from the group consisting of a vinyl group, an epoxy group, a styryl group, a (meth)acrylic group, and an amino group is preferred, and a silane compound containing one or more reactive groups selected from the group consisting of an epoxy group and an amino group is more preferred.

[0065] When the resin composition of the present invention contains a silane compound, the content of the silane compound in the resin composition is preferably 0.5% by mass or more, more preferably 0.6% by mass or more, 0.8% by mass or more, 1% by mass or more, 1.2% by mass or more, 1.4% by mass or more, or 1.5% by mass or more, based on 100% by mass of the resin components in the resin composition, from the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity and storage modulus conditions. The upper limit of the content of the silane compound is preferably 5% by mass or less, more preferably 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, or 3% by mass or less, from the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity and storage modulus conditions.

[0066] As described above, from the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity and storage modulus conditions, the silane compound preferably contains silane compound (a1), and more preferably contains a combination of silane compound (a1) and silane compound (a2). From the viewpoint of easily satisfying the above melt viscosity and storage modulus conditions and more easily enjoying the effects of the present invention, the mass ratio of silane compound (a2) to silane compound (a1) (silane compound (a2) / silane compound (a1)) is preferably 0.1 or more, more preferably 0.2 or more, even more preferably 0.3 or more, 0.4 or more, or 0.5 or more, with the upper limit being preferably 2 or less, more preferably 1.8 or less, 1.6 or less, or 1.5 or less.

[0067] - Hardener - The resin composition of the present invention preferably contains a curing agent.

[0068] The curing agent is not particularly limited as long as it has the function of curing the epoxy resin, and examples thereof include acid anhydride curing agents, amine curing agents, phenolic curing agents, naphthol curing agents, active ester curing agents, benzoxazine curing agents, cyanate ester curing agents, and carbodiimide curing agents. One type of curing agent may be used alone, or two or more types may be used in combination.

[0069] In particular, from the viewpoint of realizing a resin composition that exhibits good fluidity during filling and sealing, and from the viewpoint of easily realizing a resin composition that preferably satisfies the above-mentioned melt viscosity condition and storage modulus condition, it is preferable that the curing agent contains one or more curing agents (b1) selected from the group consisting of acid anhydride-based curing agents and amine-based curing agents.

[0070] Suitable acid anhydride curing agents as the curing agent (b1) include curing agents having one or more acid anhydride groups in one molecule.

[0071] Specific examples of acid anhydride curing agents include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, hydrogenated methylnadic anhydride, trialkyltetrahydrophthalic anhydride, dodecenyl succinic anhydride, 5-(2,5-dioxotetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, trimellitic anhydride, pyromellitic anhydride, and benzophenonetetracarboxylic dianhydride. Examples of suitable anhydrides include anhydrides, biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, oxydiphthalic dianhydride, 3,3'-4,4'-diphenylsulfonetetracarboxylic dianhydride, 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-C]furan-1,3-dione, ethylene glycol bis(anhydrotrimellitate), and polymeric anhydrides such as styrene-maleic acid resins, which are copolymers of styrene and maleic acid.

[0072] Commercially available acid anhydride curing agents include "HNA-100" and "MH-700" manufactured by New Japan Chemical Co., Ltd.

[0073] Suitable amine-based curing agents (b1) include curing agents having one or more amino groups in one molecule, such as aliphatic amines, polyether amines, alicyclic amines, and aromatic amines.

[0074] Specific examples of amine-based curing agents include 4,4'-methylenebis(2,6-dimethylaniline), diphenyldiaminosulfone, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, m-phenylenediamine, m-xylylenediamine, diethyltoluenediamine, 4,4'-diaminodiphenyl ether, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dihydroxybenzidine, and 2,2-bis(3-amino-4-hydroxybenzoyl). bis(4-aminophenoxy)biphenyl)propane, 3,3-dimethyl-5,5-diethyl-4,4-diphenylmethanediamine, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-(4-aminophenoxy)phenyl)propane, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 4,4'-bis(4-aminophenoxy)biphenyl, bis(4-(4-aminophenoxy)phenyl)sulfone, bis(4-(3-aminophenoxy)phenyl)sulfone, and the like.

[0075] Commercially available amine-based curing agents include, for example, "KAYABOND C-200S," "KAYABOND C-100," "KAYAHARD AA," "KAYAHARD AB," and "KAYAHARD AS" manufactured by Nippon Kayaku Co., Ltd., and "Epicure W" manufactured by Mitsubishi Chemical Corporation.

[0076] The curing agent may also include one or more curing agents (b2) selected from the group consisting of phenol-based curing agents, naphthol-based curing agents, active ester-based curing agents, benzoxazine-based curing agents, cyanate ester-based curing agents, and carbodiimide-based curing agents.

[0077] As the phenol-based curing agent and naphthol-based curing agent, those having a novolac structure are preferred from the viewpoint of heat resistance and water resistance. Furthermore, from the viewpoint of adhesion to the conductor layer, nitrogen-containing phenol-based curing agents and nitrogen-containing naphthol-based curing agents are preferred, and triazine skeleton-containing phenol-based curing agents and triazine skeleton-containing naphthol-based curing agents are more preferred. Specific examples of phenol-based curing agents and naphthol-based curing agents include "MEH-7700", "MEH-7810", "MEH-7851", and "MEH-8000H" manufactured by Meiwa Chemical Industry Co., Ltd.; "NHN", "CBN", and "GPH" manufactured by Nippon Kayaku Co., Ltd.; and "SN-170", "SN-180", "SN-190", "SN-475", "SN-485", "SN-495", "SN-495V", and "SN-37" manufactured by Nippon Steel Chemical & Material Co., Ltd. 5" and "SN-395" manufactured by DIC Corporation; "TD-2090", "TD-2090-60M", "LA-7052", "LA-7054", "LA-1356", "LA-3018", "LA-3018-50P", "EXB-9500", "HPC-9500", "KA-1160", "KA-1163", and "KA-1165" manufactured by Gun-ei Chemical Co., Ltd.; and "GDP-6115L", "GDP-6115H", and "ELPC75" manufactured by Gun-ei Chemical Co., Ltd.

[0078] As the active ester curing agent, a compound having one or more active ester groups per molecule can be used. Among them, preferred active ester curing agents are compounds having two or more highly reactive ester groups per molecule, such as phenol esters, thiophenol esters, N-hydroxyamine esters, and esters of heterocyclic hydroxy compounds. The active ester curing agent is preferably one obtained by a condensation reaction between a carboxylic acid compound and / or a thiocarboxylic acid compound and a hydroxy compound and / or a thiol compound. In particular, from the viewpoint of improving heat resistance, active ester curing agents derived from carboxylic acid compounds are preferred, active ester curing agents obtained from a carboxylic acid compound and a hydroxy compound are more preferred, and active ester curing agents obtained from a carboxylic acid compound and an aromatic hydroxy compound are even more preferred. The carboxylic acid compound may be either an aromatic carboxylic acid compound or an aliphatic carboxylic acid compound, and examples thereof include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromellitic acid, and halides thereof. Examples of aromatic hydroxy compounds include (i) polyaddition products of unsaturated aliphatic cyclic compounds containing two double bonds per molecule with phenols, (ii) various bisphenol compounds, (iii) aromatic polyols having two or more hydroxy groups bonded to a carbon atom on an aromatic ring, and (iv) aromatic monools having one hydroxy group bonded to a carbon atom on an aromatic ring. Examples of polyaddition products of unsaturated aliphatic cyclic compounds with phenols include polyaddition products of unsaturated aliphatic cyclic compounds such as dicyclopentadiene, tetrahydroindene, norbornadiene, limonene, and vinylcyclohexene with optionally substituted phenols (e.g., phenol, cresol, xylenol, ethylphenol, propylphenol, vinylphenol, allylphenol, phenylphenol, benzylphenol, and halophenols), and specific examples thereof include dicyclopentadiene-phenol polyaddition products. Examples of bisphenol compounds include bisphenol A, bisphenol F, bisphenol AF, bisphenol AP, bisphenol B, bisphenol BP, bisphenol C, and bisphenol M. Examples of aromatic polyols in which two or more hydroxy groups are bonded to carbon atoms on an aromatic ring include hydroquinone, resorcinol, catechol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, benzenetriol, and phenol novolak. Examples of aromatic monools having one hydroxy group bonded to a carbon atom on an aromatic ring include phenol, cresol, xylenol, ethylphenol, propylphenol, vinylphenol, allylphenol, phenylphenol, benzylphenol, halophenols, naphthol, methylnaphthol, dimethylnaphthol, ethylnaphthol, propylnaphthol, vinylnaphthol, allylnaphthol, phenylnaphthol, benzylnaphthol, and halonaphthol.

[0079] Specific examples of the active ester resin include active ester resins containing a dicyclopentadiene-type diphenol structure, active ester resins containing a naphthalene structure, active ester resins containing an acetylated product of phenol novolac, and active ester resins containing a benzoylated product of phenol novolac. Commercially available active ester curing agents include active ester resins containing a dicyclopentadiene-type diphenol structure such as "EXB-9451", "EXB-9460", "EXB-9460S", "HPC-8000-65T", "HPC-8000H-65TM", and "HPC-8000L-65TM" (manufactured by DIC Corporation); active ester resins containing a naphthalene structure such as "EXB-8100L-65T", "EXB-8150-60T", "EXB-8150-62T", "EXB-9416-70BK", "HPC-8150-60T", and "HPC-8150-62T"; Examples of such active ester resins include "HP-B-8151-62T" and "HP-C-8151-62T" (manufactured by DIC Corporation); "EXB9401" (manufactured by DIC Corporation) as a phosphorus-containing active ester resin; "DC808" (manufactured by Mitsubishi Chemical Corporation) as an active ester resin which is an acetylated product of phenol novolac; "YLH1026," "YLH1030," and "YLH1048" (manufactured by Mitsubishi Chemical Corporation) as active ester resins which are benzoylated products of phenol novolac; and "PC1300-02-65MA" (manufactured by Air Water Inc.) as an active ester resin containing a styryl group and a naphthalene structure.

[0080] In particular, from the viewpoint of easily realizing a resin composition that satisfies the above-mentioned melt viscosity and storage modulus conditions, it is preferable that the active ester curing agent contains an ethylenically unsaturated bond-containing group. The ethylenically unsaturated bond-containing group is preferably an alkenyl group which may have a substituent, an alkenylaryl group which may have a substituent, or an arylalkenyl group which may have a substituent. From the viewpoint of better enjoying the effects of the present invention, the number of carbon atoms in the alkenyl group is preferably 2 or more or 3 or more, and the upper limit is preferably 10 or less, more preferably 8 or less, 6 or less, or 4 or less. From the viewpoint of better enjoying the effects of the present invention, the number of carbon atoms in the arylalkenyl group or alkenylaryl group is preferably 8 or more, and the upper limit is preferably 20 or less, more preferably 18 or less, 16 or less, 14 or less, or 12 or less. Furthermore, from the viewpoint of being able to enjoy the effects of the present invention more effectively, the substituent is preferably an alkyl group, an alkoxy group, an aryl group, or a hydroxy group, and more preferably an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a hydroxy group.

[0081] From the viewpoint of being able to enjoy the effects of the present invention more effectively, it is preferable that the active ester curing agent contains two or more ethylenically unsaturated bond-containing groups in the molecule. Also, from the viewpoint of being able to enjoy the effects of the present invention more effectively, the ethylenically unsaturated bond equivalent of the active ester curing agent is preferably 500 g / eq or less, more preferably 450 g / eq or less, or 400 g / eq or less, and the lower limit thereof is preferably 150 g / eq or more, more preferably 160 g / eq or more, or 180 g / eq or more.

[0082] As mentioned above, the active ester curing agent can be synthesized by reacting a carboxylic acid compound with an aromatic hydroxy compound, but the active ester curing agent containing an ethylenically unsaturated bond-containing group can be synthesized by using a compound containing an ethylenically unsaturated bond-containing group as a raw material compound. In particular, from the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity condition and storage modulus condition, the aromatic monool that constitutes the molecular chain terminal structure of the active ester curing agent is preferably an aromatic monool containing an ethylenically unsaturated bond-containing group, such as a C2-C 10 Alkenylphenols (vinylphenol, allylphenol, etc.), C2-C 10 It is preferable to synthesize the active ester curing agent using an alkenyl naphthol (vinyl naphthol, allyl naphthol, etc.). Therefore, in a preferred embodiment, the active ester curing agent is an ethylenically unsaturated bond-containing group (preferably C2-C 10 Alkenyl-C6-C 14 aryl group) in the molecule (preferably at the molecular chain terminal).

[0083] Specific examples of benzoxazine-based curing agents include "JBZ-OD100" (benzoxazine ring equivalent: 218), "JBZ-OP100D" (benzoxazine ring equivalent: 218), and "ODA-BOZ" (benzoxazine ring equivalent: 218) manufactured by JFE Chemical Corporation; "Pd" (benzoxazine ring equivalent: 217) and "Fa" (benzoxazine ring equivalent: 217) manufactured by Shikoku Chemicals Corporation; and "HFB2006M" (benzoxazine ring equivalent: 432) manufactured by Showa Polymer Co., Ltd.

[0084] Examples of cyanate ester curing agents include bifunctional cyanate resins such as bisphenol A dicyanate, polyphenol cyanate, oligo(3-methylene-1,5-phenylene cyanate), 4,4'-methylenebis(2,6-dimethylphenyl cyanate), 4,4'-ethylidene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane, 1,3-bis(4-cyanatephenyl-1-(methylethylidene))benzene, bis(4-cyanatephenyl)thioether, and bis(4-cyanatephenyl)ether; polyfunctional cyanate resins derived from phenol novolac, cresol novolac, etc.; and prepolymers in which these cyanate resins are partially converted to triazine. Specific examples of cyanate ester curing agents include "PT30" and "PT60" (phenol novolac type multifunctional cyanate ester resins), "ULL-950S" (multifunctional cyanate ester resin), "BA230" and "BA230S75" (prepolymers in which part or all of bisphenol A dicyanate has been triazine converted to a trimer), all of which are manufactured by Lonza Japan.

[0085] Specific examples of carbodiimide-based curing agents include Carbodilite (registered trademark) V-03 (carbodiimide group equivalent: 216 g / eq.), V-05 (carbodiimide group equivalent: 262 g / eq.), V-07 (carbodiimide group equivalent: 200 g / eq.), and V-09 (carbodiimide group equivalent: 200 g / eq.), all manufactured by Nisshinbo Chemical Inc.; and Stavaxol (registered trademark) P (carbodiimide group equivalent: 302 g / eq.), all manufactured by Rhein Chemie.

[0086] When the resin composition of the present invention contains a curing agent, the content of the curing agent in the resin composition is preferably 10% by mass or more, more preferably 15% by mass or more, even more preferably 20% by mass or more, 25% by mass or more, or 30% by mass or more, when the resin component in the resin composition is 100% by mass. The upper limit of the content of the curing agent is preferably 70% by mass or less, more preferably 65% ​​by mass or less, 60% by mass or less, or 55% by mass or less.

[0087] As described above, from the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity and storage modulus conditions, the curing agent preferably contains one or more curing agents (b1) selected from the group consisting of acid anhydride curing agents and amine curing agents. From the viewpoint of easily achieving the above melt viscosity and storage modulus conditions and more easily enjoying the effects of the present invention, when the total amount of the curing agent (non-volatile components) is taken as 100 mass%, the content of the curing agent (b1) is preferably 50 mass% or more, more preferably 60 mass% or more, 70 mass% or more, or 80 mass% or more, and the upper limit is not particularly limited and may be 100 mass%.

[0088] -Curing accelerator- The resin composition of the present invention preferably contains a curing accelerator.

[0089] Examples of the curing accelerator include imidazole-based curing accelerators, phosphorus-based curing accelerators, amine-based curing accelerators, guanidine-based curing accelerators, metal-based curing accelerators, peroxide-based curing accelerators, etc. The curing accelerators may be used alone or in combination of two or more.

[0090] In particular, from the viewpoint of realizing a resin composition that exhibits good fluidity during filling and sealing, and from the viewpoint of easily realizing a resin composition that preferably satisfies the above-mentioned melt viscosity condition and storage modulus condition, it is preferable that the curing accelerator contains one or more curing accelerators (c1) selected from the group consisting of imidazole-based curing accelerators.

[0091] Suitable imidazole curing accelerators (c1) include, for example, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, and 1-benzyl-2-methylimidazole. 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methyl Imidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid Examples thereof include imidazole compounds such as acid adducts, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, and 2-phenylimidazoline, as well as adducts of imidazole compounds with epoxy resins.

[0092] As the imidazole-based curing accelerator, commercially available products may be used, and examples thereof include "P200-H50" manufactured by Mitsubishi Chemical Corporation, and "Curezol 2MZ", "2E4MZ", "Cl1Z", "Cl1Z-CN", "Cl1Z-CNS", "Cl1Z-A", "2MZ-OK", "2MA-OK", "2MA-OK-PW", and "2PHZ" manufactured by Shikoku Chemicals Corporation.

[0093] The curing accelerator may also include one or more curing accelerators (c2) selected from the group consisting of phosphorus-based curing accelerators, amine-based curing accelerators, guanidine-based curing accelerators, metal-based curing accelerators, and peroxide-based curing accelerators.

[0094] Examples of phosphorus-based curing accelerators include triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, etc. Commercially available products may be used as the phosphorus-based curing accelerator, and examples thereof include "TBP-DA" manufactured by Hokko Chemical Industry Co., Ltd.

[0095] Examples of the amine curing accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 1,8-diazabicyclo(5,4,0)-undecene, 1,8-diazabicyclo[5,4,0]undecene-7,4-dimethylaminopyridine, and 2,4,6-tris(dimethylaminomethyl)phenol.

[0096] Examples of guanidine curing accelerators include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7-methyl-1,5,7-triazabicyclo[4.4.0]dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, and 1-(o-tolyl)biguanide.

[0097] Examples of metal-based curing accelerators include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of organometallic complexes include organic cobalt complexes such as cobalt(II) acetylacetonate and cobalt(III) acetylacetonate, organic copper complexes such as copper(II) acetylacetonate, organic zinc complexes such as zinc(II) acetylacetonate, organic iron complexes such as iron(III) acetylacetonate, organic nickel complexes such as nickel(II) acetylacetonate, and organic manganese complexes such as manganese(II) acetylacetonate. Examples of organometallic salts include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

[0098] When the resin composition of the present invention contains a curing accelerator, the content of the curing accelerator in the resin composition is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, even more preferably 0.5% by mass or more, 0.6% by mass or more, 0.8% by mass or more, or 1% by mass or more, when the resin component in the resin composition is 100% by mass. The upper limit of the content of the curing accelerator is preferably 5% by mass or less, more preferably 4% by mass or less, 3.5% by mass or less, or 3% by mass or less.

[0099] As described above, from the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity and storage modulus conditions, the curing accelerator preferably contains one or more curing accelerators (c1) selected from the group consisting of imidazole curing accelerators. From the viewpoint of easily achieving the above melt viscosity and storage modulus conditions and more easily enjoying the effects of the present invention, when the total amount (non-volatile components) of the curing accelerator is taken as 100 mass%, the content of the curing accelerator (c1) is preferably 50 mass% or more, more preferably 60 mass% or more, 70 mass% or more, or 80 mass% or more, and the upper limit is not particularly limited and may be 100 mass%.

[0100] As described above, from the viewpoint of easily realizing a resin composition that satisfies the above melt viscosity condition and storage modulus condition, the resin composition of the present invention preferably contains a curing agent (b1) and a curing accelerator (c1). One or more curing agents (b1) selected from the group consisting of acid anhydride curing agents and amine curing agents, and (c1) one or more curing accelerators selected from the group consisting of imidazole curing accelerators It includes at least one of the following.

[0101] As described above, the resin composition of the present invention preferably contains a silane compound (a1) in order to easily realize a resin composition that satisfies the melt viscosity and storage modulus requirements. Therefore, in a preferred embodiment, the resin composition of the present invention contains the silane compound (a1) and at least one of a curing agent (b1) and a curing accelerator (c1). In this embodiment, the mass ratio of the total of the curing agent (b1) and the curing accelerator (c1) to the silane compound (a1) [(curing agent (b1) + curing accelerator (c1)) / silane compound (a1)] is preferably 1 or more, more preferably 1.5 or more, or 2 or more, and its upper limit is preferably 200 or less, more preferably 180 or less, 160 or less, 140 or less, or 120 or less. For example, when the resin composition of the present invention contains a silane compound (a1) and a curing agent (b1), the mass ratio of the curing agent (b1) to the silane compound (a1) [curing agent (b1) / silane compound (a1)] is preferably 5 or more, more preferably 10 or more, even more preferably 15 or more, 20 or more, 25 or more, or 30 or more, and the upper limit is preferably 200 or less, more preferably 180 or less, 160 or less, 140 or less, or 120 or less. For example, when the resin composition of the present invention contains a silane compound (a1) and a curing accelerator (c1), the mass ratio of the curing accelerator (c1) to the silane compound (a1) [curing accelerator (c1) / silane compound (a1)] is preferably 1 or more, more preferably 1.2 or more, 1.4 or more, or 1.5 or more, and the upper limit is preferably 20 or less, more preferably 15 or less, 10 or less, 8 or less, 6 or less, or 5 or less.

[0102] -Stress relief material- The resin composition of the present invention may contain a stress relaxation material, which is preferable because the inclusion of a stress relaxation material can suppress the occurrence of warping when a large-area sealing layer is formed in the production of a WLP or PLP, and also makes it easier to realize a resin composition that satisfies the above-mentioned melt viscosity and storage modulus conditions.

[0103] The stress relaxation material is preferably a resin having one or more structures selected from a polybutadiene structure, a polysiloxane structure, a poly(meth)acrylate structure, a polyalkylene structure, a polyalkyleneoxy structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure in its molecule, and more preferably a resin having one or more structures selected from a polybutadiene structure, a poly(meth)acrylate structure, a polyalkyleneoxy structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure. The term "(meth)acrylate" encompasses both methacrylate and acrylate. These structures may be contained in the main chain or in the side chain.

[0104] The stress relaxation material preferably has a high molecular weight, from the viewpoint of suppressing warpage when forming a large-area sealing layer and facilitating the realization of a resin composition that satisfies the above-mentioned melt viscosity and storage modulus conditions. The number-average molecular weight (Mn) of the stress relaxation material is preferably 1,000 or more, more preferably 1,500 or more, and even more preferably 2,000 or more, 2,500 or more, 3,000 or more, 4,000 or more, or 5,000 or more. The upper limit of Mn is preferably 1,000,000 or less, more preferably 900,000 or less, 800,000 or less, or 700,000 or less. The number-average molecular weight (Mn) can be measured as a polystyrene-equivalent value by gel permeation chromatography (GPC).

[0105] From the viewpoint of being able to suppress the occurrence of warping when forming a large-area sealing layer and from the viewpoint of easily realizing a resin composition that preferably satisfies the above-mentioned melt viscosity and storage modulus conditions, the stress relaxation material is preferably one or more types selected from resins having a glass transition temperature (Tg) of 25° C. or less and resins that are liquid at 25° C. Here, for resins for which multiple Tg values ​​are observed, if the lowest Tg is 25° C. or less, then the resin corresponds to a "resin having a Tg of 25° C. or less."

[0106] For resins having a Tg of 25° C. or less, the Tg is preferably 20° C. or less, more preferably 15° C. or less. The lower limit of the Tg is not particularly limited, but is usually −50° C. or more. Furthermore, for resins that are liquid at 25° C., they are preferably liquid at 20° C. or less, more preferably 15° C. or less.

[0107] From the viewpoint of realizing a cured product with high cohesive strength (interlayer adhesion strength) by reacting with epoxy resins, etc., the stress relaxation material preferably has a functional group that can react with epoxy resins, etc. The functional group that can react with epoxy resins, etc. also includes a functional group that appears upon heating.

[0108] In a preferred embodiment, the functional group capable of reacting with an epoxy resin or the like is one or more functional groups selected from the group consisting of a hydroxy group, a carboxy group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group, and a urethane group. Among these, the functional group is preferably a hydroxy group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group, or a urethane group, and more preferably a hydroxy group, an acid anhydride group, a phenolic hydroxyl group, or an epoxy group.

[0109] In a preferred embodiment, the stress relaxation material includes a resin containing a polybutadiene structure (hereinafter also referred to as a "polybutadiene resin"), and the polybutadiene structure may be partially or entirely hydrogenated.

[0110] Specific examples of polybutadiene resins include "Ricon 130MA8", "Ricon 130MA13", "Ricon 130MA20", "Ricon 131MA5", "Ricon 131MA10", "Ricon 131MA17", "Ricon 131MA20", and "Ricon 184MA6" (polybutadienes containing acid anhydride groups) manufactured by Cray Valley Corporation; "JP-100", "JP-200" (epoxidized polybutadiene), "GQ-1000" (polybutadiene with hydroxyl and carboxyl groups introduced), "G-1000", "G-2000", and "G-3000" (polybutadiene with hydroxyl groups at both ends), "GI-1000", "GI-2000", and "GI-3000" (polybutadiene with hydrogenated hydroxyl groups at both ends) manufactured by Nippon Soda Co., Ltd.; Examples of suitable polybutadiene resins include "PB3600" and "PB4700" (polybutadiene-based epoxy resins), "Epofriend A1005," "Epofriend A1010," and "Epofriend A1020" (epoxidized styrene-butadiene-styrene block copolymers) manufactured by Nagase ChemteX Corporation, and "FCA-061L" (hydrogenated polybutadiene-based epoxy resin) and "R-45EPT" (polybutadiene-based epoxy resin) manufactured by Nagase ChemteX Corporation. Examples of suitable polybutadiene resins include hydroxyl-terminated polybutadienes, linear polymers derived from diisocyanate compounds and tetrabasic acid anhydrides (polymers described in JP 2006-37083 A and WO 2008 / 153208 A), and phenolic hydroxyl-containing butadienes. The butadiene structure content of the polymer is preferably 50% by mass or more, more preferably 60% to 95% by mass. For details of the polymer, please refer to the descriptions in JP-A-2006-37083 and WO 2008 / 153208, the contents of which are incorporated herein by reference.

[0111] In a preferred embodiment, the stress relaxation material contains a resin containing a poly(meth)acrylate structure (hereinafter also referred to as "poly(meth)acrylic resin"). Specific examples of poly(meth)acrylic resins include Teisan Resin "SG-70L", "SG-708-6", "WS-023", "SG-700AS", and "SG-280TEA" (carboxy group-containing acrylic ester copolymer resin, acid value 5 to 34 mgKOH / g, weight average molecular weight 400,000 to 900,000, Tg -30 to 5°C), "SG-80H", "SG-80H-3", and "SG-P3" (epoxy group-containing acrylic ester copolymer resin, epoxy equivalent 4761 to 14285 g / eq, weight average molecular weight 350,000 to 850,000, Tg 11 to 12°C), and "SG-600T" (manufactured by Nagase ChemteX Corporation). Examples of suitable resins include "EA" and "SG-790" (hydroxy group-containing acrylic ester copolymer resin, hydroxyl value 20 to 40 mgKOH / g, weight average molecular weight 500,000 to 1,200,000, Tg -37 to -32°C) manufactured by Negami Chemical Industrial Co., Ltd., "ME-2000", "W-116.3" (carboxy group-containing acrylic ester copolymer resin), "W-197C" (hydroxy group-containing acrylic ester copolymer resin), "KG-25", and "KG-3000" (epoxy group-containing acrylic ester copolymer resin), and Alphon "UG-4010" (epoxy group-containing acrylic ester copolymer resin) manufactured by Toagosei Co., Ltd.

[0112] In a preferred embodiment, the stress relief material includes a resin containing a polycarbonate structure (hereinafter also referred to as "polycarbonate resin"). Specific examples of polycarbonate resins include "T6002" and "T6001" (polycarbonate diols) manufactured by Asahi Kasei Chemicals Corporation, and "C-1090," "C-2090," and "C-3090" (polycarbonate diols) manufactured by Kuraray Co., Ltd. Linear polyimides made from hydroxyl-terminated polycarbonate, diisocyanate compounds, and tetrabasic acid anhydrides can also be used. The content of the carbonate structure in the polyimide resin is preferably 50% by mass or more, more preferably 60% to 95% by mass. For details of the polyimide resin, please refer to the description in International Publication No. 2016 / 129541, the contents of which are incorporated herein by reference.

[0113] In a preferred embodiment, the stress relaxation material includes a resin containing a polysiloxane structure (hereinafter also referred to as "polysiloxane resin"). Specific examples of polysiloxane resins include "SMP-2006," "SMP-2003PGMEA," and "SMP-5005PGMEA" manufactured by Shin-Etsu Silicones Co., Ltd., and linear polyimides made from amine-terminated polysiloxane and tetrabasic acid anhydride (see, for example, International Publication No. 2010 / 053185, Japanese Patent Application Laid-Open No. 2002-12667, and Japanese Patent Application Laid-Open No. 2000-319386).

[0114] In a preferred embodiment, the stress relaxation material contains a resin containing a polyalkylene structure or a polyalkyleneoxy structure (hereinafter also referred to as a "polyalkylene resin" and a "polyalkyleneoxy resin", respectively). Specific examples of polyalkylene resins and polyalkyleneoxy resins include "PTXG-1000" and "PTXG-1800" manufactured by Asahi Kasei Fibers Corporation, monofunctional acrylates "AM-90G", "AM-130G", and "AMP-20GY" manufactured by Shin-Nakamura Chemical Co., Ltd., bifunctional acrylates "A-1000", "A-1000PER", "A-B1206PE", "A-BPE-20", and "A-BPE-30", monofunctional methacrylates "M-20G", "M-40G", "M-90G", "M-130G", and "M-230G", and bifunctional methacrylates "23G", "BPE-900", "BPE-1300N", and "1206PE".Other examples include "Light Ester BC," "Light Ester 041MA," "Light Acrylate EC-A," and "Light Acrylate EHDG-AT" manufactured by Kyoeisha Chemical Co., Ltd.; "FA-023M" manufactured by Hitachi Chemical Co., Ltd.; Blenmar (registered trademark) "PME-4000," "50POEO-800B," "PLE-200," "PLE-1300," "PSE-1300," "43PAPE-600B," and "ANP-300" manufactured by NOF Corporation; and Pluronic (registered trademark) "L-23," "L-31," "L-44," "L-61," "L-62," "L-64," "L-71," "L-72," "L-101," "L-121," "P-84," "P-85," "P-103," "F-68," "F-88," "F-108," "25R-1," "25R-2," "17R-2," and "17R-3." 7R-3, 17R-4 (polyoxyethylene polyoxypropylene glycol); Shin-Etsu Silicone Co., Ltd.'s "KF-6011", "KF-6011P", "KF-6012", "KF-6013", "KF-6015", "KF-6016", "KF-6017", "KF-6017P", "KF-6043", "KF-6004", "KF351A", "KF352A", and "KF353"; Examples include "KF354L", "KF355A", "KF615A", "KF945", "KF-640", "KF-642", "KF-643", "KF-644", "KF-6020", "KF-6204", "X22-4515", "KF-6028", "KF-6028P", "KF-6038", "KF-6048", and "KF-6025" (polyoxyalkylene-modified silicone).

[0115] In a preferred embodiment, the stress relief material includes a resin containing a polyisoprene structure (hereinafter also referred to as "polyisoprene resin"). Specific examples of polyisoprene resin include "KL-610" and "KL613" manufactured by Kuraray Co., Ltd.

[0116] In a preferred embodiment, the stress relaxation material includes a resin containing a polyisobutylene structure (hereinafter also referred to as "polyisobutylene resin"). Specific examples of polyisobutylene resins include "SIBSTAR-073T" (styrene-isobutylene-styrene triblock copolymer) and "SIBSTAR-042D" (styrene-isobutylene diblock copolymer), both manufactured by Kaneka Corporation.

[0117] In another preferred embodiment, the stress relief material includes an organic filler. A wide variety of organic fillers containing a rubber component can be used as the organic filler. Examples of the rubber component contained in the organic filler include silicone-based elastomers such as polydimethylsiloxane; olefin-based thermoplastic elastomers such as polybutadiene, polyisoprene, polychlorobutadiene, ethylene-vinyl acetate copolymer, styrene-butadiene copolymer, styrene-isoprene copolymer, styrene-isobutylene copolymer, acrylonitrile-butadiene copolymer, isoprene-isobutylene copolymer, isobutylene-butadiene copolymer, ethylene-propylene-diene terpolymer, and ethylene-propylene-butene terpolymer; and thermoplastic elastomers such as acrylic thermoplastic elastomers such as polypropyl(meth)acrylate, polybutyl(meth)acrylate, polycyclohexyl(meth)acrylate, and polyoctyl(meth)acrylate. Furthermore, silicone-based rubbers such as polyorganosiloxane rubbers may be mixed into the rubber component. The rubber component contained in the rubber particles has a Tg of, for example, 0°C or lower, preferably -10°C or lower, more preferably -20°C or lower, and even more preferably -30°C or lower.

[0118] In one embodiment, the organic filler is a core-shell rubber particle comprising a core particle containing the above-mentioned rubber component and a shell portion obtained by graft copolymerization of a monomer component copolymerizable with the rubber component contained in the core particle. Here, the term "core-shell" does not necessarily refer only to those in which the core particle and the shell portion are clearly distinguishable, but also includes those in which the boundary between the core particle and the shell portion is unclear, and the core particle does not necessarily have to be completely covered with the shell portion.

[0119] Specific examples of organic fillers containing a rubber component include "CHT" manufactured by Cheil Industries; "B602" manufactured by UMGABS; "Paraloid EXL-2602," "Paraloid EXL-2603," "Paraloid EXL-2655," "Paraloid EXL-2311," "Paraloid EXL2313," "Paraloid EXL-2315," "Paraloid KM-330," "Paraloid KM-336P," and "Paraloid KCZ-201" manufactured by Kureha Chemical Industry Co., Ltd.; and "Metabrene C" manufactured by Mitsubishi Rayon Co., Ltd. -223A," "Metablen E-901," "Metablen S-2001," "Metablen W-450A," "Metablen SRK-200," "Kane Ace M-511," "Kane Ace M-600," "Kane Ace M-400," "Kane Ace M-580," and "Kane Ace MR-01" manufactured by Kaneka Corporation, and "Staphyloid AC3355," "Staphyloid AC3816," "Staphyloid AC3832," "Staphyloid AC4030," and "Staphyloid AC3364" manufactured by Aica Kogyo Co., Ltd. These are core-shell type rubber particles.

[0120] When the resin composition of the present invention contains a stress relaxation material, the content of the stress relaxation material in the resin composition is preferably 0.5% by mass or more, more preferably 1% by mass or more, even more preferably 2% by mass or more or 3% by mass or more, and even more preferably 4% by mass or more or 5% by mass or more, based on 100% by mass of the resin components in the resin composition. The upper limit of the content is preferably 30% by mass or less, more preferably 25% by mass or less, 20% by mass or less, or 15% by mass or less.

[0121] -Optional additives- The resin composition of the present invention may further contain any additives. Examples of such additives include thermosetting resins other than epoxy resins, such as benzocyclobutene resins, epoxy acrylate resins, urethane acrylate resins, urethane resins, cyanate resins, polyimide resins, benzoxazine resins, unsaturated polyester resins, phenolic resins, and melamine resins; radically polymerizable resins, such as maleimide resins, (meth)acrylic resins, and styryl resins; radical polymerization initiators, such as peroxide-based radical polymerization initiators and azo-based radical polymerization initiators; thermoplastic resins, such as phenoxy resins, polyvinyl acetal resins, polysulfone resins, polyethersulfone resins, polyetheretherketone resins, and polyester resins; organometallic compounds, such as organic copper compounds, organic zinc compounds, and organic cobalt compounds; colorants, such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium oxide, and carbon black; polymerization inhibitors, such as hydroquinone, catechol, pyrogallol, and phenothiazine; leveling agents, such as silicone-based leveling agents and acrylic polymer-based leveling agents; and ventilated polymers. thickeners such as silane and montmorillonite; defoamers such as silicone-based defoamers, acrylic-based defoamers, fluorine-based defoamers, and vinyl resin-based defoamers; ultraviolet absorbers such as benzotriazole-based ultraviolet absorbers; adhesion improvers such as urea silane; adhesion promoters such as triazole-based adhesion promoters, tetrazole-based adhesion promoters, and triazine-based adhesion promoters; antioxidants such as hindered phenol-based antioxidants; fluorescent brighteners such as stilbene derivatives; surfactants such as fluorine-based surfactants and silicone-based surfactants; phosphorus-based flame retardants (e.g., phosphate ester compounds) flame retardants such as methyl acrylate, phosphazene compounds, phosphinic acid compounds, red phosphorus), nitrogen-based flame retardants (e.g., melamine sulfate), halogen-based flame retardants, and inorganic flame retardants (e.g., antimony trioxide); dispersants such as phosphate ester-based dispersants, polyoxyalkylene-based dispersants, acetylene-based dispersants, silicone-based dispersants, anionic dispersants, and cationic dispersants; and stabilizers such as borate-based stabilizers, titanate-based stabilizers, aluminate-based stabilizers, zirconate-based stabilizers, isocyanate-based stabilizers, carboxylic acid-based stabilizers, and carboxylic anhydride-based stabilizers.The content of such additives may be determined depending on the properties required for the resin composition.

[0122] - Organic solvents - The resin composition of the present invention may further contain an organic solvent as a volatile component. Examples of the organic solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; ester solvents such as methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, isoamyl acetate, methyl propionate, ethyl propionate, and γ-butyrolactone; ether solvents such as tetrahydropyran, tetrahydrofuran, 1,4-dioxane, diethyl ether, diisopropyl ether, dibutyl ether, and diphenyl ether; alcohol solvents such as methanol, ethanol, propanol, butanol, and ethylene glycol; 2-ethoxyethyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl diglycol acetate, γ-butyrolactone, and methyl methoxypropionate. Examples of suitable organic solvents include ether ester solvents such as ethanol; ester alcohol solvents such as methyl lactate, ethyl lactate, and methyl 2-hydroxyisobutyrate; ether alcohol solvents such as 2-methoxypropanol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol monomethyl ether, and diethylene glycol monobutyl ether (butyl carbitol); amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; sulfoxide solvents such as dimethyl sulfoxide; nitrile solvents such as acetonitrile and propionitrile; aliphatic hydrocarbon solvents such as hexane, cyclopentane, cyclohexane, and methylcyclohexane; and aromatic hydrocarbon solvents such as benzene, toluene, xylene, ethylbenzene, and trimethylbenzene. These organic solvents may be used singly or in combination of two or more.

[0123] When the resin composition of the present invention contains an organic solvent, the content of the organic solvent in the resin composition may be determined depending on the properties required of the resin composition, and may be, for example, 20% by mass or less, 15% by mass or less, 10% by mass or less, 5% by mass or less, where the total amount of all components in the resin composition is 100% by mass.

[0124] The resin composition of the present invention can be prepared by appropriately mixing the necessary components among the above-mentioned components, and kneading or mixing them as needed using a kneading means such as a three-roll mill, a ball mill, a bead mill, or a sand mill, or a stirring means such as a super mixer or a planetary mixer.

[0125] As described above, the resin composition of the present invention that satisfies the above melt viscosity and storage modulus conditions can suppress the generation of voids during encapsulation and also suppress the generation of cracks after curing, even when a large amount of small-diameter inorganic filler (e.g., average particle size of 3 μm or less, 2.5 μm or less, 2 μm or less, or 1.5 μm or less) is blended.

[0126] The resin composition of the present invention, which satisfies the above melt viscosity and storage modulus conditions, can achieve both good fluidity and dielectric properties and can be suitably used as various liquid blended products that require good fluidity, such as insulating materials with low transmission loss required for 5G applications. For example, the resin composition of the present invention can be suitably used as various liquid blended products that require good fluidity, such as adhesives, casting materials, fiber-reinforced composite materials, semiconductor encapsulation materials, underfill materials, and mold underfill materials. Therefore, in a preferred embodiment, the resin composition of the present invention is used for adhesives, casting materials, fiber-reinforced composite materials, semiconductor encapsulation, underfill, or mold underfill.

[0127] In particular, from the viewpoint of being able to further enjoy the effect of the present invention, that is, being able to achieve both fluidity and dielectric properties at a good level, the resin composition of the present invention can be suitably used as an insulating material for electronic components such as semiconductor packages and printed wiring boards (resin composition for insulating materials for electronic components), and for example, a resin composition for encapsulating a semiconductor chip (semiconductor encapsulation resin composition), a resin composition for filling the gap between a circuit board (semiconductor package substrate) and a semiconductor chip (underfill resin composition), a resin composition for filling the gap between a circuit board and a semiconductor chip and encapsulating the semiconductor chip (mold underfill resin composition), a resin composition for forming an insulating layer of a printed wiring board (resin composition for insulating layer of printed wiring board), and a resin composition for a rewiring formation layer as an insulating layer for forming a rewiring layer in a semiconductor package (resin composition for rewiring formation layer).

[0128] The resin composition of the present invention, even when a large amount of inorganic filler having a small diameter (for example, an average particle size of 3 μm or less, 2.5 μm or less, 2 μm or less, or 1.5 μm or less) is blended, can suppress the generation of voids during encapsulation and can also suppress the generation of cracks after curing. Therefore, the resin composition of the present invention can be preferably used as a resin composition for semiconductor encapsulation, underfill, or mold underfill, and particularly preferably used as a resin composition for mold underfill.

[0129] The resin composition of the present invention can also be used in a wide range of applications requiring a resin composition, such as sheet-like laminate materials such as resin sheets and prepregs, solder resists, hole-filling resins, and component-embedding resins.

[0130] -Sheet-type laminated materials (resin sheets, prepregs)- The resin composition of the present invention exhibits good fluidity and can therefore be suitably used as a liquid composition, but it may also be used in the form of a sheet-like laminate material containing the resin composition.

[0131] As the sheet-like laminate material, the following resin sheets and prepregs are preferred.

[0132] In one embodiment, the resin sheet includes a support and a layer of a resin composition (hereinafter simply referred to as a "resin composition layer") provided on the support, and is characterized in that the resin composition layer is formed from the resin composition of the present invention.

[0133] The thickness of the resin composition layer varies depending on the application, and may be appropriately determined depending on the application. For example, from the viewpoint of thinning printed wiring boards and semiconductor packages, the thickness of the resin composition layer is preferably 400 μm or less, more preferably 350 μm or less, 300 μm or less, 280 μm or less, 260 μm or less, 240 μm or less, 220 μm or less, or 200 μm or less. The lower limit of the thickness of the resin composition layer is not particularly limited, but may usually be 5 μm or more, 10 μm or more, 20 μm or more, etc.

[0134] Examples of the support include a thermoplastic resin film, a metal foil, and a release paper, and a thermoplastic resin film or a metal foil is preferred. Therefore, in a preferred embodiment, the support is a thermoplastic resin film or a metal foil.

[0135] When a thermoplastic resin film is used as the support, examples of the thermoplastic resin include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), acrylics such as polycarbonate (PC) and polymethyl methacrylate (PMMA), cyclic polyolefins, triacetyl cellulose (TAC), polyether sulfide (PES), polyether ketone, polyimide, etc. Among these, polyethylene terephthalate and polyethylene naphthalate are preferred, with inexpensive polyethylene terephthalate being particularly preferred.

[0136] When a metal foil is used as the support, examples of the metal foil include copper foil and aluminum foil, with copper foil being preferred. The copper foil may be a foil made of a single metal, copper, or an alloy of copper and another metal (e.g., tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.).

[0137] The surface of the support to be bonded to the resin composition layer may be subjected to a matte treatment, a corona treatment, or an antistatic treatment. Alternatively, a support having a release layer on the surface to be bonded to the resin composition layer may be used as the support. Examples of the release agent used in the release layer of the support having a release layer include one or more release agents selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins. Commercially available products may be used as the support having a release layer, such as "SK-1," "AL-5," and "AL-7" manufactured by Lintec Corporation, "Lumirror T60" manufactured by Toray Industries, Inc., "Purex" manufactured by Teijin Limited, and "Uni-Peel" manufactured by Unitika Limited, which are PET films having a release layer primarily composed of an alkyd resin-based release agent.

[0138] The thickness of the support is not particularly limited, but is preferably in the range of 5 μm to 75 μm, more preferably 10 μm to 60 μm. When a support with a release layer is used, it is preferable that the thickness of the entire support with a release layer is in the above range.

[0139] When a metal foil is used as the support, a metal foil with a support substrate may be used, which is a thin metal foil with a peelable support substrate attached thereto. In one embodiment, the metal foil with a support substrate includes a support substrate, a release layer provided on the support substrate, and a metal foil provided on the release layer. When a metal foil with a support substrate is used as the support, the resin composition layer is provided on the metal foil.

[0140] In the metal foil with a supporting substrate, the material of the supporting substrate is not particularly limited, but examples thereof include copper foil, aluminum foil, stainless steel foil, titanium foil, copper alloy foil, etc. When copper foil is used as the supporting substrate, it may be electrolytic copper foil or rolled copper foil. Furthermore, the release layer is not particularly limited as long as it allows the metal foil to be released from the supporting substrate, and examples thereof include an alloy layer of an element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, and P; an organic coating, etc.

[0141] In the metal foil with a supporting substrate, the material of the metal foil is preferably, for example, copper foil or copper alloy foil.

[0142] In the metal foil with a supporting substrate, the thickness of the supporting substrate is not particularly limited, but is preferably in the range of 10 μm to 150 μm, more preferably in the range of 10 μm to 100 μm. The thickness of the metal foil may be, for example, in the range of 0.1 μm to 10 μm.

[0143] In one embodiment, the resin sheet may further include an optional layer, if necessary. Examples of such optional layers include a protective film provided on the surface of the resin composition layer that is not bonded to the support (i.e., the surface opposite the support). The thickness of the protective film is not particularly limited, but is, for example, 1 μm to 40 μm. By laminating the protective film, adhesion of dust and the like to the surface of the resin composition layer and scratches can be suppressed.

[0144] The resin sheet can be produced, for example, by preparing a liquid resin composition as is or a resin varnish by dissolving the resin composition in an organic solvent, applying this onto a support using a die coater or the like, and then drying to form a resin composition layer.

[0145] The organic solvent may be the same as the organic solvent described as a component of the resin composition. The organic solvent may be used alone or in combination of two or more.

[0146] Drying may be carried out by known methods such as heating or hot air blowing. Drying conditions are not particularly limited, but drying is carried out so that the content of organic solvent in the resin composition layer becomes 10% by mass or less, preferably 5% by mass or less. Although this varies depending on the boiling point of the organic solvent in the resin composition or resin varnish, for example, when a resin composition or resin varnish containing 30% by mass to 60% by mass of organic solvent is used, the resin composition layer can be formed by drying at 50°C to 150°C for 3 to 10 minutes.

[0147] The resin sheet can be stored in a rolled state. When the resin sheet has a protective film, it can be used by peeling off the protective film.

[0148] In one embodiment, the prepreg is formed by impregnating a sheet-like fiber substrate with the resin composition of the present invention.

[0149] The sheet-like fiber substrate used for the prepreg is not particularly limited, and commonly used prepreg substrates such as glass cloth, aramid nonwoven fabric, and liquid crystal polymer nonwoven fabric can be used. From the viewpoint of thinning printed wiring boards and semiconductor packages, the thickness of the sheet-like fiber substrate is preferably 50 μm or less, more preferably 40 μm or less, even more preferably 30 μm or less, and particularly preferably 20 μm or less. There is no particular lower limit to the thickness of the sheet-like fiber substrate. It is usually 10 μm or more.

[0150] The prepreg can be produced by known methods such as a hot melt method, a solvent method, etc. The thickness of the prepreg can be in the same range as that of the resin composition layer in the resin sheet described above.

[0151] [Semiconductor Package] The semiconductor package of the present invention comprises a cured product of the resin composition of the present invention.

[0152] In one embodiment, the semiconductor package of the present invention includes a circuit board, a semiconductor chip mounted on the circuit board, and a cured product of the resin composition of the present invention that encapsulates at least a portion of the semiconductor chip. Hereinafter, this embodiment will also be referred to as a "first embodiment."

[0153] In the first embodiment, the circuit board may be a conventionally known circuit board used to form a semiconductor package, and may be manufactured in the same manner as the printed wiring board described below, for example.

[0154] The bonding conditions for the circuit board and the semiconductor chip may be any conditions that allow conductive connection between the terminal electrodes of the semiconductor chip and the circuit wiring of the circuit board, such as the conditions used in flip-chip mounting of semiconductor chips.

[0155] An example of a bonding method is a method in which a semiconductor chip is pressure-bonded to a circuit board. Pressure-bonding conditions include a pressure-bonding temperature typically in the range of 120°C to 240°C (preferably in the range of 130°C to 200°C, and more preferably in the range of 140°C to 180°C), and a pressure-bonding time typically in the range of 1 second to 60 seconds (preferably in the range of 5 seconds to 30 seconds). Another example of a bonding method is a method in which a semiconductor chip is placed on a circuit board and bonded by reflow. Reflow conditions may be in the range of 120°C to 300°C.

[0156] After bonding the semiconductor chip to the circuit board, the gap between the semiconductor chip and the circuit board may be filled with an underfill material. As described above, the resin composition of the present invention is useful as such an underfill material because it exhibits good fluidity and is excellent in filling narrow gaps. In such a case, the semiconductor package of the present invention includes an underfill material made of a cured product of the resin composition of the present invention.

[0157] The semiconductor chip can be encapsulated by the same method as in step (3) in the second embodiment described below. As described above, the resin composition of the present invention exhibits good fluidity and is therefore useful as an encapsulant for such semiconductor chips. In such a case, the semiconductor package of the present invention includes an encapsulant made of a cured product of the resin composition of the present invention.

[0158] As described above, the resin composition of the present invention exhibits good fluidity even when a large amount of small-diameter inorganic filler (for example, average particle size of 3 μm or less, 2.5 μm or less, 2 μm or less, or 1.5 μm or less) is blended therein, and can suppress the generation of voids during encapsulation and also suppress the generation of cracks after curing. Therefore, the resin composition can be suitably used as a mold underfill material, and the gap between a semiconductor chip and a circuit board and the encapsulation of the semiconductor chip can be simultaneously filled.

[0159] When a semiconductor package is produced using the resin composition of the present invention, the resin composition of the present invention is preferably used as a liquid resin composition, but may also be used in the form of a sheet-like laminate material as described above.

[0160] In another embodiment (hereinafter also referred to as "second embodiment"), the semiconductor chip package of the present invention can be produced, for example, by a method including the following steps (1) to (6) using the resin composition of the present invention. The resin composition of the present invention can be used to form the encapsulating layer in step (3) or the rewiring formation layer in step (5). An example of forming the encapsulating layer or rewiring formation layer using the resin composition will be shown below, but techniques for forming the encapsulating layer or rewiring formation layer of a semiconductor chip package are known, and a person skilled in the art can produce a semiconductor chip package using the resin composition of the present invention according to known techniques. (1) a step of laminating a temporary fixing film on a substrate; (2) a step of temporarily fixing a semiconductor chip on a temporary fixing film; (3) forming an encapsulation layer on the semiconductor chip; (4) peeling the substrate and the temporary fixing film from the semiconductor chip; (5) forming a rewiring formation layer as an insulating layer on the surface of the semiconductor chip from which the base material and the temporary fixing film have been peeled off; and (6) A step of forming a rewiring layer as a conductor layer on the rewiring formation layer.

[0161] -Process (1)- The material used for the substrate is not particularly limited. Examples of the substrate include a silicon wafer, a glass wafer, a glass substrate, a metal substrate such as copper, titanium, stainless steel, or cold-rolled steel sheet (SPCC), a substrate made of glass fiber impregnated with epoxy resin or the like and subjected to a thermosetting treatment (e.g., an FR-4 substrate), and a substrate made of bismaleimide triazine resin (BT resin).

[0162] The material of the temporary fixing film is not particularly limited as long as it can be peeled off from the semiconductor chip in step (4) and can temporarily fix the semiconductor chip. Commercially available products can be used as the temporary fixing film. Examples of commercially available products include Riva Alpha manufactured by Nitto Denko Corporation.

[0163] -Process (2)- The semiconductor chip is temporarily fixed on the temporary fixing film so that its electrode pad surface is bonded to the temporary fixing film. The temporary fixing of the semiconductor chip can be performed using a known device such as a flip chip bonder or a die bonder. The layout and number of semiconductor chips to be arranged can be appropriately set depending on the shape and size of the temporary fixing film, the number of semiconductor packages to be produced, etc., and for example, the semiconductor chips can be temporarily fixed by arranging them in a matrix of multiple rows and multiple columns.

[0164] -Process (3)- The resin composition of the present invention may be applied as a liquid composition onto a semiconductor chip and cured (for example, by heat curing) to form an encapsulating layer. Alternatively, the resin composition of the present invention may be laminated on a semiconductor chip in the form of a resin sheet and cured (for example, by heat curing) to form an encapsulating layer.

[0165] By using the resin composition of the present invention that satisfies the above-mentioned melt viscosity and storage modulus conditions, it is possible to suppress the occurrence of voids during sealing, and also to suppress the occurrence of cracks after curing, whether the resin composition is applied as a liquid composition or whether a resin composition layer is laminated in the form of a resin sheet.

[0166] When used in the form of a resin sheet, the semiconductor chip and the resin sheet can be laminated by removing the protective film from the resin sheet and then heat-pressing the resin sheet to the semiconductor chip from the support side. The semiconductor chip and the resin sheet can be laminated by a vacuum lamination method, and the lamination conditions are the same as those described later in relation to the method for producing a printed wiring board, and the preferred ranges are also the same.

[0167] After lamination, the resin composition is thermally cured to form the sealing layer under the same conditions as those described below in connection with the method for producing a printed wiring board.

[0168] The support of the resin sheet may be peeled off after the resin sheet is laminated on the semiconductor chip and thermally cured, or the support may be peeled off before the resin sheet is laminated on the semiconductor chip.

[0169] When the resin composition of the present invention is applied as a liquid composition to form a sealing layer, the application conditions may be the same as those for forming the resin composition layer described in relation to the resin sheet of the present invention. By using the resin composition of the present invention, good fluidity can be achieved at application and molding temperatures.

[0170] -Process (4)- The method for peeling off the substrate and the temporary fixing film can be changed as appropriate depending on the material of the temporary fixing film, etc., and examples include a method in which the temporary fixing film is heated and foamed (or expanded) to peel it off, and a method in which ultraviolet light is irradiated from the substrate side to reduce the adhesive strength of the temporary fixing film and peel it off.

[0171] In the method of heating and foaming (or expanding) the temporary fixing film to peel it off, the heating conditions are usually 100 to 250°C for 1 to 90 seconds or 5 to 15 minutes. In the method of irradiating ultraviolet light from the substrate side to reduce the adhesive strength of the temporary fixing film to peel it off, the irradiation dose of ultraviolet light is usually 10 mJ / cm. 2 ~1000mJ / cm 2 is.

[0172] -Process (5)- The material for forming the rewiring formation layer (insulating layer) is not particularly limited as long as it has insulating properties when the rewiring formation layer (insulating layer) is formed, and from the viewpoint of ease of manufacturing a semiconductor package, a photosensitive resin or a thermosetting resin is preferred. The rewiring formation layer may be formed using the resin composition of the present invention.

[0173] After forming the redistribution layer, via holes may be formed in the redistribution layer to connect the semiconductor chip to a conductor layer (described later). The via holes may be formed by a known method depending on the material of the redistribution layer.

[0174] -Process (6)- The material of the conductor layer formed on the redistribution layer is not particularly limited. In a preferred embodiment, the conductor layer contains one or more metals selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. The conductor layer may be a single metal layer or an alloy layer. Examples of alloy layers include layers formed from alloys of two or more metals selected from the above group (e.g., nickel-chromium alloys, copper-nickel alloys, and copper-titanium alloys). Among these, from the viewpoints of versatility, cost, ease of patterning, etc., in the formation of the conductor layer, a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper, or an alloy layer of a nickel-chromium alloy, copper-nickel alloy, or copper-titanium alloy is preferred. A single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper, or an alloy layer of a nickel-chromium alloy, is more preferred, and a single metal layer of copper is even more preferred.

[0175] The conductor layer may have a single layer structure or a multi-layer structure in which two or more single metal layers or alloy layers made of different types of metals or alloys are laminated. When the conductor layer has a multi-layer structure, the layer in contact with the insulating layer is preferably a single metal layer of chromium, zinc, or titanium, or an alloy layer of a nickel-chromium alloy.

[0176] The thickness of the conductor layer depends on the desired design of the semiconductor chip package, but is generally 1 μm to 35 μm, preferably 1 μm to 20 μm.

[0177] In one embodiment, the conductor layer may be formed by plating. For example, a conductor layer having a desired wiring pattern can be formed by plating the surface of the rewiring formation layer using a conventionally known technique such as a semi-additive method or a full-additive method. From the viewpoint of ease of production, it is preferable to form the conductor layer by a semi-additive method. An example of forming the conductor layer by a semi-additive method will be described below.

[0178] First, a plating seed layer is formed on the surface of the rewiring formation layer by electroless plating. Next, a mask pattern is formed on the formed plating seed layer, exposing a portion of the plating seed layer corresponding to the desired wiring pattern. After a metal layer is formed on the exposed plating seed layer by electrolytic plating, the mask pattern is removed. Thereafter, unnecessary plating seed layer is removed by etching or the like, thereby forming a conductor layer (rewiring layer) having the desired wiring pattern.

[0179] The steps (5) and (6) may be repeated to alternately stack (build up) conductive layers (rewiring layers) and rewiring formation layers (insulating layers).

[0180] The manufacturing of the semiconductor chip package may further include the steps of (7) forming a solder resist layer on the conductor layer (rewiring layer), (8) forming bumps, and (9) dicing the plurality of semiconductor chip packages into individual semiconductor chip packages. These steps may be performed according to various methods known to those skilled in the art for use in manufacturing semiconductor chip packages.

[0181] The second embodiment is a method of first providing a semiconductor chip and then forming a rewiring layer on the electrode pad surface, i.e., a chip 1st (Chip-1 st In addition to the chip 1st process, the semiconductor package of the present invention can also be manufactured by a process in which a rewiring layer is first provided, and then a semiconductor chip is provided on the rewiring layer in a state in which the electrode pad surface can be electrically connected to the rewiring layer, and then the semiconductor chip is sealed. This is called the rewiring layer 1st (RDL-1) process. stThe resin composition of the present invention, which has excellent filling properties, may be produced by the Chip-1 method. st Construction method and RDL-1 st Regardless of the construction method, it is possible to create semiconductor packages with extremely low transmission loss, which are required for 5G applications, without the occurrence of voids or cracks.

[0182] By forming an encapsulating layer, a rewiring formation layer, etc. using the resin composition of the present invention, a semiconductor package with extremely low transmission loss can be realized while suppressing the occurrence of flow marks and voids, regardless of whether the semiconductor package is a fan-in package or a fan-out package. In one embodiment, the semiconductor chip package of the present invention is a fan-out package. The resin composition of the present invention can be applied to both a fan-out panel level package (FOPLP) and a fan-out wafer level package (FOWLP). In one embodiment, the semiconductor package of the present invention is a fan-out panel level package (FOPLP). In another embodiment, the semiconductor package of the present invention is a fan-out wafer level package (FOWLP).

[0183] [Printed wiring board] A printed wiring board can be produced using the resin composition of the present invention. The present invention also provides such a printed wiring board. The printed wiring board of the present invention is characterized by including an insulating layer made of a cured product of the resin composition of the present invention.

[0184] The printed wiring board can be produced, for example, by using the above-mentioned resin sheet by a method including the following steps (I) and (II). (I) A step of laminating a resin sheet on an inner layer substrate so that the resin composition layer of the resin sheet is bonded to the inner layer substrate. (II) A step of curing (e.g., thermally curing) the resin composition layer to form an insulating layer.

[0185] The "inner layer substrate" used in step (I) is a member that will become the substrate of a printed wiring board, and examples thereof include glass epoxy substrates, metal substrates, polyester substrates, polyimide substrates, BT resin substrates, and thermosetting polyphenylene ether substrates. The substrate may have a conductor layer on one or both sides, and this conductor layer may be patterned. An inner layer substrate having a conductor layer (circuit) formed on one or both sides of the substrate may be referred to as an "inner layer circuit board." Furthermore, the "inner layer substrate" of the present invention also includes intermediate products on which an insulating layer and / or a conductor layer is to be further formed during the production of a printed wiring board. When the printed wiring board is a circuit board with built-in components, an inner layer substrate with built-in components may be used.

[0186] The inner layer substrate and the resin sheet can be laminated, for example, by thermocompression bonding the resin sheet to the inner layer substrate from the support side. Examples of a member for thermocompression bonding the resin sheet to the inner layer substrate (hereinafter also referred to as a "thermocompression bonding member") include a heated metal plate (such as a SUS end plate) or a metal roll (SUS roll). The thermocompression bonding member may be pressed directly onto the resin sheet, or may be pressed via an elastic material such as heat-resistant rubber so that the resin sheet can sufficiently conform to the surface irregularities of the inner layer substrate.

[0187] The lamination of the inner layer substrate and the resin sheet may be carried out by a vacuum lamination method. In the vacuum lamination method, the thermocompression temperature is preferably in the range of 60°C to 160°C, more preferably 80°C to 140°C, the thermocompression pressure is preferably in the range of 0.098MPa to 1.77MPa, more preferably 0.29MPa to 1.47MPa, and the thermocompression time is preferably in the range of 20 seconds to 400 seconds, more preferably 30 seconds to 300 seconds. The lamination may be carried out under reduced pressure conditions, preferably at a pressure of 26.7hPa or less.

[0188] The lamination can be performed using a commercially available vacuum laminator, such as a vacuum pressure laminator manufactured by Meiki Seisakusho Co., Ltd., a vacuum applicator manufactured by Nikko Materials Co., Ltd., or a batch vacuum pressure laminator.

[0189] After lamination, the laminated resin sheets may be smoothed under normal pressure (atmospheric pressure), for example, by pressing a thermocompression member from the support side. The pressing conditions for the smoothing treatment may be the same as the thermocompression conditions for lamination. The smoothing treatment may be performed using a commercially available laminator. Note that lamination and smoothing treatment may be performed consecutively using the commercially available vacuum laminator.

[0190] The support may be removed between step (I) and step (II), or after step (II). When a metal foil is used as the support, the conductor layer may be formed using the metal foil without peeling off the support. When a metal foil with a supporting substrate is used as the support, the supporting substrate (and the release layer) may be peeled off. Then, the conductor layer can be formed using the metal foil.

[0191] In step (II), the resin composition layer is cured (for example, by heat curing) to form an insulating layer made of a cured product of the resin composition. The curing conditions for the resin composition layer are not particularly limited, and conditions typically employed for forming insulating layers for printed wiring boards may be used.

[0192] For example, the thermal curing conditions for the resin composition layer vary depending on the type of resin composition, but in one embodiment, the curing temperature is preferably 120° C. to 250° C., more preferably 150° C. to 240° C., and even more preferably 180° C. to 230° C. The curing time is preferably 5 minutes to 240 minutes, more preferably 10 minutes to 150 minutes, and even more preferably 15 minutes to 120 minutes.

[0193] Before thermally curing the resin composition layer, the resin composition layer may be preheated at a temperature lower than the curing temperature. For example, prior to thermally curing the resin composition layer, the resin composition layer may be preheated at a temperature of 50°C to 120°C, preferably 60°C to 115°C, more preferably 70°C to 110°C for 5 minutes or more, preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes, and even more preferably 15 minutes to 100 minutes.

[0194] When manufacturing a printed wiring board, the following steps may be further performed: (III) drilling holes in the insulating layer, (IV) roughening the insulating layer, and (V) forming a conductor layer. These steps (III) to (V) may be performed according to various methods known to those skilled in the art and used in manufacturing printed wiring boards. When the support is removed after step (II), the removal of the support may be performed between steps (II) and (III), between steps (III) and (IV), or between steps (IV) and (V). Furthermore, if necessary, the formation of the insulating layer and the conductor layer in steps (I) to (V) may be repeated to form a multilayer wiring board.

[0195] In another embodiment, a printed wiring board can be manufactured using the above-mentioned prepreg. The manufacturing method is basically the same as when a resin sheet is used.

[0196] Step (III) is a step of drilling holes in the insulating layer, thereby forming holes such as via holes and through holes in the insulating layer. Step (III) may be performed using, for example, a drill, a laser, plasma, or the like, depending on the composition of the resin composition used to form the insulating layer. The dimensions and shape of the holes may be determined appropriately depending on the design of the printed wiring board.

[0197] Step (IV) is a step of roughening the insulating layer. Usually, in this step (IV), smear removal (desmear) is also performed. The procedure and conditions of the roughening treatment are not particularly limited, and known procedures and conditions commonly used in forming insulating layers for printed wiring boards can be adopted. For example, the insulating layer can be roughened by performing a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a neutralization treatment with a neutralizing liquid in this order.

[0198] The swelling liquid used in the roughening treatment is not particularly limited, but examples thereof include alkaline solutions and surfactant solutions, and is preferably an alkaline solution, with sodium hydroxide solution and potassium hydroxide solution being more preferred. Commercially available swelling liquids include "Swelling Dip Securigance P" and "Swelling Dip Securigance SBU" manufactured by Atotech Japan. The swelling treatment using a swelling liquid is not particularly limited, but can be carried out by, for example, immersing the insulating layer in a swelling liquid at 30°C to 90°C for 1 to 20 minutes. To keep the swelling of the resin in the insulating layer to an appropriate level, it is preferable to immerse the insulating layer in a swelling liquid at 40°C to 80°C for 5 to 15 minutes.

[0199] The oxidizing agent used in the roughening treatment is not particularly limited, but examples thereof include alkaline permanganate solutions prepared by dissolving potassium permanganate or sodium permanganate in an aqueous solution of sodium hydroxide. Roughening treatment using an oxidizing agent such as alkaline permanganate solution is preferably carried out by immersing the insulating layer in an oxidizing agent solution heated to 60°C to 100°C for 10 to 30 minutes. The concentration of permanganate in the alkaline permanganate solution is preferably 5% by mass to 10% by mass. Commercially available oxidizing agents include alkaline permanganate solutions such as "Concentrate Compact CP" and "Dosing Solution Securigance P" manufactured by Atotech Japan.

[0200] The neutralizing solution used in the roughening treatment is preferably an acidic aqueous solution, and examples of commercially available products include "Reduction Solution Securigant P" manufactured by Atotech Japan.

[0201] Treatment with a neutralizing solution can be carried out by immersing the surface that has been roughened with an oxidizing agent in a neutralizing solution at 30° C. to 80° C. for 5 to 30 minutes. From the standpoint of workability, etc., a method in which the object that has been roughened with an oxidizing agent is immersed in a neutralizing solution at 40° C. to 70° C. for 5 to 20 minutes is preferred.

[0202] Step (V) is a step of forming a conductor layer on an insulating layer, and may be performed in the same manner as step (6) described in relation to the method for manufacturing a semiconductor chip package.

[0203] The thickness of the conductor layer depends on the desired design of the printed wiring board, but is generally 3 μm to 35 μm, preferably 5 μm to 30 μm.

[0204] The conductor layer may also be formed using a metal foil. When a metal foil is used to form the conductor layer, it is preferable to perform step (V) between steps (I) and (II). For example, after step (I), the support is removed and a metal foil is laminated on the exposed surface of the resin composition layer. The lamination of the resin composition layer and the metal foil may be performed by a vacuum lamination method. The lamination conditions may be the same as those described for step (I). Next, step (II) is performed to form an insulating layer. Thereafter, a conductor layer having a desired wiring pattern can be formed using the metal foil on the insulating layer by a conventionally known technique such as a subtractive method or a modified semi-additive method.

[0205] The metal foil can be produced by a known method such as an electrolytic method, a rolling method, etc. Examples of commercially available metal foils include HLP foil and JXUT-III foil manufactured by JX Nippon Mining & Metals Corporation, and 3EC-III foil and TP-III foil manufactured by Mitsui Mining & Smelting Co., Ltd.

[0206] Alternatively, when a metal foil or a metal foil with a supporting substrate is used as the support for the resin sheet, the conductor layer may be formed using the metal foil, as described above.

[0207] [Semiconductor Devices] The semiconductor device of the present invention includes a layer made of a cured product of the resin composition of the present invention. The semiconductor device of the present invention can be produced using the semiconductor package or printed wiring board of the present invention.

[0208] Examples of semiconductor devices include various semiconductor devices used in electrical appliances (for example, computers, mobile phones, digital cameras, and televisions) and vehicles (for example, motorcycles, automobiles, trains, ships, and aircraft). [Example]

[0209] The present invention will be described in more detail below with reference to examples. The present invention is not limited to these examples. In the following, "parts" and "%" representing amounts mean "parts by mass" and "% by mass", respectively, unless otherwise specified.

[0210] <Inorganic filler used> Inorganic filler 1: average particle size 1.7 μm, top cut 5 μm, specific surface area 3.7 m 2 / g, treated with a silane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd., N-phenyl-3-aminopropyltrimethoxysilane). Inorganic filler 2: average particle size 0.5 μm, top cut 3 μm, specific surface area 7.0 m 2 / g, treated with a silane compound ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd., N-phenyl-3-aminopropyltrimethoxysilane).

[0211] <Synthesis Example 1> (Synthesis of Active Ester Compound A) A reaction vessel was charged with 201 parts by mass of ortho-allylphenol and 1,000 parts by mass of toluene, and the contents were dissolved while the vessel was purged with nitrogen under reduced pressure. Subsequently, 152 parts by mass of isophthalic acid chloride was charged and dissolved. While purging the vessel with nitrogen, 309 g of 20% aqueous sodium hydroxide solution was added dropwise over 3 hours. The temperature inside the system was controlled to 60°C or less. The mixture was then stirred for 1 hour to react. After the reaction was completed, the reaction mixture was separated and the aqueous layer was removed. This operation was repeated until the pH of the aqueous layer reached 7, and toluene and other components were distilled off under heating and reduced pressure to obtain active ester compound A. The ethylenically unsaturated bond equivalent of the resulting active ester compound A was calculated to be 199 g / eq. from the charge ratio.

[0212] Example 1 Naphthalene-type epoxy resin (DIC "HP4032D", epoxy equivalent 140 g / eq.) 4 parts, epoxy resin mixture (mixture of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin, Nippon Steel Chemical & Material Co., Ltd. "ZX-1059", epoxy equivalent 170 g / eq.) 3 parts, resin having methacryloyl group and polyethylene oxide structure (Shin-Nakamura Chemical Co., Ltd. "BPE-1300N") 4 parts, inorganic filler 1 A resin composition was obtained by blending 90 parts of acrylic acid, 10 parts of an acid anhydride curing agent ("HNA-100" manufactured by New Japan Chemical Co., Ltd., acid anhydride equivalent 179 g / eq.), 0.5 parts of an imidazole curing accelerator ("2MA-OK-PW" manufactured by Shikoku Chemical Co., Ltd.), 0.1 parts of a silane compound ("KBM-403" manufactured by Shin-Etsu Chemical Co., Ltd., 3-glycidoxypropyltrimethoxysilane), and 0.1 parts of a silane compound ("KBM-202SS" manufactured by Shin-Etsu Chemical Co., Ltd., diphenyldimethoxysilane) and dispersing the mixture uniformly in a mixer.

[0213] <Example 2> A resin composition was obtained in the same manner as in Example 1, except that the amount of the silane compound ("KBM-202SS") was changed from 0.1 part to 0.3 part.

[0214] Example 3 Naphthalene-type epoxy resin (DIC "HP4032D", epoxy equivalent 140 g / eq.) 3 parts, epoxy resin mixture (mixture of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin, Nippon Steel Chemical & Material Co., Ltd. "ZX-1059", epoxy equivalent 170 g / eq.) 5 parts, glycidylamine-type epoxy resin (Mitsubishi Chemical Corporation "JER630LSD", epoxy equivalent 95 g / eq.) 2 parts, polyoxyethylene polyoxypropylene glycol (ADEKA Corporation "L-64") 1.5 parts, inorganic filler 1 A resin composition was obtained by blending 75 parts of methyl methyl acrylate, 4 parts of an amine curing agent ("Kayahard AA" manufactured by Nippon Kayaku Co., Ltd.), 0.4 parts of an imidazole curing accelerator ("2E4MZ" manufactured by Shikoku Kasei Co., Ltd.), 0.1 parts of a silane compound ("KBM-403" manufactured by Shin-Etsu Chemical Co., Ltd., 3-glycidoxypropyltrimethoxysilane), and 0.15 parts of a silane compound ("KBM-202SS" manufactured by Shin-Etsu Chemical Co., Ltd., diphenyldimethoxysilane) and dispersing the mixture uniformly in a mixer.

[0215] Example 4 Naphthalene type epoxy resin (DIC "HP4032D", epoxy equivalent 140g / eq.) 5 parts, epoxy resin mixture (mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin, Nippon Steel Chemical & Material Co., Ltd. "ZX-1059", epoxy equivalent 170g / eq.) 5 parts, glycidylamine type epoxy resin (Mitsubishi Chemical Corporation "JER630LSD", epoxy equivalent 95g / eq.) 4 parts, polyoxyethylene polyoxypropylene glycol (ADEKA Corporation "L-64") 1.5 parts, inorganic filler 1 A resin composition was obtained by blending 60 parts of acrylic acid, 0.2 parts of an imidazole curing accelerator ("2E4MZ" manufactured by Shikoku Chemical Industry Co., Ltd.), 0.1 parts of a silane compound ("KBM-403" manufactured by Shin-Etsu Chemical Co., Ltd., 3-glycidoxypropyltrimethoxysilane), and 0.1 parts of a silane compound ("KBM-202SS" manufactured by Shin-Etsu Chemical Co., Ltd., diphenyldimethoxysilane) and dispersing the mixture uniformly in a mixer.

[0216] <Example 5> Naphthalene-type epoxy resin (DIC Corporation "HP4032D", epoxy equivalent 140 g / eq.) 4 parts, epoxy resin mixture (mixture of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin, Nippon Steel Chemical & Material Co., Ltd. "ZX-1059", epoxy equivalent 170 g / eq.) 3 parts, glycidylamine-type epoxy resin (Mitsubishi Chemical Corporation "JER630LSD", epoxy equivalent 95 g / eq.) 4 parts, inorganic filler 1 85 parts, acid anhydride-based curing agent (New Japan Chemical Co., Ltd. "HNA-100", acid anhydride equivalent 179 g / eq.) 8 parts, active ester compound A A resin composition was obtained by blending 0.5 parts of a silane compound (manufactured by Shin-Etsu Chemical Co., Ltd., "KBM-403", 3-glycidoxypropyltrimethoxysilane), 0.1 parts of a silane compound (manufactured by Shin-Etsu Chemical Co., Ltd., "KBM-202SS", diphenyldimethoxysilane), and uniformly dispersing the blend in a mixer.

[0217] Example 6 A resin composition was obtained in the same manner as in Example 2, except that 0.5 parts of a polyoxyalkylene-modified silicone resin ("KF-6012" manufactured by Shin-Etsu Silicones Co., Ltd.) was used instead of 4 parts of a resin having a methacryloyl group and a polyethylene oxide structure ("BPE-1300N").

[0218] Example 7 A resin composition was obtained in the same manner as in Example 2, except that 1 part of an epoxidized polybutadiene resin ("JP100" manufactured by Nippon Soda Co., Ltd.) was used instead of 4 parts of a resin having a methacryloyl group and a polyethylene oxide structure ("BPE-1300N").

[0219] Example 8 A resin composition was obtained in the same manner as in Example 2, except that 1 part of an epoxidized acrylic resin ("UG-4010" manufactured by Toa Gosei Co., Ltd.) was used instead of 4 parts of a resin having a methacryloyl group and a polyethylene oxide structure ("BPE-1300N").

[0220] <Example 9> Naphthalene-type epoxy resin (DIC "HP4032D", epoxy equivalent 140g / eq.) 4 parts, epoxy resin mixture (mixture of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin, Nippon Steel Chemical & Material Co., Ltd. "ZX-1059", epoxy equivalent 170g / eq.) 7 parts, resin having methacryloyl group and polyethylene oxide structure (Shin-Nakamura Chemical Co., Ltd. "BPE-1300N") 3 parts, inorganic filler 2 A resin composition was obtained by blending 80 parts of acrylic acid, 6 parts of an acid anhydride curing agent ("HNA-100" manufactured by New Japan Chemical Co., Ltd., acid anhydride equivalent 179 g / eq.), 0.5 parts of an imidazole curing accelerator ("2MA-OK-PW" manufactured by Shikoku Chemical Co., Ltd.), 0.1 parts of a silane compound ("KBM-403" manufactured by Shin-Etsu Chemical Co., Ltd., 3-glycidoxypropyltrimethoxysilane), and 0.1 parts of a silane compound ("KBM-202SS" manufactured by Shin-Etsu Chemical Co., Ltd., diphenyldimethoxysilane) and dispersing the mixture uniformly in a mixer.

[0221] <Comparative Example 1> A resin composition was obtained in the same manner as in Example 3, except that (1) a silane compound ("KBM-202SS") was not used, (2) an amine-based curing agent ("Kayahard AA") was not used, and (3) the amount of polyoxyethylene polyoxypropylene glycol ("L-64") added was changed from 1.5 parts to 3 parts.

[0222] <Comparative Example 2> A resin composition was obtained in the same manner as in Example 1, except that (1) no silane compound ("KBM-202SS") was used, and (2) 0.5 parts of a phosphorus-based curing accelerator ("TBP-DA" manufactured by Hokko Chemical Industry Co., Ltd.) was used instead of 0.5 parts of the imidazole-based curing accelerator ("2MA-OK-PW").

[0223] Details of the resin compositions prepared in Examples 1 to 9 and Comparative Examples 1 and 2 are shown in Table 1.

[0224] [Table 1]

[0225] <Measurement of melt viscosity> For the resin compositions prepared in the examples and comparative examples, the melt viscosity was measured using a dynamic viscoelasticity measuring device ("Rheosol-G3000" manufactured by UBM Co., Ltd.). Specifically, for a 1 g sample taken from the resin composition, measurement was carried out in a time-dependent mode using a parallel plate with a diameter of 18 mm. The measurement conditions were a constant temperature of 120°C, a step time of 5 sec, a strain control of 1 deg, and a frequency of 1 Hz. Then, the melt viscosity MV1 (Pa·s) at the initial stage (at the start of measurement) and the melt viscosity MV2 (Pa·s) after 2 minutes from the start of measurement were measured.

[0226] <Measurement of Tg and storage modulus> On a 12-inch silicon wafer subjected to a release treatment, the resin compositions prepared in the examples and comparative examples were compression-molded using a compression molding device (mold temperature: 130°C, pressure: 6 MPa, cure time: 10 minutes) to form a resin composition layer with a thickness of 300 μm. Then, the resin composition was peeled off from the release-treated silicon wafer and heated at 180°C for 90 minutes to thermally cure the resin composition to prepare a cured sample. Next, the above cured sample was cut into test pieces with a width of 7 mm and a length of 40 mm, and dynamic mechanical analysis was performed in a tensile mode using a dynamic mechanical analyzer ("DMS-6100" manufactured by Seiko Instruments Inc.). After mounting the test piece on the device, measurement was carried out under the measurement conditions of a frequency of 1 Hz and a heating rate of 5°C / min. In such measurement, the value of the storage modulus SM1 (E'; GPa) at 23°C and the temperature showing the maximum value of the peak of tanδ (= loss modulus E" / storage modulus E') were read as Tg. Further, the value of the storage modulus SM2 (E'; GPa) at a temperature T (°C) was read. Here, the temperature T is Tg - 30 (°C) when the glass transition temperature of each cured product is Tg (°C).

[0227] <Test Example 1: Mold Underfill (MUF) Test> A chip component with copper bumps (WALTS-TEG FBW40A-000 1JY manufactured by Waltz Corporation, chip size 10 mm x 10 mm, chip thickness 300 μm, copper bump size diameter 20 μm, height 30 μm, copper bump pitch 40 μm) was mounted on a 12-inch glass wafer with a thickness of 775 μm using adhesive at the four corners so that the glass wafer and copper bumps were in contact. Next, the resin compositions prepared in the examples and comparative examples were compression molded using a compression molding machine (mold temperature: 130°C, pressure: 6 MPa, cure time: 10 minutes) to a resin thickness of 400 μm to form a mold underfill (MUF) for the chip components. The resin compositions were heated at 150°C for 60 minutes to be thermally cured, and then the presence or absence of voids was observed using a microscope from the back of the glass wafer. Evaluation was then performed according to the following criteria.

[0228] Evaluation criteria: ◯: Resin was filled between the bumps and no voids were observed. ×: There were portions between the bumps where the resin was not filled, and voids and unfilled portions were observed.

[0229] <Test Example 2: Thermal Cycle Test> A chip component with copper bumps (WALTS-TEG FBW40A-000 1JY manufactured by Waltz Corporation, chip size 10 mm x 10 mm, chip thickness 300 μm, copper bump size diameter 20 μm, height 30 μm, copper bump pitch 40 μm) was mounted on a 12-inch silicon wafer with a thickness of 775 μm using adhesive at the four corners so that the silicon wafer and copper bumps were in contact. Next, the resin compositions prepared in the examples and comparative examples were compression molded using a compression molding machine (mold temperature: 130°C, pressure: 6 MPa, cure time: 10 minutes) to a resin thickness of 400 μm to form a mold underfill (MUF) for the chip components. The resin compositions were heated at 150°C for 60 minutes to be thermally cured, and then subjected to a thermal cycle test (-55°C to 125°C, 500 cycles). Evaluation was then conducted according to the following criteria.

[0230] Evaluation criteria: Good: No delamination of the chip component or cracks in the resin occurred after the test. ×: After the test, delamination of the chip component or cracks in the resin occurred.

[0231] The physical properties and evaluation results of Examples 1 to 9 and Comparative Examples 1 and 2 are shown in Table 2.

[0232] [Table 2]

Claims

1. A resin composition comprising an epoxy resin, an inorganic filler, and a silane compound, the content of the epoxy resin is 5% by mass or more and 90% by mass or less, when the resin component in the resin composition is 100% by mass; A resin composition that satisfies the following melt viscosity and storage modulus conditions. <Melt viscosity conditions> When the melt viscosity is measured at 120°C, the initial melt viscosity is MV1 (Pa s), and the melt viscosity after 2 minutes is MV2 (Pa s). MV2 / MV1≦10 and MV2≦3000 is. <Storage modulus conditions> When the storage modulus of the cured product obtained by heating the resin composition at 150°C for 60 minutes is SM1 (GPa) at 23°C and the storage modulus of the cured product at temperature T is SM2 (GPa), 0.4<SM2 / SM1≦1 Here, the temperature T is Tg-30 (°C), where Tg (°C) is the glass transition temperature of the cured product.

2. The resin composition according to claim 1, comprising a silane compound (a1) represented by the following formula (A-1): (2) ｎ ｳir ４－ｎ (2-1) (In the formula, R represents an alkyl group, Ar represents an aryl group which may have a substituent, and n represents 1 or 2.)

3. One or more curing agents (b1) selected from acid anhydride curing agents and amine curing agents, and One or more curing accelerators (c1) selected from imidazole-based curing accelerators The resin composition according to claim 1, comprising at least one of the following:

4. One or more curing agents (b1) selected from acid anhydride curing agents and amine curing agents, and One or more curing accelerators (c1) selected from imidazole-based curing accelerators The resin composition according to claim 2, comprising at least one of the following:

5. The resin composition according to claim 2, further comprising another silane compound (a2) different from the silane compound (a1).

6. 5. The resin composition according to claim 4, wherein the mass ratio of the total of the curing agent (b1) and the curing accelerator (c1) to the silane compound (a1) [(curing agent (b1) + curing accelerator (c1)) / silane compound (a1)] is 1 or more.

7. The resin composition according to claim 5, wherein the mass ratio of the silane compound (a2) to the silane compound (a1) (silane compound (a2) / silane compound (a1)) is 0.1 or more.

8. The resin composition according to claim 1, further comprising an inorganic filler having an average particle size of 3 μm or less.

9. A resin composition as described in claim 1, wherein the content of inorganic filler is 50 mass% or more when the non-volatile components in the resin composition are 100 mass%.

10. The resin composition according to claim 1 , further comprising a stress relaxation agent.

11. The resin composition described in claim 10, wherein the stress relaxation agent is a resin having, within its molecule, one or more structures selected from a polybutadiene structure, a polysiloxane structure, a poly(meth)acrylate structure, a polyalkylene structure, a polyalkyleneoxy structure, a polyisoprene structure, a polyisobutylene structure, and a polycarbonate structure.

12. The resin composition according to claim 1, wherein the glass transition temperature Tg of the cured product obtained by heating the resin composition at 150°C for 60 minutes is 140°C or higher.

13. The resin composition according to claim 1, which is used for mold underfill.

14. A cured product of the resin composition according to any one of claims 1 to 13.

15. A semiconductor package comprising a cured product of the resin composition according to any one of claims 1 to 13.

16. 16. The semiconductor package according to claim 15, which is a fan-out type package.

17. A semiconductor device comprising a cured product of the resin composition according to any one of claims 1 to 13.

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