Semiconductor Module

Abstract

The present invention prevents deformation of an insulating component that insulates a positive terminal and a negative terminal.　This semiconductor module has a terminal structure (15a) that includes: a positive terminal (12a); a negative terminal (13a); and a first insulating component (14a) that is sandwiched between the positive terminal (12a) and the negative terminal (13a) and that includes a protruding part which protrudes from between the positive terminal (12a) and the negative terminal (13a). The semiconductor module further includes: a second insulating component (18) and a third insulating component (19) which sandwich the terminal structure (15a) vertically and cover the front surface and the rear surface of at least a portion of the protruding part; and a case integrally formed with the terminal structure (15a) which is sandwiched between the second insulating component (18) and the third insulating component (19).

Description

[Technical Field]

[0001] The present invention relates to a semiconductor module including a switching element. [Background technology]

[0002] 2. Description of the Related Art Semiconductor modules including switching elements such as IGBTs (Insulated Gate Bipolar Transistors) and power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are used in power conversion devices that use high voltages and large currents. In order to reduce the inductance of semiconductor modules, some have a structure in which the positive terminal and negative terminal (or the wire connected to the positive terminal and the wire connected to the negative terminal) are placed close to each other with an insulating material such as insulating paper sandwiched between them.

[0003] Such structures are shown, for example, in paragraph

[0096] of Patent Document 1, paragraph

[0021] of Patent Document 2, paragraph

[0046] of Patent Document 3, Figure 4(a), paragraph

[0019] of Patent Document 4, Figure 1(a), paragraph

[0012] of Patent Document 5, Figure 1, paragraph

[0018] of Patent Documents 6 and 7, Figure 5, paragraph

[0033] of Patent Document 8, Figure 1, paragraph

[0018] of Patent Document 9, Figure 2, paragraph

[0162] of Patent Documents 10 and 11, Figure 36(A), paragraph

[0023] , Figure 9 of Patent Document 12, paragraph

[0054] , Figure 34 of Patent Document 13, etc. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-9834 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-66974 [Patent Document 3] Japanese Patent Application Laid-Open No. 2013-9501 [Patent Document 4] Japanese Patent Application Laid-Open No. 2006-86438 [Patent Document 5] International Publication No. 2022 / 091288 [Patent Document 6] Patent Publication No. 2021-106235 [Patent Document 7] Japanese Patent Publication No. 2022-6876 [Patent Document 8] International Publication No. 2019 / 098368 [Patent Document 9] Japanese Patent Application Laid-Open No. 2016-6834 [Patent Document 10] Japanese Patent Application Laid-Open No. 2009-81993 [Patent Document 11] Japanese Patent Application Laid-Open No. 2008-29117 [Patent Document 12] Japanese Patent Application Laid-Open No. 2010-157565 [Patent Document 13] International Publication No. 2020 / 035931 Summary of the Invention [Problem to be solved by the invention]

[0005] In order to ensure an insulating distance between the positive and negative terminals and prevent dielectric breakdown, the width of the insulating member sandwiched between the positive and negative terminals may be made wider than the width of the positive and negative terminals, in which case the insulating member has a protruding portion that protrudes from between the positive and negative terminals. When a terminal structure, in which an insulating member having such a protrusion is sandwiched between a positive terminal and a negative terminal, is integrally molded with a semiconductor module case, the protrusion may be deformed. Deformation may include bending or curling of the protrusion due to the influence of resin pressure, etc. Such deformation may make it impossible to ensure the insulating distance between the positive terminal and the negative terminal, resulting in a deterioration of insulating performance.

[0006] Furthermore, when a thin material such as insulating paper is used as the insulating member, the insulating member is more likely to deform, and it may take time to fix the terminal structure to the mold during integral molding.

[0007] The present invention has been made in view of the above points, and has an object to provide a semiconductor module that can suppress deformation of an insulating member that insulates a positive terminal from a negative terminal. [Means for solving the problem]

[0008] According to one aspect of the present invention, a terminal structure includes: a positive terminal electrically connected to a positive electrode end of a first switching element of an upper arm; a negative terminal electrically connected to a negative electrode end of a second switching element of a lower arm; and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; so as to contact at least a part of the front and rear surfaces of the protrusion, The terminal structure is sandwiched from above and below, and Note With a good look The aforementioned A semiconductor module is provided that has a second insulating member and a third insulating member that cover the rear surface, and a case that is molded integrally with the terminal structure sandwiched between the second insulating member and the third insulating member.

[0009] At least one of the second insulating member and the third insulating member may have a recess on a surface facing the terminal structure, into which the positive terminal or the negative terminal is fitted.

[0010] One of the second insulating member and the third insulating member may have a first protrusion on a surface facing the terminal structure, the first protrusion positioning the first insulating member.

[0011] The plurality of first protrusions may be disposed opposite to a part of an outer edge of the first insulating member.

[0012] One of the second insulating member or the third insulating member may have one or more pillars on a first side of the surface facing the terminal structure and on a second side opposite the first side, and the other of the second insulating member or the third insulating member may have a fitting portion that fits with the one or more pillars.

[0013] One of the second insulating member or the third insulating member may have one or more second protrusions on a third edge located toward the inside of the case on the surface facing the terminal structure, and at least a portion of the other side of the second insulating member or the third insulating member may abut against the one or more second protrusions.

[0014] A corner of the protrusion of the first insulating member that is positioned toward the outside of the case may not be sandwiched between the second insulating member and the third insulating member and may extend to the outside of the case.

[0015] An end portion of the protruding portion of the first insulating member facing outward from the case may be covered by the second insulating member and the third insulating member, and may extend outward from the case.

[0016] The case, the second insulating member, and the third insulating member may be made of a thermoplastic resin.

[0017] The first insulating member may be insulating paper.

[0018] According to one aspect of the present invention, there is provided a semiconductor module comprising: a terminal structure having a positive terminal electrically connected to a positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to a negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; second insulating members and third insulating members sandwiching the terminal structure from above and below and covering front and back surfaces of at least a portion of the protruding portion; and a case molded integrally with the terminal structure sandwiched between the second insulating member and the third insulating member, wherein at least one of the second insulating member and the third insulating member has a recess in which the positive terminal or the negative terminal is fitted on a surface facing the terminal structure. According to one aspect of the present invention, there is provided a semiconductor module comprising: a terminal structure having a positive terminal electrically connected to a positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to a negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protrusion, a portion of which protrudes from between the positive terminal and the negative terminal; second insulating members and third insulating members sandwiching the terminal structure from above and below and covering front and back surfaces of at least a portion of the protrusion; and a case molded integrally with the terminal structure sandwiched between the second insulating member and the third insulating member, wherein one of the second insulating member or the third insulating member has a first protrusion on a surface facing the terminal structure for positioning the first insulating member. The plurality of first protrusions may be disposed opposite to a part of an outer edge of the first insulating member. According to one aspect of the present invention, there is provided a semiconductor module comprising: a terminal structure having a positive terminal electrically connected to a positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to a negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; second insulating members and third insulating members sandwiching the terminal structure from above and below and covering front and back surfaces of at least a portion of the protruding portion; and a case molded integrally with the terminal structure sandwiched between the second insulating member and the third insulating member, wherein one of the second insulating member or the third insulating member has one or more support posts on a first side and a second side opposite to the first side of a surface facing the terminal structure, and the other of the second insulating member or the third insulating member has a fitting portion that fits with the one or more support posts. According to one aspect of the present invention, there is provided a semiconductor module comprising: a terminal structure having a positive terminal electrically connected to a positive electrode end of a first switching element of an upper arm; a negative terminal electrically connected to a negative electrode end of a second switching element of a lower arm; a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; second insulating members and third insulating members sandwiching the terminal structure from above and below and covering front and back surfaces of at least a portion of the protruding portion; and a case molded integrally with the terminal structure sandwiched between the second insulating member and the third insulating member, wherein one or more second protrusions are provided on a third edge of either the second insulating member or the third insulating member that faces the terminal structure and is positioned toward the inside of the case, and at least a portion of the other side surface of the second insulating member or the third insulating member abuts against the one or more second protrusions. According to one aspect of the present invention, there is provided a semiconductor module comprising: a terminal structure having a positive terminal electrically connected to a positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to a negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; second insulating members and third insulating members sandwiching the terminal structure from above and below and covering front and back surfaces of at least a portion of the protruding portion; and a case molded integrally with the terminal structure sandwiched between the second insulating member and the third insulating member, wherein a corner of the protruding portion of the first insulating member located toward the outside of the case is not sandwiched between the second insulating member and the third insulating member and extends outside the case. The above summary of the invention does not list all of the necessary features of the present invention, and subcombinations of these features may also constitute inventions. [Effects of the Invention]

[0019] According to the disclosed technique, deformation of the insulating member that insulates the positive terminal and the negative terminal can be suppressed. The above and other objects, features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings illustrating preferred embodiments of the present invention. [Brief explanation of the drawings]

[0020] [Figure 1] 1 is a perspective view illustrating an example of a semiconductor module according to a first embodiment. [Figure 2] FIG. 2 is a diagram illustrating an example of an equivalent circuit of the semiconductor module according to the first embodiment. [Figure 3] FIG. 1 is a perspective view showing an example of a terminal structure. [Figure 4] 10 is a perspective view showing an example in which a terminal structure is sandwiched between a second insulating member and a third insulating member. FIG. [Figure 5] FIG. 4 is a perspective view showing an example of a second insulating member. [Figure 6] 10A and 10B are diagrams illustrating an example of arrangement of a positive terminal on a second insulating member. [Figure 7] 10A and 10B are diagrams illustrating an example of arrangement of a first insulating member on a second insulating member. [Figure 8] FIG. 10 is a diagram illustrating an example of the arrangement of a negative terminal. [Figure 9] FIG. 10 is a perspective view showing an example of a third insulating member. [Figure 10] FIG. 10 is a perspective view showing an example of a rear surface of a third insulating member. [Figure 11] FIG. 10 is a perspective view showing a modified example of the second insulating member. [Figure 12] FIG. 10 is a perspective view showing a modified example of the positive terminal. [Figure 13] 10A and 10B are diagrams showing an example of arrangement of a positive terminal on a second insulating member according to a modified example. [Figure 14] 10A and 10B are diagrams illustrating an example of arrangement of a first insulating member on a second insulating member according to a modified example. [Figure 15] FIG. 10 is a perspective view showing a modified example of the negative terminal. [Figure 16] 10A and 10B are diagrams showing an example of the arrangement of the negative terminal when a second insulating member according to a modified example is used. [Figure 17] 10A and 10B are diagrams showing an example of the arrangement of a third insulating member when a second insulating member according to a modified example is used. [Figure 18] FIG. 10 is a perspective view illustrating an example of a semiconductor module according to a second embodiment. [Figure 19]10 is a perspective view showing an example of a terminal structure sandwiched between a second insulating member and a third insulating member. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0021] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the terms "front surface" and "top surface" refer to the surface facing upward in the semiconductor module 10 of FIG. 1. Similarly, "top" refers to the upward direction in the semiconductor module 10 of FIG. 1. The terms "back surface" and "bottom surface" refer to the surface facing downward in the semiconductor module 10 of FIG. 1. Similarly, "bottom" refers to the downward direction in the semiconductor module 10 of FIG. 1. Similar directions will be used in other drawings as necessary. The terms "front surface," "top surface," "top," "back surface," "bottom surface," "bottom," and "side surface" are merely convenient expressions for specifying relative positional relationships and do not limit the technical concept of the present invention. For example, "top" and "bottom" do not necessarily refer to the vertical direction relative to the ground. In other words, the "top" and "bottom" directions are not limited to the direction of gravity.

[0022] (First embodiment) Fig. 1 is a perspective view showing an example of a semiconductor module according to a first embodiment, Fig. 2 is a diagram showing an example of an equivalent circuit of the semiconductor module according to the first embodiment, and Fig. 3 is a perspective view showing an example of a terminal structure. The semiconductor module 10 includes three semiconductor units (not shown) and a case 11 for housing the semiconductor units. Each semiconductor unit includes a ceramic circuit board and a semiconductor chip mounted on the ceramic circuit board. The ceramic circuit board includes an insulating plate, a heat sink formed on the back surface of the insulating plate, and a circuit pattern formed on the front surface of the insulating plate. The insulating plate is made of ceramics with excellent thermal conductivity. Such ceramics include high-temperature conductive aluminum oxide, aluminum nitride, silicon nitride, etc. The heat sink is made of metal with excellent thermal conductivity. Such metals include aluminum, iron, silver, copper, or alloys containing at least one of these. The circuit pattern is made of metal with excellent conductivity. Such metals include copper or a copper alloy. The number and shape of the circuit pattern are selected appropriately depending on the specifications of the semiconductor module 10. Examples of ceramic circuit boards with such a configuration include direct copper bonding (DCB) substrates and active metal brazed (AMB) substrates.

[0023] The semiconductor chip includes a switching element such as a power MOSFET or an IGBT, which is made of silicon or silicon carbide. Such a semiconductor chip includes, for example, a drain electrode (or collector electrode) as a main electrode on the back surface and a gate electrode and a source electrode (or emitter electrode) as main electrodes on the front surface. The semiconductor chip also includes, as necessary, a free-wheeling diode (FWD) such as a Schottky barrier diode (SBD) or a P-intrinsic-N (PiN) diode. Such a semiconductor chip includes a cathode electrode as a main electrode on the back surface and an anode electrode as a main electrode on the front surface. Alternatively, a reverse-conducting (RC) IGBT, which combines the functions of an IGBT and an FWD, may be used as the semiconductor chip. The number and type of such semiconductor chips are also appropriately selected according to the specifications of the semiconductor module 10.

[0024] Case 11 includes storage areas 11c1, 11c2, and 11c3 for storing the semiconductor units described above. Storage areas 11c1, 11c2, and 11c3 are spaces provided in the middle of case 11 along the longitudinal direction of case 11 in a plan view. The semiconductor units are electrically connected to various terminals, as described below, within storage areas 11c1, 11c2, and 11c3. Wiring members such as bonding wires and lead frames are used for this electrical connection. The wiring members are made of a material with excellent conductivity. Such a material is a metal such as aluminum or copper, or an alloy containing at least one of these metals.

[0025] The case 11 further includes terminal structures 15a, 15b, and 15c. The terminal structure 15a includes a positive terminal 12a, a negative terminal 13a, and a first insulating member 14a sandwiched between the positive terminal 12a and the negative terminal 13a. The terminal structure 15b includes a positive terminal 12b, a negative terminal 13b, and a first insulating member 14b sandwiched between the positive terminal 12b and the negative terminal 13b. The terminal structure 15c includes a positive terminal 12c, a negative terminal 13c, and a first insulating member 14c sandwiched between the positive terminal 12c and the negative terminal 13c.

[0026] The positive terminals 12a, 12b, and 12c and the negative terminals 13a, 13b, and 13c are made of a metal with excellent conductivity, such as copper or a copper alloy. 1, one end of the front surface of each of the positive terminals 12a, 12b, and 12c and the negative terminals 13a, 13b, and 13c is exposed along the longitudinal direction on the first side 11a of the case 11. At least the first side 11a side of each of the positive terminals 12a, 12b, and 12c and the negative terminals 13a, 13b, and 13c has a flat plate shape. The exposed portions of the positive terminals 12a, 12b, 12c and the negative terminals 13a, 13b, 13c are connected to wiring that electrically connects, for example, a capacitor that functions as a power supply to the semiconductor unit. The other ends of the positive terminals 12a, 12b, 12c and the negative terminals 13a, 13b, 13c are electrically connected to the semiconductor unit inside the case 11.

[0027] In the equivalent circuit of Fig. 2, the positive terminals 12a, 12b, and 12c are denoted as P(12a), P(12b), and P(12c), and the negative terminals 13a, 13b, and 13c are denoted as N(13a), N(13b), and N(13c). Positive terminal 12a of terminal structure 15a is electrically connected to the positive terminal of first switching element 21a1 of the upper arm, as shown in Fig. 2, of the semiconductor unit housed in storage region 11c1. Negative terminal 13a of terminal structure 15a is electrically connected to the negative terminal of second switching element 21a2 of the lower arm, as shown in Fig. 2, of the semiconductor unit housed in storage region 11c1. For example, if first switching element 21a1 and second switching element 21a2 are IGBTs, the positive terminal is the collector electrode of first switching element 21a1, and the negative terminal is the emitter electrode of second switching element 21a2.

[0028] Similarly, the positive terminal 12b of the terminal structure 15b is electrically connected to the positive terminal of the first switching element 21b1 of the upper arm (as shown in FIG. 2) of the semiconductor unit housed in the storage region 11c2. The negative terminal 13b of the terminal structure 15b is electrically connected to the negative terminal of the second switching element 21b2 of the lower arm (as shown in FIG. 2) of the semiconductor unit housed in the storage region 11c2. Similarly, the positive terminal 12c of the terminal structure 15c is electrically connected to the positive terminal of the first switching element 21c1 of the upper arm (as shown in FIG. 2) of the semiconductor unit housed in the storage region 11c3. The negative terminal 13c of the terminal structure 15c is electrically connected to the negative terminal of the second switching element 21c2 of the lower arm (as shown in FIG. 2) of the semiconductor unit housed in the storage region 11c3.

[0029] The first insulating members 14a, 14b, and 14c are, for example, insulating paper. Examples of insulating paper that can be used include insulating paper made of wholly aromatic polyamide polymer, and sheet-shaped insulating paper made of fluorine-based or polyimide-based resin materials. The first insulating members 14a, 14b, and 14c may also be ceramic substrates made of aluminum oxide, silicon nitride, or the like. The tip ends of the first insulating members 14a, 14b, and 14c on the first side portion 11a are located between the tip ends of the positive terminals 12a, 12b, and 12c and the tip ends of the negative terminals 13a, 13b, and 13c. and negative Insulation between the terminals 13a, 13b, and 13c is maintained.

[0030] 3, in terminal structure 15a, positive terminal 12a and negative terminal 13a are provided with openings 12a1 and 13a1, respectively. Openings 12a1 and 13a1 are holes through which position fixing pins extending from a mold used when integrally molding case 11 pass. Portion 12a2 of positive terminal 12a extends from the rear surface of first insulating member 14a toward the inside of case 11. Portion 12a2 has a step. For example, the lowest step at the tip of portion 12a2 is connected to the positive electrode of the semiconductor unit via a wiring member such as a bonding wire or a lead frame.

[0031] Negative terminal 13a is divided into two portions 13a2 and 13a3 on first insulating member 14a toward the inside of case 11. Portions 13a2 and 13a3 extend from the front surface of first insulating member 14a toward the inside of case 11. Portions 13a2 and 13a3 are provided with steps. For example, the lowest steps at the tips of portions 13a2 and 13a3 are connected to the negative electrode of the semiconductor unit via wiring members such as bonding wires or lead frames.

[0032] The width of first insulating member 14a (the length in the longitudinal direction of case 11) is wider than the width of positive terminal 12a and negative terminal 13a in order to ensure an insulating distance between positive terminal 12a and negative terminal 13a and prevent dielectric breakdown. Therefore, a part of first insulating member 14a forms protrusion 14a1 that protrudes from between positive terminal 12a and negative terminal 13a.

[0033] The terminal structures 15b and 15c have the same configuration as the terminal structure 15a shown in FIG.

[0034] 3 may deform and result in a decrease in insulating performance when the terminal structure 15a and the case 11 are integrally molded. Furthermore, if a thin material such as insulating paper is used as the first insulating member 14a, the first insulating member 14a is more likely to deform, and it may take time to fix the terminal structure 15a to the mold during integral molding.

[0035] Therefore, in the semiconductor module 10 of the first embodiment, each of the above-mentioned terminal structures 15a, 15b, 15c is sandwiched from above and below by a second insulating member and a third insulating member that cover at least a portion of the front and back surfaces of the above-mentioned protrusions.

[0036] FIG. 4 is a perspective view showing an example in which a terminal structure is sandwiched between a second insulating member and a third insulating member. Second insulating member 18 and third insulating member 19 sandwich terminal structure 15a from above and below, covering at least a portion of the front and back surfaces of the protruding portion of first insulating member 14a (for example, protruding portion 14a1 in FIG. 3). Terminal structure 15a is molded integrally with case 11 while being sandwiched between second insulating member 18 and third insulating member 19 in this manner. Although not shown in the figures, terminal structures 15b and 15c are also molded integrally with case 11 while being sandwiched between the second insulating member and the third insulating member in a similar manner.

[0037] This makes it possible to suppress deformation of the protruding portions of the first insulating members 14a, 14b, and 14c during molding, and to prevent deterioration of insulating performance. Furthermore, by suppressing deformation of the protruding portions of first insulating members 14a, 14b, and 14c, the time required to fix terminal structures 15a, 15b, and 15c to a mold during integral molding can be shortened. Also, there is no need to provide pins or the like in the mold to suppress deformation of the protruding portions of first insulating members 14a, 14b, and 14c, which simplifies the mold configuration. The second insulating member 18 and the third insulating member 19 are made of a thermoplastic resin, similar to the material of the case 11. This prevents the resin from flowing into the terminal structure 15a during integral molding. Specific configuration examples of the second insulating member 18 and the third insulating member 19 will be described later (see FIGS. 5, 9, and 10).

[0038] As shown in FIG. 1, the case 11 further has control terminals 16a, 16b, and 16c attached to the sides of the storage areas 11c1, 11c2, and 11c3, respectively. The control terminals 16a, 16b, and 16c are made of a metal with excellent conductivity, such as copper, a copper alloy, aluminum, or an aluminum alloy. Control terminal 16a is electrically connected to the gate terminal of first switching element 21a1 or second switching element 21a2 shown in Fig. 2 of the semiconductor unit housed in storage region 11c1. Control terminal 16b is electrically connected to the gate terminal of first switching element 21b1 or second switching element 21b2 shown in Fig. 2 of the semiconductor unit housed in storage region 11c2. Control terminal 16c is electrically connected to the gate terminal of first switching element 21c1 or second switching element 21c2 shown in Fig. 2 of the semiconductor unit housed in storage region 11c3.

[0039] Furthermore, case 11 includes U terminal 17a, V terminal 17b, and W terminal 17c. One end of U terminal 17a, V terminal 17b, and W terminal 17c is exposed on second side 11b of case 11 along the longitudinal direction of case 11. U terminal 17a, V terminal 17b, and W terminal 17c are made of a metal with excellent conductivity. Such a metal is, for example, copper or a copper alloy. The other end of U terminal 17a, V terminal 17b, and W terminal 17c is electrically connected to the semiconductor unit inside case 11 as follows.

[0040] In the equivalent circuit of FIG. 2, the U terminal 17a, the V terminal 17b, and the W terminal 17c are represented as U(17a), V(17b), and W(17c). The U-terminal 17a is electrically connected to the negative terminal of the first switching element 21a1 and the positive terminal of the second switching element 21a2 (shown in FIG. 2) of the semiconductor unit housed in the housing region 11c1. The V-terminal 17b is electrically connected to the negative terminal of the first switching element 21b1 and the positive terminal of the second switching element 21b2 (shown in FIG. 2) of the semiconductor unit housed in the housing region 11c2. The W-terminal 17c is electrically connected to the negative terminal of the first switching element 21c1 and the positive terminal of the second switching element 21c2 (shown in FIG. 2) of the semiconductor unit housed in the housing region 11c3.

[0041] Case 11 is integrally molded with terminal structures 15a, 15b, and 15c, control terminals 16a, 16b, and 16c, U terminal 17a, V terminal 17b, and W terminal 17c, which are sandwiched between the second insulating member and the third insulating member. Molding is performed by injection molding using a thermoplastic resin, for example. Examples of the thermoplastic resin include polyphenylene sulfide (PPS) resin, polybutylene terephthalate (PBT) resin, polybutylene succinate (PBS) resin, polyamide (PA) resin, and acrylonitrile butadiene styrene (ABS) resin.

[0042] Furthermore, semiconductor units are housed in the housing regions 11c1, 11c2, and 11c3, and after electrical connection with the various terminals is established, they are sealed. MaterialsThe inside of the case 11 is sealed by the sealing member. The sealing member contains a thermosetting resin and a filler contained in the thermosetting resin. The thermosetting resin is an epoxy resin, a phenolic resin, a maleimide resin, or the like. The filler is silicon oxide, aluminum oxide, boron nitride, or aluminum nitride.

[0043] Although the semiconductor module 10 has been described above as including three semiconductor units, the present invention is not limited to this and the semiconductor module 10 may include one, two, or four or more semiconductor units.

[0044] Next, examples of the second insulating member and the third insulating member that sandwich each of the terminal structures 15a, 15b, and 15c from above and below will be described in more detail. Note that, although the following description focuses on an example of the second insulating member and the third insulating member that sandwich the terminal structure 15a from above and below, the second insulating member and the third insulating member that sandwich the terminal structures 15b and 15c from above and below also have the same configuration.

[0045] FIG. 5 is a perspective view showing an example of the second insulating member. The second insulating member 18 has a recess 18a on its surface facing the terminal structure 15a, into which the positive terminal 12a fits. Furthermore, the second insulating member 18 has first protrusions 18b1 and 18b2 on its surface facing the terminal structure 15a, which position the first insulating member 14a. The first protrusions 18b1 and 18b2 are disposed opposite parts of the outer edge of the first insulating member 14a (see FIG. 7). In addition, second insulating member 18 has support posts 18c1 and 18c2 on a first side of the surface facing terminal structure 15a, and support posts 18c3 and 18c4 on a second side opposite to the first side. Note that the number of support posts is not limited to two on each of the first and second sides, and may be one or three or more.

[0046] Fig. 6 is a diagram showing an example of arrangement of the positive terminal on the second insulating member. As shown in Fig. 6, a portion of the positive terminal 12a is fitted into the recess 18a of the second insulating member 18. This prevents the positive terminal 12a from shifting out of position.

[0047] FIG. 7 shows an example of the arrangement of the first insulating member on the second insulating member. The first insulating member 14a is arranged on a portion of the upper surface of the positive terminal 12a, which is fitted into the recess 18a of the second insulating member 18. The first protrusions 18b1 and 18b2 of the second insulating member 18 protrude toward the inside of the first insulating member 14a so as to engage with the side edges of the first insulating member 14a. The side surfaces of the side edges of the first insulating member 14a facing the first protrusions 18b1 and 18b2 are recessed inward. The first insulating member 14a is positioned by the first protrusions 18b1 and 18b2 of the second insulating member 18. This prevents the first insulating member 14a from shifting out of position.

[0048] 8 is a diagram showing an example of the arrangement of the negative terminal. The negative terminal 13a is arranged on the front surface of the first insulating member 14a. As described above, the portions 13a2 and 13a3 extend from the front surface of the first insulating member 14a toward the inside of the case 11.

[0049] 9 is a perspective view showing an example of the third insulating member. The third insulating member 19 has fitting portions 19a1 and 19a2 that fit with the supports 18c2 and 18c3 of the second insulating member 18. By providing such fitting portions 19a1 and 19a2, it is possible to prevent the third insulating member 19 from shifting in position in the longitudinal direction of the case 11 and in the outward direction of the case 11. Furthermore, the third insulating member 19 has protrusions 19b1 and 19b2 that abut against the supports 18c1 and 18c4 of the second insulating member 18 in the longitudinal direction of the case 11. By providing such protrusions 19b1 and 19b2, it is possible to further suppress displacement of the third insulating member 19 in the longitudinal direction of the case 11.

[0050] 10 is a perspective view showing an example of the back surface of the third insulating member 19. The back surface of the third insulating member 19 (the surface facing the terminal structure 15a) is provided with a recess 19c into which the negative terminal 13a is fitted. This prevents the negative terminal 13a from shifting out of position.

[0051] In the above example, both the second insulating member 18 and the third insulating member 19 have the recesses 18a, 19c into which the positive terminal 12a and the negative terminal 13a are fitted, but this is not limiting. Either the second insulating member 18 or the third insulating member 19 may have a recess into which the positive terminal 12a or the negative terminal 13a is fitted. In the above example, the second insulating member 18 includes the first protrusions 18b1 and 18b2 that position the first insulating member 14a, but this is not limiting. The third insulating member 19 may also be provided with a first protrusion that positions the first insulating member 14a on the surface facing the terminal structure 15a (the back surface shown in FIG. 10). In the above example, second insulating member 18 is provided with support posts 18c1-18c4, and third insulating member 19 is provided with fitting portions 19a1, 19a2 and protrusions 19b1, 19b2, but this is not limiting. Third insulating member 19 may be provided with support posts similar to support posts 18c1-18c4, and second insulating member 18 may be provided with fitting portions and protrusions similar to fitting portions 19a1, 19a2 and protrusions 19b1, 19b2.

[0052] (Variation) In the following FIGS. 11 to 17, elements similar to those shown in FIGS. 5 to 9 are denoted by the same reference numerals as those given to the elements shown in FIGS. 11 is a perspective view showing a modified second insulating member. Similar to second insulating member 18, modified second insulating member 30 has supports 18c1 and 18c2 on a first side of the surface facing terminal structure 15a and supports 18c3 and 18c4 on a second side facing the first side. Furthermore, modified second insulating member 30 has second protrusions 30a1 and 30a2 on a third side of the surface facing terminal structure 15a, which is located toward the inside of case 11.

[0053] A portion of the second protrusions 30a1 and 30a2 is provided above the recess 18a. Fig. 12 is a perspective view showing a modified example of the positive terminal 12a. The positive terminal 12a is provided with recesses 12a3 and 12a4 that fit into the portions of the second protrusions 30a1 and 30a2 shown in Fig. 11 that are formed on the recess 18a of the second insulating member 30.

[0054] 13 is a diagram showing an example of arrangement of a positive terminal on a modified second insulating member. The positive terminal 12a is fitted into the recess 18a of the second insulating member 30. Furthermore, recesses 12a3 and 12a4 of the positive terminal 12a as shown in FIG. 12 are fitted into parts of the second protrusions 30a1 and 30a2. This prevents the positive terminal 12a from shifting position.

[0055] 14 is a diagram showing an example of the arrangement of the first insulating member on the second insulating member of a modified example. The first insulating member 14a is arranged on a portion of the upper surface of the positive terminal 12a, which is fitted into the recess 18a of the second insulating member 30. The first insulating member 14a is positioned by the first protrusions 18b1 and 18b2 of the second insulating member 30. Furthermore, the side surface of the first insulating member 14a facing the inside of the case 11 abuts against the second protrusions 30a1 and 30a2. This prevents the first insulating member 14a from shifting in position toward the inside of the case 11.

[0056] 15 is a perspective view showing a modified example of the negative terminal 13a. The negative terminal 13a is provided with recesses 13a4 and 13a5 that fit into the second protrusions 30a1 and 30a2 shown in FIG. 16 is a diagram showing an example of the arrangement of the negative terminal when a modified second insulating member is used. The negative terminal 13a is arranged on the front surface of the first insulating member 14a. When the second insulating member 30 is used, the recesses 13a4 and 13a5 of the negative terminal 13a as shown in FIG. 15 are fitted into the second protrusions 30a1 and 30a2. This prevents the negative terminal 13a from shifting out of position.

[0057] 17 is a diagram showing an example of the arrangement of the third insulating member when a modified second insulating member is used. Part of the side surface of the third insulating member 31 abuts against the second protrusions 30a1 and 30a2. This prevents the third insulating member 31 from shifting in position toward the inside of the case 11.

[0058] In the above example, the second insulating member 30 includes the second protrusions 30a1 and 30a2, but the third insulating member 31 may include second protrusions similar to the second protrusions 30a1 and 30a2. In this case, at least a part of the side surface of the second insulating member 30 abuts against the second protrusions provided on the third insulating member 31.

[0059] (Second embodiment) Fig. 18 is a perspective view showing an example of a semiconductor module according to the second embodiment. Fig. 19 is a perspective view showing an example of a terminal structure sandwiched between a second insulating member and a third insulating member. In Figs. 18 and 19, the same elements as those shown in Figs. 1 and 17 are designated by the same reference numerals.

[0060] In the semiconductor module 10 of the first embodiment described above, as shown in FIG. 4, the corner of the protrusion 14a1 of the first insulating member 14a located toward the outside of the case 11 is not sandwiched between the second insulating member 18 and the third insulating member 19, and extends outside the case 11. In contrast, in the semiconductor module 40 of the second embodiment, the ends 14a2, 14a3 of the protruding portion of the first insulating member 14a facing outward from the case 11 are covered by the second insulating member 50 and the third insulating member 51, and extend outward from the case 11. This makes it possible to further suppress deformation of the protruding portion 14a1 of the first insulating member 14a, and to prevent deterioration of the insulating performance.

[0061] In the example of Figure 19, the second insulating member 50 has second protrusions 30a1 and 30a2 as shown in Figure 11, but it does not have to have second protrusions 30a1 and 30a2 as in the second insulating member 18 shown in Figure 5.

[0062] While one aspect of the semiconductor module of the present invention has been described above based on the embodiment, this is merely an example and the present invention is not limited to the above description. For example, the positive terminals 12a, 12b, and 12c may be connected as negative terminals to the negative terminals of the second switching elements of the lower arms, and the negative terminals 13a, 13b, and 13c may be connected as positive terminals to the positive terminals of the first switching elements of the upper arms. In other words, although the above example has been described with the lower terminals of the terminal structures 15a, 15b, and 15c as positive terminals and the upper terminals as negative terminals, the positive and negative terminals may be reversed. The foregoing merely illustrates the principles of the present invention. Further, since numerous modifications and changes will be apparent to those skilled in the art, the present invention is not limited to the exact construction and application shown and described above, and all corresponding modifications and equivalents are deemed to be within the scope of the present invention as defined by the appended claims and their equivalents. [Explanation of symbols]

[0063] 10,40 Semiconductor Module 11 cases 11a First side 11b Second side 11c1~11c3 Storage area 12a,12b,12c Positive terminal 12a1,13a1 opening 12a2,13a2,13a3 part 12a3, 12a4, 13a4, 13a5 recesses 13a,13b,13c negative terminal 14a, 14b, 14c First insulating member 14a1 Protrusion 14a2,14a3 End 15a, 15b, 15c Terminal structure 16a, 16b, 16c control terminals 17a U terminal 17b V terminal 17c W terminal 21a1, 21b1, 21c1 First switching elements 21a2, 21b2, 21c2 Second switching elements 18, 30, 50 Second insulating member 18a Recess 18b1,18b2 1st protrusion 18c1~18c4 Post 19, 31, 51 Third insulating member 19a1,19a2 Fitting part 19b1,19b2 Protrusion 19c Recess 30a1,30a2 2nd protrusion

Claims

1. a terminal structure including: a positive terminal electrically connected to a positive electrode end of a first switching element of an upper arm; a negative terminal electrically connected to a negative electrode end of a second switching element of a lower arm; and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; a second insulating member and a third insulating member that sandwich the terminal structure from above and below so as to contact at least a portion of the front surface and the back surface of the protrusion and cover the front surface and the back surface; a case integrally molded with the terminal structure sandwiched between the second insulating member and the third insulating member; A semiconductor module having:

2. 2. The semiconductor module according to claim 1, wherein at least one of the second insulating member and the third insulating member has a recess in a surface facing the terminal structure, the recess being fitted with the positive terminal or the negative terminal.

3. 2. The semiconductor module according to claim 1, wherein one of the second insulating member and the third insulating member has a first protrusion on a surface facing the terminal structure, the first protrusion positioning the first insulating member.

4. The semiconductor module according to claim 3 , wherein the plurality of first protrusions are arranged opposite to a part of an outer edge of the first insulating member.

5. In one of the second insulating member and the third insulating member, a first side of a surface facing the terminal structure and a second side facing the first side each include one or more support posts; the other of the second insulating member and the third insulating member is provided with a fitting portion that fits with the one or more support posts. The semiconductor module according to claim 1 .

6. one of the second insulating member and the third insulating member has one or more second protrusions on a third side of a surface facing the terminal structure, the third side being positioned toward the inside of the case; At least a part of the other side surface of the second insulating member or the third insulating member abuts against the one or more second protrusions. The semiconductor module according to claim 1 .

7. 2. The semiconductor module according to claim 1, wherein a corner of the protrusion of the first insulating member located toward the outside of the case is not sandwiched between the second insulating member and the third insulating member and extends outside the case.

8. 2. The semiconductor module according to claim 1, wherein an end portion of the protrusion of the first insulating member facing outward from the case is covered by the second insulating member and the third insulating member and extends outward from the case.

9. 2. The semiconductor module according to claim 1, wherein the case, the second insulating member, and the third insulating member are made of a thermoplastic resin.

10. The semiconductor module according to claim 1 , wherein the first insulating member is insulating paper.

11. A terminal structure having a positive terminal electrically connected to the positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to the negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; a second insulating member and a third insulating member that sandwich the terminal structure from above and below and cover at least a portion of the front surface and the back surface of the protrusion; a case integrally molded with the terminal structure sandwiched between the second insulating member and the third insulating member, At least one of the second insulating member and the third insulating member has a recess on a surface facing the terminal structure, into which the positive terminal or the negative terminal is fitted. Semiconductor module.

12. A terminal structure having a positive terminal electrically connected to the positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to the negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; a second insulating member and a third insulating member that sandwich the terminal structure from above and below and cover at least a portion of the front surface and the back surface of the protrusion; a case integrally molded with the terminal structure sandwiched between the second insulating member and the third insulating member, a first protrusion for positioning the first insulating member on a surface of one of the second insulating member and the third insulating member facing the terminal structure; Semiconductor module.

13. A semiconductor module as described in Claim 12, wherein the plurality of first protrusion portions are arranged opposite a portion of the outer edge of the first insulating member.

14. A terminal structure having a positive terminal electrically connected to the positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to the negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; a second insulating member and a third insulating member that sandwich the terminal structure from above and below and cover at least a portion of the front surface and the back surface of the protrusion; a case integrally molded with the terminal structure sandwiched between the second insulating member and the third insulating member, In one of the second insulating member and the third insulating member, a first side of a surface facing the terminal structure and a second side facing the first side each include one or more support posts; the other of the second insulating member and the third insulating member is provided with a fitting portion that fits with the one or more support posts. Semiconductor module.

15. A terminal structure having a positive terminal electrically connected to the positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to the negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; a second insulating member and a third insulating member that sandwich the terminal structure from above and below and cover at least a portion of the front surface and the back surface of the protrusion; a case integrally molded with the terminal structure sandwiched between the second insulating member and the third insulating member, one of the second insulating member and the third insulating member has one or more second protrusions on a third side of a surface facing the terminal structure, the third side being positioned toward the inside of the case; At least a part of the other side surface of the second insulating member or the third insulating member abuts against the one or more second protrusions. Semiconductor module.

16. A terminal structure having a positive terminal electrically connected to the positive electrode end of a first switching element of an upper arm, a negative terminal electrically connected to the negative electrode end of a second switching element of a lower arm, and a first insulating member sandwiched between the positive terminal and the negative terminal and including a protruding portion, a portion of which protrudes from between the positive terminal and the negative terminal; a second insulating member and a third insulating member that sandwich the terminal structure from above and below and cover at least a portion of the front surface and the back surface of the protrusion; a case integrally molded with the terminal structure sandwiched between the second insulating member and the third insulating member, a corner of the protrusion of the first insulating member that is positioned toward the outside of the case is not sandwiched between the second insulating member and the third insulating member and extends to the outside of the case; Semiconductor module.

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