Atomic layer stacking device

Abstract

The present invention relates to an atomic layer deposition apparatus (2) including a substrate support (60) having a support surface (63), a precursor delivery head (30) having an output face (33) with at least one reaction zone (44, 44') to which a precursor is supplied, and a rotation mechanism (64, 66). The substrate support (60) and the precursor delivery head (30) are arranged to rotate relative to each other by the rotation mechanism (64, 66). The at least one reaction zone (44, 44') includes a precursor delivery zone (47) that opens onto the output face (33) of the precursor delivery head (30) for supplying the precursor, and a suction zone (46) that opens onto the output face (33) of the precursor delivery head (30) and is arranged to surround the precursor delivery zone (47) at the output face (33) of the precursor delivery head (30).

Description

[Technical Field]

[0001] FIELD OF THE INVENTION The present invention relates to an atomic layer deposition device for treating the surface of a substrate with at least a first precursor and a second precursor according to the principle of atomic layer deposition, in particular to an atomic layer deposition device according to the preamble of claim 1 . [Background technology]

[0002] Background of the Invention In the fabrication or coating of substrates, and particularly planar substrates such as semiconductor wafers, using atomic layer deposition, high throughput and the quality of the thin films formed are important. However, in prior art devices, high equipment throughput or processing speed and high coating quality are often mutually exclusive. This means that increasing the equipment throughput results in a decrease in coating quality. On the other hand, achieving high coating quality requires a decrease in equipment throughput.

[0003] Prior art atomic layer deposition systems include solutions in which a rotating substrate support is used. One or more substrates are supported on the substrate support surface. A precursor delivery head is positioned opposite the substrate support such that the output face of the precursor delivery head is positioned opposite and parallel to the substrate support surface. A reaction gap is provided between the support surface and the output face. A precursor material or materials are provided via the output face toward the support surface on which the one or more substrates are supported to expose the substrate surfaces to the precursors. The output face includes one or more reaction zones or precursor nozzles through which the precursors are delivered toward the support surface and the substrates. The substrate support rotates around a rotation axis perpendicular to the support surface. As the substrate support rotates, the one or more substrates move continuously and repeatedly under the one or more reaction zones or precursor nozzles to expose the substrate surfaces to the precursors.

[0004] In the above-described apparatus, throughput can be increased by increasing the rotational speed of the substrate support so that the substrate advances faster as it passes under the reaction zone or precursor nozzle of the precursor delivery head. However, in prior art apparatus, increasing the rotational speed reduces coating quality. This is because precursor gas flow (or stream) from the reaction zone or precursor nozzle tends to initiate concomitantly with the rotational motion of the substrate support, or the rotating substrate support drags the precursor along. Thus, precursor material escapes (or leaks or spills) from the reaction zone. This can further mix different precursors in the reaction chamber surrounding the substrate support. Gas-phase precursor reactions can occur instead of surface reactions on the substrate surface. Placing a very strong suction or discharge flow into the reaction chamber prevents gas-phase precursor reactions. However, this can disrupt even very small precursor flows. Summary of the Invention [Problem to be solved by the invention]

[0005] Detailed Description of the Invention It is an object of the present invention to provide an atomic layer deposition apparatus (or atomic layer growth apparatus or atomic layer evaporation apparatus) that overcomes or at least mitigates the disadvantages of the prior art. [Means for solving the problem]

[0006] The object of the invention is achieved by an atomic layer deposition apparatus, which is characterized in that it is claimed in independent claim 1.

[0007] Preferred embodiments of the invention are disclosed in the independent claims.

[0008] The present invention provides an atomic layer deposition apparatus for sequentially treating a surface of a substrate with at least a first precursor and a second precursor according to the principles of atomic layer deposition. The apparatus includes a substrate support having a support surface and arranged to support one or more substrates, and a precursor delivery head having an output face. The output face is provided by at least one reaction zone to which the precursor is delivered. The support surface of the substrate support and the output face of the precursor delivery head are arranged opposite each other such that a reaction gap is provided between the support surface of the substrate support and the output face of the precursor delivery head.

[0009] The support surface and the output surface are preferably arranged parallel to each other so that the reaction gap is uniform between the support surface and the output surface.

[0010] The apparatus further comprises a rotation mechanism, wherein the substrate support and the precursor delivery head are arranged to rotate relative to one another by the rotation mechanism such that a support surface of the substrate support and an output face of the precursor delivery head are arranged to rotate relative to one another.

[0011] Thus, a substrate disposed on the support surface is advanced past one or more reaction zones on the output face. Precursors are delivered from the reaction zones on the output face through a reaction gap to the substrate support and substrate, and the substrate surface is exposed to the precursors as it advances past the reaction zones. Thus, the substrate is continuously exposed to the precursors as the substrate support and precursor delivery head rotate relative to one another on the rotation mechanism.

[0012] According to the present invention, at least one reaction zone comprises a precursor supply zone (or precursor supply part) that is open to an output face of the precursor supply head for supplying a precursor, and a suction zone that is open to the output face of the precursor supply head and is arranged to surround the precursor supply zone at the output face of the precursor supply head.

[0013] The precursor delivery zone is thus arranged to form a precursor delivery area (or precursor supply region) through which precursor is delivered to the substrate support via a precursor delivery nozzle or reaction gap, and is arranged to be provided to and open at the output face of the precursor delivery head.

[0014] The suction zone is arranged to form a suction nozzle or suction slot or the like through which precursor and possibly other gases are emitted from the output face and from the reaction gap, and is arranged to be provided to and open at the output face of the precursor delivery head.

[0015] The suction zone is positioned at the output face to surround the precursor supply area. Therefore, excess precursor is removed and expelled from the output face and the reaction gap around the precursor supply zone. Thus, the precursor supply zone is isolated from the surroundings, or gas is prevented or inhibited from entering the precursor supply zone from the outside during relative rotation of the output face and the support surface. Therefore, when the substrate support and the precursor supply head rotate relative to each other, mixing of different precursors is prevented or reduced during the coating process.

[0016] Furthermore, the precursor supply flow can be isolated from the surroundings so that a uniform precursor flow is achieved outside the reaction zone of the output face independent of other gas flows, and thus high coating quality can be achieved at higher rotation speeds.

[0017] In one embodiment of the invention, a rotation mechanism is connected to the substrate support and arranged to rotate the substrate support such that the substrate, which may preferably be immobilized on the support surface, is transported through a stationary reaction zone provided with an output surface.

[0018] In another embodiment, a rotation mechanism is connected to the precursor delivery head and configured to rotate the precursor delivery head. Because gases can be delivered and released through the precursor delivery head, it is possible to consolidate all process equipment into one element within the apparatus. Furthermore, the rotation mechanism is served by the same precursor delivery head.

[0019] In a further embodiment, a rotation mechanism is connected to the substrate support and to the precursor delivery head and is arranged to rotate both the substrate support and the precursor delivery head relative to one another.

[0020] In one embodiment, the output face of the precursor delivery head and the support surface of the substrate support are arranged parallel to one another such that a uniform reaction gap is provided between the support surface of the substrate support and the output face of the precursor delivery head.

[0021] A uniform reaction gap allows for uniform gas distribution and delivery towards the support and substrate surfaces. Uniform gas distribution provides uniform and high coating quality.

[0022] In the context of this application, the output face of a precursor delivery head is provided as a planar or substantially planar surface. The output face comprises one or more reaction zones. In some embodiments, the output face comprises a first reaction zone for a first precursor and a second reaction zone for a second precursor.

[0023] Furthermore, the output surface and the support surface are arranged to face each other so that a uniform reaction gap is formed. The output surface is arranged to extend across the entire support surface so that the reaction gap is uniform across the entire support surface on which the substrate is supported. Thus, the output surface is arranged to cover the support surface. The output surface and the support surface are arranged to be parallel to each other.

[0024] Thus, the output face is disposed extending across the entire support surface such that the reaction gap is open to the environment at the ends of the reaction gap or at the periphery(s) or periphery of the reaction gap.

[0025] Thus, where the apparatus comprises a process chamber having a process chamber volume, the reaction gap is open to the chamber at its periphery(s).

[0026] In one embodiment, the rotation mechanism includes a rotation axis. The rotation axis is arranged perpendicular to the output surface, or the support surface, or the output surface and the support surface. Thus, the rotation axis and the rotation mechanism are arranged to rotate the support surface or the output surface in one plane. Preferably, the support surface and the output surface are parallel to each other, and the rotation axis is perpendicular to both the output surface and the support surface. Thus, the reaction gap can be constant and uniform during rotation and processing.

[0027] In one embodiment, the precursor supply zone of the reaction zone is formed as a precursor supply area and is located as a central area (or center or central region) of the reaction zone. Thus, the precursor is supplied from the central area of ​​the reaction zone and then passes through the reaction zone, allowing the substrate to be exposed to the precursor in a predetermined region. Furthermore, this allows the precursor supply zone to be efficiently isolated from the surroundings.

[0028] In one embodiment, the precursor supply zone is provided as a recess in the output face of the precursor delivery head. The recess is open to the output face of the precursor delivery head. The recess allows for even distribution of the precursor in the precursor supply zone so that uniform precursor supply toward the surface of the substrate can be achieved. The recess further provides a precursor supply area having dimensions along the output face to provide the necessary exposure to the reaction zone and the substrate passing through the precursor supply zone.

[0029] In one embodiment, the precursor supply zone of the reaction zone comprises two or more precursor supply openings opening to an output face of the precursor delivery head for distributing precursors over the precursor supply zone.

[0030] Two or more precursor supply ports allow for an even distribution of precursor over the precursor supply zone and towards the support and substrate surfaces.

[0031] In another embodiment, the precursor supply zone of the reaction zone comprises a reservoir and one or more precursor supply ports opening to the reservoir for distributing precursors over the precursor supply zone.

[0032] Precursors enter the reservoir through one or more precursor supply ports. The reservoir and a suction zone surrounding the reservoir cause even spreading in the reservoir and in the precursor supply zone to provide uniform precursor flow toward the substrate surface.

[0033] In a further embodiment, the precursor supply zone of the reaction zone comprises a precursor distribution element (or precursor distribution element) that serves the precursor supply zone and comprises one or more precursor distribution openings (or precursor distribution openings) that open to an output face of the precursor delivery head for distributing precursors in the precursor supply zone.

[0034] The precursor distribution element is positioned to distribute the precursor flow over a precursor supply zone or area to provide a uniform precursor flow toward the substrate surface. Preferably, the precursor distribution element comprises two or more, more preferably several, precursor distribution ports positioned over the precursor supply zone.

[0035] In yet another embodiment, a precursor delivery zone of the reaction zone comprises a precursor distribution element provided with a housing, the precursor distribution element comprising the housing and one or more precursor distribution ports opening into the housing for delivering precursor above the precursor delivery zone.

[0036] The precursor distribution element is arranged to distribute the precursor flow to the reservoir, from which the precursor can flow uniformly toward the support surface and the substrate. Preferably, the precursor distribution element comprises two or more, more preferably several, precursor distribution openings arranged above the reservoir. The precursor enters the reservoir through one or more distribution openings. The reservoir and a suction zone surrounding the reservoir cause the precursor to spread evenly in the reservoir and in the precursor supply zone to provide the precursor flow toward the support surface.

[0037] In one embodiment, the precursor delivery head has a head center point that is aligned with the rotation axis of the rotation mechanism, and the width of the precursor delivery zone, or precursor delivery area or reservoir, increases in a direction away from the head center point.

[0038] Thus, the width of the precursor supply zone, or precursor supply area or reservoir, increases in the radial direction away from the head center point, and the width of the precursor supply zone, or precursor supply area or reservoir, is perpendicular to the radial direction from the head center point.

[0039] Increasing the width away from the head center point allows for equal residence or transit times for the substrate at different distances from the axis of rotation and head center point, so that different portions of the substrate are evenly exposed to precursors and transit through the reaction zone during rotation.

[0040] In one embodiment, the suction zone is positioned circumferentially around the precursor delivery zone at the output face of the precursor delivery head.

[0041] Therefore, the suction portions are equally distributed around the precursor supply zone in all directions, thereby isolating the precursor supply zone from its surroundings in all directions. Furthermore, the suction provided by the suction zone induces the precursor to be distributed over the entire precursor supply zone.

[0042] In another embodiment, the suction zone is implemented as a suction slot arranged circumferentially around the precursor delivery zone at the output face of the precursor delivery head. The provision of a circumferential slot around the precursor delivery zone allows for efficient and uniform suction of the precursor.

[0043] In one embodiment, the reaction zone further comprises a purge gas supply zone that opens onto the output face of the precursor delivery head and is disposed to surround the suction zone and the precursor delivery zone at the output face of the precursor delivery head, the suction zone being disposed between the precursor delivery zone and the purge gas delivery zone at the output face of the precursor delivery head.

[0044] The purge gas zone further allows isolating the precursor supply zone from the surroundings and other precursors during processing. Thus, the purge gas zone provides a gas curtain and a barrier gas flow between the surroundings and the precursor supply zone. Furthermore, the suction zone is disposed between the precursor supply zone and the purge gas supply zone such that the purge gas from the purge gas zone and the precursor from the precursor supply zone flow through the suction zone, which prevents the precursor from escaping from the reaction zone and provides a uniform and stable precursor flow.

[0045] In one embodiment, the purge gas delivery zone is positioned circumferentially around the suction zone at the output face of the precursor delivery head.

[0046] Therefore, suction is provided from all directions around the precursor supply zone and from all directions around the purge gas supply zone, and a purge gas flow counter to the precursor flow is thus generated toward the suction zone, thereby enabling the precursor supply zone to be isolated from the surroundings in all directions.

[0047] In another embodiment, the purge gas delivery zone is provided as purge gas slots arranged circumferentially around the suction zone at the output face of the precursor delivery head.

[0048] Thus, the precursor delivery zone is isolated from the surroundings by the suction slots and from all sides by the purge gas delivery slots, which allows for a stable and smooth precursor flow toward the substrate support and substrate surface during processing and relative rotation of the precursor delivery head and substrate support.

[0049] In one embodiment, the precursor delivery head comprises two or more reaction zones at the output face of the precursor delivery head.

[0050] The reaction zones can be arranged to be fed with the same or different precursors. Increasing the number of reaction zones can increase the number of coating layers per rotation, thereby increasing the efficiency of the device. However, at the same time, increasing the number of reaction zones at the output surface increases the possibility of mixing of different precursor materials. Furthermore, the reaction zone structure of the present invention allows for the use of a greater number of reaction zones at the output surface without excessive mixing of different precursors.

[0051] In another embodiment, the precursor delivery head comprises a first reaction zone and a second reaction zone at an output face of the precursor delivery head.

[0052] The first reaction zone can be connected to a first precursor source and positioned to deliver the first precursor toward the substrate support during processing and rotation, and the second reaction zone can be connected to a second precursor source and positioned to deliver the second precursor toward the substrate support during processing and rotation.

[0053] Additionally, in some embodiments, there may be two or more first and second reaction zones at the output face, the first and second reaction zones being presented sequentially and alternately at the output face in the direction of rotation.

[0054] Thus, the surface of the substrate is alternately subjected to the first and second precursors during the rotational movement and treatment.

[0055] In a further embodiment, the precursor delivery head comprises a first reaction zone and a second reaction zone at an output face of the precursor delivery head, the first and second reaction zones being positioned opposite each other on opposite sides of the head center point.

[0056] Thus, the first and second reaction zones and also the first and second precursors are physically separated from one another and are rotationally spaced apart from one another at the output face.

[0057] Preferably, there are two or more reaction zones symmetrically arranged on the output face. They may be symmetrically arranged relative to each other. Furthermore, they may be symmetrically arranged relative to the head center point.

[0058] In one embodiment, the precursor delivery head includes an intermediate purge gas feeding nozzle positioned adjacent to the reaction zone on an opposite side of the output face from the reaction zone.

[0059] The intermediate purge gas supply nozzles are positioned to further prevent mixing of precursors between different reaction zones.

[0060] The intermediate purge gas supply nozzles are located adjacent to the reaction zone and on both sides of the output face opposite the reaction zone in the direction of rotation.

[0061] In another embodiment, the precursor delivery head includes an intermediate purge gas delivery nozzle positioned between adjacent reaction zones.

[0062] The intermediate purge gas supply nozzles are positioned rotationally between adjacent reaction zones at the output face, thereby further separating adjacent reaction zones and the precursors supplied from adjacent reaction zones.

[0063] In a further embodiment, the precursor delivery head comprises an intermediate purge gas delivery nozzle positioned between the first and second reaction zones.

[0064] The intermediate purge gas supply nozzle is disposed rotationally between the first and second reaction zones at the output face, thereby further separating the first and second reaction zones and the precursors supplied therefrom.

[0065] In one embodiment, the intermediate purge gas supply nozzle is positioned to extend in a direction between adjacent reaction zones.

[0066] Thus, the intermediate purge gas supply nozzles are positioned to extend in a direction from one reaction zone to another reaction zone.

[0067] Thus, the intermediate purge gas supply nozzles are arranged to extend substantially in the direction of rotation in some embodiments.

[0068] Furthermore, the intermediate purge gas supply nozzles are arranged in some embodiments to extend transversely or perpendicularly to the radial direction of the rotation axis.

[0069] In another embodiment, the intermediate purge gas supply nozzles are positioned to extend in a straight line between adjacent reaction zones.

[0070] In these embodiments, the purge gas flow may be directed in the radial direction of rotation, providing efficient flow away from the output face, the support surface, and away from the reaction gap.

[0071] In a further embodiment, the intermediate purge gas supply nozzle has a longitudinally curved shape and is positioned to extend between adjacent reaction zones.

[0072] In a preferred embodiment, the intermediate purge gas supply nozzle has a constant longitudinal curve radially from the axis of rotation, such that the curved intermediate purge gas supply nozzle extends rotationally between adjacent reaction zones.

[0073] In yet another embodiment, the intermediate purge gas supply nozzle is positioned to extend away from the head center point of the precursor delivery head.

[0074] In an alternative embodiment, the intermediate purge gas supply nozzles are positioned to extend radially away from the head center point of the precursor delivery head.

[0075] In these embodiments, the intermediate purge gas supply nozzle separates adjacent reaction zones from one another and further directs purge gas flow from the intermediate purge gas supply nozzle into the reaction zones providing induced separation of the different precursors.

[0076] In one embodiment, the substrate support comprises one or more substrate holders provided on the support surface for holding one or more substrates.

[0077] The substrate is supported on a support surface such that a surface of the substrate, preferably a flat substrate surface, is oriented away from the support surface and towards the opposing output surface.

[0078] Preferably, there are two or more substrate holders symmetrically provided on the substrate support and support surface for balanced rotation.

[0079] Additionally, the substrate is preferably supported so that a planar surface of the substrate is parallel to the output surface or to the output surface and the support surface.

[0080] In another embodiment, the substrate support comprises one or more substrate holder receptacles provided on the support surface for receiving one or more substrates, respectively.

[0081] The substrate is received in the receptacle.

[0082] In some embodiments, the housing is positioned to receive the substrate such that the top surface of the substrate facing the output surface is below or flush with the support surface, thereby allowing for uniform gas flow at the support surface and improving coating quality.

[0083] In one embodiment, the substrate support is positioned vertically below the precursor delivery head.

[0084] The precursor delivery head is therefore arranged vertically above the substrate support, in this embodiment the support surface and the output face are preferably arranged horizontally, and the rotation axis therefore extends vertically.

[0085] This provides a structure for efficiently transporting substrates into and out of the apparatus.

[0086] In one embodiment, the apparatus comprises a process chamber having a process chamber space inside the process chamber, and the substrate support and precursor delivery head are disposed inside the process chamber.

[0087] In one embodiment, the apparatus includes a process chamber having a process chamber volume inside the process chamber, and the support surface of the substrate support and the output face of the precursor delivery head are disposed inside the process chamber. Thus, the substrate support may be entirely inside the process chamber in the chamber volume, or only the support surface may be disposed inside the process chamber. In the latter case, the support surface may be disposed to form one or at least a portion of the chamber wall. Furthermore, the precursor delivery head may be entirely inside the process chamber in the chamber volume, or only the output face may be disposed inside the process chamber. In the latter case, the output face may be disposed to form one or at least a portion of the chamber wall.

[0088] In a preferred embodiment, the substrate support is provided inside the chamber volume of the process chamber, and the output face of the precursor delivery head is provided inside the chamber volume. Thus, the precursor delivery head is not completely inside the chamber volume. The output face can be located on one of the chamber walls, for example, the top wall or at least a portion thereof.

[0089] Thus, the processing of the substrate can be carried out in a process chamber that prevents contamination.

[0090] In one embodiment, the process chamber comprises a discharge connection provided to the process chamber and arranged to discharge gas from the process chamber space.

[0091] Vent connections are preferably provided in the wall or walls of the process chamber so that purge gas and excess precursor can be vented from the process chamber.

[0092] The reaction gap is open to the chamber space, as described above, and the discharge connection is therefore arranged to direct suction or low pressure from the peripheral or circumferential edge of the open reaction into the reaction gap to discharge excess gas from the reaction gap through the chamber space.

[0093] An advantage of the present invention is that the atomic layer apparatus of the present invention enables high-quality coatings at high production throughput. In the present invention, a suction zone surrounding the precursor supply zone in the reaction zone at the output face of the precursor delivery head allows for uniform and stable precursor flow toward the substrate surface even at higher rotational speeds. A purge gas supply zone further surrounding the suction zone allows for further increases in rotational speed without compromising coating quality. [Brief explanation of the drawings]

[0094] BRIEF DESCRIPTION OF THE DRAWINGS The present invention will now be described in more detail by means of specific embodiments with reference to the accompanying drawings. [Figure 1] FIG. 1 is a schematic diagram showing one embodiment of the device according to the present invention. [Figure 2] FIG. 2 is a schematic diagram showing another embodiment of the device according to the present invention. [Figure 3] FIG. 3 is a schematic diagram showing yet another embodiment of the device according to the present invention. [Figure 4] FIG. 4 is a schematic top view of a substrate support. [Figure 5] FIG. 5 is a schematic side view of the support of FIG. [Figure 6] FIG. 6 is a schematic top view of one embodiment of a precursor delivery head. [Figure 7] FIG. 7 is a schematic top view of another embodiment of a precursor delivery head. [Figure 8] FIG. 8 is a schematic diagram illustrating one embodiment of a reaction zone according to the present invention. [Figure 9]FIG. 9 is a schematic cross-sectional side view illustrating one embodiment of a reaction zone. [Figure 10] FIG. 10 is a schematic cross-sectional side view showing another embodiment of a reaction zone. [Figure 11] FIG. 11 is a schematic cross-sectional side view showing the first reaction zone. [Figure 12] FIG. 12 is a schematic cross-sectional side view showing the second reaction zone. DETAILED DESCRIPTION OF THE INVENTION

[0095] Detailed Description of the Invention 1 shows an atomic layer deposition apparatus 2 for sequentially treating a surface of a substrate with at least a first precursor and a second precursor according to the principle of atomic layer deposition. The apparatus comprises a process chamber 10 having a process chamber space 12 inside the process chamber 10. The process chamber 10 comprises a process chamber wall that defines the process chamber space 12.

[0096] The process chamber 10 serves as a vacuum chamber and is connected to a vacuum device (not shown), so the process chamber 10 serves as both a process chamber and a vacuum chamber.

[0097] In an alternative embodiment, there is another vacuum chamber (not shown) surrounding the process chamber 10. Thus, the process chamber is provided inside the vacuum chamber. The vacuum chamber is connected to a vacuum system (not shown) for providing a vacuum inside the vacuum chamber.

[0098] The substrate is processed inside the process chamber 10 .

[0099] Apparatus 2 further comprises a substrate support 60 having a support surface 63 and arranged to support one or more substrates on support surface 63. Substrate support 60 is arranged to support or hold one or more substrates during processing of the substrates by apparatus 2.

[0100] The substrate support 60 is provided inside the process chamber 10. Thus, the substrate support 60 is inside the process chamber space 12.

[0101] The support surface 63 is a flat surface extending in a plane.

[0102] The substrate is disposed on or connected to the support surface 63. Preferably, the substrate is a flat or plate-like substrate having two main substrate surfaces, such as a silicon wafer.

[0103] The substrate is typically supported on substrate support 60 so that the substrate surface or major substrate surface is parallel to support surface 63 .

[0104] The substrate support 60 comprises one or more substrate holders 62 arranged to secure and hold one or more substrates during processing. The substrate holders 62 are provided on or connected to a support surface 63.

[0105] The substrate is supported on the support surface 63 so that the upper surface facing away from the support surface 63 is flush with (or overlaps or is flush with) the support surface 63 or is at the same level (height) as the support surface 63.

[0106] In some alternative embodiments, the substrate is supported on support surface 63 such that the top surface facing away from support surface 63 is below support surface 63 .

[0107] Furthermore, in some embodiments, the substrate is supported on support surface 63 such that the top surface facing away from support surface 63 is above support surface 63. In these embodiments, the substrate may be supported directly on support surface 63.

[0108] The apparatus further includes a precursor delivery head 30 having an output face 33. The output face 33 is provided by at least one gas distribution element 40, 40' through which precursors are delivered. The one or more gas distribution elements 40, 40' provide one or more reaction zones 44, 44', respectively.

[0109] The precursor delivery head 30 is provided inside the process chamber 10. Thus, the precursor delivery head 30 is inside the process chamber space 12. Thus, the output face 33 of the precursor delivery head 30 is also inside the chamber space 12 of the process chamber 10.

[0110] Gas distribution elements 40, 40' and reaction zones 44, 44' are provided at or in connection with output face 33 so that precursors are supplied via output face 33.

[0111] Precursor delivery head 30 is connected to precursor delivery system 20. Precursor delivery system 20 includes a precursor source (not shown), such as a precursor container, and pumps and valves (not shown) for supplying precursor to precursor delivery head 30 via supply conduit 22.

[0112] Precursor delivery system 20 may also include a purge gas source (not shown), such as a purge gas container, and one or more pumps and valves (not shown) for supplying purge gas to precursor delivery head 30 via supply conduit 22.

[0113] The precursor delivery system 20 may also include a suction pump(s) for expelling gases from the output face 33 via the delivery conduit 22 .

[0114] The supply conduit 22 comprises one or more precursor conduits, one for each precursor, which are connected to precursor sources in the precursor supply system 20.

[0115] The supply conduit 22 further comprises one or more purge gas conduits, which connect to a purge gas source in the precursor delivery system 20.

[0116] The supply conduit 22 further comprises one or more suction conduits that connect to suction pump(s) in the precursor supply system 20 for releasing gases.

[0117] 1, precursor delivery system 20 is positioned outside process chamber 10. A supply conduit 22 extends between precursor delivery system 20 and precursor delivery head 30. Thus, supply conduit 22 extends from outside process chamber 10, through the chamber wall, into process chamber 10, and to precursor delivery head 30.

[0118] In embodiments including a separate vacuum chamber surrounding process chamber 10, precursor delivery system 20 is located outside the vacuum chamber. Thus, delivery conduit 22 extends from outside the vacuum chamber through the vacuum chamber wall into the vacuum chamber, and then through the chamber wall into process chamber 10 and to precursor delivery head 30.

[0119] The precursor delivery head 30 includes precursor supply channels 32, a purge section, and a suction section.

[0120] The feed passages 32 are connected to corresponding feed conduits 22. Additionally, the feed passages 32 of the precursor delivery head 30 are connected to one or more gas distribution elements 40, 40' or one or more reaction zones 44, 44' of the precursor delivery head 30, respectively.

[0121] Supply line 32 may include one or more precursor supply lines for supplying precursors. The precursor supply lines connect to one or more gas distribution elements 40, 40′ or one or more reaction zones 44, 44′, respectively. Each precursor may be provided by a separate precursor supply line. The precursor supply lines connect between one or more gas distribution elements 40, 40′ or one or more reaction zones 44, 44′, respectively, and a precursor supply conduit of supply conduit 20.

[0122] Supply line 32 may include one or more purge gas supply lines for supplying purge gas. The purge gas supply line(s) are connected to one or more gas distribution elements 40, 40′ or one or more reaction zones 44, 44′, respectively. The purge gas supply lines are connected between one or more gas distribution elements 40, 40′ or one or more reaction zones 44, 44′, respectively, and the purge gas supply conduit of supply conduit 20.

[0123] Supply line 32 may include one or more suction lines for discharging gas. The suction line(s) are connected to one or more gas distribution elements 40, 40′ or one or more reaction zones 44, 44′, respectively. The suction line(s) are connected between one or more gas distribution elements 40, 40′ or one or more reaction zones 44, 44′, respectively, and the suction conduit of supply conduit 20.

[0124] According to the above, gas exchange between the precursor delivery system 20 and one or more gas distribution elements 40 , 40 ′ or one or more reaction zones 44 , 44 ′ is carried out via the supply conduits 22 of the supply path 32 .

[0125] 1, support surface 63 of substrate support 60 and output face 33 of precursor delivery head 30 are positioned opposite one another. Support surface 63 and output face 33 are spaced apart from one another such that a reaction gap 65 is provided between support surface 63 and output face 33.

[0126] Precursors are supplied via output face 33 towards support surface 63 and a substrate placed on support surface 63 during processing. Furthermore, precursors are supplied from one or more gas distribution elements 40, 40′ or one or more reaction zones 44, 44′ through reaction gap 65 towards support surface 63. Thus, during processing, precursors, as well as possible purge gas, travel in reaction gap 65 towards or relative to support surface 63, with the substrate being fixedly supported by support surface 63.

[0127] The output face 33 of the precursor delivery head 30 and the support surface 63 of the substrate support 60 are arranged parallel to one another. The parallel output face 33 and support surface 63 together form a uniform reaction gap 65. A uniform reaction gap 65 means that the distance between the output face 33 and the support surface 63 is constant in the area between the output face 33 and the support surface 63.

[0128] 1, substrate support 60 is positioned vertically below precursor delivery head 30. Furthermore, support surface 63 is positioned vertically below output face 33. Thus, precursor and possible purge gas are delivered from precursor delivery head 30 downward through output face 33 toward support surface 63.

[0129] The output face 33 and the support surface 63 are both horizontally oriented and parallel to each other.

[0130] In an alternative embodiment, the substrate support 60 is positioned vertically above the precursor delivery head 30. Also in this embodiment, the output face 33 and the support surface 63 are both positioned horizontally and parallel.

[0131] The substrate support 60 and precursor delivery head 30 are positioned inside the process chamber 10 .

[0132] In the embodiment of FIG. 1, the substrate support 60 and the precursor delivery head 30 are both located inside the chamber volume 12 .

[0133] The apparatus 2 further comprises a discharge system 14 connected to the process chamber 10. The discharge system 14 is arranged to discharge gases forming a process chamber space 12 inside the process chamber 10.

[0134] The discharge system 14 is connected to the process chamber wall by a discharge conduit 16. The discharge system 14 comprises one or more discharge pumps arranged to discharge gas from the chamber space 12 of the process chamber 10. The discharge system 14 and the discharge conduit together form a discharge connection 16,14 serving the process chamber 10 and arranged to discharge gas from the process chamber space 12.

[0135] The emission device 14 is located outside the process chamber 10 .

[0136] In embodiments with a separate vacuum chamber surrounding the process chamber 10, the discharge system 14 is located outside the vacuum chamber. Thus, the discharge conduit 16 extends from outside the vacuum chamber, through the vacuum chamber wall, into the vacuum chamber, and to the chamber wall of the process chamber 10.

[0137] In accordance with the present invention, precursor delivery head 30 and substrate support 30 rotate relative to one another about axis of rotation 66 .

[0138] The rotation axis 66 extends perpendicular to the output face 33 and the support surface 63. The reaction gap 65 is therefore maintained constant during rotation.

[0139] During rotation, a substrate supported on a support surface moves in a rotational motion relative to one or more gas distribution elements 40, 40' or one or more reaction zones 44, 44', respectively, of precursor delivery head 30. Thus, the substrate is continuously exposed to precursors delivered through one or more gas distribution elements 40, 40' or one or more reaction zones 44, 44', respectively, of precursor delivery head 30 due to the relative rotational motion. During rotation, the substrate passes by one or more gas distribution elements 40, 40' or one or more reaction zones 44, 44', respectively, of precursor delivery head 30 and is then exposed to the precursors.

[0140] Apparatus 2 includes rotation mechanisms 64 and 66. Substrate support 60 and precursor delivery head 30 are arranged to rotate relative to one another by rotation mechanisms 64 and 66. Substrate support 60 and precursor delivery head 30 are arranged to rotate relative to one another by the rotation mechanisms such that support surface 63 of substrate support 60 and output face 33 of precursor delivery head 30 are arranged to rotate relative to one another.

[0141] 1, a rotation mechanism 64, 66 or rotation device 64 connects the substrate support 60 to the substrate support 60 for rotation. The rotation device 64 comprises a device such as a rotation motor arranged to output rotational motion.

[0142] The rotation device 64 is connected to the substrate support 60 by a rotation shaft 66 arranged to move in a rotational motion from the rotation device 60 to the substrate support 60. The rotation device 64 and rotation shaft 66 are arranged to rotate the substrate support 60 in a rotational direction A.

[0143] The axis of rotation 66 extends perpendicular to the support surface 63 .

[0144] The rotation axis 66 therefore extends vertically.

[0145] 1, the rotation device 64 is positioned outside the process chamber 10. The rotation axis 66 extends between the rotation device 64 and the substrate support 60. Thus, the rotation axis 66 extends from outside the process chamber 10, through the chamber wall, into the process chamber 10, and to the substrate support 60.

[0146] A rotation device 64 is positioned vertically below the substrate support 60 .

[0147] In embodiments comprising a separate vacuum chamber surrounding the process chamber 10, the rotation device 64 is located outside the vacuum chamber. Thus, the rotation axis 66 extends from outside the vacuum chamber, through the vacuum chamber wall, into the vacuum chamber, and through the chamber wall into the process chamber 10 and substrate support 60.

[0148] 2 shows another embodiment of an apparatus according to the present invention, in which a precursor delivery head 30 is arranged to form part of the process chamber wall of the process chamber 10.

[0149] Thus, the output face 33 of the precursor delivery head 30 is positioned to form a wall of the process chamber and to define the process chamber volume 12. However, the precursor delivery head 30 is not positioned inside the chamber volume 12. However, the substrate support 60 is positioned inside the chamber volume 12. The substrate support 30 is positioned to rotate in a rotation direction A inside the chamber volume 12 by a rotation device 64.

[0150] In the embodiment of FIG. 2, output face 33 of precursor delivery head 30 is positioned inside chamber space 12 of process chamber 10 .

[0151] Furthermore, in FIG. 2, output face 33 of precursor delivery head 30 is positioned to form one of the chamber walls, the top wall (or ceiling wall).

[0152] 3 shows a further embodiment in which a rotation mechanism 64, 66 or rotation device 64 is connected to precursor delivery head 30 having a rotation axis 66 for rotating precursor delivery head 30 in a rotation direction A. In this embodiment, substrate support 60 is provided stationary.

[0153] Rotation device 64 is disposed vertically above precursor delivery head 30. Rotation shaft 66 extends vertically.

[0154] It should be noted that the apparatus may include two rotation mechanisms 64, 66 for rotating the substrate support 60 and the precursor delivery head 30, respectively, separately and independently of each other.

[0155] Additionally, it should be noted that precursor delivery head 30 can also be positioned below substrate support 60 .

[0156] The substrate support 60 and / or the precursor delivery head 30 are preferably cylindrical elements, which favors smooth and well-balanced rotation.

[0157] Thus, at least one of substrate support 60 and / or rotating precursor delivery head 30 has a cylindrical shape.

[0158] The support surface 63 and / or the output face 33 have a cylindrical shape. Thus, at least one of the substrate support 60 and / or the rotating precursor delivery head 30 has a support surface 63 or output face 33, respectively, that has a cylindrical shape.

[0159] The support surface 63 and the output face 33 preferably have similar or identical shapes, for example circular shapes.

[0160] 4 shows a top view of one embodiment of substrate support 60. Substrate support 60 and support surface 63 have a support center point 67 or central support axis 67. Support center point 67 is the center point of circular support surface 63. A rotation axis 66 connects to substrate support 60 at or along support center point 67. Thus, substrate support 60 and support surface 63 rotate in a rotation direction A about rotation axis 66 and support center point 67 or support axis 67.

[0161] The substrate support 60 comprises two substrate holders 62 provided with a support surface 63 for holding two substrates, each substrate holder 62 being arranged to receive and hold one substrate.

[0162] The substrate holders 62 are arranged opposite each other on the opposite sides of the support center point 67 relative to the support surface 63 .

[0163] In alternative embodiments, there may be one or more substrate holders 62. Preferably, there are two or more substrate holders 62 arranged symmetrically about a support center point 67 relative to each other.

[0164] The substrate holders 62 are arranged consecutively or adjacently in the direction of rotation A.

[0165] Thus, the substrate holders 62 are at the same distance from the support center point 67 .

[0166] Figure 5 shows a side view of the substrate support 60 of Figure 4. The substrate holder 62 is formed as a substrate holder receptacle provided with a support surface 63 for receiving one or more substrates, respectively. The substrate holder receptacle 62 is arranged to receive the substrates such that the upper surface of the substrate faces the output face 33 of the precursor delivery head 30. Furthermore, the upper surface of the substrate is preferably parallel to the support surface 63 and the output face 33.

[0167] Thus, the bottom of the substrate holder housing 62 can be positioned parallel to the support surface 63 and the output face 33 .

[0168] 6 shows one embodiment of precursor delivery head 30 and its output face 33. Precursor delivery head 30 and output face 33 have a head center point 37 or head central axis 37. Head center point 37 is the center point of circular output face 33.

[0169] The head center point 37 is arranged to coincide with the rotation axis 66 of the rotation mechanisms 64 and 66 .

[0170] Alternatively or additionally, the head center point 37 is located coincident with or directly opposite the support center point or support center axis 67 .

[0171] The output face 33 is fed to two gas distribution elements 40, 40' to which the precursors are supplied. The two gas distribution elements 40, 40' feed two reaction zones 44, 44', respectively.

[0172] In one embodiment, the first gas distribution element 40 and the first reaction zone 44 are arranged to supply a first precursor, and similarly, the second gas distribution element 40' and the second reaction zone 44' are arranged to supply a second precursor.

[0173] The first and second gas distribution elements 40, 40' and the first and second reaction zones 44, 44', respectively, are provided symmetrically relative to one another at the output face 33. Furthermore, the first and second gas distribution elements 40, 40' and the first and second reaction zones 44, 44', respectively, are provided symmetrically relative to the head center point 37.

[0174] The first and second gas distribution elements 40, 40' are arranged on the output face 33 opposite the head center point 37 so as to face each other.

[0175] In alternative embodiments, there may be one or more gas distribution elements 40, 40'. Preferably, there may be two or more gas distribution elements 40, 40' arranged symmetrically relative to one another about the head center point 37.

[0176] The gas distribution elements 40, 40' are arranged consecutively or adjacently in the direction of rotation A.

[0177] Thus, the gas distribution elements 40 and 40 ′ are at the same distance from the head center point 37 .

[0178] Additionally, the gas distribution elements 40, 40' are positioned the same distance from the head center point 37, and the substrate holder 62 is positioned the same distance from the support center point 67. Thus, during rotational motion, the substrate holder 62 and the substrate therein pass through the gas distribution elements 40, 40' and their reaction zones 44, 44' to expose the substrate to the precursor.

[0179] Precursor delivery head 30 includes an intermediate purge gas supply nozzle 41 disposed at output face 33 adjacent gas distribution element 40, 40' or reaction zone 44, 44'.

[0180] Thus, the intermediate purge gas supply nozzles 41 are connected adjacent to the gas distribution elements 40, 40' or reaction zones 44, 44' on the opposite side of the gas distribution elements 40, 40' or reaction zones 44, 44', respectively, as shown in FIG.

[0181] Additionally, intermediate purge gas supply nozzles 41 are positioned between adjacent gas distribution elements 40, 40' or reaction zones 44, 44'.

[0182] In embodiments having first and second gas distribution elements 40, 40' or first and second reaction zones 44, 44', the intermediate purge gas supply nozzle 41 is positioned between the first and second gas distribution elements 40, 40' or first and second reaction zones 44, 44'.

[0183] The term adjacent in reference to the intermediate purge gas nozzle 41 means adjacent to the gas distribution element 40, 40' or reaction zone 44, 44' in the direction of rotation A, and thus adjacent to the output face 33 in the direction of rotation A about the head center point 37. This also applies to embodiments in which only the substrate support 60 rotates.

[0184] The term "between" in reference to the intermediate purge gas nozzle 41 means between two gas distribution elements 40, 40' or two reaction zones 44, 44' in the direction of rotation A. Thus, it means the output face 33 between adjacent gas distribution elements 40, 40' or adjacent reaction zones 44, 44' in the direction of rotation A about the head center point 37. This also applies to embodiments in which only the substrate support 60 rotates.

[0185] 6, the intermediate purge gas supply nozzle 41 has a longitudinally curved shape and is positioned to extend between adjacent reaction zones 44, 44'. Thus, the intermediate purge gas supply nozzle 41 extends in a direction between adjacent gas distribution elements 40, 40' or adjacent reaction zones 44, 44'.

[0186] Furthermore, the intermediate purge gas supply nozzle 41 is arranged to extend in the direction of rotation A around the head center point 37. This also applies to embodiments in which only the substrate support 60 rotates. Thus, the intermediate purge gas supply nozzle 41 has a longitudinal curved shape with a constant radius from the head center point, or forms a rotation axis 66 or support center point 67. Thus, the curved intermediate purge gas supply nozzle extends in the direction of rotation A between adjacent gas distribution elements 40, 40' or adjacent reaction zones 44, 44'.

[0187] Purge gas flow B is directed radially from the rotational direction A or from the head center point, as shown in FIG. 6 , thereby providing a lateral purge gas flow between adjacent gas distribution elements 40, 40′ and adjacent reaction zones 44, 44′. Purge gas is thus directed into and toward the reaction gap 65, and from the reaction gap 65 to the outside of the process chamber space 12 surrounding the precursor delivery head 30 and substrate support 60, and out of the reaction gap 65.

[0188] The curved intermediate purge gas supply nozzle 41 may be replaced by a longitudinally straight intermediate purge gas supply nozzle 41 extending in a direction between adjacent gas distribution elements 40, 40' or adjacent reaction zones 44, 44'. Alternatively, the intermediate purge gas supply nozzle 41 of FIG. 6 may be curved in an alternative manner between adjacent gas distribution elements 40, 40' or adjacent reaction zones 44, 44'.

[0189] FIG. 7 shows an alternative embodiment in which longitudinal intermediate purge gas supply nozzle 41 is positioned at output face 33 and extends away from head center point 37 of precursor delivery head 30 .

[0190] Additionally, longitudinal intermediate purge gas supply nozzles 41 extend radially away from head center point 37 of precursor delivery head 30. Longitudinal intermediate purge gas supply nozzles 41 are disposed in rotational direction A between adjacent gas distribution elements 40, 40' or adjacent reaction zones 44, 44'.

[0191] 7, the longitudinal intermediate purge gas supply nozzles 41 extend in a straight direction, although in alternative embodiments the longitudinal intermediate purge gas supply nozzles 41 may also be curved.

[0192] Additionally, the longitudinal intermediate purge gas supply nozzles 41 may be arranged to extend in directions away from the head center point 37 other than radially from the head center point 37 .

[0193] Purge gas flow C is directed in the rotational direction A or tangentially to the head center point 37 at longitudinal intermediate purge gas supply nozzles 41, as shown in Figure 7, thereby providing purge gas flow C toward or towards adjacent gas distribution elements 40, 40' or adjacent reaction zones 44, 44'.

[0194] The intermediate purge gas supply nozzles 41 may be arranged as longitudinal slots in the output face 33 .

[0195] Intermediate purge gas supply nozzle 41 is connected to the purge gas source of precursor delivery system 20 via purge gas supply conduit 22 and purge gas supply line 32 .

[0196] FIG. 8 illustrates a schematic of one embodiment of a gas distribution element 40 or reaction zone 44 .

[0197] Gas distribution element 40 or reaction zone 44 comprises a precursor delivery zone 47 that opens to output face 33 of precursor delivery head 30 for delivering precursor.

[0198] The precursor delivery zone 47 of the gas distribution element 40 is served by a precursor delivery nozzle 54 .

[0199] The precursor supply zone 47 is formed as a precursor supply area and is located as a central area of ​​the reaction zone 44 or gas distribution element 40 .

[0200] Additionally, precursor delivery nozzle 54 is positioned to provide a central nozzle for gas distribution element 40 .

[0201] Gas distribution element 40 or reaction zone 44 further comprises a suction zone 46 that opens onto output face 33 of precursor delivery head 30. Suction zone 46 is positioned at output face 33 of precursor delivery head 30 to surround precursor delivery zone 47.

[0202] The suction zone 46 of the gas distribution element 40 is served by suction nozzles 52. The suction nozzles 52 are arranged in the gas distribution element 40 and at the output face 33, surrounding the precursor delivery nozzles 54.

[0203] Thus, the suction zone 46 is arranged in the reaction zone 44 and at the output face 33 circumferentially surrounding the precursor supply zone 47 .

[0204] Similarly, suction nozzles 52 are arranged in the gas distribution element 40 and on the output face 33 circumferentially surrounding the precursor delivery nozzles 54 .

[0205] Suction zone 46 and suction nozzle 52 therefore surround precursor delivery zone 47 and precursor delivery nozzle 54, respectively, with output face 33 on all sides.

[0206] 8, precursor supplied from precursor supply zone 47 and precursor supply nozzle 54 flows from precursor supply zone 47 toward suction zone 46, as indicated by arrow D. Thus, precursor is prevented from escaping from reaction zone 44 and away from gas distribution element 40 into the environment.

[0207] In a preferred embodiment, gas distribution element 40 or reaction zone 44 further comprises a purge gas supply zone 45 that opens to output face 33 of precursor delivery head 30. Purge gas supply zone 45 is disposed to surround suction zone 46 and precursor delivery zone 47 at output face 33 of precursor delivery head 30. Suction zone 46 is thus provided between precursor delivery zone 47 and purge gas supply zone 45 at output face 33 of precursor delivery head 30.

[0208] The purge gas supply zone 45 of the gas distribution element 40 is served by purge gas supply nozzles 50. The purge gas supply nozzles 50 are arranged in the gas distribution element 40 and at the output face 33, surrounding the suction nozzles 52.

[0209] Thus, a purge gas supply zone 45 is arranged in the reaction zone 44 and at the output face 33 circumferentially surrounding the suction zone 46 .

[0210] Similarly, purge gas supply nozzles 50 are arranged in the gas distribution element 40 and on the output face 33 circumferentially surrounding the suction nozzles 52 .

[0211] Thus, purge gas supply zone 45 and purge gas supply nozzle 50 surround suction zone 466 and suction nozzle 52, respectively, from all sides at output face 33.

[0212] As shown in FIG. 8, the purge gas supplied from the purge gas supply zone 45 and the purge gas supply nozzle 50 flows from the purge gas supply zone 45 toward the suction zone 46 as indicated by arrow E.

[0213] The purge gas flow direction E is opposite to the precursor flow direction D. Thus, precursors are effectively prevented from escaping from the reaction zone 44 and away from the gas distribution element 40 to the environment.

[0214] According to the above, an aspiration zone 46 is provided at the output face 33 of the reaction zone 44, between the precursor supply zone 47 and the purge gas supply zone 45. Furthermore, an aspiration nozzle 52 is arranged at the output face 33 of the gas distribution element 40, between the precursor supply nozzle 54 and the purge gas supply nozzle 50.

[0215] 6, 7, and 8, the width of precursor delivery zone 47 increases in a direction away from or radial to head center point 37. Similarly, the width of precursor delivery nozzle 54 increases in a direction away from or radial to head center point 37.

[0216] Thus, the width W1 of the proximal end 71 of the precursor-supply zone 47 or precursor-supply nozzle 54 is less than the width W2 of the distal end 72 of the precursor-supply zone 47 or precursor-supply nozzle 54. The proximal end 71 of the precursor-supply zone 47 or precursor-supply nozzle 54 is the end closer to, and further from, the head center point 37 and the distal end 71 of the precursor-supply zone 47 or precursor-supply nozzle 54.

[0217] The width of the precursor delivery zone 47 or precursor delivery nozzle 54 is perpendicular to the radial direction from the head center point 37 .

[0218] 9 shows a schematic cross-sectional side view of gas distribution element 40. Gas distribution element 40 is supplied with precursor delivery nozzles 54 arranged to form precursor delivery zone 47 of reaction zone 44.

[0219] Precursor P is supplied from a precursor source to precursor delivery nozzle 54 via precursor delivery channel 57 and one or more precursor delivery ports 53. One or more precursor delivery ports 53 are provided between precursor delivery channel 57 and precursor delivery nozzle 54. Precursor P is further supplied towards support surface 63 or substrate, as shown by arrow F in FIG.

[0220] Precursor delivery nozzle 54 is positioned to define precursor delivery zone 47 as the precursor delivery area and as the central area of ​​reaction zone 44. Additionally, precursor delivery nozzle 54 is positioned to provide a central nozzle for gas distribution element 40.

[0221] Precursor delivery zone 47 or precursor delivery nozzle 54 is provided at output face 33 of precursor delivery head 30 as a housing 54. Housing 54 or precursor delivery nozzle 54 is open to output face 33 of precursor delivery head 30.

[0222] As shown in FIG. 9, there can be one or more, preferably two or three, precursor supply ports 53 opening into precursor supply zone 47 and precursor supply nozzle 54 or housing for distributing precursor P to precursor supply zone 47.

[0223] The precursor P and purge gas N are emitted through an intake passage 56, an intake nozzle 52, and an intake zone 46. The intake passage 56 connects to the intake nozzle 52 and to the intake zone 46. The precursor P and purge gas N are emitted from the output face 33, forming a reaction gap 65 indicated by arrow G in FIG.

[0224] Suction nozzles 52 are positioned to define suction zone 46 as suction slots arranged circumferentially around output face 33 of precursor delivery head 30 surrounding precursor delivery zone 47 and precursor delivery nozzle 54 .

[0225] Purge gas N is supplied from a purge gas source to purge gas supply nozzle 50 via purge gas supply passage 55. Purge gas N is further supplied toward support surface 63 or substrate as shown by arrow H in FIG.

[0226] Purge gas supply nozzles 50 are positioned to define purge gas supply zone 45 as purge gas slots arranged circumferentially around output face 33 of precursor delivery head 30 surrounding suction zone 46 and suction nozzles 52 .

[0227] 10 illustrates an embodiment in which a precursor distribution element 58 is provided to the precursor supply zone 47 and to the precursor delivery nozzle 54. The precursor distribution element 58 is connected to the precursor supply channel 57 for receiving precursor P from a precursor source. The precursor distribution element 58 comprises one or more precursor distribution ports 59 opening onto the precursor delivery nozzle 54 and the precursor delivery zone 47. Preferably, the precursor distribution element 58 comprises two or more precursor distribution ports 59 opening onto the precursor delivery nozzle 54 and the precursor delivery zone 47 for distributing the precursor over a region of the precursor delivery zone 47. Thus, the precursor distribution element 58 covers the precursor delivery zone 47 for distributing the precursor over a region of the precursor delivery zone 47.

[0228] 11 and 12 show a first gas distribution element 40 and a second gas distribution element 40', respectively. The first and second gas distribution elements 40, 40' in FIGS. 11 and 12 correspond to the first and second gas distribution elements 40, 40' in FIGS.

[0229] A first precursor source 82 comprising a first precursor is connected via a first precursor supply passage 57 to the first precursor supply region 47 or to a first purge gas supply nozzle of the first gas distribution element 40. A first suction device 81 is connected via a first suction passage 56 to the first suction zone 46 or to a first suction nozzle of the first gas distribution element 40. A first purge gas source 80 is connected via a first purge gas supply passage 55 to the first purge gas supply region 45 or to the first purge gas supply nozzle of the first gas distribution element 40.

[0230] A first precursor source 82 , a first suction device 81 and a first purge gas source 80 are provided in the precursor delivery system 20 of the apparatus 2 .

[0231] The first precursor supply line 57, the first suction line 56, and the first purge gas supply line 55 are shown or provided in the conduits 22 and lines 32 of FIGS.

[0232] A second precursor source 82' comprising a second precursor is connected to the second precursor supply region 47' or the second purge gas supply nozzle of the second gas distribution element 40' via a second precursor supply passage 57'. A second suction device 81' is connected to the second suction zone 46' or the second suction nozzle of the second gas distribution element 40' via a second suction passage 56'. A second purge gas source 80' is connected to the second purge gas supply region 45' or the second purge gas supply nozzle of the second gas distribution element 40' via a second purge gas supply passage 55'.

[0233] A second precursor source 82 ′, a second suction device 81 ′ and a second purge gas source 80 ′ are provided in the precursor delivery system 20 of the apparatus 2 .

[0234] The second precursor supply passage 57', the second suction passage 56', and the second purge gas supply passage 55' are shown or provided in the conduits 22 and channels 32 of FIGS.

[0235] Furthermore, the first and second suction devices 81, 81' may serve as one common suction device.

[0236] Additionally, the first and second purge gas sources 80, 80' may serve as a common purge gas source.

[0237] The same purge gas source may also be connected to the intermediate purge gas supply nozzle 41 .

[0238] The present invention has been described above with reference to the embodiments shown in the drawings, but the present invention is not limited to the above embodiments and can be modified in various ways within the scope of the claims.

Claims

1. An atomic layer deposition apparatus (2) for sequentially treating a surface of a substrate with at least a first precursor and a second precursor according to the principles of atomic layer deposition, said apparatus (2) comprising: a substrate support (60) having a support surface (63) and arranged to support one or more substrates; a precursor delivery head (30) having an output face (33); a support surface (63) of the substrate support (60) and an output surface (33) of the precursor delivery head (30) arranged opposite each other such that a reaction gap (65) is provided between the support surface (63) of the substrate support (60) and the output surface (33) of the precursor delivery head (30); A rotation mechanism (64, 66) Equipped with said output face (33) being provided by at least one reaction zone (44, 44') to which precursors are supplied; the substrate support (60) and the precursor delivery head (30) are arranged to rotate relative to each other by the rotation mechanisms (64, 66) such that the support surface (63) of the substrate support (60) and the output face (33) of the precursor delivery head (30) are arranged to rotate relative to each other; the output surface (33) of the precursor supply head (30) comprises two or more reaction zones (44, 44'), each of which comprises a precursor supply zone (47) that is open to the output surface (33) of the precursor supply head (30) for supplying a precursor, and a suction zone (46) that is open to the output surface (33) of the precursor supply head (30) and is arranged to surround the precursor supply zone (47) at the output surface (33) of the precursor supply head (30); the reaction zone (44, 44') further comprises a purge gas supply zone (45) that is open to the output face (33) of the precursor supply head (30) and that is arranged to surround the suction zone (46) and the precursor supply zone (47) at the output face (33) of the precursor supply head (30), the suction zone (46) being arranged between the precursor supply zone (47) and the purge gas supply zone (45) at the output face (33) of the precursor supply head (30); The apparatus comprises a process chamber (10) having a process chamber space (12) inside the process chamber (10), the substrate support (60) and the precursor delivery head (30) are disposed inside the process chamber (10), The process chamber (10) is characterized in that it comprises discharge connections (16, 14) provided to the process chamber (10) and arranged to discharge gas from the process chamber space (12), the precursor delivery head (30) comprises an intermediate purge gas delivery nozzle (41) positioned adjacent to and opposite the two or more reaction zones (40, 44'); or the precursor delivery head (30) comprises an intermediate purge gas delivery nozzle (41) located between adjacent reaction zones (40, 44'); or Apparatus, characterized in that said precursor delivery head (30) comprises an intermediate purge gas delivery nozzle (41) located between said first and said second reaction zones (40, 44').

2. the rotation mechanism (64, 66) is connected to the substrate support (60) and is arranged to rotate the substrate support (60); or 2. The apparatus (2) of claim 1, wherein the rotation mechanism (64, 66) is connected to the precursor delivery head (30) and is arranged to rotate the precursor delivery head (30).

3. 3. The apparatus (2) according to claim 1 or 2, characterized in that the output face (33) of the precursor supply head (30) and the support surface (63) of the substrate support (60) are arranged parallel to each other so that a uniform reaction gap (65) is provided between the support surface (63) of the substrate support (60) and the output face (33) of the precursor supply head (30).

4. The device (2) according to any one of claims 1 to 3, characterized in that the rotation mechanism (64, 66) has a rotation axis (64), and the rotation axis (64) is arranged perpendicular to the output surface (33), or the support surface (63), or the output surface (33) and the support surface (63).

5. 5. The apparatus (2) according to claim 1, wherein the precursor supply zone (47) of the two or more reaction zones (44, 44') is formed as a precursor supply area and is arranged as a central area of ​​the two or more reaction zones (44, 44').

6. 6. The apparatus (2) according to claim 1, wherein the precursor supply zone (47) is provided at the output face (33) of the precursor supply head (30) as a storage section (54), the storage section being open at the output face (33) of the precursor supply head (30), the storage section comprising a space having substantially the same width as the precursor supply zone (47) in cross section, the space temporarily storing the precursor.

7. The precursor supply zone (47) of the two or more reaction zones (44, 44') comprises: two or more precursor supply ports (53) opening onto the output face (33) of the precursor delivery head (30) for distributing precursor onto the precursor delivery zone (47); or one or more precursor supply ports (53) opening into said container (54) for distributing precursor into said container (54) and onto said precursor supply zone (47); or a precursor distribution element (58) serving the precursor supply zone (47) and comprising one or more precursor distribution ports (59) opening onto the output face (33) of the precursor delivery head (30) for distributing precursor onto the precursor supply zone (47); or a precursor distribution element (58) provided in said storage section (54), said precursor distribution element (58) comprising one or more precursor distribution ports (59) open to said storage section (54) for distributing precursor into said storage section (54) and onto said precursor supply zone (47); A device (2) according to any one of claims 1 to 6, characterized in that it comprises:

8. 8. The apparatus (2) according to claim 4, wherein the precursor supply head (30) has a head center point (37) that is aligned with the rotation axis (66) of the rotation mechanism (64, 66), and wherein the width of the precursor supply zone (47) increases in a direction away from the head center point (37).

9. the suction zone (46) is arranged around the output face (33) of the precursor delivery head (30) to surround the precursor delivery zone (47); or 9. The apparatus (2) according to any one of claims 1 to 8, characterized in that the suction zone (46) is provided as suction slots (46) arranged around the periphery of the output face (33) of the precursor delivery head (30) and surrounding the precursor delivery zone (47).

10. the purge gas supply zone (45) is arranged around the output face (33) of the precursor delivery head (30) to surround the suction zone (46); or 2. The apparatus (2) of claim 1, wherein the purge gas supply zone (45) is provided as purge gas slots (45) arranged around the periphery of the output face (33) of the precursor delivery head (30) surrounding the suction zone (46).

11. the precursor delivery head (30) comprises a first reaction zone (44) and a second reaction zone (44') at the output face (33) of the precursor delivery head (30); 11. The apparatus (2) according to any one of claims 1 to 10, characterized in that the precursor supply head (30) comprises a first reaction zone (44) and a second reaction zone (44') on the output face (33) of the precursor supply head (30), the first and second reaction zones (44, 44') being arranged opposite each other on opposite sides of the head center point (37).

12. the intermediate purge gas supply nozzle (41) is arranged to extend in a direction between the adjacent reaction zones (40, 44'); or the intermediate purge gas supply nozzle (41) is arranged to extend in a linear direction between the adjacent reaction zones (40, 44'); or the intermediate purge gas supply nozzle (41) has a longitudinally curved shape and is positioned to extend between the adjacent reaction zones (40, 44'); or the intermediate purge gas supply nozzle (41) is positioned to extend away from the head center point (37) of the precursor delivery head (30); or 2. The apparatus (2) of claim 1, wherein the intermediate purge gas supply nozzles (41) are arranged to extend radially away from the head center point (37) of the precursor delivery head (30).

13. the substrate support (60) comprises one or more substrate holders (62) provided on the support surface (63) for holding one or more substrates, or 13. Apparatus (2) according to any one of claims 1 to 12, characterized in that the substrate support (60) comprises one or more substrate holder receptacles (62) provided on the support surface (63) for receiving one or more substrates, respectively.

14. Apparatus (2) according to any one of the preceding claims, characterized in that the substrate support (60) is arranged vertically below the precursor delivery head (30).

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